Diamond article and method of making the same

Abstract

The application relates to a diamond product and a preparation method thereof. The preparation method of the diamond product comprises the following steps: performing mechanical finishing treatment on single crystal diamond; the contact track of the mechanical finishing treatment is located in a {100} crystal face of the single crystal diamond, the angle between the direction of the contact track and a <110> crystal direction in the {100} crystal face is less than or equal to 2 degrees, and the single-point contact load of the mechanical finishing treatment is 10 mN to 50 mN. By confining the contact track of the mechanical finishing treatment in the {100} crystal face of the single crystal diamond, controlling the angle between the direction of the contact track and the <110> crystal direction in the {100} crystal face in a small range, and simultaneously controlling the single-point contact load of the mechanical finishing treatment, a dislocation slip dominant plastic deformation mechanism is actively induced, strain energy for crack initiation is consumed, a cleavage crack initiation path is effectively blocked, and dislocation dominant plastic accommodation is promoted, so that the subsurface damage of the diamond product is effectively reduced.

Description

Technical Field

[0001] This application relates to the field of diamond processing, and in particular to diamond products and methods for their preparation. Background Technology

[0002] Single-crystal diamond possesses outstanding properties such as ultra-high hardness, high thermal conductivity, wide spectral transmittance, and chemical stability, making it irreplaceable in cutting-edge fields such as high-power laser windows, quantum sensor chips, semiconductor heat dissipation substrates, and precision optical components. As the performance requirements of high-end equipment and optoelectronic devices continue to increase, the subsurface integrity of single-crystal diamond components is gradually becoming a key factor restricting the overall performance and reliability of these devices.

[0003] Currently, precision machining of single-crystal diamond mainly relies on processes such as mechanical grinding and polishing, chemical mechanical polishing, plasma etching, and laser processing. Because single-crystal diamond is a typical hard and brittle material, with its atoms bonded by strong covalent bonds, material removal is difficult, and the tendency for brittle fracture during processing is significant. Traditional processing methods for single-crystal diamond easily generate subsurface damage layers such as microcracks, dislocations, and lattice distortions on the processed surface. These subsurface defects not only significantly increase optical scattering loss and reduce the light transmittance of components, but also become stress concentration sources during subsequent service, leading to a decrease in the component's damage threshold, deterioration of mechanical strength, and in severe cases, even causing the workpiece to crack and become unusable.

[0004] Therefore, it is necessary to improve traditional technologies. Summary of the Invention

[0005] Based on this, this application provides a diamond product that can effectively reduce subsurface damage and a method for preparing the same.

[0006] The technical solution to the above-mentioned technical problems in this application is as follows.

[0007] The first aspect of this application provides a method for preparing diamond articles, comprising the following steps:

[0008] The single-crystal diamond is mechanically finished; the contact trajectory of the mechanical finishing process is located within the {100} crystal plane of the single-crystal diamond, and the direction of the contact trajectory is within the {100} crystal plane. <110> The included angle of the crystal orientation is ≤2°, and the single-point contact load of the mechanical finishing process is 10 mN~50 mN.

[0009] In some embodiments, in the method for preparing diamond articles, the direction of the contact trajectory is within the {100} crystal plane. <110> The crystallographic directions are parallel.

[0010] In some embodiments, in the method for preparing diamond articles, the single-point contact load of the mechanical finishing process is 10 mN to 30 mN.

[0011] In some embodiments, the single-point contact load of the mechanical finishing process in the method for preparing diamond products is 10 mN to 20 mN.

[0012] In some embodiments, in the method for preparing diamond products, the contact method of the mechanical finishing process includes at least one of reciprocating cyclic contact and rotary cyclic contact, and the total number of cyclic contact cycles in the mechanical finishing process is 5×10 to 5×10. 8 Second-rate.

[0013] In some embodiments, the roughness of the single-crystal diamond is ≤100nm in the method for preparing the diamond article.

[0014] In some embodiments, the temperature of the mechanical finishing process in the method for preparing diamond products is 20°C to 30°C.

[0015] In some embodiments, in the method for preparing diamond articles, the atmospheric conditions for the mechanical finishing process are selected from the atmosphere, inert gas, or vacuum.

[0016] The second aspect of this application provides a diamond article, which is prepared using the diamond article preparation method provided in the first aspect.

