Light emitting source, light emitting device and light source module

Abstract

The application relates to a light-emitting light source, a light-emitting device and a light source module. The light-emitting light source comprises a first light-emitting chip and a second light-emitting chip which are electrically independent of each other, and the first light-emitting chip and the second light-emitting chip respectively emit narrow-spectrum cyan light with a peak wavelength of 470-520 nm and narrow-spectrum red light with a peak wavelength of 610-650 nm; by independently regulating the light-emitting state and the light power ratio of the two chips, mixed light output with the cyan light, the red light and a continuous adjustable range of 700-40000 K can be realized. The light-emitting light source of the application discards the fluorescent powder conversion and short-wave blue light, has high light efficiency and excellent spectral health, and can be applied to the fields of vehicle-mounted lighting, transparent display and health lighting.

Description

Technical Field

[0001] This invention relates to the field of LED technology, and in particular to a light source, a light-emitting device, and a light source module. Background Technology

[0002] Light-emitting diodes (LEDs) are semiconductor devices based on the principle of PN junction electroluminescence. They possess significant advantages such as high electro-optical conversion efficiency, long lifespan, energy saving, environmental friendliness, and small size, earning them the reputation as the green lighting source of the 21st century. Against the backdrop of increasingly strained global energy resources, the widespread application of LEDs in traditional lighting will generate substantial energy-saving benefits, highlighting their strategic importance. With breakthroughs in third-generation semiconductor materials technology, represented by nitrides, the semiconductor lighting industry based on high-power, high-brightness LEDs has rapidly emerged globally, becoming not only a new economic growth point for the semiconductor optoelectronics industry but also triggering a technological revolution in the traditional lighting field. Due to their unique advantages, LEDs have been widely applied in numerous fields and are recognized by the industry as the main direction for future lighting technology development, with enormous market potential.

[0003] However, the current mainstream LED white light generation technologies mainly rely on the following solutions, but all of them face many irreconcilable contradictions between luminous efficacy, color rendering, stability, and cost: Firstly, a blue light chip is used to excite yellow phosphors to generate white light. As the most mainstream white light generation technology currently available, this technology boasts advantages such as mature processes and low cost. However, its emission spectrum is severely insufficient in the red light region, resulting in poor color rendering (especially a very low red color rendering index R9) and poor spectral continuity. Furthermore, its white light is rich in high-energy short-wavelength blue light, and long-term exposure may lead to health risks such as retinal photochemical damage, visual fatigue, circadian rhythm disruption, and sleep disorders.

[0004] Secondly, white light is generated by exciting multi-color phosphors, including red phosphors, with blue / ultraviolet chips. To improve color rendering, the industry has broadened the spectrum by introducing multi-color phosphors, such as red phosphors. Although the addition of red phosphors increases the color rendering index, the light conversion process of phosphors is inevitably accompanied by "Stokes loss," leading to a decrease in overall luminous efficiency. At the same time, existing red phosphors have problems such as low luminous efficiency and poor long-term thermal stability, which will cause light quality degradation and directly affect the lifespan and color consistency of the light source.

[0005] Thirdly, white light is generated by mixing red, green, and blue primary color chips. While this approach achieves a wide color gamut and dynamic color adjustment, it is limited by the physiological characteristic that the human eye is most sensitive to green light, and the relatively low electro-optical conversion efficiency of green LEDs. Therefore, the overall white light efficiency is significantly constrained. More fundamentally, due to differences in material systems and structures, the light output of the three types of chips exhibits inconsistent aging characteristics with temperature and usage time, resulting in severe color coordinate drift. This necessitates a complex feedback system for real-time compensation, significantly increasing cost and control complexity.

[0006] In summary, existing technologies either compromise between luminous efficacy and color rendering, or struggle to balance stability and cost, and none of them fundamentally eliminate the hazards of high-energy blue light or complex color shift issues. Therefore, in some special display and indicator applications with stringent requirements for spectral quality, the industry urgently needs a new white light solution that can fundamentally optimize spectral energy distribution and combine high luminous efficacy potential with excellent color performance. Summary of the Invention

[0007] Based on this, the present invention provides a light source, including a first light-emitting chip and a second light-emitting chip that are electrically independent of each other; The first light-emitting chip emits cyan light with a peak wavelength of 470~520nm and a full width at half maximum (FWHM) of 5~35nm; The second light-emitting chip emits red light with a peak wavelength of 610~650nm and a full width at half maximum (FWHM) of 5~30nm; The first light-emitting chip and the second light-emitting chip are controlled independently; The emitted light from the light source includes: cyan light emitted only by the first light-emitting chip, red light emitted only by the second light-emitting chip, and mixed light formed by mixing the cyan and red light; the color temperature of the mixed light is adjustable in the range of 700~40000K.

[0008] Compared to existing technologies, the light source of this invention uses only two independently controlled narrow-spectrum chips. By directly mixing cyan and red light, it achieves full color temperature coverage from 700 to 40000K, completely eliminating phosphor conversion and Stokes energy loss. Simultaneously, it abandons the high-energy short-wavelength blue light of 415-465nm, avoiding blue light hazards at the source. Compared to RGB three-primary-color or multi-color phosphor solutions, this invention simplifies the driving architecture with the fewest chips, reduces the risk of color drift caused by aging mismatch, and combines high luminous efficiency, high color rendering, and excellent spectral health.

