Semiconductor temperature-controlled fluidic circuit and online monitoring method

Abstract

The present application relates to a kind of semiconductor temperature control fluid circuit and online monitoring method, the semiconductor temperature control fluid circuit includes clean liquid storage unit, low precipitation main flow channel, main circulating pump, heat exchange unit, terminal liquid supply and return interface, online monitoring bypass, purification bypass and pollution controller, the online monitoring method, it includes the following steps: baseline establishment, online monitoring, risk index calculation and hierarchical control.The present application can capture multi-dimensional pollution parameters such as particle, ion, bubble, pressure difference in real time, realize the quantitative evaluation and early warning of pollution state, pollution controller executes hierarchical control strategy automatically according to different threshold of risk index R, fault diagnosis and maintenance suggestion output, improve operation efficiency, through active, real-time, intelligent pollution monitoring and control, significantly reduce the risk of equipment downtime, wafer scrap or process deviation caused by temperature control fluid pollution, so as to improve the mean time between failures of semiconductor equipment and product yield.

Description

Technical Field

[0001] This invention relates to the field of precision temperature control systems for semiconductor equipment, specifically to a semiconductor temperature control fluid circuit and an online monitoring method. Background Technology

[0002] In semiconductor manufacturing processes, the temperature control loops of semiconductor equipment typically operate in a continuous cycle for extended periods, with fluids in constant contact with pumps, valves, heat exchangers, joints, seals, filters, and piping materials. Under these operating conditions, if materials release metal ions, plasticizers, particles, or microbubbles, they may contaminate sensitive components inside the equipment, thereby affecting electrical insulation performance, particle control capabilities, and overall process stability.

[0003] Existing traditional industrial temperature-controlled fluid systems primarily focus on basic thermal parameters such as temperature, flow rate, and pressure, while paying insufficient attention to fluid cleanliness, ion contamination, material compatibility, and secondary contamination caused by maintenance processes. Even in systems equipped with filters, contamination is frequently introduced due to factors such as dead ends in the piping, insufficient venting, filter bypass, dripping from joints, or improper maintenance operations, thus weakening the filtration effect.

[0004] In semiconductor customer sites, contamination incidents are often difficult to locate quickly. Temperature control units, circulation piping, and cooled equipment may be supplied by different vendors, lacking a unified contamination monitoring mechanism. Without online monitoring and traceable operating logs, the source of contamination is difficult to determine, and it is impossible to take timely bypass purification or isolation measures when the risk is still small.

[0005] Specifically, existing technologies have the following problems: Firstly, flow path materials, seals, and metal components may release ions or particles under long-term temperature cycling and chemical conditions, forming a continuous source of pollution.

[0006] Secondly, the filtration module, degassing module, ion capture module, and online monitoring module are scattered and lack a coordinated control strategy aimed at pollution risk, making it difficult to form an overall cleanliness guarantee.

[0007] Third, dead angles, blind holes, low points of horizontal pipes, and residual liquid in quick connectors in the circuit can easily cause particle retention and bring the risk of microbial growth or sediment accumulation.

[0008] Fourth, the liquid replacement, filter replacement and venting steps in the maintenance process are prone to secondary pollution due to the exposure of the operating interface and splashing of residual droplets.

[0009] Furthermore, the pollution-related indicators and the alarm mechanism of the temperature control system are independent of each other, making it impossible to protect the equipment in advance or arrange predictive maintenance based on changes in pollution trends, which affects system reliability and production efficiency.

[0010] No solutions have yet been proposed to address the related technical issues. Summary of the Invention

[0011] To address the problems in related technologies, this invention proposes a semiconductor temperature-controlled fluid loop and online monitoring method to overcome the aforementioned technical issues in existing technologies. The purpose of this invention is to effectively prevent external contaminants from entering the system, while preventing fluid evaporation or absorption of moisture and oxygen from the air. It can capture multi-dimensional contamination parameters such as particles, ions, bubbles, and pressure differences in real time, enabling quantitative assessment and early warning of contamination status. The contamination controller automatically executes graded control strategies based on different thresholds of the risk index R, reducing the consumption of filters and ion exchange resins. Fault diagnosis and maintenance suggestions are output to improve operation and maintenance efficiency. Through proactive, real-time, and intelligent contamination monitoring and control, the risk of equipment downtime, wafer scrapping, or process deviation caused by temperature-controlled fluid contamination is significantly reduced, thereby improving the mean time between failures (MTBF) of semiconductor equipment and product yield.

