Display device

Abstract

A display device according to one embodiment of the present application includes a substrate, a light emitting element disposed on the substrate, a light conversion layer disposed on the light emitting element, an upper insulating film disposed on the light conversion layer, and a color filter layer disposed on the upper insulating film, wherein the color filter layer is in direct contact with the upper insulating film.

Description

Cross-reference to related applications

[0001] This application claims priority to Korean Patent Application No. 10-2025-0056063, filed on April 29, 2025, the entire contents of which are incorporated herein by reference for all purposes. Technical Field

[0002] This specification relates to a display device. Background Technology

[0003] With the development of the information society, the demand for display devices for displaying images is increasing, and various types of display devices are being used, such as liquid crystal display (LCD) devices and organic light-emitting diode (OLED) display devices.

[0004] Among these display devices, OLED displays, being self-emissive, offer advantages such as wider viewing angles and higher contrast ratios. Furthermore, they are lighter and thinner than LCD devices because they do not require a separate backlight, and they consume less power. Additionally, OLED displays can be driven at low voltages, have faster response times, and, most importantly, are inexpensive to manufacture.

[0005] However, since OLED display devices using organic materials are prone to defective pixels, such as oxidation between the organic light-emitting layer and electrodes due to moisture and oxygen penetration, various technical configurations are needed to minimize this penetration.

[0006] To address the aforementioned issues, display devices utilizing light-emitting diodes (LEDs) made of inorganic materials as light-emitting elements have recently been researched and developed. These light-emitting display devices are attracting attention as next-generation display devices due to their high image quality and high reliability. Summary of the Invention

[0007] This specification relates to a display device capable of suppressing or preventing color mixing between adjacent pixels (subpixels).

[0008] This specification also relates to providing a display device capable of improving color reproduction.

[0009] This specification also relates to providing a display device with reduced thickness.

[0010] The purpose of this specification is not limited to the above-described purposes, and other technical purposes can be inferred from the following embodiments.

[0011] According to one embodiment of this specification, a display device is provided, comprising: a substrate; a light-emitting element disposed on the substrate; a light conversion layer disposed on the light-emitting element; an upper insulating film disposed on the light conversion layer; and a color filter layer disposed on the upper insulating film, wherein the color filter layer is in direct contact with the upper insulating film.

[0012] According to another embodiment of this specification, a display device is provided, comprising: a substrate having a first sub-pixel and a second sub-pixel disposed thereon; a light-emitting element disposed in each of the first and second sub-pixels on the substrate; a light conversion layer disposed on the light-emitting element and including a first light conversion layer disposed in the first sub-pixel and a second light conversion layer disposed in the second sub-pixel; an upper insulating film disposed on the light conversion layer; a color filter layer disposed on the upper insulating film and including a first color filter layer disposed in the first sub-pixel and a second color filter layer disposed in the second sub-pixel; and a black matrix disposed on the upper insulating film, separating the first light conversion layer from the second light conversion layer and separating the first color filter layer from the second color filter layer.

[0013] Details of other embodiments are included in the detailed description and accompanying drawings.

[0014] According to various embodiments of this specification, color mixing between adjacent pixels (subpixels) can be suppressed or prevented.

[0015] According to various embodiments of this specification, tone reproduction can be improved.

[0016] According to various embodiments of this specification, the thickness of the display device can be reduced.

[0017] According to various embodiments of this specification, by preventing color mixing between adjacent sub-pixels, the display device can be driven at low power levels, thereby reducing power consumption.

[0018] However, the effects available from this specification are not limited to those described above, and based on the following description, those skilled in the art will be able to clearly understand other effects not described. Attached Figure Description

[0019] Figure 1 This is a plan view of a display device according to one embodiment.

[0020] Figure 2 This is an enlarged plan view of the pixels of a display device according to one embodiment.

[0021] Figure 3 It is along Figure 2 The cross-sectional view taken by line AA′ in the diagram.

[0022] Figure 4 yes Figure 3 A magnified view of region Q1 in the image.

[0023] Figures 5 to 7 This is a view illustrating each operation of the process of manufacturing a display device according to one embodiment.

[0024] Figure 8 The display device according to another embodiment is along a path similar to... Figure 2 The cross-sectional view taken by line AA′ in the diagram. Detailed Implementation

[0025] In the following description, embodiments will be described with reference to the accompanying drawings. In this specification, when a component (or area, layer, part, etc.) is described as "on another component," "connected" or "attached to" another component, it means that the component can be directly connected / attached to another component, or that another component can be disposed between them.

[0026] The same reference numerals denote the same parts. Additionally, in the drawings, the thickness, scale, and dimensions of parts are exaggerated for effective description of the technical content. The term "and / or" includes all or one or more combinations that can be defined by the associated configuration.

[0027] Terms such as “first” and “second” may be used to describe various components, but these components are not limited by these terms. These terms are used only for the purpose of distinguishing one component from another. For example, a first component may be referred to as a second component, and similarly, a second component may be referred to as a first component without departing from the scope of the various embodiments. Unless the context clearly indicates otherwise, the singular includes the plural.

[0028] Terms such as “below,” “under,” “above,” and “on top” are used to describe the relationships between the parts shown in the accompanying drawings. These terms are relative concepts and are described with respect to the orientation of the markings in the drawings.

[0029] It should be understood that terms such as “comprising” or “having” are intended to specify the presence of features, quantities, steps, operations, components, parts or combinations thereof described in the specification, and do not preclude the possibility of the existence or addition of one or more other features, quantities, steps, operations, components, parts or combinations thereof.

[0030] Figure 1 This is a plan view of a display device according to one embodiment.

[0031] Reference Figure 1The display device 10 according to one embodiment of this specification can be applied to TVs, signage, mobile terminals such as cellular phones or smartphones, computer displays such as laptops or desktop computers, head-up displays (HUDs) for vehicles, display backlight units, virtual reality (VR), augmented reality (AR), or mixed reality (MR) displays, etc. However, even if new product types are developed in the future, the configuration of the embodiments described herein can be applied in the same manner to any device with display capabilities.

[0032] The display device 10 may use miniature light-emitting diodes (LEDs) as display elements, but is not limited to this.

[0033] The display device 10 may include a flexible display fabricated on a thin, flexible substrate. The flexible display retains the characteristics of a conventional flat panel display and can be bent or rolled like paper.

[0034] The display device 10 may include a display area DA and a non-display area NDA in which a plurality of pixels PX are disposed. The display device 10 may include a substrate 101 providing support, on which the plurality of pixels PX may be disposed.

[0035] The display area DA can display images, videos, pictures, etc., and includes multiple pixels (PX). The non-display area NDA does not display on the screen and can also be referred to as the border area. The non-display area NDA can be set around the display area DA, but is not limited to this. The non-display area NDA can be set to surround the display area DA, but is not limited to this.

[0036] The non-display area NDA can be defined as an area on the substrate 101 that does not include the display area DA, and can have a narrower width (or size) than the display area DA, but is not limited thereto.

