Packaging structure

CN123021850APending Publication Date: 2026-10-30ENNOSTAR CORP
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Patent Information

Application Number
CN202610427455.4
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2025-04-28
Filing Date
2026-04-02
Publication Date
2026-10-30

AI Technical Summary

Technical Problem

[0002]目前的封装技术面临诸多问题,例如,在传统芯片尺寸封装(CSP)架构中,除有底部漏光,造成发光效率下降的问题,由于芯片尺寸持续微缩,也会导致打件良率不佳

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Abstract

The application discloses a packaging structure, which comprises a chip, a first pad arranged on the chip, a color conversion layer surrounding the chip, a reflecting layer arranged on the color conversion layer and exposing the first pad, a redistribution layer arranged on the reflecting layer and the first pad, and a second pad arranged on the redistribution layer and electrically connected to the first pad.
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Description

Technical Field

[0001] This invention relates to a packaging structure, and more particularly to a packaging structure in which reflective layers are provided on both sides of a chip. Background Technology

[0002] Current packaging technologies face numerous challenges. For instance, in traditional chip-scale packaging (CSP) architectures, besides bottom light leakage leading to reduced luminous efficiency, the continuous miniaturization of chip dimensions also results in poor assembly yields. In non-chip-scale packaging (NCSP) architectures, there is the issue of secondary melting, and BT substrates are expensive, with components being thicker than those in traditional CSP.

[0003] Therefore, designing a packaging structure that can not only avoid secondary melting during chip bonding and solve the problem of poor bonding accuracy, but also improve luminous efficiency is something that everyone is looking forward to. Summary of the Invention

[0004] In some embodiments, a packaging structure is provided, comprising: a chip; a first pad disposed on the chip; a color conversion layer surrounding the chip; a reflective layer disposed on the color conversion layer, exposing the first pad; a redistribution layer disposed on the reflective layer and the first pad; and a second pad disposed on the redistribution layer and electrically connected to the first pad.

[0005] The packaging structure of this invention can be applied to various types of electronic devices. To make the features and advantages of this invention more apparent and understandable, various embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0006] The following detailed description, in conjunction with the accompanying drawings, will provide a better understanding of the embodiments of the present invention. It is worth noting that, according to industry standard practice, some features may not be drawn to scale. In fact, for clarity of description, the dimensions of different features may be increased or decreased.

[0007] Figure 1A This is a cross-sectional schematic diagram of an encapsulation structure according to some embodiments of the present invention;

[0008] Figure 1B This is a cross-sectional schematic diagram of an encapsulation structure according to some embodiments of the present invention;

[0009] Figure 2 This is a cross-sectional schematic diagram of an encapsulation structure according to some embodiments of the present invention;

[0010] Figure 3 This is a cross-sectional schematic diagram of an encapsulation structure according to some embodiments of the present invention;

[0011] Figures 4A to 4N This is a cross-sectional schematic diagram of a packaging structure manufacturing method according to some embodiments of the present invention;

[0012] Figures 5A to 5N This is a cross-sectional schematic diagram of a packaging structure manufacturing method according to some embodiments of the present invention.

[0013] Symbol Explanation

[0014] 10, 100, 1000: Package structure

[0015] 12, 120, 1200: Chips

[0016] 14, 140, 1400: First pad

[0017] 16, 160, 1600: Color conversion layer

[0018] 18, 180, 1800: Reflective layer

[0019] 20,200,2000: Redistribution layer

[0020] 22,220,2200: Second pad

[0021] 24, 240, 2400: Dielectric layer

[0022] 102, 1020: First carrier board

[0023] 104, 108, 112, 1040, 1080, 1120: Laser dissociation layer

[0024] 106, 1060: Second carrier plate

[0025] 110, 1100: Third carrier plate

[0026] 1900: First reflective layer

[0027] 1950: Second reflective layer

[0028] A1, A1', A1'': Surface area of ​​the first pad

[0029] A2, A2', A2'': Surface area of ​​the second liner Detailed Implementation

[0030] Please see Figure 1A According to some embodiments of the present invention, a packaging structure 10 is provided. Figure 1A This is a cross-sectional schematic diagram of the encapsulation structure 10.

