Solar cells, modules and systems

Abstract

The application relates to the technical field of solar cells, and discloses a solar cell, a preparation method, an assembly and a system thereof, wherein the solar cell comprises a silicon substrate, an electrode located on the back surface of the silicon substrate, and an isolation glue layer located on the front surface of the silicon substrate; the front surface of the silicon substrate comprises a central region and an edge region, the edge region is arranged on the two sides of the central region along a first direction and / or a second direction; a plurality of first isolation patterns are arranged in the central region; a plurality of second isolation patterns are arranged in the edge region; the first isolation patterns and the second isolation patterns are different; the first isolation patterns and the second isolation patterns form the non-centrally-symmetrical isolation glue layer; the coverage of the first isolation patterns in the central region is f1, the coverage of the second isolation patterns in the edge region is f2, and f2>f1 is satisfied. According to the application, the optical obstruction can be reduced, the protection of the edge region can be strengthened, and the AOI recognition rate is high.

Description

Technical Field

[0001] This invention relates to the field of solar cell technology, and more particularly to a solar cell, module, and system. Background Technology

[0002] Back-contact solar cells have both positive and negative electrodes located on the back of the cell, with no grid lines obstructing the front, thus achieving a higher light-receiving area and conversion efficiency. However, back-contact solar cells have the following requirements during module encapsulation: (1) forming a local protrusion structure on the front of the cell, i.e., an insulating adhesive layer, to prevent solder ribbons or other metal objects from causing mechanical scratches to the front surface of the cell, anti-reflective layer, etc., during module lamination; (2) regulating the stress during module lamination through this front protrusion structure to avoid microcracks caused by stress concentration; (3) maintaining high light transmittance as much as possible to reduce optical loss.

[0003] The existing front-side separator layer of solar cells is uniformly distributed and centrally symmetrically arranged, which presents the following problems: Central symmetry requires the central and edge areas of the cell to have the same protective pattern density and shape. During the lamination process of BC cell modules, the edge areas of the cells bear the greatest stress at the intersection of solder ribbons, making them prone to microcracks and warping. Furthermore, when the front-side separator is completely centrally symmetrical, the AOI (Automated Optical Inspection) system lacks asymmetrical geometric reference points when determining the cell's orientation and angle. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to provide a solar cell, module and system that can simultaneously reduce optical shading, enhance edge area protection and achieve high AOI recognition rate.

[0005] The technical problem to be solved by the present invention is to provide a solar cell, module and system that can adaptively disperse the lamination stress in different regions and avoid local stress concentration.

[0006] To solve the above-mentioned technical problems, the present invention provides a solar cell, including a silicon substrate, an electrode located on the back side of the silicon substrate, and an insulating adhesive layer located on the front side of the silicon substrate; The front side of the silicon substrate includes a central region and an edge region, with the edge regions located on both sides of the central region along a first direction and / or a second direction; the central region is provided with a plurality of first isolation patterns, and the edge regions are provided with a plurality of second isolation patterns; Each of the first isolation patterns and each of the second isolation patterns are different, and the first isolation patterns and the second isolation patterns constitute an isolation adhesive layer arranged in a non-centrally symmetrical manner; The coverage rate of the first isolation pattern in the central region is f1, and the coverage rate of the second isolation pattern in the edge region is f2, which satisfies: f2 > f1.

[0007] In some implementations, the coverage of the first isolation pattern in the central region is f1, and the coverage of the second isolation pattern in the edge region is f2; the coverage of the first isolation pattern on the silicon substrate is f3, and the coverage of the second isolation pattern on the silicon substrate is f4. The distribution density of the first isolation pattern in the central region is D1, the distribution density of the second isolation pattern in the edge region is D2, the area of ​​a single first isolation pattern is S1, and the area of ​​a single second isolation pattern is S2, which satisfies: f1=D1*S1; f2 = D2 * S2; f3=D1*a*S1; f4 = D2 * b * S2; Where a and b are coefficients, a is 0.6~0.9 and b is 0.1~0.4.

[0008] In some implementations, the first isolation pattern has a coverage of 11% to 34% in the central region; The second isolation pattern has a coverage rate of 35% to 90% in the edge region.

[0009] In some embodiments, the isolation adhesive layer has a coverage of 20% to 50% on the front side of the silicon substrate; the first isolation pattern has a coverage of 10% to 20% on the front side of the silicon substrate.

[0010] In some embodiments, the width of the first isolation pattern along the first direction is W1, the length along the second direction is L1, and the area of ​​a single first isolation pattern is S1; the width of the second isolation pattern along the first direction is W2, the length along the second direction is L2, and the area of ​​a single second isolation pattern is S2, which satisfy at least one of the following formulas: |W1-W2|>0; |L1-L2|>0; |S1-S2|>0.

[0011] In some embodiments, the ratio of the width W1 of the first isolation pattern to the width W2 of the second isolation pattern is 1:1 to 2.5:1; The ratio of the length L1 of the first isolation pattern to the length L2 of the second isolation pattern is 1:10 to 1:1800; The ratio of the area S1 of the first isolation graphic to the area S2 of the second isolation graphic is 1:60 to 1:800.

[0012] In some implementations, the distribution density of the first isolation pattern in the central region is D1, and the distribution density of the second isolation pattern in the edge region is D2, which satisfies |D1-D2|>0.

[0013] In some embodiments, the distribution density D1 of the first isolation pattern in the central region is 0.02~10 patterns / mm. 2 The distribution density D2 of the second isolation pattern in the edge region is 0.007~0.15 per mm. 2 ; The area S1 of a single first isolation pattern is 0.1 mm. 2 ~65mm 2 The area S2 of a single second isolation pattern is 70 mm². 2 ~150mm 2 .

[0014] In some embodiments, the first isolation pattern is an isolation block arranged in a discrete dot matrix, and the second isolation pattern is an isolation strip arranged in an array, with a preset interval between the isolation block and the isolation strip.

[0015] In some implementations, the spacing between the isolation blocks is equal or gradually decreases from the central region to the edge region; The spacing of the isolation strips is equal from the central region to the edge region, or gradually decreases.

[0016] In some embodiments, the area of ​​the isolation block is 0.1 mm. 2 ~1mm 2 The spacing between the isolation blocks is 0.5mm to 2.0mm, and the spacing between the isolation blocks and the isolation strips is 0.5mm to 5.0mm.

