Magnetic memory device including a shield structure

Abstract

A magnetic memory device can include a substrate, magnetic storage elements spaced apart from each other on the substrate, the magnetic storage elements including a magnetic tunnel junction pattern, and a shield structure surrounding the magnetic storage elements in a horizontal direction. The shield structure can include a plate portion between the magnetic storage elements, and a protrusion portion protruding from the plate portion and surrounding the magnetic storage elements in the horizontal direction.

Description

Cross-references to related applications

[0001] This application claims priority to Korean Patent Application No. 10-2025-0057366, filed on April 30, 2025, with the Korean Intellectual Property Office, the entire disclosure of which is incorporated herein by reference. Technical Field

[0002] Some embodiments of this disclosure relate to magnetic storage devices. Background Technology

[0003] Magnetic storage devices can be non-volatile storage devices that use magnetic tunnel junction patterns, comprising two magnetic materials and an insulating layer in between, to read and write data. The resistance of the magnetic tunnel junction pattern varies depending on the magnetization directions of the two magnetic materials, and this difference in resistance can be used to program or erase data. Magnetic storage devices utilizing the spin-transfer torque (STT) phenomenon work by the following method: when a current with spin polarization in one direction passes through, the magnetization direction of the magnetic material changes due to the spin transfer of electrons. Summary of the Invention

[0004] According to some embodiments of this disclosure, a magnetic storage device with improved shielding properties against external magnetic fields can be provided.

[0005] According to some embodiments of this disclosure, a magnetic storage device may include: a substrate; magnetic storage elements spaced apart from each other on the substrate, the magnetic storage elements including a magnetic tunnel junction pattern; and a shielding structure surrounding the magnetic storage elements in a horizontal direction. The shielding structure may include: plate portions between the magnetic storage elements; and protrusions protruding from the plate portions and surrounding the magnetic storage elements in a horizontal direction.

[0006] According to some embodiments of this disclosure, a magnetic storage device may include: a substrate; a selection element on the substrate; a lower interlayer insulating layer on the selection element; magnetic storage elements spaced apart from each other on the lower interlayer insulating layer, connected to the selection element, and including a magnetic tunnel junction pattern; and a shielding structure surrounding the magnetic storage elements in a horizontal direction. The shielding structure may include: a plate portion extending in a horizontal direction parallel to the upper surface of the lower interlayer insulating layer; and a protrusion extending from the plate portion in a vertical direction intersecting the horizontal direction, the protrusion surrounding the side surface of the magnetic storage element in the horizontal direction.

[0007] According to some embodiments of this disclosure, a magnetic storage device may include: a substrate; a selection element on the substrate; a lower interlayer insulating layer on the selection element; magnetic storage elements spaced apart from each other on the lower interlayer insulating layer, connected to the selection element, and including a magnetic tunnel junction pattern; a first insulating layer on the upper surface of the lower interlayer insulating layer and on the magnetic storage elements; and a shielding structure extending on the first insulating layer in a horizontal direction and a vertical direction intersecting the horizontal direction, and surrounding the side surface of the magnetic storage elements in the horizontal direction. The upper surface of the magnetic storage elements may be exposed from the shielding structure. Attached Figure Description

[0008] The above and other aspects, features, and advantages of embodiments of the present disclosure will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, wherein:

[0009] Figure 1 This is a circuit diagram illustrating a cell array of a magnetic storage device according to an exemplary embodiment of the present disclosure;

[0010] Figure 2 This is a plan view of a magnetic storage device according to an exemplary embodiment of the present disclosure;

[0011] Figure 3 This is an exploded perspective view of a magnetic storage device according to an exemplary embodiment of the present disclosure;

[0012] Figure 4 This is a cross-sectional view of a magnetic storage device according to an exemplary embodiment of the present disclosure, showing along... Figure 2 The cross section intercepted by line I-I';

[0013] Figure 5 yes Figure 4 An enlarged view of a portion of a magnetic storage device;

[0014] Figure 6 It shows crossing Figure 5 A diagram of the magnetic field lines of a magnetic storage element;

[0015] Figure 7 , Figure 8 , Figure 9 , Figure 10 , Figure 11 , Figure 12 and Figure 13 This is a diagram illustrating a magnetic storage device according to an exemplary embodiment of the present disclosure;

[0016] Figure 14A , Figure 14B , Figure 14C , Figure 14D , Figure 14E , Figure 14F and Figure 14GThe diagrams illustrate step-by-step methods for manufacturing magnetic storage devices according to exemplary embodiments of the present disclosure, and are related to... Figure 4 Corresponding cross-sectional views; and

[0017] Figure 15 and Figure 16 This is a block diagram illustrating an electronic device including a magnetic storage device according to an example embodiment of the present disclosure. Detailed Implementation

[0018] In the following description, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings.

[0019] The exemplary embodiments of this disclosure may be modified in various other forms, or various embodiments may be combined, and the scope of this disclosure is not limited to the exemplary embodiments described below. Furthermore, the exemplary embodiments of this disclosure are provided to explain this disclosure more fully to those skilled in the art. Therefore, for clarity, the shapes and dimensions of elements in the drawings may be exaggerated, and elements represented by the same symbols in the drawings may be the same elements.

[0020] The exemplary embodiments of this disclosure are not limited to the specific shapes shown, but also include variations in shape resulting from manufacturing processes. For example, an etched area shown at a right angle may be rounded or have a shape with a predetermined curvature. Therefore, the areas shown in the figures are schematic, and the shapes of the areas shown in the figures are intended to illustrate specific forms of device areas, and are not intended to limit the scope of this disclosure.

[0021] Unless otherwise expressly stated, the terms "upper," "upper surface," "lower," "lower surface," "upward," "downward," "side surface," "high," and "lower" in this specification are based on the accompanying drawings and may vary depending on the orientation of the light-emitting element. Furthermore, "upper" and "lower" include cases where the element is formed "directly" or "indirectly" above or below other components.

[0022] It will be understood that when an element or layer is referred to as being "on," "connected to," or "coupled to" another element or layer, it may be directly on, directly connected to, or directly coupled to that other element or layer, or there may be intermediate elements or layers. Conversely, when an element or layer is referred to as being "directly on," "directly connected to," or "directly coupled to" another element or layer, there are no intermediate elements or layers.

[0023] Figure 1 This is a circuit diagram illustrating a cell array of a magnetic storage device according to an exemplary embodiment of the present disclosure.

[0024] refer to Figure 1The cell array of the magnetic storage device 10 may include unit cells MC of the magnetic storage devices arranged in a matrix. Each unit cell MC of the magnetic storage device includes a select element SE and a magnetic storage element ME. The unit cells MC of the magnetic storage device may be electrically connected to word lines WL and bit lines BL.

[0025] In addition, when selecting component SE such as Figure 1 When a transistor is shown, a source line SL electrically connected to the source region of the selection element SE may also be included. The word line WL and bit line BL can be arranged at an angle in two dimensions, for example, vertically. Furthermore, the word line WL and source line SL can be arranged at an angle, for example, parallel to each other.

