Transparent high molecular anti-static PP material for semiconductor wafer packaging box

Abstract

The application relates to the technical field of high polymer materials, and discloses a transparent high polymer type antistatic PP material for semiconductor wafer packaging boxes. The material is composed of the following raw materials in parts by weight: PP resin 40-50 parts, PP-g-MAH 3-6 parts, macromolecular antistatic agent 6-10 parts, transparent nucleating agent 0.3-0.5 parts, antioxidant 0.1-0.3 parts, and lubricant 0.3-0.5 parts. Through the synergistic effect of the chemical anchoring and physical compatibilization between the PP-g-MAH and the macromolecular antistatic agent, stable dispersion of the antistatic agent in the PP matrix is realized, the material has permanent antistatic property, high transparency and good mechanical properties, and can meet the strict use requirements of the semiconductor wafer packaging boxes.

Description

Technical Field

[0001] This invention relates to the field of polymer materials technology, specifically to a transparent polymeric antistatic PP material for semiconductor wafer packaging boxes. Background Technology

[0002] Semiconductor wafers face extremely stringent requirements for electrostatic discharge (ESD) protection and cleanliness during manufacturing, transportation, and storage. Polypropylene (PP), with its excellent mechanical properties, good chemical resistance, and ease of processing, has become a crucial material for wafer packaging. To achieve antistatic properties, existing technologies typically add antistatic agents to PP. However, traditional small-molecule antistatic agents (such as glyceryl monostearate and quaternary ammonium salts) have significant drawbacks: their antistatic effect relies on migration and moisture absorption to the product surface, making them highly susceptible to environmental humidity and lacking durability. Furthermore, the small molecules easily precipitate and contaminate the wafer surface, simultaneously degrading the material's optical transparency and mechanical properties.

[0003] In recent years, although there have been attempts to use polymeric antistatic agents in PP, the compatibility between existing polymeric antistatic agents and the PP matrix is ​​generally poor, making it difficult to achieve uniform dispersion at the nanoscale. This results in products with high haze and insufficient transparency, failing to meet the stringent requirements of wafer packaging boxes for high light transmittance and low haze. Summary of the Invention

[0004] To address the aforementioned technical problems, this invention provides a transparent polymeric antistatic PP material for semiconductor wafer packaging boxes.

