Synchronous control method and device for electroplating equipment
Patent Information
- Application Number
- CN202510558924.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-29
- Publication Date
- 2026-10-30
AI Technical Summary
[0063]上述电镀设备的同步控制方法及装置中,通过分别计算水平轴的第一时间集合以及竖直轴的第二时间集合,从而可以获取同时满足水平轴移动时间以及竖直轴移动时间的最小移动时间。在最小移动时间中,机械臂不仅可以拥有较快的移动效率,而且还可以保证水平轴以及竖直轴可以同步移动,从而在提高电镀效率的基础上,还可以确保机械臂可以精准移动。
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Figure CN123005489A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of electroplating technology, and in particular to a synchronous control method and apparatus for electroplating equipment. Background Technology
[0002] Electroplating is the process of depositing a layer of metal or alloy onto the surface of certain semiconductors using the principle of electrolysis. In the photovoltaic industry, electroplating is commonly used to prepare heterojunction cells (HJT cells). Related technologies often employ mechanical equipment to control the movement of silicon wafers and the electroplating process.
[0003] As the photovoltaic cell market expands, cell manufacturing efficiency is gradually improving. Therefore, precisely controlling the machinery in the electroplating process has become a pressing issue. Summary of the Invention
[0004] Therefore, it is necessary to provide a synchronous control method and device for electroplating equipment that can improve the control accuracy of electroplating equipment in response to the above-mentioned technical problems.
[0005] On one hand, this application provides a synchronous control method for an electroplating equipment, the electroplating equipment including a robotic arm for electroplating a silicon wafer array, the robotic arm moving under the control of a horizontal axis and a vertical axis, the horizontal axis controlling the robotic arm to move horizontally, and the vertical axis controlling the robotic arm to move vertically, the synchronous control method for the electroplating equipment including:
[0006] Determine the motion parameter information of the horizontal axis and the vertical axis at the first and second points;
[0007] Based on the synchronization period and the motion parameter information of the horizontal axis, a first time set required for the horizontal axis to move from the first point to the second point is calculated, and based on the synchronization period and the motion parameter information of the vertical axis, a second time set required for the vertical axis to move from the first point to the second point is calculated. The synchronization period is related to the duration required for the silicon wafer array to move from the first point to the second point.
[0008] The minimum travel time is determined from the intersection of the first time set and the second time set;
[0009] Based on the minimum movement time, the movement trajectories of the horizontal axis and the vertical axis are calculated respectively.
[0010] In one embodiment, the calculation of a first time set required for the horizontal axis to move from the first point to the second point based on the synchronization period and the motion parameter information of the horizontal axis, and the calculation of a second time set required for the vertical axis to move from the first point to the second point based on the synchronization period and the motion parameter information of the vertical axis, include:
[0011] Based on the first preset formula, the synchronization period, and the motion parameter information of the horizontal axis, the initial horizontal path function of the horizontal axis during the process of moving from the first point to the second point is calculated;
[0012] Based on the initial horizontal path function, the velocity information of the horizontal axis is calculated, and the velocity information of the horizontal axis is used to represent the velocity change of the horizontal axis.
[0013] If the speed information of the horizontal axis satisfies the mechanical structure information of the horizontal axis, a first time set that satisfies the movement of the horizontal axis is determined;
[0014] Based on the second preset formula, the synchronization period, and the motion parameter information of the vertical axis, the initial vertical path function of the vertical axis during the process of moving from the first point to the second point is calculated;
[0015] Based on the initial vertical path function, the velocity information of the vertical axis is calculated, and the velocity information of the vertical axis is used to represent the velocity change of the vertical axis;
[0016] If the velocity information of the vertical axis satisfies the mechanical structure information of the vertical axis, a second time set that satisfies the movement of the vertical axis is determined.
[0017] In one embodiment, the velocity information of the horizontal axis includes parameter values of multiple velocity parameters of the horizontal axis, and the velocity information of the vertical axis includes parameter values of multiple velocity parameters of the vertical axis, wherein the velocity parameters include multiple parameters representing changes in motion;
[0018] After calculating the velocity information of the horizontal axis based on the initial horizontal path function, the process includes:
[0019] For each velocity parameter of the horizontal axis, determine the corresponding maximum value;
[0020] If the maximum value of each speed parameter of the horizontal axis is not greater than the corresponding mechanical structure speed information of the horizontal axis, it is determined that the speed information of the horizontal axis satisfies the mechanical structure speed value of the horizontal axis.
[0021] After calculating the velocity information of the vertical axis based on the initial vertical path function, the process includes:
[0022] For each velocity parameter of the vertical axis, determine the corresponding maximum value;
[0023] If the maximum value of each velocity parameter of the vertical axis is not greater than the corresponding mechanical structure velocity information of the vertical axis, it is determined that the velocity information of the vertical axis satisfies the mechanical structure velocity value of the vertical axis.
[0024] In one embodiment, the step of calculating the velocity information of the horizontal axis based on the initial horizontal path function, wherein the velocity information of the horizontal axis is used to represent the velocity change of the horizontal axis, includes:
[0025] If the speed information of the horizontal axis does not meet the mechanical structure information of the horizontal axis, the synchronization period is modified.
[0026] Based on the modified synchronization period, the first preset formula, and the motion parameter information of the horizontal axis, the initial horizontal path function of the horizontal axis and the corresponding speed information are calculated again until the speed information of the horizontal axis satisfies the mechanical structure information of the horizontal axis.
[0027] Based on the initial vertical path function, the velocity information of the vertical axis is calculated. This velocity information, used to represent the velocity changes of the vertical axis, includes:
[0028] If the speed information of the vertical axis does not meet the mechanical structure information of the vertical axis, the synchronization period is modified.
[0029] Based on the modified synchronization period, the second preset formula, and the motion parameter information of the vertical axis, the initial vertical path function of the vertical axis and the corresponding velocity information are calculated again; until the velocity information of the vertical axis satisfies the mechanical structure information of the horizontal axis.
[0030] In one embodiment, modifying the synchronization period when the speed information of the horizontal axis does not satisfy the mechanical structure information of the horizontal axis includes:
[0031] If the speed information of the horizontal axis does not meet the mechanical structure information of the horizontal axis, the current synchronization period is increased by a preset value to obtain the modified synchronization period;
[0032] When the speed information of the vertical axis does not meet the mechanical structure information of the vertical axis, modifying the synchronization period includes:
[0033] If the speed information of the vertical axis does not meet the mechanical structure information of the vertical axis, the current synchronization period is increased by a preset value to obtain the modified synchronization period.
[0034] In one embodiment, after calculating the movement trajectories of the horizontal axis and the vertical axis based on the minimum movement time, the process includes:
[0035] In the horizontal direction, when the foremost point of the silicon wafer array is at the fourth point, the robotic arm is controlled to move along the movement trajectory, the fourth point being located between the first point and the second point.
[0036] In one embodiment, the step of controlling the robotic arm to move along the movement trajectory in the horizontal direction, before the foremost point of the silicon wafer array is at the fourth position, includes:
[0037] When the silicon wafer array is located at the third point, the positions of multiple silicon wafers located in the target row are determined, and a position set is generated. The first point is located between the third point and the fourth point, and the distance between the fourth point and the third point is greater than the length of the silicon wafer matrix.