[0026] Magnetic storage element ME may include a magnetic tunnel junction (MTJ). The magnetic storage element ME can perform a storage function as a variable resistor, wherein the resistance between two electrodes disposed at opposite ends of the magnetic tunnel junction is changed using a spin-transfer torque (STT) phenomenon, in which the magnetization direction of the magnetic material changes according to the input current.

[0027] The selector element SE can be configured to selectively control the charge flow through the magnetic tunnel junction. For example, the selector element SE can be one of a diode, a PNP bipolar transistor, an NPN bipolar transistor, an N-channel metal-oxide-semiconductor (NMOS) field-effect transistor, and a P-channel metal-oxide-semiconductor (PMOS) field-effect transistor.

[0028] Figure 2 This is a plan view of a magnetic storage device according to an exemplary embodiment of the present disclosure. Figure 3 This is an exploded perspective view of a magnetic storage device according to an exemplary embodiment of the present disclosure. Figure 4 This is a cross-sectional view of a magnetic storage device according to an exemplary embodiment of the present disclosure, showing the magnetic storage device along... Figure 2 A diagram of the cross section intercepted by line I-I'. Figure 5 yes Figure 4 An enlarged view of a portion of a magnetic storage device.

[0029] refer to Figure 2 , Figure 3 , Figure 4 and Figure 5 The element isolation pattern (e.g., device isolation film 102) defining the active pattern ACT can be formed on the substrate 101. The substrate 101 can be a silicon substrate, a germanium substrate, and / or a silicon-germanium substrate.

[0030] The active pattern ACT can be arranged two-dimensionally along multiple rows and columns, and each active pattern ACT can be a rectangle (or strip) extending along a diagonal direction (D direction) relative to the X and Y directions, wherein the X and Y directions can be perpendicular to each other. The active pattern ACT can be arranged along the diagonal direction (D direction) to form each row, and can be arranged along a direction perpendicular to the diagonal direction to form each column. The active pattern ACT can be doped with a first conductivity type dopant.

[0031] The gate 106 forming the word line WL can be disposed on the substrate 101. The gate 106 includes a gate insulating layer pattern (e.g., gate insulating layer 104), the word line WL, and a gate mask layer 105, which can be stacked sequentially. Meanwhile, spacers 107 can be disposed on the sidewalls of the gate 106.

[0032] An impurity region 110 can be formed in the region near the gate 106 on the substrate 101.

[0033] A first interlayer insulating layer 120 may be formed on the entire surface (e.g., the upper surface) of the substrate 101. A contact plug 125 may penetrate the first interlayer insulating layer 120. The contact plug 125 may be electrically connected to the impurity region 110 on one side (e.g., the lower side) and electrically connected to the source line SL or the lower contact portion 135 on the opposite side (e.g., the upper side).

[0034] The contact plug 125 may include at least one of the following: a semiconductor material doped with a dopant (e.g., doped silicon), a metal (e.g., tungsten, aluminum, titanium and / or tantalum), a conductive metal nitride (e.g., titanium nitride, tantalum nitride and / or tungsten nitride), and a metal-semiconductor compound (e.g., a metal silicide).

[0035] A source line SL extending in the X direction can be disposed on the first interlayer insulating layer 120. The source line SL can span the word line WL. The source line SL can be connected to a contact plug 125 arranged in the X direction.

[0036] The second interlayer insulation layer 130 can be disposed on the first interlayer insulation layer 120, and the second interlayer insulation layer 130 can cover the contact plug 125 and the source line SL.

[0037] The lower contact portion 135 may be configured to penetrate the second interlayer insulation layer 130, and each lower contact portion 135 may be electrically connected to the contact plug 125. In an example embodiment, the lower contact portions 135 may be arranged in a plan view as spaced apart from each other along the X and Y directions. The lower contact portions 135 may also be arranged in a Z-shape in a plan view.

[0038] Multiple magnetic storage elements ME can be disposed on the second interlayer insulating layer 130.

[0039] Multiple magnetic storage elements ME can be configured on the second interlayer insulating layer 130 to make electrical contact with the lower contact portion 135, and can be configured in the XY plane to have a predetermined separation distance.

[0040] Multiple magnetic storage elements ME can be arranged in a matrix, but embodiments of this disclosure are not limited thereto; multiple magnetic storage elements ME can also be arranged in a zigzag pattern. Furthermore, the separation distances between multiple magnetic storage elements ME can be different from each other. For example, a first separation distance I1 between two magnetic storage elements ME arranged diagonally (D direction) on an active region (e.g., impurity region 110) can be greater than a second separation distance I2 between magnetic storage elements ME on adjacent active regions (e.g., impurity region 110).

[0041] Each magnetic storage element ME can have a circular, elliptical, or polygonal shape (e.g., rectangular shape) in the XY plane, and when its cross-section is viewed from a vertical direction (e.g., the Z direction), the width of the upper surface of the magnetic storage element ME can be equal to or less than the width of the lower surface of the magnetic storage element ME, and when there is a difference in width between the upper and lower surfaces, the side surface between the upper and lower surfaces of the magnetic storage element ME can have an angle θ1. The angle θ1 of the side surface relative to the lower surface can be less than or equal to 90 degrees, but can be greater than 70 degrees. Therefore, each magnetic storage element ME can be formed as a columnar stacked structure on the second interlayer insulating layer 130.

[0042] Each magnetic storage element ME may include a lower electrode 145, an upper electrode 160, and a magnetic tunnel junction pattern 150 between the lower electrode 145 and the upper electrode 160.

[0043] The lower electrode 145 may be disposed on the lower contact portion 135. The lower electrode 145 may include a conductive material, such as titanium, tantalum, ruthenium, titanium nitride, tantalum nitride, or tungsten. The conductive material may be used alone or in combination. For example, the lower electrode 145 may have a bilayer film structure such as ruthenium / titanium, ruthenium / tantalum, ruthenium / titanium nitride, ruthenium / tantalum nitride, titanium nitride / tungsten, etc.

[0044] The magnetic tunnel junction pattern 150 can be disposed on the lower electrode 145. The magnetic tunnel junction pattern 150 may include a lower magnetic layer 152, a tunnel barrier layer 154 and an upper magnetic layer 156 disposed sequentially on the lower magnetic layer 152.

[0045] At least a portion of the lower electrode 145 can be patterned simultaneously with the magnetic tunnel junction pattern 150.

[0046] In this embodiment, a vertically magnetized magnetic tunnel junction device is described as an example, wherein the lower magnetic layer 152 is used as a pinning layer and the upper magnetic layer 156 is used as a free layer. However, a vertically magnetized magnetic tunnel junction device in which the lower magnetic layer 152 is used as a free layer and the upper magnetic layer 156 is used as a pinning layer can be formed.

[0047] The lower magnetic layer 152 may include a first lower magnetic layer 152a and a second lower magnetic layer 152b on the first lower magnetic layer 152a. The first lower magnetic layer 152a may include a ferromagnetic material layer. The ferromagnetic material layer may include, for example, cobalt (Co), iron (Fe), nickel (Ni), platinum (Pt), palladium (Pd), etc. In addition, the first lower magnetic layer 152a may have a fixed magnetization direction.