[0005] The objective of this invention can be achieved through the following technical solutions: A transparent polymeric antistatic PP material for semiconductor wafer packaging boxes comprises the following raw materials in parts by weight: 40-50 parts PP resin, 3-6 parts PP-g-MAH, 6-10 parts macromolecular antistatic agent, 0.3-0.5 parts transparent nucleating agent, 0.1-0.3 parts antioxidant, and 0.3-0.5 parts lubricant; Furthermore, the PP resin is a transparent random copolymer polypropylene; Furthermore, the transparent nucleating agent is sorbitol-based transparent nucleating agent NA-21; Furthermore, the antioxidant is a blend of antioxidant 1010 and antioxidant 168, and the ratio of their amounts is 1:2. Furthermore, the lubricant is pentaerythritol stearate; The macromolecular antistatic agent is prepared by the following steps: Step A1: Add sodium 4-hydroxybutylsulfonate and sodium hydroxide to dioxane and stir thoroughly. Then heat to 50-70℃ and slowly add epichlorohydrin. Stir the reaction for 2-3 hours, distill under reduced pressure, and then slowly add 25wt% sodium hydroxide solution. Heat to 80℃ and react for 2.5-3.5 hours. After the reaction is complete, filter, wash until neutral, and vacuum dry to obtain the terminal epoxy sulfonate derivative. Further, in step A1, the ratio of sodium 4-hydroxybutylsulfonate, sodium hydroxide, dioxane, epichlorohydrin, and sodium hydroxide solution is 0.01 mol: 0.001-0.002 mol: 50 mL: 0.02-0.03 mol: 10 mL; Step A2: Add polyetheramine (molecular weight 400) and 7-octenic acid to the reactor and stir until homogeneous. Then add p-toluenesulfonic acid and react under nitrogen at 120-140℃ for 3-5 hours. Cool to room temperature, wash with petroleum ether, filter and dry to obtain carboxyl-terminated polyether amide. Further, in step A2, the molar ratio of amino groups to the final carboxyl groups of 7-octenic acid in the polyetheramine is 1:2-2.2; Further, the mass of p-toluenesulfonic acid mentioned in step A2 is 0.5wt%-0.9wt% of the total mass of the reactants; Step A3: Add the terminal epoxy sulfonate sodium derivative to hot DMF at 50-60℃ and stir until homogeneous. Then add the terminal carboxyl polyether amide and tetrabutylammonium bromide and stir until homogeneous. Purge with nitrogen for 10 min and react at 90℃ for 5-6 h under nitrogen protection. Remove the solvent by rotary evaporation. After diluting with ethyl acetate, wash twice each with saturated sodium bicarbonate, saturated sodium chloride and deionized water. Dry to obtain the polyether amide derivative. Further, in step A3, the ratio of carboxyl group in the carboxyl-terminated polyether amide, epoxy group in the sodium sulfonate derivative, tetrabutylammonium bromide, DMF, and ethyl acetate is 0.1-0.101 mol: 0.1 mol: 0.005-0.006 mol: 150 mL: 150 mL; Step A4: Under nitrogen protection, add the polyether amide derivative and triethylamine to dry DMF, heat to 50-60℃ and stir for 30 min, then cool to 0℃, add anhydrous dichloromethane and stir until homogeneous, then slowly add dimethyl chlorophosphate dropwise over 1 h, then heat to room temperature and stir for 2-4 h, monitor by TLC, after the reaction is complete, filter, extract, wash successively with saturated sodium bicarbonate solution and saturated brine, rotary evaporate to 20 mL, precipitate with petroleum ether, filter and dry to obtain the macromolecular antistatic agent; Further, in step A4, the ratio of hydroxyl groups, triethylamine, DMF, dichloromethane, and dimethyl chlorophosphate in the polyether amide derivative is 0.1-0.15 mol: 0.12-0.15 mol: 80-120 mL: 200 mL: 0.1 mol.

[0006] The beneficial effects of this invention are: The PP material of this invention uses transparent random copolymer polypropylene as the matrix. By introducing PP-g-MAH as a reactive compatibilizer and compounding it with a specific structure of macromolecular antistatic agent, transparent nucleating agent, and antioxidant system, a functional composite material with both permanent antistatic properties and high transparency is constructed. The macromolecular antistatic agent not only provides efficient and stable antistatic performance through an ion hopping mechanism, but its polar groups on the molecular chain can also generate strong physical / chemical interactions with the anhydride groups of PP-g-MAH, achieving stable nanoscale dispersion and effectively overcoming the industry problem of easy migration and precipitation of traditional small-molecule antistatic agents. Simultaneously, this material maintains excellent optical transmittance, meeting the requirements of semiconductor wafer packaging boxes in terms of transparency and antistatic performance.

[0007] The present invention introduces a macromolecular antistatic agent into the PP material, endowing the material with excellent antistatic properties. This is because the sodium sulfonate groups and phosphate groups contained in the antistatic agent molecule undergo microphase separation in the polymer matrix, forming nanoscale ion clusters. Sodium ions and hydrogen protons in the phosphate ester, as the main charge carriers, can "jump" between adjacent ion clusters under the influence of an external electrostatic field, forming ion-conducting channels, and thus forming a continuous, interconnected conductive network throughout the PP matrix. Furthermore, the cis-bending structure of the polyether segments and double bonds in the antistatic agent molecule gives its molecular chains excellent flexibility. At room temperature, the continuous thermal motion of these segments frequently drives the ion groups to change spatial positions, greatly promoting the ion jumping frequency, thereby significantly reducing surface resistance and improving the antistatic properties of the matrix.

