Method for calculating carbon emissions based on power consumption of semiconductor products

Abstract

The present disclosure relates to a method for calculating carbon emissions based on power consumption of semiconductor products. Disclosed is a life cycle assessment (LCA) method and a carbon emission calculation method based on power consumption reduction of semiconductor products, and more specifically, a technology for quantitatively calculating the amount of power consumption reduction due to performance improvement and manufacturing process advancement of DRAM and NAND semiconductor products and converting it into carbon emissions to compare and evaluate the impact on the environment.

Description

[0001] Intersection of related applications

[0002] This application claims priority to Korean Application No. 10-2025-0055244, filed with the Korean Intellectual Property Office on April 28, 2025, which is incorporated herein by reference in its entirety. Technical Field

[0003] This disclosure relates to a life cycle assessment (LCA) method for power consumption reduction of semiconductor products and a carbon emission equivalent calculation method. More specifically, it relates to a technique for quantitatively calculating the amount of power consumption reduction resulting from performance improvements and manufacturing process advancements related to DRAM and NAND semiconductor products, and converting it into a carbon emission equivalent for comparison and assessment of environmental impact. Background Technology

[0004] In recent years, with the accelerated advancement of digital transformation centered on advanced technologies such as artificial intelligence (AI), big data, and cloud computing, the amount of information stored and processed in data centers has been continuously growing. Data centers are constantly expanding to process such massive amounts of data at high speeds, and this growth is expected to accelerate further in the future. Therefore, the demand for technologies to improve data center operating efficiency and reduce power consumption is increasing.

[0005] Companies operating data centers are constantly demanding that semiconductor products operate faster and consume less power than existing products. This demand is part of efforts to reduce data center operating costs and meet increasingly stringent global carbon emission regulations and environmental protection targets. However, accurately translating the actual power consumption reduction of DRAM or NAND products used in data centers into carbon emission equivalents presents numerous difficulties. This is because multiple variables need to be considered, such as the quantity of products used in the data center, data storage conditions, operating temperature, and operating time. In particular, because companies operating data centers do not provide the necessary information with sufficient detail, it is practically impossible to accurately calculate the carbon emission equivalent of semiconductor products.

[0006] On the other hand, the datasheet specifications for DRAM or NAND products provided by semiconductor manufacturers contain objective and standardized information, such as product characteristics, usage test conditions, density, number of I / Os, operating speed, operating voltage, and power consumption. Because this information is compiled in accordance with standards established by the global semiconductor standards organization JEDEC, it can be used to compare and evaluate various semiconductor products.

[0007] Therefore, there is a need to develop a systematic computational method that can accurately and efficiently calculate the carbon emission equivalent using the specifications of semiconductor products. This will greatly promote corporate compliance with environmental regulations and the fulfillment of their social responsibilities. As used in this article, "carbon emission equivalent of semiconductor products" refers to the carbon emission impact of materials used in the manufacturing process of semiconductor products; and when referring to semiconductor products, "carbon emission equivalent" and "carbon emission amount" are used interchangeably. Summary of the Invention

[0008] This disclosure is designed to address the aforementioned problems, and one object of this disclosure is to provide a method for quantitatively assessing the power consumption reduction effect resulting from technological advancements in the design and manufacturing processes of DRAM and NAND semiconductor products, and based on this assessment, calculating and comparing carbon emissions.

[0009] Furthermore, one object of this disclosure is to provide a method for easily estimating and quantifying the power efficiency improvements and carbon emission reductions of semiconductor products in large-scale power-consuming environments such as data centers.

[0010] Furthermore, one object of this disclosure is to provide a method for comparing the carbon emissions of existing DRAM or NAND products with those of technologically advanced DRAM or NAND products using the datasheet specifications of semiconductor products, and to quantitatively assess the contribution of technological advancements to environmental protection and sustainability.

[0011] According to one embodiment of this disclosure, a method for calculating carbon emissions based on power consumption reduction of semiconductor products may include: inputting the monthly cumulative sales volume of semiconductor products; reflecting the speed or density information of semiconductor products; inputting the annual usage time of semiconductor products; converting the annual read or write processing data volume of semiconductor products used in servers into a unit basis; and calculating carbon emissions based on the power consumption of semiconductor products.

