Ion beam processing window based calibration method, apparatus, device, and medium

Abstract

The application relates to the technical field of ion beam processing, in particular to a calibration method and device based on an ion beam processing window, equipment and a medium. The method comprises the following steps: setting processing parameters and corresponding processing windows according to a processing point, a processing distance and a processing incident angle of an ion beam acting on a workpiece; confirming a target motion track of the workpiece according to continuous changes of the processing parameters within a preset time; confirming decomposition posture parameters of a workbench for clamping the workpiece according to the target motion track; and controlling the workbench through the decomposition posture parameters, so that the ion beam is constrained in the processing window within the preset time. The decomposition posture parameters of the workbench are inversely deduced through the processing point, the processing distance and the processing incident angle of the ion beam acting on the workpiece, so that the ion beam is constrained in the processing window, and the technical effects of high calibration accuracy, strong generalization of calibration for workpieces of different sizes and suitability for processing of curved surface workpieces are achieved.

Description

Technical Field

[0001] This application relates to the field of ion beam processing technology, and more specifically, to a calibration method, apparatus, equipment, and medium based on an ion beam processing window. Background Technology

[0002] Ion beam processing is a precision machining technique that uses high-energy ion beams to bombard material surfaces to achieve atomic-level removal or modification. Ion beam processing technology is widely used in high-precision applications such as semiconductors, optical components, and nanomaterials.

[0003] In existing technologies, ion beam processing often combines an ion beam with a multi-axis stage to achieve multi-angle machining of workpieces, such as surface correction, curved surface machining, and hemispherical surface machining. Especially in applications involving curved surface machining, the normal direction of the ion beam acting on the workpiece continuously changes with the surface curvature, causing deviations in the machining window and affecting machining accuracy. Furthermore, although existing ion beam processing equipment has calibration programs, it requires recalibration for different workpieces when workpiece dimensions or surface types change, ensuring the accuracy of the machining window calibration through workpiece calibration. Therefore, existing ion beam machining window calibration suffers from the technical problems of low calibration accuracy for curved workpieces and the need for repeated calibration for different workpieces. Summary of the Invention

[0004] This application addresses the shortcomings of existing methods by proposing a calibration method, apparatus, equipment, and medium based on an ion beam processing window to solve the technical problems of low calibration accuracy for curved workpieces and the need for repeated calibration for different workpieces.

[0005] In a first aspect, embodiments of this application provide a calibration method based on an ion beam processing window, comprising: Based on the processing point, processing distance, and processing incident angle of the ion beam acting on the workpiece, set the processing parameters and the corresponding processing window; Based on the continuous changes of the processing parameters within a preset time, the target motion trajectory of the workpiece is confirmed; Based on the target motion trajectory, the disassembled posture parameters of the worktable holding the workpiece are confirmed; The worktable is controlled by the decomposition attitude parameters so that the ion beam is constrained within the processing window for the preset time.

[0006] Specifically, the main technical concept of this application lies in using processing parameters set by processing point, processing distance, and processing incident angle to constrain the processing point and processing distance and processing incident angle of the ion beam and workpiece, thus solving the technical problem of repetitive calibration for workpieces of different sizes and curved surfaces. Simultaneously, the target motion trajectory confirmed by the processing parameters enhances the control of key processing indicators of the ion beam acting on the workpiece during coordinate transformation among the ion beam, workpiece, and worktable, improving the calibration accuracy of the ion beam. This is suitable for application scenarios where the processing point, processing distance, and processing incident angle of curved workpieces continuously change. Therefore, this application has the advantages of high calibration accuracy, strong versatility for workpieces of different sizes, and applicability to the processing of curved workpieces.

[0007] Furthermore, the decomposed attitude parameters include: translational motion and normal motion; The translational motion is defined as the parallel displacement of the worktable, and is used to confirm the adjustment values ​​of the x-axis, y-axis and / or z-axis of the worktable; The normal motion is defined as the normal displacement of the worktable, and is used to confirm the adjustment value of the rotation axis and / or tilt axis of the worktable. The translational motion and the normal motion are allocated according to the target motion trajectory.

[0008] Furthermore, when allocating the translational motion and the normal motion, the method further includes: The adjustment limit values ​​of the rotary shaft and / or the tilting shaft are preset; When the allocated value of the normal motion is greater than the adjustment limit value, the translational motion and the normal motion are redistributed until the allocated value of the normal motion is less than the adjustment limit value.

[0009] Specifically, another technical concept of this application embodiment is to simplify the difficulty of achieving the target motion trajectory based on the processing point by using translational motion and normal motion, and to improve the changing efficiency of the worktable by synchronously adjusting the translational motion and normal motion. At the same time, this application embodiment also limits large changes in normal motion by adjusting the setting of limit values, thereby avoiding fluctuations in the processing incident angle of the ion beam and improving the calibration accuracy of the processing window.

[0010] In some optional embodiments, the calibration method based on the ion beam processing window provided in this application further includes: Based on the preset time, divide the continuous unit detection time into multiple groups; The working parameters of the ion beam, consisting of the working point, working distance, and working incident angle, are obtained at each unit detection time. By comparing the operating parameters with the corresponding processing parameters, the bias of the operating parameters is obtained; Based on the bias, compensate for the translational motion and / or normal motion in the next unit detection time.

[0011] Specifically, another technical concept of this application embodiment is to compensate for the translational motion and normal motion by the bias of the working parameters, thereby ensuring the constraint of the ion beam processing window.

[0012] Furthermore, the calibration method based on the ion beam processing window provided in some optional embodiments of this application also includes: Set the quality parameters of the ion beam, including a removal peak threshold and an effective removal threshold; The peak removal amount and effective removal amount of the ion beam at each of the unit detection times are obtained; When the peak removal amount does not meet the peak removal threshold, or when the effective removal amount does not meet the effective removal threshold, the processing parameters are compensated.

[0013] Furthermore, the calibration method based on the ion beam processing window provided in some optional embodiments of this application also includes: The processing window includes: point deviation threshold, distance deviation threshold, and angle deviation threshold; Preset control ratio; Based on the conformity of the working point, working distance, working incident angle, peak removal amount, and effective removal amount with the processing window and the quality parameters, the working ratio is confirmed. When the operating ratio is greater than or equal to the control ratio, the ion beam is confirmed to be working normally.

