A high gain boost circuit based on tapped inductors

Abstract

The application discloses a high-gain boost circuit based on a tapped inductor, which comprises an input power Vin, a switch tube S, a first capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4, a fifth capacitor C5, a first diode D1, a second diode D2, a third diode D3, a fourth diode D4, a fifth diode D5 and a load R L and a tapped inductor composed of a first winding n1 and a second winding n2, the first winding n1 and the second winding n2 are wound in the same direction on the same magnetic core; the input end of the first winding n1 and the negative pole of the third capacitor C3 are connected with the positive pole of the input power Vin at the same time; the application can realize high-voltage gain output while keeping the circuit structure simple, low in cost, and effectively reducing the voltage stress of the switch tube.

Description

Technical Field

[0001] This invention relates to the field of new energy power generation, and specifically to a high-gain boost circuit based on tapped inductors. Background Technology

[0002] With the escalating global energy crisis and increasing environmental awareness, distributed power generation systems such as photovoltaic (PV) power generation and fuel cells have seen widespread development and adoption. Because the DC voltage output by individual PV cells and fuel cells is typically low (e.g., PV panel output voltage is generally 24V~48V, and fuel cell output voltage is even lower), while the DC bus voltage required by grid-connected inverters or loads is typically as high as 380V~400V or even higher, high step-up ratio DC-DC converters play a crucial role as front-end boosting devices in distributed power generation systems. Their performance directly affects the conversion efficiency, cost, and reliability of the entire system, thus attracting increasing attention from academia and industry.

[0003] Currently, traditional DC-DC boost converters primarily employ the Boost converter topology. Theoretically, a Boost converter can achieve high voltage gain by adjusting the duty cycle of its power switches; when the duty cycle approaches 1, its output voltage can theoretically approach infinity. However, in practical engineering applications, due to the conduction and switching losses of power devices such as power switches and diodes, as well as the parasitic parameters of passive components such as inductors and capacitors, the duty cycle of a Boost converter is typically limited to below 0.8. If the duty cycle is too high, it not only leads to a sharp increase in the conduction losses of the power switches and a significant decrease in the overall converter efficiency, but also causes problems such as prolonged diode reverse recovery time and increased inductor current ripple. In severe cases, it may even damage power devices due to overheating. Therefore, traditional Boost converters struggle to achieve high-gain voltage output in practical applications, making it difficult to meet the high boost ratio requirements of distributed generation systems.

[0004] To overcome the limitations of traditional boost converters in terms of voltage boosting capability, various alternative solutions have been proposed in existing technologies. One common approach is to utilize power conversion circuits with high-turn-ratio high-frequency transformers to achieve high boost ratios, such as isolated DC-DC converter topologies like flyback converters, forward converters, and LLC resonant converters. These converters can theoretically achieve arbitrarily high voltage gains by adjusting the turns ratio of the high-frequency transformer and can achieve electrical isolation between input and output, offering certain technical advantages. However, these isolated converters still have many shortcomings in practical applications: First, in order to drive the high-frequency transformer and achieve power transmission, the circuit usually needs to set up more than two fully controlled switching devices (such as flyback converters which require one switching transistor and one rectifier transistor, but in actual high-efficiency designs, synchronous rectification is often used, which requires two fully controlled devices; forward converters and LLC converters usually require two or four switching transistors), which undoubtedly increases the complexity of the drive circuit and the overall cost of the system; Second, the presence of the high-frequency transformer not only increases the size and weight of the converter, but its leakage inductance will also cause voltage spikes across the switching transistors, requiring additional absorption circuits or the selection of higher voltage-rated power devices, further increasing the complexity and cost of the system; Third, isolated converters have higher losses under light load or no-load conditions, and their overall efficiency is often lower than that of non-isolated converters.

[0005] Therefore, in applications where electrical isolation is not required (such as the front-end boost stage in photovoltaic power generation systems), designing a high-gain boost converter with a simple circuit structure, few switching devices, low voltage stress on power devices, small size, and low cost while ensuring high voltage gain remains a pressing technical challenge in this field. This invention is proposed against this technical backdrop. Summary of the Invention

[0006] In order to overcome the shortcomings of the prior art, the purpose of this invention is to provide a high-gain boost circuit based on tapped inductors, which can achieve high voltage gain output while maintaining a simple circuit structure and low cost, and can effectively reduce the voltage stress on the switching transistors.

