A polyzwitterionic gel-based organic electrochemical transistors device, and a preparation method and application thereof

Abstract

The application belongs to the field of organic electrochemical transistors and neuromorphic devices, and discloses a kind of polyamphoteric ion gel-based organic electrochemical synapse device and its preparation method and application.The transistor includes a substrate layer, an electrode layer, a channel layer, a polyamphoteric ion gel dielectric layer, the polyamphoteric ion gel dielectric layer is arranged above the channel layer and covers at least the channel layer, and connects the channel layer with the gate, and constructs an ion transmission channel between the gate and the channel layer;The polyamphoteric ion gel dielectric layer is prepared by photopolymerization crosslinking reaction using a polyamphoteric ion gel precursor solution.The gel network can regulate ion migration, retention and release, so that the device realizes multi-level conductance regulation, double-pulse facilitation, short-term plasticity, long-term potentiation / inhibition, learning-forgetting under the action of the pulse voltage signal of the gate, and can be used for information coding, biological electrical signal classification and neuromorphic computing.

Description

Technical Field

[0001] This invention belongs to the field of organic electrochemical transistors and neuromorphic electronic devices, specifically relating to a polyzwitterionic gel-based organic electrochemical synaptic device, its preparation method, and its application. Background Technology

[0002] Organic electrochemical transistors (OETs) are a class of semiconductor devices that rely on ion-electron coupling transport to achieve signal modulation. They typically consist of a substrate, source, drain, gate, electrolyte, insulating layer, and organic semiconductor channel. The gate and the organic semiconductor channel form an ionic circuit via the electrolyte, while the source, drain, and the organic semiconductor channel form an electronic circuit. When a gate voltage is applied, ions in the electrolyte can enter or leave the organic semiconductor channel, causing bulk electrochemical doping or dedoping of the channel, thereby achieving large channel current modulation at relatively low operating voltages.

[0003] The ion migration, interfacial polarization, and channel conductivity changes in organic electrochemical transistors (OETs) are similar to the ion transport and synaptic weighting processes in biological synapses. Therefore, they can be used to simulate functions such as excitatory postsynaptic currents, double-pulse facilitation, short-term plasticity, and long-term plasticity. However, existing OETs typically use aqueous electrolytes or ordinary ionogels. Aqueous electrolytes suffer from problems such as volatilization, leakage, encapsulation difficulties, and inconvenience in array integration; while ordinary ionogels can achieve solid-state fabrication, the migration, retention, and relaxation behavior of free ions within them are difficult to effectively control, making it difficult to simultaneously achieve optimal device response speed, hold time, linear conductivity renewal, and cycle stability.

[0004] The repeating units of polyzwitterionic materials contain both fixed positively and negatively charged groups, resulting in overall electroneutrality. They can reversibly interact with added ions through electrostatic interactions, ion association, solvation, and local coordination. Combining polyzwitterionic networks with non-volatile ionic liquids holds promise for regulating ion migration, accumulation, retention, and release processes while maintaining high ion content, thereby providing multi-timescale conductivity modulation capabilities for organic electrochemical transistors.

[0005] Therefore, it is necessary to provide a structurally stable, easily integrated, and modulated zwitterionic gel-based organic electrochemical synaptic device that can control ion migration and relaxation processes to achieve repeatable short-term plasticity, long-term enhancement / inhibition, learning-forgetting, and associative learning, and further for use in bioelectric signal processing and neuromorphic computing. Summary of the Invention

[0006] To address the aforementioned technical shortcomings, this invention provides a zwitterionic gel-based organic electrochemical synaptic device and its preparation method.

[0007] To achieve the above-mentioned objectives, the technical solution adopted by the present invention is as follows: In a first aspect, the present invention provides a zwitterionic gel-based organic chemical synaptic device, comprising a substrate layer, an electrode layer, and a channel layer. The electrode layer includes a source, a drain, and a gate. The device also includes a zwitterionic gel dielectric layer, which is disposed above the channel layer and at least covers the channel layer, and connects the channel layer and the gate, thereby constructing an ion transport channel between the gate and the channel layer.

