Optoelectronic devices and related modules and apparatuses

Abstract

The application provides an optoelectronic device and related modules and devices to improve the sealing of the optoelectronic device. In the optoelectronic device, a first connecting module connects a first plane of a first module and a first plane of a second module, so that the first module and the second module form a cavity. The first connecting module has a width of 1-300 μm on a first section. The first connecting module is made of a first material, a second material, or the first material and the second material. The first material is the material of the first module, and the second material is the material of the second module. The first material or the second material is a transparent material for a target laser. The projection of the first connecting module on the first plane of the first module is a closed curve. Since the projection of the first connecting module on the first plane of the first module is a closed curve, the cavity can be completely sealed. In combination with the characteristic that the first connecting module is at least one of the first module and the second module, the sealing of the cavity of the optoelectronic device can be effectively ensured.

Description

Technical Field

[0001] This application relates to the field of optical technology, and in particular to an optoelectronic device and related modules and apparatus. Background Technology

[0002] With the continuous development and advancement of technology, the application scenarios of optoelectronic devices are constantly expanding, such as optoelectronic devices in water immersion scenarios or high-temperature scenarios. Common optoelectronic device packaging technologies include direct metal casing soldering, metal solder brazing, glass solder brazing, or adhesive encapsulation. However, because solder volatilizes during heating, it can contaminate surrounding devices. The high temperature of direct metal casing soldering can have a thermal impact on surrounding devices, while adhesive encapsulation not only has difficulty effectively isolating moisture but also suffers from rapid aging.

[0003] To address these issues, laser welding has emerged as a method. Traditional laser welding can eliminate the adverse effects of adhesives and brazing fillers on optoelectronic devices, and the welded devices possess high-temperature resistance. However, traditional laser welding produces welds with noticeable cracks, affecting not only the appearance but also resulting in poor airtightness in the optoelectronic devices. Summary of the Invention

[0004] This application provides an optoelectronic device and related modules and apparatus for improving the sealing performance of the optoelectronic device.

[0005] In a first aspect, this application provides an optoelectronic device, including a first module, a second module, and a first connection module. The first connection module is used to connect the first plane of the first module and the first plane of the second module, so that the first module and the second module form a cavity. The cross-sectional width of the first connection module in a first direction is 1 to 300 μm. The material of the first connection module is a first material, a second material, or a hybrid material of the first material and the second material. The first material is the material of the first module, the second material is the material of the second module, and the first material or the second material is a transparent material of the target laser. The projection of the first connection module on the first plane of the first module is a closed curve.

[0006] In this embodiment, since the material of the first connecting module is the material of the first module, the material of the second module, or a mixture of the materials of the first module and the second module, there is no need to introduce other materials for connection, thus avoiding contamination of the components in the cavity. At the same time, the projection of the first connecting module on the first plane of the first module is a closed curve, which can ensure that the cavity is completely sealed. Combined with the characteristic that the first connecting module is formed by melting at least one of the first module or the second module, the sealing performance of the cavity of the optoelectronic device can be effectively guaranteed.

[0007] In one possible implementation of the first aspect, when the first material includes a transparent material of the target laser, the first connecting module is formed by melting a first region of the first module under the irradiation of the target laser, or the first connecting module is formed by melting a first region of the first module and a first region of the second module under the irradiation of the target laser, or the first connecting module is formed by melting a first region of the second module under the irradiation of the target laser, wherein the first region of the first module is on a first plane of the first module, and the first region of the second module is on a first plane of the second module.

[0008] In this embodiment, when the first material is a transparent material of the target laser, during the fabrication of the first connecting module, the target laser irradiates the first region of the first module and the first region of the second module through the first module, causing at least one region of the first region of the first module and the first region of the second module to melt and form an interface connection, providing sealing conditions for the optoelectronic device. The sealing performance and sealing conditions mentioned in this application include both the airtightness and watertightness of the cavity.

[0009] In one possible implementation of the first aspect, the distance between the first plane of the first module and the first plane of the second module is less than a first threshold.

[0010] In this embodiment, by limiting the distance between the first plane of the first module and the first plane of the second module to less than a first threshold, optical contact between the first plane of the first module and the first plane of the second module can be ensured. The target laser can pass through the first module and irradiate the molten pool formed by the first plane of the second module, which can further provide a connection between the first module and the second module. After the first plane of the first module is connected to the first plane of the second module through the first connecting module, the first module and the second module together form a cavity. This effectively ensures the airtightness of the cavity.

[0011] In one possible implementation of the first aspect, the height of the first connecting module on the first plane is 10 to 800 μm.

[0012] In one possible implementation of the first aspect, when the first module is a transparent material for the target laser, the first connecting module includes a modified region of the first module.

[0013] In this embodiment of the application, when the first module is made of a transparent material for the target laser, in an ideal state, the first connecting module includes a modified area of ​​the first module. The material of the first connecting module is the same as that of the first module, which reduces the impact of the first connecting module on the appearance of the optoelectronic device, effectively improves the aesthetics of the optoelectronic device, and the improvement of the sealing performance of the optoelectronic device by the first connecting module does not require the use of additional materials, thus reducing the risk of secondary contamination of the components in the optoelectronic device.

[0014] In one possible implementation of the first aspect, when the second module is a transparent material of the target laser, the first connecting module includes a modified region of the second module.

[0015] In this embodiment of the application, when the second module is made of a transparent material for the target laser, the first connecting module further includes a modified region of the second module. By modifying the material of the first module and / or the second module, the cavity composed of the first module and the second module has superior sealing performance when the first connecting module connects the first module and the second module.

[0016] In one possible implementation of the first aspect, the first connection module further includes at least one of a first re-fusion area or a second re-fusion area, wherein the first re-fusion area is a re-fusion area of ​​the first module and the second re-fusion area is a re-fusion area of ​​the second module.

[0017] In this embodiment, when the target laser irradiates the first module or the second module, a remelting zone with a loose and porous structure may also be generated. Since the remelting zone is a loose and porous structure generated when the target laser irradiates the first module or the second module but fails to achieve the target conditions, experimental results show that the remelting zone, as the main component of the first connecting module, can effectively improve the sealing performance of the cavity composed of the first module and the second module when connecting the first module and the second module. This can effectively reduce the requirements of the preparation environment for the solution provided in this application and improve the feasibility of the solution.

