Relay module and electronic system
Patent Information
- Application Number
- CN202611104235.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-07-23
- Publication Date
- 2026-10-30
AI Technical Summary
[0004]然而,在上述结构中,作为输出开关的功率MOSFET在关断状态下,其栅极电位虽已低于阈值电压,但沟道表面仍存在弱反型层,形成亚阈值漏电流,该漏电流从信号输入端经弱反型沟道流至输出端,导致关断状态下的静态功耗增加
[0038]本发明实施例的继电器模块包括第一半导体开关和第二半导体开关,第一半导体开关包括两个串联连接的晶体管,第二半导体开关在第一半导体开关关断时提供漏电流的泄放路径,由此在保证继电器快速切换性能的同时,有效抑制其关断状态下的漏电流,并且本实施例的半导体开关数量较少,结构更精简,成本更低,封装更小。
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Figure CN123019705A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to power electronics technology, specifically to relay modules and electronic systems. Background Technology
[0002] In numerous fields such as automated test equipment (ATE), communication base stations, industrial control systems, and medical electronic equipment, signal and power on / off control is a fundamental and critical function. Relays, as the core component for achieving this function, directly impact the reliability, speed, and power consumption of the entire system.
[0003] Solid-state relays based on semiconductor technology, including common opto-relays, are widely used as gating elements in signal paths. Opto-relays use light-emitting devices (such as LEDs) and light-receiving devices (such as photodiode arrays) to achieve electrical isolation between input and output, and use power MOSFETs as output stage switching devices.
[0004] However, in the above structure, although the gate potential of the power MOSFET acting as the output switch is lower than the threshold voltage when it is off, a weak inversion layer still exists on the channel surface, forming a subthreshold leakage current. This leakage current flows from the signal input terminal through the weak inversion channel to the output terminal, resulting in increased static power consumption in the off state. On the other hand, the parasitic capacitance of the power MOSFET itself (especially the gate-drain capacitance Cgd and the drain-source capacitance Cds) forms a feedforward path under high-frequency conditions. The AC signal at the input terminal can be coupled to the common node through this parasitic capacitance, and then further coupled to the output terminal, generating displacement current-type leakage current. This phenomenon is particularly prominent in high-frequency applications, resulting in the actual turn-off isolation being far lower than the theoretical design value.
[0005] Therefore, how to effectively suppress subthreshold leakage current and parasitic capacitive coupling leakage current in the off state while the relay switches performance quickly has become a technical problem that urgently needs to be solved in this field. Summary of the Invention
[0006] In view of the above problems, the purpose of this invention is to provide a relay module and an electronic device to solve the problems existing in the prior art.
[0007] According to one aspect of the present invention, a relay module is provided, comprising:
[0008] A first semiconductor switch includes a first lead-out portion, a second lead-out portion, and a third lead-out portion;
[0009] The second semiconductor switch includes a first lead and a second lead;
[0010] Wherein, the first lead-out portion and the second lead-out portion of the first semiconductor switch are respectively connected to the first output terminal and the second output terminal, the first lead-out portion of the second semiconductor switch is connected to the third lead-out portion of the first semiconductor switch, and its second lead-out portion is connected to the third output terminal;
[0011] The first input circuit is used to control the first semiconductor switch to be turned on and off.
[0012] Preferably, the relay module includes a second input circuit connected between the first input terminal and the third input terminal; used to control the second semiconductor switch to turn on and off.
[0013] Preferably, the first input circuit simultaneously controls the second semiconductor switch to be turned on and off.
[0014] Preferably, the first semiconductor switch includes two transistors connected in series, the second semiconductor switch is configured as a single transistor, and the diodes of the two transistors connected in series in the first semiconductor switch are connected in opposite directions.
[0015] Preferably, the first semiconductor switch includes two transistors connected in series, and the second semiconductor switch includes two transistors connected in series, wherein the diodes of the two transistors connected in series are connected in opposite directions.
