An electromagnetic field parameter-efficiency coupling analysis method for switching circuits of multiple GaN HEMT devices

Abstract

The application provides an electromagnetic field parameter-efficiency coupling analysis method for a plurality of GaN HEMT device switching circuits, and belongs to the field of high-frequency device applications; solves the problems of rapid change of coupling parameters of a switching module and difficulty and time consumption of circuit efficiency calculation caused by asynchronous switching states of a plurality of high-frequency devices in the prior art; the method comprises the following steps: constructing a high-frequency switching circuit composed of a plurality of GaN HEMT devices; constructing the relationship between the voltage and current coupling parameters of the high-frequency switching circuit under different working states; using Maxwell equations to establish the relationship between the spatial magnetic field distribution, the spatial electric field distribution and the spatial variation time of the high-frequency switching circuit under different working states, the frequency of the high-frequency switching circuit and the spatial physical parameters; based on the coupling relationship between the parameters, the efficiency of the high-frequency switching circuit is represented by using electromagnetic fields; the application is applied to efficiency analysis of a plurality of GaN HEMT device switching circuits.

Description

Technical Field

[0001] This application relates to the field of high-frequency device application technology, and in particular to an electromagnetic field parameter-efficiency coupling analysis method for switching circuits of multiple GaN HEMT devices. Background Technology

[0002] Different semiconductor materials exhibit varying physical properties under complex operating environments. When multiple gallium nitride (GaN) high electron mobility metal gate transistors (HEMTs) are applied to high-frequency switching circuit modules with complex switching energy conversion processes and electromagnetic coupling characteristics, the changes in the physical characteristics of the high-frequency devices and the output characteristics of the circuit module due to coupling parameters make it more difficult to calculate the efficiency of the switching circuit. Gallium nitride (GaN) semiconductor material is ideal for studying high-frequency switching semiconductor devices under complex electromagnetic coupling environments. GaN HEMT devices possess excellent quality factors Johnson (JMF) and Baliga (BFOM), enabling them to exhibit superior performance and output efficiency in high-frequency, high-coupling-parameter switching circuits.

[0003] Currently, only a few studies have explored the relationship between the coupling characteristics of semiconductor materials and the switching efficiency and dynamic operating characteristics of devices, especially those involving high-frequency switching circuits with multiple GaN HEMT devices. At different temperatures, the dynamic characteristics, gate resistance, device current, DC bus voltage, switching performance, and power loss of cascaded GaN power devices change over time. However, existing research results are not applicable to common switching topologies and do not consider the impact of coupling parameters on the output efficiency of GaN HEMT devices. In studying the interaction mechanism between coupling parameters and devices, most research results focus on the design of device drive circuits and PCB layouts, without in-depth analysis of the dynamic physical influence between coupling parameters and high-frequency device operation. Summary of the Invention

[0004] To address the challenges in existing technologies, such as the rapid changes in coupling parameters of switching modules caused by the asynchronous switching states of multiple high-frequency devices, and the difficulty and time-consuming calculation of circuit efficiency, this application proposes an electromagnetic field parameter-efficiency coupling analysis method for switching circuits of multiple GaNHEMT devices.

[0005] The technical solution adopted in this application is: an electromagnetic field parameter-efficiency coupling analysis method for switching circuits of multiple GaN HEMT devices, comprising the following steps:

[0006] Step 1: Construct a high-frequency switching circuit consisting of multiple GaN HEMT devices connected in series and parallel;

[0007] Step 2: Construct the relationship between voltage and current coupling parameters of the high-frequency switching circuit under different operating conditions;

[0008] Step 3: Establish the spatial magnetic field distribution of the high-frequency switching circuit under different operating conditions using Maxwell's equations. Spatial electric field distribution With spatial change time High-frequency switching circuit frequency And the relationship between space physical parameters;

[0009] Step 4: Based on Step 2 and Step 3, construct the coupling relationship between the parameters, build a fast coupled parameter-efficiency analysis model, use electromagnetic field to represent the efficiency of the high-frequency switching circuit, and predict the range of the maximum, intermediate and minimum efficiency values ​​at the output of the high-frequency switching circuit based on this efficiency.

[0010] Furthermore, the overall architecture of the high-frequency switching circuit established in step one includes inductors. ,inductance ,inductance ,inductance ,inductance ,inductance ,inductance ,inductance ,inductance ,inductance Inverter-side inductor DC side voltage source GaN HEMT1 devices, GaN HEMT2 devices, GaN HEMT3 devices, GaN HEMT4 devices, GaN HEMT5 devices, and main circuit inductors;

[0011] Furthermore, in the subsequent analyses of steps two through four, the high-frequency switching circuit topology is divided into two types: boost circuit and buck circuit. The main circuit inductance of the boost circuit is... The main circuit inductance of the step-down circuit is .

