High-isolation substrate integrated waveguide filter crossover and method of manufacture

Abstract

The application belongs to the field of filter cross-connection, and discloses a high-isolation substrate integrated waveguide filter cross-connection and a manufacturing method. The filter cross-connection is composed of upper and lower metal layers and a dielectric substrate to form a substrate integrated waveguide structure, and four resonant cavities are enclosed by metallized vias. Meanwhile, coplanar waveguide resonators with ends extending into the cavities are embedded in the first and second metal layers respectively, and the two are placed orthogonally to form two mutually intersecting third-order Chebyshev filter channels. The filter cross-connection can widen the working bandwidth without sacrificing the isolation, and the embedded coplanar waveguide resonators can significantly compress the circuit size, and give each filter channel independent adjustment capability, so as to balance high isolation, wide band, compactness and design flexibility, and can adapt to the high performance requirements of multi-functional integrated wireless communication systems.

Description

Technical Field

[0001] This invention belongs to the field of filter jumper technology, and particularly relates to a high-isolation substrate integrated waveguide filter jumper and its manufacturing method. Background Technology

[0002] As wireless communication technology continues to evolve towards high performance, multifunctionality, and high integration, the requirements for the integration and performance indicators of various passive components in RF front-end systems are constantly increasing. Filter jumpers are key integrated devices with dual functions of signal cross-transmission and out-of-band interference suppression. Compared to the traditional implementation scheme of separate cascaded jumpers and filters, their multifunctional integrated design effectively reduces circuit size and transmission loss, making them irreplaceable in high-performance wireless communication systems. Substrate integrated waveguide technology, with its outstanding advantages such as low loss, planar structure, high integration, and ease of integration with planar circuits, has become the mainstream technology path for high-performance filter jumper design. Currently, publicly available substrate integrated waveguide filter jumpers are mainly based on a dual-mode resonant cavity mechanism.

[0003] However, existing substrate-integrated waveguide filter jumpers based on dual-mode resonant cavity mechanisms still have several technical shortcomings. On the one hand, there are significant performance limitations in channel isolation and operating bandwidth. When the operating bandwidth is widened, the channel isolation deteriorates significantly, failing to guarantee signal transmission quality in broadband scenarios. On the other hand, the overall circuit size of this type of structure is relatively large, with limited miniaturization, restricting further improvements in system integration density. In addition, the filter channels in existing structures typically lack independent control capabilities, resulting in insufficient design flexibility and difficulty in meeting the needs of multi-band and differentiated applications, thus limiting their applicability in multi-functional integrated systems.

[0004] It is evident that existing substrate-integrated waveguide filter jumpers based on dual-mode resonant cavities cannot simultaneously achieve high isolation, wide operating bandwidth, compact size, and independent channel control capabilities, thus failing to fully meet the development needs of high-performance, multi-functional integrated wireless communication systems. Summary of the Invention

[0005] This invention provides a high-isolation substrate integrated waveguide filter jumper and its manufacturing method. Using this filter jumper can simultaneously achieve high isolation, wide operating bandwidth, compact size and independent channel control capability, which can fully meet the development needs of high-performance multifunctional integrated wireless communication systems.

[0006] To achieve the above objectives, the present invention employs the following technical content: A high-isolation substrate integrated waveguide filter jumper includes a first metal layer, a first dielectric substrate, and a second metal layer; the first metal layer, the first dielectric substrate, and the second metal layer are stacked sequentially from top to bottom, and each of the three layers has multiple metallized vias. The metallized vias penetrate the first dielectric substrate in a vertical direction and together with the first metal layer and the second metal layer, form a substrate integrated waveguide structure. The metallized vias enclose and form four substrate integrated waveguide resonant cavities: a first substrate integrated waveguide resonant cavity, a second substrate integrated waveguide resonant cavity, a third substrate integrated waveguide resonant cavity, and a fourth substrate integrated waveguide resonant cavity. It also includes a first coplanar waveguide resonator disposed on the first metal layer and a second coplanar waveguide resonator disposed on the second metal layer. The ends of the two coplanar waveguide resonators are embedded inside the corresponding substrate integrated waveguide resonator cavity, and the two are orthogonally placed. The filter jumper has two intersecting filter channels, each of which consists of two substrate integrated waveguide resonators and a coplanar waveguide resonator forming a third-order Chebyshev filter response.