[0012] To achieve the above objectives, the present invention provides the following technical solution: a semiconductor temperature-controlled fluid circuit, comprising: Clean liquid storage unit for storing temperature-controlled fluids and providing airtight isolation; The low-precipitation main channel is connected to the clean liquid storage unit and is used to circulate and transport the temperature-controlled fluid; The main circulation pump is located on the low-deposition main channel and is used to drive the temperature-controlled fluid circulation. A heat exchange unit is installed on the low-deposition main channel to regulate the temperature of the temperature-controlled fluid; The terminal liquid supply and return interface is used to connect the cooled components of semiconductor equipment to form a temperature-controlled cycle; An online monitoring bypass is provided, wherein the inlet and outlet of the online monitoring bypass are respectively connected to the low-precipitation main channel, and temperature-controlled fluid samples are continuously or intermittently collected, and pollution parameters including particle count, conductivity or resistivity are monitored. A purification bypass, wherein the inlet and outlet of the purification bypass are respectively connected to the low precipitation main channel, and the purification bypass is internally provided with at least one of a filter, an ion exchange, and a metal ion capture module; The pollution controller is electrically connected to the online monitoring bypass, the purification bypass, the main circulation pump, and the isolation valve installed on the low-emission main channel. The pollution controller receives monitoring data from the online monitoring bypass, calculates the pollution risk index, and controls the input ratio of the purification bypass and the operation of the isolation valve according to the level of the pollution risk index.

[0013] Preferably, the online monitoring bypass is equipped with a particle counter, a temperature-compensated conductivity sensor, a temperature-compensated resistivity sensor, a temperature sensor, and a pressure sensor connected in series; the sampling flow rate of the online monitoring bypass is less than 10% of the flow rate of the low-precipitation main channel.

[0014] Preferably, the purification bypass further includes a proportional regulating valve, and the pollution controller controls the opening degree of the proportional regulating valve to achieve dynamic adjustment of the purification bypass within the flow range of 0% to 100%.

[0015] Preferably, the material in contact with the temperature-controlled fluid in the clean liquid storage unit is one or a combination of stainless steel, PFA, PTFE, PEEK, PVDF, and ceramics.

[0016] To achieve the above objectives, the present invention provides the following technical solution: An online monitoring method includes the following steps: S1, Baseline Establishment: After startup, pre-rinse and exhaust are performed. After the contamination controller confirms that the particle count, conductivity or resistivity is stable, a clean baseline is established. S2, Online monitoring: The online monitoring bypass continuously collects particle count, conductivity, resistivity, temperature and pressure signals, and transmits them to the pollution controller; S3, Risk Index Calculation: The pollution controller compares the real-time monitoring data with the clean baseline, temperature compensation value and historical maintenance data to calculate the pollution risk index R; S4, Hierarchical Control: When R exceeds the first threshold, the pollution controller increases the proportion of the purification bypass in operation; When R exceeds the second threshold, the contamination controller triggers an alarm and restricts the terminal liquid supply and return interface from supplying liquid to the semiconductor device; When R exceeds the third threshold, the pollution controller closes the isolation valve and switches the loop to the internal safety loop mode.

[0017] Preferably, the pollution risk index R is calculated using a weighted summation model: R = aP + bI + cD + dB + eT, where P is the particulate risk term, derived from the normalized value of particle counts for different particle size ranges; I is the ion risk term, derived from the normalized value of conductivity or resistivity; D is the filter pressure difference risk term; B is the bubble or degassing risk term; T is the trend change risk term; and a, b, c, d, and e are weighting coefficients preset according to the sensitivity levels of different semiconductor devices.

[0018] Preferably, it also includes maintenance mode control steps: When the filter replacement / removal / maintenance signal is triggered, the pollution controller first closes the terminal supply and return liquid interface and switches the main unit side circuit to internal circulation; Perform local flushing, defoaming, and waste liquid discharge operations; After maintenance is completed, the data of the online monitoring bypass is continuously monitored. Only when the pollution risk index R is continuously and stably lower than the recovery threshold for a preset time will the pollution controller allow the terminal supply and return liquid interface to be reopened.

