An rgb triangle dynamic full-spectrum quantum chip system based on a full-energy engineering model

Abstract

The application discloses an RGB triangular dynamic full-spectrum quantum chip system based on a full-field energy engineering model, and belongs to the field of optical quantum chips and topological quantum information. The application adopts a thin film lithium niobate substrate to prepare a regular triangular topological lattice, and heterogeneously integrates near-infrared, visible light and ultraviolet three-band three-level quantum units at the vertices, which respectively map information domains, energy domains and structure domains, and support balanced ternary coding; through side edge interdigital transducers, surface acoustic waves are excited to realize sound-mediated three-body long-distance effective coupling under large detuning; a built-in chip-level full-field energy engineering model and time-scale compensation algorithm are combined with a non-Hermitian architecture to actively offset de-coherence. The GHZ entanglement preparation rate of the application is more than 8 times higher than that of a one-dimensional two-body cascade scheme, and the coherence time can reach 40 mu s after normal temperature compensation, so that the application can be applied to quantum secure communication, precise inertial sensing and other scenes.

Description

[0001] This invention belongs to the fields of optical quantum chip fabrication, topological quantum information processing, full-spectrum quantum control and quantum precision sensing technology. Specifically, it relates to a full-spectrum ternary general-purpose quantum chip system based on chip-level full-domain energy engineering principles and the IES three-domain commutation architecture, and adopting a thin-film lithium niobate triangular lattice acoustic-mediated three-body coupling structure. It can be adapted to various engineering scenarios such as quantum secure communication, quantum inertial sensing, and quantum signal processing. Background Technology

[0002] In the post-Moore's Law era, the quantum information industry is rapidly being implemented, and optical quantum chips, with their advantages of room temperature compatibility, high integration, and wide spectral adaptability, have become the core carrier for the engineering of quantum technology. However, existing commercial and laboratory optical quantum chips still face four major technological bottlenecks:

[0003] 1. The spectral adaptation structure is simple and the coding efficiency is limited by binary: Most existing quantum bits are two-level systems that only support binary coding, and there is a theoretical upper limit to the information density of a single bit; moreover, most chips are designed for a single narrow frequency band and cannot simultaneously cover multiple bands such as near-infrared, visible light, and ultraviolet light, making it difficult to adapt to the needs of broadband quantum communication and multi-dimensional precision detection.

[0004] 2. Coupling architecture is limited to near-range two-body coupling, resulting in low efficiency of multi-body entanglement: Existing chips generally adopt a one-dimensional linear arrangement of near-neighbor two-body coupling structures, which realize two-qubit interactions based on the Jaynes-Cummings model. The coupling depends on the overlap of wave function space and is only applicable to quantum dots with a spacing of tens of nanometers. Entanglement of three-body or more bodies needs to be achieved through cascading of multi-level gate operations. The entanglement preparation rate is slow and the fidelity loss is large. There is a lack of efficient implementation schemes for long-range multi-body coupling.

[0005] 3. Weak environmental interference resistance and high dependence on low temperature environment: The existing quantum chip control logic is mostly designed based on the ideal Hermitian model and has not designed a systematic compensation mechanism for actual working conditions such as temperature drift, lattice deformation and electromagnetic noise; the coherence time of semiconductor quantum dots at room temperature is only a few microseconds, and most high-precision scenarios require liquid helium refrigeration system, which is difficult to adapt to non-laboratory scenarios such as field and airborne.

[0006] 4. Insufficient precision in energy regulation and lack of a unified multi-domain optimization framework: Traditional chip power consumption management is based on classical dynamic power consumption formulas, which do not couple multiple physical field factors such as topological phase, phonon coupling, and quantum decoherence. The dynamic power consumption calculation error reaches 15% to 20%. Moreover, it cannot achieve global synergistic optimization of information rate, energy efficiency, and structural stability, making it difficult to balance performance and energy efficiency.

[0007] At the process implementation level, monolithic integration of quantum dots of multiple materials is a common challenge in the industry: III-V group quantum dots, perovskite quantum dots, and nitride quantum dots have large differences in growth temperature and lattice mismatch, making it impossible to prepare them simultaneously on the same substrate through in-situ growth; existing solutions mostly use single-material quantum dot arrays, which makes it difficult to achieve wide-spectrum multi-level coordinated control.

[0008] At the level of fundamental theory, the classical mass-energy equivalence equation is only applicable to ideal closed systems and cannot be combined with chip topology and multi-physics field losses to complete on-site parameter correction; the IES three-domain commutation theory has been verified in general-purpose computing chips and four-network converged chips, but has not yet been applied to the field of quantum chips; the chip-level global energy engineering principle has formed a complete framework in macroscopic gravity and chip-level power consumption modeling, but has not yet been coupled with quantum topology to form a unified control model. Summary of the Invention

[0009] 3.1 Technical problems to be solved

[0010] In view of the above-mentioned deficiencies in the prior art, the present invention aims to solve the following core technical problems:

[0011] 1. Break through the information density bottleneck of two-level binary encoding, construct a balanced ternary encoding mapping scheme based on three-level quantum units, and improve the information carrying capacity of a single bit;

[0012] 2. To address the shortcomings of multi-body entanglement efficiency in close-range two-body coupling, effective long-range coupling of three bodies under large detuning is achieved through surface acoustic wave mediation, enabling single-step direct fabrication of GHZ states;

[0013] 3. To alleviate the room-temperature decoherence problem, a time-multiscale non-Hermitian compensation mechanism is introduced to extend the quantum coherence time over a wide temperature range;

[0014] 4. To solve the technological challenges of monolithic integration of multi-material quantum units, a heterogeneous transfer assembly scheme was adopted to achieve the co-integration of three-band quantum units on a lithium niobate substrate;

[0015] 5. Improve the accuracy of energy management and control, and implement the chip-level global energy engineering model into a chip-level control tool to achieve global optimal scheduling of information, energy and structure domains.

[0016] 3.2 Core Theoretical Principles

[0017] This invention constructs a complete technical solution based on three types of verified physical and engineering theories. All criteria are supported by existing research and contain no fictitious assumptions.

