A millimeter wave waveguide-microstrip hybrid power divider
Patent Information
- Application Number
- CN202611156011.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-07-31
- Publication Date
- 2026-10-30
AI Technical Summary
这种将过渡和功分结构分开设置的方式,导致电路尺寸较大,不利于小型化发展
1、高度一体化,极致小型化:本发明将波导-微带过渡结构、两路功率分配结构、隔离匹配结构集成于单块介质基板上部,取消分体式过渡+功分两级串联架构,省去两段传输线连接空间;无需基板底部背短金属结构,仅单面光刻加工,纵向、横向尺寸同步缩减,解决传统方案模块臃肿问题,适配毫米波相控阵高密度阵列排布。相比传统双探针一体化功分,省去基板底部背短空间,整体体积降低40%以上。
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Figure CN123018390A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of microwave-millimeter wave communication technology, and more specifically to the field of millimeter wave waveguide-microstrip hybrid power distribution combiner technology. Background Technology
[0002] In modern microwave and millimeter-wave communication systems, power dividers / combiners, as core passive devices for signal power combining and distribution, are widely used in phased array radar, satellite communication, 5G / 6G mobile communication, and wireless power transfer. As operating frequency bands expand to higher frequencies, systems place higher demands on power dividers regarding insertion loss, power capacity, amplitude-phase consistency, and integration level. Traditional single transmission line structures struggle to meet these requirements simultaneously; therefore, hybrid structures based on different transmission line characteristics have gradually become a research hotspot.
[0003] The core function of a power divider / combiner is to distribute input signals to multiple output ports in a specific ratio, or conversely, to combine multiple signals into one. Early power dividers mostly used coaxial lines, microstrip lines, or stripline structures, with the Wilkinson power divider becoming a classic solution due to its simple structure and high isolation. However, as operating frequencies entered the millimeter-wave band, the limitations of traditional transmission lines became increasingly apparent. While microstrip lines facilitate planar integration, they significantly increase conductor and dielectric losses, leading to deterioration in insertion loss. Waveguide structures, although offering advantages in low loss and high power capacity, suffer from a large size, are difficult to fabricate, and are incompatible with existing planar circuits due to their three-dimensional structure.
[0004] Waveguides and microstrip lines exhibit complementary characteristics in terms of physical mechanisms and application scenarios. Waveguides transmit electromagnetic waves using air or low-loss dielectrics, possessing extremely low loss and high power capacity. Their excellent shielding performance virtually eliminates electromagnetic leakage issues, making them particularly suitable for high-power millimeter-wave transmission scenarios. However, the transmission cross-sectional area of waveguides is positively correlated with the operating wavelength, easily leading to bulky structures in array systems. Furthermore, waveguides require high processing precision and are costly, and their integration with planar circuits (such as probes and fin transitions) is complex. In contrast, microstrip lines, with their planar structure, have become the mainstream transmission line. The conductor strips and ground planes on the upper and lower surfaces of their dielectric substrates can be mass-produced using photolithography, resulting in low cost and easy integration with other active / passive devices, making them suitable for multi-chip modules and system-on-a-chip designs. Moreover, microstrip lines are much smaller than waveguides, facilitating miniaturization. However, in the millimeter-wave band, the dielectric loss of the dielectric substrate is limited by the skin effect loss due to the surface roughness of the conductor, significantly increasing the insertion loss of microstrip lines.
[0005] Therefore, a transition structure that integrates the advantages of waveguides and microstrip lines has become a key technological path for balancing performance and integration. In addition, in millimeter-wave components, a common transition structure is a waveguide transition to a microstrip output. When using a power divider, the transition is usually from a waveguide to a microstrip circuit first, followed by power division via the microstrip power divider. This separate approach to the transition and power division results in a large circuit size, hindering miniaturization. Although some researchers have proposed solutions combining transition and power division functions, existing solutions still suffer from problems such as large size, the need for short back space at the bottom of the substrate, and complex isolation structures. Therefore, there is an urgent need for a structure that can simultaneously achieve transition and power division functions to promote the miniaturization of millimeter-wave systems. Summary of the Invention
[0006] The purpose of this invention is to provide a millimeter-wave waveguide-microstrip hybrid power distribution combiner in order to solve the above-mentioned technical problems.