[0019] Preferably, when the temperature-compensated conductivity sensor or temperature-compensated resistivity sensor detects an abnormal increase in ion concentration that does not recover, the contamination controller outputs a liquid replacement maintenance suggestion and records the abnormal time; when the particle counter detects a sudden increase in particle size and simultaneously monitors an increase in filter differential pressure, the contamination controller determines that the particle load is abnormal and automatically increases the flow rate ratio of the purification bypass.

[0020] Compared with the prior art, the beneficial effects of the present invention are: (1) The present invention is a semiconductor temperature control fluid circuit and online monitoring method. By setting a clean liquid storage unit with low precipitation material and achieving airtight isolation with the temperature control fluid contact part, external pollutants are effectively prevented from entering the system, while preventing the fluid from evaporating or absorbing moisture and oxygen in the air, thus meeting the stringent requirements of ultra-high cleanliness for semiconductor manufacturing. (2) The present invention is a semiconductor temperature-controlled fluid circuit and an online monitoring method. The online monitoring bypass continuously or intermittently collects temperature-controlled fluid samples, integrates a particle counter, a temperature-compensated conductivity / resistivity sensor, and a temperature and pressure sensor, and can capture multi-dimensional pollution parameters such as particles, ions, bubbles, and pressure difference in real time. Combined with the pollution controller, the pollution risk index R is calculated to realize the quantitative assessment and early warning of the pollution status, and avoid sudden pollution leading to the batch scrapping of semiconductor equipment; (3) This invention is a semiconductor temperature-controlled fluid circuit and online monitoring method. By setting a pollution controller, it automatically executes a graded control strategy according to different thresholds of the risk index R. When the pollution is mild, the proportion of purification bypass input is increased, and the working intensity of the filter, ion exchange and metal ion capture module is dynamically adjusted to avoid excessive purification and energy waste. When the pollution is moderate, an alarm is triggered and the terminal liquid supply is limited to prevent the polluted fluid from entering the semiconductor equipment and protect the core process chamber. When the pollution is severe, the isolation valve is closed and the circuit is switched to the internal safety circulation mode to completely cut off the pollution risk source and provide a safe window for equipment maintenance. (4) The present invention is a semiconductor temperature control fluid circuit and online monitoring method. By setting a proportional regulating valve in the purification bypass, the pollution controller can dynamically adjust the purification flow rate within the range of 0% to 100% flow rate. When the pollution load is low, the purification ratio is maintained to reduce the consumption of filters and ion exchange resins. When the pollution load is high, the purification ratio is automatically increased to quickly restore the fluid cleanliness and achieve an intelligent balance between operating costs and process requirements. (5) This invention is a semiconductor temperature-controlled fluid circuit and online monitoring method. When the ion concentration rises abnormally and does not recover, it automatically outputs liquid replacement maintenance suggestions and records the abnormal time to assist in the formulation of preventive maintenance plans. When the particle volume suddenly increases and the filter differential pressure rises at the same time, it is judged that the particle load is abnormal and the purification bypass flow ratio is automatically increased to prevent the filter from clogging and failing prematurely. It supports historical data comparison and trend analysis to provide data support for optimizing maintenance cycles and evaluating the life of purification components. (6) This invention is a semiconductor temperature control fluid circuit and an online monitoring method. The sampling flow rate of the online monitoring bypass is controlled within 10% of the main flow rate of the low precipitation main channel to avoid significant fluctuations in the pressure, temperature and flow rate of the main circuit caused by sampling, and to ensure that the temperature control fluid received by the semiconductor equipment is always stable and controllable. Through active, real-time and intelligent pollution monitoring and control, the risk of equipment downtime, wafer scrapping or process deviation caused by temperature control fluid pollution is significantly reduced, thereby improving the mean time between failures and product yield of semiconductor equipment. Detailed Implementation

[0021] The technical solutions in the embodiments of the present invention will be clearly and completely described below. Example

