A two-fluid wafer cleaning apparatus

CN122999419APending Publication Date: 2026-10-30SUZHOU XINZHEN SEMICONDUCTOR TECHNOLOGY CO LTD
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Patent Information

Application Number
CN202611174274.1
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-08-04
Publication Date
2026-10-30

AI Technical Summary

Technical Problem

[0004]本发明的目的在于提供一种二流体清洗晶圆的装置,旨在改善现有技术中参数固定的喷嘴结构的问题

Benefits of technology

[0027]1、通过导热轴与导热鳍片盘将晶圆热量传导至隔热套筒内的石蜡块,配合双头活塞、连通管与空心密封圈结构带动旁通孔开度自动变化,结合旋流进液流道、主雾化流道与前置破膜气幕流道的同轴分层布设以及同步,通过高温工况下气液比自动升高,强化污染物剥离能力,以及常温工况下气液比平缓回落,避免损伤晶圆表面,实现了清洗力度随晶圆温度进行自适应匹配,提升了清洗均匀性与工况适配性。

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Abstract

The application relates to a two-fluid wafer cleaning device, which comprises a rack, a mechanical arm fixedly connected to the top of the rack, a spray head rotationally arranged at the output end of the mechanical arm, the spray head comprising an outer pipe and a liquid delivery pipe, an air inlet arranged at the top of the outer pipe, a middle partition plate arranged between the liquid delivery pipe and the outer pipe, a middle pipe fixedly connected to the bottom of the middle partition plate, a gas-liquid ratio self-adjusting valve core arranged in the liquid delivery pipe, a self-recovery part arranged at the bottom outside of the outer pipe, and a gas-liquid flow channel arranged between the liquid delivery pipe, the middle pipe, the outer pipe and the self-recovery part. The gas-liquid ratio is automatically increased under high-temperature conditions, the pollutant stripping capacity is strengthened, the gas-liquid ratio is gently lowered under normal-temperature conditions, the wafer surface is prevented from being damaged, the cleaning strength is adaptively matched with the wafer temperature, and the cleaning uniformity and the working condition adaptability are improved.
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Description

Technical Field

[0001] This invention relates to the field of semiconductor device manufacturing technology, specifically to a two-fluid cleaning device for wafers. Background Technology

[0002] In semiconductor wafer fabrication, after high-temperature heat treatment, deposition, etching, and other processes, particulate contaminants and process residues adhere to the wafer surface. These require a two-fluid cleaning process to ensure surface cleanliness and guarantee the yield and device performance of subsequent processes. Two-fluid cleaning, with its gentle impact characteristics of atomized droplets, is one of the core processes in wafer wet cleaning, demanding precise control of cleaning intensity and adaptability to various operating conditions.

[0003] Existing two-fluid cleaning devices mostly employ nozzle structures with fixed parameters, relying on pre-set air supply pressure and liquid supply flow rate to output atomized jets to complete the cleaning operation. However, the cleaning gas-liquid ratio of nozzle structures with fixed parameters cannot be dynamically and adaptively adjusted according to the wafer surface temperature. When dealing with high-temperature wafers, the cleaning and peeling ability is insufficient, making it difficult to efficiently remove stubborn contaminants adhering to high temperatures. For wafers at room temperature, the impact force is too high, causing damage to the surface microstructure. It is impossible to simultaneously achieve both cleaning cleanliness and wafer surface integrity under different temperature conditions. Summary of the Invention

[0004] The purpose of this invention is to provide a two-fluid cleaning device for wafers, which aims to improve the problem of nozzle structures with fixed parameters in the prior art.

[0005] The objective of this invention is achieved through the following technical solution: a two-fluid cleaning wafer device, comprising a frame, a robotic arm fixedly connected to the top of the frame, and a nozzle rotatably mounted on the output end of the robotic arm;

[0006] The nozzle includes an outer tube and an infusion tube. An air inlet is provided at the top of the outer tube. A middle partition is provided between the infusion tube and the outer tube. A middle tube is fixedly connected to the bottom of the middle partition. A gas-liquid ratio self-adjusting valve core is provided inside the infusion tube. A self-recovery component is provided on the bottom outer side of the outer tube. A gas-liquid flow channel is provided between the infusion tube, the middle tube, the outer tube and the self-recovery component.

[0007] The gas-liquid ratio self-regulating valve core includes a heat-conducting fin disk fixedly connected to the center of the partition plate. A heat-conducting shaft is fixedly connected to the bottom of the heat-conducting fin disk, and a heat-insulating sleeve is fixedly connected to the top of the heat-conducting fin disk. A double-ended piston is slidably connected inside the heat-insulating sleeve, and a paraffin block is placed inside the lower cavity of the heat-insulating sleeve. The top of the paraffin block abuts against the bottom of the double-ended piston. A pressure relief hole is provided outside the lower cavity of the heat-insulating sleeve, and the pressure relief hole is obliquely downward. Multiple connecting pipes are arranged circumferentially in the upper cavity of the heat-insulating sleeve.

