Support body state detection mechanism and etching apparatus

Abstract

The application provides a support body state detection mechanism and etching equipment, and relates to the technical field of semiconductor equipment. The support body state detection mechanism comprises a support body, the support body comprises an outer tube and a guide shaft movably arranged in the outer tube, the bottom end of the guide shaft extends out of the bottom end of the outer tube; a positioning piece, the positioning piece is connected to the bottom end of the guide shaft and located outside the outer tube; and a position sensor, the position sensor is fixed relative to the outer tube, and the detection surface of the position sensor faces the positioning piece. The support body state detection mechanism can monitor the position state of the support body in real time.

Description

Technical Field

[0001] This application relates to the field of semiconductor equipment technology, and in particular to a support state detection mechanism and etching equipment. Background Technology

[0002] In capacitively coupled plasma (CCP) etching equipment, advanced gap tuning (AGT) technology is widely used. By dynamically adjusting the gap between the upper and lower electrodes, it is possible to achieve precise control over the plasma concentration distribution and ion bombardment energy, thereby effectively improving etching uniformity and process yield.

[0003] In CCP etching equipment, a retractable support column is located below the lower electrode to support the liner structure. When the electrode spacing changes due to AGT adjustment, the support column extends or retracts accordingly to ensure the relative position of the liner structure and the electrode is matched. However, due to long-term operation, the support column may become stuck due to aging, wear, and other factors, preventing it from rebounding normally or fully extending, thus creating an abnormal gap between the liner and the lower electrode. Such abnormal gaps may cause process anomalies such as plasma leakage and pressure control misalignment, and in severe cases, even wafer damage or equipment failure, threatening process stability and safety.

[0004] Currently, monitoring the position and status of support columns mainly relies on periodic manual inspections or inference from indirect parameters (such as pressure feedback signals). However, manual inspections require downtime, making real-time monitoring impossible and impacting the efficiency of continuous equipment operation. Inference from indirect parameters struggles to accurately identify specific support column positional anomalies and fails to provide timely warnings. Therefore, existing monitoring methods are insufficient to meet the demands of high equipment reliability and automated operation and maintenance. There is an urgent need for a technical solution capable of real-time and accurate monitoring of support column position and status to improve the operational safety and maintenance efficiency of CCP etching equipment. Summary of the Invention

[0005] This application provides a support status detection mechanism and etching equipment. The support status detection mechanism can monitor the position status of the support in real time.

[0006] On one hand, this application provides a support body state detection mechanism, including: a support body, the support body including an outer tube and a guide shaft movably disposed inside the outer tube, the bottom end of the guide shaft extending outside the bottom end of the outer tube; a positioning member, the positioning member being connected to the bottom end of the guide shaft and located outside the outer tube; and a position sensor, the position sensor being fixed relative to the outer tube, and the detection surface of the position sensor facing the positioning member.

[0007] The support status detection mechanism and etching equipment provided in this application embodiment achieve real-time and direct monitoring of the position status of the support guide shaft by setting up positioning components and position sensors. Specifically, the positioning components move synchronously with the guide shaft of the support, and the position sensors collect the position signals of the positioning components in real time, thereby transforming the previous lagging method that relied on manual shutdown and indirect parameter inference into non-contact online monitoring. This not only promptly detects abnormalities such as support jamming, but also accurately locates specific abnormal supports, providing accurate basis for equipment maintenance. Once an abnormal support is detected, the equipment can be immediately paused and repaired in a timely manner, effectively avoiding problems such as plasma leakage and pressure control abnormalities caused by the gap between the liner and the lower electrode. Thus, efficient automated operation and maintenance can be achieved, ensuring wafer safety and improving the operational reliability and process stability of the etching equipment.

[0008] In one possible implementation, the positioning element is a reflective element, and the position sensor is an optical sensor.

[0009] In this way, the light emitted by the optical sensor shines directly on the reflector, and the reflector reflects the received light back to the optical sensor. The optical sensor can accurately measure the position of the reflector by receiving the reflected light.

[0010] In one possible implementation, the support status detection mechanism further includes a sensor bracket, which is fixed relative to the outer tube, and the position sensor is mounted on the sensor bracket.

[0011] In one possible implementation, one end of the positioning element is connected to the bottom end of the guide shaft, and the other end of the positioning element extends to the side of the outer tube.

[0012] In this way, the position sensor can be set on the side of the outer tube in correspondence with the positioning component. The position sensor is located in the space occupied by the outer tube in the height direction of the etching equipment, and the overall space occupied by the support status detection mechanism is small.

[0013] In one possible implementation, the guide shaft includes a main shaft and a fixing member, the fixing member being connected to the main shaft; the support body also includes an elastic member disposed within the outer tube, the elastic member being disposed between the fixing member and the bottom end of the outer tube.

[0014] Thus, as the guide shaft moves from the top end to the bottom end of the outer tube, the fixing element compresses the spring elastic element. The elastic force of the compressed elastic element can drive the guide shaft back to its initial position.

[0015] In one possible implementation, the support body further includes a bellows disposed inside the outer tube, the bellows being positioned between the top end of the outer tube and the fixing member.

[0016] In this way, the bellows can buffer and balance the elastic force of the elastic element, improve the smoothness of the guide shaft during movement, and also improve the stability of the guide shaft when it is stationary.

[0017] In one possible implementation, the spindle includes an upper spindle and a lower spindle, which are respectively connected to both sides of the fixing member, and the positioning member is connected to the bottom end of the lower spindle.

[0018] On the other hand, embodiments of this application provide an etching apparatus, including: a cavity; an upper electrode module disposed at the top of the cavity; and a lower electrode module disposed at the bottom of the cavity; wherein the lower electrode module includes at least one support state detection mechanism.

[0019] The etching apparatus provided in this application embodiment includes the aforementioned support state detection mechanism, and therefore possesses all the technical effects of the support state detection mechanism, which will not be repeated here.