[0048] The second lower magnetic layer 152b on the first lower magnetic layer 152a may include a ferromagnetic material layer. The magnetization direction of this ferromagnetic material layer may be determined by an antiferromagnetic material layer. For example, the ferromagnetic material layer may include cobalt (Co), iron (Fe), nickel (Ni), platinum (Pt), palladium (Pd), etc., and may also have a synthetic antiferromagnetic (SAF) structure. The SAF structure may be a multilayer film structure in which multiple magnetic layers and at least one intermediate layer are stacked sequentially. For example, the SAF structure may be a multilayer film structure in which a first magnetic layer, an intermediate layer, and a second magnetic layer are stacked sequentially. The SAF structure may be a multilayer film structure in which a first magnetic layer, a first intermediate layer, a second magnetic layer, a second intermediate layer, and a third magnetic layer are stacked sequentially. For example, the first magnetic layer may include Fe-Pt alloy, Fe-Pd alloy, Co-Pd alloy, Co-Pt alloy, Fe-Ni-Pt alloy, Co-Fe-Pt alloy, Co-Ni-Pt alloy, Ni-Fe alloy, Co-Fe alloy, Ni-Fe-B alloy, Co-Fe-B alloy, Ni-Fe-Si-B alloy, Co-Fe-Si-B alloy, etc. The second and third magnetic layers may include single-layer films or multilayer films of cobalt (Co), iron (Fe), platinum (Pt), and palladium (Pd), and the intermediate layer may include ruthenium (Ru), tantalum (Ta), chromium (Cr), copper (Cu), etc.

[0049] The tunnel barrier layer 154 may be disposed on the lower magnetic layer 152. The tunnel barrier layer 154 may include any one selected from magnesium oxide (MgO), aluminum oxide (Al2O3), silicon oxide (SiO2), and boron oxide (B2O3). For example, the tunnel barrier layer 154 may include aluminum oxide (Al2O3).

[0050] The upper magnetic layer 156 can be disposed on the tunnel barrier layer 154. The upper magnetic layer 156 can be a free magnetic layer, may include the same material as the second lower magnetic layer 152b, and can be magnetized in the same direction as the second lower magnetic layer 152b. That is, the upper magnetic layer 156 can have the same magnetization direction as the second lower magnetic layer 152b. The upper magnetic layer 156 can include at least one of cobalt (Co), iron (Fe), nickel (Ni), palladium (Pd), and platinum (Pt). For example, the upper magnetic layer 156 can include Fe-Pt alloy, Fe-Pd alloy, Co-Pd alloy, Co-Pt alloy, Fe-Ni-Pt alloy, Co-Fe-Pt alloy, Co-Ni-Pt alloy, etc. The upper magnetic layer 156 and the second lower magnetic layer 152b can include materials with high remanence, and can be materials with remanence greater than that of the shielding structure 175.

[0051] The upper electrode 160 can be disposed on the magnetic tunnel junction pattern 150. The thickness of the upper electrode 160 can be greater than the thickness of the lower electrode 145, and the upper electrode 160 can include a single layer or multiple layers of conductive material, such as titanium, tantalum, ruthenium, titanium nitride, tantalum nitride, tungsten, etc.

[0052] Bit line BL can be formed as a metal wiring disposed on magnetic tunnel junction pattern 150 and in contact (e.g., direct contact) with upper electrode 160. Bit line BL can be formed of a metal with low resistivity (e.g., copper (Cu)). The width of the upper portion of bit line BL can be greater than the width of the lower portion of bit line BL, but embodiments of this disclosure are not limited thereto; for example, the width of the upper portion of bit line BL can be equal to the width of the lower portion of bit line BL (e.g., ...). Figure 4 and Figure 5 (As shown).

[0053] A first insulating layer 170 covering all side surfaces of the magnetic tunnel junction pattern 150, as well as the side and top surfaces of the upper electrode 160, can be disposed on the second interlayer insulating layer 130. The upper surface Sa of the upper electrode 160 can be disposed at a height lower than the height of the upper surface (e.g., the uppermost surface) of the first insulating layer 170. That is, the first insulating layer 170 can be configured to cover the upper surface of the second interlayer insulating layer 130 parallel to the upper surface of the substrate 101, as well as all side and top surfaces of the magnetic storage element ME. The first insulating layer 170 can be configured to have a specific thickness tb on the side and top surfaces of the magnetic storage element ME, and can be conformally arranged along the outer periphery of the magnetic storage element ME. The first insulating layer 170 can include an insulating material having etch selectivity relative to the third interlayer insulating layer 140, and can include, for example, silicon nitride.

[0054] The shielding structure 175 can be disposed on the first insulating layer 170.

[0055] The shielding structure 175 may include a magnetic material and may have a plate portion 175H extending on the second interlayer insulating layer 130 in a horizontal direction parallel to the upper surface of the substrate 101, and a protrusion 175V that bends upward from the plate portion 175H and protrudes to surround at least a portion of the side surface of each magnetic storage element ME. The shielding structure 175 may be configured to have a bent portion (e.g., a corner) between the plate portion 175H and the protrusion 175V.

[0056] like Figure 3 As shown, the plate portion 175H and the protrusion 175V can extend together as a single metal layer, and the first thickness of the plate portion 175H and the second thickness ta of the protrusion 175V can be substantially the same. The plate portion 175H and the protrusion 175V can be formed as an integral structure. In this case, the shielding structure 175 can have a second thickness ta throughout. The second thickness ta of the shielding structure 175 can be less than the thickness tb of the first insulating layer 170. For example, the second thickness ta of the shielding structure 175 can be 1 / 4 to 1 / 8 of the thickness tb of the first insulating layer 170.

[0057] Since the shielding structure 175 can be uniformly formed with a second thickness ta, there is no need to set a block shielding structure in the separation space between the magnetic storage elements ME, so that the signal delay (RC delay) can be minimized.

[0058] The board portion 175H can extend parallel to the upper surface of the substrate 101 on the second interlayer insulating layer 130, and can be arranged within the separation space between a plurality of magnetic storage elements ME that are spaced apart from each other. Protrusions 175V can be provided that penetrate and surround the side surface of the respective magnetic storage elements ME. Therefore, the arrangement of the protrusions 175V on the board portion 175H can be the same as the arrangement of the magnetic storage elements ME.

[0059] The protrusion 175V may surround the side surface of the magnetic storage element ME on the first insulating layer 170, and may include an inner surface in contact with the outer surface of the first insulating layer 170, an outer surface opposite to the inner surface, and an upper surface Sc with a length equal to the second thickness ta between the inner and outer surfaces. When the second height h2 of the protrusion 175V is defined as the vertical length from the upper surface of the second interlayer insulating layer 130 to the upper surface Sc of the protrusion 175V, the first height h1 of the magnetic storage element ME may be defined as the length from the upper surface of the second interlayer insulating layer 130 to the upper surface Sa of the upper electrode 160.

