A 4H-SiC nanowire array-based dual-mode detector and a preparation method thereof

Abstract

The application discloses a kind of based on 4H Dual-mode detector of SiC nanowire array and preparation method thereof.The dual-mode detector described in the application is provided with ITO transparent conductive glass substrate, and PEDOT hole transport layer, 4H-SiC nanowire array, black phosphorus film and silver electrode are sequentially arranged on the ITO transparent conductive glass substrate. 4H The preparation method of the dual-mode detector includes: using electrochemical etching method to prepare 4H-SiC nanowire array, preparing black phosphorus film by vacuum filtration, and then sequentially assembling PEDOT hole transport layer, 4H-SiC nanowire array and black phosphorus film through hot pressing process, followed by vacuum annealing treatment, and finally evaporating silver electrode. 4H The dual-mode detector described in the application is in ultraviolet light detection mode without optical shielding; in the optical shielding environment, it automatically switches to the detection electromagnetic pulse mode, realizing the adaptive switching in the two working modes of solar blind ultraviolet light and transient electromagnetic pulse.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor optoelectronic devices and electromagnetic sensing technology, and relates to a method based on 4H Dual-mode detector of SiC nanowire array and its fabrication method. Background Technology

[0002] With the rapid development of smart grids and high-voltage power equipment, online monitoring of early faults such as partial discharge, arc discharge, and insulation aging has become a key technical means to ensure the safe operation of power systems. The arc discharge process simultaneously generates solar-blind ultraviolet radiation and broadband transient electromagnetic pulses. Real-time joint detection of these two types of signals helps improve the accuracy and reliability of fault detection.

[0003] Currently, solar-blind ultraviolet detectors are mostly based on wide-bandgap semiconductor materials such as 4H-SiC. These materials possess characteristics such as large bandgap, high temperature resistance, radiation resistance, and excellent chemical stability, enabling high-sensitivity ultraviolet detection. However, ultraviolet detection is easily affected by obstructions such as equipment casings and partitions, resulting in a significant decrease in detection performance within enclosed power equipment. In contrast, electromagnetic pulses possess a certain degree of medium penetration capability, exhibiting excellent advantages in non-line-of-sight detection. However, existing electromagnetic detectors typically cannot simultaneously perform ultraviolet detection, leading to current systems often employing separate designs for the ultraviolet detector and electromagnetic sensor. This results in problems such as complex structure, large size, high power consumption, and insufficient integration.

[0004] Therefore, there is an urgent need to develop a novel dual-mode detector that combines solar-blind ultraviolet detection and transient electromagnetic pulse detection capabilities, has a simple structure, high integration, and can adaptively switch operating modes according to environmental conditions, in order to meet the application requirements of online monitoring and intelligent early warning of arc faults in complex power scenarios. Summary of the Invention

[0005] To address the aforementioned technical problems and deficiencies, this invention provides a method based on... 4H A dual-mode detector based on SiC nanowire arrays and its fabrication method. This invention constructs a heterogeneous structure that enables photoelectric and electromagnetic detection to work in tandem, achieving solar-blind ultraviolet detection in unobstructed environments and transient electromagnetic pulse detection in obstructed environments, thereby improving the reliability and environmental adaptability of arc fault detection.

[0006] In a first aspect, the present invention provides a method based on 4H A dual-mode detector based on a SiC nanowire array, wherein the dual-mode detector is provided with an ITO transparent conductive glass substrate, and a PEDOT hole transport layer sequentially disposed on the ITO transparent conductive glass substrate. 4H -SiC nanowire array, black phosphorus film, silver electrode.

[0007] Specifically, the ITO transparent conductive glass substrate is used as the bottom electrode of the dual-mode detector and the ultraviolet light incident window; the hole transport layer and 4H -SiC nanowire arrays form heterojunctions; the 4H -SiC nanowire arrays are vertically arranged on the surface of the hole transport layer, serving as a solar-blind ultraviolet light absorption layer; the black phosphorus functional layer covers... 4H -The surface of the SiC nanowire array forms a nonlinear rectified interface with the top electrode; the top electrode is preferably a silver electrode, which is used to collect charge carriers and form an electromagnetic wave coupling structure.

