A MEMS getter pump based on tgv filling, method of manufacture and method of activation

Abstract

The application discloses a TGV filling-based MEMS getter pump, a preparation method and an activation method, and belongs to the technical field of getter pump design and manufacturing. The getter pump comprises a first glass substrate, at least one through hole penetrating through the first glass substrate, getter material filled in the through hole and used for adsorbing residual gas in a vacuum cavity, a second glass substrate located on the first glass substrate, and a heating circuit arranged between the second glass substrate and the first glass substrate and used for heating the getter material in the through hole. By replacing a traditional silicon substrate with a glass substrate with low thermal conductivity, a through hole array is formed as a three-dimensional bearing framework of the getter by using a TGV technology, low activation power consumption, high thermal efficiency, high getter capacity and high integration with a wafer-level packaging process are realized, and technical problems of high activation power consumption, serious thermal crosstalk and limited effective getter specific surface area of an existing silicon-based MEMS getter pump are solved.

Description

Technical Field

[0001] This application belongs to the field of getter pump design and manufacturing technology, and specifically relates to a MEMS getter pump based on TGV filling, its preparation method and activation method. Background Technology

[0002] Existing MEMS (Micro Electro Mechanical Systems) getter pumps mostly employ silicon-based substrate fabrication schemes. Typically, a single-crystal silicon wafer is used as the substrate, and an insulating layer, a thin-film heating circuit, and a getter functional layer are sequentially fabricated on the substrate surface. Joule heating is generated by energizing the heating circuit, causing the getter to reach its activation temperature and restoring its adsorption activity. Some improved schemes utilize electrochemical etching processes to fabricate three-dimensional porous silicon scaffolds on the silicon substrate surface, and then deposit a getter film on the scaffold surface to increase the effective specific surface area of ​​the getter, thereby improving getter capacity and getter rate.

[0003] However, existing silicon-based MEMS getter pumps still have many insurmountable technical shortcomings in practical applications: Firstly, silicon itself has high thermal conductivity. During the heating and activation process, a large amount of heat will be quickly conducted outward through the silicon substrate, resulting in low heating efficiency of the getter and high activation power consumption. At the same time, the thermal crosstalk generated by the heat conduction to the surrounding area will affect the working stability and performance accuracy of other MEMS functional devices in the same package.

[0004] Secondly, planar thin-film getters have limited effective specific surface area, making it difficult to meet the application requirements of small volume and high getter capacity; while porous silicon support solutions rely on electrochemical etching processes for fabrication, resulting in poor wafer-level consistency of pore morphology and size, low fabrication yield, and chemical contamination introduced during the process can easily have adverse effects on MEMS devices, making it difficult to adapt to the mass production requirements of high precision and high consistency.

[0005] Third, most existing MEMS getter pumps are discrete device structures, requiring additional assembly processes to integrate them into the MEMS package cavity. This not only increases the packaging steps and overall size, but also makes it difficult to achieve deep integration with advanced wafer-level packaging processes such as glass cap packaging and silicon-silicon bonding packaging, thus restricting the further miniaturization and integration of MEMS systems. Summary of the Invention

[0006] To address the aforementioned problems, this application provides a MEMS getter pump based on TGV filling, comprising: The glass substrate includes a first glass substrate; At least one through-hole penetrating the first glass substrate; And getter material filled in the through holes to adsorb residual gas in the vacuum chamber; A second glass substrate is located on a first glass substrate, and a heating circuit is provided between the second glass substrate and the first glass substrate for heating the getter material in the through hole, wherein the heating circuit route passes through the through hole.

[0007] Furthermore, there are multiple through holes, which are arranged in an array on the glass substrate.

[0008] Furthermore, the getter material is a non-evaporable getter and is a porous sintered body.

[0009] Furthermore, the non-evaporative getter is a titanium-zirconium-vanadium alloy, wherein the atomic ratio of titanium, zirconium, and vanadium is 1:1:1, or the atomic ratio of titanium, zirconium, and vanadium is (0.8~1.2):1:1.