[0009] As a further preferred embodiment, the peak wavelength range of the cyan light is 482nm to 505nm, and the full width at half maximum (FWHM) range is 8nm to 30nm; the peak wavelength range of the red light is 612nm to 643nm, and the full WHM range is 5nm to 25nm.

[0010] As a further preferred embodiment, the peak wavelength of the cyan light is 485nm to 488nm, and the full width at half maximum (FWHM) is 18nm to 21nm; the peak wavelength of the red light is 626nm to 629nm, and the full WHM is 11nm to 14nm.

[0011] As a further preferred embodiment, the mixed light includes orange-red light with a color temperature of 900K~1100K, amber yellow light with a color temperature of 1500K~2000K, warm white light with a color temperature of 3000K±100K, neutral white light with a color temperature of 5000K±100K, cool white light with a color temperature of 6500K±100K, and bluish-white light with a color temperature of 8188K±100K.

[0012] As a further preferred embodiment, the color temperature of the cyan light is 40000K±1000K, and the color temperature of the red light is 732K±100K.

[0013] As a further preferred embodiment, when the color temperature of the mixed light is 1008K±100K, the energy proportion of cyan light in the mixed light is 10~25%; When the color temperature of the mixed light is 1689K±100K, the energy proportion of cyan light in the mixed light is 30~45%; When the color temperature of the mixed light is 2500K~10000K, the energy ratio of cyan light in the mixed light is 46~75%.

[0014] As a further preferred embodiment, when the color temperature of the mixed light is 3000K±100K, the energy proportion of cyan light in the mixed light is 46~58%; When the color temperature of the mixed light is 5000K±100K, the energy proportion of cyan light in the mixed light is 60.15~63.50%; When the color temperature of the mixed light is 6500K±100K, the energy proportion of cyan light in the mixed light is 64.10~67.05%; When the color temperature of the mixed light is 8188K±100K, the energy ratio of cyan light in the mixed light is 67.45~70.40%.

[0015] As a further preferred option, the first light-emitting chip is an InGaN cyan light-emitting chip with a photoelectric conversion efficiency of ≥50%, and the second light-emitting chip is an AlInGaP red light-emitting chip with a photoelectric conversion efficiency of ≥55%.

[0016] As a further preferred embodiment, the red color rendering index R9 of the mixed light is greater than 90.

[0017] The present invention also provides a light-emitting device, which is a TOP type light-emitting device, a CHIP type light-emitting device, or a CSP type light-emitting device composed of the light-emitting light source.

[0018] The present invention also provides a light source module, comprising, from bottom to top, a transparent substrate, a first optical adhesive layer, a conductive film layer, a plurality of light-emitting sources or a plurality of light-emitting devices, a second optical adhesive layer, and a transparent film layer; the light-emitting sources or the light-emitting devices are arranged in a matrix on the conductive film layer and electrically connected to the conductive film layer.

[0019] As a further preferred embodiment, the conductive film layer includes a transparent film layer and an electrode disposed above the transparent film layer, wherein the transparent film layer is a PI material and the electrode is an Ag nanomesh material.

[0020] To better understand and implement this invention, the following detailed description is provided in conjunction with the accompanying drawings. Attached Figure Description

[0021] Figure 1 This is a schematic diagram of the support structure of the TOP-type light-emitting device of the present invention.

[0022] Figure 2 for Figure 1 A schematic diagram of the bottom structure of the support for a TOP-type light-emitting device.

[0023] Figure 3 for Figure 1 A schematic diagram of the structure of a TOP-type light-emitting device after the chip is installed.

[0024] Figure 4 This is a schematic diagram of the structure of the light source module of the present invention.

[0025] Figure 5 for Figure 4 A schematic diagram of the structure of the light source module.

[0026] Figure 6 for Figure 4 The spectrum of emitted light at different color temperatures from the light source module.

[0027] Figure 7 for Figure 4 The spectrum of the 7440K white light emitted from the light source module. Detailed Implementation

[0028] Traditional white light generation technology, which uses blue light chips to excite phosphors to generate white light, suffers from Stokes loss: each converted blue photon loses approximately 0.54 eV (equivalent to a 15-20% energy loss when the wavelength changes from 450 nm to 560 nm). This is a hard upper limit determined by energy conservation, representing an insurmountable physical barrier. To avoid this loss, this invention first considers completely abandoning phosphors and using only various light-emitting chips with different luminescent properties to directly generate photons of the target wavelength through electron-hole recombination, thereby avoiding the luminous efficiency loss caused by wavelength down-conversion.