[0014] Specifically, another technical concept of this application embodiment is to ensure that the processing parameters and processing quality of the ion beam are continuously within an acceptable range according to the setting of the control ratio, thereby improving the processing quality of ion beam processing of curved workpieces.

[0015] In some alternative implementations, confirming the target motion trajectory further includes: Based on the input dimensions of the workpiece and the reference positioning parameters of the worktable, confirm the reference coordinate parameters of the workpiece; Extract the machining coordinate parameters of the workpiece; Based on the machining coordinate parameters and the reference coordinate parameters, the offset parameters of the workpiece are determined; The target motion trajectory is compensated by the bias parameter.

[0016] Secondly, embodiments of this application provide a calibration apparatus based on an ion beam processing window, used to implement the calibration method based on an ion beam processing window provided according to any optional embodiment of the first aspect, including: An ion source, used to generate an ion beam; The worktable is used to hold the workpiece. A detection component is used to acquire the working state of the ion beam acting on the workpiece; The controller is connected to the ion source, the stage, and the detection component, respectively.

[0017] Specifically, the controller provided in this application sets the processing window based on the processing point, processing distance, and processing incident angle of the ion beam acting on the workpiece; confirms the target motion trajectory of the workpiece based on the continuous change of the processing point within a preset time; confirms the decomposed posture parameters of the worktable holding the workpiece based on the target motion trajectory; and controls the worktable through the decomposed posture parameters so that the ion beam is constrained to the processing window within a preset time.

[0018] It is understood that the beneficial effects provided by any optional embodiment of the second aspect can be understood with reference to the beneficial effects provided by any optional embodiment of the first aspect.

[0019] Thirdly, embodiments of this application provide an electronic device, including a memory, a processor, and a computer program stored in the memory, wherein the processor is configured to execute the computer program to implement the calibration method based on an ion beam processing window provided according to any optional embodiment of the first aspect.

[0020] It is understood that the beneficial effects provided by any optional embodiment of the third aspect can be understood with reference to the beneficial effects provided by any optional embodiment of the first aspect.

[0021] Fourthly, embodiments of this application provide a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements a calibration method based on an ion beam processing window according to any optional embodiment of the first aspect.

[0022] It is understood that the beneficial effects provided by any optional embodiment of the third aspect can be understood with reference to the beneficial effects provided by any optional embodiment of the first aspect.

[0023] The beneficial technical effects of the technical solutions provided in this application include: During workpiece processing, processing parameters are set by defining the processing point, distance, and incident angle of the ion beam. This ensures that these three parameters remain continuously constrained within the processing window during ion beam processing. Therefore, this embodiment eliminates the need for repeated calibration of worktables of different sizes and types; the target motion trajectory of the workpiece is determined solely by the continuous changes in processing parameters. Consequently, this embodiment optimizes the initial calibration process while ensuring workpiece calibration accuracy, improving its versatility and convenience. Furthermore, the processing parameters directly use the processing distance and incident angle, which are related to ion beam processing quality, as calibration benchmarks. This ensures that the processing point, distance, and incident angle of the ion beam remain within the constraints of the processing window for a preset time, preventing processing offset due to the decomposition of the worktable. This improves the applicability and calibration accuracy of this embodiment for curved workpieces. Therefore, this embodiment offers the advantages of high ion beam processing accuracy for curved workpieces and strong applicability to workpieces of different sizes.

[0024] Additional aspects and advantages of this application will be set forth in part in the description which follows, and will become apparent from the description or may be learned by practice of this application. Attached Figure Description

[0025] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, wherein: Figure 1 A schematic flowchart illustrating a calibration method based on an ion beam processing window provided in this application embodiment; Figure 2 A structural diagram of a calibration device based on an ion beam processing window provided in an embodiment of this application; Figure 3 This is a schematic diagram of the structure of the workbench provided in an embodiment of this application; Figure 4 A schematic diagram of ion beam processing parameters provided in the embodiments of this application; Figure 5 A schematic diagram of the processing window provided in an embodiment of this application; Figure 6 A schematic diagram illustrating the composition of the electronic device provided in the embodiments of this application; Figure label: 1. Workpiece; 2. Ion source; 3. Worktable; 4. Detection assembly; 5. Controller; 6. Vacuum chamber; 31. Base; 32. First shaft; 33. Second shaft; 34. Third shaft; 35. Rotating part; 36. Tilting part; 2000. Electronic equipment; 2001. Processor; 2002. Bus; 2003. Memory; 2004. Communication unit; 2005. Input unit; 2006. Output unit. Detailed Implementation The embodiments of this application are described below with reference to the accompanying drawings. It should be understood that the embodiments described below with reference to the accompanying drawings are exemplary descriptions for explaining the technical solutions of the embodiments of this application, and do not constitute a limitation on the technical solutions of the embodiments of this application.

[0026] Those skilled in the art will understand that, unless specifically stated otherwise, the terms "described" and "the" as used herein may also include plural forms. It should be further understood that the term "comprising" as used in the specification of this application means the presence of the stated features, integers, steps, operations, elements, and / or components, but does not exclude other features, information, data, steps, operations, elements, components, and / or combinations thereof supported by the art. The term "and / or" as used herein refers to at least one of the items defined by the term; for example, "A and / or B" can be implemented as "A," or as "B," or as "A and B."

[0027] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in further detail below with reference to the accompanying drawings.