[0016] Preferably, the first semiconductor switch is configured as two enhancement-mode transistors connected in series, and the second semiconductor switch is configured as a depletion-mode transistor.
[0017] Preferably, the first semiconductor switch and the first input circuit are packaged in one chip, and the second semiconductor switch and the second input circuit are packaged in one chip.
[0018] Preferably, the first semiconductor switch, the first input circuit, the second semiconductor switch, and the second input circuit are packaged in a single chip.
[0019] Preferably, the first semiconductor switch, the first input circuit, and the second semiconductor switch are packaged in a single chip.
[0020] Preferably, the first input terminal is configured as a first input pin of the chip for receiving a first input voltage, and the second input terminal is configured as a second input pin of the chip for receiving a second input voltage, wherein the first input voltage and the second input voltage are used to drive the light-emitting element in the first input circuit; the first output terminal is configured as a first output pin of the chip, the second output terminal is configured as a second output pin of the chip, and the third output terminal is configured as a third output pin of the chip and connected to a reference ground;
[0021] One of the first output pin and the second output pin is used to receive an external input signal; the other of the first output pin and the second output pin provides the external input signal to the load when the first semiconductor switch is turned on.
[0022] Preferably, the first input terminal is configured as a first input pin of the chip for receiving a first input voltage, the second input terminal is configured as a second input pin of the chip for receiving a second input voltage, and the third input terminal is configured to receive a third input voltage, wherein the first and second input voltages are used to drive the light-emitting element in the first input circuit, and the first and third input voltages are used to drive the light-emitting element in the second input circuit; the first output terminal is configured as a first output pin of the chip, the second output terminal is configured as a second output pin of the chip, and the third output terminal is configured as a third output pin of the chip, and is connected to a reference ground.
[0023] One of the first output pin and the second output pin is used to receive an external input signal; the other of the first output pin and the second output pin provides the external input signal to the load when the first semiconductor switch is turned on.
[0024] Preferably, the switching states of the first semiconductor switch and the second semiconductor switch are complementary.
[0025] Preferably, the first input circuit includes:
[0026] First light-emitting element;
[0027] First photoelectric conversion module;
[0028] When the first light-emitting element emits light, the first photoelectric conversion module receives the light signal wirelessly and converts it into photocurrent; the photocurrent is used to control the control terminal of the first semiconductor switch.
[0029] Preferably, the second input circuit includes:
[0030] Second light-emitting element;
[0031] Second photoelectric conversion module;
[0032] When the second light-emitting element emits light, the second photoelectric conversion module receives the light signal wirelessly and converts it into photocurrent; the photocurrent is used to control the control terminal of the second semiconductor switch.
[0033] Preferably, the two transistors in the first semiconductor switch are configured as N-type enhancement-mode metal-oxide-semiconductor field-effect transistors (MOSFETs), and the transistors in the second semiconductor switch are configured as P-type depletion-mode MOSFETs.
[0034] According to a second aspect of the present invention, an electronic system is provided, the electronic system comprising:
[0035] Any of the relay modules described in the first aspect; and
[0036] load,
[0037] One of the first output terminal and the second output terminal is used to receive an external input signal; the other of the first output terminal and the second output terminal provides the external input signal to the load when the first semiconductor switch is turned on.