[0017] In some embodiments, the diamond article includes at least one of a laser window, a chip, and a semiconductor substrate.

[0018] The first aspect of this application provides a method for preparing diamond articles, which involves mechanically finishing single-crystal diamond by confining the contact trajectory of the mechanical finishing process within the {100} crystal plane of the single-crystal diamond, and aligning the direction of the contact trajectory with the {100} crystal plane. <110> By controlling the crystal orientation angle within a small range and simultaneously controlling the single-point contact load of the mechanical finishing process, the plastic deformation mechanism dominated by dislocation slip is actively induced, the strain energy that triggers crack initiation is consumed, and the crack initiation path on the cleavage plane is effectively blocked, thereby promoting dislocation-dominated plastic accommodation and effectively reducing subsurface damage to diamond products.

[0019] The above-mentioned method for preparing diamond products, by simultaneously controlling the contact trajectory along a specific crystal orientation and the single-point contact load, can achieve a dual suppression of cleavage cracks through "energy dissipation" and "path deflection", transforming "passive avoidance of cleavage planes" into "active construction of plastic zones", and realizing a paradigm shift from "brittle removal" to "controllable plastic removal". Attached Figure Description

[0020] To more clearly illustrate the technical solutions in the embodiments of this application and to more completely understand this application and its beneficial effects, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0021] Figure 1 A reciprocating scratch test loading curve is provided for one embodiment;

[0022] Figure 2 The single-crystal diamond provided in Example 1 along the {100} crystal plane <110> STEM-HAADF image of the cross-section of crystal orientation nano-scratches;

[0023] Figure 3 The single-crystal diamond provided in Example 2 along the {100} crystal plane <110> STEM-HAADF image of the cross-section of crystal orientation nano-scratches;

[0024] Figure 4 The single-crystal diamond provided for Comparative Example 1 along the {111} crystal plane <110> STEM-HAADF image of the cross-section of crystal orientation nano-scratches;

[0025] Figure 5 The single-crystal diamond provided for Comparative Example 2 along the {111} crystal plane <110> STEM-HAADF image of the cross-section of crystal orientation nano-scratches;

[0026] Figure 6 The diagram shows the damage to the diamond spherical indenter used in Comparative Example 3 under a constant normal load of 60 mN.

[0027] Figure 7 The diagram shows the damage caused by replacing the diamond spherical indenter with a constant normal load of 60 mN in Comparative Example 3. Detailed Implementation

[0028] The present application will be further described in detail below with reference to the embodiments and examples. It should be understood that these embodiments and examples are only used to illustrate the present application and are not intended to limit the scope of the present application. The purpose of providing these embodiments and examples is to make the disclosure of the present application more thorough and comprehensive.

[0029] It should also be understood that this application can be implemented in many different forms and is not limited to the embodiments and examples described herein. Those skilled in the art can make various alterations or modifications without departing from the spirit of this application, and the resulting equivalent forms also fall within the protection scope of this application. For example, features described or illustrated as part of one embodiment can be combined in a suitable manner in another embodiment to produce new embodiments. Furthermore, numerous specific details are set forth in the following description to provide a fuller understanding of this application; it should be understood that this application can be implemented without one or more of these details.

[0030] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the specification of this application is for descriptive purposes only and is not intended to be limiting of the application.

[0031] Unless otherwise stated or in case of contradiction, the terms or phrases used herein shall have the following meanings:

[0032] In this application, the terms "multiple", "various", "multiple times", etc., unless otherwise specified, refer to a quantity greater than or equal to 2. For example, "one or more" means one or more than or equal to two.

[0033] The terms “combinations of,” “any combination of,” and “any combination of” used in this article include all suitable combinations of any two or more of the listed items.

[0034] In this document, the term "suitable" as used in "suitable combination", "suitable method", "any suitable method", etc., refers to the ability to implement the technical solution of this application, solve the technical problem of this application, and achieve the expected technical effect of this application.

[0035] In this document, terms such as "preferred," "better," "more suitable," and "ideal" are merely descriptions of more effective implementation methods or embodiments, and should be understood not to limit the scope of protection of this application. If multiple "preferred" terms appear in a technical solution, unless otherwise specified and there are no contradictions or mutual constraints, each "preferred" term shall be independent.

[0036] In this application, terms such as "further," "even further," and "particularly" are used to describe purposes and indicate differences in content, but should not be construed as limiting the scope of protection of this application.

