Vapor injector system

CN123005348APending Publication Date: 2026-10-30ASM IP HLDG BV
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Patent Information

Application Number
CN202610550559.4
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2025-04-29
Filing Date
2026-04-24
Publication Date
2026-10-30

AI Technical Summary

Technical Problem

多个注入器组件的存在可能影响室内的气体流动模式,影响温度均匀性,或减少用于晶片装载的可用空间

Benefits of technology

[0016]本发明的实施例的优点在于,注入端口的几何形状可以在很大程度上保持标准化,从而降低复杂性和制造成本。

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Abstract

The invention relates to an injector system for injecting vapor into a process chamber and a substrate processing system comprising a process chamber and an injector system for providing vapor into the process chamber. The injector system comprises at least a first and a second injector, each injector comprising an elongated inner conduit, a series of inlets distributed along the conduit for providing vapor into the conduit, and a series of vapor injection openings distributed along the conduit for providing vapor from the conduit into the process chamber. The injector system further comprises a vapor distributor for providing vapor to the inlets of the injectors. The series of vapor injection openings of the first and second injector are arranged substantially parallel to each other, wherein the openings of the first injector alternate with the openings of the second injector.
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Description

Technical Field

[0001] This invention relates to the field of vapor deposition, and more particularly to an injector system for delivering vapor into a processing chamber. Background Technology

[0002] Chemical vapor deposition (CVD), such as atomic layer deposition (ALD), is widely used in semiconductor manufacturing to deposit thin films onto substrates. In batch processing systems, multiple wafers are processed simultaneously, increasing manufacturing throughput compared to single-wafer processing. These batch processing systems typically utilize vapor injection systems to deliver precursor gases and reactants to the processing chamber.

[0003] In batch furnaces, the vapor injection system typically consists of elongated conduits or pipes located within the processing chamber, characterized by a series of vapor injection openings through which the process gas enters the processing chamber. The design and configuration of these injection systems affect process parameters such as deposition uniformity, film quality, and overall process efficiency.

[0004] With advancements in semiconductor manufacturing technology, batch furnaces have been designed to accommodate increasingly larger wafer loads. Modern batch systems can process more than 150 wafers simultaneously, posing challenges to gas distribution systems. The geometry, positioning, and design of the injection system have become critical factors in achieving consistent processing results across all wafers in a batch.

[0005] In practice, one challenge in vapor injection systems involves the gas flow dynamics within the injector conduit. Injectors typically include an inlet at the end of the conduit to supply vapor into it. Then, along the conduit, the vapor pressure decreases along each vapor injection opening in the direction away from the inlet. With a uniform conduit width and uniform vapor injection openings, this can result in a lower vapor flow rate through openings further away from the inlet.

[0006] Traditional approaches to addressing this challenge typically involve varying the number, spacing, or size of vapor injection openings along the injector length. However, as wafer batch sizes increase, the practical implementation of this variable geometry approach becomes more complex, especially when attempting to maintain precise dimensional control across multiple openings.

[0007] The positioning of the injector relative to the wafer location raises another consideration. In some processes, aligning the injection point with the wafer location can help optimize precursor delivery efficiency. However, as the number of wafers increases, achieving this alignment while maintaining a uniform gas distribution becomes increasingly challenging.

[0008] The physical volume occupied by the injection system within the processing chamber represents another consideration. The presence of multiple injector assemblies can affect gas flow patterns within the chamber, impacting temperature uniformity, or reducing the available space for wafer loading.

[0009] Developing vapor injection systems that can provide uniform gas distribution across large wafer batches while adapting to diverse process requirements and practical manufacturing constraints remains a challenge. Addressing some of these challenges will benefit semiconductor manufacturing processes that rely on batch CVD technologies such as batch ALD. Summary of the Invention

[0010] The purpose of embodiments of the present invention is to provide a good injector system and substrate processing system for injecting vapor into a processing chamber.

[0011] This objective is achieved by the apparatus of the present invention.

[0012] An advantage of embodiments of the present invention is that enhanced uniformity can be achieved in multi-substrate processing operations.

[0013] An advantage of embodiments of the present invention is that it can provide a uniform precursor flow that enters the processing chamber along the entire length of the injector.

[0014] An advantage of embodiments of the present invention is that it can improve the uniformity of the film on the substrate.

[0015] The advantage of embodiments of the present invention is that single-hole injection per wafer can be maintained even for large wafer loads.

[0016] An advantage of embodiments of the present invention is that the geometry of the injection port can be largely standardized, thereby reducing complexity and manufacturing costs.

[0017] An advantage of embodiments of the present invention is that it can minimize the space occupied by multiple injectors in the processing chamber.

[0018] In a first aspect, the present invention relates to an injector system for injecting vapor into a processing chamber, the injector system comprising: at least a first injector and a second injector, each injector comprising: an elongated internal conduit, a series of inlets distributed along the conduit for supplying vapor into the conduit, a series of vapor injection openings distributed along the conduit for supplying vapor from the conduit into the processing chamber, and a vapor distributor for supplying vapor to the inlets of the injector, wherein the series of vapor injection openings of the first injector and the second injector are arranged substantially parallel to each other, wherein the openings of the first injector alternate with the openings of the second injector in a direction along the series of vapor injection openings.

[0019] In a second aspect, the present invention relates to a substrate processing system comprising a processing chamber and an injector system of the first aspect for supplying vapor into the processing chamber.

[0020] In a third aspect, the present invention relates to an injector system for injecting vapor into a processing chamber, the injector system comprising: at least one injector including: an elongated internal conduit, an inlet along the conduit for supplying vapor into the conduit, a series of vapor injection openings distributed along the conduit for supplying vapor from the conduit into the processing chamber, and a flow deflector at the inlet for deflecting the vapor flow entering the conduit through the inlet in a direction along the conduit.

[0021] In a fourth aspect, the present invention relates to an injector system for injecting steam into a processing chamber, the injector system comprising: at least one injector including: an elongated internal conduit, a series of inlets distributed along the conduit for supplying steam into the conduit, a series of steam injection openings distributed along the conduit for supplying steam from the conduit into the processing chamber, and a steam distributor for supplying steam to the inlets of the injector.

[0022] In a fifth aspect, the present invention relates to a substrate processing system comprising a processing chamber and an injector system, as described in the third or fourth aspect, for supplying vapor into the processing chamber.

[0023] Specific and preferred aspects of the invention are set forth in the appended independent and dependent claims. Features in the dependent claims may be appropriately combined with features of the independent claims and other dependent claims, and not merely features expressly set forth in the claims.

[0024] Despite the ongoing improvements, changes, and evolutions in equipment in this field, this concept is considered to represent a substantial new and novel improvement, including deviations from previous practices, thereby providing a more efficient, stable, and reliable device of this nature.

[0025] The above and other features, characteristics, and advantages of the present invention will become apparent from the following detailed description taken in conjunction with the accompanying drawings, which illustrate the principles of the invention by way of example. This description is given for illustrative purposes only and does not limit the scope of the invention. The references to the drawings cited below refer to the accompanying drawings. Attached Figure Description

[0026] Figure 1A This is a front view of an injector system for injecting steam into a processing chamber according to an embodiment of the present invention.