[0012] Furthermore, in the high-frequency switching boost circuit, five GaN HEMT devices are distributed in three branches along with inductors, with the main circuit inductor being the most common. One end is connected to the DC voltage source Positive terminal, main circuit inductor The other end connects to one end of branch 1 and the inductor One end, inductor The other end connects to one end of branch 2 and the inductor One end, inductor The other end is connected to one end of branch 3, and the other ends of branches 1 / 2 / 3 are all connected to a DC voltage source. Negative extreme; branch 1 includes an inductor connected in series. GaN HEMT1 devices and inductors Branch 2 includes an inductor connected in series. GaN HEMT2 devices, inductors GaN HEMT3 devices and inductors Branch 3 includes an inductor connected in series. GaN HEMT4 devices, inductors GaN HEMT5 devices and inductors An inverter-side inductor is connected between the output terminal of the GaN HEMT2 device in branch 2 and the input terminal of the GaNHEMT5 device in branch 3. ;

[0013] In a high-frequency switching boost circuit, five GaN HEMT devices are distributed across three current loops. When GaN HEMT1 is turned on, the DC-side voltage source... Main circuit inductor ,inductance ,inductance Together they constitute the current circuit, current Generate magnetic field When GaN HEMT1 is turned off and GaN HEMT2 and GaN HEMT5 are simultaneously turned on, the DC-side voltage source... Main circuit inductor ,inductance ,inductance Inverter-side inductor and inductor Together they constitute the current circuit, current Generate magnetic field When the GaN HEMT1 device is turned off and the GaN HEMT4 and GaN HEMT3 devices are simultaneously turned on, the DC-side voltage source... Main circuit inductor ,inductance ,inductance ,inductance ,inductance Inverter-side inductor ,inductance ,inductance Together they constitute the current circuit, current Generate magnetic field The magnetic field generated by the intermediate circuit is Conversely, when the current When the GaN HEMT1 device in the circuit is turned off, it generates a reverse induced magnetic field. When the current When the GaN HEMT1 device in the circuit is turned on and the GaN HEMT2 and GaN HEMT5 devices are turned off simultaneously, a reverse induced magnetic field is generated. When the current When the GaN HEMT1 device in the circuit is turned on and the GaN HEMT4 and GaNHEMT3 devices are turned off simultaneously, a reverse induced magnetic field is generated. The induced magnetic field generated by the intermediate circuit is .

[0014] Furthermore, in the high-frequency switching buck circuit, five GaN HEMT devices are distributed in three branches along with inductors, with the main circuit inductor being the most common. Connect the positive terminal of branch 1 to the inductor Between, inductance GaN HEMT1 devices, inductors The voltage sources are connected in series on the DC side in sequence. Between the positive terminal and the positive terminal of branch 1, branch 1 is used to connect the inductor. With DC side voltage source negative electrode;

[0015] inductance The other end connects to one end of branch 2, inductor One end, inductor The other end is connected to branch 3, and branch 2 includes an inductor connected in series. GaN HEMT2 devices, inductors GaN HEMT3 devices and inductors Branch 3 includes an inductor connected in series. GaN HEMT4 devices, inductors GaN HEMT5 devices and inductors An inverter-side inductor is connected between the output terminal of the GaN HEMT2 device in branch 2 and the input terminal of the GaN HEMT5 device in branch 3. ;

[0016] In a high-frequency switching buck circuit, five GaN HEMT devices are distributed in three current loops. When GaN HEMT1, GaN HEMT2, and GaN HEMT5 devices are simultaneously turned on, the DC-side voltage source... Main circuit inductor ,inductance ,inductance ,inductance ,inductance Inverter-side inductor and inductor Together they constitute the current circuit, current Generate magnetic field When GaN HEMT1, GaN HEMT4, and GaN HEMT3 devices are simultaneously turned on, the DC-side voltage source... Main circuit inductor ,inductance ,inductance ,inductance ,inductance ,inductance ,inductance Inverter-side inductor ,inductance ,inductance Together they constitute the current circuit, current Generate magnetic field The magnetic field generated by the intermediate circuit is Conversely, when the current When the GaN HEMT1, GaN HEMT2, and GaN HEMT5 devices in the circuit are simultaneously turned off, a reverse induced magnetic field is generated. When the current When the GaN HEMT1, GaN HEMT4, and GaNHEMT3 devices in the circuit are simultaneously turned off, a reverse induced magnetic field is generated. The induced magnetic field generated by the intermediate circuit is .

