Image sensor, photographing module and electronic device
Patent Information
- Application Number
- CN202611484493.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-09-22
- Publication Date
- 2026-10-30
AI Technical Summary
[0004]然而，卷帘快门曝光方式由于不同像素行之间的曝光时间存在时差，导致高速运动物体的成像会产生扭曲
[0009]本申请实施例提供的图像传感器包括像素阵列，像素阵列包括多个像素单元，每个像素单元包括光电转换电路、积分电容、开关晶体管、卷帘快门读取电路和全局快门读取电路。其中，光电转换电路用于光电转换，生成并缓存电荷信号。卷帘快门读取电路与光电转换电路连接，卷帘快门读取电路用于读取光电转换电路中的电荷信号，并输出卷帘快门信号。开关晶体管与卷帘快门读取电路连接，积分电容与开关晶体管和光电转换电路均连接，积分电容用于缓存光电转换电路中的电荷信号和卷帘快门读取电路的输出信号。全局快门读取电路与积分电容连接，全局快门读取电路用于读取积分电容中的缓存信号，并输出全局快门信号。上述图像传感器，对于每个像素单元，利用积分电容，在卷帘快门读取电路的基础上，增设全局快门读取电路，卷帘快门读取电路与全局快门读取电路之间通过开关晶体管串联设置，实现输出卷帘快门信号和全局快门信号。这样，能够在单一CIS同时实现卷帘快门功能和全局快门功能，以便基于全局快门功能对高速运动物体进行拍摄，可提升CIS对高速运动物体的成像质量。
Smart Images
Figure CN123020997A_ABST
Abstract
Description
Technical Field
[0001] This application belongs to the field of electronic equipment technology, specifically relating to an image sensor, a shooting module, and an electronic device. Background Technology
[0002] In CMOS (Complementary Metal Oxide Semiconductor) image sensors, there are two main pixel exposure methods: rolling shutter exposure and global shutter exposure.
[0003] Among them, most CIS systems use rolling shutter exposure because it is beneficial to the design of pixel circuits in CIS (CMOS Image Sensor) and can achieve a higher frame rate.
[0004] However, the rolling shutter exposure method causes distortion in the image of fast-moving objects due to the time difference in exposure time between different pixel rows. This results in poor image quality for fast-moving objects in a CIS (CMOS Image Sensor). Summary of the Invention
[0005] The purpose of this application is to provide an image sensor, a shooting module, and an electronic device that can simultaneously realize rolling shutter and global shutter functions on a single CIS, thereby improving the imaging quality of the CIS for high-speed moving objects.
[0006] In a first aspect, embodiments of this application provide an image sensor, comprising: a pixel array including multiple pixel units; each pixel unit comprising: a photoelectric conversion circuit for photoelectric conversion, generating and buffering a charge signal; a rolling shutter readout circuit connected to the photoelectric conversion circuit, the rolling shutter readout circuit being used to read the charge signal in the photoelectric conversion circuit and output a rolling shutter signal; a switching transistor connected to the rolling shutter readout circuit; an integrating capacitor connected to both the switching transistor and the photoelectric conversion circuit, the integrating capacitor being used to buffer the charge signal in the photoelectric conversion circuit and the output signal of the rolling shutter readout circuit; and a global shutter readout circuit connected to the integrating capacitor, the global shutter readout circuit being used to read the buffered signal in the integrating capacitor and output a global shutter signal.
[0007] Secondly, embodiments of this application provide a shooting module, including: an image sensor as described in the first aspect.
[0008] Thirdly, embodiments of this application provide an electronic device, including: the shooting module of the second aspect.
[0009] The image sensor provided in this application embodiment includes a pixel array, which comprises multiple pixel units. Each pixel unit includes a photoelectric conversion circuit, an integrating capacitor, a switching transistor, a rolling shutter readout circuit, and a global shutter readout circuit. The photoelectric conversion circuit is used for photoelectric conversion, generating and buffering a charge signal. The rolling shutter readout circuit is connected to the photoelectric conversion circuit and reads the charge signal from the photoelectric conversion circuit, outputting a rolling shutter signal. The switching transistor is connected to the rolling shutter readout circuit, and the integrating capacitor is connected to both the switching transistor and the photoelectric conversion circuit. The integrating capacitor buffers the charge signal from the photoelectric conversion circuit and the output signal from the rolling shutter readout circuit. The global shutter readout circuit is connected to the integrating capacitor and reads the buffered signal from the integrating capacitor, outputting a global shutter signal. In this image sensor, for each pixel unit, a global shutter readout circuit is added to the rolling shutter readout circuit using an integrating capacitor. The rolling shutter readout circuit and the global shutter readout circuit are connected in series via a switching transistor, enabling the output of both the rolling shutter signal and the global shutter signal. In this way, a single CIS can simultaneously achieve rolling shutter and global shutter functions, enabling the shooting of high-speed moving objects based on the global shutter function, thereby improving the image quality of high-speed moving objects by the CIS. Attached Figure Description
[0010] Figure 1 A schematic diagram of an image sensor provided for some embodiments of this application;
[0011] Figure 2 A schematic diagram of pixel units provided for some embodiments of this application;
[0012] Figure 3 A schematic diagram of pixel units provided for some embodiments of this application;
[0013] Figure 4 A schematic diagram of pixel units provided for some embodiments of this application;
[0014] Figure 5 A schematic diagram of a LOFIC pixel circuit provided for some embodiments of this application;
[0015] Figure 6 A schematic diagram of a LOFIC pixel circuit provided for some embodiments of this application;
[0016] Figure 7 A schematic diagram of a LOFIC pixel circuit provided for some embodiments of this application;
[0017] Figure 8 Timing diagrams of the operation of the LOFIC pixel circuit provided for some embodiments of this application;
[0018] Figure 9 Electron flow diagrams of LOFIC pixel circuits provided for some embodiments of this application;
[0019] Figure 10 Electron flow diagrams of LOFIC pixel circuits provided for some embodiments of this application;
[0020] Figure 11 Electron flow diagrams of LOFIC pixel circuits provided for some embodiments of this application;
[0021] Figure 12 A schematic diagram of pixel units provided for some embodiments of this application;
[0022] Figure 13 A schematic diagram of 4-in-1 pixels provided for some embodiments of this application;
[0023] Figure 14 Timing diagrams of pixel array operation provided for some embodiments of this application;
[0024] Figure 15 Timing diagrams of pixel array operation provided for some embodiments of this application;
[0025] Figure 16 Timing diagrams of pixel array operation provided for some embodiments of this application;
[0026] Figure 17 A schematic diagram of a global shutter readout circuit provided for some embodiments of this application;
[0027] Figure 18 A schematic diagram of a global shutter readout circuit provided for some embodiments of this application;
[0028] Figure 19 Structural block diagrams of the shooting module provided for some embodiments of this application;
[0029] Figure 20 Structural block diagrams of electronic devices provided for some embodiments of this application.
