Display device

Abstract

A display device according to an exemplary embodiment of the present disclosure includes a substrate in which a plurality of subpixels each including a repair site are defined, a reflective electrode disposed in each of the plurality of subpixels, a repair electrode disposed at the repair site and electrically connected to the reflective electrode, a light emitting element disposed on the reflective electrode, a first insulating layer disposed on the reflective electrode, and a second insulating layer disposed on the repair electrode. Accordingly, each of the plurality of subpixels includes a repair site for repair, thereby minimizing defective subpixels.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2025-0056642, filed with the Korean Intellectual Property Office on April 29, 2025, the disclosure of which is incorporated herein by reference. Technical Field

[0003] The present invention relates to a display device, and more specifically, to a display device utilizing a light-emitting diode (LED). Background Technology

[0004] Display devices used for displays in computers, TVs, or mobile phones include self-emissive organic light-emitting displays (OLEDs) and liquid crystal displays (LCDs) that require a separate light source.

[0005] Display devices have been used in a variety of applications, including computer monitors, TVs, and personal portable devices, and research is underway on display devices with large display areas and reduced size and weight.

[0006] Furthermore, LED display devices have recently garnered attention as next-generation display devices. Because LEDs are made of inorganic rather than organic materials, they offer superior reliability and a longer lifespan than liquid crystal displays or organic light-emitting diode displays. In addition, LEDs feature fast illumination speed, excellent luminous efficiency, and strong shock resistance, resulting in excellent stability and the ability to display high-brightness images. Summary of the Invention

[0007] One objective of this disclosure is to provide a display device capable of repairing subpixels.

[0008] Another objective of this disclosure is to provide a display device in which subpixel defects are minimized.

[0009] Another objective of this invention is to provide a display device in which the light-emitting element is directly connected to the electrode.

[0010] Another objective of this invention is to provide a display device in which a light-emitting element is deposited in an insulating layer to be connected to an electrode.

[0011] Another objective of this invention is to provide a display device in which the light extraction efficiency of the light-emitting element is improved.

[0012] Another objective of this invention is to provide a display device for easily fixing a light-emitting element transferred to a display panel.

[0013] The purpose of this disclosure is not limited to the purposes described above, and other purposes not mentioned above may be clearly understood by those skilled in the art from the following description.

[0014] An exemplary embodiment of the present disclosure includes: a substrate defining a plurality of sub-pixels, each including a repair site; a reflective electrode disposed in each of the plurality of sub-pixels; a repair electrode disposed at a repair site and electrically connected to the reflective electrode; a light-emitting element disposed on the reflective electrode; a first insulating layer disposed on the reflective electrode and the repair electrode and in contact with at least a portion of the light-emitting element; and a second insulating layer disposed on the repair electrode in at least a portion of the plurality of sub-pixels, the first insulating layer opening at the repair site to expose the repair electrode, and the second insulating layer in contact with the repair electrode. Therefore, each of the plurality of sub-pixels includes a repair site for repair, thereby minimizing the number of defective sub-pixels.

[0015] A display device according to another exemplary embodiment of the present disclosure includes: a substrate defining a plurality of sub-pixels, wherein at least a portion of the plurality of sub-pixels includes a light-emitting element and an additional light-emitting element, wherein each of the at least a portion of the sub-pixels includes: a reflective electrode disposed on the substrate; a repair electrode electrically connected to the reflective electrode; a light-emitting element disposed on the reflective electrode; an additional light-emitting element disposed on the repair electrode; a first insulating layer disposed on the reflective electrode; and a second insulating layer disposed on the first insulating layer, wherein the second insulating layer is in contact with the repair electrode.

[0016] Further details of the embodiments are included in the detailed description and the accompanying drawings.

[0017] According to this disclosure, a repair area is formed in the sub-pixel, making it easy to repair defective sub-pixels.

[0018] According to this disclosure, in the welding process for connecting the light-emitting element and the reflective electrode, the light-emitting element can be easily moved toward the reflective electrode.

[0019] According to this disclosure, during the welding process, the light-emitting element is deposited in the insulating layer to facilitate the connection between the light-emitting element and the reflective electrode below the insulating layer.

[0020] According to this disclosure, light extraction efficiency can be improved by forming a reflective electrode with a cup-shaped structure.

[0021] According to this disclosure, the welding process can be performed simultaneously with fixing the light-emitting element.

[0022] The effects of this disclosure are not limited to those illustrated above, and many more effects are included in this disclosure. Attached Figure Description

[0023] The above and other aspects, features and advantages of this disclosure will become clearer from the following detailed description taken in conjunction with the accompanying drawings, in which: Figure 1 This is a schematic block diagram of a display device according to exemplary embodiments of the present disclosure.

[0024] Figure 2 This is a partial cross-sectional view of a display device according to an exemplary embodiment of the present disclosure.

[0025] Figure 3 and Figure 4 This is a cross-sectional view of a sub-pixel of a display device according to an exemplary embodiment of the present disclosure.

[0026] Figure 5A and Figure 5B This is a view for explaining a method of repairing sub-pixels of a display device according to exemplary embodiments of the present disclosure.

[0027] Figure 6 and Figure 7 This is a cross-sectional view of a sub-pixel of a display device according to another exemplary embodiment of the present disclosure.

[0028] Figure 8 and Figure 9 This is a cross-sectional view of a sub-pixel of a display device according to yet another exemplary embodiment of the present disclosure. Detailed Implementation

[0029] The advantages and features of this disclosure, as well as methods for achieving such advantages and features, will become clear from the exemplary embodiments described in detail below with reference to the accompanying drawings. However, this disclosure is not limited to the exemplary embodiments disclosed herein, but will be implemented in various forms. The exemplary embodiments are provided by way of example only so that those skilled in the art can fully understand the disclosure and scope of this disclosure.

[0030] The shapes, dimensions, ratios, angles, quantities, etc., illustrated in the accompanying drawings used to describe exemplary embodiments of this disclosure are merely examples, and this disclosure is not limited thereto. Furthermore, in the following description of this disclosure, detailed explanations of known related technologies may be omitted to avoid unnecessarily obscuring the subject matter of this disclosure. Terms such as “comprising,” “having,” and “including” as used herein are generally intended to allow for the addition of additional components, unless the term is used in conjunction with the term “only.” Any reference to the singular may include the plural unless explicitly stated otherwise.

[0031] Even without explicit explanation, components are interpreted as including the normal tolerance range.

[0032] When using terms such as “above,” “over,” “below,” and “adjacent” to describe the positional relationship between two parts, one or more parts may be located between the two parts, unless the term is used with the terms “immediately adjacent” or “directly.”

[0033] When one element or layer is placed "on" another element or layer, another layer or element can be directly inserted onto or between that other element.

[0034] Although the terms "first," "second," etc., are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from other components. Therefore, the first component referred to below may be the second component in the technical concept of this disclosure.

[0035] The same reference numerals generally denote the same elements throughout the disclosure.

[0036] The dimensions and thicknesses of each component illustrated in the accompanying drawings are for ease of description and this disclosure is not limited to the dimensions and thicknesses of the illustrated components.

[0037] The features of the various embodiments of this disclosure may be combined or integrated with each other in part or in whole, and may be associated and operated in a variety of technical ways, and the embodiments may be implemented independently of each other or in relation to each other.

