Solar cell and method of manufacturing the same, stacked cell, photovoltaic module

Abstract

The application relates to the technical field of solar cells, in particular to a solar cell, a manufacturing method thereof, a laminated cell and a photovoltaic module. In the embodiment of the application, the solar cell comprises a substrate and a first passivation layer. The substrate has a first surface and a second surface oppositely arranged along a first direction, and a side surface connecting the first surface and the second surface. A plurality of recesses are arranged on the side surface along a second direction, and the first direction intersects the second direction. The first passivation layer is arranged on the wall surface of the recesses. Therefore, the performance of the solar cell can be improved.

Description

Technical Field

[0001] This application relates to the field of solar cell technology, and in particular to solar cells and their manufacturing methods, tandem cells, and photovoltaic modules. Background Technology

[0002] A solar cell is a device that converts solar energy into electrical energy. Specifically, a solar cell uses the photovoltaic principle to generate charge carriers, and then uses electrodes to extract these carriers, thus facilitating the efficient use of electrical energy. However, the performance of solar cells needs further improvement. Summary of the Invention

[0003] Therefore, it is necessary to provide a solar cell and its manufacturing method, a tandem cell, and a photovoltaic module to improve the performance of solar cells.

[0004] According to one aspect of this application, an embodiment of this application provides a solar cell, including a substrate and a first passivation layer. The substrate has a first surface and a second surface disposed opposite to each other along a first direction, and a side surface connecting the first surface and the second surface. A plurality of recesses are provided on the side surface, spaced apart along a second direction, the first direction and the second direction intersecting. The first passivation layer is disposed on the wall surface of the recesses.

[0005] In some embodiments, the recess has a first end and a second end disposed opposite to each other along a first direction. Specifically, the first end of at least one recess is located on a first surface; and / or, the second end of at least one recess is located on a second surface.

[0006] In some embodiments, the plurality of recesses includes a first recess. A first end of the first recess is located on a first surface, and a second end of the first recess is located on a second surface.

[0007] In some embodiments, the plurality of recesses include a second recess and a third recess. A first end of the second recess is located on a first surface, and a second end of the second recess is spaced apart from the second surface. A first end of the third recess is spaced apart from the first surface, and a second end of the third recess is located on the second surface. Wherein, along a second direction, the second and third recesses are alternately arranged; and / or, along the second direction, the second and third recesses have overlapping portions; and / or, along the first direction, the second recess has a dimension of H1, the third recess has a dimension of H2, and the base has a dimension of H3; H1 / H3 is 0.5 to 0.8, and / or, H2 / H3 is 0.5 to 0.8.

[0008] In some embodiments, the recessed dimension relative to the side surface is D1, and the dimension of the recessed portion along the second direction is D2. Wherein, 0.3≤D1 / D2≤0.8; and / or, D1 is 90μm to 250μm; and / or, D2 is 300μm to 500μm.

[0009] In some embodiments, along the second direction, the size of the base is L1, the total size of all recesses is L2, and 0.5 ≤ L1 / L2 ≤ 0.85; and / or, along the second direction, the distance between two adjacent recesses is 50 μm to 500 μm.

[0010] In some embodiments, the cross-sectional shape of the recess includes at least one of a polygonal shape and a curved shape. The cross-section of the recess is perpendicular to the first direction.

[0011] In some embodiments, the solar cell further includes a second passivation layer. The second passivation layer is disposed on a side surface and on a side opposite to the substrate of the first passivation layer.

[0012] In some embodiments, the materials of the first passivation layer and the second passivation layer are different.

[0013] In some embodiments, the first surface includes alternating first and second regions, with a side connected to a second region located at the edge of the first surface. The solar cell also includes a doped region disposed in the first region. A first passivation layer is further disposed on the side of the doped region opposite to the second surface and on the second region.

[0014] In some embodiments, the base includes a central region and two edge regions, the two edge regions being located on either side of the central region along a first direction. A first pyramidal structure located on the central region and a second pyramidal structure located on the edge regions are also provided on the wall surface of the recess. The height of the first pyramidal structure is less than or equal to the height of the second pyramidal structure; and / or, the one-dimensional dimension of the base of the first pyramidal structure is less than or equal to the one-dimensional dimension of the base of the second pyramidal structure.

[0015] According to another aspect of this application, an embodiment of this application provides a method for manufacturing a solar cell, used to manufacture the solar cell in any of the above embodiments. The method for manufacturing a solar cell includes: providing a first intermediate for a solar cell, the first intermediate for a solar cell including a substrate; performing a first laser treatment on the first intermediate for a solar cell to form a plurality of hole structures, thereby obtaining a second intermediate for a solar cell; forming a first passivation layer on the wall surface of the plurality of hole structures of the second intermediate for a solar cell, thereby obtaining a third intermediate for a solar cell; and performing laser cutting on the third intermediate for a solar cell based on the plurality of hole structures to form a solar cell.

[0016] In some embodiments, the laser used in the first laser processing is defined as the first laser, and the laser used in the laser cutting processing is defined as the second laser. The power P1 of the first laser and the power P2 of the second laser satisfy: 1 ​​≤ P1 / P2 ≤ 1.5; and / or, the spot area A1 of the first laser and the spot area A2 of the second laser satisfy: 90 ≤ A1 / A2 ≤ 250.

[0017] According to another aspect of this application, embodiments of this application provide a tandem battery, including a first battery and a second battery stacked on the first battery. The first battery includes a solar cell as described in any of the above embodiments; or, the first battery includes a solar cell manufactured using the method for manufacturing solar cells as described in any of the above embodiments.

[0018] According to another aspect of this application, an embodiment of this application provides a photovoltaic module, including: a solar cell as described in any of the above embodiments; or a solar cell manufactured by a method for manufacturing a solar cell as described in any of the above embodiments; or a tandem cell as described in any of the above embodiments.

[0019] In the aforementioned solar cells, their fabrication methods, tandem cells, and photovoltaic modules, the presence of multiple recesses on the side of the substrate helps reduce the area of ​​the sectional cutting surfaces during solar cell formation, thereby minimizing cutting damage. Simultaneously, by creating a first passivation layer on the walls of the recesses, forming a discontinuous first passivation layer, not only is the recombination of photogenerated carriers at the side reduced, but the stress in the first passivation layer is also reduced, thus improving its structural stability. This, in turn, enhances the performance of the solar cell.

[0020] Additional aspects and advantages of embodiments of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of embodiments of this application. Attached Figure Description

[0021] Various other advantages and benefits will become apparent to those skilled in the art upon reading the detailed description of the embodiments described below. The accompanying drawings are for illustrative purposes only and are not intended to limit the scope of this application. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings:

[0022] Figure 1 This is a cross-sectional view of a solar cell in some embodiments of this application from one perspective.

[0023] Figure 2 This is a schematic diagram of the structure of a solar cell in some embodiments of this application from another perspective;

[0024] Figure 3 for Figure 2 A magnified schematic diagram of the local structure at point G1;

[0025] Figure 4 This is a schematic diagram of the structure of the substrate in some embodiments of this application from one viewpoint;

[0026] Figure 5This is a schematic diagram of the structure of the substrate and the first passivation layer in some embodiments of this application from one view.

[0027] Figure 6 This is a schematic diagram of the structure of the substrate in some other embodiments of this application from one view.

[0028] Figure 7 This is a partially enlarged structural diagram of a solar cell in another embodiment of this application from another perspective;

[0029] Figure 8 This is a partially enlarged structural schematic diagram of a solar cell in some embodiments of this application from another perspective;

[0030] Figure 9 This is a cross-sectional view of a solar cell in one of the embodiments of this application.

[0031] Figure 10 for Figure 9 The diagram shows a partially enlarged view of the solar cell from another perspective;

[0032] Figure 11 This is a partial structural diagram of the side surface of the substrate in some embodiments of this application;

[0033] Figure 12 This is a three-dimensional structural diagram of the pyramid-shaped structure in some embodiments of this application;

[0034] Figure 13 This is a schematic flowchart illustrating the method for manufacturing a solar cell in some embodiments of this application;

[0035] Figure 14 This is a schematic diagram of the structure of the first intermediate of the solar cell in some embodiments of this application;

[0036] Figure 15 This is a schematic diagram of the structure of the first intermediate of the solar cell in some other embodiments of this application;

[0037] Figure 16 This is a schematic diagram of the structure of the second intermediate of the solar cell in some embodiments of this application from one view.

[0038] Figure 17 This is a schematic diagram of the structure of the second intermediate of the solar cell in some embodiments of this application from another perspective;

[0039] Figure 18 This is a schematic diagram of the structure of the second intermediate of the solar cell in some other embodiments of this application from one view.

[0040] Figure 19This is a schematic diagram of the structure of the second intermediate of the solar cell in some other embodiments of this application from another perspective;

[0041] Figure 20 This is a schematic diagram of the structure of the third intermediate of the solar cell in some embodiments of this application from one view.