[0008] Further optimization involves preparing the zwitterionic gel dielectric layer using a zwitterionic gel precursor solution via photoinitiated polymerization and crosslinking reaction. The zwitterionic gel precursor solution comprises the following raw materials by weight percentage: 15%–35% zwitterionic monomer, 50%–70% ionic liquid, 8%–20% crosslinking agent, and 0.3%–2.0% photoinitiator.

[0009] In a further optimization, both the electrode layer and the channel layer are disposed above the substrate layer, the source and drain are respectively disposed on both sides of the channel layer, and the source and drain are respectively covered with an insulating layer.

[0010] Further optimization, the zwitterionic monomer is selected from at least one of [2-(methacryloyloxy)ethyl]dimethyl-(3-sulfopropyl)ammonium inner salt and 2-methacryloyloxyethyl phosphorylcholine; The ionic liquid is selected from at least one of 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imine salt, 1-ethyl-3-methylimidazolium dicyanamide salt, and 1-ethyl-3-methylimidazolium ethyl sulfate. The crosslinking agent is polyethylene glycol diacrylate; The photoinitiator is selected from at least one of 2-hydroxy-2-methyl-1-phenyl-1-propanone and 1-hydroxycyclohexylphenyl ketone.

[0011] Further optimization involves using poly[3,3′-bis[2-[2-(2-methoxyethoxy)ethoxy]ethoxy]-2,2′:5′,2″-terthiophene-5,5″-diyl](P(g2T-T)); The substrate layer is selected from any one of silicon wafer, glass substrate or flexible polymer substrate; the gate is any one of silver / silver chloride electrode, gold electrode or platinum electrode.

[0012] Secondly, the present invention provides a method for preparing a polyzwitter gel-based organic chemical synaptic device, comprising the following steps: (1) Chromium thin film and gold thin film are sequentially prepared on the substrate surface with photoresist pattern to form an electrode layer including source and drain. (2) An insulating layer is prepared on the substrate surface of the supporting electrode layer, and the corresponding area of ​​the channel is treated. An organic semiconductor solution is coated on the surface of the channel area and annealed to form a channel layer. (3) The zwitterionic gel precursor solution is coated on the surface of a substrate containing an insulating layer, a channel layer and an electrode layer, and then crosslinked and cured by ultraviolet light to form a zwitterionic gel dielectric layer. (4) The gate and the polyzwitter gel dielectric layer are docked and assembled to finally obtain the polyzwitter gel-based organic chemical synaptic device.

[0013] Further optimization involves preparing the organic semiconductor solution from poly[3,3′-bis[2-[2-(2-methoxyethoxy)ethoxy]ethoxy]-2,2′:5′,2″-terthiophene-5,5″-diyl] in an organic solvent, with a solution concentration of 8 mg / mL.

[0014] Further optimization is made by selecting at least one of chloroform, chlorobenzene, and o-dichlorobenzene.

[0015] Further optimization involves using ultraviolet light with a wavelength of 365–405 nm, an irradiation power of 100–500 mW, and an irradiation time of 10–6000 s.

[0016] Thirdly, this invention provides an application of a zwitterionic gel-based organic chemical synaptic device in neuromorphic computing and bioelectric signal processing.

[0017] Compared with the prior art, the beneficial effects of the present invention are as follows: (1) The organic electrochemical transistor prepared in this invention uses a zwitterionic gel as a solid dielectric layer. The zwitterionic gel is formed by photo-initiated polymerization and cross-linking of zwitterionic monomers, ionic liquids, cross-linking agents, and photoinitiators. Compared with traditional liquid electrolytes, the zwitterionic gel has better morphological stability and non-volatility, which can effectively reduce the problems of easy volatility, easy leakage, and difficulty in device packaging and integration of liquid electrolytes, and is conducive to improving the operational stability and device integration capability of organic electrochemical transistors. At the same time, the zwitterionic gel can form a stable ion transport interface with organic semiconductor channels, providing a new technical solution for the construction of solid organic electrochemical synaptic devices.