[0027] Figure 1B This is a perspective view of an injector system for injecting steam into a processing chamber according to an embodiment of the present invention.

[0028] Figure 1C This is a side view of an injector system for injecting vapor into a processing chamber according to an embodiment of the present invention.

[0029] Figure 2 This is an exploded view of an injector system for injecting steam into a processing chamber according to an embodiment of the present invention.

[0030] Figure 3 This is a close-up front view of an injector system according to an embodiment of the present invention, showing the alternating arrangement of vapor injection openings between a first injector and a second injector.

[0031] Figure 4 This is a close-up perspective view of an injector system according to an embodiment of the present invention, showing the entrance to the second pre-injector chamber.

[0032] Figure 5 This is a close-up perspective view of an injector system according to an embodiment of the present invention, showing the connection between the first and second pre-injector chambers.

[0033] Figure 6 This is a close-up perspective view of an injector system according to an embodiment of the present invention, showing the central inlet of the first injector.

[0034] Figure 7 This is a close-up perspective view of an injector system according to an embodiment of the present invention, showing the upper inlet of the injector.

[0035] Figure 8A This is a close-up perspective view of an injector system according to an embodiment of the present invention, showing a flow deflector at the inlet.

[0036] Figure 8B This is a close-up perspective view of a flow deflector according to an embodiment of the present invention.

[0037] Figure 9 This is a schematic diagram of the vapor flow in an injector system without a flow deflector according to an embodiment of the present invention.

[0038] Figure 10 This is a schematic diagram of a vapor flow in an injector system with a flow deflector according to an embodiment of the present invention.

[0039] Figure 11 This is a representation of the computational fluid dynamics calculation of the vapor flow in the injector system according to an embodiment of the present invention.

[0040] Figure 12 This is a representation of the computational fluid dynamics calculation of the vapor flow in the injector system according to an embodiment of the present invention.

[0041] Figure 13This is a graph illustrating the outflow patterns of injectors with and without flow deflectors according to an embodiment of the present invention.

[0042] Figure 14 This is a graph illustrating the outflow uniformity across the steam injection opening according to an embodiment of the present invention.

[0043] Figure 15 This is a vertical cross-sectional view of a processing chamber including an injector system according to an embodiment of the present invention.

[0044] Figure 16 This is a cross-sectional view of a portion of the processing chamber, showing a portion of the injector system according to an embodiment of the invention and a portion of the substrate in front of the vapor injection opening of the injector system.

[0045] In different figures, the same reference numerals denote the same or similar elements. Detailed Implementation

[0046] The invention will be described with reference to specific embodiments and certain accompanying drawings, but is not limited thereto; rather, it is defined solely by the claims. The described drawings are illustrative only and not restrictive. In the drawings, the dimensions of some elements may be exaggerated and not drawn to scale for illustrative purposes. Dimensions and relative dimensions do not correspond to an actual reduction in scale for the practice of the invention.

[0047] Furthermore, the terms first, second, third, etc., used in the specification and claims are used to distinguish similar elements and are not necessarily used to describe an order in time, space, sequence, or any other way. It should be understood that the terms thus used are interchangeable where appropriate, and the embodiments of the invention described herein can operate in orders other than those described or shown herein.

[0048] Furthermore, the terms top, bottom, above, below, etc., used in the specification and claims are for descriptive purposes and not necessarily for describing relative positions. It should be understood that such terms are interchangeable where appropriate, and the embodiments of the invention described herein can operate in orientations other than those described or shown herein.

[0049] It should be noted that the term "comprising" as used in the claims should not be construed as limited to the devices listed thereafter; it does not exclude other elements or steps. Therefore, it should be interpreted as the presence of the specified mentioned features, integers, steps, or components, but does not exclude the presence or addition of one or more other features, integers, steps, or components, or groups thereof. Thus, the term "comprising" covers the presence of only the stated features as well as the presence of these features and one or more other features. Therefore, the term "comprising" according to the invention also includes the absence of other components as an example. Therefore, the scope of the expression "device comprising devices A and B" should not be construed as limited to a device consisting only of components A and B. This means that for the present invention, the only relevant components of the device are A and B.

[0050] Similarly, it should be noted that the term "connection" used in the claims should not be construed as limited to direct connection. The terms "connection" and "linkage," as well as their derivatives, may be used. It should be understood that these terms are not intended to be synonyms with each other. Therefore, the scope of the statement "device A is connected to device B" should not be limited to devices or systems where the output of device A is directly connected to the input of device B. This implies the existence of a path between the output of A and the input of B, which may include other devices or apparatus. "Connection" can mean two or more elements in direct physical or electrical contact, or two or more elements that are not in direct contact but still cooperate or interact with each other.

[0051] Throughout this specification, the reference to "an embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with that embodiment is included in at least one embodiment of the invention. Therefore, the phrases "in an embodiment" or "in one embodiment" appearing in various places throughout this specification do not necessarily refer to the same embodiment, but may refer to the same embodiment. Furthermore, in one or more embodiments, particular features, structures, or characteristics may be combined in any suitable manner, as will be apparent to those skilled in the art based on this disclosure.

[0052] Similarly, it should be understood that in the description of exemplary embodiments of the invention, various features of the invention are sometimes grouped together in a single embodiment, drawing, or description for the purpose of simplification and to aid in understanding one or more of the various inventive aspects. However, this method of disclosure should not be construed as reflecting an intention that the claimed invention requires more features than expressly recited in each claim. Rather, as reflected in the following claims, inventive aspects lie in fewer than all features of a single foregoing disclosed embodiment. Therefore, the claims following the detailed description are expressly incorporated herein, wherein each claim is independently a separate embodiment of the invention.

[0053] Furthermore, while some embodiments described herein include features included in other embodiments but not all features included in other embodiments, combinations of features from different embodiments are intended to be within the scope of the invention and form different embodiments, as will be understood by those skilled in the art. For example, in the appended claims, any claimed embodiment may be used in any combination.

[0054] Furthermore, some embodiments herein are described as methods or combinations of method elements, which can be implemented by a processor of a computer system or other means for performing the function. Thus, a processor having the necessary instructions for performing such methods or method elements forms means for performing such methods or method elements. Moreover, the elements of the apparatus embodiments described herein are examples of means for performing the functions performed by those elements to implement the invention.

[0055] Numerous specific details are set forth in the description provided herein. However, it should be understood that embodiments of the invention can be practiced without these specific details. In other instances, well-known methods, structures, and techniques have not been shown in detail so as not to obscure the understanding of this specification.

[0056] In a first aspect, the present invention relates to an injector system for injecting vapor into a processing chamber, the injector system comprising: at least a first injector and a second injector, each injector comprising: an elongated internal conduit, a series of inlets distributed along the conduit for supplying vapor into the conduit, a series of vapor injection openings distributed along the conduit for supplying vapor from the conduit into the processing chamber, and a vapor distributor for supplying vapor to the inlets of the injector, wherein the series of vapor injection openings of the first injector and the second injector are arranged substantially parallel to each other, wherein the openings of the first injector alternate with the openings of the second injector in a direction along the series of vapor injection openings.