[0038] Determine the maximum and minimum values from the multiple sets of locations;
[0039] Calculate the difference between the maximum value and the minimum value;
[0040] When the difference is not greater than the error value, the plurality of silicon wafers located in the target row are determined to be in normal operating condition.
[0041] In one embodiment, calculating the difference between the maximum and the minimum values includes:
[0042] When the difference is greater than the error value, the maximum value is removed from the location set, and the track where the silicon wafer corresponding to the maximum value is located is marked;
[0043] Determine a new maximum value from the set of positions;
[0044] Calculate the difference between the new maximum value and the minimum value until the difference is no greater than the error value.
[0045] In one embodiment, after determining that the plurality of silicon wafers located in the target row are in normal operating condition when the difference is not greater than the error value...
[0046] Determine the number of incoming rows in the silicon wafer array;
[0047] When the number of incoming rows of the silicon wafer array reaches a preset value, the robotic arm is controlled to be in a ready state.
[0048] In one embodiment, the synchronous control method for the electroplating equipment further includes:
[0049] The return time of the robotic arm is obtained, and the return time is used to represent the time it takes for the robotic arm to separate from the silicon wafer array and return to the first point after the silicon wafer array electroplating process is completed;
[0050] After calculating the movement trajectories of the horizontal axis and the vertical axis based on the minimum movement time, the process includes:
[0051] When the foremost point of the silicon wafer array is at the fifth position, the robotic arm is first moved upward by controlling the vertical axis, and then moved towards the first position by controlling the horizontal axis, so that the robotic arm returns to the first position within the return time. The second position is located between the first position and the fifth position.
[0052] In one embodiment, obtaining the return time of the robotic arm includes:
[0053] The return time is determined based on the spacing between two adjacent silicon wafers, the length of the silicon wafer matrix, and the transmission speed of the silicon wafer array.
[0054] In one embodiment, the synchronous control method for the electroplating equipment further includes:
[0055] Upon receiving a stop signal, determine the wafer count value and the number of wafer rows;
[0056] Calculate the remainder obtained by dividing the silicon wafer count by the number of silicon wafer rows;
[0057] Based on the value of the remainder, determine whether to stop feeding.
[0058] On one hand, this application provides a control device for electroplating equipment, the control device for electroplating equipment comprising:
[0059] The first determining module is used to determine the motion parameter information of the horizontal axis and the vertical axis at the first and second points;
[0060] The first calculation module is used to calculate, based on the synchronization period and the motion parameter information of the horizontal axis, a first time set required for the horizontal axis to move from the first point to the second point, and based on the synchronization period and the motion parameter information of the vertical axis, a second time set required for the vertical axis to move from the first point to the second point, wherein the synchronization period is related to the duration required for the silicon wafer array to move from the first point to the second point;
[0061] The second determining module is used to determine the minimum travel time in the intersection of the first time set and the second time set;
[0062] The second calculation module is used to calculate the movement trajectories of the horizontal axis and the vertical axis based on the minimum movement time.
[0063] In the aforementioned synchronous control method and apparatus for electroplating equipment, by calculating the first time set of the horizontal axis and the second time set of the vertical axis respectively, the minimum movement time that simultaneously satisfies the movement time of the horizontal axis and the vertical axis can be obtained. Within the minimum movement time, the robotic arm can not only have a faster movement efficiency, but also ensure that the horizontal and vertical axes can move synchronously, thereby improving electroplating efficiency while ensuring that the robotic arm can move precisely. Attached Figure Description
[0064] To more clearly illustrate the technical solutions in the embodiments of this application or related technologies, the drawings used in the description of the embodiments of this application or related technologies will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.
[0065] Figure 1 A schematic diagram of an electroplating apparatus provided in one embodiment;
[0066] Figure 2 This is a schematic diagram of a silicon wafer provided in one embodiment;
[0067] Figure 3 This is a schematic diagram of the synchronous control method for the electroplating equipment provided in the first embodiment;
[0068] Figure 4 This is a schematic diagram of the synchronous control method for the electroplating equipment provided in the second embodiment;
[0069] Figure 5 This is a schematic diagram of the synchronous control method for the electroplating equipment provided in the third embodiment;
[0070] Figure 6 This is a schematic diagram of the synchronous control method for the electroplating equipment provided in the fourth embodiment;
[0071] Figure 7 This is a schematic diagram of multiple points provided in one embodiment;
[0072] Figure 8 This is a schematic diagram of the synchronous control method for the electroplating equipment provided in the fifth embodiment;
[0073] Figure 9 This is a schematic diagram of the synchronous control method for the electroplating equipment provided in the sixth embodiment;
[0074] Figure 10 This is a schematic diagram of the synchronous control method for the electroplating equipment provided in the seventh embodiment;
[0075] Figure 11 This is a schematic diagram of the synchronous control method for the electroplating equipment provided in the eighth embodiment;
[0076] Figure 12 This is a structural block diagram of the control device for an electroplating apparatus in one embodiment.
[0077] Explanation of reference numerals in the attached drawings: Electroplating equipment-10; Robotic arm-11; Conveyor roller-12; Sensor-13; Silicon wafer-20. Detailed Implementation
[0078] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.
[0079] In one embodiment, see Figure 1 An electroplating apparatus 10 is provided. The electroplating apparatus 10 may include a robotic arm 11 disposed on the upper part of the apparatus 10 and a horizontal conveying surface located at the lower part. The robotic arm 11 has a horizontal axis and a vertical axis, and the robotic arm 11 can move horizontally under the control of the horizontal axis and vertically under the control of the vertical axis. The horizontal conveying surface has parallel conveying rollers 12. During the electroplating process, an electroplating liquid is disposed at the horizontal conveying surface. (See also...) Figure 2 The silicon wafers 20 to be electroplated (from the current batch) move via conveyor rollers 12 in an array. Then, the robotic arm 11 can contact the silicon wafers 20 under the control of its horizontal and vertical axes. The robotic arm 11 is equipped with electrically conductive brushes; when the brushes contact the silicon wafers 20, electroplating can be performed on the wafers 20 using the brushes and electroplating liquid. After electroplating is complete, the robotic arm 11 can separate from the silicon wafers 20 under the control of its horizontal and vertical axes. It is understood that the above process can be repeated.
[0080] The electroplating equipment 10 also includes a controller, which can execute the control method of the electroplating equipment 10 provided in any of the embodiments and combinations thereof described below, thereby completing the electroplating process. Please refer to... Figure 3 In one embodiment, the control method for the electroplating equipment 10 may include the following steps:
[0081] Step S10: Determine the motion parameter information of the horizontal axis and the vertical axis at the first and second points.
[0082] Step S20: Based on the synchronization period and the motion parameter information of the horizontal axis, calculate the first time set required for the horizontal axis to move from the first point to the second point, and based on the synchronization period and the motion parameter information of the vertical axis, calculate the second time set required for the vertical axis to move from the first point to the second point. The synchronization period is related to the time required for the silicon wafer array to move from the first point to the second point.
[0083] Step S30: Determine the minimum movement time from the intersection of the first time set and the second time set.
[0084] Step S40: Calculate the movement trajectories of the horizontal axis and the vertical axis based on the minimum movement time.