[0018] (2) This invention combines zwitterionic gel with a P(g2T-T) organic semiconductor channel capable of bulk electrochemical doping. Under the action of gate voltage, ions in the gel can migrate to the organic semiconductor channel and regulate the electrochemical doping state of the channel, thereby achieving continuous control of the channel conductivity. By adjusting the amplitude, width, frequency, interval, and number of gate pulses, the number of ions participating in channel doping and their relaxation process can be changed, enabling the device to exhibit various synaptic behaviors such as double-pulse facilitation, short-term plasticity, transition from short-term to long-term plasticity, learning-forgetting, long-term enhancement, and long-term inhibition. Compared with traditional transistors that only have a single switching function, the device described in this invention can realize dynamic information storage and plasticity regulation at multiple time scales, providing an effective device platform for simulating the learning and memory processes of biological synapses. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of the structure of the zwitterionic gel-based organic electrochemical synaptic device of the present invention; Figure 2 This is a schematic diagram of the ion-mediated conduction regulation mechanism of the zwitterionic gel-based organic electrochemical synaptic device of the present invention; wherein, (a) shows the biological synaptic transmission process, and (b) shows the initial state of the device, the gate pulse stimulation state, and the post-stimulation retention state in sequence. Figure 3 This is a schematic diagram of the UV curing process of the zwitterionic gel of the present invention and the chemical structure of its precursor components; wherein, (a) the zwitterionic gel precursor is cured to form a gel after being irradiated with ultraviolet light; (b) the chemical structural formulas of EMIM-TFSI, MPC, PEGDA and I184. Figure 4 The results are the test results of the basic electrical characteristics of the device of the present invention; wherein, (a) the device transfer characteristics and transconductance curve; (b) the device output characteristic curve; Figure 5 The results of the double-pulse facilitation test of the device of the present invention are as follows: (a) the double-pulse facilitation response and the definitions of A1 and A2 when the pulse interval is 50 ms and the pulse amplitude is -0.6 V; (b) the results of the double-pulse facilitation index changing with the pulse interval and the double-exponential fitting. Figure 6 The results of the multi-parameter controllable synaptic plasticity test of the device of the present invention are as follows: (a) frequency-dependent synaptic response under 10 Hz, 20 Hz and 100 Hz pulses; (b) amplitude-dependent synaptic response at gate pulse voltages of -0.3 V, -0.6 V and -0.9 V, respectively; (c) pulse number-dependent synaptic response under 1, 25, 50 and 100 pulses. Figure 7The results of the learning, memory, and erasure tests of the device of the present invention are shown; wherein, (a) the learning, memory, and forgetting process under repeated pulse training; and (b) the learning and erasure response of the device. Figure 8 The results of stability tests on the device of the present invention for 10 consecutive learn-erase cycles show the periodic changes in the device response under repeated enhancement and erase operations. Figure 9 This is a schematic diagram showing the continuous pulse response and current retention characteristics of different gel electrolyte devices in Example 1 and Comparative Examples 1-2. Reference numerals: 1. Substrate, 2. Source, 3. Drain, 4. Channel, 5. Insulating layer, 6. Zwitterionic gel dielectric layer, 7. Gate. Detailed Implementation

[0020] To enable those skilled in the art to more clearly understand the technical solution of the present invention, the present invention will be described in detail below with reference to specific embodiments. Example 1