[0057] In embodiments, the vapor may include any vapor or gaseous phase material to be introduced into the processing chamber. The vapor may be used to process a substrate, such as for depositing a layer on the substrate or for etching the substrate, but this is not required. In embodiments, the vapor may contain reactive gases, such as gaseous precursors that can be used for chemical vapor deposition. In embodiments, the vapor may contain active materials for cleaning, deposition, or etching processes. In some embodiments, the vapor may contain inert gases, such as nitrogen or argon.

[0058] In embodiments, the elongated internal conduit can be a fluid channel or conduit contained within the injector. In embodiments, the elongated internal conduit extends in a substantially linear or curved manner. In embodiments, the conduit is arranged to receive vapor from each inlet and to conduct the vapor (typically along the elongated axis of the conduit) to each vapor injection opening. In embodiments, each inlet is fluidly connected to each vapor injection opening via the internal conduit. The conduit can have any shape, such as cylindrical or cuboid. The wall of the elongated internal conduit can be a conduit, which can be made of any material chemically resistant to vapor. For example, the wall can be a metal alloy capable of withstanding high temperatures, or a structured ceramic conduit designed for highly corrosive environments. In embodiments, the injector can comprise or be formed of quartz, silicon, or silicon carbide.

[0059] Typically, the series of inlets includes multiple inlets. In embodiments, the inlets may be openings, ports, holes, or orifices in the wall of the injector, distributed along an elongated internal conduit through which vapor is supplied from a vapor distributor into the conduit. Typically, the inlets are distributed along the elongated axis of the conduit. In embodiments, each inlet may be positioned or arranged to introduce vapor vertically or tangentially into the conduit, i.e., perpendicular to the elongated axis. In embodiments, the inlets may have the same dimensions. In embodiments, the size or shape of the inlets may vary to provide a uniform vapor flow through the vapor injection opening along each injector.

[0060] Typically, the series of vapor injection openings includes multiple vapor injection openings. In an embodiment, for each injector, the vapor injection openings may be arranged such that vapor exits the conduit through the vapor injection opening of the injector, for example, such that the vapor is injected into the processing chamber in a direction substantially perpendicular to the conduit or substantially perpendicular to the elongated axis of the conduit. The vapor injection openings may be openings, ports, holes, or orifices in the wall of the injector along the conduit, arranged to guide vapor from the conduit into the processing chamber. In an embodiment, for each injector, the vapor injection openings may be arranged in a straight line. This arrangement simplifies fabrication and facilitates alignment with the substrate. In an embodiment, for each injector, the vapor injection openings may be arranged at regular intervals along the conduit. This regular spacing ensures a consistent vapor distribution to the substrate.

[0061] The vapor injection openings can have a uniform size or can vary in diameter, for example, to provide a uniform vapor flow through the vapor injection openings along each injector. The vapor injection openings can be arranged in a linear pattern or otherwise configured to match a specific substrate load geometry. An advantage of embodiments of the invention is that, by using the series of inlets fluidly connected to the vapor distributor, the vapor injection openings can have a uniform size and shape while still providing uniform vapor injection along the elongated axis of the conduit.

[0062] The series of vapor injection openings of the injectors (i.e., at least the first and second injectors, and any other injectors, if present) are generally arranged substantially parallel to each other. In other words, the series of vapor injection openings of the first injector may be substantially parallel to the series of vapor injection openings of the second injector, and parallel to the series of vapor injection openings of each of the other injectors, if present. In embodiments, the series of vapor injection openings of different injectors are arranged along or adjacent to each other. For example, the series of vapor injection openings of the first injector may be positioned along or adjacent to the series of vapor injection openings of the second injector.

[0063] For each injector, a line, such as a substantially straight line, can be drawn through the series of vapor injection openings, passing through each vapor injection opening of the injector. For each injector, the series of vapor injection openings can be arranged along the line (e.g., the substantially straight line). In embodiments, the lines for different injectors are substantially parallel to each other. The lines typically extend parallel to the central axis of the conduit. In embodiments, a series of openings or an opening pattern along the elongated axis of the conduit defines this direction. In embodiments, the angle between the axes can be up to 40°, preferably up to 20°, more preferably up to 10°, and even more preferably 0°. Parallel arrangement can improve the uniformity of the injected vapor.

[0064] In embodiments, the injector conduits are arranged substantially parallel to each other, for example at an angle of up to 40°, preferably up to 20°, more preferably up to 10°, or even more preferably 0°. The conduits may be arranged along each other. For example, the conduit of the first injector may be arranged along the conduit of the second injector. This arrangement can result in good and efficient use of the limited available space in the processing chamber.

[0065] Typically, injectors are positioned close to, adjacent to, or along each other. For example, injectors may be located on the same side of the processing chamber. This provides good vapor flow uniformity within the processing chamber.

[0066] In one embodiment, a series of vapor injection openings of the injector are arranged substantially vertically within the processing chamber. In another embodiment, the injector's conduits are arranged substantially vertically within the processing chamber. In yet another embodiment, the injector is arranged substantially vertically within the processing chamber.

[0067] In embodiments, the injector openings of different injectors alternate with each other in a direction along each series of vapor injection openings, or along the elongated axis of the conduit, or in a vertical direction. In embodiments, alternating vapor injection openings of the first injector with those of the second injector can indicate that adjacent vapor injection openings along said direction belong to the order of different injectors in a repeating pattern. In embodiments, a vapor injection opening from the first injector is followed by a vapor injection opening from the second injector, then another vapor injection opening from the first injector, and so on, thereby distributing the vapor more uniformly across the substrate stack that may be located in the processing chamber. In embodiments including two or more injectors, the vapor injection openings of the different injectors can alternate in a regular pattern. For example, in embodiments, a vapor injection opening from the first injector may be followed by a vapor injection opening from the second injector, then a vapor injection opening from the third injector, then another vapor injection opening from the first injector, and so on. This alternation of vapor injection openings can limit the number of vapor injection openings that need to be present in a single injector, while still providing a uniform vapor flow to the processing chamber. In practice, if a vapor injection opening is to be provided for each substrate present in the processing chamber, the number of vapor injection openings can be very large, and the spacing between the vapor injection openings can be very small. This can be a problem for fabricating the injector and providing a uniform vapor flow into the processing chamber.

[0068] In embodiments, each injector may include a flow deflector at at least one inlet (e.g., at each inlet) for deflecting the vapor flow entering the conduit through the inlet in a direction along the conduit. In embodiments, the flow deflector may be a plate, baffle, or vane positioned or arranged for the deflection of the vapor flow. These embodiments can provide improved flow distribution within the conduit and provide a more uniform vapor flow into the processing chamber through the vapor injection openings. The inlets are typically arranged along the conduit and configured such that vapor flows into the conduit in a direction perpendicular to the conduit's elongated axis. Therefore, vapor can be directed directly from the inlets toward the series of vapor injection openings, which are also distributed along the conduit and are typically located on opposite sides of the conduit from the inlets, i.e., opposite sides of the conduit's axis. In this way, vapor flowing into the conduit through the inlets can be directed toward the vapor injection openings. This can result in a higher vapor flow rate through the vapor injection openings closer to the inlet than through those farther from the inlet. The flow deflector can deflect the vapor flow, thereby redirecting or torturing the path of the vapor entering the conduit, causing the vapor to travel in a direction along the conduit's axis or along an elongated axis. As a non-limiting example, deflection can involve redirecting the vapor flow from a vertical orientation to a substantially longitudinal orientation along an elongated axis to increase the uniformity of the injection rate.