[0037] A pixel PX can be composed of multiple sub-pixels (SP1, SP2, and SP3), and these sub-pixels (SP1, SP2, and SP3) can emit light of different first, second, and third colors, respectively. For example, sub-pixels (SP1, SP2, and SP3) can emit red, blue, and green light, respectively. The first sub-pixel SP1 emits red light, the second sub-pixel SP2 emits green light, and the third sub-pixel SP3 emits blue light.

[0038] However, the various embodiments described in this specification are not limited thereto, and the pixel PX may also include sub-pixels that emit white light. The sub-pixels (SP1, SP2, and SP3) may be arranged sequentially along the first direction DR1.

[0039] Each of the sub-pixels (SP1, SP2 and SP3) may be provided with at least one light-emitting element.

[0040] Pixel PX can be repeatedly set in the first direction DR1 and the second direction DR2. Specifically, each of the sub-pixels (SP1, SP2, and SP3) can be alternately set in the first direction DR1. Each of the sub-pixels (SP1, SP2, and SP3) can be repeatedly set in the second direction DR2.

[0041] The display device 10 may further include a gate line GL and a data line DL electrically connected to the sub-pixels (SP1, SP2, and SP3) of each pixel PX. The gate line GL and the data line DL can provide necessary signals to the sub-pixels (SP1, SP2, and SP3) of each pixel PX.

[0042] The gate line GL can extend along a first direction DR1 and can be repeatedly arranged along a second direction DR2. The data line DL can extend along the second direction DR2 and can be repeatedly arranged along the first direction DR1. The gate line GL and the data line DL can intersect each other.

[0043] The substrate 101 is an array substrate on which transistors are formed, and can be made of plastic or glass materials.

[0044] In one example, substrate 101 may comprise an opaque or colored polyimide material. In this case, display device 10 may also include a backplate attached to the rear surface of substrate 101 to maintain substrate 101 in a flat surface state.

[0045] In one example, the backsheet may include a plastic material, such as polyethylene terephthalate.

[0046] In one example, substrate 101 may be a glass substrate. For example, glass substrate 101 may be a thin glass substrate with a thickness of 100 μm or less, and may be flexible.

[0047] Furthermore, substrate 101 can be formed by bonding two or more substrates or by being divided into two or more layers.

[0048] Figure 2 This is an enlarged plan view of the pixels of a display device according to one embodiment. Figure 3 It is along Figure 2 The cross-sectional view taken by line AA′ in the diagram. Figure 4 yes Figure 3 A magnified view of region Q1 in the image.

[0049] exist Figure 4 In this paper, the circuit layer CL of the first sub-pixel SP1 will be described, and its description can be applied to the second sub-pixel SP2 and the third sub-pixel SP3 in essentially the same way.

[0050] Reference Figures 2 to 4 According to one embodiment, the display device 10 may include a substrate 101, a circuit layer CL, a light-emitting element 120, a diffusion layer 130, a dam BB, a protective layer 116, a scattering layer SCL, a light conversion layer QD, an upper insulating film 117, a black matrix BM, a color filter layer CF, and a cover layer OC.

[0051] The circuit layer CL may include transistors and wires for driving the light-emitting element 120. Furthermore, a planarization layer and multiple insulating layers may be disposed between the components included in the circuit layer CL. The circuit layer CL may be disposed on the substrate 101.

[0052] The circuit layer CL may include a light-shielding layer LS, a buffer layer 111, a driving transistor DT, a gate insulating layer 112, a first interlayer insulating layer 113a, a second interlayer insulating layer 113b, a first passivation layer 114a, a planarization layer 115, a reflective layer RF, and an adhesive layer AD.

[0053] A light-shielding layer LS may be disposed on substrate 101. The light-shielding layer LS may be disposed in each of a plurality of sub-pixels (SP1, SP2, and SP3). The light-shielding layer LS blocks light incident from below substrate 101 onto the active layer ACT of the driving transistor DT, as will be described below. The light-shielding layer LS blocks light incident onto the active layer ACT of the driving transistor DT, thereby minimizing leakage current.

[0054] A buffer layer 111 is disposed on the substrate 101 and the light-shielding layer LS. The buffer layer 111 reduces the penetration of moisture or impurities through the substrate 101. The buffer layer 111 may be, for example, a single layer or multiple layers of silicon oxide (SiO2). x ) or silicon nitride (SiN) x The buffer layer 111 may be formed, but is not limited to this. However, depending on the type of substrate 101 or the type of transistor, the buffer layer 111 may be omitted, but is not limited to this.

[0055] The driving transistor DT is disposed on the buffer layer 111. The driving transistor DT may include an active layer ACT, a gate electrode GE, a source electrode SE, and a drain electrode DE.

[0056] An active layer ACT is disposed on the buffer layer 111. The active layer ACT may be made of a semiconductor material such as oxide semiconductor, amorphous silicon or polycrystalline silicon, but is not limited thereto.

[0057] A gate insulating layer 112 is disposed on the active layer ACT. The gate insulating layer 112 electrically insulates the active layer ACT from the gate electrode GE, and can be composed of a single layer or multiple layers of silicon oxide (SiO2). x ) or silicon nitride (SiN) x (This can be formed, but is not limited to)

[0058] The gate electrode GE is disposed on the gate insulating layer 112. The gate electrode GE may be made of a conductive material such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr) or alloys thereof, but is not limited thereto.

[0059] A first interlayer insulating layer 113a and a second interlayer insulating layer 113b are disposed on the gate electrode GE. The first interlayer insulating layer 113a and the second interlayer insulating layer 113b include contact holes through which the source electrode SE and the drain electrode DE of the driving transistor DT contact the active layer ACT. The first interlayer insulating layer 113a and the second interlayer insulating layer 113b protect components located beneath them and can be made of a single layer or multiple layers of silicon oxide (SiO2). x ) or silicon nitride (SiN) x (This can be formed, but is not limited to)

[0060] The source electrode SE and drain electrode DE, which are electrically connected to the active layer ACT, are disposed on the second interlayer insulating layer 113b. The source electrode SE and drain electrode DE may be made of conductive materials such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or alloys thereof, but are not limited thereto.

[0061] Meanwhile, this specification describes a first interlayer insulating layer 113a and a second interlayer insulating layer 113b, that is, multiple insulating layers disposed between the gate electrode GE and the source electrode SE and the drain electrode DE. However, only one insulating layer may be disposed between the gate electrode GE and the source electrode SE and the drain electrode DE, and various embodiments of this specification are not limited thereto.

[0062] Furthermore, as shown in the figure, when multiple insulating layers (such as the first interlayer insulating layer 113a and the second interlayer insulating layer 113b) are disposed between the gate electrode GE and the source electrode SE and the drain electrode DE, an electrode can be additionally formed between the first interlayer insulating layer 113a and the second interlayer insulating layer 113b, and the additionally formed electrode can form a capacitor with another component disposed below the first interlayer insulating layer 113a or above the second interlayer insulating layer 113b.