[0008] Furthermore, the PP backbone of PP-g-MAH exhibits good compatibility with the matrix PP resin, allowing it to disperse well within the continuous PP phase. Its highly polar maleic anhydride side chains form strong ion-dipole interactions with sodium sulfonate, phosphate esters, and residual hydroxyl groups in the antistatic agent, thus firmly adsorbing the antistatic agent molecules onto the PP matrix. During PP material synthesis, the anhydride groups of PP-g-MAH can also undergo esterification with residual hydroxyl groups on the antistatic agent molecular chain, forming covalent bonds. This eliminates the surface precipitation and migration failure problems commonly found in traditional small-molecule antistatic agents, achieving permanent and stable dispersion. Detailed Implementation

[0009] The technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0010] Example 1: The macromolecular antistatic agent was prepared by the following steps: Step A1: Add 0.01 mol of sodium 4-hydroxybutylsulfonate and 0.001 mol of sodium hydroxide to 50 mL of dioxane and stir thoroughly. Then heat to 50 °C and slowly add 0.02 mol of epichlorohydrin. Stir and react for 2 h. Distill under reduced pressure and slowly add 10 mL of 25 wt% sodium hydroxide solution. Heat to 80 °C and react for 2.5 h. After the reaction is complete, filter, wash until neutral, and vacuum dry to obtain the terminal epoxy sulfonate derivative. Step A2: Add polyetheramine (molecular weight 400) and 7-octenic acid to the reactor and stir until homogeneous. Then add p-toluenesulfonic acid and react at 120°C under nitrogen for 5 hours. Cool to room temperature, wash with petroleum ether, filter, and dry to obtain carboxyl-terminated polyetheramide. The molar ratio of amino groups to the final carboxyl groups of 7-octenic acid in the polyetheramine is 1:2, and the mass of p-toluenesulfonic acid is 0.5 wt% of the total mass of the reactants. Step A3: Add the terminal epoxy sulfonate sodium derivative to hot DMF at 50℃ and stir until homogeneous. Then add the terminal carboxyl polyether amide and tetrabutylammonium bromide and stir until homogeneous. Purge with nitrogen for 10 min, and then react at 90℃ for 5 h under nitrogen protection. Remove the solvent by rotary evaporation. After diluting with ethyl acetate, wash twice each with saturated sodium bicarbonate, saturated sodium chloride, and deionized water. Dry to obtain the polyether amide derivative. The ratio of carboxyl group in the terminal carboxyl polyether amide, epoxy group in the terminal epoxy sulfonate sodium derivative, tetrabutylammonium bromide, DMF, and ethyl acetate is 0.1 mol: 0.1 mol: 0.005 mol: 150 mL: 150 mL. Step A4: Under nitrogen protection, add the polyether amide derivative and triethylamine to dry DMF, heat to 50℃ and stir for 30 min, then cool to 0℃, add anhydrous dichloromethane and stir until homogeneous, then slowly add dimethyl chlorophosphate dropwise over 1 h, then heat to room temperature and stir for 2 h, monitor by TLC. After the reaction is complete, filter, extract, wash successively with saturated sodium bicarbonate solution and saturated brine, rotary evaporate to 20 mL, precipitate with petroleum ether, filter and dry to obtain the macromolecular antistatic agent. The ratio of hydroxyl groups, triethylamine, DMF, dichloromethane and dimethyl chlorophosphate in the polyether amide derivative is 0.11 mol: 0.12 mol: 80 mL: 200 mL: 0.1 mol.