[0069] In an embodiment, for each injector, the series of inlets may be distributed substantially symmetrically along the conduit, for example, substantially mirror-symmetrical with respect to a mirror plane perpendicular to the elongated axis of the conduit. In an embodiment, the series of inlets may be divided into an upper inlet and a lower inlet, wherein the upper inlet is mirror-symmetrical with respect to a mirror surface located between the upper and lower inlets. The mirror surface may be substantially located at the central portion (e.g., the midpoint) along the series of vapor injection openings (e.g., along the conduit). This ensures uniform vapor distribution throughout the injector system. In an embodiment, for each injector, the series of inlets may include at least one pair of inlets, wherein each inlet in each pair is located substantially equidistant from the midpoint of the conduit. This arrangement provides flow symmetry and flow uniformity. In an embodiment, each injector includes a vapor injection opening at the central portion (e.g., at the midpoint).

[0070] The midpoint along the series of vapor injection openings can be a reference position along the series, equidistant from its two outermost vapor injection openings (e.g., from the first and last openings of the series). The midpoint of the conduit can be a reference position along the length of the conduit, equidistant from its two endpoints. In an embodiment, for each injector, the series inlet may include a central inlet substantially at the midpoint.

[0071] In one embodiment, for each injector, the series of inlets may be located on substantially opposite sides of the conduit relative to the series of vapor injection openings. In another embodiment, the series of inlets may be located on a first side of a plane parallel to the elongated axis of the conduit, and the series of vapor injection openings may be located on a second side of the plane, different from the first side.

[0072] In embodiments, the injector system can be arranged such that when vapor is supplied to the vapor distributor, the volumetric flow rate of vapor flowing through the vapor injection openings is substantially the same for each vapor injection opening. This results in uniform deposition on all substrates in the processing chamber. Embodiments can provide a uniform or near-uniform flow distribution across all injection points (i.e., vapor injection openings) within acceptable tolerances. For example, this uniformity can be achieved by using adapted inlet dimensions, adapted vapor injection opening dimensions, adapted conduit internal widths, and / or adapted flow paths in the vapor distributor.

[0073] In some embodiments, the vapor distributor may be a component or assembly configured to receive vapor from a vapor source and distribute or route the vapor to the inlet of an injector. In some embodiments, the vapor distributor may include multiple chambers or manifolds connected via fluid couplings to ensure that the vapor is delivered substantially uniformly to each injector.

[0074] In a preferred embodiment, for each injector, the vapor distributor may include a first pre-injector chamber and a second pre-injector chamber. The first pre-injector chamber is arranged parallel to the conduit of the injector and fluidly connected to a series of inlets of the injector. The second pre-injector chamber is fluidly connected to the central portion of the first pre-injector chamber of each injector and also includes an inlet for receiving vapor. The inlet of the second pre-injector chamber may be fluidly connected to a vapor source. This multi-stage distribution system ensures a uniform vapor flow through all injectors.

[0075] In embodiments, each pre-injector chamber may include an auxiliary manifold, chamber, conduit, or volume arranged adjacent to or along, and preferably substantially parallel to, the elongated conduit. The pre-injector chamber receives steam from a steam source before supplying steam to the inlet of the conduit. Examples include cylindrical or rectangular conduits extending along the injector's conduit, providing a buffer to stabilize, distribute, or regulate the steam flow.

[0076] Typically, at least the first and second injectors (e.g., each injector in an injector system) are fluidly connected to the same vapor distributor, which can distribute vapor to at least the first and second injectors, e.g., each injector, to provide a uniform flow rate through each vapor injection opening. Thus, the first and second injectors can be fluidly coupled to the same vapor source via the vapor distributor.

[0077] While two injectors may be preferred due to limited volume space, an injector system can contain more than two injectors fluidly connected to the same vapor distributor. In embodiments, the series of vapor injection openings of each injector are arranged substantially parallel to each other. For example, a system with four parallel injectors fluidly connected to the same vapor distributor still falls within the category of having at least a first and a second injector.

[0078] Each injector may have substantially corresponding features and / or the same arrangement. Each injector may have the same number and / or arrangement of vapor injection openings. Each injector may have the same number and / or arrangement of inlets.

[0079] Any feature of any embodiment of the first aspect may be described independently as corresponding to any embodiment of any other aspect of the invention.

[0080] In a second aspect, the present invention relates to a substrate processing system comprising a processing chamber and an injector system of the first aspect for supplying vapor into the processing chamber.

[0081] In one embodiment, the substrate processing system includes a vapor source fluidly coupled to an injector system (e.g., a vapor distributor for the injector system). The vapor source can be any type of vapor source suitable for supplying vapor to the injector system. In another embodiment, the vapor source may include a gas cylinder, a precursor container, a solid-source evaporator, or a bubbler system.

[0082] In one embodiment, the substrate processing system may include a valve between a vapor source and an injector system. The valve may be located between the vapor source and the injector system, for example, upstream of a vapor distributor. The valve may be located within the vapor distributor. The valve may be located at the inlet of each injector.

[0083] The substrate processing system may include a controller configured to supply vapor to or via an injector system into a processing chamber. The substrate processing system may also include a controller configured to control a valve adapted to open the valve to supply vapor to or via the injector system into the processing chamber, and adapted to close the valve to terminate the supply of vapor.

[0084] In an embodiment, the processing chamber may be configured to receive a substrate carrier supporting a stack of multiple substrates. In an embodiment, the processing chamber includes the substrate carrier. In an embodiment, the substrate carrier includes a stack of multiple substrates. In an embodiment, the substrates are separated from each other by gaps, wherein a series of vapor injection openings of an injector are arranged along the stack. In an embodiment, the spacing between the vapor injection openings of the injector system is substantially the same as the spacing between the substrates in the direction along the stack (e.g., within 20%, preferably within 10%, more preferably the same). The spacing between the vapor injection openings of the injector system is typically the center-to-center distance between consecutive openings on the injector system. When the vapor injection openings alternate between different injectors in the injector system, the spacing between the vapor injection openings of the injector system is typically the spacing between the vapor injection openings of the first injector and the vapor injection opening of the second injector in a direction along or parallel to the injector (e.g., along the vertical direction). The spacing between substrates is typically the center-to-center distance between consecutive substrates in the stack. In an embodiment, the spacing between the vapor injection openings of each injector may be twice the spacing between the substrates. The spacing between the vapor injection openings of a single injector is typically the center-to-center distance between consecutive vapor injection openings along the injector or along a conduit.