[0042] Figure 21 This is a schematic diagram of the structure of the third intermediate of the solar cell in some embodiments of this application from another perspective;

[0043] Figure 22 for Figure 21 A magnified schematic diagram of the local structure at point G2;

[0044] Figure 23 This is a schematic diagram of the structure of a solar cell in some embodiments of this application from one viewpoint;

[0045] Figure 24 This is a schematic diagram of the structure of the side of a solar cell in some embodiments of this application;

[0046] Figure 25 This is a schematic diagram of the structure of a solar cell in some other embodiments of this application;

[0047] Figure 26 This is a schematic diagram of the structure of a photovoltaic module in some embodiments of this application.

[0048] Explanation of reference numerals in the attached figures:

[0049] Solar cells 100, 100A;

[0050] Bases 110 and 110a, dimensions H3 and L1, middle region mz, ​​edge region bz, first surface m1, first region z1, second region z2, second surface m2, side surface m3, recesses 1101, 1101a, 1101b, and 1101c, dimensions D1, D1a, D1b, D2, D2a, and D2b, total dimension L2, distances W, Wa, and Wb, first recess 11011, second recess 11012, dimension H1, third recess 11013, dimension H2, overlapping portion P, first end e1, second end e2, pyramid structure J, height S1, one-dimensional dimension S2, first pyramid structure J1, and second pyramid structure J2;

[0051] First passivation layer 120;

[0052] Second passivation layer 130;

[0053] Doped region 140, first doped region 140a, second doped region 140b, tunneling layer 141, doped semiconductor layer 142;

[0054] First electrode 150;

[0055] Second electrode 160;

[0056] Steps S110, S120, S130, S140;

[0057] First intermediates 101a and 101b of solar cells;

[0058] The second intermediates of the solar cell, 102a and 102b, have pore structures ka and kb.

[0059] The third intermediate of the solar cell is 103, the first passivation layer is 1031, and the cutting line is R;

[0060] Solar cells 104, 104a, recess 1041, second passivation layer 1042, cut surface q;

[0061] Photovoltaic module 10, cell string 11, encapsulation layer 12, cover plate 13, conductive strip 14;

[0062] First direction F1, second direction F2, third direction F3. Detailed Implementation

[0063] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0064] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0065] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0066] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can be a mechanical connection or an electrical connection; they can be a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. It is worth noting that in the following description and the appended claims, "electrical connection" between one feature and another not only includes direct contact between the two features to form an electrical energy transmission or current transmission channel, but also includes an intermediate feature between the two features, which, along with the intermediate feature, forms an electrical energy transmission or current transmission channel to achieve electrical energy transmission or transmission. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0067] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0068] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.

[0069] In the accompanying drawings, the thicknesses of layers, films, regions, substrates, etc., are exaggerated for clarity. Throughout the specification, the same reference numerals refer to the same elements. It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it may be directly on the other element or there may be intervening elements. Conversely, when an element is referred to as being "directly on" another element, there are no intervening elements.

[0070] In addition, embodiments of the application are described with reference to cross-sectional views, which are schematic diagrams of some embodiments of the application, thus allowing for the expectation of variations in the illustrated shape due to, for example, manufacturing techniques and / or tolerances. Therefore, embodiments of the application should not be limited to the specific shape of the area shown herein, but should include shape deviations due to, for example, manufacturing techniques.

[0071] Furthermore, the use of terms such as "same," "equal," or "consistent" regarding dimensions in the description of the embodiments of this application does not require absolute mathematical or geometric precision. Given the actual manufacturing, measurement, and material factors, those skilled in the art should understand that the aforementioned dimensional terms include deviations within permissible limits or unavoidable deviations. As long as such deviations do not affect the realization of the corresponding dimensions' function and technical effect in this application, they should be considered to fall within the meaning of "same dimensions" as described in the embodiments of this application.

[0072] Please refer to Figure 1 , Figure 1 This is a cross-sectional view of a solar cell 100 in some embodiments of this application from one perspective. Embodiments of this application provide a solar cell 100, including a substrate 110 and a first passivation layer 120.

[0073] The substrate 110 is used to receive incident light and generate photogenerated carriers. The substrate 110 can be selected according to actual needs. Exemplarily, the substrate 110 can be a silicon substrate, which may include one or more of monocrystalline silicon, polycrystalline silicon, amorphous silicon, or microcrystalline silicon. The doping type of the substrate 110 is not specifically limited. For example, the substrate 110 can be an N-type doped silicon substrate, or it can be a P-type doped silicon substrate; there is no specific limitation in this regard. The N-type doping element can be a group V element such as phosphorus (P), bismuth (Bi), antimony (Sb), or arsenic (As), and the P-type doping element can be a group III element such as boron (B), aluminum (Al), gallium (Ga), or indium (In). In the embodiments of this application, the substrate 110 can be an N-type monocrystalline silicon wafer, which can improve the conversion efficiency of the solar cell 100 and reduce manufacturing costs.

[0074] The base 110 has a first surface m1 and a second surface m2 disposed opposite to each other along a first direction F1, and a side surface m3 connecting the first surface m1 and the second surface m2. Exemplarily, in conjunction with reference to... Figure 1 The first surface m1 and the second surface m2 are arranged opposite each other along the thickness direction of the substrate 110. The thickness direction of the substrate 110 is... Figure 1 The first direction F1 is shown in the diagram. For example, the first surface m1 is the backlight surface, and the second surface m2 is the light-receiving surface. Or, for another example, the first surface m1 is the light-receiving surface, and the second surface m2 is the backlight surface. It can be understood that the light-receiving surface and the backlight surface are relative terms. The light-receiving surface specifically refers to the surface on the substrate 110 of the solar cell 100 that is primarily exposed to sunlight. The light-receiving surface typically has a surface structure that can increase the light absorption area, improve the photocurrent, and help improve the efficiency of the cell.

[0075] Combined with reference Figures 2 to 4 , Figure 2 This is a schematic diagram of the structure of a solar cell in some embodiments of this application from another perspective. Figure 3 for Figure 2 A magnified schematic diagram of the local structure at point G1. Figure 4 This is a schematic diagram of the base 110 in some embodiments of this application from one viewpoint. A plurality of recesses 1101 are provided on the side surface m3, spaced apart along the second direction F2, where the first direction F1 and the second direction F2 intersect.

[0076] It should be noted that, Figure 1 The view shown is a side view sectional view. Figure 2 The view shown is a top-down view. Figure 1 The viewpoint shown and Figure 2 The perspective shown is relative. Figure 4 The view shown is another side view, for ease of understanding. Figure 4 The diagram only briefly shows the side m3 and the recess 1101, and is not intended to limit the structure of the base 110.

[0077] The side surface m3 connecting the first surface m1 and the second surface m2 has multiple surfaces. It can be that the entire side surface m3 has recesses 1101, or only a portion of the side surface m3 has recesses 1101; no specific limitation is made here. For example, Figure 1 The illustration shows a case where a recess 1101 is provided on the side m3 of the substrate 110 along the third direction F3. In other embodiments, the recess may be provided on both sides of the substrate along the third direction F3, and this is not a specific limitation.

[0078] For example, the second direction F2 and the third direction F3 can be the length direction and the width direction of the base 110, respectively, and the first direction F1, the second direction F2 and the third direction F3 are perpendicular to each other.

[0079] "A recess 1101 is provided on the side m3" defines the position of the recess 1101. The opening edge of the recess 1101 falls within the range of the side m3, and the recess direction of the recess 1101 faces the interior of the base 110.

[0080] The first passivation layer 120 is disposed on the wall surface of the recess 1101. It can be understood that the wall surface of the recess 1101 refers to the side surface (sidewall) of the recessed space forming the recess, and may also include the bottom wall; it is the solid surface constituting the perimeter and bottom of the recess 1101. Because the first passivation layer 120 is disposed on the side surface, Figure 3 The location of the recess 1101 is indicated by a dotted line. This interpretation can be applied to the following text as well.

[0081] The first passivation layer 120 can effectively passivate the wall surface of the recess 1101, reduce the interface state density, reduce minority carrier recombination, thereby improving the carrier transport efficiency at the interface and increasing the efficiency of the solar cell 100. The first passivation layer 120 can also reduce or eliminate reflected light on the surface of the solar cell 100 and increase light transmittance, further improving the photoelectric conversion efficiency of the solar cell 100.

[0082] Combined with reference Figure 5 , Figure 5 This is a schematic diagram of the structure of the substrate 110 and the first passivation layer 120 in some embodiments of this application from one view. Figure 5 The viewpoint shown is the same as Figure 4 The shown viewpoints are from the same perspective. Since multiple recesses 1101 are spaced apart along the second direction F2, that is, the first passivation layer 120 provided on the wall surface of the recesses 1101 is spaced apart along the second direction F2. The first passivation layer 120 provided on the wall surface of the recesses 1101 forms a discontinuous structure.

[0083] For example, the first passivation layer 120 can be deposited using plasma-enhanced chemical vapor deposition (PECVD). Other methods, such as organic chemical vapor deposition, can also be used to form the first passivation layer 120. The first passivation layer 120 can be a single-layer structure, a multilayer structure, or a combination of single-layer and multilayer structures, and the thickness of each layer can be designed accordingly, without limitation. For example, the first passivation layer 120 can be any one or more combinations of silicon nitride, silicon oxynitride, silicon oxide, and aluminum oxide layers, without specific limitation.