[0011] Example 2: The macromolecular antistatic agent was prepared by the following steps: Step A1: Add 0.01 mol of sodium 4-hydroxybutylsulfonate and 0.0015 mol of sodium hydroxide to 50 mL of dioxane and stir thoroughly. Then heat to 60 °C and slowly add 0.025 mol of epichlorohydrin. Stir the reaction for 2.5 h, distill under reduced pressure, and then slowly add 10 mL of 25 wt% sodium hydroxide solution. Heat to 80 °C and react for 3 h. After the reaction is complete, filter, wash until neutral, and vacuum dry to obtain the terminal epoxy sulfonate derivative. Step A2: Add polyetheramine (molecular weight 400) and 7-octenic acid to the reactor and stir until homogeneous. Then add p-toluenesulfonic acid and react at 130°C under nitrogen for 4 hours. Cool to room temperature, wash with petroleum ether, filter, and dry to obtain carboxyl-terminated polyetheramide. The molar ratio of amino groups to the final carboxyl groups of 7-octenic acid in the polyetheramine is 1:2.1, and the mass of p-toluenesulfonic acid is 0.65 wt% of the total mass of the reactants. Step A3: Add the terminal epoxy sulfonate sodium derivative to hot DMF at 55℃ and stir until homogeneous. Then add the terminal carboxyl polyether amide and tetrabutylammonium bromide and stir until homogeneous. Purge with nitrogen for 10 min, and then react at 90℃ for 5.5 h under nitrogen protection. Remove the solvent by rotary evaporation. After diluting with ethyl acetate, wash twice each with saturated sodium bicarbonate, saturated sodium chloride, and deionized water. Dry to obtain the polyether amide derivative. The ratio of carboxyl group in the terminal carboxyl polyether amide, epoxy group in the terminal epoxy sulfonate sodium derivative, tetrabutylammonium bromide, DMF, and ethyl acetate is 0.1005 mol: 0.1 mol: 0.0055 mol: 150 mL: 150 mL. Step A4: Under nitrogen protection, add the polyether amide derivative and triethylamine to dry DMF, heat to 55℃ and stir for 30 min, then cool to 0℃, add anhydrous dichloromethane and stir until homogeneous, then slowly add dimethyl chlorophosphate dropwise over 1 h, then heat to room temperature and stir for 3 h, monitor by TLC. After the reaction is complete, filter, extract, wash successively with saturated sodium bicarbonate solution and saturated brine, rotary evaporate to 20 mL, precipitate with petroleum ether, filter and dry to obtain the macromolecular antistatic agent. The molar ratio of hydroxyl groups, triethylamine, DMF, dichloromethane and dimethyl chlorophosphate in the polyether amide derivative is 0.13 mol: 0.14 mol: 100 mL: 200 mL: 0.1 mol.

[0012] Example 3: The macromolecular antistatic agent was prepared by the following steps: Step A1: Add 0.01 mol of sodium 4-hydroxybutylsulfonate and 0.002 mol of sodium hydroxide to 50 mL of dioxane and stir thoroughly. Then heat to 70 °C and slowly add 0.03 mol of epichlorohydrin. Stir and react for 3 h. Distill under reduced pressure and slowly add 10 mL of 25 wt% sodium hydroxide solution. Heat to 80 °C and react for 3.5 h. After the reaction is complete, filter, wash until neutral, and vacuum dry to obtain the terminal epoxy sulfonate derivative. Step A2: Add polyetheramine (molecular weight 400) and 7-octenic acid to the reactor and stir until homogeneous. Then add p-toluenesulfonic acid and react at 140°C under nitrogen for 3 hours. Cool to room temperature, wash with petroleum ether, filter, and dry to obtain carboxyl-terminated polyetheramide. The molar ratio of amino groups to the final carboxyl groups of 7-octenic acid in the polyetheramine is 1:2.2, and the mass of p-toluenesulfonic acid is 0.9 wt% of the total mass of the reactants. Step A3: Add the terminal epoxy sulfonate sodium derivative to hot DMF at 60℃ and stir until homogeneous. Then add the terminal carboxyl polyether amide and tetrabutylammonium bromide and stir thoroughly. Purge with nitrogen for 10 min, and then react at 90℃ for 6 h under nitrogen protection. Remove the solvent by rotary evaporation. After diluting with ethyl acetate, wash twice each with saturated sodium bicarbonate, saturated sodium chloride, and deionized water. Dry to obtain the polyether amide derivative. The ratio of carboxyl group in the terminal carboxyl polyether amide, epoxy group in the terminal epoxy sulfonate sodium derivative, tetrabutylammonium bromide, DMF, and ethyl acetate is 0.101 mol: 0.1 mol: 0.006 mol: 150 mL: 150 mL. Step A4: Under nitrogen protection, add the polyether amide derivative and triethylamine to dry DMF, heat to 60℃ and stir for 30 min, then cool to 0℃, add anhydrous dichloromethane and stir until homogeneous, then slowly add dimethyl chlorophosphate dropwise over 1 h, then heat to room temperature and stir for 4 h, monitor by TLC. After the reaction is complete, filter, extract, wash successively with saturated sodium bicarbonate solution and saturated brine, rotary evaporate to 20 mL, precipitate with petroleum ether, filter and dry to obtain the macromolecular antistatic agent. The ratio of hydroxyl groups, triethylamine, DMF, dichloromethane and dimethyl chlorophosphate in the polyether amide derivative is 0.15 mol:0.15 mol:120 mL:200 mL:0.1 mol.

