A positive voltage controlled attenuator

Abstract

The application discloses a positive voltage control attenuator, and relates to the technical field of integrated circuits.The main technical scheme is as follows: a voltage conversion module and an attenuation module are included;the voltage conversion module comprises a first voltage dividing unit and a second voltage dividing unit;the first input end of the first voltage dividing unit is used for connecting an external positive control voltage;the second input end of the second voltage dividing unit is used for connecting a conversion power supply;the output end of the first voltage dividing unit is connected with the input end of the second voltage dividing unit;the attenuation module comprises a cascade switch unit, an input unit and an output unit;the input end of the cascade switch unit is connected with the output end of the second voltage dividing unit;the input end of the output unit is connected with the output end of the cascade switch unit and the output end of the input unit.Through the introduction of the voltage conversion module, good low-frequency characteristics under positive voltage control are realized.Meanwhile, through temperature compensation of the voltage conversion module, low-temperature drift characteristics of the voltage control attenuator are realized.

Description

Technical Field

[0001] This invention relates to the field of integrated circuit technology, and more specifically to a positive voltage controlled attenuator. Background Technology

[0002] In the existing technology, solutions such as "a voltage-controlled attenuator and chip with single voltage control" and "an ultra-wideband temperature-compensated voltage-controlled attenuator chip based on FET switching die" have achieved the function of continuously adjusting the attenuation amount with a single positive control voltage.

[0003] However, in order to achieve positive voltage control, ultrawideband temperature-compensated voltage-controlled attenuator chips based on FET switching dies require a DC blocking capacitor to be connected in series in the circuit. The presence of this capacitor causes the chip to be unable to cover the low-frequency operating frequency. Although single-voltage controlled voltage-controlled attenuators and chips use diodes instead of switching transistors, there is a DC bias voltage on the RF main circuit. In practical applications, an external DC blocking capacitor is still required, which also makes it difficult to achieve low-frequency performance. Summary of the Invention

[0004] The purpose of this invention is to provide a voltage-controlled attenuator with positive pressure control, which achieves the goal of taking into account low-frequency performance.

[0005] To solve the above-mentioned technical problems, the present invention adopts the following technical solution:

[0006] A positive voltage controlled attenuator includes a voltage conversion module and an attenuation module. The voltage conversion module includes a first voltage divider unit and a second voltage divider unit. The first input terminal of the first voltage divider unit is used to connect to an external positive control voltage, and the second input terminal of the second voltage divider unit is used to connect to a conversion power supply. The output terminal of the first voltage divider unit is connected to the input terminal of the second voltage divider unit. The attenuation module includes a cascaded switch unit, an input unit, and an output unit. The input terminal of the cascaded switch unit is connected to the output terminal of the second voltage divider unit, and the input terminal of the output unit is connected to both the output terminal of the cascaded switch unit and the output terminal of the input unit.

[0007] A further technical solution is as follows: the first voltage divider unit includes a resistor R27, diodes D1, D2, D3, D4, and a resistor R28; one end of the resistor R27 is used to connect to an external positive control voltage; the other end of the resistor R27 is connected to the anode of diode D1; the cathode of diode D1 is connected to the anode of diode D2; the cathode of diode D2 is connected to the anode of diode D3; the cathode of diode D3 is connected to the anode of diode D4; the cathode of diode D4 and one end of the resistor R28 are both connected to the second voltage divider unit; the other end of the resistor R28 is used to connect to the conversion power supply.

[0008] A further technical solution is as follows: the second voltage divider unit includes resistor R29 and resistor R30; one end of resistor R29 is connected to the negative terminal of diode D4 and one end of resistor R28; the other end of resistor R29 is connected to one end of resistor R30 and the input terminal of the cascaded switch unit; the other end of resistor R30 is connected to GND.

[0009] A further technical solution is as follows: the input unit includes a switch Q1, a resistor R1, an inductor L1, and an inductor L2; the gate of the switch Q1 is connected to one end of the resistor R1; the source of the switch Q1 is connected to the other end of the resistor R1; the drain of the switch Q1 is connected to one end of the inductor L1; the other end of the inductor L1 is connected to one end of the inductor L2 and the output terminal of the cascaded switch unit; the other end of the inductor L2 is connected to the output terminal of the cascaded switch unit and the input terminal of the output unit.