[0031] like Figure 1AAs shown, the package structure 10 includes a chip 12, a first pad 14, a color conversion layer 16, a reflective layer 18, a redistribution layer 20, and a second pad 22. The first pad 14 is disposed on the chip 12. The color conversion layer 16 surrounds the chip 12. The reflective layer 18 is disposed on the color conversion layer 16, exposing the first pad 14. The redistribution layer 20 is disposed on the reflective layer 18 and the first pad 14. The second pad 22 is disposed on the redistribution layer 20 and is electrically connected to the first pad 14.

[0032] In some embodiments, chip 12 is disposed in package structure 10, for example, in a flip-chip configuration. In some embodiments, package structure 10 may include a single chip 12. In some embodiments, package structure 10 may include a plurality of chips 12 arranged, for example, in a matrix configuration. In some embodiments, chip 12 may include light-emitting diodes (LEDs), such as green LED chips, red LED chips, or blue LED chips, but the invention is not limited thereto. For example, green LED chips may emit green visible light with wavelengths between approximately 510 nm and 570 nm, red LED chips may emit red visible light with wavelengths between approximately 610 nm and 750 nm, and blue LED chips may emit blue visible light with wavelengths between approximately 440 nm and 470 nm. In some embodiments, the material of the LED chip may include inorganic semiconductor materials, such as III-V compounds, II-VI compounds, or other suitable semiconductor materials, but the invention is not limited thereto.

[0033] In some embodiments, chip 12 may include single-sided light emission. In some embodiments, chip 12 may include multi-sided light emission, such as four-sided or five-sided light emission, but the present invention is not limited thereto.

[0034] In some embodiments, the first pad 14 may include a conductive material, such as metallic materials like chromium, aluminum, nickel, gold, platinum, tin, copper, or alloys thereof, or other suitable metallic materials, but the invention is not limited thereto. It is worth noting that the foregoing materials and combinations thereof are merely examples, and the invention may utilize any materials and combinations thereof known to those skilled in the art to form the first pad 14, and is not limited to the specific embodiments described above.

[0035] In some embodiments, the color conversion layer 16 may include phosphor, quantum dots (QD), other suitable materials, or combinations thereof, to convert the single color of light emitted by the LED chip into light of a specific color. Taking the package structure 10 emitting white visible light as an example, the chip 12 may include a blue LED chip, and the color conversion layer 16 may include yellow phosphor. In this case, a portion of the blue visible light emitted by the blue LED chip can be absorbed by the yellow phosphor, thereby converting it into yellow visible light. In this way, the yellow visible light can be mixed with the blue visible light to emit white visible light.

[0036] In some embodiments, chip 12 may include a blue LED chip, and color conversion layer 16 may include red phosphor and green phosphor. In this case, a portion of the blue visible light emitted by the blue LED chip can be absorbed by the red and green phosphors, thereby converting it into red and green visible light. In this way, red, green, and blue visible light can be mixed to emit white visible light.

[0037] In some embodiments, the reflective layer 18 may be a single reflective layer. In some embodiments, the reflective layer 18 may include ink, silicon oxide resin doped with titanium dioxide (TiO2), or other suitable reflective materials, but the invention is not limited thereto. It is worth mentioning that the foregoing materials are merely examples, and the present invention may use any materials known to those skilled in the art to form the reflective layer 18, and is not limited to the specific embodiments described above.

[0038] In some embodiments, the light reflectivity of the reflective layer 18 may be between 80% and 99%, but the present invention is not limited thereto. For example, the light reflectivity of the reflective layer 18 may be 95%, 96%, 97%, 98%, 99%, or any value or range between the above values.

[0039] In some embodiments, the redistribution layer 20 may be composed of a plurality of dielectric layers 24 and a plurality of metal layers (not shown) stacked on top of each other.

[0040] In some embodiments, the dielectric layer 24 constituting the redistribution layer 20 may include polycyclooctene (PCO), polybenzoxazole (PBO), photosensitive polyimide (PSPI), polysiloxane, or other suitable polymeric materials, but the present invention is not limited thereto.

[0041] In some embodiments, the metal layer (not shown) constituting the redistribution layer 20 may include metallic materials such as chromium, aluminum, nickel, gold, platinum, tin, copper, or alloys thereof, or other suitable metallic materials, but the present invention is not limited thereto.

[0042] In some embodiments, the redistribution layer 20 may be disposed on a portion of the reflective layer 18 and the first pad 14 (not shown).