[0029] Based on this, this invention systematically studies existing white light generation technologies and discovers a deep-rooted technological bias in the field of solid-state lighting: white LEDs must use blue light chips as the core excitation source or primary color light source. This path dependence is not accidental—from a colorimetric perspective, blue light and yellow light are approximately complementary, and white light can be achieved with a single chip excitation, making it the simplest and most mature technology; from a materials physics perspective, InGaN blue light happens to be in the peak region of quantum efficiency outside this platform, while green light is limited by the green efficiency gap and has significantly lower efficiency, thus blue light becomes the efficiency anchor point for the luminous efficacy of the white light system; from a color temperature control perspective, traditional understanding holds that blue light, as the shortest primary color component in the visible spectrum, is a necessary color temperature anchor point to cover the >5000K cool white light region, and without blue light, it is difficult to achieve high color temperature white light. Therefore, both phosphor conversion schemes and RGB mixing schemes regard blue light chips around 450nm as an indispensable core component, and the industry has generally regarded the introduction of high-energy short-wavelength blue light as an unavoidable cost of white LEDs.

[0030] However, this invention recognizes that the industry consensus that white light cannot exist without blue light is essentially a path dependency that sacrifices spectral health. According to the blue light hazard weighting function B(λ) defined in the IEC 62471 standard, its peak value is located at 435-440nm, with a full width at half maximum (FWHM) of approximately 50nm, meaning an effective coverage range of approximately 415-465nm. The emission peak of traditional blue light chips (450-455nm) falls precisely at the edge of this region with extremely high hazard weighting. In traditional blue light chip excitation schemes, the 450nm blue light peak accounts for 20-30% of the total radiant energy; this peak contributes >70% of the blue light hazard weighted dose; this peak still exists at a low color temperature of 3000K (although its proportion is reduced). Therefore, long-term exposure to this type of white LED can easily lead to visual health risks such as retinal photochemical damage and melatonin secretion inhibition. Based on this, the present invention explicitly abandons the high-energy short-wave blue light chip in the 415~465nm band and no longer uses it as an excitation source or primary color light source, thus eliminating the physical source of blue light hazards from the source.

[0031] After shifting the shortest wavelength of the white light spectrum to the cyan light band, it is still necessary to ensure that the candidate chip possesses high luminous efficiency, high color rendering, and visual comfort. The data shown in Table 1 indicates that the blue light hazard weight of the cyan light chip (490-505nm) is only 1 / 27 to 1 / 5 of that of the blue light chip (450nm), suggesting that the human eye perceives cyan light more comfortably, and the light generated by cyan light is softer. Furthermore, the human eye's ipRGCs (intrinsic photosensitive retinal ganglion cells) contain melanopsin, with its absorption peak at ~480nm. The melanopsin response of the cyan light chip (505nm) has significantly decreased from the blue light peak: the melanopsin absorption rate of 450nm blue light is ~0.85 (near the peak), while the melanopsin absorption rate of 505nm cyan light is approximately 0.45 (decreasing in the right shoulder), and the melatonin inhibition intensity of blue light is approximately 2.5 times that of cyan light. Based on this, the present invention further screens candidate chips with high photoelectric conversion efficiency (WPE) and high visual efficiency (V(λ)) and systematically tests the spectral characteristics of different chip combinations.

[0032] Table 1. Comparison of blue light hazards from chips with different peak wavelengths.

[0033] On the other hand, existing technologies often tend to increase the types of light-emitting chips or phosphors (such as RGB three-color chips and multi-color phosphor conversion schemes) to improve luminous efficacy or color rendering. However, increasing the number of chips inevitably leads to more driving channels and more complex control logic. Furthermore, the aging characteristics of chips made of different materials differ significantly (for example, the junction temperature drift rate and light decay coefficient of AlInGaP red light and InGaN green / blue light in the RGB scheme can differ by more than 3 times), which will cause serious color coordinate drift. It is necessary to rely on a complex multi-channel closed-loop feedback system for compensation, which significantly increases cost and failure risk. Therefore, after excluding blue light chips, this invention further determines the principle of using the minimum number of light-emitting chips while satisfying the requirements of white light generation and color temperature coverage, and systematically screens candidate chip combinations.

[0034] During the screening process, this invention discovered that the red color rendering index (R9) is a key indicator for evaluating the ability of a light source to reproduce saturated red, and the quality of R9 directly depends on the spectral energy density of the light source in the 610-680nm wavelength range. Existing blue light chip + yellow phosphor solutions suffer from extremely low R9 due to the severe energy scarcity in this wavelength range. If the red light chip is removed, relying solely on cyan light mixed with other color chips cannot provide sufficient narrow-spectrum, high-saturation energy beyond 600nm, making it difficult to meet the R9 requirements of high-end displays, medical lighting, and other applications. Therefore, the red light chip, as an essential component for ensuring color rendering, is retained.

[0035] This invention unexpectedly discovered that by using only cyan and red light chips in binary pairing, full color temperature coverage from warm white to cool white light can be achieved. To reveal the underlying mechanism of this phenomenon, this invention conducted an in-depth analysis of the CIE 1931 chromaticity diagram and obtained a key finding: the line connecting cyan light with a peak wavelength of 470~520nm and red light with a peak wavelength of 610~650nm passes precisely through the dense region of the blackbody trajectory (3000K~6500K segment) and intersects with the blackbody trajectory in the approximately 4000~4500K region, thus achieving full coverage of 3000~6500K. This perfectly complementary colorimetric characteristic is not possessed by any two color chips—if green light (approximately 530nm) is used to mix with red light, the line will deviate from the blackbody trajectory; if yellow light (approximately 580nm) is used to mix with red light, the high color temperature region cannot be covered. Therefore, the binary combination of cyan and red light is the optimal solution that minimizes the color temperature coverage. It can achieve better long-term color stability and reliability without the need for an extremely complex feedback system, and reduce maintenance costs.

