Display device
Patent Information
- Application Number
- CN202610571016.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2025-04-28
- Filing Date
- 2026-04-28
- Publication Date
- 2026-10-30
AI Technical Summary
[0008]然而,由于使用有机材料的OLED显示装置易于出现缺陷像素,例如由于湿气和氧气渗透而导致的有机发光层和电极之间的氧化,因此需要各种技术配置来最小化这种渗透
Smart Images

Figure CN123021865A_ABST
Abstract
Description
[0001] Cross-references to related applications
[0002] This application claims priority to Korean Patent Application No. 10-2025-0055110, filed on April 28, 2025, the entire contents of which are incorporated herein by reference for all purposes. Technical Field
[0003] This specification relates to a display device. Background Technology
[0004] Currently, widely used liquid crystal displays (LCDs), organic light-emitting diode (OLED) displays, and quantum dot displays (QDs) are gradually expanding their application scope.
[0005] The display device realizes an image by arranging multiple light-emitting elements on the substrate of the display device and by arranging on the same substrate a drive signal or drive current to control each light-emitting element to emit light individually. Thus, the multiple light-emitting elements arranged on the substrate are driven according to the arrangement of the information to be displayed, so that the information is displayed on the substrate.
[0006] LCDs are not self-emissive, therefore a backlight unit is required to emit light from the rear surface of the LCD. Backlight units increase the thickness of the LCD, limit the realization of various display shapes (such as flexible, circular, etc.), and reduce brightness and response time.
[0007] Meanwhile, display devices with self-emissive elements can be thinner than those with built-in light sources, enabling flexible and foldable display devices. Display devices with self-emissive elements can include OLED display devices that incorporate organic materials as the light-emitting layer, light-emitting diode (LED) display devices that use LEDs as the light-emitting element, and so on. Furthermore, self-emissive displays (such as OLED or LED display devices) do not require a separate light source, thus allowing for thinner displays and a wider range of display formats.
[0008] However, since OLED display devices using organic materials are prone to defective pixels, such as oxidation between the organic light-emitting layer and electrodes due to moisture and oxygen penetration, various technical configurations are needed to minimize this penetration.
[0009] Recently, research and development have been underway on display devices that use inorganic LEDs as light-emitting elements, and these light-emitting display devices have attracted attention as next-generation displays due to their high image quality and high reliability. Summary of the Invention
[0010] Various embodiments of this specification relate to providing a display device capable of repairing pixels by repairing a color conversion layer.
[0011] Various embodiments of this specification also relate to providing a display device capable of improving the image quality of a display panel by repairing pixels.
[0012] Various embodiments of this specification also relate to providing a display device capable of achieving low power consumption by repairing subpixels.
[0013] Various embodiments of this specification also relate to providing a display device that can optimize the structure of each subpixel based on the required current in a display device where subpixel repair can be applied.
[0014] The purpose of this specification is not limited to the above-described purposes, and other technical purposes can be inferred from the following embodiments.
[0015] According to one embodiment, a display device is provided, the display device comprising: a substrate, wherein a first sub-pixel and a fourth sub-pixel are defined on the substrate; an 1a transistor and a 1d transistor are located on the substrate; a first light-emitting element is connected to the 1a transistor and disposed on the first sub-pixel; and a fourth light-emitting element is connected to the 1d transistor and disposed on the fourth sub-pixel, wherein each of the first light-emitting element and the fourth light-emitting element comprises an inorganic light-emitting element, emitting a first light (e.g., red light) or a third light (e.g., blue light) from the first sub-pixel, and emitting a second light (e.g., green light) or a third light (e.g., blue light) from the fourth sub-pixel, each of the 1a transistor and the 1d transistor is a driving transistor, and the width of the 1a semiconductor layer of the 1a transistor is greater than the width of the 1d semiconductor layer of the 1d transistor.
[0016] According to another embodiment, a display device is provided. The display device includes a first pixel and a second pixel. The first pixel includes a first sub-pixel, a second sub-pixel, a third sub-pixel, and a fourth sub-pixel. A black matrix is disposed on at least one of the first sub-pixel to the fourth sub-pixel. The second pixel is disposed adjacent to the first pixel and includes the first sub-pixel, the second sub-pixel, the third sub-pixel, and the fourth sub-pixel. In the first pixel, a first color conversion layer is disposed on the first sub-pixel, a second color conversion layer is disposed on the second sub-pixel, a third color conversion layer is disposed on the third sub-pixel, and a fourth color conversion layer is disposed on the fourth sub-pixel. In the second pixel, a color conversion layer different from the color conversion layer in the first pixel is disposed on at least one of the first sub-pixel, the second sub-pixel, the third sub-pixel, and the fourth sub-pixel.
[0017] According to yet another embodiment, a display device is provided, comprising: a first pixel including a first sub-pixel, a second sub-pixel, a third sub-pixel, and a fourth sub-pixel, wherein a black matrix is disposed on at least one of the first sub-pixel to the fourth sub-pixel, wherein the black matrix is disposed in one of the first sub-pixel to the fourth sub-pixel, and a color conversion layer disposed in the sub-pixel on which the black matrix is disposed is also disposed in another sub-pixel on which no black matrix is disposed.
[0018] Details of other implementation methods are included in the specific implementation methods and accompanying drawings. Attached Figure Description
[0019] Figure 1 This is a system configuration diagram of a display device according to one embodiment.
[0020] Figure 2 This is a view showing sub-pixels according to one implementation.
[0021] Figure 3 This is a diagram illustrating a first type of transformation between sub-pixels within a pixel according to one embodiment.
[0022] Figure 4 This shows the application. Figure 3 The diagram showing the repair of the first type of conversion in the image.
[0023] Figure 5 It is along Figure 4 A cross-sectional view of line A-A' in the diagram.
[0024] Figure 6 It is along Figure 4 A cross-sectional view of line B-B' in the diagram.
[0025] Figure 7 It is along Figure 4 A cross-sectional view of line C-C' in the diagram.
[0026] Figure 8 This shows the application. Figure 3 The diagram showing the repair of the first type of conversion in the image.
[0027] Figure 9 This shows the application. Figure 3 The diagram showing the repair of the first type of conversion in the image.
[0028] Figure 10 This shows the application. Figure 3 The diagram showing the repair of the first type of conversion in the image.
[0029] Figure 11 This is a diagram illustrating a second type of transformation between sub-pixels within a pixel according to one embodiment.
[0030] Figure 12 This shows the application. Figure 11 The diagram showing the repair of the second type of conversion in the image.
[0031] Figure 13 It is along Figure 12 A cross-sectional view of line D-D' in the diagram.
[0032] Figure 14 This is a diagram illustrating a third type of transformation between sub-pixels within a pixel according to one embodiment.
[0033] Figure 15 This shows the application. Figure 14 The view of the third type of conversion repair in the middle.
[0034] Figure 16 It is along Figure 15 A cross-sectional view of line E-E' in the diagram.
[0035] Figure 17 It is a pixel layout diagram according to one implementation method.
[0036] Figure 18 for Figure 17 A cross-sectional view of the first sub-pixel in the image.
[0037] Figure 19 for Figure 17 A cross-sectional view of the fourth sub-pixel in the image. Detailed Implementation
[0038] Various embodiments will be described below with reference to the accompanying drawings.
[0039] The same reference numerals denote the same parts. Furthermore, in the accompanying drawings, the thickness, scale, and dimensions of parts may be enlarged for effective description of the technical content. For ease of description, the scale of the parts shown in the drawings differs from the actual scale, and therefore, the drawings are not limited to the scale shown.
[0040] In this specification, when a particular component (or area, layer, section, etc.) is described as being “on,” “connected,” or “coupled” to another component, it means that the particular component can be directly connected to / coupled to the other component, or that another component can be positioned between them.
[0041] The term "and / or" includes all or one combination that can be defined by the associated configuration.
[0042] Terms such as "first," "second," etc., can be used to describe various components, but components are not limited by the terms. These terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of various embodiments, a first component may be referred to as a second component, and similarly, a second component may be referred to as a first component. Unless the context clearly specifies otherwise, the singular includes the plural.
[0043] Terms such as “below,” “under,” “above,” and “over” are used to describe the relationships between components shown in the accompanying drawings. These terms are relative concepts and are described relative to the directions marked in the drawings. For example, one or more other parts may be positioned between two parts, provided that “immediately adjacent” or “directly” is not used. Spatially relative terms such as “below or below,” “lower,” “above,” and “upper” can be used to readily describe the relationship between one element or component and another element or component in the drawings. Spatially relative terms should be understood to include terms for different orientations of elements in use or operation, in addition to the orientations shown in the drawings. For example, in the case where the elements shown in the drawings are inverted, an element described as being positioned “below” or “under” another element may be positioned “above” another element. Thus, the exemplary term “below” can include both downward and upward directions.