[0043] In some embodiments, the second pad 22 may include a conductive material, such as a metallic material like chromium, aluminum, nickel, gold, platinum, tin, copper, or alloys thereof, or other suitable metallic materials, but the invention is not limited thereto.

[0044] In some embodiments, the metal layer (not shown) of the redistribution layer 20 is electrically connected to the first pad 14 and the second pad 22.

[0045] In some embodiments, the first pad 14 has a surface area A1, and the second pad 22 has a surface area A2, and the surface area A2 of the second pad 22 is greater than the surface area A1 of the first pad 14.

[0046] In some embodiments, the package structure 10 may be a chip scale package (CSP). In some embodiments, the package structure 10 may include a chip scale package (CSP) with a light emission angle of approximately 120 degrees to 140 degrees.

[0047] Please see Figure 1B According to some embodiments of the present invention, a packaging structure 10 is provided. Figure 1B This is a cross-sectional schematic diagram of the encapsulation structure 10.

[0048] Figure 1B The embodiment of the packaging structure 10 shown is similar to Figure 1A The main difference between the embodiments of the encapsulation structure 10 shown lies in the different configuration of the reflective layer 18 in the encapsulation structure, which will be further explained below. Figure 1B In the middle, the rest are similar Figure 1A The disclosed details, such as component structure, dimensions, and constituent materials, will not be elaborated here.

[0049] like Figure 1B As shown, in some embodiments, the reflective layer 18 is disposed not only on the color conversion layer 16 and exposing the first pad 14, but also disposed between the first pads 14.

[0050] Please see Figure 2 According to some embodiments of the present invention, a packaging structure 100 is provided. Figure 2 This is a cross-sectional schematic diagram of the encapsulation structure 100.

[0051] like Figure 2 As shown, the package structure 100 includes a chip 120, a first pad 140, a color conversion layer 160, a reflective layer 180, a redistribution layer 200, and a second pad 220. The first pad 140 is disposed on the chip 120. The color conversion layer 160 surrounds the chip 120. The reflective layer 180 is disposed on the color conversion layer 160, exposing the first pad 140. The redistribution layer 200 is disposed on the reflective layer 180 and the first pad 140. The second pad 220 is disposed on the redistribution layer 200 and electrically connected to the first pad 140. In some embodiments, the redistribution layer 200 may be composed of multiple dielectric layers 240 and multiple metal layers (not shown) stacked on top of each other.

[0052] In some embodiments, the first pad 140 has a surface area A1' and the second pad 220 has a surface area A2', and the surface area A2' of the second pad 220 is greater than the surface area A1' of the first pad 140.

[0053] Figure 2 The main difference between the embodiment of the encapsulation structure 100 shown and the embodiment of the encapsulation structure 10 shown in FIG. 1 lies in the different constituent materials of the reflective layer 180 of the encapsulation structure 100 and the reflective layer 18 of the encapsulation structure 10, which will be further explained below. Figure 2 Other parts similar to those shown in Figure 1, such as component structure, size, and constituent materials, will not be described in detail here.

[0054] like Figure 2 As shown, in some embodiments, the reflective layer 180 may be a single reflective layer. In some embodiments, the reflective layer 180 may include gold, silver, titanium, copper, aluminum, or alloys or combinations thereof, or other suitable metallic reflective materials, but the invention is not limited thereto.

[0055] Please see Figure 3 According to some embodiments of the present invention, a packaging structure 1000 is provided. Figure 3 This is a cross-sectional schematic diagram of the 1000 package structure.

[0056] like Figure 3As shown, the package structure 1000 includes a chip 1200, a first pad 1400, a color conversion layer 1600, a reflective layer 1800, a redistribution layer 2000, and a second pad 2200. The first pad 1400 is disposed on the chip 1200. The color conversion layer 1600 surrounds the chip 1200. The reflective layer 1800 is disposed on the color conversion layer 1600, exposing the first pad 1400. The redistribution layer 2000 is disposed on the reflective layer 1800 and the first pad 1400. The second pad 2200 is disposed on the redistribution layer 2000 and electrically connected to the first pad 1400. In some embodiments, the redistribution layer 2000 may be composed of multiple dielectric layers 2400 and multiple metal layers (not shown) stacked on top of each other. In some embodiments, the first pad 1400 has a surface area A1'', and the second pad 2200 has a surface area A2'', and the surface area A2'' of the second pad 2200 is greater than the surface area A1'' of the first pad 1400.