[0008] As a further description of the above technical solution:

[0009] The gas-liquid ratio self-regulating valve core also includes an annular limiting strip fixedly connected to the inner wall of the outer tube. The annular limiting strip has a hollow sealing ring inside and the hollow sealing ring is connected to the other end of the connecting pipe. The outer tube has multiple bypass holes on its exterior and the internal opening of the bypass holes abuts against the outer side of the hollow sealing ring.

[0010] As a further description of the above technical solution:

[0011] The partition plate is configured as a multi-layer ring structure, and the multi-layer ring plates of the partition plate are connected by a cuboid connecting frame.

[0012] As a further description of the above technical solution:

[0013] The bottom of the frame is equipped with a recycling tank, the top of the frame is equipped with a fixing mechanism, the top of the frame is equipped with a liquid storage tank, and the outside of the frame is equipped with a controller and an air pump. The controller is electrically connected to the water pump, robotic arm and air pump inside the liquid storage tank through wires.

[0014] As a further description of the above technical solution:

[0015] The infusion tube includes an inner tube, the top of which is connected to the output end of the storage tank, and a spiral baffle is provided on the inner side of the bottom of the inner tube to make the cleaning liquid rotate and spray out.

[0016] As a further description of the above technical solution:

[0017] The self-recycling component includes a fixed ring rotatably disposed on the outside of the outer tube, a ring-shaped recycling cover threadedly connected to the bottom of the fixed ring, a waste collection trough provided inside the ring-shaped recycling cover, and a one-way bend provided between the ring-shaped recycling cover and the middle tube.

[0018] As a further description of the above technical solution:

[0019] The gas-liquid flow channel includes a swirling liquid inlet channel, a main atomizing channel, a pre-film breaking air curtain channel, and a recovery channel. The swirling liquid inlet channel is set in the central cavity of the inner tube. The main atomizing channel is set between the inner wall of the middle tube and the outer wall of the inner tube. The pre-film breaking air curtain channel is set between the outer wall of the middle tube and the inner wall of the outer tube. The recovery channel is set inside the annular recovery hood. A Venturi negative pressure channel is set in the middle of the pre-film breaking air curtain channel, and the two ends of the one-way bend are respectively connected to the throat of the recovery channel and the Venturi negative pressure channel.

[0020] As a further description of the above technical solution:

[0021] The main atomizing channel is an annular cavity surrounding the inner swirling liquid inlet channel. The front end of the cavity converges towards the nozzle axis, and an annular atomizing slit is formed at the front end of the cavity. The high-pressure airflow ejected from the annular atomizing slit obliquely shears the inner swirling liquid film to complete atomization.

[0022] The pre-fractured membrane air curtain channel is an annular cavity that wraps around the middle layer atomizing gas path. The front end of the cavity expands outward away from the nozzle axis, and an annular air curtain slit is formed at the front end of the cavity. The end face of the annular air curtain slit protrudes forward axially compared to the end face of the middle layer annular atomizing slit. The annular air curtain slit sprays out a cone-shaped airflow curtain that diffuses outward, completely wrapping the inner layer atomizing jet.

[0023] The recovery channel outlet is an annular slit with the opening facing the workpiece and inclined outward with the nozzle axis. The recovery channel outlet is coaxially sleeved around the annular air curtain slit of the outer film breaking air curtain channel. The negative pressure generated by the Venturi negative pressure channel at the recovery channel outlet adsorbs and peels off carbon particles and splash droplets through the annular slit-type recovery channel outlet.

[0024] As a further description of the above technical solution:

[0025] The fixing mechanism includes a motor installed at the bottom of the frame and a motor output plate fixed to the motor output end. A negative pressure box is fixedly connected to the top of the motor output plate. A pressure groove is opened on the outer circumference of the negative pressure box. A rotating sealing ring is rotatably connected to the outer side of the negative pressure box. A negative pressure extraction pipe is fixedly connected to the outside of the rotating sealing ring and is connected to the air pump. A negative pressure adsorption plate is installed on the top of the negative pressure box, and a wafer is adsorbed on the top of the negative pressure adsorption plate through negative pressure.

[0026] Compared with the prior art, the advantages of the present invention are as follows:

[0027] 1. The heat from the wafer is transferred to the paraffin block inside the heat insulation sleeve through the heat-conducting shaft and heat-conducting fin disk. The structure of double-headed piston, connecting pipe and hollow sealing ring drives the automatic change of the bypass hole opening. Combined with the coaxial layered layout and synchronization of the swirling liquid inlet channel, the main atomizing channel and the pre-film breaking air curtain channel, the gas-liquid ratio automatically increases under high temperature conditions to enhance the ability to remove contaminants, and the gas-liquid ratio gradually decreases under normal temperature conditions to avoid damage to the wafer surface. This achieves adaptive matching of cleaning intensity with wafer temperature, improving cleaning uniformity and adaptability to operating conditions.