[0008] Furthermore, based on the present invention... 4H In the dual-mode detector of the SiC nanowire array, the 4H -SiC nanowire array 4H -SiC nanowire arrays have a diameter of 50-200 nm and a thickness of 2-6 μm;

[0009] The thickness of the black phosphorus film is 50~300nm.

[0010] Furthermore, based on the present invention... 4H In the dual-mode detector of the SiC nanowire array, the thickness of the PEDOT hole transport layer is 50~300nm; The thickness of the silver electrode is 80~150nm.

[0011] Secondly, the present invention provides a method based on 4H The fabrication method of a dual-mode detector for SiC nanowire arrays includes: cleaning n-type... 4H -SiC single crystal wafer, after pretreatment 4H -SiC single crystal wafer; pretreated by electrochemical etching method 4H -SiC single crystal wafer, to obtain 4H -SiC nanowire array; black phosphorus solution was filtered by vacuum filtration to obtain a black phosphorus film; an ITO transparent conductive glass substrate coated with PEDOT:PSS was subjected to ultraviolet ozone treatment. 4H -SiC nanowire arrays were transferred to the surface of PEDOT:PSS, and after hot pressing, black phosphorus film was transferred and coated onto it. 4H A dual-mode detector is obtained by depositing silver electrodes on a SiC nanowire array using acetone film, followed by vacuum annealing and thermal evaporation.

[0012] Furthermore, based on the present invention... 4H In the fabrication method of the dual-mode detector of the SiC nanowire array, the electrochemical etching method includes: using a graphite plate as the cathode, a mixture of HF, C2H5OH and H2O2 as the electrolyte, and etching with pulsed constant current.

[0013] Furthermore, based on the present invention... 4H In the fabrication method of the dual-mode detector of the SiC nanowire array, the volume ratio of HF, C2H5OH and H2O2 is 3:6:1. The pulse constant current has a current of 0.1~0.2A, a pulse width of 3~8s, and an interval of 3~8s; The etching time is 20-30 minutes.

[0014] Furthermore, based on the present invention... 4H In the preparation method of the dual-mode detector of the SiC nanowire array, the mass concentration of the black phosphorus solution is 5~10 mg / mL.

[0015] Furthermore, based on the present invention... 4H In the fabrication method of the dual-mode detector of SiC nanowire array, the hot pressing treatment is carried out at a temperature of 150~200℃, a pressure of 0.1~3MPa, and a time of 20~40min.

[0016] Furthermore, based on the present invention... 4H In the fabrication method of the dual-mode detector of the SiC nanowire array, the vacuum annealing temperature is 200~250℃ and the time is 2~3h.

[0017] Thirdly, the present invention provides a basis 4H Application of dual-mode detectors based on SiC nanowire arrays in arc fault early warning and arc monitoring of power equipment.

[0018] Compared with the prior art, the technical solution provided by the present invention has at least the following beneficial effects or advantages: (1) This invention constructs 4H The heterostructure composed of SiC nanowire array and black phosphorus functional layer integrates two functions, solar-blind ultraviolet detection and transient electromagnetic pulse detection, in the same device, avoiding the problems of complex structure, large size and low system integration caused by the separate design of traditional ultraviolet detector and electromagnetic sensor.

[0019] (2) This invention utilizes PEDOT:PSS and 4H The heterojunction formed by the SiC nanowire array has a built-in electric field, enabling rapid separation and efficient transport of photogenerated carriers; simultaneously... 4H -SiC nanowire arrays have a large specific surface area and a good light trapping effect, which can effectively enhance ultraviolet light absorption and improve the photoresponse capability and detection sensitivity of the device.

[0020] (3) This invention utilizes the excellent broadband electromagnetic response characteristics of black phosphorus material and the nonlinear rectification effect of the black phosphorus / metal interface to achieve efficient reception and conversion of broadband transient electromagnetic pulse signals. This enables the device to stably detect electromagnetic signals generated by arc discharge even in optically shielded environments such as cardboard, plastic board and enclosed power equipment, which significantly improves the detection reliability in complex environments.