[0038] The relay module of this invention includes a first semiconductor switch and a second semiconductor switch. The first semiconductor switch includes two transistors connected in series. The second semiconductor switch provides a leakage current discharge path when the first semiconductor switch is turned off. Thus, while ensuring the fast switching performance of the relay, the leakage current in the off state is effectively suppressed. Furthermore, this embodiment has fewer semiconductor switches, a simpler structure, lower cost, and a smaller package. Attached Figure Description
[0039] The above and other objects, features and advantages of the present invention will become clearer from the following description of embodiments of the invention with reference to the accompanying drawings, in which:
[0040] Figure 1 This is a circuit diagram of the relay module according to the first embodiment of the present invention;
[0041] Figure 2 This is a circuit diagram of the relay module according to the second embodiment of the present invention;
[0042] Figure 3 This is a circuit diagram of the relay module according to the third embodiment of the present invention;
[0043] Figure 4 This is a circuit diagram of the relay module according to the fourth embodiment of the present invention;
[0044] Figure 5 This is a circuit diagram of the relay module according to the fifth embodiment of the present invention;
[0045] Figure 6 This is a circuit diagram of the electronic system according to an embodiment of the present invention. Detailed Implementation
[0046] The present invention is described below based on embodiments, but the invention is not limited to these embodiments. In the detailed description of the invention below, certain specific details are described in detail. Those skilled in the art will fully understand the invention even without these details. To avoid obscuring the essence of the invention, well-known methods, processes, flows, elements, and circuits are not described in detail.
[0047] Furthermore, those skilled in the art should understand that the accompanying drawings provided herein are for illustrative purposes only and are not necessarily drawn to scale.
[0048] Furthermore, it should be understood that in the following description, "circuit" refers to a conductive loop consisting of at least one element or sub-circuit connected by electrical or electromagnetic connections. When an element or circuit is said to be "connected" to another element or "connected" between two nodes, it can be directly coupled or connected to another element, or there may be intermediate elements. The connection between elements can be physical, logical, or a combination thereof. Conversely, when an element is said to be "directly coupled to" or "directly connected" to another element, it means that there are no intermediate elements between them.
[0049] Unless the context explicitly requires it, the words "comprising," "including," and similar terms throughout the specification and claims should be interpreted as encompassing rather than being exclusive or exhaustive; that is, meaning "including but not limited to."
[0050] In the description of this invention, it should be understood that the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance. Furthermore, in the description of this invention, unless otherwise stated, "a plurality of" means two or more.
[0051] Figure 1 This is a circuit diagram of the relay module according to the first embodiment of the present invention. Figure 1As shown, the relay module in this embodiment includes a first input terminal 11 and a second input terminal 12, a first input circuit 10, a first semiconductor switch 20 and a second semiconductor switch 30, and a first output terminal 21, a second output terminal 22, and a third output terminal 23. The first input circuit 10 is used to control the on and off states of the first semiconductor switch 20. The first semiconductor switch 20 includes a first lead-out portion 221, a second lead-out portion 222, and a third lead-out portion 223. The second semiconductor switch 30 includes a first lead-out portion and a second lead-out portion 331. The first lead-out portion 221 and the second lead-out portion 222 of the first semiconductor switch 20 are respectively connected to the first output terminal 21 and the second output terminal 22, and the third lead-out portion 223 is connected to the second semiconductor switch 30. The first lead-out portion of the second semiconductor switch 30 is connected to the third lead-out portion 223 of the first semiconductor switch 20. The second lead-out portion 331 of the second semiconductor switch 30 is connected to the third output terminal 23. In this embodiment, the third output terminal 23 is connected to reference ground. In this embodiment of the invention, the relay module serves as a high-performance switch, capable of transmitting signals to a load, such as various electronic devices. The input terminal of the electronic device is connected to a first output terminal or a second output terminal to receive corresponding voltage or current signals.
[0052] In this embodiment, when the first semiconductor switch 20 is turned on, the second semiconductor switch 30 is turned off, forming a signal transmission path between the first output terminal 21 and the second output terminal 22. When the first semiconductor switch 20 is turned off, the second semiconductor switch 30 is turned on, and the leakage current flowing through the first semiconductor switch 20 flows through the second semiconductor switch 30 into the third output terminal 23, i.e., the reference ground, thereby making the leakage current between the first output terminal 21 and the second output terminal 22 essentially zero, thus improving the accuracy of the signals provided to various electronic devices and circuits. It should be understood that in this embodiment, although the control terminal potential of the first semiconductor switch is lower than the threshold voltage when it is turned off, a weak inversion layer still exists on the channel surface, forming a subthreshold leakage current. This leakage current flows from the signal input terminal of the first semiconductor switch to the output terminal through the weak inversion channel. In one embodiment, the first semiconductor switch includes a transistor, with the gate of the transistor being the control terminal, the signal input terminal being the drain, and the signal output terminal being the source.
