A topological insulator high-efficiency photovoltaic device based on projection geometry regulation and a preparation method thereof

Abstract

The application discloses a kind of topological insulator high-efficiency photovoltaic devices based on projection geometry regulation and preparation method thereof.The device includes substrate, topological insulator light absorption layer (with non-zero topological chern number), projection geometry regulation module, first electrode layer, second electrode layer and light incidence window.Projection geometry regulation module is projected angle θ (θ=arctan (β_s / β_r), β_r² + β_s²=1) of topological insulator material by external field regulation, adjusts its photoelectric response characteristics;Incident light excites the photo-generated carrier of topological insulator surface state, is protected with long lifetime and high mobility by topological chern number, is collected by electrode layer and forms photoelectric current.The projection geometry regulation module continuously monitors projection angle change rate, whether the device is in stable topological state according to topological stability criterion γ² ≥ |1−k||∂C / ∂θ|||·h / 2 Real-time judgment, guarantee long-term working stability.The application realizes active controllable photoelectric conversion of topological insulator photovoltaic device, with high efficiency, wide spectral response, long-term stability, photoelectric conversion efficiency ≥15%, spectral response range 300-2500nm, can be applied to solar cell and photoelectric detector and other fields.

Description

Technical Field

[0001] This invention relates to the fields of photovoltaic device technology and topology materials technology, specifically to a high-efficiency photovoltaic device based on projective geometry control of a topological insulator and its fabrication method. This invention can be applied to fields such as solar cells, photodetectors, photothermal conversion devices, and space energy systems, and is particularly suitable for photovoltaic applications requiring high photoelectric conversion efficiency, wide spectral response, and long-term stability. Background Technology

[0002] Photovoltaic devices are devices that directly convert solar energy into electrical energy, and are a key technology for achieving renewable energy utilization and carbon neutrality goals. Traditional photovoltaic devices are mainly based on silicon-based PN junctions or perovskite materials. After decades of development, their photoelectric conversion efficiency has approached the theoretical limit, and breakthroughs in new physical mechanisms and material systems are urgently needed. Topological insulators are a class of quantum materials with nontrivial topological electronic band structures. Their bulk states are insulating while their surface states are conductive. The surface states are topologically protected and immune to defects and impurities. In recent years, researchers have discovered that topological insulators (such as Bi₂Se₃ and Bi₂Te₃) possess unique photoelectric response properties, showing great potential in the photovoltaic field. Existing topological insulator photovoltaic technology mainly suffers from the following problems: (i) Lack of active control methods for photovoltaic characteristics The photoelectric conversion efficiency of existing topological insulator photovoltaic devices is determined by the band structure of the material itself. Once the device is fabricated, the efficiency is fixed and lacks the ability to actively control the photoelectric conversion process, making it difficult to adapt to different lighting conditions and working environments. (ii) Insufficient broadband response capability Although existing topological insulator photovoltaic devices have demonstrated photoelectric response capabilities across the entire solar spectrum, their utilization efficiency varies significantly across different wavelengths of light energy, and they lack selective optimization methods for spectral response. (iii) Low separation efficiency of photogenerated carriers The efficiency of photogenerated carrier separation and collection on the surface states of topological insulators is limited by the coupling between the surface states and the bulk states, as well as the quality of electrode contact. Existing schemes lack active control over the carrier separation process. (iv) Insufficient long-term stability Topological insulators are prone to oxidation in air and lack stability criteria based on topological invariants, resulting in insufficient long-term operational stability and limiting their deployment in practical photovoltaic applications. To address the above problems, this invention provides a high-efficiency photovoltaic device based on projection geometry control of topological insulators and its fabrication method. Summary of the Invention