[0028] 2. Through the coaxial layered arrangement and staggered end face design of the swirling liquid inlet channel, the main atomizing channel, and the pre-film-breaking air curtain channel, combined with the synergistic effect of spiral baffles driving the liquid flow to form a rotating liquid film, annular atomizing slit shearing atomization, and the pre-action of the pre-air curtain, the beneficial effect of efficient and uniform cleaning of the wafer surface is achieved. The pre-air curtain acts first to break down the surface air resistance barrier, and the atomized jet carries rotational shearing force to peel off contaminants layer by layer. The swirling shape ensures uniform force on all parts of the wafer plane, which not only improves the efficiency of contaminant removal and cleaning cleanliness, but also avoids direct water flow impact damage to the wafer surface, adapting to wafer cleaning conditions with different cleanliness requirements. Attached Figure Description

[0029] Figure 1 This is a schematic diagram of the main body of an embodiment of a two-fluid cleaning wafer device proposed in this invention;

[0030] Figure 2 This is a schematic diagram of the fixing mechanism of a two-fluid wafer cleaning device proposed in this invention;

[0031] Figure 3 This is a schematic diagram of the nozzle structure of a two-fluid wafer cleaning device proposed in this invention. Figure 1 ;

[0032] Figure 4 This is a schematic diagram of the nozzle structure of a two-fluid wafer cleaning device proposed in this invention. Figure 2 ;

[0033] Figure 5 This is a schematic diagram of the gas-liquid ratio self-regulating valve core of a two-fluid wafer cleaning device proposed in this invention;

[0034] Figure 6 This is a schematic diagram of the infusion tube structure of a two-fluid wafer cleaning device proposed in this invention;

[0035] Figure 7 This is a schematic diagram of the self-recovery component of a two-fluid wafer cleaning device proposed in this invention;

[0036] Figure 8 for Figure 6 Enlarged view of point A in the middle;

[0037] Figure 9 for Figure 7 Enlarged view of point B in the middle.

[0038] Labeling Explanation: 1. Frame; 2. Recovery Tank; 3. Fixing Mechanism; 301. Motor Output Panel; 302. Negative Pressure Box; 303. Pressure Channel; 304. Rotating Sealing Ring; 305. Negative Pressure Extraction Pipe; 306. Negative Pressure Adsorption Plate; 4. Wafer; 5. Controller; 6. Liquid Storage Tank; 7. Gas Pump; 8. Robotic Arm; 9. Nozzle; 91. Liquid Delivery Pipe; 911. Inner Pipe; 912. Spiral Baffle; 92. Outer Pipe; 93. Air Inlet; 94. Middle Baffle; 95. Middle Pipe; 96. Gas-Liquid Ratio Self-Adjusting Valve Core; 96 1. Heat-conducting fin disc; 962. Heat-conducting shaft; 963. Heat-insulating sleeve; 964. Paraffin block; 965. Double-ended piston; 966. Connecting pipe; 967. Annular limiting strip; 968. Hollow sealing ring; 969. Bypass hole; 97. Self-recovery component; 971. Fixing ring; 972. Annular recovery cover; 973. Waste collection tank; 974. One-way bend; 98. Gas-liquid flow channel; 981. Swirl inlet flow channel; 982. Main atomizing flow channel; 983. Pre-film breaking air curtain flow channel; 984. Recovery flow channel. Detailed Implementation

[0039] The present invention will now be described in detail with reference to the accompanying drawings and embodiments:

[0040] like Figures 1 to 9 The diagram shows an embodiment of a two-fluid wafer cleaning device provided by the present invention. The device includes a frame 1, which serves as the supporting base for the device, providing installation support and positioning references for various functional components. A robotic arm 8 is fixedly connected to the top of the frame 1. The robotic arm 8 drives a nozzle 9 to move along a preset trajectory, achieving full-surface cleaning of the wafer 4. A nozzle 9 is rotatably mounted at the output end of the robotic arm 8. The nozzle 9 serves as the cleaning execution terminal, outputting an atomized jet and integrating gas-liquid ratio adjustment and contaminant recovery functions. A recovery tank 2 is located at the bottom of the frame 1, collecting waste liquid and large particles detached during the cleaning process, achieving centralized collection of waste liquid and contaminants. A fixing mechanism 3 is located at the inner top of the frame 1, achieving negative pressure adsorption and fixation of the wafer 4 and rotational drive, ensuring the stability of the workpiece during the cleaning process. A liquid storage tank 6 is located at the top of the frame 1, storing the cleaning medium and continuously supplying cleaning fluid to the cleaning system. A controller 5 and an air pump 7 are also installed on the outside of the frame 1. The controller 5 coordinates and regulates the operation of the water pump, air pump 7, and robotic arm 8, and manages the overall cleaning process. The air pump 7 outputs a high-pressure air source to provide power support for the air circuit system of the nozzle 9 and the negative pressure adsorption system. The controller 5 is electrically connected to the water pump, robotic arm 8, and air pump 7 inside the liquid storage tank 6 via wires.