[0053] In this embodiment, the first input circuit 10 is connected between the first input terminal 11 and the second input terminal 12. In this embodiment, the first input circuit includes a light-emitting element, such as an LED, which controls the corresponding semiconductor switch to turn on and off based on whether the light-emitting element emits light. The first input terminal 11 and the second input terminal 12 receive a first input voltage and a second input voltage, respectively, wherein the first input voltage is greater than the second input voltage. The light-emitting element in the first input circuit is driven to emit light by the first input voltage and the second input voltage. The first input circuit 10 generates a control signal for controlling the first semiconductor switch 20 to turn on and off. When the control signal is valid, the first semiconductor switch 20 is turned on, and a signal transmission path is formed between the first output terminal 21 and the second output terminal 22. The signal is transmitted from the first output terminal 21 to the second output terminal 22, or from the second output terminal 22 to the first output terminal 21.
[0054] In one embodiment, the first input circuit 10 controls the on and off states of the first semiconductor switch 20. The second semiconductor switch 30 is controlled to be turned on and off by other input circuits.
[0055] In another embodiment, the first input circuit 10 controls not only the on and off states of the first semiconductor switch 20, but also the on and off states of the second semiconductor switch 30. The first and second semiconductor switches are transistors of different types. In one implementation, the first semiconductor switch is configured as an enhancement-mode transistor, and the second semiconductor switch is configured as a depletion-mode transistor.
[0056] In one packaged application, a first input circuit 10, a first semiconductor switch 20, and a second semiconductor switch 30 are packaged in a single chip. First input terminals 11 and 12 are designated as first and second input pins, respectively. First output terminals 21, 22, and 23 are designated as first, second, and third output pins, respectively. One of the first and second output pins is used to receive an external input signal; the other provides the external input signal to a load when the first semiconductor switch is turned on. The first and second input pins receive a first input voltage and a second input voltage, respectively, which are used to drive the light-emitting element in the first input circuit.
[0057] Figure 2 This is a circuit diagram of the relay module according to the second embodiment of the present invention. Figure 2As shown, the relay module in this embodiment includes a first input terminal 11, a second input terminal 12, and a third input terminal 13; a first input circuit 10 and a second input circuit 40; a first semiconductor switch 20 and a second semiconductor switch 30; and a first output terminal 21, a second output terminal 22, and a third output terminal 23. Figure 1 The difference between this embodiment and the previous one is that the relay module in this embodiment includes two input circuits, which are used to control the first semiconductor switch 20 and the second semiconductor switch 30, respectively. The first input circuit 10 is connected between the first input terminal 11 and the second input terminal 12, and is used to control the on and off of the first semiconductor switch 20. The second input circuit 40 is connected between the first input terminal 11 and the third input terminal 13, and is used to control the on and off of the second semiconductor switch 30. The connection method of the first semiconductor switch 20 and the second semiconductor switch 30 is the same as that of the first semiconductor switch 20 and the second semiconductor switch 30 in the relay module of the first embodiment, and will not be described again here.
