Dynamic control method and device for power consumption and heat dissipation of phased array, T / R component and phased array
Patent Information
- Application Number
- CN202511216637.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-28
- Publication Date
- 2026-10-30
AI Technical Summary
[0004]针对在发射链路增加数控衰减器可以对发射功率进行调整,但是无法减低功耗热耗;控制休眠部分天线阵元通道的模式可以降低相控阵的功耗热耗,对发射功率进行调整,但是无法避免波束宽度展宽,测角分辨率降低等问题
1、本发明能够实现对功耗热耗的动态控制及可配置调整,且保证了相控阵波束宽度、指向分辨率等指标不受影响。
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Figure CN123010479A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of transmit power and power consumption control, and more specifically, to a dynamic control method, device, T / R component, and phased array for power consumption and heat dissipation. Background Technology
[0002] Currently, advanced phased array radars both domestically and internationally employ active phased array technology. In particular, the development of gallium nitride (GaN) technology in recent years has enabled the integration of active phased array apertures into a smaller space while achieving higher output power. With the same aperture array size, a GaN-based phased array can achieve twice the output power, resulting in a corresponding increase in detection range and improved jamming effectiveness. However, this increased output power also leads to a corresponding increase in power consumption and heat dissipation.
[0003] In detection or jamming operations, phased array systems adjust their transmission power based on the target parameters, application environment, and operating temperature conditions, while also controlling the power and heat dissipation of the phased array. Furthermore, due to the constraints of fighter jets, high performance with low power and heat dissipation is typically required; this is especially true in the later stages of a mission when fuel is nearly depleted, necessitating even lower power and heat dissipation requirements for the phased array. Traditional gallium arsenide (GaAs) phased array systems employ two methods: The first is to add a digitally controlled attenuator to the transmission link to adjust the output power, but the downside is that it does not help the power consumption and heat dissipation of the entire phased array. The second method is to shut down some antenna array element channels as needed. This method is very effective in adjusting the transmission power and reducing power consumption. However, the disadvantage is that because some array element channels are shut down, there are fewer antenna array elements, the array factor decreases, the ERP of the phased array decreases, and the beamwidth will increase accordingly, resulting in a decrease in the detection angular resolution and making it difficult to concentrate energy, which affects the phased array detection or interference effect. Summary of the Invention
[0004] While adding a digitally controlled attenuator to the transmit link can adjust the transmit power, it cannot reduce power consumption and heat dissipation. Controlling the sleep mode of some antenna array elements can reduce the power consumption and heat dissipation of the phased array and adjust the transmit power, but it cannot avoid problems such as beamwidth widening and reduced angular resolution. This invention provides a method, device, T / R module, and phased array for dynamic control of power consumption and heat dissipation in a phased array. Taking advantage of the wide power supply range of the gallium nitride power amplifier in the T / R module, and based on the real-time acquired phased array temperature, the adjustable power supply dynamically controls the voltage of the gallium nitride power amplifier in the T / R module. This achieves adjustment of the phased array transmit power and dynamic control of power consumption and heat dissipation without affecting the beamwidth and array factor.
[0005] In a first aspect, the present invention provides a dynamic control method for power consumption and heat dissipation of a phased array, comprising: The power supply voltage of the GaN power amplifier in the T / R component is dynamically adjusted based on the temperature information of the GaN power amplifier in the T / R component.
[0006] In a preferred embodiment, the dynamic adjustment of the supply voltage of the gallium nitride power amplifier in the T / R component includes: Compare the temperature information of GaN power amplifiers with T / R modules with the operating temperature threshold of GaN power amplifiers with T / R modules; If the temperature information of the GaN power amplifier of the T / R module does not exceed the operating temperature threshold of the GaN power amplifier of the T / R module, then the GaN power amplifier of the T / R module will be kept at the normal power supply voltage; If the temperature information of the GaN power amplifier in the T / R module exceeds the operating temperature threshold of the GaN power amplifier in the T / R module, then the supply voltage of the GaN power amplifier in the T / R module will be reduced.