[0085] In step S10, the distance between the first point (e.g., point B) and the second point (e.g., point C) can be the distance that the robotic arm 11 needs to move before contacting the silicon wafer 20. This embodiment does not limit the distance between the first point and the second point.
[0086] The motion parameter information may include, but is not limited to, the specific positions, initial velocities, and initial accelerations of the horizontal and vertical axes at the first and second points, respectively. This embodiment does not limit the specific motion parameter information of the horizontal and vertical axes.
[0087] In step S20, the synchronization period can be related to the time required for a complete silicon wafer array to move from the first point to the second point. Simultaneously, the synchronization period can also be related to the time achievable by each mechanical transmission component. Specifically, the time T required for the horizontal axis to move from the first point to the second point can be calculated first using the synchronization period and the motion parameters of the horizontal axis. X Then, based on T X And the synchronization period, to determine the first time set A = {T} X T X +500, T X +500*2, T X +500*3,···∞}。 Similarly, the synchronization period and motion parameters of the vertical axis can be used to calculate the time T required for the vertical axis to move from the first point to the second point. Z Furthermore, based on T Z And the synchronization period, to determine the second time set B = {T} Z T Z +500, T Z +500*2, T Z+500*3···∞}. It can be understood that when the synchronization period is other values, the first time set A and the second time set B increase to T. X and T Z The value can be changed. The 500 in the above set can refer to 500ms, which can be a number satisfied by all mechanical transmission components in this embodiment. It is understood that 500ms is only used as an example.
[0088] In step S30, the intersection (A∩B) of the first time set A and the second time set B can be calculated, and the minimum travel time T can be determined from this intersection. min .
[0089] In step S40, it can be understood that the minimum movement time can be the time required for the robotic arm 11 to move from the first point to the second point at the fastest speed when the horizontal and vertical axes move synchronously. At this time, the robotic arm 11 can have high movement efficiency in this movement trajectory.
[0090] In this embodiment, by calculating the first time set of the horizontal axis and the second time set of the vertical axis respectively, the minimum movement time that simultaneously satisfies the movement time of the horizontal axis and the movement time of the vertical axis can be obtained. Within the minimum movement time, the robotic arm 11 can not only have a faster movement efficiency, but also ensure that the horizontal axis and the vertical axis can move synchronously, thereby improving the electroplating efficiency and ensuring that the robotic arm 11 can move accurately.
[0091] In one embodiment, see Figure 4 Step S20 may include:
[0092] Step S200: Based on the first preset formula, the synchronization period, and the motion parameter information of the horizontal axis, calculate the initial horizontal path function of the horizontal axis during the process of moving from the first point to the second point.
[0093] Step S201: Based on the initial horizontal path function, calculate the velocity information of the horizontal axis. The velocity information of the horizontal axis is used to represent the velocity change of the horizontal axis.
[0094] Step S203: If the speed information of the horizontal axis satisfies the mechanical structure information of the horizontal axis, determine the first time set that satisfies the movement of the horizontal axis.
[0095] In step S200, the first preset formula may include a fifth-degree polynomial. As an example, a fifth-degree polynomial can be calculated using the following formula:
[0096] θ(t) = θ0 + a1(t-t0) + a2(t-t0) 2 +a3(t-t0)3 +a4(t-t0) 4 +a5(t-t0) 5
[0097] The synchronization period T = t1 - t0 can be calculated starting from 500 ms (for example, this 500 ms can be an initial value based on experience). The starting time point of the first point is t0, and the parameters in the motion parameter information of the horizontal axis can include position, velocity, and acceleration. Position, velocity, and acceleration can be expressed as:
[0098]
[0099] The termination time of the second point is t1, and its position, velocity, and acceleration can be expressed as:
[0100]
[0101] It is understandable that, at this point, the initial horizontal path function can be obtained by calculating the coefficients (e.g., a1, a2, a3, a4, a5) in the fifth-degree polynomial. In this embodiment, calculating the initial horizontal path function using a fifth-degree polynomial results in a smoother initial horizontal path function, which is more conducive to the control of the horizontal axis. Of course, in this embodiment, the first preset formula is not limited to a fifth-degree polynomial; for example, the first preset formula may also include a cubic polynomial, a seventh-degree polynomial, etc.
[0102] In step S201, the velocity information of the horizontal axis may include the horizontal axis's velocity, acceleration, and jerk. As an example, the velocity information of the horizontal axis can be calculated using the following formula:
[0103]
[0104] In step S203, it is necessary to determine whether the speed information of the horizontal axis conforms to the mechanical structure information of the horizontal axis. If the speed information of the horizontal axis conforms to the mechanical structure information of the horizontal axis, the time corresponding to the speed information can be considered to be T. X and using T X Proceed to subsequent steps. If the speed information of the horizontal axis does not match the mechanical structure information of the horizontal axis, it can be concluded that the horizontal axis cannot possess that speed, i.e., the speed is unreasonable. In this case, there is no need to determine the first time set.
[0105] Accordingly, please refer to Figure 5 Step S20 may also include:
[0106] Step S210: Based on the second preset formula, the synchronization period, and the motion parameter information of the vertical axis, calculate the initial vertical path function of the vertical axis during the process of moving from the first point to the second point.
[0107] Step S211: Based on the initial vertical path function, calculate the velocity information of the vertical axis. The velocity information of the vertical axis is used to represent the velocity change of the vertical axis.
[0108] Step S213: If the velocity information of the vertical axis satisfies the mechanical structure information of the vertical axis, determine the second time set that satisfies the movement of the vertical axis.
[0109] In step S210, the vertical axis moves in the vertical direction and is not affected by the position of the silicon wafer 20. Therefore, the second preset formula may include a linear function, etc., and this embodiment does not limit the specific form of the second preset formula.
[0110] Specifically, the position, velocity, and acceleration of the first point on the vertical axis can be used to calculate the coefficients in the second preset formula, starting from 500ms.
[0111] In step S211, the velocity information of the vertical axis may include the velocity, acceleration, and jerk of the vertical axis. Specifically, the velocity information of the vertical axis can be calculated using the coefficients in the second preset formula.
[0112] In step S213, it is necessary to determine whether the velocity information of the vertical axis conforms to the mechanical structure information of the vertical axis. If the velocity information of the vertical axis conforms to the mechanical structure information of the vertical axis, the time corresponding to the velocity information can be considered to be T. Z and using T Z Proceed to the next steps. If the velocity information of the vertical axis does not match the mechanical structure information of the vertical axis, it can be concluded that the vertical axis cannot have that velocity, i.e., the velocity is unreasonable. In this case, there is no need to determine the second time set.
[0113] In this embodiment, by calculating the speed information of the horizontal axis and the vertical axis respectively, it is determined whether the calculated specific speed values meet the mechanical structure information, thus avoiding unreasonable minimum movement time.
[0114] In one possible example, the velocity information of the horizontal axis includes parameter values for multiple velocity parameters of the horizontal axis. The velocity parameters may include multiple parameters used to represent changes in motion. Specifically, the velocity information of the horizontal axis may include multiple velocity values, acceleration values, and jerk values. Step S201 may be followed by:
[0115] Step S202: For each velocity parameter on the horizontal axis, determine the corresponding maximum value.