[0036] After establishing the binary color matching architecture, this invention further optimizes the spectral parameters of cyan and red light to achieve a dual breakthrough in luminous efficacy and color rendering: The cyan light used is a narrow-spectrum cyan light chip with a peak wavelength of 480~505nm and a full width at half maximum (FWHM) of 15~25nm. This band is located in the high-efficiency response region of the human eye's photopic vision function V(λ) (V(λ) value 0.25~0.50), and is also in the high electro-optical conversion efficiency region of the InGaN material platform (WPE can reach over 50%), achieving a structural alignment between material efficiency and visual efficiency; at the same time, this band is far away from the B(λ) hazard peak region, taking into account both high luminous efficiency and low blue light hazard.

[0037] The red light uses a narrow-spectrum red light chip with a peak wavelength of 610-650 nm and a full width at half maximum (FWHM) of 15-25 nm. This band is generated by direct electroluminescence from an AlInGaP quantum well, eliminating Stokes losses associated with phosphor conversion. The energy is highly concentrated, and the key reflection peaks of illuminated objects such as heme and cadmium red pigment can be precisely covered through component adjustment, easily achieving an R9 of over 90. At the same time, the light decay of the AlInGaP red light chip is typically less than 10% at a junction temperature of 85°C, and its spectral purity, intensity, and thermal stability are significantly higher than those of red light generated by phosphor conversion.

[0038] Meanwhile, this invention also re-examines the color rendering mechanism from the perspective of spectral morphology, discovering that the above design approach actually overcomes another technical bias in the field of solid-state lighting: high color rendering white light relies on a broad, continuous spectrum. For a long time, the industry has generally believed that only by increasing the number of luminescent components and broadening the emission peaks to fill the entire visible spectrum can the color rendering quality of sunlight be approximated; insufficient chip quantity or spectral gaps are often considered the root cause of color rendering degradation. This obsession with broad spectral continuity directly leads to the high complexity of multi-chip systems and the inherent loss of luminous efficiency due to phosphor conversion.

[0039] However, this invention, starting from the physical essence of color rendering, recognizes that the color rendering performance of a light source does not depend on whether the spectrum is visually continuous, but rather on whether its spectral power distribution (SPD) provides sufficient energy density in the key wavelength range of the illuminated object's reflectance. Traditional phosphor solutions appear to have a continuous spectrum, but their energy in the 630-700nm deep red region is extremely scarce, which is the fundamental reason for the extremely low R9 and red color reproduction distortion. Conversely, the narrow-spectrum cyan and narrow-spectrum red light of this invention, although exhibiting a discrete bimodal structure, precisely concentrates high-saturation energy in the photopic high-efficiency region (470-520nm) and the key red color rendering region (610-650nm), respectively, significantly improving the energy density in the most critical 600-700nm deep red region of the illuminated object.

[0040] Based on the above screening and optimization process, the present invention provides a light source, including a first light-emitting chip and a second light-emitting chip that are electrically independent of each other; The first light-emitting chip emits cyan light with a peak wavelength of 470~520nm and a full width at half maximum (FWHM) of 5~35nm; The second light-emitting chip emits red light with a peak wavelength of 610~650nm and a full width at half maximum (FWHM) of 5~30nm; The first light-emitting chip and the second light-emitting chip are controlled independently; The emitted light from the light source includes: cyan light emitted only by the first light-emitting chip, red light emitted only by the second light-emitting chip, and mixed light formed by mixing the cyan light and the red light; the color temperature of the mixed light is adjustable in the range of 700~40000K.

[0041] By adjusting the luminous state and power ratio of the first and second light-emitting chips, the light source selectively emits cyan light, red light, or mixed light formed by mixing cyan and red light.

[0042] The first light-emitting chip is an InGaN cyan light-emitting chip, and the second light-emitting chip is an AlInGaP red light-emitting chip.

[0043] In one embodiment, the peak wavelength range of the cyan light is 482~505nm, and the full width at half maximum (FWHM) range is 8~30nm; the peak wavelength range of the red light is 612~643nm, and the full WHM range is 5~25nm.

[0044] Preferably, the peak wavelength range of the cyan light is 485~488nm, and the full width at half maximum (FWHM) range is 18~21nm; the peak wavelength range of the red light is 626~629nm, and the full width at half maximum (FWHM) range is 11~14nm.

[0045] More preferably, the peak wavelength of the cyan light is 486.79 nm and the full width at half maximum (FWHM) is 19.91 nm; the peak wavelength of the red light is 627.31 nm and the full width at half maximum (FWHM) is 12.70 nm.

[0046] In one embodiment, the color temperature of the cyan light is 40000K±1000K, and the color temperature of the red light is 732K±100K.