[0018] In one possible implementation of the first aspect, the width of the first remelting region on the first plane, or the width of the second remelting region on the first plane, is 0.5 to 30 μm, and the height of the first remelting region on the first plane, or the height of the second remelting region on the first plane, is 5 to 400 μm.

[0019] In one possible implementation of the first aspect, when the first material is a transparent material of the target laser and the second material is a non-transparent material of the target laser, the height of the first connecting module in the first cross-section includes a first height and a second height. The first height is the maximum dimension in the first cross-section along the second direction from the baseline, and the second length is the maximum dimension in the first cross-section along the third direction from the baseline. The second direction and the third direction are opposite to each other, the second direction is perpendicular to the baseline, and the second direction points to the direction of the first module. The distance from the baseline to the first plane of the first module is the same as the distance from the baseline to the first plane of the second module.

[0020] Among them, the transmittance of the target laser in the first material is greater than 90%, the first height is within the first interval size, the second height is 1~50μm, and the first height is greater than the second height.

[0021] In this embodiment, two modules of different materials are connected to obtain an optoelectronic device. The first material is a transparent material for the target laser, and the second material is an opaque material for the target laser. This helps to make the optoelectronic device provided in this application applicable to more application scenarios.

[0022] In one possible implementation of the first aspect, the first module includes a cover-like structure, and the second module includes a substrate. For example, in a temperature-sensitive device, the cover-like structure and the substrate are connected by a first connecting module to form a cuboid cavity; in a TO-packaged optoelectronic device, the cover-like structure and the substrate are connected by a first connecting module to form a cylindrical cavity.

[0023] In this embodiment, by connecting the cover structure and the substrate, the sealing performance of optoelectronic devices can be improved simply and efficiently without additional design modifications, based on currently commonly used structures.

[0024] In one possible implementation of the first aspect, the dome structure is a glass dome and the substrate includes a substrate that is opaque to the target laser, or the dome structure is a glass cap and the substrate includes a metal substrate.

[0025] This application provides methods for setting up the cover-like structure in different scenarios, making the solution provided by this application applicable to more usage scenarios.

[0026] In one possible implementation of the first aspect, the optoelectronic device further includes a third module and a second connection module;

[0027] The second plane of the second module is connected to the first plane of the third module through the second connecting module. The projection of the second connecting module on the first plane of the first module is a closed curve. The first module, the second module, the third module, the first connecting module and the second connecting module form a cavity. The second module or the third module is made of transparent material for the target laser.

[0028] In this application embodiment, it is proposed that the optoelectronic device can be composed of multiple modules, and the solution provided in this application is applicable to diverse scenarios.

[0029] In one possible implementation of the first aspect, both the first module and the third module are substrates, and the second module is a tubular structure.

[0030] In one possible implementation of the first aspect, the transparent material of the target laser includes glass, and the opaque material includes ceramic or metal. For example, when the target laser is a visible or near-infrared laser, the transparent material can be glass, and the opaque material can be ceramic or metal. When the target laser has a wavelength greater than 1350 nm, the transparent material can also be silicon.

[0031] In this application embodiment, the transparent material of the target laser commonly used in optoelectronic components includes glass, and the opaque material of the target laser includes ceramic or metal. In combination with the specific application scenario, the module material that meets the usage requirements of optoelectronic devices can be determined based on these materials.

[0032] In one possible implementation of the first aspect, when the first material and the second material are different, the ratio of the first transmittance to the second transmittance is 0.1 to 0.95, where the first transmittance is the transmittance of the target laser passing through the first connecting module, and the second transmittance is the transmittance of the target laser passing through the first module.

[0033] In this embodiment, when the first material and the second material are different, and the first material is a transparent material for the target laser, the ratio of the first transmittance to the second transmittance is 0.1 to 0.95. The first transmittance is the transmittance of the target laser through the first connecting module, and the second transmittance is the transmittance of the target laser through the first module. This ratio is comparable to the transmittance of the first material, effectively reducing the impact on the device's appearance.

[0034] Secondly, this application provides an optical module, which includes the optoelectronic devices described in the first aspect and any possible implementation thereof.

[0035] Thirdly, this application provides an optical communication device, which includes an optical module comprising the second aspect and any possible implementation thereof.

[0036] Fourthly, this application provides an optical communication system, which includes an optical communication device according to the third aspect and any possible implementation thereof.

[0037] Fifthly, this application provides an atomic clock, which includes the optoelectronic device of the first aspect and any possible implementation thereof.

[0038] In a sixth aspect, this application provides a gas sensor, which includes the optoelectronic device of the first aspect and any possible implementation thereof.

[0039] The beneficial effects shown in any of the second to sixth aspects are similar to those of the first aspect or any possible implementation of the first aspect, and will not be repeated here. Attached Figure Description

[0040] Figure 1 A schematic diagram of the structure of the optoelectronic device provided in this application;

[0041] Figure 2A schematic diagram of a first cross-section of the optoelectronic device provided in this application;

[0042] Figure 3 Another structural schematic diagram of the optoelectronic device provided in this application;

[0043] Figure 4 Another structural schematic diagram of the optoelectronic device provided in this application;

[0044] Figure 5 A schematic diagram of the structure of the first connection module provided in this application;

[0045] Figure 6 Another structural schematic diagram of the optoelectronic device provided in this application;

[0046] Figure 7 Another structural schematic diagram of the optoelectronic device provided in this application;

[0047] Figure 8 Another structural schematic diagram of the first connection module provided in this application;

[0048] Figure 9 Another structural schematic diagram of the optoelectronic device provided in this application;

[0049] Figure 10 A schematic diagram illustrating the growth of plasma provided in this application;

[0050] Figure 11 Another structural schematic diagram of the optoelectronic device provided in this application;

[0051] Figure 12 Another structural schematic diagram of the optoelectronic device provided in this application;

[0052] Figure 13 Another structural schematic diagram of the first connection module provided in this application;

[0053] Figure 14 Another structural schematic diagram of the first connection module provided in this application;

[0054] Figure 15 Another structural schematic diagram of the first connection module provided in this application;

[0055] Figure 16 Another structural schematic diagram of the first connection module provided in this application. Detailed Implementation

[0056] This application provides an optoelectronic device and its fabrication process to improve the sealing performance of the optoelectronic device.

[0057] The embodiments of this application will now be described with reference to the accompanying drawings. Those skilled in the art will recognize that, with technological advancements and the emergence of new scenarios, the technical solutions provided in the embodiments of this application are equally applicable to similar technical problems.