[0012] When the semiconductor product is a DRAM product, the method may further include: a reflection of the number of I / Os of the DRAM product; and a ratio of the amount of read processing data (IDD4R) input to the DRAM product. When the semiconductor product is a NAND product, the method may further include: a reflection of the DWPD (Drive Write Daily) of the NAND product.

[0013] In the case of DRAM products, converting the annual read data processing volume of semiconductor products used in servers to a unit basis can be done by multiplying the monthly cumulative product sales, speed information, number of I / Os, and IDD4R ratio of DRAM products by a time conversion value. In the case of NAND products, converting the annual write data processing volume of semiconductor products used in servers to a unit basis can be done by multiplying the monthly cumulative product sales, density information, and DWPD of NAND products by a time conversion value.

[0014] Furthermore, when calculating the carbon emissions of DRAM products, the calculation can be based on the power consumption (pJ / bit) of the DRAM products. The calculation of the power consumption (pJ / bit) of DRAM products can include: reflecting the IDD power consumption, IDDQ power consumption, and IPP power consumption of the DRAM products in a specific mode; calculating the sum of power consumption by multiplying the IDD power consumption by the VDD operating voltage, the IDDQ power consumption by the VDDQ operating voltage, and the IPP power consumption by the VPP operating voltage; and calculating the power consumption (pJ / bit) by dividing the sum of power consumption by the operating speed and number of I / O of the DRAM products.

[0015] When calculating the carbon emissions of NAND products, the calculation can be based on the power consumption (J / GB) of the NAND products. The calculation of the power consumption (J / GB) of NAND products can include: reflecting the write power consumption of the NAND products; and calculating the power consumption (J / GB) by dividing the reflected write power consumption by the sequential write performance of the NAND products.

[0016] The carbon emission reduction of DRAM or NAND products can be calculated by subtracting the emissions of performance-enhancing products and leakage emissions from the emissions of benchmark products. When the benchmark product is GDDR5, DDR4, or a 72-layer eSSD, the performance-enhancing products can use HBM2 / HBM2E, DDR5, or 96-layer / 128-layer eSSDs.

[0017] This method may also include loading the semiconductor product's specification data before inputting the cumulative monthly product sales. This specification data may include product characteristics, usage test conditions, density, number of I / Os, operating speed, operating voltage, power consumption, and DWPD. When calculating carbon emissions, the international standard emission factor (tCO2-eq / MWh) can be used to convert the semiconductor product's power consumption into carbon emissions (tCO2-eq).

[0018] According to a method for calculating the carbon emissions of semiconductor products disclosed herein, carbon emissions can be easily calculated based on the amount of power consumption reduction using objective data (such as power consumption, operating voltage, operating speed, and number of I / Os) provided in the datasheet specifications of the semiconductor product.

[0019] Furthermore, this disclosure utilizes datasheet specifications compliant with JEDEC standards, allowing power consumption reductions and carbon emissions to be calculated based on highly reliable data. Because standardized data is used for all semiconductor products, objective and fair comparisons can also be made between different products.

[0020] Furthermore, this disclosure can quantitatively analyze the power consumption reduction effect brought about by the development of semiconductor technology, and quantitatively evaluate the contribution of power consumption reduction effect to carbon emission reduction, thereby providing a quantitative basis for the company's carbon emission reduction activities. Attached Figure Description

[0021] Figure 1 This is a flowchart illustrating a method for calculating the carbon emissions of a semiconductor product according to an embodiment of the present disclosure.

[0022] Figure 2 This is a flowchart illustrating a method for calculating the carbon emissions of a DRAM product according to an embodiment of the present disclosure.

[0023] Figure 3 This is a flowchart illustrating a method for calculating the carbon emissions of a NAND product according to an embodiment of the present disclosure.

[0024] Figure 4 This is a diagram illustrating the datasheet specification of a DRAM product (DDR4) according to one embodiment of the present disclosure.

[0025] Figure 5 This is a diagram illustrating the datasheet specification of a DRAM product (DDR5) according to one embodiment of the present disclosure.

[0026] Figure 6 This is a diagram illustrating the datasheet specification of a NAND product (72-layer eSSD) according to an embodiment of the present disclosure.