[0018] Guideline 1: IES Three-Domain Collaborative Optimization Architecture Guideline

[0019] Information (I), energy (E), and spatial structure (S) are the three core, mutually coupled engineering dimensions that constitute a quantum chip system. These three elements jointly determine the overall performance of the system, and global Pareto optimality can be achieved through multi-parameter closed-loop control. The upper limit of the overall system performance is determined by the synergistic product of these three elements. .

[0020] ● Information Domain I: Corresponds to the quantum information encoding, transmission and processing capabilities, mapped to long-wavelength R quantum units, with the core indicators being encoding fidelity and path accuracy;

[0021] ● Energy domain E: corresponds to energy level regulation, energy conversion and coupling efficiency, mapped to the mid-wave G quantum unit, with the core indicators being coupling strength and energy consumption efficiency;

[0022] ● Structural domain S: corresponds to topological phase, structural deformation and sensing accuracy, and is mapped to short-wavelength B quantum unit. The core indicators are topological order parameter stability and sensing sensitivity.

[0023] The three factors are at 120° angles to each other in the resource space. Maximizing their product is equivalent to Pareto optimality for multiple indicators, without the need for manual weighting.

[0024] Note: This architecture is an engineering optimization framework and does not involve quantum mechanical commutation relations. The three domains are independently controllable dimensions at the engineering level.

[0025] Criterion 2: Global Energy Engineering Criterion

[0026] The total energy consumption of any chip system can be uniformly described by superimposing multi-domain correction coefficients on the baseline power consumption. The correction terms include four categories: temperature, structure, information loss and spectral coupling. All correction terms are dimensionless coefficients and do not violate dimensional consistency.

[0027] This criterion is an engineering phenomenological model based on the power consumption law of CMOS process and the fitting of multi-physics field loss. Its core function is to realize the rapid real-time measurement and optimization of chip power consumption without rewriting the basic physical laws. It has been verified in ternary computing chips and thrust array systems (hereinafter referred to as the domain energy balance model).

[0028] Criterion 3: Tao Time Multi-Scale Correction Criterion

[0029] The energy and phase evolution of a dynamic system are influenced by three timescale couplings: relative phase time (corresponding to oscillation period matching), normalized diffusion time (corresponding to thermal diffusion hysteresis), and absolute accumulation time (corresponding to long-term aging decay). The product of these three factors constitutes the Tao function. This method can accurately describe the dynamic process of multi-timescale coupling. Based on diffusion dynamics and Arrhenius's law, this criterion has been verified in the thrust array combustion energy release model. This invention extends it to the quantum phase decoherence compensation scenario.

[0030] 3.3 Overall Technical Solution

[0031] This invention adopts a five-layer architecture of "lattice-unit-coupling-regulation-compensation", and the core technical solution is as follows:

[0032] 1. Corner topological lattice layer: An equilateral triangular closed-loop topological lattice with a lattice constant of 1.5 μm is prepared on an X-cut thin-film lithium niobate substrate. Three types of three-level quantum units of R, G, and B are arranged at the three vertices respectively, and the I, E, and S domains are mapped respectively. Balanced ternary (-1,0,1) encoding is supported through energy level mapping.

[0033] Process boundary description: The main crystal lattice is fabricated using CMOS-compatible photolithography and etching processes; the three types of quantum units are heterogeneously integrated using high-precision transfer printing technology, rather than in-situ growth, to avoid the incompatibility issues of different material growth processes.

[0034] 2. Three-body acoustic coupling layer: Aluminum interdigital transducers are fabricated on the side of a triangular lattice to excite surface acoustic waves of 2.5–7.5 GHz. Through periodic strain modulation of surface acoustic waves, nonlocal virtual phonon-mediated long-range effective coupling of three quantum units is achieved under large detuning conditions, breaking through the efficiency limit of one-dimensional two-body nearest-neighbor coupling.

[0035] Physical boundary description: The three-body coupling described in this scheme is a virtual phonon-mediated effective coupling under large detuning conditions, which is realized based on the third-order perturbation theory. The coupling strength decreases quadratically with the increase of the unit spacing. It operates in the weak coupling range and is suitable for multi-body entanglement preparation and precision sensing. It does not belong to the category of strong coupling.

[0036] Multispectral driving layer: equipped with three independent tunable laser driving sources, each corresponding to the transition band of the three quantum units, to realize energy level control, state preparation and encoding loading;

[0037] Global energy regulation layer: It has a built-in chip-level global energy model, which extracts power supply noise and clock jitter characteristics through Fourier spectrum analysis, dynamically corrects the effective activity factor, and combines three types of loss coefficients of temperature, structure and information to achieve accurate power consumption calculation and energy efficiency optimization.

[0038] 3. Tao Time Compensation Layer: Introduces a three-layer time scale correction of the Tao function, combined with the non-Hermitian extension of the complex domain topological parameters, to actively compensate for phase drift, thermal hysteresis and aging decay, thereby improving coherence time and stability at room temperature.

[0039] Encoding boundary explanation: The ternary system described in this scheme is an energy level mapping at the information encoding level, that is, three energy levels correspond to three logical encoding states respectively. It belongs to the architecture optimization at the quantum information encoding level and does not break the basic principles of quantum mechanics.

[0040] Topological boundary description: The topological lattice described in this scheme utilizes Berry phase to enhance transmission robustness, which can improve the ability to resist interference from local defects, but it does not have the immune characteristics of strict topological protection, and its performance will degrade under non-Hermitian strong noise.

[0041] 3.4 Main Symbols Reference Table

[0042] The main symbols, physical meanings, and units involved in the core formulas of this invention are consistent as follows, and the symbols throughout the text are consistent and unambiguous:

[0043]

[0044] 3.5 Beneficial Technical Effects

[0045] Compared with existing one-dimensional two-body photonic quantum chips manufactured using the same technology, this invention has the following quantifiable advantages:

[0046] 1. Significantly improved multi-body entanglement efficiency: Effective long-range coupling of three bodies enables the direct preparation of GHZ states in a single step, increasing the generation rate by more than 8 times compared to the one-dimensional two-body two-level cascade scheme, while maintaining entanglement fidelity above 98%, avoiding the cumulative loss of fidelity in multi-level gate operations;

[0047] 2. Intrinsic Enhancement of Information Density: Three-level quantum units are mapped to balanced ternary encoding, achieving a single-bit information entropy of [missing information]. This represents a 58.5% improvement over binary qubits and allows for native integration with ternary computing systems.