[0003] (a) Purpose of the invention This invention aims to solve the technical problems of existing topological insulator photovoltaic devices, such as lack of active control of photovoltaic characteristics, insufficient broadband response capability, low photogenerated carrier separation efficiency, and insufficient long-term stability. It provides a high-efficiency photovoltaic device based on projection geometry control and its fabrication method. (II) Technical Solution This invention provides a high-efficiency photovoltaic device based on projection geometry control of a topological insulator, characterized in that it comprises: A substrate; A topological insulator light-absorbing layer is disposed on the substrate and is made of a topological insulator material, having a non-zero topological Chern number; A projection geometry control module is connected to the topological insulator light absorption layer and is used to control the projection angle of the topological insulator material through an external field, thereby adjusting its photoelectric response characteristics. A first electrode layer is disposed on one side of the topological insulator light-absorbing layer; A second electrode layer is disposed on the other side of the topological insulator light-absorbing layer; A light incident window is disposed on the first electrode layer or the second electrode layer to allow incident light to enter the topological insulator light absorption layer. Mathematical framework for projection geometry control: Definition of projection angle: The projection angle θ is defined as: θ = arctan(β_s / β_r), β_r² + β_s² = 1 Rate of change of projection angle: During the operation of the photovoltaic device, the projection geometry control module continuously monitors the dynamic rate of change of the projection angle. The projection angle change rate reflects the response speed of a photovoltaic device to changes in the external environment (changes in light intensity, temperature, angle shift, etc.). when When the preset threshold is exceeded, it indicates that the device's operating conditions have changed significantly, and the system automatically triggers a readjustment of the projection angle. Topological stability criterion: The present invention uses the following stability criterion to determine whether the photoelectric conversion state of the topological insulator photovoltaic device is in a stable topological state: Where γ is the photon loss rate. denoted as the rate of change of the projection angle, C as the topological Chern number, k as the restitution coefficient, and h as Planck's constant. When the criterion is met, the photovoltaic device is in a stable topological state and the photoelectric conversion efficiency is stable; when the criterion is not met, feedback adjustment is triggered (such as re-optimizing the projection angle, adjusting the gate voltage, etc.) to ensure that the photovoltaic device always works in a highly efficient and stable state. Topological nontriviality condition: The condition for the topological insulator photovoltaic device to be in a topologically nontrivial phase is: Where θ0 is the theoretically optimal projection angle, and σ_θ is the topology protection bandwidth. When the above conditions are met, the surface states of the topological insulator photovoltaic device are in a topologically protected state, and the photogenerated carriers have long lifetimes and high mobility. Stability enhancement mechanism: The aforementioned topological stability criterion also serves as a long-term stability criterion for photovoltaic devices: during long-term continuous operation, continuous topological protection ensures that the surface states of the light-absorbing layer of the topological insulator are not destroyed, and the photoelectric conversion efficiency of the photovoltaic device does not decrease with operating time. Projection angle adjustment can compensate for performance degradation caused by factors such as temperature drift and photo-aging, extending the effective working life of the device. Photoelectric conversion principle: Incident light enters the light-absorbing layer of the topological insulator through the light incident window, exciting photogenerated electron-hole pairs on the surface states of the topological insulator. Under topological Chern number protection, the photogenerated carriers on the surface states exhibit long lifetimes and high mobility. These photogenerated carriers are collected between the first and second electrode layers, forming a photocurrent. The projection geometry control module optimizes the generation, separation, and collection efficiency of photogenerated carriers by adjusting the projection angle to alter the surface state dispersion relation of the topological insulator. Photovoltaic device structure: The topological insulator high-efficiency photovoltaic device adopts at least one of the following structures: Planar heterojunction structure: A topological insulator light-absorbing layer is disposed between two electrode layers; Bulk heterojunction structure: a mixture of topological insulator material and electron transport layer or hole transport layer; Nanostructure-enhanced structure: The topological insulator light-absorbing layer has a nanowire, nanosheet, or quantum dot structure. Performance parameters: Photoelectric conversion efficiency: ≥ 15% Spectral response range: 300-2500nm Open-circuit optical voltage: ≥ 0.5V Short-circuit photocurrent density: ≥ 25mA / cm² (III) Beneficial Effects Actively adjustable photovoltaic characteristics: The photoelectric conversion efficiency of photovoltaic devices is optimized in real time through projection geometry control, adapting to different lighting conditions and working environments; Broad spectrum high efficiency response: The topological surface states of the topological insulator support a broad spectrum photoelectric response, and the projection angle can be tuned to selectively optimize the light energy utilization efficiency of specific wavelength bands; High carrier separation efficiency: Topology-protected surface states have long carrier lifetimes and high mobility, and projection angle tuning can further optimize the carrier separation and collection process; Topological stability criterion: For the first time, a quantitative criterion for the stability of device operating state based on topological Chern number and projection angle was established to ensure the long-term stable operation of photovoltaic devices in real time; Long-term stability assurance: Topological stability criteria continuously monitor the device's operating status, projection angle adjustment compensates for performance degradation, and extends the device's effective operating life; Compatible with existing processes: Can be fabricated using standard semiconductor processes, suitable for large-scale production. Attached Figure Description