[0038] The present disclosure will be described in detail below with reference to the accompanying drawings.

[0039] Figure 1 This is a schematic block diagram of a display device according to exemplary embodiments of the present disclosure. Figure 2 This is a partial cross-sectional view of a display device according to an exemplary embodiment of the present disclosure. Figure 1 For ease of description, among the various components of the display device 100, only the display panel PN, gate driver GD, data driver DD, and timing controller TC are shown.

[0040] Reference Figure 1 The display device 100 includes a display panel PN having multiple sub-pixels SP, a gate driver GD and a data driver DD supplying various signals to the display panel PN, and a timing controller TC controlling the gate driver GD and the data driver DD.

[0041] The gate driver GD supplies multiple scan signals to multiple scan lines SL based on multiple gate control signals provided by the timing controller TC. Figure 1 A gate driver GD is shown configured to be spaced apart from one side of the display panel PN. However, the number and arrangement of gate drivers GDs are not limited to this.

[0042] The data driver DD supplies data voltage to multiple data lines DL based on multiple data control signals and image data provided by the timing controller TC. The data driver DD can also use a reference gamma voltage to convert image data into data voltage and supply the converted data voltage to multiple data lines DL.

[0043] The timing controller TC arranges the image data input from the outside and supplies the image data to the data driver DD. The timing controller TC can generate gate control signals and data control signals by utilizing synchronization signals input from the outside (e.g., dot clock signals, data enable signals, and horizontal / vertical synchronization signals). Furthermore, the timing controller TC supplies the generated gate control signals and data control signals to the gate driver GD and the data driver DD, respectively, to control the gate driver GD and the data driver DD.

[0044] The display panel PN is configured to display an image to the user and includes multiple subpixels SP. In the display panel PN, multiple scan lines SL and multiple data lines DL can intersect each other, and multiple subpixels SP can be formed at the intersection of scan lines SL and data lines DL.

[0045] In the display panel PN, there can be a display area AA and a non-display area NA.

[0046] The display area AA is the area in the display device 100 where an image is displayed. Within the display area AA, multiple sub-pixels SP constituting multiple pixels and pixel circuitry for driving the multiple sub-pixels SP can be provided. The multiple sub-pixels SP are the smallest units constituting the display area AA, and n sub-pixels SP can form one pixel. Circuitry for driving multiple light-emitting elements 120 can be provided in each of the multiple sub-pixels SP. The multiple light-emitting elements 120 can be defined differently depending on the type of the display panel PN. For example, when the display panel PN is an inorganic light-emitting display panel PN, the light-emitting elements 120 can be light-emitting elements (LEDs) or micro LEDs.

[0047] Within the display area AA, multiple signal lines are provided for transmitting various signals to multiple sub-pixels SP. For example, these signal lines may include multiple data lines DL supplying data voltage to each of the multiple sub-pixels SP, and multiple scan lines SL supplying scan signals to each of the multiple sub-pixels SP. The multiple scan lines SL may extend along one direction within the display area AA and connect to the multiple sub-pixels SP, while the multiple data lines DL may extend along a direction different from that direction within the display area AA and connect to the multiple sub-pixels SP. Furthermore, power lines PL, reference lines, etc., may be further provided within the display area AA, but are not limited to these.

[0048] The non-display area NA is the area where no image is displayed and can be defined as the area extending from the display area AA. Within the non-display area NA, there may be link lines and pad electrodes for transmitting signals to the sub-pixels SP of the display area AA, or driver ICs such as gate driver ICs or data driver ICs. The non-display area NA may be located on the back side of the display panel PN (i.e., the surface on which no sub-pixels SP are disposed) or may be omitted, and is not limited to what is shown in the figure.

[0049] On the other hand, drivers such as gate driver GD, data driver DD, and timing controller TC can be connected to the display panel PN in various ways. For example, the gate driver GD can be installed in the non-display area NA as a gate in panel (GIP), or installed in the display area AA between multiple sub-pixels SP as a gate in display area (GIA).

[0050] For example, the data driver DD and the timing controller TC can be formed on separate flexible films and printed circuit boards. Furthermore, the display panel PN, data driver DD, and timing controller TC can be electrically connected by bonding the flexible film and printed circuit board to pad electrodes formed in the non-display area NA of the display panel PN.

[0051] As another example, when the gate driver GD is mounted in the display area AA in a GIA configuration, the flexible film and printed circuit board can be bonded to the back of the display panel PN, forming a side line SRL that connects the signal lines on the front of the display panel PN to the pad electrodes on the back of the display panel PN. Therefore, the non-display area NA on the front of the display panel PN can be minimized. Thus, when the gate driver GD, data driver DD, and timing controller TC are connected to the display panel PN in the manner described above, a virtually bezel-less design can be achieved.

[0052] In the non-display area NA of the display panel PN, multiple pad electrodes are provided for transmitting various signals to multiple sub-pixels SP. For example, a first pad electrode PAD1 for transmitting signals to multiple sub-pixels SP is provided on the front side of the display panel PN in the non-display area NA, and a second pad electrode PAD2 electrically connected to driving components such as flexible films and printed circuit boards is provided on the back side of the display panel PN in the non-display area NA.

[0053] In this case, although not shown in the figure, various signal lines (e.g., scan lines SL or data lines DL) connected to multiple sub-pixels SP extend from the display area AA to the non-display area NA to be electrically connected to the first pad electrode PAD1.

[0054] Furthermore, a side line SRL is provided along the side surface of the display panel PN. The side line SRL electrically connects the first pad electrode PAD1 on the front side of the display panel PN to the second pad electrode PAD2 on the back side of the display panel PN. Therefore, signals from the driving components on the back side of the display panel PN can be transmitted to multiple sub-pixels SP through the second pad electrode PAD2, the side line SRL, and the first pad electrode PAD1. Thus, a signal transmission path is formed from the front side of the display panel PN to the side surface and the back side, minimizing the area of ​​the non-display area NA on the front side of the display panel PN.

[0055] Therefore, by using the side line SRL to connect the driving component to the back of the display panel PN, the area of ​​the non-display area NA is reduced, and the display device 100 is realized with a minimized bezel. Furthermore, when multiple display devices 100 with minimized bezels are arranged to form a splicing display device, the seam area between the display devices 100 where no image is displayed is minimized to improve display quality.

[0056] In the following text, reference will be made to Figures 3 to 6 The sub-pixels SP of the display device 100 according to exemplary embodiments of the present disclosure will be described in more detail.

[0057] Figure 3 and Figure 4 This is a cross-sectional view of a sub-pixel of a display device according to an exemplary embodiment of the present disclosure. Figure 5A and Figure 5B This is a view for explaining a method of repairing sub-pixels of a display device according to exemplary embodiments of the present disclosure. Specifically, Figure 3 This is a cross-sectional view of a subpixel SP that has not undergone a repair process among multiple subpixel SPs. Figure 4 This is a cross-sectional view of a subpixel SP that has undergone a repair process among multiple subpixel SPs.