[0028] In related technologies, methods for high-precision optical surface correction, freeform surface processing, and precision shaping of hemispherical and aspherical surfaces using ion beams have been disclosed for applications such as path establishment, incident angle calculation, dwell time allocation, and multi-axis linkage processing around aspherical ion beam shaping. Schemes for compensating for insufficient translation axis travel and correcting motion coordinates by oscillating the rotation axis have also been disclosed. However, these technologies have the following limitations: First, when the workpiece surface is a hemispherical, aspherical, or other free-form surface, the surface normal changes continuously with position. To maintain a stable removal function, it is usually necessary to maintain the normal relationship between the ion beam and the local surface. Related technologies employ single-axis translation, single-axis rotation, or a simple combination of both. However, the local normal, beam action point coordinates, and relative distance from the ion source to the surface at different positions on the workpiece surface cannot be simultaneously and independently adjusted. This results in changes in the working distance and incident angle of the ion beam as the sample moves to different processing positions, leading to shifts in beam spot morphology, power density distribution, and removal characteristics per unit time. Therefore, while single-axis or multi-axis motion stages can achieve continuous workpiece displacement within a certain range, for curved workpieces with rapidly changing normals and large curvature variations, they can only ensure that the ion beam acts on the processing point of workpiece 1, but cannot satisfy the normal and distance matching of the processing point, resulting in low ion beam calibration accuracy.

[0029] Secondly, for application scenarios with variations in sample size, fixture processing, and clamping conditions, related technologies often require individual control of each sample. Even if the stage itself has multi-axis linkage capabilities, it is impossible to reuse the same set of control parameters for different samples. Considering that the coordinate chain from the stage reference coordinates to the "actual point of action of the ion beam" in related technologies contains multiple levels of geometric offsets, changes in sample size or clamping conditions will alter the deviation between the actual point of action of the beam and the theoretical target point. This makes it difficult for related technologies to be adapted individually for each sample and to switch quickly.

[0030] Third, for in-situ or out-of-situ monitoring, especially optical field detection tools, the incident angle and working distance of the detection point need to be controlled; otherwise, the consistency between the monitoring results and the processing status will be affected. Common optical measurement techniques work based on the propagation angle of light, focusing state, or triangulation relationships. For example, in triangulation, the distance measurement result depends on changes in the optical path angle and is sensitive to distance changes, resulting in the detection device not being able to guarantee the same accuracy under different postures and distances. Therefore, when facing the needs of in-situ or out-of-situ optical monitoring, related technologies lack a holistic solution that integrates the incident angle and working distance of the detection observation point with processing control, thus affecting processing accuracy.

[0031] The research and development approach of this application includes setting processing parameters by applying an ion beam to the workpiece at the processing point, processing distance, and processing incident angle. This ensures that the processing point, processing distance, and processing incident angle are continuously constrained within the processing window during ion beam processing, reducing the impact of continuous stage movement on these parameters. This allows the application to ensure that the processing point, processing distance, and processing incident angle meet processing requirements simply by confirming the target motion trajectory of the workpiece based on the continuous changes in the processing parameters within the processing window, thus solving the technical problem of processing offset during multi-axis motion in related technologies. Furthermore, the embodiments of this application can optimize the initial calibration process of the workpiece while ensuring calibration accuracy, solving the technical problem of requiring repeated calibration for workpieces of different sizes in related technologies. Therefore, the embodiments of this application have the advantages of high ion beam processing accuracy for curved workpieces and strong applicability to workpieces of different sizes, aiming to overcome the aforementioned technical limitations of related technologies.

[0032] The technical solution of this application and how it solves the above-mentioned technical problems are described in detail below with specific embodiments. It should be noted that the following embodiments can be referenced, borrowed, or combined with each other, and the same terms, similar features, and similar implementation steps in different embodiments will not be described again.

[0033] Based on the same inventive concept, this application provides a calibration device based on an ion beam processing window, including: an ion source 2, a stage 3, a detection component 4, a controller 5, and a vacuum chamber 6. Please refer to... Figure 2 This is a structural diagram of a calibration device based on an ion beam processing window provided in an embodiment of this application.

[0034] Ion source 2 is used to generate an ion beam. Examples include Kaufman ion sources, RF ion sources, and electron cyclotron resonance ion sources. It is understood that the ion beam generated by ion source 2 is often applied to workpiece 1 using a point-to-point irradiation method. The working state of the ion beam is adjusted by moving the worktable 3 holding workpiece 1 relative to ion source 2.

[0035] Worktable 3 includes: base 31, first shaft section 32, second shaft section 33, third shaft section 34, rotary section 35, and tilting section 36. Please refer to [reference needed]. Figure 3 This is a schematic diagram of the structure of the workbench 3 provided in an embodiment of this application. Exemplary: In this embodiment, the workbench 3 is constructed by stacking layers sequentially, consisting of a base 31, a first shaft portion 32, a second shaft portion 33, a third shaft portion 34, a rotating portion 35, and a tilting portion 36.

[0036] The working principle of the worktable 3 is as follows: the workpiece 1 is clamped by a fixture (not shown in the figure) set on the tilting part 36. The first shaft part 32 is slidably connected to the base 31, so that the first shaft part 32 can slide back and forth along the track of the base 31 in the X-axis direction (refer to the dashed arrow), thereby realizing the adjustment of the workpiece 1 in the X-axis direction. Similarly, the second shaft part 33 is slidably connected to the first shaft part 32, thereby realizing the adjustment of the workpiece 1 in the Y-axis direction. The third shaft part 34 is slidably connected to the second shaft part 33, thereby realizing the adjustment of the workpiece 1 in the Z-axis direction. At the same time, the rotating part 35 is rotatably connected to the third shaft part 34 through an arc-shaped structure, so that the workpiece 1 can rotate in the α direction by rotating the rotating part 35 around the α direction. Similarly, the tilting part 36 is rotatably connected to the rotating part 35, thereby realizing the swinging of the workpiece 1 in the β direction. Therefore, the worktable 3 provided in this application embodiment can adjust the workpiece 1 from the X-axis, Y-axis, Z-axis, α direction and β direction to realize the five-axis movement of the workpiece 1.

[0037] The detection component 4 is used to acquire the working status of the ion beam acting on the workpiece 1. For example, in-situ monitoring, ex-situ monitoring, etc. The detection component 4 can be configured as a probe, mass spectrometer, electron microscope, interferometer, etc., to detect key control parameters such as the working point of the ion beam acting on the workpiece 1, processing distance, processing incident angle, removal peak, beam spot center, and effective removal amount.