[0004] Figure 1 This is a schematic diagram of the overall structure of a high-efficiency photovoltaic device based on projection geometry control, provided in an embodiment of the present invention. Figure 2 This is a schematic diagram illustrating the projection geometry control and photoelectric conversion principle provided in an embodiment of the present invention. Figure 3 This is a schematic diagram of band structure modulation of a topological insulator photovoltaic device provided in an embodiment of the present invention. Figure 4 This is a schematic diagram of a nanostructure-enhanced topological insulator photovoltaic device provided in an embodiment of the present invention. Detailed Implementation

[0005] Example 1: Topological Insulator Planar Photovoltaic Device Based on Projection Geometric Control Step 1: Prepare the substrate A heavily doped silicon substrate with a resistivity ≤0.01Ω·cm was selected. The substrate underwent standard cleaning. Step 2: Fabrication of a topological insulator light-absorbing layer Bi₂Se₃ topological insulator films with thicknesses ranging from 50 to 200 nm were grown on substrates using molecular beam epitaxy or chemical vapor deposition. The films possessed non-zero topological Chern numbers C=1. Step 3: Prepare the electrode layer A transparent conductive electrode (ITO or AZO) is deposited on the surface of a topological insulator thin film as the first electrode layer, and a metal electrode (Au or Ag) is deposited on the back side of the substrate as the second electrode layer. Step 4: Configure the projection geometry control module A gate electrode is integrated into the device, and the projection angle θ of the topological insulator thin film is controlled by applying a gate voltage (0-10V). The projection angle is controlled within a range of 0.1-0.8 rad, with a control accuracy Δθ ≤ 0.001 rad. The projection angle θ is defined as θ = arctan(β_s / β_r), satisfying β_r² + β_s² = 1. Step 5: Stability Monitoring and Adaptive Control During device operation, the projection geometry control module continuously monitors the projection angle θ and its rate of change. Calculate the topological stability criterion γ ² ≥ |1−k||∂C / ∂θ|| |·h / 2. When the criterion is met, the device is in a stable topological state, and the photoelectric conversion efficiency is stable. When the criterion is not met, the system automatically adjusts the gate voltage and relocks the projection angle to the optimal value, ensuring that the device always operates in a highly efficient and stable state. The stability criterion also ensures the long-term operational stability of the device, and the surface states are protected by topology and do not degrade. Step 6: Packaging and Testing The device was packaged and its photoelectric conversion performance was tested under a standard solar simulator (AM1.5G, 100mW / cm²). The measured photoelectric conversion efficiency was ≥15%, and the open-circuit voltage was ≥0.5V. Example 2: Optimization of Spectral Response under Projection Angle Control Step 1: Fabrication of topological insulator photovoltaic devices Bi2Se3 topological insulator photovoltaic devices were prepared using the method described in Example 1. Step 2: Initial Spectral Response Test The spectral response of the device in the wavelength range of 300-2500 nm is measured under conditions without projection angle adjustment. Step 3: Projection Angle Scan Adjustment The projection angle θ was gradually adjusted by the gate voltage, and the spectral response was measured at θ = 0.2, 0.4, 0.6, and 0.8 rad. Step 4: Determining the optimal projection angle Analyze the spectral response data under different projection angles to determine the optimal projection angle θ_opt that maximizes the photoelectric conversion efficiency at the target operating wavelength. Step 5: Adaptive Regulation Based on real-time lighting conditions (such as morning, noon, and cloudy days), the projection angle is automatically adjusted to the optimal value to achieve dynamic optimization of photovoltaic device efficiency. During the adjustment process, the topological stability criterion is continuously monitored to ensure that each state is in a stable topological state. Example 3: Nanostructure-enhanced topological insulator photovoltaic device Step 1: Preparation of nanostructure templates Heavily doped silicon substrates with resistivity ≤0.01Ω·cm are selected. Ordered