[0084] For example, in actual operation, a sample of the solar cell 100 can be prepared, selecting a portion including the side surface m3, the recess 1101, and the first passivation layer 120 disposed on the wall surface of the recess 1101, and a corresponding SEM image can be generated. In the image, it can be seen that at the side surface m3, the first passivation layer 120 is disposed on the wall surface of the recess 1101, and multiple recesses 1101 are arranged at intervals, forming a discontinuous structure of the first passivation layer 120.

[0085] In some detection methods, for the detection of the aforementioned first passivation layer 120 and recess 1101, it is not necessary to detect all areas of the side m3 one by one; only sampling testing is required. Those skilled in the art can reasonably infer and determine the morphology of other areas of the side m3 based on the morphology corresponding to the measured sample. It is understood that the design and layout of each area of ​​the side m3 are regular. For example, in the embodiments of this application, the morphology of other side m3 can be reasonably inferred and obtained by measuring the morphology of one or more side m3 areas.

[0086] Because the edges of the substrate 110 may be susceptible to cutting damage, numerous dangling bonds and interface defects may exist at the edges. By providing multiple recesses 1101 on the side m3 of the substrate 110, during the formation of the solar cell 100, only the area outside the recesses 1101 on the side m3 needs to be cut, and a discontinuous cut surface can be formed. This not only helps to reduce the area of ​​the cut surface of the slab but also helps to disperse the cutting stress. The recesses 1101 form stress-blocking boundaries, which further helps to reduce cutting damage. At the same time, by providing a first passivation layer 120 on the wall surface of the recesses 1101, a discontinuous first passivation layer 120 is formed. This not only reduces the recombination of photogenerated carriers at the side but also helps to reduce the stress of the first passivation layer 120, thereby improving the structural stability of the first passivation layer 120. Thus, the performance of the solar cell 100 can be improved.

[0087] Based on some embodiments of this application, please continue to refer to Figure 4 and Figure 5 The recess 1101 has a first end e1 and a second end e2 disposed opposite to each other along a first direction F1. In some embodiments, the first end e1 of at least one recess 1101 is located on a first surface m1. In other embodiments, the second end e2 of at least one recess 1101 is located on a second surface m2.

[0088] The first end e1 of the recess 1101 is located on the first surface m1, meaning the recess 1101 penetrates the first surface m1. The second end e2 of the recess 1101 is located on the second surface m2, meaning the recess 1101 penetrates the second surface m2. For example, some recesses 1101 may have their first end e1 located on the first surface m1, while others may have their second end e2 located on the second surface m2; alternatively, some recesses 1101 may have their first end e1 located on the first surface m1 and their second end e2 located on the second surface m2; or, a portion of the recesses 1101 may have their first end e1 located on the first surface m1 and their second end e2 located on the second surface m2, while another portion of the recesses 1101 may have their first end e1 located on the first surface m1 and their second end e2 located on the second surface m2, and yet another portion of the recesses 1101 may have their first end e1 located on the second surface m2. No specific limitations are imposed here. Figure 4 and Figure 5 For example, the first end e1 of the recess 1101 is located on the first surface m1 and the second end e2 of the recess 1101 is located on the second surface m2. In this case, the recess 1101 penetrates the first surface m1 and the second surface m2 of the substrate 110.

[0089] When the first end e1 of the recess 1101 is located on the first surface m1, on the one hand, when forming the first passivation layer 120 on the wall of the recess 1101, it is beneficial to improve the passivation quality at the edge region bz near the first surface m1; on the other hand, when cutting to form the solar cell 100, the stress at the first surface m1 can be released, reducing the risk of cracks and leakage at the edge of the first surface m1. When the second end e2 of the recess 1101 is located on the second surface m2, on the one hand, when forming the first passivation layer 120 on the wall of the recess 1101, it is beneficial to improve the passivation quality at the edge region bz near the second surface m2; on the other hand, when cutting to form the solar cell 100, the stress at the second surface m2 can be released, reducing the risk of cracks and leakage at the edge of the second surface m2. When the first end e1 of the recess 1101 is located on the first surface m1 and the second end e2 of the recess 1101 is located on the second surface m2, the material forming the first passivation layer 120 can enter from the first end e1 and the second end e2 of the recess 1101 respectively, which is conducive to forming a more uniform and complete first passivation layer 120.

[0090] Please continue to refer to Figure 4 and Figure 5 According to some embodiments of this application, the plurality of recesses 1101 include a first recess 11011. A first end e1 of the first recess 11011 is located on a first surface m1, and a second end e2 of the first recess 11011 is located on a second surface m2.

[0091] This not only facilitates the formation of the first passivation layer 120, but also facilitates the formation of the recess 1101, making processing easier and improving manufacturing efficiency.

[0092] Please refer to Figure 6 , Figure 6 This is a schematic diagram of the base 110a in some embodiments of this application from one viewpoint. According to some embodiments of this application, the plurality of recesses 1101 include a second recess 11012 and a third recess 11013. The first end e1 of the second recess 11012 is located on the first surface m1, and the second end e2 of the second recess 11012 is spaced apart from the second surface m2. The first end e1 of the third recess 11013 is spaced apart from the first surface m1, and the second end e2 of the third recess 11013 is located on the second surface m2. In some embodiments, the second recess 11012 and the third recess 11013 are alternately arranged along the second direction F2. In other embodiments, the second recess 11012 and the third recess 11013 have an overlapping portion P along the second direction F2. In some other embodiments, along the first direction F1, the second recess 11012 has a size of H1, the third recess 11013 has a size of H2, and the base 110 has a size of H3; H1 / H3 is 0.5 to 0.8, and / or, H2 / H3 is 0.5 to 0.8.

[0093] "Along the second direction F2, the second recessed portions 11012 and the third recessed portions 11013 are alternately arranged" may mean, the second recessed portion 11012, the third recessed portion 11013, the second recessed portion 11012, the third recessed portion 11013, the second recessed portion 1 1012...the third recessed part 11013 may also be the third recessed part 11013, the second recessed part 11012, the third recessed part 11013, the second recessed part 11012, the third recessed part 11013...the second recessed part 11012. That is, along the second direction F2, the recess 1101 adjacent to the second recess 11012 is the third recess 11013, and the recess 1101 adjacent to the third recess 11013 is the second recess 11012. A third recess 11013 is provided between two adjacent second recesses 11012 along the second direction F2, and a second recess 11012 is provided between two adjacent third recesses 11013 along the second direction F2.

[0094] Along the second direction F2, the second recess 11012 and the third recess 11013 have an overlapping portion P. That is, from the perspective of the second direction F2, the second recess 11012 and the third recess 11013 have overlapping areas. In other words, within the spatial extension range perpendicular to the second direction F2, the spatial area occupied by the second recess 11012 and the spatial area occupied by the third recess 11013 share a common area. It can be understood that since multiple recesses 1101 are spaced apart along the second direction F2, that is, the second recess 11012 and the third recess 11013 are spaced apart along the second direction F2.

[0095] For example, the second recess 11012 and the third recess 11013 may have an overlapping portion P, or the second recess 11012 and the third recess 11013 may be non-adjacent and have an overlapping portion P. No specific limitation is made here.

[0096] The dimension H1 of the second recess 11012 can be understood as the depth required to form the second recess 11012, the dimension H2 of the third recess 11013 can be understood as the depth required to form the third recess 11013, and the dimension H3 of the substrate 110 can be understood as the thickness of the substrate 110. Exemplarily, H1 / H3 can be 0.5, 0.6, 0.65, 0.7, 0.75, or 0.8. H1 / H3 can also be any other value within the range of 0.5 to 0.8, without specific limitation.

[0097] For example, H2 / H3 can be 0.5, 0.6, 0.65, 0.7, 0.75, or 0.8. H2 / H3 can also be any other value in the range of 0.5 to 0.8, without any specific limitation.

[0098] For example, with Figure 4 For example, the second recess 11012 and the third recess 11013 are arranged in the second direction F2 as “third recess 11013, second recess 11012, third recess 11013, second recess 11012... third recess 11013”. Along the second direction F2, any second recess 11012 and any third recess 11013 have an overlapping portion P.

[0099] By alternating the second recess 11012 and the third recess 11013 along the second direction F2, a more uniform first passivation layer 120 can be formed at the side surface m3. Furthermore, the processing stress at the first surface m1 and the second surface m2 can be released alternately in segments along the side surface m3, reducing the risk of unidirectional stress concentration. Additionally, it can interrupt the conductive path at the edge, suppressing edge leakage current, while simultaneously maintaining overall mechanical strength through the connection between the second recess 11012 and the third recess 11013. During component lamination and encapsulation, the alternating second recess 11012 and the third recess 11013 also provide dispersed pressure relief channels, facilitating gas discharge and adhesive flow, and reducing the risk of encapsulation defects such as bubbles and delamination.

[0100] By configuring the second recess 11012 and the third recess 11013 to have an overlapping portion P in the second direction F2, it is not only beneficial to further reduce the area of ​​the dicing surface, but also to reduce the risk of stress concentration by utilizing the overlapping portion P, thus more fully releasing the processing stress at the side m3. In addition, by adjusting the length of the overlapping portion P, the leakage current suppression level and the mechanical strength of the substrate 110 can be flexibly adjusted, thereby balancing the photoelectric performance of the battery and the process yield.