[0041] The fixing mechanism 3 includes a motor mounted at the bottom of the frame 1 and a motor output disk 301 fixed to the motor output end. The motor outputs rotational power to drive the wafer 4 support structure to rotate at a constant speed. The motor output disk 301 transmits the motor's rotational torque, causing the upper negative pressure support structure to rotate synchronously. A negative pressure box 302 is fixedly connected to the top of the motor output disk 301, forming a sealed negative pressure cavity to provide negative pressure space for wafer 4 adsorption. A pressure channel 303 is provided on the circumferential outer side of the negative pressure box 302, connecting the inside of the negative pressure box 302 with the external negative pressure pipeline, realizing the transmission of air pressure inside and outside the cavity. A rotating sealing ring 304 is rotatably connected to the outside of the negative pressure box 302. The rotating sealing ring 304 maintains dynamic sealing of the pipeline when the negative pressure box 302 is rotating, preventing negative pressure leakage. A negative pressure extraction pipe 305 is fixedly connected to the outside of the rotating sealing ring 304, and the negative pressure extraction pipe 305 is connected to the air pump 7. The negative pressure extraction pipe 305 is connected to the air pump 7 to extract gas from the cavity, thus constructing a power path for negative pressure adsorption. A negative pressure adsorption plate 306 is provided on the top of the negative pressure box 302, and the wafer 4 is adsorbed on the top of the negative pressure adsorption plate 306 through negative pressure. The negative pressure adsorption plate 306 transmits negative pressure adsorption force through surface through holes, stably supporting and fixing the wafer 4. The wafer 4 serves as the processing workpiece for the cleaning operation, bearing surface contaminants and completing the cleaning process.

[0042] The nozzle 9 includes an outer tube 92 and a liquid delivery tube 91. The outer tube 92 forms the outer shell of the nozzle 9, housing the internal flow channels and valve core assembly. The liquid delivery tube 91 forms the central liquid path channel, delivering cleaning fluid to the nozzle outlet. An air inlet 93 is located at the top of the outer tube 92, connecting to an external high-pressure gas source to supply high-pressure gas to the nozzle 9's air path system. A partition 94 is installed between the liquid delivery tube 91 and the outer tube 92, separating the upper air chamber from the lower flow channel space and regulating the airflow direction. The partition 94 is a multi-layered annular structure, with the multiple annular layers connected by a cuboid connecting frame. A middle tube 95 is fixedly connected to the bottom of the partition 94, separating the middle and outer air paths and simultaneously forming the outer wall of the main atomizing flow channel 982 and the inner wall of the pre-film-breaking air curtain flow channel 983. The infusion tube 91 is internally equipped with a gas-liquid ratio self-regulating valve core 96. This valve core 96 senses temperature changes and automatically adjusts the gas leakage rate, achieving thermal adaptive regulation of the gas-liquid ratio. A self-recovery component 97 is located on the bottom outer side of the outer tube 92, forming an external recovery structure to collect shed contaminants and splashed droplets. A gas-liquid flow channel 98 is provided between the infusion tube 91, the middle tube 95, the outer tube 92, and the self-recovery component 97. This channel regulates the flow path of the gas and liquid fluids, achieving a stratified spraying function.

[0043] The infusion tube 91 includes an inner tube 911, which forms the main channel of the central fluid path and guides the cleaning fluid to flow axially. The top of the inner tube 911 is connected to the output end of the storage tank 6. A spiral baffle 912 is provided on the inner bottom of the inner tube 911 to cause the cleaning fluid to be sprayed out in a rotating manner. The spiral baffle 912 forces the fluid flow to generate a circumferential rotation component, so that the sprayed fluid flow forms a hollow conical rotating liquid film.

[0044] The gas-liquid ratio self-regulating valve core 96 includes a heat-conducting fin disk 961 fixedly connected to the center of the partition plate 94. The heat-conducting fin disk 961 increases the heat exchange area, quickly collecting and conducting ambient heat. A heat-conducting shaft 962 is fixedly connected to the bottom of the heat-conducting fin disk 961, transferring heat from the front end of the nozzle 9 and conducting heat from the wafer 4 side to the paraffin working area. A heat-insulating sleeve 963 is fixedly connected to the top of the heat-conducting fin disk 961, isolating external excess heat interference and providing a sealed working cavity for the paraffin and piston. A double-ended piston 965 is slidably connected inside the heat-insulating sleeve 963. The double-ended piston 965 slides along the cavity driven by the expansion of the paraffin, compressing the upper cavity to change the gas pressure. A paraffin block 964 is placed inside the lower cavity of the heat-insulating sleeve 963. The paraffin block 964 changes volume with temperature using the thermal expansion and contraction characteristics, outputting power to drive the piston displacement. The top of the paraffin block 964 abuts against the bottom of the double-ended piston 965. A pressure relief hole is provided on the exterior of the lower cavity of the heat insulation sleeve 963, and the hole is angled downwards. The pressure relief hole balances the air pressure in the lower cavity, ensuring smooth operation of the paraffin's expansion and contraction process. Multiple connecting pipes 966 are circumferentially arranged in the upper cavity of the heat insulation sleeve 963. The connecting pipes 966 conduct pressure changes in the upper cavity, supplying high-pressure gas to the hollow sealing ring 968.