[0010] A further technical solution is as follows: the output unit includes a switch Q26, a resistor R26, an inductor L3, and an inductor L4; one end of the inductor L3 is connected to the other end of the inductor L2 and the output terminal of the cascaded switch unit; the other end of the inductor L3 is connected to one end of the inductor L4 and the output terminal of the cascaded switch unit; the other end of the inductor L4 is connected to the drain of the switch Q26; the gate of the switch Q26 is connected to one end of the resistor R26; and the source of the switch Q26 is connected to the other end of the resistor R26.

[0011] A further technical solution is as follows: the cascaded switch unit includes a first cascaded circuit; the first cascaded circuit includes resistors R2, R3, R4, R5, R6, R7, R8, and R9, and switching transistors Q2, Q3, Q4, Q5, Q6, Q7, Q8, and Q9; one end of each of resistors R2, R3, R4, R5, R6, R7, R8, and R9 is connected to the other end of resistor R2; the other end of resistor R2 is connected to the gate of switching transistor Q2; the other end of resistor R3 is connected to the gate of switching transistor Q3; the other end of resistor R4 is connected to the gate of switching transistor Q4; and the other end of resistor R5 is connected to the gate of switching transistor Q5. The other end of resistor R6 is connected to the gate of switch Q6; the other end of resistor R7 is connected to the gate of switch Q7; the other end of resistor R8 is connected to the gate of switch Q8; the other end of resistor R9 is connected to the gate of switch Q9; the drain of switch Q2 is connected to GND, and the source of switch Q2 is connected to the drain of switch Q3; the source of switch Q3 is connected to the drain of switch Q4; the source of switch Q4 is connected to the drain of switch Q5; the source of switch Q5 and the drain of switch Q6 are both connected to the other end of inductor L1; the source of switch Q6 is connected to the drain of switch Q7; the source of switch Q7 is connected to the drain of switch Q8; the source of switch Q8 is connected to the drain of switch Q9; the source of switch Q9 is connected to GND.

[0012] A further technical solution is as follows: the cascaded switching unit includes a second cascaded circuit; the second cascaded circuit includes resistors R10, R11, R12, R13, R14, R15, R16, and R17, and switching transistors Q10, Q11, Q12, Q13, Q14, Q15, Q16, and Q17; one end of resistor R10, one end of resistor R11, and one end of resistor R17 are described. One end of resistors R12, R13, R14, R15, R16, and R17 are all connected to the other end of resistor R29; the other end of resistor R10 is connected to the gate of switch Q10; the other end of resistor R11 is connected to the gate of switch Q11; the other end of resistor R12 is connected to the gate of switch Q12; the other end of resistor R13 is connected to the gate of switch Q13; the other end of resistor R14 is connected to the gate of switch Q14; the other end of resistor R15 is connected to the gate of switch Q15; the other end of resistor R16 is connected to the gate of switch Q16; the other end of resistor R17 is connected to the gate of switch Q17; the drain of switch Q10 is connected to GND, and the source of switch Q10 is connected to the drain of switch Q11; the source of switch Q11 is connected to the drain of switch Q11. The drain of transistor Q12 is connected; the source of transistor Q12 is connected to the drain of transistor Q13; the source of transistor Q13 and the drain of transistor Q14 are both connected to the other end of inductor L2; the source of transistor Q14 is connected to the drain of transistor Q15; the source of transistor Q15 is connected to the drain of transistor Q16; the source of transistor Q16 is connected to the drain of transistor Q17; the source of transistor Q17 is connected to GND.

