A high-g MOEMS optical switch device with a through optical path alignment structure

Abstract

The application discloses a kind of high overload resistance MOEMS optical switch device of straight-through optical path alignment structure, belong to micro-optical-mechanical-electrical system technical field.The device includes tube shell, MOEMS optical switch chip, glass cover plate, connecting lead and metal pin foot.MOEMS optical switch chip is three-layer composite structure, integrated with electrode, V-shaped electrothermal actuator, optical path isolation silicon wafer, optical fiber fixing buckle and backplate support structure on it;Glass cover plate is bonded on the upper surface of chip, cooperates with optical fiber positioning structure to form optical fiber fixing cavity, realizes the bidirectional positioning and fixing of input and output optical fiber;Tube shell is made of Kovar alloy material.The application realizes straight-through optical path alignment type on-off control by the integrated design of V-shaped electrothermal actuator and optical path isolation silicon wafer, improves optical path transmission efficiency;By backplate support structure and glass cover plate jointly constitute double limiting protection mechanism, limit the over-limit displacement of silicon-based actuator when bearing high overload impact, prevent structural plastic deformation or fracture, significantly improve the reliability and anti-overload capacity of device in high overload extreme mechanical environment.

Description

Technical Field

[0001] This invention belongs to the field of micro-opto-electro-mechanical systems (MOEMS) technology, specifically relating to a high-overload resistant MOEMS optical switch device with a straight-through optical path alignment structure. Background Technology

[0002] MOEMS optical switches are miniature optical devices that control the on / off state of optical paths based on micro-opto-electro-mechanical systems (MEMS). They mainly consist of a MOEMS chip and an external packaging structure. MOEMS optical switches control the on / off state of the fiber optic path through micro-actuators, thus enabling or blocking the input and output optical signals. They offer advantages such as small size, fast response, and strong resistance to electromagnetic interference, making them valuable for applications in laser fuze safety systems.

[0003] Existing optical switch technologies mainly include mechanical optical switches, waveguide optical switches, and MOEMS optical switches. Mechanical optical switches have good overload resistance, but they are large in size and have limited control precision, limiting their application scenarios. Waveguide optical switches have certain advantages in scalability, consistency, and electromagnetic interference resistance, but their structure is relatively complex, with numerous wiring connections, and they pose a risk of electromagnetic interference. In contrast, MOEMS optical switches, manufactured using semiconductor processes, can be mass-produced at low cost on a single substrate using semiconductor technology, while also enabling precise control of minute dimensions.

[0004] However, in extreme environments such as military and aerospace applications, optical switches often need to withstand significant impact loads, high overloads, and strong vibrations. For MOEMS optical switches, when external loads exceed the bearing capacity of their internal microstructures, the microstructures are prone to fracture, damage, or detachment, leading to optical path misalignment, jamming, or switch failure, thus affecting the reliability and safety of the entire system. Therefore, improving the structural strength and high overload resistance of MOEMS optical switch chips has become a key issue that needs to be addressed when applying them in these extreme environments.

[0005] In the prior art, Chinese authorized patents CN109932782B and CN218767409U disclose a microelectromechanical system (MEMS) based on a fiber optic MOEMS optical switch. The switching of this optical switch is achieved by a V-shaped actuator driving the translation of a movable micromirror. The optical path is switched on and off using a plug-in reflective structure composed of an input fiber, an output fiber, and a movable micromirror. This solution helps improve the integration and miniaturization of the MEMS safety system. However, its system uses a reflective optical path for optical transmission, resulting in low optical coupling efficiency. Furthermore, when transmitting high-power laser signals, the silicon-based micromirror is prone to ablation under high-power laser conditions, making stable optical transmission impossible. Additionally, the system lacks high overload resistance design, making it susceptible to structural damage and functional loss under extreme environments.