[0101] By controlling the size of the second recess 11012 along the first direction F1, it is possible to balance reducing the cutting surface, the uniformity of the first passivation layer 120 formed on the wall of the second recess 11012, and the mechanical strength of the substrate 110.

[0102] By controlling the size of the third recess 11013 along the first direction F1, it is possible to balance reducing the cutting surface, the uniformity of the first passivation layer 120 formed on the wall of the third recess 11013, and the mechanical strength of the substrate 110.

[0103] In the case where "alternating arrangement of second recess 11012 and third recess 11013 along the second direction F2", "overlapping portion P of second recess 11012 and third recess 11013 along the second direction F2", and "size of second recess 11012 is H1, size of third recess 11013 is H2, and size of base 110 is H3 along the first direction F1; H1 / H3 is 0.5 to 0.8, and / or H2 / H3 is 0.5 to 0.8", the aforementioned advantages are present, and the manufacturing method is also more flexible and easier to manufacture.

[0104] Please continue to refer to Figure 3 and Figure 4According to some embodiments of this application, the recess 1101 has a recess size of D1 relative to the side surface m3, and the recess 1101 has a size of D2 along the second direction F2. In some embodiments, 0.3 ≤ D1 / D2 ≤ 0.8. In other embodiments, D1 is 90 μm to 250 μm. In still other embodiments, D2 is 300 μm to 500 μm.

[0105] For example, the recessed dimension D1 of the recess 1101 relative to the side m3 can be regarded as the recessed depth of the recess 1101, that is, the recessed depth of the recess 1101 along the third direction F3. The dimension D2 of the recess 1101 along the second direction F2 can be regarded as the width of the recess 1101.

[0106] For example, the ratio of D1 / D2 can be 0.3, 0.4, 0.5, 0.6, 0.7, or 0.8. The ratio of D1 / D2 can be any other value in the range of 0.3 to 0.8, without any specific limitation.

[0107] For example, with Figure 3 For example, D1 / D2=0.5.

[0108] For example, with Figure 7 For example, Figure 7 This is a partially enlarged structural schematic diagram of a solar cell in another embodiment of this application from another perspective. The size D1a of the recess 1101a is smaller than the size D2a of the recess 1101.

[0109] For example, D1 can be 90μm, 100μm, 150μm, 180μm, 190μm, 200μm, 220μm, or 250μm. D1 can also be any other value in the range of 90μm to 250μm, without any specific limitation.

[0110] For example, D2 can be 300μm, 350μm, 400μm, 420μm, 450μm, 480μm, or 500μm. D2 can also be any other value in the range of 300μm to 500μm, without any specific limitation.

[0111] By controlling 0.3≤D1 / D2≤0.8, a shallow and wide recessed structure can be formed. This not only helps to make the first passivation layer 120 on the wall of the recess 1101 more uniform and complete, but also helps to balance the mechanical strength of the substrate 110 and reduce the size of the cut surface. This can improve the reliability of the substrate 110 while reducing cutting damage, thereby improving battery performance.

[0112] By controlling the range of the size D1 of the recess 1101, D1≥90μm, it is not only beneficial to reduce the size of the cutting surface, but also to the processing and manufacturing. D1≤250μm, it is not only beneficial to reduce the amount of substrate 110 removed, but also to make the undulation at the side m3 smaller, which is beneficial to the uniformity of the electric field, suppressing the concentration of local electric field, reducing the risk of leakage, and improving the leakage suppression capability at the edge.

[0113] By controlling the range of the size D2 of the recess 1101, D2≥300μm not only helps to reduce the size of the cutting surface, but also facilitates the processing; D2≤500μm not only helps to reduce the amount of substrate 110 removed and reduce cutting stress, but also helps to reduce the fragmentation rate.

[0114] By controlling 0.3≤D1 / D2≤0.8 and the ranges of dimensions D1 and D2 of the recess 1101, not only are the aforementioned advantages achieved, but the recess 1101 can also be flexibly configured under these conditions. Therefore, the photoelectric performance of the battery, process yield, and long-term reliability of the module can be improved.

[0115] It should be noted that in some other embodiments, there may be multiple recesses 1101 including a first recess 11011, a second recess 11012 and a third recess 11013, which are not specifically limited here.

[0116] Please continue to refer to Figure 3 and Figure 4 According to some embodiments of this application, along the second direction F2, the size of the base 110 is L1, the total size of all recesses 1101 is L2, and 0.5≤L1 / L2≤0.85; and / or, along the second direction F2, the distance between two adjacent recesses 1101 is 50μm to 500μm.

[0117] For example, the dimension L1 of the base 110 can be considered as the width of the base 110, and the total dimension L2 of all recesses 1101 can be considered as the sum of the dimensions D2 of all recesses 1101. For example, L1 / L2 can be 0.5, 0.6, 0.7, 0.8, or 0.85. L1 / L2 can also be any other value in the range of 0.5 to 0.85, without specific limitation.

[0118] For example, along the second direction F2, the distance between two adjacent recesses 1101 is W. The distance W can be 50μm, 80μm, 100μm, 150μm, 200μm, 250μm, 300μm, 380μm, 400μm, 460μm, or 500μm. W can also be any other value in the range of 50μm to 500μm, without specific limitation here.

[0119] By controlling the range of L1 / L2, it is beneficial to control the size of the cutting surface, thereby enabling the substrate 110 to have a certain mechanical strength while reducing the risk of cutting damage.

[0120] Since multiple recesses 1101 are arranged at intervals along the second direction F2, and the portion between two adjacent recesses 1101 along the second direction F2 constitutes a cutting surface, a discontinuous cutting surface is formed. By controlling the distance W between two adjacent recesses 1101, that is, controlling the size of a single cutting surface, it is not only beneficial to control the cutting stress, but also beneficial to improve the mechanical reliability of the substrate 110.

[0121] By controlling the range of L1 / L2 and the distance W between two adjacent recesses 1101, not only can the advantages mentioned above be achieved, but they can also be mutually constrained, thus combining ease of manufacture, mechanical strength, passivation quality, and reduced cutting damage.

[0122] In other embodiments, W may also be a value in other ranges such as 10 μm to 40 μm, and no specific limitation is made here.

[0123] By controlling the size of the recess 1101 and the distance between adjacent recesses 1101 as illustrated in the foregoing embodiments, the cutting surface can be minimized as much as possible. With a smaller cutting surface, even if no passivation structure is formed at the cutting surface, the performance of the battery will not be significantly affected. Furthermore, in the foregoing embodiment in which a first passivation layer 120 is formed on the wall surface of the recess 1101, not only can high-quality passivation be achieved by utilizing the larger effective area of ​​the recess wall of the recess 1101, suppressing carrier recombination on the inner wall of the recess and further improving the passivation effect, but also, since the first passivation layer 120 has a discontinuous structure, the reliability of the first passivation layer 120 is also higher.

[0124] For example, in practice, a sample of the solar cell 100 can be prepared, the first passivation layer 120 can be removed, and the portion including the side surface m3 and the recess 1101 can be selected to create SEM images from both top and side views. In the corresponding SEM images, the dimensions of the recess 1101 along the second direction F2 (which can be understood with reference to dimension D2), the dimensions along the third direction F3 (which can be understood with reference to dimension D1), and the distances between adjacent recesses 1101 (which can be understood with reference to distance W) can be measured.

[0125] In some detection methods, for detecting the relevant dimensions of the aforementioned recess 1101, it is not necessary to inspect all areas of the side m3 one by one; only sampling testing is required. Those skilled in the art can reasonably infer and determine the dimensions of other areas of the side m3 based on the dimensions corresponding to the measured samples. It is understood that the design and layout of each area of ​​the side m3 follow a regular pattern. For example, in the embodiments of this application, the morphology of other side m3 can be reasonably inferred and obtained by measuring the morphology of one or more side m3 areas.

[0126] According to some embodiments of this application, the cross-sectional shape of the recess includes at least one of a polygonal shape and a curved shape. The cross-section of the recess is perpendicular to the first direction F1.

[0127] For example, the cross-sectional shape of the concave portion includes a curved shape. For instance, curved shapes include semi-elliptical shapes, semi-circular arcs, etc. Figure 3 For example, the cross-sectional shape of the recess 1101 includes a semi-circular arc; in this case, D1 = D2. Figure 7 For example, the cross-sectional shape of the recess 1101a includes a semi-ellipse. In this case, D1a < D2a, which is beneficial to control the distance Wa to be smaller.

[0128] For example, the cross-sectional shape of the concave portion includes a polygonal shape. For instance, polygonal shapes include V-shaped polygons, Z-shaped polygons, etc. Figure 8 For example, Figure 8 This is a partially enlarged structural schematic diagram of a solar cell in some embodiments of this application from another perspective. The cross-sectional shape of the recess 1101b includes a V-shaped broken line. In this case, D1b < D2b, which is beneficial to control the distance Wb to be smaller.

[0129] It should be noted that the cross-sectional shape of the concave portion in different regions can be the same or different, and no specific restrictions are imposed here.

[0130] By controlling the cross-sectional shape of the recess, the morphology of the recess wall and the size of the cut surface can be controlled, thereby improving battery performance and reliability. Furthermore, simultaneously controlling the cross-sectional shape of the recess also helps control the dimensions of the recess along the second direction F2 and the third direction F3, further improving passivation quality and reducing cutting damage.

