Wafer-type driving device and method for in-situ mechanical adjustment in semiconductor device

Abstract

The application discloses a wafer type positioning device for in-situ mechanical adjustment of a focus ring in a plasma processing chamber. The device comprises a substrate which is sized to match a semiconductor wafer and is compatible with standard wafer transfer equipment, can be sent into the chamber and placed in a hole in an inner ring of the focus ring. A plurality of thin micro-positioners are arranged on the surface / inside of the substrate and are selectively driven by a controller to convert micro-movement of the micro-actuators into a resultant lateral force acting on the focus ring. The controller can drive a single / multiple micro-positioner to move the focus ring in a specified horizontal direction, compensate for a shift of the substrate and adjust the focus ring to a target coordinate. The device can complete high-precision in-situ adjustment of the focus ring in a semiconductor processing device without disassembling the processing chamber and manually moving the focus ring. Through the technical scheme provided by the application, high-precision adjustment of the position of the focus ring can be completed without opening the chamber and manually moving the focus ring, i.e. in-situ adjustment of the focus ring is realized.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing equipment, and more specifically to a wafer-type positioning device and adjustment method for in-situ adjustment of focusing rings in plasma processing chambers. Background Technology

[0002] Plasma processing systems and equipment are widely used in semiconductor manufacturing for processes such as material etching, thin film deposition, surface modification, and thin film treatment on semiconductor wafers. Typical plasma processes include plasma etching, plasma-enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), sputtering deposition, and plasma cleaning. In conventional plasma processing systems, process gases are introduced into a vacuum chamber through a gas distribution structure (e.g., a spray head above the wafer stage); simultaneously, radio frequency (RF) energy is applied to excite plasma within the chamber, ionizing the process gases and generating ions, free radicals, and other reactive particles. The generated plasma particles interact with the semiconductor wafer surface, achieving material removal, thin film deposition, or surface modification according to set process conditions. Process parameters such as etching rate, deposition rate, thin film uniformity, selectivity, critical dimension control, and contour uniformity are affected by parameters such as gas composition, chamber pressure, RF power, substrate bias conditions, plasma density, and electric field distribution within the chamber. In particular, the uniformity of the electric field in the edge region of the wafer can significantly affect the process uniformity and process repeatability of the entire wafer.

[0003] As semiconductor devices continue to evolve towards smaller sizes, tighter process tolerances, and higher integration, the uniformity of plasma processing becomes increasingly critical. Inhomogeneous plasma states at the edges of semiconductor wafers can degrade device performance, thin film characteristics, and critical dimension control capabilities, ultimately reducing wafer edge yield. The flux of ions, free radicals, neutral particles, and deposited materials incident on the wafer surface is affected by the electrical, geometric, thermal, and chemical properties of adjacent structures within the processing environment. At the outer periphery of the wafer, abrupt changes in material composition, geometry, and electrical boundary conditions can occur, resulting in discontinuities in parameters such as impedance, electric field distribution, plasma sheath characteristics, and chemical reactivity. These discontinuities disrupt the local plasma state at the wafer edge, leading to process defects such as uneven edge etching, variations in edge deposition thickness, pattern contour shifts, and film thickness fluctuations, significantly increasing yield losses in the wafer edge region.

[0004] To improve the uniformity of plasma processing at wafer edges, plasma processing systems typically employ focusing rings on the wafer support structure and around the periphery of the semiconductor wafer. During processing, the semiconductor wafer being processed and the focusing rings are arranged concentrically, with the upper surface of the focusing rings approximately flush with the upper surface of the semiconductor wafer. By forming a continuous transition surface around the wafer, the focusing rings can mitigate abrupt changes in the electric field and stray electric field effects at the wafer edge, making the plasma sheath characteristics above the focusing rings more consistent with those above the wafer. This ensures that ions are incident almost perpendicularly even in the wafer edge region, thereby improving etching uniformity and reducing edge process deviations. Related systems and processes can be found in US Patent No. 7,658,816 and US Patent Publication No. 2023 / 0402255, among other technical documents.

[0005] The adjustment effect of the focusing ring depends on its relative position to the semiconductor wafer, making precise alignment crucial. When there is eccentricity, misalignment, or offset between the wafer and the focusing ring, an asymmetric electric field is created, resulting in uneven distribution of the plasma sheath and a significant decrease in process uniformity. To address this, the industry has developed various high-precision technologies for measuring and verifying the relative position of the wafer and the focusing ring.

[0006] However, most existing technologies only allow for focusing ring or wafer position adjustments offline or outside the vacuum chamber after opening the chamber and interrupting the processing flow. This type of offline adjustment increases equipment maintenance time and reduces production capacity. Furthermore, opening and reassembling the vacuum chamber introduces additional process fluctuations. In addition, the inability to dynamically correct positional deviations during processing limits the upper limit of improving process uniformity and repeatability.

[0007] Therefore, the industry urgently needs a device and method that can adjust the relative position of semiconductor wafers and focusing rings in situ within the plasma processing chamber, thereby improving processing efficiency, reducing downtime, and optimizing the uniformity of plasma processes and product manufacturing yield. Summary of the Invention

[0008] This invention provides a wafer-type positioning device for adjusting the position of a focusing ring within a plasma processing chamber. The wafer-type positioning device includes a substrate whose dimensions match those of a semiconductor wafer. The substrate can be fed into the plasma processing chamber via a semiconductor wafer transport system, and it can be placed within an opening in the inner ring of the focusing ring. Multiple thin micropositioners are arranged on / inside the substrate; at least one micropositioner can drive the substrate, push rod, contact tip, or other mechanically interacting components to mechanically contact the area adjacent to the focusing ring.

[0009] The controller can selectively drive one or more thin micro-positioners, converting the minute movements of the micro-actuators into a combined lateral force acting on the focusing ring, thereby achieving in-situ adjustment of the focusing ring position within the plasma chamber. The micro-positioners are arranged circumferentially along the substrate and can be selectively driven, causing the focusing ring to translate in different horizontal directions. In some embodiments, repeated execution of the drive cycle can achieve step-by-step minute movements of the focusing ring, with adjustment accuracy reaching the micrometer or even sub-micrometer level.

[0010] In some embodiments, at least one micropositioner is an electromechanical microactuator equipped with a push rod, contact tip, push block, or other mechanical output component, used to apply a lateral force to the focusing ring. The controller can select driving parameters such as pulse amplitude, pulse duration, waveform, timing, and number of drive cycles to ensure that the lateral force applied to the focusing ring is greater than the static friction force of the focusing ring, while controlling the substrate springback displacement within a preset tolerance range. In some embodiments, the driving parameters can be selected based on a springback model, which can establish a correspondence between the substrate springback displacement and the normalized pulse amplitude.

[0011] In some embodiments, at least one micropositioner can drive the substrate to displace relative to the wafer stage / chuck support surface. For example, a linear resonant actuator generates an asymmetric inertial force, causing the substrate to drift laterally; or, for example, interdigitated electrodes are arranged inside / on the surface of the substrate, and multiphase alternating current with phase difference is input to form a traveling wave electric field. The traveling wave electric field acts on the grounded, biased, or RF coupled conductive components inside the chuck through capacitive coupling, generating a lateral electrostatic force that drives the substrate to translate relative to the chuck. The substrate then makes mechanical contact with the focusing ring, completing the adjustment of the focusing ring position.