[0007] To achieve the above objectives, the present invention specifically adopts the following technical solution: This invention provides a millimeter-wave waveguide-microstrip hybrid power divider combiner, comprising a non-standard flat rectangular waveguide, a dielectric substrate, printed metal patterns, and an isolation load; A non-standard flat rectangular waveguide is vertically attached to the upper surface of a dielectric substrate. The non-standard flat rectangular waveguide includes a flat rectangular waveguide body, a waveguide input port, and a stepped structure. The waveguide input port is located at the end of the flat rectangular waveguide body, and the stepped structure is located inside the flat rectangular waveguide body. The stepped structure bends the electromagnetic wave transmission direction to a direction perpendicular to the dielectric substrate. A metal pattern is printed on a dielectric substrate. The metal pattern includes a metal window, a first microstrip transmission line, a second microstrip transmission line, an isolation port, and a matching microstrip. The metal window is located in the bonding area between the non-standard flat rectangular waveguide and the dielectric substrate. The metal window branches out symmetrically along the electromagnetic wave propagation direction into a first microstrip transmission line and a second microstrip transmission line as two output ports. An extension line of the metal window is provided perpendicular to the two microstrip transmission lines, forming a T-shaped branch. The isolation port is located at the end of the T-shaped branch. The isolation port is connected in series with the matching microstrip, and the isolation load is connected to the end of the matching microstrip. The dielectric substrate has an array of metal pillars arranged on both sides of the first microstrip transmission line and the second microstrip transmission line, as well as on both sides of the isolation branch. The metal pillars penetrate the upper and lower surfaces of the dielectric substrate. The dielectric substrate has independent microstrip transmission line air cavities and isolation port air cavities. The microstrip transmission line air cavities are used to cover the first microstrip transmission line and the second microstrip transmission line, and the isolation port air cavities are used to cover the T-shaped branch, the isolation port, the matching microstrip, and the isolation load.
[0008] In one embodiment, the non-standard flat rectangular waveguide is a reduced-height flat waveguide, the wide side of which is perpendicular to the plane of the dielectric substrate, and the height of the non-standard flat rectangular waveguide is less than the height of the standard rectangular waveguide.
[0009] In one embodiment, the stepped structure is a multi-level impedance gradient step, which gradually reduces the vertical cross-sectional height of the non-standard flat rectangular waveguide, and smoothly transitions the air field of the non-standard flat rectangular waveguide to the microstrip field of the dielectric substrate.
[0010] In one embodiment, the metal pillars in the metal pillar array are arranged linearly at equal intervals, and the center-to-center distance between two adjacent metal pillars is less than 1 / 4 of the dielectric wavelength of the device operating frequency band. Each metal pillar is equivalent to a closed metal shielding wall to constrain the electromagnetic wave transmission path.
[0011] In one implementation, the isolation load is grounded to block and absorb the reflected radio frequency energy generated by port mismatch and guide it to ground.
[0012] In one implementation, the isolation terminal is impedance matched to a 50Ω isolation load via a matched microstrip line.
[0013] In one embodiment, the size of the metal window is smaller than the cross-sectional size of the non-standard flat rectangular waveguide, and a capacitive skirt is provided at the edge of the metal window. The capacitive skirt of the metal window extends outward to compensate for the impedance difference between the waveguide and the microstrip transmission line and reduce the transition insertion loss.
[0014] In one embodiment, the device operates in a frequency band covering 26.3 GHz to 31.84 GHz, with an input port return loss ≤ -20 dB and an output port isolation ≥ 15 dB.
[0015] In one embodiment, the microstrip transmission line air cavity and the isolation port air cavity are separate independent metal cavities, with the cavity sidewalls connected to the metal through-pillar array to form a complete electromagnetic shielding space.
[0016] In one implementation, it can be used in reverse as a power combiner, specifically as follows: the first microstrip transmission line and the second microstrip transmission line serve as RF input ports, and the waveguide input port serves as a single-channel power combining output port.