[0037] In this application, "optionally," "optionally," and "optional" mean that something is optional, that is, it means that it is selected from either "with" or "without." If there are multiple "optional" entries in a technical solution, unless otherwise specified, and there are no contradictions or mutual constraints, each "optional" entry shall be independent.

[0038] In this application, the terms "first aspect," "second aspect," "third aspect," "fourth aspect," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or quantity, nor should they be construed as implicitly indicating the importance or quantity of the indicated technical features. Moreover, "first," "second," "third," "fourth," etc., serve only as a non-exhaustive enumeration and should be understood not to constitute a closed limitation on quantity.

[0039] In this application, the technical features described in an open-ended manner include both closed technical solutions consisting of the listed features and open technical solutions that include the listed features.

[0040] In this application, when numerical intervals (i.e., numerical ranges) are mentioned, unless otherwise specified, the distribution of selectable numerical values ​​within the numerical interval is considered continuous, and includes the two endpoints of the numerical interval (i.e., the minimum and maximum values), as well as every numerical value between these two endpoints. Unless otherwise specified, when a numerical interval refers only to integers within that numerical interval, it includes the two endpoint integers of the numerical range, as well as every integer between the two endpoints, which is equivalent to directly listing every integer. When multiple numerical ranges are provided to describe features or characteristics, these numerical ranges can be merged. In other words, unless otherwise specified, the numerical ranges disclosed herein should be understood to include any and all subranges included therein. The "numerical value" in the numerical interval can be any quantitative value, such as a number, percentage, ratio, etc. The term "numerical interval" can be broadly included to include numerical interval types such as percentage intervals, ratio intervals, and proportion intervals.

[0041] Unless otherwise specified, the temperature parameters in this application are permitted to be either constant-temperature treatment or variations within a certain temperature range. It should be understood that the constant-temperature treatment allows temperature fluctuations within the precision range of the instrument control, such as ±5℃, ±4℃, ±3℃, ±2℃, or ±1℃.

[0042] In this application, the terms "room temperature" or "normal temperature" generally refer to 4℃ to 35℃, for example, 20℃ ± 5℃. In some embodiments of this application, "room temperature" or "normal temperature" refers to 10℃ to 30℃. In some embodiments of this application, "room temperature" or "normal temperature" refers to 20℃ to 30℃.

[0043] In this application, if the unit of a data range is only followed by the right endpoint, it indicates that the units of the left and right endpoints are the same. For example, 3~5 h means that the units of the left endpoint "3" and the right endpoint "5" are both h (hours).

[0044] All references to documents mentioned in this application are incorporated herein by reference as if each document were individually incorporated by reference. Unless they conflict with the inventive purpose and / or technical solution of this application, all cited documents are incorporated herein by reference in their entirety and for all purposes. When citing documents in this application, the definitions of relevant technical features, terms, nouns, phrases, etc., are also incorporated herein by reference. When citing documents in this application, examples and preferred embodiments of the cited technical features may also be incorporated herein by reference, but only to the extent that they enable the implementation of this application. It should be understood that when the cited content conflicts with the description in this application, this application shall prevail or modifications shall be made adaptably to the description in this application.

[0045] The mass or weight of the relevant components mentioned in the embodiments of this application can refer not only to the specific content of each component, but also to the proportional relationship of mass or weight between the components. Therefore, any scaling up or down of the content of the relevant components according to the embodiments of this application is within the scope disclosed in the embodiments of this application. Specifically, the mass or weight mentioned in the embodiments of this application can be units known in the chemical industry, such as μg, mg, g, and kg.

[0046] Traditional chemical mechanical polishing can easily leave chemical residue damage on the processed surface; traditional mechanical grinding and polishing can easily cause microcracks, cleavage defects and other difficult-to-repair damage layers on the surface and subsurface of the workpiece due to the mechanical stress removal; special processing technologies such as plasma-assisted polishing and laser processing require expensive special equipment or have poor process stability.

[0047] One embodiment of this application provides a method for preparing a diamond product, comprising the following steps:

[0048] The single-crystal diamond is mechanically finished; the contact trajectory of the mechanical finishing process is located within the {100} crystal plane of the single-crystal diamond, and the direction of the contact trajectory is within the {100} crystal plane. <110> The crystal orientation angle is ≤2°, and the single-point contact load of mechanical finishing is 10 mN~50 mN.