[0085] In these embodiments, each substrate may be associated with a dedicated vapor injection opening for supplying the vapor to the substrate. In embodiments, the injector may be arranged such that each vapor injection opening faces the gap between the substrates in the carrier. In embodiments, each gap between the substrates may be associated with a vapor injection opening for supplying vapor in the gap. This alignment ensures that each substrate receives a uniform vapor flow and that the vapor is supplied uniformly to the different substrates stacked. The substrate may be a semiconductor wafer, such as a silicon wafer, gallium arsenide wafer, silicon carbide wafer, germanium wafer, or indium phosphide wafer, or a combination thereof, but the invention is not limited thereto.

[0086] In one embodiment, the injector system may have a number of vapor injection openings substantially equal to the number of substrates that can be supported by a substrate carrier or that can be present in the processing chamber. The vapor injection openings may be evenly divided or distributed among the different injectors (e.g., each injector has an equal number of vapor injection openings). In another embodiment, each of the first and second injectors may have half the total number of openings required for all substrates.

[0087] Typically, the substrates are spaced substantially uniformly along the stack. In this embodiment, the vapor injection openings are spaced substantially uniformly to match the gaps in the substrate stack.

[0088] In embodiments, a substrate carrier can refer to a fixture, frame, or holder that supports multiple substrates at intervals within a processing chamber. Because the substrates are separated from each other by gaps, the surface of each substrate can be processed simultaneously. Examples include wafer carriers or other multi-substrate carriers used in batch reactors, which maintain predetermined gaps between the substrates for uniform processing. In embodiments, the substrate carrier can be a substrate boat.

[0089] In embodiments, the multiple substrates are stacked such that they are stacked vertically or horizontally within a substrate carrier, such that each substrate is spatially separated to allow vapor to flow around the surface of each substrate. As a non-limiting example, such stacking is typical in vertical furnace systems (where substrates are stacked vertically) or batch ALD tools.

[0090] Processing chambers can be batch reactors. Processing chambers can form part of a vapor processing assembly for manufacturing semiconductor devices. Substrate processing systems can include one or more multi-station processing chambers. In some embodiments, substrates move between processing stations in a multi-station substrate processing system. Processing chambers can be part of a cluster tool in which different processes are performed to form integrated circuits.

[0091] In some embodiments, the processing chamber may be a CVD reactor, such as an ALD reactor. In some embodiments, the processing chamber may be a single-wafer ALD reactor for high-volume manufacturing. Typically, the processing chamber may be a batch reactor for simultaneously manufacturing multiple substrates.

[0092] The processing chamber may form part of an ALD assembly. The processing chamber may form part of a CVD assembly. The deposition assembly may be an ALD or CVD deposition assembly. In some embodiments, the processing chamber is part of a cluster tool. Optionally, the processing chamber may include a heater to activate the reaction by raising the temperature of one or more of the substrate and / or reactants and / or precursors.

[0093] Any feature of any embodiment of the second aspect may be described independently as corresponding to any embodiment of any other aspect of the invention.

[0094] In a third aspect, the present invention relates to an injector system for injecting vapor into a processing chamber, the injector system comprising: at least one injector including: an elongated internal conduit, an inlet along the conduit for supplying vapor into the conduit, a series of vapor injection openings distributed along the conduit for supplying vapor from the conduit into the processing chamber, and a flow deflector at the inlet for deflecting the vapor flow entering the conduit through the inlet in a direction along the conduit.

[0095] In one embodiment, the inlet may be positioned along the conduit such that steam is supplied into the conduit in a direction substantially perpendicular to the conduit or substantially perpendicular to the conduit's elongated axis. This arrangement improves flow distribution by redirecting steam along the length of the conduit. In another embodiment, at least one injector may include at least a first injector and a second injector, and also includes a steam distributor for supplying steam to the inlet of the injector. This configuration with multiple injectors and a common distributor enhances uniformity across a large processing chamber.

[0096] In one embodiment, the flow deflector may include a plate arranged in the flow path of the vapor flow entering the duct through the inlet. The plate is designed to effectively redirect the flow and prevent localized high concentrations near the inlet.

[0097] Any feature of any embodiment of the third aspect may be described independently as corresponding to any embodiment of any other aspect of the invention.

[0098] In a fourth aspect, the present invention relates to an injector system for injecting steam into a processing chamber, the injector system comprising: at least one injector including: an elongated internal conduit, a series of inlets distributed along the conduit for supplying steam into the conduit, a series of steam injection openings distributed along the conduit for supplying steam from the conduit into the processing chamber, and a steam distributor for supplying steam to the inlets of the injector.

[0099] Any feature of any embodiment of the fourth aspect may be described independently as corresponding to any embodiment of any other aspect of the invention.

[0100] In a fifth aspect, the present invention relates to a substrate processing system comprising a processing chamber and an injector system, as described in the third or fourth aspect, for supplying vapor into the processing chamber.

[0101] Any feature of any embodiment of the fifth aspect may be described independently as corresponding to any embodiment of any other aspect of the invention.

[0102] The invention will now be described in detail through several embodiments thereof. It will be apparent that other embodiments of the invention can be configured based on the knowledge of those skilled in the art without departing from the technical teachings of the invention, which is limited only by the terms of the appended claims.

[0103] Example 1: Injector system containing two parallel injectors and a flow distributor

[0104] refer to Figure 1A , Figure 1B and Figure 1C These are, respectively, a front view, a perspective view, and a side view, schematic representations of exemplary embodiments of the injector system 100 according to an embodiment of the present invention. Also refer to... Figure 2 This is an exploded view of the same injector system 100. If the injector system 100 is located within a processing chamber, it is used to inject vapor into the processing chamber. The injector system 100 includes a first injector 110 and a second injector 120, each injector including an elongated internal conduit. In this example, injectors 110 and 120 are hollow cylinders, the hollow corresponding to the internal conduit. A series of inlets (114 for the first injector and 124 for the second injector) are distributed along each conduit for supplying vapor into the conduit. Figure 2 As can be observed, for each injector, inlets 114, 124 are distributed substantially symmetrically along the injector. As can be observed in this example, the inlets include a central inlet at the midpoint of the catheter, and additionally include a pair of inlets, each of which is positioned substantially equidistant from the midpoint (i.e., from the central inlet).

[0105] A series of vapor injection openings (112 for the first injector and 122 for the second injector) are distributed along a conduit to supply vapor from the conduit into the processing chamber. For each injector, in this example, the vapor injection openings 112, 122 are arranged at regular intervals along the conduit. This regular spacing ensures a consistent vapor distribution to the substrate. In this example, for each injector 110, 120, the vapor injection openings 112, 122 are arranged in a straight line. This arrangement simplifies fabrication and ensures alignment with the substrate.