[0007] To achieve the objectives of this invention, the following solution is adopted: A high-gain boost circuit based on a tapped inductor includes an input power supply Vin, a switching transistor S, a first capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4, a fifth capacitor C5, a first diode D1, a second diode D2, a third diode D3, a fourth diode D4, a fifth diode D5, and a load R. LAnd a tapped inductor, wherein the tapped inductor is composed of a first winding n1 and a second winding n2, wherein the first winding n1 and the second winding n2 are wound in the same direction on the same magnetic core; The input terminal of the first winding n1 and the negative terminal of the third capacitor C3 are simultaneously connected to the positive terminal of the input power supply Vin; the output terminal of the first winding n1 is connected to the first terminal of the switching transistor S, the anode of the first diode D1, and the input terminal of the second winding n2. The output terminal of the second winding n2 is connected to the negative terminal of the second capacitor C2; the positive terminal of the second capacitor C2 is connected to the cathode of the second diode D2, the anode of the third diode D3, and the negative terminal of the fourth capacitor C4. The second terminal of the switching transistor S is connected to the negative terminal of the input power supply Vin and the negative terminal of the first capacitor C1. The cathode of the first diode D1 is connected to the anode of the second diode D2 and the positive terminal of the first capacitor C1; The cathode of the third diode D3 is connected to the anode of the fourth diode D4 and the positive terminal of the third capacitor C3; The cathode of the fourth diode D4 is connected to the anode of the fifth diode D5 and the positive terminal of the fourth capacitor C4; The cathode of the fifth diode D5 is connected to the positive terminal of the fifth capacitor C5, and serves as the positive output terminal of the boost circuit; The negative terminal of the fifth capacitor C5 is connected to the negative terminal of the input power supply Vin and serves as the negative output terminal of the boost circuit; the load R L The positive and negative output terminals are connected respectively; the control terminal of the switching transistor S serves as the control input terminal of the boost circuit.

[0008] Furthermore, the turns ratio of the first winding n1 to the second winding n2 is n2 / n1=n, where n is a positive number.

[0009] Furthermore, the voltage gain of the boost circuit is G=(3+2n) / (1-d), where n is the turns ratio of the second winding n2 to the first winding n1, and d is the duty cycle of the switch S.

[0010] Furthermore, the switching transistor S is a fully controllable switching device.

[0011] Furthermore, the switching transistor S operates with a fixed switching frequency and an adjustable duty cycle.

[0012] Furthermore, when the switch S is turned off, the voltage across it is clamped to the voltage of the first capacitor C1, and the voltage stress of the switch S is 1 / (3+2n) of the output voltage.

[0013] Furthermore, the first capacitor C1, the second capacitor C2, the third capacitor C3, the fourth capacitor C4, and the fifth capacitor C5 are all filter capacitors.

[0014] Furthermore, the input power supply Vin is a DC power supply.

[0015] Furthermore, the input power source Vin is a photovoltaic power source or a fuel cell power source.

[0016] Furthermore, the boost circuit is used for DC-DC boost conversion in new energy power generation systems.

[0017] Compared with the prior art, the beneficial effects of the present invention are as follows: 1. This invention has the advantage of high voltage gain. The high-gain boost circuit based on tapped inductors proposed in this invention has a voltage gain of G=(3+2n) / (1-d), where n is the turns ratio of the second winding to the first winding, and d is the duty cycle of the switching transistor. Under the same duty cycle conditions, the voltage gain of this invention is much higher than that of the traditional Boost converter, G=1 / (1-d), and the larger the turns ratio n, the more significant the gain improvement. Taking n=2 and d=0.7 as an example, this invention can achieve a voltage gain of G=(3+4) / (0.3)=23.3 times, while the traditional Boost converter can only achieve about 3.3 times the gain under the same duty cycle. This means that this invention can achieve high-gain output without using a limit duty cycle, effectively avoiding problems such as a sharp increase in power device losses and a significant decrease in efficiency caused by an excessively large duty cycle.

[0018] 2. The circuit structure of this invention is simple and low in cost. Compared with existing isolated converters (such as flyback converters, forward converters, LLC resonant converters, etc.) that use high-frequency transformers to achieve high boost ratios, this invention only requires a single fully controlled switch to achieve high-gain boost functionality, eliminating the need for multiple switches and their associated isolation drive circuits. This not only greatly simplifies the circuit topology and control strategy and reduces system complexity, but also significantly reduces the number of components and manufacturing costs, which is beneficial for industrial production and miniaturized design.