[0048] 3. Enhanced coherence over a wide temperature range: Multi-scale non-Hermitian compensation of time improves the coherence time at room temperature (298 K) from 6 μs without compensation to over 40 μs, an improvement of about 6.7 times; the performance fluctuation is less than ±12% over a wide temperature range of -40℃ to 85℃, reducing refrigeration dependence;

[0049] 4. Significant improvement in energy efficiency management accuracy: The chip-level global energy engineering model reduces the dynamic power consumption calculation error from the traditional 15% to 20% to less than 2.5%. Combined with IES product optimization scheduling, the system energy efficiency is improved by more than 40% compared with the traditional solution.

[0050] 5. Strong process compatibility: The heterogeneous transfer assembly scheme realizes the co-integration of quantum units of multiple materials. The main process is compatible with existing CMOS production lines and thin-film lithium niobate preparation processes. The parameters can be calibrated and reproduced, and it supports 8-inch wafer-level mass production. Attached Figure Description

[0052] Figure 1 Schematic diagram of the overall structure layout of the quantum chip of this invention Labeling: 1 - Thin-film lithium niobate substrate; 2 - Equivalent triangular closed-loop topological lattice structure; 3a - Long-wavelength R quantum unit (information domain I); 3b - Mid-wavelength G quantum unit (energy domain E); 3c - Short-wavelength B quantum unit (structural domain S); 4 - Interdigitated surface acoustic wave transducer; 5 - Multispectral drive module; 6 - Phase detection calibration module; 7 - Environmental parameter acquisition module; 8 - Main controller; 9 - Quantum state readout module.

[0053] Figure 2 Schematic diagram of the mapping relationship between the closed integral path of the equilateral triangular lattice and IES Notation: 2 - Equivalent triangular closed-loop topological lattice structure; C - Counterclockwise closed integral path; a - Lattice constant; R / G / B - Correspondence between the three-vertex quantum unit and the I / E / S domain.

[0054] Figure 3 Schematic diagram of the phonon field excitation structure of the interdigital transducer Labeling: 1 - Lithium niobate substrate; 4 - Interdigitated surface acoustic wave transducer; 4a - Driving voltage source; 10 - Surface acoustic wave propagation direction; 3a / 3b / 3c - R / G / B quantum units within the phonon field path.

[0055] Figure 4 Topological parameters On-site calibration hardware optical path connection diagram Labeling Explanation: 8 - Main controller; 6a - Mach-Zehnder interferometer; 6b - Liquid crystal adjustable delay unit; 6c - Photodetector; 11 - Frequency-stabilized laser input source; Arrows indicate the direction of optical path transmission and the direction of electrical signal feedback.

[0056] Figure 5 IES Three-Domain Cooperative Scheduling and Energy Optimization Architecture Diagram Labeling Explanation: 12 - Information Domain Processing Unit; 13 - Energy Domain Management Unit; 14 - Structural Domain Sensing Unit; 15 - Energy Engineering Calculation Unit; 16 - Time Compensation Unit; 17 - IES Product Optimizer. Detailed Implementation

[0057] The present invention will be further described in detail below with reference to the accompanying drawings, formula derivations, and specific embodiments. These embodiments are for illustrative purposes only and are not intended to limit the scope of protection. Those skilled in the art can reproduce the core functions without creative effort based on the process parameters and circuit structure disclosed in this invention.

[0058] 5.1 Derivation and Physical Interpretation of Core Formulas

[0059] This chapter provides a rigorous derivation of all core formulas in the claims, clarifying their physical meaning, applicable conditions, and dimensional verification. All derivations are based on recognized physical theories and engineering fitting methods, without defining any fundamental physical laws.

[0060] 5.1.1 Topological Coupling Order Parameter Derivation

[0061] Physical Background and Theoretical Origins: In topological lattices, the phase accumulation generated by the exciton wavefunction moving along a closed path is determined by the Berry connection, directly affecting the coupling strength between quantum units. This invention normalizes the topological phase effect of triangular lattices into a dimensionless order parameter, which serves as an engineering correction coefficient for coupling strength. The core theory originates from the fundamental definition of Berry phase in topological quantum mechanics.

[0062] Step-by-step derivation process:

[0063] According to the fundamental definition of topological quantum mechanics, the Berry phase acquired by a particle moving along a closed path C in k-space is:

[0064]

[0065] in For Berry connection vector, Let be the Bloch wave function under a periodic potential field; the integral is performed along a closed path C in k-space. Let be the differential line element vector of the k-space path. The integral result is the dimensionless geometric phase, with the auxiliary unit being radians (rad).

[0066] For an equilateral triangular topological lattice, under the standard distortion-free condition, the Berry phase at point K in the first Brillouin zone is the standard value. This corresponds to the standard coupling strength. For ease of engineering calibration, it is normalized to a dimensionless order parameter:

[0067]

[0068] Under the reference operating conditions When the crystal lattice deforms or the temperature changes, the Berry connection changes. The resulting shift can be calibrated using interference optical paths.

[0069] Applicable conditions: This order parameter is applicable to the range of weak distortion and linear deformation. When the lattice deformation exceeds 10%, a higher-order correction needs to be introduced.

[0070] Dimensional verification: Both the numerator and denominator are dimensionless phases, and the order parameter is a dimensionless coefficient, ensuring strict dimensional consistency.

[0071] 5.1.2 Derivation of Chip-Level Global Energy Engineering Model

[0072] Physical Background and Model Positioning: The classic CMOS dynamic power consumption formula only considers ideal switching losses and cannot reflect the effects of multi-domain coupling such as noise, temperature, and structure. This invention uses the classic dynamic power consumption formula as a baseline, superimposes multi-domain dimensionless correction terms, and constructs an engineering phenomenological energy consumption model. Its core function is to achieve millisecond-level rapid calculation and closed-loop optimization of chip power consumption without changing the fundamental physical laws of circuit power consumption.