[0044] It should be understood that terms such as “comprising” or “having” are intended to specify the presence of features, quantities, steps, operations, components, parts or combinations thereof described in the specification, and do not preclude the possibility of the existence or addition of one or more other features, quantities, steps, operations, components, parts or combinations thereof.
[0045] Features of the various embodiments described herein may be partially or completely coupled or combined, various technologies may be interconnected and driven, and various embodiments may be implemented independently of each other or together in an associated relationship.
[0046] The display device described herein will be referred to in the following description with reference to the accompanying drawings and embodiments.
[0047] Figure 1 This is a system configuration diagram of a display device according to one embodiment.
[0048] refer to Figure 1 The display device 100 according to various embodiments of this specification may include components for displaying images, such as a display panel 110 and a display driving circuit. The display driving circuit can drive the display panel 110 and includes a data driving circuit 120, a gate driving circuit 130, a display controller 140, etc.
[0049] The display panel 110 may include a substrate 111 and a plurality of sub-pixels SP disposed on the substrate 111. The substrate 111 of the display panel 110 may include a display area DA capable of displaying an image and a non-display area NDA located outside the display area DA.
[0050] Multiple sub-pixels SP used to display images can be set in the display area DA.
[0051] In the display panel 110 according to various embodiments of this specification, the non-display area NDA can be very small. In this specification, the non-display area NDA is also referred to as the "border".
[0052] Various types of signal lines for driving multiple sub-pixels SP can be provided on the substrate 111 of the display panel 110.
[0053] The display device 100 according to various embodiments of this specification may be a liquid crystal display device, a self-emissive display device in which the display panel 110 emits light independently, etc. When the display device 100 according to various embodiments of this specification is a self-emissive display device, each of the plurality of sub-pixels SP may include a light-emitting element. For example, the display device 100 according to various embodiments of this specification may be an organic light-emitting display device, wherein the light-emitting element is implemented as an organic light-emitting diode (OLED). As another example, the display device 100 according to various embodiments of this specification may be an inorganic light-emitting display device, wherein the light-emitting element is implemented as a light-emitting diode based on inorganic materials. As yet another example, the display device 100 according to various embodiments of this specification may be a quantum dot display device, wherein the light-emitting element is implemented as a quantum dot, which is a semiconductor crystal that emits light on its own.
[0054] The structure of each of the plurality of sub-pixels SP can vary depending on the type of display device 100. For example, when the display device 100 is a self-emissive display device in which the sub-pixels SP emit their own light, each sub-pixel SP may include a self-emissive light-emitting element, one or more transistors, and one or more capacitors.
[0055] For example, various types of signal lines may include multiple data lines DL through which data signals (also known as data voltages or image signals) are transmitted, multiple gate lines GL through which gate signals (also known as scan signals) are transmitted, and so on.
[0056] The data driving circuit 120 can drive multiple data lines DL and output data signals to the multiple data lines DL. The data driving circuit 120 can receive digital image data DATA from the display controller 140, convert the received image data DATA into analog data signals, and output the analog data signals VDATA to the multiple data lines DL. The data driving circuit 120 can be connected to one side (top or bottom) of the display panel 110. Alternatively, the data driving circuit 120 can be connected to both sides (e.g., top and bottom) of the display panel 110, or to two or more of the four side surfaces of the display panel 110, depending on the driving method, panel design method, etc. The data driving circuit 120 can be connected to the outer edge of the display area DA of the display panel 110, but alternatively, it can be located inside the display area DA of the display panel 110.
[0057] The gate drive circuit 130 can drive multiple gate lines GL and output gate signals to the multiple gate lines GL. The gate drive circuit 130 can receive a first gate voltage corresponding to the on-level voltage and a second gate voltage corresponding to the off-level voltage, as well as various gate drive control signals GCS, generate gate signals, and provide the generated gate signals to the multiple gate lines GL.
[0058] The display controller 140 can control the data drive circuit 120 and the gate drive circuit 130, and control the driving timing of multiple data lines DL and multiple gate lines GL. The display controller 140 can provide a data drive control signal DCS to the data drive circuit 120 to control the data drive circuit 120, and a gate drive control signal GCS to the gate drive circuit 130 to control the gate drive circuit 130. The display controller 140 can receive input image data from the host system 150 and provide image data DATA to the data drive circuit 120 based on the input image data. The display controller 140 can be implemented as a separate component from the data drive circuit 120, or it can be implemented as an integrated circuit together with the data drive circuit 120. The display controller 140 can be a timing controller used in typical display technologies, a control device capable of further performing control functions other than a timing controller, a control device different from a timing controller, or a circuit within a control device. The display controller 140 can be mounted on a printed circuit board, flexible printed circuit, etc., and is electrically connected to the data drive circuit 120 and the gate drive circuit 130 via the printed circuit board, flexible printed circuit, etc.
[0059] To provide both image display and touch sensing functions, the display device 100 according to various embodiments of this specification may include a touch sensor and a touch sensing circuit for detecting whether a touch is caused by a touch object such as a finger or a pen, or for detecting the touch position by sensing the touch sensor.
[0060] The display device 100 according to various embodiments of this specification may also include electronic devices such as cameras (image sensors), detection sensors, etc. For example, a detection sensor can detect an object or a human body by receiving light such as infrared, ultrasonic, or ultraviolet light.
[0061] Figure 2 This is a view showing sub-pixels according to one implementation.
[0062] Reference Figure 2 Each of the multiple sub-pixels SP may include a light-emitting element LD and a sub-pixel circuit SPC for driving the light-emitting element LD.
[0063] Reference Figure 2 The subpixel circuit (SPC) may include multiple pixel driving transistors and at least one capacitor for driving the light-emitting element (LD).
[0064] In this disclosure, the sub-pixel circuit SPC can drive the light-emitting element LD by supplying a driving current to the light-emitting element LD at a predetermined timing. The light-emitting element LD can be driven by the driving current to emit light.
[0065] Multiple pixel driving transistors may include a driving transistor DT for driving the light-emitting element LD and a scanning transistor ST that is turned on or off according to the scanning signal SC.
[0066] The driving transistor DT can provide drive current to the light-emitting element LD.
[0067] The scanning transistor ST can be configured to control the electrical state of the corresponding node within the sub-pixel circuit SPC or to control the state or operation of the drive transistor DT.
[0068] At least one capacitor may include a storage capacitor Cst for maintaining a predetermined voltage for one frame.
[0069] To drive the sub-pixel SP, a data signal VDATA, which serves as an image signal, and a scan signal SC, which serves as a gate signal, can be applied to the sub-pixel SP. Furthermore, to drive the sub-pixel SP, a common pixel driving voltage, including a driving voltage VDD and a base voltage VSS, can be applied to the sub-pixel SP.
[0070] The light-emitting element (LD) can be an OLED, an LED based on inorganic materials, a quantum dot light-emitting element, etc. For example, when the light-emitting element (LD) is an OLED, the intermediate layer (EL) of the light-emitting element (LD) can include an intermediate layer (EL) containing organic materials.
[0071] A driving transistor DT can provide drive current to a light-emitting element LD. The driving transistor DT can be connected to a drive voltage line VDDL and the light-emitting element LD. The driving transistor DT may include a first node N1 electrically connected to the light-emitting element LD, a second node N2 to which a data signal VDATA can be applied, and a third node N3 to which a drive voltage VDD is applied from the drive voltage line VDDL. In the driving transistor DT, the second node N2 can be a gate node, the first node N1 can be a source node or a drain node, and the third node N3 can be a drain node or a source node. In the following description, for ease of description, an example in which the second node N2 is a gate node, the first node N1 is a source node, and the third node N3 is a drain node will be described.
[0072] Included Figure 2 The scan transistor ST in the illustrated sub-pixel circuit SPC can be a switching transistor used to transmit the data signal VDATA, which is an image signal, to the second node N2, which is the gate node of the driving transistor DT. The scan transistor ST can be turned on and off by a scan signal SC, which is a gate signal applied via a scan line SCL, a type of gate line GL, thereby controlling the electrical connection between the second node N2 of the driving transistor DT and the data line DL. The drain or source electrode of the scan transistor ST can be electrically connected to the data line DL, the source or drain electrode of the scan transistor ST can be electrically connected to the second node N2 of the driving transistor DT, and the gate electrode of the scan transistor ST can be electrically connected to the scan line SCL.
[0073] The storage capacitor Cst can be electrically connected to the first node N1 and the second node N2 of the driving transistor DT. The storage capacitor Cst can include a first capacitor electrode electrically connected to or corresponding to the first node N1 of the driving transistor DT, and a second capacitor electrode electrically connected to or corresponding to the second node N2 of the driving transistor DT. The storage capacitor Cst can be an external capacitor intentionally designed to be outside the driving transistor DT, rather than a parasitic capacitor (e.g., Cgs, Cgd) that can exist as an internal capacitor between the first node N1 and the second node N2 of the driving transistor DT.