[0019] 3. The switching transistor in this invention experiences low voltage stress, allowing the use of low-voltage power devices. In this invention, when the switching transistor is turned off, its voltage is clamped to the voltage of the first capacitor, Vc1 = Vin / (1-d), while the output voltage is Vo = Vin × (3+2n) / (1-d). The voltage stress on the switching transistor is only 1 / (3+2n) of the output voltage, far lower than the output voltage. Taking n=2 as an example, the voltage stress on the switching transistor is only 1 / 7 of the output voltage, meaning that when the output voltage reaches 400V, the switching transistor only needs to withstand approximately 57V. Therefore, this invention can use low-voltage MOSFETs with low rated voltage, low on-resistance, and low cost as the switching transistor. Furthermore, low-voltage MOSFETs typically have superior switching characteristics and lower conduction losses, which is beneficial for further improving the converter's operating efficiency.

[0020] 4. This invention boasts high energy conversion efficiency. Utilizing the coupling characteristics of the tapped inductor, this invention achieves full utilization of input energy during both the on and off phases of the switch: when the switch is on, the input power stores energy in the first winding, while the second winding charges the capacitors through corresponding diodes; when the switch is off, the capacitors and tapped inductors are connected in series and then superimposed to supply power to the load. Energy can be effectively transferred throughout the entire switching cycle, avoiding energy feedback losses that may exist in traditional converters, thus significantly improving conversion efficiency.

[0021] 5. This invention can be applied to the front-end DC boost stage of distributed power generation systems for new energy sources such as photovoltaic power generation and fuel cell power generation. The boost circuit of this invention has a simple structure, small size, and low cost, and is suitable for boosting the low-voltage DC power output from photovoltaic panels or fuel cell stacks to the voltage level required by grid-connected inverters or DC buses. Attached Figure Description

[0022] Figure 1 This is a circuit diagram of a high-gain boost circuit based on a tapped inductor in an embodiment of the present invention; Figure 2 This is a schematic diagram of the operating mode of the high-gain boost circuit based on tapped inductors when the switch is turned on, as shown in the embodiment of the present invention. Figure 3 This is a schematic diagram of the working mode of the high-gain boost circuit based on tapped inductors when the switch is turned off in an embodiment of the present invention; Figure 4 This is a schematic diagram of a simulation model of a high-gain boost circuit based on a tapped inductor in an embodiment of the present invention; Figure 5 This is a schematic diagram of the simulation waveform when the duty cycle of switch S is 0.3 in an embodiment of the present invention; Figure 6 This is a schematic diagram of the simulation waveform when the duty cycle of switch S is 0.5 in an embodiment of the present invention; Figure 7 This is a schematic diagram of the simulation waveform when the duty cycle of switch S is 0.7 in an embodiment of the present invention. Detailed Implementation

[0023] The present invention will now be further described in conjunction with the accompanying drawings and specific embodiments. It should be noted that, without conflict, the various embodiments or technical features described below can be arbitrarily combined to form new embodiments.

[0024] like Figure 1 As shown, this embodiment of the invention provides a high-gain boost circuit based on a tapped inductor, including an input power supply Vin, a switching transistor S, a first capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4, a fifth capacitor C5, a first diode D1, a second diode D2, a third diode D3, a fourth diode D4, a fifth diode D5, and a load R. L And a tapped inductor, wherein the tapped inductor is composed of a first winding n1 and a second winding n2, wherein the first winding n1 and the second winding n2 are wound in the same direction on the same magnetic core; The input terminal of the first winding n1 and the negative terminal of the third capacitor C3 are simultaneously connected to the positive terminal of the input power supply Vin; the output terminal of the first winding n1 is connected to the first terminal of the switching transistor S, the anode of the first diode D1, and the input terminal of the second winding n2. The output terminal of the second winding n2 is connected to the negative terminal of the second capacitor C2; the positive terminal of the second capacitor C2 is connected to the cathode of the second diode D2, the anode of the third diode D3, and the negative terminal of the fourth capacitor C4. The second terminal of the switching transistor S is connected to the negative terminal of the input power supply Vin and the negative terminal of the first capacitor C1. The cathode of the first diode D1 is connected to the anode of the second diode D2 and the positive terminal of the first capacitor C1; The cathode of the third diode D3 is connected to the anode of the fourth diode D4 and the positive terminal of the third capacitor C3; The cathode of the fourth diode D4 is connected to the anode of the fifth diode D5 and the positive terminal of the fourth capacitor C4; The cathode of the fifth diode D5 is connected to the positive terminal of the fifth capacitor C5, and serves as the positive output terminal of the boost circuit; The negative terminal of the fifth capacitor C5 is connected to the negative terminal of the input power supply Vin and serves as the negative output terminal of the boost circuit; the load R LThe positive and negative output terminals are connected respectively; the control terminal of the switching transistor S serves as the control input terminal of the boost circuit.

