Semiconductor process equipment and its mounting base assembly

Abstract

The present disclosure provides a semiconductor process apparatus and a mounting base assembly thereof. The mounting base assembly comprises a first electrically conductive portion for electrically contacting a carrier device in use, and a second electrically conductive portion for grounding in use and relatively rotatable with the first electrically conductive portion about a rotation axis. The first electrically conductive portion electrically contacts the second electrically conductive portion when the first electrically conductive portion and the second electrically conductive portion are relatively rotated to a first relative angular position, and the first electrically conductive portion is misaligned with the second electrically conductive portion for electrical insulation when the first electrically conductive portion and the second electrically conductive portion are relatively rotated to a second relative angular position.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor manufacturing, and more specifically, to a semiconductor process apparatus and its mounting base assembly. Background Technology

[0002] Plasma equipment is widely used in the manufacturing processes of semiconductors, solar cells, and flat panel displays. Common plasma sources in current manufacturing processes include direct current discharge, inductively coupled plasma (ICP), capacitively coupled plasma (CCP), and electron cyclotron resonance (ECR). Specifically, plasma can be applied to physical vapor deposition (PVD), plasma etching, and plasma-enhanced chemical vapor deposition (PECVD).

[0003] Semiconductor process equipment uses a support device to hold the wafer, enabling it to undergo the required processing steps. In thin-film deposition, a process gas is first introduced into the semiconductor process chamber. Power is applied to ignite the plasma within the chamber, and positively charged ions in the plasma bombard the target material, causing atoms, molecules, or ions on the target to escape and deposit onto the wafer surface placed on the support device. In integrated circuit (IC) and through-silicon via (TSV) manufacturing processes, electrons are deposited onto the wafer surface to create a negative bias, limiting further electron deposition and simultaneously attracting some positive ions to deposit on the wafer surface, thus achieving a dynamic equilibrium. However, because the wafer is charged, if the support device is grounded, it may cause an electric arc on the wafer surface. Therefore, the support device typically needs to be in a suspended, ungrounded state. However, in practical applications, static electricity is generated between the cooling pads of the support device and the process chamber. Because the support device is suspended, this static charge cannot be effectively eliminated and accumulates at the support device. When excessive charge accumulates, the carrier device will generate a discharge phenomenon, which will adversely affect the film deposition effect. Summary of the Invention

[0004] This disclosure aims to address at least one of the technical problems existing in the prior art, and proposes a semiconductor process equipment and its mounting assembly, which can realize real-time control of the levitation and grounding state of the carrier device, so as to effectively avoid the generation of electric arc on the wafer surface and eliminate the charge accumulated at the carrier device, thereby ensuring the stability of the process.

[0005] To achieve the objectives of this disclosure, a mounting base assembly is provided for use in semiconductor process equipment. The mounting base assembly includes: a first conductive portion for electrical contact with a carrier device during use; and a second conductive portion for grounding during use and rotatable relative to the first conductive portion about a rotation axis. When the first conductive portion and the second conductive portion rotate relative to each other to a first relative angle position, the first conductive portion and the second conductive portion are in electrical contact; when the first conductive portion and the second conductive portion rotate relative to each other to a second relative angle position, the first conductive portion and the second conductive portion are offset to provide electrical insulation.

[0006] In some embodiments, the second conductive portion includes at least one conductive element distributed on a circumference about the axis of rotation, and the at least one conductive element is arranged to form at least one notch on the circumference about the axis of rotation; when the first conductive portion rotates relative to the at least one conductive element to a first relative angular position, the first conductive portion is in electrical contact with one of the conductive elements; when the first conductive portion rotates relative to the at least one conductive element to a second relative angular position, the first conductive portion is opposite to the notch.

[0007] In some embodiments, the second conductive portion includes a plurality of conductive elements, and adjacent conductive elements are spaced apart to form the notches, and the plurality of conductive elements and the plurality of notches are alternately distributed on a circumference around the axis of rotation.

[0008] In some embodiments, the mounting bracket assembly further includes at least one insulating member distributed on a circumference about the axis of rotation and disposed in the notch; when the first conductive portion rotates relative to the at least one conductive member to the second relative angular position, the first conductive portion contacts the insulating member.

[0009] In some embodiments, the mounting base assembly further includes a limiting structure disposed between the second conductive portion and the first conductive portion, the limiting structure being used to define the relative position of the second conductive portion and the first conductive portion, so that the two can rotate relative to each other in a circumferential direction around the rotation axis.

[0010] In some embodiments, the limiting structure includes an annular limiting groove disposed on the second conductive portion, the annular limiting groove extending circumferentially along the rotation axis, and the first conductive portion being rotatably engaged with the annular limiting groove along the annular limiting groove.

[0011] In some embodiments, the mounting bracket assembly further includes a first insulating sleeve disposed around the outer periphery of the first conductive portion.

[0012] In some embodiments, the mounting base assembly further includes a drive assembly connected to the first conductive portion or the second conductive portion for driving the first conductive portion or the second conductive portion to rotate about the rotation axis.

[0013] As another technical solution, this disclosure also provides a semiconductor process apparatus, the semiconductor process apparatus comprising: a process chamber; a carrier device for carrying a wafer; and the aforementioned mounting bracket assembly for disposing the carrier device in the process chamber, and the second conductive portion being grounded through the process chamber.

[0014] In some embodiments, the semiconductor process equipment further includes: an insulating fastener for being disposed at the bottom of the process chamber of the semiconductor process equipment during use; and wherein the second conductive portion is sleeved on the insulating fastener and configured to be rotatable relative to the insulating fastener about the rotation axis.

[0015] In some embodiments, the insulating fastener is provided with a feed channel; the conductor process equipment further includes an elastic sealing cylinder, one end of which is sealed to the bearing device, the other end of which is sealed to the insulating fastener, and the interior of the elastic sealing cylinder is in communication with the feed channel; the first conductive part is disposed at the other end of the elastic sealing cylinder.

[0016] This disclosure has the following beneficial effects:

[0017] The mounting bracket assembly disclosed herein is used in semiconductor process equipment. The mounting bracket assembly includes a first conductive portion and a second conductive portion. The first conductive portion is used for electrical contact with a carrier device during use. The second conductive portion is used for grounding during use. The first and second conductive portions are rotatable relative to each other about a rotation axis. When the first and second conductive portions are rotated relative to each other to a first relative angle position, they are in electrical contact. When the first and second conductive portions are rotated relative to each other to a second relative angle position, they are offset to achieve electrical insulation. By setting the first and second conductive portions and allowing them to rotate relative to each other, precise real-time control of the carrier device's levitation and grounding states can be achieved. When it is necessary to eliminate accumulated charge on the carrier device, simply rotating the first and second conductive portions relative to each other to the first relative angle position achieves electrical contact, putting the carrier device into a grounding state. To maintain the levitation state of the carrier device and avoid interference with the thin film deposition effect, simply rotating the first and second conductive portions relative to each other to the second relative angle position achieves electrical insulation. Furthermore, this relatively rotatable design not only simplifies the overall structure of the mounting assembly but also simplifies the grounding circuit of the carrier device, providing a more durable and wear-resistant mounting assembly. In addition, since the movement between the first and second conductive parts is limited to relative rotation, it does not affect the normal vertical movement of the carrier device within the semiconductor process equipment.