[0038] The controller 5, connected to the ion source 2, the worktable 3, and the detection component 4, controls the movement of the worktable 3 based on the key parameters of the ion source 2 acting on the workpiece 1. This ensures that the processing window of the ion beam acting on the workpiece 1 is within the allowable range, thereby ensuring the calibration accuracy of the ion beam. It is understood that the controller 5 also includes an interactive component for manual control and input of parameters such as the dimensions of the workpiece 1, the fixture dimensions, and the threshold of the processing window.

[0039] Vacuum chamber 6 is used to create a vacuum atmosphere for processing workpiece 1. For example, vacuum chamber 6 can be achieved through a sealed cavity and a vacuum pump connected to the sealed cavity. After the vacuum pump evacuates the sealed cavity, a vacuum atmosphere is created inside the sealed cavity.

[0040] Therefore, in this embodiment, the workpiece 1 is clamped by the worktable 3 and placed in the vacuum chamber 6, which provides a vacuum atmosphere for processing the workpiece 1. The ion source 2 is located at the entrance of the vacuum chamber 6 and irradiates the workpiece 1 on the worktable 3. The detection component 4 can be located inside or outside the vacuum chamber 6 to detect the working status of the workpiece 1, so that the controller 5 can realize the ion beam processing of the workpiece 1 through the coordinated control of the ion source 2, the worktable 3, and the detection component 4.

[0041] Based on the same inventive concept, and according to the calibration device based on the ion beam processing window provided in the embodiments of this application, the embodiments of this application also provide a calibration method based on the ion beam processing window. Please refer to... Figure 1 This is a flowchart illustrating a calibration method based on an ion beam processing window provided in this application embodiment. The calibration method based on an ion beam processing window provided in this application embodiment includes the following steps: Step S10: Based on the processing point, processing distance, and processing incident angle of the ion beam acting on workpiece 1, set the processing parameters and corresponding processing window, including: The processing point refers to the location where the ion beam spot acts on workpiece 1. Please refer to [reference needed]. Figure 4 This is a schematic diagram of the ion beam processing parameters provided in the embodiments of this application, for example, the processing point marked by point P. The processing distance refers to the straight-line distance from the emission point of the ion source 2 to the processing point acting on the workpiece 1, for example, the distance marked by line segment S. The processing incident angle refers to the angle between the propagation centerline of the ion beam and the normal line between the processing point and the workpiece 1, for example, the angle marked by δ. Therefore, the processing window refers to the allowable range of the processing point, processing distance, and processing incident angle of the ion beam acting on the workpiece 1. Please refer to... Figure 5 This is a schematic diagram of the processing window provided in the embodiment of this application. The processing window is shown in the area indicated by the narrow dashed frame. The processing window is used to limit the processing point, processing distance and processing incident angle of the ion beam applied to the workpiece 1 within a certain range, thereby ensuring the calibration accuracy of the ion beam.

[0042] It is understandable that the processing point, processing distance, and processing incident angle are determined based on the preset removal amount of the ion beam acting on workpiece 1. That is, the processing point can be understood as the location on workpiece 1 where removal is required. The effective input power density of the ion beam acting on the processing point is determined based on the processing distance and processing incident angle. Therefore, the effective input power density of the ion beam is determined based on the preset removal amount of workpiece 1 at the processing point, and conversely, the processing distance and processing incident angle of the ion beam are determined. Meanwhile, the preset removal amount refers to the volume that the ion beam needs to remove at the processing point.

[0043] Step S20: Based on the continuous changes of processing parameters within a preset time, confirm the target motion trajectory of workpiece 1, including: During the processing of workpiece 1, this application can determine the processing path of the ion beam acting on the processing points of workpiece 1, as well as the processing distance and processing incident angle of the ion beam along the processing path, based on the preset removal amount of each processing point that needs to be processed on the surface of workpiece 1. Therefore, the target motion trajectory can be decomposed into the processing path formed by the continuous change of processing points over a preset time, and the processing distance and processing incident angle along the processing path. That is, this application can match the target motion trajectory of workpiece 1 based on the continuous change of processing parameters over a preset time. In other words, when workpiece 1 moves according to the target motion trajectory, the continuous change of processing parameters over a preset time can be achieved. Since the target motion trajectory of workpiece 1 in this application embodiment is anchored according to the continuous change of processing parameters over a preset time, this application can decouple the limitation of the workpiece 1 surface on the target motion trajectory. This means that this application embodiment is not limited by the surface shape of hemispherical, aspherical or other free-form surfaces. It only needs to confirm the target motion trajectory of workpiece 1 according to the continuous change of processing parameters of various surfaces over a preset time. Thus, this application embodiment does not need to repeatedly calibrate the surface workpiece 1 of different sizes, and can also achieve the fitting of the continuous change of processing points of each surface, thereby being applicable to the processing of surface workpiece 1 of different sizes and types.

[0044] It is understandable that the set of machining points {P} on the surface of workpiece 1 is known to consist of all machining points. i}, where i takes values ​​from 1 to n, and the value of i corresponds one-to-one with a time node, then P1, P2, ..., Pn n These are sequentially connected to form a processing path within a preset time, and each processing point {P} i The amount of D removed i Composition {D i The set of}, and the amount removed D i Related to the effective power density of the ion beam, i.e., based on the processing distance L i The resulting attenuation coefficient γ1 of the ion beam output power density and the processing incident angle δ i The product of the resulting scattering coefficient γ² and the output power density is the effective power density, which in turn is related to the amount of material removed, D. i Related, thus based on the amount removed {D i The set {L} confirms i δ i The set of processing parameters for workpiece 1 is defined as {P}. i L i δ i}. Meanwhile, the processing window in this application refers to the allowable range of processing parameters, that is, the set of processing windows is {P}. i ±p1, L i ±l1,δ i±δ1}, p1 refers to the allowable threshold of the processing point, l1 refers to the allowable threshold of the processing distance, and δ1 refers to the allowable threshold of the processing point.