[0020] In one possible implementation, the lower electrode module includes at least three support state detection mechanisms, and the etching equipment also includes a levelness calculation module, which is electrically connected to each support state detection mechanism.

[0021] In this way, the status detection mechanism of each support body transmits the position data of the guide shaft of each support body to the levelness calculation module, and the levelness calculation module obtains the levelness value of the lower electrode module according to the stored calculation formula.

[0022] In one possible implementation, the lower electrode module includes a cantilever end and a free end disposed opposite to each other; at least three support state detection mechanisms include a first support state detection mechanism, a second support state detection mechanism and a third support state detection mechanism, the first support state detection mechanism being located at the free end, and the second and third support state detection mechanisms being symmetrically arranged with the line connecting the cantilever end and the free end as the line of symmetry. Attached Figure Description

[0023] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0024] Figure 1 This is a schematic diagram of the etching apparatus provided in an embodiment of this application;

[0025] Figure 2 This is a partial structural diagram of the etching apparatus provided in the embodiments of this application;

[0026] Figure 3 for Figure 2 Exploded view of the etching equipment in the diagram;

[0027] Figure 4 This is a schematic diagram of the working process of the support state detection mechanism provided in the embodiments of this application;

[0028] Figure 5 This application provides a layout structure for a support state detection mechanism.

[0029] Explanation of reference numerals in the attached figures:

[0030] 10 - Etching equipment;

[0031] 100 - Cavity; 110 - Transmission port; 120 - Air extraction port; 130 - Main body; 140 - Shielding cover;

[0032] 200 - Upper electrode module; 210 - Spray head; 220 - Upper adapter plate; 230 - Inner heating plate; 240 - Insulating sealing ring; 250 - Upper protective ring; 260 - Fixing ring;

[0033] 300-Lower electrode module; 310-Electrostatic chuck; 320-Lower adapter plate; 330-Lower protective ring; 340-Extension ring; 350-Insulating ring; 360-Base; 361-Mounting slot; 362-Accommodation slot; 370-Support body status detection mechanism; 370a-First support body status detection mechanism; 370b-Second support body status detection mechanism; 370c-Third support body status detection mechanism;

[0034] 371-Support body; 3711-Outer tube; 3712-Guide shaft; 3713-Main shaft; 3714-Fixing component; 3715-Elastic component; 3716-Bellwall; 3717-Upper shaft; 3718-Lower shaft; 372-Positioning component; 373-Position sensor; 374-Sensor bracket;

[0035] 410 - RF source; 420 - RF matching unit; 430 - BUE power supply; 440 - Feed post; 450 - Filter;

[0036] 500 - Lining. Detailed Implementation

[0037] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0038] The support pillars of the lower electrode in CCP etching equipment are prone to jamming due to aging and wear, leading to gaps under the liner and causing problems such as plasma leakage and abnormal pressure control. Currently, the status of the support pillars is typically checked manually periodically, requiring downtime and preventing real-time monitoring, thus impacting the continuous operation efficiency of the equipment. Alternatively, inferring the normality of the support pillars from indirect parameters such as pressure makes it difficult to accurately identify specific abnormalities in the position of the support pillars and provides no timely warnings. Therefore, existing monitoring methods are insufficient to meet the requirements of high reliability and automated operation and maintenance. There is an urgent need for a technical solution that can monitor the position and status of the support pillars in real time to improve the operational safety and maintenance efficiency of CCP etching equipment.

[0039] In view of this, embodiments of this application provide a support status detection mechanism and etching equipment, which realizes real-time and direct monitoring of the position status of the support guide shaft by setting a positioning component and a position sensor. Specifically, the positioning component moves synchronously with the guide shaft of the support, and the position sensor collects the position signal of the positioning component in real time, thereby transforming the previous lagging method of relying on manual shutdown and indirect parameter inference into non-contact online monitoring. It can not only detect abnormalities such as support jamming in a timely manner, but also accurately locate specific abnormal supports, providing accurate basis for equipment maintenance. Once an abnormal support is detected, the equipment can be immediately paused and repaired in a timely manner, effectively avoiding problems such as plasma leakage and pressure control abnormalities caused by the gap between the liner and the lower electrode. Thus, efficient automated operation and maintenance can be achieved, ensuring wafer safety and improving the operational reliability and process stability of the etching equipment.

[0040] The etching equipment and its support status detection mechanism provided in the embodiments of this application will be described in detail below with reference to the accompanying drawings.

[0041] Figure 1 This is a schematic diagram of the etching apparatus provided in an embodiment of this application. (Refer to...) Figure 1 As shown, this application embodiment provides an etching apparatus 10. The etching apparatus 10 can be a CCP etching apparatus, or it can be other types of etching apparatus equipped with the retractable support mentioned later, such as a plasma enhanced chemical vapor deposition (PECVD) apparatus, etc. This application embodiment does not impose specific limitations.

[0042] The etching apparatus 10 includes a cavity 100, an upper electrode module 200, and a lower electrode module 300. The cavity 100 provides a sealed vacuum environment to prevent process gas leakage and external contaminants from contaminating the environment inside the cavity 100. Simultaneously, the cavity 100 serves as the mounting base for the upper electrode module 200 and the lower electrode module 300, enabling their integration within the cavity 100. The upper electrode module 200 can be positioned at the top of the cavity 100, and the lower electrode module 300 at the bottom of the cavity 100.

[0043] The cavity 100 may be provided with a wafer transfer port 110, which may be located, for example, on the side wall of the cavity 100. Wafers can enter and exit the cavity 100 through the wafer transfer port 110. The cavity 100 may also be provided with a vacuum port 120, which is connected to a vacuum pump and used to discharge waste gases and reaction byproducts generated during the process. The vacuum port 120 may be located at... Figure 1 The bottom of the cavity 100 shown, or the air extraction port 120, can also be provided on the side wall of the cavity 100.