[0058] Refer to together Figure 1 and Figure 3 The substrate 110 is a component that supports other parts of the display device 100 and may be an insulating substrate 110. For example, the substrate 110 may be made of glass, resin, etc. Furthermore, the substrate 110 may be made of polymer, plastic, etc., and in some embodiments, the substrate 110 may be made of a flexible plastic material. Multiple sub-pixels SP may be formed on the substrate 110 to display images.

[0059] A light-shielding layer BSM is disposed on the substrate 110 in each of the plurality of sub-pixels SP. The light-shielding layer BSM can block light incident on the active layer ACT of the driving transistor DT to minimize leakage current. For example, the light-shielding layer BSM is disposed below the active layer ACT of the driving transistor DT to block light incident on the active layer ACT. If light shines on the active layer ACT, leakage current is generated, which may reduce the reliability of the driving transistor DT. Therefore, the light-shielding layer BSM for blocking light is disposed on the substrate 110 to improve the reliability of the driving transistor DT. The light-shielding layer BSM can be made of an opaque conductive material such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or alloys thereof, but is not limited thereto.

[0060] A buffer layer 111 is disposed on the substrate 110 and the light-shielding layer BSM. The buffer layer 111 is configured to cover one surface of the substrate 110 to reduce the penetration of moisture or impurities through the substrate 110. For example, the buffer layer 111 may be configured to be made of silicon oxide (SiO2). x ) or silicon nitride (SiN) x It may be a single layer or multiple layers made of substrate 110, but is not limited thereto. Depending on the type of substrate 110 or the type of transistor, the buffer layer 111 may be omitted, but is not limited thereto.

[0061] A driving transistor DT is disposed on the buffer layer 111 in each of the plurality of sub-pixels SP. The driving transistor DT includes an active layer ACT, a gate GE, a source SE, and a drain DE. On the other hand, although not shown in the figures, other components such as switching transistors, sensing transistors, light-emitting control transistors, and storage capacitors may be additionally disposed in each of the plurality of sub-pixels SP in addition to the driving transistor DT.

[0062] The active layer ACT of the driving transistor DT is disposed on the buffer layer 111. The active layer ACT may be configured to overlap with the light-shielding layer BSM. The active layer ACT may be formed of a semiconductor material such as oxide semiconductor, amorphous silicon, or polycrystalline silicon, but is not limited thereto. Furthermore, although not shown in the figure, the active layer ACT of other transistors such as switching transistors, sensing transistors, and light-emitting control transistors may also be formed of a semiconductor material such as oxide semiconductor, amorphous silicon, or polycrystalline silicon, but is not limited thereto. In addition, the active layer ACT of the driving transistor DT, switching transistor, sensing transistor, and light-emitting control transistor may be formed of the same material or different materials.

[0063] A gate insulating layer 112 is disposed on the active layer ACT. The gate insulating layer 112 is an insulating layer that insulates the active layer ACT from the gate GE. For example, the gate insulating layer 112 can be made of silicon oxide (SiO2). x ) or silicon nitride (SiN) xIt may be a single layer or a double layer, but is not limited thereto. In this case, even if the gate insulating layer 112 is shown in the figures as being disposed only below the gate GE, the gate insulating layer 112 may be disposed on the entire surface of the substrate 110, but is not limited thereto.

[0064] The gate GE is disposed on the gate insulating layer 112. The gate GE may be configured to overlap with the active layer ACT. The gate GE may be made of a conductive material such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or alloys thereof, but is not limited thereto.

[0065] First interlayer insulating layer 113 and second interlayer insulating layer 114 are disposed on the gate GE. Contact holes are formed in the first interlayer insulating layer 113 and second interlayer insulating layer 114, through which the source SE and drain DE are connected to the active layer ACT. The first interlayer insulating layer 113 and second interlayer insulating layer 114 are insulating layers protecting the components beneath them, and may be made of silicon nitride (SiO2). x ) or silicon nitride (SiN) x It may consist of a single or double layer, but is not limited to this.

[0066] The source electrode SE and drain electrode DE are disposed on the second interlayer insulating layer 114. The source electrode SE and drain electrode DE can be electrically connected to the active layer ACT through contact holes formed in the first interlayer insulating layer 113, the second interlayer insulating layer 114, and the gate insulating layer 112. Either the source electrode SE or the drain electrode DE can be electrically connected to the light-emitting element 120. For example, either the source electrode SE or the drain electrode DE can supply driving current to the light-emitting element 120 through the first reflective electrode RE. The source electrode SE and the drain electrode DE can be made of conductive materials such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or alloys thereof, but are not limited thereto.

[0067] A conductive layer CL is disposed on the gate insulating layer 112. The conductive layer CL is an electrode for applying a constant voltage to the light-shielding layer BSM, and can be electrically connected to the light-shielding layer BSM through contact holes in the gate insulating layer 112 and the buffer layer 111. For example, the light-shielding layer BSM is connected to the conductive layer CL so that it does not operate as a floating gate, and can prevent threshold voltage fluctuations in the driving transistor DT caused by the floating light-shielding layer BSM. The conductive layer CL can be made of conductive materials such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or alloys thereof, but is not limited thereto.

[0068] A power line PL is disposed on the second interlayer insulating layer 114. The power line PL can be configured to deliver a power supply voltage to the light-emitting elements 120 of multiple sub-pixels SP. The power line PL can be made of a conductive material such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or alloys thereof, but is not limited thereto. The power line PL can be electrically connected to the multiple light-emitting elements 120 via a second reflective electrode RE. Depending on the configuration of the pixel circuit, the power line PL can be configured as a low-potential power line PL or a high-potential power line PL.

[0069] A passivation layer 115 is disposed on the driving transistor DT, the power line PL, and the second interlayer insulating layer 114. The passivation layer 115 is an insulating layer that protects the components beneath it. For example, the passivation layer 115 may be configured to be made of silicon oxide (SiO2). x ) or silicon nitride (SiN) x It can be made of a single layer or multiple layers, but is not limited to this.

[0070] A planarization layer 116 is disposed on the passivation layer 115. The planarization layer 116 can planarize the upper part of the pixel circuitry including the driving transistor DT. For example, the planarization layer 116 can be configured as a single layer or multiple layers and made of benzocyclobutene or an acrylic-based organic material. However, this disclosure is not limited thereto.

[0071] A reflective electrode RE is disposed on the planarization layer 116 in each of the plurality of sub-pixels SP. The reflective electrode RE is an electrode that reflects light emitted from the light-emitting element 120 toward the upper side of the substrate 110 and electrically connects the light-emitting element 120 and the driving transistor DT. The reflective electrode RE may be a reflective plate that reflects light from the light-emitting element 120 that has been guided toward the substrate 110 toward the upper side of the light-emitting element 120. In addition, the reflective electrode RE may be an electrode for electrically connecting the driving transistor DT and the light-emitting element 120 to each other.

[0072] Considering light reflection efficiency and resistance, the reflective electrode RE can include various conductive layers. For example, the reflective electrode RE can include a transparent conductive layer such as indium tin oxide (ITO) in an opaque conductive layer such as silver (Ag), aluminum (Al), or an alloy thereof, but the configuration of the first reflective electrode RE is not limited to this.

[0073] The repair electrode RPE is disposed at the repair site RS of each of the multiple sub-pixels SP. The repair electrode RPE is an electrode used to electrically connect the additional light-emitting element 130 and the driving transistor DT. The repair electrode RPE can be disposed on the planarization layer 116. The repair electrode RPE can extend from the reflective electrode RE and can be integrally formed with the reflective electrode RE.

