A light-emitting point height-adjustable semiconductor laser package structure

Abstract

The application relates to the technical field of semiconductor lasers, in particular to a semiconductor laser packaging structure with adjustable light-emitting point height, which comprises a semiconductor laser packaging box, a height adjusting mechanism, a cooling mechanism and a bottom anti-loosening assembly, the height adjusting mechanism comprises a ceramic substrate, four groups of fixing grooves are fixedly installed at the bottom of the ceramic substrate, warped bimetallic arc plates are insertedly installed between two groups of the fixing grooves, the warped bimetallic arc plates comprise manganese-nickel-copper alloy arc plates and invar alloy arc plates, and connecting bridge seats are fixedly connected between the two groups of the warped bimetallic arc plates. Through the height adjusting mechanism, a double height adjusting mechanism of'manual positioning before packaging + thermal compensation during work' is realized, the light-emitting point deviation caused by thermal expansion and cold shrinkage of a laser chip and the packaging structure is dynamically offset, the light-emitting point height is always stable under different power and different temperature working conditions, the optical fiber coupling efficiency and the light spot consistency are remarkably improved, and the service life of the device is prolonged.

Description

Technical Field

[0001] This invention relates to the field of semiconductor laser technology, and more particularly to a semiconductor laser packaging structure with adjustable emission point height. Background Technology

[0002] Semiconductor lasers, with their advantages of high photoelectric conversion efficiency, fast response speed, and good beam concentration, are widely used in fields such as fiber optic communication, precision laser processing, medical aesthetics, optical detection, and laser array imaging.

[0003] While existing semiconductor laser packaging structures can calibrate and position the initial emission point by adjusting the height of the chip mounting base, the laser chip continuously generates a large amount of heat during long-term operation, causing the overall package temperature to rise. Due to the differences in the thermal expansion coefficients of the materials in the multi-level structure, each component undergoes differentiated thermal expansion deformation, resulting in a vertical height shift of the core emission points, such as the PN junction emission area and the emission surface. This displacement defect directly leads to problems such as decreased fiber coupling matching, poor consistency of laser array spot arrangement, and system optical path collimation failure, significantly reducing the device's photoelectric output stability, accelerating the aging and wear of internal components, and ultimately shortening the overall lifespan of the semiconductor laser.

[0004] To address the aforementioned issues, we propose a semiconductor laser packaging structure with adjustable emission point height. Summary of the Invention

[0005] The purpose of this invention is to address the shortcomings of existing technologies by proposing a semiconductor laser packaging structure with adjustable light emission point height.

[0006] To achieve the above objectives, the present invention adopts the following technical solution:

[0007] A semiconductor laser packaging structure with adjustable light emission point height includes a semiconductor laser packaging box, a height adjustment mechanism, a cooling mechanism, and a bottom anti-loosening component. The height adjustment mechanism includes a ceramic substrate, with four sets of fixing slots fixedly installed at the bottom of the ceramic substrate. A warped bimetallic arc plate is inserted between two sets of fixing slots. The warped bimetallic arc plate includes a manganese-nickel-copper alloy arc plate and an Invar alloy arc plate. A connecting bridge is fixedly connected between two sets of warped bimetallic arc plates. A central column is fixedly installed at the bottom center of the connecting bridge. A threaded adjustment column is provided on the lower side of the central column. The cooling mechanism includes an air inlet pipe and an air outlet pipe. The bottom anti-loosening component is located at the bottom of the semiconductor laser packaging box.

[0008] Furthermore, several semiconductor cooling chips are fixedly attached to the side wall of the air inlet duct, and a bent pipe is provided in the gap between adjacent semiconductor cooling chips. The inner end of the bent pipe passes through to the inner side of the air inlet duct, and the outer ends of several bent pipes are connected and fixedly installed with a ring pipe. Several arc-shaped cooling air ducts are fixedly installed on the side wall of the ring pipe, and the bent pipe is fixedly connected to the side wall of the air inlet duct.

[0009] Furthermore, the bottom anti-loosening component includes a rubber sleeve with a hexagonal protrusion on the upper side and a permanent magnet block embedded in the inner side of the rubber sleeve.

[0010] Furthermore, mounting side seats are fixedly installed on both sides of the bottom of the semiconductor laser package box, a sealing cover plate is screwed onto the top of the semiconductor laser package box, an insulating electrode seat is fixedly installed on the side wall of the semiconductor laser package box, electrodes are symmetrically inserted into the inner side of the insulating electrode seat, and a bottom circular hole is opened at the bottom of the semiconductor laser package box.

[0011] Furthermore, a light-emitting tube is fixedly installed at the end of the semiconductor laser package box, a light-transmitting lens is fixedly installed inside the light-emitting tube, inclined side supports are symmetrically arranged on both sides of the inner end of the light-emitting tube, the inclined side supports are fixedly installed on the bottom inner side of the semiconductor laser package box, a focusing lens is fixedly installed on the inclined side supports, a temperature sensor is fixedly installed on the inner wall of the semiconductor laser package box, and a microcontroller is fixedly installed on the bottom inner side of the semiconductor laser package box.

[0012] Furthermore, a mounting groove is formed on the ceramic substrate, and a laser chip is disposed on the mounting groove. A long strip metal base and an L-shaped metal base are fixedly mounted on the upper side of the ceramic substrate. The pins on both sides of the laser chip are respectively soldered to the upper side of the long strip metal base and the L-shaped metal base. The ends of the long strip metal base and the L-shaped metal base are electrically connected to conductive copper wires, and the other ends of the conductive copper wires are respectively connected to the inner end of the electrode.

[0013] Furthermore, guide telescopic cylinders are fixedly installed at the four corners of the bottom of the ceramic substrate. The bottom of the guide telescopic cylinders is fixedly installed at the bottom of the semiconductor laser package box. Positioning screws are screwed onto the side wall of the fixing groove. A threaded hole is opened in the center of the central column seat. The upper end of the threaded adjusting column is screwed into the inner side of the threaded hole. The threaded adjusting column is rotatably installed at the bottom of the semiconductor laser package box. A nut is fixedly connected to the bottom end of the threaded adjusting column. The nut rotates through to the inner side of the bottom circular hole. A hexagonal concave hole is opened at the center of the nut.