[0045] In some optional implementations, embodiments of this application determine the reference coordinate parameters of workpiece 1 based on the input dimensions of workpiece 1 and the reference positioning parameters of worktable 3; extract the machining coordinate parameters of workpiece 1; determine the offset parameters of workpiece 1 based on the machining coordinate parameters and the reference coordinate parameters; and compensate for the target motion trajectory using the offset parameters. It is understood that since there may be errors in the connection between workpiece 1 and the fixture, and errors in the installation position of worktable 3, embodiments of this application compensate for the target motion trajectory using offset parameters, eliminating errors in the dimensions of workpiece 1, fixtures, and worktable 3, thereby improving the accuracy of the target motion trajectory generation.

[0046] Exemplary: A processing parameter (P) for an embodiment of this application i L i δ i In application scenarios involving curved workpieces of different sizes or worktables with different structures, the calibration accuracy of the ion beam and the processing point P are crucial. i The reference coordinates of the reference coordinate system are related, while the machining distance L i and processing incident angle δ i It is unaffected by the clamping error of workpiece 1 and the installation error of worktable 3. Therefore, if the machining point P is known... i The coordinates of the reference coordinate system can be obtained by determining the machining point P of the clamped workpiece 1. i The working coordinates are measured to obtain the working coordinates. Then, in this embodiment of the application, the machining point P is determined using the working coordinates. i The reference coordinates are corrected to achieve the machining point P in the machining parameters. i The compensation makes the processing parameters (P) i L i δ i It is not affected by the size of the workpiece 1 or the structure of the worktable 3, thereby improving the versatility of the embodiments of this application.

[0047] Step S30: Based on the target motion trajectory, confirm the disassembled posture parameters of the worktable 3 holding the workpiece 1, including: Once the target motion trajectory of workpiece 1 is confirmed, workpiece 1 can be adjusted using the worktable 3 that holds it, thereby achieving the target motion trajectory. In other words, the decomposed attitude parameters of the worktable 3 can be confirmed through the target motion trajectory. Figure 2Analysis of the worktable 3 shows that the machining point of workpiece 1 can be decomposed into movements along the X-axis, Y-axis, Z-axis, α-axis, and β-axis, thereby achieving continuous changes in the machining point. Specifically, the decomposed attitude parameters in this embodiment include {x} i y i , z i α i ,β i The value of i is 1 to n and is related to the preset time. Thus, by continuously adjusting a series of decomposed attitude parameters over the preset time, the worktable 3 is driven to move, and the target motion trajectory is fitted.

[0048] It is understandable that the set of processing parameters {P} i L i δ i The position of the machining point on workpiece 1 in the reference coordinate system and the corresponding surface orientation of that point are defined by the machining point on workpiece 1, the distance between the machining point and the ion beam emission point, and the angle between the line connecting the machining point and the emission point and the normal line of the machining point. Therefore, the embodiments of this application can decompose the position of the machining point in the reference coordinate system into the linear axis coordinates {x} of the worktable 3. i y i z i} and the rotation axis coordinates of the surface orientation {α i ,β i}, that is, the set of processing parameters {P i L i δ i} corresponds to at least one definite set of decomposed attitude parameters {x i y i , z i α i ,β i That is, the embodiments of this application can decompose the attitude parameter set {x}. i y i , z i α i ,β i Fitting the set of processing parameters {P} i L i δ i Furthermore, the reference coordinate system refers to the basic coordinate system of the calibration device based on the ion beam processing window provided in the embodiments of this application, such as the device's global coordinate system, the processing coordinate system of the worktable 3, etc.

[0049] Furthermore, the machining point P of workpiece 1 i Let L be a point defined on workpiece 1, and the machining distance be L. i For processing point P iThis corresponds to a defined distance between the emission points of ion source 2, but in the reference coordinate system, the same processing distance L... i It can be distributed on the surface of a sphere with the point of emission as its center. Therefore, the incident angle δ is processed. i Processing point P can be processed. i Positioning on the surface of the sphere also involves positioning the surface normal of workpiece 1. Therefore, the decomposed attitude parameters of this application include: translational motion and normal motion, used to respectively confirm the parallel displacement and normal displacement of the worktable 3, thereby enabling this application to allocate translational motion {x} according to the target motion trajectory. i y i z i} and normal motion {α i ,β i}, together achieve the processing parameters {P i L i δ i It is understandable that the normal motion quantity {α} i ,β i} refers to the rotational motion within the reference coordinate system, except for changing the machining point P of workpiece 1. i The outward orientation will also simultaneously change the machining point P of workpiece 1. i Spatial coordinates.

[0050] In some alternative embodiments, the processing parameters {P} i L i δ i} has at least one set of {x} in the reference coordinate system i y i , z i α i ,β i}, and when the normal motion {α i ,β i If the assigned value is too large, it will cause the working point P to be affected. i Significant fluctuations in the rotation angle can cause the ion beam to deviate from the processing window, affecting the processing quality of the curved workpiece 1. Therefore, this application presets adjustment limit values ​​for the rotary axis and / or tilt axis to ensure that the distribution values ​​of the rotary axis and / or tilt axis are limited within the adjustment limit values, preventing excessive rotation of the rotary axis and / or tilt axis, which could lead to excessive rotation of the working point P of the workpiece 1. i The jumping motion improves the accuracy of fitting the machining parameters to the decomposed attitude parameters, and avoids the ion beam deviating from the machining window, which would affect the machining quality of the curved workpiece 1. For example: the machining point P of workpiece 1 is known. i The coordinates in the reference coordinate system are (X) I Y I Z I The next processing point P after displacement i+1 The coordinates of the reference coordinate system are (X)I+1 Y I+1 Z I+1 When considering only the displacement of the machining point P on workpiece 1, the machining point P... i To P i+1 The change in the reference coordinates is (X I+1 -X I Y I+1 -Y I Z I+1 -Z I Based on the above analysis of the worktable 1, the first axis 32, the second axis 33, and the third axis 34 are used to control linear displacement, while the first axis 32 can only control X-axis displacement. I To X I+1 Due to the change, the second axis 33 can only control Y. I To Y I+1 Due to the change, the third axis section 34 can only control Z. I To Z I+1 The change, and the rotary axis 35 can at least control X I To X I+1 Y I To Y I+1 and Z I To Z I+1 With at least two coordinates changing, the tilt axis 36 can control at least the X-axis. I To X I+1 Y I To Y I+1 and Z I To Z I+1 The changes in the three coordinates. Therefore, this application can realize the coordinate quantity (X) through the weight ratio, i.e., the allocation value, of the first axis 32, the second axis 33, the third axis 34, the rotation axis 35, and the tilt axis 36. I+1 -X I Y I+1 -Y I Z I+1 -Z I (Changes).

