Special process LED high light efficiency light source

Abstract

The application discloses a special process LED high-light-efficiency light source, and relates to the technical field of LED packaging. The special process LED high-light-efficiency light source comprises a symmetrical XPH5050-HP support, a flip blue light chip, a high-reflection double cavity and a composite heat-conducting packaging layer; the symmetrical XPH5050-HP support is integrally formed with a center-symmetrical high-reflection double cavity, the flip blue light chip is fixed on a heat-conducting position at the bottom of the high-reflection double cavity through a eutectic method, and the composite heat-conducting packaging layer fills and covers the high-reflection double cavity and completely wraps the flip blue light chip. The special process LED high-light-efficiency light source is provided with circular and square-round double-cavity structures at the same time, is suitable for different light distribution requirements, greatly reduces the upgrading and reform cost of customer lamps, and is suitable for scenes such as high-power light supplementing lamps, outdoor light projecting lamps and high-brightness industrial and mining lighting.

Description

Technical Field

[0001] This invention relates to the field of LED packaging technology, specifically to a high-efficiency LED light source with a special process, a symmetrical LED light source device that is compatible with EMC5050 package size, high power, high luminous efficiency, and universal matching lens. Background Technology

[0002] The current mainstream 5050 LED light sources on the market are divided into two categories: PCT5050 and EMC5050. Both have obvious technical defects: 1. Low power limit and poor heat dissipation capacity. The conventional PCT5050 bracket substrate has limited heat resistance and thermal conductivity, limiting the maximum driving power of the product to only 2W. Although the traditional EMC5050 substrate has better performance than PCT material, its maximum power is limited to 6W due to the bracket cavity structure, encapsulation colloid, and substrate thermal conduction path. This cannot meet the needs of high-power applications such as outdoor lighting, high-power industrial and mining lamps, and high-brightness supplementary lighting, which require 7W and above. If the power needs to be increased, larger LED devices must be replaced, and the PCB must be redesigned, resulting in high development costs and long development cycles for customers.

[0003] 2. Low luminous efficacy and insufficient luminous utilization. Traditional 5050 cavity structures have simple curvature and reflective surface designs, and the formulation and molding process of encapsulated fluorescent adhesive are simple. They have high light absorption loss, and their luminous flux and luminous efficiency are low at the same power, resulting in poor energy efficiency.

[0004] 3. Poor product replacement compatibility and weak universality of supporting materials. If the power of a high-power LED on the market is increased, the cavity shape, the size of the light-emitting surface, and the light emission angle are usually changed. Customers not only need to redesign and make molds for PCB circuit boards, but the original optical lenses that are compatible with EMC5050 cannot be matched, and additional investment is required for lens mold making, which greatly increases the overall cost of lamp modification. Some improved high-power 5050 products use asymmetrical cavities, and the PCB pad layout changes accordingly, so they cannot directly replace the original EMC5050 light source.

[0005] In summary, existing 5050 LEDs cannot simultaneously meet the four core requirements of 7W high power, high luminous efficiency, PCB compatibility without modification, and universal compatibility with existing lenses. The industry urgently needs a new type of LED light source that can be directly compatible with the existing EMC5050 system, break through the power limit, and significantly improve luminous efficiency. Summary of the Invention

[0006] To address the shortcomings of existing technologies such as low power, poor luminous efficacy, poor replacement compatibility, and the need for re-molding of luminaire components, including PCT5050 and EMC5050 LEDs, the present invention aims to provide a high-efficiency LED light source with a special process. While maintaining the symmetrical dimensions of the standard EMC5050, the rated power of the product is increased to 7W, and the luminous efficacy is improved by more than 20% compared to existing products. It can directly replace the traditional EMC5050 without replacing the PCB board or re-molding the optical lens, thus reducing the development and modification costs of luminaires for customers.