[0073] Step-by-step derivation process:

[0074] 1. Baseline power consumption: The classic dynamic power consumption formula is:

[0075]

[0076] in This is a static activity factor, representing the proportion of switches switching per unit time.

[0077] 2. Fourier Spectrum Correction: Power supply noise and clock jitter cause additional charging / discharging and timing retries, increasing the effective activity factor. The dominant noise frequency is extracted using Fast Fourier Transform. With jitter-dominant frequency System master clock frequency Construct effective activity factors:

[0078]

[0079] in This is a process calibration constant, typically ranging from 0.05 to 0.1, obtained through wafer-level testing and calibration.

[0080] 3. Multi-domain loss correction:

[0081] Temperature correction Based on the Arrhenius equation, describe the effect of junction temperature on leakage current and carrier mobility:

[0082]

[0083] in Carrier activation energy, typical value This is a reference temperature.

[0084] Structural correction : Describes the additional power consumption caused by lattice deformation and interconnect delay, calibrated by physical design parameters, typically ranging from 0.85 to 1.15.

[0085] Information Correction : Describes the additional power consumption caused by quantum state error correction and coding redundancy, calibrated by load characteristics, with a typical range of 0.90 to 1.10.

[0086] 1. Topology Coupling Correction: Introducing Topology Order Parameters This describes the modulation effect of topological phase on overall energy consumption.

[0087] 2. Time-varying relaxation correction: Introducing the time-varying relaxation function. Describes the dynamic response of the system from standby to full load, satisfying first-order dynamics:

[0088]

[0089] in This is the power supply loop time constant, typically ranging from 10 to 100 ns.

[0090] The final complete chip-level energy model is obtained:

[0091]

[0092] Energy consumption per unit time This is completely consistent with the expression in claim 1.

[0093] Applicable conditions: This model is applicable to CMOS digital circuits and mixed-signal circuits, with a working frequency range of... The junction temperature range is -55℃ to 125℃.

[0094] Dimensional verification: The dimensions of the baseline term are All correction factors are dimensionless, and the final output is in power units, with strictly self-consistent dimensions.

[0095] 5.1.3 Derivation of Total Hamiltonian and Three-Body Coupling Strength

[0096] Physical Background and Theoretical Origins: Surface acoustic wave-mediated quantum unit coupling is essentially the alteration of quantum unit transition energy levels by periodic strain modulation of the phonon field, achieving long-range effective coupling through virtual phonon exchange. Under large detuning conditions, the virtual phonon degrees of freedom can be eliminated by adiabatic elimination integration, yielding an effective Hamiltonian containing only spin operators. This is the standard form for describing weak coupling interactions in quantum optics, originating from third-order perturbation theory and extensions of the Tavis-Cummings model.

[0097] Key boundary description: Traditional quantum perturbation theory can accurately describe this three-body entanglement mechanism, but the pure theoretical computation is too complex and cannot be used for real-time control; the innovation of this invention lies in establishing a phenomenological correlation between coupling strength and topological order parameters and process parameters, so as to achieve rapid engineering estimation.

[0098] Step-by-step derivation process:

[0099]

[0100] 1. Single-particle term: The eigenenergy of three quantum units is Pauli The operator is represented as:

[0101]

[0102] The original Hamiltonian of the phonon-quantum dot interaction: The interaction between the surface acoustic wave phonon field and the three quantum dots satisfies the Jaynes-Cummings form:

[0103] in For single-bit coupling strength, To generate operators for phonons.

[0104] Large detuning adiabatic elimination: when the detuning amount Then, by adiabatically eliminating the virtual phonon degrees of freedom using third-order perturbation theory, we obtain the three-body effectively coupled Hamiltonian containing only energy level operators:

[0105]

[0106] Coupling strength The coupling strength is proportional to the product of the Rabi frequencies of the three elements and inversely proportional to the square of the detuning; it is also modulated by the element spacing, with the coupling strength decreasing with the square of the element spacing. A three-body topology correction factor is introduced. The result was:

[0107]

[0108] This formula conforms to the basic laws of third-order perturbation in quantum optics and is only applicable to scenarios with large detuning and weak coupling.

[0109] 3. Non-Hermitian compensation term: To offset environmental dissipation, a non-Hermitian gain term is introduced, which is actively adjusted to compensate for decoherence.

[0110]

[0111] in The gain coefficient is matched in real time by the environmental dissipation rate.

[0112] The total Hamiltonian is the sum of the three, which is completely consistent with the expression in claim 3.

[0113] Applicable conditions: Large detuning and weak coupling range, the detuning amount is much greater than the Rabi frequency, the phonon coherence length is greater than the element spacing; the coupling strength decreases quadratically with the increase of the element spacing.

[0114] Key boundary description: Traditional quantum perturbation theory can accurately describe this three-body entanglement mechanism, but the pure theoretical computation is too complex and cannot be used for real-time control; the innovation of this invention lies in establishing a phenomenological correlation between coupling strength and topological order parameters and process parameters, so as to achieve rapid engineering estimation.

[0115] 5.1.4 Physical Explanation of Topological Order Parameter Calibration Formula Topological Coupling Order Parameters There are two levels of expression: the theoretical definition describes the physical essence, and the engineering calibration realizes on-site measurability. The two are at different levels and have different applicable scenarios, but they are completely self-consistent.

[0116] In practical engineering applications, in order to uniformly describe the real eigenvalues ​​and imaginary non-Hermitian dissipations of topological order parameters, complex domain correction parameters are introduced. As a representation of complex domain extension, and satisfying engineering mapping relationships This mapping relationship has the same dimensions as the subsequent non-Hermitian compensation term.

[0117] 5.1.4.1 Imaginary part dissipation coefficient Engineering acquisition path The non-Hermitian complex domain correction parameter as described in claim 5 In the middle, the dissipation coefficient of the imaginary part It is a key engineering parameter used to quantify the attenuation of quantum coherence caused by external environmental noise and temperature fluctuations. It is not a product of fundamental physical laws, but rather an engineering phenomenological model constructed through frequency domain convolution integrals. Its engineering calculation formula is:

[0118]

[0119] In the formula, The noise power spectral density is obtained by real-time acquisition and FFT transformation of environmental parameter acquisition module; For quantum lattice systems targeting frequencies of The equivalent amplitude-frequency response function of the disturbance; It is a dimensionless engineering calibration constant (obtained by experimental calibration using wafer-level standard samples, with a typical value range of 0.8 to 1.2).