[0017] In some embodiments, the projection shape of the isolation block perpendicular to the front side of the silicon substrate is at least one of the following: (I) Circular or oval; (II) Rectangle; (III) Cross-shaped, star-shaped, or hexagonal; (Ⅳ) Irregular shape.

[0018] In some embodiments, the projection shape of the isolation block perpendicular to the front side of the silicon substrate is circular, and the diameter of the isolation block is 400 μm to 650 μm; and / or The isolation block, projected perpendicularly to the front side of the silicon substrate, is elliptical in shape, with a major axis of 1.0 mm to 5.0 mm and a minor axis of 0.3 mm to 1.5 mm, and a major-to-minor axis ratio ≥ 2:1; and / or The isolation block has a rectangular shape projected perpendicular to the front side of the silicon substrate, and the aspect ratio of the isolation block is ≤2.5:1; and / or The isolation block, projected perpendicularly to the front side of the silicon substrate, is hexagonal in shape, with a side length of 0.3mm to 1.0mm; and / or The projection shape of the isolation block perpendicular to the front side of the silicon substrate is cross-shaped or star-shaped, and the diameter of the outer circle of the isolation block is 0.5mm~2.0mm.

[0019] In some embodiments, the second isolation pattern includes multiple continuous isolation strips, each isolation strip having a linewidth of 400μm to 650μm and an aspect ratio of 60:1 to 800:1, and the distance between the isolation strip and the edge of the silicon substrate is 0.2mm to 0.5mm.

[0020] In some implementations, the first isolation pattern is an array of isolation lines, and the second isolation pattern is an array of isolation strips.

[0021] In some embodiments, the center-to-center distance of the isolation lines is equal or gradually decreases from the central region to the edge region; The spacing of the isolation strips is equal from the central region to the edge region, or gradually decreases.

[0022] In some embodiments, the first isolation pattern includes multiple segmented isolation lines, each isolation line having a line width of 200μm to 350μm and an aspect ratio of 10:1 to 80:1. In the second direction, the spacing between the isolation lines is 0.5mm to 3.0mm; In the first direction, the center-to-center distance of the isolation lines is 1.0 mm to 2.0 mm.

[0023] In some embodiments, the second isolation pattern includes multiple continuous isolation strips, each isolation strip having a line width of 400μm to 650μm and an aspect ratio of 7:1 to 50:1.

[0024] In some embodiments, the isolation lines and isolation strips extend along a second direction, and at least one of the isolation lines is connected to at least one of the isolation strips.

[0025] In some embodiments, the central region is further provided with a dividing strip extending along a first direction, the dividing strip being connected to the isolation line.

[0026] In some embodiments, the ends of the separator strip extend beyond the isolation line.

[0027] In some implementations, there is a height difference between the first isolation pattern and the second isolation pattern, the height difference being 0.1 μm to 8.5 μm.

[0028] In some embodiments, the thickness of the first isolation pattern is 3.5 μm to 9 μm; the thickness of the second isolation pattern is 3.5 μm to 12 μm.

[0029] In some embodiments, positioning marking patterns are also provided at one or more corners of the silicon substrate.

[0030] In some embodiments, the area of ​​a single positioning mark graphic is 25 mm² to 100 mm².

[0031] In some embodiments, the refractive index of the cured release adhesive layer is 1.45~1.50, and the light transmittance of the adhesive film is ≥99.5%.

[0032] Accordingly, the present invention also discloses a solar cell module, including the aforementioned solar cell and solder strips for connecting the solar cell.

[0033] In some embodiments, the solder strip is disposed at the edge region of the solar cell, and the projection of the solder strip onto the silicon substrate at least partially overlaps with the projection of the second isolation pattern onto the silicon substrate.

[0034] Accordingly, the present invention also discloses a solar cell system, including the solar cell module described above.

[0035] Implementing this invention has the following beneficial effects: The silicon substrate of this invention's solar cell includes a central region and an edge region on its front side. The central region has several first isolation patterns, and the edge regions have several second isolation patterns. Each first and second isolation pattern is different. The first and second isolation patterns form a non-centrosymmetrically arranged insulating layer. The coverage of the first isolation patterns in the central region is lower than the coverage of the second isolation patterns in the edge regions. This invention achieves low optical shading in the central region, enhanced protection through lamination stress in the edge regions, and overall AOI (Optical Image Processing) recognition with a high recognition rate.

[0036] The first isolation pattern has a lower coverage rate in the central area than the second isolation pattern in the edge area. This allows the edge area to be more fully covered by the isolation adhesive layer, effectively improving its protection of the passivation layer and other front functional layers in that area. Simultaneously, during the battery module lamination process, the edge area experiences greater stress from the solder ribbon intersections. The high coverage in the edge area allows it to distribute the stress over a larger area when subjected to external pressure during lamination and stacking, reducing the pressure per unit area and effectively mitigating stress-induced damage. This overall reduces scratches and stress damage in the edge area, improves the passivation effect, reduces bonding, and ultimately improves battery conversion efficiency.

[0037] For the central region where the lamination stress is relatively low, a low coverage setting is achieved by using discretely arranged isolation blocks or multiple segmented isolation lines. The gaps between the isolation blocks or isolation lines can achieve a more uniform distribution of lamination stress, reduce overall optical loss, and thus effectively improve the overall battery conversion efficiency.

[0038] Each of the first isolation patterns and each of the second isolation patterns are different. The first isolation patterns and the second isolation patterns constitute a non-centrally symmetrically arranged isolation adhesive layer. When the AOI automatic optical inspection system determines the front and back direction and the angle of the battery, it can provide asymmetrical geometric reference points to enable the entire pattern to be recognized by AOI and improve the recognition rate of AOI recognition. Attached Figure Description

[0039] Figure 1 This is a schematic diagram of the structure of an embodiment of a solar cell according to the present invention; Figure 2 This is a schematic diagram of another embodiment of a solar cell according to the present invention; Figure 3 This is a schematic diagram of another embodiment of a solar cell according to the present invention; Figure 4 This is a schematic diagram of another embodiment of a solar cell according to the present invention; Figure 5 This is a schematic diagram of another embodiment of a solar cell according to the present invention. Detailed Implementation

[0040] To make the objectives, technical solutions, and advantages clearer, the present invention will be further described in detail below with reference to specific embodiments.