[0007] To achieve the above objectives, the present invention is implemented through the following technical solution: a high-efficiency LED light source with a special process, comprising a symmetrical XPH5050-HP bracket, a flip-chip blue LED, a high-reflectivity dual cavity, and a composite thermally conductive encapsulation layer; the symmetrical XPH5050-HP bracket is integrally formed with a centrally symmetrical high-reflectivity dual cavity, the flip-chip blue LED is eutectic fixed to the bottom thermally conductive position of the high-reflectivity dual cavity, and the composite thermally conductive encapsulation layer fills and covers the interior of the high-reflectivity dual cavity and completely encapsulates the flip-chip blue LED.

[0008] The symmetrical XPH5050-HP bracket adopts a symmetrical outer contour and electrode pad layout that perfectly matches the standard EMC5050, enabling it to directly replace the traditional EMC5050 light source without changing the PCB board. The symmetrical XPH5050-HP bracket is a composite high thermal conductivity integrated molding structure with a high reflectivity coating on the inner wall of the cavity. The flip-chip blue light chip uses eutectic bonding to reduce overall thermal resistance. The optical reference of the dual-cavity reflector is matched with the standard EMC5050 and is compatible with existing EMC5050 lenses. Through the combined process of composite thermally conductive bracket, eutectic bonding, and layered packaging, the rated stable power of the light source can reach 7W, and the luminous efficiency is improved by more than 20% compared with conventional PCT5050 and EMC5050.

[0009] Preferably, the high-reflectivity dual-cavity has two interchangeable configurations: a circular reflective cavity and a square rounded corner reflective cavity. Both cavities adopt an arc-shaped reflective bottom surface design to adapt to different light distribution requirements.

[0010] Preferably, the symmetrical XPH5050-HP bracket is a composite structure of a metal thermally conductive substrate and a modified EMC insulating resin co-fired at high temperature, and the high-reflectivity coating on the inner wall of the cavity is a vacuum-deposited nano-aluminum layer with a passivation protective film.

[0011] Preferably, the layered composite encapsulation layer consists of a thermally conductive bottom silicone layer, a phosphor-emitting silicone layer, and a surface antireflective protective silicone layer, arranged from the inside out, and is prepared using a step-by-step dispensing vacuum forming process.

[0012] A special process for manufacturing a high-efficiency LED light source includes the following steps: S1. Double-layer composite XPH5050-HP bracket integral molding: copper-molybdenum thermally conductive substrate and modified EMC resin are molded and composited, and after high-temperature co-firing, integrally stamped to form symmetrical double cavity, standard outer contour and symmetrical electrode pads. S2. Vacuum nano-deposit of aluminum on the inner wall of the cavity, followed by deposition of a passivation protective film, to complete the preparation of a highly reflective inner wall; S3. The flip-chip is bonded to the heat-conducting area at the bottom of the cavity using a low-temperature silver-tin eutectic process. S4. Layered dispensing encapsulation: First, apply a layer of high thermal conductivity transparent silicone to fill the gaps between the chips. After curing, apply a curved silicone mixed with phosphor. Vacuum degassing ensures that the curved surface of the cavity fits completely. Finally, cover with an ultra-thin anti-reflective silicone protective layer. S5. Overall high-temperature curing, substrate cutting, and photoelectric sorting are performed to obtain a 7W high-efficiency LED light source product.

[0013] The present invention has the following beneficial effects: 1. The outer contour, pad layout, and overall size of this invention are completely consistent with the traditional EMC5050. The symmetrical dual-cavity structure does not change the original surface mount points. Customers do not need to redesign, sample, or mold the PCB circuit board. They can directly replace the original EMC5050 material, shortening the lamp upgrade cycle.

[0014] 2. Through the dual special processes of copper-molybdenum composite high thermal conductivity XPH5050-HP bracket and flip-chip eutectic low thermal resistance packaging, compared with the existing PCT5050 (maximum 2W) and conventional EMC5050 (maximum 6W), this product can continuously and stably drive 7W, with significantly improved heat dissipation performance. It can be applied to high-load scenarios such as high-power supplementary lighting, outdoor floodlighting, and high-brightness lighting.