[0116] Step S2020: If the maximum value of each speed parameter of the horizontal axis is not greater than the corresponding mechanical structure speed information of the horizontal axis, determine that the speed information of the horizontal axis satisfies the mechanical structure speed value of the horizontal axis.
[0117] Similarly, the velocity information of the vertical axis includes the parameter values of multiple velocity parameters of the vertical axis. Specifically, the velocity information of the vertical axis can include multiple velocity values, acceleration values, and jerk values.
[0118] Step S211 may be followed by:
[0119] Step S212: For each velocity parameter on the vertical axis, determine the corresponding maximum value.
[0120] Step S2120: If the maximum value of each velocity parameter of the vertical axis is not greater than the corresponding mechanical structure velocity information of the vertical axis, determine that the velocity information of the vertical axis satisfies the mechanical structure velocity value of the vertical axis.
[0121] In steps S202 and S212, as an example, the values of each velocity parameter in the horizontal and vertical axes can be sorted. Then, the maximum value is determined for each parameter. For example, the maximum velocity, maximum acceleration, and maximum jerk of the horizontal axis can be determined. Alternatively, the maximum velocity, maximum acceleration, and maximum jerk of the vertical axis can be determined.
[0122] In steps S2020 and S2120, it can be determined whether the maximum speed, maximum acceleration, and maximum jerk of the horizontal and vertical axes meet the mechanical structure speed information. It can be understood that the mechanical structure speed information may include the maximum speed, maximum acceleration, and maximum jerk that the mechanical structure can withstand.
[0123] In this practical example, by determining whether the maximum value of each speed parameter is not greater than the corresponding mechanical structure speed information, it is possible to quickly determine whether the calculated speed parameters are reasonable.
[0124] In another possible example, after step S201, the following may be included:
[0125] Step S2010: If the speed information of the horizontal axis does not meet the mechanical structure information of the horizontal axis, modify the synchronization period.
[0126] Step S2011: Based on the modified synchronization period, the first preset formula, and the motion parameter information of the horizontal axis, recalculate the initial horizontal path function of the horizontal axis and the corresponding speed information until the speed information of the horizontal axis satisfies the mechanical structure information of the horizontal axis.
[0127] Accordingly, after step S211, the following may be included:
[0128] Step S2110: If the speed information of the vertical axis does not meet the mechanical structure information of the vertical axis, modify the synchronization period.
[0129] Step S2111: Based on the modified synchronization period, the second preset formula, and the motion parameter information of the vertical axis, recalculate the initial vertical path function of the vertical axis and the corresponding velocity information until the velocity information of the vertical axis satisfies the mechanical structure information of the vertical axis.
[0130] In steps S2010 and S2110, as an example, the synchronization period can be modified by adding a new synchronization period (e.g., adding 500ms) to the current synchronization period. In this case, the values of the current synchronization period and the newly added synchronization period can be the same.
[0131] This example does not limit the specific form in which the synchronization period can be modified. As an example, the synchronization period can also be modified by assigning different coefficients to the current synchronization period.
[0132] In steps S2011 and S2111, the initial horizontal path function and the initial vertical path function can be repeatedly calculated based on the modified synchronization period until the speed information of the vertical axis and the horizontal axis meets the mechanical structure information.
[0133] In this example, by modifying the synchronization cycle, new initial horizontal path functions and initial vertical path functions are obtained, which allows for the rapid calculation of the velocity information of the vertical and horizontal axes that satisfy the mechanical structure information.
[0134] In one embodiment, see Figure 6 Step S40 may include:
[0135] Step S60: In the horizontal direction, when the foremost point of the silicon wafer array is at the fourth point, control the robotic arm 11 to move along a trajectory, with the fourth point located between the first and second points.
[0136] Please see Figure 2Silicon wafers 20 are horizontally conveyed into the pre-processing area in a matrix (M×N) without stopping the horizontal conveyor shaft. Sensors 13 record the position of each silicon wafer 20 on the horizontal conveyor shaft and count the batches. After calculation, the horizontal and vertical axes move along a trajectory, simultaneously contacting the silicon wafers 20 with appropriate motion parameters. After the required reaction time is completed, the vertical and horizontal axes are sequentially lifted, returning to the first point (starting point). This process is repeated. Here, M is the number of tracks (e.g., number of columns), and N is the number of silicon wafers 20 arranged at equal intervals along the track's direction of travel (e.g., number of rows). Each track has a sensor 13 installed at a distance L (the distance between A and B) before the silicon wafer 20 enters the pre-processing tank (first point). These sensors record the timestamp and position value of the silicon wafer 20 upon arrival, with a total of M sensors, numbered S1, S2, ..., S... M mark.
[0137] Silicon wafers 20 can be arranged neatly and at equal intervals, ensuring that silicon wafers 20 are present at every point in the matrix-style incoming material (M×N). The length and width of silicon wafers 20 are respectively based on L... w L d Marking. After the electroplating equipment 10 starts, the count value C of silicon wafer 20 is cleared to zero, the synchronization mark bit is reset, and the horizontal synchronization position set P corresponding to column M silicon wafers is set. X Reset to zero.
[0138] Please see Figure 7 When the silicon wafer array is at the fourth point (shown as D), it indicates that the silicon wafer array is about to undergo an electroplating process. At this time, the robotic arm 11 can be controlled to move along the horizontal and vertical axes. It can be understood that in this step, the robotic arm 11 needs to move synchronously from the first point to the second point along with the silicon wafer array. Specifically, the robotic arm 11 can move horizontally under the control of the horizontal axis and vertically (downward) under the control of the vertical axis. Furthermore, the silicon wafer array can reach the second point simultaneously with the robotic arm 11, and the brush on the robotic arm 11 can contact the upper surface of the silicon wafer array at the second point.
[0139] In this embodiment, the fourth point (shown as point D) and the first point (shown as point B) can be located at different positions, thereby making the synchronous control method of the electroplating equipment 10 provided in this embodiment easy to implement.
[0140] In one possible example, please see Figure 8 Before step S60, the following may be included:
[0141] Step S50: When the silicon wafer array is located at the third point, determine the positions of multiple silicon wafers 20 located in the target row and generate a position set. The first point is located between the third point and the second point, and the distance between the fourth point and the third point is greater than the length of the silicon wafer matrix.
[0142] Step S51: Determine the maximum and minimum values from multiple location sets.
[0143] Step S52: Calculate the difference between the maximum and minimum values.
[0144] Step S53: When the difference is not greater than the error value, determine that the multiple silicon wafers 20 located in the target row are in normal operating condition.
[0145] In step S50, please refer to Figure 1 and Figure 7 When the silicon wafer array is located at the third point (point A), it indicates that the silicon wafer array has entered the pretreatment tank of the electroplating equipment 10. As an example, a sensor 13 (e.g., a photoelectric sensor 13) can be placed at the third point. When the signal of sensor 13 changes from a first level (e.g., low level) to a second level (e.g., high level), and the signal of sensor 13 can maintain the second level for a certain duration, it can be confirmed that the silicon wafer array is located at the third point. If the signal of sensor 13 does not maintain the second level for a certain duration, it can be considered that sensor 13 has experienced false triggering, interference, or other issues. As an example, if the signal of sensor 13 can maintain the second level for 500ms, it can be confirmed that the silicon wafer 20 is located at the third point. Furthermore, the time it takes for a silicon wafer 20 to pass through sensor 13 can be 500ms.