[0051] For example: Configure the spatial coordinate adjustment weighting of translational motion to normal motion as 0.8:0.2. Then, limit the rotation angle of the rotary axis 35 and / or the tilt axis 36 according to the adjustment limit values ​​of the rotary axis 35 and the tilt axis 36. For example, if the adjustment limit value is configured so that the rotation angle of the rotary axis 35 is 5°, when the normal motion completes a 0.2 reference coordinate change, the rotation angle of the rotary axis 35 is 10°, which is greater than the 5° adjustment limit value. Therefore, it is determined that the allocation value of the rotary axis 35 is greater than the adjustment limit value, and the weighting ratio of translational motion to normal motion is reallocated, for example, to 9:1. At this time, when the normal motion completes a 0.1 reference coordinate change, the rotation angle of the rotary axis 35 is 3°, which is less than the 5° adjustment limit value. Therefore, it is determined that the allocation value of the rotary axis 35 is less than the adjustment limit value, and the worktable 3 is controlled by the translational motion to normal motion according to a weighting ratio of 9:1. Similarly, the adjustment and limiting process of the tilting shaft 36 is similar to that of the rotary shaft 35. Since the rotation angle of the rotary shaft 35 and the tilting shaft 36 is within the limited range during the continuous adjustment of the working point, the fluctuation of the working point during continuous changes can be reduced, thereby improving the calibration accuracy of the ion beam.

[0052] Step S40: Control the stage 3 by decomposing the attitude parameters to constrain the ion beam within the processing window for a preset time, including: Because the set of attitude parameters {x} is decomposed i y i , z i α i ,β i} can fit the set of processing parameters {P} i L i δ i In this application embodiment, the attitude parameter set {x} can be decomposed. i y i , z i α i ,β i Within a preset time period, the worktable 3 holding workpiece 1 is specifically controlled, thereby controlling the set of machining parameters {P} within the preset time period. i L i δ i The ion beam in this embodiment is fitted to a processing window within a preset time. The processing point, processing distance, and processing incident angle of the ion beam constrained within the processing window are all in a preset working state, thereby enabling a specific removal amount to be achieved at a specific processing point, thus improving the processing quality of the curved workpiece 1 by the ion beam.

[0053] Optionally, embodiments of this application decompose the attitude parameter set {x} i y i , z i αi ,β i} Implemented processing parameter set {P i L i δ i The fitting of} makes the ion beam constrained to the set {P} of the processing window. i ±p1, L i ±l1,δ i ±δ1}, but the operating point P of the ion beam's operating parameters within the preset time. j Working distance L j and working incident angle δ j Machining point P with machining parameters i Processing distance L i and processing incident angle δ i Not entirely the same, if we decompose the attitude parameter set {x i y i z i α i ,β i Continuous control of the worktable 3 will cause the workpiece 1 to accumulate errors over multiple consecutive unit detection times, thereby causing the ion beam to deviate from the processing window. Therefore, in this embodiment, multiple consecutive unit detection times are divided according to a preset time, and the working point P of the ion beam in each unit detection time is obtained. j Working distance L j and working incident angle δ j Compare the machining parameters corresponding to the working parameters at machining point P. i Processing distance L i and processing incident angle δ i Obtain the bias P of the working parameters. ij =P i -P j L ij =L i -L j δ ij =δ i -δ j Thus through the bias P ijj L ij δ ij For the next processing parameter P i+1 L i+1 δ i+1 Perform compensation and obtain the compensated P. i+1 ’ =P i+1 -P ij L i+1 ’ =L i+1 -L ij δ i+1’ =δ i+1 -δ ij Thus through P i+1 ’ L i+1 ’ δ i+1 ’ Confirm the decomposed attitude parameters x after compensation i+1 ’ y i+1 ’ , z i+1 ’ α i+1 ’ ,β i+1 ’ Thus, the bias P ijj L ij δ ij Corrections are made to eliminate adjustment errors in the decomposition attitude parameters and improve the calibration accuracy of the ion beam.

[0054] Furthermore, this application embodiment also includes: setting ion beam quality parameters, including a peak removal threshold and an effective removal threshold. Simultaneously, this application embodiment obtains the peak removal amount and effective removal amount of the ion beam at each unit detection time. When the peak removal amount does not meet the peak removal threshold, or when the effective removal amount does not meet the effective removal threshold, the processing parameters are compensated. Although the ion beam is constrained within a processing window and can basically remove material at a predetermined effective power density, the actual effective power density obtained at the processing point fluctuates due to the influence of actual operating conditions, such as vacuum conditions, system errors, and material reflectivity. Therefore, this application embodiment can control the processing quality of the ion beam through the peak removal threshold and the effective removal threshold included in the quality parameters. For example, when the peak removal amount is less than the peak removal threshold, the effective power density can be increased to obtain a new processing distance and processing incident angle, thereby increasing the actual peak removal amount to approximate the peak removal threshold; conversely, when the peak removal amount is greater than the peak removal threshold, the effective power density can be decreased to obtain a new processing distance and processing incident angle, thereby decreasing the actual peak removal amount to approximate the peak removal threshold. Similarly, when the effective removal amount is less than or greater than the effective removal threshold, a new processing distance and processing incident angle can be obtained by increasing or decreasing the effective power density, thereby increasing or decreasing the actual removal peak amount so that the actual removal peak amount approaches the removal peak threshold. This application embodiment can further improve the processing quality of the embodiment by adjusting the quality parameters.