[0015] 3. The cavity nano high-reflectivity coating reduces light absorption, and the layered composite fluorescent encapsulation reduces interface light loss. Under the same power conditions, the luminous efficiency is improved by at least 20% compared with the existing EMC5050 and PCT5050 products. Under the same brightness, the driving power consumption can be reduced, and the energy saving effect of the lamp is obvious.

[0016] 4. The cavity arc angle, overall external dimensions of the light-emitting surface, and height of the light-emitting center are matched with the traditional EMC5050 optical reference. When customers upgrade to high-power light sources, there is no need to redesign and injection mold optical lenses, which greatly reduces the development cost of lamp supporting materials.

[0017] 5. Two cavity structures are available: a circular cavity and a square cavity with rounded corners. The circular cavity has stronger light focusing, while the square cavity has a larger light-emitting surface. Customers can choose freely according to their light distribution needs. Both types meet the universal compatibility characteristics of PCBs and lenses. Attached Figure Description

[0018] The present invention will now be described in detail with reference to the accompanying drawings and specific embodiments; Figure 1 This is a schematic diagram of the circular light-emitting cavity light source of the present invention; Figure 2 This is a front view of the circular light-emitting cavity support of the present invention; Figure 3 for Figure 2 Top view; Figure 4 This is a cross-sectional view of the high-reflectivity dual-cavity structure of the present invention; Figure 5 This is a schematic diagram of the square light-emitting cavity light source of the present invention; Figure 6 This is a schematic diagram of the square light-emitting cavity support of the present invention; Figure 7 for Figure 6 Top view; Figure 8 for Figure 6 Side view. Detailed Implementation

[0019] To make the technical means, creative features, objectives and effects of this invention easier to understand, the invention will be further described below in conjunction with specific embodiments.

[0020] Reference Figure 1-8 The specific embodiment adopts the following technical solution: a high-efficiency LED light source with a special process, including a symmetrical XPH5050-HP bracket 1, a flip-chip blue light 2, a high-reflection dual cavity 3, and a composite thermally conductive encapsulation layer 4; the symmetrical XPH5050-HP bracket 1 is integrally formed with a centrally symmetrical high-reflection dual cavity 3, the flip-chip blue light 2 is eutectic fixed to the bottom thermally conductive position of the high-reflection dual cavity 3, and the composite thermally conductive encapsulation layer 4 fills and covers the interior of the high-reflection dual cavity 3 and completely encapsulates the flip-chip blue light 2.

[0021] It is worth noting that the overall outer contour dimensions of the symmetrical EMC bracket 1 are 5.38±0.05mm×5.38±0.05mm, with C0.60 chamfers at the four corners. The electrode pads on both sides of the bracket are arranged in a centrally symmetrical manner, and the position and outer boundary dimensions of the pads are completely consistent with the standard EMC5050. The symmetrical EMC bracket 1 has a centrally symmetrical dual-cavity structure (high-reflectivity dual-cavity 3) inside, with a single cavity lateral width of 2.12mm, a total lateral length of 4.68±0.05mm, a 0.44mm isolation rib 5 in the middle of the dual cavities, and a single cavity longitudinal light emission height of 4.48±0.05mm. It is worth noting that the symmetrical EMC bracket 1 is made by a double-layer metal composite stamping and high-temperature ceramic co-firing integrated process. The bottom layer is a copper-molybdenum composite thermally conductive substrate, and the surface layer is a modified EMC insulating resin filled with thermally conductive ceramic particles. The inner wall of the cavity is provided with a vacuum-deposited nano-aluminum high-reflectivity layer. It is worth noting that the flip-chip 2 is fixed to the bottom of the high-reflectivity dual-cavity 3 by low-temperature silver-tin eutectic bonding, and the encapsulation adopts a layered composite silicone process, which consists of a bottom thermally conductive silicone layer, a phosphor silicone light-emitting layer, and a surface antireflective silicone protective layer. It is worth noting that the bottom of the high-reflectivity dual cavity 3 is provided with an arc-shaped reflective surface. The angle of the arc-shaped reflective surface and the outer contour dimension of the light-emitting surface are matched with the standard EMC5050 light-emitting reference, and can be directly adapted to the existing EMC5050 matching optical lens. It is worth noting that the light source has a stable driving power of up to 7W and a luminous efficiency that is more than 20% higher than that of traditional EMC5050 and PCT5050 LEDs.