[0014] Furthermore, the air inlet pipe and the air outlet pipe are symmetrically and fixedly installed on the side wall of the semiconductor laser package box. The inner ends of the air inlet pipe and the air outlet pipe pass through to the inside of the semiconductor laser package box. Both the inner ends of the air inlet pipe and the air outlet pipe are fixedly installed with flared conical openings. Several air holes are provided on the inner side of the flared conical openings. A fan is fixedly installed at the outer port of the air outlet pipe. Dustproof sleeves are screwed onto the ends of the fan and the air inlet pipe. The two flared conical openings are symmetrically and obliquely arranged on both sides above the ceramic substrate.

[0015] Furthermore, the outer ends of both the air inlet pipe and the air outlet pipe are curved downwards, and the inner end of the curved pipe is provided with a flared air inlet. The flared air inlet is inclined downwards, and the arc-shaped cooling air pipe is inclined upwards. A dust cap is fitted at the port of the arc-shaped cooling air pipe.

[0016] Furthermore, the rubber sleeve is inserted into the inner side of the bottom circular hole, the hexagonal protrusion is inserted into the inner side of the hexagonal concave hole, the bottom of the rubber sleeve has a prying inner hole, and the side wall of the rubber sleeve is evenly provided with anti-slip grooves.

[0017] Compared with related technologies, the semiconductor laser packaging structure with adjustable emission point height proposed in this invention has the following advantages:

[0018] In this invention, a semiconductor laser packaging structure with adjustable light-emitting point height is described. Through a height adjustment mechanism, a dual height adjustment mechanism of "manual positioning before packaging + thermal compensation during operation" is achieved: during the packaging stage, the initial height of the ceramic substrate and laser chip can be manually calibrated through the bottom threaded adjustment post to achieve the initial positioning of the light-emitting point; after the device is in operation, the warped bimetallic arc plate generates differential thermal deformation as the temperature rises, causing the ceramic substrate to rise and fall in the opposite direction, dynamically offsetting the light-emitting point offset caused by thermal expansion and contraction of the laser chip and packaging structure, ensuring that the light-emitting point height remains stable under different power and temperature conditions, significantly improving fiber coupling efficiency and beam consistency, and extending the device's service life.

[0019] In this invention, a semiconductor laser packaging structure with adjustable light-emitting point height is constructed through a cooling mechanism, forming a three-stage heat dissipation system: "main air duct cooling + semiconductor cooling auxiliary + side-mounted cooling chip." The main air duct uses an inlet pipe, an outlet pipe, and a flared conical opening to perform directional convection heat dissipation on the laser chip and ceramic substrate inside the packaging box, quickly expelling heat from the core heat source. Simultaneously, the semiconductor cooling chip on the side wall of the inlet pipe pre-cools the incoming air, reducing the air temperature entering the packaging box. The arc-shaped cooling duct provides independent side-mounted cooling airflow to the semiconductor cooling chip through bends and loops, preventing the cooling chip from overheating and failing, significantly improving overall heat dissipation efficiency, and ensuring the stability of the device during continuous high-power operation.

[0020] In this invention, a semiconductor laser packaging structure with adjustable light-emitting point height achieves dual anti-loosening locking of the threaded adjustment column through a bottom anti-loosening component: the rubber sleeve and the bottom circular hole are interference-fitted, and the anti-slip groove on the side wall increases the frictional resistance, preventing the nut from rotating circumferentially due to vibration or thermal stress; the permanent magnet block inside the rubber sleeve generates magnetic pre-tightening force with the bottom of the nut, and the interlocking structure of the hexagonal protrusion and hexagonal concave hole further restricts the axial movement and radial offset of the nut, effectively solving the problems of loosening of the threaded adjustment rod and drift of adjustment height during long-term operation, and ensuring the long-term stability and reliability of the light-emitting point height adjustment. Attached Figure Description

[0021] Figure 1 This is a three-dimensional structural diagram of a semiconductor laser packaging structure with adjustable light-emitting point height proposed in this invention. Figure One ;

[0022] Figure 2 A three-dimensional structural diagram of a semiconductor laser packaging structure with adjustable light-emitting point height proposed in this invention. Figure Two ;

[0023] Figure 3 A three-dimensional structural diagram of a semiconductor laser packaging structure with adjustable light-emitting point height proposed in this invention. Figure Three ;

[0024] Figure 4 A three-dimensional disassembled structural diagram of a semiconductor laser packaging structure with adjustable light-emitting point height proposed in this invention;

[0025] Figure 5 A schematic diagram of a three-dimensional cross-sectional structure of a semiconductor laser packaging structure with adjustable light emission point height proposed in this invention. Figure One ;

[0026] Figure 6 A schematic diagram of a three-dimensional cross-sectional structure of a semiconductor laser packaging structure with adjustable light emission point height proposed in this invention. Figure Two ;

[0027] Figure 7 Schematic diagram of the three-dimensional structure of the height adjustment mechanism Figure One ;

[0028] Figure 8 Schematic diagram of the three-dimensional structure of the height adjustment mechanism Figure Two ;

[0029] Figure 9 Schematic diagram of the three-dimensional split structure of the height adjustment mechanism Figure One ;

[0030] Figure 10 Schematic diagram of the three-dimensional split structure of the height adjustment mechanismFigure Two ;

[0031] Figure 11 Schematic diagram of the three-dimensional structure of the cooling mechanism Figure One ;

[0032] Figure 12 Schematic diagram of the three-dimensional structure of the cooling mechanism Figure Two ;

[0033] Figure 13 Schematic diagram of the three-dimensional disassembled structure of the cooling mechanism Figure One ;

[0034] Figure 14 Schematic diagram of the three-dimensional disassembled structure of the cooling mechanism Figure Two ;

[0035] Figure 15 Schematic diagram of the three-dimensional disassembled structure of the cooling mechanism Figure Three ;

[0036] Figure 16 A three-dimensional structural diagram of the bottom anti-loosening component;

[0037] Figure 17 This is a three-dimensional cross-sectional diagram of the bottom anti-loosening component.