[0007] In a preferred embodiment, the operating temperature threshold of the gallium nitride power amplifier in the T / R component is preset.
[0008] In a preferred embodiment, the range of values for the supply voltage of the gallium nitride power amplifier in the T / R component is reduced as needed.
[0009] In a second aspect, the present invention provides a dynamic control device for power consumption and heat dissipation of a phased array, including a beam controller and an adjustable power supply component. The beam controller is used to send voltage selection control commands to the adjustable power supply component based on the temperature information of the gallium nitride power amplifier in the T / R component. The adjustable power supply component is used to dynamically adjust the power supply voltage of the gallium nitride power amplifier of the T / R component according to the received voltage selection control command.
[0010] In a preferred embodiment, the beam controller is specifically used for: Compare the temperature information of GaN power amplifiers with T / R modules with the operating temperature threshold of GaN power amplifiers with T / R modules; If the temperature information of the GaN power amplifier of the T / R component does not exceed the operating temperature threshold of the GaN power amplifier of the T / R component, a voltage selection control command is sent to the adjustable power supply component to keep the GaN power amplifier of the T / R component at the normal supply voltage. If the temperature of the GaN power amplifier in the T / R module exceeds the operating temperature threshold of the GaN power amplifier in the T / R module, a voltage selection control command is sent to the adjustable power supply component to reduce the supply voltage of the GaN power amplifier in the T / R module.
[0011] In a preferred embodiment, the operating temperature threshold of the gallium nitride power amplifier in the T / R component is preset.
[0012] In a preferred embodiment, the range of values for the supply voltage of the gallium nitride power amplifier in the T / R component is reduced as needed.
[0013] Thirdly, the present invention provides a T / R component, wherein the T / R component employs a gallium nitride power amplifier; the power supply voltage of the gallium nitride power amplifier in the T / R component is controlled by the aforementioned dynamic control device for power consumption and heat dissipation of the phased array.
[0014] Fourthly, the present invention provides a phased array comprising a plurality of transmit branches and a beamforming / transmit driving assembly connected to the plurality of transmit branches; each transmit branch includes a connected array antenna and a T / R assembly; the T / R assembly is the aforementioned T / R assembly.
[0015] In summary, due to the adoption of the above technical solution, the beneficial effects of the present invention are: 1. This invention enables dynamic control and configurable adjustment of power consumption and heat dissipation, while ensuring that the phased array beamwidth, pointing resolution and other indicators are not affected.
[0016] 2. In practical applications, this invention can dynamically adjust and control the transmission power, power consumption, and heat dissipation of the phased array antenna over a wider range, based on the array size of the phased array antenna and the working mode of the digitally controlled attenuator and the dormant part of the antenna array element channels, thus adapting to various environmental conditions. Attached Figure Description
[0017] Figure 1 The transmit power curves of gallium nitride power amplifiers with T / R components at different supply voltages.
[0018] Figure 2 The transmit power consumption curves of gallium nitride power amplifiers with T / R components at different supply voltages.
[0019] Figure 3 The output efficiency curves of the T / R components of gallium nitride power amplifiers at different operating voltages are shown.
[0020] Figure 4 This is a schematic diagram illustrating the dynamic control principle of power consumption and heat dissipation of the phased array in an embodiment of the present invention.
[0021] Figure 5 This is a graph showing the test results of the phased array transmit power synthesis power with dynamic control of power consumption and heat dissipation in an embodiment of the present invention. Detailed Implementation
[0022] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.
[0023] Therefore, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the invention without inventive effort are within the scope of protection of the invention.