[0021] This embodiment provides a zwitterionic gel-based organic electrochemical synaptic device, the structure of which is shown in Figure 1. An electrode layer is disposed above a substrate layer 1, comprising a source electrode 2 and a drain electrode 3, with insulating layers 5 covering the source electrode 2 and drain electrode 3 respectively. A P (g2T-T) channel layer 4 is disposed above the substrate layer 1, within the channel region between the source electrode 2 and drain electrode 3, and forms electrical connections with both the source electrode 2 and drain electrode 3. A zwitterionic gel dielectric layer 6 is disposed above the channel layer 4, simultaneously connecting the channel layer 4 and the gate electrode 7. The UV curing process of this zwitterionic gel and the corresponding chemical structures of its precursor components are shown in Figure 1. Figure 3 As shown. The fabrication steps of this organic electrochemical synaptic device are as follows: (1) Substrate pretreatment: Select silicon wafers and cut them into substrates with a size of 1.5 cm × 1.5 cm. Place them in acetone, ultrapure water and isopropanol solvents respectively for ultrasonic cleaning for 20 min to remove impurities and oil stains on the substrate surface. Then dry them with nitrogen gas for later use. (2) Plasma activation treatment: The dried silicon wafers are cleaned and activated using an oxygen plasma cleaner with a cleaning power of 45%; (3) Substrate surface modification: Prepare a mixed modification solution of hexamethyldisilazane and propylene glycol methyl ether acetate in a volume ratio of 1:4. Spin-coat the mixture onto the silicon wafer surface and anneal at 120°C for 5 min. (4) Photoresist patterning preparation: S181 photoresist was spin-coated on the modified silicon wafer at a speed of 4000 rpm for 45 s. After spin-coating, the wafer was baked at 110°C for 1 min to remove residual solvent from the photoresist. After the substrate cooled, a custom mask was attached and exposed using ultraviolet lithography at a power of 100 mW for 10 s. After development and drying, a substrate containing patterned photoresist was obtained. (5) Electrode layer deposition and lift-off: A 5 nm thick chromium transition layer and a 50 nm thick gold conductive layer are sequentially deposited on the surface of the patterned photoresist substrate using physical vapor deposition to form a complete metal thin film structure; then, excess photoresist and attached metal thin film are removed from the substrate surface by photolithography lift-off process to finally obtain an electrode substrate with patterned source 2 and drain 3. (6) Patterning of insulating layer: SU-8 photoresist is spin-coated on the substrate surface of the patterned electrode layer prepared above, and selective patterning is performed by photolithography using a mask. Only the SU-8 photoresist on both sides of the channel region is retained as the insulating layer 5, and the middle channel region is exposed. The channel length is 50 μm and the channel width is 500 μm. (7) Preparation of organic semiconductor channel layer: P(g2T-T) organic semiconductor material was dissolved in chloroform to prepare an organic semiconductor solution with a concentration of 8 mg / mL; the solution was spin-coated at 2000 rpm for 90 s onto the surface of the exposed channel area. After spin-coating, the solution was annealed at 80℃ for 30 min to remove the solvent and optimize the film morphology. The P(g2T-T) channel layer 4 was then cured. (8) Preparation of zwitterionic gel precursor solution: Weigh 100 mg of 2-methacryloyloxyethylphosphorylcholine (MPC), 250 mg of 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imine salt (EMIMTFSI), 55 mg of polyethylene glycol diacrylate (PEGDA) and 4 mg of 1-hydroxycyclohexylphenyl ketone (HCPK), mix all raw materials and stir at 70°C in the dark for 0.5 h to obtain a homogeneous zwitterionic gel precursor solution; (9) Gel dielectric layer curing and molding: Take 20 μL of the above-prepared zwitterionic gel precursor solution and cover it on the surface of the channel layer 4 and the surrounding insulating layer 5 by drop coating or spin coating, so that it covers at least the entire channel area; then irradiate with ultraviolet light with a wavelength of 365 nm for 5 min to form zwitterionic gel dielectric layer 6. (10) Device assembly: The silver / silver chloride electrode is used as the gate 7 and connected to the zwitterionic gel dielectric layer 6 to finally obtain the zwitterionic gel-based organic electrochemical synaptic device.

[0022] In the above-mentioned zwitterionic gel precursor, the mass percentages of MPC, EMIM-TFSI, PEGDA and I184 are 24.45 wt%, 61.12 wt%, 13.45 wt% and 0.98 wt%, respectively.

[0023] This embodiment further illustrates the ion regulation and synaptic plasticity operation process of the zwitterionic gel-based organic electrochemical synaptic device, and its ion regulation mechanism is as follows: Figure 2 As shown, 2(a) illustrates the biological synaptic transmission process, and 2(b) sequentially illustrates the initial state of the device, the gate pulse-stimulated state, and the post-stimulation retention state: ① When no gate stimulation is applied, the migratable ions in the zwitterionic gel are in a relatively balanced state; ② When a pulse voltage that promotes channel oxidative doping is applied to the gate, the anions in the gel migrate to the P(g2T-T) channel under the action of the electric field and enter or approach the channel bulk phase to compensate for the positive charge in the channel, thereby increasing the channel carrier concentration and source / drain current; ③ After the gate pulse is removed, some ions quickly return to the gel bulk, causing the channel conductivity to decay rapidly, forming short-term memory; other ions are slowly released due to the combined influence of the zwitterionic network, cross-linked structure, and internal channel interactions, allowing the device to retain conductivity changes for a longer period of time. By repeating or enhancing stimulation, the effective ion accumulation in the channel can be increased, and the transition from short-term plasticity to long-term enhancement can be achieved. When a gate stimulus of opposite polarity is applied, it can promote the extraction of ions from the channel or change the channel doping state, thereby reducing the channel conductivity and achieving long-term suppression or conductivity erasure. Example 2