[0055] In some alternative implementations, the processing window includes: a point deviation threshold, a distance deviation threshold, and an angle deviation threshold, Pi ±p1, L i ±l1,δ i ±δ1. This application embodiment also presets a control ratio, for example: 60%. The working ratio is confirmed based on the conformity of the working point, working distance, working incident angle, peak removal amount, and effective removal amount with the processing window and quality parameters. For example: This application embodiment detects five parameters: working point, working distance, working incident angle, peak removal amount, and effective removal amount, which are respectively the working point P... i +p2, Working distance L i +l2, Working incident angle δ i -δ2, peak removal amount Ri-r2, and effective removal amount H i +h2. When the working point P i +p2 is greater than the point deviation threshold P i When +p1 is applied, the working point deviates and does not meet the point deviation threshold. Similarly, the working distance L... i +l2 is less than the distance deviation threshold L i At +l1, the working distance meets the distance deviation threshold, and the working incident angle δ i -δ2>Angle deviation threshold δ i -δ1, the working incident angle meets the angle deviation threshold, the peak removal amount Ri-r2 is less than the peak removal threshold Ri-r1, the peak removal amount does not meet the peak removal threshold, and the effective removal amount H i +h2 is less than the peak threshold H for removal. i +h1, if the effective removal amount meets the effective removal threshold, then the compliance rate of the above detection values ​​is 0+1+1+0+1=3, and the compliance rate is (1+1+1) / 5=60%. The working ratio equals the control ratio, confirming that the ion beam is working normally; conversely, for example: when the working point P... i +p2 is greater than the point deviation threshold P i When +p1 is applied, the working point deviates and does not meet the point deviation threshold. Similarly, the working distance L... i +l2 is greater than the distance deviation threshold L i At +l1, the working distance does not meet the distance deviation threshold, and the working incident angle δ i -δ2>Angle deviation threshold δ i -δ1, the working incident angle meets the angle deviation threshold, the peak removal amount Ri-r2 is less than the peak removal threshold Ri-r1, the peak removal amount does not meet the peak removal threshold, and the effective removal amount H i +h2 is less than the peak threshold H for removal. i+h1, if the effective removal amount meets the effective removal threshold, then the compliance rate of the above detection value is 0+0+1+0+1=2, and the compliance rate is (1+1) / 5=40%, and an ion beam malfunction is reported. Therefore, in this embodiment, the decomposed attitude parameters obtained from the target motion trajectory can be adjusted according to the compliance of each parameter under actual working conditions, making the accuracy of this application higher. It can be understood that the peak removal amount refers to the removal depth of the workpiece processing point by the beam spot center of the ion beam within a unit detection time. At the same time, the effective removal amount refers to the total removal volume of the workpiece processing point by the ion beam within a unit detection time.

[0056] In summary, the calibration method based on the ion beam processing window provided in this application is applicable to workpieces 1 including but not limited to the following three types: The first category consists of workpieces with handles or thin-walled curved surfaces, such as hemispherical resonators and shell-type inertial devices.

[0057] The second category includes ultra-smooth plane mirrors, spherical mirrors, aspherical mirrors, freeform surface mirror assemblies, or high-precision optical substrates.

[0058] The third category includes diffractive optical devices, micro / nano optical devices, or their master models that have characteristics of angle gradient, depth gradient, period gradient, or duty cycle gradient.

[0059] Controller 5 calls different beam calibration methods, redeposition suppression models and path planning strategies according to the type of object to be processed, so that the processing point can meet the target incident angle and working distance while taking into account surface convergence, surface quality preservation or micro-nano structure morphology preservation.

[0060] Based on the same inventive concept, this application provides an electronic device, please refer to... Figure 6 This is a schematic diagram illustrating the composition of an electronic device provided in an embodiment of this application. Figure 6 The illustrated electronic device 2000 includes a processor 2001 and a memory 2003. The processor 2001 and the memory 2003 are communicatively connected, for example, via a bus 2002.

[0061] Processor 2001 may be a CPU (Central Processing Unit), a general-purpose processor, a DSP (Digital Signal Processor), an ASIC (Application Specific Integrated Circuit), an FPGA (Field-Programmable Gate Array), or other programmable logic devices, transistor logic devices, hardware components, or any combination thereof. It can implement or execute the various exemplary logic blocks, modules, and circuits described in conjunction with the disclosure of this application. Processor 2001 may also be a combination that implements computing functions, such as including one or more microprocessor combinations, a combination of a DSP and a microprocessor, etc.

[0062] Bus 2002 may include a pathway for transmitting information between the aforementioned components. Bus 2002 may be a PCI (Peripheral Component Interconnect) bus or an EISA (Extended Industry Standard Architecture) bus, etc. Bus 2002 can be divided into address bus, data bus, control bus, etc. For ease of representation, Figure 6 The bus is represented by a single thick line, but this does not mean that there is only one bus or one type of bus.

[0063] The memory 2003 may be ROM (Read-Only Memory) or other types of static storage devices capable of storing static information and instructions, RAM (Random Access Memory) or other types of dynamic storage devices capable of storing information and instructions, or EEPROM (Electrically Erasable Programmable Read Only Memory), CD-ROM (Compact Disc Read-Only Memory) or other optical disc storage, optical disc storage (including compressed optical discs, laser discs, optical discs, digital universal optical discs, Blu-ray discs, etc.), magnetic disk storage media or other magnetic storage devices, or any other medium capable of carrying or storing desired program code in the form of instructions or data structures and accessible by a computer, but not limited thereto.

[0064] Optionally, the electronic device 2000 may also include a communication unit 2004. The communication unit 2004 can be used for receiving and transmitting signals. The communication unit 2004 allows the electronic device 2000 to communicate wirelessly or wiredly with other devices to exchange data. It should be noted that in practical applications, the communication unit 2004 is not limited to one.

[0065] Optionally, the electronic device 2000 may further include an input unit 2005. The input unit 2005 can be used to receive input numbers, characters, images, and / or sound information, or to generate key signal inputs related to user settings and function control of the electronic device 2000. The input unit 2005 may include, but is not limited to, one or more of the following: a touchscreen, a physical keyboard, function keys (such as volume control buttons, power buttons, etc.), a trackball, a mouse, a joystick, a camera, a microphone, etc.

[0066] Optionally, the electronic device 2000 may also include an output unit 2006. The output unit 2006 can be used to output or display information processed by the processor 2001. The output unit 2006 may include, but is not limited to, one or more of a display device, a speaker, a vibration device, etc.

