Semiconductor device and method of manufacturing the same

Abstract

A semiconductor device and a method of manufacturing the same are provided. The device includes a first field effect transistor, a second field effect transistor, a buried oxide layer, and a doped layer disposed on a support substrate, respectively. The first and second field effect transistors include a plurality of channel layers, source / drain layers, and gate stacks stacked apart from each other. The source / drain layers are in contact with the plurality of channel layers on opposite sides of the plurality of channel layers in a first direction. The gate stacks extend across the plurality of channel layers in a second direction that intersects the first direction. The buried oxide layer between a lowermost channel layer of the first field effect transistor and the support substrate is contiguous with the lowermost channel layer of the first field effect transistor. The doped layer between a lowermost channel layer of the second field effect transistor and the support substrate is contiguous with the lowermost channel layer of the second field effect transistor. A crystal plane orientation of the plurality of channel layers of the first field effect transistor is different from a crystal plane orientation of the plurality of channel layers of the second field effect transistor.

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