[0017] The beneficial effects of this invention are as follows: 1. Highly integrated and extremely miniaturized: This invention integrates the waveguide-microstrip transition structure, two-way power distribution structure, and isolation matching structure onto a single dielectric substrate, eliminating the need for a separate transition and power divider two-stage series architecture, saving space for connecting two transmission lines; it eliminates the need for a short metal structure at the bottom of the substrate, requiring only single-sided photolithography processing, resulting in simultaneous reduction of both vertical and horizontal dimensions, solving the problem of bulky modules in traditional solutions, and adapting to high-density millimeter-wave phased array arrangements. Compared to traditional dual-probe integrated power dividers, it eliminates the space at the bottom of the substrate, reducing the overall volume by more than 40%.
[0018] 2. Low insertion loss and wideband impedance matching: The flat waveguide low-loss air transmission path, combined with the metal window capacitive skirt and multi-stage stepped structure, achieves a smooth impedance transformation from waveguide to microstrip, eliminating the additional reflection loss caused by two-stage cascading; the metal through-pillar array is equivalent to a complete metal shielding wall, suppressing electromagnetic wave lateral radiation leakage and significantly reducing radiation loss; the device's input return loss is stable at around 20dB across the entire frequency band of 26.3~31.84GHz, and the transmission loss is much lower than that of a pure microstrip power divider.
[0019] 3. T-shaped independent isolation branch with excellent isolation performance: The isolation branch forms a T-shaped topology with two output microstrips perpendicular to the center line of the metal window. Mismatch reflection energy is guided by the metal column and coupled to the isolation port. After impedance transformation by the matched microstrip, it is completely absorbed by the grounded isolation load. The isolation of the output port is consistently greater than 15dB in the 25~31.33GHz frequency band, and the signal crosstalk between the two output channels is weak, ensuring the amplitude and phase consistency of the multi-channel phased array radar.
[0020] 4. Simple processing and assembly, low mass production cost: The dielectric substrate is printed with metal patterns on only one side, and the photolithography process is formed in one step; the flat waveguide, air cavity and dielectric substrate are assembled separately, and the metal through pillars can be mass-produced using standard PCB copper plating process; the isolation load adopts a 50Ω standard load, and no custom components are required; the overall number of parts is less than that of traditional split structures, and the assembly process is reduced by 50%, which is suitable for large-scale mass production.
[0021] 5. Strong compatibility with planar integration: The two output ports are standard microstrip transmission lines, which can be directly bonded or surface-mounted to planar RF devices such as millimeter-wave chips, microstrip filters, and phase shifters without additional structural conversion, expanding the application scenarios of the device in multi-chip components and on-chip RF systems.
[0022] 6. High power capacity and excellent shielding performance: The input side adopts a flat rectangular air waveguide to transmit the main power, with no dielectric loss and a power tolerance far higher than that of a pure microstrip power divider; the separate independent air cavity fully encloses the microstrip circuit, and with the metal through-pillar shielding array, electromagnetic leakage is negligible, making it suitable for millimeter-wave high-power transmission synthesis networks. Attached Figure Description
[0023] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained from these drawings without creative effort.
[0024] Figure 1 This is a schematic diagram of the overall three-dimensional assembly structure of the present invention.
[0025] Figure 2 This is a schematic diagram of the exploded decomposition structure of the present invention.
[0026] Figure 3 This is a schematic diagram of the combination of the dielectric substrate and the upper metal layer of the present invention.
[0027] Figure 4 This is a top view of the upper metal layer of the dielectric substrate of the present invention.
[0028] Figure 5 The S-parameter simulation curves for this invention (input return loss, two-channel output transmission coefficients).
[0029] Figure 6 The simulation curves for isolation and standing wave ratio at each port of this invention are shown.
[0030] Reference numerals: 1. Non-standard flat rectangular waveguide; 2. Waveguide port; 3. First microstrip transmission line; 4. Second microstrip transmission line; 5. Metal window; 6. Isolation port; 7. Matching microstrip; 8. Isolation load; 9. Metal through-pillar; 10. Stepped structure; 11. Dielectric substrate; 12. Microstrip transmission line air cavity; 13. Isolation port air cavity. Detailed Implementation
[0031] To make the technical problems, technical solutions, and technical effects of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.
[0032] Therefore, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the invention without inventive effort are within the scope of protection of the invention.
[0033] It should be noted that similar reference numerals and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. Furthermore, the terms "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.
[0034] In the description of the embodiments of the present invention, it should be noted that the terms "inner", "outer", "upper", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship in which the product of the invention is usually placed when in use. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting the present invention.