[0012] In some embodiments, the wafer positioning device is equipped with one or more sets of sensors to provide feedback signals for position closed-loop control: the first sensor collects motion data and estimates the current displacement of the substrate relative to its initial position; the second sensor detects the position of the focusing ring relative to the substrate. The controller fuses the estimated position of the substrate with the relative position of the focusing ring, calculates the absolute position of the focusing ring with the initial position of the substrate as the reference coordinate system, and drives the micro-positioner to move the focusing ring to the target position.

[0013] In some embodiments, different types of micropositioners can be used in conjunction: the first micropositioner directly contacts the focusing ring to apply a positioning lateral force; the second micropositioner translates and stabilizes the substrate through electrostatic action, counteracting the substrate displacement caused by the reaction force when the first micropositioner is driven.

[0014] According to one aspect of the present invention, a wafer-type positioning device is provided for adjusting the position of a focusing ring within a plasma processing chamber, comprising: A substrate, sized to fit a semiconductor wafer and configured to be transported by a semiconductor wafer transport system to a plasma processing chamber; wherein the substrate can be placed within an inner aperture of a focusing ring; a plurality of thin micropositioners disposed on or within the substrate, wherein at least one micropositioner is configured to cause mechanical interaction between the substrate, push rods, contact tips, or other mechanically interacting components and adjacent portions of the focusing ring; and A controller configured to drive at least one of the plurality of micropositioners to convert the motion of the micro actuators into a combined lateral force acting on the focusing ring, thereby adjusting the position of the focusing ring in situ within the plasma processing chamber.

[0015] Preferably, the plurality of micro-positioners include at least one of the following: an electrostatic actuator, a piezoelectric actuator, a thermal actuator, a microelectromechanical system actuator, or an ultrasonic actuator.

[0016] Preferably, at least one of the plurality of micropositioners includes a linear resonant actuator mounted on or embedded in the substrate, the linear resonant actuator having an active mass capable of vibrating relative to the substrate; the controller is configured to drive the linear resonant actuator with an asymmetric drive waveform, thereby generating an uneven distribution of inertial force in opposite phases of the drive cycle, such that in one phase of the drive cycle, the inertial force is sufficient to overcome the friction between the substrate and the support surface; while in another phase of the drive cycle, the substrate hardly or substantially does not undergo reverse displacement; repeated drive cycles produce a progressive lateral drift of the substrate relative to the support surface.

[0017] Preferably, at least one of the plurality of micropositioners includes an electromechanical microactuator mounted on or within a substrate, the electromechanical microactuator being equipped with a push rod or contact tip for mechanical interaction with a focusing ring; the controller is configured to select the pulse amplitude and pulse duration of the actuator drive signal such that the lateral force applied to the focusing ring by the push rod or contact tip is greater than the static resistance of the focusing ring, but less than the lateral holding threshold of the substrate on the wafer chuck, thereby causing lateral displacement of the focusing ring while limiting the substrate recoil displacement to less than a predetermined tolerance.

[0018] Preferably, the electromechanical micro-actuator includes a piezoelectric actuator, an electrostatic actuator, a thermal actuator, a microelectromechanical actuator, an ultrasonic actuator, a magnetic drive structure, or a thermal actuator.

[0019] Preferably, the push rod or contact tip is configured to always retract within the outer perimeter of the substrate during substrate transfer in the semiconductor wafer transport system, and to extend outward after the substrate is positioned within the opening of the focusing ring.

[0020] Preferably, the controller is configured to select the pulse amplitude and pulse duration according to a recoil model in which the recoil displacement of the substrate is expressed as a function of the normalized pulse amplitude relative to a lateral holding threshold of the substrate.

[0021] Preferably, the bottom surface of the substrate includes a surface microstructure that enhances friction, the microstructure being configured to increase the lateral holding threshold of the substrate on the wafer jig, thereby reducing the recoil displacement of the substrate during the action of the push rod or contact tip, the surface region that enhances friction including a textured surface, a patterned contact region, a flexible contact layer, a friction-enhancing coating, or any combination thereof.

[0022] Preferably, at least one of the plurality of thin micropositioners includes a plurality of staggered electrodes disposed on or within the substrate and configured to receive multiphase AC voltages having their own phase differences to generate a traveling electric field at the interface between the substrate and the chuck support surface. The traveling electric field is capacitively coupled to conductive, grounded, biased, or radio frequency coupled components in the chuck, thereby generating a lateral electrostatic force that causes the substrate to translate relative to the chuck, thereby prompting the substrate to mechanically interact with the focusing ring and adjust its position.

[0023] Preferably, the controller is configured to reverse the phase sequence of the multiphase AC voltage to change the translation direction of the substrate relative to the chuck.

[0024] Preferably, the controller is configured to control at least one parameter of the multiphase AC voltage, including voltage amplitude, frequency, phase difference, phase sequence, duty cycle, waveform shape, number of drive cycles, or action timing, to control the magnitude or direction of the transverse electrostatic force.

[0025] Preferably, the conductive, grounding, biasing, or radio frequency coupling components of the chuck include a conductive chuck body, an embedded electrostatic chuck electrode, a grounding support plate, a radio frequency power supply electrode, a radio frequency return electrode, or a bias electrode.

[0026] Preferably, the wafer positioning device further includes: a first sensor disposed on or within the substrate, used to generate motion data to estimate the current substrate position P. sub The deviation relative to the initial substrate position; and a second sensor, disposed on or within the substrate, configured to determine the relative position P of the focusing ring relative to the substrate. ring_rel The controller is configured to determine the focusing ring position P in a coordinate system associated with the initial substrate position according to the following formula. ring : P ring = P ring_rel + P sub , Based on the determined position of the focusing ring, one or more of the multiple thin micro-positioners are controlled to move the focusing ring to the target position.

[0027] Preferably, the first sensor includes an accelerometer, an inertial measurement unit, a gyroscope, an optical motion sensor, a capacitive displacement sensor, or a microelectromechanical system inertial sensor.

[0028] Preferably, the second sensor includes a non-contact position sensor, an optical sensor, a capacitive sensor, an inductive sensor, an eddy current sensor, an ultrasonic sensor, or an object position sensor, which is used to sense the inner edge of the focusing ring or its vicinity.

[0029] Preferably, the target position corresponds to the focusing ring position which is co-centered with the initial substrate position.

[0030] Preferably, the plurality of thin micropositioners include: a first micropositioner configured to mechanically interact with a focusing ring; and a second micropositioner configured to electrostatically translate a substrate relative to a wafer holder, wherein a controller is configured to coordinate the driving of the first and second micropositioners such that the first micropositioner applies a lateral force to the focusing ring, while the second micropositioner reduces substrate displacement caused by the reaction force generated during the driving of the first micropositioner.

[0031] Preferably, the first micropositioner includes an electromechanical micro actuator having a push rod or contact tip, and wherein the second micropositioner includes a plurality of patterned electrodes for generating lateral electrostatic forces between the substrate and the wafer carrier.

[0032] Preferably, the substrate includes a generally circular wafer-like body whose thickness and outer contour are compatible with transmission via a semiconductor wafer transfer system.

[0033] Preferably, a plurality of thin micropositioners are distributed circumferentially along the substrate and positioned to apply lateral forces to different circumferential portions of the focusing ring.

[0034] Preferably, the controller is configured to selectively drive different micropositioners among a plurality of thin micropositioners to move the focusing ring along different lateral directions.