[0074] Each of the driving transistor DT and the scanning transistor ST can be an n-type transistor or a p-type transistor.
[0075] The display panel 110 may have a top-emitting structure or a bottom-emitting structure. When the display panel 110 has a top-emitting structure, at least a portion of the sub-pixel circuit SPC may vertically overlap with at least a portion of the light-emitting element LD. Alternatively, when the display panel 110 has a bottom-emitting structure, the sub-pixel circuit SPC may not vertically overlap with the light-emitting element LD.
[0076] like Figure 2 As shown, a subpixel circuit SPC can have a 2T (transistor) 1C (capacitor) structure, including two transistors DT and ST and a capacitor Cst, and in some cases, it can also include one or more transistors or one or more capacitors. For example, a subpixel circuit SPC can have an 8T1C structure, including eight transistors and one capacitor. As another example, a subpixel circuit SPC can have a 6T2C structure, including six transistors and two capacitors. As yet another example, a subpixel circuit SPC can have a 7T1C structure, including seven transistors and one capacitor.
[0077] Depending on the structure of the sub-pixel circuit SPC, the type and number of gate signal lines supplied to the sub-pixel SP can vary. Furthermore, depending on the structure of the sub-pixel circuit SPC, the type and number of common pixel drive voltages supplied to the sub-pixel SP can also vary.
[0078] Figure 3 This diagram illustrates a first type of transformation between subpixels within a pixel according to one embodiment. In this specification, a transformation can mean that, in the subpixel to be transformed, the original color to be emitted is converted to a color to be emitted from an adjacent subpixel, and then the converted color is emitted. As will be described below, the first type of transformation can be a transformation between a first subpixel and a third subpixel, the second type of transformation can be a transformation between a first subpixel and a second subpixel, and the third type of transformation can be a transformation between a fourth subpixel and a third subpixel.
[0079] Figure 3 It shows Figure 4 The sub-pixel of the second pixel PXL2 in the image. Figure 3 The left image shows the second pixel PXL2 before the first type conversion is applied, and Figure 3 The right image shows the second pixel PXL2 after the first type of transformation has been applied.
[0080] Figure 4Each pixel in the image may include a first sub-pixel SP1, a second sub-pixel SP2, a third sub-pixel SP3, and a fourth sub-pixel SP4. The first sub-pixel SP1 may be positioned on one side of the second direction DR2 and one side of the first direction DR1; the second sub-pixel SP2 may be positioned on one side of the second direction DR2 and the other side of the first direction DR1; the third sub-pixel SP3 may be positioned on the other side of the second direction DR2 and the other side of the first direction DR1; and the fourth sub-pixel SP4 may be positioned on the other side of the second direction DR2 and one side of the first direction DR1. For example, the first sub-pixel SP1 may be located in the upper right, the second sub-pixel SP2 in the upper left, the third sub-pixel SP3 in the lower left, and the fourth sub-pixel SP4 in the lower right.
[0081] Four sub-pixels SP1 to SP4 can form a pixel PXL. By adjusting the grayscale of each of the four sub-pixels SP1 to SP4, the grayscale and color of a pixel PXL can be controlled.
[0082] The four sub-pixels SP1 to SP4 can be combinations of RGGB, BRRG, RBBG, RGBW, RGBY, WYYW, RYYW, etc. R represents red, G represents green, B represents blue, W represents white, and Y represents yellow. These combinations can also include M (magenta) and C (cyan). For ease of description, the following description assumes that the four sub-pixels SP1 to SP4 are RGGB.
[0083] like Figure 3 As shown in the left image, the first sub-pixel SP1 emits red light, the second sub-pixel SP2 emits green light, the third sub-pixel SP3 emits blue light, and the fourth sub-pixel SP4 emits green light.
[0084] If the first type conversion is applied Figure 3 As shown in the right figure, the color of the light emitted from each of the first sub-pixel SP1 and the third sub-pixel SP3 can be changed. That is, blue light can be emitted from the first sub-pixel SP1, and red light can be emitted from the third sub-pixel SP3.
[0085] Figure 4 It shows that it has been applied. Figure 3 The diagram showing the repair of the first type of conversion in the image.
[0086] Reference Figure 4 Multiple pixels PXL can be set in matrix form.
[0087] The first pixel PXL1 to the third pixel PXL3 can be set in the first row R1. The first pixel PXL1 to the third pixel PXL3 can be set in the first column C1, the second column C2, and the third column C3 respectively.
[0088] The fourth pixel PXL4 to the sixth pixel PXL6 can be set in the second row R2. The fourth pixel PXL4 to the sixth pixel PXL6 can be set in the first column C1, the second column C2, and the third column C3 respectively.
[0089] The seventh pixel PXL7 to the ninth pixel PXL9 can be set in the third row R3. The seventh pixel PXL7 to the ninth pixel PXL9 can be set in the first column C1, the second column C2, and the third column C3 respectively.
[0090] Each of the multiple pixels PXL1 to PXL9 may include four sub-pixels SP1 to SP4 (see...) Figure 3 ). Figure 4 This shows four sub-pixels SP1 to SP4 included in each of the multiple pixels PXL1 to PXL9 (see...). Figure 3 The grayscale of ). For example, in Figure 4 In each sub-pixel, 50 gray levels can be represented in the first sub-pixel SP1, 25 gray levels can be represented in the second sub-pixel SP2, 50 gray levels can be represented in the third sub-pixel SP3, and 25 gray levels can be represented in the fourth sub-pixel SP4 (excluding PXL2, PXL5, and PXL6).
[0091] exist Figure 4 In this implementation, the first sub-pixel SP1 and the second sub-pixel SP2 of the fifth pixel PXL5 may be defective. In this case, the black matrix can be set in the first sub-pixel SP1 and the second sub-pixel SP2 of the fifth pixel PXL5.
[0092] A first-type conversion can be performed in the second pixel PXL2 and the sixth pixel PXL6, which are adjacent to the first sub-pixel SP1 of the fifth pixel PXL5, to repair the first sub-pixel SP1 in the fifth pixel PXL5. For example, in pixels PXL2 and PXL6, the first sub-pixel SP1 and the third sub-pixel SP3 can be converted. That is, in pixels PXL2 and PXL6, blue light can be emitted from the first sub-pixel SP1, red light can be emitted from the third sub-pixel SP3, and the grayscale of the red light in each of the converted pixels PXL2 and PXL6 can be increased (e.g., from 50 to 53). To this end, in pixels PXL2 and PXL6, a third color conversion layer that emits blue light can be set in the first sub-pixel SP1, and a first color conversion layer that emits red light can be set in the third sub-pixel SP3.
[0093] Additionally, to fix the second sub-pixel SP2 of the fifth pixel PXL5, the grayscale of the fourth sub-pixel SP4 of the fifth pixel PXL5 can be increased (e.g., from 25 to 50).
[0094] Figure 5 It is along Figure 4 A cross-sectional view of line A-A' in the diagram.
[0095] Reference Figure 5 The display panel may include a first sub-pixel SP1, a second sub-pixel SP2, a third sub-pixel SP3, and a fourth sub-pixel SP4. The display panel may include a substrate 111, a lower LWL layer, an upper UPL layer, light-emitting elements LD1 to LD4, a first upper insulating layer UIL1, color conversion layers CCL1 to CCL4, a black matrix BM, and a second upper insulating layer UIL2. Red light may be emitted from the first sub-pixel SP1, green light from the second sub-pixel SP2, blue light from the third sub-pixel SP3, and green light from the fourth sub-pixel SP4.
[0096] The substrate 111 may include flexible plastic or rigid material including glass (or quartz), but the various embodiments described herein are not limited thereto.
[0097] The light-emitting elements LD1, LD2, LD3 and LD4 can be configured to correspond to the sub-pixels SP1, SP2, SP3 and SP4 on the substrate 111, respectively. Each of the light-emitting elements LD1, LD2, LD3 and LD4 can include an inorganic light-emitting element and emit white light or blue light.
[0098] The lower layer LWL can be disposed below each light-emitting element LD1, LD2, LD3, and LD4. The lower layer LWL may include at least one transistor, a capacitor, and at least one insulating layer.
[0099] The upper UPL can be disposed around the light-emitting elements LD1, LD2, LD3 and LD4. The upper UPL may include electrodes (or lines) connecting at least one transistor of the lower LWL to each of the light-emitting elements LD1, LD2, LD3 and LD4, and at least one insulating layer.
[0100] The light-emitting elements LD1, LD2, LD3 and LD4 can be respectively set on the lower layer LWL of sub-pixels SP1, SP2, SP3 and SP4.
[0101] The first upper insulating layer UIL1 can be disposed on the upper UPL and the light-emitting elements LD1 to LD4. The first upper insulating layer UIL1 can include inorganic insulating material or organic insulating material. The first upper insulating layer UIL1 can allow the upper color conversion layers CCL1 to CCL4 to be disposed flat.
[0102] Color conversion layers CCL1 to CCL4 can be set on the first upper insulating layer UIL1.