[0006] Chinese patent CN113204079B discloses a high-overload resistant structure for MOEMS optical switches and its design method. This scheme designs the MOEMS optical switch substrate as a cavity beam structure. When the MOEMS optical switch is subjected to a high overload impact perpendicular to the chip direction, the substrate layer, through the support of the beam structure, dissipates the impact energy received by the movable micromirror and confines it to a lower limit position, thereby preventing structural fracture due to excessive deformation. However, this scheme only has unidirectional limiting protection capability and lacks protection when subjected to reverse loads, making it difficult to cope with complex overload and strong vibration conditions. Furthermore, this optical switch also employs a reflective optical path, thus leaving considerable room for improvement. Summary of the Invention

[0007] To address the shortcomings of existing MOEMS optical switches, such as the easy failure of movable structure breakage, jamming, or optical path misalignment under high overload impact conditions, and the inability to simultaneously meet the dual requirements of high overload resistance and optical path transmission efficiency under extreme operating conditions, this invention aims to provide a high overload resistant MOEMS optical switch device with a through-through optical path alignment structure, which can balance excellent high overload resistance and optical path transmission efficiency.

[0008] This invention employs a direct-alignment optical path and uses an electrothermal actuator to achieve on / off control of the direct-alignment optical path, effectively improving the optical path transmission efficiency. Through the integrated design of the V-shaped electrothermal actuator-optical path isolation silicon wafer structure, the dual limit protection design, and the optical fiber fixing design, it achieves excellent resistance to high overload performance.

[0009] The specific technical solution is as follows: A high-overload resistant MOEMS optical switch device with a straight-through optical path alignment structure includes a housing, an MOEMS optical switch chip, a glass cover, metal pins, and gold wires.

[0010] The MOEMS optical switch chip has a three-layer composite structure, integrating electrodes, a V-shaped electrothermal actuator, an optical path isolation silicon wafer, an optical fiber positioning structure, and a protective support structure. The V-shaped electrothermal actuator and the optical path isolation silicon wafer are integrated, with the silicon wafer located on the optical path between the input and output optical fibers to control the on / off state of the optical path. The protective support structure is located on the vertical working surface of the V-shaped electrothermal actuator, used to limit excessive displacement of the actuator under overload conditions and provide support.

[0011] The glass cover is bonded to the upper surface of the MOEMS optical switch chip, and cooperates with the optical fiber positioning structure on the chip to form an optical fiber fixing cavity, realizing bidirectional positioning and fixing of the input and output optical fibers. The glass cover has electrode wiring holes and optical fiber observation holes.

[0012] The casing is made of high-strength metal material. Optical fiber through-holes are provided on the sidewalls of the casing corresponding to the optical fiber positioning structure, and lead wire mounting holes are provided at the bottom. The metal leads are fixed to the lead wire mounting holes in the casing using an insulating sintering process, and a protective plating layer is provided on the surface of the metal leads.

[0013] The gold wire is connected between the electrodes and metal pins of the MOEMS optical switch chip, forming a power supply circuit for the V-shaped electrothermal actuator.

[0014] Furthermore, the input and output optical fibers are arranged in a straight-through aligned optical path. When the V-type electrothermal actuator is not powered on, the optical isolation silicon chip is located in the straight-through optical path between the input and output optical fibers, completely blocking the optical signal, and the optical switch is in the off state. When the V-type electrothermal actuator is powered on and heated, the actuator generates a displacement perpendicular to the chip plane using the Joule heating effect, causing the optical isolation silicon chip to move out of the optical path, and the optical signal from the input fiber is directly transmitted to the output fiber, and the optical switch is in the on state. When the power is stopped, the V-type electrothermal actuator cools and contracts, and the elastic restoring force causes the optical isolation silicon chip to reset into the optical path, and the optical switch returns to the off state.

[0015] Furthermore, the protective support structure and the glass cover together constitute a dual limiting protection structure for the V-shaped electrothermal actuator. When subjected to high overload impact perpendicular to the chip plane, the protective support structure restricts the V-shaped electrothermal actuator's excessive downward displacement, while the glass cover restricts its excessive upward displacement. Together, they limit the actuator's deformation range to within the elastic deformation range, preventing plastic deformation or breakage.