[0063] An auxiliary electrode LE is disposed on the gate insulating layer 112. The auxiliary electrode LE electrically connects the light-shielding layer LS, located below the buffer layer 111, to one of the source electrode SE and the drain electrode DE, located on the second interlayer insulating layer 113b. For example, the light-shielding layer LS can be electrically connected to either the source electrode SE or the drain electrode DE via the auxiliary electrode LE so that it is not used as a floating gate, thereby minimizing the threshold voltage fluctuation of the driving transistor DT caused by the floating light-shielding layer LS. In the figures, the light-shielding layer LS is shown connected to the drain electrode DE, but it can also be connected to the source electrode SE, and is not limited thereto.

[0064] A first passivation layer 114a is disposed on the driving transistor DT. The first passivation layer 114a protects the components located beneath it and can be composed of a single layer or multiple layers of silicon oxide (SiO2). x ) or silicon nitride (SiN) x (This can be formed, but is not limited to)

[0065] A planarization layer 115 is disposed on the first passivation layer 114a. The planarization layer 115 can planarize the upper structure on the substrate 101 on which the driving transistor DT is disposed, and has a flat upper surface. The planarization layer 115 can be formed by a single layer or multiple layers, and can be made of, for example, photoresist or acrylamide organic material, but is not limited thereto.

[0066] A reflective layer RF is disposed on the planarization layer 115. The reflective layer RF can electrically connect the light-emitting element 120 to the driving transistor DT, and simultaneously reflect the light emitted from the light-emitting element 120 upward relative to the light-emitting element 120. The reflective layer RF can be made of a conductive material with excellent reflective properties, and can reflect the light emitted from the light-emitting element 120 upward relative to the light-emitting element 120.

[0067] A second passivation layer 114b is disposed on the reflective layer RF. The second passivation layer 114b is an insulating layer used to protect components located beneath it, and can be composed of a single layer or multiple layers of silicon oxide (SiO2). x ) or silicon nitride (SiN) x (This can be formed, but is not limited to)

[0068] An adhesive layer AD is disposed on the second passivation layer 114b. The adhesive layer AD can be applied to the front surface of the substrate 101 to fix the light-emitting element 120 disposed on the adhesive layer AD. The adhesive layer AD can be made of a photocurable adhesive material (which can be photocured). For example, the adhesive layer AD can be made of an acrylic-based material containing a photosensitizer, but is not limited thereto.

[0069] Multiple light-emitting elements 120 are disposed on an adhesive layer AD. The light-emitting elements 120 may be disposed in each of a plurality of sub-pixels. The multiple light-emitting elements 120 may emit light via an electric current, and include light-emitting elements 120 emitting red, green, blue, etc., and combinations of these elements may emit light of various colors, including white. For example, the multiple light-emitting elements 120 may be light-emitting diodes (LEDs) or micro-LEDs that emit light through inorganic materials; that is, the LED may include, but is not limited to, an inorganic film for emitting light.

[0070] The light-emitting element 120 may include a first semiconductor layer 121, a light-emitting layer 122, a second semiconductor layer 123, a first electrode 124, a second electrode 125, and an encapsulation film 126.

[0071] A first semiconductor layer 121 is disposed on an adhesive layer AD, and a second semiconductor layer 123 is disposed on the first semiconductor layer 121. The first semiconductor layer 121 and the second semiconductor layer 123 may be made of specific materials doped with n-type impurities and p-type impurities, respectively.

[0072] For example, the first semiconductor layer 121 and the second semiconductor layer 123 may be made of materials doped with n-type impurities and p-type impurities, respectively, such as gallium nitride (GaN), indium aluminum phosphide (InAlP), or gallium arsenide (GaAs). Furthermore, the p-type impurity may be magnesium, zinc (Zn), beryllium (Be), etc., and the n-type impurity may be silicon (Si), germanium, tin (Sn), etc., but the various embodiments in this specification are not limited thereto.

[0073] A light-emitting layer 122 is disposed between a first semiconductor layer 121 and a second semiconductor layer 123. The light-emitting layer 122 emits light by receiving holes and electrons from the first semiconductor layer 121 and the second semiconductor layer 123. The light-emitting layer 122 can be formed as a single-layer or multiple quantum well (MQW) structure, and can be made of, for example, indium gallium nitride (InGaN), gallium nitride (GaN), etc., but is not limited thereto.

[0074] A first electrode 124 is disposed on a first semiconductor layer 121. The first electrode 124 electrically connects the driving transistor DT to the first semiconductor layer 121. The first electrode 124 may be disposed on the upper surface of the first semiconductor layer 121 exposed from the light-emitting layer 122 and the second semiconductor layer 123. The first electrode 124 may be made of a conductive material, such as a transparent conductive material like ITO or IZO, titanium (Ti), gold (Au), silver (Ag), copper (Cu), or alloys thereof, but is not limited thereto.

[0075] A second electrode 125 is disposed on the second semiconductor layer 123. The second electrode 125 may be disposed on the upper surface of the second semiconductor layer 123. The second electrode 125 electrically connects the power line to the second semiconductor layer 123. The second electrode 125 may be made of a conductive material, such as a transparent conductive material like ITO or IZO, titanium (Ti), gold (Au), silver (Ag), copper (Cu), or alloys thereof, but is not limited thereto.

[0076] Next, an encapsulation film 126 is provided to surround the first semiconductor layer 121, the light-emitting layer 122, the second semiconductor layer 123, the first electrode 124, and the second electrode 125. The encapsulation film 126 may be made of an insulating material and may protect the first semiconductor layer 121, the light-emitting layer 122, and the second semiconductor layer 123. Furthermore, contact holes may be formed in the encapsulation film 126 to expose the first electrode 124 and the second electrode 125, allowing the first connecting electrode CE1 and the second electrode 125 to be electrically connected, and the second connecting electrode CE2 and the first electrode 124 to be electrically connected.

[0077] A first connecting electrode CE1 is disposed on the adhesive layer AD and the light-emitting element 120. One end of the first connecting electrode CE1 can be electrically connected to the second electrode 125 exposed by the encapsulation film 126. Although not shown, the other end of the first connecting electrode CE1 can be electrically connected to a power supply line.

[0078] A second connecting electrode CE2 is disposed on the adhesive layer AD and the light-emitting element 120. One end of the second connecting electrode CE2 can be electrically connected to the first electrode 124 exposed by the encapsulation film 126. The other end of the second connecting electrode CE2 can be electrically connected to the reflective layer RF through a contact hole formed in the adhesive layer AD and the second passivation layer 114b.

[0079] The reflective layer RF can be electrically connected to the driving transistor DT by contacting the source electrode SE of the driving transistor DT through a contact hole formed in the planarization layer 115. That is, the second connection electrode CE2 can be electrically connected to the driving transistor DT through the reflective layer RF, and the first electrode 124 can be electrically connected to the driving transistor DT.

[0080] A dam BB may be disposed around the light-emitting element 120. The dam BB may be disposed on the adhesive layer AD. The dam BB may be disposed around the light-emitting element 120. The dam BB may be disposed at a predetermined distance from the light-emitting element 120.

[0081] The dam BB can define dam openings BOP (BOP1, BOP2, BOP3). The dam openings BOP can expose portions of the light-emitting element 120 and the adhesive layer AD in the sub-pixels (SP1, SP2, and SP3).