[0106] The injector system 100 also includes a vapor distributor for supplying vapor to the inlets of the injectors. The vapor distributor includes a first pre-injector chamber 132 arranged parallel to the first injector 110 and a first pre-injector chamber 134 arranged parallel to the second injector 120. The vapor distributor also includes a second pre-injector chamber 140 fluidly coupled to the central portion of the first pre-injector chambers 132 and 134 of each injector 110, 120. The second pre-injector chamber 140 also includes two inlets 142 for receiving vapor. Each of the two inlets 142 may be fluidly coupled to the same vapor source or to different vapor sources. When the two inlets 142 are fluidly coupled to different vapor sources, different vapors from different sources can be mixed in the second pre-injector chamber 140 and can be supplied as a vapor mixture to the injectors 110, 120. In this example, two inlets 142 are present. It may be advantageous to provide two steams from different steam sources (i.e., each steam sourced from a different steam source) to the second pre-injector chamber 140: for example, it may be preferable to mix the two steams at a specific minimum temperature, which can be provided in the second pre-injector chamber 140 (e.g., by means of a (optionally heated) processing chamber in the second pre-injector chamber 140 that may be at least at the minimum temperature, or by means of a separate heater provided in the second pre-injector chamber 140). Similarly, if more than two steams are to be provided or mixed in the second pre-injector chamber 140, more than two inlets 142 may be provided, each connected to a different steam source. However, alternatively, for example, a single inlet 142 may be provided, for example, if only a single steam is provided, or if multiple steams can be mixed before being provided to a single inlet.

[0107] In this example, the first pre-injector chambers 132, 134 contain internal conduits or tubing arranged parallel to the injectors and fluidly connected to a series of inlets 114, 124 of the injectors. A series of vapor injection openings 112, 122 of the first injector 110 and the second injector 120 are arranged substantially parallel to each other. The vapor injection openings 112 of the first injector 110 are distributed along the vapor injection openings 122 of the second injector 120. As can be observed, in this example, the elongated axes of the injectors 110, 120 are vertically aligned. In this example, the elongated axis of each conduit of the injectors 110, 120 is vertically aligned. The elongated axis may also be referred to as the longitudinal axis or the longest axis. The elongated axis of the conduits of the injectors 110, 120 is generally the axis along which the series of vapor injection openings 112, 122 of the injectors 110, 120 are distributed. The elongated axis of the conduits of the injectors 110, 120 is generally the axis along which the series of inlets of the injectors 110, 120 are distributed.

[0108] Injectors 110 and 120 are adjacent to each other and positioned along each other. In the direction along the series of vapor injection openings 112 and 122, the opening 112 of the first injector 110 alternates with the opening 122 of the second injector 120.

[0109] Figure 3 This is a close-up front view of the injector system 100, showing more clearly the alternating arrangement of vapor injection openings 112, 122 between the first injector 110 and the second injector 120. The view clearly shows how the openings are offset from each other, such that when viewed together, they provide a uniform distribution of injection points. The vapor injection opening 112 of the first injector 110 is located midway between adjacent vapor injection openings 122 of the second injector 120, creating a uniformly spaced array of injection points when viewed together. This arrangement can be directly obtained by using substantially identical injectors 110, 120 and offsetting the entire first injector 110 relative to the second injector 120, thereby offsetting the vapor injection opening 112 of the first injector 110 relative to the vapor injection opening 122 of the second injector 120.

[0110] The first line 101 may pass through a steam injection opening 112 in a series of steam injection openings 112 of the first injector 110, and the second line 102 may pass through a steam injection opening 122 in a series of steam injection openings 122 of the second injector 120. The first line 101 and the second line 102 may be substantially parallel to each other.

[0111] The multi-stage distribution system according to an embodiment of the present invention can provide a uniform vapor flow through each vapor injection opening of all injectors. Figure 4This is a close-up perspective view of the injector system 100, highlighting the inlets 142 at the bottom of the second pre-injector chamber 140 for receiving steam. These inlets 142 serve as entry points for steam into the distribution system. Steam enters through these inlets 142 and is then distributed throughout the second pre-injector chamber 140 before being directed to the first pre-injector chambers 132, 134. The inlets 142 may be connected to the same steam source or to different steam sources, where steam from different sources can then be mixed in a steam distributor, for example, in the second pre-injector chamber 140.

[0112] Figure 5 This is a close-up perspective view of the injector system 100, showing the second pre-injector chamber 140 (in... Figure 5 The fluid (which is semi-transparent) is connected to the opening 144 of the first pre-injector chambers 132, 134. This opening 144 is located in each of the first pre-injector chambers (132, 134; see also...) Figure 2 The central portion of the first pre-injector chambers 132 and 134 helps to create symmetrical or uniform vapor pressure throughout the first pre-injector chambers 132 and 134. The opening 144 allows vapor to flow from the second pre-injector chamber 140 into the first pre-injector chambers 132 and 134, where it is further distributed before entering the injectors 110 and 120.

[0113] Figure 6 This is a close-up perspective view of one of the first pre-injector chambers 132, presented in a semi-transparent manner to show the central inlet 115 of the first injector 110. The central inlet 115 is located at the midpoint of the conduit of the injector 110 and receives vapor from the first pre-injector chamber 132. The central inlet 115 is located near an opening 144 that fluidly connects the second pre-injector chamber 140 to the first pre-injector chambers 132 and 134. The central inlet 115 allows vapor to enter the conduit at its midpoint. This central inlet 115 is one of a series of inlets 114 and 124 distributed along the conduit. Together with the other inlets, it contributes to a symmetrical distribution of vapor within the injector conduit and facilitates uniform outflow through the vapor injection openings 112 and 122.

[0114] although Figure 6 Only the first injector 110 and its first pre-injection chamber 132 are shown, but the features of the second injector 120 and its first pre-injection chamber 134 can be correspondingly identical.

[0115] Figure 7This is a close-up perspective view of the injector system, in which the first pre-injector chamber 132 is presented in a semi-transparent manner to show the upper inlet 117 of one of the injectors 110 for receiving vapor from the first pre-injector chamber. This upper inlet 117 is one of a series of inlets 114, 124 distributed along the conduit. Together with the other inlets, it contributes to achieving a symmetrical distribution of vapor within the injector conduit and facilitates uniform outflow through the vapor injection openings 112, 122. The use of these multiple inlets, coupled to the distributor, significantly contributes to achieving a uniform vapor distribution along the entire length of the injector 110 through all the vapor injection openings 112.

[0116] Example 2: Injector system with flow deflector

[0117] refer to Figure 8A This is a close-up perspective view of an exemplary injector system according to an embodiment of the present invention. Figure 8A In the first pre-injector chamber 132 and the injector 110 are semi-transparent to show the flow deflector 116 in the conduit 113 of the injector 110 located at the inlet 114 of the injector 110.

[0118] Also refer to Figure 8B , Figure 8B This is a close-up perspective view of the flow deflector 116, showing that it includes a plate 118 arranged in the flow path of vapor entering the conduit 113 through the inlet 114. The plate 118 is designed to redirect the incoming vapor flow in the direction along the conduit 113. The flow deflector 116 is supported by a pin 119, which suspends the flow deflector 116 in place relative to the inlet 114, thereby allowing the flow deflector 116 to effectively redirect the vapor flow. Thus, the deflector plate 118 can be a fused silica disc welded to the quartz pin 119, inserted into the inlet 114 region by partially removing and reattaching a portion of the injector tube wall, thereby ensuring precise positioning of the deflector and maintaining the integrity of the tube seal.