[0013] Example 4: A method for preparing a transparent polymeric antistatic PP material for semiconductor wafer packaging boxes includes the following steps: 40 parts PP resin, 3 parts PP-g-MAH, 6 parts macromolecular antistatic agent prepared in Example 1, 0.3 parts transparent nucleating agent, 0.1 parts antioxidant, and 0.3 parts lubricant; Preferably, the PP resin is a transparent random copolymer polypropylene; the transparent nucleating agent is a sorbitol-based transparent nucleating agent NA-21; the antioxidant is a blend of antioxidant 1010 and antioxidant 168, and the ratio of the two is 1:2; the lubricant is pentaerythritol stearate. The raw materials were weighed according to the weight proportions. After drying, the PP resin, PP-g-MAH, transparent nucleating agent, antioxidant and lubricant were put into the mixer and stirred thoroughly. The mixture was then transferred to a twin-screw extruder. The macromolecular antistatic agent prepared in Example 1 was added to the side feed port. After melt extrusion, cooling, granulation and drying, a transparent polymeric antistatic PP material for semiconductor wafer packaging boxes was obtained. The temperature of the twin-screw extruder was 170-200℃ and the screw speed was 200-350rpm.

[0014] Example 5: A method for preparing a transparent polymeric antistatic PP material for semiconductor wafer packaging boxes includes the following steps: 45 parts PP resin, 4.5 parts PP-g-MAH, 8 parts macromolecular antistatic agent prepared in Example 2, 0.4 parts transparent nucleating agent, 0.2 parts antioxidant, and 0.4 parts lubricant; Preferably, the PP resin is a transparent random copolymer polypropylene; the transparent nucleating agent is a sorbitol-based transparent nucleating agent NA-21; the antioxidant is a blend of antioxidant 1010 and antioxidant 168, and the ratio of the two is 1:2; the lubricant is pentaerythritol stearate. The raw materials were weighed according to the weight proportions. After drying, the PP resin, PP-g-MAH, transparent nucleating agent, antioxidant and lubricant were put into the mixer and stirred thoroughly. The mixture was then transferred to a twin-screw extruder. The macromolecular antistatic agent prepared in Example 2 was added to the side feed port. After melt extrusion, cooling, granulation and drying, a transparent polymeric antistatic PP material for semiconductor wafer packaging boxes was obtained. The temperature of the twin-screw extruder was 170-200℃ and the screw speed was 200-350rpm.