[0060] The first height h1 can be greater than the second height h2. Accordingly, the upper surface Sc of the protrusion 175V can be located at a height lower than that of the upper surface of the magnetic storage element ME (e.g., the upper surface Sa of the upper electrode 160).

[0061] The upper surfaces Sc of the protrusions 175V can be located at substantially the same height as each other, and the upper surfaces Sc of the protrusions 175V can be located at a height higher than the height of the magnetic tunnel junction pattern 150.

[0062] Specifically, the upper surface Sc of the protrusion 175V may overlap with the upper electrode 160 in the horizontal direction and may be located between the upper surface Sa and the lower surface (e.g., the surface in contact with the upper surface Sb) of the upper electrode 160. The upper surface of the protrusion 175V may be located at a height higher than the upper surface Sb of the magnetic tunnel junction pattern 150 (e.g., the upper surface Sb of the upper magnetic layer 156). The lower end of the protrusion 175V may be located at a height lower than the lower end of the magnetic tunnel junction pattern 150 (e.g., the lower surface of the first lower magnetic layer 152a).

[0063] Therefore, the protrusion 175V can overlap with the magnetic tunnel junction pattern 150 in the horizontal direction to completely surround the side surface of the magnetic tunnel junction pattern 150, thereby shielding the magnetic field to be injected into the magnetic tunnel junction pattern 150. Each protrusion 175V can have a shape similar to that of the magnetic storage element ME, and when the cross-section of the magnetic storage element ME is circular, elliptical, or polygonal, the horizontal cross-section of the protrusion 175V can have a circular, elliptical, or polygonal frame shape.

[0064] The shielding structure 175 may include a magnetic material, such as a weakly magnetic material. The weakly magnetic material may include a material whose remanence is lower than that of the lower magnetic layer 152 or the upper magnetic layer 156.

[0065] Weakly magnetic materials may include cobalt (Co), may consist of only cobalt, or may include cobalt-zirconium-tantalum, but exemplary embodiments are not limited thereto.

[0066] When the shielding structure 175 includes cobalt (Co), the lower magnetic layer 152 or the upper magnetic layer 156 may include a material with a remanence higher than that of cobalt (Co).

[0067] As described above, the shielding structure 175 can be disposed on the side surface of the magnetic tunnel junction pattern 150 to cover the entire magnetic tunnel junction pattern 150 from its upper end to its lower end, so that a vertical external magnetic field injected from the outside can be absorbed. Therefore, since the external magnetic field cannot be injected into the internal magnetic tunnel junction pattern 150, the magnetism stored in the magnetic tunnel junction pattern 150 can be maintained.

[0068] In addition, such as Figure 6 As shown, the external magnetic field injected horizontally through the plate portion 175H cannot be injected into the magnetic tunnel junction pattern 150, thereby protecting the magnetic tunnel junction pattern 150.

[0069] As described above, when the shielding structure 175 is integrally formed on the entire surface (e.g., the entire side surface) of the magnetic storage device 10, the first insulating layer 170 on the upper surface Sa of the upper electrode 160 at the upper end of each magnetic storage element ME and the first insulating layer 170 on the side surface of the upper electrode 160 can be partially open.

[0070] The third interlayer insulation layer 140 may be disposed on the shielding structure 175. The third interlayer insulation layer 140 may include the same material as the first interlayer insulation layer 120 and the second interlayer insulation layer 130, and may have a multilayer stacked structure. The upper surface of the third interlayer insulation layer 140 may be coplanar with the upper surface of the first insulation layer 170, but its exemplary embodiments are not limited thereto.

[0071] An upper via 190 can be provided that penetrates the upper surface of the first insulating layer 170, and a bit line BL connected to the upper via 190 can be provided on the first insulating layer 170 as a wiring structure.

[0072] The first interlayer insulating layer 120, the second interlayer insulating layer 130, and the third interlayer insulating layer 140 may include materials that cannot be removed by the ashing process. The first interlayer insulating layer 120, the second interlayer insulating layer 130, and the third interlayer insulating layer 140 may include at least one of the following: for example, borophosphosilicate glass (BPSG), Tonen silazane (TOSZ), undoped silicate glass (USG), spin-coated glass (SOG), flowable oxide (FOX), tetraethyl orthosilicate (TEOS), and high-density plasma chemical vapor deposition (HDP-CVD) oxide.

[0073] Figure 6 It shows the surrounding Figure 2 , Figure 3 , Figure 4 and Figure 5 The external magnetic field flowing through the magnetic storage device, including the shielding structure 175.

[0074] An external magnetic field MF may pass through the magnetic storage element ME in various directions, and the vertical portion of the external magnetic field MF flowing in the Z direction and the horizontal portion of the external magnetic field MF flowing in a direction perpendicular to the Z direction may flow through the magnetic storage element ME.

[0075] In this case, the portion of the external magnetic field MF flowing in the horizontal direction can be completely shielded by the plate portion 175H of the shielding structure 175, and cannot penetrate into the magnetic storage element ME.

[0076] Furthermore, the portion of the external magnetic field MF flowing vertically can be diverted into the protrusion 175V and concentrated there, preventing the vertically flowing portion of the external magnetic field MF from flowing into the magnetic storage element ME, thereby shielding the external magnetic field MF from affecting the internal magnetic storage element ME. Moreover, since the shielding structure 175 may include a weakly magnetic material (e.g., a material with a lower remanence than the magnetic material of the magnetic tunnel junction pattern 150 of the magnetic storage element ME), the shielding structure 175 can lose its magnetism when the external magnetic field MF is removed, without affecting the magnetic storage element ME therein.

[0077] In the following text, reference will be made to Figure 7 , Figure 8 , Figure 9 , Figure 10 , Figure 11 and Figure 12 Another magnetic storage device according to another embodiment of the present disclosure is described.

[0078] Figure 7 , Figure 8 , Figure 9 , Figure 10 , Figure 11 and Figure 12 It shows the relationship with Figure 5 Other corresponding magnetic storage devices.

[0079] Figure 7 The magnetic storage element ME of the medium magnetic storage device 10a can be with Figure 5 The magnetic storage element ME of the magnetic storage device 10 is the same, except that the former also includes a capping layer 162 on the magnetic tunnel junction pattern 150.

[0080] Figure 7 The magnetic storage element ME may include a capping layer 162 between the magnetic tunnel junction pattern 150 and the upper electrode 160, and the capping layer 162 may include a conductive material and may include a material different from the material of the upper electrode 160. For example, when the upper electrode 160 includes tungsten (W), the capping layer 162 may include titanium nitride (TiN) or tantalum nitride (TaN).

[0081] The thickness of the capping layer 162 can be less than the thickness of the upper electrode 160, and the side surface of the capping layer 162 can have a continuous tilt angle relative to the lower magnetic layer 152, the upper magnetic layer 156 and the upper electrode 160.

[0082] The first insulating layer 170 may surround the magnetic storage element ME, and the shielding structure 175 may be on the first insulating layer 170, which may be connected to... Figure 2 , Figure 3 , Figure 4 and Figure 5 The same as shown.