[0041] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0042] Unless otherwise stated or there is any contradiction, the terms or phrases used herein have the following meanings: In this document, “one or more” means any one, two or more of the listed items.

[0043] In this document, the optional range of "and / or", "or / and", and "and / or" includes any one of two or more of the related listed items, as well as any and all combinations of the related listed items, including any two related listed items, any more related listed items, or a combination of all the related listed items.

[0044] In this document, terms such as “further,” “even further,” and “especially” are used to describe the purpose and indicate differences in content, but should not be construed as limiting the scope of protection of this application.

[0045] In this document, terms such as "first aspect," "second aspect," "third aspect," and "fourth aspect" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or quantity, nor should they be construed as implicitly specifying the importance or quantity of the indicated technical features. Furthermore, "first," "second," "third," and "fourth" serve only as a non-exhaustive enumeration and should be understood as not constituting a closed limitation on quantity. Therefore, a feature specified as "first" or "second" may explicitly or implicitly include at least one of those features. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0046] In the description of this application, "a number" means at least one, such as one, two, etc., unless otherwise expressly and specifically defined.

[0047] In this application, numerical ranges are referred to as continuous unless otherwise specified, and include the minimum and maximum values ​​of the range, as well as every value between the minimum and maximum values. Furthermore, when the range refers to integers, it includes every integer between the minimum and maximum values ​​of the range. Additionally, when multiple ranges are provided to describe a feature or characteristic, the ranges may be merged. In other words, unless otherwise specified, all ranges disclosed herein should be understood to include any and all subranges to which they are incorporated.

[0048] In this application, the technical features described in an open-ended manner include both closed technical solutions consisting of the listed features and open technical solutions that include the listed features.

[0049] Unless otherwise specified, the percentage content mentioned in this application refers to mass percentage for solid-liquid mixtures and solid-phase-solid mixtures, and volume percentage for liquid-phase-liquid mixtures.

[0050] Unless otherwise specified, all percentage concentrations mentioned in this application refer to the final concentration. The final concentration refers to the proportion of the added component in the system after the addition of that component.

[0051] like Figures 1-5 As shown, the present invention provides a solar cell, including a silicon substrate 10, an electrode located on the back side of the silicon substrate, and an insulating adhesive layer 30 located on the front side of the silicon substrate; The front side of the silicon substrate 10 includes a central region 11 and an edge region 12. The edge regions 12 are located on both sides of the central region 11 along a first direction and / or a second direction. The central region 11 is provided with a plurality of first isolation patterns 31, and the edge regions 12 are provided with a plurality of second isolation patterns 32. Each of the first isolation patterns 31 and each of the second isolation patterns 32 are different, and the first isolation patterns 31 and the second isolation patterns 32 constitute an isolation adhesive layer 30 arranged in a non-centrally symmetrical manner; The first isolation pattern 31 has a coverage rate of f1 in the central region, and the second isolation pattern 32 has a coverage rate of f2 in the edge region, which satisfies: f2 > f1.

[0052] It is understood that the silicon substrate 10 of the solar cell is used to receive incident light and generate photogenerated carriers. It has a back side and a front side arranged opposite to each other. The front side is usually the light-facing side, and the insulating adhesive layer 30 on the light-facing side protects the light-facing side of the cell body. The back side is usually the back-light side. Since the back-light side of the cell body includes several fine grids, the insulating adhesive layer 30 can protect the fine grids when the solar cells are stacked together, preventing the surface of the solar cell from being scratched by the grid lines on the surface of the stacked solar cells, and ensuring the photoelectric conversion efficiency of the solar cell. Figure 1 The area shown by the dashed line is the central region 11, and the edge regions 12 are located on both sides of the central region 11 along the first direction and / or the second direction.

[0053] In this embodiment, by controlling the partition coverage rate (equivalent to the coverage area ratio) of the isolation pattern, the overall optical loss is reduced while ensuring that each area of ​​the light-receiving surface of the battery structure is effectively protected. The coverage rate f1 of the first isolation pattern 31 in the central area is lower than the coverage rate f2 of the second isolation pattern 32 in the edge area, which allows the edge area to be covered more by the isolation adhesive layer, effectively improving its protection effect on the passivation layer and other front functional layers in this area. At the same time, during the battery module lamination process, the edge area of ​​the battery is subjected to greater stress from the solder ribbon intersection. The high coverage rate of the edge area allows the stress to be distributed over a larger area when subjected to external pressure during lamination and stacking, reducing the pressure per unit area and effectively mitigating stress-induced damage. This effectively reduces scratches and stress damage in the edge area, improves the passivation effect in this area, reduces composite, and thus effectively improves the battery conversion efficiency.

[0054] For the central region where the lamination stress is relatively low, a low coverage setting is achieved by using discretely arranged isolation blocks or multiple segmented isolation lines. The gaps between the isolation blocks or isolation lines can achieve a more uniform distribution of lamination stress, reduce overall optical loss, and thus effectively improve the overall battery conversion efficiency.

[0055] Each of the first isolation patterns 31 and each of the second isolation patterns 32 are different. The first isolation patterns 31 and the second isolation patterns 32 constitute a non-centrally symmetrically arranged isolation adhesive layer 30. The pattern does not have 180° rotational symmetry with respect to the geometric center of the battery, and / or the pattern does not have mirror symmetry with respect to any geometric central axis of the battery. When the AOI automatic optical inspection system determines the front and back direction and the angle of the battery, it can provide asymmetrical geometric reference points so that the entire pattern can be recognized by AOI, thereby improving the recognition rate of AOI recognition.

[0056] It is understood that the first isolation pattern 31 and the second isolation pattern 32 constitute a non-centrosymmetric arrangement of the separator layer 30. This non-centrosymmetric arrangement of the separator layer can be achieved by the presence of at least one asymmetric feature in the first isolation pattern 31 and the second isolation pattern 32, including but not limited to differences in at least one of the following: distribution density, geometry, or size; the pattern not having 180° rotational symmetry with respect to the geometric center of the battery; and / or the pattern not having mirror symmetry with respect to any geometric central axis of the battery. Non-centrosymmetry can also be achieved through positioning mark patterns located at one or more corners of the silicon substrate.

[0057] In some embodiments, the coverage of the first isolation pattern 31 in the central region is f1, and the coverage of the second isolation pattern 32 in the edge region is f2, which satisfies: f2 = (3~10) * f1. Preferably, f2 = (4~8) * f1.