[0146] When the signal from sensor 13 changes from the first level to the second level, the timestamp t of the silicon wafer array and the horizontal movement axis position value p at that moment can be recorded. All timestamps are set T. X and the set of position values P X They are {t1, t2, ..., t} M} and {p1, p2, ..., p M When the signal from sensor 13 can be maintained at the second level for a certain duration, the count value C on silicon wafer 20 is incremented by 1. When the signal from sensor 13 does not maintain the second level for a certain duration, the timestamp and position value corresponding to the signal from sensor 13 are deleted.
[0147] Then, based on the number of detections by sensor 13 and the rotational speed of conveyor roller 12, the current arrangement of silicon wafers 20 can be simulated, thus determining the time it takes for the first group of silicon wafers to reach the fourth position. Then, robotic arm 11 will move from the first position along a trajectory ( Figure 7 The wafers move to the second point (as shown by the arc between points B and C) to synchronize with the first group of silicon wafer matrices. In this embodiment, the distance between the fourth and third points is greater than the length of the silicon wafer matrix, ensuring that when the current group of silicon wafer matrices is being electroplated, the next group has not yet reached the fourth point, thus guaranteeing that the electroplating process of each group of silicon wafer matrices is not affected.
[0148] In steps S51 to S53, silicon wafers 20 can be transferred on the horizontal conveyor roller 12 in a matrix form. It is understood that multiple silicon wafers 20 located in the same row may not arrive completely synchronously. Therefore, the set of positions of multiple silicon wafers 20 located in the same row can be obtained and sorted. For example, the set of positions of multiple silicon wafers 20 located in the target row can be represented as {p min p min+1 ···p max This embodiment does not limit the specific number of rows in the target row. For example, the target row can be the first row of the silicon wafer array, or any row.
[0149] The maximum schedule gap for multiple silicon wafers 20 located in the target row can then be obtained by determining the difference between the maximum and minimum values. The difference Δp between the maximum and minimum values can be calculated using the following formula:
[0150] Δp=p max -p min
[0151] The robotic arm 11 is equipped with a brush for contacting the silicon wafer 20. It can be understood that the brush length L... f Less than 20mm in length L of silicon wafer w Therefore, the error value can be the allowable error value introduced by the brush size. As an example, the error value Δd can be calculated using the following formula:
[0152] Δd=(L w -L f ) / 2
[0153] When the difference is not greater than the error value (i.e., Δp < Δd), it can be determined that the silicon wafers 20 in the same row are correctly positioned and are in normal operating condition. Subsequent steps can then be performed. It is understood that this embodiment does not limit the calculation formula for the error value Δd. When the silicon wafer array contains different numbers of silicon wafers 20 (e.g., the silicon wafer array contains one silicon wafer 20), the calculation formula for the error value Δd can be changed (i.e., the calculation formula for the error value Δd does not need to be divided by 2).
[0154] In addition, step S52 may also include:
[0155] Step S54: When the difference is greater than the error value, remove the maximum value from the location set and mark the track where the silicon wafer 20 corresponding to the maximum value is located.
[0156] Step S55: Determine the new maximum value in the set of positions.
[0157] Step S56: Calculate the difference between the new maximum and minimum values until the difference is no greater than the error value.
[0158] In steps S54 to S56, when the difference is greater than the error value (i.e., Δp ≥ Δd), the current maximum value p of the elements in the position set can be removed. max And determine the new maximum value p max-1 Then, p can be calculated. max-1 With p min The difference Δp1 is compared with Δd again. This process is repeated recursively until the difference Δpn is less than Δd.
[0159] In addition, the maximum value p can be marked. max The feeding of the corresponding silicon wafer 20 track will be stopped. Of course, if the detected difference Δp is greater than the preset difference, it is considered that the feeding progress of silicon wafer 20 in the same row is too different, and it needs to be marked and manual intervention is required later.
[0160] In this example, by calculating the maximum progress gap of multiple silicon wafers 20 located in the same row, it can be determined whether the brush of the robotic arm 11 can cover all silicon wafers 20, thereby avoiding the brush from getting wet from contact with the electroplating liquid.
[0161] In another possible example, see Figure 9 Step S53 may include:
[0162] Step S57: Determine the number of incoming rows of the silicon wafer array.
[0163] Step S570: When the number of incoming rows of silicon wafer array reaches a preset value, control the robotic arm 11 to be in a ready state.
[0164] In step S57, the number N of incoming material rows of the silicon wafer array can be determined by sensor 13.
[0165] In step S570, when the number of incoming rows of the silicon wafer array reaches a preset value, it indicates that the silicon wafer array quantity processing standard has been met, and the robotic arm 11 can be controlled to be in a ready state. As an example, the preset value may include 5, 10, 15, 50, etc. This embodiment does not limit the specific preset value.
[0166] For further details, please refer to Figure 10 Furthermore, after step S57, the following may also be included:
[0167] Step S58: Calculate the synchronization position of the horizontal axis and the synchronization position of the vertical axis.
[0168] Step S580: Calculate the remainder obtained by dividing the count value of silicon wafer 20 by the number of incoming material rows.
[0169] Step S581: When the remainder is the first target value, send the synchronization position of the horizontal axis and the synchronization position of the vertical axis to the intermediate buffer.
[0170] Step S582: When the remainder is the second target value, determine that the number of incoming rows of silicon wafer 20 has reached the preset value.
[0171] In step S58, as an example, the first point can be the origin of the horizontal and vertical axes. For example, the position of the first point can be recorded as 0.
[0172] Synchronous position P of the horizontal axis X The following formula can be used to calculate:
[0173] P X =p max +L+θ X
[0174] Where, p max θ can be the maximum position among multiple silicon wafers 20 located in the same row, L can be the distance between the third position and the first position, and θ can be the distance between the third position and the first position. X The synchronization distance between the horizontal axis and the silicon wafer 20 can be defined as the distance from the first point to the second point.
[0175] Synchronous position P of the vertical axis Z The following formula can be used to calculate:
[0176] P Z =θ Z
[0177] Wherein, the vertical axis synchronous position is a fixed position point, θ Z The vertical axis is the synchronous distance between the silicon wafer 20 and the silicon wafer 20, that is, the vertical movement distance.
[0178] In steps S580 to S582, the count value C of silicon wafer 20 can be divided by the number of incoming rows N. As an example, when the remainder is 1 (the first target value), it indicates that one row of material has arrived, and the synchronization position P of the horizontal axis is adjusted. X And the synchronous position P of the vertical axis Z The data is transferred to the intermediate buffer. Then, the count value C of silicon wafer 20 is divided by the number of incoming rows N to obtain remainders of 2, 3, etc. This process is repeated until the remainder is 0 (the second target value). When the remainder is 0, it indicates that N rows of material have arrived, meeting the quantity processing standard, and the robotic arm 11 can be put into a ready state. Specifically, the intermediate buffer value can be transferred to the synchronization position program of the electroplating equipment 10, marking the imminent start of synchronous operation.