[0017] Furthermore, the relationship between voltage and current coupling parameters in each loop of the high-frequency switching boost circuit is as follows:

[0018] ;

[0019] In the formula, Indicates the efficiency of the switching circuit. Indicates the input current. Indicates the output current. Represents current The induced current flowing through the circuit Represents current The induced current flowing through the circuit Represents current The induced current flowing through the circuit Indicates induced current In current The induced voltage in the circuit Indicates induced current In current The induced voltage in the circuit Indicates induced current In current The induced voltage in the circuit Indicates a loop;

[0020] , and These represent the rates of change of current in the three current loops, respectively. , , These represent the spatial magnetic field strength in the three current loops, respectively. , , These represent the induced magnetic field strengths in the three current loops, respectively. , , These represent the electric field strength in the three current loops, respectively. , , These represent the induced electric field strength in the three current loops, respectively.

[0021] Furthermore, the relationship between voltage and current coupling parameters in each loop of the high-frequency switching buck circuit is as follows:

[0022] ;

[0023] In the formula, Indicates the efficiency of the switching circuit. Indicates the input current. Indicates the output current. Represents current The induced current flowing through the circuit Represents current The induced current flowing through the circuit Indicates induced current In current The induced voltage in the circuit Indicates induced current In current The induced voltage in the circuit Indicates a loop;

[0024] and They represent currents respectively. , The rate of change of current in the circuit, , They represent currents respectively. , The spatial magnetic field strength in the circuit, , They represent currents respectively. , The intensity of the induced magnetic field in the circuit, , They represent currents respectively. , The electric field strength in the circuit, , They represent currents respectively. , The intensity of the induced electric field in the circuit.

[0025] Furthermore, the efficiency of the high-frequency switching boost circuit represented by the electromagnetic field in the fast coupling parameter-efficiency analysis model is as follows:

[0026]

[0027] In the formula, This indicates the efficiency of the high-frequency switching boost circuit.

[0028] Furthermore, the efficiency of the high-frequency switching buck circuit represented by the electromagnetic field in the fast coupling parameter-efficiency analysis model is as follows:

[0029] ;

[0030] In the formula, This indicates the efficiency of the high-frequency switching step-down circuit.

[0031] Furthermore, the current The inductance parameter in the high-frequency switching circuit is less than the current. When considering the inductance parameters in the circuit, the range of maximum, intermediate, and minimum efficiency values ​​at the output of the high-frequency switching circuit can be predicted using the efficiency formulas for either the high-frequency switching boost circuit or the high-frequency switching buck circuit.

[0032] Furthermore, the current The inductance parameter in the high-frequency switching circuit is greater than the current. When considering the inductance parameters in the circuit, the range of maximum, intermediate, and minimum efficiency values ​​at the output of the high-frequency switching circuit can be predicted using the efficiency formulas for either the high-frequency switching boost circuit or the high-frequency switching buck circuit.

[0033] The advantages of this application over the prior art are as follows:

[0034] 1. This application focuses on a switching circuit topology composed of a GaN HEMT series-parallel structure consisting of multiple high-frequency devices. It considers the variation of coupling parameters affected by the asynchronous and complex states of the high-frequency devices, and uses the analysis and optimization results of the coupling parameters to obtain the optimal efficiency of the circuit. A fast coupling parameter-efficiency analysis model for the high-frequency switching module is constructed. Through this model, the optimal parameters for the maximum output efficiency of the multi-switch high-frequency module circuit are predicted.

[0035] 2. The fast coupling parameter-efficiency analysis model of high-frequency switching circuits can significantly improve the efficiency of high-frequency switching modules while reducing their size and weight by leveraging the excellent high-frequency characteristics of GaN HEMT devices.

[0036] 3. This fast coupling parameter-efficiency analysis model breaks through the topological limitations of traditional switching circuits. Under conditions such as increased device quantity, complex circuit topology, and rapid changes in coupling parameters, it solves the influence relationship of GaN HEMT dynamic switches on the device efficiency variation law during application.

[0037] 4. The efficiency value of the switching circuit obtained by traditional calculation methods can only be calculated based on the output inductance. Current flowing through Obtained under constraints, i.e. However, the fast-coupled parameter-efficiency analysis model is not limited by the operating state of the switching circuit and can be used... ,Right now Under these conditions, parameter prediction is performed, and circuit efficiency is optimized.