[0038] In the diagram: 1. Semiconductor laser package; 2. Mounting side seat; 3. Insulating electrode seat; 4. Electrode; 5. Height adjustment mechanism; 51. Ceramic substrate; 52. Mounting slot; 53. Laser chip; 54. Long metal seat; 55. L-shaped metal seat; 56. Conductive copper wire; 57. Fixing slot; 58. Guide telescopic cylinder; 59. Warped bimetallic arc plate; 510. Connecting bridge seat; 511. Center post seat; 512. Threaded hole; 513. Threaded adjusting post; 514. Nut; 515. Hexagonal concave hole; 6. Cooling mechanism; 61. Air inlet duct; 62. Air outlet duct; 63. Flared conical inlet; 64. Fan; 65. Dustproof cap; 66. Semiconductor cooling chip; 67. Bend; 68. Flared air inlet; 69. Ring pipe; 610. Arc-shaped cooling duct; 611. Dust cap; 7. Bottom anti-loosening component; 71. Rubber sleeve; 72. Hexagonal protrusion; 73. Pry-out inner hole; 74. Anti-slip groove; 75. Permanent magnet block; 8. Sealing cover plate; 9. Bottom round hole; 10. Light-emitting tube; 11. Light-transmitting lens; 12. Inclined side support; 13. Concentrating lens; 14. Temperature sensor; 15. Microcontroller. Detailed Implementation

[0039] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0040] First embodiment: Please refer to the following: Figures 1-10In the first embodiment of the present invention, a semiconductor laser packaging structure with adjustable light-emitting point height includes a semiconductor laser packaging box 1, a height adjustment mechanism 5, a cooling mechanism 6, and a bottom anti-loosening component 7. The height adjustment mechanism 5 includes a ceramic substrate 51, and four sets of fixing grooves 57 are fixedly installed at the bottom of the ceramic substrate 51. A warped bimetallic arc plate 59 is inserted and installed between two sets of fixing grooves 57. The warped bimetallic arc plate 59 includes a manganese nickel copper alloy arc plate and an Invar alloy arc plate. A connecting bridge 510 is fixedly connected between two sets of warped bimetallic arc plates 59. A central column seat 511 is fixedly installed at the center of the bottom of the connecting bridge seat 510. A threaded adjusting column 513 is provided on the lower side of the central column seat 511. The cooling mechanism 6 includes an air inlet pipe 61 and an air outlet pipe 62. The bottom anti-loosening component 7 is provided at the bottom of the semiconductor laser packaging box 1.

[0041] It should be noted that during the production of the warped bimetallic arc plate 59, the Mn72Cu18Ni10 manganese-nickel-copper alloy plate and the Invar alloy plate are first subjected to surface grinding, pickling and activation treatment, then stacked and spot-welded at room temperature for positioning, and placed in a vacuum hot press furnace. They are then held at a constant temperature and pressure of 750-850℃ and 8-12MPa for 2 to 4 hours, so that the two metal layers form a metallurgical bonding layer through atomic diffusion to become an integral flat plate. The entire plate is then cold-bent into an arc shape, and after low-temperature aging to relieve stress, precision machining and surface protection, an integral thermo-deformable body with an upper manganese-nickel-copper arc plate and a lower Invar alloy arc plate is finally produced. The above are common processing methods for thermosensitive bimetallic composite plates, which are existing conventional technologies and will not be elaborated here.

[0042] With the above-described configuration, the warped bimetallic arc plate 59 is the core component for achieving adaptive compensation of the light-emitting point height. It achieves adaptive deformation through the significant difference in the thermal expansion coefficients of the two materials: the thermal expansion coefficient of the upper manganese-nickel-copper alloy arc plate is much higher than that of the lower Invar alloy arc plate. When the semiconductor laser is working, the heat generated by the laser chip 53 is directly conducted to the ceramic substrate 51. The ceramic substrate 51, as a highly thermally conductive carrier, quickly transfers the heat to its bottom. Then, through the contact area between the bottom of the ceramic substrate 51 and the warped bimetallic arc plate 59 (the insertion and contact point between the fixing groove 57 and the warped bimetallic arc plate 59), and with the air conduction below the ceramic substrate 51, the heat is transferred to the warped bimetallic arc plate 59. As the temperature rises, the thermal expansion of the upper manganese-nickel-copper alloy arc plate is much greater than that of the lower Invar alloy arc plate, causing the warped bimetallic arc plate 59 to undergo adaptive deformation by bending downwards. Conversely, when the temperature decreases, the contraction of the upper manganese-nickel-copper alloy arc plate is greater than that of the lower one, and the warped bimetallic arc plate 59 rebounds upwards. This adaptive deformation, through the two ends of the warped bimetallic arc plate 59, drives the ceramic substrate 51 and the laser chip 53 above it to move in the opposite direction, precisely offsetting the vertical displacement of the light-emitting point caused by thermal expansion and contraction of the laser chip 53 and the packaging structure. At the same time, the four sets of fixing slots 57 play a positioning and installation role for the two sets of warped bimetallic arc plates 59, ensuring that the two sets of warped bimetallic arc plates 59 deform synchronously and are subjected to uniform force, avoiding the tilting of the ceramic substrate 51 and ensuring the stability of the light-emitting point of the laser chip 53. The connecting bridge 510 connects the two sets of warped bimetallic arc plates 59 into one, realizing the synchronous transmission of deformation force. The central column 511 provides installation support for the threaded adjustment column 513, realizing the linkage between "manual initial adjustment" and "thermal adaptive compensation", ultimately ensuring that the height of the light-emitting point of the laser chip 53 remains stable under different power and temperature conditions, solving the core pain point of thermal displacement in the existing packaging structure.