[0007] Furthermore, the first substrate integrated waveguide resonator, the second substrate integrated waveguide resonator, the third substrate integrated waveguide resonator, and the fourth substrate integrated waveguide resonator all operate in TE101 mode; the first coplanar waveguide resonator and the second coplanar waveguide resonator both operate in full-wavelength resonant mode.

[0008] Furthermore, the filter jumper also includes four microstrip lines: a first microstrip line, a second microstrip line, a third microstrip line, and a fourth microstrip line, which serve as four input / output ports; all four microstrip lines are disposed on the first metal layer. The first filter channel is input from the first microstrip line, sequentially coupled to the first coplanar waveguide resonator via the first substrate integrated waveguide resonator, then coupled to the third substrate integrated waveguide resonator, and finally output from the third microstrip line.

[0009] Furthermore, the second filter channel is input from the second microstrip line, sequentially coupled to the second coplanar waveguide resonator via the second substrate integrated waveguide resonator, then coupled to the fourth substrate integrated waveguide resonator, and finally output from the fourth microstrip line.

[0010] Furthermore, the four substrate integrated waveguide resonators are arranged in a 2×2 array, and the dimensions of the first substrate integrated waveguide resonator, the second substrate integrated waveguide resonator, the third substrate integrated waveguide resonator, and the fourth substrate integrated waveguide resonator are exactly the same; the dimensions of the first coplanar waveguide resonator and the second coplanar waveguide resonator are exactly the same.

[0011] Furthermore, the first dielectric substrate is made of Rogers 5880 substrate; Both the first metal layer and the second metal layer are made of copper.

[0012] Furthermore, the ends of the first coplanar waveguide resonator are respectively embedded inside the first substrate integrated waveguide resonator and the third substrate integrated waveguide resonator; the ends of the second coplanar waveguide resonator are respectively embedded inside the second substrate integrated waveguide resonator and the fourth substrate integrated waveguide resonator. The first filtering channel is composed of a first substrate integrated waveguide resonant cavity, a third substrate integrated waveguide resonant cavity, and a first coplanar waveguide resonator; The second filtering channel consists of a second substrate integrated waveguide resonant cavity, a fourth substrate integrated waveguide resonant cavity, and a second coplanar waveguide resonator.

[0013] Furthermore, the center-to-center spacing between two adjacent metallized vias is 0.7~0.8mm.

[0014] A method for manufacturing a high-isolation substrate integrated waveguide filter jumper includes the following steps: Provide a first dielectric substrate; A first metal layer is formed on the upper surface of the first dielectric substrate, and a second metal layer is formed on the lower surface of the first dielectric substrate; Multiple vertically penetrating metallized vias are formed on the first metal layer, the first dielectric substrate, and the second metal layer, so that the metallized vias together with the first metal layer and the second metal layer constitute a substrate integrated waveguide structure. Four ports—a first microstrip line, a second microstrip line, a third microstrip line, and a fourth microstrip line—are fabricated on the first metal layer, along with a first coplanar waveguide resonator; a second coplanar waveguide resonator is fabricated on the second metal layer. The first, second, third, and fourth substrate integrated waveguide resonant cavities are formed by enclosing the metallized vias. The ends of two coplanar waveguide resonators are embedded inside the corresponding substrate integrated waveguide resonant cavities to achieve coupling. The first and second coplanar waveguide resonators are placed orthogonally to form two intersecting filter channels. Each filter channel forms a third-order Chebyshev filter response, resulting in a high-isolation substrate integrated waveguide filter jumper.

[0015] Furthermore, the first substrate integrated waveguide resonant cavity, the second substrate integrated waveguide resonant cavity, the third substrate integrated waveguide resonant cavity, and the fourth substrate integrated waveguide resonant cavity are all configured to operate in TE101 mode, and the first coplanar waveguide resonator and the second coplanar waveguide resonator are both configured to operate in full-wavelength resonant mode. The first filter channel is input from the first microstrip line, sequentially coupled to the first coplanar waveguide resonator through the first substrate integrated waveguide resonator, then coupled to the third substrate integrated waveguide resonator, and finally output from the third microstrip line. The second filter channel is input from the second microstrip line, sequentially coupled to the second coplanar waveguide resonator via the second substrate integrated waveguide resonator, then coupled to the fourth substrate integrated waveguide resonator, and finally output from the fourth microstrip line.