[0018] The semiconductor process equipment disclosed herein employs the aforementioned mounting base assembly. By providing a first conductive part and a second conductive part that can rotate relative to each other, precise real-time control of the levitation and grounding states of the carrier device can be achieved. When it is necessary to eliminate accumulated charge on the carrier device, simply rotating the first conductive part and the second conductive part relative to each other to a first relative angle position achieves electrical contact, grounding the carrier device. To maintain the levitation of the carrier device and avoid interference with the thin film deposition effect, simply rotating the first conductive part and the second conductive part relative to each other to a second relative angle position achieves electrical insulation. Furthermore, this rotatable design simplifies not only the overall structure of the mounting base assembly but also the grounding circuit of the carrier device, providing a more durable and wear-resistant mounting base assembly. In addition, since the movement between the first conductive part and the second conductive part is limited to relative rotation, it does not affect the normal vertical movement of the carrier device within the semiconductor process equipment. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of the structure of a semiconductor process equipment provided in an embodiment of the present disclosure;

[0020] Figure 2A top view of the second conductive portion of the mounting bracket assembly provided in an embodiment of this disclosure;

[0021] Figure 3 A top view of the first conductive portion of the mounting bracket assembly provided in an embodiment of this disclosure;

[0022] Figure 4 A cross-sectional schematic diagram of the first conductive portion of the mounting bracket assembly provided in an embodiment of this disclosure;

[0023] Figure 5 A schematic diagram showing the first conductive part and the second conductive part of the mounting bracket assembly provided in the embodiments of this disclosure at a first relative angular position L1;

[0024] Figure 6 A schematic diagram showing the first conductive part and the second conductive part of the mounting bracket assembly provided in an embodiment of this disclosure at a second relative angular position L2;

[0025] Figure 7 A schematic diagram of the driving component provided in an embodiment of this disclosure;

[0026] Figure 8 A top view schematic diagram of the driving component provided in an embodiment of this disclosure;

[0027] Figure 9 This is a schematic diagram of the probe structure provided in an embodiment of the present disclosure;

[0028] Figure 10 This is a schematic diagram of the probe and process chamber combined according to an embodiment of the present disclosure.

[0029] List of reference numerals in the attached diagram:

[0030] 1. Semiconductor process equipment; 10. Mounting assembly; 20. Process chamber; 21. Enclosure; 22. Backplate; 23. Target material; 25. Shielding ring; 26. Liner; 27. Deposition ring; 28. Process space; 29. ​​Isolation space; 30. Support device; 31. Adsorption plate; 32. Cooling plate; 33. Groove; 40. Insulating fastener; 41. Feed channel; 50. Flexible sealing cylinder; 60. Vacuum pump; 61. Light-transmitting window; 70. Second plasma source; 71. RF power supply; 72. RF matching unit; 73. Coil; 80. RF bias power supply; 81. Bias matching unit; 90. Shaft; 91. 92. Mounting plate; 93. Magnetron; 94. First counterweight; 95. Second counterweight; 100. First conductive part; 110. First conductive post; 120. First insulating sleeve; 200. Second conductive part; 210. Conductive component; 220. Notch; 221. Insulating component; 230. Limiting structure; 231. Annular limiting groove; 240. Drive assembly; 241. Drive motor; 243. First tooth; 244. Second tooth; 300. Impedance detection assembly; 310. Probe; 311. Needle tip; 312. Sleeve; 313. Needle bar; L1. First relative angular position; L2. Second relative angular position Detailed Implementation

[0031] To enable those skilled in the art to better understand the technical solutions of this disclosure, the temperature control device and the reaction chamber using it provided in this disclosure will be described in detail below with reference to the accompanying drawings.

[0032] In the description of this disclosure, it should be noted that the terms "top," "bottom," "upper," "lower," "left," "right," "inner," and "outer," etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, or the orientations or positional relationships commonly used when the product is in use. These terms are used only for the convenience of describing this disclosure and for simplifying the description, and do not indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this disclosure. Of course, when a semiconductor device is installed in a circuit, the positional relationships between the components are based on their actual orientation.

[0033] Furthermore, in the description of this disclosure, unless otherwise specified, expressions in the singular form may include the concept of plural.

[0034] Furthermore, the terms “first,” “second,” etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance or order.

[0035] Additionally, it should be noted that, unless otherwise specified, the features in the embodiments of this disclosure can be combined with each other arbitrarily.

[0036] This disclosure provides a mounting bracket assembly 10, applied to a semiconductor process apparatus 1. This semiconductor process apparatus is, for example, a PVD (Physical Vapor Deposition) apparatus. Figure 1 As shown, the semiconductor process equipment 1 mainly includes a process chamber 20 and a support device 30 disposed within the process chamber 20. The process chamber 20 is used to provide a vacuum process environment, is made of insulating material, and its cavity can be vertical.

[0037] In this embodiment, as Figures 1 to 6As shown, the mounting bracket assembly 10 includes a first conductive portion 100 and a second conductive portion 200. In use, the first conductive portion is used for electrical contact with the carrier device 30, and the second conductive portion 200 is used for grounding. The first conductive portion 100 and the second conductive portion 200 are rotatable relative to each other about a rotation axis. In other words, one of the first conductive portion 100 and the second conductive portion 200 can remain fixed relative to the process chamber 20, while the other can rotate relative to the process chamber 20 about a rotation axis. When the first conductive portion 100 and the second conductive portion 200 rotate relative to each other to a first relative angle position L1, the first conductive portion 100 and the second conductive portion 200 are in electrical contact. When the first conductive portion 100 and the second conductive portion 200 rotate relative to each other to a second relative angle position L2, the first conductive portion 100 and the second conductive portion 200 are offset to provide electrical insulation. In some embodiments, the first relative angle position L1 and / or the second relative angle position L2 can be the relative positions of the first conductive portion 100 and the second conductive portion 200 at a relative angle. The following description uses an example where the initial relative angle between the second conductive part 200 and the first conductive part 100 is 0°, and the first conductive part 100 remains stationary while the second conductive part 200 rotates around the rotation axis to a specific angle (e.g., 45°). This example also serves as an example for other embodiments described below and will not be repeated here. For example, the relative positions of the second conductive part 200 and the first conductive part 100 at the initial relative angle are in electrical contact, which is the first relative angle position L1. For example, when the second conductive part 200 rotates at a specific angle, the relative positions of the second conductive part 200 and the first conductive part 100 at that specific angle are offset to achieve electrical insulation, which is the second relative angle position L2. In some embodiments, the first relative angle position L1 and / or the second relative angle position L2 can also be a set of relative positions of the first conductive part 100 and the second conductive part 200 at multiple relative angles. This set of relative positions can be a set of relative positions at a continuous segment of relative angles, or a set of relative positions at multiple specific relative angles and / or multiple segments of relative angles. For example, the second conductive part 200 and the first conductive part 100 can be electrically contacted at relative positions within a continuous range of relative angles (e.g., 0° to 180°), which is a first relative angle position L1. Furthermore, the second conductive part 200 and the first conductive part 100 can be electrically insulated by being offset from each other at relative positions within another continuous range of relative angles (e.g., 180° to 360°), which is a second relative angle position L2. For example, the second conductive part 200 and the first conductive part 100 can be electrically contacted at relative positions within multiple specific angles (e.g., 0°, 90°, 180°, 270°, 360°, etc.), which is a first relative angle position L1. For example, the second conductive part 200 and the first conductive part 100 can be electrically insulated by being offset from each other at multiple specific angles (e.g., 45°, 135°, 225°, 315°, etc.), which is a second relative angle position L2.For example, the second conductive part 200 and the first conductive part 100 may be electrically contacted in relative positions within multiple consecutive specific angular ranges (e.g., 0° to 45°, 90° to 135°, 180° to 225°, 270° to 315°, etc.), which is the first relative angular position L1, and the relative positions of the second conductive part 200 and the first conductive part 100 may be staggered to provide electrical insulation within multiple consecutive specific angular ranges (e.g., 45° to 90°, 135° to 180°, 225° to 270°, 315° to 360°, etc.), which is the second relative angular position L2.