[0083] In this configuration, the upper surface Sc of the protrusion 175V of the shielding structure 175 can be positioned at a height higher than the upper surface Sb of the capping layer 162, and can horizontally overlap with the side surface of the upper electrode 160. Therefore, the shielding structure 175 can completely shield the magnetic tunnel junction pattern 150.

[0084] Figure 8 The magnetic storage element ME of the medium magnetic storage device 10b can be with Figure 7 The magnetic storage element ME of the magnetic storage device 10a is the same, except that the upper surface Sc of the protrusion 175V of the shielding structure 175 can be located at the same height as the upper surface Sb of the capping layer 162.

[0085] when Figure 8 When the magnetic storage element ME includes a capping layer 162 between the magnetic tunnel junction pattern 150 and the upper electrode 160, the upper surface Sc of the protrusion 175V of the shielding structure 175 can be located at a height substantially the same as the height of the upper surface Sb of the capping layer 162. Therefore, the shielding structure 175 can completely shield the magnetic tunnel junction pattern 150.

[0086] Figure 9 The magnetic storage element ME of the medium magnetic storage device 10c can be with Figure 5 The magnetic storage device 10 is the same as the magnetic storage element ME, except that it also includes a capping layer 162 and an upper insulating layer 164 on the magnetic tunnel junction pattern 150.

[0087] Figure 9 The magnetic storage element ME may include a capping layer 162 between the magnetic tunnel junction pattern 150 and the upper electrode 160, and the capping layer 162 may include a conductive material and may include a material different from that of the upper electrode 160. For example, when the upper electrode 160 includes tungsten, the capping layer 162 may include titanium nitride or tantalum nitride.

[0088] An upper insulating layer 164 may be further disposed between the capping layer 162 and the magnetic tunnel junction pattern 150, and the upper insulating layer 164 may include the same material as the tunnel barrier layer 154. For example, the upper insulating layer 164 may include hafnium oxide, but exemplary embodiments thereof are not limited thereto.

[0089] As described above, storage functionality can be improved by providing a separate tunneling layer between the upper electrode 160 and the magnetic tunnel junction pattern 150.

[0090] The upper insulating layer 164 may include material and thickness substantially the same as that of the tunnel barrier layer 154, but its exemplary embodiments are not limited thereto. The upper insulating layer 164 may include oxides or nitrides having a high dielectric constant.

[0091] The side surfaces of the capping layer 162 and the upper insulating layer 164 may have a tilt angle θ1 continuously relative to the lower magnetic layer 152, the upper magnetic layer 156 and the upper electrode 160.

[0092] Even in this case, the protrusion 175V of the shielding structure 175 can be configured to cover the side surface of the upper insulating layer 164 and the side surface of the capping layer 162, and can be configured such that the upper surface Sc of the protrusion 175V horizontally overlaps with the side surface of the upper electrode 160.

[0093] Therefore, the shielding structure 175 can completely shield the magnetic tunnel junction pattern 150.

[0094] Figure 10 The magnetic storage element ME of the medium magnetic storage device 10d can be with Figure 9 The magnetic storage device 10c is the same as the magnetic storage element ME, except that it also includes a diffusion barrier layer 177 between the shielding structure 175 and the magnetic storage element ME.

[0095] Figure 10 The diffusion barrier layer 177 can be disposed between the shielding structure 175 and the first insulating layer 170.

[0096] The diffusion barrier layer 177 may have the same shape as the shielding structure 175 and may be disposed along the plate portion 175H and the protrusion 175V of the shielding structure 175. The diffusion barrier layer 177 may have a third thickness tc that is smaller than the second thickness of the shielding structure 175, and the third thickness tc may be, for example, 10 Å to 20 Å. The diffusion barrier layer 177 may include a material different from the material of the shielding structure 175 and may include, for example, titanium nitride or tantalum nitride.

[0097] The portion of the diffusion barrier layer 177 on the protrusion 175V of the shielding structure 175 may have an upper end at the same height as the upper end Sc of the protrusion 175V, and may overlap with the side surface of the upper electrode 160 in a plane (e.g., in the horizontal direction). Therefore, the upper end of the diffusion barrier layer 177 may be disposed between the upper surface Sa and the lower surface (which contacts the upper surface Sb) of the upper electrode 160.

[0098] Figure 11 The magnetic storage element ME of the medium magnetic storage device 10e can be with Figure 10 The magnetic storage element ME of the magnetic storage device 10d is the same, except for the height of the upper end of the diffusion barrier layer 177 between the shielding structure 175 and the magnetic storage element ME.

[0099] Figure 11The diffusion barrier layer 177 can be disposed between the shielding structure 175 and the first insulating layer 170.

[0100] The diffusion barrier layer 177 may have the same shape as the shielding structure 175 and may be disposed along the plate portion 175H and the protrusion 175V of the shielding structure 175. The diffusion barrier layer 177 may have a third thickness tc smaller than the second thickness ta of the shielding structure 175 (see [reference]). Figure 10 The diffusion barrier layer 177 may include a material different from that of the shielding structure 175, and may include, for example, titanium nitride or tantalum nitride.

[0101] The portion of the diffusion barrier layer 177 on the protrusion 175V of the shielding structure 175 may have an upper end that is at a height higher than the height of the upper surface Sc of the protrusion 175V. For example, the upper end of the diffusion barrier layer 177 may be coplanar with the upper surface of the first insulating layer 170.

[0102] Figure 12 The magnetic storage element ME of the medium magnetic storage device 10f can be with Figure 5 The magnetic storage element ME of the magnetic storage device 10 is the same as that of the first insulating layer 170, except for the upper part of the first insulating layer 170.

[0103] The upper surface Sa of the upper electrode 160 can be obtained from Figure 12 The first insulating layer 170 is exposed, and the first insulating layer 170 may be configured to surround the side surface of the magnetic storage element ME.

[0104] Bit line BL can be configured to directly contact the exposed upper surface Sa of upper electrode 160.

[0105] Accordingly, the via that penetrates the first insulating layer 170 between the upper electrode 160 and the bit line BL can be omitted.

[0106] When the first insulating layer 170 exposes the upper surface Sa of the upper electrode 160, the height of the upper end of the first insulating layer 170 can be greater than the height of the upper end Sc of the protrusion 175V of the shielding structure 175. Therefore, even if the bit line BL is configured to directly contact the upper surface Sa of the upper electrode 160, it can still be vertically spaced from the upper end Sc of the shielding structure 175. The upper end of the first insulating layer 170 can protrude beyond the upper end Sc of the protrusion 175V of the shielding structure 175 to surround the entire side surface of the upper electrode 160, and the upper end of the first insulating layer 170 can be set at the same height as the upper surface Sa of the upper electrode 160.

[0107] Figure 13 The magnetic storage device 10g in the middle can be with Figure 4 It is the same as the magnetic storage device 10 in the middle, except for the second interlayer insulating layer 130 and the lower contact portion.