[0022] This invention proposes a technical solution for a semiconductor temperature-controlled fluid circuit and an online monitoring method: a semiconductor temperature-controlled fluid circuit, comprising: The clean liquid storage unit is used to store temperature-controlled fluids and provide airtight isolation; specifically, the clean liquid storage unit must ensure the chemical purity of the fluid (avoiding dissolved impurities or particle precipitation) and prevent external air from entering and causing oxygen and moisture contamination. The low-emission main channel is connected to the clean liquid storage unit and is used to circulate and transport the temperature-controlled fluid. Specifically, "low-emission" means that the inner wall material of the channel will hardly release organic molecules, ions or particles when in long-term contact with the temperature-controlled fluid, thus avoiding secondary pollution. Common methods of implementation include high-purity PFA tubes, electrolytically polished stainless steel tubes, etc. The main circulation pump is located on the low-precipitation main channel and is used to drive the temperature-controlled fluid circulation. Specifically, the main circulation pump should be selected with low shear force and low particle generation (such as a magnetic drive pump or diaphragm pump) to avoid introducing particles into the fluid due to impeller rotation or seal wear. The heat exchange unit is located on the low precipitation main channel and is used to regulate the temperature of the temperature-controlled fluid. Specifically, it is usually a plate or shell-and-tube heat exchanger, which is used in conjunction with an external heat source (such as a chiller or heater) to achieve precise temperature control of the semiconductor equipment (common accuracy ±0.1℃). The terminal liquid supply and return interface is used to connect the cooled components of semiconductor equipment to form a temperature-controlled cycle. Specifically, the terminal liquid supply and return interface is a quick connector or flange connection, which must have a leak-proof and low dead volume design to facilitate docking with the equipment end cold plate or heat exchanger. An online monitoring bypass is provided, with its inlet and outlet connected to the low-precipitation main channel, to continuously or intermittently collect temperature-controlled fluid samples and monitor contamination parameters, including particle count, conductivity, or resistivity. Specifically, the online monitoring bypass avoids flow resistance or bubble interference caused by directly installing the monitoring sensor on the main channel. A purification bypass is provided, with its inlet and outlet connected to the low-emission main channel, respectively. The purification bypass internally incorporates at least one of the following: a filter, an ion exchange, and a metal ion capture module. Specifically, the purification bypass is a dynamically deployable treatment branch. The filter intercepts particulate matter with a precision of 0.05 μm or finer. The ion exchange uses mixed-bed resin to remove anions / cations, maintaining a resistivity ≥18.2 MΩ·cm. The metal ion capture module specifically adsorbs Cu. ²⁺ Fe ³⁺ Ni ²⁺ Trace amounts of metals that are harmful to semiconductor devices; The pollution controller is electrically connected to the online monitoring bypass, the purification bypass, the main circulation pump, and the isolation valve installed on the low-emission main channel. The pollution controller receives monitoring data from the online monitoring bypass, calculates the pollution risk index, and controls the input ratio of the purification bypass and the operation of the isolation valve according to the level of the pollution risk index. Specifically, the pollution controller is a PLC or embedded industrial controller with data acquisition, risk algorithm calculation, and actuator control functions. The isolation valve is usually a pneumatic or electric diaphragm valve located at the outlet end of the main channel and is used to cut off the liquid supply to the equipment.

[0023] Furthermore, the online monitoring bypass is equipped with a particle counter, a temperature-compensated conductivity sensor, a temperature-compensated resistivity sensor, a temperature sensor, and a pressure sensor connected in series; the sampling flow rate of the online monitoring bypass is less than 10% of the flow rate of the low-precipitation main channel.

[0024] In this embodiment, the sampling flow rate is less than 10% of the main flow rate to ensure that it does not affect the main circulation. The particle counter uses the photoresistivity method or the laser scattering method, and the detected particle size is usually ≥0.1μm. The temperature-compensated conductivity sensor and the temperature-compensated resistivity sensor have built-in temperature correction algorithms because the ion concentration is strongly correlated with temperature, so they can truly reflect the total ion content (such as TOC and metal ions) in the water.

[0025] Furthermore, the purification bypass also includes a proportional regulating valve, and the pollution controller dynamically adjusts the purification bypass within the flow range of 0% to 100% by controlling the opening of the proportional regulating valve.