[0013] A further technical solution is as follows: the cascaded switching unit includes a third cascaded circuit; the third cascaded circuit includes resistors R18, R19, R20, R21, R22, R23, R24, and R25, and switching transistors Q18, Q19, Q20, Q21, Q22, Q23, Q24, and Q25; one end of resistor R18, one end of resistor R19, and one end of resistor R25 are connected. One end of resistors R20, R21, R22, R23, R24, and R25 are all connected to the other end of resistor R29; the other end of resistor R18 is connected to the gate of switch Q18; the other end of resistor R19 is connected to the gate of switch Q19; the other end of resistor R20 is connected to the gate of switch Q20; the other end of resistor R21 is connected to the gate of switch Q21; the other end of resistor R22 is connected to the gate of switch Q22; the other end of resistor R23 is connected to the gate of switch Q23; the other end of resistor R24 ​​is connected to the gate of switch Q24; the other end of resistor R25 is connected to the gate of switch Q25; the drain of switch Q18 is connected to GND, and the source of switch Q18 is connected to the drain of switch Q19; the source of switch Q19 is connected to the gate of switch Q18. The drain of switching transistor Q20 is connected; the source of switching transistor Q20 is connected to the drain of switching transistor Q21; the source of switching transistor Q21 and the drain of switching transistor Q22 are both connected to the other end of inductor L3; the source of switching transistor Q22 is connected to the drain of switching transistor Q23; the source of switching transistor Q23 is connected to the drain of switching transistor Q24; the source of switching transistor Q24 is connected to the drain of switching transistor Q25; the source of switching transistor Q25 is connected to GND.

[0014] Compared with the prior art, the beneficial effects of the present invention are:

[0015] By introducing a voltage conversion module, good low-frequency characteristics under positive voltage control are achieved. Simultaneously, temperature compensation through the voltage conversion module ensures low-temperature drift characteristics of the voltage-controlled attenuator. Attached Figure Description

[0016] Figure 1 This is a circuit topology diagram of an attenuation module for a positive pressure controlled voltage-controlled attenuator in this embodiment;

[0017] Figure 2 This is a circuit topology diagram of a voltage conversion module for a positive voltage controlled voltage attenuator in this embodiment;

[0018] Figure 3This is a schematic diagram showing the correspondence between the external positive control voltage and the output voltage of the voltage conversion module for a positive voltage controlled attenuator in this embodiment.

[0019] Figure 4 This is a schematic diagram of the insertion loss of a positive voltage-controlled attenuator as a function of frequency in this embodiment.

[0020] Figure 5 This is a schematic diagram of the temperature characteristic curve of a positive pressure controlled voltage attenuator in this embodiment;

[0021] Figure 6 This is a schematic diagram of the power characteristic curve of a positive pressure controlled voltage attenuator in this embodiment. Detailed Implementation

[0022] The invention will now be further described with reference to the accompanying drawings.

[0023] Example: This example provides a positive pressure controlled voltage attenuator, such as... Figures 1-6 As shown, the device includes a voltage conversion module and an attenuation module. The voltage conversion module includes a first voltage divider unit and a second voltage divider unit. The first input terminal of the first voltage divider unit is used to connect to an external positive control voltage, and the second input terminal of the second voltage divider unit is used to connect to a conversion power supply. The output terminal of the first voltage divider unit is connected to the input terminal of the second voltage divider unit. The attenuation module includes a cascaded switch unit, an input unit, and an output unit. The input terminal of the cascaded switch unit is connected to the output terminal of the second voltage divider unit, and the input terminal of the output unit is connected to both the output terminal of the cascaded switch unit and the output terminal of the input unit.

[0024] In this embodiment, the first voltage divider unit includes a resistor R27, diodes D1, D2, D3, D4, and a resistor R28. One end of the resistor R27 is connected to an external positive control voltage. The other end of the resistor R27 is connected to the anode of diode D1. The cathode of diode D1 is connected to the anode of diode D2. The cathode of diode D2 is connected to the anode of diode D3. The cathode of diode D3 is connected to the anode of diode D4. The cathode of diode D4 and one end of the resistor R28 are both connected to the second voltage divider unit. The other end of the resistor R28 is connected to a conversion power supply.

[0025] In this embodiment, the second voltage divider unit includes resistor R29 and resistor R30; one end of resistor R29 is connected to the negative terminal of diode D4 and one end of resistor R28; the other end of resistor R29 is connected to one end of resistor R30 and the input terminal of the cascaded switch unit; the other end of resistor R30 is connected to GND.