[0010] Furthermore, the second glass substrate and the first glass substrate are disposed opposite to each other and sealed together by a bonding layer, which is used to fix the second glass substrate and the first glass substrate and form a closed space.

[0011] Furthermore, the heating circuit is a thin-film heating circuit with serpentine wiring.

[0012] Furthermore, it also includes an insulating passivation layer disposed between the heating circuit and the getter material in the through hole.

[0013] Furthermore, the insulating passivation layer is made of silicon nitride.

[0014] Furthermore, it also includes a porous barrier layer and a vacuum chamber. The porous barrier layer is disposed on the end of the glass substrate facing the vacuum chamber. The vacuum chamber is sealed to the glass substrate. The through hole is connected to the vacuum chamber through the porous barrier layer. The porous barrier layer is used to allow gas to pass through and block getter particles.

[0015] Furthermore, the porous barrier layer is made of porous silicon dioxide.

[0016] Furthermore, the second glass substrate has at least one electrical lead through-hole, which is filled with conductive material for electrically connecting the heating circuit to an external power source.

[0017] Furthermore, the aperture of the through-hole for the electrical lead is 30~50μm, and the conductive material is one of copper, tungsten, gold, or conductive silver paste.

[0018] Furthermore, the aperture of the through-hole is 30~50μm, and the thickness of the glass substrate is 400~600μm.

[0019] This application also provides a method for fabricating a MEMS getter pump based on TGV filling, comprising the following steps: Provide a first glass substrate and a second glass substrate; At least one through-hole is formed on the first glass substrate; The first glass substrate and the second glass substrate are positioned opposite each other and sealed together. A heating circuit is formed on the second glass substrate; Fill the through-hole with getter material.

[0020] Furthermore, the getter material includes: titanium zirconium vanadium alloy powder is made into a slurry, filled into the through holes, dried, and sintered to form a porous sintered body.

[0021] This application also provides an activation method for a MEMS getter pump based on TGV filling, comprising the following steps: When the heating circuit is energized, it generates Joule heat. Joule heating is conducted through the glass substrate to the getter material in the through-hole, raising its temperature to the activation temperature and holding it at that temperature for a preset time to activate the getter material.

[0022] Furthermore, the activation temperature is 350~400℃.

[0023] Furthermore, the activation process is carried out in an external high vacuum environment, and after activation, permanent gas-tight packaging is completed in an atmosphere with an oxygen content of less than 10 ppm and a water vapor content of less than 10 ppm.

[0024] Compared with the prior art, this application has the following advantages: A glass substrate is used instead of the traditional silicon substrate. The thermal conductivity of glass is much lower than that of silicon, thus effectively blocking large-scale heat loss to the substrate during the heating activation process. This concentrates heat on the getter material within the vias, significantly improving heating efficiency and reducing activation power consumption. Simultaneously, because the heat is confined to the via array region, it does not diffuse to surrounding MEMS functional devices, fundamentally suppressing thermal crosstalk and ensuring the operational stability and performance accuracy of other devices within the same package.

[0025] By creating through-holes in the first glass substrate and filling the through-holes with getter material, a three-dimensional space is provided for the getter using the sidewalls of the through-holes. Compared to traditional planar thin-film structures, the through-hole structure significantly expands the effective specific surface area of ​​the getter, achieving a significant increase in getter capacity within a limited device area, thus meeting the application requirements of miniaturization and high vacuum life.

[0026] A regular array of through-glass vias (TGV) is formed on the first glass substrate to serve as a support framework for the getter. TGV is a standard MEMS wafer-level fabrication process; the aperture, depth, and arrangement of the vias can be precisely controlled through photolithography and etching processes, resulting in wafer-level consistency and fabrication yield far superior to porous silicon scaffolds fabricated by electrochemical etching. Furthermore, TGV avoids processes such as wet etching that can introduce chemical contamination, eliminating the risk of contamination to MEMS devices.