[0047] The mixed light includes orange-red light with a color temperature of 1008K±100K, amber-yellow light with a color temperature of 1689K±100K, and white light with a color temperature of 2500K~10000K.

[0048] When the color temperature of the mixed light is 900K~1100K, the energy proportion of cyan light in the mixed light is 10~25%. Preferably, the energy proportion of cyan light in the mixed light is 12.05~20.45%, the peak wavelength of the cyan light is 476.99~496.29nm, and the full width at half maximum (FWHM) is 8.00~35.00nm, and the peak wavelength of the red light is 618.81~642.31nm, and the FWHM is 5.00~19.50nm.

[0049] When the color temperature of the mixed light is 1689K±100K, the energy proportion of cyan light in the mixed light is 30~45%. Preferably, the energy proportion of cyan light in the mixed light is 35.55~43.80%, the peak wavelength of the cyan light is 482.79~490.99nm, and the full width at half maximum (FWHM) is 8.00~35.00nm, and the peak wavelength of the red light is 612.31~635.51nm, and the FWHM is 5.00~24.30nm.

[0050] When the color temperature of the mixed light is 2500K~10000K, the energy ratio of cyan light in the mixed light is 46~75%.

[0051] In one embodiment, the white light with a color temperature of 2500K to 10000K includes warm white light with a color temperature of 3000K±100K, neutral white light with a color temperature of 5000K±100K, cool white light with a color temperature of 6500K±100K, highly cool white light with a color temperature of 7440K±100K, and bluish white light with a color temperature of 8188K±100K. Therefore, the light source of this embodiment can achieve full coverage of 3000K to 6500K by adjusting the light power ratio of bluish and red light.

[0052] When the color temperature of the mixed light is 3000K±100K, the energy proportion of cyan light in the mixed light is 46~58%. Preferably, the energy proportion of cyan light in the mixed light is 51.65~57.75%, the peak wavelength of the cyan light is 484.39~489.29nm, and the full width at half maximum (FWHM) is 9.40~35.00nm, and the peak wavelength of the red light is 615.91~633.21nm, and the FWHM is 5.00~25.00nm.

[0053] When the color temperature of the mixed light is 5000K±100K, the energy proportion of cyan light in the mixed light is 60.15~63.50%, the peak wavelength of the cyan light is 485.69~487.89nm, and the full width at half maximum (FWHM) is 14.10~32.10nm. The peak wavelength of the red light is 623.41~630.51nm, and the FWHM is 5.00~23.10nm.

[0054] When the color temperature of the mixed light is 6500K±100K, the energy proportion of cyan light in the mixed light is 64.10~67.05%, the peak wavelength of the cyan light is 485.89~487.69nm, and the full width at half maximum (FWHM) is 14.60~30.40nm. The peak wavelength of the red light is 623.91~630.21nm, and the FWHM is 5.00~23.40nm.

[0055] When the color temperature of the mixed light is 7440K±100K, the energy ratio of cyan light in the mixed light is 67~68%.

[0056] When the color temperature of the mixed light is 8188K±100K, the energy proportion of cyan light in the mixed light is 67.45~70.40%, the peak wavelength of the cyan light is 485.99~487.69nm, and the full width at half maximum (FWHM) is 14.50~31.00nm. The peak wavelength of the red light is 623.81~630.31nm, and the FWHM is 5.00~24.60nm.

[0057] In one embodiment, the first light-emitting chip is an InGaN cyan light-emitting chip with a photoelectric conversion efficiency (WPE) ≥ 50%, and the second light-emitting chip is an AlInGaP red light-emitting chip with a photoelectric conversion efficiency ≥ 55%.

[0058] In one embodiment, the red color rendering index R9 of the mixed light is greater than 90.

[0059] Preferably, the red color rendering index R9 of the mixed light with a color temperature in the range of 3000K~6500K is greater than 95.

[0060] In one embodiment, the relative weight of the blue light hazard weighting function B(λ) for cyan light is 0.02~0.16.

[0061] In one embodiment, the CS value of the mixed light at an illuminance of 100 lux and a CCT of 4000 K is 0.15 to 0.20.

[0062] In one embodiment, the illumination light emitted by the light source conforms to the following conditions in the CIE 1931 color coordinate system: the horizontal coordinate X is in the range of 0.072 to 0.692; and the vertical coordinate Y is in the range of 0.290 to 0.310.

[0063] Among them, the emitted light with a color temperature of 3000~6500K meets the following conditions in the CIE1931 color coordinate system: the horizontal coordinate X is in the range of 0.30~0.40; the vertical coordinate Y is in the range of 0.290~0.310.

[0064] One embodiment of the present invention provides a light-emitting device, which includes a light-emitting light source provided in any embodiment.

[0065] The light-emitting device can be a TOP type light-emitting device, a CHIP type light-emitting device, or a CSP type light-emitting device.

[0066] The structural schematic diagram of the TOP-type light-emitting device 10 is shown below. Figures 1-3 As shown, it includes a bracket 11, a first light-emitting chip 12, a second light-emitting chip 13 and a plurality of conductive pins 14. The top surface of the bracket is provided with a reflective cup 111, which is used to mount the first light-emitting chip 12 and the second light-emitting chip 13.