[0179] In one embodiment, the synchronous control method for the electroplating equipment 10 further includes:
[0180] Step S70: Obtain the return time of the robotic arm 11. The return time is used to indicate the time it takes for the robotic arm 11 to separate from the silicon wafer array and return to the first point after the silicon wafer array electroplating process is completed.
[0181] Accordingly, step S40 is followed by:
[0182] Step S80: When the front end of the silicon wafer array is at the fifth point, first control the vertical axis to move the robotic arm 11 upward, and then control the horizontal axis to move the robotic arm 11 towards the first point, so that the robotic arm 11 returns to the first point within the return time. The second point is located between the first point and the fifth point.
[0183] In step S70, after electroplating the previous set of silicon wafers, the robotic arm 11 needs to return to the first position and wait for the next set of silicon wafers. At this time, the return time can be used to represent the time required for the robotic arm 11 to return to the first position. This embodiment does not limit the specific value of the return time. As an example, the return time can be 3s, 5s, 8s, etc.
[0184] In step S80, the fifth point can be Figure 7 Point E in the array. At this point, between the second point (point C) and the fifth point (point E), the robotic arm 11 can move forward synchronously with the silicon wafer array.
[0185] When the robotic arm 11 and the silicon wafer array advance to the fifth position, the robotic arm 11 can separate from the silicon wafer array. At this time, the robotic arm 11 is first moved upward by controlling the vertical axis. After a preset time (e.g., one second), the robotic arm 11 is moved towards the first position by controlling the horizontal axis, so that the robotic arm 11 returns to the first position within the return time.
[0186] Specifically, step S70 may include:
[0187] Step S71: Determine the return time based on the spacing between two adjacent silicon wafer arrays, the length of the silicon wafer matrix, and the transmission speed of the silicon wafer array.
[0188] As an example, the spacing between two adjacent silicon wafer arrays can be the distance between the last silicon wafer 20 in the first silicon wafer array near the edge of the second silicon wafer array and the first silicon wafer 20 in the second silicon wafer array near the edge of the first silicon wafer array.
[0189] When calculating the return time, the sum of the spacing between two adjacent silicon wafer arrays and the length of the silicon wafer matrix can be calculated first. Then, the quotient of this calculation result and the transmission speed of the silicon wafer array (e.g., the rotational speed of the conveyor roller 12) can be determined. The return time can be less than this calculation result, thereby ensuring that the robotic arm 11 returns to the first position before the next silicon wafer array reaches the second position (or the fourth position).
[0190] Afterwards, we can wait for the information of the silicon wafer 20 reaching the first point in the next cycle and / or the synchronization position of the silicon wafer 20 in the next cycle, and then control the robotic arm 11 to move along the movement trajectory again (as shown in step S60), and repeat this cycle.
[0191] In this embodiment, the vertical axis can be raised first, and then the horizontal axis can be controlled to retract to end the electroplating process, thereby avoiding collisions with the robotic arm 11.
[0192] In one embodiment, see Figure 11 Synchronous control methods for electroplating equipment also include:
[0193] Step S90: Upon receiving a stop signal, determine the silicon wafer count value and the number of silicon wafer rows.
[0194] Step S91: Calculate the remainder obtained by dividing the silicon wafer count by the number of silicon wafer rows.
[0195] Step S92: Based on the remainder value, determine whether to stop feeding.
[0196] In steps S90 to S92, after receiving the stop signal, the remainder of the silicon wafer 20 count value C divided by the number of rows N of silicon wafers 20 is calculated. If the remainder is 0, the upstream material feeder can be notified to stop feeding, and the robotic arm 11 will stop operating after completing the last batch. If the remainder is not 0, feeding can continue, and the silicon wafer 20 count value C is incremented until the remainder is 0.
[0197] Specifically, the stop signal can be issued manually by the operator or automatically by the electroplating equipment 10 based on preset conditions. Then, by calculating the remainder when the silicon wafer count C is divided by the number of rows N of silicon wafers 20, it is determined whether the current batch of silicon wafers 20 is fully electroplated. If the remainder is 0, it can be confirmed that electroplating is complete. In this case, the upstream material feeder can be notified to stop feeding to avoid waste or causing confusion in subsequent processing. Simultaneously, the robotic arm 11 should also stop operating after completing the processing of the current batch, awaiting the next instruction or batch. If the remainder is not 0, it indicates that the current batch is incomplete, and there are remaining silicon wafers 20 that need to be processed. In this case, the electroplating equipment 10 can continue to allow upstream material feed to replenish the remaining number of silicon wafers 20. Meanwhile, the silicon wafer count C should continue to accumulate until the next complete batch is reached (i.e., the remainder is 0 again).
[0198] In this embodiment, by calculating the remainder when the count value C of silicon wafer 20 is divided by the number of rows N of silicon wafer 20, it is ensured that the processing of each batch of silicon wafer 20 is complete and accurate, thereby improving production efficiency and quality and reducing waste and errors.
[0199] It should be understood that although the steps in the flowcharts of the embodiments described above are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the embodiments described above may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages of other steps.
[0200] Based on the same inventive concept, please refer to Figure 12 This application also provides a synchronous control device for electroplating equipment 10 to implement the control method of electroplating equipment 10 described above. The solution provided by this device is similar to the solution described in the above method. Therefore, the specific limitations of one or more control device embodiments of electroplating equipment 10 provided below can be found in the limitations of the control method of electroplating equipment 10 above, and will not be repeated here.
[0201] The control device of the electroplating equipment 10 includes: a first determining module, a first calculating module, a second determining module, and a second calculating module.
[0202] The first determining module is used to determine the motion parameter information of the horizontal axis and the vertical axis at the first and second points.
[0203] The first calculation module is used to calculate, based on the synchronization period and the motion parameter information of the horizontal axis, a first time set required for the horizontal axis to move from the first point to the second point, and based on the synchronization period and the motion parameter information of the vertical axis, a second time set required for the vertical axis to move from the first point to the second point. The synchronization period is related to the time required for the silicon wafer array to move from the first point to the second point.
[0204] The second determining module is used to determine the minimum movement time at the intersection of the first time set and the second time set.
[0205] The second calculation module is used to calculate the movement trajectory of the horizontal axis and the vertical axis respectively based on the minimum movement time.
[0206] In one embodiment, the first calculation module is further configured to: calculate the initial horizontal path function of the horizontal axis during its movement from the first point to the second point, based on a first preset formula, a synchronization period, and motion parameter information of the horizontal axis; calculate the velocity information of the horizontal axis based on the initial horizontal path function, the velocity information of the horizontal axis being used to represent the velocity change of the horizontal axis; determine a first time set satisfying the horizontal axis movement if the velocity information of the horizontal axis satisfies the mechanical structure information of the horizontal axis; calculate the initial vertical path function of the vertical axis during its movement from the first point to the second point, based on a second preset formula, a synchronization period, and motion parameter information of the vertical axis; calculate the velocity information of the vertical axis based on the initial vertical path function, the velocity information of the vertical axis being used to represent the velocity change of the vertical axis; and determine a second time set satisfying the vertical axis movement if the velocity information of the vertical axis satisfies the mechanical structure information of the vertical axis.