[0043] Regarding the alignment determination and auxiliary methods for the laser chip emitting point and the emitting tube 10 before packaging: During assembly, the staff uses conventional optical alignment and measurement tools in the existing semiconductor laser packaging field, combined with the structure of this case, to achieve precise alignment. The specific operation is as follows: First, the ceramic substrate 51 with the laser chip 53 assembled is initially installed in place. With the help of two auxiliary tools, a laser collimator and a CCD vision alignment instrument, the reference collimated beam emitted by the laser collimator is aligned with the central axis of the emitting tube 10. At the same time, the light trajectory of the emitting area of ​​the laser chip 53 is collected in real time by the CCD vision alignment instrument. The nut 514 at the bottom of the semiconductor laser packaging box 1 is adjusted to drive the threaded adjustment column 513, the central column seat 511 and the ceramic substrate 51 to rise and fall until the CCD vision alignment instrument shows that the light trajectory of the laser chip 53 is completely superimposed with the reference collimated beam, and the projection of the emitting point is accurately placed at the center of the light-transmitting lens 11. It can be determined that the emitting point is aligned with the emitting tube 10. The alignment determination method and the laser collimator and CCD vision alignment instrument used as auxiliary measurement means are all existing conventional alignment determination methods in the field of semiconductor laser packaging. Their specific operation procedures and measurement accuracy control are known to those skilled in the art.

[0044] In this method, mounting side seats 2 are fixedly installed on both sides of the bottom of the semiconductor laser package box 1, a sealing cover plate 8 is screwed onto the upper side of the semiconductor laser package box 1, an insulating electrode seat 3 is fixedly installed on the side wall of the semiconductor laser package box 1, electrodes 4 are symmetrically fixedly inserted into the inner side of the insulating electrode seat 3, and a bottom circular hole 9 is opened at the bottom of the semiconductor laser package box 1.

[0045] Through the above-described configuration, the semiconductor laser package 1 serves as the core supporting structure of the entire package, providing installation space and fixed support for all components such as the height adjustment mechanism 5, cooling mechanism 6, and bottom anti-loosening component 7. It also isolates external moisture, dust, and electromagnetic interference, ensuring the stable operation of internal components. The mounting side plate 2 provides a standardized installation interface for the semiconductor laser package 1, adaptable to the mounting holes of different devices, facilitating the assembly and fixing of the entire package structure with external equipment and improving installation versatility. The sealing cover 8 achieves a sealed enclosure of the internal cavity of the semiconductor laser package 1 through a screw connection, preventing internal components from being contaminated by external factors and facilitating subsequent... The internal components are assembled, inspected, and replaced regularly. The insulating electrode holder 3 is made of high-insulation material to achieve electrical isolation between the electrode 4 and the semiconductor laser package 1, avoiding leakage current, short circuits, and other faults caused by contact between the electrode 4 and the semiconductor laser package 1, thus ensuring power supply safety. The electrode 4 serves as the connection carrier between the external power supply and the internal laser chip 53, enabling stable power transmission and providing working power for the laser chip 53. The bottom round hole 9 provides a dedicated installation channel for the threaded adjustment column 513 and the bottom anti-loosening component 7, enabling manual adjustment and anti-loosening locking of the internal height adjustment mechanism 5 from the outside of the semiconductor laser package 1 without disassembling the sealing cover 8, thus improving ease of use.

[0046] Regarding the compatibility between the temperature deformation of the warped bimetallic arc plate 59 and the height shift of the laser chip 53's emitting point, this compatibility is mainly achieved through experimental verification of existing material properties and optimization of structural parameters. The specific process is as follows: First, through existing conventional material thermal expansion coefficient testing experiments, the actual thermal expansion coefficients of the upper Mn72Cu18Ni10 manganese-nickel-copper alloy arc plate and the lower 4J36 Invar alloy arc plate in the warped bimetallic arc plate 59 are accurately measured. At the same time, the thermal expansion characteristics of related components such as the laser chip 53, ceramic substrate 51, and connecting bridge 510 are tested to clarify the thermal deformation of each component in different temperature ranges. The deformation was measured to determine the vertical offset of the light-emitting point of the laser chip 53. Subsequently, based on the experimental data, the curvature, thickness, and length of the warped bimetallic arc plate 59, as well as the bonding process of the two alloy plates, were optimized. Through multiple high and low temperature cycling experiments, different operating temperature conditions of the semiconductor laser were simulated. The actual deformation of the warped bimetallic arc plate 59 and the offset of the light-emitting point of the laser chip 53 were recorded. The parameters were repeatedly adjusted until they were perfectly matched. That is, the adaptive deformation of the warped bimetallic arc plate 59 with temperature changes could drive the ceramic substrate 51 and the laser chip 53 to move in opposite directions, precisely offsetting the vertical offset of the light-emitting point. The above-mentioned method of determining the thermal expansion coefficient of the material and optimizing structural parameters to achieve a match through experimental verification is a conventional existing technique in the field of thermal deformation compensation for semiconductor lasers. The relevant experimental methods and parameter optimization logic are well known to those skilled in the art and will not be elaborated here.

[0047] In this method, a light-emitting tube 10 is fixedly installed at one end of the semiconductor laser package 1, a light-transmitting lens 11 is fixedly installed inside the light-emitting tube 10, and inclined side supports 12 are symmetrically arranged on both sides of the inner end of the light-emitting tube 10. The inclined side supports 12 are fixedly installed at the bottom inside the semiconductor laser package 1, and a focusing lens 13 is fixedly installed on the inclined side supports 12. A temperature sensor 14 is fixedly installed on the inner wall of the semiconductor laser package 1, and a microcontroller 15 is fixedly installed at the bottom inside the semiconductor laser package 1.

[0048] Through the above-described configuration, the light-emitting tube 10 provides a dedicated protective cavity for laser output, limiting the laser output direction and preventing external impurities and collisions from interfering with the laser output path. The light-transmitting lens 11 is made of high-transmittance, high-wear-resistant optical glass, which can achieve lossless isolation output of the laser beam and prevent external dust and moisture from entering the semiconductor laser packaging box 1, protecting the internal optical components and electronic components. The tilting support 12 provides precise tilt angle installation support for the focusing lens 13 according to the requirements of the laser propagation path, ensuring that the focusing lens 13 can be accurately aligned with the light-emitting area of ​​the laser chip 53, and converging the divergent beam emitted by the laser chip 53 into a parallel beam. Alternatively, a collimated beam can be used to significantly improve the concentration of laser light output and the fiber coupling efficiency. Temperature sensor 14 monitors the temperature changes inside the semiconductor laser package 1 in real time, converts the temperature signal into an electrical signal, and transmits it to the microcontroller 15, providing the microcontroller 15 with accurate temperature feedback. As the control core of the entire package structure, the microcontroller 15 can combine a preset program to control the speed of the fan 64 in the cooling mechanism 6 and the working state of the semiconductor cooling chip 66 based on the temperature signal fed back by the temperature sensor 14, thereby constructing a closed-loop temperature control system to ensure that the internal temperature of the semiconductor laser package 1 is stable within a reasonable range, avoiding component deformation, light-emitting point displacement, and component aging caused by excessive temperature.