[0038] In this embodiment, as Figures 1 to 6 As shown, by setting a first conductive part 100 and a second conductive part 200 and allowing them to rotate relative to each other, precise real-time control of the levitation state and grounding state of the carrier device 30 can be achieved. When it is necessary to eliminate the accumulated charge on the carrier device 30, simply rotating the first conductive part 100 and the second conductive part 200 relative to each other to a first relative angle position L1 can achieve electrical contact, putting the carrier device 30 into a grounding state. To maintain the levitation state of the carrier device 30 and avoid interfering with the thin film deposition effect, simply rotating the first conductive part 100 and the second conductive part 200 relative to each other to a second relative angle position L2 can achieve electrical insulation. In addition, this relative rotation design not only simplifies the overall structure of the mounting base assembly 10, but also simplifies the grounding circuit of the carrier device 30, providing a more durable, wear-resistant, and more adjustable mounting base assembly. Based on this, the mounting base assembly 10 can provide a simplified and durable grounding circuit while supporting the carrier device 30. Furthermore, since the movement between the first conductive part 100 and the second conductive part 200 is limited to relative rotation, it does not affect the normal vertical movement of the support device 30 in the semiconductor process equipment 1. Based on this, the mounting bracket assembly 10 of this embodiment can release static electricity in a timely manner without affecting the process, allowing the mounting bracket assembly 10 to release static electricity promptly under various process conditions according to process requirements.

[0039] In a radio frequency (RF) environment, the RF energy feed path exhibits inductive characteristics, resulting in a high bias voltage. Existing technologies typically use conventional switches for grounding; however, these switches are highly susceptible to breakdown in RF environments, leading to arcing. In contrast, the mounting bracket assembly 10 of this disclosure has better withstand voltage performance and can be effectively used in semiconductor process equipment operating in RF environments.

[0040] In some embodiments, such as Figures 2 to 6As shown, the second conductive portion 200 may include at least one conductive element 210. The at least one conductive element 210 is distributed on a circumference about the axis of rotation and arranged to form at least one notch 220 on the circumference about the axis of rotation. When the first conductive portion 100 rotates relative to the at least one conductive element 210 to a first relative angular position L1, the first conductive portion 100 is in electrical contact with one of the conductive elements 210. When the first conductive portion 100 rotates relative to the at least one conductive element 210 to a second relative angular position L2, the first conductive portion 100 is opposite to the notch 220. The relative angular range of each conductive element 210 in electrical contact with the first conductive portion 100 can form a continuous relative angular range within the first relative angular position L1, and the relative angular range of each notch 220 opposite to the first conductive portion 100 can form a continuous relative angular range within the second relative angular position L2. Compared to related technologies, the change in relative position between the conductive element 210 and the first conductive portion 100 involves only rotation, making the structure of the mounting base assembly 10 more durable.

[0041] In some embodiments, such as Figures 2 to 6As shown, the second conductive portion 200 may include a plurality of conductive elements 210. A notch 220 is formed between adjacent conductive elements 210. The plurality of conductive elements 210 and the plurality of notches 220 are alternately distributed on a circumference around the axis of rotation. Thus, at the first relative angular position L1, the first conductive portion 100 can simultaneously make electrical contact with the plurality of conductive elements 210 respectively, forming a plurality of parallel grounding paths. This increases the area of ​​electrical contact between the first conductive portion 100 and the second conductive portion 200, thereby making the grounding path more stable and reducing the required current through each grounding path, thus reducing the current withstand requirement of the mounting assembly 10 compared to related technologies. Based on this, when the bearing device is grounded, the mounting assembly 10 of this embodiment can greatly reduce the possibility of arcing at the charge accumulation location. For example, the first conductive portion 100 may have a plurality of first conductive posts 110. At a first relative angle position L1, each first conductive post 110 may be in electrical contact with one of the conductive elements 210, and at a second relative angle position L2, each first conductive post 110 is opposite to the notch 220. During a full rotation of the first conductive portion 100 and the second conductive portion 200, each first conductive post 110 of the first conductive portion 100 may make electrical contact with each conductive element 210 sequentially and individually. It should be noted that at the first relative angle position L1, the first conductive portion 100 may also make electrical contact with only one of the conductive elements 210. In other words, the first conductive portion 100 may have one of the aforementioned first conductive posts 110, and may also have at least one first insulating post (not shown) to replace the other first conductive posts among the plurality of first conductive posts 110, thereby making the contact between the first conductive portion 100 and the second conductive portion 200 more stable.

[0042] In some embodiments, such as Figures 2 to 6 As shown, multiple conductive elements 210 and multiple notches 220 can be evenly and alternately distributed on a circumference around the axis of rotation. In other words, for a relative angle range, each conductive element 210 and each notch 220 covers the same angle range. For example, each conductive element 210 and each notch 220 covers an angle range of 45°, and the number of conductive elements 210 is four, and therefore the number of notches 220 is also four, so that the conductive elements 210 and notches 220 can form a complete relative angle range. For example, the first conductive part 100 can have four of the above-mentioned first conductive posts 110. During the process of the first conductive part 100 and the second conductive part 200 rotating a full circle relative to each other, each first conductive post 110 can rotate 45° each time to be opposite to each conductive element 210 and each notch 220 respectively. Thus, each switch between the first relative angle position L1 and the second relative angle position L2 can be achieved by the same relative angle change, thereby making the switch control more convenient.