[0035] Example 1 like Figure 1 and Figure 2 As shown, this embodiment provides a millimeter-wave waveguide-microstrip hybrid power distribution combiner, including a non-standard flat rectangular waveguide 1, a waveguide port 2, a first microstrip transmission line 3, a second microstrip transmission line 4, a metal window 5, an isolation port 6, a matching microstrip 7, an isolation load 8, a metal through-pillar 9, a stepped structure 10, a dielectric substrate 11, a microstrip transmission line air cavity 12, and an isolation port air cavity 13.
[0036] The non-standard flat rectangular waveguide 1 is a reduced-height flat waveguide, with its wide side perpendicular to the dielectric substrate 11. Compared to traditional rectangular waveguides, the reduced-height flat waveguide significantly reduces the waveguide's height while maintaining good transmission performance, which is beneficial for miniaturization of the overall structure. A waveguide port 2 is located at one end of the flat waveguide for inputting radio frequency signals. A stepped structure 10 is provided inside the waveguide. This stepped structure 10 is used to achieve impedance matching and mode conversion between the waveguide transmission mode and the dielectric substrate 11 transmission mode, enabling energy input from the waveguide port to be transmitted to the dielectric substrate 11 with low reflection loss.
[0037] The dielectric substrate 11 is disposed below the non-standard flat rectangular waveguide 1, perpendicular to the wide side of the non-standard flat rectangular waveguide 1. The upper metal layer of the dielectric substrate 11 is composed of metal microstrip lines 13 and 24, a metal window 5, an isolation port 6, and a matching circuit 7. The metal window 5 is formed at the contact position between the waveguide cavity and the dielectric substrate 11, and the size of the metal window 5 is slightly smaller than the size of the flat waveguide opening. By setting the size of the metal window 5 to be slightly smaller than the size of the waveguide opening, a capacitive skirt effect can be formed, effectively reducing the insertion loss in the process of energy coupling from the waveguide to the dielectric substrate 11, and improving the transmission efficiency of the power divider.
[0038] like Figure 3 and Figure 4As shown, the first microstrip transmission line 3 and the second microstrip transmission line 4 are disposed in the upper metal layer of the dielectric substrate 11, and are arranged symmetrically to form two output branches. A microstrip air cavity 12 is disposed above the first microstrip transmission line 3 and the second microstrip transmission line 4. The air cavity allows the microstrip line to operate in a suspended microstrip or similar state, reducing the confinement and loss of the electromagnetic field by the dielectric substrate 11, further reducing insertion loss, and improving the transmission performance of the power divider in the millimeter-wave band. The inner ends of the two microstrip transmission lines extend towards the metal window 5, and the outer ends extend to the edge of the dielectric substrate 11 as output ports, facilitating direct connection with external planar circuits.
[0039] In the dielectric substrate 11, a series of metal pillars 9 are arranged on both sides of the first microstrip transmission line 3 and the second microstrip transmission line 4 along the electromagnetic field transmission direction. These metal pillars 9 penetrate between the upper metal layer and the lower ground metal layer of the dielectric substrate 11, and are equivalent to metal walls in terms of electromagnetic performance. The equivalent metal walls of the metal pillars serve to confine electromagnetic energy to the vicinity of the microstrip transmission line and transmit it in a specified direction, preventing energy leakage or radiation to other areas of the dielectric substrate 11, thereby improving transmission efficiency and isolation between ports.
[0040] The isolation port 6 is located along the extension line of the metal window 5, perpendicular to the straight line containing the two microstrip arms, forming a T-shaped structure with the first microstrip transmission line 3 and the second microstrip transmission line 4. An isolation port air cavity 13 is located above the isolation port 6, separated from the microstrip line air cavity 12. The isolation port 6 is also composed of microstrip lines, with its inner end facing the metal window 5 and its outer end connected to the isolation load 8 via a matching microstrip 7. The isolation load 8 is grounded. Metal post 9 is also located in the dielectric region where the isolation port 6 is located. These metal post 9 are used to guide and couple the reflected energy to the isolation branch when the first microstrip transmission line 3 or the second microstrip transmission line 4 port mismatches, and then conduct it to ground through the isolation load 8, thereby preventing the reflected energy from affecting the normal operation of the other output port.