[0120] In actual operation, the main controller utilizes its built-in FFT acceleration unit to discretize the integral for rapid numerical solution, thereby supporting millisecond-level real-time dynamic processing. Compensation enables the active offsetting of non-Hermitian dissipation.

[0121] 1. The correspondence between the two formulas The theoretical definition directly reflects the physical nature of the Berry phase, but it cannot be directly measured in mass production. The engineering calibration formula, through measurable exciton transition frequency shift and the relative change of equivalent inverse order parameters, is the engineering realization of industrial in-situ detection.

[0122] 2. Step-by-step derivation of the calibration formula

[0123] (1) The basic relationship between exciton energy and frequency: According to the photon energy formula, the exciton transition energy level and the transition frequency satisfy the following: Where E is the exciton transition energy. This is the transition angular frequency.

[0124] (2) Energy shift under small deformation: When the crystal lattice undergoes small elastic deformation, the equivalent potential energy of excitons changes. Excitons are quasi-particles composed of electron-hole pairs in semiconductors, and their effective mass... It needs to be pre-calibrated using wafer-level standard samples. The values ​​are different for different material systems. Based on the approximation of the effective mass of semiconductor excitons, the relative change of energy and the relative change of frequency are linearly related within the small deformation range. The formula uses an equivalent analogy to fit this linear relationship. In form, it refers to the dimensional structure of the mass-energy equivalence equation, but in essence, it is a linear mapping of experimental calibration.

[0125] (3) Equivalent mapping of topological order parameter: Within the small deformation range, the relative change of Berry phase is linearly positively correlated with the relative change of exciton energy level (the linear correlation coefficient ≥ 0.98 is determined by wafer-level experimental calibration). Therefore, the relative shift of topological order parameter is proportional to the relative shift of energy.

[0126] Under the reference operating conditions After combining the equations, we obtain the final calibration formula:

[0127]

[0128] By altering the optical path difference of the topological optical path through interference optical path scanning, the frequency offset of the quantum unit is collected. Complete on-site precise calibration and real-time parameter updates; among which The equivalent mass of the exciton quasiparticle. For the speed of light, this form is an engineering equivalent calibration formula, based on the relativistic energy-momentum relationship, which maps the exciton frequency shift to the change in the effective static mass of the topological junction. This has been verified through wafer-level experimental calibration. 3. Applicable Boundaries and Attribute Description Dimensionality check: Both the numerator and denominator are energy units, and the second term is a dimensionless coefficient. It is a dimensionless value, which is completely consistent with the dimensions of the definition. Applicable boundary: It is only applicable to the small deformation range of lattice deformation ≤10%. Beyond the range, the linear relationship fails and a higher-order correction term needs to be introduced. Attribute Description: This formula is an equivalent fitting formula based on engineering measurements. Its core function is to achieve rapid, non-destructive detection of topological order parameters without the need for complex quantum state tomography measurements, making it suitable for in-situ calibration scenarios in industrial mass production; the exciton equivalent mass in the formula... It needs to be pre-calibrated using wafer-level standard samples, and the values ​​will vary depending on the material system.

[0129] 5.1.5 Derivation of the Tao Time Non-Hermitian Compensation Model

[0130] Physical Background: Quantum decoherence is affected by three types of timescale coupling: phonon oscillation phase mismatch (nanosecond level), thermal diffusion temperature drift (microsecond level), and long-term device aging (hour level). This invention introduces a three-layer structure of the Tao function, corresponding to the three types of attenuation mechanisms, to achieve unified compensation for multi-scale decoherence.

[0131] Step-by-step derivation process:

[0132] The Tao function consists of three products, each corresponding to one of three time scales:

[0133]

[0134] 1. Phase-time term (relative time): corresponds to the phase-matching efficiency between phonon oscillation and quantum unit, normalized time. Under steady state, this term converges to 1, and a phase correction is generated when there is dynamic detuning.

[0135] 2. Thermal diffusion term (normalized time): corresponds to the thermal diffusion hysteresis effect of temperature drift, Fourier number: ( For thermal diffusivity, For film thickness, (For time), the original linear relationship is corrected to a square root relationship in the standard diffusion kinetics, which conforms to Fick's diffusion law:

[0136]

[0137] in This is the thermal diffusivity correction factor, with typical values ​​ranging from 0.08 to 0.15.

[0138] 3. Absolute time term (aging time): corresponds to the long-term performance degradation of the device, constructed based on Arrhenius's law:

[0139]

[0140] in This is a reference value for the rated lifespan. This represents the aging factor.

[0141] By using the Tao function to correct the coupling phase and gain coefficient in real time, accurate compensation for multi-scale decoherence can be achieved.

[0142] Applicable conditions: Suitable for decoherence compensation of optical quantum chips operating in the range of room temperature to 85℃, with a prediction error of ≤15%.

[0143] 5.2 Detailed Implementation of Hardware System

[0144] 5.2.1 Substrate and Triangular Lattice Structure

[0145] Using commercially available X-cut thin-film lithium niobate wafers as the substrate, the structure is “725μm silicon substrate + 2μm SiO2 buried oxide layer + 180 nm lithium niobate thin film”, which is compatible with 8-inch wafer mass production processes.

[0146] A triangular closed-loop topological lattice array with a lattice constant a = 1.5 μm and an array size of 20 × 20 triangular units was fabricated using electron beam lithography and inductively coupled plasma etching (ICP-CED). The units were cascaded through shallow-etched waveguides. The lattice etching depth was 80 nm, forming periodic refractive index modulation. Berry phase was used to enhance the robustness of boundary state propagation, thereby improving the resistance to interference from local defects.

[0147] 5.2.2 RGB Three-Domain Three-Level Quantum Unit

[0148] The three vertices integrate three types of three-level quantum units, corresponding to the mapping between the three domains of IES and the balanced ternary logic state. Co-integration is achieved using a heterogeneous transfer printing process, rather than in-situ growth, to avoid the problem of incompatibility between different material growth processes.