[0016] Compared with the prior art, the present invention has the following beneficial effects: This invention provides a high-isolation substrate-integrated waveguide filter bridge, which employs upper and lower metal layers and a dielectric substrate to form a substrate-integrated waveguide structure. Four resonant cavities are enclosed by metallized vias. Coplanar waveguide resonators with their ends extending into the cavities are embedded in the first and second metal layers, and are orthogonally placed to form two intersecting third-order Chebyshev filter channels. The orthogonal coplanar waveguide resonators effectively suppress electromagnetic coupling between the intersecting channels, avoiding signal crosstalk. Each channel is composed of two substrate-integrated waveguide resonant cavities and one coplanar waveguide resonator, independently achieving a third-order filter response. Therefore, the frequency and bandwidth of each channel can be adjusted independently. Using this filter bridge, the operating bandwidth can be widened without sacrificing isolation. Simultaneously, the embedded coplanar waveguide resonators significantly compress the circuit size and provide each filter channel with independent adjustment capabilities, thus balancing high isolation, wide bandwidth, compactness, and design flexibility, meeting the high-performance requirements of multifunctional integrated wireless communication systems.

[0017] This invention also provides a method for manufacturing a high-isolation substrate integrated waveguide filter bridge. The method first forms a metal layer on the upper and lower surfaces of a dielectric substrate, then processes vertically penetrating metallized vias to form a substrate integrated waveguide structure. Next, four microstrip line ports and two coplanar waveguide resonators are fabricated. Four resonant cavities are enclosed by the vias, and the ends of the coplanar waveguide resonators are embedded within the cavities and placed orthogonally, thus forming two intersecting third-order Chebyshev filter channels. The orthogonal coplanar waveguide resonators ensure that the coupling electric field directions of the two channels are perpendicular to each other, effectively suppressing crosstalk. Each channel is cascaded with a substrate integrated waveguide resonator and a full-wavelength coplanar waveguide resonator, allowing for independent formation and control of a third-order filter response. This manufacturing method is simple, easy to integrate, and the resulting bridge maintains high isolation even when bandwidth is widened. It has a compact overall size, and each channel is independently adjustable, meeting the needs of multi-band differentiated applications and is suitable for high-performance, multi-functional integrated wireless communication systems. Attached Figure Description

[0018] Figure 1 A schematic diagram of a high-isolation substrate integrated waveguide filter jumper provided in an embodiment of the present invention; Figure 2The S-parameter curve of port 1 of the high-isolation substrate integrated waveguide filter jumper provided in the embodiment of the present invention for simulation and testing; Figure label: 1. First metal layer; 2. First dielectric substrate; 3. Second metal layer; 4. First microstrip line; 5. Second microstrip line; 6. Third microstrip line; 7. Fourth microstrip line; 8. First substrate integrated waveguide resonator; 9. Second substrate integrated waveguide resonator; 10. Third substrate integrated waveguide resonator; 11. Fourth substrate integrated waveguide resonator; 12. First coplanar waveguide resonator; 13. Second coplanar waveguide resonator. Detailed Implementation

[0019] To make the technical problems solved by the present invention, the technical solutions, and the beneficial effects clearer, the following specific embodiments provide a further detailed description of the present invention. It should be understood that the specific embodiments described herein are merely illustrative and are not intended to limit the scope of the invention.

[0020] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0021] Therefore, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the invention without inventive effort are within the scope of protection of the invention.

[0022] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0023] The technical terms used in this invention are explained as follows: TE101 mode: It is a transverse electric resonance mode in which the electric field in the rectangular resonant cavity forms a standing wave of half a wavelength in both the length and height directions, remains unchanged in the width direction, and the direction of the electric field is perpendicular to the propagation direction.

[0024] As mentioned in the background section, traditional substrate-integrated waveguide filter jumpers are mainly based on a dual-mode resonant cavity mechanism. However, this design method still suffers from problems such as a significant deterioration in inter-channel isolation with increasing bandwidth and a large circuit size, which limits its application in multifunctional integrated systems.

[0025] To address the aforementioned issues, this embodiment provides a high-isolation substrate integrated waveguide filter jumper. This structure is implemented on a single-layer dielectric substrate and features compact circuit size, high integration, and superior isolation. Furthermore, each filter channel can be independently controlled.