[0049] By confining the contact trajectory of the mechanical finishing process within the {100} crystal plane of the single-crystal diamond, and aligning the direction of the contact trajectory with the {100} crystal plane... <110> By controlling the crystal orientation angle within a small range and simultaneously controlling the single-point contact load of the mechanical finishing process, the plastic deformation mechanism dominated by dislocation slip is actively induced, the strain energy that triggers crack initiation is consumed, and the crack initiation path on the cleavage plane is effectively blocked, thereby promoting dislocation-dominated plastic accommodation and effectively reducing subsurface damage to diamond products.

[0050] The method for preparing this diamond product, by simultaneously controlling the contact trajectory along a specific crystal orientation and the single-point contact load, can achieve a dual suppression of cleavage cracks through "energy dissipation" and "path deflection", transforming "passive avoidance of cleavage planes" into "active construction of plastic zones", and realizing a paradigm shift from "brittle removal" to "controllable plastic removal".

[0051] It is understandable that the paradigm shift from "brittle removal" to "controlled plastic removal" involves controlling the stress on the material to be removed below a certain critical threshold, so that the material is removed smoothly in the form of plastic deformation rather than in the form of brittle fracture.

[0052] Furthermore, the above-mentioned method for preparing diamond products can block the crack initiation path of the {111} cleavage plane and suppress crack propagation along the {111} cleavage plane.

[0053] It can be understood that the contact trajectory during mechanical finishing lies within the {100} crystal plane of the single-crystal diamond. This means that during the mechanical finishing process, the overall motion trajectory formed by all contact points between the machining tool and the single-crystal diamond lies within the plane of the {100} crystal plane of the single-crystal diamond, and the machining load is applied perpendicular to the {100} crystal plane. The direction of the contact trajectory is within the {100} crystal plane. <110> The included angle of the crystal orientation is ≤2°, referring to the direction of the contact trajectory formed by the movement of the machining tool relative to the single crystal diamond during mechanical finishing on the plane containing the {100} crystal plane, and the direction of the contact trajectory relative to the single crystal diamond within that crystal plane. <110> The plane angle between the two crystal orientations is controlled within 2°, so that the contact trajectory is close to the target. <110> The crystal orientation is parallel. Further, this can be understood as the contact trajectory being parallel to the {100} crystal plane. <110> Crystal orientation is controlled with an accuracy within ±2°.

[0054] In some of these examples, in the method of preparing diamond products, the direction of the contact trajectory is within the {100} crystal plane. <110> The crystallographic directions are parallel.

[0055] Understandably, in some of these examples, the {100} crystal planes of the single-crystal diamond workpiece to be processed are calibrated using crystallographic characterization techniques such as X-ray diffraction (XRD), electron backscatter diffraction (EBSD), or a combination of focused ion beam (FIB) and transmission electron microscopy (TEM). <110> The orientation is determined, and visible reference marks are prepared on the workpiece edge or fixture using laser or FIB techniques to ensure traceability of crystal orientation during subsequent processing. The marked single-crystal diamond workpiece is fixedly clamped on the workpiece stage of the processing device (such as a nanoindenter, nanoscratcher, single-point diamond lathe, precision grinding machine, or friction polishing machine). The workpiece is pre-aligned in crystal orientation using a corresponding rotation adjustment mechanism, so that the predetermined processing contact trajectory direction is parallel to the {100} crystal plane of the workpiece. <110> Crystal orientation alignment accuracy is controlled within ±2°. Furthermore, based on integrated scratch force sensors or acoustic emission sensors, the fluctuations of tangential and normal forces or acoustic emission signals during the processing are monitored in real time. When high-frequency, high-amplitude acoustic emission signals or abnormal force fluctuations are detected (corresponding to cleavage crack initiation), the load magnitude or trajectory direction deviation angle is automatically adjusted to bring the processing state back to the dislocation plastic domain.