[0035] Preferably, each drive cycle of at least one of the plurality of thin micropositioners causes the focusing ring to make an incremental movement; repeating the drive cycle allows the focusing ring to achieve a cumulative adjustment in the range of about 1 micrometer to about 500 micrometers.

[0036] Preferably, each drive cycle causes the focusing ring to move incrementally by about 0.1 micrometers or more.

[0037] According to another aspect of the present invention, a method for adjusting the position of a focusing ring within a plasma processing cavity is also provided, comprising the following steps: a. A wafer inspection device and a wafer positioning device are provided in a cassette carrier accessible to a semiconductor wafer transport system; b. Use a semiconductor wafer transport system to transport the wafer-type inspection device to the plasma processing chamber; c. Use a wafer-level inspection device to measure the positioning of the focusing ring relative to the wafer reference position; d. Determine one or more driving parameters of the wafer positioning device based on the measured position and target position of the focusing ring; e. Remove the wafer-type inspection device from the plasma processing chamber; f. Using a semiconductor wafer transport system to transport the wafer positioning device to the plasma processing chamber; and g. Drive the wafer positioning device according to one or more driving parameters to mechanically adjust the position of the focusing ring so that it reaches the target position.

[0038] Preferably, the above method further includes: - After driving the wafer positioning device, remove the wafer positioning device from the plasma processing chamber; - Transfer the wafer-type inspection device to the plasma processing chamber; - The updated position of the focusing ring was measured using a wafer-level inspection device; and - When the updated position of the focusing ring exceeds the predetermined tolerance of the target position, the drive parameters are repeatedly determined and the wafer positioning device is driven.

[0039] This invention also provides a focusing ring adjustment method, which employs a wafer-type inspection device and a separate wafer-type positioning device for adjustment. The wafer-type inspection device and the wafer-type positioning device can be stored in a wafer cassette readable by the wafer transport system. First, the wafer-type inspection device is sent into the plasma chamber to measure the position of the focusing ring relative to the wafer reference. Then, combining the measured position with the target position of the focusing ring, the driving parameters of the wafer-type positioning device are calculated. Subsequently, the wafer-type positioning device is sent into the chamber and driven according to the calculated parameters, thereby mechanically adjusting the focusing ring to the target position.

[0040] In some embodiments, after one positioning device drive is completed, the device is sent back to the wafer-type inspection device to remeasure the updated position of the focusing ring. If the measured position exceeds the preset tolerance of the target position, the drive parameters are updated and the adjustment process is repeated. This wafer positioning device and its supporting method can complete the high-precision in-situ adjustment of the focusing ring without disassembling the chamber, manually moving or removing the focusing ring.

[0041] The technical solution provided by this invention can achieve high-precision adjustment of the focusing ring position without opening the cavity or manually moving the focusing ring, that is, to achieve in-situ adjustment of the focusing ring, thereby improving the production efficiency in the semiconductor processing process. Attached Figure Description

[0042] Other features, objects, and advantages of the present invention will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings: Figure 1 A schematic diagram of a semiconductor processing system according to a specific embodiment of the present invention is shown, including a loading cavity, a transport cavity, and a plasma processing cavity, wherein a wafer positioning device can be transported and operated within the system; Figure 2 A schematic diagram of a wafer positioning device according to a specific embodiment of the present invention is shown, comprising a substrate and multiple thin micropositioners, the micropositioners being capable of mechanically interacting with a focusing ring; Figure 3 A schematic diagram of an embodiment of a wafer positioning device equipped with a linear resonant actuator according to a specific embodiment of the present invention is shown. The linear resonant actuator can drive the substrate to generate inertial motion. Figure 4A A schematic diagram of an electromechanical micro-actuator embodiment according to a specific embodiment of the present invention is shown, with the push rod / contact tip in a retracted state; Figure 4B It shows according to Figure 4A The illustrated embodiment shows a schematic diagram of a push rod / contact tip extending out, contacting the focusing ring, and applying a lateral force. Figure 5 It shows according to Figure 4A The illustrated embodiment shows a schematic diagram of the correspondence between the normalized pulse amplitude and the springback displacement of the wafer positioning device when driving the push rod / contact tip. Figure 6A A schematic diagram of an embodiment of a wafer positioning device for generating a traveling wave electric field with interdigitated electrodes built into the substrate is shown. Figure 6B This illustrates the application to the interdigital electrodes, generating... Figure 6A Schematic diagram of multiphase AC voltage waveforms in a traveling wave electric field; Figure 7 The diagram shows the adjustment process, illustrating the use of a wafer-type inspection device that can be fed into the processing chamber by the wafer transport system and an independent wafer positioning device to complete the focusing ring adjustment. Figure 8 A schematic diagram of an embodiment of a wafer positioning device with integrated sensing units is shown, wherein the sensors are used to acquire the substrate position and the relative position of the focusing ring; and Figure 9A schematic diagram of an embodiment of a composite wafer positioning device is shown. The first micropositioner interacts mechanically with the focusing ring, and the second micropositioner drives the substrate to translate relative to the wafer stage through electrostatic action. Detailed Implementation

[0043] To better illustrate the technical solution of the present invention, the present invention will be further described below with reference to the accompanying drawings.

[0044] Figure 1 As an example of a semiconductor processing system 100, a wafer positioning device 200 can be transported and operated within the system. Figure 2 The wafer positioning device 200 is used to adjust the position of the focusing ring 150 within the plasma processing chamber 120. In some embodiments, the semiconductor processing system 100 includes a loading cavity 110 (for placing a wafer cassette 112, such as a front-opening wafer transfer cassette FOUP), a transfer cavity 115, and a plasma processing chamber 120. The wafer positioning device 200 can be stored together with the semiconductor wafer in the wafer cassette 112 and transferred using standard wafer transfer equipment; the transfer cavity 115 has a built-in wafer transfer robotic arm 117, which can deliver the wafer positioning device 200 from the wafer cassette 112 into the plasma processing chamber 120.

[0045] In some embodiments, the plasma processing chamber 120 is equipped with a spray head 114 (for introducing process gas into the chamber) and a wafer chuck 160 (for carrying semiconductor wafers during plasma processing). A focusing ring 150 is arranged around the wafer chuck 160 to control the electric field distribution at the edge of the semiconductor wafer and the uniformity of the plasma. A wafer positioning device 200 can be placed on the wafer chuck 160 and housed in the inner opening of the focusing ring 150; during plasma processing, the wafer positioning device 200 temporarily occupies the standard processing position of the semiconductor wafer.

[0046] refer to Figure 2 The wafer positioning device 200 includes a substrate 202, the size of which matches the semiconductor wafer (200mm, 300mm, or other specifications compatible with wafer transport systems). The substrate has an overall annular outline and is thin enough to accommodate wafer transport hardware and be smoothly delivered into the plasma chamber. In some embodiments, the substrate thickness and shape can be adapted to the chamber gap, with a thickness range of approximately 3-6mm.

[0047] like Figure 2As shown, multiple thin micropositioners 210a-210d are arranged on the surface / interior of substrate 202. The micropositioners are distributed along the circumference of the substrate. When substrate 202 is placed in the inner opening of focusing ring 150, each micropositioner corresponds to a different circumferential region of the focusing ring. Micropositioners 210a-210d can make mechanical contact with the inner wall of focusing ring 150 adjacent to it, applying a local lateral force to the focusing ring. In some embodiments, the micropositioners are embedded inside substrate 202, maintaining an ultra-thin structure to adapt to wafer transfer processes and chamber size limitations.