[0026] For example, this embodiment provides a high-isolation substrate-integrated waveguide filter bridge, comprising a dielectric substrate and two metal layers printed on the upper and lower layers of the substrate, respectively. A substrate-integrated waveguide structure is formed by drilling metallized vias in the dielectric substrate and the two metal layers. The filter bridge consists of microstrip lines with four input ports, four substrate-integrated waveguide resonant cavities, and two coplanar waveguide resonators. Each filter channel of the filter bridge comprises a third-order Chebyshev filter response formed by two substrate-integrated waveguide resonators and one coplanar waveguide resonator. The two coplanar waveguide resonators are located on the upper and lower metal layers of the dielectric substrate, respectively, and their ends are embedded inside the substrate-integrated waveguide resonators to achieve coupling with them.

[0027] The high-isolation substrate integrated waveguide filter jumper provided in this embodiment will be further explained and described below with reference to the accompanying drawings: like Figure 1 As shown, this embodiment provides a high-isolation substrate integrated waveguide filter jumper. This embodiment provides a high-isolation substrate integrated waveguide filter jumper, such as Figure 1 As shown, the filter bridge consists of a single-layer dielectric substrate and two metal layers, specifically including a first metal layer 1, a first dielectric substrate 2, and a second metal layer 3, which are stacked sequentially from top to bottom. Multiple metallized vias are formed on the first metal layer 1, the first dielectric substrate 2, and the second metal layer 3. These metallized vias penetrate the first dielectric substrate 2 vertically and, together with the first metal layer 1 and the second metal layer 3, form a substrate integrated waveguide structure. By rationally designing the enclosure area of ​​the metallized vias, multiple resonant cavities can be formed, thus providing a foundation for the realization of the filtering function.

[0028] Furthermore, multiple metallized vias enclose and form four substrate integrated waveguide resonant cavities: a first substrate integrated waveguide resonant cavity 8, a second substrate integrated waveguide resonant cavity 9, a third substrate integrated waveguide resonant cavity 10, and a fourth substrate integrated waveguide resonant cavity 11, and the four substrate integrated waveguide resonant cavities are arranged in a 2×2 matrix.

[0029] The filter bridge also includes a first coplanar waveguide resonator 12 disposed on the first metal layer 1 and a second coplanar waveguide resonator 13 disposed on the second metal layer 3. The ends of both coplanar waveguide resonators are embedded inside the corresponding substrate integrated waveguide resonant cavities, and they are orthogonally placed. Specifically, the ends of the first coplanar waveguide resonator 12 are embedded inside the first substrate integrated waveguide resonant cavity 8 and the third substrate integrated waveguide resonant cavity 10, respectively; the ends of the second coplanar waveguide resonator 13 are embedded inside the second substrate integrated waveguide resonant cavity 9 and the fourth substrate integrated waveguide resonant cavity 11, respectively. Through this end-embedding method, electromagnetic coupling is generated between the coplanar waveguide resonators and the substrate integrated waveguide resonant cavities, thereby enabling signal transmission between the resonant cavities. In this embodiment, the coupling strength between the coplanar waveguide resonators and the substrate integrated waveguide resonant cavities can be adjusted by the embedding depth and relative position, providing a high degree of design freedom and facilitating the achievement of the desired filtering response. Meanwhile, the two coplanar waveguide resonators are located on the upper and lower metal layers respectively and are placed orthogonally. This orthogonal structure can significantly suppress electromagnetic crosstalk between the two filter channels and improve the isolation between the channels.

[0030] In this embodiment, the filter bridge has two intersecting filter channels. Each filter channel consists of two substrate-integrated waveguide resonators and one coplanar waveguide resonator, forming a third-order Chebyshev filter response. Specifically, the first filter channel is composed of a first substrate-integrated waveguide resonator 8, a third substrate-integrated waveguide resonator 10, and a first coplanar waveguide resonator 12. The second filter channel is composed of a second substrate-integrated waveguide resonator 9, a fourth substrate-integrated waveguide resonator 11, and a second coplanar waveguide resonator 13. Although the two filter channels intersect spatially, high isolation between them is achieved through reasonable resonant mode selection and orthogonal placement. In this embodiment, the third-order Chebyshev filter response provides steep out-of-band suppression and good passband flatness, enabling the filter bridge to effectively transmit signals within the desired frequency band while suppressing interference signals. It should be noted that the two filter channels of the filter jumper provided in this embodiment have the same frequency, the same filter order, and the same bandwidth. In practical applications, designs with different channel frequencies, different filter orders, and different bandwidths are also applicable.