[0024] Based on the operational requirements of fighter jets, different combat scenarios necessitate adjustments to the power consumption and heat dissipation of phased arrays. This invention provides a dynamic control method for the power consumption and heat dissipation of phased arrays. The T / R component within the phased array uses a gallium nitride (GaN) power amplifier. GaN power amplifiers possess advantages such as a large bandgap, high breakdown voltage, high thermal conductivity, and low dielectric constant. Utilizing the high operating voltage characteristic of GaN power amplifiers, the operating voltage is adjusted in a targeted manner based on factors such as the system operating mode and the phased array operating environment, achieving the goal of dynamically controlling the output power and overall power consumption and heat dissipation of the phased array. The output power and power consumption of a certain type of GaN power amplifier at different operating voltages are shown below. Figure 1 , Figure 2 As shown. Actual testing and analysis show that the T / R module can operate at full efficiency within a voltage range of 20V~28V, with efficiency as follows: Figure 3 As shown.
[0025] according to Figure 1 and Figure 2 The power and heat dissipation characteristics shown are dynamically configured based on the power control requirements issued by the system and the collected ambient temperature of the power amplifier. Specifically, the dynamic control method for the power and heat dissipation of the phased array is as follows: The power supply voltage of the GaN power amplifier in the T / R module is dynamically adjusted according to the temperature information of the GaN power amplifier in the T / R module.
[0026] The temperature information of the GaN power amplifier in the T / R module can be collected and fed back by a temperature acquisition module installed in the GaN power amplifier. Then, the operating temperature threshold of the GaN power amplifier is preset. Simultaneously, the supply voltage of the GaN power amplifier is configured as needed, including the normal operating voltage and the supply voltage when power consumption needs to be reduced.
[0027] The dynamic adjustment of the power supply voltage of the gallium nitride power amplifier in the T / R component includes: Compare the temperature information of GaN power amplifiers with T / R modules with the operating temperature threshold of GaN power amplifiers with T / R modules; If the temperature information of the GaN power amplifier of the T / R module does not exceed the operating temperature threshold of the GaN power amplifier of the T / R module, then the GaN power amplifier of the T / R module will be kept at the normal power supply voltage; If the temperature of the GaN power amplifier in the T / R module exceeds its operating temperature threshold, the power supply voltage of the GaN power amplifier will be reduced. This reduces system power consumption, alleviates the load on the heat dissipation system, and ensures normal system operation. It should be noted that multiple operating temperature thresholds and corresponding power supply voltages can be preset as needed, allowing for different voltage reductions at different temperatures, thus enabling the GaN power amplifier in the T / R module to have multiple operating modes.
[0028] Correspondingly, a dynamic control device for the power and heat dissipation of a phased array is implemented, such as... Figure 4 As shown, it includes a beam controller and an adjustable power supply assembly; The beam controller is used to issue voltage selection control commands to the adjustable power supply component based on the temperature information of the GaN power amplifier in the T / R module. The temperature information of the GaN power amplifier in the T / R module can be acquired by a temperature acquisition module located in the GaN power amplifier and fed back to the beam controller. The operating temperature threshold and the corresponding supply voltage can be preset and configured by the beam controller receiving system control commands.
[0029] The adjustable power supply component is used to dynamically adjust the power supply voltage of the gallium nitride power amplifier of the T / R component according to the received voltage selection control command, thereby reducing system power consumption, reducing the load on the heat dissipation system, and ensuring normal system operation.
[0030] Similarly, Figure 4 As shown, a T / R component is also implemented, wherein the T / R component adopts a gallium nitride power amplifier; the power supply voltage of the gallium nitride power amplifier of the T / R component is controlled by the dynamic control device for power consumption and heat dissipation of the phased array mentioned above. The specific working principle is described in the foregoing embodiment and will not be repeated here.
[0031] Similarly, Figure 4 As shown, a phased array is also implemented, including multiple transmit branches and beamforming / transmit driving components connected to the multiple transmit branches; each transmit branch includes a connected array antenna and a T / R component; the specific working principle of the T / R component is described in the foregoing embodiments and will not be repeated here.