[0149] ● R-unit (information domain I, logic state -1 / 0 / +1): It adopts a pre-prepared nm / s quantum dot unit with a size of 2-3 nm and an emission center wavelength of 980 nm (near-infrared long wave). It achieves three-level tuning through the quantum confinement Stark effect and is used for quantum information encoding and transmission.

[0150] ● G unit (energy domain E, logic states -1 / 0 / +1): It adopts a pre-prepared CsPbBr3 perovskite quantum dot unit with a size of 35 nm and an tunable emission wavelength of 450 nm to 650 nm (mid-wave visible light). The energy level is controlled by temperature tuning and used for dynamic adjustment of coupling strength.

[0151] ● B unit (structural domain S, logic states -1 / 0 / +1): Employs pre-prepared AlGaN quantum dot units with a size of 2-3 nm and an emission center wavelength of 260 nm (short-wave ultraviolet), corresponding to topological phase sensing, used for lattice deformation and acceleration detection.

[0152] Three types of quantum units were precisely assembled at the lattice vertices using high-precision dielectrophoretic transfer printing technology, with a positioning error of ≤±50 nm, ensuring coupling symmetry. The assembly process was carried out at low temperature to avoid damage to the lithium niobate substrate and other quantum units caused by high-temperature processes.

[0153] 5.2.3 Surface Acoustic Wave Excitation and Coupling Unit

[0154] An aluminum interdigitated surface acoustic wave transducer (IDT) was fabricated on the side of a triangular lattice. The electrode width was 0.2 μm and the spacing was 0.3 μm. There were a total of 32 pairs of electrodes. The electrode was deposited by electron beam evaporation with a thickness of 100 nm.

[0155] When an alternating voltage is applied to the transducer, surface acoustic waves propagating along the X-axis are excited through the inverse piezoelectric effect, with a sound velocity of... The frequency range is adjustable from 2.5 to 7.5 GHz. All three quantum units are located on the main propagation path of surface acoustic waves. The transition energy levels are changed by periodic strain modulation, and virtual phonon-mediated long-range effective coupling is achieved under large detuning conditions.

[0156] The amplitude of the phonon field can be controlled by adjusting the driving voltage, thereby adjusting the coupling strength, with a dynamic range of over 20dB.

[0157] 5.2.4 Peripheral Measurement and Control Circuit

[0158] Multispectral drive module: integrates three independent external cavity tunable lasers with wavelengths covering 980 nm, 532 nm and 260 nm respectively, linewidth <100 kHz, power adjustable from 0 to 10 mW, and input to the chip via fiber optic coupling;

[0159] Phase detection calibration module: integrates an on-chip Mach-Zehnder interferometer, paired with a liquid crystal adjustable delay unit (step <1nm) and an InGaAs photodetector, for Berry phase and topological parameter calibration;

[0160] Environmental parameter acquisition module: integrates a ruthenium oxide thermometer (accuracy ±6 mK), a triaxial electromagnetic field probe (DC~18GHz), an on-chip strain gauge (accuracy 1nε), and a 1kHz sampling rate;

[0161] Main controller: It adopts Xilinx Zynq UltraScale+ FPGA, with built-in energy calculation IP core, time compensation algorithm, and IES optimization solver. The scheduling cycle is 1μs, and it supports real-time closed-loop control.

[0162] Quantum state readout module: Employs a superconducting nanowire single-photon detector with 32 channels, a count rate of 5 GHz, and a time resolution of 16 ps.

[0163] 5.3 Functional Simulation Verification Example

[0164] The performance data in the following embodiments are all simulation prediction results based on the Sentaurus TCAD, COMSOL Multiphysics and QuTiP platforms. The simulation boundary is the ideal process and standard test conditions. The actual chip performance may vary due to process deviations and test environment. Those skilled in the art can obtain the corresponding actual performance by adjusting the structure and method disclosed in this invention through conventional experiments.

[0165] 5.3.1 Verification of Three-Body Coupling Strength and Entanglement Performance

[0166] Simulation platform: Sentauru TCAD S-2023 (Device Simulation) + COMSOL Multiphy ic 6.1 (Surface Acoustic Wave Simulation) + QuTiP 4.7 (Quantum Dynamics Simulation)

[0167] Process benchmark: 180nm X-cut thin-film lithium niobate process

[0168] Control group setup: One-dimensional two-body near-neighbor coupling structure with the same process and parameters. Three-qubit GHZ states were prepared using quantum dots with a spacing of 50 nm via a two-stage CNOT gate cascade.

[0169] Simulation boundary conditions: vacuum degree < 1 × 10⁻ 6 mbar, temperature 25 K, phonon frequency 5 GHz, unified detuning 1.2 GHz, three unit cell Rabi frequencies unified at 200 MHz, unit cell spacing 1.5 μm;

[0170] Simulation results of coupling strength:

[0171] Effective coupling strength of three-body coupling mediated by large detuned virtual phonons at a spacing of 1.5 μm. It conforms to the characteristics of a weakly coupled region and satisfies the physical conditions for the preparation of GHZ states; the coupling strength decreases quadratically with increasing spacing, consistent with the theoretical derivation.

[0172] Simulation results of entanglement performance:

[0173]

[0174] 5.3.2 Example of Full-Spectrum Ternary Quantum Communication

[0175] Application scenarios: Multi-band collaborative quantum secure communication, adapted to ternary quantum encryption systems;

[0176] Configuration: The R unit carries the key information encoding (ternary phase encoding), the G unit carries the synchronization clock, and the B unit carries the error check bit; the three signals are transmitted on the same fiber, with no interference between the frequency bands;

[0177] True conditions: SMF-28 single-mode fiber, transmission distance 50km, total attenuation 20dB, simulation results using the BB84 protocol ternary extended version:

[0178] The original key generation rate is 1.28 Mbps, which is 2.1 times higher than the binary two-bit scheme under the same conditions.

[0179] System error rate: This is below the security threshold for quantum key distribution;

[0180] Wide temperature stability: -40 ~85 Within the specified range, the key rate fluctuation is <12%, while the fluctuation of the traditional uncompensated scheme is >35%.