[0058] In this embodiment, both the first and second input circuits include a light-emitting element, such as an LED, which controls the corresponding semiconductor switch to turn on and off based on whether the light-emitting element emits light. The first input terminal 11 and the second input terminal 12 receive a first input voltage and a second input voltage, respectively, where the first input voltage is greater than the second input voltage. The third input terminal 13 receives a third input voltage, and the levels of the third input voltage and the second input voltage are opposite. In one implementation, the first input voltage is a high-level signal, and when the second input voltage is a low-level signal, the third input voltage is a high-level signal, or when the second input voltage is a high-level signal, the third input voltage is a low-level signal. This allows the first semiconductor switch 20 and the second semiconductor switch 30 to be complementary in their conduction. Compared to the relay module in the first embodiment, the relay module in this embodiment adds an input circuit for controlling the first and second semiconductor switches to turn on and off respectively, thus allowing for more flexible selection of the types of the first and second semiconductor switches.
[0059] In one packaging application, a first semiconductor switch 20 and a first input circuit 10 are packaged on a single chip, and a second semiconductor switch 30 and a second input circuit 40 are packaged on a single chip.
[0060] In another packaging application, a first semiconductor switch 20, a first input circuit 10, a second semiconductor switch 30, and a second input circuit 40 are packaged on a single chip. A first input terminal is configured as a first input pin of the chip to receive a first input voltage; a second input terminal is configured as a second input pin of the chip to receive a second input voltage; and a third input terminal is configured as a third input pin to receive a third input voltage. The first and second input voltages are used to drive light-emitting elements in the first input circuit, and the first and third input voltages are used to drive light-emitting elements in the second input circuit. A first output terminal is configured as a first output pin of the chip; a second output terminal is configured as a second output pin of the chip; and a third output terminal is configured as a third output pin of the chip, connected to a reference ground. One of the first and second output pins is used to receive an external input signal; the other of the first and second output pins provides the external input signal to the load when the first semiconductor switch is turned on.
[0061] Figure 3 This is a circuit diagram of a relay module according to a third embodiment of the present invention. The relay module of this embodiment includes a first input terminal 11 and a second input terminal 12, a first input circuit 10, a first semiconductor switch 20 and a second semiconductor switch 30, and a first output terminal 21, a second output terminal 22, and a third output terminal 23. The first input circuit 10 is used to control the on and off states of the first semiconductor switch 20 and the second semiconductor switch 30, and the control terminals of the first semiconductor switch 20 and the second semiconductor switch 30 are interconnected.
[0062] In this embodiment, the first semiconductor switch 20 includes two transistors M1 and M2 connected in series, with the parasitic diodes of the two transistors connected in opposite directions. The common connection point of transistors M1 and M2 serves as the third lead 223 of the first semiconductor switch 20. The second semiconductor switch 30 includes one transistor M3. The first semiconductor switch 20 includes a first lead 221, a second lead 222, and a third lead 223, while the second semiconductor switch 30 includes a first lead and a second lead 331. The first lead 221 and the second lead 222 of the first semiconductor switch 20 are respectively connected to the first output terminal 21 and the second output terminal 22. The third lead 223 is connected to the first lead of the second semiconductor switch 22, and the second lead 331 of the second semiconductor switch 30 is connected to the third output terminal 23. The first lead of the second semiconductor switch 22 and the third lead 223 of the first semiconductor switch 20 are interconnected. Only the reference numeral for the third lead 223 is shown in the figure; no reference numeral is added to the first lead of the second semiconductor switch 22.
[0063] In one embodiment, transistors M1 and M2 are configured as enhancement-mode transistors; transistor M3 is a depletion-mode transistor. The enhancement-mode transistors conduct when a certain voltage, such as 2V, is applied to their gates; transistors M1 and M2 turn on when the gate-source voltage is zero, and turn off when the gate-source voltage is zero. The depletion-mode transistors conduct when the voltage between their gate and source is zero; N-type depletion-mode transistors turn off with a negative gate voltage, and P-type depletion-mode transistors turn off with a positive gate voltage. In this embodiment, since the first and second semiconductor switches are different types of transistors, only one input circuit is needed to control both semiconductor switches. In one implementation, transistors M1 and M2 are configured as N-type enhancement-mode metal-oxide-semiconductor field-effect transistors (MOSFETs); transistor M3 is a P-type depletion-mode MOSFET. The first lead-out 221 is the drain of transistor M1. The sources of transistor M1 and M2 are connected, and their common connection point is the third lead-out 223. The drain of transistor M2 is the second lead-out 222. The source of transistor M3 is the first lead-out, and the drain of transistor M3 is the second lead-out 331. The control terminals of transistors M1, M2, and M3 are their gates. Since only one input circuit is used to control both the first and second semiconductor switches, the gates of transistors M1, M2, and M3 are interconnected.