[0027] Figure 7 This is a diagram illustrating the datasheet specification of a NAND product (96-layer, 128-layer eSSD) according to an embodiment of the present disclosure. Detailed Implementation

[0028] Because this disclosure can be modified in various ways and has many forms, specific aspects or embodiments thereof will be described in detail herein. However, this is not intended to limit this disclosure to the particular embodiments, but rather this disclosure should be understood to include all modifications, equivalents or substitutions falling within the spirit and scope of this disclosure.

[0029] The terminology used herein is for the purpose of describing particular aspects or embodiments only and is not intended to be limiting. In this disclosure, the singular form is intended to include the plural form as well, unless the context clearly specifies otherwise. It should also be understood that the terms “comprising,” “including,” etc., as used herein, specify the presence of said features, integers, steps, operations, elements, components, and / or combinations thereof, but do not exclude the possibility of the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or combinations thereof.

[0030] Unless otherwise defined, all terms used herein, including technical and scientific terms, shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. Terms as defined in common dictionaries shall be interpreted as having the same meaning as they have in the context of the relevant art and shall not be interpreted in an idealized or overly formal sense unless expressly defined herein.

[0031] The terms "first," "second," etc., used herein are used only to distinguish one component from another and are not limited by the manufacturing order. Names may differ in the detailed description of this disclosure and the claims.

[0032] This disclosure relates to a method (hereinafter referred to as "the Method") for calculating carbon emissions based on the power consumption of semiconductor products using datasheet specifications, and proposes a technique for quantitatively calculating the power consumption reduction of specific DRAM and NAND semiconductor products due to performance improvements and manufacturing process advancements, and converting the results into carbon emissions, in order to compare and assess the environmental impact of different semiconductor products.

[0033] A benchmark product refers to a conventional product, while a performance-enhanced product refers to a technologically advanced product that provides improved performance compared to the benchmark product. This disclosure provides a method for quantifying the environmental benefits of transitioning from a benchmark product to a performance-enhanced product. The method will be described in detail below with reference to the accompanying drawings.

[0034] Figure 1 This is a flowchart illustrating a method for calculating the carbon emissions of a semiconductor product according to an embodiment of the present disclosure.

[0035] like Figure 1As shown, a method for calculating the carbon emissions of semiconductor products may include: step S100, inputting the monthly cumulative sales volume of the semiconductor products; step S200, reflecting the speed or density information of the semiconductor products; step S300, inputting the annual usage time of the semiconductor products; step S400, converting the annual read or write processing data volume of the semiconductor products used in servers into a unit basis; and step S500, calculating the carbon emissions based on the power consumption of the semiconductor products.

[0036] Before step S100, which involves inputting the monthly cumulative sales volume of the semiconductor product, the method may also include step S50 (not shown), which involves loading the specification data of the semiconductor product.

[0037] Specification data for semiconductor products can be found in datasheets provided by semiconductor manufacturers, and typically includes product characteristics, test conditions, density, I / O, operating speed, operating voltage, power consumption, DWPD (Driver Writes Per Day), etc.

[0038] In this article, calculations such as power consumption and carbon emissions are performed by reflecting what is described in the specification data for each semiconductor product.

[0039] Before explaining this disclosure in detail, it should be noted that the exemplary semiconductor products include DRAM products and NAND products, and the steps in the method for calculating the carbon emissions of each type of semiconductor product differ, such as... Figure 2 and Figure 3 As shown.

[0040] DRAM (Dynamic Random Access Memory) is a high-speed memory used for data storage and processing, widely used in various digital devices such as computers, servers, and graphics cards. DRAM technology is constantly evolving to improve speed (bandwidth), efficiency, and space utilization.

[0041] DRAM types include DDR4, GDDR5, and HBM. DDR4 is a form where a single DRAM die is mounted on a substrate and is primarily used in servers and PCs. GDDR5 is a single-die-based memory that uses IFBGA technology to further improve speed and is primarily used in graphics cards and game consoles requiring high-speed data processing. HBM is a form that uses TSV (Through Silicon Via) technology to stack multiple DRAM core dies. It has advantages in bandwidth, power efficiency, and space utilization and is used in high-performance computing, data centers, and advanced graphics cards.

[0042] Figure 2 This is a flowchart illustrating a method for calculating the carbon emissions of a DRAM product according to an embodiment of the present disclosure.