[0027] The glass substrate structure, consisting of a first glass substrate and a second glass substrate, is fully compatible with wafer-level packaging processes commonly used in MEMS devices, such as anodic bonding and glass cap packaging. This structure can be directly integrated into the vacuum packaging cap of MEMS devices without requiring additional assembly space, reducing packaging steps and overall size, and facilitating further miniaturization and integration of MEMS systems.

[0028] Other features and advantages of this application will be set forth in the description which follows, and will be apparent in part from the description, or may be learned by practicing the application. The objectives and other advantages of this application may be realized and obtained by means of the structures pointed out in the description, claims and drawings. Attached Figure Description

[0029] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0030] Figure 1 This is a schematic diagram of the overall structure of the MEMS getter pump based on TGV filling in Embodiment 1 of this application.

[0031] Figure 2 This is a disassembled view of the various parts of the MEMS getter pump in Embodiment 1 of this application.

[0032] Figure 3 This is a side cross-sectional view of the MEMS getter pump in Embodiment 1 of this application.

[0033] In the picture: 1. Glass substrate; 10. Through hole; 11. First glass substrate; 12. Second glass substrate; 121. Electrical lead through hole; 2. Getter material; 3. Heating circuit; 4. Insulating passivation layer; 5. Porous barrier layer; 6. Vacuum cavity. Detailed Implementation

[0034] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0035] Example 1 This embodiment provides a MEMS getter pump based on TGV filling. For example... Figure 1 As shown, the getter pump includes a glass substrate 1, at least one through-hole 10 penetrating the glass substrate 1, and getter material 2 filled in the through-hole 10 for adsorbing residual gas in the vacuum chamber 6. The glass substrate 1 includes a first glass substrate 11 and a second glass substrate 12, with the first glass substrate 11 sealed onto the vacuum chamber 6.

[0036] Specifically, in this embodiment, the first glass substrate 11 is a rectangular plate made of borosilicate glass or quartz glass with a thickness of 500 μm. Multiple through-holes 10 penetrating its upper and lower surfaces are formed in the first glass substrate 11 using a TGV process. These through-holes 10 are arranged in a regular array, and the diameter of each through-hole 10 is approximately 40 μm. The through-holes 10 are filled with a non-evaporable getter material 2, specifically a porous sintered body of titanium-zirconium-vanadium (Ti-Zr-V) alloy, wherein the atomic ratio of titanium, zirconium, and vanadium is 1:1:1.

[0037] Reference Figure 2 The getter pump in this embodiment also includes a second glass substrate 12 located above the first glass substrate 11. The second glass substrate 12 is also a rectangular flat plate made of glass material, with a space cut out inside to accommodate the heating circuit 3. Two through holes 121 for electrical leads are processed in the second glass substrate 12 using TGV technology for the vertical leads of the heating circuit 3.

[0038] The heating circuit 3 is disposed on the lower surface of the second glass substrate 12 (i.e., the surface close to the first glass substrate 11). In this embodiment, the heating circuit 3 is made of titanium, and the trace shape is designed as a serpentine pattern. The example trace width is 50 μm, the trace spacing is 100 μm, and the number of traces is 7. Electrode pads are provided at both ends of the heating circuit 3 for connection to an external DC drive power supply. The serpentine trace area completely covers the area directly above the array of TGV vias 10 below, with a 50-100 μm margin at the edges to ensure that the getter in all vias 10 can be uniformly heated.

[0039] The second glass substrate 12 and the first glass substrate 11 are disposed opposite to each other and sealed together by a bonding layer. Specifically, the bonding layer is a low-temperature glass paste sealing structure, which achieves the fixation and sealing of the two glass substrates 1 through a low-temperature glass paste bonding process, forming a closed space for accommodating and protecting the heating circuit 3.