[0045] The gas-liquid ratio self-regulating valve core 96 also includes an annular limiting strip 967 fixedly connected to the inner wall of the outer tube 92. The annular limiting strip 967 defines the installation position and expansion direction of the hollow sealing ring 968, ensuring precise sealing action. The annular limiting strip 967 contains a hollow sealing ring 968, which is connected to the other end of the connecting pipe 966. The hollow sealing ring 968 expands and deforms under air pressure, adjusting the venting opening by conforming to the bypass hole 969. Multiple bypass holes 969 are provided on the outside of the outer tube 92, with the internal opening of each bypass hole 969 abutting against the outer side of the hollow sealing ring 968. The bypass holes 969 serve as venting passages for the main air chamber, adjusting the working air pressure within the chamber by changing their opening degree.

[0046] The self-recovery component 97 includes a fixing ring 971 rotatably mounted on the outside of the outer tube 92. The fixing ring 971 connects and positions the self-recovery component 97 to the outer tube 92, ensuring the coaxiality of each flow channel. A ring-shaped recovery cover 972 is threadedly connected to the bottom of the fixing ring 971. The ring-shaped recovery cover 972 forms the outer recovery cavity, enclosing the cleaning area to collect contaminants. A contaminant collection tank 973 is provided inside the ring-shaped recovery cover 972, temporarily storing collected contaminants and droplets, achieving centralized collection of contaminants. A one-way bend 974 is provided between the ring-shaped recovery cover 972 and the middle tube 95. The one-way bend 974 connects the negative pressure area and the recovery cavity, achieving unidirectional flow and preventing backflow of contaminants.

[0047] The gas-liquid flow channel 98 includes a swirling liquid inlet channel 981, a main atomizing channel 982, a pre-breaking film air curtain channel 983, and a recovery channel 984. The swirling liquid inlet channel 981 delivers a rotating liquid film, providing a continuous liquid source for subsequent atomization. The swirling liquid inlet channel 981 is located in the central cavity of the inner tube 911. The main atomizing channel 982 delivers and accelerates high-pressure gas, providing shearing power for liquid film atomization. The main atomizing channel 982 is located between the inner wall of the middle tube 95 and the outer wall of the inner tube 911. The pre-breaking film air curtain channel 983 outputs an outer air curtain, which acts on the workpiece surface beforehand and blocks the inner layer of atomized jet. The pre-breaking film air curtain channel 983 is located between the outer wall of the middle tube 95 and the inner wall of the outer tube 92. The recovery channel 984 forms a passage for waste recovery, guiding waste into the collection structure. The recovery channel 984 is located inside the annular recovery hood 972. A Venturi negative pressure channel is provided in the middle of the pre-film breaking air curtain channel 983. The Venturi negative pressure channel uses the change of the channel cross-section to increase the flow velocity and generate negative pressure, providing suction power for the recovery system. The two ends of the one-way bend 974 are respectively connected to the throat of the recovery channel 984 and the Venturi negative pressure channel.

[0048] The main atomizing channel 982 is an annular cavity surrounding the inner swirling liquid inlet channel 981. The front end of the cavity converges towards the nozzle axis, forming an annular atomizing slit at the very front end of the cavity. The annular atomizing slit outputs a high-speed converging airflow, which shears the liquid film to complete droplet atomization. The high-pressure airflow ejected from the annular atomizing slit obliquely shears the inner swirling liquid film to complete atomization.

[0049] The pre-film-breaking air curtain channel 983 is an annular cavity that encloses the middle-layer atomizing gas path. The front end of the cavity expands outward away from the nozzle axis, forming an annular air curtain slit at the very front of the cavity. The annular air curtain slit outputs a diffused air curtain, realizing the functions of pre-film breaking and outer perimeter containment. The end face of the annular air curtain slit protrudes axially forward compared to the end face of the middle-layer annular atomizing slit, and the annular air curtain slit ejects a cone-shaped airflow curtain that diffuses outward, completely enveloping the inner-layer atomizing jet.

[0050] The outlet of the recovery channel 984 is an annular slit with its opening facing the workpiece and inclined outward with respect to the nozzle axis. The outlet of the recovery channel 984 is coaxially fitted around the annular air curtain slit of the outer film breaking air curtain channel. The negative pressure generated by the Venturi negative pressure channel at the outlet of the recovery channel 984 adsorbs and peels off carbon particles and splash droplets through the annular slit-type recovery channel 984 outlet.