[0058] In some embodiments, the first isolation pattern 31 has a coverage rate of 11% to 34% in the central region 11, exemplarily 11%, 15%, 18%, 20%, 22%, 25%, 28%, 30%, and 34%, but is not limited thereto. The second isolation pattern 32 has a coverage rate of 35% to 90% in the edge region 12, exemplarily 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, and 90%, but is not limited thereto. Preferably, the first isolation pattern 31 has a coverage rate of 15% to 30% in the central region 11, and the second isolation pattern 32 has a coverage rate of 40% to 80% in the edge region 12.

[0059] In some embodiments, the coverage of the first isolation pattern 31 in the central region 11 is f1, and the coverage of the second isolation pattern 32 in the edge region 12 is f2; the coverage of the first isolation pattern 31 on the silicon substrate 10 is f3, and the coverage of the second isolation pattern 32 on the silicon substrate 10 is f4. The distribution density of the first isolation pattern 31 in the central region 11 is D1, the distribution density of the second isolation pattern 32 in the edge region 12 is D2, the area of ​​a single first isolation pattern 31 is S1, and the area of ​​a single second isolation pattern 32 is S2, which satisfies: f1=D1*S1; f2 = D2 * S2; f3=D1*a*S1; f4 = D2 * b * S2; Where a and b are coefficients, a is 0.6~0.9, b is 0.1~0.4, and f2 / f1 = (3~10).

[0060] By controlling the coverage of the first isolation pattern in the central region, the coverage of the second isolation pattern in the edge region, the coverage of the first isolation pattern on the silicon substrate, and the coverage of the second isolation pattern on the silicon substrate, and by coordinating the zoned coverage and overall coverage of the first and second isolation patterns, it is possible to ensure that the protective coverage is sufficient to cover areas of the battery body that are easily scratched and subjected to greater stress damage, while further reducing the overall obstruction of the light-receiving surface by the isolation pattern, which is beneficial to further reducing optical loss. Moreover, it can also achieve a more uniform lamination stress distribution, avoiding battery warping and cracking, thereby further improving battery conversion efficiency and reliability.

[0061] In some embodiments, the first isolation pattern 31 has a coverage of 10% to 20% on the front side of the silicon substrate, exemplarily 10%, 12%, 13%, 15%, 16%, 18%, and 20%, but is not limited thereto. The isolation adhesive layer 30 has a coverage of 20% to 50% on the front side of the silicon substrate, exemplarily 20%, 25%, 30%, 35%, 40%, 45%, and 50%, but is not limited thereto. Preferably, the first isolation pattern 31 has a coverage of 12% to 18% on the front side of the silicon substrate, and the isolation adhesive layer 30 has a coverage of 25% to 45% on the front side of the silicon substrate.

[0062] In some embodiments, the first isolation pattern 31 has a width of W1 along the first direction, a length of L1 along the second direction, and an area of ​​S1 for a single first isolation pattern 31; the second isolation pattern 32 has a width of W2 along the first direction, a length of L2 along the second direction, and an area of ​​S2 for a single second isolation pattern 32, satisfying at least one of the following formulas: |W1-W2|>0; |L1-L2|>0; |S1-S2|>0.

[0063] The edge region of the battery experiences greater stress from the weld band intersection, while the lamination stress in the central region is relatively smaller. At least one of the width, length, or area of ​​the first isolation pattern 31 and the second isolation pattern 32 differs. By setting the first isolation pattern 31 and the second isolation pattern 32 with different sizes, shapes, or areas in the central region 11 and the edge region 12, the edge effect can be mitigated, the concentrated shear force can be transformed into dispersed compressive stress, and the risk of microcracks caused by stress concentration in the central region of the battery cell can be effectively reduced.

[0064] Preferably, the central region achieves low coverage using discretely arranged isolation blocks or multiple segmented isolation lines, while the edge region achieves high coverage using longer and wider isolation strips. The breaks between the isolation blocks or lines in the central region allow for a more uniform distribution of lamination stress, reducing overall optical loss and thus effectively improving overall battery conversion efficiency. The high coverage of the isolation strips in the edge region allows for the distribution of stress over a larger area during lamination, stacking, or other processes subject to external pressure, reducing the pressure per unit area and effectively mitigating stress-induced damage. At this point, the following conditions are met: W2-W1 > 0; L2-L1 > 0; S2-S1 > 0.

[0065] In some embodiments, the ratio of the width W1 of the first isolation pattern 31 to the width W2 of the second isolation pattern 32 is 1:1 to 2.5:1, exemplarily 1:1, 1.5:1, 1.8:1, 2.0:1, 2.2:1, and 2.5:1, but not limited thereto. Preferably, the ratio of the width W1 of the first isolation pattern to the width W2 of the second isolation pattern is 1.5:1 to 2.5:1.

[0066] The ratio of the length L1 of the first isolation pattern 31 to the length L2 of the second isolation pattern 32 is 1:10 to 1:1800, exemplarily 1:10, 1:100, 1:200, 1:500, 1:600, 1:800, 1:900, 1:1000, 1:1200, 1:1500, and 1:1800, but not limited thereto. Preferably, the ratio of the length L1 of the first isolation pattern to the length L2 of the second isolation pattern is 1:100 to 1:1000.

[0067] The ratio of the area S1 of the first isolation pattern 31 to the area S2 of the second isolation pattern 32 is 1:60 to 1:800, exemplarily 1:60, 1:100, 1:200, 1:300, 1:400, 1:500, 1:600, and 1:800, but not limited thereto. Preferably, the ratio of the area S1 of the first isolation pattern to the area S2 of the second isolation pattern is 1:100 to 1:500.

[0068] In some embodiments, the area S1 of a single first isolation pattern 31 is 0.1 mm. 2 ~65mm 2 For example, 0.1mm 2 1mm 2 10mm 2 20mm 2 35mm 2 45mm 2 55mm 2 65mm 2 However, it is not limited to this. Preferably, the area S1 of a single first isolation pattern is 1 mm. 2 ~50mm 2 .

[0069] The area S2 of a single second isolation pattern 32 is 70 mm. 2 ~150mm 2 An example is 70mm 2 80mm 2 90mm 2 100mm 2 110mm 2 120mm 2130mm 2 140mm 2 150mm 2 However, it is not limited to this. Preferably, the area of ​​a single second isolation pattern is S2, which is 80 mm². 2 ~130mm 2 .