[0016] Furthermore, the casing is made of Kovar alloy and its surface is blackened to form an anti-reflective coating. The surface of the metal leads is hot-dip tin-plated to form an insulating protective coating. The casing and the metal leads are insulated and sealed using a glass sintering process.

[0017] Furthermore, the fiber optic through-hole on the side wall of the tube shell also serves as a mounting and fixing hole for mechanically connecting the optical switch device to an external system.

[0018] Compared with the prior art, the present invention has the following beneficial effects:

[0019] The integrated design of the V-shaped electric heating actuator and the optical path isolation silicon wafer results in a compact structure, fast response speed, and high reliability of optical path switching.

[0020] By employing a dual limiting protection mechanism formed by the protective support structure and the glass cover, excessive displacement of the micro-actuator under high overload impact is effectively limited, significantly improving the device's resistance to high overload and enabling it to adapt to extreme application environments in the military and aerospace fields.

[0021] By employing a direct-through optical path alignment design, the input and output optical fibers are directly coupled, which improves the optical path transmission efficiency of the optical switch.

[0022] In summary, this invention achieves a balance between high overload resistance and high optical path transmission efficiency. Attached Figure Description

[0023] Figure 1 This is a schematic diagram of the overall assembly of the MOEMS optical switch device according to an embodiment of the present invention.

[0024] Figure 1 The components are: 1. Kovar alloy casing; 2. MOEMS optical switch chip; 3. Glass cover plate; 4. Metal pins; 5. Gold wire.

[0025] Figure 2 This is a schematic diagram of the Kovar alloy encapsulation casing according to an embodiment of the present invention.

[0026] Figure 2 The components are Kovar alloy tube shell 1-1, optical fiber through hole 1-2, metal pin mounting hole 1-3, and MOEMS chip mounting cavity 1-4, respectively.

[0027] Figure 3 This is a schematic diagram of the MOEMS optical switch chip according to an embodiment of the present invention.

[0028] Figure 3 The components are: V-type electrothermal actuator electrode 2-1, protective support structure 2-2, V-type electrothermal actuator 2-3, fiber optic limiting block 2-4, optical path isolation silicon wafer 2-5, fiber optic slot 2-6, front side of MOEMS optical switch chip 2-7, and back side of MOEMS optical switch chip 2-8.

[0029] Figure 4 This is a schematic diagram of the glass cover plate of the MOEMS optical switch chip according to an embodiment of the present invention.

[0030] Figure 4 The components are, respectively, glass cover plate 3-1, optical fiber assembly notch 3-2, electrode hole 3-3, optical fiber observation hole 3-4, and actuator moving cavity 3-5. Detailed Implementation

[0031] To make the objectives, technical solutions, and advantages of this invention clearer and easier to understand, the following description is provided in conjunction with the appendix. Figure 1-4 The present invention will be further described in detail below with reference to specific embodiments. The specific embodiments described herein are for illustrative purposes only and are not intended to limit the specific embodiments disclosed herein.

[0032] Example 1

[0033] like Figure 1 As shown, this embodiment provides a high-overload resistant MOEMS optical switch device with a through-path alignment structure, which mainly consists of a Kovar alloy housing 1, an MOEMS optical switch chip 2, a glass cover plate 3, metal pins 4, and gold wires 5.

[0034] The Kovar alloy housing 1 is made of Kovar alloy material with a blackened surface. In this embodiment, the overall dimensions of the housing are 10mm × 5.5mm × 3mm, the internal chip mounting cavity dimensions are 9mm × 3mm, the sidewall thickness is 0.7mm, the lead mounting window thickness is 1mm, and the bottom thickness is 0.5mm. The diameter of the fiber optic vias 1-2 is designed to be 1mm to ensure sufficient tolerance for fiber optic assembly after the MOEMS chip is bonded to the housing.