[0103] A first color conversion layer CCL1 can be disposed in a first sub-pixel SP1, a second color conversion layer CCL2 can be disposed in a second sub-pixel SP2, a third color conversion layer CCL3 can be disposed in a third sub-pixel SP3, and a fourth color conversion layer CCL4 can be disposed in a fourth sub-pixel SP4. The first color conversion layer CCL1 may include a material that emits red light, and includes a first color conversion material layer CCL1a and a first color filter CCL1b on the first color conversion material layer CCL1a. The first color conversion material layer CCL1a may include an organic phosphor, an inorganic phosphor, a quantum dot, or a color filter. The first color filter CCL1b can emit red light and block green and blue light.
[0104] The second color conversion layer CCL2 may include a material that emits green light, and includes a second color conversion material layer CCL2a and a second color filter CCL2b on the second color conversion material layer CCL2a. The second color conversion material layer CCL2a may include an organic phosphor, an inorganic phosphor, a quantum dot, or a color filter. The second color filter CCL2b may emit green light and block blue and red light.
[0105] The third color conversion layer CCL3 may include a material that emits blue light, and includes a third color conversion material layer CCL3a and a third color filter CCL3b on the third color conversion material layer CCL3a. The third color conversion material layer CCL3a may include an organic phosphor, an inorganic phosphor, a quantum dot, or a color filter. The third color filter CCL3b may emit blue light and block red and green light.
[0106] The fourth color conversion layer CCL4 may include a material that emits green light, and includes a fourth color conversion material layer CCL4a and a fourth color filter CCL4b on the fourth color conversion material layer CCL4a. The fourth color conversion material layer CCL4a may include an organic phosphor, an inorganic phosphor, quantum dots, or a color filter. The fourth color filter CCL4b may emit green light and block blue and red light.
[0107] The black matrix BM can be disposed between adjacent color conversion layers CCL1, CCL2, CCL3, and CCL4. The black matrix BM can also be disposed on the first upper insulating layer UIL1, outside of color conversion layers CCL1 to CCL4. (See reference...) Figure 5 The black matrix BM can be set to fill the gap between color conversion layers CCL1 to CCL4. Based on Figure 5 The cross-sectional view shown shows that since the color conversion layers CCL1 to CCL4 are formed before the black matrix BM, the color conversion layers CCL1 to CCL4 can have a positive cone shape, and the black matrix BM can have a negative cone shape, but the various embodiments of this specification are not limited to this.
[0108] The second upper insulating layer UIL2 can be disposed on the color conversion layers CCL1 to CCL4 and the black matrix BM. The second upper insulating layer UIL2 can externally protect the color conversion layers CCL1 to CCL4. The second upper insulating layer UIL2 can include inorganic insulating materials or organic insulating materials.
[0109] Figure 6 It is along Figure 4 A cross-sectional view of line B-B' in the diagram.
[0110] refer to Figure 6 It can emit blue light from the first sub-pixel SP1, green light from the second sub-pixel SP2, red light from the third sub-pixel SP3, and green light from the fourth sub-pixel SP4.
[0111] A first color conversion layer CCL1 can be disposed in the third sub-pixel SP3, a second color conversion layer CCL2 can be disposed in the second sub-pixel SP2, a third color conversion layer CCL3 can be disposed in the first sub-pixel SP1, and a fourth color conversion layer CCL4 can be disposed in the fourth sub-pixel SP4. The first color conversion layer CCL1 may include a material that emits red light, and the third color conversion layer CCL3 may include a material that emits blue light.
[0112] Figure 7 It is along Figure 4 A cross-sectional view of line C-C' in the diagram.
[0113] Reference Figure 7 Light can be avoided from emitting from defective sub-pixels (i.e., first sub-pixel SP1 and second sub-pixel SP2). For this purpose, the black matrix BM can be configured to overlap with the color conversion layers CCL1 and CCL2 and the light-emitting elements LD1 and LD2.
[0114] Figure 8 It shows that it has been applied. Figure 3 The diagram showing the repair of the first type of conversion in the image.
[0115] exist Figure 8 In this implementation, the first sub-pixel SP1 and the fourth sub-pixel SP4 of the fifth pixel PXL5 may be defective. In this case, the black matrix can be set in the first sub-pixel SP1 and the fourth sub-pixel SP4 of the fifth pixel PXL5.
[0116] A first-type conversion can be performed in the second pixel PXL2 and the sixth pixel PXL6, which are adjacent to the first sub-pixel SP1 of the fifth pixel PXL5, to repair the first sub-pixel SP1 of the fifth pixel PXL5. For example, in pixels PXL2 and PXL6, the first sub-pixel SP1 and the third sub-pixel SP3 can be converted. This has already been referenced above. Figure 4It has been described, so its detailed description will be omitted.
[0117] Additionally, to fix the fourth sub-pixel SP4 of the fifth pixel PXL5, the grayscale of the second sub-pixel SP2 of the fifth pixel PXL5 can be increased (e.g., from 25 to 50).
[0118] Figure 9 It shows that it has been applied. Figure 3 The diagram showing the repair of the first type of conversion in the image.
[0119] exist Figure 9 In this implementation, the third sub-pixel SP3 and the fourth sub-pixel SP4 of the fifth pixel PXL5 may be defective. In this case, the black matrix can be set in the third sub-pixel SP3 and the fourth sub-pixel SP4 of the fifth pixel PXL5.
[0120] A first-type conversion can be performed in the fourth pixel PXL4 and the eighth pixel PXL8, which are adjacent to the third sub-pixel SP3 of the fifth pixel PXL5, to repair the third sub-pixel SP3 of the fifth pixel PXL5. For example, in pixels PXL4 and PXL8, the first sub-pixel SP1 and the third sub-pixel SP3 can be converted. That is, in pixels PXL4 and PXL8, blue light can be emitted from the first sub-pixel SP1, red light can be emitted from the third sub-pixel SP3, and the grayscale of the blue light in each of the converted pixels PXL4 and PXL8 can be increased (e.g., from 50 to 53). To this end, in pixels PXL4 and PXL8, a third color conversion layer that emits blue light can be set in the first sub-pixel SP1, and a first color conversion layer that emits red light can be set in the third sub-pixel SP3.
[0121] Additionally, to fix the fourth sub-pixel SP4 of the fifth pixel PXL5, the grayscale of the second sub-pixel SP2 of the fifth pixel PXL5 can be increased (e.g., from 25 to 50).
[0122] Figure 10 This shows the application. Figure 3 The diagram showing the repair of the first type of conversion in the image.
[0123] exist Figure 10 In this implementation, the second sub-pixel SP2 and the third sub-pixel SP3 of the fifth pixel PXL5 may be defective. In this case, the black matrix can be set in the second sub-pixel SP2 and the third sub-pixel SP3 of the fifth pixel PXL5.
[0124] A first-type conversion can be performed in the fourth pixel PXL4 and the eighth pixel PXL8, which are adjacent to the third sub-pixel SP3 of the fifth pixel PXL5, to repair the third sub-pixel SP3 of the fifth pixel PXL5. For example, in pixels PXL4 and PXL8, the first sub-pixel SP1 and the third sub-pixel SP3 can be converted. That is, in pixels PXL4 and PXL8, blue light can be emitted from the first sub-pixel SP1, red light can be emitted from the third sub-pixel SP3, and the grayscale of the blue light in each of the converted pixels PXL4 and PXL8 can be increased (e.g., from 50 to 53). To this end, in pixels PXL4 and PXL8, a third color conversion layer that emits blue light can be set in the first sub-pixel SP1, and a first color conversion layer that emits red light can be set in the third sub-pixel SP3.
[0125] Additionally, to fix the second sub-pixel SP2 of the fifth pixel PXL5, the grayscale of the fourth sub-pixel SP4 of the fifth pixel PXL5 can be increased (e.g., from 25 to 50).
[0126] Figure 11 This is a diagram illustrating a second type of transformation between sub-pixels within a pixel according to one embodiment.
[0127] Figure 11 It shows Figure 12 The fifth pixel PXL5 is a sub-pixel in the image. Figure 11 The left image illustrates the fifth pixel PXL5 before the application of the second type conversion, and Figure 11 The right image illustrates the fifth pixel PXL5 after applying the second type of transformation.
[0128] like Figure 11 As shown in the left image, the first sub-pixel SP1 may not emit light, while the second sub-pixel SP2 may emit green light.
[0129] If the second type of conversion is applied Figure 11 As shown in the right image, the color of the light emitted from the second sub-pixel SP2 can be changed (from green to red).
[0130] Figure 12 It shows that it has been applied. Figure 11 The diagram showing the repair of the second type of conversion in the image.
[0131] exist Figure 12 In this implementation, the first sub-pixel SP1 of the fifth pixel PXL5 may be defective. In this case, the black matrix can be set in the first sub-pixel SP1 of the fifth pixel PXL5.