[0044] For example, the cavity 100 may include a main body 130 and a shielding cover 140. The main body 130 serves as the main structure of the cavity 100, providing good support. The shielding cover 140 can cover the top opening of the main body 130, and the main body 130 and the shielding cover 140 together form a sealed environment. The upper electrode module 200 and the lower electrode module 300 can be assembled into the cavity 100 through the top opening of the main body 130. The cavity 100 may be cylindrical, and the material of the cavity 100 may be quartz, ceramic, etc.

[0045] Taking the etching apparatus 10 as an example of a CCP etching apparatus 10, the etching apparatus 10 may also include a radio frequency (RF) system, which may include an RF source 410 and an RF matching unit 420. The RF source 410 may be connected to the lower electrode module 300 (e.g., Figure 1 As shown, the upper electrode module 200 is grounded, or connected to the upper electrode module 200 and the lower electrode module 300 is grounded, thereby generating a main electric field between the upper and lower electrodes to ionize the process gas and generate plasma. Furthermore, it can determine the overall plasma density, ion flux, and degree of ionization. The RF matching unit 420 can be connected between the RF source 410 and the lower electrode module 300 (or the upper electrode module 200) to automatically match the RF source 410 with the load impedance, maximizing RF energy coupling efficiency and reducing reflected power loss.

[0046] The radio frequency system may also include a bias upper electrode power (BUE). The BUE power supply 430 can adjust the radio frequency bias voltage of the upper electrode module 200 to precisely control the energy and bombardment direction of ions in the plasma, thereby achieving precise control of the etching process.

[0047] Taking the BUE power supply 430 connected to the upper electrode module 200 as an example, the BUE power supply 430 can be introduced into the cavity 100 through the feed post 440. The feed post 440 passes through the cavity 100 (e.g., the shield 140), with one end connected to the upper electrode module 200 and the other end connected to the BUE power supply 430, so that the radio frequency power of the BUE power supply 430 is introduced into the upper electrode module 200 from outside the cavity 100.

[0048] The RF system may also include a filter 450, which can be connected between the BUE power supply 430 and the upper electrode module 200. For example, the filter 450 can be connected between the feed post 440 and the BUE. The filter 450 can isolate the RF source 410 and the BUE power supply 430, preventing them from interfering with each other's power supply and causing damage. It can also prevent the high voltage and high current of the RF source 410 from entering the BUE power supply 430, thus preventing the BUE power supply 430 from burning out.

[0049] The etching apparatus 10 may also include a liner 500, which shields the inner wall of the cavity 100, protecting it from plasma corrosion and deposit contamination, maintaining process stability, and ensuring the service life of the etching apparatus 10. The liner 500 can be fixed to the inner wall of the cavity 100 and located between the upper electrode module 200 and the lower electrode module 300. The liner 500 can be made of materials such as quartz, silicon, or ceramic, and is not limited thereto.

[0050] like Figure 1 As shown, the upper electrode module 200 may include a spray head 210. The spray head 210, as a core component of the upper electrode module 200, is used to disperse the process gas entering the cavity 100, ensuring uniform distribution of the process gas upon entering the cavity 100. For example, the spray head 210 may be made of metal or ceramic.

[0051] In addition to the spray head 210, the upper electrode module 200 may also include an upper adapter plate 220, an inner heating plate 230, and an insulating sealing ring 240. The upper adapter plate 220 serves as the supporting base for the spray head 210, which is fixed below it. The inner heating plate 230 surrounds the outer periphery of the upper adapter plate 220 and can be connected to the cavity 100, for example... Figure 1The inner heating plate 230 shown is connected between the shield 140 and the main body 130 of the cavity 100. An insulating sealing ring 240 is disposed between the upper adapter plate 220 and the inner heating plate 230. The insulating sealing ring 240 isolates the upper electrode module 200 from the cavity 100, preventing high-voltage arcing, short circuits, and dielectric breakdown. It also maintains a high vacuum in the cavity 100, preventing air leakage or particle falling into the cavity 100.

[0052] The upper adapter disk 220 serves as the RF feed component of the upper electrode module 200, helping to uniformly distribute the RF current. It is used to adjust the RF impedance, reduce reflection, and achieve stable coupling of RF power to the plasma. The upper adapter disk 220 can uniformly distribute the RF current to the disk surface of the spray head 210, reduce the center-edge electric field difference, and improve etching uniformity.

[0053] The inner heating plate 230 can heat the inner liner 500. The inner heating plate 230 precisely controls the temperature within the cavity 100, optimizing the thermal environment within the cavity 100. This ensures the uniformity, repeatability, and equipment stability of the etching process.

[0054] Furthermore, the upper electrode module 200 may also include an upper protective ring 250, which may surround the outer periphery of the spray head 210, for example, the upper protective ring 250 is located at (connected to) the inner edge of the inner heating plate 230. The upper protective ring 250 is used to confine the plasma, preventing the plasma from diffusing from the edge of the upper electrode module 200 to the cavity wall. This improves the uniformity of the plasma within the cavity 100 and increases the plasma density in the central region of the cavity 100. It also protects the edges of the upper electrode module 200 and the inner wall of the cavity 100 from plasma bombardment and deposition. Additionally, it ensures a continuous and stable grounding circuit for the upper electrode module 200, reducing radio frequency reflections and arcing.

[0055] The upper electrode module 200 may further include a retaining ring 260, which surrounds the spray head 210, for example, sandwiched between the spray head 210 and the upper protective ring 250. The retaining ring 260 can press the spray head 210 tightly, ensuring the coaxiality and flatness of the spray head 210 and the upper adapter plate 220. The retaining ring 260 may be detachable for easy removal and replacement of the spray head 210. The retaining ring 260 may also work with the insulating sealing ring 240 to block the air leakage channel between the spray head 210 and the cavity 100. The retaining ring 260 may also serve as the ground terminal of the radio frequency circuit of the upper electrode module 200.