[0038] 5. Based on the fast coupling parameter-efficiency analysis model of high-frequency switching circuit, this application can solve the complex changes in output efficiency caused by the spatial coupling electromagnetic field and the frequent operation of high-frequency switches. It involves fewer actual physical parameters of the circuit, has less impact on the complex switching state of high-frequency devices, and significantly improves the calculation speed. It can be used to predict the optimal parameters for multi-switch high-frequency module circuits to achieve maximum output efficiency. Attached Figure Description

[0039] The following description, in conjunction with the accompanying drawings, further illustrates this application:

[0040] Figure 1 The magnetic field distribution diagram is shown for a high-frequency switching boost circuit based on multiple GaN HEMT devices.

[0041] Figure 2 for Figure 1 The distribution of the induced magnetic field in a high-frequency switching boost circuit based on multiple GaN HEMT devices;

[0042] Figure 3The magnetic field distribution diagram is shown for a high-frequency switching buck circuit based on multiple GaN HEMT devices.

[0043] Figure 4 for Figure 3 The distribution of the induced magnetic field in a high-frequency switching buck circuit based on multiple GaN HEMT devices;

[0044] Figure 5 A comparison of the efficiency of the fast-coupled parameter-efficiency analysis model and traditional calculation methods in high-frequency switching boost circuits;

[0045] Figure 6 A comparison of the efficiency of the fast-coupled parameter-efficiency analysis model and the traditional calculation method in a high-frequency switching buck circuit. Detailed Implementation

[0046] like Figures 1 to 6 As shown, this application provides an electromagnetic field parameter-efficiency coupling analysis method for switching circuits of multiple GaN HEMT devices. It proposes an electromagnetic field parameter-efficiency coupling model for such circuits, taking a switching circuit topology composed of a series-parallel structure of multiple high-frequency GaN HEMT devices as the research object. The model considers the variation law of coupling parameters affected by the asynchronous and complex states of high-frequency devices, and uses the analysis and optimization results of the coupling parameters to obtain the optimal efficiency of the circuit. A fast coupling parameter-efficiency analysis model for the high-frequency switching module is also constructed. Through this model, the optimal parameters for the maximum output efficiency of the multi-switch high-frequency module circuit are predicted. This model overcomes the topological limitations of traditional switching circuits, and solves the influence of GaN HEMT dynamic switching on the device efficiency variation law during application under conditions such as increased device number, complex circuit topology, and rapid changes in coupling parameters. This model analysis method can predict the optimal parameter combination to maximize the output efficiency of the multi-switch high-frequency module circuit.

[0047] The method of this application is used in a switching circuit diagram with multiple GaN HEMT high-frequency devices, the overall architecture of which includes an inductor. ,inductance ,inductance ,inductance ,inductance ,inductance ,inductance ,inductance ,inductance ,inductance Inverter-side inductor DC side voltage source The GaN HEMT1 device, GaN HEMT2 device, GaN HEMT3 device, GaN HEMT4 device, GaN HEMT5 device, and main circuit inductor together form a high-frequency switching circuit. In this embodiment, the GaN HEMT1~5 devices are of model GS66516B.

[0048] The high-frequency switching circuit topology is divided into two types: boost circuit and buck circuit. The main circuit inductance of the boost circuit is... The main circuit inductance of the step-down circuit is .

[0049] In a high-frequency switching boost circuit, five GaN HEMT devices are distributed in three branches along with inductors, with the main circuit inductor being one of them. One end is connected to the DC voltage source Positive terminal, main circuit inductor The other end connects to one end of branch 1 and the inductor One end, inductor The other end connects to one end of branch 2 and the inductor One end, inductor The other end is connected to one end of branch 3, and the other ends of branches 1 / 2 / 3 are all connected to a DC voltage source. Negative extreme; branch 1 includes an inductor connected in series. GaN HEMT1 devices and inductors Branch 2 includes an inductor connected in series. GaN HEMT2 devices, inductors GaN HEMT3 devices and inductors Branch 3 includes an inductor connected in series. GaN HEMT4 devices, inductors GaN HEMT5 devices and inductors An inverter-side inductor is connected between the output terminal of the GaN HEMT2 device in branch 2 and the input terminal of the GaN HEMT5 device in branch 3. .