[0064] In this embodiment, the two ends of the first input circuit 10 are respectively connected to the first input terminal 11 and the second input terminal 12. The first input circuit 10 includes a light-emitting element LED1 and a photoelectric conversion module PDA1. When the light-emitting element LED1 emits light, the photoelectric conversion module PDA receives the light signal wirelessly and converts it into photocurrent; the photocurrent charges the gate capacitance of the transistor, causing the gate voltage to exceed the threshold voltage, thereby driving the switch to turn on.
[0065] When the LED1 emits light, transistors M1 and M2 in the first semiconductor switch 20 are simultaneously turned on, while transistor M3 in the second semiconductor switch 30 is turned off. A signal transmission path is formed between the first output terminal 21 and the second output terminal 22. The signal is transmitted from the first output terminal 21 to the second output terminal 22, or vice versa. When the LED1 does not emit light, transistors M1 and M2 in the first semiconductor switch 20 are simultaneously turned off, while transistor M3 in the second semiconductor switch 30 is turned on. The leakage current flowing through transistors M1 and M2 flows into the reference ground through transistor M3, thereby making the leakage current between the first output terminal 21 and the second output terminal 22 essentially zero, thus improving the accuracy of the signals provided to various electronic devices and circuits.
[0066] In this embodiment, the input part of the relay module controls the switch using only one light-emitting element, and the output part transmits signals using only three transistors. With the leakage current being almost zero when the transistors are off, the relay circuit structure is more streamlined, the cost is lower, and the package is smaller.
[0067] Figure 4 This is a circuit diagram of the relay module according to the fourth embodiment of the present invention. Figure 3 The difference in this embodiment lies in that the relay module of this invention has two input circuits used to drive a first semiconductor switch 20 and a second semiconductor switch 30, respectively. Both the first semiconductor switch 20 and the second semiconductor switch 30 include two transistors connected in series. The first semiconductor switch 20 includes two transistors M1 and M2 connected in series, with their parasitic diodes connected in opposite directions. The second semiconductor switch 30 includes two transistors M3 and M4 connected in series, with their parasitic diodes connected in opposite directions. Transistors M1, M2, M3, and M4 are configured as enhancement-mode transistors.
[0068] The first input circuit 10 is connected between the first input terminal 11 and the second input terminal 12, and is used to control the on and off states of the first semiconductor switch 20. The second input circuit 40 is connected between the first input terminal 11 and the third input terminal 13, and is used to control the on and off states of the second semiconductor switch 30. The connection method of the first semiconductor switch 20 and the second semiconductor switch 30 is the same as that of the first semiconductor switch 20 and the second semiconductor switch 30 in the relay module of the first embodiment, and will not be described again here.
[0069] In this embodiment, the first input circuit 10 includes a light-emitting element LED1 and a photoelectric conversion module PDA1. The second input circuit 40 includes a light-emitting element LED2 and a photoelectric conversion module PDA2.
[0070] When LED1 emits light, LED2 does not emit light. The photoelectric conversion module PDA1 operates, driving transistors M1 and M2 to conduct while transistors M3 and M4 are turned off, forming a signal transmission path between the first output terminal 21 and the second output terminal 22. This signal is transmitted from the first output terminal 21 to the second output terminal 22, or vice versa. When LED2 emits light, LED1 does not emit light. The photoelectric conversion module PDA2 operates, driving transistors M3 and M4 to conduct while transistors M1 and M2 are turned off. The leakage current flowing through transistors M1 and M2 flows through transistors M3 and M4 into the third output terminal 23, i.e., the reference ground, thus making the leakage current between the first output terminal 21 and the second output terminal 22 essentially zero.