[0131] Please refer to Figure 9 and Figure 10 , Figure 9 This is a cross-sectional view of the solar cell 100a in some other embodiments of this application from one perspective. Figure 10 for Figure 9The diagram shows a partially enlarged view of the solar cell 100a from another perspective. The solar cell 100a also includes a second passivation layer 130. The second passivation layer 130 is disposed on the side m3 and the first passivation layer 120 is disposed on the side opposite to the substrate 110.

[0132] The fabrication method and possible implementation methods of the second passivation layer 130 can be understood with reference to the first passivation layer 120, and no specific limitations are made here.

[0133] The second passivation layer 130 can further passivate the side m3 and the side of the first passivation layer 120 that are away from the substrate 110, reduce the interface state density, reduce minority carrier recombination, thereby improving the carrier transport efficiency at the interface and improving the efficiency of the solar cell 100. The second passivation layer 130 can also reduce or eliminate reflected light on the surface of the solar cell 100 and increase light transmittance, further improving the photoelectric conversion efficiency of the solar cell 100.

[0134] Please continue to refer to Figure 9 According to some embodiments of this application, the materials of the first passivation layer 120 and the second passivation layer 130 are different.

[0135] For example, the material of the first passivation layer 120 includes at least one of silicon nitride, silicon oxynitride, silicon oxide, and aluminum oxide. For instance, the material of the first passivation layer 120 includes silicon nitride.

[0136] For example, the first passivation layer 120 is made of aluminum oxide and silicon nitride, and the second passivation layer 130 is made of aluminum oxide and silicon oxide.

[0137] When the materials of the first passivation layer 120 and the second passivation layer 130 are different, the first passivation layer 120 can be formed on the wall surface of the recess 1101 simultaneously with the first surface m1 and / or the second surface m2 of the substrate 110. This not only eliminates the need for additional processes and simplifies the manufacturing process, but also improves the overall integrity of the first passivation layer 120, enhances the adhesion of the first passivation layer 120 at the wall surface of the recess 1101, and reduces the risk of film peeling. The second passivation layer 130 is mainly used to passivate the cut surface to reduce cutting damage, and can further work with the first passivation layer 120 to improve the passivation quality at the wall surface of the recess 1101.

[0138] Please continue to refer to Figure 1 and Figure 9In some embodiments, the first surface m1 includes alternating first regions z1 and second regions z2, and the side surface m3 is connected to the second region z2 located at the edge of the first surface m1. The solar cell 100 also includes a doped region 140 disposed in the first region z1. A first passivation layer 120 is also disposed on the side of the doped region 140 opposite to the second surface m2 and on the second region z2.

[0139] For example, the first region z1 and the second region z2 are arranged alternately along the third direction F3. That is, along the third direction F3, an arrangement of "first region z1, second region z2, first region z1, second region z2, first region z1..." or an arrangement of "second region z2, first region z1, second region z2, first region z1..." is formed. In other words, along the arrangement direction of the first region z1 and the second region z2, the region adjacent to the first region z1 is the second region z2, not another first region z1; the region adjacent to the second region z2 is the first region z1, not another second region z2. It can be understood that along the arrangement direction of the first region z1 and the second region z2 (that is, the third direction F3), the first region can be either the first region z1 or the second region z2, and the last region can be either the first region z1 or the second region z2, without specific restrictions. For example, with Figure 1 For example, only two first regions z1 and three second regions z2 are shown, without limiting the number of both first regions z1 and second regions z2.

[0140] It should be noted that the first region z1 and the second region z2 described above are artificial divisions of the first surface m1 for the purpose of describing the technical solutions of the embodiments of this application. This division does not mean that the first region z1 and the second region z2 are physically separated or independent. Furthermore, there is not necessarily a clear boundary between the aforementioned regions. For example, there is no clear boundary between the first region z1 and the second region z2.

[0141] A doped region 140 is disposed in the first region z1. Along the thickness direction of the substrate 110, the doped region 140 is formed above or inside the first surface m1 of the substrate 110. Exemplarily, the doping type of the doped region 140 and the doping type of the substrate 110 can be the same or different. For example, the doping type of the doped region 140 and the doping type of the substrate 110 can be different, so that they can together form a PN junction structure. For example, when the substrate 110 is an N-type silicon substrate, the doped region 140 can be a P-type emitter. As another example, when the substrate 110 is a P-type silicon substrate, the doped region 140 can be an N-type emitter.

[0142] For example, the doped region 140 can be formed by diffusing a dopant element into the substrate 110 on the first surface m1 side of the substrate 110. When the substrate 110 is an N-type substrate 110, a P-type doped region 140 can be formed by boron diffusion into the substrate 110.

[0143] For example, the doped region 140 may also be made of doped polycrystalline silicon, microcrystalline silicon or amorphous silicon with a doping element type opposite to that of the substrate 110. For example, when the substrate 110 is an N-type substrate 110, a tunneling layer and a polycrystalline silicon, microcrystalline silicon or amorphous silicon layer can be formed on the first surface m1 of the substrate 110 by means of low pressure chemical vapor deposition (LPCVD) or plasma enhanced chemical vapor deposition, and the doped region 140 is formed by doping the polycrystalline silicon, microcrystalline silicon or amorphous silicon layer with a P-type doping element. At this time, the doped region 140 can be regarded as a layer structure.

[0144] The first passivation layer 120 is also disposed on the side of the doped region 140 opposite to the second surface m2 and on the second region z2. That is, the first passivation layer 120 can also effectively passivate the side of the doped region 140 opposite to the second surface m2 at the first surface m1 and the second region z2 of the first surface m1, reducing the interface state density and reducing minority carrier recombination, thereby improving the carrier transport efficiency at the interface and improving the efficiency of the solar cell 100. The first passivation layer 120 can also reduce or eliminate reflected light on the surface of the solar cell 100 and increase light transmittance, further improving the photoelectric conversion efficiency of the solar cell 100.

[0145] Since the doped region 140 is located in the first region z1 and the second region z2 does not have a doped region 140, the damage to the doped region 140 at the first surface m1 can be reduced during the cutting process to form the solar cell 100. This is beneficial to further reduce the damage to the solar cell 100 during the slab cutting process and improve the performance of the solar cell 100.

[0146] It should be noted that, in conjunction with reference Figure 9 In the case where a second passivation layer 130 is provided, the second passivation layer 130 is also provided on the side of the first passivation layer 120 located on the second region z2 that is away from the substrate 110.

[0147] Please refer to Figure 11 , Figure 11This is a partial structural diagram of the side surface m3 of the base 110b in some embodiments of this application. According to some embodiments of this application, the base 110 includes a central region mz and two edge regions bz, with the two edge regions bz located on either side of the central region mz along a first direction F1. A first pyramidal structure J1 located on the central region mz and a second pyramidal structure J2 located on the edge regions bz are also provided on the wall surface of the recess 1101c. In some embodiments, the height of the first pyramidal structure J1 is less than or equal to the height of the second pyramidal structure J2. In other embodiments, the one-dimensional dimension of the bottom of the first pyramidal structure J1 is less than or equal to the one-dimensional dimension of the bottom of the second pyramidal structure J2.

[0148] For example, the height of the first pyramid-shaped structure J1 is 0.5 μm to 1.5 μm.

[0149] For example, the height of the second pyramidal structure J2 is 0.7 μm to 1.8 μm.

[0150] For example, the one-dimensional dimension of the bottom of the first pyramid-shaped structure J1 is 2 μm to 5 μm.

[0151] For example, the one-dimensional dimension of the bottom of the second pyramidal structure J2 is 2.5 μm to 6 μm.

[0152] By lowering the height of the first pyramid-shaped structure J1 at the middle region mz and / or setting its one-dimensional size to be smaller, a sufficiently large specific surface area can be obtained, improving the passivation effect of the main region at the recess 1101c. This not only improves the passivation quality of the weak corner at the junction of the recess 1101c and the cutting surface, but also fully utilizes the passivation at the recess 1101c to reduce the performance loss caused by cutting, thereby improving the photoelectric conversion performance of the battery, the mechanical reliability of the substrate 110, and the long-term stability of the module.

[0153] By increasing the height and / or increasing the one-dimensional size of the second pyramidal structure J2 at the edge region bz, the passivation precursor can diffuse into the recess 1101, compensating for insufficient gas supply at the connection between side m3 and the first surface m1 or between side m3 and the second surface m2, thus improving the continuity of the first passivation layer 120 at the connection. Furthermore, the larger pyramidal structure at the edge region bz can also reduce the number of grain boundary defects and simultaneously fix the first passivation layer 120, thereby improving the adhesion of the passivation film.

[0154] It should be noted that, in conjunction with reference Figure 12 , Figure 12This is a three-dimensional structural diagram of a pyramid-shaped structure in some embodiments of this application. In the embodiments of this application, the height S1 of the pyramid-shaped structure J refers to the vertical distance from the base surface where the bottom of the pyramid-shaped structure J is located to the apex of the pyramid-shaped structure J. The one-dimensional dimension S2 of the bottom of the pyramid-shaped structure J refers to the length, width, diagonal length, and other dimensions of the base, which are not specifically limited here. Figure 12 The one-dimensional dimension S2 shown in the figure is the side length of one side of the base of the pyramid-shaped structure J.