[0050] In a high-frequency switching boost circuit, five GaN HEMT devices are distributed in three current loops. When the switching GaNHEMT1 device is turned on, the DC-side voltage source... Main circuit inductor ,inductance ,inductance Together they constitute the current The circuit, when the switching GaN HEMT1 device is turned off and the GaN HEMT2 and GaN HEMT5 devices are simultaneously turned on, the DC-side voltage source... Main circuit inductor ,inductance ,inductance Inverter-side inductor and inductor Together they constitute the current The circuit, when the GaN HEMT1 switching device is turned off and the GaN HEMT4 and GaN HEMT3 devices are simultaneously turned on, the DC-side voltage source... Main circuit inductor ,inductance ,inductance ,inductance ,inductance Inverter-side inductor ,inductance ,inductance Together they constitute the current circuit, such as Figure 1 and Figure 2 As shown.

[0051] In the high-frequency switching buck circuit, five GaN HEMT devices are distributed across three branches along with the inductor. The circuit structures of branches 2 and 3 are identical to those in the high-frequency switching boost circuit. In the high-frequency switching buck circuit, the main circuit inductor... Connect the positive terminal of branch 1 to the inductor Between, inductance GaN HEMT1 devices, inductors The voltage sources are connected in series on the DC side in sequence. Between the positive terminal and the positive terminal of branch 1, branch 1 is used to connect the inductor. With DC side voltage source negative electrode.

[0052] In a high-frequency switching buck circuit, five GaN HEMT devices are distributed in three current loops. When the switching GaNHEMT1, GaN HEMT2, and GaN HEMT5 devices are simultaneously turned on, the DC-side voltage source... Main circuit inductor ,inductance ,inductance ,inductance ,inductance Inverter-side inductor and inductor Together they constitute the current The circuit, when the GaN HEMT1, GaN HEMT4, and GaN HEMT3 switching devices are simultaneously turned on, the DC-side voltage source... Main circuit inductor ,inductance ,inductance ,inductance ,inductance ,inductance ,inductance Inverter-side inductor ,inductance ,inductance Together they constitute the current circuit, such as Figure 3 and Figure 4 As shown.

[0053] Figures 1 to 4 The blue and yellow curves in the diagram represent the distribution of the magnetic field and induced magnetic field around the circuit, respectively. , , as well as Along the input current The direction is downward distributed, while the sensed , , and They then distribute upwards in the opposite direction. The specific distribution of the magnetic field and induced magnetic field around the high-frequency circuit is closely related to the asynchronous switching state of the five GaN HEMT switching devices.

[0054] In a high-frequency switching boost circuit, when GaN HEMT1 is turned on, a blue current flows through the circuit. Generate magnetic field When GaN HEMT2 and GaN HEMT5 are turned on, a blue current flows in the circuit. Generate magnetic field When GaN HEMT3 and GaN HEMT4 are turned on, a blue current flows in the circuit. Generate magnetic field Therefore, the magnetic field generated by the intermediate circuit is Conversely, when these devices are turned off, they generate a reverse yellow magnetic field. , , and .

[0055] In a high-frequency switching buck circuit, when GaN HEMT1, GaN HEMT2, and GaN HEMT5 are turned on, a blue current flows through the circuit. Generate magnetic field When GaN HEMT1, GaN HEMT3, and GaN HEMT4 are turned on, a blue current flows in the circuit. Generate magnetic field Therefore, the magnetic field generated by the intermediate circuit is Conversely, when GaN HEMT1 is off, a reverse yellow magnetic field will only be generated when GaN HEMT2 and GaN HEMT5 are on, and GaN HEMT3 and GaN HEMT4 are on simultaneously. , and .

[0056] High-frequency switching circuits, due to their full-bridge structure, have high inductance... The direction of the current in the DC-side voltage source is the same as that in the DC-side voltage source. Conversely, analyzing the circuit topology composed of multiple high-frequency devices and the distribution of coupled electromagnetic fields is very complex and requires discussion of each specific case.

[0057] The relationship between voltage and current coupling parameters in each loop of the high-frequency switching boost circuit is shown in formula (1):

[0058] (1);

[0059] The relationship between voltage and current coupling parameters in each loop of the high-frequency switching step-down circuit is shown in formula (2):

[0060] (2);

[0061] In the formula, Indicates the efficiency of the switching circuit. Indicates the input current. Indicates the output current. Represents current The induced current flowing through the circuit Represents current The induced current flowing through the circuit Represents current The induced current flowing through the circuit Indicates induced current In current The induced voltage in the circuit Indicates induced current In current The induced voltage in the circuit Indicates induced current In current The induced voltage in the circuit Indicates a loop;

[0062] , and These represent the rates of change of current in the three current loops, respectively. , , These represent the spatial magnetic field strength in the three current loops, respectively. , , These represent the induced magnetic field strengths in the three current loops, respectively. , , These represent the electric field strength in the three current loops, respectively. , , These represent the induced electric field strength in the three current loops, respectively.