[0181] 5.3.3 Quantum Inertial Sensing Example

[0182] Application scenario: High-precision inertial navigation in GPS-free environments, utilizing the high sensitivity of topological phase to deformation for acceleration measurement;

[0183] Principle: External acceleration causes elastic deformation of the lithium niobate substrate, altering the Berry phase of the closed path, thereby modulating... The parameters are calculated using the sensitivity matrix calibrated at the factory to determine the triaxial acceleration and attitude.

[0184] Simulation conditions: Six-axis high-precision turntable calibration model, sampling rate 1kHz, Kalman filter fusion.

[0185] Simulation performance metrics:

[0186] Acceleration measurement sensitivity: (Ideal laboratory conditions);

[0187] .Random walk of angles: 0.004° / √h;

[0188] Zero-bias stability: 0.02° / h;

[0189] Compared to interferometric fiber optic gyroscopes of the same size: the volume is reduced by 70%, power consumption is reduced by 60%, and the accuracy is on the same order of magnitude.

[0190] 5.4 Examples of Wafer-Level Mass Production Processes

[0191] Using an 8-inch X-cut thin-film lithium niobate wafer, a six-step standardized process flow is implemented, with the main process compatible with existing CMOS mass production lines. The quantum units are integrated using a heterogeneous transfer process.

[0192] 1. Thin film deposition: Electron beam evaporation deposition of aluminum electrode layer, 100 nm thick, deposition rate 0.5 nm / s, wafer rotation 10 rpm to ensure uniformity;

[0193] 2. Electron beam lithography: Exposure of interdigital transducers, optical waveguides, and lattice structure patterns, with a minimum linewidth of 0.2 μm;

[0194] 3. Etching and stripping: Inductively coupled plasma etching of lithium niobate lattice to a depth of 80 nm; Fabrication process for metal electrodes;

[0195] 4. Quantum unit heterogeneous transfer: Using high-precision dielectrophoretic transfer printing technology, three types of pre-prepared quantum units are assembled at lattice vertices with a positioning accuracy of ±50 nm. Low-temperature process avoids damage to the substrate and device.

[0196] 5. Annealing and passivation: Low-temperature annealing at 200℃ in a nitrogen atmosphere for 1 hour to deposit a 200 nm SiO2 passivation layer;

[0197] 6. Dicing and Packaging: After wafer dicing, the wafer is packaged in a ceramic hermetic housing to install optical windows and RF pins.

[0198] 5.4.1 Yield and Reliability Expectations

[0199] Process yield: Based on the mature mass production process of 8-inch thin-film lithium niobate, the yield of the main photolithography, etching, and metallization processes is ≥98%, and the quantum dot point transfer assembly is the bottleneck process for yield; the positioning error is ≤±50. Within the process window, the overall yield is expected to be 92% to 95% after stable mass production.

[0200] Environmental stress: In accordance with IEC 60068-2 civil and industrial grade standard, under the conditions of 100 cycles of temperature cycling from -40℃ to +85℃ (temperature change rate of 10℃ / min, 30 min at each temperature point) and 20 Grms random vibration (20 Hz to 2000 Hz, 1 hour per axis), no functional failure is expected, and the optical performance drift is ≤5%.

[0201] Based on the Arrhenius thermal accelerated aging model, the continuous working life is expected to be greater than 100,000 hours under the rated operating temperature of 25℃ and standard operating conditions. The main failure modes are quantum dot photodegradation and metal electrode electromigration, which is comparable to the lifespan of optoelectronic devices of the same packaging level.

[0202] References

[0203] [1] Zhou Qiang, Xu Ping, Zhu Ninghua. Research progress on lithium niobate thin-film photonic integrated chips [ ]. Acta Optica Sinica, 2022, 42(3): 0323001.

[0204] [2] Dou Xiuming, Sun Baoquan. Surface acoustic wave driven semiconductor quantum dot single-photon device [ Acta Physica Sinica, 2021, 70(15): 157301.

[0205] [3] Chen Xi, Xue Qikun. Experimental research progress on topological quantum states of matter [ [Science in China: Physics, Mechanics and Astronomy, 2022, 52(1): 017301.]

[0206] [4] Lin Yinyin, Xue Han, Tang Tingao. Research progress on ternary storage and ternary integrated circuits [ ]. Microelectronics, 2020, 50(4): 535-542.

[0207] [5] Lu Chaoyang, Pan Jianwei. Research progress in optical quantum computing [ ]. Science in China: Information Science, 2021, 51(1): 1-22.

Claims

1. An RGB triangular dynamics full-spectrum quantum chip system based on a global energy engineering model, characterized in that, It includes a thin-film lithium niobate substrate, a triangular lattice three-level quantum unit array, a multispectral driving module, a phase detection and calibration module, an environmental parameter acquisition module, and a main controller; A triangular closed-loop topological lattice structure is formed on the surface of the thin-film lithium niobate substrate. At the three vertices of this triangular lattice are fixedly integrated long-wavelength R quantum units, mid-wavelength G quantum units, and short-wavelength B quantum units, each capable of independent frequency tuning. These three types of three-level quantum units (R, G, and B) correspond to the near-infrared, visible, and ultraviolet bands, respectively, forming a continuous full-spectrum tuning range. They are mapped to the physical carriers of the information domain (I, logical state -1), energy domain (E, logical state 0), and structure domain (S, logical state +1), respectively, achieving balanced ternary quantum encoding through energy level mapping. Interdigitated surface acoustic wave transducers are fabricated on the thin-film lithium niobate substrate to generate a controllable surface acoustic wave phonon field; three sets of quantum units are arranged within the surface acoustic wave propagation path, and long-range effective coherent coupling is achieved through virtual phonon exchange under large detuning conditions; The multispectral driving module is electrically connected to three sets of quantum units respectively, and is used to output driving light fields of different frequencies to complete quantum energy level control and ternary quantum state preparation; The phase detection calibration module integrates a Mach-Zehnder interferometer optical path to acquire lattice topological phase signals and complete real-time calibration of topological coupling parameters. The environmental parameter acquisition module is used to synchronously acquire operating temperature, external electromagnetic noise, and lattice micro-deformation parameters and upload them to the main controller. The main controller incorporates a chip-level global energy engineering model, the expression of which is: in: A dimensionless topological coupling order parameter specific to triangular lattices. It is an equivalent switched capacitor. Operating voltage For system clock frequency, The effective activity factor after Fourier spectrum correction. This is a temperature correction factor. This is the structural loss correction factor. This is the information loss correction factor. Let be the time-varying relaxation function of Tao. The main controller is configured to execute the following control logic: 1) Completed based on triangular lattice structure parameters Quantitative solutions are obtained, and dynamic parameter correction is achieved by combining real-time environmental parameters with Fourier spectrum analysis. 2) Construct a total Hamiltonian dynamic model that includes single-particle intrinsic energy terms, three-body phonon coupling interaction terms, and environmental non-Hermitian dissipation compensation terms; 3) With the optimization objective of maximizing the synergistic product of the three domains of IES, output control commands are used to simultaneously adjust the output parameters of the multispectral drive module and the phonon field frequency, thereby achieving stable evolution of the full-spectrum ternary quantum state; 4) Based on the Tao time-scale phase correction algorithm, actively compensate for the attenuation of quantum coherence caused by the external environment.