[0021] (4) The present invention does not require a mechanical switching device or additional control circuit, and can automatically realize adaptive switching between ultraviolet detection mode and electromagnetic pulse detection mode according to the external optical environment, thereby reducing system power consumption and improving the intelligence level and environmental adaptability of the device.

[0022] (5) The present invention uses mature processes such as electrochemical etching, vacuum filtration, hot pressing, vacuum annealing and thermal evaporation deposition to prepare devices. Each process step is simple and has good repeatability. It is highly compatible with existing semiconductor micro-nano processing technology and is suitable for large-area device preparation and engineering application. It has good industrialization prospects. Attached Figure Description

[0023] Figure 1 For based on 4H -Flowchart of the fabrication process of a dual-mode detector using SiC nanowire arrays.

[0024] Figure 2 For based on 4H - A schematic diagram of the detection mechanism of the dual-mode detector of SiC nanowire array. Among them, (a) is a schematic diagram of the mechanism of ultraviolet light and electromagnetic signal detection; (b) is the response curve of ultraviolet light detection; (c) is the response of the dual-mode detector to electromagnetic signals under different obstructions; (d) is the detection of electromagnetic signals by the dual-mode detector at different distances. Detailed Implementation

[0025] The technical solution of the present invention will be described below with reference to embodiments. However, the present invention is not limited to the following embodiments. Unless otherwise specified, the experimental methods and detection methods described in each embodiment are conventional methods; unless otherwise specified, the reagents and materials can be purchased commercially.

[0026] Example 1 This embodiment provides a method based on 4H Dual-mode detector of SiC nanowire array and its fabrication method.

[0027] The embodiment described in this example is based on 4H The dual-mode detector of the SiC nanowire array is provided with an ITO transparent conductive glass substrate and a PEDOT hole transport layer sequentially disposed on the ITO transparent conductive glass substrate. 4H -SiC nanowire array ( 4H-SiCNWAs), black phosphorus film, silver electrode.

[0028] The basis 4H Fabrication method of dual-mode detector of SiC nanowire array ( Figure 1 )as follows: S1. n-type 4H SiC single-crystal wafers were cut into 1cm × 1.5cm rectangles and ultrasonically cleaned sequentially in acetone, ethanol, and deionized water for 10 minutes each. Then, they were cleaned in a mixture of sulfuric acid and hydrogen peroxide (H₂SO₄:H₂O₂ = 3:1, v / v) for 10 minutes, followed by immersion in a 5% HF solution (volume concentration) for 2 minutes to remove the native oxide layer, yielding the pretreated wafer. 4H -SiC single crystal wafer.

[0029] S2. With pre-processed 4H Using a SiC single crystal wafer as the anode and a high-purity graphite plate as the cathode, a mixture of HF, C2H5OH, and H2O2 (HF:C2H5OH:H2O2=3:6:1, v / v / v) as the electrolyte, the pretreated substrate was etched under pulsed constant current (0.1A, pulse width 5s, interval 5s) at 25℃ and 300rpm stirring speed. 4H -SiC single crystal wafer 25 min, to obtain 4H -SiC nanowire array. After etching, rinse with deionized water. 4H -SiC nanowire arrays were then neutralized with 3wt% NaOH and dried with high-purity nitrogen to obtain vertical arrays with a length of 4μm and a diameter of 100nm. 4H -SiC nanowire array.

[0030] S3. Add 3 mg of black phosphorus powder to 50 mL of deionized water and stir evenly with a magnetic stirrer for 10 min to ensure thorough mixing, thus obtaining a black phosphorus solution. Use a vacuum filtration device and a mixed cellulose ester filter membrane (0.22 μm) to filter the solution, allowing the black phosphorus sheets to self-assemble into a membrane. Then, vacuum dry for 24 h to obtain a self-supporting black phosphorus film (100 nm thick).