[0063] The efficiency of high-frequency switching circuits and the rate of change of current in multiple loops , and and the strength of the space magnetic field , , and , , or electric field strength , , and , , The range of variation is closely related. Especially in high-frequency switching circuits, the electric field... With magnetic field They are mutually coupled. Over time... Changes in physical quantities in the circuit and They will appear alternately. This is achieved by spatially distributing the electric field. and magnetic field Replace with line integrals and substitute the electrical physical quantities over time. The dynamic changes in voltage mean that the output efficiency of a switching module, which functions as a complex high-frequency device, is closely related to the optimization process of circuit parameters. Traditional efficiency calculation formulas for switching circuits are related to the dynamic electrical parameters during actual circuit operation: input power is determined by voltage... Current and the output inductor Inductor current and inductor current It is measured by the rate of change over time. Among them, only inductance... It is a parameter that does not depend on the dynamic operating state of the circuit. Therefore, the traditional efficiency calculation process relies excessively on the electrical physical quantities under the circuit's operating state, which is far removed from the optimization process of circuit parameters.

[0064] This application uses Maxwell's equations to establish the spatial magnetic field distribution. Spatial electric field distribution With spatial change time High-frequency switching circuit frequency The relationship between space physical parameters is shown in formula (3).

[0065] (3);

[0066] In the formula, Represents the vector differential operator. Indicates electrical conductivity. Represents the dielectric constant. It represents the magnetic permeability.

[0067] To ensure maximum excitation at the output and avoid the effects of magnetic bias, the efficiency value of the switching circuit obtained by traditional calculation methods is based on the output inductance. Current flowing through This was derived under the condition that the device is in one of two switching states, i.e. However, the fast coupling parameter-efficiency analysis model proposed in this application is not limited by the operating state of the switching circuit and can be used... ,Right now Under certain conditions, parameter prediction is performed, and circuit efficiency is optimized.

[0068] Based on the above formula (1), the efficiency formula of the high-frequency switching boost circuit is derived as shown in formula (4);

[0069] (4).

[0070] Based on the above formula (2), the efficiency formula of the high-frequency switching step-down circuit is derived as shown in formula (5);

[0071] (5).

[0072] Based on the above theoretical derivation, by comparing the differences in calculation principles between the traditional circuit efficiency calculation method and the high-frequency fast coupling parameter-efficiency model method, the parameter prediction optimization strategies shown in formulas (6) and (7) are obtained:

[0073] (6);

[0074] (7);

[0075] In the formula, This indicates the efficiency of the high-frequency switching boost circuit. This indicates the efficiency of the high-frequency switching step-down circuit.

[0076] According to formulas (6) and (7), when At that time, the current The inductance parameter in the high-frequency switching circuit is less than the current. The inductance parameters in the circuit through which the current flows. At this point, the range of the maximum, intermediate, and minimum efficiency values ​​at the output of the high-frequency switching circuit can be predicted; when At that time, the current The inductance parameter in the high-frequency switching circuit is greater than the current. The inductance parameters in the circuit through which the current flows can also be used to predict the range of the maximum, intermediate, and minimum efficiency values ​​at the output of the high-frequency switching circuit.

[0077] like Figure 5 , Figure 6 As shown, in both switching modes, when the output current... and When the difference from the standard value of 10A is decreased and increased respectively, the fast-coupled parameter-efficiency analysis model significantly expands the efficiency range of the switching circuit compared to the traditional calculation method. Furthermore, this efficiency difference achieves a quantitative efficiency improvement, facilitating the rapid determination of the optimal efficiency value and parameter selection, and translating the efficiency error between the two methods (…). Figure 5 , Figure 6 The white area value in the image is reduced to a minimum.

[0078] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A method for electromagnetic field parameter-efficiency coupling analysis of switching circuits for multiple GaN HEMT devices, characterized in that: Includes the following steps: Step 1: Construct a high-frequency switching circuit consisting of multiple GaN HEMT devices connected in series and parallel; Step 2: Construct the relationship between voltage and current coupling parameters of the high-frequency switching circuit under different operating conditions; Step 3: Establish the spatial magnetic field distribution of the high-frequency switching circuit under different operating conditions using Maxwell's equations. Spatial electric field distribution With spatial change time High-frequency switching circuit frequency And the relationship between space physical parameters; Step 4: Based on Step 2 and Step 3, construct the coupling relationship between the parameters, build a fast coupled parameter-efficiency analysis model, use electromagnetic field to represent the efficiency of the high-frequency switching circuit, and predict the range of the maximum, intermediate and minimum efficiency values ​​at the output of the high-frequency switching circuit based on this efficiency.