[0024] This embodiment performs transfer characteristics, transconductance, output characteristics, and double-pulse facilitation tests on the device prepared in Example 1. The results are as follows: Figure 4 and Figure 5 As shown. During the device transfer characteristic test, the source-drain voltage V... DS -0.6 V, gate voltage V GS Scan from 0.2V to -0.8V. Figure 4 (a) It can be seen that as the gate voltage changes, the drain current is significantly modulated and a corresponding transconductance response appears, indicating that the zwitterionic gel can effectively establish ion coupling between the gate and the P(g2T-T) channel and has excellent electric field control capability.

[0025] The transfer curve test results show that the device exhibits a significant electrical hysteresis effect during forward and reverse gate voltage scanning. The hysteresis window remains stable within the effective operating voltage range of the device, and the normalized hysteresis area can reach 33.3%. This hysteresis originates from the hysteresis characteristics of ion migration and relaxation processes regulated by the zwitterionic gel dielectric layer, endowing the device with obvious gate voltage stimulation history dependence characteristics. It can simulate the short-term memory and short-term plasticity of biological synapses and stably realize typical synaptic biomimetic responses such as paired pulse facilitation.

[0026] Depend on Figure 4 (b) It can be seen that under different gate voltages, the drain current increases with the increase of the absolute value of the source-drain voltage and is regulated by the gate voltage, exhibiting typical output characteristics of organic electrochemical transistors.

[0027] In the double-pulse facilitation test, two identical gate pulses are applied consecutively. The peak currents caused by the first pulse and the second pulse are denoted as A1 and A2, respectively. Figure 5 As shown in (a), the dual-pulse facilitation index can be calculated as A2 / A1 × 100%. Test results show that the device exhibits a significant paired-pulse facilitation effect (A2 > A1). When the pulse interval gradually increases from 50 ms to 800 ms, the dual-pulse facilitation index gradually decreases, as shown in (a). Figure 5 As shown in (b), the residual ion effect generated by the previous stimulus gradually disappears over time. Fitting the decay curve yields two characteristic relaxation time constants, fast and slow, which are approximately 18 ms and 232 ms, respectively, confirming that the residual interfacial ion effect generated by the previous stimulus gradually dissipates over time. Example 3

[0028] This embodiment systematically studies the regulation of gate pulse frequency, amplitude, and quantity on the synaptic plasticity of a device, realizing the dynamic switching from short-term to long-term plasticity. The test results are as follows: Figure 6 As shown.

[0029] In frequency dependence tests, by Figure 6 (a) It can be seen that when the pulse frequency is increased from 10 Hz to 20 Hz and 100 Hz, the relaxation time between adjacent stimuli is shortened, the ion accumulation during continuous stimulation is more obvious, the residual response after stimulation is enhanced, and the device gradually changes from short-term plasticity to long-term plasticity.

[0030] In the amplitude dependency test, by Figure 6 (b) It can be seen that when the gate pulse voltages are -0.3 V, -0.6 V and -0.9 V, respectively, that is, when the absolute value of the pulse voltage increases from 0.3 V to 0.6 V and 0.9 V, the peak value of the device response and the residual response after stimulation are both enhanced.

[0031] In the pulse number dependence test, by Figure 6 (c) It can be seen that when the number of consecutive pulses increases from 1 to 25, 50 and 100, the channel conductance modulation degree and the memory retention after stimulation are gradually enhanced.