[0056] Continue to refer to Figure 1The lower electrode module 300 may include an electrostatic chuck 310 and a lower adapter disk 320. The electrostatic chuck 310, as a core component of the etching equipment 10, is used to electrostatically adhere and fix the wafer, preventing wafer displacement. The electrostatic chuck 310 has built-in cooling / heating channels to regulate the wafer temperature. The lower adapter disk 320 serves as a support base to support the electrostatic chuck 310.

[0057] The lower electrode module 300 may further include a lower guard ring 330, which surrounds the outer periphery of the electrostatic chuck 310. The lower guard ring 330 is used to confine the plasma around the lower electrode module 300, preventing the plasma from diffusing upwards along the cavity wall of the cavity 100, limiting the plasma above the wafer, and improving the plasma density and uniformity above the wafer. The lower guard ring 330 withstands most of the plasma bombardment, reducing plasma corrosion and deposition on the inner wall of the cavity 100. The lower guard ring 330 is typically grounded, which can stabilize the edge electric field distribution of the lower electrode module 300 and improve the electric field uniformity of the lower electrode module 300.

[0058] An extension ring 340 may also be provided between the lower guard ring 330 and the electrostatic chuck 310. The extension ring 340 is used to extend the effective plasma region outward by one ring, compensating for insufficient plasma density at the wafer edge, improving the edge etching rate of the wafer, and enhancing the wafer contour uniformity. The extension ring 340 can also prevent by-product deposition and high-energy bombardment at the edge of the electrostatic chuck 310, improving the lifespan of the electrostatic chuck 310 and the stability of the process.

[0059] Furthermore, the lower electrode module 300 may also include an insulating ring 350, which may surround the outer periphery of the electrostatic chuck 310, for example, the insulating ring 350 may be disposed between the electrostatic chuck 310 and the lower protection ring 330. The insulating ring 350 is used to electrically isolate the electrostatic chuck 310 from the extension ring 340, the lower protection ring 330, etc., to prevent leakage, short circuit, and edge arcing of the lower electrode module 300. The insulating ring 350 can also change the edge electric field distribution of the lower electrode module 300, reduce the plasma angle distortion at the wafer edge, and improve the etching profile and uniformity of the wafer edge.

[0060] The lower electrode module 300 may also include a base 360, to which the aforementioned lower adapter disk 320 may be fixed. The base 360 ​​may be made of a conductive metal such as molybdenum or stainless steel. The aforementioned RF source 410, matching unit, etc. may be connected to the base 360 ​​to transmit RF power and bias voltage to the electrostatic chuck 310 through the base 360.

[0061] For example, the liner 500 can be connected between the liner heating plate 230 of the upper electrode module 200 and the lower protective ring 330 of the lower electrode module 300.

[0062] The etching apparatus 10 provided in this application embodiment has an adjustable spacing between the upper electrode module 200 and the lower electrode module 300. The spacing between the upper electrode module 200 and the lower electrode module 300 can vary in different steps of the process to flexibly adjust the concentration distribution of plasma and active free radicals, thereby improving etching uniformity and etching yield.

[0063] like Figure 1 As shown, the lower electrode module 300 also includes a support 371, which can be used to directly or indirectly support the inner liner 500. When the upper electrode module 200 and the lower electrode module 300 move relative to each other, for example, when the lower electrode module 300 moves toward or away from the upper electrode module 200, the support 371 extends and retracts as the distance between the upper electrode module 200 and the lower electrode module 300 changes.

[0064] For example, the support 371 can be columnar in shape, such as having an overall outer contour that is cylindrical, cubic, or triangular. This application does not impose specific limitations on this aspect.

[0065] The support body 371 includes an outer tube 3711 and a guide shaft 3712, with the guide shaft 3712 movably disposed within the outer tube 3711. The outer tube 3711 can be fixed to the lower electrode module 300, and the guide shaft 3712 can be used to directly or indirectly abut against the inner liner 500. Through the force exerted by the guide shaft 3712, the lower electrode module 300 can maintain tight contact with the inner liner 500, preventing gaps between them. When the upper electrode module 200 and the lower electrode module 300 move relative to each other in a direction closer together, and the distance between them decreases, the distance between the outer tube 3711 of the support body 371 and the inner liner 500 also decreases, compressing the guide shaft 3712 abutting against the inner liner 500. When the upper electrode module 200 and the lower electrode module 300 move relative to each other in a direction away from each other, and the initial distance between the upper electrode module 200 and the lower electrode module 300 is restored, the distance between the outer tube 3711 of the support 371 and the inner liner 500 increases accordingly, the guide shaft 3712 springs back, and the guide shaft 3712 can directly or indirectly abut against the inner liner 500.

[0066] For example, the support 371 can be generally along the height direction of the etching apparatus 10 ( Figure 1 The outer tube 3711 is set in the Z direction shown in the figure. The axial direction of the outer tube 3711 can extend approximately along the height direction of the etching apparatus 10, and the axial direction of the guide shaft 3712 can be the same as the axial direction of the outer tube 3711. The guide shaft 3712 can move approximately along the height direction of the etching apparatus 10, and the top end of the guide shaft 3712 can directly or indirectly abut against the inner liner 500.

[0067] The following description uses the support 371 as an example, arranged along the height of the etching equipment 10. The upper and lower ends of the outer tube 3711 are its top and bottom ends, respectively, and the upper and lower ends of the guide shaft 3712 are its top and bottom ends, respectively.

[0068] During long-term use, the support body 371 is prone to the guide shaft 3712 becoming stuck and unable to spring back properly. Furthermore, a guide sleeve (not shown in the figure) can be installed inside the outer tube 3711 to guide the guide shaft 3712. The guide sleeve is usually made of rubber, and prolonged operation at high temperatures will accelerate its aging, exacerbating the sticking of the guide shaft 3712. The support body 371 can also contain a plastic component (not shown in the figure) with a significantly different coefficient of thermal expansion than the outer tube 3711. Prolonged operation at high temperatures increases the coefficient of friction of this plastic component, thus causing the guide shaft 3712 to stick.