[0067] Although Figure 6 An electronic device 2000 with various devices is shown; however, it should be understood that it is not required to implement or possess all of the devices shown. More or fewer devices may be implemented or possessed alternatively.

[0068] Optionally, the memory 2003 is used to store a computer program for executing the scheme of this application, and the execution is controlled by the processor 2001. The processor 2001 is used to execute the computer program stored in the memory 2003 to implement any of the calibration methods, apparatus, devices and media based on ion beam processing windows provided in the embodiments of this application.

[0069] Based on the same inventive concept, embodiments of this application provide a computer-readable storage medium storing a computer program, which, when executed by an electronic device / processor, implements the calibration method, apparatus, device, and medium based on the ion beam processing window provided in any optional embodiment of this application.

[0070] By applying the embodiments of this application, at least the following beneficial effects can be achieved: By setting the processing parameters—processing point, processing distance, and processing incident angle—for the ion beam applied to workpiece 1, these parameters are continuously constrained within the processing window during the ion beam processing of workpiece 1. This reduces the impact of the continuous movement of the worktable 3 on the ion beam processing point, processing distance, and processing incident angle. Therefore, this application only needs to confirm the target motion trajectory of workpiece 1 based on the continuous changes in the processing parameters within the processing window to ensure that the ion beam processing point, processing distance, and processing incident angle meet the processing requirements, thus solving the technical problem of processing offset due to multi-axis motion in related technologies. Simultaneously, this application's embodiment can optimize the initial calibration process of workpiece 1 while ensuring the calibration accuracy of workpiece 1, solving the technical problem in related technologies that requires repeated calibration of workpieces 1 of different sizes. Therefore, this application's embodiment has the advantages of high ion beam processing accuracy for curved workpieces 1 and strong applicability to workpieces 1 of different sizes, aiming to overcome the aforementioned technical limitations of related technologies.

[0071] In the description of this application, the terms "center," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicate directions or positional relationships based on the exemplary directions or positional relationships shown in the accompanying drawings. They are used to facilitate the description or simplification of the embodiments of this application and are not intended to indicate or imply that the device or component referred to must have a specific orientation or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0072] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, unless otherwise stated, "a plurality of" means two or more.

[0073] In the description of this specification, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0074] The above description is only a partial implementation of this application. It should be noted that for those skilled in the art, other similar implementation methods based on the technical concept of this application, without departing from the technical concept of this application, also fall within the protection scope of the embodiments of this application.

Claims

1. A calibration method based on an ion beam processing window, characterized in that, include: Based on the processing point, processing distance, and processing incident angle of the ion beam acting on the workpiece, set the processing parameters and the corresponding processing window; Based on the continuous changes of the processing parameters within a preset time, the target motion trajectory of the workpiece is confirmed; Based on the target motion trajectory, the disassembled posture parameters of the worktable holding the workpiece are confirmed; The worktable is controlled by the decomposition attitude parameters so that the ion beam is constrained within the processing window for the preset time.

2. The calibration method based on the ion beam processing window according to claim 1, characterized in that, The decomposed attitude parameters include: translational motion and normal motion; The translational motion is defined as the parallel displacement of the worktable, and is used to confirm the adjustment values ​​of the x-axis, y-axis and / or z-axis of the worktable; The normal motion is defined as the normal displacement of the worktable, and is used to confirm the adjustment value of the rotation axis and / or tilt axis of the worktable. The translational motion and the normal motion are allocated according to the target motion trajectory.

3. The calibration method based on the ion beam processing window according to claim 2, characterized in that, When allocating the translational motion and the normal motion, the method further includes: The adjustment limit values ​​of the rotary shaft and / or the tilting shaft are preset; When the allocated value of the normal motion is greater than the adjustment limit value, the translational motion and the normal motion are redistributed until the allocated value of the normal motion is less than the adjustment limit value.

4. The calibration method based on the ion beam processing window according to claim 2, characterized in that, Also includes: Based on the preset time, divide the continuous unit detection time into multiple groups; The working parameters of the ion beam, consisting of the working point, working distance, and working incident angle, are obtained at each unit detection time. By comparing the operating parameters with the corresponding processing parameters, the bias of the operating parameters is obtained; Based on the bias, compensate for the translational motion and / or normal motion in the next unit detection time.

5. The calibration method based on the ion beam processing window according to claim 4, characterized in that, Also includes: Set the quality parameters of the ion beam, including a removal peak threshold and an effective removal threshold; The peak removal amount and effective removal amount of the ion beam at each of the unit detection times are obtained; When the peak removal amount does not meet the peak removal threshold, or when the effective removal amount does not meet the effective removal threshold, the processing parameters are compensated.

6. The calibration method based on the ion beam processing window according to claim 5, characterized in that, The processing window includes: point deviation threshold, distance deviation threshold, and angle deviation threshold; Preset control ratio; Based on the conformity of the working point, working distance, working incident angle, peak removal amount, and effective removal amount with the processing window and the quality parameters, the working ratio is confirmed. When the operating ratio is greater than or equal to the control ratio, the ion beam is confirmed to be working normally.

7. The calibration method based on the ion beam processing window according to claim 1, characterized in that, When confirming the target motion trajectory, the method further includes: Based on the input dimensions of the workpiece and the reference positioning parameters of the worktable, confirm the reference coordinate parameters of the workpiece; Extract the machining coordinate parameters of the workpiece; Based on the machining coordinate parameters and the reference coordinate parameters, the offset parameters of the workpiece are determined; The target motion trajectory is compensated by the bias parameter.

8. A calibration apparatus based on an ion beam processing window, used to implement the calibration method based on an ion beam processing window as described in any one of claims 1-7, characterized in that, include: An ion source, used to generate an ion beam; The worktable is used to hold the workpiece. A detection component is used to acquire the working state of the ion beam acting on the workpiece; The controller is connected to the ion source, the stage, and the detection component, respectively.

9. An electronic device comprising a memory, a processor, and a computer program stored in the memory, characterized in that, The processor is used to execute the computer program to implement the calibration method based on the ion beam processing window according to any one of claims 1-7.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by the processor, it implements the calibration method based on the ion beam processing window as described in any one of claims 1-7.

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