[0035] The MOEMS optical switch chip 2 uses an SOI wafer with a total thickness of 477 μm as a substrate. The SOI wafer includes a device layer (125 μm thick), a buried oxide layer (2 μm thick), and a substrate layer (350 μm thick). The SOI wafer is integrated using a deep reactive ion etching (DRIE) process to form the following structure:

[0036] Electrode 2-1 is located at both ends of the V-type electrothermal actuator 2-3 and is used to apply the driving voltage. A 30nm thick Cr adhesion layer is first sputtered onto the upper surface of electrode 2-1, followed by a 500nm thick metal thin film electrode layer deposited using a stripping process to improve the adhesion strength of the electrode. Below electrode 2-1 is a buried oxide layer, which forms an insulating barrier on the front side of the MOEMS chip using DRIE.

[0037] The V-shaped electrothermal actuator 2-3 and the optical path isolation silicon wafer 2-5 are integrated into a single unit. In this embodiment, the horizontal angle of the V-shaped electrothermal actuator is 1°, and its thickness is 125 μm. The optical path isolation silicon wafer 2-5 is located in the middle of the through optical path, with a thickness of 125 μm and a width of 50 μm. When electrode 2-1 is de-energized, the optical path isolation silicon wafer 2-5 completely blocks the optical path between the input and output optical fibers. When the V-shaped electrothermal actuator 2-3 is energized and heated, it utilizes the Joule heating effect to generate displacement perpendicular to the chip plane, causing the optical path isolation silicon wafer 2-5 to move upwards and out of the optical path.

[0038] The fiber optic slot 2-6 adopts a straight-through alignment design with an etching depth of 125μm and a trapezoidal cross-section to ensure the coaxiality of the input and output fibers. Fiber optic limiting blocks 2-4 are distributed in the middle and on both sides of the fiber optic slot 2-6 to constrain fiber misalignment and prevent fiber displacement under high overload conditions, thus affecting coaxiality.

[0039] The protective support structure 2-2 is a rectangular block structure located on the back of the V-shaped electrothermal actuator 2-3. It is made of chip substrate layer and is used to provide support and overload limit for the actuator.

[0040] The glass cover 3 is made of BF33 borosilicate glass material. At the location of the movable area of ​​the corresponding chip, a recessed cavity with a depth of 20μm is formed by wet etching, which serves as the moving space of the movable structure.

[0041] In this embodiment, the glass cover plate 3 has two isosceles trapezoidal fiber assembly notches 3-2 machined at both ends of the fiber optic slot, allowing the fiber to smoothly enter the fiber optic slot 2-6 from above the chip. Two fiber optic observation holes 3-4 with a diameter of 400 μm are machined above the fiber optic slot to observe whether collisions or debris occur when the fiber enters the fiber optic slot 2-6. Circular electrode holes 3-3 with a diameter of 400 μm are machined at the corresponding positions of the electrodes 2-1 at both ends of the V-shaped electrothermal actuator 2-3, allowing the gold wire 5 to be soldered to the electrodes 2-1 through these holes. An actuator movable cavity 3-5 with a depth of 20 μm is machined at the corresponding position of the movable area on the back of the glass cover plate.

[0042] Furthermore, a 50nm thick Cr metal layer is sputtered on the surface of the actuator active cavity 3-5 to prevent electrostatic adsorption between the movable structure of the MEMS chip and the glass cover plate during the anodic bonding process.

[0043] The glass cover plate 3 is packaged with the MOEMS optical switch chip 2 through anodizing bonding process, with bonding conditions of 350℃ and 1000V.

[0044] Metal pin 4 is made of Kovar alloy and is hot-dip tin-plated. It is then insulated and sealed to the Kovar alloy housing 1 through a glass sintering process, with an insulation resistance greater than 1000MΩ. Metal pin 4 consists of a bonding end located inside the housing and an external end located outside the housing. The bonding end is connected to the chip electrode 2-1 via gold wire 5, and the external end can be directly plugged into and soldered onto the PCB board.