[0067] A portion of the structure of each conductive pin 14 is embedded within the support 11 to form a pad portion 141, and another portion of the structure of each conductive pin 14 extends outward from the bottom surface of the support 11 to form a pin portion 142. A portion of the surface of the pad portion 141 is exposed on the bottom surface of the reflector cup and is used for electrical connection with the light-emitting chip. The pin portion 142 extends along the depth direction of the reflector cup 111.

[0068] The plurality of conductive pins 14 are divided into two groups located on opposite sides of the bracket 11, with each group consisting of two pins. Specifically, the plurality of conductive pins 14 include conductive pins 14a and 14b spaced apart on one side of the bracket 11, and conductive pins 14c and 14d spaced apart on the opposite side of the bracket 11.

[0069] In one embodiment, conductive pins 14a and 14b are two positive pins, and conductive pins 14c and 14d are two negative pins. One end of the first light-emitting chip 12 is disposed on the pad portion 141a of the conductive pin 14a, and the other end is disposed on the pad portion 141c of the conductive pin 14c. The first light-emitting chip 12 is a flip-chip structure, or the first light-emitting chip 12 is a regular-mount structure and is connected to the pad portion 141a of the conductive pin 14a and the pad portion 141c of the conductive pin 14c respectively by bonding wires.

[0070] One end of the second light-emitting chip 13 is disposed on the pad portion 141b of the conductive pin 14b, and the other end is disposed on the pad portion 141d of the conductive pin 14d. The second light-emitting chip 13 is a flip-chip structure, or the second light-emitting chip 13 is a regular-mount structure and is connected to the pad portion 141b of the conductive pin 14b and the pad portion 141d of the conductive pin 14d respectively by bonding wires.

[0071] With the above settings, the first light-emitting chip 12 and the second light-emitting chip 13 can be controlled independently. By controlling the input current of the first light-emitting chip 12 and the second light-emitting chip 13, the purpose of mixing them into white light can be achieved.

[0072] The light-emitting device also includes an encapsulating adhesive 15, which is filled inside the reflective cup 111 to encapsulate the light-emitting chip. In this embodiment, the encapsulating adhesive can be a transparent silicone resin.

[0073] This embodiment can control the overall thickness of the light-emitting device to within 0.3mm, which is about 50% of the thickness of a typical thin packaged device (0.5~0.6mm), significantly reducing the thickness of the light-emitting device.

[0074] One embodiment of the present invention provides a light source module.

[0075] Please see Figures 4-5 The light source module includes, from bottom to top, a transparent substrate 100, a first optical adhesive layer 200, a transparent conductive film layer 300, a plurality of light-emitting light sources 400 or a plurality of light-emitting devices, a second optical adhesive layer 500 and a transparent film layer 600.

[0076] Multiple light-emitting sources 400 or multiple light-emitting devices are arranged in a matrix on the upper surface of the transparent conductive film layer 300 and are electrically connected to the transparent conductive film layer 300.

[0077] In some embodiments, the light source module directly uses a light source 400. The first light-emitting chip 410 and the second light-emitting chip 420 of the light source 400 are directly mounted on the upper surface of the transparent conductive film layer in a flip-chip or upright manner, and are electrically connected to the transparent conductive film layer respectively, so as to reduce the overall thickness of the light source module.

[0078] In some embodiments, the light source module employs a light-emitting device. A first light-emitting chip and a second light-emitting chip, disposed within the reflector cup of the light-emitting device, are electrically connected to the transparent conductive film layer 300 via corresponding conductive pins.

[0079] The transparent conductive film layer 300 includes a transparent film layer and an electrode disposed above the transparent film layer. The transparent film layer is made of PI material, and the electrode is made of Ag nanomesh material.

[0080] The first optical adhesive layer 200 and the second optical adhesive layer 500 are OCA adhesives.

[0081] The first light-emitting chip 410 is a first light-emitting chip provided in any embodiment, specifically a cyan light chip, with a peak wavelength range of 482nm to 505nm and a full width at half maximum (FWHM) range of 8nm to 30nm. The second light-emitting chip 420 is a second light-emitting chip provided in any embodiment, specifically a red light chip, with a peak wavelength range of 612nm to 643nm and a FWHM range of 5nm to 25nm.

[0082] In one specific embodiment of the present invention, the first light-emitting chip of the light source module is a cyan light chip with a peak wavelength of 480~490nm, and the second light-emitting chip is a red light chip with a peak wavelength of 620~630nm. The current ratio of the light source module was adjusted, and the output spectrum of the light source module under different current ratios was tested. The results are shown in Table 2 and... Figure 6 .

[0083] Table 2 Output spectra of the light source module at different current ratios

[0084] The spectrum of the mixed light when the color temperature of the light source module is 7440K is as follows: Figure 7 As shown.

[0085] Therefore, by adjusting the current ratio of cyan and red light, a continuous spectral evolution from red, yellow, and white light to cyan light can be achieved, thus integrating multiple lighting functions into the same LED array. In automotive lighting scenarios, the high-brightness red light mode can be used as a brake light, the yellow flashing light mode as a turn signal, the white light illumination mode as a reversing light, and the cyan warning mode as an intelligent driving assistance status indicator.