[0155] In some methods, the height S1 and one-dimensional dimension S2 of the pyramid-shaped structure J can be measured using a testing instrument. The testing instrument can be an optical microscope (OM), an atomic force microscope (AFM), a scanning electron microscope (SEM), a transmission electron microscope (TEM), etc., without specific limitations.

[0156] For example, in practice, a cross-sectional sample of the solar cell can be prepared, selecting the portion containing the pyramidal structure and creating a corresponding SEM image. For instance, firstly, the solar cell under test is cut along the third direction F3; secondly, a sample containing the pyramidal structure is obtained; subsequently, a microscopic image of the cross-sectional morphology with the pyramidal structure is obtained using a scanning electron microscope or similar tool; then, in this microscopic image, the height of the pyramidal structure is measured using image analysis software, with the base of the pyramidal structure as the lower boundary and the apex as the upper boundary; and the one-dimensional dimensions of the pyramidal structure are measured using image analysis software, with the lateral boundary of the base as the boundary. Alternatively, the film layer on the solar cell under test can be removed first, and then a sample containing the pyramidal structure can be obtained. A microscopic image of the morphology of the sample with the pyramidal structure from a top-down view along the third direction F3 can then be obtained using a scanning electron microscope or similar tool. The length, width, and diagonal length of the base of the pyramidal structure can then be measured using image analysis software, thereby obtaining the one-dimensional dimensions of the pyramidal structure.

[0157] Please continue to refer to Figure 1 and Figure 9According to some embodiments of this application, the second surface m2 may also be divided into two alternating regions, similar to the first surface m1. One region is provided with a doped region 140, while the other region is not provided with a doped region 140. The doped region 140 located on the first surface m1 is defined as the first doped region 140a, and the doped region 140 located on the second surface m2 is defined as the second doped region 140b. The doping type of the first doped region 140a is different from that of the second doped region 140b. The doping element of the first doped region 140a is a first doped element, and the doping element of the second doped region 140b is a second doped element. For example, the first doped element is an N-type doped element, and the second doped element is a P-type doped element. Another example is that the first doped element is a P-type doped element, and the second doped element is an N-type doped element. No specific limitations are imposed here.

[0158] The implementation methods and advantages of the various regions on the second surface m2 side, the second doped region 140b, the first passivation layer 120, and the second passivation layer 130 can be understood by referring to the first surface m1 side, and will not be repeated here. It is understood that if the second surface m2 side also adopts the same implementation method as the first surface m1 side, the passivation performance can be further improved, the risk of edge leakage current can be further reduced, and the cutting damage can be further reduced, thereby contributing to further improvement of the performance of the solar cell 100. The doped region 140 illustrated in some of the foregoing embodiments is relative to the first surface m1 side; that is, the doped region 140 illustrated in some of the foregoing embodiments can be regarded as the first doped region 140a.

[0159] It should be noted that the first doped region 140a does not necessarily correspond to the second doped region 140b along the first direction F1. For example, in Figure 1 and Figure 9 The diagram illustrates the arrangement of the first doped region 140a and the second doped region 140b opposite to each other along the first direction F1. Please refer to some embodiments of this application for further details. Figure 1 and Figure 9 The second doped region 140b includes a tunneling layer 141 disposed on the second surface m2 and a doped semiconductor layer 142 disposed on the side of the tunneling layer 141 opposite to the substrate 110.

[0160] The tunneling layer 141 serves to passivate the interface of the corresponding region on the second surface m2 of the substrate 110, reduce the interface state density, and decrease carrier recombination, thus achieving a chemical passivation effect. Specifically, by saturating the dangling bonds in the corresponding region on the second surface m2 of the substrate 110, the interface defect state density in the corresponding region on the second surface m2 of the substrate 110 is reduced, thereby reducing the recombination centers in the corresponding region on the second surface m2 of the substrate 110 and lowering the carrier recombination rate. The tunneling layer 141 can be a dielectric material layer. For example, the material of the tunneling layer 141 can be at least one of silicon oxide, magnesium fluoride, silicon oxide, amorphous silicon, polycrystalline silicon, silicon carbide, silicon nitride, silicon oxynitride, aluminum oxide, or titanium oxide. In this embodiment, the tunneling layer 141 can be formed using low-pressure chemical vapor deposition (LPCVD). Of course, other processes such as thermal oxidation, plasma oxidation, or nitric acid oxidation can also be used to fabricate the tunneling layer 141; no specific limitations are imposed here.

[0161] The dopant element of the doped semiconductor layer 142 can be adapted to the conductivity type of the dopant element of the substrate 110. For example, if the substrate 110 is an N-type substrate, the dopant element of the substrate 110 can be phosphorus and / or antimony. The dopant element of the doped semiconductor layer 142 is phosphorus. As another example, if the substrate 110 is a P-type substrate, the dopant element of the doped semiconductor layer 142 is boron. In the embodiments of this application, the dopant element of the doped semiconductor layer 142 is formed by doping amorphous silicon, microcrystalline silicon, polycrystalline silicon, etc., with an N-type dopant element. Exemplarily, the dopant element of the doped semiconductor layer 142 is a phosphorus-doped polycrystalline silicon layer. In this case, the stacked tunneling layer 141 and the doped semiconductor layer 142 together form a passivation contact structure, which provides good surface passivation for the corresponding region of the second surface m2 of the substrate 110.

[0162] Please continue to refer to Figure 1 and Figure 9 According to some embodiments of this application, the solar cell 100 further includes a first electrode 150, and the solar cell 100a further includes a first electrode 150. The first electrode 150 is disposed on the side of the first doped region 140a opposite to the second surface m2, and is electrically connected to the first doped region 140a.

[0163] The first electrode 150 is used to collect and summarize the current of the solar cell. The first electrode 150 and the first doped region 140a can be in contact directly or indirectly to form an electrical connection. Exemplarily, the first electrode 150 can be prepared by screen printing and sintering. Exemplarily, the material of the metal paste used to make the first electrode 150 can be one or more of aluminum, silver, gold, nickel, molybdenum or copper, without specific limitation.

[0164] The electrical connection between the first electrode 150 and the first doped region 140a means that, since both the materials of the first electrode 150 and the first doped region 140a are conductive materials, the first electrode 150 and the first doped region 140a form a physical channel for the flow of photogenerated charge carriers through direct or indirect physical contact. When the solar cell 100 is not in a power generation or power supply state, the photogenerated charge carriers are not effectively separated and driven to flow, and the photogenerated charge carriers do not flow through this physical channel. When the first doped region 140a is in a power generation or power supply state, the first doped region 140a generates photogenerated charge carriers, which are separated under the action of its built-in electric field, and the photogenerated charge carriers flow out through this physical channel.

[0165] Please continue to refer to Figure 1 and Figure 9 According to some embodiments of this application, the solar cell 100 further includes a second electrode 160, and the solar cell 100a also includes a second electrode 160. The second electrode 160 is disposed on the side of the second doped region 140b opposite to the first surface m1, and is electrically connected to the second doped region 140b. When the second doped region 140b includes a tunneling layer 141 and a doped semiconductor layer 142, the second electrode 160 is electrically linked to the doped semiconductor layer 142. The understanding and implementation of the second electrode 160 can be referred to the first electrode 150, and will not be repeated here.

[0166] It should be noted that the first doped region 140a can adopt either a tunneling passivation structure or a diffusion structure; no specific limitation is made here. For example, one of the first doped region 140a and the second doped region 140b can be a diffusion region, and the other can be a tunneling passivation contact structure. As another example, one of the first doped region 140a and the second doped region 140b can be a first tunneling passivation contact structure, and the other can be a second tunneling passivation contact structure. Figure 1 and Figure 9 For example, the first doped region 140a is shown to be a diffusion region, and the second doped region 140b is a tunneling passivation contact structure.

[0167] Please refer to Figure 13 , Figure 13 This is a flowchart illustrating the fabrication method of a solar cell according to some embodiments of this application. According to some embodiments of this application, this application provides a method for fabricating a solar cell, used to fabricate the solar cell in any of the above embodiments. The method for fabricating a solar cell includes:

[0168] Step S110: Provide a first intermediate for a solar cell, the first intermediate for a solar cell including a substrate;

[0169] Step S120: Perform a first laser treatment on the first intermediate of the solar cell to form a multiple hole structure, thereby obtaining the second intermediate of the solar cell;

[0170] Step S130: A first passivation layer is formed on the wall surface of the multiple pore structures of the second intermediate of the solar cell to obtain the third intermediate of the solar cell;

[0171] Step S140: Based on the multiple hole structure, the third intermediate of the solar cell is laser-cut to form a solar cell.

[0172] In step S120, the hole structure can be a blind hole or a through hole. A through hole can be used to form a first recess, and a blind hole can be used to form a second or third recess.