[0132] A second type of conversion can be performed to repair the first sub-pixel SP1 of the fifth pixel PXL5. For example, in the fifth pixel PXL5, the first sub-pixel SP1 and the second sub-pixel SP2 can be converted. That is, in the fifth pixel PXL5, the second sub-pixel SP2 can emit red light. Therefore, in the fifth pixel PXL5, the first color conversion layer emitting red light can be set in the second sub-pixel SP2. In addition, the black matrix BM can be set in the first sub-pixel SP1. Furthermore, the grayscale of the green light emitted from the fourth sub-pixel SP4 can be increased (from 25 to 50).
[0133] Figure 13 It is along Figure 12 A cross-sectional view of line D-D' in the diagram.
[0134] Reference Figure 13 Instead of emitting light from the first sub-pixel SP1, red light can be emitted from the second sub-pixel SP2.
[0135] The first color conversion layer CCL1 may be disposed in the second sub-pixel SP2. The first color conversion layer CCL1 may include a material that emits red light.
[0136] The black matrix BM can be set to overlap with the first color conversion layer CCL1 and the first light-emitting element LD1 of the first sub-pixel SP1.
[0137] Figure 14 This is a diagram illustrating a third type of transformation between sub-pixels within a pixel according to one embodiment.
[0138] Figure 14 It shows Figure 15 The fifth pixel PXL5 is a sub-pixel in the image. Figure 14 The left image shows the fifth pixel PXL5 before the application of the third type conversion, and Figure 14 The right image shows the fifth pixel PXL5 after applying the third type transformation.
[0139] like Figure 14 As shown in the left image, the third sub-pixel SP3 may not emit light, while the fourth sub-pixel SP4 may emit green light.
[0140] like Figure 14 As shown in the right figure of the application of the third type of conversion, the color of the light emitted from the fourth sub-pixel SP4 can be changed (from green to blue).
[0141] Figure 15 This shows the application. Figure 14 The view of the repair of the third type of conversion. Figure 15In this implementation, the third sub-pixel SP3 of the fifth pixel PXL5 may be defective. In this case, the black matrix can be set in the third sub-pixel SP3 of the fifth pixel PXL5.
[0142] A third type of conversion can be performed to repair the third sub-pixel SP3 of the fifth pixel PXL5. For example, in the fifth pixel PXL5, the third sub-pixel SP3 and the fourth sub-pixel SP4 can be converted. That is, in the fifth pixel PXL5, light can be emitted from the third sub-pixel SP3 but not from the fourth sub-pixel SP4. To this end, in the fifth pixel PXL5, a third color conversion layer for emitting blue light can be set in the fourth sub-pixel SP4. In addition, the black matrix BM can be set in the third sub-pixel SP3. Furthermore, the grayscale of the green light emitted from the second sub-pixel SP2 can be increased (from 25 to 50).
[0143] Figure 16 It is along Figure 15 A cross-sectional view of line E-E' in the diagram.
[0144] Reference Figure 16 Instead of emitting light from the third sub-pixel SP3, blue light can be emitted from the fourth sub-pixel SP4.
[0145] The third color conversion layer CCL3 can be set in the fourth sub-pixel SP4. The third color conversion layer CCL3 may include a material that emits blue light.
[0146] The black matrix BM can be configured to overlap with the third color conversion layer CCL3 of the third sub-pixel SP3 and the third light-emitting element LD3.
[0147] According to one embodiment of the display device, in order to repair defective sub-pixels, as referenced... Figure 3 As described, the first sub-pixel SP1 and the third sub-pixel SP3 can be converted (first type conversion), as shown in the reference. Figure 11 As described, the second sub-pixel SP2 and the first sub-pixel SP1 can be converted (second type conversion), and as referenced Figure 14 The third sub-pixel SP3 and the fourth sub-pixel SP4 can be converted (third type conversion).
[0148] Meanwhile, the current required to drive sub-pixels SP1 to SP4 (which drive transistors and control light-emitting elements LD1 to LD4 to emit light) can be different for each of the first sub-pixel SP1, the second sub-pixel SP2, the third sub-pixel SP3, and the fourth sub-pixel SP4.
[0149] For example, the first sub-pixel SP1, which emits red light, may require the largest current, followed by the second sub-pixel SP2 and the fourth sub-pixel SP4, which emit green light, and finally, the third sub-pixel SP3, which emits blue light, may require the smallest current. For instance, the current required by the second sub-pixel SP2 and the fourth sub-pixel SP4 may be approximately 0.66 times that of the first sub-pixel SP1, and the current required by the third sub-pixel SP3 may be approximately 0.53 times that of the first sub-pixel SP1. Therefore, it is necessary to optimize the sub-pixel design for each of the sub-pixels SP1, SP2, SP3, and SP4, which have different current requirements.
[0150] The key factor in designing subpixels to meet current requirements can be the driving transistor DT (see...). Figure 2 The width / length (W / L) of the semiconductor layer of the driving transistor DT is proportional to the driving current flowing from the source electrode to the drain electrode. This means the required current can be satisfied when the driving current has the desired current. Therefore, even when the same data signal VDATA and driving voltage VDD are applied to the sub-pixels, the required current is different for each of sub-pixels SP1 to SP4. Thus, it is necessary to design the width / length (W / L) of the semiconductor layer of the driving transistor DT differently for each of sub-pixels SP1 to SP4.
[0151] However, in this embodiment, each of the sub-pixels SP1 to SP4 can be converted. That is, depending on the current requirement of the first sub-pixel SP1 (which has the highest current requirement), the first sub-pixel SP1, as well as the second sub-pixel SP2 and the third sub-pixel SP3, which will be converted, need to have the same width / length of the semiconductor layer of the driving transistor DT as the first sub-pixel SP1. Furthermore, since the fourth sub-pixel SP4 and the third sub-pixel SP3 are converted, the width / length of the semiconductor layer of the driving transistor DT can be designed to correspond to the fourth sub-pixel SP4 (which has a higher current requirement than the third sub-pixel SP3).
[0152] Figure 17 It is a pixel layout diagram according to one implementation method. Figure 18 for Figure 17 A cross-sectional view of the first sub-pixel in the image. Figure 19 for Figure 17 A cross-sectional view of the fourth sub-pixel in the image.
[0153] Reference Figure 17The diagram shows the area where transistors for sub-pixels SP1 to SP4 are disposed. From the other side of the first direction DR1, the second circuit region SPCR_G1 of the second sub-pixel SP2, the third circuit region SPCR_B of the third sub-pixel SP3, the first circuit region SPCR_R of the first sub-pixel SP1, and the fourth circuit region SPCR_G2 of the fourth sub-pixel SP4 can be arranged. However, the various embodiments described in this specification are not limited to those shown. Figure 17 The circuit area layout and the arrangement of transistors within the circuit area are shown and can be varied according to the design.
[0154] The 1a driving transistor and the 1a switching transistor can be located in the first circuit region SPCR_R, the 1b driving transistor and the 1b switching transistor can be located in the second circuit region SPCR_G1, the 1c driving transistor and the 1c switching transistor can be located in the third circuit region SPCR_B, and the 1d driving transistor and the 1d switching transistor can be located in the fourth circuit region SPCR_G2.
[0155] The first light-emitting element LD1 can be located in the upper right, the second light-emitting element LD2 can be located in the upper left, the third light-emitting element LD3 can be located in the lower left, and the fourth light-emitting element LD4 can be located in the lower right. For example, the first light-emitting element LD1 can be located between the first circuit region SPCR_R and the fourth circuit region SPCR_G2, the second light-emitting element LD2 can be located between the second circuit region SPCR_G1 and the third circuit region SPCR_B, the third light-emitting element LD3 can be located between the second circuit region SPCR_G1 and the third circuit region SPCR_B, and the fourth light-emitting element LD4 can be located between the first circuit region SPCR_R and the fourth circuit region SPCR_G2. The areas of light-emitting elements LD1 to LD4 can be the same, but the various embodiments described in this specification are not limited to this.
[0156] As referenced above Figure 3 , 11As described in section 14, based on the required current of the first sub-pixel SP1, the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3 that will be converted need to have the same width / length of the semiconductor layer of the driving transistor as the first sub-pixel SP1. Furthermore, since the fourth sub-pixel SP4 and the third sub-pixel SP3 are converted, the width / length of the semiconductor layer of the driving transistor DT can be designed to correspond to the fourth sub-pixel SP4 (which has a higher current requirement than the third sub-pixel SP3). In other words, the width / length (W1a / L1a) of the 1a semiconductor layer SCL1_R of the driving transistor of the first sub-pixel SP1 can be the same as the width / length (W1a / L1a) of the 1b semiconductor layer SCL1_G1 of the driving transistor of the second sub-pixel SP2 and the 1c semiconductor layer SCL1_B of the driving transistor of the third sub-pixel SP3, and the width / length (W1a / L1a) of the 1a semiconductor layer SCL1_R of the driving transistor of the first sub-pixel SP1 can be greater than the width / length (W1b / L1b) of the 1d semiconductor layer SCL1_G2 of the driving transistor of the fourth sub-pixel SP4. For example, depending on the required current, the width / length (W1a / L1a) of the first semiconductor layer SCL1_R can be approximately 1.5 times greater than the width / length (W1b / L1b) of the 1d semiconductor layer SCL1_G2, but the various embodiments described herein are not limited to this. For example, the length L1a of the first semiconductor layer SCL1_R can be the same as the length L1b of the first semiconductor layer SCL1_G2, and the width W1a of the first semiconductor layer SCL1_R can be about 1.5 times the width W1b of the first semiconductor layer SCL1_G2, but the various embodiments of this specification are not limited thereto.