[0070] In some embodiments, the distribution density of the first isolation pattern 31 in the central region is D1, and the distribution density of the second isolation pattern 32 in the edge region is D2, satisfying |D1-D2|>0. The edge region of the battery experiences greater stress from the solder ribbon intersections, while the lamination stress in the central region is relatively smaller. The difference in distribution density between the first isolation pattern 31 and the second isolation pattern 32 allows for a more uniform stress distribution. In a preferred embodiment, D1-D2>0. By setting a higher distribution density of isolation patterns in the central region, the disconnected areas between multiple first isolation patterns can be effectively utilized, resulting in a more uniform lamination stress distribution and reducing overall optical loss.

[0071] In some embodiments, the distribution density D1 of the first isolation pattern in the central region is 0.02 patterns / mm. 2 ~10 pieces / mm 2 The distribution density D2 of the second isolation pattern in the edge region is 0.007 per mm. 2 ~0.15 pieces / mm 2 .

[0072] It should be noted that distribution density refers to the density per unit area (1 mm²). 2 The number of isolated figures is calculated as follows: the number of isolated figures is the product of the distribution density D1 and the area of ​​the central region; the number of isolated figures is the product of the distribution density D2 and the area of ​​the edge region.

[0073] Understandably, the total area of ​​the solar cells is calculated based on the battery specifications, with the central area accounting for 60% to 90% of the total battery area and the edge area accounting for 10% to 40% of the total battery area.

[0074] In some embodiments, the refractive index of the cured release adhesive layer is 1.45~1.50, and the light transmittance of the film is ≥99.5%, which can minimize the loss of light during transmission, thereby improving the efficiency and performance of the optical system.

[0075] The present invention will be further illustrated below with specific embodiments. Example 1 like Figure 1 and Figure 2As shown, a solar cell includes a silicon substrate 10, an electrode located on the back side of the silicon substrate, and an insulating adhesive layer 30 located on the front side of the silicon substrate. The front side of the silicon substrate 10 includes a central region 11 and an edge region 12. The edge regions 12 are located on both sides of the central region 11 along a first direction and / or a second direction. The central region 11 is provided with a plurality of first isolation patterns 31, and the edge regions 12 are provided with a plurality of second isolation patterns 32. Each of the first isolation patterns 31 and each of the second isolation patterns 32 are different, and the first isolation patterns 31 and the second isolation patterns 32 constitute an isolation adhesive layer 30 arranged in a non-centrally symmetrical manner; The first isolation pattern 31 has a coverage rate of f1 in the central region, and the second isolation pattern 32 has a coverage rate of f2 in the edge region, which satisfies: f2 > f1.

[0076] The first isolation pattern 31 is an isolation block arranged in a discrete dot matrix, and the spacing between the isolation blocks is equal from the central region to the edge region. The second isolation pattern 32 is an isolation strip extending along a second direction, and the isolation strip is arranged in an array along a first direction. The spacing between the isolation strip is equal from the central region to the edge region. A preset interval is formed between the isolation blocks and the isolation strip.

[0077] In some embodiments, the area of ​​the isolation block is 0.1 mm. 2 ~1mm 2 For example, 0.1mm 2 0.2mm 2 0.4mm 2 0.5mm 2 0.6mm 2 0.8mm 2 0.9mm 2 1.0mm 2 However, it is not limited to this. Preferably, the area of ​​the isolation block is 0.2 mm². 2 ~0.8mm 2 .

[0078] The spacing between the isolation blocks is 0.5mm to 2.0mm, with 0.5mm being an example. 2 0.8mm 2 1.0mm 2 1.2mm 2 1.4mm 2 1.6mm 2 1.8mm 2 1.0mm 2 However, it is not limited to this. Preferably, the spacing between the isolation blocks is 0.8mm to 1.5mm.

[0079] The spacing between the isolation block and the isolation strip is 0.5mm to 5.0mm, with exemplary values ​​being 0.5mm, 0.8mm, 1.0mm, 1.5mm, 2.0mm, 2.5mm, 3.0mm, 3.5mm, 4.0mm, 4.5mm, and 5.0mm, but not limited to these. Preferably, the spacing between the isolation block and the isolation strip is 1mm to 4.0mm.

[0080] In some embodiments, the projection shape of the separator perpendicular to the front side of the silicon substrate is at least one of the following: (I) circular or elliptical; (II) rectangular; (III) cross-shaped, star-shaped or hexagonal; (IV) irregular shape. Its structure is simple, which facilitates the fabrication of the separator and can improve the design freedom of the solar cell.

[0081] In some implementations, such as Figure 1 As shown, the separator's projection perpendicular to the front side of the silicon substrate is circular, and its diameter is 400μm~650μm. This structure is simple and easy to fabricate, thereby further reducing the fabrication difficulty of the separator and saving costs. The discrete circular separator units form discrete spots on the battery surface, which helps to disperse stress in the central region.

[0082] In some implementations, such as Figure 2 As shown, the projection shape of the isolation block perpendicular to the front side of the silicon substrate is non-circular, specifically including: (1) The projection shape of the isolation block perpendicular to the front side of the silicon substrate is elliptical. The major axis of the isolation block is 1.0 mm to 5.0 mm, the minor axis is 0.3 mm to 1.5 mm, and the ratio of the major axis to the minor axis is ≥2:1. (2) The projection shape of the isolation block perpendicular to the front side of the silicon substrate is rectangular, and the aspect ratio of the isolation block is ≤2.5:1; (3) The projection shape of the isolation block perpendicular to the front side of the silicon substrate is hexagonal, and the side length of the isolation block is 0.3mm~1.0mm; (4) The projection shape of the isolation block perpendicular to the front side of the silicon substrate is cross-shaped or star-shaped, and the diameter of the outer circle of the isolation block is 0.5mm~2.0mm.

[0083] The isolation block has a non-circular projection shape perpendicular to the front side of the silicon substrate. The non-circular cross-section has a longer perimeter at the same coverage, providing longer current collection continuity, more uniform lamination stress distribution, and a new dimension for AOI recognition.

[0084] It should be noted that, Figure 2 The projection shape of some of the isolation blocks perpendicular to the front side of the silicon substrate is elliptical, while the projection shape of some of the isolation blocks perpendicular to the front side of the silicon substrate is circular.