[0043] In some embodiments, such as Figures 2 to 6 As shown, the mounting base assembly 10 may further include at least one insulating member 221. The at least one insulating member 221 is distributed around the circumference of the rotation axis and disposed in the notch 220. When the first conductive portion 100 rotates relative to the at least one conductive member 210 to a second relative angular position L2, the first conductive portion 100 contacts the insulating member 221. Thus, the insulating member 221 disposed in the notch 220 can form a complete annular structure together with the conductive member 210. The first conductive portion 100 can remain in contact with this annular structure, thereby allowing the second conductive portion to stably support the first conductive portion 100. In some embodiments, the conductive member 210 and the insulating member 221 can be fixed together by a connecting structure, for example, a threaded engagement structure. In some embodiments, the conductive member 210 can be conductive ceramic, and the insulating member 221 can be insulating ceramic, and the two can be formed integrally by sintering.

[0044] In some embodiments, such as Figures 2 to 6 As shown, the mounting bracket assembly 10 may further include a limiting structure 230. The limiting structure 230 is disposed between the second conductive portion 200 and the first conductive portion 100. The limiting structure 230 is used to limit the relative position between the second conductive portion 200 and the first conductive portion 100, allowing them to rotate relative to each other in a circumferential direction about the axis of rotation. The limiting structure 230 can prevent lateral displacement (in the plane of the circumferential direction) between the first conductive portion 100 and the second conductive portion 200 during use, thereby preventing them from separating.

[0045] In some embodiments, such as Figures 2 to 6 As shown, the limiting structure 230 may include an annular limiting groove 231 disposed in the second conductive portion 200. The annular limiting groove 231 extends circumferentially along the axis of rotation. The first conductive portion 100 is rotatably engaged with the annular limiting groove 231. In embodiments where the first conductive portion 100 includes first conductive posts 110, each first conductive post 110 is rotatable along the annular limiting groove 231.

[0046] In some embodiments, such as Figure 3 and Figure 4 As shown, the mounting bracket assembly 10 may further include a first insulating sleeve 120. The first insulating sleeve 120 is sleeved on the outer periphery of the first conductive portion 100. Thus, the first insulating sleeve 120 can be used to protect the first conductive portion 100, prevent deformation of the first conductive portion, and can be supported on the second conductive portion 200.

[0047] In some embodiments, such as Figure 1 , Figure 7 and Figure 8As shown, the mounting assembly 10 may further include a drive assembly 240. The drive assembly 240 is connected to the first conductive part 100 or the second conductive part 200 and is used to drive the first conductive part 100 or the second conductive part 200 to rotate around a rotation axis. By providing the drive assembly 240, the first conductive part 100 and the second conductive part 200 can be conveniently and in real-time switched between a first relative angular position L1 and a second relative angular position L2, thereby controlling the carrier device 30 to switch between a floating state and a grounded state. This allows the carrier device 30 to be switched to a grounded state to eliminate static electricity when needed (e.g., when a step in the manufacturing process is completed), and to be switched to a floating state when needed (e.g., before the start of the next step) to apply radio frequency bias power to the carrier device 30. Through the drive assembly 240, the mounting assembly 10 of this embodiment can more accurately control the floating and grounded states of the carrier device 30 in real time.

[0048] In some embodiments, such as Figures 1 to 8 As shown, the drive assembly 240 may include a drive motor 241 and a transmission mechanism. The transmission mechanism is used to transmit the power of the drive motor 241 to the first conductive part 100 or the second conductive part 200 to drive them to rotate.

[0049] In some embodiments, such as Figures 1 to 8 As shown, the transmission mechanism may include a first tooth 243 connected to the drive motor 241 and a second tooth 244 disposed on the first conductive portion 100 or the second conductive portion 200. The second tooth 244 extends circumferentially around the axis of rotation. The first tooth 243 meshes with the second tooth 244. At least one of the first tooth 243 and the second tooth 244 is insulated. In some embodiments, the transmission mechanism may further include a transmission chain (not shown) for meshing with the first tooth 243 and the second tooth 244 respectively, thereby allowing the drive motor 241 to be placed in the process chamber 20 away from the first conductive portion 100 or the second conductive portion 200.

[0050] In some embodiments, the transmission mechanism may include an insulated transmission belt (not shown).

[0051] In some embodiments, the drive motor 241 may be a stepper motor. Each step of the stepper motor can drive the first conductive part 100 or the second conductive part 200 to complete a position change, for example, from the first relative angle position L1 to the second relative angle position L2, and vice versa.

[0052] An exemplary operation of the mounting bracket assembly 10 in this embodiment is as follows: In the initial state, the first conductive part 100 and the second conductive part 200 are at a second relative angle position L2, wherein each first conductive post 110 is aligned with the middle position of the opposite insulating member 221, and at this time the ground impedance value of the bearing device 30 is infinite; the second conductive part 200 is rotated to the first relative angle position L1 (e.g., rotated 45°) by the driving component 240, wherein each first conductive post 110 is aligned with the middle position of the electrically contacting conductive member 210, and at this time the bearing device is grounded and the ground impedance value is less than 1Ω.

[0053] As another technical solution, such as Figure 1 As shown, this disclosure also provides a semiconductor process apparatus 1. The semiconductor process apparatus 1 includes a process chamber 20, a carrier device 30, and the aforementioned mounting assembly 10. The carrier device 30 is used to carry a wafer. The mounting assembly 10 is used to place the carrier device 30 in the process chamber 20, and the second conductive portion 200 is grounded through the process chamber 20.

[0054] In this embodiment, as Figures 1 to 6 As shown, the semiconductor process equipment 1, by providing a mounting base assembly 10 including a first conductive part 100 and a second conductive part 200, and allowing the first conductive part 100 and the second conductive part 200 to rotate relative to each other, can achieve precise real-time control of the levitation state and grounding state of the carrier device 30. When it is necessary to eliminate the accumulated charge on the carrier device 30, simply rotating the first conductive part 100 and the second conductive part 200 relative to each other to a first relative angle position L1 can achieve electrical contact, putting the carrier device 30 into a grounding state. To maintain the levitation state of the carrier device 30 and avoid interference with the thin film deposition effect, simply rotating the first conductive part 100 and the second conductive part 200 relative to each other to a second relative angle position L2 can achieve electrical insulation. In addition, this relative rotation design not only simplifies the overall structure of the mounting base assembly 10, but also simplifies the grounding circuit of the carrier device 30, providing a more durable and wear-resistant mounting base assembly. Furthermore, since the movement between the first conductive part 100 and the second conductive part 200 is limited to relative rotation, it will not affect the normal vertical movement of the support device 30 in the semiconductor process equipment 1.