[0030] Figure label:
[0031] 100 - Image sensor, 102 - Pixel array, 104 - Pixel unit, 106 - Reset circuit, 108 - Charge transfer circuit, 110 - Rolling shutter readout circuit, 112 - Global shutter readout circuit, 114 - First column of wires, 116 - Second column of wires, 118 - Controller, 120 - Photoelectric conversion circuit, PPD - Photodiode, VDD - Power supply, Q-Switching transistor, T1 - First transistor, T2 - Second transistor, T3 - Third transistor, T4 - Fourth transistor, T5 - Fifth transistor, T6 - Sixth transistor, T7 - Seventh transistor, T8 - Eighth transistor, T9 - Ninth transistor, T10 - Tenth transistor, T11 - Eleventh transistor, T12 - Twelfth transistor, C LOFIC - Integrating capacitor, C LCG -Low conversion gain capacitor, C FD - Floating diffusion capacitance, V RS -Roller shutter signal, V GS - Global shutter signal, 200 - Shooting module, 300 - Electronic device. Detailed Implementation
[0032] The embodiments of this application will now be described in detail. Examples of these embodiments are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.
[0033] The terms "first" and "second" in the specification and claims of this application may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise stated, "a plurality of" means two or more.
[0034] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.
[0035] The following is combined Figures 1 to 20 The image sensor, shooting module, and electronic device of the embodiments of this application will be described in detail.
[0036] like Figure 1 As shown, this application embodiment provides an image sensor 100. The image sensor 100 includes a pixel array 102.
[0037] The pixel array 102 includes multiple pixel units 104.
[0038] Optionally, such as Figure 2 , Figure 3 and Figure 4 As shown, each pixel unit 104 includes a photoelectric conversion circuit 120 and an integrating capacitor C. LOFIC The circuit includes a switching transistor Q, a rolling shutter reading circuit 110, and a global shutter reading circuit 112.
[0039] The photoelectric conversion circuit 120 is used for photoelectric conversion to generate and buffer charge signals.
[0040] Specifically, pixel unit 104 is a LOFIC (Lateral Overflow Integration Capacitor) pixel circuit, such as... Figures 5 to 7 As shown, the LOFIC pixel circuit includes a photodiode PPD and an integrating capacitor C. LOFIC The seventh transistor T7, the eighth transistor T8, the ninth transistor T9, the tenth transistor T10, the eleventh transistor T11, and the twelfth transistor T12.
[0041] Specifically, the photodiode PPD is a clamping photodiode, and the integrating capacitor C... LOFIC Specifically, it is a lateral overflow integrating capacitor.
[0042] Optionally, the LOFIC pixel circuit includes three configurations. In configuration 1, such as... Figure 5 As shown, the first terminal of the eighth transistor T8 is the signal output terminal. The second terminal of the eighth transistor T8 is connected to the first terminal of the ninth transistor T9. The second terminal of the ninth transistor T9 is connected to the power supply VDD. The control terminal of the ninth transistor T9 is connected to the first terminals of both the tenth transistor T10 and the eleventh transistor T11. The second terminal of the tenth transistor T10 is connected to the cathode of the photodiode PPD. The second terminal of the eleventh transistor T11 is connected to the first terminal of the seventh transistor T7. The second terminal of the seventh transistor T7 is connected to the integrating capacitor C. LOFIC The first terminal of the transistor and the first terminal of the twelfth transistor T12 are both connected. The second terminal of the twelfth transistor T12 is connected to the power supply VDD. The integrating capacitor C LOFIC Both the second terminal of the eleventh transistor T11 and the anode of the photodiode PPD are grounded. A low-switching-gain capacitor C exists between the second terminal of the eleventh transistor T11 and the first terminal of the seventh transistor T7. LCGA floating diffusion capacitance C is formed between the control terminal of the ninth transistor T9, the first terminal of the tenth transistor T10, and the first terminal of the eleventh transistor T11. FD .
[0043] In configuration 2, such as Figure 6 As shown, the first terminal of the eighth transistor T8 is the signal output terminal. The second terminal of the eighth transistor T8 is connected to the first terminal of the ninth transistor T9. The second terminal of the ninth transistor T9 is connected to the power supply VDD. The control terminal of the ninth transistor T9 is connected to the first terminals of the tenth transistor T10, the eleventh transistor T11, and the seventh transistor T7. The second terminal of the tenth transistor T10 is connected to the cathode of the photodiode PPD. The second terminal of the eleventh transistor T11 is connected to the first terminal of the twelfth transistor T12. The second terminal of the seventh transistor T7 is connected to the integrating capacitor C. LOFIC The first terminal is connected, the second terminal of the twelfth transistor T12 is connected to the power supply VDD, and the integrating capacitor C... LOFIC The second terminal of the eleventh transistor T11 and the anode of the photodiode PPD are both grounded. A low-switching-gain capacitor C exists between the second terminal of the eleventh transistor T11 and the first terminal of the twelfth transistor T12. LCG A floating diffusion capacitance C is formed between the control terminal of the ninth transistor T9, the first terminal of the tenth transistor T10, the first terminal of the seventh transistor T7, and the first terminal of the eleventh transistor T11. FD .
[0044] In configuration 3, such as Figure 7 As shown, the first terminal of the eighth transistor T8 is the signal output terminal. The second terminal of the eighth transistor T8 is connected to the first terminal of the ninth transistor T9. The second terminal of the ninth transistor T9 is connected to the power supply VDD. The control terminal of the ninth transistor T9 is connected to the first terminals of both the tenth transistor T10 and the eleventh transistor T11. The second terminal of the tenth transistor T10 is connected to the cathode of the photodiode PPD and the first terminal of the seventh transistor T7. The second terminal of the eleventh transistor T11 is connected to the first terminal of the twelfth transistor T12. The second terminal of the seventh transistor T7 is connected to the integrating capacitor C. LOFIC The first terminal is connected, the second terminal of the twelfth transistor T12 is connected to the power supply VDD, and the integrating capacitor C... LOFIC The second terminal of the eleventh transistor T11 and the anode of the photodiode PPD are both grounded. A low-switching-gain capacitor C exists between the second terminal of the eleventh transistor T11 and the first terminal of the twelfth transistor T12. LCG A floating diffusion capacitance C is formed between the control terminal of the ninth transistor T9, the first terminal of the tenth transistor T10, and the first terminal of the eleventh transistor T11. FD .