[0086] Traditional automotive lighting employs a multi-device discrete approach, requiring hardware switching between device groups to achieve mode conversion, resulting in slow response times. In reality, the carrier injection-recombination response time of LED chips is in the nanosecond range (approximately 10~100ns). The bottleneck lies not in the LED chip itself, but in the delay caused by the hardware switching in the driving circuit. In contrast, this invention utilizes a single LED array, eliminating the need for any hardware switching; light color mode conversion is achieved simply by changing the duty cycle of two PWM signals. Testing shows that when the PWM frequency of the driving circuit is set to 20kHz, the single pulse period of its output signal is only 50μs, far less than the 1ms automotive safety response threshold, fully meeting the stringent real-time requirements of automotive lighting.

[0087] Furthermore, the light source module can also be applied to vehicle-mounted starry sky ceilings, interlayer displays in vehicle windows, and other transparent display scenarios. Existing phosphor encapsulation products are limited by the thickness of the phosphor layer, making it difficult to meet the integration requirements of ultra-thin transparent displays; however, this invention directly achieves white light output with a chip-level thickness (within 100μm), significantly reducing the overall thickness of the product and breaking through the bottleneck of ultra-thin manufacturing processes while maintaining display quality.

[0088] In another specific embodiment, the first light-emitting chip of the light source module uses a cyan light chip with a peak wavelength of 500~510nm, and the second light-emitting chip uses a red light chip with a peak wavelength of 620~630nm. The CS (Circadian Stimulus) values ​​of this light source module and traditional lighting schemes (blue light chip exciting yellow phosphor to generate white light, multiple phosphors to generate white light, and RGB three-color chips mixed to generate white light) were tested at an illuminance of 100 lux and a color temperature of 4000K.

[0089] Test results show that the CS value of the light source module of this invention is 0.15~0.20, the CS value of the scheme using a blue light chip to excite yellow phosphor to generate white light is about 0.35, the CS value of the scheme using multiple phosphors to generate white light is about 0.30, and the CS value of the scheme using a mixture of RGB three-color chips to generate white light is about 0.32. This indicates that in nighttime lighting scenarios, the light source module of this invention significantly reduces the inhibitory effect on melatonin secretion.

[0090] Compared with the prior art, the light source, light-emitting device, and light source module provided in this embodiment have the following advantages: (1) The downconversion path of phosphor wavelength is completely eliminated, thus eliminating the Stokes energy loss (about 15%~20%) that is insurmountable in traditional schemes from the source. At the same time, the selected InGaN cyan chip and AlInGaP red chip both fall into the high electro-optic conversion efficiency region of their respective material systems and the high efficiency response region of human visual perception function V(λ), realizing the structural alignment of material efficiency and visual efficiency. In addition, only two independent drives are needed to complete the full color temperature coverage. Compared with the RGB three-channel scheme, the driving circuit is greatly simplified and the additional system loss is reduced, so that the overall light effect has the potential to approach the theoretical limit.

[0091] (2) The present invention uses AlInGaP quantum well direct electroluminescence to generate narrow-spectrum high-saturation red light with peak values ​​in the range of 610~650nm. The energy is highly concentrated and can be precisely covered by adjusting the composition to cover the key reflection peaks of the irradiated objects such as heme, cadmium red pigment and ruby. Compared with the traditional phosphor scheme which has extremely low energy in the deep red region of 630~700nm, the present invention provides a radiation energy density in the key wavelength band of 600~700nm that far exceeds that of the traditional scheme, so that the red color rendering index R9 can easily reach more than 90, significantly improving the realism of saturated red reproduction.

[0092] (3) The high-energy short-wave blue light chip in the 415~465nm band was abandoned, and the shortest wavelength of the white light spectrum was moved up to the cyan band of 490~505nm. This reduced the relative weight of the blue light hazard weighting function B(λ) to 1 / 27 to 1 / 5 of that of the traditional 450nm blue light, thus eliminating the physical source of blue light hazard. At the same time, this band is far away from the melanopsin absorption peak, and the stimulation of the diurnal rhythm is significantly reduced under the same brightness. The diurnal stimulation value (CS) under the conditions of 4000K and 100lux is only 0.15~0.20, which is about 40%~55% of the traditional solution. This effectively preserves the amount of melatonin secreted at night and takes into account both high light efficiency and visual biological safety.

[0093] (4) The present invention can achieve excellent long-term color stability and reliability without relying on a complex multi-channel closed-loop feedback compensation system, which significantly reduces system cost and maintenance difficulty.

[0094] (5) By independently controlling the current or PWM duty cycle of the two driving channels, the present invention can realize the continuous spectral evolution from pure red light, orange-red light, amber yellow light, warm white light, neutral white light, cool white light to pure cyan light on the same LED array, with a color temperature covering the full range of 700K~40000K; in the vehicle lighting scenario, this single device can be used as a brake light (high brightness red light), turn signal (yellow light flashing), reversing light (white light illumination) and intelligent driving assistance status indicator (cyan light prompt), and since the LED carrier response is at the nanosecond level and the driving PWM cycle is only 50μs, the light color mode switching response is much less than 1ms, and the vehicle safety real-time requirements can be met without any hardware switching.