[0058] The terms "first," "second," etc., used in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such terms are interchangeable where appropriate; this is merely a way of distinguishing objects with the same attributes in the embodiments of this application. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion, so that a process, method, system, product, or apparatus that comprises a series of units is not necessarily limited to those units, but may include other units not explicitly listed or inherent to those processes, methods, products, or apparatuses. Additionally, "at least one" means one or more, and "more than one" means two or more. "And / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, or B alone, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, at least one of a, b, or c can be expressed as: a, b, c, ab, ac, bc, or abc, where a, b, and c can be single or multiple.

[0059] With the continuous development and advancement of technology, the application scenarios of optoelectronic devices are constantly expanding, such as optoelectronic devices in water immersion scenarios or high-temperature scenarios. Common optoelectronic device packaging technologies include direct metal casing soldering, metal solder brazing, glass solder brazing, or adhesive encapsulation. However, because solder volatilizes during heating, it can contaminate surrounding devices. The high temperature of direct metal casing soldering can have a thermal impact on surrounding devices, while adhesive encapsulation not only has difficulty effectively isolating moisture but also suffers from rapid aging.

[0060] To address these issues, laser welding has emerged as a method that eliminates the adverse effects of adhesives and brazing fillers on optoelectronic devices. Furthermore, laser-welded optoelectronic devices possess high-temperature resistance. However, the weld seams produced by laser welding exhibit noticeable cracks, affecting not only the appearance but also resulting in poor sealing of the device.

[0061] To address the above issues, this application proposes using a first connecting module to connect the first plane of a first module and the first plane of a second module, forming a cavity. The first connecting module has a cross-sectional width of 1–300 μm in the first direction. The first connecting module is made of a first material, a second material, or a mixture of the first and second materials. The first material is the material of the first module, and the second material is the material of the second module. The first material or the first material itself is transparent to the target laser. The projection of the first connecting module onto the first plane of the first module is a closed curve. Since the first connecting module is made of the material of the first module, the material of the second module, or a mixture of the first and second materials, no other materials need to be introduced for connection, avoiding contamination of the components within the cavity. Furthermore, the closed curve projection of the first connecting module onto the first plane of the first module ensures complete sealing of the cavity. Combined with the characteristics of the first connecting module, the sealing performance of the optoelectronic device cavity can be effectively guaranteed.

[0062] The optoelectronic devices provided in this application will be described below with reference to the accompanying drawings.

[0063] Please see Figure 1 , Figure 1 This is a schematic diagram of the structure of an optoelectronic device provided in this application.

[0064] like Figure 1 As shown in Figure a, the optoelectronic device 100 includes: a first module 110, a second module 120, and a first connection module 130 (not shown due to obstruction).

[0065] The first plane of the first module 110 is connected to the first plane of the second module 120 via the first connecting module 130 to form a cavity. Figure 1 As shown in Figure b, the width W of the first connecting module 130 in the first cross-section is 1-300 μm, and the first cross-section is the cross-section of the optoelectronic device 100 in the first direction. The material of the first connecting module 130 is a first material, or a second material, or both a first material and a second material. The first material is the material of the first module 110, and the second material is the material of the second module 120. At least one of the first material or the second material is a transparent material for the target laser. Figure 1 As shown in Figure c, the projection of the first connecting module 130 onto the first plane of the first module 110 is a closed curve. That is, the first plane of the first module 110 is the plane in the first module 110 that is parallel to and closest to the first plane of the second module 120.

[0066] It should be understood that Figure 1The shapes of the first module 110 and the second module 120 are only shown as examples. In actual applications, they should be set according to the specific application scenario. No restrictions are imposed here.

[0067] Optionally, the target laser can be a near-infrared laser or a green light laser, and the pulse width of the target laser can be less than 10nm. There are no restrictions here.

[0068] Optionally, in order to ensure the sealing of the connection between the first module 110 and the second module 120, the energy density of the target laser at the junction of the first module 110 and the second module 120 should be greater than the ablation threshold of the first module 110, and the energy density of the target laser at the junction of the first module 110 and the second module 120 should also be greater than the ablation threshold of the second module 120.

[0069] In this embodiment, since the first connecting module is made of the same material as the first module, the second module, or a mixture of the first and second module materials, no other materials need to be introduced for connection, thus avoiding contamination of the components in the cavity. Simultaneously, the projection of the first connecting module onto the first plane of the first module is a closed curve, ensuring complete sealing of the cavity. Combined with the characteristics of the first connecting module, the sealing performance of the optoelectronic device's cavity can be effectively guaranteed. The description of the sealing performance of the optoelectronic device's cavity in this application includes both the water tightness and the air tightness of the optoelectronic device's cavity.

[0070] In one possible implementation, when the first material is a transparent material of the target laser, the first connecting module 130 is formed by the target laser passing through the first module 110 and irradiating the first region 111 of the first module and the first region 121 of the second module, causing at least one of the first regions 111 and 121 of the first module to melt. The first region 111 of the first module is on the first plane of the first module 110, and the first region 121 of the second module is on the first plane of the second module. For example, when the second material is also a transparent material of the target laser, the target laser is focused on the first region 111 of the first module and the first region 121 of the second module to form a micro-melt pool (this micro-melt pool can be formed by melting the first region 111 of the first module, or by melting and fusing the first region 111 of the first module and the first region 121 of the second module). An ultrafast laser beam is moved to scan along the first region 111 of the first module to form a continuous closed weld (first connecting module 130), thereby realizing the connection between the first module 110 and the second module 120. Where both the first module 110 and the second module 120 are made of transparent materials to the target laser, when the target laser irradiates the interface between the first module 110 and the second module 120, the material with the lower melting point will melt preferentially. Therefore, the first connecting module 130 can be formed by the melting of the first area of ​​the first module 110 under the irradiation of the target laser, or the first connecting module 130 can be formed by the melting of the first area of ​​the first module 110 and the first area of ​​the second module 120 under the irradiation of the target laser, or the first connecting module 130 can be formed by the melting of the first area of ​​the second module 120 under the irradiation of the target laser. No restrictions are imposed here.

[0071] In this embodiment of the application, when the first material is a transparent material of the target laser, during the preparation process of the first connecting module, the target laser irradiates the first region of the first module and the first region of the second module through the first module, causing at least one region of the first region of the first module and the first region of the second module to melt, thus providing the conditions for the preparation of optoelectronic devices.