[0022] It is worth noting that the high-reflectivity dual-cavity 3 includes two interchangeable structures. The first is a circular light-emitting cavity 31, with a bottom arc angle of 57°, an effective reflective bottom surface width of 5.00±0.03mm, and a bottom narrow edge spacing of 4.52±0.03mm. The second is a square rounded corner light-emitting cavity 32, with a bottom opposite arc angle of 52° and another opposite arc angle of 34.5°, an effective reflective bottom surface width of 5.04±0.03mm, and a bottom narrow edge spacing of 4.76±0.03mm.

[0023] In addition, the surface of the nano-aluminum high-reflectivity layer on the inner wall of the high-reflectivity dual-cavity inner wall is provided with a passivation protective film, and the reflectivity of the inner wall is ≥98%.

[0024] A special process for manufacturing high-efficiency LED light sources includes the following steps: S1. Dual-layer composite XPH5050-HP bracket integral molding: copper-molybdenum thermally conductive substrate and modified EMC resin are molded together, and after high-temperature co-firing, integrally stamped to form symmetrical dual cavities, 5.38±0.05mm×5.38±0.05mm standard outer contour and symmetrical electrode pads; S2. Vacuum nano-deposit of aluminum on the inner wall of the cavity, followed by deposition of a passivation protective film, to complete the preparation of a highly reflective inner wall; S3. The flip-chip is bonded to the heat-conducting area at the bottom of the cavity using a low-temperature silver-tin eutectic process. S4. Layered dispensing encapsulation: First, apply a layer of high thermal conductivity transparent silicone to fill the gaps between the chips. After curing, apply a curved silicone mixed with phosphor. Vacuum degassing ensures that the curved surface of the cavity fits completely. Finally, cover with an ultra-thin anti-reflective silicone protective layer. S5. Overall high-temperature curing, substrate cutting, and photoelectric sorting are performed to obtain a 7W high-efficiency LED light source product.

[0025] The stent of this invention is manufactured using an integrated process of double-layer metal composite stamping and high-temperature ceramic co-firing. ① The bottom heat-conducting layer uses a high-conductivity copper-molybdenum composite substrate to improve the vertical heat conduction rate and quickly dissipate the 7W of operating heat of the chip. ② The surface insulation EMC resin uses high heat-resistant modified epoxy resin and is filled with ceramic thermally conductive particles, increasing the temperature resistance to 180℃ and solving the problems of yellowing and delamination during long-term high-power operation; ③ The reflective inner wall of the cavity adopts a composite process of vacuum nano-evaporated aluminum + passivation protective film, with a reflectivity of ≥98%, reducing light absorption loss; ④ The overall bracket adopts a centrally symmetrical one-piece stamping process to ensure that the dimensions of the pads on both sides and the dual cavities are completely symmetrical and match the light output adaptation angle of the existing EMC5050 lens.

[0026] The process employs flip-chip eutectic bonding + layered composite phosphor encapsulation technology. ① The chip uses a large-size flip-chip blue light chip, which is die bonded by low-temperature silver-tin eutectic bonding to reduce interface thermal resistance and support 7W continuous high-power drive; ② First layer of thin adhesive: High thermal conductivity transparent silicone base layer, fills the gaps between chips, and quickly conducts heat; ③ Second fluorescent layer: The fluorescent powder is uniformly mixed with high refractive index silicone, and pressure dispensing + vacuum degassing molding is used to form the curved surface of the cavity in one step to ensure the consistency of the curved surface reflection; ④ Surface antireflection protective layer: Ultra-thin high-transparency silicone film reduces interface reflection loss and improves overall light emission efficiency.