[0049] In this method, a mounting groove 52 is provided on the ceramic substrate 51, and a laser chip 53 is disposed on the mounting groove 52. A long strip metal seat 54 and an L-shaped metal seat 55 are fixedly mounted on the upper side of the ceramic substrate 51. The pins on both sides of the laser chip 53 are respectively soldered to the upper side of the long strip metal seat 54 and the L-shaped metal seat 55. The ends of the long strip metal seat 54 and the L-shaped metal seat 55 are electrically connected to conductive copper wires 56, and the other end of the conductive copper wires 56 is respectively connected to the inner end of the electrode 4.

[0050] Through the above-described configuration, the ceramic substrate 51 is made of highly thermally conductive and highly insulating alumina or aluminum nitride ceramic. This provides a stable mounting surface for the laser chip 53 and allows for rapid heat dissipation from the laser chip 53 during operation. The heat generated by the laser chip 53 is quickly transferred to the warped bimetallic arc plate 59 and cooling mechanism 6 below, preventing damage to the laser chip 53 due to overheating. The dimensions of the mounting slot 52 precisely match those of the laser chip 53, ensuring accurate positioning and installation of the laser chip 53. This prevents misalignment of the laser chip 53 during assembly and ensures its efficient light emission. The center of the laser output path is aligned with the center of the focusing lens 13 and the light-transmitting lens 11 to ensure the accuracy of the laser output path. The long metal base 54 and the L-shaped metal base 55 are made of copper alloy with high conductivity and high thermal conductivity, which provides stable welding support points for the pins on both sides of the laser chip 53 to ensure that the welding is firm and the contact is good. The conductive copper wire 56 has good conductivity and flexibility, realizes the electrical connection between the long metal base 54, the L-shaped metal base 55 and the electrode 4, and forms a complete power supply circuit to ensure that the power of the external power supply can be stably transmitted to the laser chip 53 and ensure that the laser chip 53 emits light normally.

[0051] In this method, guide telescopic cylinders 58 are fixedly installed at the four corners of the bottom of the ceramic substrate 51. The bottom of the guide telescopic cylinders 58 is fixedly installed at the bottom of the semiconductor laser package box 1. A positioning screw is screwed onto the side wall of the fixing groove 57. A threaded hole 512 is opened in the center of the central column seat 511. The upper end of the threaded adjusting column 513 is screwed into the inner side of the threaded hole 512. The threaded adjusting column 513 is rotatably installed at the bottom of the semiconductor laser package box 1. A nut 514 is fixedly connected to the bottom end of the threaded adjusting column 513. The nut 514 rotates through to the inner side of the bottom round hole 9. A hexagonal concave hole 515 is opened at the center of the nut 514.

[0052] Through the above-described configuration, the guide telescopic cylinder 58 adopts a telescopic metal sleeve structure, symmetrically installed at the four corners of the bottom of the ceramic substrate 51. This provides precise vertical guidance for the lifting and lowering movement of the ceramic substrate 51, restricting its horizontal displacement and tilt. This ensures that the ceramic substrate 51 remains horizontal during height adjustment (manual adjustment or thermal adaptive compensation), preventing the laser chip 53 from tilting and guaranteeing the positional accuracy of the light-emitting point. The positioning screws on the side wall of the fixing groove 57 securely lock the warped bimetallic arc plate 59 within the fixing groove 57, preventing displacement of the warped bimetallic arc plate 59 during deformation and stress. This also facilitates the subsequent disassembly, replacement, and maintenance of the warped bimetallic arc plate 59. The threaded hole 512 on the central column seat 511 is precisely matched with the external thread of the threaded adjusting column 513. By rotating the nut 514 with an external tool, the threaded adjusting column 513 can be rotated, thereby driving the central column seat 511, the connecting bridge seat 510 and the ceramic substrate 51 to move up and down, so as to realize the initial height of the light-emitting point of the laser chip 53 manually calibrated, ensuring that the height of the light-emitting point of the laser chip 53 is aligned with the light-emitting tube 10. The nut 514 provides a force point for the rotation of the threaded adjusting column 513. The hexagonal concave hole 515 is adapted to common tools such as hexagonal wrenches, which is convenient for operators to make manual adjustments. At the same time, it provides a fitting interface for the hexagonal protrusion 72 of the bottom anti-loosening component 7 to realize the anti-loosening locking of the threaded adjusting column 513.

[0053] Second embodiment: Please refer to the following: Figures 11-15 Several semiconductor cooling chips 66 are fixedly attached to the side wall of the air inlet duct 61. A bent pipe 67 is provided in the gap between adjacent semiconductor cooling chips 66. The inner end of the bent pipe 67 passes through to the inner side of the air inlet duct 61. The outer ends of several bent pipes 67 are connected and fixedly installed to a ring pipe 69. Several arc-shaped cooling air ducts 610 are fixedly installed on the side wall of the ring pipe 69. The bent pipe 67 is fixedly connected to the side wall of the air inlet duct 61.

[0054] With the above configuration, the semiconductor cooling chip 66 is attached to the side wall of the air inlet duct 61, achieving cooling through the Peltier effect. Its cold end contacts the inner wall of the air inlet duct 61, which can quickly pre-cool the outside air entering the air inlet duct 61, reducing the air temperature entering the semiconductor laser package 1, significantly improving the heat dissipation efficiency of the main air duct, and providing a low-temperature heat dissipation environment for core components such as the laser chip 53 and the ceramic substrate 51. The bent pipe 67 is made of a high thermal conductivity metal tube, with one end extending through the side wall of the air inlet duct 61 to the inside of the air inlet duct 61, which can introduce some of the pre-cooled cold air in the air inlet duct 61 into the ring pipe 69, and the other end... It is fixedly connected to the ring pipe 69 to achieve stable delivery of cold air; the ring pipe 69 has a ring structure, which evenly distributes the cold air delivered by the bend pipe 67 to each arc-shaped cooling air duct 610, ensuring uniform airflow from each arc-shaped cooling air duct 610; the air outlet of the arc-shaped cooling air duct 610 is aligned with the hot end of the semiconductor cooling chip 66, which can blow cold air to the hot end of the semiconductor cooling chip 66, quickly remove the heat generated by the semiconductor cooling chip 66 during operation, prevent the semiconductor cooling chip 66 from overheating and causing a decrease in cooling performance or failure, ensure the long-term stable operation of the semiconductor cooling chip 66, and thus ensure the overall heat dissipation effect of the cooling mechanism 6.