[0074] Light-emitting element 120 is disposed on reflective electrode RE in each of the plurality of sub-pixels SP. Light-emitting element 120 is an inorganic light-emitting element that emits light by driving current. Light-emitting element 120 may be a light-emitting diode (LED) or a micro light-emitting diode (micro LED), but the exemplary embodiments of this disclosure are not limited thereto.

[0075] The light-emitting element 120 includes a first semiconductor layer 121, a light-emitting layer 122, a second semiconductor layer 123, a first electrode 124, and a second electrode 125.

[0076] A first semiconductor layer 121 is disposed on the reflective electrode RE, and a second semiconductor layer 123 is disposed on the first semiconductor layer 121. The first semiconductor layer 121 and the second semiconductor layer 123 can be semiconductor layers doped with p-type and n-type impurities. For example, the first semiconductor layer 121 and the second semiconductor layer 123 can be layers doped with n-type and p-type impurities in materials such as gallium nitride (GaN), indium aluminum phosphide (InAlP), or gallium arsenide (GaAs). The p-type impurity can be magnesium (Mg), zinc (Zn), beryllium (Be), etc., and the n-type impurity can be silicon (Si), germanium (Ge), tin (Sn), etc., but are not limited thereto.

[0077] A light-emitting layer 122 is disposed between a first semiconductor layer 121 and a second semiconductor layer 123. The light-emitting layer 122 can emit light based on a driving current supplied to the light-emitting element 120. For example, the light-emitting layer 122 can have a single-layer or multiple quantum well (MQW) structure. For example, the light-emitting layer 122 can be formed of indium gallium nitride (InGaN) or gallium nitride (GaN), but is not limited thereto.

[0078] The first electrode 124 is disposed below the first semiconductor layer 121. The first electrode 124 can contact the lower surface of the first semiconductor layer 121. The first electrode 124 is an electrode for electrically connecting the light-emitting element 120 to the reflective electrode RE and the driving transistor DT. The light-emitting element 120 can be electrically connected to the driving transistor DT through the first electrode 124 and the reflective electrode RE. The first electrode 124 can be formed of an opaque conductive material such as titanium (Ti), gold (Au), silver (Ag), copper (Cu) or alloys thereof, a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), or a combination of opaque conductive materials and transparent conductive materials, but is not limited thereto.

[0079] The second electrode 125 is disposed on the second semiconductor layer 123. The second electrode 125 can contact the upper surface of the second semiconductor layer 123. The second electrode 125 is an electrode for electrically connecting the light-emitting element 120 to the power line PL. The light-emitting element 120 can be electrically connected to the power line PL through the second electrode 125 and the common electrode CE. The second electrode 125 can be made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), but is not limited thereto.

[0080] On the other hand, although not shown in the accompanying drawings, a protective film may be configured to surround the first semiconductor layer 121, the light-emitting layer 122, and the second semiconductor layer 123. The protective film can protect the first semiconductor layer 121, the light-emitting layer 122, and the second semiconductor layer 123. For example, the protective film may be made of materials such as silicon oxide (SiO2). x ) or silicon nitride (SiN) x Insulating materials are formed, but not limited to these.

[0081] A solder pattern SD is disposed between the light-emitting element 120 and the reflective electrode RE. The solder pattern SD can connect the light-emitting element 120 and the reflective electrode RE. After the light-emitting element 120, on which the solder pattern SD is formed, is placed on the top surface of the reflective electrode RE, the temperature is increased to melt the solder pattern SD, so that the light-emitting element 120 can be bonded to the reflective electrode RE. The solder pattern SD can be reflowed and dispersed around the light-emitting element 120 during the melting process. For example, the solder pattern SD can be made of indium (In), tin (Sn), or alloys thereof, but is not limited thereto.

[0082] A first insulating layer 117a is disposed on the reflective electrode RE. The first insulating layer 117a may be formed on the front surface of the substrate 110 to fix the light-emitting element 120 disposed on the first insulating layer 117a. The first insulating layer 117a may be configured to cover the lower part of the light-emitting element 120 and the solder pattern SD. The first insulating layer 117a may be configured to surround at least a portion of the first electrode 124 and the first semiconductor layer 121 of the structure of the light-emitting element 120, and may not be disposed on the repair electrode RPE. For example, the first insulating layer 117a may be composed of any one of the following: adhesive polymer, epoxy resist, UV resin, polyimide, acrylate, polyurethane, and polydimethylsiloxane (PDMS), but is not limited thereto.

[0083] The first insulating layer 117a can temporarily fix the light-emitting element 120 during the soldering process of melting and bonding the solder pattern SD. For example, after coating the entire surface of the substrate 110 with the material of the first insulating layer 117a, the first insulating layer 117a can be temporarily cured. Subsequently, after transferring the light-emitting element 120 formed on the solder pattern SD onto the first insulating layer 117a, the fluidity of the first insulating layer 117a can be increased when the temperature is increased. For example, when the temperature of the first insulating layer 117a increases to 200 degrees, the fluidity of the first insulating layer 117a increases, allowing the light-emitting element 120 to sink below the first insulating layer 117a. The light-emitting element 120 and the solder pattern SD can descend into the first insulating layer 117a with increased fluidity and can be disposed on the top surface of the reflective electrode RE. That is, the light-emitting element 120 and the solder pattern SD can sink below the first insulating layer 117a. Therefore, the first insulating layer 117a can be formed of an organic material whose fluidity increases between 100 and 200 degrees.

[0084] Furthermore, the temperature can be further increased to melt the solder pattern SD. For example, the temperature can be increased to approximately 210 to 260 degrees Celsius to melt the solder pattern SD. The reflowed solder pattern SD is distributed around the light-emitting element 120, and the light-emitting element 120 can be connected to the reflective electrode RE. At this time, pressure is applied during the soldering process to more stably connect the light-emitting element 120 to the reflective electrode RE.

[0085] Finally, the first insulating layer 117a can be cured to fix the light-emitting element 120. Therefore, the light-emitting element 120 transferred onto the first insulating layer 117a can be electrically connected to the reflective electrode RE below the first insulating layer 117a by gradually increasing the temperature, and the light-emitting element 120 can be fixed to the first insulating layer 117a.

[0086] A second insulating layer 117b is disposed on the first insulating layer 117a and the light-emitting element 120. The second insulating layer 117b may be formed on the entire surface of the substrate 110 to fix the light-emitting element 120. The second insulating layer 117b may be configured to cover a portion of the side surface and the top surface of the light-emitting element 120. The second insulating layer 117b may be configured as at least a portion of the second semiconductor layer 123 surrounding the structure of the light-emitting element 120. However, in order to connect the light-emitting element 120 to the common electrode CE, at least a portion of the second electrode 125 may be exposed from the second insulating layer 117b. For example, the second insulating layer 117b may be composed of any one of the following, but is not limited to: adhesive polymer, epoxy resist, UV resin, polyimide-based, acrylate-based, polyurethane-based, and polydimethylsiloxane (PDMS).