[0045] Among them, the low conversion gain capacitor C LCG This refers to the LCG (Low Conversion Gain) capacitor. In practical applications, the low conversion gain capacitor C... LCG It can be a floating diffused capacitor or an independent capacitor; no specific restrictions are made here.
[0046] Optionally, the integrating capacitor C LOFIC It is used to receive and buffer electrons overflowing from the photodiode PPD. When the seventh transistor T7 is closed, electrons will freely enter and exit the integrating capacitor C. LOFIC And charge and discharge it.
[0047] Optionally, the integrating capacitor C LOFIC As an independent capacitor device, the integrating capacitance C LOFIC It has independent positive and negative plates and dielectric filling material. Therefore, the integrating capacitor C LOFIC Its capacitance is huge, typically a floating diffusion capacitor C. FD Hundreds of times the capacity.
[0048] Based on the integrating capacitor C LOFIC LOFIC pixel circuitry can implement HDR (High Dynamic Range) technology. Specifically, such as... Figures 8 to 11 As shown, during the exposure time of one frame, if pixel unit 104 encounters strong light, the photodiode PPD within pixel unit 104 will fill its well after a certain period of time, meaning that electrons will fill the built-in capacitance of the photodiode PPD. After the photodiode PPD is filled, it will continue to generate electrons, but excess electrons can flow out of the photodiode PPD through a partially closed transistor.
[0049] Specifically, in configuration 1, such as Figure 9 As shown, when the tenth transistor T10, the eleventh transistor T11, and the seventh transistor T7 are closed, the overflowing electrons will be buffered by the floating diffusion capacitor C. FD Low conversion gain capacitor C LCG With integrating capacitor C LOFIC In a super-large capacitor formed by parallel connections. In configuration 2, as... Figure 10 As shown, when the tenth transistor T10 and the seventh transistor T7 are closed, the overflowing electrons will be buffered by the floating diffusion capacitor C. FD With integrating capacitor C LOFIC In a super-large capacitor formed by parallel connections. In configuration 3, such as Figure 11 As shown, when the seventh transistor T7 is closed, the overflowing electrons will only be buffered in the integrating capacitor C. LOFIC middle.
[0050] Based on this, during the readout time of one frame, the seventh transistor T7 is turned off, and electrons in the photodiode PPD will be introduced into the floating diffusion capacitor C. FD and low conversion gain capacitor C LCG The reading is then performed by the ninth transistor T9, and the seventh transistor T7 closes again, allowing the ninth transistor T9 to read the integrating capacitor C. LOFIC The voltage drop generated by the overflowing electrons serves as the electrical signal of pixel unit 104 under strong light.
[0051] Optionally, the photoelectric conversion circuit 120 includes the aforementioned photodiode PPD, seventh transistor T7, tenth transistor T10, eleventh transistor T11, and twelfth transistor T12.
[0052] Optionally, the rolling shutter reading circuit 110 includes the aforementioned eighth transistor T8 and ninth transistor T9.
[0053] Optionally, the rolling shutter reading circuit 110 is connected to both the photoelectric conversion circuit 120 and the first column of wires 114.
[0054] The shutter reading circuit 110 reads the charge signal from the photoelectric conversion circuit 120 and outputs the shutter signal V to the first column of wires 114. RS .
[0055] Optionally, the first terminal of the switching transistor Q is connected to the rolling shutter reading circuit 110 via the first column of wires 114, and the second terminal of the switching transistor Q is connected to the integrating capacitor C. LOFIC connect.
[0056] Based on this, the integrating capacitor C LOFIC Used to buffer the output signal of the rolling shutter readout circuit 110.
[0057] Optionally, the integrating capacitor C LOFIC It is also connected to the photoelectric conversion circuit 120.
[0058] Based on this, the integrating capacitor C LOFIC It is also used to buffer the charge signal in the photoelectric conversion circuit 120.
[0059] Optionally, the global shutter readout circuit 112 and the integrating capacitor C LOFIC Both the second column of wires 116 are connected.
[0060] Specifically, the global shutter readout circuit 112 and the integrating capacitor C LOFIC The upper electrode is connected, and the integrating capacitor C is... LOFIC The lower electrode is grounded.
[0061] Based on this, such as Figure 12As shown, in each pixel unit 104, the rolling shutter reading circuit 110 and the global shutter reading circuit 112 are connected in series. Specifically, the global shutter reading circuit 112 is connected in series after the rolling shutter reading circuit 110.
[0062] Among them, the global shutter reading circuit 112 is used to read the integrating capacitor C. LOFIC The buffered signal is output to the second column of wires 116, and the global shutter signal V is output. GS .
[0063] Based on this, the image sensor 100 of this application embodiment can simultaneously realize the rolling shutter function and the global shutter function.
[0064] In implementing the global shutter function, the global shutter readout circuit 112 generates a global shutter signal V. GS The rolling shutter readout circuit 110 needs to be turned on as a prerequisite. That is, when the global shutter readout circuit 112 is working, the rolling shutter readout circuit 110 needs to be turned on and output a prerequisite signal, and then the integrating capacitor C can be used... LOFIC As a voltage-domain capacitor, it generates and outputs the global shutter signal V. GS .
[0065] Specifically, the image sensor 100 in this application embodiment can realize a voltage domain global shutter function.
[0066] Specifically, in the image sensor 100 provided in this application embodiment, a global shutter readout circuit 112 is added to each pixel unit 104, and the rolling shutter readout circuit 110 and the global shutter readout circuit 112 are connected in series through a switching transistor Q, while utilizing an integrating capacitor C LOFIC As a voltage-domain capacitor, it realizes the voltage-domain global shutter function and can reduce the readout noise of voltage-domain global shutter pixels.