[0085] In some embodiments, the second isolation pattern 32 includes multiple continuous isolation strips, each with a linewidth of 400μm to 650μm and an aspect ratio of 60:1 to 800:1. The distance between the isolation strip and the edge of the silicon substrate is 0.2mm to 0.5mm. Within this range, the protective effect of the isolation layer 30 on the edge region 12 and its control over optical loss can be effectively balanced, so that it has both good protective effect and low optical loss, further improving the battery conversion efficiency.

[0086] The second isolation pattern includes multiple continuous isolation strips, allowing the edge area to be more fully covered by the isolation adhesive layer, effectively enhancing its protective effect on the passivation layer and other front functional layers in that area. Simultaneously, during the battery module lamination process, the edge area of ​​the battery experiences significant stress from the solder ribbon intersections. The high coverage of the edge area allows it to distribute the stress over a larger area during lamination, stacking, and other processes subject to external pressure, reducing the pressure per unit area and effectively mitigating stress-induced damage. This overall reduces scratches and stress damage in the edge area, improves the passivation effect, reduces degradation, and ultimately improves battery conversion efficiency.

[0087] In some embodiments, there is a height difference between the first isolation pattern 31 and the second isolation pattern 32, the height difference being 0.1 μm to 8.5 μm. Specifically, the thickness of the first isolation pattern 31 is 3.5 μm to 9 μm; the thickness of the second isolation pattern 32 is 3.5 μm to 12 μm.

[0088] In this embodiment, the height of the second isolation pattern 32 in the edge region is greater than the height of the first isolation pattern 31 in the central region, so that the edge region has a higher ability to withstand and resist scratches and stress, and can obtain a better protection effect.

[0089] In some embodiments, positioning mark patterns 40 are also provided at one or more corners of the silicon substrate.

[0090] In some embodiments, the area of ​​a single positioning mark pattern 40 is 25 mm² to 100 mm².

[0091] In this embodiment, by setting the position of the positioning mark pattern 40 at one or more corners of the silicon substrate, the first isolation pattern 31 and the second isolation pattern 32 are arranged in a non-centrally symmetrical isolation adhesive layer 30. The pattern does not have 180° rotational symmetry with respect to the geometric center of the battery, and / or the pattern does not have mirror symmetry with respect to any geometric central axis of the battery. This provides an asymmetrical geometric reference point when the AOI automatic optical inspection system determines the front and back orientation and angle of the battery, so that the entire pattern can be recognized by AOI, thereby improving the recognition rate of AOI.

[0092] Example 2 Unlike Example 1, Figure 3 The first isolation pattern 31 shown is an isolation block arranged in a discrete dot matrix, and the second isolation pattern 32 is an isolation strip extending along the second direction. The spacing between the isolation blocks gradually decreases from the central region to the edge region; the spacing between the isolation strips gradually decreases from the central region to the edge region.

[0093] This embodiment utilizes the changing trend of the interval between the first isolation pattern 31 and the second isolation pattern 32 to uniformly distribute the stress in the central and edge regions of the battery cell, in conjunction with the arrangement of grid lines and solder strips. This alleviates the edge effect, transforms concentrated shear force into dispersed compressive stress, effectively reduces the risk of microcracks caused by stress concentration in the central region of the battery cell, and at the same time increases the protective strength of the edge region, reduces scratches and stress damage in the edge region, and improves the passivation effect of the region.

[0094] Example 3 like Figure 4 As shown, a solar cell includes a silicon substrate 10, an electrode located on the back side of the silicon substrate, and an insulating adhesive layer 30 located on the front side of the silicon substrate. The front side of the silicon substrate 10 includes a central region 11 and an edge region 12. The edge regions 12 are located on both sides of the central region 11 along a first direction and / or a second direction. The central region 11 is provided with a plurality of first isolation patterns 31, and the edge regions 12 are provided with a plurality of second isolation patterns 32. Each of the first isolation patterns 31 and each of the second isolation patterns 32 are different, and the first isolation patterns 31 and the second isolation patterns 32 constitute an isolation adhesive layer 30 arranged in a non-centrally symmetrical manner; The first isolation pattern 31 has a coverage rate of f1 in the central region, and the second isolation pattern 32 has a coverage rate of f2 in the edge region, which satisfies: f2 > f1.

[0095] The first isolation pattern 31 consists of arrayed isolation lines, with the center-to-center distance between the isolation lines being equal from the central region to the edge region. The second isolation pattern 32 consists of arrayed isolation strips, with the spacing between the isolation strips being equal from the central region to the edge region.

[0096] In some embodiments, the first isolation pattern 31 includes multiple segmented isolation lines, each with a linewidth of 200μm to 350μm, exemplarily 200μm, 220μm, 250μm, 280μm, 300μm, 320μm, and 350μm, but not limited thereto. The aspect ratio of each isolation line is 10:1 to 80:1, exemplarily 10:1, 20:1, 30:1, 50:1, 60:1, 70:1, and 80:1, but not limited thereto. Preferably, the linewidth of each isolation line is 250μm to 320μm, and the aspect ratio of each isolation line is 15:1 to 70:1.

[0097] In the second direction, the spacing between the isolation lines is 0.5mm to 3.0mm, exemplarily 0.5mm, 1.0mm, 1.5mm, 2.0mm, 2.5mm, and 3.0mm, but not limited thereto; in the first direction, the center-to-center distance between the isolation lines is 1.0mm to 2.0mm, exemplarily 1.0mm, 1.2mm, 1.5mm, 1.8mm, and 2.0mm, but not limited thereto. Preferably, the spacing between the isolation lines is 0.8mm to 2.5mm, and the center-to-center distance between the isolation lines is 1.2mm to 1.8mm.

[0098] The first isolation pattern 31 consists of multiple segmented isolation lines. The breaks between these segments allow for a more uniform distribution of lamination stress, reducing overall optical loss and thus effectively improving overall battery conversion efficiency. Furthermore, compared to isolation blocks, elongated linear isolation lines provide longer current collection continuity and a more uniform distribution of lamination stress at the same coverage.

[0099] In some embodiments, the second isolation pattern 32 includes a plurality of continuous isolation strips, the isolation lines and the isolation strips extending along a second direction, and at least one of the isolation lines is connected to at least one of the isolation strips, with the isolation strips located on both sides of the isolation lines along the second direction.

[0100] In this embodiment, the line width of each isolation strip is 400μm~650μm, and the aspect ratio of each isolation strip is 7:1~50:1.