[0026] Furthermore, the material in contact with the temperature-controlled fluid in the clean liquid storage unit is one or more combinations of stainless steel, PFA, PTFE, PEEK, PVDF, and ceramics.

[0027] In this embodiment, it has low dissolution and low adsorption characteristics, which meets the requirements of semiconductor clean environment.

[0028] To achieve the above objectives, the present invention provides the following technical solution: An online monitoring method includes the following steps: S1, Baseline Establishment: After startup, pre-rinse and venting are performed. After the contamination controller confirms that the particle count, conductivity, or resistivity is stable, a clean baseline is established. Specifically, pre-rinse involves replacing air and loosening particles with high-purity water or an initial temperature-controlled fluid. Venting can prevent air bubbles from interfering with sensor readings. The contamination controller continuously monitors particles and conductivity / resistivity. When the values ​​fluctuate less than the allowable deviation within a set time (e.g., 10 minutes), the current value is recorded as the clean baseline. This clean baseline is used for subsequent comparisons. S2, Online Monitoring: The online monitoring bypass continuously collects particle count, conductivity, resistivity, temperature, and pressure signals and transmits them to the pollution controller; specifically, the bypass collects five types of signals in real time at a fixed sampling frequency (e.g., 1 time / second): particle count (classified by particle size, e.g., ≥0.1μm, ≥0.2μm), conductivity, resistivity, temperature, and pressure, and transmits them to the pollution controller via RS485 or Ethernet; S3, Risk Index Calculation: The pollution controller compares the real-time monitoring data with the clean baseline, temperature compensation value and historical maintenance data to calculate the pollution risk index R; S4, Hierarchical Control: When R exceeds the first threshold, the pollution controller increases the proportion of the purification bypass; specifically, the controller increases the opening of the proportional adjustment valve on the purification bypass (e.g., from 20% to 60%) to increase the filtration and purification flow rate. When R exceeds the second threshold, the contamination controller triggers an alarm and restricts the supply of liquid to the semiconductor device from the terminal liquid supply interface; specifically, it triggers an audible and visual alarm and closes the isolation valve at the terminal liquid supply interface or sends an interlock signal to the semiconductor device (stopping the cooling of that path). When R exceeds the third threshold, the contamination controller closes the isolation valve and switches the loop to the internal safety circulation mode. Specifically, the isolation valve supplying liquid to the equipment is completely closed, while the main circulation pump continues to run. The fluid circulates only within the clean liquid storage unit → low precipitation main channel → purification bypass → clean liquid storage unit to prevent contamination from spreading to the equipment.

[0029] Furthermore, the pollution risk index R is calculated using a weighted summation model: R = aP + bI + cD + dB + eT, where P is the particulate risk term, derived from the normalized value of particle counts for different particle size ranges; I is the ion risk term, derived from the normalized value of conductivity or resistivity; D is the filter pressure difference risk term; B is the bubble or degassing risk term; T is the trend change risk term; and a, b, c, d, and e are weighting coefficients preset according to the sensitivity levels of different semiconductor devices.

[0030] In this embodiment, the model is a weighted summation. The meaning and normalization method of each item are as follows: For the particle risk item, the measured number of particles in each particle size range is divided by the clean baseline value of the corresponding particle size, and after weighted summation, it is normalized to 0~100; for the ion risk item, the more severe the increase in conductivity or decrease in resistivity, the higher the normalized value; for the filter pressure difference risk item, if the pressure difference of the purification bypass or main flow filter exceeds 1.5 times the initial value, this item increases; for the bubble or degassing risk item, the presence of bubbles is determined by the pressure fluctuation + temperature change rate, as bubbles interfere with particle counting and reduce thermal conductivity; for the trend change risk item, the change rate of the most recent 10 sampling points is monitored, and if a sudden increase occurs (such as the number of particles doubling within 3 seconds), this item increases significantly; for example, for lithography machines with extremely high cooling requirements, α (particle weight) is set to 0.5; for etching machines, α (ion weight) is set to 0.4.