[0069] It is understandable that if the guide shaft 3712 of a certain support 371 is stuck, then the support 371 itself is considered stuck. Any subsequent descriptions of the support 371 being stuck or abnormal refer to the sticking of the guide shaft 3712 of the support 371.

[0070] If the guide shaft 3712 gets stuck and cannot spring back normally, when the upper electrode module 200 and the lower electrode module 300 return to their initial spacing, a gap will appear below the liner 500 (for example, between the liner 500 and the lower protective ring 330 of the lower electrode module 300), causing problems such as plasma leakage and abnormal pressure control. In severe cases, it may damage the wafer or the etching equipment 10.

[0071] The etching apparatus 10 provided in this application includes a support status detection mechanism 370, which can realize real-time monitoring of the position status of the guide shaft 3712. This allows for timely detection of abnormalities such as jamming of the guide shaft 3712, enabling the etching apparatus 10 to be suspended immediately to avoid problems such as plasma leakage and abnormal pressure control, and allowing for timely repair of the abnormal support 371. The support status detection mechanism 370 includes a positioning element 372, a position sensor 373, and the support 371.

[0072] Figure 2 This is a partial structural diagram of the etching apparatus provided in an embodiment of this application. Figure 3 for Figure 2 An exploded view of the etching equipment. (Refer to...) Figure 2 or Figure 3As shown in the figure, a partial structure of the lower electrode module 300 around the support 371 is illustrated. The support 371 can be mounted on the base 360 ​​of the lower electrode module 300. The outer tube 3711 of the support 371 is fixed to the side wall of the base 360. The guide shaft 3712 of the support 371 extends from the top of the base 360 ​​so that the guide shaft 3712 abuts against the inner liner 500.

[0073] For example, a mounting groove 361 may be provided on the side wall of the base 360, and the outer tube 3711 of the support 371 is at least partially accommodated within the mounting groove 361. In this way, the support 371 is at least partially located within the wall thickness range of the lower adapter disk 320, avoiding the support 371 occupying additional space and saving space in the etching equipment 10. For example, the mounting groove 361 may be located on the inner wall of the lower adapter disk 320, and the support 371 is entirely installed within the lower adapter disk 320, providing better protection for the support 371.

[0074] like Figure 2 or Figure 3 As shown in this embodiment, a positioning element 372 and a position sensor 373 are further configured on the support body 371. The positioning element 372 is connected to the bottom end of the guide shaft 3712, the bottom end of the guide shaft 3712 extends outside the outer tube 3711, and the positioning element 372 is located outside the outer tube 3711. The position sensor 373 is fixed relative to the outer tube 3711 of the support body 371. For example, the position sensor 373 can be fixed on the lower electrode module 300, and the detection surface of the position sensor 373 faces the positioning element 372.

[0075] Combination Figure 1 and Figure 2 As shown, when the upper electrode module 200 and the lower electrode module 300 move relative to each other, and the guide shaft 3712 of the support 371 moves accordingly, the positioning component 372 can move synchronously with the guide shaft 3712. Simultaneously, the position sensor 373 can monitor the position of the positioning component 372 in real time, determine the distance between the positioning component 372 and the position sensor 373 based on the monitoring results, and determine whether the guide shaft 3712 is stuck. By promptly detecting abnormalities in the support 371, the etching equipment 10 can be suspended immediately, and the abnormal support can be repaired in a timely manner. This avoids problems such as plasma leakage and abnormal pressure control, improving the reliability of the etching equipment 10 and the stability of the process.

[0076] The position sensor 373 can feed back the detected position data of the positioning element 372 to the controller (not shown in the figure) in the etching equipment 10 in real time. The controller determines whether the guide shaft 3712 is stuck based on the theoretical data of the position sensor 373 and the positioning element 372.

[0077] In one embodiment, the etching apparatus 10 may also be equipped with an alarm (not shown in the figure), which can be electrically connected to the support status detection mechanism 370. When the support status detection mechanism 370 detects that the position of the positioning member 372 deviates from the normal position, it determines that the support 371 may have a jamming problem and triggers the alarm. This alerts the operator to check in time, or triggers the control device to stop the etching apparatus 10 from operation, avoiding problems such as plasma leakage and abnormal pressure control caused by jamming of the guide shaft 3712.

[0078] like Figure 2 or Figure 3 As shown, the support status detection mechanism 370 may further include a sensor bracket 374, which can be fixed relative to the outer tube 3711 of the support 371, while the position sensor 373 is mounted on the sensor bracket 374. For example, the sensor bracket 374 can be directly connected to the outer tube 3711, such as by connecting the sensor bracket 374 to the bottom end of the outer tube 3711. Alternatively, the sensor bracket 374 can also be fixed to the lower adapter plate 320 of the lower electrode module 300 or other components.

[0079] By connecting the sensor bracket 374 to the outer tube 3711, for example, the sensor bracket 374 can be sleeved outside the guide shaft 3712, and the positioning element 372 is also connected to the guide shaft 3712. In this way, the sensor bracket 374 and the positioning element 372 can be set coaxially, which makes it easier to adjust the position of the position sensor 373 and the positioning element 372, so that the detection surface of the position sensor 373 is accurately aligned with the positioning element 372.

[0080] In some embodiments, the position sensor 373 can be an optical sensor. Correspondingly, the positioning element 372 connected to the bottom end of the guide shaft 3712 can be a reflector. Light emitted by the optical sensor shines directly on the reflector, and the reflector reflects the received light back to the optical sensor. The optical sensor can accurately measure the position of the reflector by receiving the reflected light. For example, the reflector can be formed by depositing a reflective film on a substrate (e.g., plastic, glass), and the reflective film can be made of a highly reflective metal material such as aluminum, silver, or gold.