[0101] In some embodiments, the second isolation pattern 32 includes multiple continuous isolation strips, the isolation lines and isolation strips extending along a second direction, the isolation strips and isolation lines being parallel to each other and not connected to each other, and the isolation strips being disposed on both sides of the isolation lines along a first direction.

[0102] In this embodiment, the line width of each isolation strip is 400μm~650μm, and the aspect ratio of each isolation strip is 60:1~800:1.

[0103] The edge area employs a wider isolation strip. On one hand, this allows for greater coverage of the protective layer, effectively enhancing its protection of the passivation layer and other front functional layers in that area. Simultaneously, the widened design of the reinforced section in the edge area disperses stress over a larger area during lamination, stacking, or other processes subject to external pressure, reducing the pressure per unit area and effectively mitigating stress-induced damage. This overall reduces scratches and stress damage in the edge area. On the other hand, the central area utilizes multiple segmented isolation lines to ensure effective protection of all light-receiving areas of the battery structure while minimizing overall optical loss.

[0104] In some embodiments, the central region further includes a dividing strip extending along a first direction, the dividing strip being connected to the isolation line. The ends of the dividing strip extend beyond the isolation line.

[0105] Example 4 Unlike Example 3, as Figure 5 As shown, the first isolation pattern 31 is an array of isolation lines, and the second isolation pattern 32 is an isolation strip extending along the second direction. The spacing between the isolation lines gradually decreases from the central region to the edge region; the spacing between the isolation strips gradually decreases from the central region to the edge region.

[0106] This embodiment utilizes the changing trend of the interval between the first isolation pattern 31 and the second isolation pattern 32 to uniformly distribute the stress in the central and edge regions of the battery cell, in conjunction with the arrangement of grid lines and solder strips. This alleviates the edge effect, transforms concentrated shear force into dispersed compressive stress, effectively reduces the risk of microcracks caused by stress concentration in the central region of the battery cell, and at the same time increases the protective strength of the edge region, reduces scratches and stress damage in the edge region, and improves the passivation effect of the region.

[0107] Example 5 The present invention also discloses a solar cell module, including the aforementioned solar cell and a solder strip for connecting the solar cell. The solder strip is disposed in the edge region of the solar cell, and the projection of the solder strip on the silicon substrate at least partially overlaps with the projection of the second isolation pattern on the silicon substrate.

[0108] In existing back-contact solar cells, electrode current collection primarily occurs at the cell edges, and a centrally symmetrical arrangement cannot provide localized reinforcement for the edge current collection area. This embodiment utilizes the aforementioned solar cell, employing a non-centrally symmetrical arrangement of the insulating adhesive layer and varying coverage between the central and edge regions to enhance protection of the edge current collection area. The projection of the solder ribbon onto the silicon substrate at least partially overlaps with the projection of the second insulating pattern onto the silicon substrate, dispersing the stress borne by the solder ribbon and other current collection structures across a larger area of ​​the insulating adhesive. This reduces the pressure per unit area, effectively mitigating stress-induced damage and thus significantly reducing scratches and stress damage in the edge region overall.

[0109] Understandably, the solar cell module may also include a metal frame, front panel, back panel, and encapsulant film, or other necessary components.

[0110] Example 6 This invention also discloses a solar cell system, including the solar cell module described in Example 7. In this embodiment, the solar cell system can be applied in photovoltaic power plants, such as ground-mounted power plants, rooftop power plants, and floating power plants, and can also be applied to equipment or devices that utilize solar energy to generate electricity, such as user solar power supplies, solar streetlights, solar cars, solar buildings, etc. Of course, it is understood that the application scenarios of the solar cell system are not limited to these; that is to say, the solar cell system can be applied in all fields that require solar energy to generate electricity. Taking a photovoltaic power generation system grid as an example, the photovoltaic system may include a photovoltaic array, a combiner box, and an inverter. The photovoltaic array may be an array combination of multiple battery modules. For example, multiple battery modules may form multiple photovoltaic arrays. The photovoltaic array is connected to the combiner box, which can collect the current generated by the photovoltaic array. The collected current flows through the inverter and is converted into AC power required by the mains power grid before being connected to the mains power grid to realize solar power supply.

[0111] The above description is a preferred embodiment of the invention. It should be noted that, for those skilled in the art, several improvements and modifications can be made without departing from the principle of the invention, and these improvements and modifications are also considered to be within the scope of protection.

Claims

1. A solar cell, characterized in that, It includes a silicon substrate, an electrode located on the back side of the silicon substrate, and an insulating adhesive layer located on the front side of the silicon substrate; The front side of the silicon substrate includes a central region and an edge region, with the edge regions located on both sides of the central region along a first direction and / or a second direction; the central region is provided with a plurality of first isolation patterns, and the edge regions are provided with a plurality of second isolation patterns; Each of the first isolation patterns and each of the second isolation patterns are different, and the first isolation patterns and the second isolation patterns constitute an isolation adhesive layer arranged in a non-centrally symmetrical manner; The coverage rate of the first isolation pattern in the central region is f1, and the coverage rate of the second isolation pattern in the edge region is f2, which satisfies: f2 > f1.

2. The solar cell as described in claim 1, characterized in that, The coverage of the first isolation pattern in the central region is f1, and the coverage of the second isolation pattern in the edge region is f2; the coverage of the first isolation pattern on the silicon substrate is f3, and the coverage of the second isolation pattern on the silicon substrate is f4. The distribution density of the first isolation pattern in the central region is D1, the distribution density of the second isolation pattern in the edge region is D2, the area of ​​a single first isolation pattern is S1, and the area of ​​a single second isolation pattern is S2, which satisfies: f1=D1*S1; f2 = D2 * S2; f3=D1*a*S1; f4 = D2 * b * S2; Where a and b are coefficients, a is 0.6~0.9, b is 0.1~0.4, and f2 / f1 = (3~10).

3. The solar cell as described in claim 2, characterized in that, The first isolation pattern has a coverage rate of 11% to 34% in the central region; The second isolation pattern has a coverage rate of 35% to 90% in the edge region.

4. The solar cell as described in claim 2, characterized in that, The isolation adhesive layer has a coverage of 20% to 50% on the front side of the silicon substrate; the first isolation pattern has a coverage of 10% to 20% on the front side of the silicon substrate.