[0067] In practical applications, the aforementioned pixel unit 104 can specifically be a single pixel or a composite pixel. The composite pixel is obtained by replicating the photodiode PPD and the tenth transistor T10, for example... Figure 13 The 4-in-1 pixel shown is created by replicating the photodiode PPD and the tenth transistor T10, connecting four sets of photodiodes PPD and the tenth transistor T10 in parallel to the same floating diffusion capacitor C. FD .
[0068] In practical applications, the aforementioned composite pixels include, but are not limited to, 4-in-1 pixels, 9-in-1 pixels, and 16-in-1 pixels, etc., and no specific restrictions are imposed here.
[0069] It should be noted that, Figure 1Only a portion of the structure of the image sensor 100 is shown. In actual applications, the image sensor 100 may also include basic structures required for imaging functions, such as drivers, ADCs (Analog-to-Digital Converters), and column scanners. No specific limitations are made here.
[0070] An image sensor 100 according to an embodiment of this application includes a pixel array 102. The pixel array 102 includes a plurality of pixel units 104. Each pixel unit 104 includes a photoelectric conversion circuit 120 and an integrating capacitor C. LOFIC The system includes a rolling shutter reading circuit 110 and a global shutter reading circuit 112. A photoelectric conversion circuit 120 is used for photoelectric conversion, generating and buffering charge signals. The rolling shutter reading circuit 110 is connected to the photoelectric conversion circuit 120, and is used to read the charge signals from the photoelectric conversion circuit 120 and output the rolling shutter signal V. RS The switching transistor Q is connected to the rolling shutter readout circuit 110, and the integrating capacitor C... LOFIC It is connected to both the switching transistor Q and the photoelectric conversion circuit 120, and the integrating capacitor C LOFIC It is used to buffer the charge signal in the photoelectric conversion circuit 120 and the output signal of the rolling shutter readout circuit 110. The global shutter readout circuit 112 and the integrating capacitor C LOFIC The connection, global shutter readout circuit 112 is used to read the integrating capacitor C. LOFIC The buffered signal in the buffer is used to output the global shutter signal V. GS The image sensor 100 described above, for each pixel unit 104, utilizes an integrating capacitor C LOFIC Based on the rolling shutter reading circuit 110, a global shutter reading circuit 112 is added. The rolling shutter reading circuit 110 and the global shutter reading circuit 112 are connected in series via a switching transistor Q to output the rolling shutter signal V. RS and global shutter signal V GS This allows a single CIS to simultaneously perform rolling shutter and global shutter functions, enabling the use of the global shutter function to capture images of fast-moving objects, thus improving the image quality of the CIS for such objects.
[0071] According to some embodiments of this application, optionally, such as Figure 1 As shown, the image sensor 100 also includes a controller 118.
[0072] The controller 118 is connected to multiple pixel units 104.
[0073] Optionally, the controller 118 can be used to: turn on the rolling shutter reading circuit 110 and turn off the global shutter reading circuit 112 to control the pixel array 102 to operate in rolling shutter mode.
[0074] At this time, the image sensor 100 only implements the rolling shutter function, which can meet the needs of rolling shutter shooting.
[0075] Optionally, when the pixel array 102 operates in rolling shutter mode, the timing diagram of the pixel array 102 can be as follows: Figure 14 As shown. Specifically, when the pixel array 102 is operating in rolling shutter mode, the pixel unit 104 is a conventional LOFIC pixel circuit. Within the generation interval of each image frame, each pixel unit 104 undergoes three steps: reset, exposure, and readout. Each row of pixel units 104 is activated, operated, or reset simultaneously, but the operation steps of each row of pixel units 104 have a time difference from the operation steps of other rows of pixel units 104.
[0076] During the reset phase, transistors 10, 11, and 12 are all turned on. In configuration 1, transistor 7 is also turned on to supply power to the photodiode PPD and the floating diffusion capacitor C via the power supply VDD. FD Charge clearing and reset are performed. During the exposure stage, the tenth transistor T10 is turned on, and the charge signal generated by the photodiode PPD is transferred to the floating diffusion capacitor C. FD Inside. During the reading phase, the eighth transistor T8 is turned on, the rolling shutter reading circuit 110 is activated, and the rolling shutter reading circuit 110 converts the floating diffusion capacitor C... FD The charge signal of the internal buffer is read as the rolling shutter signal V. RS and the rolling shutter signal V RS Import the first column of wires, 114.
[0077] In practical applications, when the pixel array 102 is operating in rolling shutter mode, the pixel unit 104 can also realize conventional functions that LOFIC pixel circuits can achieve, such as LOFIC HDR (High Dynamic Range) and CDS (Correlated Double Sampling) noise reduction, without making specific limitations here.
[0078] According to an embodiment of this application, the image sensor 100 further includes a controller 118. The controller 118 is connected to all of the plurality of pixel units 104. The controller 118 is configured to: activate the rolling shutter readout circuit 110 and deactivate the global shutter readout circuit 112, thereby controlling the pixel array 102 to operate in rolling shutter mode. In this way, the rolling shutter function and the global shutter function of the CIS can be activated independently, thus separately implementing the rolling shutter function of the CIS.
[0079] According to some embodiments of this application, optionally, the controller 118 can also be used to: turn on the global shutter readout circuit 112 and turn off the rolling shutter readout circuit 110 to control the pixel array 102 to work in global shutter mode.
[0080] At this time, the image sensor 100 only implements the global shutter function, which can meet the needs of global shutter shooting.
[0081] According to the image sensor 100 of this application embodiment, the controller 118 is further configured to: activate the global shutter readout circuit 112 and deactivate the rolling shutter readout circuit 110, so as to control the pixel array 102 to operate in global shutter mode. In this way, the rolling shutter function and the global shutter function of the CIS can be activated independently, and the global shutter function of the CIS is implemented separately.
[0082] According to some embodiments of this application, optionally, the controller 118 can also be used to: activate the rolling shutter reading circuit 110 and the global shutter reading circuit 112 to control the pixel array 102 to operate in the hybrid shutter mode.
[0083] At this time, the image sensor 100 can simultaneously realize the rolling shutter function and the global shutter function, which can simultaneously meet the needs of rolling shutter shooting and global shutter shooting.
[0084] According to the image sensor 100 of this application embodiment, the controller 118 is further configured to: activate the rolling shutter readout circuit 110 and the global shutter readout circuit 112 to control the pixel array 102 to operate in a hybrid shutter mode. In this way, the rolling shutter function and the global shutter function of the CIS can be activated simultaneously, realizing the hybrid shutter function of a single CIS.