[0032] To verify the practical application effect of the present invention, the aforementioned dynamic control method for power consumption and heat dissipation of the phased array was applied to a small active phased array to dynamically control power consumption. This phased array is a 16-element one-dimensional linear array, and the power amplifier inside the T / R module is a gallium nitride (GaN) power amplifier. Table 1 shows the power consumption and current records during full-array transmission under different supply voltage conditions of the GaN power amplifier, and the transmission power records are as follows: Figure 5 As shown in Table 1 and Figure 5 The measured data shows that by configuring the power supply voltage of the GaN power amplifier with T / R components, the power consumption, heat dissipation and transmission power of the phased array can be dynamically controlled within a certain range. For every 2V decrease in voltage, the power consumption decreases by 100W, the heat dissipation decreases by 80W, and the output power decreases by 0.7dBm, achieving the expected effect.
[0033] Table 1. Test results of phased array transmit power consumption with dynamic control of power and heat dissipation:
[0034] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.
Claims
1. A dynamic control method for power consumption and heat dissipation of a phased array, characterized in that, include: The power supply voltage of the GaN power amplifier in the T / R component is dynamically adjusted based on the temperature information of the GaN power amplifier in the T / R component.
2. The dynamic control method for power consumption and heat dissipation of a phased array according to claim 1, characterized in that, The dynamic adjustment of the power supply voltage of the gallium nitride power amplifier in the T / R component includes: Compare the temperature information of GaN power amplifiers with T / R modules with the operating temperature threshold of GaN power amplifiers with T / R modules; If the temperature information of the GaN power amplifier of the T / R module does not exceed the operating temperature threshold of the GaN power amplifier of the T / R module, then the GaN power amplifier of the T / R module will be kept at the normal power supply voltage; If the temperature information of the GaN power amplifier in the T / R module exceeds the operating temperature threshold of the GaN power amplifier in the T / R module, then the supply voltage of the GaN power amplifier in the T / R module will be reduced.
3. The dynamic control method for power consumption and heat dissipation of a phased array according to claim 2, characterized in that, The operating temperature threshold of the gallium nitride power amplifier in the T / R component is preset.
4. The dynamic control method for power consumption and heat dissipation of a phased array according to claim 2, characterized in that, The range of power supply voltage values for the GaN power amplifier in the T / R component can be configured as needed.
5. A dynamic control device for power consumption and heat dissipation of a phased array, characterized in that, Includes beam controller and adjustable power supply components; The beam controller is used to send voltage selection control commands to the adjustable power supply component based on the temperature information of the gallium nitride power amplifier in the T / R component. The adjustable power supply component is used to dynamically adjust the power supply voltage of the gallium nitride power amplifier of the T / R component according to the received voltage selection control command.
6. The dynamic control device for power consumption and heat dissipation of a phased array according to claim 5, characterized in that, The beam controller is specifically used for: Compare the temperature information of GaN power amplifiers with T / R modules with the operating temperature threshold of GaN power amplifiers with T / R modules; If the temperature information of the GaN power amplifier of the T / R component does not exceed the operating temperature threshold of the GaN power amplifier of the T / R component, a voltage selection control command is sent to the adjustable power supply component to keep the GaN power amplifier of the T / R component at the normal supply voltage. If the temperature of the GaN power amplifier in the T / R module exceeds the operating temperature threshold of the GaN power amplifier in the T / R module, a voltage selection control command is sent to the adjustable power supply component to reduce the supply voltage of the GaN power amplifier in the T / R module.
7. The dynamic control device for power consumption and heat dissipation of a phased array according to claim 6, characterized in that, The operating temperature threshold of the gallium nitride power amplifier in the T / R component is preset.
8. The dynamic control device for power consumption and heat dissipation of a phased array according to claim 6, characterized in that, The range of power supply voltage values for the GaN power amplifier in the T / R component can be configured as needed.
9. A T / R component, wherein the T / R component employs a gallium nitride power amplifier; characterized in that, The power supply voltage of the gallium nitride power amplifier in the T / R module is controlled by the dynamic control device for power consumption and heat dissipation of the phased array as described in any one of claims 5-8.
10. A phased array comprising multiple transmit branches and beamforming / transmit driving components connected to the multiple transmit branches; each transmit branch comprising a connected array antenna and a T / R assembly; characterized in that, The T / R component is the T / R component as described in claim 9.