[0031] S4. Treat the ITO transparent conductive glass coated with PEDOT:PSS (100nm thickness) with ultraviolet ozone for 10 minutes, then... 4H -SiC nanowire arrays were transferred onto the surface of PEDOT:PSS, hot-pressed at 200℃ and 0.2MPa for 20 min, and then covered with a black phosphorus film. 4H A mixed cellulose ester filter membrane was dissolved in acetone on a SiC nanowire array, then vacuum annealed at 200℃ for 2 hours (vacuum degree < 10 Pa), and a silver electrode (100 nm) was thermally evaporated and deposited on the surface of a black phosphorus film to obtain a dual-mode detector.

[0032] Example 2 This embodiment provides a method based on 4H Dual-mode detector of SiC nanowire array and its fabrication method.

[0033] The embodiment described in this example is based on 4H The dual-mode detector of the SiC nanowire array is provided with an ITO transparent conductive glass substrate and a PEDOT hole transport layer sequentially disposed on the ITO transparent conductive glass substrate. 4H -SiC nanowire array, black phosphorus film, silver electrode.

[0034] The basis 4H The fabrication method of the dual-mode detector of SiC nanowire array is as follows: S1. n-type 4H SiC single-crystal wafers were cut into 1cm × 1.5cm rectangles and ultrasonically cleaned sequentially in acetone, ethanol, and deionized water for 15 minutes each. Then, they were cleaned in a mixture of sulfuric acid and hydrogen peroxide (H₂SO₄:H₂O₂ = 3:1, v / v) for 15 minutes, followed by immersion in a 3% HF solution (volume concentration) for 5 minutes to remove the native oxide layer, yielding the pretreated wafer. 4H -SiC single crystal wafer.

[0035] S2. With pre-processed 4H Using a SiC single crystal wafer as the anode and a high-purity graphite plate as the cathode, a mixture of HF, C2H5OH, and H2O2 (HF:C2H5OH:H2O2=3:6:1, v / v / v) as the electrolyte, the pretreated substrate was etched under pulsed constant current (0.1A, pulse width 5s, interval 5s) at 25℃ and 300rpm stirring speed. 4H -SiC single crystal wafer 20 min, to obtain 4H -SiC nanowire array. After etching, rinse with deionized water. 4H -SiC nanowire array, then neutralized with 5wt% NaOH and dried with high-purity nitrogen to obtain a vertical 4H -SiC nanowire array.

[0036] S3. Add 5 mg of black phosphorus powder to 50 mL of deionized water and stir evenly with a magnetic stirrer for 15 min to ensure thorough mixing, thus obtaining a black phosphorus solution. Use a vacuum filtration device and a mixed cellulose ester filter membrane (0.22 μm) to filter the solution, allowing the black phosphorus sheets to self-assemble into a membrane. Then, vacuum dry for 24 h to obtain a self-supporting black phosphorus film (200 nm thick).

[0037] S4. Treat the ITO transparent conductive glass coated with PEDOT:PSS (200nm thickness) with ultraviolet ozone for 15 minutes, then... 4H -SiC nanowire arrays were transferred onto the surface of PEDOT:PSS, hot-pressed at 150°C and 1.5 MPa for 30 min, and then covered with a black phosphorus film. 4H A mixed cellulose ester filter membrane was dissolved in acetone on a SiC nanowire array, then vacuum annealed at 250°C for 2 hours (vacuum degree < 10 Pa), and a silver electrode (100 nm) was thermally evaporated and deposited on the surface of a black phosphorus film to obtain a dual-mode detector.

[0038] Example 3 This embodiment provides a method based on 4H Dual-mode detector of SiC nanowire array and its fabrication method.

[0039] The embodiment described in this example is based on 4H - Dual-mode detector of SiC nanowire array ( Figure 2 The substrate is provided with an ITO transparent conductive glass substrate, and a PEDOT hole transport layer is sequentially disposed on the ITO transparent conductive glass substrate. 4H -SiC nanowire array, black phosphorus film, silver electrode.

[0040] The basis 4H The fabrication method of the dual-mode detector of SiC nanowire array is as follows: S1. n-type 4H SiC single-crystal wafers were cut into 1cm × 1.5cm rectangles and ultrasonically cleaned sequentially in acetone, ethanol, and deionized water for 20 minutes each. Then, they were cleaned in a mixture of sulfuric acid and hydrogen peroxide (H₂SO₄:H₂O₂ = 3:1, v / v) for 20 minutes, followed by immersion in a 5% HF solution (volume concentration) for 2 minutes to remove the native oxide layer, yielding the pretreated wafer. 4H -SiC single crystal wafer.