[0157] Simultaneously, the width of the first gate electrode of each of sub-pixels SP1 to SP4 can also be proportional to the width of each of the semiconductor layers SCL1_R, SCL1_G1, SCL1_B, and SCL1_G2 of the driving transistor. Therefore, the width W3a of gate electrode GE1_R (1a) can be the same as the width W3a of gate electrode GE1_G1 (1b) and gate electrode GE1_B (1c), and can be greater than the width W3b of gate electrode GE1_G2 (1d).
[0158] On the other hand, the width / length of the semiconductor layers of the switching transistors in sub-pixels SP1 to SP4 can be the same. That is, the width W2 and length L2 of the second semiconductor layers SCL2_R1, SCL2_G1, SCL2_B, and SCL2_G2 of the switching transistors in sub-pixels SP1 to SP4 can be the same. Therefore, the width of the second gate electrode of the switching transistor in each of sub-pixels SP1 to SP4 can be the same as the width of each of the semiconductor layers SCL2_R, SCL2_G1, SCL2_B, and SCL2_G2.
[0159] As described above, since the width / length (W1a / L1a) of the semiconductor layer SCL1_R of the driving transistor of the first sub-pixel SP1 can be greater than the width / length (W1b / L1b) of the semiconductor layer SCL1_G2 of the driving transistor of the fourth sub-pixel SP4, and the width / length (W1a / L1a) of the semiconductor layer SCL1_R of the driving transistor of the first sub-pixel SP1 can be the same as the width / length (W1a / L1a) of the semiconductor layer SCL1_G1 of the driving transistor of the second sub-pixel SP2 and the width / length (W1a / L1a) of the semiconductor layer SCL1_B of the driving transistor of the third sub-pixel SP3, as... Figure 17 As shown, the widths of the circuit regions SPCR_R, SPCR_G1, SPCR_B, and SPCR_G2 can also be different.
[0160] For example, the first circuit region SPCR_R can have a third width of 3F, the second circuit region SPCR_G1 can have a third width of 3F, the third circuit region SPCR_B can have a third width of 3F, and the fourth circuit region SPCR_G2 can have a second width of 2F.
[0161] According to various embodiments of this specification, the circuit regions SPCR_R, SPCR_G1, SPCR_B, and SPCR_G2 of sub-pixels SP1 to SP4 are designed taking into account the required current of sub-pixels SP1 to SP4 and the conversion method used for repair, thereby reducing the area (or width) of the fourth circuit region SPCR_G2. Therefore, there is an advantage in ensuring additional design space in the circuit region.
[0162] The specific cross-sectional structures of the first sub-pixel SP1 and the fourth sub-pixel SP4 will be described below.
[0163] refer to Figure 18 and 19 The lower LWL can be disposed on the substrate 111, the upper UPL can be disposed on the lower LWL, and the light-emitting elements LD1 and LD4 can be disposed on the upper UPL.
[0164] The lower LWL may include a buffer layer 112, one or more transistors DT_R and DT_G2, a gate insulating layer 113 and a first protective layer 140, and the upper UPL may include a lower connection electrode 151, a second protective layer 160, upper connection electrodes 171 and 175, a planarization layer 180, an adhesive layer 190, a circuit board PB, upper contact electrodes 211 and 215, a first electrode 201 and a second electrode 205.
[0165] A buffer layer 112 may be disposed on the substrate 111. The buffer layer 112 can minimize or delay the diffusion of moisture or oxygen through the substrate 111. The buffer layer 112 can be constructed by alternating stacks of silicon nitride (SiN). x ) and silicon dioxide (SiO) x It may be formed at least once, but the various embodiments described herein are not limited thereto.
[0166] Transistors can be disposed on buffer layer 112. Transistors can be driving transistors. For example, 1a transistor DT_R can be disposed in the first sub-pixel SP1, and 1d transistor DT_G2 can be disposed in the fourth sub-pixel SP4. 1a transistor DT_R may include a 1a semiconductor layer SCL1_R, a 1a gate electrode GE1_R, a 1a source electrode SE_R, and a 1a drain electrode DE_R, and 1d transistor DT_G2 may include a 1d semiconductor layer SCL1_G2, a 1d gate electrode GE1_G2, a 1d source electrode SE_G2, and a 1d drain electrode DE_G2.
[0167] Gate electrodes GE1_R and GE1_G2 can be disposed on buffer layer 112. Gate electrodes GE1_R and GE1_G2 can be made of semiconductors (such as silicon (Si)) or conductive metals (e.g., any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), alloys of two or more of them, or multilayers thereof).
[0168] A gate insulating layer 113 can be disposed on the gate electrodes GE1_R and GE1_G2. The gate insulating layer 113 can be formed of a single layer or multiple layers of inorganic materials, such as silicon oxide (SiO2). x Silicon nitride (SiN) x Gate insulating layer 113 can insulate the gate electrodes GE1_R and GE1_G2 from the semiconductor layers SCL1_R and SCL1_G2.
[0169] Semiconductor layers SCL1_R and SCL1_G2 can be disposed on the gate insulating layer 113. The semiconductor layers SCL1_R and SCL1_G2 are disposed on the gate insulating layer 113 in a predetermined pattern shape so as to overlap with the gate electrodes GE1_R and GE1_G2, respectively. The semiconductor layers SCL1_R and SCL1_G2 can be made of any semiconductor material including amorphous silicon, polycrystalline silicon, oxide, and organic materials, but the various embodiments described herein are not limited thereto.
[0170] The source electrodes SE_R and SE_G2, and the drain electrodes DE_R and DE_G2 can be disposed on the semiconductor layers SCL1_R and SCL1_G2, respectively. The source electrodes SE_R and SE_G2 can be configured to overlap with the other side of the semiconductor layers SCL1_R and SCL1_G2 in the first direction DR1, respectively, and the drain electrodes DE_R and DE_G2 can be configured to overlap with one side of the semiconductor layers SCL1_R and SCL1_G2 in the first direction DR1, respectively.
[0171] In this specification, gate electrodes GE1_R and GE1_G2 are described as being disposed below semiconductor layers SCL1_R and SCL1_G2, respectively, but are not limited thereto, and may be disposed on semiconductor layers SCL1_R and SCL1_G2, respectively. Source electrodes SE_R and SE_G2 and drain electrodes DE_R and DE_G2 may be connected to semiconductor layers SCL1_R and SCL1_G2, respectively, via gate insulating layer 113. Source electrodes SE_R and SE_G2 and drain electrodes DE_R and DE_G2 may be made of semiconductors such as silicon (Si), conductive metals (e.g., any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), alloys of two or more of these, or multilayers thereof.
[0172] A first protective layer 140 may be disposed on the source electrodes SE_R and SE_G2 and the drain electrodes DE_R and DE_G2. The first protective layer 140 may protect the underlying transistors DT_R and DT_G2 and provide a flat surface. According to one embodiment, the first protective layer 140 may be made of an organic material such as benzocyclobutene or photoacryloyl, but the various embodiments of this specification are not limited thereto.
[0173] The lower connection electrode 151 can be disposed on the first protective layer 140. The lower connection electrode 151 can be made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), an alloy of two or more of them, or a multilayer thereof. In each of the first sub-pixel SP1 and the fourth sub-pixel SP4, the lower connection electrode 151 can be electrically connected to the drain electrodes DE_R and DE_G2 through the first protective layer 140.
[0174] The second protective layer 160 may be disposed on the lower connecting electrode 151. The material of the second protective layer 160 may be one of the above-described examples of the first protective layer 140, but various embodiments of this specification are not limited thereto.
[0175] The first upper connecting electrode 171 and the second upper connecting electrode 175 can be disposed on the second protective layer 160. The first upper connecting electrode 171 and the second upper connecting electrode 175 can comprise the same material and can be disposed on the same layer. The first upper connecting electrode 171 and the second upper connecting electrode 175 can be made of at least one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), alloys of two or more of these, or multiple layers thereof. The first upper connecting electrode 171 can be electrically connected to the lower connecting electrode 151 through the second protective layer 160. A common voltage (or cathode voltage) can be applied to the second upper connecting electrode 175. The second upper connecting electrode 175 can be a low-potential voltage line, but various embodiments of this specification are not limited thereto.