[0031] Furthermore, it also includes maintenance mode control steps: When the filter replacement / removal / maintenance signal is triggered, the pollution controller first closes the terminal supply and return liquid interface and switches the main unit side circuit to internal circulation; Perform local flushing, defoaming, and waste liquid discharge operations; After maintenance is completed, the data of the online monitoring bypass is continuously monitored. Only when the pollution risk index R is continuously and stably lower than the recovery threshold for a preset time will the pollution controller allow the terminal supply and return liquid interface to be reopened.

[0032] In this embodiment, when the filter or ion exchange resin needs to be replaced, the operator issues a maintenance signal, and the contamination controller automatically: Close the terminal interface and disconnect the device. Initiate local flushing (e.g., backflush the filter housing with clean fluid) and drain the waste liquid into a collection container; After maintenance, continuously monitor bypass data; only when the R value is consistently below the "recovery threshold" (e.g., below 10) for more than a preset time (e.g., 5 minutes) will the terminal interface be reopened to resume fluid supply. This process avoids equipment contamination caused by maintenance operations.

[0033] Furthermore, when the temperature-compensated conductivity sensor or temperature-compensated resistivity sensor detects an abnormal increase in ion concentration that does not recover, the contamination controller outputs a liquid replacement maintenance suggestion and records the abnormal time; when the particle counter detects a sudden increase in particle size and simultaneously monitors an increase in filter differential pressure, the contamination controller determines that the particle load is abnormal and automatically increases the flow rate ratio of the purification bypass.

[0034] In this embodiment, the ion level rises abnormally and does not recover: the controller outputs a "liquid replacement maintenance suggestion"—indicating that the temperature-controlled fluid may be saturated with dissolved ions and needs to be replaced entirely; A sudden increase in particle volume combined with a rise in filter differential pressure indicates that the filter has reached the end of its lifespan or that a large number of particles have been released from upstream. The controller automatically increases the purification bypass flow rate (e.g., from 30% to 80%) to achieve rapid purification without shutting down the system.

[0035] In this invention, metal ion monitoring can use online conductivity or resistivity as a rapid indicator, and can also be configured with ion-selective electrodes, sampling and detection interfaces, or periodic laboratory testing linkages; the filter can be melt-blown, membrane filtration, metal sintering, ceramic filtration, or multi-stage combined filtration, depending on fluid compatibility and pressure drop limitations; degassing can be achieved through membrane degassing, vacuum degassing, top exhaust, centrifugal exhaust, or microbubble capture chambers; the risk index can use rule weights, baseline drift models, statistical process control, or machine learning anomaly detection, but interpretable threshold logic should be retained; disposable clean tubing packages, replaceable clean boxes, or integrated clean modules can be supported to adapt to different customer maintenance strategies.

[0036] The effectiveness of this invention was verified through material immersion, temperature cycling, particle baseline testing, maintenance simulation, and long-term operation tests, as shown in Table 1 below: Table 1 Test Data Table Material precipitation verification The candidate material is immersed in the target fluid and temperature range and then subjected to ion or conductivity detection. Material number, fluid type, temperature, time, conductivity, and metal ion detection results. Particle control verification Online particle counting and offline sampling comparison were performed before and after operation. Particle size distribution, particle number trend, and filter pressure difference. Bypass purification verification By artificially introducing controlled contamination or using aged fluids, the recovery capacity of the purification bypass can be observed. Changes in recovery time, bypass ratio, and risk index. Maintenance of pollution verification Simulate filter replacement and connector disassembly to compare contamination recovery time with and without maintenance mode. Particle peak value, flushing volume, and recovery threshold attainment time. Temperature control impact verification Temperature stability and flow disturbance were measured under different opening degrees of the purification bypass. Fluctuations in liquid supply temperature, flow rate, and pressure drop. Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A semiconductor temperature-controlled fluidic circuit, characterized in that, include: Clean liquid storage unit for storing temperature-controlled fluids and providing airtight isolation; The low-precipitation main channel is connected to the clean liquid storage unit and is used to circulate and transport the temperature-controlled fluid; The main circulation pump is located on the low-deposition main channel and is used to drive the temperature-controlled fluid circulation. A heat exchange unit is installed on the low-deposition main channel to regulate the temperature of the temperature-controlled fluid; The terminal liquid supply and return interface is used to connect the cooled components of semiconductor equipment to form a temperature-controlled cycle; An online monitoring bypass is provided, wherein the inlet and outlet of the online monitoring bypass are respectively connected to the low-precipitation main channel, and temperature-controlled fluid samples are continuously or intermittently collected, and pollution parameters including particle count, conductivity or resistivity are monitored. A purification bypass, wherein the inlet and outlet of the purification bypass are respectively connected to the low precipitation main channel, and the purification bypass is internally provided with at least one of a filter, an ion exchange, and a metal ion capture module; The pollution controller is electrically connected to the online monitoring bypass, the purification bypass, the main circulation pump, and the isolation valve installed on the low-emission main channel. The pollution controller receives monitoring data from the online monitoring bypass, calculates the pollution risk index, and controls the input ratio of the purification bypass and the operation of the isolation valve according to the level of the pollution risk index.