[0031] Furthermore, the filter jumper also includes a first microstrip line 4, a second microstrip line 5, a third microstrip line 6, and a fourth microstrip line 7, which serve as four input and output ports. All four microstrip lines are disposed on the first metal layer 1. Specifically, the first filter channel is input via the first microstrip line 4, sequentially coupled to the first coplanar waveguide resonator 12 via the first substrate integrated waveguide resonator 8, then coupled to the third substrate integrated waveguide resonator 10, and finally output via the third microstrip line 6. The second filter channel is input via the second microstrip line 5, sequentially coupled to the second coplanar waveguide resonator 13 via the second substrate integrated waveguide resonator 9, then coupled to the fourth substrate integrated waveguide resonator 11, and finally output via the fourth microstrip line 7. In this embodiment, the microstrip line serves as a transition structure between the external port and the resonator, achieving good impedance matching with the external circuit and reducing reflection loss during signal transmission. Explained as follows, the two filter channels intersect, but signals enter from their respective input ports and are transmitted to their corresponding output ports, thus realizing the cross-wiring and frequency selection functions of the filter jumper.

[0032] In another preferred embodiment, the first substrate integrated waveguide resonator 8, the second substrate integrated waveguide resonator 9, the third substrate integrated waveguide resonator 10, and the fourth substrate integrated waveguide resonator 11 all operate in TE101 mode, while the first coplanar waveguide resonator 12 and the second coplanar waveguide resonator 13 both operate in full-wavelength resonant mode. In this embodiment, TE101 mode is one of the fundamental modes of the substrate integrated waveguide resonator, with its electric field distribution being strongest at the center and weakest around the perimeter, facilitating stable coupling with the coplanar waveguide resonators. Furthermore, in full-wavelength resonant mode, the electric field in the central region of the coplanar waveguide resonator is zero. Therefore, when two coplanar waveguide resonators are placed orthogonally, the electric and magnetic field couplings between them are effectively canceled, resulting in extremely high isolation. Explained, the choice of operating mode is closely related to the size and structure of the resonators. This embodiment, through precise design of the physical dimensions of the resonator and the coplanar waveguide resonator, ensures stable resonance within the target frequency band, thereby guaranteeing the electrical performance of the filter jumper.

[0033] Furthermore, the dimensions of the first substrate integrated waveguide resonator 8, the second substrate integrated waveguide resonator 9, the third substrate integrated waveguide resonator 10, and the fourth substrate integrated waveguide resonator 11 are identical; the dimensions of the first coplanar waveguide resonator 12 and the second coplanar waveguide resonator 13 are also identical. In this embodiment, the identical resonator dimensions ensure that the response curves of the two filter channels are completely consistent, thereby guaranteeing that the filter jumper does not introduce additional signal amplitude and phase imbalance during cross-wiring, thus improving the overall consistency of the system.

[0034] Specifically, the first dielectric substrate 2 is made of Rogers 5880 substrate with a dielectric constant of 2.2 and a thickness of 0.254 mm. The first metal layer 1 and the second metal layer 3 are both made of copper with a thickness of 0.018 mm. In this embodiment, the Rogers 5880 substrate has low dielectric loss and a stable dielectric constant, enabling it to maintain excellent transmission characteristics at higher frequency bands. The copper metal layer has good conductivity and processability, which can reduce the ohmic loss of the metal conductor, thereby improving the insertion loss and power capacity of the filter jumper. Explained, the thickness and dielectric constant of the dielectric substrate determine the resonant frequency and operating bandwidth of the substrate-integrated waveguide resonant cavity. The selection of these parameters allows the filter jumper to achieve good in-band characteristics and out-of-band rejection within the target frequency band.