[0176] The planarization layer 180 may be disposed on the first upper connecting electrode 171 and the second upper connecting electrode 175. The planarization layer 180 can minimize the movement of the element contact electrodes 220 and 230 and the light-emitting element 210 disposed on the planarization layer 180. The planarization layer 180 may include an organic insulating material, but various embodiments of this specification are not limited thereto.
[0177] The adhesive layer 190 can be disposed on the planarization layer 180. The circuit board PB, which will be described below, can be adhered to the surface of the adhesive layer 190 via the adhesive layer 190.
[0178] A circuit board PB can be disposed on the adhesive layer 190. A first electrode 201 and a second electrode 205 can be disposed inside the circuit board PB. The first electrode 201 can serve as an anode, and the second electrode 205 can serve as a cathode; however, various embodiments described herein are not limited to this, and reverse configurations are also possible. Light-emitting elements LD1 and LD4 can be disposed on the circuit board PB. The first light-emitting element LD1 can be disposed in the first sub-pixel SP1, and the fourth light-emitting element LD4 can be disposed in the fourth sub-pixel SP4. Light-emitting elements LD1 and LD4 can each include first regions LD1a and LD4a, second regions LD1b and LD4b, and active layers LD1c and LD4c inserted therebetween.
[0179] First regions LD1a and LD4a can be p-type electrodes (or p-type materials) and are connected to the first electrode 201, while second regions LD1b and LD4b can be n-type electrodes (or n-type materials) and are connected to the second electrode 205. In active layers LD1c and LD4c, electrons and holes generated by the current flowing between the first regions LD1a and LD4a connected to the first electrode 201 and the second regions LD1b and LD4b connected to the second electrode 205 can recombine, thereby enabling the active layers LD1c and LD4c to emit light. A first upper contact electrode 211 can be connected to the first regions LD1a and LD4a via the first electrode 201, and a second upper contact electrode 215 can be connected to the second regions LD1b and LD4b via the second electrode 205. The first upper contact electrode 211 and the second upper contact electrode 215 can be electrically connected to the upper connecting electrodes 171 and 175 respectively via the adhesive layer 190 and the planarization layer 180.
[0180] In this specification, the second upper connecting electrode 175 is described as being located on the same layer as the first upper connecting electrode 171; however, various embodiments of this specification are not limited to this, and the second upper connecting electrode 175 may also be located on the same layer as the lower connecting electrode 151. In this case, the second upper connecting electrode 175 may not be directly connected to the second upper contact electrode 215, and a separate connecting electrode may be added to electrically connect the second upper connecting electrode 175 to the second upper contact electrode 215. In some embodiments, the second upper connecting electrode 175 may be located on the same layer as the first upper connecting electrode 171, but a separate connecting electrode may be added to electrically connect the second upper connecting electrode 175 to the second upper contact electrode 215. The connecting electrode may be disposed between the planarization layer 180 and the adhesive layer 190.
[0181] In this embodiment, as described above, the width / length (W1a / L1a) of the semiconductor layer SCL1_R of the driving transistor of the first sub-pixel SP1 can be greater than the width / length (W1b / L1b) of the semiconductor layer SCL1_G2 of the driving transistor of the fourth sub-pixel SP4. When the lengths L1a and L1b are the same, the width W1a of the first semiconductor layer SCL1_R can be greater than the width W1b of the semiconductor layer SCL1_G2.
[0182] Furthermore, the width W3a of the first gate electrode GE1_R can be greater than the width W3b of the 1d gate electrode GE1_G2.
[0183] According to various embodiments of this specification, the circuit regions SPCR_R, SPCR_G1, SPCR_B, and SPCR_G2 of sub-pixels SP1 to SP4 are designed taking into account the required current of sub-pixels SP1 to SP4 and the conversion method used for repair, thereby reducing the area (or width) of the fourth circuit region SPCR_G2. Therefore, there is an advantage in ensuring additional design space in the circuit region.
[0184] The display device according to various embodiments of this specification can be described as follows.
[0185] According to various embodiments of this specification, a display device is provided, comprising: a substrate defining a first sub-pixel and a fourth sub-pixel on the substrate; an 1a transistor and a 1d transistor located on the substrate; a first light-emitting element connected to the 1a transistor and disposed on the first sub-pixel; and a fourth light-emitting element connected to the 1d transistor and disposed on the fourth sub-pixel, wherein each of the first light-emitting element and the fourth light-emitting element comprises an inorganic light-emitting element, emitting red or blue light from the first sub-pixel and emitting green or blue light from the fourth sub-pixel, each of the 1a transistor and the 1d transistor is a driving transistor, and the width of the 1a semiconductor layer of the 1a transistor is greater than the width of the 1d semiconductor layer of the 1d transistor.
[0186] In the display device according to various embodiments of this specification, the length of the 1a semiconductor layer may be the same as the length of the 1d semiconductor layer.
[0187] In the display device according to various embodiments of this specification, the 1a transistor may further include a 1a gate electrode on the 1a semiconductor layer, the 1d transistor may further include a 1d gate electrode on the 1d semiconductor layer, and the width of the 1a gate electrode may be greater than the width of the 1d gate electrode.
[0188] The display device according to various embodiments of this specification may further include a 2a transistor connected to a 1a gate electrode and a 2d transistor connected to a 1d gate electrode, wherein the width of the 2a semiconductor layer of the 2a transistor may be the same as the width of the 2d semiconductor layer of the 2d transistor.
[0189] In the display device according to various embodiments of this specification, the length of the 2a semiconductor layer may be the same as the length of the 2d semiconductor layer.
[0190] In the display device according to various embodiments of this specification, the 2a transistor and the 2d transistor may be switching transistors.
[0191] The display device according to various embodiments of this specification may further include a second sub-pixel defined on a substrate, a 1b transistor on the substrate, and a second light-emitting element connected to the 1b transistor and disposed on the second sub-pixel. The second light-emitting element may include an inorganic light-emitting element, green light or red light may be emitted from the second sub-pixel, the 1b transistor may be a driving transistor, and the width of the 1b semiconductor layer of the 1b transistor may be greater than the width of the 1d semiconductor layer.
[0192] In the display device according to various embodiments of this specification, the width of the 1b semiconductor layer may be the same as the width of the 1a semiconductor layer.
[0193] In the display device according to various embodiments of this specification, the length of the 1b semiconductor layer may be the same as the length of the 1a semiconductor layer.
[0194] In the display device according to various embodiments of this specification, the second sub-pixel may be located to the left of the first sub-pixel in a plan view, and the fourth sub-pixel may be located below the first sub-pixel in a plan view.
[0195] The display device according to various embodiments of this specification may further include a third sub-pixel defined on a substrate, an Ic transistor on the substrate, and a third light-emitting element connected to the Ic transistor and disposed on the third sub-pixel, wherein the third light-emitting element may include an inorganic light-emitting element, blue light and red light may be emitted from the third sub-pixel, the Ic transistor may be a driving transistor, and the width of the Ic semiconductor layer of the Ic transistor may be greater than the width of the Id semiconductor layer.
[0196] In the display device according to various embodiments of this specification, the width of the 1c semiconductor layer may be the same as the width of the 1a semiconductor layer.
[0197] In the display device according to various embodiments of this specification, the length of the 1c semiconductor layer may be the same as the length of the 1a semiconductor layer.
[0198] The display device according to various embodiments of this specification may further include a first color conversion layer on a first light-emitting element, a second color conversion layer on a second light-emitting element, a third color conversion layer on a third light-emitting element, and a fourth color conversion layer on a fourth light-emitting element, wherein the first color conversion layer may emit red or blue light, the second color conversion layer may emit green or red light, the third color conversion layer may emit blue or red light, and the fourth color conversion layer may emit green or blue light.
[0199] In the display device according to various embodiments of this specification, the current required to drive the first sub-pixel may be greater than the current required to drive the second sub-pixel and the current required to drive the fourth sub-pixel.
[0200] In the display device according to various embodiments of this specification, the current required to drive the second sub-pixel may be greater than the current required to drive the third sub-pixel.
[0201] According to various embodiments of this specification, a display device is provided, the display device comprising: a first pixel, the first pixel including a first sub-pixel, a second sub-pixel, a third sub-pixel and a fourth sub-pixel, wherein a black matrix is disposed on at least one of these sub-pixels; and a second pixel, the second pixel being disposed adjacent to the first pixel and including the first sub-pixel, the second sub-pixel, the third sub-pixel and the fourth sub-pixel, wherein in the first pixel, a first color conversion layer is disposed on the first sub-pixel, a second color conversion layer is disposed on the second sub-pixel, a third color conversion layer is disposed on the third sub-pixel and a fourth color conversion layer is disposed on the fourth sub-pixel, and in the second pixel, the color conversion layer disposed on at least one of the first sub-pixel, the second sub-pixel, the third sub-pixel and the fourth sub-pixel is different from the color conversion layer disposed on the corresponding sub-pixel in the first pixel.