[0082] For example, in the first sub-pixel SP1, a first dam opening BOP1 may expose a portion of the adhesive layer AD, and the light-emitting element 120 may be disposed on the portion of the adhesive layer AD exposed by the first dam opening BOP1. In the second sub-pixel SP2, a second dam opening BOP2 may expose a portion of the adhesive layer AD, and the light-emitting element 120 may be disposed on the portion of the adhesive layer AD exposed by the second dam opening BOP2. In the third sub-pixel SP3, a third dam opening BOP3 may expose a portion of the adhesive layer AD, and the light-emitting element 120 may be disposed on the portion of the adhesive layer AD exposed by the third dam opening BOP3.

[0083] The sidewalls of the embankment BB can be formed into an inverse-taper shape. Therefore, light leakage from the light-emitting element 120 into adjacent sub-pixels (SP1, SP2, and SP3) can be suppressed or prevented. Thus, higher color reproduction is possible, and light leakage defects can be suppressed or prevented.

[0084] The BB (Blocking Part) can be made of opaque materials to reduce color mixing between multiple subpixels, such as black resin, but is not limited to this.

[0085] A diffusion layer 130 may be disposed between the embankment BB and the light-emitting element 120. The diffusion layer 130 may be disposed inside the embankment openings BOP (BOP1, BOP2, BOP3). The diffusion layer 130 may be disposed around each light-emitting element 120. The diffusion layer 130 may be disposed surrounding the light-emitting element 120. Therefore, the embankment BB may be disposed surrounding the light-emitting element 120 and the diffusion layer 130.

[0086] The diffusion layers 130 disposed around the light-emitting elements 120 in each of the sub-pixels (SP1, SP2 and SP3) can be separated and spaced apart from each other.

[0087] The diffusion layer 130 may be configured to expose the upper portion of the light-emitting element 120, but is not limited thereto. The diffusion layer 130 may be disposed on the same layer as the light-emitting element 120. For example, both the diffusion layer 130 and the light-emitting element 120 may be disposed on the adhesive layer AD and may be in direct contact with the adhesive layer AD, but is not limited thereto.

[0088] The diffusion layer 130 may be selectively composed of TiO2 added to Si-HO. x Organic compounds (in which multiple fine metal particles are dispersed and diffused), materials including photoactive compounds (PAC) and polyimide (PI), sidewall diffusers from which TiOx has been removed, and materials including SiO x It is made of at least one of SiN insulating materials.

[0089] The diffusion layer 130 can reflect, refract, scatter, and diffract the light emitted from the light-emitting element 120, thereby improving the light extraction efficiency of the light-emitting element 120.

[0090] A protective layer 116 can be disposed on the light-emitting element 120, the diffusion layer 130, and the embankment BB. The protective layer 116 protects the components located beneath it and can be made of translucent epoxy resin or silicon dioxide (SiO2). x ) or silicon nitride (SiN) x It can be formed in single or multiple layers, but is not limited to this.

[0091] The scattering layer SCL (SCL1, SCL2, SCL3) can be disposed on the light-emitting element 120, and the light conversion layer QD (QD1, QD2) can be disposed on the scattering layer SCL.

[0092] The scattering layers SCL (SCL1, SCL2, SCL3) can scatter light emitted from the light-emitting element 120. The scattering layers SCL (SCL1, SCL2, SCL3) may include scattering particles that scatter light. The scattering particles may be made of titanium dioxide (TiO2), but are not limited to this.

[0093] Specifically, the scattering layers SCL (SCL1, SCL2, SCL3) can scatter anisotropic light incident on the scattering layers SCL (SCL1, SCL2, SCL3) into isotropic light. Anisotropic light is light whose intensity varies with direction. In contrast, isotropic light is light whose intensity is uniform in all directions.

[0094] Scattering particles included in the scattering layers SCL1, SCL2, and SCL3 can convert anisotropic light generated from the light-emitting element 120 and incident on the scattering layers SCL1, SCL2, and SCL3 into isotropic light. The light generated from the light-emitting element 120 can be anisotropic light whose intensity varies with direction. Anisotropic light can be incident on the scattering layers SCL1, SCL2, and SCL3, scattered by the scattering layers SCL1, SCL2, and SCL3, and converted into isotropic light whose intensity does not vary with direction.

[0095] A first scattering layer SCL1 can be disposed in a first sub-pixel SP1, a second scattering layer SCL2 can be disposed in a second sub-pixel SP2, and a third scattering layer SCL3 can be disposed in a third sub-pixel SP3. The first to third scattering layers SCL1, SCL2, and SCL3 can be separated from and spaced apart from each other. An upper insulating film 117 and a black matrix BM can be disposed between the first to third scattering layers SCL1, SCL2, and SCL3. The black matrix BM can be disposed in the regions where the first to third scattering layers SCL1, SCL2, and SCL3 are spaced apart from each other.

[0096] A first light conversion layer QD1 may be disposed on a first scattering layer SCL1, and a second light conversion layer QD2 may be disposed on a second scattering layer SCL2. No separate light conversion layer may be disposed on the third scattering layer SCL3. The first light conversion layer QD1 may be disposed in the first sub-pixel SP1, and the second light conversion layer QD2 may be disposed in the second sub-pixel SP2. This disclosure is not limited to the embodiments described above and shown; according to another embodiment, a separate light conversion layer may be disposed in the third sub-pixel SP3.

[0097] The light conversion layer QD (QD1, QD2) can convert the light emitted from the light-emitting element 120 into light of a color corresponding to each of the sub-pixels (SP1, SP2 and SP3).

[0098] For example, when the first sub-pixel SP1 emits red light, the second sub-pixel SP2 emits green light, and the third sub-pixel SP3 emits blue light, and the light-emitting element 120 emits blue light, the first light conversion layer QD1 can be disposed in the first sub-pixel SP1 and can convert blue light into red light, and the second light conversion layer QD2 can be disposed in the second sub-pixel SP2 and can convert blue light into green light. In this case, since the third sub-pixel SP3 emits blue light, a separate light conversion layer may not be necessary, but this is not a limitation.

[0099] The thickness of the third scattering layer SCL3 in the thickness direction (third direction DR3) can be greater than the thickness of the first scattering layer SCL1 and the second scattering layer SCL2.

[0100] The light conversion layer QD (QD1, QD2) may include quantum dots of different sizes and types, capable of converting light emitted from the light-emitting element 120 into light corresponding to the color of each of the sub-pixels (SP1, SP2, and SP3). For example, the light conversion layer QD may include a single layer of quantum dots comprising one or more of group III-V and group II-VI semiconductor nanocrystals, or multilayer quantum dots having a core / shell structure. However, the various embodiments in this specification are not limited thereto, nor do they specifically limit the type of quantum dots included in the light conversion layer QD.

[0101] Quantum dots are nanoparticles that exhibit photoluminescence, in which electrons excited to a higher energy level by external light return to a lower energy level to emit light. This property of quantum dots can be used to convert the wavelength (color) of light emitted from a light source in a display device.