[0043] Reference Figure 2 Before step S300, which inputs the annual usage time of the DRAM semiconductor product, the method includes: step S210, reflecting the number of I / Os of the DRAM product; and step S220, inputting the IDD4R ratio (%), which represents the amount of read processing data of the DRAM product.

[0044] Each step of this disclosure will be described in detail below. In step S100, the input monthly cumulative product sales of the DRAM products includes the cumulative amount of DRAM products sold on a monthly basis, and is used as the initial input value for calculating the annual data processing volume based on the actual usage of the DRAM products. Step S100 may also include the number of I / O (input / output) of the DRAM products, and the number of I / O is a factor that directly affects the data processing volume of the DRAM.

[0045] In step S200, the speed information reflecting the DRAM product includes: information reflecting the operating speed of the DRAM product. The operating speed represents data processing performance and is preferably expressed in bandwidth (Gbps).

[0046] In step S220, the read data processing volume (IDD4R) ratio (%) of the DRAM is entered. IDD4R represents the power consumed during a DRAM read operation and indicates the proportion of read operations in the total data processing volume, expressed as a percentage. The IDD4R ratio value entered in this step can be entered by referring to the values ​​specified and provided in the datasheet specifications of the corresponding DRAM product.

[0047] In addition, step S300 of entering the annual usage time of the DRAM product includes: entering the number of hours the DRAM product is used annually. Since DRAM products are used 24 hours a day, 365 days a year in environments such as data centers, the usage is typically set and entered by converting this usage into hours.

[0048] In step S400, the annual read processing data volume of the semiconductor products used in the server is converted into a unit basis, including calculating the annual read processing data volume of the DRAM products based on the data input above.

[0049] Preferably, the annual read processing data volume is calculated by multiplying the monthly cumulative product sales, speed information, number of I / Os, and IDD4R ratio of the DRAM products by a time-converted value used to calculate the annual data processing volume. In this disclosure, 364 days corresponding to 52 weeks are used in calculating the annual data processing volume, and the processing volume per second (Gb / s) is converted to the annual read processing data volume by 3600 (seconds / hour) × 24 (hours / day) × 364 (days / year).

[0050] Next, step S500, which calculates carbon emissions based on the power consumption of the DRAM product, can be performed based on the power consumption (pJ / bit) of the DRAM product. The power consumption (pJ / bit) of the DRAM product can be calculated using the following formula 1.

[0051] [Formula 1]

[0052]

[0053] Calculate the power consumption (EU) of DRAM products BL,i,j The steps (pJ / bit) may include: step S510 (not shown), reflecting the IDD power consumption, IDDQ power consumption and IPP power consumption of the DRAM product in a specific mode; step S520 (not shown), calculating the sum of power consumption by multiplying the IDD power consumption by the VDD operating voltage, multiplying the IDDQ power consumption by the VDDQ operating voltage, and multiplying the IPP power consumption by the VPP operating voltage; and step S530 (not shown), calculating the power consumption (pJ / bit) by dividing the sum of power consumption by the operating speed and I / O number of the DRAM product.

[0054] The carbon emissions of DRAM products can be calculated using the following formula 2.

[0055] [Formula 2]

[0056]

[0057] In Formula 2, BE y Indicates carbon emissions, n k,i,y p represents sales volume PJ,i,j,y Indicates the amount of data, o i,y Indicates annual usage time, EU BL,i,j Indicates power consumption, and EF grid,k This indicates the international standard emission factor.

[0058] In the carbon emission calculation step S500, the international standard emission factor (tCO2-eq / MWh) is preferably used to convert the power consumption of semiconductor products into carbon emissions (tCO2-eq).

[0059] By using the carbon emissions of each semiconductor product, the energy reduction effect of technological advancements (i.e., advancements in the design and manufacturing processes of semiconductor products) can be assessed, thereby comparing the impact on carbon reduction among different semiconductor products.

[0060] Preferably, the carbon emission reduction of DRAM products is calculated by subtracting the performance-enhancing product emissions (in the form of reduced product emissions and leakage emissions) from the baseline product emissions. Here, leakage emissions refer to unintentionally increased greenhouse gas emissions in addition to the emissions from the performance-enhancing product emissions.

[0061] The present disclosure will be described in more detail below by way of examples. However, the following embodiments are for illustrative purposes only, and the scope of the present disclosure is not limited to the following embodiments.