[0055] In this configuration, the air inlet pipe 61 and the air outlet pipe 62 are symmetrically and fixedly installed on the side wall of the semiconductor laser package box 1. The inner ends of the air inlet pipe 61 and the air outlet pipe 62 pass through to the inside of the semiconductor laser package box 1. Both the inner ends of the air inlet pipe 61 and the air outlet pipe 62 are fixedly installed with flared conical openings 63. Several air holes are provided on the inner side of the flared conical openings 63. A fan 64 is fixedly installed at the outer port of the air outlet pipe 62. Dustproof sleeves 65 are screwed onto the ends of the fan 64 and the air inlet pipe 61. The two flared conical openings 63 are symmetrically and obliquely arranged on both sides above the ceramic substrate 51.

[0056] With the above configuration, the air inlet duct 61 serves as the channel for cold air from the outside to enter the semiconductor laser package 1, and the air outlet duct 62 serves as the channel for hot air to exit the semiconductor laser package 1. The two are symmetrically installed to form a directional convection airflow duct, achieving air circulation and replacement inside the semiconductor laser package 1. The flared conical inlet 63 adopts a flared structure, which can increase the coverage area of ​​the air inlet and outlet. Simultaneously, its inner air holes can disperse the airflow into uniform fine streams, preventing the airflow from directly impacting precision components such as the laser chip 53 and the focusing lens 13. At the same time, it ensures that the airflow can evenly cover the ceramic substrate 51 and the laser chip 53, quickly removing the heat generated by the core heat source. The fan 64 provides power to the entire cooling airflow duct. It is installed at the air outlet duct, ensuring that the working heat source can be discharged promptly. After starting, it can provide power to the air outlet duct. A negative pressure is created at point 62, driving outside air into the semiconductor laser package 1 through the air inlet pipe 61 and then out through the air outlet pipe 62, accelerating the air circulation inside the semiconductor laser package 1 and improving heat dissipation efficiency. The dust cover 65 adopts a structure with a filter screen, which can filter dust and impurities in the outside air, preventing dust from entering the air inlet pipe 61, the air outlet pipe 62 and the inside of the semiconductor laser package 1, and preventing dust from adhering to the surface of the laser chip 53, the light-transmitting lens 11 and the focusing lens 13, affecting the laser output performance and the life of the components. The two flared conical openings 63 are symmetrically and inclinedly set on both sides above the ceramic substrate 51, which can make the air inlet and outlet airflow form a circulating convection, ensuring that the temperature of each area inside the semiconductor laser package 1 is uniform, avoiding thermal deformation of components and displacement of the light emission point caused by local overheating.

[0057] In this configuration, the outer ends of the air inlet pipe 61 and the air outlet pipe 62 are both curved downwards. The inner end of the curved pipe 67 is provided with a flared air inlet 68, which is inclined downwards. The arc-shaped cooling air pipe 610 is inclined upwards, and a dust cap 611 is fitted at the end of the arc-shaped cooling air pipe 610.

[0058] With the above-mentioned configuration, the outer ends of the air inlet duct 61 and the air outlet duct 62 are curved downwards, which can effectively prevent rainwater, dust and other impurities from directly entering the air duct under the action of gravity, and improve the protection performance of the cooling mechanism 6 and the entire encapsulation structure in complex environments (such as outdoor, dusty scenarios); the flared air inlet 68 at the inner end of the curved duct 67 is inclined downwards, which can increase the air intake area and increase the intake of cold air to ensure the airflow supply of the arc-shaped cooling air duct 610. On the other hand, it can guide a part of the airflow in the air inlet duct 61 directly into the curved duct 67 to ensure the airflow stability of the main air duct and the auxiliary cooling air duct; the arc-shaped cooling air duct 610 is inclined upwards, which can make the air outlet accurately align with the hot end of the semiconductor cooling chip 66, improve the heat dissipation effect of the semiconductor cooling chip 66, and the dust cap 611 can further filter the dust entering the arc-shaped cooling air duct 610, prevent the air duct from being blocked, ensure the smooth flow of the auxiliary cooling air duct, and ensure the heat dissipation stability of the semiconductor cooling chip 66.

[0059] Third embodiment: Please refer to the following: Figures 16-17 The bottom anti-loosening component 7 includes a rubber sleeve 71, a hexagonal protrusion 72 on the upper side of the rubber sleeve 71, and a permanent magnet block 75 embedded in the inner side of the rubber sleeve 71.

[0060] Through the above-described configuration, the core function of the bottom anti-loosening component 7 is to prevent the threaded adjusting column 513 from loosening due to vibration, thermal stress, and other factors during long-term operation of the semiconductor laser, thus preventing the light-emitting point from drifting. The rubber sleeve 71 is made of highly elastic, high-friction rubber material, possessing excellent elastic deformation capability and sealing performance. It can form an interference fit with the bottom round hole 9, tightly adhering to the inner wall of the bottom round hole 9. The hexagonal protrusion 72 precisely matches the hexagonal recess 515 in the center of the nut 514, and after engagement, it can restrict the circumferential rotation of the nut 514, preventing... The nut 514 rotates on its own, causing the threaded adjusting column 513 to loosen. The permanent magnet block 75 is embedded inside the rubber sleeve 71, generating a stable magnetic pre-tightening force with the bottom of the nut 514 (metal material), applying a downward pre-tightening force to the nut 514, restricting the axial movement of the nut 514, and further enhancing the tightness of the fit between the hexagonal protrusion 72 and the hexagonal concave hole 515, realizing a double anti-loosening locking of the threaded adjusting column 513 with "circumferential anti-rotation + axial anti-movement", ensuring that the height of the threaded adjusting column 513 remains stable after adjustment, and ensuring the long-term reliability of the height of the light-emitting point.