[0026] In this embodiment, the input unit includes a switch Q1, a resistor R1, an inductor L1, and an inductor L2; the gate of the switch Q1 is connected to one end of the resistor R1; the source of the switch Q1 is connected to the other end of the resistor R1; the drain of the switch Q1 is connected to one end of the inductor L1; the other end of the inductor L1 is connected to one end of the inductor L2 and the output terminal of the cascaded switch unit; the other end of the inductor L2 is connected to the output terminal of the cascaded switch unit and the input terminal of the output unit.

[0027] In this embodiment, the output unit includes a switch Q26, a resistor R26, an inductor L3, and an inductor L4; one end of the inductor L3 is connected to the other end of the inductor L2 and the output terminal of the cascaded switch unit; the other end of the inductor L3 is connected to one end of the inductor L4 and the output terminal of the cascaded switch unit; the other end of the inductor L4 is connected to the drain of the switch Q26; the gate of the switch Q26 is connected to one end of the resistor R26; and the source of the switch Q26 is connected to the other end of the resistor R26.

[0028] In this embodiment, the cascaded switch unit includes a first cascaded circuit; the first cascaded circuit includes resistors R2, R3, R4, R5, R6, R7, R8, and R9, and switching transistors Q2, Q3, Q4, Q5, Q6, Q7, Q8, and Q9; one end of each of resistors R2, R3, R4, R5, R6, R7, R8, and R9 is connected to the other end of resistor R2; the other end of resistor R2 is connected to the gate of switching transistor Q2; the other end of resistor R3 is connected to the gate of switching transistor Q3; the other end of resistor R4 is connected to the gate of switching transistor Q4; and the other end of resistor R5 is connected to the gate of switching transistor Q5. The other end of resistor R6 is connected to the gate of switch Q6; the other end of resistor R7 is connected to the gate of switch Q7; the other end of resistor R8 is connected to the gate of switch Q8; the other end of resistor R9 is connected to the gate of switch Q9; the drain of switch Q2 is connected to GND, and the source of switch Q2 is connected to the drain of switch Q3; the source of switch Q3 is connected to the drain of switch Q4; the source of switch Q4 is connected to the drain of switch Q5; the source of switch Q5 and the drain of switch Q6 are both connected to the other end of inductor L1; the source of switch Q6 is connected to the drain of switch Q7; the source of switch Q7 is connected to the drain of switch Q8; the source of switch Q8 is connected to the drain of switch Q9; the source of switch Q9 is connected to GND.

[0029] In this embodiment, the cascaded switch unit includes a second cascaded circuit; the second cascaded circuit includes resistors R10, R11, R12, R13, R14, R15, R16, and R17, and switching transistors Q10, Q11, Q12, Q13, Q14, Q15, Q16, and Q17; one end of resistor R10, one end of resistor R11, and one end of resistor R12... One end of resistor R11, one end of resistor R12, one end of resistor R13, one end of resistor R14, one end of resistor R15, one end of resistor R16, and one end of resistor R17 are all connected to the other end of resistor R29; the other end of resistor R10 is connected to the gate of switch Q10; the other end of resistor R11 is connected to the gate of switch Q11; the other end of resistor R12 is connected to the gate of switch Q12; the other end of resistor R13 is connected to the gate of switch Q13; the other end of resistor R14 is connected to the gate of switch Q14; the other end of resistor R15 is connected to the gate of switch Q15; the other end of resistor R16 is connected to the gate of switch Q16; the other end of resistor R17 is connected to the gate of switch Q17; the drain of switch Q10 is connected to GND, and the source of switch Q10 is connected to the drain of switch Q11; the source of switch Q11 is connected to the drain of switch Q11. The drain of transistor Q12 is connected; the source of transistor Q12 is connected to the drain of transistor Q13; the source of transistor Q13 and the drain of transistor Q14 are both connected to the other end of inductor L2; the source of transistor Q14 is connected to the drain of transistor Q15; the source of transistor Q15 is connected to the drain of transistor Q16; the source of transistor Q16 is connected to the drain of transistor Q17; the source of transistor Q17 is connected to GND.