[0041] S2. With pre-processed 4H Using a SiC single crystal wafer as the anode and a high-purity graphite plate as the cathode, a mixture of HF, C2H5OH, and H2O2 (HF:C2H5OH:H2O2 = 3:6:1, v / v / v) was used as the electrolyte. The pretreated substrate was etched under pulsed constant current (0.1A, pulse width 5s, interval 5s) at 30℃ and 500rpm stirring speed. 4H -SiC single crystal wafer 25 min, to obtain 4H -SiC nanowire array. After etching, rinse with deionized water. 4H -SiC nanowire array, then neutralized with 5wt% NaOH and dried with high-purity nitrogen to obtain a vertical 4H-SiC nanowire array.

[0042] S3. Add 5 mg of black phosphorus powder to 50 mL of deionized water and stir evenly with a magnetic stirrer for 15 min to ensure thorough mixing, thus obtaining a black phosphorus solution. Use a vacuum filtration device and a mixed cellulose ester filter membrane (0.22 μm) to filter the solution, allowing the black phosphorus sheets to self-assemble into a membrane. Then, vacuum dry for 24 h to obtain a self-supporting black phosphorus film (250 nm thick).

[0043] S4. Treat the ITO transparent conductive glass coated with PEDOT:PSS (250nm thickness) with ultraviolet ozone for 10 minutes, then... 4H -SiC nanowire arrays were transferred onto the surface of PEDOT:PSS, hot-pressed at 180℃ and 3.0MPa for 40 min, and then covered with a black phosphorus film. 4H A mixed cellulose ester filter membrane was dissolved in acetone on a SiC nanowire array, then vacuum annealed at 220℃ for 3 hours (vacuum degree < 10 Pa), and a silver electrode (100 nm) was thermally evaporated and deposited on the surface of a black phosphorus film to obtain a dual-mode detector.

[0044] 1. Detection performance under ultraviolet light: The photoresponse of the dual-mode detector was tested using a 365 nm ultraviolet light source at room temperature (1 V bias). The photoelectric response characteristics of the dual-mode detector were investigated by adjusting the optical power density. During the test, the dark current, photocurrent, response time, and recovery time of the device were recorded, and the responsivity, detectivity, and stability of the dual-mode detector were further evaluated. The detectivity of the dual-mode detector prepared in Example 1 was 6.5 × 10⁻⁶. 9 Jones, UV single-pulse response time is 0.58s, recovery time is 0.9s ( Figure 2 (b) of Example 2). The detectivity of the dual-mode detector prepared in Example 2 is 6.3 × 10⁻⁶. 9 Jones's UV single-pulse response time is 0.6 s, and the recovery time is 0.9 s. The detectivity of the dual-mode detector prepared in Example 3 is 6.2 × 10⁻⁶. 10 Jones, with a UV single-pulse response time of 0.63 s and a recovery time of 1.1 s. The dual-mode detector fabricated in this invention can generate a stable photoelectric response under low bias conditions, exhibiting high photoresponsivity, low dark current, and good cycling stability.

[0045] like Figure 2 As shown in (a) of the invention, in the dual-mode detector prepared by the present invention, the PEDOT hole transport layer and 4H -SiC nanowire arrays form pn heterojunctions, generating oriented... 4HThe SiC nanowire array points to the strong built-in electric field of the PEDOT hole transport layer and the black phosphorus film. Simultaneously, the black phosphorus film and silver electrode form a Schottky junction, and the ITO transparent conductive glass substrate, black phosphorus film, and silver electrode together constitute a broadband planar antenna. Based on the above structure, the working principle of ultraviolet light detection is as follows: Under ultraviolet light irradiation, 4H -SiC nanowire arrays absorb photons and excite electron-hole pairs (i.e., photogenerated carriers). Under the influence of the built-in electric field, the photogenerated carriers undergo separation and directional transport: electrons move towards... 4H The SiC nanowire array migrates and is eventually collected by the ITO transparent conductive glass substrate; holes migrate to the p-type PEDOT hole transport layer and the black phosphorus film, and are eventually collected by the silver electrode. This process generates a transient photocurrent in the external circuit, thereby achieving a rapid response to ultraviolet light.