[0055] In some embodiments, such as Figure 1 and Figure 10As shown, the carrier device 30 includes an adsorption plate 31 and a cooling plate 32 disposed below the adsorption plate 31. The adsorption plate 31 is used to support the wafer to be processed, and the cooling plate 32 is used to support the adsorption plate 31. The cooling plate 32 has a supporting function and a cooling function. The process chamber 20 also includes a lifting shaft and a lifting device (not shown). The top end of the lifting shaft is connected to the cooling plate 32, and the bottom end extends to the outside of the process chamber 20 to be connected to the lifting device for transmission. The lifting device is used to drive the lifting shaft to move up and down, so as to drive the carrier device 30 to move back and forth in the vertical direction, so that the cooling plate 32 switches between a low position and a high position. The low position is below the high position, and the high position is the process position. When in the process position, the wafer can be processed. In this embodiment, there is no specific limitation on the material of the process chamber 20 and the adsorption plate 31. The material of the process chamber 20 can be, for example, stainless steel, and the material of the adsorption plate 31 can be, for example, graphite, quartz, or ceramic (e.g., aluminum nitride AlN). Among them, ceramic has good dielectric properties to help prevent the adsorption plate 31 from reacting with the plasma.

[0056] In some embodiments, such as Figure 1 As shown, the bottom wall of the process chamber 20 is also provided with an exhaust port, which is connected to a vacuum pump 60 located outside the process chamber 20. The vacuum pump 60 can drive the gas inside the process chamber 20 to be discharged from the exhaust port to the outside of the process chamber 20, thereby evacuating the process chamber 20 and providing a vacuum environment for wafer processing. The vacuum pump 60 can be implemented as a dry pump, cold pump, molecular pump, cryogenic pump, etc. The process chamber 20 is also provided with a lower air inlet located below the support device 30, which can introduce process gas. The mounting assembly 10 of this embodiment can be applied to a vacuum environment, and because the entire mounting assembly 10 can be completely disposed in the process chamber 20, for example, the mounting assembly 10 can be disposed on the bottom of the process chamber 20. In other words, the mounting assembly 10 of this embodiment can realize the switching between the floating state and the grounded state of the support device 30 through the structure disposed in the process chamber 20, without relying on the mechanical structure at least partially disposed outside the process chamber 20. Based on this, the mounting bracket assembly 10 of the present disclosure can achieve the above-described switching process without affecting the vacuum level in the process chamber 20.

[0057] In some embodiments, such as Figure 1 As shown, the top of the process chamber 20 has an opening. The semiconductor process apparatus 1 also includes a cover 21 and a backplate 22, which are disposed above the process chamber 20. The cover 21 surrounds the outer periphery of the backplate 22, and the cover 21 and the backplate 22 together cover the opening at the top of the process chamber 20 to seal the opening. Alternatively, in other embodiments, the cover 21 may also cover the backplate 22, and the backplate 22 seals the opening.

[0058] In some embodiments, such as Figure 1 As shown, the semiconductor process equipment 1 also includes a target 23 and a first plasma source (not shown). The target 23 is disposed on the side of the back plate 22 facing the process chamber 20, and the target 23 is directly opposite the cooling plate 32. The first plasma source is used to apply power to ionize the process gas in the process chamber 20 into plasma. Positively charged ions in the plasma bombard the target 23, causing atoms, droplets, or ions on the target 23 to escape and deposit onto the wafer. The material of the target 23 can be designed according to the process to be performed in the process chamber 20. Optionally, the aforementioned cover 21 and the aforementioned back plate 22 together define a sealed cavity, which can be filled with a cooling medium such as deionized water to cool the target 23.

[0059] The first plasma source can be a direct current discharge type. That is, the first plasma source includes a direct current power supply (DC power). The negative terminal of the DC power supply is electrically connected to the target 23, and the positive terminal is connected to the cavity wall of the process chamber 20 and grounded, so that the target 23 is supplied with a negative voltage. An electric field is generated within the process chamber 20. Under the influence of the electric field, electrons in the process space gain sufficient energy and move. Electrons collide with process gas atoms to ignite, causing the process gas to ionize into plasma. While positively charged ions in the plasma bombard the target 23, electrons in the plasma can also continuously collide with process gas atoms to ignite, ionizing more positively charged ions to bombard the target 23. Here, the electrical connection between the negative terminal of the DC power supply and the target 23 should be interpreted broadly. For example, it can be understood as the negative terminal of the DC power supply being directly connected to the target 23, or as the negative terminal of the DC power supply being connected to the backplate 22 made of a conductive material, or as the negative terminal of the DC power supply being connected to the cover 21 made of a conductive material, and the backplate 22 is also made of a conductive material.

[0060] In some embodiments, such as Figure 1 As shown, the semiconductor process equipment 1 also includes a second plasma source 70. The second plasma source 70 specifically includes a radio frequency power supply 71, a radio frequency matching device 72, and a coil 73. The coil 73 is wound around the outside of the process chamber 20. The radio frequency power supply 71 is connected to the coil 73 through the radio frequency matching device 72. The coil 73 is loaded with radio frequency power to generate a high-frequency electromagnetic field. Under the action of the high-frequency electromagnetic field, electrons obtain sufficient energy and move. The electrons collide with the atoms of the process gas to ignite, causing the process gas to ionize into plasma or maintain the plasma ignition.

[0061] In some embodiments, please refer to Figure 1As shown, the process chamber 20 also includes a shielding ring 25 and a shield 26, which are disposed around the outer periphery of the support device, with the top of the shield 26 surrounding the target material 23. The process chamber 20 also includes a deposition ring 27, which is disposed at the edge of the adsorption disk 31, with the center line of the deposition ring 27 coinciding with the central axis of the adsorption disk 31.

[0062] In some embodiments, when the cooling tray 32 is in a low position, the outer edge of the shielding ring 25 rests on the inner liner 26, and in the vertical direction, the inner edge of the shielding ring 25 is opposite to the deposition ring 27 with a gap between them. When the cooling tray 32 rises to the process position, such as Figure 1 As shown, the inner edge of the shielding ring 25 contacts the edge of the top surface of the deposition ring 27. The deposition ring 27 lifts the shielding ring 25, causing the shielding ring 25 to separate from the liner 26. A labyrinthine channel is formed between the bottom end of the liner 26 and the outer edge of the shielding ring 25. At this time, the liner 26, the shielding ring 25, the deposition ring 27, and the adsorption disk 31 together divide the interior of the process chamber 20 into a process space 28 and an isolation space 29 arranged sequentially in the vertical direction. The isolation space 29 is close to the bottom of the process chamber 20, and the cooling disk 32 is correspondingly located in the isolation space 29. Under the action of the high-frequency electromagnetic field, the electrons in the process space 28 obtain sufficient energy and move. The electrons collide with the atoms of the process gas to ignite, causing the process gas to ionize into plasma or maintain the plasma ignition.

[0063] With this configuration, when the cooling plate 32 is in the process position for process processing, on the one hand, the plasma is confined within the process space 28, and on the other hand, when the plasma is ignited within the process space 28, a glow discharge phenomenon will occur, which will generate a large amount of glow. The liner 26 can protect the upper part of the cavity wall of the process chamber 20 from being damaged by the glow.