[0102] An upper insulating film 117 may be disposed on the scattering layer SCL and the light conversion layer QD. The upper insulating film 117 may cover the upper surface and side surface of the scattering layer SCL (SCL1, SCL2, SCL3) and the light conversion layer QD (QD1, QD2). The upper insulating film 117 may be configured to separate the scattering layer SCL (SCL1, SCL2, SCL3) and the light conversion layer QD (QD1, QD2) disposed in each of the sub-pixels (SP1, SP2, and SP3).

[0103] The upper insulating film 117 can be disposed between the scattering layer SCL (SCL1, SCL2, SCL3) and the light conversion layer QD (QD1, QD2) disposed in each of the sub-pixels (SP1, SP2 and SP3), and can be in direct contact with the protective layer 116 located between the scattering layers SCL.

[0104] The upper insulating film 117 can suppress or prevent the emission of exhaust gases generated from the light conversion layer QD to the outside. The upper insulating film 117 can be made of inorganic materials, such as silicon nitride (SiN). x ), silicon dioxide (SiO) x ), silicon oxynitride (SiO) x N y (etc.), but not limited to these.

[0105] The upper insulating film 117 can be formed from a single layer or multiple layers.

[0106] The black matrix BM can be disposed on the upper insulating film 117. The black matrix BM can be disposed at the boundaries and peripheries of the sub-pixels (SP1, SP2 and SP3). The black matrix BM can be disposed between each of the scattering layers SCL (SCL1, SCL2, SCL3) and between each of the light conversion layers QD (QD1, QD2).

[0107] The black matrix BM can fill the gap between the first scattering layer SCL1, the second scattering layer SCL2 and the third scattering layer SCL3, thereby preventing light leakage between sub-pixels (SP1, SP2 and SP3).

[0108] The black matrix BM is a black insulating layer that may include, but is not limited to, black pigments and dyes. The black matrix BM can be set at the boundaries and peripheries of sub-pixels (SP1, SP2, and SP3) to suppress or prevent color mixing and light leakage between adjacent sub-pixels (SP1, SP2, and SP3).

[0109] The black matrix BM defines the matrix openings MOP (MOP1, MOP2, MOP3) that expose the upper insulating film 117.

[0110] The thickness of the black matrix BM can be greater than the thickness of the scattering layer SCL and the light conversion layer QD. The thickness of the black matrix BM can be greater than the combined thickness of the first scattering layer SCL1 and the first light conversion layer QD1, greater than the combined thickness of the second scattering layer SCL2 and the second light conversion layer QD2, and greater than the thickness of the third scattering layer SCL3. Here, the thickness of each component can refer to its width in the thickness direction (third direction DR3).

[0111] The black matrix BM can fill the space between the first to third scattering layers SCL1, SCL2 and SCL3, and even when filling the space between the first light conversion layer QD1 and the second light conversion layer QD2, the height of the upper surface of the black matrix BM can be greater than the height of the upper surface of the first to third scattering layers SCL1, SCL2 and SCL3 and greater than the height of the upper surface of the first light conversion layer QD1 and the second light conversion layer QD2.

[0112] Here, the upper surface of each component can be a surface in the direction of light emission. The upper surface of each component disposed on the protective layer 116 can be a surface opposite to the lower surface facing the protective layer 116.

[0113] Here, the height of the upper surface of each component disposed on the protective layer 116 can be relative to the height of the substrate 101 or relative to the height of the protective layer 116.

[0114] Depending on the thickness of the black matrix BM and the height of the upper surface of the black matrix BM, matrix openings MOP (MOP1, MOP2, MOP3) can be formed to expose the upper insulating film 117 disposed on the scattering layer SCL (SCL1, SCL2 and SCL3) and the light conversion layer QD (QD1 and QD2).

[0115] For example, in the first sub-pixel SP1, the first matrix opening MOP1 can expose the upper insulating film 117. In the second sub-pixel SP2, the second matrix opening MOP2 can expose the upper insulating film 117. In the third sub-pixel SP3, the third matrix opening MOP3 can expose the upper insulating film 117.

[0116] The matrix openings MOP (MOP1, MOP2, MOP3) can be larger than the dike openings BOP (BOP1, BOP2, BOP3). The first to third matrix openings MOP1, MOP2, and MOP3 can overlap with the first to third dike openings BOP1, BOP2, and BOP3 respectively in the thickness direction (third direction DR3).

[0117] For example, the first matrix opening MOP1 may be larger than the first embankment opening BOP1, and the first matrix opening MOP1 may overlap with the entire area of ​​the first embankment opening BOP1 in the thickness direction (third direction DR3). The second matrix opening MOP2 may be larger than the second embankment opening BOP2, and the second matrix opening MOP2 may overlap with the entire area of ​​the second embankment opening BOP2 in the thickness direction (third direction DR3). The third matrix opening MOP3 may be larger than the third embankment opening BOP3, and the third matrix opening MOP3 may overlap with the entire area of ​​the third embankment opening BOP3 in the thickness direction (third direction DR3).

[0118] The sidewall of the first embankment opening BOP1 can protrude further inward than the sidewall of the first matrix opening MOP1, the sidewall of the second embankment opening BOP2 can protrude further inward than the sidewall of the second matrix opening MOP2, and the sidewall of the third embankment opening BOP3 can protrude further inward than the sidewall of the third matrix opening MOP3.

[0119] The black matrix BM can protrude further than the color filter layer CF in the thickness direction (third direction DR3). That is, the height of the upper surface of the black matrix BM relative to the substrate 101 can be greater than the height of the upper surface of the color filter layer CF.

[0120] Therefore, it is easier to prevent color mixing between adjacent sub-pixels (SP1, SP2 and SP3).

[0121] Color filter layers CF (CF1, CF2, CF3) can be disposed on the upper insulating film 117. Color filter layers CF (CF1, CF2, CF3) can be disposed inside the matrix opening MOP and can be in direct contact with the upper insulating film 117.

[0122] Color filter layers CF (CF1, CF2, CF3) can directly contact the side surfaces of the black matrix BM. Color filter layers CF (CF1, CF2, CF3) can directly contact the black matrix BMs separated from each other and located in adjacent sub-pixels (SP1, SP2, and SP3). Color filter layers CF (CF1, CF2, CF3) can directly contact black matrix BMs that protrude further than color filter layers CF (CF1, CF2, CF3) in the thickness direction (third direction DR3).

[0123] A first color filter layer CF1 can be disposed in a first sub-pixel SP1, a second color filter layer CF2 can be disposed in a second sub-pixel SP2, and a third color filter layer CF3 can be disposed in a third sub-pixel SP3. The first color filter layer CF1 can be disposed inside a first matrix opening MOP1, the second color filter layer CF2 can be disposed inside a second matrix opening MOP2, and the third color filter layer CF3 can be disposed inside a third matrix opening MOP3.

[0124] Each of the first to third color filter layers CF1, CF2, and CF3 can transmit only light with a wavelength corresponding to the color of the light emitted from each of the sub-pixels (SP1, SP2, and SP3). For example, when the first sub-pixel SP1 emits red light, the second sub-pixel SP2 emits green light, the third sub-pixel SP3 emits blue light, and the light-emitting element 120 emits blue light, the first color filter layer CF1 can transmit only light with a wavelength corresponding to red, the second color filter layer CF2 can transmit only light with a wavelength corresponding to green, and the third color filter layer CF3 can transmit only light with a wavelength corresponding to blue.