[0045] The fabrication method of the high-overload-resistant MOEMS optical switch device based on direct optical path alignment described in this embodiment includes the following steps:

[0046] First, the MOEMS optical switch chip 2 is fabricated. The SOI wafer is cleaned, and photolithography is used to form the patterns of electrode 2-1, V-type electrothermal actuator 2-3, optical path isolation silicon wafer 2-5, fiber optic limiting block 2-4, and fiber optic groove 2-6 on the device layer. The device layer is then etched using the DRIE process to form the above structure. The wafer is flipped, and the pattern of protective support structure 2-2 is formed on the substrate layer using photolithography. The substrate layer and buried oxide layer are etched again using the DRIE process to release the movable structure, completing the fabrication of the MOEMS optical switch chip 2.

[0047] Next, the glass cover plate 3 is prepared and bonded to the wafer. The BF33 borosilicate glass wafer is cleaned, and the fiber optic assembly notch 3-2, electrode hole 3-3, fiber optic observation hole 3-4, and actuator moving cavity 3-5 are fabricated using photolithography and wet etching processes. The fabricated glass cover plate 3 is precisely aligned with the MOEMS optical switch chip 2 wafer, and a strong bond is achieved using anodizing (temperature 350℃, voltage 1000V). The bonded wafer is then diced to obtain individual optical switch chip units for packaging.

[0048] Next, the casing and leads are pre-treated. The Kovar alloy casing 1 is stamped and machined to form fiber optic through-holes 1-2 and lead mounting holes 1-3. The casing 1-1 and metal leads 4 are nickel-plated to improve solderability and corrosion resistance. The metal leads 4 are then inserted into the lead mounting holes 1-3 in the casing, and a glass sintering process is used to achieve insulation and sealing between the metal leads 4 and the casing 1.

[0049] Subsequently, chip assembly and electrical connections are performed. The diced optical switch chip unit is bonded to the chip mounting cavity 1-4 at the bottom of the Kovar alloy casing 1 using epoxy adhesive, and then cured at 150°C for 30 minutes. Using a gold wire ball bonding process, one end of the gold wire 5 is soldered to the chip electrode 2-1, and the other end is soldered to the bonding end of the metal pin 4, forming an electrical connection circuit.

[0050] Finally, fiber optic assembly and performance testing are performed. The input and output fibers are cut using a fiber optic cleaver, and the end-face quality is observed to ensure flatness. The fibers are then inserted through the fiber optic through-holes 1-2 on both sides of the housing and into the fiber optic slots 2-6 on the chip. The fiber position is observed under a microscope until it reaches the end of the slot, and positional constraints and limits are applied using fiber optic limiting blocks 2-4. UV-curable adhesive is used to seal and fix the fiber optic connection between it and the housing's fiber optic through-holes 1-2. Electrical and optical performance tests are then conducted, and qualified products are selected.

[0051] The MOEMS optical switch device described in this embodiment adopts a normally closed operating mode. The on / off switching of the optical path is achieved by controlling the energization state of the V-type electrothermal actuators 2-3, as detailed below:

[0052] Off state (normally closed): When no driving voltage is applied by the external control circuit, the V-type electric heating actuator 2-3 is in a natural cooling state. The optical path isolation silicon chip 2-5 integrated on one side is located in the direct optical path between the input optical fiber and the output optical fiber, completely blocking the optical signal. The optical switch is in the off state.

[0053] In the on-state (powered-on drive): The external control circuit applies a DC drive voltage to the V-type electrothermal actuator 2-3 through metal pin 4 and gold wire 5. Due to the Joule heating effect, the actuator experiences a temperature rise and thermal expansion, causing the optical path isolation silicon wafer 2-5 to move upwards in a direction perpendicular to the chip plane, moving out of the optical path. The optical signal from the input optical fiber directly passes through the optical path to reach the output optical fiber, and the optical switch is in the on-state.