[0040] An insulating passivation layer 4 is provided between the heating circuit 3 and the getter material 2 within the through-hole 10 of the first glass substrate 11. The insulating passivation layer 4 is made of silicon nitride and is formed by low-pressure chemical vapor deposition, with a thickness of 200~800nm. This insulating passivation layer 4 serves to achieve electrical isolation between the heating circuit 3 and the getter material 2 below, and also provides physical protection and environmental isolation, thereby improving the long-term reliability of the device.

[0041] A porous barrier layer 5 is provided at one end of the through-hole 10 facing the vacuum cavity 6 (i.e., the lower surface side of the first glass substrate 11). The through-hole 10 is connected to the vacuum cavity 6 through the porous barrier layer 5, which allows gas to pass through while blocking getter particles. The porous barrier layer 5 is made of silicon dioxide (SiO2), with a thickness of 200-300 nm, an average pore size of 30-80 nm, and a porosity of 40%-60%. This porous barrier layer 5 allows residual gas molecules in the vacuum cavity 6 to freely diffuse into the through-hole 10 and contact the getter, while effectively preventing tiny particles of the getter material 2 from falling into the vacuum cavity 6, thus avoiding contamination of MEMS functional devices.

[0042] The first glass substrate 11 is anoly bonded to the MEMS silicon substrate in a sealing ring region without a porous layer around it to form a vacuum cavity 6.

[0043] The two through-holes 121 on the second glass substrate 12 are filled with conductive material for electrically connecting the heating circuit 3 to an external power source. In this embodiment, the diameter of the through-holes 121 is 30 μm, and the conductive material is copper (Cu). The specific filling process can employ a seed layer followed by electroplating or copper paste sintering, or other processes compatible with the conductive filler.

[0044] Example 2 This embodiment describes the working principle and usage of the above-mentioned MEMS getter pump.

[0045] Non-evaporative getter materials 2 (such as Ti-Zr-V alloys) form a passivation layer composed of oxides and nitrides on their surface at room temperature, masking the internal active metal sites and thus lacking effective getter capability. When a direct current is applied to the serpentine thin-film heating circuit 3, the heating circuit 3 generates constant heat based on the Joule effect. Due to the low thermal conductivity of the glass substrate 1, the heat is effectively confined to the array region of vias 10 and efficiently conducted vertically to the Ti-Zr-V porous sintered body inside each TGV via 10.

[0046] When the temperature of getter material 2 is raised to the activation temperature range (350~400℃) and kept at that temperature for a certain period of time (e.g., 15~30 minutes), the oxide passivation layer on the surface of the getter will diffuse and decompose into the interior of the material, exposing fresh active metal atoms, thereby completing the activation process of the getter and enabling it to adsorb gases.

[0047] After activation, heating is stopped, and the getter temperature gradually drops to room temperature. At this time, active residual gas molecules such as H2, O2, N2, CO, and water vapor in the vacuum chamber 6 freely diffuse into the interior of the TGV through-hole 10 through the porous barrier layer 5 at the bottom of the through-hole 10. They fully contact the active sites on the inner wall of the through-hole 10 and the surface of the porous sintered body and undergo a stable chemical reaction, binding the gas molecules inside the getter material 2, thereby actively reducing the residual gas concentration inside the chamber and maintaining a high vacuum environment for a long time.

[0048] In terms of usage, the fabricated glass through-hole array getter pump assembly is assembled with a MEMS silicon substrate, with the porous barrier layer 5 facing the MEMS vacuum cavity 6 and the heating circuit 3 facing the outer side of the package. In the external high-vacuum environment before final permanent hermetically sealed packaging, a DC drive is applied to the heating electrodes to raise the getter to the preset activation temperature (350~400℃) and maintain this temperature. After cooling, glass-silicon anode bonding and sealing are completed under low-oxygen and low-moisture conditions. After packaging, no continuous power supply is required; the device relies on the getter capacity of the initially activated Ti-Zr-V porous sintered body to maintain the cavity vacuum. When the capacity is exhausted, the designed vacuum lifetime is reached.