[0125] The first to third color filter layers CF1, CF2, and CF3 can be separated and spaced apart from each other by a black matrix BM. That is, the black matrix BM can be set between the first to third color filter layers CF1, CF2, and CF3.

[0126] Because the color filter layer CF is in direct contact with the upper insulating film 117, the gap between the scattering layers SCL (SCL1, SCL2, SCL3) or the light conversion layers QD (QD1, QD2) and the color filter layer CF can be minimized. Therefore, the leakage of light passing through the scattering layers SCL (SCL1, SCL2, SCL3) and the light conversion layers QD (QD1, QD2) into the adjacent sub-pixels SP1, SP2, and SP3 before passing through the color filter layer CF can be minimized.

[0127] Furthermore, it minimizes color mixing between adjacent sub-pixels (SP1, SP2, and SP3) and improves color reproducibility, and enables the display device 10 to be driven at low power levels, thereby reducing power consumption. Additionally, it reduces the thickness of the display device 10.

[0128] Because the color filter layer CF is in direct contact with the upper insulating film 117, color mixing between adjacent sub-pixels (SP1, SP2, and SP3) can be prevented more effectively, even when the matrix opening MOP (MOP1, MOP2, MOP3) is larger than the dike opening BOP (BOP1, BOP2, BOP3). Furthermore, since the matrix opening MOP (MOP1, MOP2, MOP3) is larger than the dike opening BOP (BOP1, BOP2, BOP3), the brightness of the sub-pixels (SP1, SP2, and SP3) can be improved. In other words, color mixing between adjacent sub-pixels (SP1, SP2, and SP3) can be prevented, and the reduction in brightness is minimized or brightness is improved.

[0129] This specification describes a black matrix BM including black pigments and dyes, but various embodiments of this specification are not limited thereto. For example, the black matrix BM may be formed such that at least some regions of the first to third color filter layers CF1, CF2 and CF3 that transmit different colors of light are formed to be thickened in the thickness direction (third direction DR3).

[0130] In this configuration, the edge regions of the first to third color filter layers CF1, CF2, and CF3 can be respectively positioned around the boundaries of the sub-pixels (SP1, SP2, and SP3). That is, the edge regions of the first to third color filter layers CF1, CF2, and CF3 can be positioned in the regions spaced apart from each other by the scattering layers SCL (SCL1, SCL2, SCL3) and the light conversion layers QD (QD1, QD2). In this configuration, the thickness of the edge regions of the first to third color filter layers CF1, CF2, and CF3 positioned around the boundaries of the sub-pixels (SP1, SP2, and SP3) can be greater than the thickness of the remaining regions.

[0131] The black matrix BM can be separated from the scattering layers SCL (SCL1, SCL2, SCL3), light conversion layers QD (QD1, QD2), and color filter layers CF (CF1, CF2, CF3) located in adjacent sub-pixels (SP1, SP2, and SP3). The black matrix BM can be positioned between the scattering layers SCL (SCL1, SCL2, SCL3), light conversion layers QD (QD1, QD2), and color filter layers CF (CF1, CF2, CF3) located in adjacent sub-pixels (SP1, SP2, and SP3).

[0132] For example, the black matrix BM can be integrally formed to jointly separate the scattering layer SCL (SCL1, SCL2, SCL3), the light conversion layer QD (QD1, QD2), and the color filter layer CF (CF1, CF2, CF3) disposed in adjacent sub-pixels (SP1, SP2, SP3), but is not limited thereto.

[0133] Since the black matrix BM is integrally formed to cover the side surfaces of the scattering layers SCL (SCL1, SCL2, SCL3), the light conversion layers QD (QD1, QD2), and the color filter layers CF (CF1, CF2, CF3), light leakage from the middle of one of the scattering layers SCL (SCL1, SCL2, SCL3), the light conversion layers QD (QD1, QD2), and the color filter layers CF (CF1, CF2, CF3) to the adjacent sub-pixels (SP1, SP2, and SP3) can be minimized.

[0134] Therefore, it is possible to minimize the leakage of light that passes through at least some of the scattering layers SCL (SCL1, SCL2, SCL3), light conversion layers QD (QD1, QD2), and color filter layers CF (CF1, CF2, CF3) into adjacent sub-pixels (SP1, SP2, and SP3). In other words, it is possible to more smoothly prevent color mixing between adjacent sub-pixels (SP1, SP2, and SP3).

[0135] An overlay layer OC can be set on the color filter layer CF. The overlay layer OC can cover both the color filter layer CF and the black matrix BM.

[0136] In the following, a method for manufacturing a display device 10 according to one embodiment will be described. While describing the method for manufacturing a display device 10 according to one embodiment, details will be briefly provided or omitted. Figures 1 to 4 The description of the parts already described in the text.

[0137] Figures 5 to 7 This is a view illustrating each operation of the process of manufacturing a display device according to one embodiment.

[0138] First, refer to Figure 5 A circuit layer CL is formed on the substrate 101. Then, a light-emitting element 120 is disposed on the circuit layer CL. The light-emitting element 120 can be transferred to the circuit layer CL, specifically to the adhesive layer AD, and disposed in each of the sub-pixels (SP1, SP2, SP3).

[0139] After the light-emitting element 120 is transferred, the diffusion layer 130 is patterned and disposed around the light-emitting element 120, and a dam BB is formed between the patterned diffusion layers 130. By arranging the diffusion layers 130 and forming the dam BB, the side surface of the dam BB can be formed into an inverted cone shape.

[0140] As the embankment BB is patterned, embankment openings BOP (BOP1, BOP2, BOP3) can be formed.

[0141] A protective layer 116 may be formed on the embankment BB. The protective layer 116 may cover the entire embankment BB, the diffusion layer 130, and the light-emitting element 120.

[0142] Next, a scattering layer SCL and a light conversion layer QD can be formed on the protective layer 116. The scattering layer SCL and the light conversion layer QD can be patterned and disposed in each of the sub-pixels (SP1, SP2, and SP3). The scattering layer SCL and the light conversion layer QD disposed in each of the sub-pixels (SP1, SP2, and SP3) can be separated from each other and spaced apart, but are not limited thereto.

[0143] The scattering layer SCL and the light conversion layer QD can be patterned using digital lithography (DLT) tools, but are not limited to these methods.

[0144] Next, refer to Figure 6 The upper insulating film 117 can be formed on the patterned scattering layer SCL and light conversion layer QD. The upper insulating film 117 can cover the upper surface and side surface of the scattering layer SCL and light conversion layer QD. The upper insulating film 117 can also be disposed between the scattering layer SCL and light conversion layer QD disposed in adjacent sub-pixels (SP1, SP2 and SP3).

[0145] Next, a black matrix BM can be formed on the upper insulating film 117. The black matrix BM can be patterned and set at the boundaries and peripheries of the sub-pixels (SP1, SP2 and SP3).