[0030] In this embodiment, the cascaded switch unit includes a third cascaded circuit; the third cascaded circuit includes resistors R18, R19, R20, R21, R22, R23, R24, and R25, and switching transistors Q18, Q19, Q20, Q21, Q22, Q23, Q24, and Q25; one end of resistor R18, one end of resistor R19, and one end of resistor R20... One end of resistor R21, one end of resistor R22, one end of resistor R23, one end of resistor R24, and one end of resistor R25 are all connected to the other end of resistor R29; the other end of resistor R18 is connected to the gate of switch Q18; the other end of resistor R19 is connected to the gate of switch Q19; the other end of resistor R20 is connected to the gate of switch Q20; the other end of resistor R21 is connected to the gate of switch Q21; the other end of resistor R22 is connected to the gate of switch Q22; the other end of resistor R23 is connected to the gate of switch Q23; the other end of resistor R24 ​​is connected to the gate of switch Q24; the other end of resistor R25 is connected to the gate of switch Q25; the drain of switch Q18 is connected to GND, and the source of switch Q18 is connected to the drain of switch Q19; the source of switch Q19 is connected to the drain of switch Q19. The drain of transistor Q20 is connected; the source of transistor Q20 is connected to the drain of transistor Q21; the source of transistor Q21 and the drain of transistor Q22 are both connected to the other end of inductor L3; the source of transistor Q22 is connected to the drain of transistor Q23; the source of transistor Q23 is connected to the drain of transistor Q24; the source of transistor Q24 is connected to the drain of transistor Q25; the source of transistor Q25 is connected to GND.

[0031] This embodiment provides the working principle of a voltage-controlled attenuator with positive pressure control:

[0032] The power supply is converted to -5V. When an external positive control signal of 0V to +5V is input, the voltage conversion circuit performs a first voltage division using resistor R27, diodes D1, D2, D3, D4, and resistor R28 in the first voltage divider unit, converting the positive control voltage VC to a negative voltage. The negative control voltage VC is then divided by resistors R29 and R30 in the second voltage divider unit to adjust the range of the control voltage VC, achieving the -1.5V to 0V voltage required by the switching transistors in the cascaded switching unit of the output RF section. In the attenuation module, the gate of the switching transistor Q1 in the input unit is shorted to its source through resistor R1, and the gate of the switching transistor Q26 in the output unit is shorted to its source through resistor R26. This ensures that the gate voltage of both transistors Q1 and Q26 is always 0V, keeping them in a constant conducting state. The input and output units are equivalent to a small resistor, allowing the signal to pass directly. When the gate voltage of each switch in the cascaded switching unit is 0V, the cascaded switching unit is in the ON state, and the cascaded switching unit is equivalent to a small resistor. The RF signal is short-circuited to ground through the ON switch in the cascaded switching unit, and the output port can only receive a small signal. At this time, the voltage-controlled attenuator under positive voltage control is in the maximum attenuation state. When the gate voltage of each switch in the cascaded switching unit is -1.5V, all switches in the cascaded switching unit are in the OFF state, and the cascaded switching unit is equivalent to a capacitor. Therefore, the attenuation module can be regarded as a multi-stage LC low-pass filter network, and the signal can pass through the attenuation module completely. At this time, the voltage-controlled attenuator under positive voltage control is in the OFF state. Under minimum insertion loss conditions, when the gate voltages of the switching transistors in the cascaded switching unit are in the range of -1.5V to 0V, the switching transistors in the cascaded switching unit are in the variable resistance region. The cascaded switching unit is equivalent to a variable resistor whose resistance value is controlled by the voltage magnitude. The signal magnitude reaching the output port depends on the gate voltage of the switching transistors in the cascaded switching unit. The closer the gate voltage of the switching transistors in the cascaded switching unit is to 0V, the smaller the equivalent resistance and the smaller the output signal. The closer the gate voltage of the switching transistors in the cascaded switching unit is to -1.5V, the larger the equivalent resistance and the larger the output signal, ultimately achieving the voltage-controlled attenuation function. The resistance provided by the always-conducting series switching transistors Q1 and Q26 ensures that the attenuation module maintains good standing wave characteristics. Combined with the voltage conversion module, a voltage-controlled attenuator with low temperature drift and positive voltage control is finally realized.