[0061] In this method, the rubber sleeve 71 is inserted into the inner side of the bottom round hole 9, the hexagonal protrusion 72 is inserted into the inner side of the hexagonal concave hole 515, the bottom of the rubber sleeve 71 is provided with a prying inner hole 73, and the side wall of the rubber sleeve 71 is provided with anti-slip grooves 74 evenly distributed.

[0062] With the above-described configuration, the rubber sleeve 71 is inserted into the inner side of the bottom circular hole 9, utilizing its elastic deformation capability to form an interference fit with the bottom circular hole 9, achieving a tight fit; the hexagonal protrusion 72 is precisely inserted into the inner side of the hexagonal concave hole 515, forming a circumferential limiting structure, directly restricting the rotation of the nut 514; during disassembly, the rubber sleeve 71 can be pried by prying the inner hole 73, and the anti-slip grooves 74 evenly distributed on the side wall of the rubber sleeve 71 can increase the contact area and friction coefficient between the rubber sleeve 71 and the inner wall of the bottom circular hole 9, further improving the fixing stability of the rubber sleeve 71 and preventing the rubber sleeve 71 from shifting itself. At the same time, the rubber sleeve 71 can seal the bottom circular hole 9, preventing external moisture and dust from entering the semiconductor laser packaging box 1 through the bottom circular hole 9, improving the protection level of the entire packaging structure, and protecting the stable operation of the internal components.

[0063] The above should be further explained as follows: The thermoelectric cooler 66 is selected as HT040802M-Arc, with dimensions of 8mm × 8mm × 2.2mm and an arc radius of 15mm. It is bonded to the pipe wall using thermally conductive adhesive. The thermally conductive adhesive is an organic silicone thermally conductive adhesive with a thermal conductivity ≥1.5W / (m·K), ensuring efficient heat conduction between the thermoelectric cooler 66 and the side wall of the air inlet duct 61. The fan 64 is a miniature axial flow fan, model FA15060, with a rated voltage of 12V, a rated power of 3W, and an airflow ≥10CFM, ensuring sufficient power for convection cooling in the main air duct. The temperature sensor 14 is a PT100 platinum resistance temperature sensor, with a measurement range... The temperature range is -50℃ to 250℃, with an accuracy of ±0.5℃. It can accurately monitor the internal temperature changes of the package and feed them back to the microcontroller 15. The microcontroller 15 is an STM32F103C8T6 with a main frequency of 72MHz, which has efficient data processing capabilities and can control the working status of the fan 64 and the semiconductor cooling chip 66 in conjunction with the feedback signal from the temperature sensor 14. The ceramic substrate 51 is made of aluminum nitride (AlN) ceramic substrate, which not only ensures the stable installation of the laser chip 53, but also achieves efficient heat dissipation and electrical isolation. The insulating electrode holder 3 is made of polytetrafluoroethylene with a dielectric constant ≤2.1 and a breakdown voltage ≥20kV / mm to ensure that the electrical isolation performance meets the standards. The above component selection parameters, models and connection methods are all existing conventional technologies in the field of semiconductor laser packaging. The relevant components can be purchased through existing market channels. Their specific structure and working principle are well known to those skilled in the art and will not be described in detail here.

[0064] The working principle of the semiconductor laser packaging structure with adjustable light emission point height provided by this invention is as follows:

[0065] During the semiconductor laser assembly stage, the screw 514 at the bottom of the semiconductor laser package 1 can be rotated to drive the threaded adjustment column 513 to rotate. The threaded engagement between the threaded adjustment column 513 and the central column seat 511 drives the connecting bridge seat 510, the warped bimetallic arc plate 59, and the ceramic substrate 51 to rise and fall, thereby achieving the initial height calibration of the light-emitting point of the laser chip 53. When the device is working, the heat generated by the laser chip 53 is conducted to the ceramic substrate 51, and then transferred to the warped bimetallic arc plate 59 through the contact area between the bottom of the ceramic substrate 51 and the warped bimetallic arc plate 59. Due to the difference in thermal expansion coefficients between the upper manganese nickel copper alloy arc plate and the lower Invar alloy arc plate, the warped bimetallic arc plate 59 undergoes adaptive bending or springback with temperature changes. The deformation force is transferred to the ceramic substrate 51 through the connecting bridge seat 510 and the central column seat 511, causing the laser chip 53 to rise and fall in the opposite direction, accurately offsetting the light-emitting point offset caused by thermal expansion and contraction. At the same time, the guide telescopic cylinder 58 provides vertical guidance for the rise and fall of the ceramic substrate 51, ensuring the stability of the light-emitting point height.

[0066] When the semiconductor laser is working, the microcontroller 15 receives the internal temperature signal of the semiconductor laser package 1 monitored by the temperature sensor 14, and controls the cooling mechanism 6 to work in conjunction with it. After the fan 64 starts, it creates a negative pressure at the air outlet 62, driving outside air to enter through the air inlet 61. The semiconductor cooling chip 66 on the side wall of the air inlet 61 precools the air. The precooled air is evenly blown onto the ceramic substrate 51 and the laser chip 53 through the flared conical nozzle 63, quickly carrying away the heat from the core heat source, and then discharged through the air outlet 62. At the same time, some of the precooled air in the air inlet 61 enters the ring pipe 69 through the bend 67, and then is blown onto the hot end of the semiconductor cooling chip 66 through the arc-shaped cooling air duct 610 to prevent the semiconductor cooling chip 66 from overheating and failing. The dust cover 65 and the dust cap 611 filter dust. The outer arc of the air inlet 61 and the air outlet 62 is set downward to prevent impurities from entering, thus constructing an efficient closed-loop heat dissipation system.