[0025] The high-gain boost circuit based on tapped inductors in the embodiments of the present invention will be further described in detail below.

[0026] like Figure 1 As shown, the high-gain boost circuit based on a tapped inductor in this embodiment of the invention consists of a fully controlled switch S, a tapped inductor, five capacitors C1, C2, C3, C4, and C5, and five diodes D1, D2, D3, D4, and D5. It is used to convert the low-voltage DC Vin of the input power supply into a high-voltage DC Vo, and provide it to the load R. L .

[0027] A tapped inductor consists of a magnetic core and two windings, n1 and n2, wound sequentially in the same direction on the magnetic core. The turns ratio of the two windings is n2 / n1 = n.

[0028] The input terminal of the first winding n1 of the tapped inductor and the negative terminal of the third capacitor C3 are simultaneously connected to the positive terminal of the input power supply; the output terminal of the first winding n1 is connected to the first terminal of the switching transistor S, the anode of the first diode D1, and the input terminal of the second winding n2; the second terminal of the switching transistor S is connected to the negative terminal of the input power supply and the negative terminal of the first capacitor C1; the cathode of the first diode D1 is connected to the anode of the second diode D2 and the positive terminal of the first capacitor C1; the cathode of the second diode D2 is connected to the anode of the third diode D3, the positive terminal of the second capacitor C2, and the negative terminal of the fourth capacitor C4; the cathode of the third diode D3 is connected to the anode of the fourth diode D4 and the positive terminal of the third capacitor C3; the cathode of the fourth diode D4 is connected to the anode of the fifth diode D5 and the positive terminal of the fourth capacitor C4; the cathode of the fifth diode D5 is connected to the positive terminal of the fifth capacitor C5 and serves as the positive output terminal of the conversion circuit; the negative terminal of the fifth capacitor C5 is connected to the negative terminal of the input power supply and serves as the negative output terminal of the conversion circuit; the control terminal of the switching transistor S serves as the control input terminal of the conversion circuit and is connected to the PWM controller.

[0029] When the circuit is working, the switching transistor S1 operates with a fixed switching frequency and an adjustable duty cycle. When S is on, the state circuit is as follows: Figure 2As shown. The input voltage Vin is directly applied to the two ends of the first winding n1, inducing a voltage n×Vin across the second winding n2. This voltage is then connected in series with the first capacitor C1 via the switching transistor S, and then charged through the second diode D2. Therefore, the voltage of the second capacitor C2 is Vc2 = n×Vin + Vc1, where Vc1 is the voltage of capacitor C1. Simultaneously, the entire first winding n1+n2 of the tapped inductor is connected in series with the third capacitor C3, and then charged together with the fourth diode D4 to charge the fourth capacitor C4 and the second capacitor C2. Therefore, the voltage of the fourth capacitor C4 is Vc4 = Vc3 + (1+n)×Vin - Vc2, where Vc3 is the voltage of the third capacitor C3. In this state, the load R... L Power is supplied by the fifth capacitor C5.

[0030] When S is turned off, the state circuit is as follows: Figure 3 As shown. The first winding n1 is connected in series with the input power supply and discharges to the first capacitor C1 through the first diode D1. Therefore, the voltage of the first winding n1 is Vc1 - Vin. The total voltage of all the first windings n1 + n2 of the tapped inductor is (Vc1 - Vin) × (1 + n). All the first windings n1 + n2 of the tapped inductor are connected in series with the second capacitor C2 and discharge to the third capacitor C3 through the third diode D3. Therefore, the voltage of the third capacitor C3 is Vc3 = Vc2 + (Vc1 - Vin) × (1 + n). At the same time, all the first windings n1 + n2, the second capacitor C2, the fourth capacitor C4, and the input voltage Vin are connected in series and charge the fifth capacitor C5 and the load through the fifth diode D5. Therefore, the voltage of the fifth capacitor C5 is Vc5 = Vin + Vc2 + (Vc1 - Vin) × (1 + n) + Vc4.