[0146] The black matrix BM can be disposed between the scattering layer SCL and the light conversion layer QD disposed in adjacent sub-pixels (SP1, SP2, and SP3). The black matrix BM can fill the space between the scattering layer SCL and the light conversion layer QD disposed in adjacent sub-pixels (SP1, SP2, and SP3). The black matrix BM can fill the space between the scattering layer SCL and the light conversion layer QD, and protrudes further than the upper insulating film 117 in the thickness direction (third direction DR3).

[0147] The black matrix BM may include matrix openings MOP (MOP1, MOP2, MOP3) that expose the upper insulating film 117 by patterning. The matrix openings MOP (MOP1, MOP2, MOP3) may be formed by passing through the black matrix BM along the thickness direction (third direction DR3). The matrix openings MOP (MOP1, MOP2, MOP3) may be respectively disposed in sub-pixels (SP1, SP2, and SP3) and may expose at least a portion of the upper insulating film 117 disposed on the scattering layer SCL and / or the light conversion layer QD.

[0148] Next, refer to Figure 7Color filter layers CF (CF1, CF2, CF3) with colors corresponding to those emitted from sub-pixels (SP1, SP2, and SP3) are respectively disposed in the sub-pixels (SP1, SP2, and SP3). The color filter layers CF (CF1, CF2, CF3) can be patterned and formed in the sub-pixels (SP1, SP2, and SP3).

[0149] The color filter layers CF (CF1, CF2, CF3) can be disposed inside the matrix openings MOP (MOP1, MOP2, MOP3) and can be in direct contact with the upper insulating film 117 exposed by the matrix openings MOP (MOP1, MOP2, MOP3).

[0150] The black matrix BM can be formed integrally and disposed between the scattering layer SCL (SCL1, SCL2, SCL3), the light conversion layer QD (QD1, QD2), and the color filter layer CF (CF1, CF2, CF3) disposed in adjacent sub-pixels (SP1, SP2, SP3), and the corresponding components can be separated.

[0151] Other embodiments of this specification will be described below. Among the components included in these other embodiments, those referenced are... Figures 1 to 7 For content that is essentially the same, the same reference numerals are given, and overlapping content may be omitted or briefly described.

[0152] Figure 8 The display device according to another embodiment is along a path similar to... Figure 2 The cross-sectional view taken by line AA′ in the diagram.

[0153] Reference Figure 8 According to this embodiment, the display device 10_1 may include a dike opening BOP_1 (BOP1, BOP2, BOP3) defined by a dike BB and a matrix opening MOP_1 (MOP1, MOP2, MOP3) defined by a black matrix BM. The sidewalls of the dike openings BOP_1 (BOP1, BOP2, BOP3) and the sidewalls of the matrix openings MOP_1 (MOP1, MOP2, MOP3) may be aligned.

[0154] In other words, the dike openings BOP_1 (BOP1, BOP2, BOP3) and the matrix openings MOP_1 (MOP1, MOP2, MOP3) can have the same planar dimensions. The entire area of ​​the dike openings BOP_1 (BOP1, BOP2, BOP3) and the entire area of ​​the matrix openings MOP_1 (MOP1, MOP2, MOP3) can overlap in the thickness direction (third direction DR3).

[0155] Even in this case, since the color filter layer CF is in direct contact with the upper insulating film 117, color mixing between adjacent sub-pixels (SP1, SP2 and SP3) can be prevented, and brightness reduction can be minimized or brightness can be improved.

[0156] The display device according to various embodiments of this specification can be described as follows.

[0157] According to various embodiments of this specification, a display device is provided, comprising: a substrate; a light-emitting element disposed on the substrate; a light conversion layer disposed on the light-emitting element; an upper insulating film disposed on the light conversion layer; and a color filter layer disposed on the upper insulating film, wherein the color filter layer is in direct contact with the upper insulating film.

[0158] According to various embodiments of this specification, the display device may further include a dam disposed on a substrate, wherein the dam may define a dam opening, and a light-emitting element may be disposed inside the dam opening.

[0159] According to various embodiments of this specification, the display device may further include a diffusion layer disposed on a substrate, wherein the diffusion layer may surround a light-emitting element, and a dam may surround the diffusion layer and the light-emitting element.

[0160] According to various embodiments of this specification, the light-emitting element may be a light-emitting diode comprising an inorganic film for emitting light.

[0161] According to various embodiments of this specification, the display device may further include a black matrix disposed on an upper insulating film and defining a matrix opening that exposes a portion of the upper insulating film, wherein a color filter layer may be disposed inside the matrix opening.

[0162] According to various embodiments of this specification, the display device may further include a first sub-pixel and a second sub-pixel disposed on a substrate and emitting light of different colors, wherein a black matrix may be disposed at the boundary and periphery of the first sub-pixel and the second sub-pixel, the light conversion layer may be separate and may include a first light conversion layer disposed in the first sub-pixel and a second light conversion layer disposed in the second sub-pixel, and an upper insulating film and a black matrix may be disposed between the first light conversion layer and the second light conversion layer.

[0163] According to various embodiments of this specification, the color filter layer may be separate and may include a first color filter layer disposed in a first sub-pixel and a second color filter layer disposed in a second sub-pixel, and a black matrix may be disposed between the first color filter layer and the second color filter layer.

[0164] According to various embodiments of this specification, the black matrix may be integrally formed, disposed between the first light conversion layer and the second light conversion layer, and between the first color filter layer and the second color filter layer, and may protrude further than the color filter layer in the thickness direction.

[0165] According to various embodiments of this specification, the display device may further include a protective layer disposed on the light-emitting element, wherein a first light conversion layer and a second light conversion layer may expose a portion of the protective layer located between the first light conversion layer and the second light conversion layer, and an upper insulating film may be in direct contact with the portion of the protective layer located between the first light conversion layer and the second light conversion layer.

[0166] According to various embodiments of this specification, the sidewalls of the embankment opening may protrude further inward than the sidewalls of the matrix opening.

[0167] According to various embodiments of this specification, the sidewalls of the embankment opening and the sidewalls of the matrix opening can be aligned.

[0168] According to various embodiments of this specification, the color filter layer may be in direct contact with the black matrix.

[0169] According to various embodiments of this specification, the embankment and the light-emitting element may be disposed on the same layer.

[0170] According to various embodiments of this specification, the display device may further include a circuit layer disposed on a substrate, wherein the circuit layer may include a driving transistor disposed on the substrate, a planarization layer disposed on the driving transistor, and an adhesive layer disposed on the planarization layer, and the embankment and the light-emitting element may be disposed on the adhesive layer and may be in direct contact with the adhesive layer.

[0171] According to various embodiments of this specification, the edge region of at least one of the first and second color filter layers may be disposed in a region spaced apart from each other by the first and second light conversion layers, and has a thickness greater than the remaining region of the at least one of the first and second color filter layers.

[0172] According to various embodiments of this specification, the black matrix can be integrally formed to cover the side surfaces of the light conversion layer and the color filter layer.