[0071] The relay module in this embodiment includes four power transistors, two photoelectric conversion modules, and two light-emitting elements. One of the light-emitting elements is paired with a photoelectric conversion module to drive two transistors, thereby making the selection of the first semiconductor switch and the second semiconductor switch more flexible.
[0072] Figure 5 This is a circuit diagram of the relay module according to the fifth embodiment of the present invention. Figure 4 The difference in this embodiment is that the second semiconductor switch 30 in the relay module of this embodiment includes a transistor M3.
[0073] When LED1 emits light, LED2 does not emit light. The photoelectric conversion module PDA1 operates, driving transistors M1 and M2 to conduct, and transistor M3 to turn off. A signal transmission path is formed between the first output terminal 21 and the second output terminal 22. This signal is transmitted from the first output terminal 21 to the second output terminal 22, or vice versa. When LED2 emits light, LED1 does not emit light. The photoelectric conversion module PDA2 operates, driving transistor M3 to conduct, and transistors M1 and M2 to turn off. The leakage current flowing through transistors M1 and M2 flows through transistor M3 into the third output terminal, i.e., the reference ground, thus making the leakage current between the first output terminal 21 and the second output terminal 22 essentially zero. Compared to... Figure 4 The relay module of this embodiment has a simpler circuit structure, lower cost, and smaller package.
[0074] Figure 6 This is a circuit diagram of an electronic system according to an embodiment of the present invention. The electronic system includes a relay module 60 and a load 61. The load 61 can be an electronic device and circuit, such as an analog-to-digital converter (ADC). In this embodiment, the first output terminal 21 of the relay module 60 receives an input signal, and the second output terminal 22 is connected to the load 61 to provide the input signal received at the first output terminal 21 to the load 61 via a first semiconductor switch in the relay module 60 and the second output terminal 22. In another embodiment, the load 61 can also be connected to the first output terminal 21, and the second output terminal 22 is used to receive the input signal. In this embodiment, the relay module 60 can be equivalent to a bidirectional switch, whereby one of the first output pin and the second output pin is used to receive an external input signal; the other of the first output pin and the second output pin provides the external input signal to the load when the first semiconductor switch is turned on.
[0075] The relay module of the present invention includes a first semiconductor switch and a second semiconductor switch. The first semiconductor switch includes two transistors connected in series. The second semiconductor switch provides a leakage current discharge path when the first semiconductor switch is turned off. Thus, while ensuring the fast switching performance of the relay, the leakage current in the off state is effectively suppressed. Furthermore, the number of semiconductor switches in this embodiment is smaller, the structure is more concise, the cost is lower, and the package is smaller.
[0076] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. For those skilled in the art, the present invention can be modified and varied in various ways. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principle of the present invention should be included within the scope of protection of the present invention.
Claims
1. A relay module, characterized in that, include The first input circuit is connected between the first input terminal and the second input terminal; A first semiconductor switch includes a first lead-out portion, a second lead-out portion, and a third lead-out portion; as well as The second semiconductor switch includes a first lead and a second lead; Wherein, the first lead-out portion and the second lead-out portion of the first semiconductor switch are respectively connected to the first output terminal and the second output terminal, the first lead-out portion of the second semiconductor switch is connected to the third lead-out portion of the first semiconductor switch, and its second lead-out portion is connected to the third output terminal; The first input circuit is used to control the first semiconductor switch to be turned on and off.
2. The relay module according to claim 1, characterized in that, Also includes: The second input circuit is connected between the first input terminal and the third input terminal; it is used to control the second semiconductor switch to be turned on and off.