[0046] 2. Electromagnetic Pulse Detection Performance: Under room temperature conditions (bias voltage of 1 V, distance of 1 cm), the electromagnetic pulse detection time in Example 1 was 40 ms, in Example 2 it was 38 ms, and in Example 3 it was 35 ms. Figure 2 As shown in (d), within different ranges of the switching distance from the arc, the dual-mode detector prepared in Example 1 can detect stable electromagnetic pulse signals, and the signal strength decreases regularly with increasing detection distance. At a detection distance of 5 cm, the response time of the dual-mode detector is 80 ms. This invention utilizes a controllable arc discharge platform to generate transient electromagnetic pulse signals. By changing the detection distance and the shielding material, the electromagnetic response capability of the dual-mode detector is tested. Tape, foam, A4 paper, cardboard, plastic, glass, and mica paper were used as shielding media to compare and analyze the output signals of the dual-mode detector. Figure 2 (c)). The above results show that the dual-mode detector can stably output electromagnetic response signals under different occlusion conditions, and the response amplitude decreases regularly with the increase of detection distance, indicating that the dual-mode detector has good anti-occlusion ability and adaptability to complex environments.

[0047] 3. Dual-mode detection of ultraviolet light and electromagnetic pulse: A dual-mode detector was installed in a simulated enclosed switchgear to test its adaptive dual-mode detection performance under real optical obstruction conditions. The switchgear was a metal enclosed cabinet without optical windows. The dual-mode detector was fixed to the inner wall of the cabinet, the data acquisition line was led out of the cabinet, and the arc discharge device was set on the outside of the cabinet to simulate the arc discharge situation in actual power equipment.

[0048] During the test, the cabinet door was first closed to completely block external ultraviolet light, and the arc source was then activated to discharge. Because the broadband transient electromagnetic pulse generated by the arc discharge can penetrate the gaps in the cabinet and part of the shielding medium, the dual-mode detector outputs a stable electromagnetic pulse response signal. Then, the cabinet door was opened, and a 365nm ultraviolet lamp was used to illuminate the dual-mode detector, which output a photocurrent signal. The cabinet door was then closed again, and the arc source was restarted. The dual-mode detector recovered its electromagnetic pulse response signal and output an electromagnetic pulse signal (…). Figure 2 (a)). The above results demonstrate that the dual-mode detector described in this invention can adaptively switch between ultraviolet detection mode and electromagnetic pulse detection mode according to changes in the external optical environment, without the need for additional mechanical switching devices or extra control circuits, thus completing arc discharge detection under different operating modes and exhibiting good environmental adaptability and detection reliability.

[0049] like Figure 2 As shown in (b), under optical shielding conditions, ultraviolet light cannot reach [the target area]. 4H With a SiC nanowire array, the dual-mode detector no longer generates photogenerated carriers, and the photocurrent signal disappears. When an arc discharge generates a broadband transient electromagnetic pulse, this electromagnetic signal is received by the electromagnetic coupling structure formed by the ITO transparent conductive glass substrate, the black phosphorus film, and the silver electrode, inducing an alternating voltage across the dual-mode detector. This alternating voltage is converted into a measurable DC signal through the nonlinear rectification effect of the black phosphorus / silver Schottky junction and the heterojunction interface, enabling effective detection of the electromagnetic pulse.

[0050] at the same time, 4H -SiC nanowire arrays possess a large specific surface area and a unique three-dimensional array structure, which enhances the local electric field distribution and improves the coupling efficiency between electromagnetic signals and the dual-mode detector, thereby enhancing the dual-mode detector's response to transient electromagnetic pulses. Furthermore, electromagnetic pulse signals can penetrate partially obstructing materials such as cardboard, plastic sheets, glass, and metal mesh. Therefore, even in complex obstruction environments, the dual-mode detector described in this invention can maintain a stable electromagnetic response, exhibiting excellent anti-obstruction performance and environmental adaptability.