[0049] Example 3 This embodiment provides a method for preparing the above-mentioned MEMS getter pump, including the following steps: Step 1: A first glass substrate 11 is provided, and a glass via (TGV) processing technology such as laser-induced etching, dry etching, or wet etching is used to form an array of vias 10 with a predetermined number, diameter, and depth on the first glass substrate 11. The diameter of the vias 10 is approximately 40 μm, and the substrate thickness is approximately 500 μm.

[0050] Step 2: An alloy powder with a Ti, Zr, and V atomic ratio of 1:1:1 is mixed with an organic carrier (such as terpineol or ethyl cellulose) to prepare a slurry with a certain degree of fluidity. The slurry is then filled into the through-holes 10 formed in Step 1 by means of screen printing, inkjet printing, or vacuum infusion.

[0051] Step 3: The glass substrate 1 filled with slurry is dried and sintered at high temperature (e.g., sintered at 800~1000℃ in a vacuum or inert gas atmosphere) to volatilize the organic carrier in the slurry and sinter the alloy powder to form a porous getter sintered body with interconnected pores 10.

[0052] Step 4: On the back side of the first glass substrate 11 (i.e., the side facing the vacuum chamber 6), a porous barrier layer 5 is formed to cover the opening area of ​​the through-hole 10 by methods such as spin coating, spraying, or chemical vapor deposition (CVD). The porous barrier layer 5 has a thickness of 200~300nm, an average pore size of 30~80nm, and a porosity of 40%~60%. Simultaneously, it ensures that the anodic bonding sealing ring area around the first glass substrate 11 is not covered by the porous barrier layer 5.

[0053] Step 5: A second glass substrate 12 is prepared separately, and copper electrical lead vias 121 (approximately 30 μm in diameter) are fabricated on it using TGV technology. A Ti serpentine thin-film heating circuit 3 is then fabricated using sputtering, photolithography, and etching processes. Subsequently, a silicon nitride insulating passivation layer 4 is formed on the surface of the heating circuit 3 using LPCVD technology.

[0054] Step 6: The prepared first glass substrate 11 and second glass substrate 12 are aligned and bonded together using a low-temperature glass paste bonding process to form a closed space.

[0055] Step 7: Place the component to be packaged in a vacuum packaging device and heat and activate the getter material 2 in an external high vacuum environment; the gas generated during the activation process is discharged from the vacuum packaging device.

[0056] Step 8: After activation, under vacuum conditions, anoly bond the getter pump glass substrate 1 to the silicon MEMS device to form the final permanent hermetically sealed package. Getter activation and anoly bonding can be completed continuously in the same vacuum packaging equipment, but getter activation should be performed before anoly bonding to form the permanent hermetically sealed package.

[0057] Example 4 This embodiment provides a further detailed description of the porous barrier layer 5.

[0058] A porous barrier layer 5 is disposed at one end of the through hole 10 facing the vacuum cavity 6, and its core function is to "allow gas to pass through while blocking particles". To achieve this function, its material, thickness, pore size and porosity need to be carefully designed.

[0059] In this embodiment, the porous barrier layer 5 is made of silicon dioxide, a material highly compatible with MEMS processes. Its thickness is preferably 200-300 nm. If the thickness is too thin, the mechanical strength is insufficient, making it prone to breakage and unable to effectively block getter particles; if the thickness is too thick, the gas diffusion resistance increases, affecting the getter rate.

[0060] Its average pore size is preferably 30~80nm. This pore size range is much larger than the diameter of gas molecules (usually less than 1nm), so it will not hinder the free diffusion of gas molecules; at the same time, it is much smaller than the size of getter particles (usually in the micrometer range), so it can effectively prevent particles from falling off.

[0061] The preferred porosity is 40% to 60%. Porosity determines the effective cross-sectional area through which gas can pass. Higher porosity results in faster gas diffusion, but also a corresponding decrease in mechanical strength. A porosity of 40% to 60% achieves a good balance between gas permeability and mechanical strength.