[0062] Example 1

[0063] - Comparison of power consumption reduction and carbon emission reduction between DDR4 and DDR5

[0064] Figure 4 This is a diagram illustrating the datasheet specification of a DRAM product (DDR4) according to one embodiment of the present disclosure. Figure 5 This is a diagram illustrating the datasheet specification of a DRAM product (DDR5) according to one embodiment of the present disclosure.

[0065] Table 1 shows the results of calculating the power consumption (pJ / bit) for each product using the DDR4 and DDR5 datasheet specifications.

[0066] exist Figure 4 and Figure 5 In the DDR5 standard, DDR4 is the benchmark product, while DDR5 represents a performance upgrade. Compared to DDR4, DDR5 is characterized by a lower operating voltage (VDD), dropping from 1.2V to 1.1V, resulting in lower base power consumption. Furthermore, DDR5's IDD4R is 832mA, representing a reduction of approximately 76% from DDR4's 3,483mA.

[0067] Table 1

[0068]

[0069] As shown in Table 1, power consumption decreased from 15.12 pJ / bit for DDR4 to 2.17 pJ / bit for DDR5. For background, the annual data throughput used as the basis for this calculation was determined by multiplying factors such as monthly cumulative product sales, speed information, I / O quantity, and IDD4R ratio by a time-converted value. This annual time-converted value was derived from 3,600 (seconds / hour) × 24 (hours / day) × 364 (days / year).

[0070] Table 2 shows the results of calculating carbon emission reductions by multiplying sales volume, data volume, annual usage time, and the international standard emission factor based on the aforementioned power consumption (pJ / bit). In Example 1, it is assumed that there are no leakage emissions and that the baseline and upgraded products have the same annual data throughput so that only the direct difference in power consumption between the baseline and upgraded products can be compared.

[0071] Table 2

[0072] (Unit: tCO2-eq)

[0073]

[0074] Tables 1 and 2 confirm that technological advancements in semiconductor products, along with improvements in design and manufacturing processes, have led to reduced power consumption and carbon emissions.

[0075] Example 2

[0076] - Comparison of power consumption reduction and carbon emission reduction between GDDR5 and HBM2 / HBM2E

[0077] Table 3 shows the results of power consumption (pJ / bit) calculations for each product using the datasheet specifications of DRAMs such as GDDR5, HBM2, and HBM2E.

[0078] In Table 3, GDDR5 is the baseline product, while HBM2 / HBM2E are performance-enhancing products. GDDR5 has a planar structure, where a single DRAM die is mounted on a substrate; while HBM (High Bandwidth Memory) is characterized by a 3D structure, where multiple DRAM dies are vertically stacked using through-silicon via (TSV) technology. This 3D stacking structure shortens the data travel path and supports 1024-bit-wide I / O interfaces. Therefore, HBM products can achieve higher bandwidth than GDDR5 even at significantly lower operating speeds, resulting in lower power consumption per data bit.

[0079] Table 3

[0080]

[0081] As shown in Table 3, power consumption decreases sequentially, from 6.152 pJ / bit for GDDR5 to 5.805 pJ / bit for HBM2 to 4.520 pJ / bit for HBM2E. Here, the power consumption per bit (pJ / bit) for each DRAM is calculated by dividing the total power consumption (mW) by the total data throughput (Gbps × I / O). Specifically, while GDDR5 only considers the power consumption of the IDD (core), HBM2 and HBM2E calculate the total power consumption by summing the power consumption of the IDD (core), IDDQ (controller), and IPP (pump).

[0082] Table 4 shows the results of calculating carbon emission reductions by multiplying sales volume, annual usage time, and the international standard emission factor based on the aforementioned power consumption (pJ / bit). In Example 2, it is assumed that there are no leakage emissions and that the baseline and performance-enhanced products have the same annual data throughput so that only the direct difference in power consumption between the baseline and performance-enhanced products can be compared.

[0083] Table 4

[0084]

[0085] Tables 3 and 4 confirm that technological advancements in semiconductor products, along with improvements in design and manufacturing processes, have led to reduced power consumption and carbon emissions.

[0086] Next, NAND flash memory is a non-volatile memory that can permanently store data. It retains data even when power is off and offers fast read / write speeds and high durability, so it is used in SSDs, USB drives, and memory cards.