[0173] Combined with reference Figure 14 and Figure 15 , Figure 14 This is a schematic diagram of the structure of the first intermediate 101a of the solar cell in some embodiments of this application. Figure 15 This is a schematic diagram of the structure of the first intermediate body 101b of the solar cell in some other embodiments of this application. Two solar cells can be formed by the first intermediate body 101b of the solar cell, or three solar cells can be formed by the first intermediate body 101b of the solar cell; no specific limitation is made here.

[0174] Continue to refer to Figure 14 and in conjunction with reference Figure 16 and Figure 17 , Figure 16 This is a schematic diagram of the structure of the second intermediate 102a of the solar cell in some embodiments of this application from one viewpoint. Figure 17 This is a schematic diagram of the structure of the second intermediate body 102a of the solar cell in some embodiments of this application from another perspective. Taking the hole structure ka as an example, the second intermediate body 102a of the solar cell is provided with a row of hole structures ka.

[0175] Continue to refer to Figure 15 and in conjunction with reference Figure 18 and Figure 19 , Figure 18 This is a schematic diagram of the structure of the second intermediate 102b of the solar cell in other embodiments of this application from one viewpoint. Figure 19 This is a schematic diagram of the structure of the second intermediate body 102b of the solar cell in other embodiments of this application from another perspective. Taking the hole structure ka as an example where it is a through hole, the second intermediate body 102b of the solar cell has two rows of hole structures kb.

[0176] In step S130, in conjunction with reference Figures 20 to 22 , Figure 20This is a schematic diagram of the structure of the third intermediate 103 of the solar cell in some embodiments of this application from one view. Figure 21 This is a schematic diagram of the structure of the third intermediate 103 of the solar cell in some embodiments of this application from another perspective. Figure 22 for Figure 21 A partially enlarged structural diagram at point G2. While forming the first passivation layer 1031 on the wall surface of the multiple pore structures ka of the second intermediate body 102a of the solar cell, the first passivation layer 1031 can also be formed on other surfaces of the second intermediate body 102a of the solar cell to form the third intermediate body 103 of the solar cell.

[0177] In step S140, for Figure 20 and Figure 21 The third intermediate 103 of the solar cell shown in the diagram is cut along the cutting line R to obtain... Figure 23 and Figure 24 The solar cell 104 is shown in the diagram. The cutting line R can be the line connecting the centers of the aperture structure ka. It is understood that the cutting line R is only for illustrating the cutting path and does not imply any limitation on the structure. (Referring to...) Figure 23 and Figure 24 , Figure 23 This is a schematic diagram of the structure of the solar cell 104 in some embodiments of this application from one viewpoint. Figure 24 This is a schematic diagram of the structure of the side surface of the solar cell 104 in some embodiments of this application. Figure 24 In the middle, the surface between two adjacent recesses 1041 is the cutting surface q, and the surface between the first recess 1041 and the last recess 1041 on the second direction F2 is the cutting surface q.

[0178] Based on the situations illustrated above, through Figure 14 , Figure 16 , Figure 17 , Figures 20 to 24 The illustrated situation can form, for example Figure 1 The solar cell 100 is shown. After step S140, referring to... Figure 25 , Figure 25 This is a schematic diagram of the structure of the solar cell 104 in some other embodiments of this application. A second passivation layer 1042 may be formed, thereby forming, for example... Figure 9 The solar cell 100 is shown in the diagram.

[0179] Therefore, by forming a hole structure through the first laser treatment, the area of ​​the cut surface formed during subsequent cutting is reduced compared to a structure without a hole structure, thus helping to reduce cutting damage. Furthermore, due to the reduced area of ​​the cut surface, the laser power used during laser cutting can be reduced, further minimizing cutting damage.

[0180] In the case of localized doping regions in the solar cells of this application embodiment, the formation of hole structures based on the areas without doped regions for cutting can further reduce damage during the slab cutting process.

[0181] Therefore, in addition to the advantages illustrated in some of the aforementioned embodiments, the solar cells prepared by the above-described method also have the advantages of reducing cutting damage, further reducing the risk of edge recombination, leakage, and edge microcracks, thereby further improving the electrical performance and structural reliability of the solar cells.

[0182] According to some embodiments of this application, the laser used in the first laser processing is defined as the first laser, and the laser used in the laser cutting processing is defined as the second laser. In some embodiments, the power P1 of the first laser and the power P2 of the second laser satisfy: 1 ​​≤ P1 / P2 ≤ 1.5. In other embodiments, the spot area A1 of the first laser and the spot area A2 of the second laser satisfy: 90 ≤ A1 / A2 ≤ 250.

[0183] For example, the ratio of P1 / P2 can be 1, 1.1, 1.2, 1.3, 1.4, or 1.5. The ratio of P1 / P2 can be any other value in the range of 1 to 1.5, without any specific limitation.

[0184] For example, P1 is 200W to 800W and P2 is 200W to 600W.

[0185] For example, P1 can be 200W, 250W, 300W, 400W, 500W, 600W, 700W, or 800W. P1 can be any other value within the range of 200W to 800W, without specific restrictions.

[0186] For example, P2 can be 200W, 250W, 300W, 400W, 500W, or 600W. P2 can be any other value within the range of 200W to 600W, without specific restrictions.

[0187] For example, the ratio of A1 / A2 can be 90, 100, 120, 150, 180, 200, 220, 230, or 250. The ratio of A1 / A2 can be any other value in the range of 90 to 250, without any specific limitation.

[0188] For example, A1 is 0.09 mm. 2 Up to 0.25mm 2 A2 is 0.0001mm 2 Up to 0.001mm 2 .

[0189] For example, A1 can be 0.09 mm. 2 0.1mm 2 0.12mm 2 0.18mm 2 0.2mm 2 0.22mm 2 or 0.25mm 2 A1 can be 0.09mm. 2 up to 0.25mm 2 Any other value within the range is not specifically restricted here.

[0190] For example, A2 can be 0.0001 mm. 2 0.0002mm 2 0.0003mm 2 0.0005mm 2 0.0009mm 2 or 0.001mm 2 A2 can be 0.0001mm. 2 Up to 0.001mm 2 Any other value within the range is not specifically restricted here.

[0191] By controlling the power ratio of the first laser and the second laser, it is beneficial to control the damage caused by the laser. By controlling the ratio of the spot area of ​​the first laser to the spot area of ​​the second laser, it is beneficial to control different laser action areas, thereby controlling the damage caused by the laser.

[0192] According to some embodiments of this application, the laser parameters of the second laser satisfy at least one of the following: the laser is a green picosecond laser; the picosecond pulse width is 5 ps to 15 ps; the laser power is 200 W to 600 W; the laser frequency is 1 MHz to 2000 MHz; the cutting speed is 500 mm / s to 1000 mm / s; and the laser spot area is 0.0001 mm². 2 Up to 0.001mm 2 .

[0193] For example, the laser is a green picosecond laser with a wavelength of 532 nm.

[0194] For example, the picosecond pulse width of the second laser is 5 ps, 6 ps, 8 ps, 9 ps, 11 ps, 13 ps, 14 ps, or 15 ps. The picosecond pulse width of the second laser can be any other value within the range of 5 ps to 15 ps, and no specific limitation is made here.

[0195] For example, the laser frequency of the second laser is 1MHz, 20MHz, 100MHz, 200MHz, 300MHz, 400MHz, 500MHz, 700MHz, 1000MHz, 1500MHz, 1700MHz, 1900MHz, or 2000MHz. The laser frequency of the second laser can be any other value in the range of 1MHz to 2000MHz, and no specific limitation is made here.

[0196] For example, the cutting speed of the second laser is 500 mm / s, 600 mm / s, 700 mm / s, 800 mm / s, 900 mm / s, 950 mm / s, or 1000 mm / s. The cutting speed of the second laser can be any other value in the range of 500 mm / s to 1000 mm / s, and no specific limitation is made here.

[0197] For example, the laser power of the second laser is 200W, 250W, 300W, 400W, 500W, or 600W. The laser power of the second laser can be any other value within the range of 200W to 600W, and no specific limitation is made here.

[0198] For example, the laser spot area of ​​the second laser is 0.0001 mm. 2 Up to 0.001mm 2 The laser spot area of ​​the second laser can be 0.0001 mm. 2 0.0002mm 2 0.0003mm 2 0.0005mm 2 0.0009mm 2 or 0.001mm 2 The laser spot area of ​​the second laser can be 0.0001 mm. 2 Up to 0.001mm 2 Any other value within the range is not specifically restricted here.

[0199] According to some embodiments of this application, the laser parameters of the first laser satisfy at least one of the following: the laser is a green picosecond laser; the picosecond pulse width is 5 ps to 15 ps; the laser power is 200 W to 800 W; the laser frequency is 1 MHz to 2000 MHz; the cutting speed is 500 mm / s to 1000 mm / s; and the laser spot area is 0.09 mm². 2 up to 0.25mm 2 .

[0200] For example, the laser is a green picosecond laser with a wavelength of 532 nm.

[0201] For example, the picosecond pulse width of the first laser is 5 ps, 6 ps, 8 ps, 9 ps, 11 ps, 13 ps, 14 ps, or 15 ps. The picosecond pulse width of the first laser can be any other value within the range of 5 ps to 15 ps, and no specific limitation is made here.