[0062] There are various methods for forming the porous barrier layer 5. For example, a porous SiO2 film can be formed at the opening of the via 10 by combining the sol-gel method with spin coating; or a porous SiO2 film with the required pore size and porosity can be obtained by adjusting the deposition parameters (such as RF power, gas flow ratio, substrate temperature, etc.) through plasma-enhanced chemical vapor deposition (PECVD).

[0063] Example 5 This embodiment provides a further detailed description of the heating circuit 3.

[0064] The heating circuit 3 is located between the second glass substrate 12 and the first glass substrate 11, and the heating circuit 3 passes through each through hole 10. The heating circuit 3 is the energy input interface of the entire getter pump, and its design directly affects the activation power consumption, temperature uniformity and device reliability.

[0065] In this embodiment, the heating circuit 3 uses titanium as the resistive material. Titanium has high resistivity, good high-temperature resistance, and good compatibility with MEMS processes. The wiring shape of the heating circuit 3 is serpentine. This design can achieve a longer resistive path within a limited chip area, thereby obtaining the required heating power at a lower voltage.

[0066] The specific parameters for the serpentine routing are as follows: line width of 50 μm, line spacing of 100 μm, and number of traces of 7. These parameters can be adjusted according to the required resistance value and thermal uniformity requirements. For example, if higher heating power is required, the line width can be reduced or the number of traces can be increased; if better temperature uniformity is required, the distribution density of the traces can be optimized so that each location in the via 10 array region receives approximately the same heat input.

[0067] The serpentine (S-shaped) trace area of ​​heating circuit 3 completely covers the area directly above the array of TGV vias 10 below, with a margin of 50~100μm at the edges. This is done to ensure that the vias 10 in the edge areas are also sufficiently heated, to avoid "cold zones," and to ensure that the getter in all vias 10 is uniformly activated.

[0068] like Figure 3 As shown, the heating circuit 3 has electrode pads at both ends for connection to an external DC drive power supply. The area of ​​the electrode pads should be large enough to facilitate probe or wire bonding. The pad material can be a titanium / gold (Ti / Au) composite layer to improve conductivity and solderability.

[0069] The low thermal conductivity of the glass substrate 1 plays a crucial role here. Due to the very low thermal conductivity of glass (approximately 1 W / (m·K)), the heat generated by the heating circuit 3 is difficult to conduct horizontally through the glass substrate 1, but is mainly conducted downwards vertically, directly acting on the getter material 2 within the via 10. This "directional heat transfer" design allows most of the electrical energy to be converted into heat energy effectively used to activate the getter, thereby significantly reducing activation power consumption. Simultaneously, because the heat is confined to the via 10 array region, it does not diffuse to surrounding MEMS functional devices, effectively suppressing thermal crosstalk.

[0070] Example 6 This embodiment provides a more detailed description of the parameter design for the through-hole 10 array.

[0071] The through-hole 10 array is the carrier skeleton of the getter, and its geometric parameters (pore diameter, pore depth, pore spacing, and arrangement) directly determine the load of the getter, the effective specific surface area, the gas diffusion path, and the mechanical strength.

[0072] In this embodiment, the pore size of the through hole 10 is preferably 30~50μm, more preferably 40μm. The selection of the pore size needs to take into account several factors: the larger the pore size, the greater the getter loading of a single through hole 10, but the number of through holes 10 will be reduced accordingly, and the specific surface area advantage of the sidewall of the through hole 10 will be weakened; the smaller the pore size, the larger the specific surface area of ​​the sidewall of the through hole 10, but the difficulty of filling the getter will increase, and the mechanical strength may decrease.

[0073] The thickness of the first glass substrate 11 (i.e., the depth of the via 10) is preferably 400~600μm, more preferably 500μm. The thicker the substrate, the deeper the via 10, and the greater the getter loading, but the longer the gas diffusion path, which may affect the getter rate; the thinner the substrate, the shorter the gas diffusion path, but the mechanical strength decreases and the processing difficulty increases.