[0072] Since the first module 110 and the second module 120 in the solution provided in this application form a cavity after being connected by the first connecting module 130, it is necessary to ensure optical contact between the first module and the second module. This application proposes that, in such a way... Figure 1 In the scenario shown, the distance between the first plane of the first module 110 and the first plane of the second module 120 is less than a first threshold, which can be equal to... Where λ is the wavelength of the target laser. In this case, by limiting the distance between the first plane of the first module and the first plane of the second module to less than a first threshold, optical contact between the first plane of the first module and the first plane of the second module can be ensured. The target laser can pass through the first module and irradiate the molten pool formed by the first plane of the second module, which can further provide a connection between the first module and the second module. After the first plane of the first module is connected to the first plane of the second module through the first connecting module, the first module and the second module together form a cavity. This effectively ensures the airtightness of the cavity.

[0073] In one possible implementation, the first connection module 130 may include a plurality of connection modules that are projected as closed curves on the first plane of the first module 110, without limitation.

[0074] Optional, such as Figure 1 As shown in Figure b, the shape of the connecting module in the first cross-section can be "teardrop-shaped", and there is no restriction here.

[0075] Optionally, the height of the first connection module 110 on the first cross-section is 10 to 800 μm, and no limit is imposed here.

[0076] When the first material is transparent to the target laser, the second material can also be opaque to the target laser. In this case, the target laser shines through the first material onto the interface between the first module 110 and the second module 120. Because the melting rate of the first material under the target laser's irradiation is different from that of the second material, the sizes of the micro-melt pools generated in the first and second modules will be different. Therefore, the height of the first connecting module on the first cross-section includes both a first height and a second height. Figure 2 As shown, the height of the first connecting module 130 in the first cross-section includes a first height H1 and a second height H2. The first height H1 is the maximum dimension along the second direction from the baseline in the first cross-section, and the second height H2 is the maximum dimension along the third direction from the baseline in the first cross-section. The second direction and the third direction are opposite to each other, the second direction is perpendicular to the baseline, and the second direction points towards the first module 110. The distance from the baseline to the first plane of the first module is the same as the distance from the baseline to the first plane of the second module. The first height is within a first range of dimensions, and the second height is 1 to 50 μm. The first range of dimensions includes... Depend on Figure 2 It can be seen that the shape of the first connecting module 130 on the first cross-section can be irregular, and there is no restriction here.

[0077] Optionally, the target laser has a light transmittance of more than 90% in the first material; this is not a limitation.

[0078] The solution provided in this application has different structures in different application scenarios. The solution provided in this application will be introduced below in combination with specific application scenarios.

[0079] When the optoelectronic device is a quantum product such as an atomic clock, quantum sensor or atomic antenna, the cavity formed by connecting the first plane of the first module with the first plane of the second module through the first connecting module can be an atomic chamber.

[0080] When the optoelectronic device includes an alkali metal atom gas cell, the structure of the optoelectronic device can be the same as described above. Figure 1 If any one of the multiple illustrations is similar, the specific composition of the optoelectronic device can also be as follows: Figure 3 As shown, for example, Figure 3 As shown in Figure a, both the first module 110 and the second module 120 can be sealed covers, or as shown in Figure a. Figure 3 As shown in Figure b, the first module 110 can be a substrate, and the second module 120 can be a sealing cover, or as shown in Figure b. Figure 3 As shown in Figure c, the first module 110 can be a sealing cover, and the second module 120 can be a substrate, or as... Figure 3 As shown in Figure d, the first module 110 and the second module 120 can both be the shape shown in Figure d, or any other two modules that can form a cavity, without any restrictions here.

[0081] In one possible implementation, the optoelectronic device may further include multiple modules; for example, the structure of the optoelectronic device may also be as follows: Figure 4 As shown, the optoelectronic device 400 includes a first module 410, a second module 420, a third module 430, a first connection module 440, and a second connection module 450.

[0082] Both the first module 410 and the third module 430 are substrates, and the material of the first module 410 is a transparent material for the target laser. The first plane of the first module 410 is connected to the first plane of the second module 420 through the first connecting module 440.

[0083] The second module 420 is a structure obtained by punching holes along the axis of a cylinder, or a structure obtained by punching holes in any plane of a cuboid, or a polygonal shell structure, or a free-form surface shell structure. The second plane of the second module 420 is connected to the first plane of the third module 430 through the second connecting module 450. The projection of the second connecting module 450 onto the first plane of the first module 410 is a closed curve. For example,

[0084] The cavity is composed of the first module 410, the second module 420, the third module 430, the first connecting module 440, and the second connecting module 450.

[0085] It should be understood that the description of the shape of the second module 420 here is only an example. In practical applications, the second module 420 can also be any similar hollow through-structure, and there are no restrictions here.

[0086] The first module 410 and the third module 430 can be made of transparent or opaque material of the target laser. The materials of the first module 410 and the third module 430 can be the same or different, and there are no restrictions here.

[0087] Optionally, the material of the second module 420 can be fused silica, BF33 or K9L glass, etc., without restriction.

[0088] The materials of the first module 410 and the third module 430 can be glass materials such as fused silica, BF33 or K9L, ceramic materials such as silicon, aluminum nitride, aluminum oxide or zirconium oxide, or metal materials; there are no restrictions here.

[0089] As can be seen from the above, the optoelectronic device provided in this application may also include three modules, that is, the optoelectronic device may include at least two modules, and the specific number of modules in the optoelectronic device is not limited here.

[0090] Optionally, the projections of the first connecting module 440 onto the first plane of the first module 410 and the second connecting module 450 onto the first plane of the first module 410 can both be closed curves of various types, such as circles, rectangles, or triangles. Furthermore, the projections of the first connecting module 440 onto the first plane of the first module 410 and the second connecting module 450 onto the first plane of the first module 410 can be of the same closed curve type or different closed curve types; no limitation is imposed here.

[0091] Optionally, the width of the first connecting module 440 in the first cross-section is 1 to 300 μm, and the width of the second connecting module 450 in the first cross-section is 1 to 300 μm.

[0092] In one possible implementation, when the first module 410, the second module 420, and the third module 430 are all made of a transparent material for the target laser, such as when the first module 410, the second module 420, and the third module 430 are all made of glass, the shape of the first connecting module 440 in the first cross-section is as follows: Figure 5 As shown, the width of the first connecting module 440 in the first cross-section is as follows: Figure 5 As shown in the diagram, the shape of the second connecting module 450 in the first cross-section is similar to that of the first connecting module 440. Figure 5 The shapes are similar, so we will not go into detail here.