[0048] The micropositioners 210a~210d can be piezoelectric actuators, electrostatic actuators, thermal actuators, microelectromechanical (MEMS) actuators, ultrasonic actuators, magnetic drive structures, or any combination of the above types. A single micropositioner can output minute motions, including reciprocating oscillations, vibrations, incremental steps, cyclic extensions, or a combination of multiple motions. A single drive cycle can achieve a minimum step displacement of approximately 0.1 μm; multiple cycles can cumulatively drive the focusing ring 150 to translate 1~500 μm.

[0049] Figure 2 The wafer positioning device 200 is further illustrated with a controller 220, which is electrically connected to all micropositioners 210a-210d. The controller 220 can selectively drive one or more micropositioners 210a-210d to achieve in-situ adjustment of the focusing ring 150 position within the plasma chamber; the controller can independently control each micropositioner, outputting local lateral forces at different circumferential positions of the focusing ring. In some embodiments, multiple micropositioners are driven sequentially, collaboratively, or in phase, causing the focusing ring 150 to translate relative to the wafer chuck 160, the chamber centerline, or other chamber reference structures in any horizontal direction.

[0050] Refer again Figure 1 After the wafer positioning device 200 is placed inside the focusing ring 150, the outer edge of the substrate 202 and the micro-positioners 210a~210d can contact the adjacent inner wall of the focusing ring 150; driving any one of the micro-positioners 210a~210d can drive the focusing ring 150 to move horizontally within the plasma chamber.

[0051] In some embodiments, the wafer positioning device 200 can complete the in-situ repositioning of the focusing ring without disassembling the chamber, manual relocation, or removing the focusing ring 150. After positioning, the wafer transfer robotic arm 117 can move the wafer positioning device 200 out of the plasma chamber in the same way as transporting a semiconductor wafer. That is, through this embodiment, the semiconductor processing system can adjust the position of the focusing ring during operation without shutting down the system; that is, the focusing ring can be repositioned in-situ.

[0052] The following is combined Figure 3 ~ Figure 8 This document provides a detailed description of various thin micro-positioners adapted to this wafer positioning device. Each embodiment can be used individually or in combination with others, unless otherwise stated.

[0053] Figure 3 In the first typical structural embodiment, the mechanical interaction between the wafer substrate itself and the focusing ring is achieved through the movement of the wafer substrate. Figure 3 In the wafer positioning device 300 shown, one or more linear resonant actuators (such as actuators 320) are mounted on the surface / inside of a substrate 315; the substrate 315 can be placed within an inner opening of a focusing ring 150. Each linear resonant actuator 320 includes a coil 330, a movable mass 340 (with a built-in / coupled magnet), and a spring 350; the spring connects the movable mass 340 to the actuator frame / housing supported by the substrate 315.

[0054] The coil 330 is powered by the controller 220, which can be integrated into the substrate 315 or electrically connected to the actuator 320. After an alternating drive signal is input to the coil 330, the magnetic field of the coil interacts with the built-in magnet of the movable mass block 340, causing the mass block to oscillate back and forth relative to the substrate 315; the inertial force generated by the oscillation can drive the wafer substrate 315 to vibrate as a whole.

[0055] In some embodiments, the controller 220 inputs an asymmetric drive signal to the linear resonant actuator 320: the signal has a higher acceleration in the first stage and a lower acceleration in the second stage. Therefore, the inertial force transmitted to the substrate 315 in the first stage can exceed the static friction threshold between the substrate and the support surface, while the inertial force in the second stage is lower than the static friction threshold. Repeating the asymmetric drive cycle causes the substrate 315 to drift slightly relative to the support surface. By adjusting the amplitude, frequency, duty cycle, waveform, phase, and timing of the drive signal, the magnitude and direction of a single drift displacement can be controlled. For example, by inputting drive signals to several linear resonant actuators 320 in a specific area, but not to those in other areas, the wafer positioning device 300 can be controlled to drift in a certain direction.

[0056] In another embodiment, the contact tip disposed at the bottom of the substrate is made of a specific material. When a voltage is applied to the contact tip, the contact tip expands. When the voltage to the contact tip is cut off, the contact tip contracts. Through the above expansion and contraction process, the substrate can be oriented to drift or otherwise.

[0057] Figure 4A , Figure 4BAnother embodiment of the wafer positioning device 400 is shown: an electromechanical micro-actuator 420 is mounted on the surface / inside of a wafer substrate 415 and directly pushes the focusing ring 150 via a push rod / contact tip 450. The wafer substrate 415 is sized to match the semiconductor wafer, allowing for free transport and entry / exit of the plasma chamber using a standard wafer transport system; the substrate 415 is positioned within an opening in the inner ring of the focusing ring 150.

[0058] like Figure 4A As shown, during the wafer transfer and placement process of the wafer positioning device 400, the push rod / contact tip 450 remains retracted and is entirely housed within the outer edge of the substrate 415. This structure ensures compatibility of the device with standard wafers during transfer and prevents the push rod from scraping against the wafer robotic arm, chamber components, focusing ring 150, or other structures.

[0059] like Figure 4B As shown, after the wafer positioning device 400 is placed in place and aligned with the focusing ring 150, the controller 220 supplies power to the electromechanical micro actuator 420 (a piezoelectric actuator can be selected), and the push rod / contact tip 450 extends outward from the substrate 415; the extended push rod contacts the inner wall of the focusing ring 150, applies a lateral force, and drives the focusing ring 150 to translate a preset distance in a specified horizontal direction.

[0060] In some embodiments, the electromechanical micro-actuator 420 includes a piezoelectric element 440 for driving the push rod / contact tip 450. The piezoelectric element can be a piezoelectric stack, a piezoelectric bending element, a piezoelectric tube, or other piezoelectric drive unit, converting the input electrical signal into a minute displacement of the push rod. The controller 220 can control the input electrical signal voltage, pulse width, frequency, waveform, number of drive cycles, and timing, adjust the extension amount of the push rod / contact tip 450, and precisely control the translational distance transmitted to the focusing ring 150.

[0061] In some embodiments, the push rod / contact tip 450 can extend its entire length in a single operation; alternatively, it can extend in multiple piezoelectric cycles, moving the focusing ring 150 in stages. For example, a single drive cycle only causes a submicron / micron displacement of the focusing ring, and the total target offset of the focusing ring is achieved by adjusting the total number of cycles. The minimum single step can reach 0.1 μm, and the overall adjustment range of the focusing ring is approximately 1~500 μm.

[0062] After the focusing ring 150 is adjusted, the push rod / contact tip 450 is preferably retracted to its initial state; after retraction, the wafer positioning device 400 can be moved out of the plasma chamber without mechanical interference.

[0063] Figure 5This diagram illustrates the correspondence between the normalized pulse amplitude and the springback displacement of the wafer positioning device when the push rod / contact tip 450 is driven. In some embodiments, the piezoelectric element 440 is driven by a pulsed electrical signal, and the push rod / contact tip 450 outputs a pulsed lateral force to the focusing ring 150; the pulse force characteristics are defined by the equivalent pulse amplitude A and the pulse duration Δt.

[0064] When the push rod / contact tip 450 pushes the focusing ring 150, it will be subjected to a reverse reaction force. Therefore, although the target is to move the focusing ring 150, the wafer positioning device itself will still produce a small rebound displacement relative to the wafer stage. Figure 5 A reference model is used to estimate the rebound displacement.