nanopore array templates are prepared on the substrate surface using anodic aluminum oxide template method or nanoimprint lithography, with pore diameters of 50-200nm, pore spacing of 100-300nm, and pore depths of 200-500nm. Step 2: Fabrication of topological insulator nanowire arrays Bi₂Se₃ nanowire arrays were grown in nanoporous templates using electrochemical deposition or chemical vapor deposition. The growth temperature was 200-300°C, the growth time was 10-60 minutes, and the nanowire diameter was 50-200 nm, with a length of 200-500 nm. The nanowire arrays exhibited a non-zero topological Chern number C=1, and the surface states of the nanowire sidewalls were topologically protected. Step 3: Remove template Wet etching was used to selectively remove the anolyte template, exposing an independent Bi₂Se₃ nanowire array. The nanowire array exhibited a hexagonal close-packed structure with a density of approximately 10⁻⁶. 8 -10 9 / cm². Step 4: Fabrication of a transparent conductive top electrode A transparent conductive layer (ITO or AZO) with a thickness of 100-200 nm is deposited on top of the nanowire array as the first electrode layer. The transparent conductive layer fills the gaps between the nanowires and forms an electrical contact with the tips of the nanowires. Step 5: Fabrication of the bottom electrode A metal electrode (Au or Ag) is deposited on the back side of the substrate as a second electrode layer. Step 6: Configure the projection geometry control module A gate electrode (located on the side or back of the substrate) is integrated into the device, and the projection angle θ of the nanowire array is controlled by applying a gate voltage (0-10V). The projection angle can be controlled within a range of 0.1-0.8 rad, with a control precision Δθ ≤ 0.001 rad. The projection angle of each nanowire in the nanowire array is uniformly controlled by the global gate voltage, and the topological Chern number of each nanowire remains consistent. Step 7: Optical Anti-reflection and Light Capture Enhancement Nanowire arrays naturally possess antireflection and light-trapping effects, with incident light undergoing multiple scattering and reflections between the nanowires, increasing the effective optical path by 5-10 times compared to planar structures. Combined with projection angle modulation, the light absorption characteristics of the nanowire surface can be further optimized. Step 8: Stability Monitoring and Adaptive Control During device operation, the projection geometry control module continuously monitors the projection angle θ and its rate of change. Calculate the topological stability criterion γ ² ≥ |1−k||∂C / ∂θ|| |·h / 2. When the criterion is met, the device is in a stable topological state, the nanowire surface states are topologically protected, and photogenerated carriers exhibit long lifetimes and high mobility. When the criterion is not met, the system automatically adjusts the gate voltage to relock the projection angle to the optimal value, ensuring that the device always operates in a highly efficient and stable state. The topological protection bandwidth σ_θ of the nanowire array is wider than that of a planar thin film, and the tolerance range of the stability criterion is larger. Step 9: Packaging and Testing The device was packaged, and its photoelectric conversion performance was tested under a standard solar simulator (AM1.5G, 100mW / cm²). The light-trapping effect of the nanowire array structure improved the light absorption rate by 30-50% compared to the planar structure, with a photoelectric conversion efficiency ≥20%, open-circuit photovoltage ≥0.55V, and short-circuit photocurrent density ≥35mA / cm². Example 4: Topological Insulator-Perovskite Composite Heterojunction Photovoltaic Device Step 1: Fabrication of substrate and bottom electrode An FTO conductive glass substrate with a resistivity ≤15Ω / sq was selected and used as the bottom electrode after standard cleaning. Step 2: Fabrication of a topological insulator electron transport layer Bi₂Te₃ topological insulator films with thicknesses of 20-50 nm were prepared on FTO substrates using solution methods or thermal evaporation methods. Bi₂Te₃ has a non-zero topological Chern number C=-1, and its surface states serve as electron transport channels. It is topologically protected and immune to defects, resulting in an electron mobility increase of more than 10 times. Step 3: Prepare the perovskite light-absorbing layer A perovskite precursor solution (FAO) is spin-coated onto a topological insulator electron transport layer. 