[0074] The vias 10 are preferably arranged in a regular array, such as a square array or a hexagonal array. A regular arrangement can be precisely controlled using standard photolithography processes, ensuring wafer-level consistency and repeatability of getter loading. The spacing between the vias 10 (i.e., the hole wall thickness) needs to be optimized based on mechanical strength and process requirements, typically ranging from 20 to 50 μm.

[0075] By adjusting the above parameters, different application requirements can be flexibly matched. For example, for large cavities that require a long vacuum life, a larger aperture and a deeper through-hole 10 can be used to load more getter; for small cavities that are sensitive to size, a smaller aperture and a shallower through-hole 10 can be used to save space.

[0076] Example 7 This embodiment provides a further detailed description of the electrical lead via 121 in the second glass substrate 12.

[0077] The through-hole 121 is a key structure for realizing the electrical connection between the heating circuit 3 and the external power supply. In this embodiment, the second glass substrate 12 is provided with at least two through-holes 121, which correspond to the two electrode pads of the heating circuit 3 respectively.

[0078] The aperture of the electrical lead via 121 is preferably 30~50μm. If the aperture is too small, it will be more difficult to fill with conductive material, and the contact resistance may increase; if the aperture is too large, it will occupy too much chip area.

[0079] The conductive material filling the through-hole 121 is preferably copper. Copper has excellent electrical and thermal conductivity and is relatively inexpensive. The filling process can be a seed layer plus electroplating method: first, a thin copper seed layer is formed on the inner wall of the through-hole 10 by sputtering or chemical plating, and then the through-hole 10 is completely filled by electroplating. Alternatively, a copper paste sintering method can be used: copper powder is mixed with an organic carrier to form a paste, which is then filled into the through-hole 10 and sintered to form the desired shape.

[0080] Besides copper, other conductive materials can also be used, such as tungsten, gold, or conductive silver paste, depending on process compatibility and cost requirements.

[0081] The presence of the through-hole 121 allows the electrodes of the heating circuit 3 to be easily led out to the upper surface of the device, facilitating connection with external driving circuits. This vertical interconnection method avoids complex side wiring, simplifies the packaging process, and improves integration.

[0082] Example 8 This embodiment provides a further detailed description of the insulating passivation layer 4.

[0083] An insulating passivation layer 4 is disposed between the heating circuit 3 and the getter material 2 in the through hole 10 of the first glass substrate 11. Its main functions are electrical isolation and environmental protection.

[0084] In this embodiment, the insulating passivation layer 4 is made of silicon nitride. Silicon nitride is an excellent insulating material with high dielectric strength and low leakage current density. Simultaneously, silicon nitride also possesses excellent chemical stability and resistance to moisture penetration, effectively protecting the underlying heating circuit 3 from environmental corrosion.

[0085] The thickness of the insulating passivation layer 4 is preferably 200~800nm. If the thickness is too thin, the insulation performance may be insufficient and it is easily penetrated by pinhole defects; if the thickness is too thick, it will increase the thermal resistance and affect the heating efficiency.

[0086] The insulating passivation layer 4 can be formed by low-pressure chemical vapor deposition (LPCVD). LCVD can deposit high-quality silicon nitride films at relatively low temperatures (approximately 700-800°C), and has advantages such as good uniformity and strong step coverage.

[0087] Besides silicon nitride, other insulating materials, such as silicon dioxide or aluminum oxide, can also be used, but silicon nitride has superior overall performance.

[0088] Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. A MEMS getter pump based on TGV filling, characterized in that, include: Glass substrate (1), including first glass substrate (11); At least one through hole (10) penetrating the first glass substrate (11). And getter material (2) filled in the through hole (10) for adsorbing residual gas in the vacuum cavity (6); A second glass substrate (12) is located on the first glass substrate (11), and a heating circuit (3) is provided between the second glass substrate (12) and the first glass substrate (11) for heating the getter material (2) in the through hole (10), wherein the heating circuit (3) passes through the through hole (10).