[0015] Example 6: A method for preparing a transparent polymeric antistatic PP material for semiconductor wafer packaging boxes includes the following steps: 50 parts PP resin, 6 parts PP-g-MAH, 10 parts macromolecular antistatic agent prepared in Example 3, 0.5 parts transparent nucleating agent, 0.3 parts antioxidant, and 0.5 parts lubricant; Preferably, the PP resin is a transparent random copolymer polypropylene; the transparent nucleating agent is a sorbitol-based transparent nucleating agent NA-21; the antioxidant is a blend of antioxidant 1010 and antioxidant 168, and the ratio of the two is 1:2; the lubricant is pentaerythritol stearate. The raw materials were weighed according to the weight proportions. After drying, the PP resin, PP-g-MAH, transparent nucleating agent, antioxidant and lubricant were put into the mixer and stirred thoroughly. The mixture was then transferred to a twin-screw extruder. The macromolecular antistatic agent prepared in Example 3 was added to the side feed port. After melt extrusion, cooling, granulation and drying, a transparent polymeric antistatic PP material for semiconductor wafer packaging boxes was obtained. The temperature of the twin-screw extruder was 170-200℃ and the screw speed was 200-350rpm.

[0016] Comparative Example 1: This comparative example is an antistatic PP material. The difference between this example and Example 6 is that glyceryl monostearate antistatic agent is used instead of the macromolecular antistatic agent prepared in Example 3. All other aspects are the same.

[0017] Comparative Example 2: This comparative example is an antistatic PP material. The difference between this example and Example 6 is that a quaternary ammonium salt antistatic agent is used instead of the macromolecular antistatic agent prepared in Example 3. All other aspects are the same.

[0018] Comparative Example 3: This comparative example is an antistatic PP material. The difference between this example and Example 6 is that a polyether ester amide antistatic agent is used instead of the macromolecular antistatic agent prepared in Example 3.

[0019] The antistatic PP materials prepared in Examples 4-6 and Comparative Examples 1-3 were subjected to performance tests: Antistatic performance test: The surface resistivity of the antistatic PP material was tested in accordance with GB / T 31838.3-2019 "Dielectric and resistive properties of solid insulating materials - Part 3: Resistive properties (DC method) - Surface resistance and surface resistivity". Tensile property test: Refer to test standard ISO 527, the sample size is 170mm×10mm×4mm, and the test condition is 5mm / min; Transmittance test: Refer to GB / T 2410-2008 "Determination of transmittance and haze of transparent plastics" standard. The sample is a 60mm×60mm×2mm injection molded sheet. The transmittance and haze are tested. The test results are shown in Table 1: Table 1: Performance Test Results

[0020] As can be seen from Table 1, the antistatic PP material prepared by this invention not only has excellent antistatic properties, but also maintains good mechanical properties and good light transmittance.

[0021] The above content is merely an example and illustration of the concept of the present invention. Those skilled in the art can make various modifications or additions to the specific embodiments described or use similar methods to replace them, as long as they do not deviate from the scope defined by the inventive concept, they should all fall within the protection scope of the present invention.

Claims

1. A transparent polymeric antistatic PP material for semiconductor wafer packaging boxes, characterized in that, The raw materials include the following parts by weight: 40-50 parts PP resin, 3-6 parts PP-g-MAH, 6-10 parts macromolecular antistatic agent, 0.3-0.5 parts transparent nucleating agent, 0.1-0.3 parts antioxidant, and 0.3-0.5 parts lubricant; The macromolecular antistatic agent is prepared by reacting a polyether amide derivative with dimethyl chlorophosphate. The polyether amide derivative is prepared by reacting a sodium sulfonate derivative with a carboxyl polyether amide. The sodium sulfonate derivative is prepared by reacting epichlorohydrin with sodium 4-hydroxybutylsulfonate. The carboxyl polyether amide is prepared by reacting a polyether amine with 7-octenic acid.