85 Cs0. 15 PbI3 or MAPbI3 is annealed and crystallized to form a perovskite thin film with a thickness of 300-500 nm. The surface states of the topological insulator are aligned with the perovskite layer to form type I or type II bands, and the interfacial band offset is optimized by the projection angle. Step 4: Fabrication of the hole transport layer Hole transport material (Spiro-OMeTAD or PTAA) is spin-coated onto the perovskite light-absorbing layer with a thickness of 50-150 nm. Step 5: Fabrication of the top electrode Gold electrodes are deposited on the hole transport layer with a thickness of 80-100 nm. Step 6: Configure the projection geometry control module A gate electrode (located at the edge of the FTO substrate) is integrated into the device, and the projection angle θ of the Bi2Te3 electron transport layer is controlled by applying a gate voltage (0-5V). The projection angle can be controlled within a range of 0.1-0.6 rad with a control precision Δθ ≤ 0.001 rad. By controlling the projection angle, the Fermi level position of the Bi2Te3 surface states is altered, thereby optimizing the band alignment with the perovskite layer and reducing interfacial recombination losses. Step 7: Stability Monitoring and Adaptive Control During device operation, the projection geometry control module continuously monitors the projection angle θ and its rate of change. The topological stability criterion was calculated. When the criterion is satisfied, the Bi₂Te₃ electron transport layer is in a stable topological state, and the interface state density decreases to 10. 9 The stability criterion is on the order of cm⁻²eV⁻¹. When the criterion is not met, the system automatically adjusts the gate voltage and relocks the projection angle to the optimal value. The stability criterion also ensures that the surface states of the Bi₂Te₃ electron transport layer are not destroyed during long-term operation (>1000 hours), and the device efficiency decay rate is <5% / 1000h. Step 8: Packaging and Testing The device was packaged and its performance was tested under a standard solar simulator: photoelectric conversion efficiency ≥22%, open-circuit light voltage ≥1.10V, and fill factor ≥78%. Example 5: Flexible Topological Insulator Photovoltaic Device Step 1: Provide a flexible substrate Flexible substrates made of polyimide (PI) or polyethylene terephthalate (PET) with a thickness of 50-125 μm are selected and cleaned and surface-treated (plasma treatment or adhesive layer coating) to improve the surface energy of the substrate. Step 2: Fabrication of flexible bottom electrode A flexible transparent conductive layer (ITO or Ag nanowire network) with a thickness of 100-200 nm is deposited on a flexible substrate to serve as the bottom electrode. Ag nanowire networks exhibit excellent bending properties. Step 3: Fabrication of a flexible topological insulator light-absorbing layer Bi₂Se₃ topological insulator films with thicknesses of 50-150 nm were prepared on flexible bottom electrodes using low-temperature (<200°C) molecular beam epitaxy or solution methods. Bi₂Se₃ has a non-zero topological Chern number C=1. The topological Chern number remains unchanged (topologically protected) under bending conditions (bending radius 5-20 mm), and the surface states are unaffected by strain. Step 4: Fabrication of flexible top electrode A flexible transparent conductive layer (Ag nanowire network or PEDOT:PSS) is deposited on a topological insulator thin film as a top electrode. Step 5: Configure the projection geometry control module A flexible gate electrode (located at the substrate edge or back) is integrated into a flexible device, and the projection angle θ of the Bi2Se3 thin film is controlled by applying a gate voltage (0-8V). The projection angle control range is 0.1-0.8 rad, and the control accuracy Δθ≤0.001 rad. The projection angle control accuracy is not affected when the device is bent. Step 6: Bending adaptability test Photovoltaic performance was tested in both planar (bending radius ∞) and bent (bending radii 5 mm, 10 mm, 20 mm) conditions. This verifies that the topology-protected surface states are unaffected by bending conditions, and the device performance degradation is <10% (after 1000 bends). Step 7: Stability Monitoring and Adaptive Control During device