[0064] In some embodiments, the adsorption disk 31 is further provided with electrodes. For example... Figure 1As shown, the semiconductor process equipment 1 also includes an RF bias power supply 80 and a DC power supply (not shown). The RF bias power supply 80 is electrically connected to the electrodes via a bias matching unit 81, and the DC power supply is also electrically connected to the electrodes. Thus, by controlling the DC power supply to fix the wafer on the adsorption disk 31, and by feeding a negative bias voltage to the electrodes through the RF bias power supply 80, positive ions on the target material 23 are attracted by the negative bias voltage and deposited onto the wafer surface, thereby improving process quality. Taking the application of a PVD chamber to through-silicon via (TSV) technology as an example, since the aspect ratio of TSVs is typically large (the ratio of the depth to the diameter of the TSV is, for example, greater than 5:1), this embodiment applies a negative bias voltage to the electrodes of the adsorption disk 31 to attract positive ions on the target material 23 to vertically enter the TSV, thereby improving film coverage. An RF filter (not shown) may also be provided between the DC power supply and the electrodes. A DC blocking capacitor (not shown) may also be provided between the bias matching unit 81 and the electrodes.

[0065] In some embodiments, such as Figures 1 to 6 As shown, the semiconductor process equipment 1 may further include an insulating fastener 40. The insulating fastener 40 is used to be disposed at the bottom of the process chamber 20 of the semiconductor process equipment 1 during use. The second conductive part 200 is sleeved on the insulating fastener 40 and is configured to be rotatable relative to the insulating fastener 40 about a rotation axis. By providing the insulating fastener 40, the second conductive part 200 can be stably and rotatably disposed at the bottom of the process chamber 20.

[0066] In some embodiments, such as Figures 1 to 6As shown, a feed channel 41 may be provided in the insulating fixing member 40. A through hole is provided on the bottom of the process chamber 20, and the feed channel 41 communicates with the through hole. To ensure the sealing of the process chamber 20, the semiconductor process equipment 1 also includes an elastic sealing cylinder 50 (e.g., a bellows). One end of the elastic sealing cylinder 50 is sealed to the carrier device 30, and the other end of the elastic sealing cylinder 50 is sealed to the insulating fixing member 40, and the interior of the elastic sealing cylinder 50 communicates with the feed channel 41. A first conductive part 100 is provided at the other end of the elastic sealing cylinder 50, so that the carrier device 30 can make electrical contact with the second conductive part 200 through the elastic sealing cylinder 50 and the first conductive part 100 to release charge. In the above embodiment with a cooling plate 32, the elastic sealing cylinder 50 is sleeved around the lifting shaft, the top end of the elastic sealing cylinder 50 is sealed to the cooling plate 32, and the bottom end is sealed to the top of the insulating fixing member 40, so as to seal the feed channel 41 and the through hole. By providing the feed channel 41 and the elastic sealing cylinder 50, the mounting base assembly 10 of this embodiment can further reduce or eliminate the vertical positional deviation caused by the relative rotation between the first conductive part 100 and the second conductive part 200, thereby significantly improving the vertical stability of the support device 30. Simultaneously, the elastic sealing cylinder 50, as part of the grounding circuit, can communicate internally with the feed channel 41 to accommodate other components electrically connected to the support device 30. For example, the RF bias power supply 80 described above can be electrically connected to the electrodes of the adsorption plate 31 via the bias matching converter 81 and through the feed channel 41 and the interior of the elastic sealing cylinder 50.

[0067] In some embodiments, the insulating fastener 40 can be sealed to the elastic sealing cylinder 50 and the bottom of the process chamber respectively by a sealing element to ensure the sealing of the feed channel, thereby maintaining the vacuum level of the process chamber 20.

[0068] In some embodiments, such as Figure 1 As shown, the second conductive portion 200 can make electrical contact with the bottom of the process chamber 20 to achieve grounding. In some embodiments, the second conductive portion 200 may be provided with a rolling structure (not shown) for connecting to the bottom of the process chamber 20 to reduce wear. The rolling structure may be, for example, a ball bearing structure. In some embodiments, the second conductive portion 200 may also slidably contact the bottom of the process chamber 20.

[0069] In some embodiments, such as Figure 1 and Figure 4As shown, the elastic sealing cylinder 50 is electrically connected to the first conductive part 100. Thus, when the first conductive part 100 and the second conductive part 200 are at a first relative angular position L1, the supporting device 30 can be grounded through the elastic sealing cylinder 50. Specifically, the supporting device 30 can be electrically connected to the first conductive part 100 through the elastic sealing cylinder 50, and further grounded to the bottom of the process chamber 20 through the second conductive part 200. Thus, when the electrode is loaded with radio frequency bias power, if the adsorption plate 31 is made of ceramic, the radio frequency signal can be coupled to the cooling plate 32 through the ceramic adsorption plate 31. The cooling plate 32 is grounded through the elastic sealing cylinder 50. In some embodiments, the first conductive part 100 and the elastic sealing cylinder 50 are connected by threads.

[0070] In some embodiments, such as Figure 1 As shown, the semiconductor process equipment 1 may further include a motor, a rotating shaft 90, a mounting plate 91, and a magnetron 92 located above the target 23. The rotating shaft 90 extends vertically, and the motor is driven to the rotating shaft 90. The bottom end of the rotating shaft 90 is connected to the mounting plate 91, and the magnetron 92 is located below the mounting plate 91 and connected to the mounting plate 91. During the process, the motor drives the rotating shaft 90 to rotate around its central axis, thereby driving the magnetron 92 to rotate, so that the magnetic field generated by the magnetron 92 can scan the entire surface of the target 23 facing the cooling plate 32. In this example, the motor can also stop running when the semiconductor process equipment 1 is shut down. A first counterweight 93 and a second counterweight 94 may also be installed on the mounting plate 91 to balance the force on the mounting plate 91 and prevent the magnetron 92 from tilting.

[0071] In some embodiments, such as Figure 1 and Figure 9 As shown, the semiconductor process equipment 1 may also include a controller (not shown) and an impedance detection component 300. In the grounded state, the voltage of the cooling disk 32 is 0V, meaning the cooling disk 32 is not energized. The impedance detection component 300 can detect the impedance of the carrier device 30 (e.g., the cooling disk 32) of the semiconductor process equipment 1 in real time to ensure that the first conductive part 100 or the second conductive part 200 has been rotated to the first relative angular position L1 or the second relative angular position L2 as needed.

[0072] For example, the controller includes at least one processor and at least one memory. The memory can be used to store program code. The memory can be configured as any type of memory. For example, the memory can be implemented as flash memory, read-only memory (ROM), random access memory (RAM), removable memory, other types of storage elements, or any combination of such storage devices.

[0073] The processor can be used to execute application code and call relevant modules to implement the functions of the semiconductor process equipment in the embodiments of this application. The processor may include one or more processing units, such as: an application processor (AP), a modem processor, a graphics processing unit (GPU), an image signal processor (ISP), a video codec, a digital signal processor (DSP), a baseband processor, and / or a neural network processing unit (NPU), etc. Different processing units may be independent devices or integrated into one or more processors.