2. The semiconductor temperature-controlled fluid circuit according to claim 1, characterized in that: The online monitoring bypass is equipped with a particle counter, a temperature-compensated conductivity sensor, a temperature-compensated resistivity sensor, a temperature sensor, and a pressure sensor connected in series; the sampling flow rate of the online monitoring bypass is less than 10% of the flow rate of the low-precipitation main channel.

3. The semiconductor temperature-controlled fluid circuit according to claim 1, characterized in that: The purification bypass also includes a proportional regulating valve. The pollution controller controls the opening of the proportional regulating valve to achieve dynamic adjustment of the purification bypass within the flow range of 0% to 100%.

4. The semiconductor temperature-controlled fluid circuit according to claim 1, characterized in that: The clean liquid storage unit is in contact with the temperature-controlled fluid using one or more of the following materials: stainless steel, PFA, PTFE, PEEK, PVDF, and ceramics.

5. An online monitoring method based on the semiconductor temperature-controlled fluid circuit according to any one of claims 1 to 4, characterized in that, Includes the following steps: S1, Baseline Establishment: After startup, pre-rinse and exhaust are performed. After the contamination controller confirms that the particle count, conductivity or resistivity is stable, a clean baseline is established. S2, Online monitoring: The online monitoring bypass continuously collects particle count, conductivity, resistivity, temperature and pressure signals, and transmits them to the pollution controller; S3, Risk Index Calculation: The pollution controller compares the real-time monitoring data with the clean baseline, temperature compensation value and historical maintenance data to calculate the pollution risk index R; S4, Hierarchical Control: When R exceeds the first threshold, the pollution controller increases the proportion of the purification bypass in operation; When R exceeds the second threshold, the contamination controller triggers an alarm and restricts the terminal liquid supply and return interface from supplying liquid to the semiconductor device; When R exceeds the third threshold, the pollution controller closes the isolation valve and switches the loop to the internal safety loop mode.

6. The online monitoring method according to claim 5, characterized in that: The pollution risk index R is calculated using a weighted summation model: R = aP + bI + cD + dB + eT, where P is the particulate risk term, derived from the normalized value of particle counts for different particle size ranges; I is the ion risk term, derived from the normalized value of conductivity or resistivity; D is the filter pressure difference risk term; B is the bubble or degassing risk term; T is the trend change risk term; and a, b, c, d, and e are weighting coefficients preset according to the sensitivity levels of different semiconductor devices.

7. The online monitoring method according to claim 5, characterized in that: It also includes maintenance mode control steps: When the filter replacement / removal / maintenance signal is triggered, the pollution controller first closes the terminal supply and return liquid interface and switches the main unit side circuit to internal circulation; Perform local flushing, defoaming, and waste liquid discharge operations; After maintenance is completed, the data of the online monitoring bypass is continuously monitored. Only when the pollution risk index R is continuously and stably lower than the recovery threshold for a preset time will the pollution controller allow the terminal supply and return liquid interface to be reopened.

8. The online monitoring method according to claim 5, characterized in that: When the temperature-compensated conductivity sensor or temperature-compensated resistivity sensor detects an abnormal increase in ion concentration that does not recover, the contamination controller outputs a liquid replacement maintenance suggestion and records the abnormal time. When the particle counter detects a sudden increase in particle size and simultaneously monitors an increase in filter differential pressure, the contamination controller determines that the particle load is abnormal and automatically increases the flow rate ratio of the purification bypass.