[0085] According to some embodiments of this application, optionally, such as Figures 2 to 4 As shown, the photoelectric conversion circuit 120 includes a photodiode PPD, a charge transfer circuit 108, and a reset circuit 106.
[0086] Among them, the photodiode (PPD) is used to convert optical signals into charge signals.
[0087] Optionally, the charge transfer circuit 108 is integrated with the photodiode PPD, the rolling shutter readout circuit 110, and the integrating capacitor C. LOFIC All are connected.
[0088] Optionally, the integrating capacitor C LOFIC It can be used to buffer the charge signal generated by the photodiode PPD.
[0089] The charge transfer circuit 108 is used to transmit and buffer the charge signal generated by the photodiode PPD.
[0090] Optionally, the reset circuit 106 is connected to both the charge transfer circuit 108 and the power supply VDD.
[0091] Specifically, the charge transfer circuit 108 includes the aforementioned seventh transistor T7, tenth transistor T10, and eleventh transistor T11, and the reset circuit 106 includes the aforementioned twelfth transistor T12.
[0092] Optionally, when the pixel array 102 is operating in global shutter mode, during the generation interval of each image frame, the controller 118 activates the reset circuit 106 and charge transfer circuit 108 in each pixel unit 104 to clear residual charge in multiple pixel units 104. After the residual charge is cleared, the controller 118 controls multiple photodiodes (PPDs) in the multiple pixel units 104 to be exposed simultaneously, so that the multiple pixel units 104 undergo global shutter exposure. After the global shutter exposure is completed, the controller 118 then turns on the photodiodes (PPDs) and integrating capacitors (C) in each pixel unit 104. LOFIC The path between them is used to transfer the charge signal generated by the photodiode PPD to the integrating capacitor C. LOFIC Based on this, the controller 118 then activates the path between the photodiode (PPD) in each pixel unit 104 and the rolling shutter readout circuit 110, and turns on the rolling shutter readout circuit 110 to read the rolling shutter signal V. RS To the first conductor 114. Roller shutter signal V RS After the reading is complete, the controller 118 then turns on the switching transistor Q in each pixel unit 104 to transmit the rolling shutter signal V. RS Cache to integrating capacitor C LOFIC This achieves global voltage transfer. Based on this, the controller 118 then sequentially activates the global shutter readout circuit 112 in each row of pixel units 104 to read the integrating capacitor C row by row. LOFIC The buffered signal in the buffer is used to generate the output global shutter signal V. GS .
[0093] Optionally, when the pixel array 102 operates in global shutter mode, the timing diagram of the pixel array 102 can be as follows: Figure 15 As shown.
[0094] Specifically, when the pixel array 102 is operating in global shutter mode, at the beginning of the generation interval of each image frame, all pixel units 104 uniformly enter the reset phase. At this time, the seventh transistor T7, the tenth transistor T10, the eleventh transistor T11, and the twelfth transistor T12 in each pixel unit 104 are all turned on to clear all electrons in each pixel unit 104 and reset it to the initial state.
[0095] After the reset phase, all pixel units 104 uniformly enter the exposure phase. At this time, the photodiodes (PPDs) in each pixel unit 104 generate charge signals after exposure and buffer these signals in their own capacitors. It should be noted that if the pixel unit 104 has LOFIC HDR enabled, during the exposure phase, the charge overflowing from the photodiodes (PPDs) after they have reached full well will be automatically buffered in the integrating capacitor C. LOFIC middle.
[0096] After the exposure stage, all pixel units 104 uniformly enter the readout stage. At the beginning of the readout stage, all pixel units 104 undergo global voltage transfer. At this time, the photodiodes PPD and integrating capacitors C in each pixel unit 104... LOFIC The pathway between them is opened. For example, in configuration 2, the tenth transistor T10 and the seventh transistor T7 are fully closed and turned on, so that all the charge signal in the photodiode PPD is transferred to the integrating capacitor C. LOFIC Based on this, the tenth transistor T10 in each pixel unit 104 is turned on, and the rolling shutter readout circuit 110 is activated to generate the rolling shutter signal V. RS The shutter signal V is generated in each pixel unit 104. RS After generation, the switching transistor Q in each pixel unit 104 is turned on, and the rolling shutter signal V is activated. RS Transfer to integrating capacitor C LOFIC A buffer is used to implement global voltage transfer.
[0097] After the global voltage transfer is completed, the global shutter readout circuit 112 in each row of pixel unit 104 is turned on row by row to read the integrating capacitor C row by row through the global shutter readout circuit 112. LOFIC The buffered signal in the buffer is used to generate the corresponding global shutter signal V. GS At this time, each row of pixel units 104 occupies an independent global shutter readout period, so that the back-end processing circuit receives and processes the global shutter signal V output by a single row of pixel units 104 in each period. GS .
[0098] In practical applications, when the pixel array 102 is working in global shutter mode, the pixel unit 104 can also realize functions such as LOFIC HDR and CDS noise reduction, without specific limitations.
[0099] According to an embodiment of this application, the image sensor 100 includes a photoelectric conversion circuit 120 comprising a photodiode (PPD), a charge transfer circuit 108, and a reset circuit 106. The photodiode (PPD) converts an optical signal into a charge signal. The charge transfer circuit 108 is integrated with the photodiode (PPD), the rolling shutter readout circuit 110, and the integrating capacitor C. LOFIC All are connected. The charge transfer circuit 108 is used to transfer and buffer the charge signal generated by the photodiode PPD. The reset circuit 106 is connected to both the charge transfer circuit 108 and the power supply VDD. When the pixel array 102 is operating in global shutter mode, the controller 118 is specifically used to: turn on the reset circuit 106 and the charge transfer circuit 108 in each pixel unit 104 to clear the residual charge in multiple pixel units 104; control multiple photodiodes PPD in multiple pixel units 104 to be exposed simultaneously, so that multiple pixel units 104 can be exposed to global shutter; after the global shutter exposure is completed, turn on the photodiodes PPD and the integrating capacitor C in each pixel unit 104. LOFIC The path between them is used to transfer the charge signal generated by the photodiode PPD to the integrating capacitor C. LOFIC In the middle; the path between the photodiode PPD in each pixel unit 104 and the rolling shutter readout circuit 110 is turned on, and the rolling shutter readout circuit 110 is turned on to read the rolling shutter signal V. RS ; Turn on the switching transistor Q in each pixel unit 104 to transmit the rolling shutter signal V RS Cache to integrating capacitor C LOFIC The global shutter readout circuit 112 in each row of pixel unit 104 is activated sequentially to read the global shutter signal V line by line. GS This allows for the separate implementation of the global shutter function in the CIS, enabling the capture of high-speed moving objects and thus improving the image quality of high-speed moving objects by the CIS.