5. The solar cell as described in claim 1, characterized in that, The first isolation pattern has a width of W1 along the first direction, a length of L1 along the second direction, and an area of ​​S1 for a single first isolation pattern; the second isolation pattern has a width of W2 along the first direction, a length of L2 along the second direction, and an area of ​​S2 for a single second isolation pattern, satisfying at least one of the following formulas: |W1-W2|>0; |L1-L2|>0; |S1-S2|>0.

6. The solar cell as described in claim 5, characterized in that, The ratio of the width W1 of the first isolation graphic to the width W2 of the second isolation graphic is 1:1 to 2.5:1; The ratio of the length L1 of the first isolation pattern to the length L2 of the second isolation pattern is 1:10 to 1:1800; The ratio of the area S1 of the first isolation graphic to the area S2 of the second isolation graphic is 1:60 to 1:

800.

7. The solar cell according to claim 2, characterized in that, The distribution density of the first isolation pattern in the central region is D1, and the distribution density of the second isolation pattern in the edge region is D2, which satisfies |D1-D2|>0.

8. The solar cell as claimed in claim 2, characterized in that, The distribution density D1 of the first isolation pattern in the central region is 0.02 pieces / mm. 2 ~10 pieces / mm 2 The distribution density D2 of the second isolation pattern in the edge region is 0.007 per mm. 2 ~0.15 pieces / mm 2 ; The area S1 of a single first isolation pattern is 0.1 mm. 2 ~65mm 2 The area S2 of a single second isolation pattern is 70 mm². 2 ~150mm 2 .

9. The solar cell according to any one of claims 1 to 8, characterized in that, The first isolation pattern is an isolation block arranged in a discrete dot matrix, and the second isolation pattern is an isolation strip arranged in an array, with a preset interval between the isolation block and the isolation strip.

10. The solar cell as claimed in claim 9, characterized in that, The spacing between the isolation blocks is equal or gradually decreases from the central region to the edge region; The spacing of the isolation strips is equal from the central region to the edge region, or gradually decreases.

11. The solar cell as claimed in claim 9, characterized in that, The area of ​​the isolation block is 0.1 mm. 2 ~1mm 2 The spacing between the isolation blocks is 0.5mm to 2.0mm, and the spacing between the isolation blocks and the isolation strips is 0.5mm to 5.0mm.

12. The solar cell as claimed in claim 9, characterized in that, The projection shape of the isolation block perpendicular to the front side of the silicon substrate is at least one of the following: (I) Circular or oval; (II) Rectangle; (III) Cross-shaped, star-shaped, or hexagonal; (Ⅳ) Irregular shape.

13. The solar cell according to claim 12, characterized in that, The isolation block has a circular projection shape perpendicular to the front side of the silicon substrate, and the diameter of the isolation block is 400μm~650μm; and / or The isolation block, projected perpendicularly to the front side of the silicon substrate, is elliptical in shape, with a major axis of 1.0mm~5.0mm and a minor axis of 0.3mm~1.5mm, and a major-to-minor axis ratio ≥2:1; and / or The isolation block has a rectangular shape projected perpendicular to the front side of the silicon substrate, and the aspect ratio of the isolation block is ≤2.5:1; and / or The isolation block, projected perpendicularly to the front side of the silicon substrate, is hexagonal in shape, with a side length of 0.3mm to 1.0mm; and / or The projection shape of the isolation block perpendicular to the front side of the silicon substrate is cross-shaped or star-shaped, and the diameter of the outer circle of the isolation block is 0.5mm~2.0mm.

14. The solar cell as claimed in claim 9, characterized in that, The second isolation pattern includes multiple continuous isolation strips, each with a linewidth of 400μm to 650μm and an aspect ratio of 60:1 to 800:

1. The distance between the isolation strip and the edge of the silicon substrate is 0.2mm to 0.5mm.

15. The solar cell according to any one of claims 1 to 8, characterized in that, The first isolation pattern is an array of isolation lines, and the second isolation pattern is an array of isolation strips.

16. The solar cell as claimed in claim 15, characterized in that, The center-to-center distance of the isolation lines is equal or gradually decreases from the central region to the edge region. The spacing of the isolation strips is equal from the central region to the edge region, or gradually decreases.

17. The solar cell as claimed in claim 15, characterized in that, The first isolation pattern includes multiple segmented isolation lines, each isolation line having a line width of 200μm to 350μm and an aspect ratio of 10:1 to 80:

1. In the second direction, the spacing between the isolation lines is 0.5mm to 3.0mm; In the first direction, the center-to-center distance of the isolation lines is 1.0 mm to 2.0 mm.

18. The solar cell as claimed in claim 15, characterized in that, The second isolation pattern includes multiple continuous isolation strips, each with a line width of 400μm to 650μm and an aspect ratio of 7:1 to 50:

1.

19. The solar cell as claimed in claim 15, characterized in that, The isolation lines and isolation strips extend along the second direction, and at least one of the isolation lines is connected to at least one of the isolation strips.

20. The solar cell as claimed in claim 19, characterized in that, The central area is also provided with a dividing strip extending along a first direction, and the dividing strip is connected to the isolation line.

21. The solar cell according to claim 20, characterized in that, The ends of the separator strip extend beyond the isolation line.

22. The solar cell according to claim 1, characterized in that, There is a height difference between the first isolation pattern and the second isolation pattern, and the height difference is 0.1μm~8.5μm.

23. The solar cell as claimed in claim 22, characterized in that, The thickness of the first isolation pattern is 3.5μm to 9μm; the thickness of the second isolation pattern is 3.5μm to 12μm.

24. The solar cell according to claim 1, characterized in that, It also includes positioning markings located at one or more corners of the silicon substrate.

25. The solar cell as claimed in claim 24, characterized in that, The area of ​​a single positioning mark graphic is 25 mm² to 100 mm².

26. The solar cell according to claim 1, characterized in that, The refractive index of the cured release adhesive layer is 1.45~1.50, and the light transmittance of the adhesive film is ≥99.5%.

27. A solar cell module, characterized in that, It includes a solar cell as described in any one of claims 1 to 26 and a solder strip for connecting the solar cell.

28. The solar cell module as claimed in claim 27, characterized in that, The solder strip is located at the edge region of the solar cell, and the projection of the solder strip on the silicon substrate at least partially overlaps with the projection of the second isolation pattern on the silicon substrate.

29. A solar cell system, characterized in that, Includes the solar cell module as described in claim 27.

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