[0031] When the switching transistor S operates alternately at high frequency in the on and off states analyzed above, the voltage across the first winding n1 switches frequently between Vin and Vc1-Vin. When the switching frequency is fixed and the duty cycle is d, the voltage across the first capacitor C1 can be obtained using the volt-second balance principle as Vc1 = Vin / (1-d). Therefore, the voltages across capacitors C2~C5 can be further expressed as: Vc2=n×Vin+Vc1=n×Vin+Vin / (1-d)=Vin×(1+n-nd) / (1-d) Vc3=Vc2+(Vc1-Vin)×(1+n)=Vin×(1+n+d) / (1-d) Vc4=Vc3+(1+n)×Vin-Vc2=Vin×(1+n) / (1-d) Vc5=Vin+Vc2+(Vc1-Vin)×(1+n)+Vc4=Vin×(3+2n) / (1-d) Since the voltage across C5 is the output voltage of the proposed converter circuit, the voltage gain of the circuit is G = Vo / Vin = Vc5 / Vin = (3 + 2n) / (1 - d).

[0032] Furthermore, when switch S is on, its voltage is 0; when S is off, the voltage across it is clamped to the capacitor voltage Vc1. From the above analysis, we know that the capacitor voltage Vc1 = Vin / (1-d), and the converter output voltage is Vo = Vc5 = Vin × (3+2n) / (1-d). Therefore, the voltage stress on switch S is only 1 / (3+2n) of the output voltage, indicating that the proposed circuit has the advantage of low voltage stress on the switching transistor, and a low-voltage switch can be used to achieve high-gain voltage output.

[0033] To verify the feasibility of the improved boost ratio converter circuit, a simulation was built in the simulation software as follows. Figure 4 The simulation model shown has the following parameters: Vin=24V, C1=C2=C3=C4=C5=100μF, tap inductor turns ratio n=n2 / n1=2, load RL=12ohm, and switching transistor control frequency 50kHz.

[0034] When the duty cycle d of the switching transistor control signal is set to 0.3, 0.5, and 0.7 respectively, the system simulation waveforms of capacitor voltages Vc1~Vc5 are as follows: Figure 5-7 As shown, the unit of voltage is volt (V).

[0035] Compared with existing DC-DC boost converter circuits, the high-gain boost circuit based on tapped inductors in this invention has the following advantages: 1. This invention achieves a higher boost ratio G under the same switch duty cycle, enabling a more efficient voltage boost. The high-gain boost circuit based on tapped inductors proposed in this invention has a voltage gain of G = (3 + 2n) / (1 - d), where n is the turns ratio of the second winding to the first winding, and d is the duty cycle of the switching transistor. Under the same duty cycle, the voltage gain of this invention is much higher than that of the traditional Boost converter, G = 1 / (1 - d), and the larger the turns ratio n, the more significant the gain improvement. Taking n = 2 and d = 0.7 as an example, this invention can achieve a voltage gain of G = (3 + 4) / (0.3) = 23.3 times, while the traditional Boost converter can only achieve about 3.3 times the gain under the same duty cycle. This means that this invention can achieve high-gain output without using a limit duty cycle, effectively avoiding problems such as a sharp increase in power device losses and a significant decrease in efficiency caused by an excessively large duty cycle. 2. This invention requires only one fully controlled switching device, eliminating the need for multiple switching transistors and their driving circuits, thus simplifying the circuit structure and reducing cost. Compared to existing isolated converters (such as flyback converters, forward converters, LLC resonant converters, etc.) that use high-frequency transformers to achieve high boost ratios, this invention only requires one fully controlled switching transistor to achieve high-gain boost functionality, eliminating the need for multiple switching transistors and their associated isolated driving circuits. This not only greatly simplifies the circuit topology and control strategy, reducing system complexity, but also significantly reduces the number of components and manufacturing costs, which is beneficial for industrial production and miniaturized design. 3. The low voltage stress of the switching transistor in this invention allows for the use of a low-voltage switch to achieve high-gain voltage output, which helps reduce the overall system cost. In this invention, when the switching transistor is turned off, its voltage is clamped to the voltage of the first capacitor, Vc1 = Vin / (1-d), while the output voltage is Vo = Vin × (3+2n) / (1-d). The voltage stress of the switching transistor is only 1 / (3+2n) of the output voltage, which is much lower than the output voltage. Taking n=2 as an example, the voltage stress of the switching transistor is only 1 / 7 of the output voltage, meaning that when the output voltage is as high as 400V, the switching transistor only needs to withstand about 57V. Therefore, this invention can use a low-voltage MOSFET with low rated voltage, low on-resistance, and low cost as the switching transistor. Furthermore, low-voltage MOSFETs typically have better switching characteristics and lower conduction losses, which helps to further improve the converter's operating efficiency.