[0057] Figure 3 The main difference between the embodiment of the encapsulation structure 1000 shown and the embodiment of the encapsulation structure 10 shown in Figure 1 lies in the number of layers and the constituent materials between the reflective layer 1800 of the encapsulation structure 1000 and the reflective layer 18 of the encapsulation structure 1000, which will be further explained below. Figure 3 Other parts similar to those shown in Figure 1, such as component structure, size, and constituent materials, will not be described in detail here.

[0058] like Figure 3 As shown, in some embodiments, the reflective layer 1800 may include a first reflective layer 1900 and a second reflective layer 1950, with the first reflective layer 1900 disposed on the color conversion layer 1600 and the second reflective layer 1950 disposed on the first reflective layer 1900. In some embodiments, the first reflective layer 1900 may include ink, silicon oxide resin doped with titanium dioxide (TiO2), or other suitable reflective materials, but the invention is not limited thereto. It is worth mentioning that the foregoing materials are merely examples, and the invention may use any materials known to those skilled in the art to form the first reflective layer 1900, and is not limited to the specific embodiments described above.

[0059] In some embodiments, the second reflective layer 1950 may include gold, silver, titanium, copper, aluminum, or alloys or combinations thereof, or other suitable metallic reflective materials, but the invention is not limited thereto.

[0060] In some embodiments, the material composition of the first reflective layer 1900 and the second reflective layer 1950 may be interchanged. For example, the first reflective layer 1900 may include gold, silver, titanium, copper, aluminum, or alloys or combinations thereof, or other suitable metallic reflective materials, but the invention is not limited thereto. The second reflective layer 1950 may include ink, silicon oxide resin doped with titanium dioxide (TiO2), or other suitable reflective materials, but the invention is not limited thereto.

[0061] In some embodiments, multiple such Figures 1A to 3 The encapsulation structure (10, 100, or 1000) shown can be further disposed on a substrate (not shown) to form a backlight module (not shown).

[0062] In some embodiments, multiple such Figures 1A to 3 The package structures shown (10, 100, or 1000) are arranged on the substrate in, for example, a matrix configuration and by metal welding.

[0063] In some embodiments, the material of the aforementioned substrate may include: group IV elements or group IV compounds, such as silicon (Si), diamond (C), or silicon carbide (SiC); group III-V compounds, such as gallium nitride (GaN), aluminum gallium nitride (AlGaN), aluminum nitride (AlN), gallium phosphide (GaP), gallium arsenide (GaAs), or aluminum gallium arsenide (AlGaAs); other suitable materials; or combinations thereof, but the invention is not limited thereto.

[0064] In some embodiments, the aforementioned sheet material may include a flexible substrate, a soft substrate, a rigid substrate, or a combination thereof, but the present invention is not limited thereto.

[0065] In some embodiments, the material of the aforementioned substrate may include glass, quartz, sapphire, ceramic, or other suitable materials or combinations thereof, but the invention is not limited thereto. For example, the aforementioned substrate may be a sapphire substrate. In some embodiments, the material of the aforementioned substrate may include polyimide (PI), polycarbonate (PC), polyethylene terephthalate (PET), polypropylene (PP), polysiloxane, or other suitable materials or combinations thereof, but the invention is not limited thereto.

[0066] In some embodiments, the aforementioned sheet material may include a light-transmitting substrate, a semi-light-transmitting substrate, or an opaque substrate, but the present invention is not limited thereto.

[0067] In some embodiments, multiple such Figures 1A to 3The illustrated encapsulation structures (10, 100, or 1000) can emit visible light of the same color, but the invention is not limited thereto. For example, the visible light can be white light, blue light, red light, green light, yellow light, or other suitable visible light or combinations thereof, but the invention is not limited thereto.

[0068] In some embodiments, multiple such Figures 1A to 3 A portion of the encapsulation structure (10, 100, or 1000) may emit a first visible light, and another portion may emit a second visible light, wherein the first visible light may be different from the second visible light.

[0069] Please see Figures 4A to 4N According to some embodiments of the present invention, a method is provided as follows: Figure 2 Method for manufacturing the package structure 100 shown. Figures 4A to 4N This is a cross-sectional schematic diagram of the packaging structure manufacturing method.