[0041] The working principle of the power divider / combiner of this invention is as follows: Radio frequency (RF) signals are input to the non-standard flat rectangular waveguide 1 from waveguide port 2, and are transmitted in the waveguide in TE10 mode or the corresponding dominant mode. When the electromagnetic wave propagates to the stepped structure 10, the stepped structure 10 converts the waveguide transmission mode to the dielectric substrate 11 transmission mode, changing the energy transmission direction to be perpendicular to the dielectric substrate 11. The converted electromagnetic energy is coupled from the waveguide cavity into the dielectric substrate 11 through the metal window 5. Since the size of the metal window 5 is slightly smaller than the size of the waveguide port, its capacitive skirt effect can effectively reduce energy reflection and loss during the coupling process.
[0042] Electromagnetic energy entering the dielectric substrate 11 is transmitted along the arrangement direction of the metal pillars 9 between the first microstrip transmission line 3 and the second microstrip transmission line 4. The metal pillars 9 are equivalent to metal walls, confining the electromagnetic energy within the transmission channel defined by the two microstrip lines and the metal pillars, preventing energy leakage to both sides. When the electromagnetic energy propagates to the bifurcation point of the two microstrip transmission lines, it is evenly split into left and right signals, which are coupled to the first microstrip transmission line 3 and the second microstrip transmission line 4 respectively. Finally, radio frequency signals are output through the output ports of the two microstrip lines, thus realizing the power distribution function from one input to two outputs.
[0043] When the power divider is used as a combiner in reverse, the two radio frequency signals are input from the ports of the first microstrip transmission line 3 and the second microstrip transmission line 4, respectively. They are transmitted in opposite directions along the transmission channel defined by the metal through post 9 in the dielectric substrate 11, and after merging at the position of the metal window 5, they are output through the waveguide port 2 to realize the power combination of the two signals.
[0044] The working principle of isolation port 6 is as follows: Isolation port 6 forms a T-shaped structure with the two microstrip transmission lines. When the output port of the first microstrip transmission line 3 or the second microstrip transmission line 4 experiences reflection due to load mismatch, the reflected energy will not directly affect the other output port. The reflected energy is transmitted to isolation port 6 along the guiding path of the metal post 9 in the dielectric substrate 11. After impedance matching by the matching microstrip 7, it is absorbed by the isolation load 8 and grounded. This T-shaped microstrip isolation structure effectively absorbs the reflected energy caused by port mismatch, significantly improving the isolation between the two output ports.
[0045] like Figure 5 and Figure 6 The image shows the simulation results of the waveguide-microstrip hybrid power divider of this invention. From... Figure 5 The S-parameter simulation curves show that, within the frequency range of 26.3 GHz to 31.84 GHz, the return loss S11 of the input port reaches approximately 20 dB, indicating that the input port has good impedance matching characteristics and minimal energy reflection. Figure 6 The simulation curves show that the output port isolation is greater than 15dB in the frequency range of 25GHz to 31.33GHz, indicating good mutual isolation performance between the two output ports, and the signal from one port will not interfere with the other. The output port VSWR is greater than 15dB in the frequency range of 26.85GHz to 30.9GHz, indicating that the output ports also have good matching characteristics. The above simulation results fully verify the excellent performance of the power divider / combiner of this invention in the millimeter-wave band.
[0046] The millimeter-wave waveguide-microstrip hybrid power divider and combiner of this invention can be implemented using conventional PCB and metal processing techniques. The dielectric substrate 11 can be made of Rogers 5880, Rogers 4350, or other low-loss, high-frequency materials suitable for the millimeter-wave band. The metal through-pillar 9 can be achieved by drilling holes in the dielectric substrate 11 and electroplating metallization. The non-standard flat rectangular waveguide 1 can be manufactured using CNC milling or precision casting. Assembly between components can be achieved using screw fixing, welding, or conductive adhesive bonding. The overall structure is compact, the manufacturing process is mature, and the cost is controllable, demonstrating good engineering practical value.