[0087] Furthermore, each of the first insulating layer 117a and the second insulating layer 117b that temporarily fixes the light-emitting element 120 and the additional light-emitting element 130 before the welding process can also be referred to as the first adhesive layer and the second adhesive layer.

[0088] Next, a common electrode CE is disposed on the second insulating layer 117b. The common electrode CE is an electrode used to electrically connect the light-emitting element 120 to the power line PL. The common electrode CE can be electrically connected to the power line PL through contact holes in the first insulating layer 117a, the second insulating layer 117b, the planarization layer 116, and the passivation layer 115. The common electrode CE can also be electrically connected to the second electrode 125 of the light-emitting element 120 exposed from the second insulating layer 117b.

[0089] A protective film 118 is disposed on the common electrode CE. The protective film 118 protects the configuration beneath it. Furthermore, the protective film 118 can provide a flat surface on the common electrode CE. The protective film 118 can be formed from any of organic or inorganic insulating materials.

[0090] A black matrix BM is disposed on the protective film 118. The black matrix BM can block light from each of the multiple sub-pixels SP so that they do not mix with each other. In addition, the black matrix BM absorbs light incident on the display device 100 from the outside, thereby minimizing the reduction in visibility due to reflection of external light from the internal configuration of the display device 100. For example, the black matrix BM includes a black component and can be formed from an organic material such as an opaque resin including pigments, but is not limited thereto.

[0091] The black matrix BM includes a first opening OA1 and a second opening OA2 that overlap with each of the plurality of sub-pixels SP. The first opening OA1 may overlap with the light-emitting element 120. Light from the light-emitting element 120 can propagate toward the outside of the display device 100 through the first opening OA1. The second opening OA2 may overlap with the repair portion RS. Each of the plurality of sub-pixels SP may include the repair portion RS. When repairing a defective sub-pixel SP, an additional light-emitting element 130 may be transferred to the defective sub-pixel SP, and the repair portion RS is the area in which the additional light-emitting element 130 is disposed.

[0092] Reference Figure 4 In a portion of the multiple sub-pixels SP that have already undergone the repair process, an additional light-emitting element 130 is disposed on the repair electrode RPE. The additional light-emitting element 130 may be disposed on the repair electrode RPE of the repaired area RS.

[0093] Similar to the light-emitting element 120, the additional light-emitting element 130 can be a light-emitting diode (LED) or a micro light-emitting diode (micro LED).

[0094] The additional light-emitting element 130 includes a first additional semiconductor layer 131, an additional light-emitting layer 132, a second additional semiconductor layer 133, a first additional electrode 134, and a second additional electrode 135. Each of the first additional semiconductor layer 131, the additional light-emitting layer 132, the second additional semiconductor layer 133, the first additional electrode 134, and the second additional electrode 135 of the additional light-emitting element 130 may be substantially the same as the first semiconductor layer 121, the light-emitting layer 122, the second semiconductor layer 123, the first electrode 124, and the second electrode 125 of the light-emitting element 120.

[0095] A solder pattern SD is disposed between the additional light-emitting element 130 and the repair electrode RPE. The solder pattern SD can connect the additional light-emitting element 130 and the repair electrode RPE. After the additional light-emitting element 130 with the solder pattern SD formed underneath is transferred to the repair area RS, the temperature is increased to melt the solder pattern SD, so that the additional light-emitting element 130 can be bonded to the repair electrode RPE.

[0096] Reference Figure 5A and 5B After detecting a defective subpixel SP among multiple subpixels SP, an additional light-emitting element 130 is transferred to repair the defective subpixel SP.

[0097] First, after transferring the light-emitting element 120, defective sub-pixels SP can be detected. For example, defective sub-pixels SP in which a failure to transfer the light-emitting element 120 or an alignment error of the light-emitting element 120 can be detected.

[0098] Reference Figure 5A After detecting the defective sub-pixel SP, the additional light-emitting element 130 with the solder pattern SD can be transferred onto the second insulating layer 117b in a temporarily cured state. At this time, the first insulating layer 117a, which temporarily fixes the light-emitting element 120, is cured during the curing process of the first insulating layer 117a, preventing the additional light-emitting element 130 from settling therein. Therefore, when forming the first insulating layer 117a, the first insulating layer 117a can be patterned so that it is not disposed on the repair electrode RPE located at the repair site RS, or a portion of the first insulating layer 117a overlapping the repair site RS can be removed before forming the second insulating layer 117b. Therefore, the second insulating layer 117b can cover and contact the repair electrode RPE located at the repair site RS.

[0099] Refer to together Figure 5BAfter the additional light-emitting element 130 is transferred onto the second insulating layer 117b, the temperature of the second insulating layer 117b is increased to enhance its fluidity. Therefore, the solder pattern SD and the additional light-emitting element 130 can descend into the second insulating layer 117b and be disposed on the top surface of the repair electrode RPE. Furthermore, the additional light-emitting element 130 can be bonded to the repair electrode RPE by melting and reflowing the solder pattern SD during a soldering process. In this case, pressure is applied to the additional light-emitting element 130 during the soldering process to more firmly attach it to the repair electrode RPE. For this purpose, the second insulating layer 117b can be formed of an organic material with increased fluidity between 100 and 200 degrees Celsius. The second insulating layer 117b can be formed of the same material as the first insulating layer 117a, but is not limited to this.

[0100] Finally, the second insulating layer 117b can be cured to fix and protect the additional light-emitting element 130. Therefore, by increasing the fluidity of the second insulating layer 117b and allowing the additional light-emitting element 130 to sink below the second insulating layer 117b, the additional light-emitting element 130 can be connected to the repair electrode RPE.

[0101] Therefore, in the display device 100 according to an exemplary embodiment of the present disclosure, a repair portion RS is formed in each of the plurality of sub-pixels SP, through which an additional light-emitting element 130 can be transferred, so as to minimize the number of defective sub-pixels SP. A repair electrode RPE may be formed at the repair portion RS to electrically connect the additional light-emitting element 130 and the driving transistor DT to each other. Furthermore, a second opening OA2 overlapping the repair portion RS is formed in the black matrix BM to transmit light from the additional light-emitting element 130 to the outside of the display device 100.

[0102] Furthermore, in the display device 100 according to an exemplary embodiment of the present disclosure, the fluidity of the first insulating layer 117a and the second insulating layer 117b can be improved during the process of increasing the temperature to perform the welding process. By doing so, the light-emitting element 120 can be moved to the reflective electrode RE, and the additional light-emitting element 130 can be moved to the repair electrode RPE. That is, the welding process and the transfer of the light-emitting element 120 can be performed simultaneously. During the process of increasing the temperature, the process of placing the light-emitting element 120 on the reflective electrode RE and the repair process can be performed together, so that separate processes are not required and the structure of the display device 100 can be simplified. In addition, since the welding process is performed while the light-emitting element 120 is fixed to the first insulating layer 117a and the additional light-emitting element 130 is fixed to the second insulating layer 117b, poor connection can be minimized. Therefore, the light-emitting element 120 and the additional light-emitting element 130 can be directly connected to each of the reflective electrode RE and the repair electrode RPE below the first insulating layer 117a, thereby simplifying the connection structure of the light-emitting element 120 and the additional light-emitting element 130 with the reflective electrode RE and the repair electrode RPE.