[0051] Working principle: The wafer 4 to be cleaned is placed on the top surface of the negative pressure adsorption plate 306. The air pump 7 draws air out through the negative pressure extraction pipe 305. The airflow enters the negative pressure box 302 through the rotating sealing ring 304 and the pressure groove 303 on the side wall of the negative pressure box 302, creating a negative pressure environment inside the negative pressure box 302. The through holes on the surface of the negative pressure adsorption plate 306 generate adsorption force simultaneously, which stably fixes the wafer 4 on the surface of the negative pressure adsorption plate 306. The motor at the bottom of the frame 1 is started, which drives the motor output plate 301 to rotate around the axis. The motor output plate 301 simultaneously drives the negative pressure box 302, the negative pressure adsorption plate 306 and the wafer 4 to rotate at a uniform speed. The rotating sealing ring 304 remains relatively stationary, maintaining the sealing state of the negative pressure pipeline.

[0052] The entire cleaning system is started. The controller 5 sends a control signal, and the water pump and air pump 7 inside the liquid storage tank 6 start synchronously. The cleaning liquid is output from the liquid storage tank 6 and enters the liquid delivery pipe 91 inside the nozzle 9 along the pipeline. It flows downward along the central cavity of the inner tube 911. High-pressure clean gas enters the interior of the outer tube 92 from the air inlet 93 at the top of the outer tube 92 and fills the upper air cavity space above the partition plate 94. The multi-layer ring structure of the partition plate 94 separates the upper air cavity from the lower flow channel space. The high-pressure gas can only be delivered downward through the preset flow channel.

[0053] At room temperature, the gas-liquid ratio self-regulating valve core 96 maintains a low-pressure working state. The paraffin block 964 in the lower cavity of the heat insulation sleeve 963 is in a room-temperature contracted state. The double-headed piston 965 is stationary at the lower position of the heat insulation sleeve 963. The gas pressure in the upper cavity of the heat insulation sleeve 963 is balanced with the outside. The connecting pipe 966, which is connected to the upper cavity, conducts the gas to the hollow sealing ring 968. The hollow sealing ring 968 is in a contracted state and is contained inside the annular limiting strip 967. The bypass hole 969 on the side wall of the outer tube 92 remains fully open. The high-pressure gas entering the upper gas cavity is divided into two paths. One path enters the lower gas flow channels of each layer, and the other path leaks out through the bypass hole 969, so that the gas cavity maintains a low working pressure.

[0054] The swirling liquid inlet channel 981 outputs a rotating liquid film. The cleaning fluid inside the inner tube 911 continues to flow downwards. When it flows through the spiral baffle 912 on the inner side of the bottom of the inner tube 911, the liquid flow is forcibly guided by the inclined surface of the spiral baffle 912 and obtains a circumferential rotational motion component. When the liquid flow is ejected from the bottom outlet of the inner tube 911, it diffuses outwards under the action of centrifugal force, forming a hollow cone-shaped rotating liquid film, which is ejected forward along the axial direction of the swirling liquid inlet channel 981.

[0055] The main atomizing channel 982 completes liquid film atomization. The high-pressure gas in the upper gas chamber enters the annular cavity of the main atomizing channel 982 downwards. The cavity gradually converges towards the center along the axial direction, and the airflow velocity continues to increase. Finally, it is ejected at high speed from the annular atomizing slit at the front end. The ejected high-pressure airflow impacts the outer surface of the rotating liquid film output from the inner swirling liquid inlet channel 981 at an inclined angle, shearing and tearing the continuous liquid film into micron-sized droplets. The gas and liquid mix to form an atomized jet with rotational kinetic energy, which continues to move towards the surface of wafer 4.

[0056] The pre-fracture gas curtain channel 983 outputs an outer gas curtain, and another high-pressure gas enters the annular cavity of the pre-fracture gas curtain channel 983. The cavity gradually expands outward along the axial direction. After the airflow is ejected from the annular gas curtain slit at the front end, it forms an outwardly diffused conical airflow curtain, which completely surrounds the inner layer of atomized jet. Since the end face of the annular gas curtain slit protrudes forward along the axial direction compared to the end face of the annular atomization slit, the movement path of the airflow curtain is shorter. It arrives at the surface of wafer 4 before the atomized droplets, pre-acting on the surface of wafer 4, and at the same time forming a barrier structure around the atomized jet.

[0057] When the high-pressure gas in the pre-film breaking air curtain channel 983 flows through the Venturi negative pressure channel in the middle of the channel, the narrowing of the channel cross-section causes the airflow velocity to increase sharply, forming a negative pressure area at the throat. One end of the one-way bend 974 is connected to the throat of the Venturi negative pressure channel, and the other end is connected to the waste collection tank 973 inside the annular recovery hood 972. Under the action of negative pressure, an inward suction force is formed inside the recovery channel 984. The annular slit at the front end of the recovery channel 984 faces the surface of wafer 4, and the waste is carried upward with the airflow. After extraction, the unidirectional blocking property of the one-way bend 974 prevents it from entering the Venturi channel, causing the particles peeled off from the surface of wafer 4 and the splashed droplets to fall into the waste collection tank 973, achieving synchronous recycling during the cleaning process; the fixing ring 971 positions the annular recycling cover 972 on the lower outer side of the outer tube 92, maintaining the coaxial state of the recycling channel 984 and each inner layer channel, and allowing the annular recycling cover 972 to be disassembled, thereby cleaning the waste in the waste collection tank 973.