2. The transparent polymeric antistatic PP material for semiconductor wafer packaging boxes according to claim 1, characterized in that, The macromolecular antistatic agent is prepared by the following steps: Step A1: Add sodium 4-hydroxybutylsulfonate and sodium hydroxide to dioxane and stir thoroughly. Then heat to 50-70℃ and slowly add epichlorohydrin. Stir the reaction for 2-3 hours, distill under reduced pressure, and then slowly add 25wt% sodium hydroxide solution. Heat to 80℃ and react for 2.5-3.5 hours. After the reaction is complete, filter, wash until neutral, and vacuum dry to obtain the terminal epoxy sulfonate derivative. Step A2: Add polyetheramine and 7-octenic acid to the reactor and stir evenly. Then add p-toluenesulfonic acid and react under nitrogen at 120-140℃ for 3-5 hours. Cool to room temperature, wash with petroleum ether, filter and dry to obtain carboxyl-terminated polyether amide. Step A3: Add the terminal epoxy sulfonate sodium derivative to hot DMF at 50-60℃ and stir until homogeneous. Then add the terminal carboxyl polyether amide and tetrabutylammonium bromide and stir until homogeneous. Purge with nitrogen for 10 min and react at 90℃ for 5-6 h under nitrogen protection. Remove the solvent by rotary evaporation. After diluting with ethyl acetate, wash twice each with saturated sodium bicarbonate, saturated sodium chloride and deionized water. Dry to obtain the polyether amide derivative. Step A4: Under nitrogen protection, add the polyether amide derivative and triethylamine to dry DMF, heat to 50-60℃ and stir for 30 min, then cool to 0℃, add anhydrous dichloromethane and stir until homogeneous, then slowly add dimethyl chlorophosphate dropwise over 1 h, then heat to room temperature and stir for 2-4 h, monitor by TLC. After the reaction is complete, filter, extract, wash successively with saturated sodium bicarbonate solution and saturated brine, rotary evaporate to 20 mL, precipitate with petroleum ether, filter and dry to obtain the macromolecular antistatic agent.

3. The transparent polymeric antistatic PP material for semiconductor wafer packaging boxes according to claim 2, characterized in that, In step A1, the ratio of sodium 4-hydroxybutylsulfonate, sodium hydroxide, dioxane, epichlorohydrin, and sodium hydroxide solution is 0.01 mol: 0.001-0.002 mol: 50 mL: 0.02-0.03 mol: 10 mL.

4. The transparent polymeric antistatic PP material for semiconductor wafer packaging boxes according to claim 2, characterized in that, The molar ratio of amino groups and 7-octenic acid carboxyl groups in the polyetheramine described in step A2 is 1:2-2.

2.

5. The transparent polymeric antistatic PP material for semiconductor wafer packaging boxes according to claim 2, characterized in that, The mass of p-toluenesulfonic acid mentioned in step A2 is 0.5wt%-0.9wt% of the total mass of the reactants.

6. The transparent polymeric antistatic PP material for semiconductor wafer packaging boxes according to claim 2, characterized in that, In step A3, the ratio of carboxyl group in the carboxyl-terminated polyether amide, epoxy group in the sodium sulfonate derivative, tetrabutylammonium bromide, DMF, and ethyl acetate is 0.1-0.101 mol: 0.1 mol: 0.005-0.006 mol: 150 mL: 150 mL.

7. The transparent polymeric antistatic PP material for semiconductor wafer packaging boxes according to claim 2, characterized in that, In step A4, the ratio of hydroxyl groups, triethylamine, DMF, dichloromethane, and dimethyl chlorophosphate in the polyether amide derivative is 0.1-0.15 mol: 0.12-0.15 mol: 80-120 mL: 200 mL: 0.1 mol.

8. The transparent polymeric antistatic PP material for semiconductor wafer packaging boxes according to claim 1, characterized in that, The PP resin is a transparent random copolymer polypropylene; the transparent nucleating agent is a sorbitol-based transparent nucleating agent NA-21; and the lubricant is pentaerythritol stearate.

9. The transparent polymeric antistatic PP material for semiconductor wafer packaging boxes according to claim 1, characterized in that, The antioxidant is a blend of antioxidant 1010 and antioxidant 168, and the ratio of the two is 1:2.

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