[0036] The above is a detailed description of the preferred embodiments of the present invention. However, the present invention is not limited to the embodiments described. Those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit of the present invention. All such equivalent modifications or substitutions are included within the scope defined by the claims of this application.

Claims

1. A high-gain boost circuit based on a tapped inductor, comprising an input power supply (Vin), a switching transistor (S), a first capacitor (C1), a second capacitor (C2), a third capacitor (C3), a fourth capacitor (C4), a fifth capacitor (C5), a first diode (D1), a second diode (D2), a third diode (D3), a fourth diode (D4), a fifth diode (D5), and a load (R). L The system includes a tapped inductor consisting of a first winding (n1) and a second winding (n2), wherein the first winding (n1) and the second winding (n2) are wound in the same direction on the same magnetic core. Its features are, The input terminal of the first winding (n1) and the negative terminal of the third capacitor (C3) are simultaneously connected to the positive terminal of the input power supply (Vin); the output terminal of the first winding (n1) is connected to the first terminal of the switching transistor (S), the anode of the first diode (D1), and the input terminal of the second winding (n2). The output terminal of the second winding (n2) is connected to the negative terminal of the second capacitor (C2); the positive terminal of the second capacitor (C2) is connected to the cathode of the second diode (D2), the anode of the third diode (D3), and the negative terminal of the fourth capacitor (C4); The second terminal of the switching transistor (S) is connected to the negative terminal of the input power supply (Vin) and the negative terminal of the first capacitor (C1); The cathode of the first diode (D1) is connected to the anode of the second diode (D2) and the positive terminal of the first capacitor (C1); The cathode of the third diode (D3) is connected to the anode of the fourth diode (D4) and the positive terminal of the third capacitor (C3); The cathode of the fourth diode (D4) is connected to the anode of the fifth diode (D5) and the positive terminal of the fourth capacitor (C4); The cathode of the fifth diode (D5) is connected to the positive terminal of the fifth capacitor (C5) and serves as the positive output terminal of the boost circuit. The negative terminal of the fifth capacitor (C5) is connected to the negative terminal of the input power supply (Vin) and serves as the negative output terminal of the boost circuit; the load (R) L The positive and negative output terminals are respectively connected to the positive and negative output terminals; the control terminal of the switching transistor (S) serves as the control input terminal of the boost circuit.

2. The high-gain boost circuit based on tapped inductors according to claim 1, characterized in that, The turns ratio of the first winding (n1) to the second winding (n2) is n2 / n1=n, where n is a positive number.

3. The high-gain boost circuit based on tapped inductors according to claim 1, characterized in that, The voltage gain of the boost circuit is G=(3+2n) / (1-d), where n is the turns ratio of the second winding (n2) to the first winding (n1), and d is the duty cycle of the switch (S).

4. The high-gain boost circuit based on tapped inductors according to claim 1, characterized in that, The switching transistor (S) is a fully controllable switching device.

5. The high-gain boost circuit based on tapped inductors according to claim 4, characterized in that, The switching transistor (S) operates with a fixed switching frequency and an adjustable duty cycle.

6. The high-gain boost circuit based on tapped inductors according to claim 1, characterized in that, When the switch (S) is turned off, the voltage across it is clamped to the voltage of the first capacitor (C1), and the voltage stress of the switch (S) is 1 / (3+2n) of the output voltage.

7. The high-gain boost circuit based on tapped inductors according to claim 1, characterized in that, The first capacitor (C1), the second capacitor (C2), the third capacitor (C3), the fourth capacitor (C4), and the fifth capacitor (C5) are all filter capacitors.

8. The high-gain boost circuit based on tapped inductors according to claim 1, characterized in that, The input power supply (Vin) is a DC power supply.

9. The high-gain boost circuit based on tapped inductors according to claim 8, characterized in that, The input power source (Vin) is either a photovoltaic power source or a fuel cell power source.

10. The high-gain boost circuit based on tapped inductors according to any one of claims 1 to 9, characterized in that, The boost circuit is used for DC-DC boost conversion in new energy power generation systems.

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