[0103] Figure 6 and Figure 7 This is a cross-sectional view of a sub-pixel of a display device according to another exemplary embodiment of the present disclosure. Specifically, Figure 6 This is a cross-sectional view of a subpixel SP that has not undergone a repair process among multiple subpixel SPs. Figure 7 This is a cross-sectional view of a sub-pixel SP in which the repair process has been performed among multiple sub-pixel SPs. Apart from the protrusion 616a of the second planarization layer 616 and the configuration of the repair electrode RPE, Figure 6 and Figure 7 The display device 600 in the middle is configured with Figures 1 to 5B The display device 100 is substantially the same. Therefore, repeated descriptions of the same components will be omitted.

[0104] Reference Figure 6 The second planarization layer 616 includes a plurality of protrusions 616a. The plurality of protrusions 616a are portions protruding from the top surface of the second planarization layer 616. The plurality of protrusions 616a may be configured to overlap with the edges of the first opening OA1 and the second opening OA2 of the black matrix BM. The plurality of protrusions 616a may be configured to surround the area where the light-emitting element 120 is disposed and the repair portion RS.

[0105] A reflective electrode RE can be disposed on a second planarization layer 616 including multiple protrusions 616a. The portion of the reflective electrode RE covering the multiple protrusions 616a can be located on the side of the light-emitting element 120 and will reflect light guided in the lateral direction toward the upper side of the substrate 110. The reflective electrode RE can be disposed along the top surface of the second planarization layer 616 on which the multiple protrusions 616a are formed, and can be formed in a cup shape surrounding the lower and side portions of the light-emitting element 120. Furthermore, the reflective electrode RE can be formed in a cup shape surrounding the side portion of the repair site RS. The reflective electrode RE can include a cup-shaped portion surrounding the area of ​​the first opening OA1 where the light-emitting element 120 is disposed and a cup-shaped portion surrounding the area of ​​the second opening OA2 where the repair site RS is formed.

[0106] At the repair site RS, a repair electrode RPE is disposed on the second planarization layer 616 and the reflective electrode RE. A portion of the reflective electrode RE overlapping the repair site RS is patterned, and the repair electrode RPE is disposed on this patterned portion. The repair electrode RPE can be disposed within the patterned portion of the reflective electrode RE and can cover the edge of the reflective electrode RE. The repair electrode RPE can be electrically connected to the reflective electrode RE. Therefore, the additional light-emitting element 130 transferred onto the repair electrode RPE can receive signals from the driving transistor DT through the repair electrode RPE and the reflective electrode RE.

[0107] The repair electrode RPE can be made of a conductive material with low reflectivity. For example, the repair electrode RPE can be made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), but is not limited to this.

[0108] On the other hand, when the reflective electrode RE is not patterned, in a normal sub-pixel SP without the additional light-emitting element 130, the reflective electrode RE is exposed from the second opening OA2, and external light is reflected by the reflective electrode RE to reduce visibility. Therefore, in the area overlapping with the second opening OA2, the reflective electrode RE is patterned, and only a repair electrode RPE with a reflectivity lower than that of the reflective electrode RE is provided to minimize the reflection of external light.

[0109] Next, a first insulating layer 117a is disposed on the reflective electrode RE. The first insulating layer 117a can be disposed in a region other than the repair site RS. The repair electrode RPE can be exposed from the first insulating layer 117a.

[0110] A portion of the second insulating layer 117b overlapping the first opening OA1 and the second opening OA2 is partially patterned such that the second electrode 125 of the light-emitting element 120 and the second additional electrode 135 of the additional light-emitting element 130 can be exposed from the second insulating layer 117b. Therefore, the second insulating layer 117b is patterned such that the light-emitting element 120 and the additional light-emitting element 130 are exposed from the second insulating layer 117b to electrically connect the common electrode CE, the light-emitting element 120, and the additional light-emitting element 130.

[0111] Reference Figure 7 The additional light-emitting element 130 can be transferred to the defective sub-pixel SP to repair the defective sub-pixel SP. Specifically, after forming the second insulating layer 117b in a temporarily cured state, the additional light-emitting element 130, on which the solder pattern SD is formed, can be transferred to the second insulating layer 117b. In this case, by increasing the temperature of the second insulating layer 117b to increase its fluidity, the additional light-emitting element 130 can be lowered toward the repair electrode RPE below the second insulating layer 117b. Finally, the repair electrode RPE and the additional light-emitting element 130 can be electrically connected by a soldering process of the solder pattern SD.

[0112] On the other hand, at the repair site RS, a repair electrode RPE made of a material with low reflectivity is provided below the additional light-emitting element 130 instead of a reflective electrode RE. In this case, the solder pattern SD made of an opaque conductive material functions like the reflective electrode RE to reflect the light from the additional light-emitting element 130 to the upper part of the substrate 110. Therefore, in the sub-pixel SP where the additional light-emitting element 130 is not provided, only the repair electrode RPE is provided to reduce the reflection of external light, and in the sub-pixel SP where the additional light-emitting element 130 is provided, the solder pattern SD is provided to reflect the light from the additional light-emitting element 130 toward the upper side of the additional light-emitting element 130.

[0113] Therefore, in a display device 600 according to another exemplary embodiment of the present disclosure, a plurality of protrusions 616a are provided on the top surface of the second planarization layer 616 to form a cup-shaped reflective electrode RE, thereby improving light extraction efficiency. The reflective electrode RE can be provided along the surface of the second planarization layer 616 and can be configured to be cup-shaped around the regions of the first opening OA1 and the second opening OA2. Therefore, light guided in the lateral direction from the light emitted from the light-emitting element 120 and the additional light-emitting element 130 can be reflected by the reflective electrode RE toward the outside of the display device 600. Therefore, the light extraction efficiency and brightness of the display device 600 can be improved by the reflective electrode RE.

[0114] In a display device 600 according to another exemplary embodiment of the present disclosure, the reflective electrode RE overlapping the repair portion RS is patterned, and only a repair electrode RPE with a reflectivity lower than that of the reflective electrode RE is formed to minimize the reflection of external light. At the repair portion RS overlapping the second opening OA2 of the black matrix BM, a repair electrode RPE made of a material with low reflectivity can be provided instead of the reflective electrode RE. Furthermore, in a portion of the sub-pixel SP where the additional light-emitting element 130 is provided, the solder pattern SD acts as a reflector, similar to the reflective electrode RE, to improve the light extraction efficiency of the additional light-emitting element 130.

[0115] Figure 8 and Figure 9 This is a cross-sectional view of a sub-pixel of a display device according to yet another exemplary embodiment of the present disclosure. Specifically, Figure 8 This is a cross-sectional view of a subpixel SP that has not undergone a repair process among multiple subpixel SPs. Figure 9 This is a cross-sectional view of a subpixel SP that has undergone a repair process among multiple subpixel SPs. (Compared to...) Figures 1 to 5B Compared to the display device 100, Figure 8 and Figure 9 The display device 800 also includes a third insulating layer 819, a pixel electrode PE, and a repair electrode RPE, and only the positions of the light-emitting element 120 and the second insulating layer 817b are different, but the other configurations are basically the same, so redundant descriptions will be omitted.