[0081] For example, the optical sensor can be a confocal sensor. A confocal sensor emits a beam of composite white light in the 440nm~710nm range from a light source, and uses a dispersive lens to focus different wavelengths of monochromatic light at different positions along the measurement direction. The wavelengths that fall precisely on the reflective surface of the reflector are accurately focused, reflected, and returned to the confocal sensor, while other wavelengths are dispersed and cannot enter the confocal sensor. Thus, the confocal sensor can accurately calculate the position of the reflector based on the received wavelengths.

[0082] Optical sensors can also be laser sensors, fiber optic sensors, etc.

[0083] In other examples, the position sensor 373 can also be an ultrasonic sensor. Correspondingly, the positioning element 372 only needs to be able to reflect ultrasonic waves. This application does not impose specific limitations in this regard.

[0084] like Figure 2 or Figure 3 As shown, in some embodiments, one end of the positioning member 372 is connected to the bottom end of the guide shaft 3712 of the support body 371, while the other end of the positioning member 372 extends to the side of the outer tube 3711 of the support body 371. Correspondingly, the position sensor 373 can also be located on the side of the outer tube 3711, and the detection surface of the position sensor 373 can face the positioning member 372.

[0085] The detection surface of the position sensor 373 can be any physical surface or area on the position sensor 373 capable of generating a detection signal; it serves as the "window" through which the position sensor 373 interacts with the positioning element 372. Taking an optical sensor as an example, the detection surface of the position sensor 373 can be a lens at the sensor's front end that emits / receives light. Taking an ultrasonic sensor as an example, the detection surface of the position sensor 373 can be a piezoelectric ceramic wafer or diaphragm at the sensor's front end that emits / receives ultrasonic waves.

[0086] By extending the positioning element 372 to the side of the outer tube 3711 of the support 371, the position sensor 373 can be correspondingly positioned on the side of the outer tube 3711. The position sensor 373 is located within the space occupied by the outer tube 3711 in the height direction of the etching apparatus 10. In this way, the support state detection mechanism 370 occupies a small overall space, which can improve the space utilization of the etching apparatus 10.

[0087] For example, the positioning element 372 can be an elongated strip. This makes the positioning element more adaptable to the space of the etching device 10. The positioning element 372 extends toward the position sensor 373, which reduces the space occupied by the positioning element 372 while enabling the positioning element 372 to cooperate with the position sensor 373 for distance measurement.

[0088] For example Figure 2 and Figure 3As shown, a receiving groove 362 can also be provided on the lower adapter disk 320 of the lower electrode module 300. The receiving groove 362 is located adjacent to the side of the support body 371. The position sensor 373 can be received in the receiving groove 362, and the detection end of the positioning member 372 can also extend into the receiving groove 362. When the sensor bracket 374 is also connected to the bottom end of the outer tube 3711 of the support body 371, the sensor bracket 374 can also extend into the receiving groove 362. In this way, the space occupied by the support body state detection mechanism 370 can be further reduced.

[0089] Figure 4 This is a schematic diagram illustrating the operation of the support state detection mechanism provided in an embodiment of this application. Figure 4 The diagram illustrates how the support state detection mechanism 370 and the inner liner 500 cooperate when the distance between the upper electrode module 200 and the lower electrode module 300 changes. Furthermore, Figure 4 The internal structure of the support 371 is simply illustrated. It should be understood that this method is only for illustration and should not be construed as limiting the actual structure of the support 371.

[0090] Among them, Figure 4 (a) and Figure 1 In this configuration, the upper electrode module 200 and the lower electrode module 300 maintain an initial distance, and the outer tube 3711 of the support body 371 maintains an initial relatively large distance from the inner liner 500. At this time, the guide shaft 3712 of the support body 371 is in its initial position, with a larger proportion of the guide shaft 3712 extending above the top of the outer tube 3711 compared to the proportion extending below the bottom of the outer tube 3711. The distance between the position sensor 373 and the positioning element 372 connected to the bottom of the guide shaft 3712 is an initial relatively small distance.

[0091] Will Figure 4 (b) and Figure 1 Combined, the distance between the upper electrode module 200 and the lower electrode module 300 decreases, and the distance between the outer tube 3711 of the support 371 and the inner liner 500 decreases. At this time, the guide shaft 3712 of the support 371 retracts, and the guide shaft 3712 moves in the direction from the top end of the outer tube 3711 to the bottom end of the outer tube 3711. The length of the guide shaft 3712 extending above the top end of the outer tube 3711 shortens, while the length of the guide shaft 3712 extending below the bottom end of the outer tube 3711 increases. The distance between the position sensor 373 and the positioning element 372 increases.

[0092] For example, by structurally designing the support state detection mechanism 370, the measured value of the position sensor 373 can be set as a reference value (e.g., preset to "0") when the upper electrode module 200 and the lower electrode module 300 are initially spaced apart. When the upper electrode module 200 and the lower electrode module 300 begin to move relative to each other, and the distance between them gradually shortens, the guide shaft 3712 of the support 371 moves along the direction from the top end of the outer tube 3711 to the bottom end of the outer tube 3711, and the measured value of the position sensor 373 changes accordingly. When the upper electrode module 200 and the lower electrode module 300 return to the initial distance, if the guide shaft 3712 is not stuck, the measured value of the position sensor 373 will return to the reference value.

[0093] Thus, by checking whether the detection value of the position sensor 373 changes normally with the moving distance of the upper electrode module 200 and the lower electrode module 300, i.e., whether the curve of the change in the detection value of the position sensor 373 is consistent with the curve of the change in the moving distance between the upper electrode module 200 and the lower electrode module 300, it can be determined whether the position of the guide shaft 3712 of the support body 371 is normal. When the upper electrode module 200 and the lower electrode module 300 restore their initial spacing and the outer tube 3711 of the support body 371 returns to its initial position, by checking whether the measurement value of the position sensor 373 is the reference value, it can be determined whether the guide shaft 3712 of the support body 371 is stuck.