[0173] According to various embodiments of this specification, a display device is provided, comprising: a substrate having a first sub-pixel and a second sub-pixel disposed thereon; a light-emitting element disposed in each of the first and second sub-pixels on the substrate; a light conversion layer disposed on the light-emitting element and including a first light conversion layer disposed in the first sub-pixel and a second light conversion layer disposed in the second sub-pixel; an upper insulating film disposed on the light conversion layer; a color filter layer disposed on the upper insulating film and including a first color filter layer disposed in the first sub-pixel and a second color filter layer disposed in the second sub-pixel; and a black matrix disposed on the upper insulating film, separating the first light conversion layer from the second light conversion layer and separating the first color filter layer from the second color filter layer.

[0174] According to various embodiments of this specification, the black matrix can be integrally formed, disposed between the first light conversion layer and the second light conversion layer, and between the first color filter layer and the second color filter layer, and can protrude further than the color filter layer in the thickness direction.

[0175] According to various embodiments of this specification, a black matrix may define a matrix opening that exposes a portion of an upper insulating film disposed on a light conversion layer, and a color filter layer may be disposed within the matrix opening.

[0176] According to various embodiments of this specification, the color filter layer may be in direct contact with the black matrix.

[0177] According to various embodiments of this specification, the color filter layer may be in direct contact with the portion of the upper insulating film exposed by the matrix openings.

[0178] According to various embodiments of this specification, the display device may further include a protective layer disposed between the light-emitting element and the light conversion layer, wherein the first light conversion layer and the second light conversion layer may expose a portion of the protective layer located between the first light conversion layer and the second light conversion layer, and the upper insulating film may be in direct contact with the portion of the protective layer located between the first light conversion layer and the second light conversion layer.

[0179] Although various embodiments have been described above with reference to the accompanying drawings, those skilled in the art will understand that the above technical configurations can be implemented in other specific forms without altering their technical spirit or essential characteristics. Therefore, it should be understood that the above embodiments are illustrative and not restrictive in all respects. Furthermore, the scope of the various embodiments is determined by the appended claims rather than the detailed description. Additionally, the meaning and scope of the claims, as well as all changes or modifications derived from their equivalents, should be interpreted as being included within the scope of the various embodiments.

Claims

1. A display device, comprising: substrate; A light-emitting element is disposed on the substrate; A light conversion layer is disposed on the light-emitting element; An upper insulating film is disposed on the light conversion layer; as well as A color filter layer is disposed on the upper insulating film. The color filter layer is in direct contact with the upper insulating film.

2. The display device according to claim 1, wherein, The display device further includes a dam portion disposed on the substrate, wherein the dam portion defines a dam portion opening, and The light-emitting element is disposed inside the opening of the embankment.

3. The display device according to claim 2, wherein, The display device further includes a diffusion layer disposed on the substrate, wherein the diffusion layer surrounds the light-emitting element, and The embankment surrounds the diffusion layer and the light-emitting element.

4. The display device according to claim 3, wherein, The light-emitting element is a light-emitting diode that includes an inorganic film for emitting light.

5. The display device according to claim 2, wherein, The display device further includes a black matrix disposed on the upper insulating film and defining a matrix opening that exposes a portion of the upper insulating film. The color filter layer is disposed inside the opening of the matrix.

6. The display device according to claim 5, wherein, The display device further includes a first sub-pixel and a second sub-pixel disposed on the substrate and emitting light of different colors. The black matrix is ​​positioned at the boundary and periphery of the first sub-pixel and the second sub-pixel. The light conversion layer is separate and includes a first light conversion layer disposed in the first sub-pixel and a second light conversion layer disposed in the second sub-pixel; and The upper insulating film and the black matrix are disposed between the first light conversion layer and the second light conversion layer.

7. The display device according to claim 6, wherein, The color filter layer is separate and includes a first color filter layer disposed in the first sub-pixel and a second color filter layer disposed in the second sub-pixel, and The black matrix is ​​disposed between the first color filter layer and the second color filter layer.

8. The display device according to claim 7, wherein, The black matrix is ​​integrally formed and is disposed between the first light conversion layer and the second light conversion layer, and between the first color filter layer and the second color filter layer, and protrudes further than the color filter layer in the thickness direction.

9. The display device according to claim 6, wherein, The display device further includes a protective layer disposed on the light-emitting element, wherein the first light conversion layer and the second light conversion layer expose a portion of the protective layer located between the first light conversion layer and the second light conversion layer, and The upper insulating film is in direct contact with the portion of the protective layer located between the first light conversion layer and the second light conversion layer.

10. The display device according to claim 5, wherein, The sidewall of the embankment opening protrudes further inward than the sidewall of the matrix opening.

11. The display device according to claim 5, wherein, The sidewall of the embankment opening is aligned with the sidewall of the matrix opening.

12. The display device according to claim 5, wherein, The color filter layer is in direct contact with the black matrix.

13. The display device according to claim 2, wherein, The embankment and the light-emitting element are disposed on the same layer.

14. The display device according to claim 13, wherein, The display device further includes a circuit layer disposed on the substrate, wherein the circuit layer includes a driving transistor disposed on the substrate, a planarization layer disposed on the driving transistor, and an adhesive layer disposed on the planarization layer. The embankment and the light-emitting element are disposed on the adhesive layer and are in direct contact with the adhesive layer.

15. The display device according to claim 7, wherein, The edge region of at least one of the first color filter layer and the second color filter layer is disposed in a region where the first light conversion layer and the second light conversion layer are spaced apart from each other, and has a thickness greater than the remaining region of the at least one of the first color filter layer and the second color filter layer.

16. The display device according to claim 7, wherein, The black matrix is ​​integrally formed to cover the side surfaces of the light conversion layer and the color filter layer.

17. A display device, comprising: A substrate on which a first sub-pixel and a second sub-pixel are disposed; A light-emitting element is disposed in each of the first sub-pixel and the second sub-pixel on the substrate; A light conversion layer is disposed on the light-emitting element and includes a first light conversion layer disposed in the first sub-pixel and a second light conversion layer disposed in the second sub-pixel; An upper insulating film is disposed on the light conversion layer; A color filter layer is disposed on the upper insulating film and includes a first color filter layer disposed in the first sub-pixel and a second color filter layer disposed in the second sub-pixel; A black matrix, disposed on the upper insulating film, separates the first light conversion layer and the second light conversion layer, and separates the first color filter layer and the second color filter layer.

18. The display device according to claim 17, wherein, The black matrix is ​​integrally formed and is disposed between the first light conversion layer and the second light conversion layer, and between the first color filter layer and the second color filter layer, and protrudes further than the color filter layer in the thickness direction.

19. The display device according to claim 17, wherein, The black matrix defines a matrix opening that exposes a portion of the upper insulating film disposed on the light conversion layer. The color filter layer is disposed inside the matrix opening.

20. The display device according to claim 19, wherein, The color filter layer is in direct contact with the black matrix.

21. The display device according to claim 19, wherein, The color filter layer is in direct contact with the portion of the upper insulating film exposed by the matrix opening.

22. The display device according to claim 17, wherein, The display device further includes a protective layer disposed between the light-emitting element and the light conversion layer. Wherein, the first light conversion layer and the second light conversion layer expose a portion of the protective layer located between the first light conversion layer and the second light conversion layer, and The upper insulating film is in direct contact with the portion of the protective layer located between the first light conversion layer and the second light conversion layer.

Images