[0093] Specifically, the maximum width of the first connecting module 440 in the first cross-section is approximately equal to the diameter of the focused spot of the target laser on the first plane of the first module 410. The maximum length of the first connecting module 440 in the first cross-section is related to the maximum width of the first connecting module 440 in the first cross-section. For example, if the maximum width of the first connecting module 440 in the first cross-section is W, and the maximum length of the first connecting module 440 in the first cross-section is H, then the relationship between W and H follows Formula 1.

[0094] Formula 1:

[0095] Where W is the maximum width of the first connecting module 440 in the first cross-section, and λ is the wavelength of the target laser.

[0096] In one possible implementation, Figure 3 The first connection module 440 shown can be multiple closed curves, and the second connection module 450 can also be multiple closed curves; there is no restriction here.

[0097] Based on the foregoing Figure 1 In one possible embodiment, the cross-sectional view (view in the first section) of the optoelectronic device shown may also be as follows: Figure 6 As shown, the optoelectronic device 600 includes a first module 610, a second module 620, a third module 630, a first connection module 640, a second connection module 650, and a third connection module 660.

[0098] The first plane of the first module 610 is connected to the first plane of the second module 620 through the first connecting module 640, and the first plane of the first module 610 is also connected to the second plane of the third module 630 through the third connecting module 660.

[0099] The second module 620 and the third module 630 form a sealing cover, and the second plane of the second module 620 is connected to the first plane of the third module 630 through the second connecting module 650. The first module 610, the second module 620, the third module 630, the first connecting module 640, the second connecting module 650 and the third connecting module 660 form a cavity.

[0100] The material of the first module 610 is the transparent material of the target laser, and at least one of the second module 620 or the third module 630 is made of the transparent material of the target laser.

[0101] The first module 610 can be a substrate, the second module 620 can be a cuboid, and the third module 630 can have an L-shaped cross-section. The second module 620 can be made of fused silica, BF33, or K9L glass, etc. The first module 610 can be made of fused silica, BF33, or K9L glass, or ceramic materials such as silicon, aluminum nitride, alumina, or zirconium oxide, or metal; there are no restrictions on its material.

[0102] Optionally, the material of the third module 630 can be glass such as fused silica, BF33 or K9L, ceramic such as silicon, aluminum nitride, alumina or zirconium oxide, or metal; there are no restrictions here.

[0103] It should be understood that the description of the shapes of the first module, second module, third module, first connecting module and second connecting module and the connection relationship between the modules in the case of optoelectronic devices including alkali metal atom gas cells is only an example. In actual applications, the settings should be combined with the specific application scenario, and no restrictions are imposed here.

[0104] When an optoelectronic device contains a temperature-sensitive element, the encapsulation temperature needs to be below 120°C to ensure the effectiveness of the temperature-sensitive element. Conventional dispensing-curing methods are insufficient to prevent moisture from entering the optoelectronic device, and the adhesive poses a risk of contaminating the internal and external components after aging and evaporation. Therefore, the optoelectronic device provided in this application can also be an optoelectronic device with an internal temperature-sensitive element.

[0105] In one possible implementation, since in most cases where a temperature-sensitive element is incorporated, the material of the second module in the optoelectronic device (the second material) is an opaque material, such as a ceramic material like silicon, aluminum nitride, aluminum oxide, or zirconium oxide, or a metallic material.

[0106] like Figure 7 As shown, based on Figure 1 The optoelectronic device shown illustrates the case where the first material is transparent and the second material is opaque.

[0107] The optoelectronic device 700 includes a first module 710, a second module 720, and a first connection module 730 (not shown due to obstruction). The first plane of the first module 710 is connected to the first plane of the second module 720 via the first connection module 730, forming a cavity. The width W of the first connection module 730 in its first cross-section is 1–300 μm, and this first cross-section is the cross-section of the optoelectronic device 700 in a first direction. The first connection module 730 is made of a mixture of a first material and a second material; the first material is the same as the material of the first module 710, and the second material is the same as the material of the second module 720. The first material is transparent to the target laser, and the second material is opaque to the target laser.

[0108] The length of the first connecting module 730 in the first cross-section includes a first height H1 and a second height H2. The first height is the maximum dimension along a second direction originating from the baseline in the first cross-section, and the second length is the maximum dimension along a third direction originating from the baseline in the first cross-section. The second direction and the third direction are opposite to each other, the second direction is perpendicular to the baseline, and points towards the first module 710. The distance from the baseline to the first plane of the first module is the same as the distance from the baseline to the first plane of the second module. The first height is within a first range of dimensions, and the second height is 2–10 μm. The first range of dimensions includes…

[0109] In one possible implementation, Figure 7 In the optoelectronic device 700 shown, if the first module 710 is made of silicon dioxide and the second module 720 is made of copper, the first connection module 730 can have the following shape in the first cross-section: Figure 8 As shown, the first height is greater than the second height, and the first connecting module 730 is teardrop-shaped. The connection of the first connecting module 730 between the first module 710 and the second module 720 is as follows: Figure 8 In the case shown, the sealing helium leakage rate of the optoelectronic device is less than 5.0 eE. - 9 Pa·m 3 The welding strength is greater than 20 MPa, and it fails after 500 cycles in a temperature cycling test ranging from -40°C to 150°C. Furthermore, when the first connection module 730 is fabricated at room temperature, the heat-affected zone of the fabrication is less than 100 μm. In other words, the optoelectronic device 700 provided in this application can fully meet the usage requirements in immersion, high-temperature, and low-temperature environments.

[0110] In optoelectronic devices, a common packaging method is TO packaging. Glass TO caps need to be used in combination with a substrate to encapsulate optoelectronic components in optoelectronic devices.

[0111] In one possible implementation, as described above Figure 1 Based on this, the optoelectronic device provided in this application can also be a TO-packaged optoelectronic device, such as... Figure 9 As shown, the optoelectronic device 900 includes a first module 910, a second module 920, and a first connection module 930. The width of the first connection module 930 in a first cross-section is 1–300 μm. The first cross-section is the cross-section of the optoelectronic device 900 in a first direction. The material of the first connection module 930 is a first material, a second material, or a mixture of the second and first materials (also referred to as a third material). The first module 910 can be a glass cap, and the second module 920 can be a metal base. Figure 9 As shown, the metal base can be a cylinder (shaped like...) Figure 9 As shown in Figure 920, the first connection module 930 may include three non-connected annular connection modules.