[0108] Figure 13 The magnetic storage device 10g may include an upper pad 137 on the first interlayer insulating layer 120 having the same thickness as the source line SL.

[0109] The upper pad 137 can be formed by patterning the same metal layer as the source line SL, but example embodiments are not limited thereto.

[0110] The second interlayer insulating layer 130 may be configured to cover the pad 137. The thickness of the second interlayer insulating layer 130 may be less than the thickness of the first interlayer insulating layer 120 and the third interlayer insulating layer 140, but exemplary embodiments are not limited thereto.

[0111] The lower electrode 145 of the magnetic storage element ME can be disposed on the upper part of the second interlayer insulating layer 130.

[0112] When the second interlayer insulating layer 130 is etched to a predetermined depth, exposing the upper pad 137 underneath, the lower electrode 145 can be configured to contact the upper pad 137.

[0113] Accordingly, the lower electrode 145 may include a contact protrusion 145c extending downward in the second interlayer insulating layer 130 and contacting the upper pad 137, and the lower electrode 145 (e.g., the contact protrusion 145c) may be configured to extend along the Z direction.

[0114] The upper portion of the lower electrode 145 and the contact protrusion 145c below the upper portion may be made of the same material and may be integral. Due to the difference in width between the upper portion of the lower electrode 145 and the contact protrusion 145c, a curved portion (e.g., a step) may be included. For example, the width of the upper portion of the lower electrode 145 may be greater than the width of the contact protrusion 145c, but the exemplary embodiments are not limited thereto.

[0115] As described above, by forming the lower contact portion in the form of a pad instead of a long columnar via like the contact plug 125, the thickness of the second interlayer insulating layer 130 can be minimized.

[0116] In the following text, reference will be made to Figures 14A to 14G Description of manufacturing Figure 4 Methods for magnetic storage devices. Figures 14A to 14G It shows along Figure 2 The cross section intercepted by line I-I'.

[0117] refer to Figure 14AA device isolation film 102 can be formed on the substrate 101. The device isolation film 102 can be formed using a shallow trench isolation (STI) process. A gate insulating layer 104, a word line WL, and a gate mask layer 105 can be sequentially disposed on the substrate 101, and the gate insulating layer 104, word line WL, and gate mask layer 105 can be patterned using a photolithography process to form a gate 106 on the substrate 101. The gate insulating layer 104 can be formed using silicon oxide or metal oxide. The word line WL can be formed using doped polysilicon or metal. The gate mask layer 105 can be formed using silicon nitride.

[0118] Subsequently, using the gate 106 on the substrate 101 as an ion implantation mask, an impurity region 110 can be formed in the region near the gate 106 by an ion implantation process. The impurity region 110 can be used as the source / drain region of a transistor including the gate 106.

[0119] A transistor can be formed between the gate 106 and the impurity regions 110 (e.g., a first impurity region and a second impurity region). Meanwhile, spacers 107 can be formed using silicon nitride on the sidewalls of the gate 106.

[0120] Subsequently, a first interlayer insulating layer 120 surrounding the gate 106 and the spacer 107 can be formed on the substrate 101. The first interlayer insulating layer 120 can be partially etched to form a first hole exposing the impurity region 110.

[0121] Subsequently, a first conductive layer filling the first hole can be formed on the first interlayer insulating layer 120, and the upper part of the first conductive layer can be removed by chemical mechanical polishing and / or etching back until the first interlayer insulating layer 120 is exposed, thereby forming a contact plug 125 formed in the first hole. Each contact plug 125 can contact the impurity region 110 respectively. The first conductive layer can be formed using doped polysilicon, metal, etc. The contact plug 125 can be used as the contact portion of the source line SL.

[0122] A second conductive layer that contacts the contact plug 125 can be formed on the first interlayer insulating layer 120 and patterned to form a source line SL. The second conductive layer can be formed using doped polysilicon, metal, or the like. Subsequently, a second interlayer insulating layer 130 covering the source line SL can be formed on the first interlayer insulating layer 120. The second interlayer insulating layer 130 can be partially etched to form a second hole exposing the contact plug 125, and a third conductive layer filling the second hole can be formed on the contact plug 125 and the second interlayer insulating layer 130. The upper part of the third conductive layer can be removed by a mechanical chemical polishing process and / or an etch-back process until the second interlayer insulating layer 130 is exposed, thereby forming the lower contact portion 135 formed within the second hole.

[0123] refer to Figure 14BA preliminary lower electrode layer 145P can be formed on the second interlayer insulating layer 130 and the lower contact portion 135. The preliminary lower electrode layer 145P can be formed using conductive materials such as titanium, tantalum, ruthenium, titanium nitride, tantalum nitride, or tungsten through atomic layer deposition, chemical vapor deposition, or other processes. For example, the preliminary lower electrode layer 145P can have a bilayer structure such as ruthenium / titanium, ruthenium / tantalum, ruthenium / titanium nitride, ruthenium / tantalum nitride, or titanium nitride / tungsten.

[0124] A preliminary lower magnetic layer 152P, a preliminary tunnel barrier layer 154P, a preliminary upper magnetic layer 156P, and a preliminary upper electrode layer 160P can be sequentially formed on the preliminary lower electrode layer 145P. The preliminary lower magnetic layer 152P, the preliminary tunnel barrier layer 154P, the preliminary upper magnetic layer 156P, and the preliminary upper electrode layer 160P can be formed by chemical vapor deposition or atomic layer deposition.

[0125] A mask pattern ML corresponding to the position of the lower contact 135 can be formed on the initial upper electrode layer 160P. The mask pattern ML can be a photoresist pattern or a hard mask pattern including silicon oxide, silicon nitride, etc.

[0126] refer to Figure 14C It can be done by using Figure 14B The mask pattern ML shown is patterned as an etching mask to form a magnetic tunnel junction pattern 150 consisting of a lower electrode 145, a lower magnetic layer 152, a tunnel barrier layer 154, an upper magnetic layer 156, and an upper electrode 160. In this case, at least a portion of the lower electrode 145 can be patterned. After the magnetic tunnel junction pattern 150 is patterned, a first insulating layer 170 covering all side surfaces of the lower electrode 145, the magnetic tunnel junction pattern 150, and the upper electrode 160, as well as the upper surface of the upper electrode 160, can be formed on the second interlayer insulating layer 130.

[0127] As the thickness of the upper electrode 160 decreases, the bit line BL (see...) Figure 4 The distance between the upper magnetic layer 156 and the magnetic tunnel junction pattern 150 becomes closer. If the upper magnetic layer 156 is a free layer, the efficiency of switching the magnetization direction of the free layer during the writing process is improved as the distance becomes closer.

[0128] Patterning can be performed using dry etching. Specifically, patterning can be performed using a light element ion etching process or a light element ion plasma etching process. For example, at least one gas selected from hydrogen (H2), helium (He), nitrogen (N2), argon (Ar), and neon (Ne) can be used to prepare the light elements. During the etching process, the upper surface of the second interlayer insulating layer 130 exposed between the magnetic tunnel junction patterns 150 may be recessed.