[0202] For example, the laser frequency of the first laser is 1MHz, 20MHz, 100MHz, 200MHz, 300MHz, 400MHz, 500MHz, 700MHz, 1000MHz, 1500MHz, 1700MHz, 1900MHz, or 2000MHz. The laser frequency of the first laser can be any other value in the range of 1MHz to 2000MHz, and no specific limitation is made here.

[0203] For example, the cutting speed of the first laser is 500 mm / s, 600 mm / s, 700 mm / s, 800 mm / s, 900 mm / s, 950 mm / s, or 1000 mm / s. The cutting speed of the first laser can be any other value within the range of 500 mm / s to 1000 mm / s, and no specific limitation is made herein.

[0204] For example, the laser power of the first laser is 200W, 250W, 300W, 400W, 500W, 600W, 700W, or 800W. The laser power of the first laser can be any other value within the range of 200W to 800W, and no specific limitation is made here.

[0205] For example, the laser spot area of ​​the first laser is 0.09 mm. 2 0.1mm 2 0.12mm 2 0.18mm 2 0.2mm 2 0.22mm 2 or 0.25mm 2 The laser spot area of ​​the first laser can be 0.09 mm. 2 up to 0.25mm 2Any other value within the range is not specifically restricted here.

[0206] By controlling the parameters corresponding to each laser, the structural stability of the corresponding layer structure can be improved while reducing damage, thereby enhancing the performance of solar cells.

[0207] It should be noted that the lasers used above can also be ultraviolet picosecond lasers, pulsed red nanosecond lasers, etc., and no specific restrictions are made here.

[0208] According to some embodiments of this application, this application provides a tandem solar cell, including a bottom cell and a top cell stacked on the bottom cell; wherein the bottom cell includes the solar cell in any of the above embodiments; or, the bottom cell includes a solar cell manufactured by the method of manufacturing the solar cell in any of the above embodiments.

[0209] For example, the top cell can be one of a perovskite cell, a cadmium telluride solar cell, a copper indium gallium selenide solar cell, or a gallium arsenide solar cell.

[0210] For example, the stacked battery also includes a connecting layer that connects the bottom battery and the top battery.

[0211] For the selection of the interconnect layer, a transparent material with a high refractive index is typically chosen. The interconnect layer needs to have high light transmittance to reduce light reflection and absorption at the interconnect layer interface, and good conductivity to reduce the impact of series resistance on device performance. For example, transparent conductive metal oxide thin films (ITO) can be used as interconnect layers, and no specific limitation is made here.

[0212] The advantages of solar cells and solar cell manufacturing methods described above are also present in tandem solar cells, and will not be elaborated upon here.

[0213] According to some embodiments of this application, please refer to Figure 26 , Figure 26 This is a schematic diagram of the structure of a photovoltaic module 10 in some embodiments of this application. The embodiments of this application provide a photovoltaic module 10, including a solar cell in any of the above embodiments; or a solar cell manufactured by the method of manufacturing a solar cell in any of the above embodiments; or a tandem cell in any of the above embodiments.

[0214] Furthermore, the solar cells can be electrically connected in the form of multiple segments to form multiple cell strings 11, and the multiple cell strings 11 are electrically connected in series and / or parallel.

[0215] In some embodiments, the photovoltaic module 10 further includes an encapsulation layer 12 and a cover plate 13, wherein the encapsulation layer 12 is used to cover the surface of the battery string 11, and the cover plate 13 is used to cover the surface of the encapsulation layer 12 away from the battery string 11.

[0216] In some embodiments, multiple cell strings 11 can be electrically connected via conductive strips 14. An encapsulation layer 12 covers both the front and back sides of the solar cell.

[0217] In some embodiments, the encapsulation layer 12 may be an organic encapsulation film such as ethylene-vinyl acetate copolymer (EVA) film, polyethylene octene coelastomer (POE) film, or polyethylene terephthalate (PET) film.

[0218] In some embodiments, the cover plate 13 can be a glass cover plate, a plastic cover plate, or other cover plate with light transmission function.

[0219] In some embodiments, the surface of the cover plate 13 facing the encapsulation layer 12 can be an uneven surface, thereby increasing the utilization rate of incident light.

[0220] The photovoltaic module 10 also possesses the advantages of the solar cells, the methods for manufacturing solar cells, and the tandem cells described above, and will not be repeated here. The technical features of the embodiments described above can be combined arbitrarily. For the sake of brevity, not all possible combinations of the technical features in the above embodiments have been described. However, as long as the combination of these technical features does not contradict each other, it should be considered within the scope of this specification.

[0221] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A solar cell, characterized in that, include: The substrate has a first surface and a second surface disposed opposite to each other along a first direction, and a side surface connecting the first surface and the second surface; The side surface is provided with a plurality of recesses spaced apart along a second direction, wherein the first direction and the second direction intersect. and A first passivation layer is disposed on the wall surface of the recess.

2. The solar cell according to claim 1, characterized in that, The recess has a first end and a second end disposed opposite to each other along the first direction; Wherein, at least one of the first ends of the recess is located on the first surface; and / or, at least one of the second ends of the recess is located on the second surface.

3. The solar cell according to claim 2, characterized in that, The plurality of recesses includes a first recess; The first end of the first recess is located on the first surface, and the second end of the first recess is located on the second surface.

4. The solar cell according to claim 2, characterized in that, The plurality of recesses includes a second recess and a third recess; The first end of the second recess is located on the first surface, and the second end of the second recess is spaced apart from the second surface; the first end of the third recess is spaced apart from the first surface, and the second end of the third recess is located on the second surface; Wherein, along the second direction, the second recess and the third recess are alternately arranged; and / or Along the second direction, the second recess and the third recess have overlapping portions; and / or Along the first direction, the size of the second recess is H1, the size of the third recess is H2, and the size of the base is H3; H1 / H3 is 0.5 to 0.8, and / or H2 / H3 is 0.5 to 0.

8.

5. The solar cell according to any one of claims 1-4, characterized in that, The recessed dimension of the recess relative to the side surface is D1, and the dimension of the recess along the second direction is D2; Wherein, 0.3≤D1 / D2≤0.8; and / or, D1 is 90μm to 250μm; and / or, D2 is 300μm to 500μm.

6. The solar cell according to any one of claims 1-4, characterized in that, Along the second direction, the dimension of the base is L1, the total dimension of all the recesses is L2, 0.5 ≤ L1 / L2 ≤ 0.85; and / or Along the second direction, the distance between two adjacent recesses is 50 μm to 500 μm.

7. The solar cell according to any one of claims 1-4, characterized in that, The cross-sectional shape of the recess includes at least one of a polygonal shape and a curved shape; The cross-section of the recess is perpendicular to the first direction.

8. The solar cell according to any one of claims 1-4, characterized in that, The solar cell also includes a second passivation layer; The second passivation layer is disposed on the side and the first passivation layer is disposed on the side opposite to the substrate.

9. The solar cell according to claim 8, characterized in that, The materials of the first passivation layer and the second passivation layer are different.

10. The solar cell according to any one of claims 1-4, characterized in that, The first surface includes alternating first and second regions, and the side surface is connected to the second region located at the edge of the first surface; The solar cell further includes a doped region, which is located in the first region; The first passivation layer is also disposed on the side of the doped region opposite to the second surface and on the second region.

11. The solar cell according to any one of claims 1-4, characterized in that, The base includes a central region and two edge regions, with the two edge regions located on either side of the central region along the first direction; the wall of the recess is also provided with a first pyramid-shaped structure located on the central region and a second pyramid-shaped structure located on the edge regions; Wherein, the height of the first pyramid-shaped structure is less than or equal to the height of the second pyramid-shaped structure; and / or The one-dimensional dimension of the bottom of the first pyramid-shaped structure is less than or equal to the one-dimensional dimension of the bottom of the second pyramid-shaped structure.

12. A method for manufacturing a solar cell, characterized in that, A method for manufacturing a solar cell as described in any one of claims 1-11, comprising: A first intermediate for a solar cell is provided, the first intermediate for a solar cell comprising a substrate; The first intermediate of the solar cell is subjected to a first laser treatment to form a multiple hole structure, thereby obtaining the second intermediate of the solar cell; A first passivation layer is formed on the wall surface of the plurality of pore structures in the second intermediate of the solar cell to obtain the third intermediate of the solar cell. Based on the aforementioned multiple hole structures, the third intermediate of the solar cell is laser-cut to form the solar cell.

13. The method for manufacturing a solar cell according to claim 12, characterized in that, The laser used in the first laser processing is defined as the first laser, and the laser used in the laser cutting process is defined as the second laser. Wherein, the power P1 of the first laser and the power P2 of the second laser satisfy: 1 ​​≤ P1 / P2 ≤ 1.5; and / or The spot area A1 of the first laser and the spot area A2 of the second laser satisfy: 90≤A1 / A2≤250.

14. A stacked battery, characterized in that, It includes a first battery and a second battery stacked on the first battery; Wherein, the first battery comprises a solar cell as described in any one of claims 1-11; or The first battery includes a solar cell manufactured by the method of manufacturing a solar cell as described in claim 12 or 13.

15. A photovoltaic module, characterized in that, include: The solar cell as described in any one of claims 1-11; or A solar cell manufactured by the method of manufacturing a solar cell as described in claim 12 or 13; or The stacked battery as described in claim 14.

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