[0112] because Figure 9 In the photoelectric device 900 shown, the first module 910 is a glass cap, the glass material being transparent to the target laser; the second module 920 is a metal base, the metal material being opaque to the target laser. Therefore... Figure 9 The first connection module 930 in the first cross-section of the optoelectronic device 900 shown is similar to the aforementioned Figure 8 The shapes shown are similar.

[0113] It should be understood that, since the formation of the first connecting module 930 is based on the heating, melting and fusion of the first module 910 and the second module 920 by the target laser during the specific processing, the specific size of the first connecting module 930 is affected by the irradiation time of the target laser during the processing. In the specific implementation process, there may be some deviation from the size provided in this application, which is not limited here.

[0114] Figure 9 In the scenario shown, the TO packaging method provided in this application can effectively reduce the processing difficulty, and compared with the currently common dispensing packaging, the packaging process reduces the service risk (the risk of leakage of packaging material and contamination of lens), and can also effectively improve the production yield of TO packaged optoelectronic devices.

[0115] In the case of optoelectronic devices that are liquid crystal on silicon (LCOS) devices, the internal liquid crystal is typically sealed using ring-shaped dispensing. However, in high-temperature, high-humidity, and high-luminous-flux applications, moisture ingress into the internal liquid crystal occurs. Based on these issues, this application proposes that the optoelectronic device provided herein can also be applied to LCOS device applications.

[0116] In this scenario, the structure of the optoelectronic device can be as described above. Figures 1 to 9 As shown. Because inter-glass ribbon welding can have different plasma shapes and sizes, such as... Figure 10 As shown. Figure 10 It can be clearly seen that plasma in glass can grow within a certain range along the first direction, and its specific growth height is limited by the size of the glass material. For example, the thickness of the glass material at the target laser irradiation point.

[0117] Therefore, when the first module in an optoelectronic device is made of glass, the characteristic that glass plasma can grow within a certain range along a first direction can be fully utilized. A target laser can be used to heat and melt the first module in the optoelectronic device, causing it to grow to connect with the second module. The portion grown from the first module is called the first connecting module. That is, the material of the first connecting module is the same as that of the first module. The material of the first module can be the same as or different from that of the second module; there are no restrictions here. For example, the first module can be made of glass or sapphire, and the second module can also be made of glass; or, the first module can be made of glass or sapphire, and the second module can be made of ceramic; or, the first module can be made of glass or sapphire, and the second module can be made of metal.

[0118] It should be understood that the description here is only an example. In specific application scenarios, the first and second modules here can be interchanged, and there are no restrictions here.

[0119] In one possible implementation, the optoelectronic device mentioned in this application is an LCOS device, and the first module in the optoelectronic device is made of glass. Based on the foregoing Figure 10 The plasma growth characteristics of the glass material shown can be used in optoelectronic devices such as... Figure 11As shown, the optoelectronic device 1100 includes a first module 1110, a second module 1120, and a first connection module 1130. The first module 1110 and the second module 1120 can be substrates, and the first module 1110 is made of a transparent material suitable for the target laser. The first connection module 1130 has a width of 1–300 μm in a first cross-section, which is the cross-section of the optoelectronic device 1100 in a first direction. The material of the first connection module 1130 is a first material, which is the same as the material of the first module 1110. Furthermore, the projection of the first connection module 1130 onto the first plane of the first module 1110 is a closed curve.

[0120] Here Figure 11 In the description, the first connecting module 1130 is used to irradiate any point in the first region of the first module 1110 through the target laser. After each irradiation, the light spot projected by the target laser onto the first module 1110 moves within the first region of the first module 1110. After each movement, the light spot projected by the target laser onto the first module 1110 overlaps with the already present first connecting module 1130. The first region of the first module 1110 is on the first plane of the first module.

[0121] Optionally, the height of the first connecting module 1130 on the first cross-section is equal to the distance between the first plane of the first module 1110 and the first plane of the second module 1120. The height H of the first connecting module 1130 on the first cross-section is the maximum size of the first connecting module 1130 along a third direction originating from the baseline in the first cross-section. The baseline is the line corresponding to the first plane of the first module 1110 in the first cross-section, and the third direction is perpendicular to the baseline (i.e., perpendicular to the first plane of the first module 1110), and the third direction is the direction from the baseline to the second module 1120 in the first cross-section. In other words, the first connecting module 1130 is formed by melting the first module 1110 (the melted area of ​​the first module 1110) and overlapping the second module 1120.

[0122] Optionally, the first module 1110 may include a first anti-refletance (AR) layer 1111, a first glass layer 1112, and a second AR layer 1113, with the first glass layer 1112 disposed between the first AR layer 1111 and the second AR layer 1113. The second module 1120 may include a silicon nitride layer 1121 and a substrate layer 1122.

[0123] Optionally, in the first cross-section, the distance between the first edge of the first connecting module 1130 and the first edge of the second module 1120 is the edge distance, which is greater than 0.1 mm and less than 0.2 mm. That is, a gap needs to be left between the edges of the first connecting module 1130 and the second module 1120. This gap ensures that the first connecting module 1130 and the second module 1120 are connected on a plane, avoiding the situation where there are two planes in the connection between the first connecting module 1130 and the second module 1120, effectively ensuring the sealing performance of the optoelectronic device 1100 provided in this application.

[0124] Optionally, the thickness of the first glass layer 1112 can be 1.1 mm, and a circuit layer 1123 can also be provided between the silicon nitride layer 1121 and the substrate layer 1122, which is not limited here.

[0125] For example, in specific application scenarios, Figure 11 The first connection module 1130 in the photoelectric module 1100 shown contains multiple connection modules. A top view of the photoelectric module 1100 without the first connection module 1130 is shown below. Figure 12 As shown in Figure a, the top view of the photoelectric module 1100 after the addition of the first connection module 1130 is as follows. Figure 11 As shown in Figure b. (From...) Figure 12 As can be clearly seen in Figure b, the first connecting module 1130 can be composed of multiple connecting modules, wherein the multiple connecting modules have the same shape and are arranged sequentially along similar trajectories. When the first connecting module 1130 includes multiple connecting modules, in order to avoid mutual interference between adjacent connecting modules, the interval between two adjacent connecting modules is greater than or equal to W, but no restriction is imposed here.