2. The electromagnetic field parameter-efficiency coupling analysis method for switching circuits of multiple GaN HEMT devices according to claim 1, characterized in that: The overall architecture of the high-frequency switching circuit established in step one includes inductors. ,inductance ,inductance ,inductance ,inductance ,inductance ,inductance ,inductance ,inductance ,inductance Inverter-side inductor DC side voltage source GaN HEMT1 devices, GaN HEMT2 devices, GaN HEMT3 devices, GaN HEMT4 devices, GaN HEMT5 devices, and main circuit inductors; Furthermore, in the subsequent analyses of steps two through four, the high-frequency switching circuit topology is divided into two types: boost circuit and buck circuit. The main circuit inductance of the boost circuit is... The main circuit inductance of the step-down circuit is .

3. The electromagnetic field parameter-efficiency coupling analysis method for switching circuits of multiple GaN HEMT devices according to claim 2, characterized in that: In a high-frequency switching boost circuit, five GaN HEMT devices are distributed in three branches along with inductors, with the main circuit inductor being one of them. One end is connected to the DC voltage source Positive terminal, main circuit inductor The other end connects to one end of branch 1 and the inductor One end, inductor The other end connects to one end of branch 2 and the inductor One end, inductor The other end is connected to one end of branch 3, and the other ends of branches 1 / 2 / 3 are all connected to a DC voltage source. Negative extreme; branch 1 includes an inductor connected in series. GaN HEMT1 devices and inductors Branch 2 includes an inductor connected in series. GaN HEMT2 devices, inductors GaN HEMT3 devices and inductors Branch 3 includes an inductor connected in series. GaNHEMT4 devices, inductors GaN HEMT5 devices and inductors An inverter-side inductor is connected between the output terminal of the GaN HEMT2 device in branch 2 and the input terminal of the GaN HEMT5 device in branch 3. ; In a high-frequency switching boost circuit, five GaN HEMT devices are distributed across three current loops. When GaN HEMT1 is turned on, the DC-side voltage source... Main circuit inductor ,inductance ,inductance Together they constitute the current circuit, current Generate magnetic field When GaN HEMT1 is turned off and GaN HEMT2 and GaN HEMT5 are simultaneously turned on, the DC-side voltage source... Main circuit inductor ,inductance ,inductance Inverter-side inductor and inductor Together they constitute the current circuit, current Generate magnetic field When the GaN HEMT1 device is turned off and the GaN HEMT4 and GaN HEMT3 devices are simultaneously turned on, the DC-side voltage source... Main circuit inductor ,inductance ,inductance ,inductance ,inductance Inverter-side inductor ,inductance ,inductance Together they constitute the current circuit, current Generate magnetic field The magnetic field generated by the intermediate circuit is Conversely, when the current When the GaN HEMT1 device in the circuit is turned off, it generates a reverse induced magnetic field. When the current When the GaN HEMT1 device in the circuit is turned on and the GaN HEMT2 and GaN HEMT5 devices are turned off simultaneously, a reverse induced magnetic field is generated. When the current When the GaN HEMT1 device in the circuit is turned on and the GaN HEMT4 and GaN HEMT3 devices are turned off simultaneously, a reverse induced magnetic field is generated. The induced magnetic field generated by the intermediate circuit is .

4. The electromagnetic field parameter-efficiency coupling analysis method for switching circuits of multiple GaN HEMT devices according to claim 2, characterized in that: In a high-frequency switching buck circuit, five GaN HEMT devices are distributed across three branches along with inductors, with the main circuit inductor being the most prominent. Connect the positive terminal of branch 1 to the inductor Between, inductance GaN HEMT1 devices, inductors The voltage sources are connected in series on the DC side in sequence. Between the positive terminal and the positive terminal of branch 1, branch 1 is used to connect the inductor. With DC side voltage source negative electrode; inductance The other end connects to one end of branch 2, inductor One end, inductor The other end is connected to branch 3, and branch 2 includes an inductor connected in series. GaN HEMT2 devices, inductors GaN HEMT3 devices and inductors Branch 3 includes an inductor connected in series. GaN HEMT4 devices, inductors GaN HEMT5 devices and inductors An inverter-side inductor is connected between the output terminal of the GaN HEMT2 device in branch 2 and the input terminal of the GaN HEMT5 device in branch 3. ; In a high-frequency switching buck circuit, five GaN HEMT devices are distributed in three current loops. When GaN HEMT1, GaN HEMT2, and GaN HEMT5 devices are simultaneously turned on, the DC-side voltage source... Main circuit inductor ,inductance ,inductance ,inductance ,inductance Inverter-side inductor and inductor Together they constitute the current circuit, current Generate magnetic field When GaN HEMT1, GaN HEMT4, and GaN HEMT3 devices are simultaneously turned on, the DC-side voltage source... Main circuit inductor ,inductance ,inductance ,inductance ,inductance ,inductance ,inductance Inverter-side inductor ,inductance ,inductance Together they constitute the current circuit, current Generate magnetic field The magnetic field generated by the intermediate circuit is Conversely, when the current When the GaN HEMT1, GaN HEMT2, and GaN HEMT5 devices in the circuit are simultaneously turned off, a reverse induced magnetic field is generated. When the current When the GaN HEMT1, GaN HEMT4, and GaN HEMT3 devices in the circuit are simultaneously turned off, a reverse induced magnetic field is generated. The induced magnetic field generated by the intermediate circuit is .