[0033] Compared to existing voltage-controlled attenuators, the positive-voltage controlled attenuator in this embodiment introduces a voltage conversion module, achieving low-frequency characteristics under positive voltage control. Furthermore, due to adjustments in the temperature characteristics of the voltage conversion module, the temperature drift of this positive-voltage controlled attenuator is extremely low. Regarding the RF attenuator, the parallel-connected grounded switches in the cascaded switching unit are stacked to handle and withstand greater input power. Simultaneously, multiple sets of parallel switches are connected in series, and a series inductor for matching is added between each set of switches. By selecting appropriate switch sizes and matching inductor values, the frequency can be extended to higher frequencies, ultimately achieving a positive-voltage controlled attenuator with low temperature drift and wide bandwidth characteristics.

[0034] like Figure 1As shown, the switching transistor Q1 in the input unit and the switching transistor Q26 in the output unit of the attenuation module both have a size of 4*45um. The gate of switching transistor Q1 is shorted to the source of switching transistor Q1 through resistor R1, and the gate of switching transistor Q26 is shorted to the source of switching transistor Q26 through resistor R26. The cascaded switching units in the attenuation module contain switching transistors (Q2, Q3, Q4, Q5, Q6, Q7, Q8, Q9, Q10, Q11, Q12, ...). The transistors Q13, Q14, Q15, Q16, Q17, Q18, Q19, Q20, Q21, Q22, Q23, Q24, and Q25 are all 6*70um in size. The gates of each transistor in the cascaded switching unit are connected to resistors (R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12, R...). 13. Resistors R14, R15, R16, R17, R18, R19, R20, R21, R22, R23, R24, and R25 are collected and connected to the output of the voltage conversion module; the gate resistors of each switch transistor in the attenuation module (resistors R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12, R13, and R14) are connected to the output of the voltage conversion module. The resistance values ​​of resistors R15, R16, R17, R18, R19, R20, R21, R22, R23, R24, R25, and R26 are all 20KΩ. The first, second, and third cascade circuits are all composed of multiple stacked switching transistors, and the first, second, and third cascade circuits are connected in series through inductors (inductor L2 and inductor L3). The inductance values ​​of inductors L2 and L3 are in the range of 0.1nH to 0.5nH.

[0035] like Figure 2 As shown, a resistor R27, diodes D1, D2, D3, D4 and resistor R28 are connected in series between the conversion power supply (-5V power supply) and the external positive control voltage. The voltage taken from the junction of diode D4 and resistor R28 is then divided by resistors R29 and R30 to achieve the voltage output, which is supplied to the attenuation circuit.

[0036] When an external positive control signal of 0V to +5V is input, the correspondence between the external positive control voltage (input control voltage) and the output voltage (control voltage VC) of the voltage conversion module is as follows: Figure 3 As shown, by Figure 3It can be seen that, through the voltage conversion module, the positive voltage of the external positive control voltage is converted into the negative voltage required by the switching transistor in the attenuation module, and the voltage conversion relationship is linear, thus making the voltage and the final attenuation exhibit a linear correlation characteristic; when a small signal power of -20dBm is input to the input port of the attenuation module, the following is obtained: Figure 4 The curve shown represents the insertion loss of a voltage-controlled attenuator with positive voltage control as a function of frequency. The horizontal axis represents frequency in GHz, and the vertical axis represents the S21 insertion loss in dB. Figure 4 It can be seen that within the 9K~20GHz range, the average attenuation is above 30dB, and the typical ground-state insertion loss is 4dB. Simultaneously, the following results were obtained... Figure 5 The temperature characteristic curve shown is represented by the control voltage VC on the horizontal axis and the insertion loss value on the vertical axis. Figure 5 It can be seen that under different external positive control voltages, the insertion loss of the three temperatures varies within a small range. When the input power at the input port of the attenuation module is large, the relationship between insertion loss and input power is tested, and the results are as follows: Figure 6 The power characteristic curve shown is represented by the following: the horizontal axis represents the input power, and the vertical axis represents the insertion loss. Figure 6 It can be seen that the positive pressure controlled attenuator in this embodiment achieves good broadband and temperature characteristics under positive pressure control.

[0037] The positive pressure controlled voltage attenuator in this embodiment has at least the following beneficial effects:

[0038] 1. By introducing a voltage conversion module, good low-frequency characteristics under positive voltage control are achieved.