[0126] The above describes the possible structures of the optoelectronic device proposed in this application. Different operations can affect the fabrication of the first connection module in the optoelectronic device; therefore, the first connection module can be composed of different materials. The following describes different scenarios for the first connection module.

[0127] First, in conjunction with the above Figure 1 The following explanation addresses the case where both the first module 110 and the second module 120 are made of transparent material used for the target laser. Figure 13As shown, both the first module 110 and the second module 120 are irradiated by the target laser, altering the properties of the irradiated area and resulting in modified regions 111 and 121 of the first and second modules, respectively. In other words, the first connecting module 130 includes either the modified region 111 of the first module or the modified region 121 of the second module. The modified region 111 of the first module is connected to the modified region 121 of the second module, achieving a sealed connection between the first module 110 and the second module 120 through intermolecular interactions. This eliminates the need to introduce new materials to connect the first and second modules, reducing the risk of secondary contamination and effectively improving the sealing performance of the chamber formed by the first and second modules.

[0128] The modified area 111 of the first module and the modified area 121 of the second module are semi-circular arcs. The height of the first connecting module 130 on the first plane is the total height of the modified area 111 of the first module and the modified area 121 of the second module on the first plane, which is not limited here.

[0129] It should be understood that the description of the modified area 111 of the first module and the modified area 121 of the second module here is only illustrative. In specific application scenarios, the shapes of the modified area 111 of the first module and the modified area 121 of the second module should be set according to the specific application scenario, and no restrictions are imposed here.

[0130] Optionally, the modified region 111 of the first module is teardrop-shaped or ellipsoidal, as described above. Figure 1 , Figures 3 to 12 The first connecting module 130 is a modified region of the module (first module and / or second module), specifically the modified region 111 of the first module and / or the modified region 121 of the second module. In this case, the width of the first connecting module 130 on the first cross-section is 1–300 μm, and the height of the first connecting module 130 on the first plane is 6–500 μm.

[0131] Figure 13 The first connecting module 130 shown represents the modified region obtained by irradiating the first module 110 and the second module 120 with a target laser under ideal conditions. In actual processing, it fully achieves... Figure 13 The processing effect shown is difficult to achieve. In a conventional processing scenario, the first connection module 130 may include a modified area 111 of the first module, a modified area 121 of the second module, a remelting area 112 of the first module, and a remelting area 122 of the second module.

[0132] It should be understood that in common scenarios, when the target laser irradiates the first module 110 and the second module 120, it will not only create the modified region 111 of the first module and the modified region 121 of the second module, but also create a first remelting region 112 or a second remelting region 122. The first remelting region 112 is the remelting region of the first module, and the second remelting region is the remelting region of the second module. Specifically, the first remelting region 112 is as follows: Figure 14 As shown, the first remelting zone 112 has a conical shape and a loose, porous internal structure, and its specific construction can be described as follows: Figure 14 The situation is shown in the left figure. Figure 14 The first remelting zone 112 shown in the middle left figure is the remelting zone generated in the first module 110 when the target laser passes through the second module 120 and irradiates the first plane of the first module 110. The second remelting zone 122 is similar to the first remelting zone 112, and will not be described in detail here.

[0133] It should be understood that in specific implementation scenarios, the re-fusion zone will only appear below the direction of the target laser propagation. For example, when the target laser shines on the first module 110 from above, the first module 110 will also generate... Figure 14 The first connection module 130 shown in the right figure includes a modified region 111 and a first remelting region 112.

[0134] based on Figure 14 As shown in the right-hand figure, under some poor processing conditions, the first connecting module 130 may include the first re-fusion zone 112, such as... Figure 15 As shown. When the target laser irradiates the interface between the first module 110 and the second module 120 through the second module 120, a first remelting zone 112 with internal loose and porous structure is generated in the first module 110, and a second remelting zone 122 with internal loose and porous structure and a modified zone 121 of the second module are generated in the second module. In this case, the first remelting zone 112, the second remelting zone 122 and the modified zone 121 of the second module constitute the first connecting module 130. The first remelting zone 112 and the second remelting zone 122 provide a connection between the first module 110 and the second module 120 and provide a sealed connection for the cavity. No limitation is made here.

[0135] Furthermore, in common scenarios, the re-fusion area of ​​the first module can also be distributed in two different regions of the first connection module 130. The shape and structure of the first re-fusion area 112 and the third re-fusion area 113 can be as follows: Figure 16 As shown in the legend on the left, in Figure 16The first remelting zone 112 and the third remelting zone 113 shown in the left-hand diagram are remelting zones generated in the first module 110 when the target laser passes through the second module 120 and irradiates the first plane of the first module 110. The remelting zone of the first module includes the first remelting zone 112 and the third remelting zone 113. The first remelting zone 112 is conical and extends into the modified region 111 of the first module. The third remelting zone 113 is circular or elliptical and is distributed inside the modified region 111 of the first module. The width of the first remelting zone 112 on the first plane is 0.5 to 30 μm, and the height of the first remelting zone 112 on the first plane is 5 to 400 μm.

[0136] It should be understood that in specific implementation scenarios, the re-fusion zone will only appear below the direction of the target laser propagation. For example, when the target laser shines on the first module 110 from above, the first module 110 will also generate... Figure 16 The first connection module 130 shown in the right figure includes a modification region 111, a first remelting region 112, and a third remelting region 113. Figure 16 The scenario shown only illustrates the case where the third re-fusion area 113 includes one re-fusion area. In specific implementation scenarios, the third re-fusion area 113 may include at least one region, and there is no limitation here.

[0137] It should be understood that the description of the relative position and shape of the first melting zone 112 and the third melting zone 113 here is only an example. In specific application scenarios, the cross-sections of the first melting zone 112 and the third melting zone 113 are made of loose and porous material, and their specific shapes may vary depending on the specific processing method and operation. No restrictions are imposed here.

[0138] In this case, the width of the first connecting module 130 on the first plane is 1 to 300 μm, and the height of the first connecting module 130 on the first plane is 10 to 800 μm.