[0074] like Figure 1 , Figure 9 and Figure 10 As shown, the impedance detection component 300 is communicatively connected to the controller. The impedance detection component 300 has a detection section that can contact the carrier device 30 (e.g., cooling plate 32) to detect the ground impedance value of the carrier device 30 and send the detected ground impedance value to the controller. When the carrier device 30 is in a grounded state, the controller checks whether the ground impedance value of the cooling plate 32 is infinite when the first conductive part 100 and the second conductive part 200 are at a second relative angle position L2, and checks whether the ground impedance value of the cooling plate 32 is less than a predetermined value when the first conductive part 100 and the second conductive part 200 are at a first relative angle position L1. For example, the preset value can be 1Ω or 1.5Ω. When a mismatch is detected between the ground impedance value and the relative angle position of the first conductive part 100 and the second conductive part 200, the controller controls the semiconductor process equipment 1 to stop.

[0075] The shutdown of semiconductor process equipment 1 can be understood as the cessation of operation of components such as the first plasma source, the second plasma source 70, and the lifting device. The mismatch between the ground impedance value and its corresponding position can be understood as follows: when the supporting device 30 is in a suspended state (i.e., the first conductive part 100 and the second conductive part 200 are at the second relative angle position L2), the ground impedance value of the supporting device 30 is not infinite; and when the supporting device 30 is in a grounded state (i.e., the first conductive part 100 and the second conductive part 200 are at the first relative angle position L1), the ground impedance value of the supporting device 30 is greater than a preset value.

[0076] Based on the above, in this embodiment, the semiconductor process equipment 1 detects the ground impedance value of the cooling plate 32 during the process. When the semiconductor process equipment 1 detects a mismatch between the ground impedance value and the relative angular position of the first conductive part 100 and the second conductive part 200, it can stop the process in a timely manner. In other words, the process stops when there is a risk of glowing in the isolation space 29. This prevents glowing in the isolation space 29, avoiding damage to the lower cavity wall of the isolation space 29, minimizing particles within the isolation space 29, ensuring the cleanliness of the isolation space 29, and thus ensuring process quality and product yield. It is easy to understand that, taking the process chamber 20 as an example (made of stainless steel), particles generated when the inner surface of the process chamber 20 is severely damaged due to glowing contain iron atoms.

[0077] In some embodiments, such as Figure 1 and Figure 9 As shown, the impedance detection component 300 mentioned in this application can be specifically implemented as a resistance sensor or a probe 310.

[0078] This embodiment does not specifically limit the contact position between the detection part of the impedance detection component 300 and the supporting device 30. In some embodiments, such as Figure 1 As shown, the impedance detection component 300 can be disposed on the side wall of the process chamber 20 to contact the side wall of the cooling plate 32. In another embodiment not shown, the impedance detection component 300 can be disposed on the bottom wall of the process chamber 20 to contact the bottom of the cooling plate 32.

[0079] In some embodiments, during the switching between low and high positions of the cooling plate 32, the detection part of the impedance detection component 300 remains in contact with the cooling plate 32. Figure 9 This is a schematic diagram of the structure of a probe 310 in a semiconductor process apparatus 1 provided in an embodiment of this application. Taking an impedance detection component 300 as an example, as... Figure 1 As shown, when the probe 310 is disposed on the side wall of the process chamber 20, the probe 310 can extend radially along the process chamber 20, and the tip 311 of the probe 310 abuts against the side wall of the cooling plate 32. Specifically, the probe 310 may include a sleeve 312 and a needle rod 313, one end of the needle rod 313 is inserted into the sleeve 312, and the other end of the needle rod 313 is the needle tip 311.

[0080] In other embodiments not shown in the figure, when the probe 310 is disposed on the bottom wall of the process chamber, the probe 310 can extend vertically. The probe 310 is configured as a telescopic probe 310, and the tip 311 elastically contacts the bottom wall of the cooling plate 32 to ensure that the tip 311 remains in contact with the cooling plate 32 during the switching between low and high positions. In this example, the probe 310 may also include a spring disposed inside the sleeve 312, one end of the spring being connected to the inner wall of the sleeve 312, and the other end of the spring being connected to one end of the needle rod 313. When the cooling plate 32 is in the low position, the spring is in a compressed state; during the process of the cooling plate 32 rising to switch from the low position to the high position, the spring gradually recovers its elastic deformation to push the needle rod 313 upward.

[0081] In some embodiments, the impedance detection assembly 300 further includes a driver, which is drively connected to the detection section of the impedance detection assembly 300. The driver can drive the detection section of the impedance detection assembly 300 to reciprocate, causing the detection section to extend and retract between a first position and a second position. This allows the detection section to contact or separate from the cooling plate 32 located at the higher position. Taking the impedance detection assembly 300 as an example with a probe 310, the driver can be specifically disposed within the sleeve 312 to drive the probe 310 to reciprocate along its extension direction.

[0082] An exemplary operation of the semiconductor process equipment 1 in this embodiment is as follows: In the initial state, the cooling disk 32 may be located in a low position, and the detection unit is located in a first position, with the detection unit separated from the cooling disk 32; the cooling disk 32 moves up to a high position, and the driver drives the detection unit to move, switching the detection unit from the first position to a second position to contact the cooling disk 32, thereby detecting the ground impedance value of the cooling disk 32 located at the process position, and thus confirming whether the cooling disk 32 (furthermore, the carrier device 30) is grounded. If it is confirmed that the carrier device 30 is grounded (i.e., the first conductive part 100 and the second conductive part 200 are in a first relative angle position L1), the controller determines that it is prohibited to apply RF bias power to the carrier device 30; the drive component 240 drives the first conductive part 100 or the second conductive part 200. The device rotates to the second relative angle position L2. During the rotation, the detection unit remains in the second position to contact the cooling plate 32 and continuously detect the ground impedance value of the cooling plate 32. When the detection unit detects that the carrier device 30 is in a suspended state, the controller determines that it is allowed to apply radio frequency bias power to the carrier device 30. The plasma process is implemented. After the process is completed, the drive component 240 drives the first conductive part 100 or the second conductive part 200 to rotate to the first relative angle position L1 to guide the residual charge on the surface of the carrier device 30 to the ground. When the detection unit detects that the ground impedance value of the cooling plate 32 is less than a preset value (e.g., 1Ω), the driver drives the detection unit to retract from the second position to the first position. The detection unit no longer contacts the cooling plate 32, and the cooling plate 32 descends from the process position to the low position.

[0083] Comparing the above optional methods, it can be seen that in the embodiment where the impedance detection component 300 is further provided with a driver and the detection part contacts or separates from the cooling plate 32 located at the high position, the detection part only abuts against the cooling plate 32 when the cooling plate 32 is located at the high position. This helps to avoid the detection part from contacting the cooling plate 32 and causing friction during the lifting and lowering of the cooling plate 32, and helps to prevent the detection part from wearing out and causing poor contact, so as to ensure the detection accuracy of the impedance detection component 300.