[0039] 2. By using temperature compensation in the voltage conversion module, the low-temperature drift characteristic of the voltage-controlled attenuator is achieved.

[0040] 3. The power performance of the attenuator is improved by stacking multiple sets of stacked switching transistors (cascaded switching units).

[0041] Although the invention has been described herein with reference to several illustrative embodiments, it should be understood that many other modifications and implementations can be devised by those skilled in the art, which will fall within the scope and spirit of the principles disclosed herein. More specifically, various variations and modifications can be made to the components and / or layout of the subject matter arrangement within the scope of the disclosure, drawings, and claims. Besides variations and modifications to the components and / or layout, other uses will be apparent to those skilled in the art.

Claims

1. A positive pressure controlled voltage-controlled attenuator, characterized in that, include: A voltage conversion module includes a first voltage divider unit and a second voltage divider unit. The first input terminal of the first voltage divider unit is used to connect to an external positive control voltage, and the second input terminal of the second voltage divider unit is used to connect to a conversion power supply. The output terminal of the first voltage divider unit is connected to the input terminal of the second voltage divider unit. The attenuation module includes a cascaded switch unit, an input unit, and an output unit. The input terminal of the cascaded switch unit is connected to the output terminal of the second voltage divider unit, and the input terminal of the output unit is connected to both the output terminal of the cascaded switch unit and the output terminal of the input unit.

2. The voltage-controlled attenuator according to claim 1, characterized in that: The first voltage divider unit includes a resistor R27, a diode D1, a diode D2, a diode D3, a diode D4, and a resistor R28; One end of the resistor R27 is used to connect to an external positive control voltage; The other end of the resistor R27 is connected to the positive terminal of the diode D1; The negative terminal of diode D1 is connected to the positive terminal of diode D2; The negative terminal of diode D2 is connected to the positive terminal of diode D3; The negative terminal of diode D3 is connected to the positive terminal of diode D4; The negative terminal of diode D4 and one end of resistor R28 are both connected to the second voltage divider unit; The other end of the resistor R28 is used to connect to the conversion power supply.

3. The voltage-controlled attenuator according to claim 2, characterized in that: The second voltage divider unit includes resistor R29 and resistor R30; One end of the resistor R29 is connected to the negative terminal of the diode D4 and one end of the resistor R28; The other end of resistor R29 is connected to one end of resistor R30 and the input terminal of the cascaded switch unit. The other end of the resistor R30 is connected to GND.

4. The voltage-controlled attenuator according to claim 3, characterized in that: The input unit includes a switch Q1, a resistor R1, an inductor L1, and an inductor L2; The gate of the switch Q1 is connected to one end of the resistor R1; The source of the switching transistor Q1 is connected to the other end of the resistor R1; The drain of the switching transistor Q1 is connected to one end of the inductor L1; The other end of the inductor L1 is connected to one end of the inductor L2 and the output terminal of the cascaded switch unit; The other end of the inductor L2 is connected to both the output terminal of the cascaded switch unit and the input terminal of the output unit.

5. The voltage-controlled attenuator according to claim 4, characterized in that: The output unit includes a switch Q26, a resistor R26, an inductor L3, and an inductor L4; One end of the inductor L3 is connected to the other end of the inductor L2 and the output terminal of the cascaded switch unit; The other end of the inductor L3 is connected to one end of the inductor L4 and the output terminal of the cascaded switch unit. The other end of the inductor L4 is connected to the drain of the switching transistor Q26; The gate of the switch Q26 is connected to one end of the resistor R26; The source of the switching transistor Q26 is connected to the other end of the resistor R26.