[0139] Similarly, the re-fusion area of ​​the second module can also be distributed in two different areas of the first connection module 130, and its distribution is the same as described above. Figure 14 The remelting area of ​​the first module is similarly distributed. The remelting area of ​​the second module includes a second remelting area 122 and a fourth remelting area 123. The third remelting area is conical. The second remelting area 122 extends into the modified area 121 of the second module. The fourth remelting area 113 is circular or elliptical and is distributed inside the modified area 121 of the second module. The width of the second remelting area 122 on the first plane is 0.5 to 30 μm, and the height of the second remelting area 122 on the first plane is 5 to 400 μm.

[0140] In this case, the width of the first connecting module 130 on the first plane is 1 to 300 μm, and the height of the first connecting module 130 on the first plane is 10 to 800 μm.

[0141] In addition to the above, Figure 1 When both the first module 110 and the second module 120 are made of a transparent material for the target laser, the first connecting module 130 can also be a first remelting zone 112 or a second remelting zone 122. The first remelting zone 112 is conical, with a width of 0.5–30 μm and a height of 5–400 μm. The second remelting zone 122 is also conical, with a width of 0.5–30 μm and a height of 5–400 μm.

[0142] The following is a summary of the aforementioned... Figure 1 In the case where the first module 110 is made of a transparent material for the target laser and the second module 120 is made of an opaque material for the target laser, this is the aforementioned situation. Figure 2 The scenario shown will be explained. The aforementioned scenario assumes that the first connecting module 130 is obtained through an ideal fabrication method, that is, the first connecting module 130 only includes the modified region 111 of the first module.

[0143] In some special cases, the first connection module 130 may further include a remelting area of ​​the first module, which may include a first remelting area 112 and / or a third remelting area 113. The first remelting area 112 is conical and extends into the modified area 111 of the first module. The third remelting area 113 is circular or elliptical and is distributed within the modified area 111 of the first module. The width of the first remelting area 112 on the first plane is 0.5–30 μm, and the height of the first remelting area 112 on the first plane is 5–400 μm.

[0144] Based on the above optoelectronic devices, this application also provides an optical module, which includes any of the aforementioned optoelectronic devices.

[0145] Furthermore, this application also provides an optical communication device, which includes the aforementioned optical module.

[0146] This application also provides an optical communication system, which includes the aforementioned optical communication device.

[0147] This application also provides an atomic clock, which includes any of the aforementioned optoelectronic devices.

[0148] This application also provides a gas sensor, which includes any of the aforementioned optoelectronic devices.

Claims

1. An optoelectronic device, characterized in that, It includes a first module, a second module, and a first connection module; The first plane of the first module is connected to the first plane of the second module through the first connecting module to form a cavity; The width of the first connecting module in the first cross-section is 1 to 300 μm. The first cross-section is the cross-section of the optoelectronic device in the first direction. The material of the first connecting module is a first material, or a second material, or a combination of the first material and the second material. The first material is the material of the first module, and the second material is the material of the second module. At least one of the first material or the second material is a transparent material of the target laser. The projection of the first connecting module on the first plane of the first module is a closed curve.

2. The optoelectronic device according to claim 1, characterized in that, When the first material is a transparent material of the target laser, the first connecting module is formed by melting the first area of ​​the first module under the irradiation of the target laser, or the first connecting module is formed by melting the first area of ​​the first module and the first area of ​​the second module under the irradiation of the target laser, or the first connecting module is formed by melting the first area of ​​the second module under the irradiation of the target laser, wherein the first area of ​​the first module is on the first plane of the first module, and the first area of ​​the second module is on the first plane of the second module.

3. The optoelectronic device according to claim 1 or 2, characterized in that, The distance between the first plane of the first module and the first plane of the second module is less than a first threshold.

4. The optoelectronic device according to any one of claims 1 to 3, characterized in that, The height of the first connection module on the first plane is 10 to 800 μm.

5. The optoelectronic device according to any one of claims 1 to 4, characterized in that, When the first module is made of a transparent material of the target laser, the first connecting module includes the modified region of the first module.

6. The optoelectronic device according to any one of claims 1 to 5, characterized in that, When the second module is made of a transparent material of the target laser, the first connecting module includes the modified area of ​​the second module.

7. The optoelectronic device according to any one of claims 1 to 6, characterized in that, The first connection module further includes at least one of a first re-fusion area or a second re-fusion area, wherein the first re-fusion area is the re-fusion area of ​​the first module and the second re-fusion area is the re-fusion area of ​​the second module.

8. The optoelectronic device according to claim 7, characterized in that, The width of the first remelting zone on the first plane, or the width of the second remelting zone on the first plane, is 0.5 to 30 μm, and the height of the first remelting zone on the first plane, or the height of the second remelting zone on the first plane, is 5 to 400 μm.

9. The optoelectronic device according to any one of claims 1 to 4, characterized in that, When the first material is a transparent material of the target laser and the second material is a non-transparent material of the target laser, the height of the first connecting module in the first cross-section includes a first height and a second height. The first height is the maximum dimension in the first cross-section along the second direction starting from the baseline, and the second length is the maximum dimension in the first cross-section along the third direction starting from the baseline. The second direction is opposite to the third direction, the second direction is perpendicular to the baseline, and the second direction points towards the first module. The distance from the baseline to the first plane of the first module is the same as the distance from the baseline to the first plane of the second module. Wherein, the light transmittance of the target laser in the first material is greater than 90%, the first height is within the first interval size, the second height is 1 to 50 μm, and the first height is greater than the second height.

10. The optoelectronic device according to claim 9, characterized in that, The first connection module also includes the re-fusion area of ​​the first module.

11. The optoelectronic device according to any one of claims 1 to 10, characterized in that, The transparent material of the target laser includes glass, sapphire, or transparent ceramic, while the opaque material of the target laser includes ceramic, metal, or multi-layered opaque material.

12. The optoelectronic device according to any one of claims 1 to 11, characterized in that, When the first material and the second material are different, the ratio of the first transmittance to the second transmittance is 0.1 to 0.

95. The first transmittance is the transmittance of the target laser through the first connecting module, and the second transmittance is the transmittance of the target laser through the first module.

13. An optical module, characterized in that, The optical module includes the optoelectronic device as described in claims 1 to 12.

14. An optical communication device, characterized in that, The optical communication device includes the optical module as described in claim 13.

15. An optical communication system, characterized in that, The system includes the optical communication device of claim 14.

16. An atomic clock, characterized in that, The atomic clock includes the optoelectronic device as described in claims 1 to 12.

17. A gas sensor, characterized in that, The gas sensor includes the optoelectronic device as described in claims 1 to 12.

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