[0032] The above results indicate that by adjusting the pulse frequency, amplitude, and number, the effective number of ions entering the channel and their relaxation process can be continuously controlled, achieving an adjustable transition from short-term plasticity to long-term plasticity. Example 4

[0033] This embodiment further investigates the learning, memory, forgetting, and erasure behavior of the device under repetitive pulse training. The test results are as follows: Figure 7 As shown.

[0034] Device learning-forgetting characteristics such as Figure 7 As shown in (a), when 50 enhancement pulses are applied to the device continuously, the device's current response gradually increases with repeated stimulation; after stimulation stops, the device's current response gradually decays over time, forming the memory and forgetting process after learning. After applying the same training pulses again, the device response can be enhanced again, demonstrating repeatable learning behavior.

[0035] like Figure 7 As shown in (b), when a continuous enhancement pulse is applied, the device current response gradually increases with the number of pulses, forming a learning or synaptic weight enhancement stage; subsequently, when an erase pulse of opposite polarity is applied, the device current response gradually decreases, forming an erase or synaptic weight suppression stage.

[0036] During the learning and erasing process, the device response can be continuously adjusted between multiple intermediate states, indicating that the device can achieve reversible multi-level synaptic weight updates. Example 5

[0037] This embodiment further investigates the cyclic stability of the device under repeated learning and erasing operations. The test results are as follows: Figure 8 As shown.

[0038] In each cycle, enhancement pulses are applied continuously to gradually increase the device response with the number of pulses; then, erase pulses of opposite polarity are applied to gradually decrease the device response. The learning and erasing operations are repeated continuously for 10 cycles in the same manner.

[0039] Depend on Figure 8 As can be seen, the device maintains a clear and periodic enhancement and fall-off process in 10 consecutive cycles, indicating that the device has good learning-erase cycle stability and repeatable synaptic weight update capability.

[0040] In summary, this zwitterionic gel-based organic electrochemical synaptic device can stably achieve tunable short-term plasticity, long-term enhancement and inhibition, learning-forgetting, reversible multi-level synaptic weight updates, and stable cyclic read-write characteristics. It possesses rich biomimetic synaptic response behaviors and can be used as an artificial synaptic unit in the fields of neuromorphic computing and bioelectric signal processing.

[0041] Comparative Example 1 This embodiment provides a method for preparing a polyzwitterionic gel-based organic electrochemical synaptic device, which is basically the same as the steps in Example 1, except that the polyzwitterionic gel precursor solution is prepared as follows: 50 mg of 2-methacryloyloxyethyl phosphocholine, 50 mg of N,N-dimethylacrylamide (DMAA), 55 mg of polyethylene glycol diacrylate, 250 mg of EMIMTFSI, and 4 mg of photoinitiator Irgacure 184 are weighed and the MPC / DMAA copolymer gel electrolyte is prepared according to the same method as in Example 1.

[0042] Comparative Example 2 This embodiment provides a method for preparing a zwitterionic gel-based organic electrochemical synaptic device, which is basically the same as the steps in Example 1, except that the zwitterionic gel precursor solution is prepared as follows: 100 mg of N,N-dimethylacrylamide, 55 mg of polyethylene glycol diacrylate, 250 mg of EMIMTFSI and 4 mg of photoinitiator Irgacure 184 are weighed and DMAA gel electrolyte is prepared according to the same method as in Example 1.

[0043] Experimental Example 1 When continuous gate pulse stimulation was applied to the devices in Example 1 and Comparative Examples 1-2 equipped with gel electrolytes containing different monomer components, all three groups of devices exhibited a gradual accumulation of channel current. After the pulse stimulation ceased, the channel current was continuously monitored for 10 seconds, and the residual current levels of the three groups of samples were compared. The results are as follows: Figure 9 As shown, the residual current ratio of Example 1 using the MPC-based zwitterionic gel electrolyte reached 22.5%, significantly higher than that of Comparative Example 1 (10.8%) and Comparative Example 2 (2.3%). Compared to the two comparative example devices, Example 1 exhibited a slower current decay rate, maintaining a residual channel current well above the baseline level even 10 seconds after stimulation cessation. These comparative results confirm that the zwitterionic gel electrolyte incorporating MPC structural units can effectively delay the interfacial ion relaxation process, endowing the device with superior current retention capability and short-term synaptic memory characteristics.