[0056] It can be understood that the single-point contact load in mechanical finishing refers to the normal load applied at the independent contact point between the machining component (tool or indenter) and the surface of the single crystal diamond during the mechanical finishing process; this load is the force borne by a single effective contact point, which is different from the total load of the tooling. It is understood that the single-point contact load of mechanical finishing includes, but is not limited to, 10 mN, 11 mN, 12 mN, 13 mN, 14 mN, 15 mN, 16 mN, 17 mN, 18 mN, 19 mN, 20 mN, 21 mN, 22 mN, 23 mN, 24 mN, 25 mN, 26 mN, 27 mN, 28 mN, 29 mN, 30 mN, 31 mN, 32 mN, 33 mN, 34 mN, 35 mN, 36 mN, 37 mN, 38 mN, 39 mN, 40 mN, 41 mN, 42 mN, 43 mN, 44 mN, 45 mN, 46 mN, 47 mN, 48 mN, 49 mN, and 50 mN; in some examples, it can be any two of these point values ​​as the end values ​​within the range, the same below.

[0057] In some of these examples, the single-point contact load during mechanical finishing in the preparation method of diamond products is 10 mN to 30 mN.

[0058] In some of these examples, the single-point contact load during mechanical finishing in the preparation method of diamond products is 10 mN to 20 mN.

[0059] In some examples, the contact method for mechanical finishing in the preparation method of diamond products includes at least one of reciprocating cyclic contact and rotary cyclic contact, and the total number of cyclic contact cycles in the mechanical finishing process is 5×10~5×10 8 Times. It can be understood that the total number of contact cycles in mechanical finishing is not limited to 5 × 10 times, 10... 2 Times, 5×10 2 Next, 10 3 Times, 5×10 3 Next, 10 4 Times, 5×10 4 Next, 10 5 Times, 5×10 5 Next, 10 6 Times, 5×10 6 Next, 10 7 Times, 5×10 7 Next, 10 8 It can be understood that by controlling the single-point contact load of the mechanical finishing process and controlling the total number of cyclic contact cycles, the removal depth can be determined. During the cyclic contact process, local plastic accommodation in the contact area is achieved through dislocation accumulation and stacking fault structure formation, thereby suppressing crack initiation and propagation along the {111} cleavage plane and achieving low subsurface damage processing.

[0060] Based on the contact trajectory of a specific crystal orientation, and combined with a combination of processing parameters of low load and high cycle number, the stress during processing is controlled within a reasonable range. This can promote dislocation slip in the {100} crystal plane while keeping it below the critical threshold of cleavage in the {111} crystal plane, so as to achieve stable material removal in the plastic deformation domain.

[0061] In some of these examples, the temperature for mechanical finishing in the preparation method of diamond products is 20℃~30℃.

[0062] In some of these examples, the atmosphere conditions for the mechanical finishing process in the preparation method of diamond articles are selected from the atmosphere, an inert gas, or a vacuum. It is understood that the inert gas includes, but is not limited to, at least one of nitrogen and argon.

[0063] In some of these examples, the components used in the mechanical finishing process of the diamond product preparation method include diamond cutting tools or diamond indenters.

[0064] In some of these examples, the roughness of the single-crystal diamond in the preparation method of the diamond article is ≤100 nm. Optionally, the roughness of the single-crystal diamond is 10 nm to 100 nm. It is understood that the roughness of the single-crystal diamond includes, but is not limited to, 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, and 100 nm.

[0065] In some of these examples, the method for preparing diamond products involves pre-treating single-crystal diamonds with mechanical polishing before mechanical finishing to achieve a roughness of ≤100 nm.

[0066] In some of these examples, the method for preparing diamond products includes, before mechanical finishing, cleaning the single-crystal diamond.

[0067] Optionally, the cleaning agent used in the cleaning process includes at least one of acetone, ethanol, and water.

[0068] It is understandable that cleaning is performed on single-crystal diamonds after mechanical polishing pretreatment.

[0069] The above-mentioned method for preparing diamond products has the following beneficial effects:

[0070] (1) Significantly improved subsurface damage control: Through precise crystal orientation control and low-load cyclic processing parameters, the material removal mode is fundamentally changed, transforming the material removal mode in the processing process from being dominated by "brittle fracture removal" in traditional machining to being dominated by "plastic slip removal". This means that the material will not undergo brittle fracture during removal, and therefore will not generate microcracks perpendicular to the processing surface, thus maximizing the suppression of subsurface crack damage.

[0071] (2) High stability of processing quality: The crystal orientation and load range are strictly controlled during the processing. The stress distribution during the processing is in a controllable ideal range. The uniformity of material removal on the surface of the workpiece is significantly improved, effectively reducing cleavage defects or scratches caused by local stress concentration.