[0094] Continue to refer to Figure 4 The guide shaft 3712 of the support body 371 may include a main shaft 3713 and a fixing member 3714. The top end of the main shaft 3713 may extend above the top end of the outer tube 3711 of the support body 371, and the bottom end of the main shaft 3713 may extend below the bottom end of the outer tube 3711. The fixing member 3714 may be connected between the top end and the bottom end of the main shaft 3713, and the fixing member 3714 is located inside the outer tube 3711.

[0095] The support 371 also includes an elastic element 3715, which is disposed inside the outer tube 3711 and located between the fixing element 3714 and the bottom end of the outer tube 3711. When the guide shaft 3712 moves in the direction from the top end of the outer tube 3711 to the bottom end of the outer tube 3711, the fixing element 3714 drives the elastic element 3715 to compress.

[0096] like Figure 4 As shown in (a), when the upper electrode module 200 and the lower electrode module 300 are at their initial distance, the fixing member 3714 does not compress the elastic member 3715, the elastic member 3715 is in its natural state, or the fixing member 3714 slightly compresses the elastic member 3715, and the compression of the elastic member 3715 is very small. Figure 4As shown in (b), when the distance between the upper electrode module 200 and the lower electrode module 300 decreases, the fixing member 3714 presses down on the elastic member 3715 as the main shaft 3713 moves, and the compression of the elastic member 3715 increases.

[0097] The support body 371 may also include a bellows 3716, which is disposed inside the outer tube 3711 and may be located between the top end of the outer tube 3711 and the fixing member 3714. When the guide shaft 3712 of the support body 371 moves up and down along the axial direction of the outer tube 3711, the bellows 3716 extends and retracts accordingly.

[0098] like Figure 4 As shown in (a), when the upper electrode module 200 and the lower electrode module 300 are initially spaced, the guide shaft 3712 extends above the top of the outer tube 3711, and the bellows 3716 is in a compressed state. Figure 4 As shown in (b), when the distance between the upper electrode module 200 and the lower electrode module 300 decreases, the guide shaft 3712 moves downward and the bellows 3716 extends.

[0099] By setting a bellows 3716 between the top of the outer tube 3711 and the fixing member 3714, the bellows 3716 can buffer and balance the elastic force of the elastic member 3715, improve the stability of the guide shaft 3712 during movement, and also improve the stability of the guide shaft 3712 when it is stopped.

[0100] Continue to refer to Figure 4 In some examples, the main shaft 3713 of the support 371 may include an upper shaft 3717 and a lower shaft 3718, which are respectively connected to both sides of the fixing member 3714. The top of the upper shaft 3717 extends above the top of the outer tube 3711 of the support 371, and the bottom of the lower shaft 3718 extends below the bottom of the outer tube 3711 of the support 371. The positioning member 372 may be connected to the bottom of the lower shaft 3718.

[0101] In this way, the spindle 3713 is divided into an independently detachable upper spindle 3717 and a lower spindle 3718. When the positioning component 372 needs to be replaced, only the lower spindle 3718 needs to be removed from the support body 371. Thus, the disassembly and replacement of the positioning component 372 is simpler and more efficient. Furthermore, after removing the lower spindle 3718, the guide shaft 3712 can still support the inner liner 500 with only the upper spindle 3717, without affecting the normal operation of the etching equipment 10.

[0102] Figure 5 This application provides a layout structure for a support state detection mechanism. Wherein, Figure 5 The outline of the lower electrode module 300 is simply illustrated using a large circle. Furthermore, Figure 5 The positions of the three support status detection mechanisms 370 are simply indicated by three small circles.

[0103] like Figure 5 As shown, the etching apparatus 10 is provided with at least three support state detection mechanisms 370, each of which can be located at a different position in the circumferential direction of the lower electrode module 300. These at least three support state detection mechanisms 370 can form a levelness detection system to detect the levelness of the lower electrode module 300 relative to the bottom surface of the etching apparatus 10.

[0104] Will Figure 5 and Figure 1 In this embodiment, the positions of each support state detection mechanism 370 correspond to those of each support 371. The number of support state detection mechanisms 370 and their specific positions on the lower electrode module 300 are not limited and can be configured according to actual needs. For example, the support state detection mechanisms 370 can be located at the edge of the lower electrode module 300, and the support state detection mechanisms 370 can be arranged at equal or unequal intervals.

[0105] The lower electrode module 300 may have a cantilever end a and a free end b arranged opposite to each other. The cantilever end a can be the fixed end of the lower electrode module 300, and the free end b is located at the end of the lower electrode module 300 away from the cantilever end a. A drive motor used to drive the movement of the lower electrode module 300 may be located at the cantilever end a of the lower electrode module 300. By driving the cantilever end a of the lower electrode module 300 to move through the drive motor, the lower electrode module 300 as a whole is moved.

[0106] Since the lower electrode module 300 has a cantilever end a and a free end b, and is not fixed at both ends or subjected to balanced forces at both ends, it may be unbalanced. Therefore, by using at least three support state detection mechanisms 370 to detect the position of the guide shafts 3712 of at least three supports 371, and integrating and calculating the position data of the at least three guide shafts 3712, the levelness of the lower electrode module 300 can be determined. Furthermore, based on the calculated levelness value of the lower electrode module 300, the attitude of the lower electrode module 300 can be adjusted by controlling the controller to improve the levelness of the lower electrode module 300, thereby enhancing the reliability of the etching equipment 10 and the accuracy of the process.

[0107] To calculate the levelness of the lower electrode module 300, the etching apparatus 10 may further include a levelness calculation module, which is electrically connected to each support state detection mechanism 370. The levelness calculation module can store levelness calculation formulas, which can be derived based on the positional relationship between the support state detection mechanisms 370. If the positional relationship between the support state detection mechanisms 370 is set differently, different calculation formulas can be used accordingly. Each support state detection mechanism 370 transmits the position data of the guide shaft 3712 of each support 371 to the levelness calculation module, which then obtains the levelness value of the lower electrode module 300 according to the stored calculation formulas.