5. The electromagnetic field parameter-efficiency coupling analysis method for switching circuits of multiple GaN HEMT devices according to claim 3, characterized in that: The relationship between voltage and current coupling parameters in each loop of the high-frequency switching boost circuit is as follows: ； In the formula, Indicates the efficiency of the switching circuit. Indicates the input current. Indicates the output current. Represents current The induced current flowing through the circuit Represents current The induced current flowing through the circuit Represents current The induced current flowing through the circuit Indicates induced current In current The induced voltage in the circuit Indicates induced current In current The induced voltage in the circuit Indicates induced current In current The induced voltage in the circuit Indicates a loop; , and These represent the rates of change of current in the three current loops, respectively. , , These represent the spatial magnetic field strength in the three current loops, respectively. , , These represent the induced magnetic field strengths in the three current loops, respectively. , , These represent the electric field strength in the three current loops, respectively. , , These represent the induced electric field strength in the three current loops, respectively.

6. The electromagnetic field parameter-efficiency coupling analysis method for switching circuits of multiple GaN HEMT devices according to claim 4, characterized in that: The relationship between voltage and current coupling parameters in each loop of the high-frequency switching buck circuit is as follows: ； In the formula, Indicates the efficiency of the switching circuit. Indicates the input current. Indicates the output current. Represents current The induced current flowing through the circuit Represents current The induced current flowing through the circuit Indicates induced current In current The induced voltage in the circuit Indicates induced current In current The induced voltage in the circuit Indicates a loop; and They represent currents respectively. , The rate of change of current in the circuit, , They represent currents respectively. , The spatial magnetic field strength in the circuit, , They represent currents respectively. , The intensity of the induced magnetic field in the circuit, , They represent currents respectively. , The electric field strength in the circuit, , They represent currents respectively. , The intensity of the induced electric field in the circuit.

7. The electromagnetic field parameter-efficiency coupling analysis method for switching circuits of multiple GaN HEMT devices according to claim 5, characterized in that: The efficiency of the high-frequency switching boost circuit represented by the electromagnetic field in the fast coupling parameter-efficiency analysis model is as follows: ； In the formula, This indicates the efficiency of the high-frequency switching boost circuit.

8. The electromagnetic field parameter-efficiency coupling analysis method for switching circuits of multiple GaN HEMT devices according to claim 6, characterized in that: The efficiency of the high-frequency switching buck circuit represented by the electromagnetic field in the fast coupling parameter-efficiency analysis model is as follows: ； In the formula, This indicates the efficiency of the high-frequency switching step-down circuit.

9. A method for electromagnetic field parameter-efficiency coupling analysis of switching circuits for multiple GaN HEMT devices according to claim 7 or 8, characterized in that: Current The inductance parameter in the high-frequency switching circuit is less than the current. When considering the inductance parameters in the circuit, the range of maximum, intermediate, and minimum efficiency values ​​at the output of the high-frequency switching circuit can be predicted using the efficiency formulas for either the high-frequency switching boost circuit or the high-frequency switching buck circuit.

10. A method for electromagnetic field parameter-efficiency coupling analysis of a switching circuit for multiple GaN HEMT devices according to claim 7 or 8, characterized in that: Current The inductance parameter in the high-frequency switching circuit is greater than the current. When considering the inductance parameters in the circuit, the range of maximum, intermediate, and minimum efficiency values ​​at the output of the high-frequency switching circuit can be predicted using the efficiency formulas for either the high-frequency switching boost circuit or the high-frequency switching buck circuit.

Images