[0207] In one embodiment, the first calculation module is further configured to: determine the corresponding maximum value for each speed parameter of the horizontal axis; and determine that the speed information of the horizontal axis satisfies the mechanical structure speed value of the horizontal axis if the maximum value of each speed parameter of the horizontal axis is not greater than the mechanical structure speed information of the corresponding horizontal axis; determine the corresponding maximum value for each speed parameter of the vertical axis; and determine that the speed information of the vertical axis satisfies the mechanical structure speed value of the vertical axis if the maximum value of each speed parameter of the vertical axis is not greater than the mechanical structure speed information of the corresponding vertical axis.
[0208] In one embodiment, the first calculation module is further configured to: determine the corresponding maximum value for each speed parameter of the horizontal axis; and determine that the speed information of the horizontal axis satisfies the mechanical structure speed value of the horizontal axis if the maximum value of each speed parameter of the horizontal axis is not greater than the mechanical structure speed information of the corresponding horizontal axis; determine the corresponding maximum value for each speed parameter of the vertical axis; and determine that the speed information of the vertical axis satisfies the mechanical structure speed value of the vertical axis if the maximum value of each speed parameter of the vertical axis is not greater than the mechanical structure speed information of the corresponding vertical axis.
[0209] In one embodiment, the first calculation module is further configured to modify the synchronization period if the speed information of the horizontal axis does not meet the mechanical structure information of the horizontal axis; based on the modified synchronization period, the first preset formula, and the motion parameter information of the horizontal axis, recalculate the initial horizontal path function of the horizontal axis and the corresponding speed information until the speed information of the horizontal axis meets the mechanical structure information of the horizontal axis; if the speed information of the vertical axis does not meet the mechanical structure information of the vertical axis, modify the synchronization period; based on the modified synchronization period, the second preset formula, and the motion parameter information of the vertical axis, recalculate the initial vertical path function of the vertical axis and the corresponding speed information until the speed information of the vertical axis meets the mechanical structure information of the horizontal axis.
[0210] In one embodiment, the first calculation module is further configured to, when the speed information of the horizontal axis does not meet the mechanical structure information of the horizontal axis, increase the current synchronization period by a preset value to obtain the modified synchronization period; and when the speed information of the vertical axis does not meet the mechanical structure information of the vertical axis, increase the current synchronization period by a preset value to obtain the modified synchronization period.
[0211] In one embodiment, the first computing module is also used to control the robotic arm to move along a trajectory in the horizontal direction when the foremost point of the silicon wafer array is located at the fourth point, the fourth point being located between the first point and the second point.
[0212] In one embodiment, the first calculation module is further configured to determine the positions of multiple silicon wafers located in the target row when the silicon wafer array is located at the third point, generate a set of positions, wherein the first point is located between the third point and the fourth point, and the distance between the fourth point and the third point is greater than the length of the silicon wafer matrix; determine the maximum and minimum values in the set of multiple positions; calculate the difference between the maximum and the minimum values; and determine that the multiple silicon wafers located in the target row are in normal operating condition when the difference is not greater than the error value.
[0213] In one embodiment, the first calculation module is further configured to remove the maximum value from the location set when the difference is greater than the error value, and mark the track where the silicon wafer corresponding to the maximum value is located; determine a new maximum value in the location set; calculate the difference between the new maximum value and the minimum value until the difference is not greater than the error value.
[0214] In one embodiment, the first calculation module is further used to determine the number of incoming rows of the silicon wafer array; when the number of incoming rows of the silicon wafer array reaches a preset value, the robotic arm is controlled to be in a ready state.
[0215] In one embodiment, the synchronization control device of the electroplating equipment 10 further includes a return acquisition module and a return control module. The return acquisition module is used to acquire the return time of the robotic arm, which represents the time it takes for the robotic arm to separate from the silicon wafer array and return to the first position after the silicon wafer array electroplating process is completed. The return control module is used to, when the foremost point of the silicon wafer array is at the fifth position, first control the vertical axis to move the robotic arm upward, and then control the horizontal axis to move the robotic arm closer to the first position, so that the robotic arm returns to the first position within the return time, and the second position is located between the first and fifth positions.
[0216] In one embodiment, the return acquisition module is further configured to determine the return duration based on the spacing between two adjacent silicon wafer arrays, the length of the silicon wafer matrix, and the transmission speed of the silicon wafer array.
[0217] In one embodiment, the control device of the electroplating equipment 10 further includes a stop module. The stop module is used to, upon receiving a stop signal, determine the silicon wafer count value and the number of silicon wafer rows; calculate the remainder obtained by dividing the silicon wafer count value by the number of silicon wafer rows; and, based on the remainder value, determine whether to stop feeding.
[0218] Each module in the control device of the electroplating equipment 10 described above can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in or independent of the processor in a computer device in hardware form, or stored in the memory of a computer device in software form, so that the processor can call and execute the operations corresponding to each module.
[0219] Furthermore, the control device of the electroplating equipment 10 described above can also execute other control methods for electroplating equipment 10 as described in this application. In this case, the control device of the electroplating equipment 10 may include a first module, a second module, etc., to execute other steps.
[0220] In one embodiment, a computer device is also provided, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to implement the steps in the above method embodiments.
[0221] In one embodiment, a computer-readable storage medium is provided having a computer program stored thereon that, when executed by a processor, implements the steps in the above method embodiments.
[0222] In one embodiment, a computer program product is provided, including a computer program that, when executed by a processor, implements the steps in the above method embodiments.
[0223] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium, and when executed, it can include the processes of the embodiments of the above methods. Any references to memory, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile memory and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM). The databases involved in the embodiments provided in this application may include at least one type of relational database and non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the embodiments provided in this application may be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, artificial intelligence (AI) processors, etc., and are not limited to these.
[0224] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this application.
[0225] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.
Claims
1. A synchronous control method for electroplating equipment, characterized in that, The electroplating equipment includes a robotic arm for electroplating a silicon wafer array. The robotic arm moves under the control of a horizontal axis and a vertical axis. The horizontal axis controls the robotic arm's movement in the horizontal direction, and the vertical axis controls the robotic arm's movement in the vertical direction. The synchronous control method of the electroplating equipment includes: Determine the motion parameter information of the horizontal axis and the vertical axis at the first point and the second point; Based on the synchronization period and the motion parameter information of the horizontal axis, a first time set required for the horizontal axis to move from the first point to the second point is calculated, and based on the synchronization period and the motion parameter information of the vertical axis, a second time set required for the vertical axis to move from the first point to the second point is calculated. The synchronization period is related to the duration required for the silicon wafer array to move from the first point to the second point. The minimum travel time is determined from the intersection of the first time set and the second time set; Based on the minimum movement time, the movement trajectories of the horizontal axis and the vertical axis are calculated respectively.