[0108] like Figure 5 As shown, for example, the lower electrode module 300 may include three support state detection mechanisms 370. In this embodiment, the three support state detection mechanisms 370 are defined as the first support state detection mechanism 370a, the second support state detection mechanism 370b, and the third support state detection mechanism 370c.

[0109] Among them, the first support state detection mechanism 370a can be located at the free end b of the lower electrode module 300, and the line connecting the cantilever end a and the free end b of the lower electrode module 300 ( Figure 5 The dotted line shown is used as the line of symmetry C. The second support state detection mechanism 370b and the third support state detection mechanism 370c are symmetrically arranged about this line of symmetry C. Thus, the first support state detection mechanism 370a, the second support state detection mechanism 370b, and the third support state detection mechanism 370c can form an isosceles triangle by connecting the lines between them in sequence.

[0110] When the lower electrode module 300 is in its initial position and the distance between the lower electrode module 300 and the upper electrode module 200 is the initial gap, the measured value detected by the first support state detection mechanism 370a is defined as A1, the measured value of the second support state detection mechanism 370b is defined as A2, and the measured value of the third support state detection mechanism is defined as A3. Figure 5 Taking the paper orientation shown as an example, the lower electrode module 300 is in the left-right direction ( Figure 5 The formula for calculating the levelness value L1 in the X direction (as shown) is as follows: L1 = (A1 - (A2 + A3) / 2) / L, where the lower electrode module 300 is in the front-rear direction ( Figure 5 The formula for calculating the levelness value L2 in the Y direction (as shown in the figure) is as follows: L2 = (A2 - A3) / R.

[0111] Wherein, L is the distance from the line connecting the second support state detection mechanism 370b and the third support state detection mechanism 370c to the first support state detection mechanism 370a, and R is the distance between the second support state detection mechanism 370b and the third support state detection mechanism 370c.

[0112] In other examples, the lower electrode module 300 may also include four, five, or more support state detection mechanisms 370, and the levelness calculation formula can be set according to the relative positional relationship between the support state detection mechanisms 370. The levelness calculation formula may differ depending on the number and relative position of the support state detection mechanisms 370.

[0113] Taking the electrode module 300 below, which includes four support state detection mechanisms 370 as an example, the four support state detection mechanisms 370 can be connected in sequence to form a rectangle or a rhombus. Taking the electrode module 300 below, which includes five support state detection mechanisms 370 as an example, the five support state detection mechanisms 370 can be connected in sequence to form a regular pentagon.

[0114] The terminology used in the embodiments of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of this application. The singular forms “a,” “the,” and “the” used in the embodiments of this application and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise.

[0115] It should be understood that the terms "first," "second," etc., used in this application are for distinguishing purposes only and should not be construed as indicating or implying relative importance or order.

[0116] It should be noted that in the embodiments of this application, the words "exemplarily" or "for example" are used to indicate examples, illustrations, or explanations. Any embodiment or design scheme described as "exemplarily" or "for example" in the embodiments of this application should not be construed as being more preferred or more advantageous than other embodiments or design schemes. Specifically, the use of the words "exemplarily" or "for example" is intended to present the relevant concepts in a specific manner. In the description of this application, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0117] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A support structure state detection mechanism, characterized in that, include: A support body, the support body including an outer tube and a guide shaft movably disposed inside the outer tube, the bottom end of the guide shaft extending outside the bottom end of the outer tube; A positioning element, which is connected to the bottom end of the guide shaft and located outside the outer tube; A position sensor is fixed relative to the outer tube, and the detection surface of the position sensor faces the positioning element.

2. The support state detection mechanism according to claim 1, characterized in that, The positioning element is a reflective element, and the position sensor is an optical sensor.

3. The support state detection mechanism according to claim 1 or 2, characterized in that, It also includes a sensor bracket, which is fixed relative to the outer tube, and the position sensor is mounted on the sensor bracket.

4. The support state detection mechanism according to any one of claims 1-3, characterized in that, The positioning element is a strip-shaped element, with one end connected to the bottom end of the guide shaft and the other end extending to the side of the outer tube.

5. The support state detection mechanism according to any one of claims 1-3, characterized in that, The guide shaft includes a main shaft and a fixing member, wherein the fixing member is connected to the main shaft; The support also includes an elastic element disposed inside the outer tube, the elastic element being disposed between the fixing element and the bottom end of the outer tube.

6. The support state detection mechanism according to claim 5, characterized in that, The support also includes a corrugated pipe disposed inside the outer tube, the corrugated pipe being disposed between the top end of the outer tube and the fixing member.

7. The support state detection mechanism according to claim 5, characterized in that, The main shaft includes an upper shaft and a lower shaft, which are respectively connected to both sides of the fixing member, and the positioning member is connected to the bottom end of the lower shaft.

8. An etching apparatus, characterized in that, include: cavity; The upper electrode module is located at the top of the cavity; The lower electrode module is located in the lower part of the cavity; The lower electrode module includes at least one support state detection mechanism as described in any one of claims 1-7.

9. The etching apparatus according to claim 8, characterized in that, The lower electrode module includes at least three support state detection mechanisms, and the etching equipment also includes a levelness calculation module, which is electrically connected to each of the support state detection mechanisms.

10. The etching apparatus according to claim 9, characterized in that, The lower electrode module includes a cantilever end and a free end that are arranged opposite to each other; The at least three support status detection mechanisms include a first support status detection mechanism, a second support status detection mechanism, and a third support status detection mechanism. The first support status detection mechanism is located at the free end, and the second and third support status detection mechanisms are symmetrically arranged with the line connecting the cantilever end and the free end as the line of symmetry.

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