[0087] There are 2D NAND and 3D NAND structures. 2D NAND has cells arranged horizontally on a flat surface, which simplifies the manufacturing process but limits capacity expansion. 3D NAND, on the other hand, is a stacked structure where cells are vertically layered, offering significant advantages such as efficient space utilization, large storage capacity, improved efficiency, and enhanced write performance.

[0088] Figure 3 This is a flowchart illustrating a method for calculating the carbon emissions of a NAND product according to an embodiment of the present disclosure. Figure 2 The steps in the same section are basically similar, so they will not be targeted. Figure 3 Repeat the description.

[0089] Reference Figure 3When using NAND products, step S230, which reflects DWPD (Drive Write Count per Day) (which indicates how many times the drive can be fully written per day during the warranty period), also includes step S300, which inputs the annual usage time of the semiconductor product.

[0090] Unlike DRAM products, the methods used to calculate the carbon emissions of NAND products include steps such as reflecting density information rather than speed information and reflecting DWPD, which leads to differences in the steps involved.

[0091] In step S400, which converts the annual write processing data volume of semiconductor products used in the server to a unit basis, a calculation is performed to calculate the annual data processing volume by multiplying the monthly cumulative product sales, density information, and DWPD of the NAND products by a time conversion value. In this disclosure, it is assumed that a year has 364 days, which is equivalent to 52 weeks, and the annual write processing data volume (Gb / year) is calculated by multiplying 364 (days / year) by the time conversion value.

[0092] Next, step S500 can be performed to calculate carbon emissions based on the power consumption (J / GB) of the NAND product. At this point, the power consumption (J / GB) of the NAND product can be calculated using the following formula 3.

[0093] [Formula 3]

[0094]

[0095] Calculate the power consumption (EU) of NAND products BL,i , The steps in J / GB may include: step S540 (not shown), reflecting the write power consumption (PW) of the NAND product. BL,i (, W); and step S550, by dividing the reflected write power consumption by the sequential write performance (MSW) of the NAND product. BL,i The power consumption (J / GB) is calculated using GB / s.

[0096] The carbon emissions of NAND products can be calculated using the following formula 4.

[0097] [Formula 4]

[0098]

[0099] In Formula 4, BE y Indicates carbon emissions, n k,i,y p represents sales volume PJ,i,j,y Indicates data volume, EU BL,i Indicates power consumption, EF grid，k This indicates the international standard emission factor.

[0100] In the carbon emission calculation step S500, the international standard emission factor (tCO2-eq / MWh) is preferably used to convert the power consumption of semiconductor products into carbon emissions (tCO2-eq).

[0101] By comparing the carbon emissions of each semiconductor product, we can assess the power consumption reduction effect brought about by technological advancements in semiconductor products and improvements in design and manufacturing processes, thereby comparing the amount of carbon emission reduction.

[0102] Preferably, the carbon emission reduction of NAND products is calculated by subtracting the emissions from performance-enhancing products and leakage emissions from the emissions from baseline products. Here, leakage emissions refer to unintentionally increased greenhouse gas emissions other than those from performance-enhancing products.

[0103] The present disclosure will be described in more detail below through embodiments. However, the following embodiments are for illustrative purposes only, and the scope of the present disclosure is not limited to the following embodiments.

[0104] Example 3

[0105] - Comparison of power consumption reduction and carbon emission reduction between eSSD (72-layer) and eSSD (96-layer, 128-layer).

[0106] Figure 6 This is a diagram illustrating the datasheet specification of a NAND product (72-layer eSSD) according to an embodiment of this disclosure. Figure 7 This is a diagram illustrating the datasheet specification of a NAND product (96-layer, 128-layer eSSD) according to an embodiment of the present disclosure.

[0107] Table 5 shows the average power consumption (J / GB) for each product calculated using the datasheet specifications for 72-layer, 96-layer, and 128-layer eSSDs.

[0108] In the following description, the 72-layer eSSD is the baseline product, while the 96-layer and 128-layer eSSDs are performance-enhancing products.

[0109] Table 5

[0110]

[0111] As shown in Table 5, it can be seen that the average power consumption decreased from 6.25 J / GB for 72-layer eSSDs to 5.74 J / GB for 96-layer and 128-layer eSSDs.