2. The quantum chip system according to claim 1, characterized in that, The triangular lattice-specific topological coupling order parameter The formula is defined as follows: In the formula, for an equilateral triangular topological lattice, under the reference distortion-free condition, the Berry phase at point K in the first Brillouin zone is the standard value. Corresponding to standard coupling strength, The Berry connection vector corresponding to the triangular lattice unit. A counterclockwise closed integration path set along the periphery of an equilateral triangular lattice unit; distortion-free, low-noise, room-temperature operation under reference conditions. The value is 1, and the stable operating range is 0.91 to 1.

15.

3. The quantum chip system according to claim 1, characterized in that, The expression for the total Hamiltonian constructed by the main controller is: The first term consists of the eigenenergy terms of three independent single-particle quantum units. For the first The transition angular frequency of each unit For Pauli Operator; the second term is the three-body effective coupling interaction term after integrating away the virtual phonon degrees of freedom under large detuning. The coupling strength is the three-body coupling strength, which decreases quadratically with increasing element spacing. For the first Energy level drop operator for each unit, The third term represents Hermitian conjugation; the third term is the environmental non-Hermitian dissipation compensation term. This represents the real-time environmental heat dissipation rate.

4. The quantum chip system according to claim 3, characterized in that, Under the large detuning weak coupling approximation, the three-body coupling strength The calculation formula is: In the formula In order The Rabi frequency corresponding to the quantum unit This is the unified detuning quantity between the quantum unit transition frequency and the phonon field frequency. It is the topological geometry correction factor for the triangular lattice three-body structure.

5. The quantum chip system according to claim 1, characterized in that, The non-Hermitian dissipation compensation is achieved through complex domain extended topological coupling parameters, defining complex domain correction parameters. The dissipation coefficient of the imaginary part It is obtained by integrating the environmental noise power spectrum and the system frequency response function, and is used to offset the quantum coherence attenuation caused by external noise and temperature fluctuations.

6. The quantum chip system according to claim 1, characterized in that, The interdigitated surface acoustic wave transducer is attached to the side of the triangular lattice and excites a fixed frequency surface acoustic wave phonon field by applying a fixed frequency driving voltage. The three sets of quantum units are arranged in the stable propagation path of the phonon field. The stable long-range three-body effective coupling effect is achieved by relying on the periodic strain modulation of the surface acoustic wave, which is different from the traditional one-dimensional two-body near-neighbor coupling structure.

7. The quantum chip system according to claim 1, characterized in that, The phase detection calibration module works in conjunction with the main controller to complete... The on-site equivalent calibration, and the calibration calculation formula within the small deformation range are as follows: By altering the optical path difference of the topological optical path through interference optical path scanning, the frequency offset of the quantum unit is collected. Complete on-site precise calibration and real-time parameter updates; among which For the effective mass of the exciton, The speed of light in a vacuum is given. The formula is an engineering equivalent fitting formula, constructed based on the exciton effective mass approximation and the energy-frequency relationship. It maps the exciton frequency shift caused by lattice deformation into a relative change in the topological coupling order parameter, and is applicable after wafer-level experimental calibration and verification.

8. The quantum chip system according to claim 1, characterized in that, The time-varying relaxation function is composed of the product of a phase term, a diffusion term, and an aging term: in: ● The relative phase term corresponds to the phonon oscillation period matching efficiency and the normalized time. The frequency of the phonon field oscillation; ● This is the normalized diffusion term, corresponding to the hysteresis effect of heat conduction and carrier diffusion, and the Fourier number. , ( For thermal diffusivity, The characteristic thickness of the thin film is... (time), satisfy This is the thermal diffusivity correction factor; ● This is the absolute aging term, corresponding to the long-term performance degradation of the device, and is constructed based on Arrhenius's law.

9. A method for controlling full-spectrum ternary quantum communication based on the quantum chip system according to any one of claims 1 to 7, characterized in that, Includes the following steps: S1. Adjust the main controller according to the communication frequency band requirements. The quantum unit operating frequency and the phonon field frequency are used to set the unit-phonon detuning amount for matching the communication band; S2. Utilizing the effective coupling of three sets of quantum units, prepare GHZ-type entangled states based on balanced ternary encoding; S3. The classical communication key information is mapped into a ternary quantum state code through the multispectral driving module and loaded into the multispectral optical quantum signal to complete the transmission; S4. The receiver interprets quantum signals through a quantum state readout module, and relies on non-Hermitian dissipation compensation and time phase correction mechanisms to ensure the integrity of quantum states during long-distance transmission, thereby realizing multi-band collaborative quantum secure communication.

10. A method for calculating the attitude of quantum inertial navigation based on the quantum chip system according to any one of claims 1 to 7, characterized in that, The micro-deformation of the triangular lattice under external acceleration is utilized to... The modulation effect of parameters, real-time acquisition of motion process By combining the parameter offset values ​​with dynamic correction over time and the pre-stored attitude calculation model, the real-time position coordinates and motion attitude data of the carrier are calculated, enabling autonomous positioning and navigation in environments without satellite signals.

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