[0027] The cavity's arc angle and the overall rectangular outline of the light-emitting surface are perfectly matched with the external dimensions of the traditional EMC5050 light-emitting surface. The cavity's light-emitting projection boundary and the height of the light-emitting center coincide with the optical reference of the existing EMC5050 lens. Customers can directly use their existing EMC5050 lens without the need to create a new lens mold.

[0028] This invention features both circular and square rounded corner dual-cavity structures to accommodate different light distribution requirements, significantly reducing the cost of upgrading and modifying lighting fixtures for customers. It is suitable for high-power supplementary lights, outdoor floodlights, high-brightness industrial and mining lighting, and other scenarios.

[0029] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of the invention. Various changes and modifications can be made to the invention without departing from its spirit and scope, and all such changes and modifications fall within the scope of the present invention as claimed. The scope of protection of this invention is defined by the appended claims and their equivalents.

Claims

1. A high-efficiency LED light source using a special process, characterized in that, It includes a symmetrical XPH5050-HP bracket, a flip-chip, a high-reflectivity dual cavity, and a composite thermally conductive encapsulation layer; the symmetrical XPH5050-HP bracket is integrally formed with a centrally symmetrical high-reflectivity dual cavity, the flip-chip is eutectic fixed to the bottom thermally conductive position of the high-reflectivity dual cavity, and the composite thermally conductive encapsulation layer fills and covers the interior of the high-reflectivity dual cavity and completely encapsulates the flip-chip.

2. The LED high-efficiency light source according to claim 1, characterized in that, The symmetrical XPH5050-HP bracket adopts a symmetrical outer contour and electrode pad layout that is completely matched with the standard EMC5050; the symmetrical XPH5050-HP bracket is a composite high thermal conductivity integrated molding structure, and the inner wall of the cavity is provided with a high reflectivity coating; the flip-chip blue light chip adopts eutectic bonding to reduce the overall thermal resistance; the optical reference of the dual-cavity reflective cavity is matched with the standard EMC5050 and is compatible with existing EMC5050 matching lenses.

3. The LED high-efficiency light source according to claim 1, characterized in that, The high-reflectivity dual-cavity structure has two interchangeable configurations: a circular reflective cavity and a square rounded corner reflective cavity. Both cavities adopt an arc-shaped reflective bottom surface design to adapt to different light distribution requirements.

4. The LED high-efficiency light source according to claim 1, characterized in that, The symmetrical XPH5050-HP bracket is a composite structure of a metal thermally conductive substrate and a modified EMC insulating resin co-fired at high temperature. The high-reflectivity coating on the inner wall of the cavity is a vacuum-deposited nano-aluminum layer with a passivation protective film.

5. The LED high-efficiency light source according to claim 1, characterized in that, The layered composite encapsulation layer consists of a thermally conductive bottom silicone layer, a phosphor-emitting silicone layer, and a surface antireflective protective silicone layer, arranged from the inside out. It is prepared using a step-by-step dispensing vacuum forming process.

6. A special process for manufacturing a high-efficiency LED light source, characterized in that, Includes the following steps: (S1) The double-layer composite XPH5050-HP bracket is integrally formed: the copper-molybdenum thermally conductive substrate is molded and composited with modified EMC resin, and after high-temperature co-firing, it is integrally stamped to form a symmetrical double cavity, standard outer contour and symmetrical electrode pads. (S2) Vacuum nano-deposit of aluminum on the inner wall of the cavity, followed by deposition of a passivation protective film to complete the preparation of a highly reflective inner wall. (S3) The flip-chip is solidified in the heat-conducting area at the bottom of the cavity using a low-temperature silver-tin eutectic process; (S4) Layered dispensing encapsulation: First, apply a layer of high thermal conductivity transparent silicone to fill the gaps between the chips. After curing, apply a curved silicone mixed with phosphor. Vacuum degassing ensures that the curved surface of the cavity fits completely. Finally, cover with an ultra-thin anti-reflective silicone protective layer. (S5) Overall high-temperature curing, substrate cutting, photoelectric sorting, to obtain a 7W high-efficiency LED light source product.

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