2. The MEMS getter pump based on TGV filling according to claim 1, characterized in that, There are multiple through holes (10), which are arranged in an array on the glass substrate (1).

3. The MEMS getter pump based on TGV filling according to claim 1 or 2, characterized in that, The getter material (2) is a non-evaporative getter and is a porous sintered body.

4. The MEMS getter pump based on TGV filling according to claim 3, characterized in that, The non-evaporative getter is a titanium-zirconium-vanadium alloy, wherein the atomic ratio of titanium, zirconium, and vanadium is 1:1:1, or the atomic ratio of titanium, zirconium, and vanadium is (0.8~1.2):1:

1.

5. The MEMS getter pump based on TGV filling according to claim 1, characterized in that, The second glass substrate (12) and the first glass substrate (11) are disposed opposite to each other and sealed together by a bonding layer. The bonding layer is used to fix the second glass substrate (12) and the first glass substrate (11) and form a closed space.

6. The MEMS getter pump based on TGV filling according to claim 1 or 5, characterized in that, The heating circuit (3) is a thin-film heating circuit (3) with serpentine wiring.

7. The MEMS getter pump based on TGV filling according to claim 1 or 5, characterized in that, It also includes an insulating passivation layer (4), which is disposed between the heating circuit (3) and the getter material (2) in the through hole (10).

8. The MEMS getter pump based on TGV filling according to claim 7, characterized in that, The insulating passivation layer (4) is made of silicon nitride.

9. The MEMS getter pump based on TGV filling according to claim 1, characterized in that, It also includes a porous barrier layer (5) and a vacuum chamber (6). The porous barrier layer (5) is disposed on one end of the glass substrate (1) facing the vacuum chamber (6). The vacuum chamber (6) is sealed to the glass substrate (1). The through hole (10) is connected to the vacuum chamber (6) through the porous barrier layer (5). The porous barrier layer (5) is used to allow gas to pass through and block getter particles.

10. The MEMS getter pump based on TGV filling according to claim 9, characterized in that, The porous barrier layer (5) is made of porous silicon dioxide.

11. The MEMS getter pump based on TGV filling according to claim 1, characterized in that, The second glass substrate (12) is provided with at least one electrical lead through hole (121), which is filled with conductive material for electrically connecting the heating circuit (3) to an external power source.

12. The MEMS getter pump based on TGV filling according to claim 11, characterized in that, The diameter of the through-hole (121) is 30~50μm, and the conductive material is one of copper, tungsten, gold or conductive silver paste.

13. The MEMS getter pump based on TGV filling according to claim 1, characterized in that, The aperture of the through hole (10) is 30~50μm, and the thickness of the glass substrate (1) is 400~600μm.

14. A method for fabricating a MEMS getter pump based on TGV filling, characterized in that, Includes the following steps: A first glass substrate (11) and a second glass substrate (12) are provided. At least one through hole (10) is formed on the first glass substrate (11). The first glass substrate (11) and the second glass substrate (12) are arranged opposite to each other and sealed together; A heating circuit (3) is formed on the second glass substrate (12); The through hole (10) is filled with getter material (2).

15. The preparation method according to claim 14, characterized in that, The getter material (2) includes: titanium zirconium vanadium alloy powder is made into a slurry, filled into the through hole (10), dried and sintered to form a porous sintered body.

16. An activation method for a MEMS getter pump based on TGV filling as described in any one of claims 1 to 13, characterized in that, Includes the following steps: Power is applied to the heating circuit (3) to generate Joule heat; The Joule heat is conducted through the glass substrate (1) to the getter material (2) in the through hole (10), raising its temperature to the activation temperature and holding it at that temperature for a preset time to activate the getter material (2).

17. The activation method according to claim 16, characterized in that, The activation temperature is 350~400℃.

18. The activation method according to claim 16, characterized in that, The activation process is carried out in an external high vacuum environment, and after activation, permanent gas-tight packaging is completed in an atmosphere with an oxygen content of less than 10 ppm and a water vapor content of less than 10 ppm.

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