Claims
1. A millimeter-wave waveguide-microstrip hybrid power divider combiner, characterized in that, This includes non-standard flat rectangular waveguides, dielectric substrates, printed metal patterns, and isolation loads; The non-standard flat rectangular waveguide is perpendicularly attached to the upper surface of the dielectric substrate. The non-standard flat rectangular waveguide includes a flat rectangular waveguide body, a waveguide input port, and a stepped structure. The waveguide input port is located at the end of the flat rectangular waveguide body, and the stepped structure is located within the flat rectangular waveguide body. The stepped structure bends the electromagnetic wave transmission direction to a direction perpendicular to the dielectric substrate. The metal pattern is printed on the dielectric substrate. The metal pattern includes a metal window, a first microstrip transmission line, a second microstrip transmission line, an isolation port, and a matching microstrip. The metal window is located in the bonding area between the non-standard flat rectangular waveguide and the dielectric substrate. The metal window branches out symmetrically along the electromagnetic wave transmission direction into a first microstrip transmission line and a second microstrip transmission line as two output ports. The extension line of the metal window is perpendicular to the two microstrip transmission lines, forming a T-shaped branch. The isolation port is located at the end of the T-shaped branch. The isolation port is connected in series with the matching microstrip, and the isolation load is connected to the end of the matching microstrip. The dielectric substrate has an array of metal pillars arranged on both sides of the first microstrip transmission line and the second microstrip transmission line, as well as on both sides of the isolation branch. The metal pillars penetrate the upper and lower surfaces of the dielectric substrate. The dielectric substrate is provided with independent microstrip transmission line air cavities and isolation port air cavities. The microstrip transmission line air cavity is used to cover the first microstrip transmission line and the second microstrip transmission line, and the isolation port air cavity is used to cover the T-shaped branch, the isolation port, the matching microstrip, and the isolation load.
2. The millimeter-wave waveguide-microstrip hybrid power divider and combiner according to claim 1, characterized in that, The non-standard flat rectangular waveguide is a reduced-height flat waveguide, the wide side of which is perpendicular to the plane of the dielectric substrate, and the height of the non-standard flat rectangular waveguide is less than the height of the standard rectangular waveguide.
3. The millimeter-wave waveguide-microstrip hybrid power divider and combiner according to claim 1, characterized in that, The stepped structure is a multi-level impedance gradient step, which gradually reduces the vertical cross-sectional height of the non-standard flat rectangular waveguide, and smoothly transitions the air field of the non-standard flat rectangular waveguide to the microstrip field of the dielectric substrate.
4. The millimeter-wave waveguide-microstrip hybrid power divider and combiner according to claim 1, characterized in that, The metal pillars in the metal pillar array are arranged linearly at equal intervals. The center-to-center distance between two adjacent metal pillars is less than 1 / 4 of the dielectric wavelength of the device operating frequency band. Each metal pillar is equivalent to a closed metal shielding wall that constrains the electromagnetic wave transmission path.
5. The millimeter-wave waveguide-microstrip hybrid power divider and combiner according to claim 1, characterized in that, The isolation load, through grounding, blocks and absorbs the reflected radio frequency energy generated by port mismatch and guides it to ground, thus absorbing the reflected radio frequency energy generated by port mismatch.
6. The millimeter-wave waveguide-microstrip hybrid power divider and combiner according to claim 1, characterized in that, The isolation terminal is impedance matched to the 50Ω isolation load via a matched microstrip line.
7. The millimeter-wave waveguide-microstrip hybrid power divider and combiner according to claim 1, characterized in that, The size of the metal window is smaller than the cross-sectional size of the non-standard flat rectangular waveguide. A capacitive skirt is provided at the edge of the metal window, and the capacitive skirt of the metal window extends outward to compensate for the impedance difference between the waveguide and the microstrip transmission line and reduce the transition insertion loss.
8. The millimeter-wave waveguide-microstrip hybrid power divider and combiner according to claim 1, characterized in that, The device operates in the frequency band of 26.3GHz to 31.84GHz, with input port return loss ≤-20dB and output port isolation ≥15dB.
9. The millimeter-wave waveguide-microstrip hybrid power divider and combiner according to claim 1, characterized in that, The microstrip transmission line air cavity and the isolation port air cavity are separate independent metal cavities, with the cavity sidewalls connected to the metal through-pillar array to form a complete electromagnetic shielding space.
10. The millimeter-wave waveguide-microstrip hybrid power divider and combiner according to claim 1, characterized in that, It can be used in reverse as a power combiner, as follows: the first microstrip transmission line and the second microstrip transmission line serve as radio frequency input ports, and the waveguide input port serves as a single-channel power combining output port.