[0044] The above are merely preferred embodiments of the present invention and are not intended to limit the present invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A zwitterionic gel-based organic chemical synaptic device, comprising a substrate layer, an electrode layer, and a channel layer, wherein the electrode layer comprises a source, a drain, and a gate, characterized in that, It also includes a zwitterionic gel dielectric layer, which is disposed above the channel layer and at least covers the channel layer, and connects the channel layer and the gate, thereby constructing an ion transport channel between the gate and the channel layer.

2. The zwitterionic gel-based organic chemical synaptic device according to claim 1, characterized in that, The dielectric layer of the zwitterionic gel is prepared by photo-initiated polymerization and crosslinking reaction of a zwitterionic gel precursor solution. The zwitterionic gel precursor solution includes the following raw materials in weight percentage: 15% to 35% zwitterionic monomer, 50% to 70% ionic liquid, 8% to 20% crosslinking agent and 0.3% to 2.0% photoinitiator.

3. The zwitterionic gel-based organic chemical synaptic device according to claim 1, characterized in that, Both the electrode layer and the channel layer are disposed above the substrate layer, with the source and drain electrodes respectively disposed on both sides of the channel layer, and the source and drain electrodes are respectively covered with an insulating layer.

4. The zwitterionic gel-based organic chemical synaptic device according to claim 1, characterized in that, The zwitterionic monomer is selected from at least one of [2-(methacryloyloxy)ethyl]dimethyl-(3-sulfopropyl)ammonium inner salt and 2-methacryloyloxyethyl phosphorylcholine; The ionic liquid is selected from at least one of 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imine salt, 1-ethyl-3-methylimidazolium dicyanamide salt, and 1-ethyl-3-methylimidazolium ethyl sulfate. The crosslinking agent is polyethylene glycol diacrylate; The photoinitiator is selected from at least one of 2-hydroxy-2-methyl-1-phenyl-1-propanone and 1-hydroxycyclohexylphenyl ketone.

5. The zwitterionic gel-based organic chemical synaptic device according to claim 1, characterized in that, The channel layer is made of poly[3,3′-bis[2-[2-(2-methoxyethoxy)ethoxy]ethoxy]-2,2′:5′,2″-terthiophene-5,5″-diyl] (P(g2T-T); The substrate layer is selected from any one of silicon wafers, glass substrates, or flexible polymer substrates; The gate electrode is any one of a silver / silver chloride electrode, a gold electrode, or a platinum electrode.

6. A method for preparing a polyzwitterionic gel-based organic chemical synaptic device, characterized in that, Includes the following steps: (1) Chromium thin film and gold thin film are sequentially prepared on the substrate surface with photoresist pattern to form an electrode layer including source and drain. (2) An insulating layer is prepared on the substrate surface of the supporting electrode layer, and the corresponding area of ​​the channel is treated. An organic semiconductor solution is coated on the surface of the channel area and annealed to form a channel layer. (3) The zwitterionic gel precursor solution is coated on the surface of a substrate containing an insulating layer, a channel layer and an electrode layer, and then crosslinked and cured by ultraviolet light to form a zwitterionic gel dielectric layer. (4) The gate and the polyzwitter gel dielectric layer are docked and assembled to finally obtain the polyzwitter gel-based organic chemical synaptic device.

7. The preparation method according to claim 6, characterized in that, The organic semiconductor solution was prepared by dissolving poly[3,3′-bis[2-[2-(2-methoxyethoxy)ethoxy]ethoxy]-2,2′:5′,2″-terthiophene-5,5″-diyl] in an organic solvent, with a solution concentration of 8 mg / mL.

8. The preparation method according to claim 7, characterized in that, The organic solvent is selected from at least one of chloroform, chlorobenzene, and o-dichlorobenzene.

9. The preparation method according to claim 6, characterized in that, The ultraviolet light has a wavelength of 365–405 nm, an irradiation power of 100–500 mW, and an irradiation time of 10–6000 s.

10. The application of a zwitterionic gel-based organic chemical synaptic device according to any one of claims 1-5 in neuromorphic computing and bioelectric signal processing.

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