[0119] The flow deflector 116, located in the conduit of injector 110, is designed to deflect the vapor flow entering the conduit through inlet 114, thereby directing the vapor to flow along the conduit or along the conduit’s elongated axis (i.e., in the direction of arrow 111), rather than allowing the vapor to flow directly to the nearest vapor injection opening 112.

[0120] In fact, such as Figure 9As shown, a similar injector system is illustrated, but without such a deflector. Without a flow deflector, the vapor flow from the first pre-injector chamber 132 into the internal conduit 113 of the injector 110 presents potential problems. As can be observed, a series of inlets 114 are located on substantially opposite sides of the conduit 113 relative to a series of vapor injection openings 112. Therefore, without a deflector, vapor typically enters the injector conduit perpendicularly to the conduit (i.e., perpendicular to the conduit's elongated axis) through the inlets 114 and preferentially flows towards the vapor injection opening 112 closest to the inlet 114. Figure 9 Arrow 111 in the diagram indicates the local nominal steam flow direction. This may result in an uneven distribution of steam flow rate through steam injection opening 112 along the length of the injector, with higher flow rates through opening 112 closer to inlet 114 and lower flow rates through opening 112 further away.

[0121] In comparison, Figure 10 The diagram illustrates the vapor flow from the first pre-injector chamber 132 into the injector 110 via conduit 113, in the presence of a flow deflector. A flow deflector 116, located at the inlet and in the flow path of the vapor entering conduit 113, redirects the incoming vapor along the conduit, preventing it from immediately exiting through a nearby vapor injection opening. Figure 10 Arrow 111 in the diagram indicates the local nominal vapor flow direction. This reorientation results in a more uniform and consistent flow rate through all vapor injection openings 112. This flow reorientation significantly contributes to achieving a uniform vapor distribution along the entire length of injector 110 through all vapor injection openings 112. In an embodiment, each injector 110, 120 may include flow deflectors 116, 126 at each inlet 114, arranged to deflect the vapor flow entering conduit 113 through inlet 114 in a direction along conduit 113.

[0122] Figure 11 and Figure 12 The computational fluid dynamics (CFD) calculation results of the vapor flow within the injector system 100 with the flow deflector 116 present are shown. Figure 11 and Figure 12 The flow patterns within the injector conduit are shown, demonstrating how the flow deflector helps achieve a more uniform distribution of vapor flow through vapor injection opening 112. These CFD visualizations help illustrate the effectiveness of the flow deflector in redirecting vapor flow along the conduit. It can be observed that... Figure 11 The deflector 116 is offset relative to the inlet. Figure 11In this process, the steam does not enter the conduit completely perpendicularly, but flows in at an angle. Therefore, in order to position the deflector 116 in the flow path to effectively deflect the steam, the deflector 116 is offset relative to the inlet. Conversely, in Figure 12 In this configuration, steam enters the conduit in a direction perpendicular to the conduit, with deflector 116 located directly in front of the inlet.

[0123] Figure 13 The graph in the figure shows an example of the outflow pattern of an injector with an inlet located in the middle of its length, comparing the performance with and without a flow deflector (white dot) located in front of the inlet. The horizontal axis represents the flow injection openings along the injector (where vapor injection opening #1 is located at the first end of the injector, vapor injection opening #90 is located at the second end of the injector, different from the first end; and the inlet is located in the middle, thus between vapor injection openings #45 and #46), while the vertical axis represents the outflow rate of vapor leaving the conduit through the corresponding injection opening. The figure clearly shows that without a flow deflector, the outflow is concentrated near the inlet location, while with a flow deflector, the outflow is more evenly distributed along the entire length of the injector.

[0124] Example 3: Injector system containing two parallel injectors and a flow deflector

[0125] Simulations were performed on an exemplary injector system according to an embodiment of the invention, comprising a parallel injector fluidly coupled to a flow distributor as in Example 1 above, and a flow deflector at each inlet of the injector as in Example 2 above. The vapor injection openings have uniform size and shape. Simulations were performed on a typical TEOS LPCVD process using N2 as the carrier gas. The results of these simulations are presented in... Figure 14 As shown in the figure, Figure 14 This is a graph showing the outflow rate of vapor leaving the conduit through the corresponding injection openings, depending on the location of the vapor injection openings. The graph demonstrates clear outflow uniformity per unit length, with a variation of only about 3% assuming typical flow rates for a TEOS LPCVD process. This high level of uniformity is achieved through a combination of alternating arrangements of openings between the two injectors, symmetrical distribution of the inlets, and the use of flow deflectors. The injector system is arranged such that when vapor is supplied to the vapor distributor, the volumetric flow rate of vapor flowing through the vapor injection openings is substantially the same for each vapor injection opening. This ensures uniform deposition on all substrates in the processing chamber.

[0126] Example 4: Processing chamber including injector system

[0127] refer to Figure 15A semiconductor processing apparatus 201 according to an embodiment of the present invention is shown. The semiconductor processing apparatus 201 includes a processing chamber 202, which is generally bell-shaped, having a closed top end 203, a sealable bottom end 204, and an internal space 206. The semiconductor processing apparatus 201 may be a vertical furnace, and the processing chamber 202 may extend vertically between the top end 203 and the bottom end 204. The semiconductor processing apparatus 201 may include a flange 205 for at least partially supporting the processing chamber 202 at the bottom end 204. When viewed vertically, the flange 205 may be generally circular in shape. The flange 205 may include a central opening 208 and various gas inlets 209 and gas outlets 210 for supplying gas to or removing gas from the internal space 206, respectively. The flange 205 may be configured to partially close the bottom end 204 of the processing chamber 202.

[0128] Semiconductor processing apparatus 201 includes a door plate 211 configured to at least partially enclose the bottom end 204 of a processing chamber 202. A base 212 may be supported thereon on the door plate 211. The base 212 may be configured to support a substrate carrier 213, also referred to as a boat. In some embodiments, the base may not be provided, and the substrate carrier 213 may be directly supported on the door plate 211. By moving the door plate 211 in the vertical direction, the base 212 (if included) and the boat can be inserted into and removed from the processing chamber 202 through the bottom end 204.

[0129] A substrate carrier 213 is configured to support a plurality of substrates 214 therein. The plurality of substrates 214 may be spaced apart in the vertical direction. The substrate carrier 213 may include two end plates 215 spaced apart by a plurality of support rods 216. The plurality of support rods 216 may include multiple sets of grooves 217 or protrusions for supporting the plurality of substrates, each set of grooves 217 or protrusions being spaced apart in the vertical direction from other sets of grooves 217 or protrusions. Each set of grooves 217 or protrusions in the same vertical position forms a corresponding substrate receiving position.

[0130] The semiconductor processing apparatus 201 may include a heater for heating the processing chamber 202 and thereby heating the interior space, for example in the form of a heating coil (218) disposed around the outer surface of the processing chamber 202.

[0131] Semiconductor processing apparatus 201 includes at least one gas inlet 209 in a flange 205 for supplying one or more gases to the interior space 206 of a processing chamber 202. Each gas inlet 209 may be connected to one or more corresponding gas sources 219. Gas sources 219 may include process gas sources and purge gas sources. Gas inlets 209 may be categorized according to the type of gas to be supplied through them; for example, flange 205 may include one or more process gas inlets and one or more purge gas inlets.