2. The synchronous control method for electroplating equipment according to claim 1, characterized in that, The calculation of a first time set required for the horizontal axis to move from the first point to the second point, based on the synchronization period and the motion parameter information of the horizontal axis, and the calculation of a second time set required for the vertical axis to move from the first point to the second point, based on the synchronization period and the motion parameter information of the vertical axis, includes: Based on the first preset formula, the synchronization period, and the motion parameter information of the horizontal axis, the initial horizontal path function of the horizontal axis during the process of moving from the first point to the second point is calculated; Based on the initial horizontal path function, the velocity information of the horizontal axis is calculated, and the velocity information of the horizontal axis is used to represent the velocity change of the horizontal axis. If the speed information of the horizontal axis satisfies the mechanical structure information of the horizontal axis, a first time set that satisfies the movement of the horizontal axis is determined; Based on the second preset formula, the synchronization period, and the motion parameter information of the vertical axis, the initial vertical path function of the vertical axis during the process of moving from the first point to the second point is calculated; Based on the initial vertical path function, the velocity information of the vertical axis is calculated, and the velocity information of the vertical axis is used to represent the velocity change of the vertical axis; If the velocity information of the vertical axis satisfies the mechanical structure information of the vertical axis, a second time set that satisfies the movement of the vertical axis is determined.
3. The synchronous control method for electroplating equipment according to claim 2, characterized in that, The velocity information of the horizontal axis includes the parameter values of multiple velocity parameters of the horizontal axis, and the velocity information of the vertical axis includes the parameter values of multiple velocity parameters of the vertical axis, wherein the velocity parameters include multiple parameters representing changes in motion; After calculating the velocity information of the horizontal axis based on the initial horizontal path function, the process includes: For each velocity parameter of the horizontal axis, determine the corresponding maximum value; If the maximum value of each speed parameter of the horizontal axis is not greater than the corresponding mechanical structure speed information of the horizontal axis, it is determined that the speed information of the horizontal axis satisfies the mechanical structure speed value of the horizontal axis. After calculating the velocity information of the vertical axis based on the initial vertical path function, the process includes: For each velocity parameter of the vertical axis, determine the corresponding maximum value; If the maximum value of each velocity parameter of the vertical axis is not greater than the corresponding mechanical structure velocity information of the vertical axis, it is determined that the velocity information of the vertical axis satisfies the mechanical structure velocity value of the vertical axis.
4. The synchronous control method for electroplating equipment according to claim 2, characterized in that, The step of calculating the velocity information of the horizontal axis based on the initial horizontal path function, whereby the velocity information of the horizontal axis is used to represent the velocity change of the horizontal axis, includes: If the speed information of the horizontal axis does not meet the mechanical structure information of the horizontal axis, the synchronization period is modified. Based on the modified synchronization period, the first preset formula, and the motion parameter information of the horizontal axis, the initial horizontal path function of the horizontal axis and the corresponding speed information are calculated again until the speed information of the horizontal axis satisfies the mechanical structure information of the horizontal axis. Based on the initial vertical path function, the velocity information of the vertical axis is calculated. This velocity information, used to represent the velocity changes of the vertical axis, includes: If the speed information of the vertical axis does not meet the mechanical structure information of the vertical axis, the synchronization period is modified. Based on the modified synchronization period, the second preset formula, and the motion parameter information of the vertical axis, the initial vertical path function of the vertical axis and the corresponding velocity information are calculated again; until the velocity information of the vertical axis satisfies the mechanical structure information of the horizontal axis.
5. The synchronous control method for electroplating equipment according to claim 4, characterized in that, When the speed information of the horizontal axis does not meet the mechanical structure information of the horizontal axis, modifying the synchronization period includes: If the speed information of the horizontal axis does not meet the mechanical structure information of the horizontal axis, the current synchronization period is increased by a preset value to obtain the modified synchronization period; When the speed information of the vertical axis does not meet the mechanical structure information of the vertical axis, modifying the synchronization period includes: If the speed information of the vertical axis does not meet the mechanical structure information of the vertical axis, the current synchronization period is increased by a preset value to obtain the modified synchronization period.
6. The synchronous control method for electroplating equipment according to claim 1, characterized in that, After calculating the movement trajectories of the horizontal axis and the vertical axis based on the minimum movement time, the process includes: In the horizontal direction, when the foremost point of the silicon wafer array is at the fourth point, the robotic arm is controlled to move along the movement trajectory, the fourth point being located between the first point and the second point.
7. The synchronous control method for electroplating equipment according to claim 6, characterized in that, The foremost point of the silicon wafer array is located at the fourth position. Before controlling the robotic arm to move along the movement trajectory, the following steps are included: When the silicon wafer array is located at the third point, the positions of multiple silicon wafers located in the target row are determined, and a position set is generated. The first point is located between the third point and the fourth point, and the distance between the fourth point and the third point is greater than the length of the silicon wafer matrix. Determine the maximum and minimum values from the multiple sets of locations; Calculate the difference between the maximum value and the minimum value; When the difference is not greater than the error value, the plurality of silicon wafers located in the target row are determined to be in normal operating condition.
8. The synchronous control method for electroplating equipment according to claim 7, characterized in that, After calculating the difference between the maximum value and the minimum value, the process includes: When the difference is greater than the error value, the maximum value is removed from the location set, and the track where the silicon wafer corresponding to the maximum value is located is marked; Determine a new maximum value from the set of positions; Calculate the difference between the new maximum value and the minimum value until the difference is no greater than the error value.
9. The synchronous control method for electroplating equipment according to claim 7, characterized in that, After determining that the plurality of silicon wafers located in the target row are in normal operating condition when the difference is not greater than the error value, Determine the number of incoming rows in the silicon wafer array; When the number of incoming rows of the silicon wafer array reaches a preset value, the robotic arm is controlled to be in a ready state.
10. The synchronous control method for electroplating equipment according to claim 1, characterized in that, The synchronous control method for the electroplating equipment also includes: The return time of the robotic arm is obtained, and the return time is used to represent the time it takes for the robotic arm to separate from the silicon wafer array and return to the first point after the silicon wafer array electroplating process is completed; After calculating the movement trajectories of the horizontal axis and the vertical axis based on the minimum movement time, the process includes: When the foremost point of the silicon wafer array is at the fifth position, the robotic arm is first moved upward by controlling the vertical axis, and then moved towards the first position by controlling the horizontal axis, so that the robotic arm returns to the first position within the return time. The second position is located between the first position and the fifth position.
11. The synchronous control method for electroplating equipment according to claim 10, characterized in that, The process of obtaining the return time of the robotic arm includes: The return time is determined based on the spacing between two adjacent silicon wafer arrays, the length of the silicon wafer matrix, and the transmission speed of the silicon wafer array.
12. The synchronous control method for electroplating equipment according to claim 1, characterized in that, The synchronous control method for the electroplating equipment also includes: Upon receiving a stop signal, determine the wafer count value and the number of wafer rows; Calculate the remainder obtained by dividing the silicon wafer count by the number of silicon wafer rows; Based on the value of the remainder, determine whether to stop feeding.
13. A control device for electroplating equipment, characterized in that, The control device for the electroplating equipment includes: The first determining module is used to determine the motion parameter information of the horizontal axis and the vertical axis at the first and second points; The first calculation module is used to calculate, based on the synchronization period and the motion parameter information of the horizontal axis, a first time set required for the horizontal axis to move from the first point to the second point, and based on the synchronization period and the motion parameter information of the vertical axis, a second time set required for the vertical axis to move from the first point to the second point, wherein the synchronization period is related to the duration required for the silicon wafer array to move from the first point to the second point; The second determining module is used to determine the minimum travel time in the intersection of the first time set and the second time set; The second calculation module is used to calculate the movement trajectories of the horizontal axis and the vertical axis based on the minimum movement time.