6. The voltage-controlled attenuator according to claim 5, characterized in that: The cascaded switch unit includes a first cascaded circuit; The first cascaded circuit includes resistors R2, R3, R4, R5, R6, R7, R8, and R9, as well as switching transistors Q2, Q3, Q4, Q5, Q6, Q7, Q8, and Q9. One end of resistor R2, one end of resistor R3, one end of resistor R4, one end of resistor R5, one end of resistor R6, one end of resistor R7, one end of resistor R8, and one end of resistor R9 are all connected to the other end of resistor R29. The other end of resistor R2 is connected to the gate of switch Q2; the other end of resistor R3 is connected to the gate of switch Q3; the other end of resistor R4 is connected to the gate of switch Q4; the other end of resistor R5 is connected to the gate of switch Q5; the other end of resistor R6 is connected to the gate of switch Q6; the other end of resistor R7 is connected to the gate of switch Q7; the other end of resistor R8 is connected to the gate of switch Q8; and the other end of resistor R9 is connected to the gate of switch Q9. The drain of switch Q2 is connected to GND, and the source of switch Q2 is connected to the drain of switch Q3; the source of switch Q3 is connected to the drain of switch Q4; the source of switch Q4 is connected to the drain of switch Q5; the source of switch Q5 and the drain of switch Q6 are both connected to the other end of inductor L1; the source of switch Q6 is connected to the drain of switch Q7; the source of switch Q7 is connected to the drain of switch Q8; the source of switch Q8 is connected to the drain of switch Q9; and the source of switch Q9 is connected to GND.

7. The voltage-controlled attenuator according to claim 6, characterized in that: The cascaded switch unit includes a second cascaded circuit; The second cascaded circuit includes resistors R10, R11, R12, R13, R14, R15, R16, and R17, as well as switching transistors Q10, Q11, Q12, Q13, Q14, Q15, Q16, and Q17. One end of resistor R10, one end of resistor R11, one end of resistor R12, one end of resistor R13, one end of resistor R14, one end of resistor R15, one end of resistor R16, and one end of resistor R17 are all connected to the other end of resistor R29. The other end of resistor R10 is connected to the gate of switch Q10; the other end of resistor R11 is connected to the gate of switch Q11; the other end of resistor R12 is connected to the gate of switch Q12; the other end of resistor R13 is connected to the gate of switch Q13; the other end of resistor R14 is connected to the gate of switch Q14; the other end of resistor R15 is connected to the gate of switch Q15; the other end of resistor R16 is connected to the gate of switch Q16; and the other end of resistor R17 is connected to the gate of switch Q17. The drain of switch Q10 is connected to GND, and the source of switch Q10 is connected to the drain of switch Q11; the source of switch Q11 is connected to the drain of switch Q12; the source of switch Q12 is connected to the drain of switch Q13; the source of switch Q13 and the drain of switch Q14 are both connected to the other end of inductor L2; the source of switch Q14 is connected to the drain of switch Q15; the source of switch Q15 is connected to the drain of switch Q16; the source of switch Q16 is connected to the drain of switch Q17; and the source of switch Q17 is connected to GND.

8. The voltage-controlled attenuator according to claim 7, characterized in that: The cascaded switch unit includes a third cascaded circuit; The third cascaded circuit includes resistors R18, R19, R20, R21, R22, R23, R24, and R25, as well as switching transistors Q18, Q19, Q20, Q21, Q22, Q23, Q24, and Q25. One end of resistor R18, one end of resistor R19, one end of resistor R20, one end of resistor R21, one end of resistor R22, one end of resistor R23, one end of resistor R24, and one end of resistor R25 are all connected to the other end of resistor R29. The other end of resistor R18 is connected to the gate of switch Q18; the other end of resistor R19 is connected to the gate of switch Q19; the other end of resistor R20 is connected to the gate of switch Q20; the other end of resistor R21 is connected to the gate of switch Q21; the other end of resistor R22 is connected to the gate of switch Q22; the other end of resistor R23 is connected to the gate of switch Q23; the other end of resistor R24 ​​is connected to the gate of switch Q24; and the other end of resistor R25 is connected to the gate of switch Q25. The drain of switch Q18 is connected to GND, and the source of switch Q18 is connected to the drain of switch Q19; the source of switch Q19 is connected to the drain of switch Q20; the source of switch Q20 is connected to the drain of switch Q21; the source of switch Q21 and the drain of switch Q22 are both connected to the other end of inductor L3; the source of switch Q22 is connected to the drain of switch Q23; the source of switch Q23 is connected to the drain of switch Q24; the source of switch Q24 is connected to the drain of switch Q25; and the source of switch Q25 is connected to GND.

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