[0051] Based on the physical mechanism of the dual-mode detector described above, this invention can also be combined with signal processing circuitry to achieve dual-mode operating state identification. Specifically, by real-time acquisition of the amplitude and characteristic parameters of the dual-mode detector's output signal and comparison with preset thresholds, when the output signal meets the determination conditions for the ultraviolet detection mode, the system identifies it as an ultraviolet detection state under unobstructed conditions; when the output signal meets the determination conditions for the electromagnetic pulse detection mode, the system identifies it as an electromagnetic pulse detection state under optical obstruction conditions. Both modes can complete signal reading and processing through the same data acquisition channel, eliminating the need for mechanical switching devices or independent detection units, thus achieving adaptive identification and switching of the dual-mode detector's operating modes.

[0052] The embodiments described above are some, but not all, of the embodiments of the present invention. The detailed description of the embodiments of the present invention is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art through related deductions and substitutions based on the inventive concept, without inventive effort, are within the scope of protection of the present invention.

Claims

1. A method based on 4H A dual-mode detector based on a SiC nanowire array, characterized in that... The dual-mode detector is provided with an ITO transparent conductive glass substrate, and a PEDOT hole transport layer sequentially disposed on the ITO transparent conductive glass substrate. 4H -SiC nanowire array, black phosphorus film, silver electrode.

2. The method based on claim 1 4H A dual-mode detector based on a SiC nanowire array, characterized in that... The 4H -SiC nanowire array 4H -SiC nanowires have a length of 2~6μm and a diameter of 50~200nm; The thickness of the black phosphorus film is 50~300nm.

3. The method based on claim 1 4H A dual-mode detector based on a SiC nanowire array, characterized in that... The thickness of the PEDOT hole transport layer is 50~300nm; The thickness of the silver electrode is 80~150nm.

4. A method based on any one of claims 1 to 3 4H The method for fabricating a dual-mode detector using a SiC nanowire array is characterized by, include: Cleaning n-type 4H -SiC single crystal wafer, after pretreatment 4H -SiC single crystal wafer; Pre-treatment by electrochemical etching 4H -SiC single crystal wafer, to obtain 4H -SiC nanowire array; Black phosphorus solution was filtered using vacuum filtration to obtain a black phosphorus film; an ITO transparent conductive glass substrate coated with PEDOT:PSS was then subjected to ultraviolet ozone treatment. 4H -SiC nanowire arrays were transferred to the surface of PEDOT:PSS, and after hot pressing, black phosphorus film was transferred and coated onto it. 4H A dual-mode detector is obtained by depositing silver electrodes on a SiC nanowire array using acetone film, followed by vacuum annealing and thermal evaporation.

5. The method based on claim 4 4H The method for fabricating a dual-mode detector using a SiC nanowire array is characterized by, The electrochemical etching method includes: using a graphite plate as the cathode, a mixture of HF, C2H5OH and H2O2 as the electrolyte, and etching with pulsed constant current.

6. The method based on claim 5 4H The method for fabricating a dual-mode detector using a SiC nanowire array is characterized by, The volume ratio of HF, C2H5OH and H2O2 is 3:6:1; The pulse constant current has a current of 0.1~0.2A, a pulse width of 3~8s, and an interval of 3~8s; The etching time is 20-30 minutes.

7. The method based on claim 4 4H The method for fabricating a dual-mode detector using a SiC nanowire array is characterized by, The mass concentration of the black phosphorus solution is 5~10 mg / mL.

8. The method based on claim 4 4H The method for fabricating a dual-mode detector using a SiC nanowire array is characterized by, The hot pressing treatment is performed at a temperature of 150~200℃, a pressure of 0.1~3MPa, and a time of 20~40min.

9. The method based on claim 4 4H The method for fabricating a dual-mode detector using a SiC nanowire array is characterized by, The vacuum annealing temperature is 200~250℃, and the time is 2~3h.

10. The system based on any one of claims 1 to 3 4H Application of dual-mode detectors based on SiC nanowire arrays in arc fault early warning and arc monitoring of power equipment.

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