[0072] (3) Strong Applicability and Promotability: The process path of this application is simple and has low equipment requirements, making it highly applicable to industrial applications. Unlike special processing technologies such as plasma-assisted polishing and laser processing, which require specialized high-end equipment, the crystal orientation calibration process and low-load cyclic processing process involved in this application can be implemented on general-purpose industrial equipment in the existing ultra-precision machining industry. There is no need to introduce additional specialized high-end equipment or implement it in a specialized environment, which significantly reduces the implementation cost and threshold of the process. In addition, the processing efficiency of this application is significantly improved compared with traditional processes. While ensuring high processing quality, it also takes into account processing efficiency, making it suitable for large-scale industrial production.

[0073] One embodiment of this application provides a diamond product prepared using the above-described method for preparing diamond products.

[0074] The diamond products provided in this application have lower subsurface damage, higher surface integrity, reduced brittle wear debris, and improved optical surface quality.

[0075] In some examples, the diamond article includes at least one of a laser window, a chip, and a semiconductor substrate. Optionally, the diamond article includes at least one of a high-power laser window, a quantum sensing chip, and a semiconductor heat dissipation substrate.

[0076] The present application will be described in further detail below with reference to specific embodiments, but the embodiments of the present application are not limited thereto.

[0077] Example 1

[0078] (1) The loading surface of the single crystal diamond is mechanically polished to make its roughness less than 100 nm, and then ultrasonically cleaned with acetone, ethanol and deionized water for 30 min respectively, and then placed in a 60℃ oven for more than 3 hours.

[0079] (2) The {100} crystal plane and the [missing information] of the single-crystal diamond workpiece to be processed were characterized by electron backscatter diffraction (EBSD). <110> The direction is fixedly clamped on the nano-scratcher, so that the predetermined machining contact trajectory direction is parallel to the {100} crystal plane of the workpiece. <110> Crystal orientation: Based on the integrated scratch force sensor, the fluctuation of tangential and normal forces during the processing is monitored in real time. When abnormal force fluctuations are detected, the load magnitude or trajectory direction deviation angle is automatically adjusted to bring the processing state back to the dislocation plastic domain.

[0080] The loading function based on the nano-scratch instrument is as follows: Figure 1 As shown. Figure 1In the figure, the vertical axis represents the normal force (mN), in millinewtons; the horizontal axis represents the lateral displacement (μm), in micrometers; and the horizontal axis represents the time (s), in seconds.

[0081] Cross-sectional samples were prepared on the machined surface of single-crystal diamond workpieces using a focused ion beam scanning electron microscope (FIB-SEM) system. The damage state of defects such as subsurface dislocations was observed using a transmission electron microscope (TEM). The roughness of the machined surface of the single-crystal diamond workpieces was characterized by an atomic force microscope (AFM).

[0082] Based on a nano-scratch instrument, a diamond spherical indenter with a tip diameter of 1 μm is used. Figure 1 The loading function shown applies a constant normal load of 20 mN and performs 50 reciprocating scratches along the {100} crystal plane of a single-crystal diamond. <110> The crystal orientation and the obtained damage cross section were characterized by high-angle annular dark-field imaging (TEM-HAADF) using transmission electron microscopy. The characterization results are as follows: Figure 2 As shown in the figure. The results show that only dislocation array defects were generated, and no brittle damage defects such as cracks were generated.

[0083] Example 2

[0084] The difference from Example 1 is as follows:

[0085] Based on a nano-scratcher, a diamond spherical indenter with a tip diameter of 2 μm was used to apply a constant normal load of 20 mN and perform 500 reciprocating scratches along the {100} crystal plane of a single-crystal diamond. <110> STEM-HAADF image of the damaged section obtained from crystal orientation test is shown below Figure 3 As shown in the figure. The results show that only a small number of dislocation defects were generated, and no brittle damage defects such as cracks were generated.

[0086] Comparative Example 1

[0087] The difference from Example 1 is that the predetermined machining contact trajectory direction is parallel to the {111} crystal plane of the workpiece. <110> Crystal orientation.