[0084] The impedance detection component 300 only contacts the cooling pad 32 when it is in the process position. This prevents operator error when the cooling pad 32 is in a low position, such as directly applying RF bias power before the support device has been raised to the process position. Specifically, when the cooling pad 32 is in the process position, RF bias power can only be applied if its impedance to ground is infinite. In other words, in this embodiment, when the cooling pad 32 has not reached the process position, the impedance detection component 300 is disconnected from the cooling pad 32, and its impedance to ground value is not displayed, thus not meeting the condition for applying RF bias power.

[0085] Figure 10 This is a schematic diagram of the structure of a cooling plate 32 in a semiconductor process apparatus 1 provided in an embodiment of this application. When the impedance detection component 300 is further provided with a driver, and the detection unit can move under the drive of the driver, the cooling plate 32 can also be provided with a groove 33. When the cooling plate 32 is in a high position, the needle tip 311 can extend into the groove 33. This helps to ensure that the needle tip 311 can reliably contact the cooling plate 32.

[0086] exist Figure 10 In the specific example shown, the groove 33 is conical, with an open end and an end end, and the cross-sectional area of ​​the groove 33 gradually decreases from the open end to the end end. In this example, the conical groove 33 is adapted to the needle tip 311, and the effective contact area between the needle tip 311 and the cooling plate 32 is large, further ensuring that the needle tip 311 can reliably contact the cooling plate 32 to achieve the detection of the impedance value to ground. Of course, in other alternative embodiments, the cross-sectional area of ​​the groove 33 may be equal everywhere from the open end to the end end.

[0087] In some embodiments, such as Figure 1As shown, the process chamber 20 has an opening in its wall and a light-transmitting window 61 on its wall, which seals the opening. During the process, if an abnormality occurs in the semiconductor process equipment 1, causing the cooling pad 32 to be in the process position, the glow light in the process space 28 leaks into the isolation space 29, and the operator can observe the glow light in the isolation space 29 through the light-transmitting window 61. In some embodiments, the semiconductor process equipment 1 also includes a photosensitive element (not shown) communicatively connected to a controller. The photosensitive element is used to detect the light signal intensity below the cooling pad 32 (i.e., within the isolation space 29) during the process and send the detected light signal intensity to the controller. The controller is used to control the semiconductor process equipment 1 to stop when the light signal intensity exceeds a set value.

[0088] Based on any of the above embodiments, the semiconductor process equipment 1 may further include an alarm device that is communicatively connected to the controller, the alarm device being configured to issue an alarm signal when the semiconductor process equipment 1 is shut down.

[0089] As described above, when the relative angular position of the bearing device 30 to ground does not match that of the first conductive part 100 and the second conductive part 200, the semiconductor process equipment 1 stops and the alarm device issues an alarm signal. In embodiments where the semiconductor process equipment 1 also includes a photosensitive element, when the light signal intensity exceeds a set value, the semiconductor process equipment 1 stops and the alarm device also issues an alarm signal.

[0090] By employing an alarm device to issue alarm signals, staff can promptly become aware of any abnormalities in the semiconductor process equipment 1 and take timely countermeasures to prevent the malfunctioning equipment 1 from continuing its process and causing serious consequences. As disclosed in this document, the alarm device for the semiconductor process equipment 1 can be implemented using one or more of a buzzer, indicator light, or display screen.

[0091] It is understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of this disclosure, and this disclosure is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and substance of this disclosure, and these modifications and improvements are also considered to be within the scope of protection of this disclosure.

Claims

1. A mounting bracket assembly for use in semiconductor process equipment, characterized in that, The mounting bracket assembly includes: The first conductive part is used for electrical contact with the carrier device during use; and The second conductive part is used for grounding during use and can rotate relative to the first conductive part about a rotation axis; wherein, When the first conductive part and the second conductive part rotate relative to each other to a first relative angular position, the first conductive part and the second conductive part make electrical contact. When the first conductive part and the second conductive part rotate relative to each other to a second relative angular position, the first conductive part and the second conductive part are offset to achieve electrical insulation.

2. The mounting bracket assembly according to claim 1, characterized in that, The second conductive portion includes at least one conductive element, the at least one conductive element being distributed on a circumference around the axis of rotation, and the at least one conductive element being arranged to form at least one notch on the circumference around the axis of rotation; When the first conductive part rotates relative to at least one of the conductive elements to the first relative angular position, the first conductive part makes electrical contact with one of the conductive elements. When the first conductive part rotates relative to at least one of the conductive elements to the second relative angle position, the first conductive part is opposite to the notch.

3. The mounting bracket assembly according to claim 2, characterized in that, The second conductive portion includes a plurality of conductive elements, and adjacent conductive elements are spaced apart to form the notches. The plurality of conductive elements and the plurality of notches are alternately distributed on a circumference around the axis of rotation.

4. The mounting bracket assembly according to claim 2 or 3, characterized in that, The mounting bracket assembly further includes at least one insulating element, which is distributed on a circumference around the axis of rotation and disposed in the notch; When the first conductive part rotates relative to at least one of the conductive elements to the second relative angular position, the first conductive part comes into contact with the insulating element.

5. The mounting bracket assembly according to claim 1, characterized in that, Also includes: A limiting structure is disposed between the second conductive part and the first conductive part. The limiting structure is used to limit the relative position of the second conductive part and the first conductive part, so that the two rotate relative to each other in a circumferential direction around the rotation axis.

6. The mounting bracket assembly according to claim 5, characterized in that, The limiting structure includes an annular limiting groove disposed on the second conductive part. The annular limiting groove extends circumferentially along the axis of rotation, and the first conductive part is rotatably engaged with the annular limiting groove.

7. The mounting bracket assembly according to claim 1, characterized in that, The mounting bracket assembly further includes a first insulating sleeve, which is sleeved on the outer periphery of the first conductive portion.

8. The mounting bracket assembly according to claim 1, characterized in that, The mounting base assembly further includes a drive assembly connected to the first conductive part or the second conductive part, for driving the first conductive part or the second conductive part to rotate around the rotation axis.

9. A semiconductor process apparatus, characterized in that, The semiconductor process equipment includes: Process chambers; A carrier device for supporting wafers; and The mounting bracket assembly according to any one of claims 1 to 8 is used to place the carrier device in the process chamber, and the second conductive part is grounded through the process chamber.

10. The semiconductor process equipment according to claim 9, characterized in that, Also includes: An insulating fastener is used to be installed at the bottom of the process chamber of the semiconductor process equipment during use; and The second conductive part is sleeved on the insulating fastener and is configured to rotate relative to the insulating fastener around the rotation axis.

11. The semiconductor process equipment according to claim 10, characterized in that, The insulating fastener is provided with a feed channel; The conductor processing equipment also includes an elastic sealing cylinder, one end of which is sealed to the bearing device, and the other end of which is sealed to the insulating fixing component. The interior of the elastic sealing cylinder is in communication with the feed channel. The first conductive part is disposed at the other end of the elastic sealing cylinder.

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