[0100] According to some embodiments of this application, optionally, when the pixel array 102 is operating in a hybrid shutter mode, during the generation interval of each image frame, the controller 118 activates the reset circuit 106 and charge transfer circuit 108 in each pixel unit 104 to clear the residual charge in the plurality of pixel units 104.
[0101] After the residual charge is cleared, the controller 118 controls the simultaneous exposure of multiple photodiodes (PPDs) in the multiple pixel units 104, enabling the multiple pixel units 104 to undergo global shutter exposure. Based on this, the controller 118 then sequentially connects the path between the photodiodes (PPDs) in each row of pixel units 104 and the rolling shutter readout circuit 110, transferring the charge signal generated by the photodiodes (PPDs) to the charge transfer circuit 108, enabling the multiple pixel units 104 to undergo rolling shutter exposure. Furthermore, the controller 118 activates the rolling shutter readout circuit 110 and the switching transistor Q, transferring the charge signal buffered in the charge transfer circuit 108 to the integrating capacitor C. LOFIC middle.
[0102] After the shutter exposure is complete, the controller 118 sequentially activates the path between the photodiode PPD in each row of pixel unit 104 and the shutter readout circuit 110, so as to transfer the charge signal generated by the photodiode PPD to the charge transfer circuit 108 row by row. At the same time, the controller 118 sequentially activates the shutter readout circuit 110 and the switching transistor Q in each row of pixel unit 104, so as to read the charge signal buffered in the charge transfer circuit 108 as the shutter signal V row by row. RS and the rolling shutter signal V RS Cache to integrating capacitor C LOFIC Middle. Roller shutter signal V RS After the reading is complete, the controller 118 disconnects the path between the photodiode PPD and the rolling shutter readout circuit 110 until the global shutter exposure is finished. Then, the controller 118 simultaneously reconnects the path between the photodiode PPD in each pixel unit 104 and the rolling shutter readout circuit 110 to transfer the charge signal generated by the photodiode PPD to the charge transfer circuit 108. Following this, the controller 118 sequentially activates the rolling shutter readout circuit 110, the switching transistor Q, and the global shutter readout circuit 112 in each row of pixel units 104 to read the global shutter signal V line by line. GS .
[0103] Optionally, when the pixel array 102 operates in hybrid shutter mode, the operating timing of the pixel array 102 can be as follows: Figure 16 As shown.
[0104] Specifically, when the pixel array 102 is operating in hybrid shutter mode, at the beginning of the generation interval of each image frame, all pixel units 104 uniformly enter the reset phase. At this time, the seventh transistor T7, the tenth transistor T10, the eleventh transistor T11, and the twelfth transistor T12 in each pixel unit 104 are all turned on to clear all electrons in each pixel unit 104 and reset it to the initial state.
[0105] After the reset phase, all pixel units 104 enter the global shutter exposure phase. At this time, the photodiodes (PPDs) in each pixel unit 104 generate charge signals after exposure and buffer the charge signals in their own capacitance.
[0106] During the global shutter exposure phase, all pixel units 104 undergo charge transfer row by row. At this time, the tenth transistor T10 in each row of pixel units 104 is turned on row by row to transfer the charge signal generated by the photodiode PPD to the floating diffusion capacitor C. FD In this process, for each row of pixel units 104, charge transfer signifies the start of the rolling shutter exposure stage for that row of pixel units 104. The charge signals generated during the partial global shutter exposure stage before the start of the rolling shutter exposure stage are all transferred to the floating diffusion capacitor C. FD Meanwhile, the rolling shutter reading circuit 110 and the switching transistor Q in each row of pixel unit 104 are turned on row by row, and the output floating diffusion capacitor C is read through the rolling shutter reading circuit 110. FD The charge signal is buffered and the output signal of the rolling shutter readout circuit 110 is stored in the integrating capacitor C via the switching transistor Q. LOFIC In order to achieve line-by-line voltage transfer.
[0107] After the rolling shutter exposure is completed, each row of pixel units 104 enters the rolling shutter readout stage row by row. At this time, the tenth transistor T10 in each row of pixel units 104 is turned on row by row to transfer the charge signal generated by the photodiode PPD to the floating diffusion capacitor C row by row. FD Meanwhile, the eighth transistor T8 in each row of pixel unit 104 is turned on row by row, and the rolling shutter reading circuit 110 in each row of pixel unit 104 is turned on row by row, so as to read the floating diffusion capacitor C row by row through the rolling shutter reading circuit 110. FD The stored charge signal is used to generate the corresponding shutter signal V. RS During the shutter readout phase, the switching transistor Q in pixel unit 104 is also turned on, so that the shutter signal V is transmitted via the switching transistor Q. RS Cache to integrating capacitor C LOFIC In the rolling shutter reading phase, pixel unit 104 can enable DCG HDR function, at which time the global shutter reading circuit 112 does not participate in the operation.
[0108] In the shutter signal V RSAfter the readout is complete, the tenth transistor T10 in each pixel unit 104 is turned off. With the global shutter exposure complete, all pixel units 104 uniformly enter the global shutter readout stage. At the beginning of the global shutter readout stage, all pixel units 104 perform a global voltage transfer. At this time, the tenth transistor T10 in each pixel unit 104 simultaneously turns on, causing the charge signal generated by the photodiode PPD to transfer to the floating diffusion capacitor C. FD middle.
[0109] Based on this, the rolling shutter reading circuit 110, the switching transistor Q, and the global shutter reading circuit 112 in each row of pixel unit 104 are turned on row by row, so that the floating diffusion capacitor C is read and output row by row through the rolling shutter reading circuit 110. FD The cached charge signal is used to store the output signal of the rolling shutter readout circuit 110 into the integrating capacitor C via the switching transistor Q. LOFIC In this context, the global shutter readout circuit 112 in each row of pixel units 104 is activated to read the integrating capacitor C through the global shutter readout circuit 112. LOFIC The buffered signal in the buffer is used to output the global shutter signal V. GS .
[0110] It should be noted that when the pixel array 102 is operating in hybrid shutter mode, the global shutter exposure time is different from the rolling shutter exposure time.