operation, the projection geometry control module continuously monitors the projection angle θ and its rate of change. The topological stability criterion is calculated. When the criterion is met, the topological protection of the flexible device effectively shields the influence of bending strain on the surface states; when the criterion is not met, the system automatically adjusts the gate voltage or mechanical stress compensation to relock the projection angle to the optimal value. The stability criterion remains effective under bending dynamic conditions, ensuring that the flexible device maintains efficient and stable operation during repeated bending. Step 8: Packaging and Testing The device is flexibly packaged (using a flexible barrier film), and its photoelectric conversion performance is tested under a standard solar simulator: photoelectric conversion efficiency ≥14% (planar state), ≥12% (bent state, bending radius 5mm), and efficiency retention rate ≥90% after 1000 bends. Example 6: Topological Insulator Photovoltaic-Photothermal-Thermoelectric Combined Generation Device Step 1: Fabrication of the thermoelectric bottom electrode A thermoelectric arm array (P-type Bi2Te3 and N-type Bi2Te3 arranged alternately) was fabricated on the back side of the substrate to form a thermoelectric conversion layer. Step 2: Fabrication of a topological insulator light-absorbing layer Bi₂Se₃ topological insulator films with a thickness of 100-300 nm were prepared on thermoelectric bottom electrodes to serve as light-absorbing layers. Bi₂Se₃ exhibits both photovoltaic and photothermal effects and can absorb full-spectrum light energy. Step 3: Configure the projection geometry control module A projection geometry control module is integrated into the device to control the projection angle θ of Bi2Se3 by applying a gate voltage (0-10V), thereby switching between operating modes. Photovoltaic mode (θ≈0.3 rad): Optimizing photovoltaic conversion efficiency Photothermal mode (θ≈0.7 rad): Optimizing photothermal conversion efficiency Thermoelectric mode (θ≈0.5 rad): Optimizing thermoelectric conversion efficiency Polygeneration mode (θ≈0.2 rad): Simultaneously achieves three conversions, maximizing total energy utilization. The projection angle switching time is less than 1μs, and it supports fast mode switching to adapt to changes in lighting conditions. Step 4: Fabrication of the top electrode and light incident window A semi-transparent top electrode was fabricated on a Bi2Se3 light-absorbing layer, which also serves as a light incident window and a photovoltaic output electrode. Step 5: Multi-generation performance testing Total energy utilization rate was measured under the combined heat and power (CHP) mode: photovoltaic conversion efficiency ≥12%, photothermal conversion efficiency ≥30%, thermoelectric conversion efficiency ≥5%, and total energy utilization rate ≥47%. Step 6: Adaptive Mode Switching Based on real-time light intensity and temperature conditions, the projection geometry control module automatically switches its operating mode: Strong sunlight (>800 W / m²): Polygeneration mode to maximize total energy utilization. Medium sunlight (300-800 W / m²): Photovoltaic mode, priority power generation Low light intensity (<300 W / m²): Thermoelectric mode, generating electricity using temperature difference. Achieve all-weather, full-spectrum energy utilization. Terminology Explanation Terminology Meaning The projection angle (θ) is a geometric parameter describing the projection direction in fiber bundle projection mapping, where θ = arctan(β_s / β_r). Projection geometry control is a technique for precisely controlling a physical system by configuring the projection angle θ. Topological insulators are topological materials that are insulating in their bulk states and conductive in their surface states, with the surface states being topologically protected. The topological Chern number (C) is a topological invariant that describes the topological nontriviality of the band structure of a topological material, and takes integer values. The light-absorbing layer is a functional layer in photovoltaic devices that absorbs light energy and generates photogenerated carriers. Topological stability criteria are quantitative criteria for determining whether a device is in a stable topological state, including parameters such as projection angle change rate, Chern number, and restitution coefficient.