[0129] A first insulating layer 170 can be formed covering the upper and side surfaces of the patterned magnetic storage element ME. The first insulating layer 170 may include silicon nitride or silicon oxide. The first insulating layer 170 can be deposited to a specific thickness tb (see [reference]). Figure 5 ), and conformally deposited along the magnetic storage element ME.

[0130] A second thickness ta can be formed on the first insulating layer 170 (see...) Figure 5 The initial shielding layer is 175P.

[0131] A preliminary shielding layer 175P can be formed by depositing a weakly magnetic material to achieve a second thickness ta, and the preliminary shielding layer 175P can be formed to cover the entire first insulating layer 170. Therefore, the preliminary shielding layer 175P can be deposited as a sheet on the upper surface of the second interlayer insulating layer 130 and can be conformally shaped to cover the magnetic storage element ME.

[0132] refer to Figure 14D A preliminary third interlayer insulating layer 140P can be formed on the preliminary shielding layer 175P. The preliminary third interlayer insulating layer 140P can cover the entire preliminary shielding layer 175P, cover the upper end of the magnetic storage element ME, and be formed to have sufficient thickness.

[0133] The initial third interlayer insulation layer 140P can be deposited as a material comprising the same material as the first interlayer insulation layer 120 and the second interlayer insulation layer 130, but exemplary embodiments thereof are not limited thereto.

[0134] refer to Figure 14E A portion of the preliminary third interlayer insulating layer 140P can be removed to expose the upper surface of the preliminary shielding layer 175P on the upper electrode 160. Removal of the preliminary third interlayer insulating layer 140P can be performed using an etch-back process. In this case, a portion of the upper surface and side surface of the preliminary shielding layer 175P covering the magnetic storage element ME can be exposed. In this case, the etched surface SP of the preliminary third interlayer insulating layer 140P can be etched to overlap with the side surface of the upper electrode 160 in a plane (e.g., in the horizontal direction). For example, it can be located at a height higher than the upper surface of the magnetic tunnel junction pattern 150.

[0135] refer to Figure 14F The initial shielding layer 175P exposed by the initial third interlayer insulating layer 140P can be etched to form the shielding structure 175.

[0136] The initial shielding layer 175P disposed on the first insulating layer 170 covering the magnetic storage element ME can be etched to the etched surface SP of the initial third interlayer insulating layer 140P (see [reference]). Figure 14EThis exposes a portion of the side surface of the first insulating layer 170.

[0137] In this case, a portion of the initial shielding layer 175P can be removed by wet etching, and in this case, the upper surface of the protrusion 175V of the shielding structure 175 can be formed to be recessed downward from the upper surface of the first insulating layer 170 to a predetermined depth.

[0138] Therefore, the shielding structure 175 can be formed to include a plate portion 175H and a protrusion 175V, and the upper end of the protrusion 175V can be located at a height higher than the height of the upper surface of the magnetic tunnel junction pattern 150.

[0139] refer to Figure 14G Insulating material can be further deposited on the initial third interlayer insulation layer 140P to form the third interlayer insulation layer 140.

[0140] The third interlayer insulating layer 140 can be formed to cover the upper surface of the first insulating layer 170, and then polished until the upper surface of the first insulating layer 170 is exposed.

[0141] Reference Figure 4 A portion of the exposed upper surface of the first insulating layer 170 can be removed to form an upper via 190, and metal wiring can be formed on the upper via 190 to form a bit line BL.

[0142] According to embodiments of the present disclosure, a method for manufacturing a magnetic storage device can be provided, the method comprising: forming a lower magnetic layer, a tunnel barrier layer, and an upper magnetic layer on a substrate; forming a magnetic tunnel junction pattern by patterning the lower magnetic layer, the tunnel barrier layer, and the upper magnetic layer; forming a first insulating layer covering the substrate and the magnetic tunnel junction pattern; and forming a shielding structure on the first insulating layer, the shielding structure including a plate region covering the substrate and a protrusion surrounding the magnetic tunnel junction pattern.

[0143] Forming a shielding structure may include: covering a first insulating layer with a preliminary shielding layer; covering the preliminary shielding layer with a preliminary interlayer insulating layer; exposing at least a portion of the preliminary shielding layer by etching a portion of the preliminary interlayer insulating layer; and forming a shielding structure by etching a portion of the exposed preliminary shielding layer.

[0144] Etching a portion of the preliminary interlayer insulating layer may include etching the preliminary interlayer insulating layer back to a height equal to or higher than the height of the magnetic tunnel junction pattern.

[0145] Etching a portion of the initial shielding layer may include wet etching.

[0146] The shielding structure may include: a plate portion located in a separation space between multiple magnetic storage elements on a substrate; and a protrusion extending from the plate portion and surrounding the magnetic tunnel junction pattern.

[0147] The plate portion may have a first thickness, and the protrusion portion may have a second thickness, wherein the first thickness and the second thickness may be the same.

[0148] The magnetic material of the plate portion can be the same as the magnetic material of the protrusion portion.

[0149] The method of manufacturing a magnetic storage device may further include: forming a lower electrode and an upper electrode by patterning. The lower electrode may be on a substrate, below the magnetic tunnel junction pattern, while the upper electrode may be on the magnetic tunnel junction pattern.

[0150] The upper surface of each protrusion can be etched to overlap with the upper electrode in the horizontal direction.

[0151] The shielding structure may include a material with a lower remanence than the remanence of the upper magnetic layer.

[0152] Figure 15 and Figure 16 This is a block diagram illustrating an electronic device including a magnetic storage device according to an example embodiment of the present disclosure.

[0153] Figure 15 An electronic device 1000 including a magnetic storage device is shown according to an example embodiment of the present disclosure.

[0154] refer to Figure 15 The electronic device 1000 according to this embodiment may include a control unit 1010 (e.g., a controller), an interface 1020, an input / output device 1030, a memory 1040, etc. The control unit 1010, interface 1020, input / output device 1030, memory 1040, etc., may be connected via a bus 1050, which provides the path for data transmission.

[0155] The control unit 1010 may include at least one microprocessor, digital signal processor, microcontroller, etc. The memory 1040 may include elements capable of reading and writing data in various ways, and the control unit 1010 and memory 1040 may include the components described above. Figures 1 to 13 Any of the various embodiments of the described magnetic storage device.

[0156] Input / output device 1030 may include a keypad, keyboard, touchscreen device, display device, audio input / output module, etc. Interface 1020 may be a module for sending and receiving data to and from a communication network, and may include an antenna, wired or wireless transceiver, etc. In addition, besides... Figure 15In addition to the components shown, the electronic device 1000 may also include an application chipset, an image capture device, etc. Figure 15 The category of the electronic device 1000 shown is not limited and can be various devices, such as personal digital assistants (PDAs), portable computers, mobile phones, cordless phones, laptops, memory cards, portable media players, tablet PCs, etc.

[0157] Figure 16 This is a block diagram illustrating a storage device 1100 including a magnetic storage device according to an example embodiment of the present disclosure.