[0035] Furthermore, the center-to-center spacing between two adjacent metallized vias is 0.7–0.8 mm, preferably 0.75 mm in this embodiment. All metallized vias have a diameter of 0.4 mm. In this embodiment, the spacing and diameter of the metallized vias need to meet the condition of periodic arrangement to reduce electromagnetic leakage. Appropriate via diameter and spacing ensure the integrity of the substrate-integrated waveguide structure while avoiding the increased processing difficulty caused by overly dense arrangement. Explained, a smaller via spacing can provide better electromagnetic shielding, but it increases processing costs and manufacturing complexity. The range selected in this embodiment balances performance with process feasibility.

[0036] In this embodiment, a method for manufacturing the aforementioned high-isolation substrate integrated waveguide filter jumper is also provided, comprising the following steps: providing a first dielectric substrate 2; forming a first metal layer 1 on the upper surface of the first dielectric substrate 2 and a second metal layer 3 on the lower surface of the first dielectric substrate 2; processing and forming a plurality of vertically penetrating metallized vias on the first metal layer 1, the first dielectric substrate 2, and the second metal layer 3, such that the metallized vias together with the first metal layer 1 and the second metal layer 3 constitute a substrate integrated waveguide structure; and fabricating four ports—a first microstrip line 4, a second microstrip line 5, a third microstrip line 6, and a fourth microstrip line 7—and a first coplanar waveguide on the first metal layer 1. Resonator 12; a second coplanar waveguide resonator 13 is formed on the second metal layer 3; a first substrate integrated waveguide resonator 8, a second substrate integrated waveguide resonator 9, a third substrate integrated waveguide resonator 10, and a fourth substrate integrated waveguide resonator 11 are formed by enclosing them through metallized vias, and the four substrate integrated waveguide resonators are arranged in a 2×2 matrix; the ends of two coplanar waveguide resonators are embedded into the corresponding substrate integrated waveguide resonator cavities to achieve coupling, and the first coplanar waveguide resonator 12 and the second coplanar waveguide resonator 13 are placed orthogonally to form two intersecting third-order Chebyshev filter channels, thus obtaining a high-isolation substrate integrated waveguide filter jumper.

[0037] In another preferred embodiment, in the manufacturing method, the first substrate integrated waveguide resonator 8, the second substrate integrated waveguide resonator 9, the third substrate integrated waveguide resonator 10, and the fourth substrate integrated waveguide resonator 11 are all configured to operate in TE101 mode, and the first coplanar waveguide resonator 12 and the second coplanar waveguide resonator 13 are both configured to operate in full-wavelength resonant mode. Specifically, the first filter channel is input via the first microstrip line 4, sequentially coupled to the first coplanar waveguide resonator 12 via the first substrate integrated waveguide resonator 8, then coupled to the third substrate integrated waveguide resonator 10, and finally output via the third microstrip line 6; the second filter channel is input via the second microstrip line 5, sequentially coupled to the second coplanar waveguide resonator 13 via the second substrate integrated waveguide resonator 9, then coupled to the fourth substrate integrated waveguide resonator 11, and finally output via the fourth microstrip line 7. In this embodiment, by setting the resonant mode as described above and combining it with two orthogonally placed coplanar waveguide resonators, the two cross-filtering channels maintain high isolation within the operating frequency band, while simultaneously achieving a third-order Chebyshev filter response. Specifically, when a signal is input from the first microstrip line 4, the electromagnetic energy is coupled to the first coplanar waveguide resonator 12 after being enhanced by the TE101 mode resonance of the first substrate integrated waveguide resonator 8. Since the first coplanar waveguide resonator 12 operates in full-wavelength mode, its central electric field is zero. The signal passes through this resonator and is then coupled to the third substrate integrated waveguide resonator 10, and finally output from the third microstrip line 6. Similarly, the signal input from the second microstrip line 5 is output from the fourth microstrip line 7 after passing through the second substrate integrated waveguide resonator 9, the second coplanar waveguide resonator 13, and the fourth substrate integrated waveguide resonator 11. Because the coplanar waveguide resonators in the two channels are located on the upper and lower layers respectively and are orthogonal, the electric and magnetic field coupling between the two channels is significantly weakened, thereby achieving high isolation. In this embodiment, the above structure also enables the filter jumper to achieve the filtering function of the cross-channel without increasing the number of dielectric substrate layers, which is beneficial to the miniaturization and integration of the device. Explained, the filter jumper of this embodiment can be directly applied to microwave and millimeter-wave systems where signal crossing and filtering isolation are required, such as the feed network of a phased array antenna and multi-channel transceiver front-ends, and has good engineering application prospects.