Claims

1. A high-efficiency photovoltaic device based on topological insulators with projection geometry control, characterized in that, include: A substrate; A topological insulator light-absorbing layer is disposed on the substrate and is made of a topological insulator material, having a non-zero topological Chern number; A projection geometry control module is connected to the topological insulator light absorption layer and is used to control the projection angle of the topological insulator material through an external field, thereby adjusting its photoelectric response characteristics. A first electrode layer is disposed on one side of the topological insulator light-absorbing layer; A second electrode layer is disposed on the other side of the topological insulator light-absorbing layer; A light incident window is disposed on the first electrode layer or the second electrode layer to allow incident light to enter the topological insulator light absorption layer.

2. The device according to claim 1, characterized in that: The topological insulator material includes at least one of Bi2Se3, Bi2Te3, or Sb2Te3.

3. The device according to claim 1, characterized in that: The projection geometry control module controls the projection angle of the topological insulator light absorption layer through at least one of electric field control, light field control, or stress control.

4. The device according to claim 1, characterized in that: The projection angle θ is defined as θ = arctan(β_s / β_r), where β_r and β_s satisfy the projection constraint β_r² + β_s² = 1.

5. The device according to claim 1, characterized in that: The structure of the device is at least one of a planar heterojunction structure, a bulk heterojunction structure, or a nanostructure-reinforced structure.

6. The device according to claim 1, characterized in that: The device has a photoelectric conversion efficiency of ≥15% and a spectral response range covering 300-2500nm.

7. The device according to claim 1, characterized in that: The projection geometry control module automatically adjusts the projection angle according to real-time lighting conditions to achieve dynamic optimization of photovoltaic device efficiency.

8. A method for fabricating a high-efficiency photovoltaic device based on topological insulators using projection geometry control, characterized in that, Includes the following steps: (1) Provide a substrate; (2) A topological insulator light-absorbing layer is prepared on the substrate, wherein the topological insulator material has a non-zero topological Chern number; (3) A first electrode layer is prepared on one side of the topological insulator light-absorbing layer; (4) A second electrode layer is prepared on the other side of the topological insulator light-absorbing layer; (5) Configure a projection geometry control module, wherein the control module controls the projection angle of the topological insulator material through an external field; (6) A light incident window is provided on the first electrode layer or the second electrode layer.

9. The device according to claim 1, characterized in that: The projection geometry control module includes a gate electrode and a feedback control circuit. The feedback control circuit automatically adjusts the gate voltage according to the monitored projection angle change rate to lock the projection angle to the optimal value.

10. The device according to claim 1, characterized in that: The device further includes a packaging layer that covers the first electrode layer and the light incident window, and the packaging layer is a transparent packaging layer.

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