[0111] According to the image sensor 100 of this application embodiment, when the pixel array 102 is operating in hybrid shutter mode, the controller 118 is specifically configured to: activate the reset circuit 106 and charge transfer circuit 108 in each pixel unit 104 to clear residual charge in the multiple pixel units 104; control the multiple photodiodes (PPDs) in the multiple pixel units 104 to be exposed simultaneously, so that the multiple pixel units 104 can be exposed to global shutter speed; sequentially connect the path between the photodiodes (PPDs) in each row of pixel units 104 and the rolling shutter readout circuit 110 to transfer the charge signal generated by the photodiodes (PPDs) to the charge transfer circuit 108, so that the multiple pixel units 104 can be exposed to rolling shutter speed; and activate the rolling shutter readout circuit 110 and the switching transistor Q to transfer the charge signal buffered in the charge transfer circuit 108 to the integrating capacitor C. LOFIC After the rolling shutter exposure is completed, the path between the photodiode PPD in each row pixel unit 104 and the rolling shutter readout circuit 110 is sequentially turned on to transfer the charge signal generated by the photodiode PPD to the charge transfer circuit 108. Furthermore, the rolling shutter readout circuit 110 and the switching transistor Q in each row pixel unit 104 are sequentially turned on to read the rolling shutter signal V line by line. RSand the rolling shutter signal V RS Cache to integrating capacitor C LOFIC Middle; Roller shutter signal V RS After the reading is completed, the path between the photodiode PPD and the rolling shutter reading circuit 110 is disconnected; when the global shutter exposure is complete, the path between the photodiode PPD in each pixel unit 104 and the rolling shutter reading circuit 110 is turned on to transfer the charge signal generated by the photodiode PPD to the charge transfer circuit 108; the rolling shutter reading circuit 110, the switching transistor Q, and the global shutter reading circuit 112 in each row of pixel unit 104 are turned on row by row to read the global shutter signal V line by row. GS This enables a hybrid shutter function for a single CIS, allowing for different shooting effects based on different shutter speeds.
[0112] Optionally, according to some embodiments of this application, the controller 118 is further configured to: transfer the charge signal overflowed by the photodiode PPD to the integrating capacitor C during the period of shutter exposure or global shutter exposure of multiple pixel units 104. LOFIC middle.
[0113] Understandably, in related technologies, the exposure of global shutter pixels depends on the capacitance of the photodiode within the pixel. Once the photodiode is fully charged, it cannot accept more electrons, resulting in a limited dynamic range for global shutter pixels under strong light.
[0114] Therefore, in the image sensor 100 provided in this application embodiment, the integrating capacitor C is utilized. LOFIC It buffers the charge signal overflowing after the photodiode PPD is full, so as to realize the LOFIC HDR function of global shutter pixels.
[0115] According to the image sensor 100 of the embodiments of this application, the controller 118 is further configured to: transfer the charge signal overflowed by the photodiode PPD to the integrating capacitor C during the period of shutter exposure or global shutter exposure of multiple pixel units 104. LOFIC In this way, high dynamic range technology of CIS under rolling shutter and global shutter functions is realized, expanding the dynamic range of CIS under rolling shutter and global shutter functions.
[0116] According to some embodiments of this application, optionally, such as Figure 17 As shown, the global shutter readout circuit 112 includes a first transistor T1 and a second transistor T2.
[0117] Among them, the first transistor T1 and the integrating capacitor C LOFIC Both are connected to the power supply VDD.
[0118] Optionally, the second transistor T2 is connected to both the first transistor T1 and the second column of wires 116.
[0119] The first transistor T1 and the second transistor T2 are both NMOS (N-channel Metal-Oxide-Semiconductor) transistors to reduce the pixel layout wiring area, thereby saving design space and reducing design complexity.
[0120] Optionally, when the second transistor T2 is turned on, the global shutter reading circuit 112 is in the on state, and when the second transistor T2 is turned off, the global shutter reading circuit 112 is in the off state.
[0121] According to an embodiment of this application, the image sensor 100 includes a global shutter readout circuit 112 comprising a first transistor T1 and a second transistor T2. The first transistor T1 is connected to the integrating capacitor C. LOFIC Both transistor T1 and the power supply VDD are connected. The second transistor T2 is connected to the first transistor T1. In this way, the global shutter function can be realized by only two transistors working together, which is simple in structure and conducive to the miniaturization design of CIS.
[0122] According to some embodiments of this application, optionally, such as Figure 18 As shown, the global shutter readout circuit 112 includes a third transistor T3, a fourth transistor T4, a fifth transistor T5, and a sixth transistor T6.
[0123] Among them, the third transistor T3 and the integrating capacitor C LOFIC connect.
[0124] Optionally, the fourth transistor T4 is connected to both the third transistor T3 and the power supply VDD.
[0125] Optionally, the fifth transistor T5 is connected to both the fourth transistor T4 and the power supply VDD.
[0126] Optionally, the sixth transistor T6 is connected to both the fifth transistor T5 and the second column of wires 116.
[0127] Among them, the third transistor T3, the fourth transistor T4, the fifth transistor T5, and the sixth transistor T6 are all NMOS transistors to reduce the pixel layout wiring area, thereby saving design space and reducing design complexity.
[0128] Optionally, when the third transistor T3 is turned on, the global shutter reading circuit 112 is in the on state, and when the third transistor T3 is turned off, the global shutter reading circuit 112 is in the off state.
[0129] According to an embodiment of this application, the image sensor 100 includes a global shutter readout circuit 112 comprising a third transistor T3, a fourth transistor T4, a fifth transistor T5, and a sixth transistor T6. The third transistor T3 is connected to the integrating capacitor C. LOFIC Connections are made as follows: The fourth transistor T4 is connected to the third transistor T3 and the power supply VDD. The fifth transistor T5 is connected to the fourth transistor T4 and the power supply VDD. The sixth transistor T6 is connected to the fifth transistor T5. Thus, in the global shutter readout circuit 112, the integrating capacitor C... LOFIC A separate reset path is provided to facilitate the control of the integrating capacitor C. LOFIC It allows for rapid reset and facilitates dual correlation sampling noise reduction under global shutter function.
[0130] According to some embodiments of this application, optionally, such as Figure 19 As shown, this application embodiment also provides a shooting module 200. The shooting module 200 includes the image sensor 100 from any of the above embodiments. The shooting module 200 provided in this application embodiment includes the image sensor 100 from any of the above embodiments and achieves the same technical effect; therefore, to avoid repetition, it will not be described again here.