[0070] like Figure 4A As shown, a first carrier plate 102 is provided, on which a laser dissociation layer 104 is disposed.

[0071] like Figure 4B As shown, a patterned reflective layer 180 is formed on the first carrier plate 102. In some embodiments, the patterned reflective layer 180 may include gold, silver, titanium, copper, aluminum, or alloys or combinations thereof, or other suitable metallic reflective materials, but the invention is not limited thereto. It is worth mentioning that the foregoing materials and combinations thereof are merely examples, and the invention may use any materials and combinations thereof known to those skilled in the art to form the patterned reflective layer 180, and is not limited to the specific embodiments described above.

[0072] like Figure 4C As shown, chip 120 is disposed on first carrier board 102, wherein chip 120 is disposed on first carrier board 102 through first pad 140, and patterned reflective layer 180 is located on both sides of chip 120.

[0073] In some embodiments, the chip 120 is placed on the first carrier board 102 in a flip-chip manner, for example.

[0074] In some embodiments, chip 120 may include light-emitting diodes (LEDs), such as green LED chips, red LED chips, or blue LED chips, but the invention is not limited thereto.

[0075] In some embodiments, the material of chip 120 may include inorganic semiconductor materials, such as III-V compounds, II-VI compounds, or other suitable semiconductor materials, but the invention is not limited thereto.

[0076] In some embodiments, chip 120 may include single-sided light emission. In some embodiments, chip 120 may include multi-sided light emission, such as four-sided or five-sided light emission, but the invention is not limited thereto. In some embodiments, the first pad 140 may include a conductive material, such as a metallic material like chromium, aluminum, nickel, gold, platinum, tin, copper, or alloys thereof, or other suitable metallic materials, but the invention is not limited thereto.

[0077] like Figure 4D As shown, a color conversion layer 160 is formed, covering the chip 120 and the patterned reflective layer 180. The color conversion layer 160 may include phosphors, quantum dots (QDs), other suitable materials, or combinations thereof, to convert the single color light emitted by the chip 120 into light of a specific color.

[0078] like Figure 4E As shown, a second carrier plate 106 is provided, on which a laser dissociation layer 108 is disposed. Then, the second carrier plate 106 is disposed on the color conversion layer 160, with the second carrier plate 106 relative to the first carrier plate 102.

[0079] like Figure 4F As shown, the first carrier plate 102 and the laser dissociation layer 104 are removed to expose the patterned reflective layer 180 and the first pad 140.

[0080] like Figure 4G As shown, a surface cleaning process is performed, such as a surface cleaning process using inductively coupled plasma (ICP).

[0081] like Figure 4H As shown, a redistribution layer 200 is formed on the patterned reflective layer 180 and the first pad 140. In some embodiments, the redistribution layer 200 may be composed of multiple dielectric layers and multiple metal layers stacked on top of each other. In some embodiments, the dielectric layers constituting the redistribution layer 200 may include polycyclooctene (PCO), polybenzoxazole (PBO), photosensitive polyimide (PSPI), polysiloxane, or other suitable polymeric materials, but the invention is not limited thereto.

[0082] In addition, in some embodiments, the metal layer constituting the redistribution layer 200 may include metallic materials such as chromium, aluminum, nickel, gold, platinum, tin, copper, or alloys thereof, or other suitable metallic materials, but the present invention is not limited thereto.

[0083] like Figure 4IAs shown, the weight distribution layer 200 extends into a second pad 220, which is electrically connected to the first pad 140. In some embodiments, the second pad 220 may include a conductive material, such as a metallic material like chromium, aluminum, nickel, gold, platinum, tin, copper, or alloys thereof, or other suitable metallic materials, but the invention is not limited thereto.

[0084] In some embodiments, the surface area of ​​the second pad 220 is greater than the surface area of ​​the first pad 140.

[0085] like Figure 4J As shown, a third carrier plate 110 is provided, on which a laser dissociation layer 112 is disposed. Then, the third carrier plate 110 is disposed on the redistribution layer 200, the third carrier plate 110 being relative to the second carrier plate 106.

[0086] like Figure 4K As shown, the second carrier plate 106 and the laser dissociation layer 108 are removed, exposing the color conversion layer 160.

[0087] like Figure 4L As shown, the third carrier plate 110 and the laser dissociation layer 112 are removed to expose the redistribution layer 200 and the second pad 220.