3. The relay module according to claim 1, characterized in that, The first input circuit simultaneously controls the second semiconductor switch to be turned on and off.
4. The relay module according to claim 1, characterized in that, The first semiconductor switch includes two transistors connected in series, and the second semiconductor switch is configured as a single transistor, wherein the parasitic diodes of the two transistors connected in series are connected in opposite directions.
5. The relay module according to claim 1, characterized in that, The first semiconductor switch includes two transistors connected in series, and the second semiconductor switch includes two transistors connected in series, wherein the diodes of the two transistors connected in series are connected in opposite directions.
6. The relay module according to claim 3, characterized in that, The first semiconductor switch is configured as two enhancement-mode transistors connected in series, and the second semiconductor switch is configured as a depletion-mode transistor.
7. The relay module according to claim 2, characterized in that, The first semiconductor switch and the first input circuit are packaged in one chip, and the second semiconductor switch and the second input circuit are packaged in one chip.
8. The relay module according to claim 2, characterized in that, The first semiconductor switch, the first input circuit, the second semiconductor switch, and the second input circuit are packaged in a single chip.
9. The relay module according to claim 1, characterized in that, The first semiconductor switch, the first input circuit, and the second semiconductor switch are packaged in a single chip.
10. The relay module according to claim 9, characterized in that, The first input terminal is configured as a first input pin of the chip for receiving a first input voltage, and the second input terminal is configured as a second input pin of the chip for receiving a second input voltage, wherein the first input voltage and the second input voltage are used to drive the light-emitting element in the first input circuit; The first output terminal is configured as the first output pin of the chip, the second output terminal is configured as the second output pin of the chip, and the third output terminal is configured as the third output pin of the chip, and is connected to a reference ground; One of the first output pin and the second output pin is used to receive an external input signal; the other of the first output pin and the second output pin provides the external input signal to the load when the first semiconductor switch is turned on.
11. The relay module according to claim 8, characterized in that, The first input terminal is configured as the first input pin of the chip for receiving a first input voltage, the second input terminal is configured as the second input pin of the chip for receiving a second input voltage, and the third input terminal is configured as the third input pin for receiving a third input voltage, wherein the first input voltage and the second input voltage are used to drive the light-emitting element in the first input circuit, and the first input voltage and the third input voltage are used to drive the light-emitting element in the second input circuit; The first output terminal is configured as the first output pin of the chip, the second output terminal is configured as the second output pin of the chip, and the third output terminal is configured as the third output pin of the chip, and is connected to a reference ground; One of the first output pin and the second output pin is used to receive an external input signal; the other of the first output pin and the second output pin provides the external input signal to the load when the first semiconductor switch is turned on.
12. The relay module according to claim 1, characterized in that, The switching states of the first semiconductor switch and the second semiconductor switch are complementary.
13. The relay module according to claim 1, characterized in that, The first input circuit includes: First light-emitting element; First photoelectric conversion module; When the first light-emitting element emits light, the first photoelectric conversion module receives the light signal wirelessly and converts it into photocurrent; the photocurrent is used to control the control terminal of the first semiconductor switch.
14. The relay module according to claim 2, characterized in that, The second input circuit includes: Second light-emitting element; Second photoelectric conversion module; When the second light-emitting element emits light, the second photoelectric conversion module receives the light signal wirelessly and converts it into photocurrent; the photocurrent is used to control the control terminal of the second semiconductor switch.
15. The relay module according to claim 6, characterized in that, In the first semiconductor switch, two transistors are configured as N-type enhancement-mode metal-oxide-semiconductor field-effect transistors (MOSFETs), and in the second semiconductor switch, the transistors are configured as P-type depletion-mode MOSFETs.
16. An electronic system comprising: Any of the relay modules as described in claims 1-15; as well as load, One of the first output terminal and the second output terminal is used to receive an external input signal; the other of the first output terminal and the second output terminal provides the external input signal to the load when the first semiconductor switch is turned on.