[0131] According to some embodiments of this application, optionally, such as Figure 20 As shown in the figure, this application embodiment also provides an electronic device 300. The electronic device 300 includes the shooting module 200 in the above embodiments. The electronic device 300 provided in this application embodiment includes the shooting module 200 in the above embodiments and can achieve the same technical effect; therefore, to avoid repetition, it will not be described again here.
[0132] It should be noted that the electronic device 300 in the embodiments of this application includes mobile electronic devices and non-mobile electronic devices.
[0133] In practical applications, the electronic device 300 can be a terminal or other devices besides a terminal. For example, the electronic device 300 can be a mobile phone, tablet computer, laptop computer, handheld computer, in-vehicle electronic device, mobile internet device (MID), augmented reality (AR) / virtual reality (VR) device, robot, wearable device, ultra-mobile personal computer (UMPC), netbook, or personal digital assistant (PDA), etc. It can also be a server, network attached storage (NAS), personal computer (PC), television (TV), ATM, or self-service machine, etc. The embodiments of this application do not specifically limit it.
[0134] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.
[0135] Although embodiments of this application have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of this application, the scope of which is defined by the claims and their equivalents.
Claims
1. An image sensor, characterized in that, include: A pixel array, comprising multiple pixel units; Each pixel unit includes: A photoelectric conversion circuit is used for photoelectric conversion to generate and buffer charge signals. A rolling shutter reading circuit is connected to the photoelectric conversion circuit. The rolling shutter reading circuit is used to read the charge signal in the photoelectric conversion circuit and output the rolling shutter signal. A switching transistor is connected to the shutter reading circuit. An integrating capacitor is connected to both the switching transistor and the photoelectric conversion circuit. The integrating capacitor is used to buffer the charge signal in the photoelectric conversion circuit and the output signal of the rolling shutter reading circuit. A global shutter readout circuit is connected to the integrating capacitor. The global shutter readout circuit is used to read the buffer signal in the integrating capacitor and output the global shutter signal.
2. The image sensor according to claim 1, characterized in that, The image sensor also includes: The controller is connected to multiple pixel units; The controller is used for: The rolling shutter reading circuit is turned on, and the global shutter reading circuit is turned off, so as to control the pixel array to work in rolling shutter mode.
3. The image sensor according to claim 2, characterized in that, The controller is also used for: The global shutter readout circuit is turned on, and the rolling shutter readout circuit is turned off, so as to control the pixel array to work in global shutter mode.
4. The image sensor according to claim 2, characterized in that, The controller is also used for: The rolling shutter reading circuit and the global shutter reading circuit are activated to control the pixel array to operate in hybrid shutter mode.
5. The image sensor according to any one of claims 2 to 4, characterized in that, The photoelectric conversion circuit includes: A photodiode is used to convert light signals into electrical signals; A charge transfer circuit is connected to the photodiode, the rolling shutter reading circuit, and the integrating capacitor. The charge transfer circuit is used to transmit and buffer the charge signal generated by the photodiode. The reset circuit is connected to both the charge transfer circuit and the power supply. When the pixel array is operating in global shutter mode, the controller is specifically used to: The reset circuit and the charge transfer circuit in each pixel unit are activated to clear the residual charge in the plurality of pixel units; The multiple photodiodes in the multiple pixel units are simultaneously exposed to enable the multiple pixel units to perform global shutter exposure. After the global shutter exposure is completed, the path between the photodiode and the integrating capacitor in each pixel unit is turned on to transfer the charge signal generated by the photodiode to the integrating capacitor; The path between the photodiode in each pixel unit and the rolling shutter reading circuit is turned on, and the rolling shutter reading circuit is turned on to read the rolling shutter signal; The switching transistor in each pixel unit is turned on to buffer the rolling shutter signal into the integrating capacitor; The global shutter readout circuit in each row of pixel units is activated sequentially to read the global shutter signal row by row.
6. The image sensor according to claim 5, characterized in that, When the pixel array is operating in hybrid shutter mode, the controller is specifically configured to: The reset circuit and the charge transfer circuit in each pixel unit are activated to clear the residual charge in the plurality of pixel units; The multiple photodiodes in the multiple pixel units are controlled to be exposed simultaneously, so that the multiple pixel units can perform global shutter exposure; The path between the photodiode in each row of pixel units and the rolling shutter readout circuit is turned on row by row to transfer the charge signal generated by the photodiode to the charge transfer circuit, so that the multiple pixel units are exposed by rolling shutter. In addition, the rolling shutter readout circuit and the switching transistor are turned on to transfer the charge signal buffered in the charge transfer circuit to the integrating capacitor. After the rolling shutter exposure is completed, the path between the photodiode in each row of pixel units and the rolling shutter readout circuit is turned on row by row to transfer the charge signal generated by the photodiode to the charge transfer circuit. In addition, the rolling shutter readout circuit and the switching transistor in each row of pixel units are turned on row by row to read the rolling shutter signal row by row and buffer the rolling shutter signal in the integrating capacitor. After the shutter signal reading is completed, the connection between the photodiode and the shutter reading circuit is disconnected. When the global shutter exposure ends, the path between the photodiode in each pixel unit and the rolling shutter readout circuit is turned on to transfer the charge signal generated by the photodiode to the charge transfer circuit; The rolling shutter reading circuit, the switching transistor, and the global shutter reading circuit in each row of pixel units are turned on sequentially to read the global shutter signal line by line.
7. The image sensor according to claim 6, characterized in that, The controller is also used for: During the exposure time of the multiple pixel units using rolling shutter or global shutter, the charge signal overflowing from the photodiode is transferred to the integrating capacitor.
8. The image sensor according to any one of claims 1 to 4, characterized in that, The global shutter readout circuit includes: The first transistor is connected to both the integrating capacitor and the power supply. The second transistor is connected to the first transistor.
9. The image sensor according to any one of claims 1 to 4, characterized in that, The global shutter readout circuit includes: The third transistor is connected to the integrating capacitor; The fourth transistor is connected to both the third transistor and the power supply. The fifth transistor is connected to both the fourth transistor and the power supply. The sixth transistor is connected to the fifth transistor.
10. A shooting module, characterized in that, The image sensor included in any one of claims 1 to 9.
11. An electronic device, characterized in that, Includes the shooting module as described in claim 10.