[0065] like Figure 5 As shown, the horizontal axis represents the normalized pulse amplitude, defined as A / F. static,sub Where A is the equivalent lateral pulse amplitude of the push rod output, and F static,sub The vertical axis represents the lateral static friction threshold of the wafer positioning device on the wafer stage; the vertical axis represents the springback displacement X of the wafer positioning device. sub .

[0066] Pre-slip range: Pulse amplitude A is less than the lateral static friction threshold F static,sub At this time, the wafer positioning device is basically fixed on the wafer stage; however, due to elastic deformation, contact compliance, local micro-slippage, vibration, and the mechanical compliance of the actuator installation, the springback displacement is not zero. In one embodiment, a typical estimation model is shown below: X sub = X pre,max •(A / F) static,sub ) n In the formula X pre,max The maximum pre-slip displacement is when the lateral static friction threshold is approached, and n is an empirical exponent that characterizes the rate at which the rebound displacement increases as the pulse amplitude approaches the threshold. Figure 5 In the example, X pre,max We set the value to 2μm and n to 4, but other values ​​can be used in practice.

[0067] Figure 5 The solid line in the figure represents the pre-slip springback characteristic curve: when the normalized pulse amplitude is small, the wafer device springback displacement is minimal; when the normalized amplitude approaches 1 (A=F...), the springback is even smaller. static,sub When this happens, the rebound displacement increases rapidly. Figure 5 The dashed line in the figure represents the overall sliding start interval after the pulse amplitude reaches / exceeds the lateral static friction threshold; within this interval, the wafer positioning device will slide significantly relative to the wafer stage.

[0068] Therefore, the controller can select the driving voltage, pulse width, waveform, frequency, number of cycles, and timing of the piezoelectric element 440 to ensure that the equivalent pulse amplitude is greater than the static friction force of the focusing ring 150, while being lower than the lateral static friction threshold of the wafer positioning device, thus satisfying the preferred operating conditions. F static,ring < A < F static,sub (1) In the formula F static,ring This represents the static friction force of the focusing ring 150 on the wafer stage. Under this condition, the push rod / contact tip 450 can drive the focusing ring 150 to a slight lateral displacement, while the springback displacement of the wafer positioning device is controlled within a preset tolerance.

[0069] Example: The controller selects drive parameters that satisfy: A / F static,sub <0.7, Or more preferably: A / F static,sub <0.5; At the same time, it is guaranteed that: A > F static,ring .

[0070] Therefore, a single driving pulse can precisely drive the focusing ring to move in minute steps, while limiting the rebound of the wafer positioning device to within 10μm, 5μm, or 1μm, or controlling it to within a specified percentage of the focusing ring displacement.

[0071] The pulse duration Δt is also used to control the single-pulse focusing ring step size: shorter pulses reduce bounce and overshoot; multiple pulses are superimposed to achieve the total target adjustment of the focusing ring. Therefore Figure 5 A design model is provided to select piezoelectric drive parameters, converting the micro-motion of the push rod into controllable lateral positioning of the focusing ring, while ensuring that the wafer positioning device is basically fixed on the wafer stage.

[0072] In a preferred embodiment, the bottom surface of the substrate 415 is structurally optimized to improve the lateral static friction threshold F between the wafer positioning device and the wafer stage. static,sub The substrate bottom surface is configured with high-friction areas, textured surfaces, roughened areas, patterned contact areas, compliant contact layers, or friction-enhancing coatings. Increase F static,sub Subsequently, the wafer positioning device can resist the springback displacement caused by the reaction force when the push rod pushes the focusing ring.

[0073] In another embodiment, the bottom surface of substrate 415 is processed through mechanical roughening, etching, sandblasting, laser texturing, grinding, and patterning to generate a micro / macro surface uneven structure. The uneven structure enhances the frictional engagement with the wafer stage, while the overall thickness and shape remain compatible with standard wafer cavity gaps. Surface structures can include ridges, trenches, pits, micro-bumps, annular patterns, radial patterns, distributed contact islands, etc.

[0074] In another embodiment, the bottom surface of the substrate 415 is coated with a friction-enhancing coating. The coating can be made of vacuum and plasma compatible materials such as ceramics, oxides, nitrides, carbides, diamond-like carbon, alumina, silicon carbide, silicon nitride, and yttrium-containing coatings. The coating combines high static friction, low particle generation, chemical compatibility with plasma environments, and wear resistance to repeated handling.

[0075] In some embodiments, a compliant / semi-compliant friction-enhancing layer is disposed on the bottom surface of the substrate 415 to increase the actual contact area between the substrate and the wafer stage and improve the lateral static friction threshold F. static,sub The flexible friction-enhancing layer can be made of process-compatible materials such as high-temperature resistant polymers, elastomers, ceramic polymer composites, and ultra-thin flexible gaskets; for vacuum and plasma applications, low-outgas, low-particle, and thermally stable materials are selected.

[0076] Some embodiments employ a textured surface + friction-enhancing coating composite structure: the substrate 415 is first patterned / roughened to form a controllable surface morphology, and then a wear-resistant, plasma-compatible coating is sprayed on; the composite structure improves F static,sub At the same time, it reduces wear and particles caused by direct contact with rough surfaces.

[0077] The substrate bottom surface structure design must ensure the lateral static friction threshold F of the wafer stage. static,sub The force is greater than the lateral force driven by the push rod, and this lateral force is also greater than the static friction force F of the focusing ring at 150°. static,ring , maintaining the working range of type (1); while the push rod pushes the focusing ring 150 to move, the springback displacement of the substrate 415 decreases and is controlled within the preset tolerance.

[0078] Figure 6A , Figure 6B In another embodiment: at least one of the multiple thin micropositioners 620 includes multiple sets of interdigitated electrodes, arranged inside / on the bottom surface of the substrate 660 of the wafer positioning device 600. The interdigitated electrodes are close to the lower surface of the substrate 660, and when the wafer positioning device 600 is placed on the chuck support surface, the electrodes face the chuck surface; the chuck can be an electrostatic chuck, a wafer stage, a base, or a support structure for supporting wafer-like devices within a cavity.

[0079] Multiple sets of interdigitated electrodes are electrically connected to the controller 220; the controller 220 inputs multiphase AC power with phase difference to the interdigitated electrodes, and adjacent electrodes / electrode groups can input two-phase, three-phase, four-phase or other multiphase voltage signals; the phase difference causes the electric field pattern to propagate laterally along the electrode array, forming a traveling wave electric field at the contact surface between the substrate 660 and the support surface of the chuck 160.

[0080] The traveling wave electric field passes through the dielectric layer, insulating layer, air gap, or contact interface between the lower surface of the substrate 660 and the chuck support surface, and acts on the chuck conductive component through capacitive coupling; the chuck conductive component can be grounded, externally biased, powered by radio frequency, or used in radio frequency circuits, such as the chuck conductive substrate, embedded electrodes in the electrostatic chuck, grounding support plate, radio frequency electrodes, bias electrodes, etc.

[0081] The traveling wave electric field induces and redistributes charges within the conductive components of the chuck; the traveling wave electric field generated by the interdigitated electrodes interacts with the induced charges in the chuck, generating a lateral electrostatic force at the contact surface between the substrate 660 and the chuck support surface. This lateral electrostatic force acts as a shear force, driving the substrate 660 to translate relative to the chuck.