[0116] Reference Figure 8 The light-emitting element 120 is disposed on the first insulating layer 117a. The light-emitting element 120 may be disposed on the top surface of the first insulating layer 117a. In this case, the first insulating layer 117a may be used as an adhesive layer to temporarily fix the light-emitting element 120 when connecting the light-emitting element 120 and the pixel electrode PE.

[0117] A pixel electrode PE is disposed on the first insulating layer 117a. The pixel electrode PE is an electrode that electrically connects the light-emitting element 120 and the reflective electrode RE. The pixel electrode PE can contact the side of the light-emitting element 120. The pixel electrode PE can contact the side of the first electrode 124 and the first semiconductor layer 121 at the lower part of the light-emitting element 120. Furthermore, the pixel electrode PE can be electrically connected to the reflective electrode RE through the contact hole of the first insulating layer 117a. Therefore, the first electrode 124 of the light-emitting element 120 and the reflective electrode RE can be electrically connected to each other through the pixel electrode PE.

[0118] A repair electrode RPE is disposed at the repair site RS. A portion of the reflective electrode RE overlapping the repair site RS is patterned, and the repair electrode RPE may be formed in the patterned portion. The repair electrode RPE may cover at least a portion of the reflective electrode RE.

[0119] The repair electrode RPE is made of a conductive material with a reflectivity lower than that of the reflective electrode RE, so as to minimize the reflection of external light. For example, the repair electrode RPE can be formed from multiple layers of low-reflectivity electrodes RE. For example, the repair electrode RPE can include at least one of transparent conductive materials and low-reflectivity conductive materials. For example, the repair electrode RPE can have a multilayer structure of indium tin oxide (ITO), molybdenum titanium alloy (MoTi), and copper (Cu).

[0120] In this case, the repair electrode RPE can be exposed from the first insulating layer 117a. During the repair process of the sub-pixel SP, the first insulating layer 117a covering the repair electrode RPE can be removed, so that the additional light-emitting element 130 can be disposed on the top surface of the repair electrode RPE.

[0121] A third insulating layer 819 is disposed on the first insulating layer 117a. The third insulating layer 819 may be configured to cover the light-emitting element 120, the pixel electrode PE, and the repair electrode RPE. At least the second electrode 125 in the configuration of the light-emitting element 120 may be exposed from the third insulating layer 819. The third insulating layer 819 is an insulating layer used to fix and protect the light-emitting element 120 and the additional light-emitting element 130. For example, the third insulating layer 819 may be formed of an acrylic organic material, but is not limited thereto.

[0122] A common electrode CE is disposed on the third insulating layer 819. The common electrode CE can be connected to the second electrode 125 of the light-emitting element 120 exposed from the third insulating layer 819. Furthermore, the common electrode CE can be connected to the power line PL through contact holes in the third insulating layer 819, the first insulating layer 117a, and the planarization layer 116. Therefore, the light-emitting element 120 can be electrically connected to the power line PL through the common electrode CE.

[0123] Reference Figure 9 The second insulating layer 817b may be provided only at the repaired portion RS of the sub-pixel SP that has already undergone the repair process. That is, the second insulating layer 817b may not be provided in a portion of the sub-pixels SP in which the additional light-emitting element 130 is not provided, and the second insulating layer 817b may be provided in other portions of the sub-pixels SP in which the additional light-emitting element 130 is provided.

[0124] The second insulating layer 817b can be disposed in the space between the first insulating layers 117a at the repair site RS. The second insulating layer 817b can cover the repair electrode RPE exposed from the first insulating layer 117a. The second insulating layer 817b can be configured to surround the solder pattern SD and the additional light-emitting element 130.

[0125] Before forming the third insulating layer 819 on the entire surface of the substrate 110, a repair process can be performed first. During the repair process, a second insulating layer 817b can be formed on the repair area RS exposed from the first insulating layer 117a. An additional light-emitting element 130 having a solder pattern SD can be transferred onto the second insulating layer 817b in a temporarily cured state. By increasing the temperature, the fluidity of the second insulating layer 817b can be increased, and the solder pattern SD and the additional light-emitting element 130 can be moved onto the repair electrode RPE. Next, by further increasing the temperature to melt the solder pattern SD, the additional light-emitting element 130 can be attached to the repair electrode RPE.

[0126] After the repair is completed, a third insulating layer 819 can be formed on the entire surface of the substrate 110 to cover the light-emitting element 120 and the additional light-emitting element 130. In this case, since the additional light-emitting element 130 is disposed at a lower height than the light-emitting element 120, a portion of the third insulating layer 819 covering the upper part of the additional light-emitting element 130 can be patterned to expose the second additional electrode 135 of the additional light-emitting element 130 from the third insulating layer 819. Therefore, the common electrode CE formed on the third insulating layer 819 can also be connected to the additional light-emitting element 130.

[0127] Therefore, in a display device 800 according to another exemplary embodiment of the present disclosure, a repair electrode RPE with low reflectivity is formed at the repair portion RS to reduce the reflection of external light. The repair electrode RPE, made of a low reflectivity material, is disposed at the repair portion RS, which overlaps with the second opening OA2 of the black matrix BM, so as to minimize the reflection of external light in the sub-pixel SP where no additional light-emitting element 130 is disposed.

[0128] Exemplary embodiments of this disclosure can also be described as follows: An exemplary embodiment of the present disclosure includes: a substrate defining a plurality of sub-pixels, each including a repair portion; a reflective electrode disposed in each of the plurality of sub-pixels; a repair electrode disposed at a repair portion and electrically connected to the reflective electrode; a light-emitting element disposed on the reflective electrode; a first insulating layer disposed on the reflective electrode and the repair electrode and in contact with at least a portion of the light-emitting element; and a second insulating layer disposed on the repair electrode in at least a portion of the plurality of sub-pixels, wherein the first insulating layer has an opening at the repair portion to expose the repair electrode, and the second insulating layer is in contact with the repair electrode.

[0129] According to another aspect of this disclosure, the repair electrode can be integrally formed with the reflective electrode.

[0130] According to another aspect of this disclosure, the repair electrode may be a transparent electrode.

[0131] According to another aspect of this disclosure, the repair electrode can be made of a material with a reflectivity lower than that of the reflective electrode.

[0132] According to another aspect of this disclosure, it may also include an additional light-emitting element disposed on a repair electrode of a portion of the sub-pixels among a plurality of sub-pixels and a first solder pattern disposed between the additional light-emitting element and the repair electrode.

[0133] According to another aspect of this disclosure, a second solder pattern is also included, which may be disposed between the light-emitting element and the reflective electrode, and the first insulating layer may be configured to cover a portion of the reflective electrode, the second solder pattern, and the light-emitting element.

[0134] According to another aspect of this disclosure, the second insulating layer may be configured to cover the first insulating layer, the light-emitting element, and the additional light-emitting element.

[0135] According to another aspect of this disclosure, the display device may further include a pixel electrode disposed on the top surface of the first insulating layer and configured to contact the side surface of a light-emitting element, wherein the light-emitting element may be disposed on the top surface of the first insulating layer.

[0136] According to another aspect of this disclosure, the second insulating layer may be disposed at the repair site of a portion of the sub-pixels, including an additional light-emitting element, among a plurality of sub-pixels.