[0038] For example, such as Figure 2 As shown, Figure 2The dashed lines represent simulations, while the solid lines represent tests. S-parameters are the scattering parameters of microwave networks, used to describe the reflection and transmission characteristics of ports in RF and microwave circuits. Frequency is used to show the variation of S-parameters at different frequencies. S11, S21, S31, and S41 represent the S-parameters corresponding to port 1. The numbers following these represent input ports, and the numbers preceding them represent output ports. For example, S21 represents the S-parameters from the input at port 1 to the output at port 2. It can be seen that the tested isolation is greater than 39.6 dB, thus exhibiting high isolation characteristics. Furthermore, the reflection coefficient demonstrates a good filtering response.

[0039] In summary, this invention provides a high-isolation substrate integrated waveguide filter jumper and its manufacturing method, which has the following advantages compared with existing filter jumpers: First, the present invention employs two resonant structures: substrate integrated waveguide resonant cavity and coplanar waveguide resonator. By placing two coplanar waveguide resonators orthogonally, extremely high isolation is achieved.

[0040] Secondly, the coplanar waveguide resonator of the present invention is embedded in four substrate integrated waveguide resonant cavities without increasing the size of the resonant circuit, thus making it more compact and with higher integration.

[0041] Third, since each filter channel has an independent resonator configuration and there is no shared resonator unit, the present invention can flexibly adjust the frequency of the two channels simply by changing the size of their respective resonators, thus providing greater design flexibility.

[0042] The above embodiments are merely one of the implementation methods for achieving the technical solution of the present invention. The scope of protection claimed by the present invention is not limited to this embodiment, but also includes any variations, substitutions and other implementation methods that can be easily conceived by those skilled in the art within the scope of the technology disclosed in the present invention.

Claims

1. A high-isolation substrate integrated waveguide filter jumper, characterized in that, It includes a first metal layer (1), a first dielectric substrate (2), and a second metal layer (3); the first metal layer (1), the first dielectric substrate (2), and the second metal layer (3) are stacked sequentially from top to bottom, and each of them has multiple metallized vias. The metallized vias penetrate the first dielectric substrate (2) in a vertical direction and together with the first metal layer (1) and the second metal layer (3) form a substrate integrated waveguide structure. The metallized vias enclose and form four substrate integrated waveguide resonant cavities: a first substrate integrated waveguide resonant cavity (8), a second substrate integrated waveguide resonant cavity (9), a third substrate integrated waveguide resonant cavity (10), and a fourth substrate integrated waveguide resonant cavity (11). It also includes a first coplanar waveguide resonator (12) disposed on the first metal layer (1) and a second coplanar waveguide resonator (13) disposed on the second metal layer (3). The ends of the two coplanar waveguide resonators are embedded inside the corresponding substrate integrated waveguide resonator cavity, and the two are orthogonally placed. The filter jumper has two intersecting filter channels, each of which consists of two substrate integrated waveguide resonators and a coplanar waveguide resonator forming a third-order Chebyshev filter response.

2. The high-isolation substrate integrated waveguide filter jumper according to claim 1, characterized in that, The first substrate integrated waveguide resonator (8), the second substrate integrated waveguide resonator (9), the third substrate integrated waveguide resonator (10) and the fourth substrate integrated waveguide resonator (11) all operate in TE101 mode; the first coplanar waveguide resonator (12) and the second coplanar waveguide resonator (13) both operate in full-wavelength resonant mode.

3. The high-isolation substrate integrated waveguide filter jumper according to claim 1, characterized in that, The filter jumper also includes four microstrip lines: a first microstrip line (4), a second microstrip line (5), a third microstrip line (6), and a fourth microstrip line (7), which serve as four input and output ports; all four microstrip lines are disposed on the first metal layer (1); The first filter channel is input from the first microstrip line (4), sequentially coupled to the first coplanar waveguide resonator (12) through the first substrate integrated waveguide resonator (8), then coupled to the third substrate integrated waveguide resonator (10), and finally output from the third microstrip line (6).