[0082] The direction of the lateral electrostatic force can be controlled by adjusting the phase sequence of the multiphase AC power: reversing the phase sequence reverses the propagation direction of the traveling wave electric field, and the translation direction of the substrate 660 relative to the chuck is synchronously reversed. The magnitude of the lateral electrostatic force and the single-step displacement can be controlled by adjusting the voltage amplitude, frequency, phase difference, phase sequence, duty cycle, waveform, number of drive cycles, and timing.

[0083] In actual operation, the wafer positioning device 600 is placed in the inner ring opening of the focusing ring 150; after the substrate 660 is driven to translate relative to the chuck by lateral electrostatic force, the outer edge of the substrate 660, the contact protrusion, the push block or other interactive structure mechanically contacts the inner wall of the focusing ring 150, applying lateral force to the focusing ring 150, thereby realizing the in-situ adjustment of the position of the focusing ring 150 in the plasma chamber.

[0084] By controlling the total number of drive cycles of the input interdigitated electrodes, the total translation of the focusing ring 150 can be precisely controlled; a single drive cycle drives the substrate 660 in a micro-step, and multiple cycles accumulate to achieve the target adjustment displacement of the focusing ring.

[0085] The above embodiments provide a wafer positioning device equipped with one or more micro-positioners and capable of in-situ mechanical adjustment of the focusing ring; some implementations use an independent detection device to measure the position of the focusing ring: the wafer positioning device only integrates the drive component, and is equipped with an independent wafer detection device to measure and verify the position of the focusing ring.

[0086] Figure 7The schematic diagram of adjustment method 700 illustrates the use of a wafer-type inspection device and an independent wafer-type positioning device to adjust the focus ring position. Both the inspection and positioning devices are sized to match the semiconductor wafer and are compatible with the wafer transport equipment in semiconductor processing systems. The wafer-type inspection device measures the focus ring position, while the wafer-type positioning device mechanically adjusts the focus ring position.

[0087] Step 710: Load the wafer inspection device and wafer positioning device into the wafer cassette; place the wafer cassette in the loading cavity of the semiconductor processing system, and the wafer transfer robotic arm / transfer mechanism can read the devices inside the cassette. Both sets of devices adopt a wafer shape, and the wafer transfer system can transfer the two sets of devices in the same way as transferring semiconductor wafers.

[0088] Step 720: Send the wafer inspection device into the processing chamber and place it on the chuck, and measure the position of the focusing ring; the measured position can be the coordinates of the focusing ring relative to the wafer reference, chuck reference, chamber reference or other chamber reference coordinate system, and the measurement result reflects the offset of the current position of the focusing ring from the target ideal position.

[0089] Step 730: Based on the measured position of the focusing ring, calculate the driving parameters of the wafer positioning device; the driving parameters include the selection of a micro-positioner, driving direction, pulse amplitude, pulse duration, voltage, frequency, waveform, number of driving cycles, timing sequence, etc., so that the wafer positioning device can push the focusing ring to the target position.

[0090] Step 740: Place the wafer positioning device on the chuck and drive the focusing ring according to the calculated parameters; for example, selectively drive one or more micro-positioners in the positioning device to apply a lateral force to the focusing ring, causing the focusing ring to translate towards the preset target position.

[0091] Step 750: Use a wafer-type inspection device to verify the position of the focused ring after adjustment; in some embodiments, the wafer-type positioning device is removed first, and then the wafer-type inspection device is sent in and a suction cup is placed to retest the updated coordinates of the focused ring; other feasible timing sequences can also be used to complete the retest.

[0092] Judgment step 760: Compare the retested and updated focus ring position with the preset tolerance threshold. If the measured coordinates fall within the preset tolerance, the process proceeds to step 770, and the adjustment process is completed; if they exceed the tolerance, the process proceeds to step 780, updates the driving parameters based on the retest data, and returns to step 740, where the wafer positioning device is sent for secondary fine-tuning.

[0093] Figure 7The method 700 shown forms an iterative closed-loop process of "measurement - adjustment - retesting": the wafer inspection device is responsible for position measurement and verification, and the wafer positioning device performs mechanical adjustment; both devices are transported by the wafer transport system, and the focusing ring can be adjusted in place in the processing chamber without disassembling the chamber or manually moving the focusing ring.

[0094] Figure 7 The embodiment uses separate wafer devices for detection and positioning; the detection and positioning functions can also be integrated into a single wafer positioning device. Figure 8 In the integrated embodiment, the substrate has a built-in sensor to collect the substrate displacement and the relative position of the focusing ring, so as to realize closed-loop focusing ring adjustment with feedback.

[0095] like Figure 8 As shown, the wafer positioning device 800 includes a substrate 805, which is shaped to fit wafer transport and can be placed on a wafer stage for adjusting the position of the focusing ring 150 within the plasma chamber. Multiple thin micropositioners 810a-810d are arranged on the surface / inside of the substrate 805, all of which are electrically connected to the controller 220. The controller 220 can selectively drive any one of the micropositioners 810a-810d to make it directly mechanically contact the focusing ring 150, or drive the entire substrate 805 to contact the focusing ring 150, applying a lateral positioning force to the focusing ring 150. By switching between driving different micropositioners, the controller 220 can adjust the focusing ring 150 in any horizontal direction.

[0096] Figure 8 In this embodiment, the wafer positioning device 800 further incorporates a first sensor 820, arranged on the surface / inside the substrate 805. The first sensor collects motion data and estimates the displacement of the substrate 805 relative to its initial placement origin. For example, when the wafer positioning device 800 initially places the wafer stage, the initial position of the substrate is defined as the origin (0,0) of the xy coordinate system. During / after driving the micropositioners 810a~810d, the substrate 805 will displace relative to the wafer stage. The controller 220 calculates the current coordinates of the substrate based on the motion data from the first sensor 820. P sub = (x sub , y sub ) The coordinates are based on the origin of the initial placement of the substrate.

[0097] In some embodiments, the first sensor 820 may be an accelerometer, an inertial measurement unit, a MEMS inertial sensor, a gyroscope, an optical motion sensor, a capacitive displacement sensor, or other devices that can collect information on the motion and displacement of the substrate. If an accelerometer / inertial sensor is selected, the controller 220 processes the acceleration, velocity, and motion data to estimate the substrate displacement, and can combine reference data, filtering, and periodic position measurements to complete correction and calibration.

[0098] The wafer positioning device 800 also incorporates a second sensor 825, which is disposed on the surface / inside of the substrate 805; the second sensor 825 is used to detect the coordinate P of the focusing ring 150 relative to the substrate 805. ring_rel For example, it can detect the distance, gap, and lateral offset of the inner wall of the focusing ring relative to the edge, center, and reference features of the substrate. The second sensor 825 can be an ultra-thin non-contact position sensor, optical sensor, capacitive sensor, inductive sensor, eddy current sensor, ultrasonic sensor, or other position sensors adapted for close-range detection of the focusing ring.

[0099] The second sensor 825 only measures the position of the focusing ring 150 relative to the substrate 805; if the substrate 805 itself is displaced, this relative coordinate cannot directly represent the absolute position of the focusing ring in the original reference coordinate system. Therefore, the controller 220 fuses the current coordinate P of the substrate obtained from the first sensor. sub The relative coordinates P of the focusing ring obtained by the second sensor ring_rel The true absolute coordinates P of the focusing ring relative to the initial origin of the substrate are calculated. ring Calculation formula: P ring = P ring_rel + P sub The controller 220 will convert the absolute coordinates P of the focusing ring. ring Compare with target coordinates 850; target coordinates 850 represent the ideal concentric position of the focusing ring, for example, centered with the initial origin (0,0) of the substrate. Based on P ring The controller 220 uses the difference between the target coordinate 850 and the target coordinate 850 to select the micro-positioner to be driven and calculates driving parameters such as driving direction, pulse amplitude, pulse duration, number of driving cycles, waveform, and timing sequence.