[0158] refer to Figure 16 The storage device 1100 according to the example embodiment may include a controller 1110 communicating with a host 1150 and memories 1120, 1130, and 1140 for storing data. The controller 1110 and the respective memories 1120, 1130, and 1140 may include, according to the reference above... Figures 1 to 13 The magnetic storage elements of various exemplary embodiments of the present disclosure are described.

[0159] The host 1150 communicating with the controller 1110 can be various electronic devices equipped with storage devices 1100, such as smartphones, digital cameras, desktop computers, laptop computers, media players, etc. The controller 1110 can receive data write or read requests sent from the host 1150 and generate commands (CMDs) to store data in or retrieve data from the memories 1120, 1130, and 1140.

[0160] like Figure 16 As shown, one or more memories 1120, 1130, and 1140 within storage device 1100 can be connected in parallel to controller 1110. By connecting multiple memories 1120, 1130, and 1140 in parallel to controller 1110, storage device 1100 with a large capacity can be realized.

[0161] According to some embodiments of this disclosure, magnetic storage devices can shield two types of external magnetic fields in the vertical and horizontal directions by forming an integral shielding structure to cover the side surface of the magnetic storage element and the upper surface of the substrate.

[0162] Furthermore, by including a material in the shielding structure with a lower remanence than the magnetic material included in the magnetic tunnel junction pattern, the impact of the shielding structure on the magnetic storage element can be minimized.

[0163] When the shielding structure is formed as an integral structure including a horizontal portion and a vertical portion, the horizontal portion can be formed to have the same thin thickness as the vertical portion, thereby minimizing the signal delay caused by a thick shielding structure.

[0164] The various advantages and effects of the embodiments of this disclosure are not limited to those described above, and other various advantages and effects of the embodiments of this disclosure will be more readily understood in the process of describing the exemplary embodiments of this disclosure. Although exemplary embodiments have been shown and described above, it will be clear to those skilled in the art that modifications and variations can be made without departing from the spirit and scope of this disclosure.

Claims

1. A magnetic storage device, comprising: substrate; Magnetic storage elements are spaced apart from each other on the substrate, and the magnetic storage elements include a magnetic tunnel junction pattern; as well as A shielding structure surrounds the magnetic storage element in the horizontal direction. The shielding structure includes: The plate portion, between the magnetic storage elements; and A protrusion protrudes from the plate portion and surrounds the magnetic storage element in the horizontal direction.

2. The magnetic storage device according to claim 1, wherein, The plate portion has a first thickness. The protrusion is located on the side surface of the magnetic storage element, and the protrusion has a second thickness. The first thickness is the same as the second thickness.

3. The magnetic storage device according to claim 1, wherein, The plate portion extends in the horizontal direction, and the protrusion extends from the plate portion in a vertical direction intersecting the horizontal direction.

4. The magnetic storage device according to claim 1, wherein, The upper surface of the magnetic storage element is exposed from the protrusion.

5. The magnetic storage device according to claim 1, wherein, The plate portion includes a magnetic material, and the protrusion includes the same magnetic material as the plate portion.

6. The magnetic storage device according to claim 1, wherein, The magnetic storage element further includes: A lower electrode is provided on the substrate, wherein the magnetic tunnel junction pattern is provided on the lower electrode; and The upper electrode is located on the magnetic tunnel junction pattern. The magnetic tunnel junction pattern includes a lower magnetic layer, a tunnel barrier layer, and an upper magnetic layer.

7. The magnetic storage device according to claim 6, wherein, The protrusion includes: Inner surface, facing the magnetic storage element; The outer surface, opposite to the inner surface; and The upper surface, between the inner surface and the outer surface, The upper surface of the protrusion overlaps horizontally with the upper electrode.

8. The magnetic storage device according to claim 7, wherein, The height of the upper surface of the protrusion is the same as the height of the lower surface of the upper electrode.

9. The magnetic storage device according to claim 6, wherein, The shielding structure comprises a material with a lower remanence than the upper magnetic layer.

10. The magnetic storage device according to claim 1, wherein, The shielding structure includes cobalt.

11. The magnetic storage device according to claim 1, wherein, The magnetic storage device further includes a first insulating layer between the shielding structure and the magnetic storage element.

12. The magnetic storage device according to claim 11, wherein, The magnetic storage device further includes a diffusion barrier layer between the shielding structure and the first insulating layer.

13. The magnetic storage device according to claim 12, wherein, The height of the upper end of the diffusion barrier layer is the same as the height of the upper surface of the protrusion of the shielding structure.

14. The magnetic storage device according to claim 12, wherein, The height of the upper end of the diffusion barrier layer is higher than the height of the upper surface of the protrusion of the shielding structure.

15. A magnetic storage device, comprising: substrate; Select the component on the substrate; A lower interlayer insulating layer is present on the selected element; Magnetic storage elements, spaced apart from each other on the lower interlayer insulating layer, are connected to the selection element and include a magnetic tunnel junction pattern; as well as A shielding structure surrounds the magnetic storage element in the horizontal direction. The shielding structure includes: The plate portion extends in the horizontal direction, which is parallel to the upper surface of the lower interlayer insulating layer; and A protrusion extends from the plate portion in a vertical direction intersecting the horizontal direction, the protrusion surrounding the side surface of the magnetic storage element in the horizontal direction.

16. The magnetic storage device according to claim 15, wherein, The magnetic storage element further includes: A lower electrode is provided on the substrate, wherein the magnetic tunnel junction pattern is provided on the lower electrode; and The upper electrode is located on the magnetic tunnel junction pattern, and The magnetic tunnel junction pattern includes a lower magnetic layer, a tunnel barrier layer, and an upper magnetic layer.

17. The magnetic storage device according to claim 16, wherein, The lower magnetic layer includes: A first lower magnetic layer is formed on the lower electrode and has a fixed magnetization direction; and The second lower magnetic layer is located on top of the first lower magnetic layer. The material of the second lower magnetic layer is the same as that of the upper magnetic layer, and the second lower magnetic layer has the same magnetization direction as the upper magnetic layer.

18. The magnetic storage device according to claim 16, wherein, The residual magnetism of the material of the shielding structure is lower than that of the upper magnetic layer.

19. The magnetic storage device according to claim 15, wherein, The protrusions of the shielding structure overlap with the magnetic tunnel junction pattern in the horizontal direction to completely surround the side surface of the magnetic tunnel junction pattern.

20. A magnetic storage device, comprising: substrate; Select the component on the substrate; A lower interlayer insulating layer is present on the selected element; Magnetic storage elements, spaced apart from each other on the lower interlayer insulating layer, are connected to the selection element and include a magnetic tunnel junction pattern; A first insulating layer is on the upper surface of the lower interlayer insulating layer and on the magnetic storage element; as well as A shielding structure extends on the first insulating layer in a horizontal direction and a vertical direction intersecting the horizontal direction, and surrounds the side surface of the magnetic storage element in the horizontal direction. The upper surface of the magnetic storage element is exposed from the shielding structure.

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