[0137] According to another aspect of this disclosure, the display device may further include a third insulating layer disposed on the first insulating layer and the second insulating layer, and in a portion of the sub-pixels including an additional light-emitting element, the third insulating layer may be configured to cover the second insulating layer, and in the remaining sub-pixels excluding the additional light-emitting element, the third insulating layer may be configured to cover the repair electrode.

[0138] According to another aspect of this disclosure, it may also include a black matrix disposed on the first insulating layer, the second insulating layer and the light-emitting element, and having a first opening overlapping the light-emitting element and a second opening overlapping the repaired area.

[0139] According to another aspect of the invention, a planarization layer may be provided between the substrate and the reflective electrode and includes a plurality of protrusions, wherein the plurality of protrusions may overlap with the edges of the first opening and the second opening.

[0140] According to another aspect of this disclosure, the reflective electrode can be configured to cover multiple protrusions.

[0141] According to another aspect of this disclosure, the second insulating layer may be made of an organic material whose fluidity increases at temperatures above 100 degrees Celsius.

[0142] According to another aspect of this disclosure, at the repair site, the repair electrode can be disposed on the planarization layer and the reflective electrode.

[0143] According to another aspect of this disclosure, the portion of the reflective electrode that overlaps with the repair site can be patterned, and the repair electrode is disposed in the patterned portion of the reflective electrode.

[0144] According to another aspect of this disclosure, the portion of the second insulating layer that overlaps with the first and second openings can be partially patterned such that a portion of the light-emitting element and a portion of the additional light-emitting element are exposed from the second insulating layer.

[0145] According to another aspect of this disclosure, the additional light-emitting element can be disposed at a lower height than the light-emitting element.

[0146] According to another aspect of this disclosure, a portion of the third insulating layer may be patterned to expose a portion of the additional light-emitting element from the third insulating layer.

[0147] A display device according to another exemplary embodiment of the present disclosure may include: a substrate defining a plurality of sub-pixels, wherein at least a portion of the plurality of sub-pixels includes a light-emitting element and an additional light-emitting element, wherein each of the at least a portion of the sub-pixels includes: a reflective electrode disposed on the substrate; a repair electrode electrically connected to the reflective electrode; the light-emitting element disposed on the reflective electrode; the additional light-emitting element disposed on the repair electrode; a first insulating layer disposed on the reflective electrode; and a second insulating layer disposed on the first insulating layer, wherein the second insulating layer is in contact with the repair electrode.

[0148] Although exemplary embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the present disclosure is not limited thereto and may be embodied in various different forms without departing from the technical concept of the present disclosure. Therefore, the exemplary embodiments of the present disclosure are provided for illustrative purposes only and are not intended to limit the technical concept of the present disclosure. The scope of the technical concept of the present disclosure is not limited thereto. Therefore, it should be understood that the above embodiments are illustrative in all embodiments and do not limit the present disclosure. All technical concepts within the equivalent scope of the present disclosure should be interpreted as falling within the scope of the present disclosure.

Claims

1. A display device, comprising: A substrate, wherein multiple sub-pixels, each including a repair portion, are defined therein; A reflective electrode is disposed in each of the plurality of sub-pixels; A repair electrode is disposed at the repair site and electrically connected to the reflective electrode; A light-emitting element is disposed on the reflective electrode; A first insulating layer is disposed on the reflective electrode and the repair electrode and is in contact with at least a portion of the light-emitting element; as well as A second insulating layer is disposed on the repair electrode in at least a portion of the sub-pixels among the plurality of sub-pixels. The first insulating layer has an opening at the repair site to expose the repair electrode, and the second insulating layer is in contact with the repair electrode.

2. The display device according to claim 1, wherein, The repair electrode and the reflective electrode are integrally formed.

3. The display device according to claim 1, wherein, The repair electrode is a transparent electrode.

4. The display device according to claim 1, wherein, The repair electrode is formed of a material with a reflectivity lower than that of the reflective electrode.

5. The display device according to claim 1, further comprising: An additional light-emitting element is disposed on the repair electrode of a portion of the sub-pixels among the plurality of sub-pixels; as well as A first solder pattern is disposed between the additional light-emitting element and the repair electrode.

6. The display device according to claim 5, further comprising a second solder pattern disposed between the light-emitting element and the reflective electrode, and the first insulating layer being configured to cover a portion of the reflective electrode, the second solder pattern, and the light-emitting element.

7. The display device according to claim 6, wherein, The second insulating layer is configured to cover the first insulating layer, the light-emitting element, and the additional light-emitting element.

8. The display device according to claim 5, further comprising: The pixel electrode is disposed on the top surface of the first insulating layer and in contact with the side surface of the light-emitting element. The light-emitting element is disposed on the top surface of the first insulating layer.

9. The display device according to claim 8, wherein, The second insulating layer is disposed at the repair site of a portion of the sub-pixels, including the additional light-emitting element, among the plurality of sub-pixels.

10. The display device according to claim 9, further comprising: A third insulating layer is disposed on top of the first and second insulating layers. In a subset of the sub-pixels including the additional light-emitting element, the third insulating layer is configured to cover the second insulating layer, and In the remaining sub-pixels of the plurality of sub-pixels, excluding the additional light-emitting element, the third insulating layer is configured to cover the repair electrode.

11. The display device according to claim 1, further comprising: A black matrix is ​​disposed on the first insulating layer, the second insulating layer and the light-emitting element, and has a first opening that overlaps with the light-emitting element and a second opening that overlaps with the repaired area.

12. The display device according to claim 11, further comprising: A planarization layer is disposed between the substrate and the reflective electrode and includes multiple protrusions. The plurality of protrusions overlap with the edges of the first opening and the second opening.

13. The display device according to claim 12, wherein, The reflective electrode is configured to cover the plurality of protrusions.

14. The display device according to claim 1, wherein, The second insulating layer is formed of an organic material whose fluidity increases at temperatures above 100 degrees Celsius.

15. The display device according to claim 12, wherein, At the repair site, the repair electrode is disposed on the planarization layer and the reflective electrode.

16. The display device according to claim 15, wherein, The portion of the reflective electrode that overlaps with the repair site is patterned, and the repair electrode is disposed within the patterned portion of the reflective electrode.

17. The display device according to claim 11, wherein, The portion of the second insulating layer that overlaps with the first and second openings is partially patterned, such that a portion of the light-emitting element and a portion of the additional light-emitting element are exposed from the second insulating layer.

18. The display device according to claim 10, wherein, The additional light-emitting element is positioned at a lower height than the light-emitting element.

19. The display device according to claim 18, wherein, A portion of the third insulating layer is patterned to expose a portion of the additional light-emitting element from the third insulating layer.

20. A display device, comprising: A substrate, wherein a plurality of sub-pixels are defined. Wherein, at least a portion of the plurality of sub-pixels include a light-emitting element and an additional light-emitting element, Each of the at least a subset of sub-pixels includes: A reflective electrode is disposed on the substrate; Repair electrode, electrically connected to the reflective electrode; The light-emitting element is disposed on the reflective electrode; The additional light-emitting element is disposed on the repair electrode; A first insulating layer is disposed on the reflective electrode; and A second insulating layer is disposed on the first insulating layer, and The second insulating layer is in contact with the repair electrode.

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