[0095] (6) Since the present invention completely eliminates the phosphor layer and the required thick film encapsulation structure, white light output can be achieved directly with chip-level thickness (within 100μm), so that the overall thickness of the light-emitting device can be controlled within 0.3mm; at the same time, the light source or light-emitting device can be further integrated into a light source module with a thickness of only 0.7~0.8mm, which significantly breaks through the thickness bottleneck of existing phosphor encapsulation products in ultra-thin transparent display scenarios such as vehicle starry sky roof and interlayer of car window display glass.

[0096] In the description of this invention, it should be noted that directional terms such as “thickness,” “top,” “bottom,” “inner,” and “outer” indicate the orientation and positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. They should not be construed as limiting the specific protection scope of this invention.

[0097] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features. Thus, the use of "first" and "second" to define a feature may explicitly or implicitly include one or more of that feature, and in the description of this invention, "multiple" means two or more, unless otherwise explicitly specified.

[0098] The embodiments described above are merely examples of several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these modifications and improvements all fall within the scope of protection of the present invention.

Claims

1. A light source, characterized in that, It includes a first light-emitting chip and a second light-emitting chip that are electrically independent of each other; The first light-emitting chip emits cyan light with a peak wavelength of 470~520nm and a full width at half maximum (FWHM) of 5~35nm; The second light-emitting chip emits red light with a peak wavelength of 610~650nm and a full width at half maximum (FWHM) of 5~30nm; The first light-emitting chip and the second light-emitting chip are controlled independently; The emitted light from the light source includes: cyan light emitted only by the first light-emitting chip, red light emitted only by the second light-emitting chip, and mixed light formed by mixing the cyan and red light; the color temperature of the mixed light is adjustable in the range of 700~40000K.

2. The light source according to claim 1, characterized in that, The peak wavelength range of the cyan light is 482nm to 505nm, and the full width at half maximum (FWHM) range is 8nm to 30nm; the peak wavelength range of the red light is 612nm to 643nm, and the full WHM range is 5nm to 25nm.

3. The light source according to claim 2, characterized in that, The peak wavelength of the cyan light is 485nm to 488nm, and the full width at half maximum (FWHM) is 18nm to 21nm; the peak wavelength of the red light is 626nm to 629nm, and the full WHM is 11nm to 14nm.

4. The light source according to claim 1, characterized in that, The mixed light includes orange-red light with a color temperature of 900K~1100K, amber yellow light with a color temperature of 1500K~2000K, warm white light with a color temperature of 3000K±100K, neutral white light with a color temperature of 5000K±100K, cool white light with a color temperature of 6500K±100K, and bluish-white light with a color temperature of 8188K±100K.

5. The light source according to claim 4, characterized in that: The cyan light has a color temperature of 40000K±1000K, and the red light has a color temperature of 732K±100K.

6. The light source according to claim 1, characterized in that: When the color temperature of the mixed light is 1008K±100K, the energy proportion of cyan light in the mixed light is 10~25%; When the color temperature of the mixed light is 1689K±100K, the energy proportion of cyan light in the mixed light is 30~45%; When the color temperature of the mixed light is 2500K~10000K, the energy ratio of cyan light in the mixed light is 46~75%.

7. The light source according to claim 1, characterized in that, When the color temperature of the mixed light is 3000K±100K, the energy proportion of cyan light in the mixed light is 46~58%; When the color temperature of the mixed light is 5000K±100K, the energy proportion of cyan light in the mixed light is 60.15~63.50%; When the color temperature of the mixed light is 6500K±100K, the energy proportion of cyan light in the mixed light is 64.10~67.05%; When the color temperature of the mixed light is 8188K±100K, the energy ratio of cyan light in the mixed light is 67.45~70.40%.

8. The light source according to claim 1, characterized in that, The first light-emitting chip is an InGaN cyan light-emitting chip with a photoelectric conversion efficiency of ≥50%, and the second light-emitting chip is an AlInGaP red light-emitting chip with a photoelectric conversion efficiency of ≥55%.

9. The light source according to claim 8, characterized in that: The red color rendering index R9 of the mixed light is greater than 90.

10. A light-emitting device, characterized in that, The light-emitting device is a TOP-type light-emitting device, a CHIP-type light-emitting device, or a CSP-type light-emitting device composed of the light-emitting light source described in any one of claims 1 to 9.

11. A light source module, characterized in that, The device comprises, from bottom to top, a transparent substrate, a first optical adhesive layer, a conductive film layer, a light source as described in any one of claims 1 to 9 or a light-emitting device as described in claims 10, a second optical adhesive layer, and a transparent film layer; the light source or the light-emitting device is arranged in a matrix on the conductive film layer and is electrically connected to the conductive film layer.

12. The light source module according to claim 11, characterized in that: The conductive film layer includes a transparent film layer and an electrode disposed above the transparent film layer. The transparent film layer is made of PI material, and the electrode is made of Ag nanomesh material.

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