[0058] The robotic arm 8 drives the nozzle 9 to reciprocate and swing above the wafer 4 according to the preset motion trajectory. Combined with the uniform rotation of the wafer 4 itself, the atomized jet sequentially covers the entire surface area of ​​the wafer 4, completing the layer-by-layer peeling and cleaning of contaminants on the surface of the wafer 4. During the cleaning process, the dripping waste liquid and large particles fall down into the recycling tank 2 at the bottom of the frame 1 for centralized collection.

[0059] When cleaning the high-temperature wafer 4, the heat emitted by the wafer 4 is transferred to the front end structure of the nozzle 9. The heat is conducted through the heat-conducting shaft 962 to the heat-conducting fin disk 961, and then to the paraffin block 964 at the bottom of the heat insulation sleeve 963. The paraffin block 964 expands in volume after being heated, pushing the double-ended piston 965 upwards along the inner wall of the heat insulation sleeve 963, compressing the gas in the upper cavity of the heat insulation sleeve 963, thus increasing the gas pressure in the upper cavity. The high-pressure gas enters the hollow sealing ring 968 through the connecting pipe 966, causing the hollow sealing ring 968 to expand. The outer side of the hollow sealing ring 968 gradually adheres to and seals the inner opening of the bypass hole 969, and the leakage rate of the bypass hole 969 increases accordingly. As the temperature rises, the pressure gradually decreases; the air pressure inside the upper air chamber increases synchronously as the air leakage decreases, and the gas flow rate delivered downward to the main atomizing channel 982 and the pre-film breaking air curtain channel 983 increases synchronously, the gas-liquid ratio automatically increases, and the impact force of the atomized jet increases synchronously; as the temperature of wafer 4 gradually decreases during the cleaning process, the paraffin block 964 gradually cools and shrinks, the double-headed piston 965 resets downward under the action of air pressure, the gas in the hollow sealing ring 968 flows back to the upper cavity of the heat insulation sleeve 963, the hollow sealing ring 968 gradually shrinks, the opening of the bypass hole 969 gradually increases, the air leakage increases, the air pressure inside the air chamber drops, the gas-liquid ratio automatically decreases, and the cleaning intensity gradually becomes gentler.

[0060] After all cleaning processes are completed, the controller 5 sends out shutdown signals in sequence. The water pump in the liquid storage tank 6 stops first, and the liquid supply to the liquid circuit stops. Then the air pump 7 stops running, the air supply to the air circuit stops, the fluid output of each channel gradually stops, and the negative pressure of the self-recovery system disappears synchronously. The motor of the fixing mechanism 3 stops rotating, the wafer 4 stops rotating, the negative pressure extraction tube 305 stops pumping air, the negative pressure adsorption force is released, and the cleaned wafer 4 can be removed from the negative pressure adsorption plate 306, completing the entire cleaning process.

Claims

1. A two-fluid cleaning wafer apparatus, comprising a frame (1), characterized in that: The top of the frame (1) is fixedly connected to a mechanical arm (8), and the output end of the mechanical arm (8) is rotatably equipped with a nozzle (9). The nozzle (9) includes an outer tube (92) and an infusion tube (91). An air inlet (93) is provided at the top of the outer tube (92). A middle partition (94) is provided between the infusion tube (91) and the outer tube (92). A middle tube (95) is fixedly connected to the bottom of the middle partition (94). A gas-liquid ratio self-adjusting valve core (96) is provided inside the infusion tube (91). A self-recovery component (97) is provided on the outer side of the bottom of the outer tube (92). A gas-liquid flow channel (98) is provided between the infusion tube (91), the middle tube (95), the outer tube (92) and the self-recovery component (97). The gas-liquid ratio self-regulating valve core (96) includes a heat-conducting fin disk (961) fixedly connected to the center of the middle partition (94), a heat-conducting shaft (962) fixedly connected to the bottom of the heat-conducting fin disk (961), a heat-insulating sleeve (963) fixedly connected to the top of the heat-conducting fin disk (961), a double-headed piston (965) slidably connected inside the heat-insulating sleeve (963), and a paraffin block (964) is provided inside the lower cavity of the heat-insulating sleeve (963). The top of the paraffin block (964) abuts against the bottom of the double-headed piston (965). A pressure relief hole is provided outside the lower cavity of the heat-insulating sleeve (963) and the pressure relief hole is set at an angle downward. Multiple connecting pipes (966) are arranged circumferentially in the upper cavity of the heat-insulating sleeve (963).