[0088] like Figure 4M As shown, the cutting and manufacturing process is carried out to complete the process as shown. Figure 2 The fabrication of the package structure 100 shown is as follows: Figure 4N As shown.

[0089] Please see Figures 5A to 5N According to some embodiments of the present invention, a method for manufacturing a packaging structure 1000 is provided. Figures 5A to 5N This is a cross-sectional schematic diagram of the packaging structure manufacturing method.

[0090] Figures 5A to 5N The embodiment of the package structure 1000 shown is similar to Figures 4A to 4N The main difference between the embodiments of the encapsulation structure 100 shown lies in the number of layers and the composition materials between the reflective layer 1800 of the encapsulation structure 1000 and the reflective layer 180 of the encapsulation structure 1000, which will be further explained below. Figures 5A to 5N In the middle, the rest are similar Figures 4A to 4N The disclosed details, such as component structure, dimensions, and constituent materials, will not be elaborated here.

[0091] like Figure 5A As shown, a first carrier plate 1020 is provided, on which a laser dissociation layer 1040 is disposed.

[0092] like Figure 5B As shown, a second patterned reflective layer 1950 is formed on the first carrier plate 1020, and a first patterned reflective layer 1900 is formed on the second patterned reflective layer 1950.

[0093] In some embodiments, the first patterned reflective layer 1900 may include ink, silicon oxide resin doped with titanium dioxide (TiO2), or other suitable reflective materials, but the invention is not limited thereto.

[0094] In some embodiments, the second patterned reflective layer 1950 may include gold, silver, titanium, copper, aluminum, or alloys or combinations thereof, or other suitable metallic reflective materials, but the invention is not limited thereto.

[0095] In some embodiments, the material composition of the first patterned reflective layer 1900 and the second patterned reflective layer 1950 can be interchanged. For example, the first patterned reflective layer 1900 may include gold, silver, titanium, copper, aluminum, or alloys or combinations thereof, or other suitable metallic reflective materials, but the invention is not limited thereto. The second patterned reflective layer 1950 may include ink, silicon oxide resin doped with titanium dioxide (TiO2), or other suitable reflective materials, but the invention is not limited thereto.

[0096] like Figure 5C As shown, chip 1200 is disposed on first carrier board 1020, wherein chip 1200 is disposed on first carrier board 1020 through first pad 1400, and first patterned reflective layer 1900 and second patterned reflective layer 1950 are located on both sides of chip 1200.

[0097] like Figure 5D As shown, a color conversion layer 1600 is formed, covering a chip 1200, a first patterned reflective layer 1900, and a second patterned reflective layer 1950.

[0098] like Figure 5E As shown, a second carrier plate 1060 is provided, on which a laser dissociation layer 1080 is disposed. Then, the second carrier plate 1060 is disposed on the color conversion layer 1600, with the second carrier plate 1060 relative to the first carrier plate 1020.

[0099] like Figure 5F As shown, the first carrier plate 1020 and the laser dissociation layer 1040 are removed to expose the first patterned reflective layer 1900, the second patterned reflective layer 1950, and the first pad 1400.

[0100] like Figure 5G As shown, a surface cleaning process is performed, such as a surface cleaning process using inductively coupled plasma (ICP).

[0101] like Figure 5H As shown, a redistribution layer 2000 is formed on a first patterned reflective layer 1900, a second patterned reflective layer 1950, and a first pad 1400.

[0102] like Figure 5I As shown, the weight distribution layer 2000 extends into a second pad 2200, which is electrically connected to the first pad 1400.

[0103] like Figure 5J As shown, a third carrier plate 1100 is provided, on which a laser dissociation layer 1120 is disposed. Then, the third carrier plate 1100 is disposed on the redistribution layer 2000, with the third carrier plate 1100 relative to the second carrier plate 1060.

[0104] like Figure 5K As shown, the second carrier plate 1060 and the laser dissociation layer 1080 are removed to expose the color conversion layer 1600.

[0105] like Figure 5L As shown, the third carrier plate 1100 and the laser dissociation layer 1120 are removed to expose the redistribution layer 2000 and the second pad 2200.

[0106] like Figure 5M As shown, the cutting and manufacturing process is carried out to complete the process as shown. Figure 3 The fabrication of the package structure 1000 shown is as follows: Figure 5N As shown.