[0067] After the initial height calibration of the laser chip 53's light-emitting point is completed, the rubber sleeve 71 of the bottom anti-loosening component 7 is inserted into the bottom round hole 9, so that the hexagonal protrusion 72 on the rubber sleeve 71 is embedded in the hexagonal concave hole 515 of the nut 514. The interference fit between the rubber sleeve 71 and the bottom round hole 9 and the anti-slip groove 74 on the side wall increase the frictional resistance and restrict the circumferential rotation of the nut 514. At the same time, the permanent magnet block 75 on the inner side of the rubber sleeve 71 generates a magnetic pre-tightening force with the metal nut 514, which restricts the axial movement of the nut 514. This achieves a double locking of "circumferential anti-rotation + axial anti-movement" for the threaded adjustment column 513, preventing the light-emitting point height from drifting due to loosening of the threaded adjustment column 513 during long-term operation, and ensuring the long-term reliability of the adjustment accuracy.

[0068] The above description is merely an embodiment of the present invention and does not limit the patent scope of the present invention. Any equivalent structural or procedural transformations made based on the content of the present invention specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of the present invention.

Claims

1. A semiconductor laser packaging structure with adjustable light-emitting point height, characterized in that, include: Semiconductor laser package (1); The height adjustment mechanism (5) includes a ceramic substrate (51), and four sets of fixing grooves (57) are provided at the bottom of the ceramic substrate (51). A warped bimetallic arc plate (59) is inserted and installed between two sets of fixing grooves (57). The warped bimetallic arc plate (59) includes a manganese nickel copper alloy arc plate and an Invar alloy arc plate. A connecting bridge (510) is connected between two sets of warped bimetallic arc plates (59). A central column seat (511) is provided at the center of the bottom of the connecting bridge seat (510). A threaded adjusting column (513) is provided on the lower side of the central column seat (511). Cooling mechanism (6), the cooling mechanism (6) includes an air inlet pipe (61) and an air outlet pipe (62); Bottom anti-loosening component (7) is disposed at the bottom of semiconductor laser package (1).

2. The semiconductor laser packaging structure with adjustable light-emitting point height according to claim 1, characterized in that, A number of semiconductor cooling chips (66) are fixedly attached to the side wall of the air inlet pipe (61). A bent pipe (67) is provided in the gap between adjacent semiconductor cooling chips (66). The inner end of the bent pipe (67) passes through to the inner side of the air inlet pipe (61). A ring pipe (69) is installed on the outer ends of the multiple bent pipes (67). A number of arc-shaped cooling air pipes (610) are provided on the side wall of the ring pipe (69).

3. The semiconductor laser packaging structure with adjustable light-emitting point height according to claim 1, characterized in that, The bottom anti-loosening component (7) includes a rubber sleeve (71), a hexagonal protrusion (72) is provided on the upper side of the rubber sleeve (71), and a permanent magnet block (75) is embedded in the inner side of the rubber sleeve (71).

4. The semiconductor laser packaging structure with adjustable light-emitting point height according to claim 1, characterized in that, The semiconductor laser package (1) has mounting side seats (2) on both sides of the bottom, a sealing cover (8) on the upper side, an insulating electrode seat (3) on the side wall, electrodes (4) symmetrically inserted into the inner side of the insulating electrode seat (3), and a bottom circular hole (9) at the bottom of the semiconductor laser package (1).

5. The semiconductor laser packaging structure with adjustable light-emitting point height according to claim 1, characterized in that, The semiconductor laser package (1) is equipped with a light-emitting tube (10) at one end. A light-transmitting lens (11) is installed inside the light-emitting tube (10). Inclined side supports (12) are symmetrically arranged on both sides of the inner end of the light-emitting tube (10). A focusing lens (13) is installed on the inclined side support (12). A temperature sensor (14) is installed on the inner wall of the semiconductor laser package (1). A microcontroller (15) is arranged at the bottom of the inner side of the semiconductor laser package (1).

6. The semiconductor laser packaging structure with adjustable light-emitting point height according to claim 1, characterized in that, A mounting groove (52) is provided on the ceramic substrate (51), and a laser chip (53) is provided on the mounting groove (52). A long strip metal seat (54) and an L-shaped metal seat (55) are mounted on the upper side of the ceramic substrate (51). The pins on both sides of the laser chip (53) are respectively soldered to the upper side of the long strip metal seat (54) and the L-shaped metal seat (55). The ends of the long strip metal seat (54) and the L-shaped metal seat (55) are electrically connected to conductive copper wires (56), and the other end of the conductive copper wires (56) is respectively connected to the inner end of the electrode (4).

7. The semiconductor laser packaging structure with adjustable light-emitting point height according to claim 1, characterized in that, The ceramic substrate (51) is equipped with guide telescopic cylinders (58) at the four corners of the bottom. The center column seat (511) has a threaded hole (512) in the center. The threaded adjustment column (513) is rotatably installed at the bottom of the semiconductor laser package box (1). The bottom end of the threaded adjustment column (513) is provided with a nut (514). The nut (514) rotates through to the inside of the bottom round hole (9). The center of the nut (514) has a hexagonal concave hole (515).

8. The semiconductor laser packaging structure with adjustable light-emitting point height according to claim 2, characterized in that, The air inlet pipe (61) and air outlet pipe (62) are symmetrically installed on the side wall of the semiconductor laser packaging box (1). The inner ends of the air inlet pipe (61) and air outlet pipe (62) are provided with flared conical openings (63). Several air holes are provided on the inner side of the flared conical openings (63). A fan (64) is installed at the outer port of the air outlet pipe (62). Dustproof caps (65) are fitted on the ends of the fan (64) and the air inlet pipe (61). The two flared conical openings (63) are symmetrically inclined on both sides above the ceramic substrate (51).

9. A semiconductor laser packaging structure with adjustable light-emitting point height according to claim 2, characterized in that, The outer ends of the air inlet pipe (61) and the air outlet pipe (62) are both curved downwards. The inner end of the curved pipe (67) is provided with a flared air inlet (68). The flared air inlet (68) is inclined downwards. The arc-shaped cooling air pipe (610) is inclined upwards. A dust cap (611) is fitted at the port of the arc-shaped cooling air pipe (610).

10. A semiconductor laser packaging structure with adjustable light-emitting point height according to claim 3, characterized in that, The bottom of the rubber sleeve (71) is provided with a prying inner hole (73), and anti-slip grooves (74) are evenly distributed on the side wall of the rubber sleeve (71).

Images