[0100] After a single drive is completed, the controller 220 updates the current coordinates P of the substrate via the first sensor 820. sub The relative coordinates Pring_rel of the focusing ring are updated using the second sensor 825, and the absolute coordinates P of the focusing ring are recalculated. ringIt then determines whether additional drive adjustment is needed. Thus, the wafer positioning device 800 forms a closed-loop feedback adjustment, continuously driving until the focusing ring 150 moves to the target coordinate 850 or falls within the preset tolerance range.

[0101] Figure 8 The advantage of this embodiment is that it simultaneously considers the displacement of the focusing ring relative to the substrate and the offset of the substrate itself relative to the wafer stage; even if the driving micropositioners 810a~810d cause the substrate 805 to slightly rebound or drift, the controller 220 can automatically compensate for the substrate offset when calculating the true coordinates of the focusing ring and generating the next driving command.

[0102] Figure 9 This is another embodiment of a wafer positioning device 900, used to adjust the position of the focusing ring 150 within a plasma chamber. Consistent with the aforementioned embodiments, the wafer positioning device 900 includes a substrate 960, which is shaped to fit wafer transport and placed on a wafer stage. It is housed within an opening in the inner ring of the focusing ring 150 and can mechanically interact with the focusing ring 150 in situ within the chamber.

[0103] Figure 9 In this embodiment, multiple thin micropositioners are arranged on the surface / inside of the wafer positioning device 900 substrate 960, which are divided into two types: a first micropositioner 920 and a second micropositioner 620. The first micropositioner 920 is used for direct mechanical interaction with the focusing ring 150; the second micropositioner 620 is used to drive the substrate 960 to translate relative to the wafer stage.

[0104] The first micro-positioner 920 is an electromechanical micro-actuator, mounted on the surface / inside of the substrate 960; any of the aforementioned actuator types can be selected: piezoelectric actuator, piezoelectric stack, piezoelectric bending element, piezoelectric tube, linear stepper actuator, electromagnetic actuator, electrostatic actuator, thermal actuator, and other ultra-thin actuators, outputting a small mechanical displacement; the first micro-positioner 920 is equipped with / connected to mechanical output components such as push rod, contact tip, and push block, applying lateral force to the area adjacent to the focusing ring 150.

[0105] The second micropositioner 620 drives the substrate 960 to translate relative to the wafer stage via electrostatic interaction. In some embodiments, the second micropositioner 620 includes multiple sets of electrodes arranged on the lower surface of the substrate 960, such as patterned electrodes like interdigital electrodes, segmented electrodes, and comb electrodes. The second micropositioner 620 can generate electrostatic force between the substrate 960 and the wafer stage, causing the substrate to translate or be pre-pressed for positioning.

[0106] Both the first micropositioner 920 and the second micropositioner 620 are electrically connected to the controller 220; the controller 220 coordinates the timing and output of the two actuators. In one operating mode, the controller drives the first micropositioner 920 to directly push the focusing ring 150, causing it to make a slight translation; when the first micropositioner 920 applies a lateral force to the focusing ring 150, the substrate 960 will be subjected to a reverse reaction force, causing rebound, drift, and unexpected offset.

[0107] To suppress substrate misalignment, the controller 220 synchronously drives the second micropositioner 620 to generate an electrostatic compensation force, which drives, pre-tightens, and anchors the substrate 960 relative to the wafer stage. The electrostatic force output by the second micropositioner 620 cancels, weakens, and compensates for the substrate misalignment caused by the driving reaction force of the first micropositioner. Thus, while the first micropositioner 920 pushes the focusing ring 150, the second micropositioner 620 can significantly reduce the springback displacement of the substrate 960.

[0108] The controller 220 can start the second micropositioner 620 before, during, or after the first micropositioner 920 is driven. 1. Pre-drive start-up: Preload and pre-press the substrate in advance to counteract the estimated springback; 2. Synchronous drive: Works synchronously with the first micro-positioner, and the electrostatic compensation force counteracts the reaction force generated by the mechanical drive in real time; 3. Start-up after drive: After the rebound occurs, the substrate 960 is reset to the reference coordinate.

[0109] The controller 220 can independently control the driving parameters of the first micropositioner 920 (pulse amplitude, pulse duration, waveform, number of cycles, timing, driving sequence) and the electrostatic driving parameters of the second micropositioner 620 (voltage amplitude, frequency, phase difference, phase sequence, duty cycle, waveform, number of cycles, translation direction); and coordinate the two sets of parameters to enable the first micropositioner 920 to effectively move the focusing ring 150, while the second micropositioner 620 suppresses the unexpected offset of the substrate 960.

[0110] The controller 220 can coordinately control two types of micro-positioners based on a preset driving timing; it can also be linked to control based on sensor feedback (substrate coordinates, focusing ring coordinates, or both simultaneously): for example, if the controller detects / predicts that the substrate will rebound after the first micro-positioner is driven, the controller will drive the second micro-positioner 620 to translate the substrate 960 in the compensation direction.

[0111] therefore Figure 9The embodiment employs a composite positioning scheme: the first micro-positioner 920 directly mechanically contacts the focusing ring 150, efficiently transmitting positioning thrust; the second micro-positioner 620 relies on electrostatic action to translate and stabilize the substrate 960. The two sets of micro-positioners work together to increase the net translational amount of the focusing ring in a single operation, reduce cumulative substrate drift, and improve adjustment repeatability, achieving high-precision, controllable, in-situ adjustment of the focusing ring within the plasma chamber.

[0112] The examples and variations listed above are for illustrative purposes only, and those skilled in the art will understand that numerous derivative variations exist; the various features and functions described above can be freely combined to form entirely new systems and application solutions. Those skilled in the art can derive currently unforeseen alternatives, modifications, variations, and improvements based on this disclosure, all of which are included within the scope of protection of this invention and do not affect the substantive content of this invention.

Claims

1. A wafer-type positioning device for adjusting the position of a focusing ring within a plasma processing chamber, comprising: A substrate, sized to fit a semiconductor wafer and configured to be transported by a semiconductor wafer transport system to a plasma processing chamber; wherein the substrate can be placed within an inner aperture of a focusing ring; a plurality of thin micropositioners disposed on or within the substrate, wherein at least one micropositioner is configured to cause mechanical interaction between the substrate, push rods, contact tips, or other mechanically interacting components and adjacent portions of the focusing ring; and A controller configured to drive at least one of the plurality of micropositioners to convert the motion of the micro actuators into a combined lateral force acting on the focusing ring, thereby adjusting the position of the focusing ring in situ within the plasma processing chamber.

2. The wafer positioning device according to claim 1, wherein the plurality of micro-positioners includes at least one of the following: an electrostatic actuator, a piezoelectric actuator, a thermal actuator, a microelectromechanical system actuator, or an ultrasonic actuator.

3. The wafer positioning device according to claim 1, wherein, At least one of the plurality of micropositioners includes a linear resonant actuator mounted on or embedded in a substrate, the linear resonant actuator having an active mass capable of vibrating relative to the substrate; the controller is configured to drive the linear resonant actuator with an asymmetric drive waveform, thereby generating an unbalanced distribution of inertial force in opposite phases of the drive cycle, such that in one phase of the drive cycle, the inertial force is sufficient to overcome the friction between the substrate and the support surface. In another phase of the drive cycle, the substrate hardly or almost never undergoes reverse displacement; repeated drive cycles produce a gradual lateral drift of the substrate relative to the support surface.