4. The high-isolation substrate integrated waveguide filter jumper according to claim 3, characterized in that, The second filter channel is input from the second microstrip line (5), sequentially coupled to the second coplanar waveguide resonator (13) via the second substrate integrated waveguide resonator (9), then coupled to the fourth substrate integrated waveguide resonator (11), and finally output from the fourth microstrip line (7).

5. The high-isolation substrate integrated waveguide filter jumper according to claim 1, characterized in that, The four substrate integrated waveguide resonators are arranged in a 2×2 matrix; the first substrate integrated waveguide resonator (8), the second substrate integrated waveguide resonator (9), the third substrate integrated waveguide resonator (10) and the fourth substrate integrated waveguide resonator (11) are all the same size; the first coplanar waveguide resonator (12) and the second coplanar waveguide resonator (13) are all the same size.

6. The high-isolation substrate integrated waveguide filter jumper according to claim 1, characterized in that, The first dielectric substrate (2) is made of Rogers 5880 substrate; The first metal layer (1) and the second metal layer (3) are both made of copper.

7. The high-isolation substrate integrated waveguide filter jumper according to claim 1, characterized in that, The ends of the first coplanar waveguide resonator (12) are respectively embedded inside the first substrate integrated waveguide resonator (8) and the third substrate integrated waveguide resonator (10); the ends of the second coplanar waveguide resonator (13) are respectively embedded inside the second substrate integrated waveguide resonator (9) and the fourth substrate integrated waveguide resonator (11); The first filtering channel is composed of the first substrate integrated waveguide resonant cavity (8), the third substrate integrated waveguide resonant cavity (10), and the first coplanar waveguide resonator (12); The second filtering channel is composed of the second substrate integrated waveguide resonator (9), the fourth substrate integrated waveguide resonator (11), and the second coplanar waveguide resonator (13).

8. The high-isolation substrate integrated waveguide filter jumper according to claim 1, characterized in that, The center-to-center spacing between two adjacent metallized vias is 0.7~0.8mm.

9. A method for manufacturing a high-isolation substrate integrated waveguide filter jumper, characterized in that, Includes the following steps: A first dielectric substrate (2) is provided; A first metal layer (1) is formed on the upper surface of the first dielectric substrate (2), and a second metal layer (3) is formed on the lower surface of the first dielectric substrate (2). Multiple vertically penetrating metallized vias are formed on the first metal layer (1), the first dielectric substrate (2), and the second metal layer (3), so that the metallized vias together with the first metal layer (1) and the second metal layer (3) constitute a substrate integrated waveguide structure; Four ports, namely a first microstrip line (4), a second microstrip line (5), a third microstrip line (6), and a fourth microstrip line (7), and a first coplanar waveguide resonator (12), are formed on the first metal layer (1); a second coplanar waveguide resonator (13) is formed on the second metal layer (3). The first substrate integrated waveguide resonant cavity (8), the second substrate integrated waveguide resonant cavity (9), the third substrate integrated waveguide resonant cavity (10), and the fourth substrate integrated waveguide resonant cavity (11) are formed by enclosing the metallized vias. The ends of the two coplanar waveguide resonators are embedded into the corresponding substrate integrated waveguide resonant cavities to achieve coupling. The first coplanar waveguide resonator (12) and the second coplanar waveguide resonator (13) are placed orthogonally to form two intersecting filter channels. Each filter channel forms a third-order Chebyshev filter response, resulting in a high-isolation substrate integrated waveguide filter jumper.

10. A method for manufacturing a high-isolation substrate integrated waveguide filter jumper according to claim 9, characterized in that, The first substrate integrated waveguide resonator (8), the second substrate integrated waveguide resonator (9), the third substrate integrated waveguide resonator (10) and the fourth substrate integrated waveguide resonator (11) are all set to work in TE101 mode, and the first coplanar waveguide resonator (12) and the second coplanar waveguide resonator (13) are both set to work in full-wavelength resonant mode. The first filter channel is input by the first microstrip line (4), sequentially coupled to the first coplanar waveguide resonator (12) through the first substrate integrated waveguide resonator (8), then coupled to the third substrate integrated waveguide resonator (10), and finally output by the third microstrip line (6); The second filter channel is input from the second microstrip line (5), sequentially coupled to the second coplanar waveguide resonator (13) via the second substrate integrated waveguide resonator (9), then coupled to the fourth substrate integrated waveguide resonator (11), and finally output from the fourth microstrip line (7).

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