2. The apparatus for cleaning wafers using two fluids according to claim 1, characterized in that: The gas-liquid ratio self-regulating valve core (96) also includes an annular limiting strip (967) fixedly connected to the inner wall of the outer tube (92). The annular limiting strip (967) is provided with a hollow sealing ring (968) and the hollow sealing ring (968) is connected to the other end of the connecting pipe (966). The outer tube (92) is provided with multiple bypass holes (969) and the inner opening of the bypass hole (969) abuts against the outer side of the hollow sealing ring (968).

3. The apparatus for cleaning wafers using two fluids according to claim 1, characterized in that: The partition plate (94) is configured as a multi-layer ring structure, and the multi-layer ring plates of the partition plate (94) are connected by a cuboid connecting frame.

4. The apparatus for cleaning wafers using two fluids according to claim 1, characterized in that: The bottom of the frame (1) is provided with a recycling tank (2), the top of the frame (1) is provided with a fixing mechanism (3), the top of the frame (1) is provided with a liquid storage tank (6), and the outside of the frame (1) is also provided with a controller (5) and an air pump (7). The controller (5) is electrically connected to the water pump, the robotic arm (8) and the air pump (7) inside the liquid storage tank (6) via wires.

5. The apparatus for cleaning wafers using two fluids according to claim 1, characterized in that: The infusion tube (91) includes an inner tube (911), the top of which is connected to the output end of the storage tank (6), and a spiral baffle (912) is provided on the inner side of the bottom of the inner tube (911) to make the cleaning liquid rotate and spray out.

6. The apparatus for cleaning wafers using two fluids according to claim 5, characterized in that: The self-recycling component (97) includes a fixed ring (971) rotatably disposed on the outside of the outer tube (92), and a ring-shaped recycling cover (972) is threadedly connected to the bottom of the fixed ring (971). A waste collection trough (973) is provided inside the ring-shaped recycling cover (972), and a one-way bend (974) is provided between the ring-shaped recycling cover (972) and the middle tube (95).

7. The apparatus for cleaning wafers using two fluids according to claim 6, characterized in that: The gas-liquid flow channel (98) includes a swirling liquid inlet channel (981), a main atomizing channel (982), a pre-film breaking air curtain channel (983), and a recovery channel (984). The swirling liquid inlet channel (981) is set in the central cavity of the inner tube (911). The main atomizing channel (982) is set between the inner wall of the middle tube (95) and the outer wall of the inner tube (911). The pre-film breaking air curtain channel (983) is set between the outer wall of the middle tube (95) and the inner wall of the outer tube (92). The recovery channel (984) is set inside the annular recovery hood (972). A Venturi negative pressure channel is set in the middle of the pre-film breaking air curtain channel (983), and the two ends of the one-way bend (974) are respectively connected to the throat of the recovery channel (984) and the Venturi negative pressure channel.

8. The apparatus for cleaning wafers using two fluids according to claim 7, characterized in that: The main atomizing channel (982) is an annular cavity surrounding the inner swirling liquid inlet channel (981). The front end of the cavity converges towards the nozzle axis, and an annular atomizing slit is formed at the front end of the cavity. The high-pressure airflow ejected from the annular atomizing slit obliquely shears the inner swirling liquid film to complete atomization. The pre-film breaking air curtain channel (983) is an annular cavity that wraps the middle layer atomizing air path. The front end of the cavity expands outward away from the nozzle axis, and an annular air curtain slit is formed at the front end of the cavity. The end face of the annular air curtain slit protrudes forward axially compared to the end face of the middle layer annular atomizing slit. The annular air curtain slit sprays out a cone-shaped airflow curtain that diffuses outward, completely wrapping the inner layer atomizing jet. The outlet of the recovery channel (984) is an annular slit with the opening facing the workpiece and inclined outward with the nozzle axis. The outlet of the recovery channel (984) is coaxially sleeved around the annular air curtain slit of the outer film breaking air curtain channel. The negative pressure generated by the Venturi negative pressure channel at the outlet of the recovery channel (984) adsorbs and peels off carbon particles and splash droplets through the annular slit-type recovery channel (984).

9. The apparatus for cleaning wafers using two fluids according to claim 4, characterized in that: The fixing mechanism (3) includes a motor installed at the bottom of the frame (1) and a motor output plate (301) fixed at the output end of the motor. A negative pressure box (302) is fixedly connected to the top of the motor output plate (301). A pressure groove (303) is opened on the outer side of the negative pressure box (302). A rotating sealing ring (304) is rotatably connected to the outer side of the negative pressure box (302). A negative pressure extraction pipe (305) is fixedly connected to the outside of the rotating sealing ring (304) and the negative pressure extraction pipe (305) is connected to the air pump (7). A negative pressure adsorption plate (306) is installed on the top of the negative pressure box (302) and a wafer (4) is adsorbed on the top of the negative pressure adsorption plate (306) by negative pressure.