4. The wafer positioning device according to claim 1, wherein, At least one of the plurality of micropositioners includes an electromechanical microactuator mounted on or within a substrate, the electromechanical microactuator being equipped with a push rod or contact tip for mechanical interaction with a focusing ring; the controller is configured to select the pulse amplitude and pulse duration of the actuator drive signal such that the lateral force applied to the focusing ring by the push rod or contact tip is greater than the static resistance of the focusing ring, but less than the lateral holding threshold of the substrate on the wafer chuck, thereby causing lateral displacement of the focusing ring while limiting the substrate recoil displacement to less than a predetermined tolerance.

5. The wafer positioning device according to claim 4, wherein the electromechanical micro-actuator includes a piezoelectric actuator, an electrostatic actuator, a thermal actuator, a microelectromechanical actuator, an ultrasonic actuator, a magnetic drive structure, or a thermal actuator.

6. The wafer positioning device according to claim 4, wherein, The push rod or contact tip is configured to always retract within the outer perimeter of the substrate during substrate transfer in the semiconductor wafer transport system and extend outward after the substrate is positioned within the opening of the focusing ring.

7. The wafer positioning device according to claim 4, wherein, The controller is configured to select the pulse amplitude and pulse duration based on a recoil model in which the recoil displacement of the substrate is expressed as a function of the normalized pulse amplitude relative to a lateral holding threshold of the substrate.

8. The wafer positioning device of claim 4, wherein the bottom surface of the substrate includes a surface microstructure for enhancing friction, the microstructure being configured to increase the lateral holding threshold of the substrate on the wafer jig, thereby reducing the recoil displacement of the substrate during the action of the push rod or contact tip, the surface region for enhancing friction including a textured surface, a patterned contact region, a flexible contact layer, a coating for enhancing friction, or any combination thereof.

9. The wafer positioning device according to claim 1, wherein, At least one of the plurality of thin micropositioners includes a plurality of staggered electrodes disposed on or within a substrate and configured to receive multiphase AC voltages having their own phase differences to generate a traveling electric field at the interface between the substrate and the chuck support surface. The traveling electric field is capacitively coupled to conductive, grounded, biased, or radio frequency coupled components in the chuck, thereby generating a lateral electrostatic force that causes the substrate to translate relative to the chuck, thereby prompting the substrate to mechanically interact with the focusing ring and adjust its position.

10. The wafer positioning device according to claim 9, wherein, The controller is configured to reverse the phase sequence of the multiphase AC voltage to change the translation direction of the substrate relative to the chuck.

11. The wafer positioning device according to claim 9, wherein, The controller is configured to control at least one parameter of the multiphase AC voltage, including voltage amplitude, frequency, phase difference, phase sequence, duty cycle, waveform shape, number of drive cycles, or action timing, to control the magnitude or direction of the transverse electrostatic force.

12. The wafer positioning device according to claim 9, wherein the conductive, grounding, biasing or radio frequency coupling components of the chuck include a conductive chuck body, an embedded electrostatic chuck electrode, a grounding support plate, a radio frequency power supply electrode, a radio frequency return electrode or a biasing electrode.

13. The wafer positioning device according to claim 1, further comprising: The first sensor, disposed on or within the substrate, is used to generate motion data to estimate the current substrate position P. sub The deviation relative to the initial substrate position; and a second sensor, disposed on or within the substrate, configured to determine the relative position P of the focusing ring relative to the substrate. ring_rel The controller is configured to determine the focusing ring position P in a coordinate system associated with the initial substrate position according to the following formula. ring : P ring = P ring_rel + P sub , Based on the determined position of the focusing ring, one or more of the multiple thin micro-positioners are controlled to move the focusing ring to the target position.

14. The wafer positioning device according to claim 13, wherein the first sensor includes an accelerometer, an inertial measurement unit, a gyroscope, an optical motion sensor, a capacitive displacement sensor, or a microelectromechanical system inertial sensor.

15. The wafer positioning device according to claim 13, wherein, The second sensor includes a non-contact position sensor, an optical sensor, a capacitive sensor, an inductive sensor, an eddy current sensor, an ultrasonic sensor, or an object position sensor, which is used to sense the inner edge of the focusing ring or its vicinity.

16. The wafer positioning device according to claim 13, wherein the target position corresponds to the focusing ring position which is co-centered with the initial substrate position.

17. The wafer positioning device according to claim 1, wherein, The plurality of thin micropositioners include: a first micropositioner configured to mechanically interact with a focusing ring; and a second micropositioner configured to electrostatically translate a substrate relative to a wafer holder. A controller is configured to coordinate the driving of the first and second micropositioners such that the first micropositioner applies a lateral force to the focusing ring, while the second micropositioner reduces substrate displacement caused by the reaction force generated during the driving of the first micropositioner.

18. The wafer positioning device according to claim 17, wherein, The first micropositioner includes an electromechanical micro actuator having a push rod or contact tip, and the second micropositioner includes a plurality of patterned electrodes for generating lateral electrostatic forces between the substrate and the wafer carrier.

19. The wafer positioning device according to claim 1, wherein the substrate includes a generally circular wafer body whose thickness and outer contour are compatible with transport via a semiconductor wafer transport system.

20. The wafer positioning device of claim 1, wherein a plurality of thin micropositioners are distributed circumferentially along the substrate and positioned to apply lateral forces to different circumferential portions of the focusing ring.

21. The wafer positioning device according to claim 1, wherein, The controller is configured to selectively drive different micropositioners among multiple thin micropositioners to move the focusing ring in different lateral directions.

22. The wafer positioning device according to claim 1, wherein each drive cycle of at least one of the plurality of thin micropositioners causes the focusing ring to make incremental movement; repeating the drive cycle enables the focusing ring to achieve cumulative adjustment in the range of about 1 micrometer to about 500 micrometers.

23. The wafer positioning device according to claim 1, wherein each drive cycle causes the focusing ring to move incrementally by about 0.1 micrometers or more.

24. A method for adjusting the position of a focusing ring within a plasma processing cavity, comprising the following steps: a. A wafer inspection device and a wafer positioning device according to any one of claims 1 to 23 are provided in a cassette carrier accessible to a semiconductor wafer transport system; b. Use a semiconductor wafer transport system to transport the wafer-type inspection device to the plasma processing chamber; c. Use a wafer-level inspection device to measure the positioning of the focusing ring relative to the wafer reference position; d. Determine one or more driving parameters of the wafer positioning device based on the measured position and target position of the focusing ring; e. Remove the wafer-type inspection device from the plasma processing chamber; f. Use a semiconductor wafer transport system to transport the wafer positioning device to the plasma processing chamber; as well as g. Drive the wafer positioning device according to one or more driving parameters to mechanically adjust the position of the focusing ring so that it reaches the target position.

25. The method of claim 24, further comprising: - After driving the wafer positioning device, remove the wafer positioning device from the plasma processing chamber; - Transfer the wafer-type inspection device to the plasma processing chamber; - The updated position of the focusing ring is measured using a wafer-level inspection device; as well as - When the updated position of the focusing ring exceeds the predetermined tolerance of the target position, the drive parameters are repeatedly determined and the wafer positioning device is driven.

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