[0054] Reset (Power-off Recovery): After the drive voltage is cut off, the V-type electric heating actuator 2-3 cools down rapidly, and the elastic restoring force causes the actuator to drive the optical path isolation silicon chip 2-5 to reset into the optical path, and the optical switch returns to the off state.

[0055] When the MOEMS optical switch device described in this embodiment is subjected to a high overload impact perpendicular to the chip plane, the protective support structure 2-2 on the back of the chip restricts the excessive downward displacement of the V-type electrothermal actuator 2-3, while the glass cover plate 3 restricts the excessive upward displacement of the V-type electrothermal actuator 2-3. Together, they form a double limiting protection structure, which controls the deformation of the actuator within the elastic deformation range and prevents the micro actuator from undergoing plastic deformation or breakage.

[0056] Meanwhile, the optical fiber limiting block 2-4 in the optical fiber slot 2-6 cooperates with the glass cover plate 3, and is fixed by the UV curing adhesive, ensuring that the optical fiber does not loosen or shift under high overload conditions; the Kovar alloy shell 1 provides high-strength external mechanical protection, effectively protecting the internal chip structure.

[0057] It should be understood that the above description of specific embodiments is quite detailed and is only for the purpose of better understanding the present invention, and should not be construed as limiting the scope of protection of the present invention. Any modifications, equivalent substitutions, and improvements made based on the design principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A high-overload resistant MOEMS optical switch device employing a direct-path alignment structure, characterized in that: include: The package consists of a housing (1), a MOEMS optical switch chip (2), a glass cover plate (3), metal pins (4), and gold wires (5). The housing (1) has two 1 mm diameter fiber optic through-holes (1-2) on both sides and two lead mounting holes (1-3) on the bottom, and a chip mounting cavity (1-4) inside. After the MOEMS optical switch chip (2) and the glass cover plate (3) are packaged by anodizing, they are placed in the chip mounting cavity (1-4) of the housing (1). The metal pins (4) are placed in the pin mounting holes (1-3) of the housing (1), and the gold wires (5) are used to connect the two electrodes (2-1) of the MOEMS optical switch chip (2) to the two metal pins (4).

2. The MOEMS optical switch device with a direct optical path alignment structure as described in claim 1, characterized in that: The MOEMS optical switch chip (2) structural layer (2-7) has the following structure: electrodes (2-1) are disposed at both ends of the V-shaped electrothermal actuator (2-3); the optical path isolation silicon wafer (2-5) is an integral structure with the V-shaped electrothermal actuator (2-3) and is located on the straight optical path between the input optical fiber and the output optical fiber; two pairs of optical fiber limiting blocks (2-4) are distributed on the side of the center of the optical fiber slot (2-6), and the optical fiber slot (2-6) runs through the straight optical path to fix the input optical fiber and the output optical fiber. The MOEMS optical switch substrate layer (2-8) has a protective support structure (2-2) located below the vertical working surface of the V-shaped electrothermal actuator (2-3).

3. The MOEMS optical switch device with a direct optical path alignment structure as described in claim 1, characterized in that: The glass cover plate (3) has an optical fiber assembly notch (3-2), an electrode hole (3-3), an optical fiber observation hole (3-4), and an actuator active cavity (3-5) located on the back corresponding to the movable area of ​​the V-shaped electrothermal actuator (2-3). The glass cover plate (3) is fixed to the surface of the structural layer (2-7) of the MOEMS optical switch chip (2) by anodizing, and cooperates with the optical fiber groove (2-6) and the optical fiber limiting block (2-4) to form an optical fiber fixing cavity.

4. The MOEMS optical switch device with high overload resistance according to claim 3, characterized in that, The glass cover (3) is made of BF33 borosilicate glass; the depth of the actuator active cavity (3-5) is 20 μm, and a Cr metal layer with a thickness of 50 nm is sputtered on its inner surface.