[0202] In the display device according to various embodiments of this specification, in the first pixel, a black matrix may be disposed in the first sub-pixel and the second sub-pixel, and in the second pixel, a third color conversion layer may be disposed in the first sub-pixel, and the first color conversion layer may be disposed in the third sub-pixel.
[0203] In the display device according to various embodiments of this specification, in the first pixel, a black matrix may be provided in the first sub-pixel and the fourth sub-pixel, and in the second pixel, a third color conversion layer may be provided in the first sub-pixel, and a first color conversion layer may be provided in the third sub-pixel.
[0204] In the display device according to various embodiments of this specification, in the first pixel, a black matrix may be disposed in the third sub-pixel and the fourth sub-pixel, and in the second pixel, a third color conversion layer may be disposed in the first sub-pixel, and a first color conversion layer may be disposed in the third sub-pixel.
[0205] In the display device according to various embodiments of this specification, in the first pixel, a black matrix may be disposed in the second sub-pixel and the third sub-pixel, and in the second pixel, a third color conversion layer may be disposed in the first sub-pixel, and a first color conversion layer may be disposed in the third sub-pixel.
[0206] According to various embodiments of this specification, a display device is provided, the display device comprising: a first pixel including a first sub-pixel, a second sub-pixel, a third sub-pixel and a fourth sub-pixel, wherein a black matrix is disposed on at least one of these sub-pixels, wherein the black matrix is disposed in one of the first to fourth sub-pixels, and a color conversion layer disposed in the sub-pixel where the black matrix is disposed is also disposed in another sub-pixel where the black matrix is not disposed.
[0207] In the display device according to various embodiments of this specification, a black matrix may be disposed in a first sub-pixel, and a color conversion layer of the first sub-pixel may also be disposed in a second sub-pixel.
[0208] In the display device according to various embodiments of this specification, the black matrix may be disposed in the third sub-pixel, and the color conversion layer of the third sub-pixel may also be disposed in the fourth sub-pixel.
[0209] In the display device according to various embodiments of this specification, pixels can be repaired by repairing the color conversion layer.
[0210] In the display device according to various embodiments of this specification, the image quality of the display panel can be improved by repairing pixels.
[0211] In the display device according to various embodiments of this specification, low power consumption can be achieved by repairing sub-pixels.
[0212] In the display devices according to various embodiments of this specification, the structure of each sub-pixel can be optimized based on the required current in the display device to which sub-pixel repair can be applied.
[0213] However, the effects available from this specification are not limited to those described above, and based on the following description, those skilled in the art will be able to clearly understand other effects not described.
[0214] Although various embodiments of this disclosure have been described with reference to the accompanying drawings, those skilled in the art will understand that the above-described technical configurations of this disclosure can be implemented in other specific forms without altering the technical spirit or essential characteristics of this disclosure. Therefore, it should be understood that the above embodiments are illustrative and not restrictive in all respects. Furthermore, the scope of this disclosure is described by the claims that follow, rather than by a detailed description. Moreover, the meaning and scope of the claims, as well as all changes or modifications derived from equivalent concepts, should be interpreted as being included within the scope of this disclosure.
Claims
1. A display device, comprising: A first pixel, comprising a first sub-pixel, a second sub-pixel, a third sub-pixel, and a fourth sub-pixel, wherein a black matrix is disposed on at least one of the first sub-pixel to the fourth sub-pixel; as well as The second pixel is disposed adjacent to the first pixel and includes the first sub-pixel, the second sub-pixel, the third sub-pixel, and the fourth sub-pixel. In the first pixel, a first color conversion layer is disposed on the first sub-pixel, a second color conversion layer is disposed on the second sub-pixel, a third color conversion layer is disposed on the third sub-pixel, and a fourth color conversion layer is disposed on the fourth sub-pixel. In the second pixel, the color conversion layer disposed on at least one of the first sub-pixel, the second sub-pixel, the third sub-pixel, and the fourth sub-pixel is different from the color conversion layer disposed on the corresponding sub-pixel in the first pixel.
2. The display device according to claim 1, wherein, In the first pixel, the black matrix is set in both the first sub-pixel and the second sub-pixel, and In the second pixel, the third color conversion layer is disposed in the first sub-pixel, and the first color conversion layer is disposed in the third sub-pixel.
3. The display device according to claim 1, wherein, In the first pixel, the black matrix is set in the first sub-pixel and the fourth sub-pixel, and In the second pixel, the third color conversion layer is disposed in the first sub-pixel, and the first color conversion layer is disposed in the third sub-pixel.
4. The display device according to claim 1, wherein, In the first pixel, the black matrix is disposed in the third sub-pixel and the fourth sub-pixel, and In the second pixel, the third color conversion layer is disposed in the first sub-pixel, and the first color conversion layer is disposed in the third sub-pixel.
5. The display device according to claim 1, wherein, In the first pixel, the black matrix is set in the second sub-pixel and the third sub-pixel, and In the second pixel, the third color conversion layer is disposed in the first sub-pixel, and the first color conversion layer is disposed in the third sub-pixel.
6. A display device, comprising: A first pixel, comprising a first sub-pixel, a second sub-pixel, a third sub-pixel, and a fourth sub-pixel, wherein a black matrix is disposed on at least one of the first sub-pixel to the fourth sub-pixel. The black matrix is set in one of the first to the fourth sub-pixels, and A color conversion layer is disposed in a sub-pixel on which the black matrix is disposed, and is also disposed in another sub-pixel on which the black matrix is not disposed.
7. The display device according to claim 6, wherein, The black matrix is set in the first sub-pixel, and The color conversion layer of the first sub-pixel is also disposed in the second sub-pixel.
8. The display device according to claim 6, wherein, The black matrix is set in the third sub-pixel, and The color conversion layer of the third sub-pixel is also disposed in the fourth sub-pixel.
9. A display device, comprising: A substrate, wherein a first sub-pixel and a fourth sub-pixel of a first pixel are defined on the substrate; 1a transistor and 1d transistor on the substrate; as well as A first light-emitting element connected to the 1a transistor on the first sub-pixel and a fourth light-emitting element connected to the 1d transistor on the fourth sub-pixel. Each of the first light-emitting element and the fourth light-emitting element includes an inorganic light-emitting element. The first light or the third light is emitted from the first sub-pixel. The second light or the third light is emitted from the fourth sub-pixel. Each of transistors 1a and 1d is a driving transistor, and The width of the 1a semiconductor layer of the 1a transistor is greater than the width of the 1d semiconductor layer of the 1d transistor.
10. The display device according to claim 9, wherein, The length of the 1a semiconductor layer is the same as the length of the 1d semiconductor layer.
11. The display device according to claim 9, wherein, The 1a transistor further includes a 1a gate electrode on the 1a semiconductor layer, and the 1d transistor further includes a 1d gate electrode on the 1d semiconductor layer, wherein the width of the 1a gate electrode is greater than the width of the 1d gate electrode.
12. The display device according to claim 11, further comprising: Transistor 2a is connected to the gate electrode of 1a; and a 2d transistor connected to the 1d gate electrode, wherein the width of the 2a semiconductor layer of the 2a transistor is the same as the width of the 2d semiconductor layer of the 2d transistor.
13. The display device according to claim 12, wherein the length of the 2a semiconductor layer is the same as the length of the 2d semiconductor layer.
14. The display device according to claim 12, wherein each of the 2a transistor and the 2d transistor is a switching transistor.
15. The display device of claim 9, further comprising: The second sub-pixel is defined on the substrate; 1b transistor located on the substrate; And a second light-emitting element connected to the 1b transistor and disposed on the second sub-pixel, wherein the second light-emitting element includes the inorganic light-emitting element, emitting green or red light from the second sub-pixel, the 1b transistor is the driving transistor, and the width of the 1b semiconductor layer of the 1b transistor is greater than the width of the 1d semiconductor layer.
16. The display device according to claim 15, wherein, The width of the 1b semiconductor layer is the same as the width of the 1a semiconductor layer.
17. The display device according to claim 16, wherein, The length of the 1b semiconductor layer is the same as the length of the 1a semiconductor layer.
18. The display device of claim 15, wherein the second sub-pixel is located to the left of the first sub-pixel in a plan view, and the fourth sub-pixel is located below the first sub-pixel in a plan view.
19. The display device of claim 9, wherein the required current for driving the first sub-pixel is greater than the required current for driving the second sub-pixel and the required current for driving the fourth sub-pixel.
20. The display device of claim 19, wherein the required current for driving the first sub-pixel is greater than the required current for driving the second sub-pixel and the required current for driving the fourth sub-pixel, and The required current for driving the second sub-pixel is greater than the required current for driving the third sub-pixel.
Citation Information
Patent Citations
Data Management Method for Network Attached Storage System
KR1020250055110A