[0088] Based on a nano-scratcher, using a diamond spherical indenter with a tip diameter of 1 μm, a constant normal load of 20 mN was applied, and 50 reciprocating scratches were performed along the {111} crystal plane of a single-crystal diamond. <110> STEM-HAADF image of the damaged section obtained from crystal orientation test is shown below Figure 4 As shown in the figure. The results indicate that brittle damage defects such as deep indentations and numerous cracks were produced.

[0089] Comparative Example 2

[0090] The difference from Example 2 is that the predetermined machining contact trajectory direction is parallel to the {111} crystal plane of the workpiece. <110> Crystal orientation.

[0091] Based on a nano-scratcher, a diamond spherical indenter with a tip diameter of 2 μm was used to apply a constant normal load of 20 mN and perform 500 reciprocating scratches along the {111} crystal plane of a single-crystal diamond. <110> STEM-HAADF image of the damaged section obtained from crystal orientation test is shown below Figure 5 As shown in the figure. The results show that very deep indentations and numerous brittle damage defects such as cracks were produced.

[0092] Comparative Example 3

[0093] The difference from Example 1 is that a constant normal load of 60 mN is applied.

[0094] Based on a nano-scratcher, a diamond spherical indenter with a tip diameter of 1 μm was used to apply a constant normal load of 60 mN along the {100} crystal plane of a single-crystal diamond. <110> The direction was set, and the number of reciprocating scratches was set to 50. The test results showed that the indenter broke apart during the first few reciprocating scratches. Figure 6 As shown. A new, intact diamond spherical indenter with a 1 μm diameter tip was installed, and a constant normal load of 60 mN was applied again along the {100} crystal plane of the single-crystal diamond. <110> The direction was set, and the number of reciprocating scratches was set to 50. The results showed that the indenter still broke apart during the first few reciprocating scratches. Figure 7 As shown.

[0095] Comparative Example 4

[0096] The difference from Example 2 is that when a constant normal load of 5 mN is applied, only weak frictional contact occurs, which cannot achieve effective material removal.

[0097] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0098] The embodiments described above are merely illustrative of several implementation methods of this application, intended to facilitate a detailed understanding of the technical solutions of this application, but should not be construed as limiting the scope of protection of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the scope of protection of this application. It should be understood that technical solutions obtained by those skilled in the art based on the technical solutions provided in this application through logical analysis, reasoning, or limited experimentation are all within the scope of protection of the appended claims. Therefore, the scope of protection of this patent application should be determined by the content of the appended claims, and the specification can be used to interpret the content of the claims.

Claims

1. A method for preparing diamond products, characterized in that, Includes the following steps: The single-crystal diamond is mechanically finished; the contact trajectory of the mechanical finishing process is located within the {100} crystal plane of the single-crystal diamond, and the direction of the contact trajectory is within the {100} crystal plane. <110> The included angle of the crystal orientation is ≤2°, and the single-point contact load of the mechanical finishing process is 10 mN~50 mN.

2. The method for preparing diamond products as described in claim 1, characterized in that, The direction of the contact trajectory is within the {100} crystal plane. <110> The crystallographic directions are parallel.

3. The method for preparing diamond products according to any one of claims 1 to 2, characterized in that, The single-point contact load of the mechanical finishing process is 10 mN~30 mN.

4. The method for preparing diamond products as described in claim 3, characterized in that, The single-point contact load of the mechanical finishing process is 10 mN~20 mN.

5. The method for preparing diamond products according to any one of claims 1 to 2 and 4, characterized in that, The contact method of the mechanical finishing process includes at least one of reciprocating cyclic contact and rotary cyclic contact, and the total number of cyclic contact cycles in the mechanical finishing process is 5×10~5×10 8 Second-rate.

6. The method for preparing diamond products according to any one of claims 1 to 2 and 4, characterized in that, The roughness of the single-crystal diamond is ≤100 nm.

7. The method for preparing diamond products according to any one of claims 1 to 2 and 4, characterized in that, The temperature for the mechanical finishing process is 20℃~30℃.

8. The method for preparing diamond products according to any one of claims 1 to 2 and 4, characterized in that, The atmospheric conditions for the mechanical finishing process are selected from the atmosphere, inert gas, or vacuum.

9. A diamond product, characterized in that, The diamond product is prepared by the method described in any one of claims 1 to 8.

10. The diamond product as described in claim 9, characterized in that, The diamond product includes at least one of a laser window, a chip, and a semiconductor substrate.

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