5. The MOEMS optical switch device with a direct optical path alignment structure as described in claim 1, characterized in that: A pair of metal pins (4) are respectively inserted and fixed in the mounting holes (1-3) of the housing (1). The metal pins (4) and the housing (1) are insulated and sealed by glass sintering process. One end of the gold wire (5) is connected to an electrode (2-1) on the MOEMS optical switch chip (2), and the other end is connected to the end of the metal pin (4) located inside the housing (1).

6. The MOEMS optical switch device with a direct optical path alignment structure according to claim 1, characterized in that: The protective support structure (2-2) is a rectangular block structure. Its upper surface has a 2 μm gap with the vertical working surface of the V-shaped electric heating actuator (2-3), and the bottom surface of the actuator movable cavity (3-5) has a 20 μm gap with the upper surface of the V-shaped electric heating actuator (2-3). The upper surface of the protective support structure (2-2) and the bottom surface of the actuator movable cavity (3-5) together constitute a mechanical limiting structure that restricts the bidirectional displacement stroke of the V-shaped electric heating actuator (2-3) in the direction perpendicular to the chip plane.

7. A high-overload resistant MOEMS optical switch device with a straight-through optical path alignment structure according to claim 1, characterized in that: The MOEMS optical switch chip (2) is based on an SOI wafer, wherein the device layer thickness is 125 μm, the buried oxide layer thickness is 2 μm, and the substrate layer thickness is 350 μm; the upper surface of the electrode (2-1) is sequentially provided with a Cr adhesion layer with a thickness of 30 nm and a metal thin film electrode layer with a thickness of 500 nm; the horizontal angle of the V-shaped electrothermal actuator (2-3) is 1°, and its thickness is equal to the device layer thickness; the thickness of the optical path blocking sheet (2-5) is equal to the device layer thickness, and its width is 50 μm.

8. The MOEMS optical switch device with a direct optical path alignment structure as described in claim 1, characterized in that: The fiber groove (2-6) is a square cross-section groove with an etching depth equal to the device layer thickness, which is 125 μm. The input fiber and the output fiber are respectively inserted through the fiber through holes (1-2) on both sides of the tube shell (1), inserted through the fiber groove (2-6) and abutting each other to the end of the groove, so that the end faces of the input fiber and the output fiber are aligned with each other in the straight optical path, and the fiber is constrained by the fiber limiting block (2-4). After the fiber is inserted into place, the contact area between the fiber through hole (1-2) and the fiber assembly notch (3-2) is filled with a UV-curable adhesive layer to seal and fix the fiber to the tube shell (1).

9. The MOEMS optical switch device with high overload resistance according to claim 1, characterized in that, The V-shaped electrothermal actuator (2-3) has a multi-bend beam structure. The optical path blocking sheet (2-5) is vertically connected to one side of the V-shaped electrothermal actuator (2-3), and the flat surface of the optical path blocking sheet (2-5) is perpendicular to the chip plane. When the V-shaped electrothermal actuator (2-3) is in its natural state, the lower edge of the optical path blocking sheet (2-5) is located below the bottom surface of the optical fiber groove (2-6). When the V-shaped electrothermal actuator (2-3) is energized and thermally expands, it drives the optical path blocking sheet (2-5) to move upward to above the bottom surface of the optical fiber groove (2-6).

10. The MOEMS optical switch device resistant to high overload according to claim 1, characterized in that, The casing (1) is made of Kovar alloy material, and its overall dimensions are 10 mm × 5.5 mm × 3 mm. The dimensions of the chip mounting cavity (1-4) are 9 mm × 3 mm. The sidewall thickness of the casing (1) is 0.7 mm. The thickness of the bottom where the lead mounting hole (1-3) is located is 0.5 mm. The diameter of the optical fiber through hole (1-2) is 1 mm.

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