[0107] Example 1: Luminous efficiency test of the packaged structure (I)

[0108] This embodiment compares the luminous efficiency of conventional packaging structure I with that of the present invention packaging structure II. The test results are shown in Table 1 below.

[0109] Table 1

[0110]

[0111] As can be seen from the test results in Table 1, the packaging structure II of the present invention, which has a reflective layer on both sides of the chip and the reflective layer material is composed of ink or silicon oxide resin doped with titanium dioxide (TiO2), can improve the luminous efficiency by at least 4.98% compared with the traditional packaging structure I without a reflective layer.

[0112] Example 2: Luminous efficiency test of the packaged structure (II)

[0113] This embodiment compares the luminous efficiency of conventional packaging structure I with that of the present invention's packaging structure III. The test results are shown in Table 2 below.

[0114] Table 2

[0115]

[0116] As can be seen from the test results in Table 2, the packaging structure III of the present invention, which has a reflective layer on both sides of the chip and the reflective layer material is composed of gold, silver, titanium, copper, aluminum, or their alloys or combinations, can improve the luminous efficiency by at least 9.3% compared with the traditional packaging structure I without a reflective layer.

[0117] In summary, the present invention provides a packaging structure that, by setting a reflective layer (single or double layer) composed of, for example, ink, silicon oxide resin doped with titanium dioxide (TiO2), or metal material on both sides of the chip, and a redistribution layer (RDL) that enlarges the surface area of ​​the first pad to the second pad, and combining the technology of setting the packaging structure on the substrate by metal welding, not only can secondary melting be avoided during chip bonding and the problem of poor bonding accuracy be solved, but also the luminous efficiency can be improved at the same time.

[0118] Components in the embodiments of this invention can be freely mixed and matched as long as they do not violate the spirit of the invention or conflict with it. Furthermore, the scope of protection of this invention is not limited to the manufacturing processes, machines, manufacturing methods, material compositions, apparatuses, methods, and steps described in the specific embodiments of the specification. Any manufacturing processes, machines, manufacturing methods, material compositions, apparatuses, methods, and steps that are currently or will be developed in the future can be understood from the disclosure of this invention, and can be used according to this invention as long as they can perform substantially the same function or obtain substantially the same result in the embodiments described herein. Therefore, the scope of protection of this invention includes the aforementioned manufacturing processes, machines, manufacturing methods, material compositions, apparatuses, methods, and steps. No embodiment or claim of this invention needs to achieve all the objects, advantages, and / or features disclosed in this invention.

[0119] Several embodiments have been summarized above to enable those skilled in the art to better understand the viewpoints of the embodiments of the present invention. Those skilled in the art should understand that other manufacturing processes and structures can be designed or modified based on the embodiments of the present invention to achieve the same objectives and / or advantages as the embodiments described herein.

Claims

1. A packaging structure, comprising: chip; The first pad is disposed on the chip; A color conversion layer surrounds the chip; A reflective layer is disposed on the color conversion layer, exposing the first pad; A redistribution layer is disposed on the reflective layer and the first pad; as well as The second gasket is disposed on the redistribution layer and is electrically connected to the first gasket.

2. The encapsulation structure of claim 1, wherein the color conversion layer comprises phosphor or quantum dots.

3. The packaging structure as described in claim 1, wherein the reflective layer is a first reflective layer comprising ink or a silicon oxide resin doped with titanium dioxide.

4. The encapsulation structure of claim 1, wherein the reflective layer is a second reflective layer, comprising gold, silver, titanium, copper, aluminum, or an alloy or combination of the aforementioned metals.

5. The encapsulation structure as claimed in claim 1, wherein the reflective layer includes a first reflective layer and a second reflective layer, the first reflective layer being disposed on the color conversion layer, and the second reflective layer being disposed on the first reflective layer.

6. The packaging structure of claim 1, wherein the redistribution layer is composed of a plurality of dielectric layers and a plurality of metal layers stacked on top of each other.

7. The packaging structure of claim 6, wherein the plurality of metal layers electrically connect the first pad and the second pad.

8. The packaging structure of claim 1, wherein the first pad and the second pad comprise conductive material.

9. The packaging structure of claim 1, wherein the surface area of ​​the second pad is larger than that of the first pad.

10. The packaging structure as described in claim 1, wherein the packaging structure is a chip-scale package.