[0132] Semiconductor processing apparatus 201 includes at least one injector system 100 according to an embodiment of the present invention. Semiconductor processing apparatus 201 may also include at least one injector system or injector not according to an embodiment of the present invention. Each injector system 100 is in fluid communication with a corresponding gas inlet 209. Semiconductor processing apparatus 201 may include the same number of injector systems 100 as the number of gas inlets 209, or may include fewer injector systems 100 than the number of gas inlets 209, i.e., one or more gas inlets 209 may not be connected to an injector 100. The injector 100 or each injector system 100 extends vertically within processing chamber 202.

[0133] Also refer to Figure 16 This is a cross-sectional view of a portion of the processing chamber 201, showing a portion of the injector system 100 according to an embodiment of the invention, and a portion of the substrate 214 in front of the vapor injection openings 112, 122 of the injector system 100. The injector system 100, or each injector system 100, includes a series of vapor injection openings 112, 122 through which gas or vapor can flow into the processing chamber 202, the vapor injection openings 112, 122 being vertically spaced. (See also...) Figure 16 It can be observed that the spacing (p1) between the vapor injection openings of the injector system 100 (e.g., the center-to-center distance in the vertical direction between the vapor injection openings 112, 122 of the first injector 110 and the second injector 120) is equal to the spacing (p1) between the substrates 214. s As can be observed, in this example, the spacing (p1) between the vapor injection openings 112, 122 of the injector system 100 is between the vapor injection opening 112 of the first injector 110 and the vapor injection opening 122 of the second injector 120. Similarly, the spacing (p2) between the vapor injection openings 112, 122 of each injector 110, 120 of the vapor injector system 100 is the spacing (p) between the substrates 214. s Twice as of the steam injection port 112, 122 of each injector 110, 120 of the steam injector system 100. Similarly, the spacing (p2) between the steam injection ports 112, 122 of each injector 110, 120 of the steam injector system 100 is twice as much as the spacing (p1) between the steam injection ports of the injector system 100.

[0134] The semiconductor processing apparatus 201 includes at least one gas outlet 210 in a flange 205 for removing one or more vapors or gases from the interior space 206 of the processing chamber 202. The at least one gas outlet 210 may be in fluid communication with a vacuum pump 223 via an exhaust line 224.

[0135] Semiconductor processing apparatus 201 may include a controller 226 configured to control various elements of the semiconductor processing apparatus 201. Controller 226 may include memory for storing, for example, program instructions, setpoint values, characteristic data, and other data. Controller 226 may include a processor for executing program instructions loadable from memory. Controller 226 may be configured to receive data from sensors (e.g., pressure sensors, temperature sensors, and / or other types of sensors) in the semiconductor processing apparatus 201. Controller 226 may be configured to control elements of the semiconductor processing apparatus 201 by sending control signals to, for example, airflow control valves, heating elements, and water-cooling elements.

[0136] It should be understood that although preferred embodiments, specific constructions and configurations, and materials have been discussed herein with respect to the apparatus according to the invention, various changes or modifications in form and detail may be made without departing from the scope of the invention. Steps may be added to or removed from the methods described within the scope of the invention.

Claims

1. An injector system for injecting vapor into a processing chamber, the injector system comprising: At least a first injector and a second injector, each injector comprising: Slender internal conduit, A series of inlets, distributed along the conduit, are used to supply steam into the conduit, and A series of steam injection openings, distributed along the conduit, are used to supply steam from the conduit to the processing chamber, and A steam distributor is used to supply steam to the inlet of the injector. The series of vapor injection openings of the first injector and the second injector are arranged substantially parallel to each other, wherein the openings of the first injector and the second injector alternate along the direction of the series of vapor injection openings.

2. The injector system according to claim 1, wherein, Each injector includes a flow deflector at each inlet for deflecting the vapor flow entering the conduit through the inlet in a direction along the conduit.

3. The injector system according to any one of the preceding claims, wherein, For each injector, the series of inlets are distributed substantially symmetrically along the conduit.

4. The injector system according to claim 3, wherein, For each injector, the series of inlets includes at least one pair of inlets, wherein each inlet in each pair is located substantially equidistant from the midpoint of the catheter.

5. The injector according to claim 3 or 4, wherein, For each injector, the series of inlets includes a central inlet located substantially at the midpoint of the catheter.

6. The injector system according to any one of the preceding claims, wherein, For each injector, the series of inlets are located on substantially opposite sides of the conduit relative to the series of vapor injection openings.

7. The injector system according to any one of the preceding claims, wherein, The vapor distributor includes: For each injector, a first pre-injector chamber, with conduits arranged parallel to the injector, is fluidly connected to the series of inlets of the injector, and The second pre-injector chamber is fluidly connected to the central portion of the first pre-injector chamber of each injector, and the second pre-injector chamber also includes an inlet for receiving the vapor.

8. The injector system according to any one of the preceding claims, wherein, For each injector, the vapor injection openings are arranged at regular intervals along the conduit.

9. The injector system according to any one of the preceding claims, wherein, For each injector, the vapor injection opening is arranged in a straight line.

10. The injector system according to any one of the preceding claims, arranged such that when steam is supplied to the steam distributor, the volumetric flow rate of steam flowing through the steam injection opening is substantially the same for each steam injection opening.

11. A substrate processing system, comprising: Processing room, and The injector system according to any one of the preceding claims is used to supply vapor to a processing chamber.

12. The substrate processing system according to claim 11, wherein, The processing chamber is configured to receive a substrate carrier that supports a stack of multiple substrates separated from each other by gaps. Wherein, the series of vapor injection openings of the injector are arranged along the stack, and In this configuration, the spacing between vapor injection openings along the direction of the stack is substantially the same as the spacing between substrates.

13. An injector system for injecting vapor into a processing chamber, the injector system comprising: At least one injector, comprising: Slender internal conduit, The inlet, along the conduit, is used to supply steam into the conduit. A series of steam injection openings, distributed along the conduit, are used to supply steam from the conduit to the processing chamber, and A flow deflector, located at the inlet, is used to deflect the vapor flow entering the conduit through the inlet in a direction along the conduit.

14. The injector system of claim 13, wherein, The inlet is positioned along the conduit such that the vapor is supplied into the conduit in a direction substantially perpendicular to the conduit.

15. The injector system according to claim 13 or 14, wherein the at least one injector comprises at least a first injector and a second injector. It also includes a steam distributor for supplying steam to the inlet of the injector.

16. The injector system according to any one of claims 13 to 15, wherein, The flow deflector includes a plate arranged in the flow path of the vapor flow entering the duct through the inlet.

17. An injector system for injecting vapor into a processing chamber, the injector system comprising: At least one injector, comprising: Slender internal conduit, A series of inlets, distributed along the conduit, are used to supply steam into the conduit, and A series of steam injection openings, distributed along the conduit, are used to supply steam from the conduit to the processing chamber, and A steam distributor is used to supply steam to the inlet of the injector.

18. A substrate processing system, comprising: Processing room, and The injector system according to any one of claims 13 to 17 is used to supply vapor to a processing chamber.