[0112] Table 6 shows the results of calculating carbon emission reductions by multiplying sales volume, data volume, and the international standard emission factor based on the aforementioned power consumption (J / GB). In Example 3, it is assumed that there are no leakage emissions so that only the direct difference in power consumption between the baseline product and the performance-enhanced product is compared.

[0113] Table 6

[0114] (Unit: Tco2-eq)

[0115]

[0116] Tables 5 and 6 confirm that technological advancements in semiconductor products, along with improvements in design and manufacturing processes, have led to reduced power consumption and carbon emissions.

[0117] According to one aspect of this disclosure, the process can be broken down into additional steps or combined into fewer steps. Furthermore, some steps can be omitted as needed, and the order of the steps can be changed.

[0118] Those skilled in the art can modify and alter this disclosure described above with reference to the accompanying drawings in various ways, and such modifications and alterations, without being limited by the claims, should be interpreted as being included within the scope of this disclosure.

Claims

1. A method for calculating carbon emissions based on power consumption reduction in semiconductor products, the method comprising: Enter the cumulative monthly sales volume of semiconductor products; This reflects the speed or density information of the semiconductor product; Enter the annual usage time of the semiconductor product; Convert the annual read or write data volume of the semiconductor products used in the server to a unit basis; as well as Carbon emissions are calculated based on the power consumption of the semiconductor product.

2. The method according to claim 1, further comprising: When the semiconductor product is a DRAM product This reflects the number of I / Os in the DRAM product; I / O stands for input / output. as well as Input the IDD4R ratio of the DRAM product, where IDD4R represents the amount of data read and processed.

3. The method according to claim 1, further comprising: When the semiconductor product is a NAND product, it reflects the DWPD of the NAND product, where DWPD refers to the number of drive writes per day.

4. The method according to claim 2, wherein, The annual read processing data volume of the semiconductor products used in the server is converted to a unit basis by performing the following calculation to calculate the annual data processing volume: multiplying the monthly cumulative product sales, speed information, number of I / Os, and IDD4R ratio of the DRAM products by the time conversion value.

5. The method according to claim 3, wherein, The annual write processing data volume of the semiconductor products used in the server is converted to the unit basis by performing the following calculation to calculate the annual data processing volume: multiplying the monthly cumulative product sales, density information and DWPD of the NAND products by the time conversion value.

6. The method according to claim 4, wherein: When calculating the carbon emissions of the DRAM product, the calculation is based on the power consumption of the DRAM product, and Calculating the power consumption of the DRAM product includes: This reflects the IDD power consumption, IDDQ power consumption, and IPP power consumption of the DRAM product in a specific mode; The power consumption is calculated by multiplying the IDD power consumption by the VDD operating voltage, the IDDQ power consumption by the VDDQ operating voltage, and the IPP power consumption by the VPP operating voltage; and The power consumption is calculated by dividing the sum of the power consumption by the operating speed and I / O count of the DRAM product.

7. The method according to claim 5, wherein: When calculating the carbon emissions of the NAND product, the calculation is based on the power consumption of the NAND product, and Calculating the power consumption of the NAND product includes: Reflecting the write power consumption of the NAND product; and The power consumption is calculated by dividing the reflected write power consumption by the sequential write performance of the NAND product.

8. The method according to claim 2, wherein, The carbon emission reduction of the DRAM products is calculated by subtracting the emissions from the performance enhancement products and leakage emissions from the emissions of the baseline products.

9. The method according to claim 3, wherein, The carbon emission reduction of the NAND products is calculated by subtracting the emissions from performance enhancement products and leakage emissions from the emissions of the baseline products.

10. The method according to claim 8, wherein, When the baseline product is GDDR5 or DDR4, the performance enhancement product uses HBM2 / HBM2E or DDR5.

11. The method according to claim 9, wherein, When the baseline product is a 72-layer eSSD, the performance-enhancing products use 96-layer or 128-layer eSSDs.

12. The method according to claim 1, further comprising: Before inputting the cumulative product sales for the month, load the specification data for the semiconductor product. The specification data of the semiconductor product includes product characteristics, usage test conditions, density, number of I / O, operating speed, operating voltage, power consumption, and DWPD.

13. The method according to claim 1, wherein, In the calculation of carbon emissions, the international standard emission factor tCO2-eq / MWh is used to convert the power consumption of the semiconductor product into carbon emissions tCO2-eq.

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