A fast uv light response covalent organic framework photoelectric memristor based on indole azobenzene and preparation and application

CN123021885APending Publication Date: 2026-10-30EAST CHINA UNIV OF SCI & TECH
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Patent Information

Application Number
CN202610965326.0
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-06-30
Publication Date
2026-10-30

AI Technical Summary

Technical Problem

然而,有限的数据传输带宽限制了大量的电信号流,传感单元,计算单元与存储单元无法进行高效的协同工作

Benefits of technology

[0034]在本发明中使用含有Azo-MeIndole偶氮单体与1,3,5-Tris(4-aminophenyl)Benzene (TA)进行合成大面积的二维快速紫外光响应的共价有机框架COF-TAMI薄膜。具有紫外光响应的Azo-MeIndole基团在紫外光下发生毫秒级的快速顺式光异构化。其在光照撤去后也能快速发生热弛豫回到初始状态。其达到毫秒级的响应速度给COF-TAMI成为光电响应的突触器件提供了可能。对COF-TAMI器件进行一系列光电测试,包括在不同光强的脉冲以及不同宽度的脉冲,其在10ms的脉宽下,光脉冲电流稳态值从10%增加值90%所需的电流响应时间平均保持4.45 ms,其响应速度高于已经报导的偶氮苯光响应材料,能够进行毫秒级紫外光响应。 COF-TAMI光电突触器件为高速响应光电神经形态计算提供了一种全新的解决方案。

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Abstract

The present application belongs to the technical field of organic optoelectronic neuromorphic, and relates to a fast ultraviolet light response covalent organic framework optoelectronic memristor based on indole azobenzene and preparation and application. The optoelectronic memristor uses a large-area two-dimensional fast ultraviolet light response covalent organic framework COF-TAMI film synthesized by using Azo-MeIndole azo monomer and 1,3,5-Tris(4-aminophenyl)Benzene (TA). A series of photoelectric tests are carried out on the COF-TAMI device, including different light intensity pulses and different width pulses, and the average current response time required for the light pulse current steady-state value to increase from 10% to 90% is maintained at 4.45 ms under the pulse width of 10 ms, and the COF-TAMI optoelectronic synapse device provides a brand-new solution for high-speed response optoelectronic neuromorphic computing.
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Description

Technical Field

[0001] This invention belongs to the field of organic optoelectronic neuromorphic technology, and relates to a fast ultraviolet light-responsive covalent organic framework photomemristor based on indole azobenzene, its preparation and application. Technical Background

[0002] The era of artificial intelligence has created a tremendous demand for computing power. However, limited data transmission bandwidth restricts the flow of large amounts of electrical signals, preventing sensing, computing, and storage units from working efficiently together. Therefore, transferring simple, highly repetitive tasks to sensors has become a new trend. Opto-neural synapses are one such device capable of enabling in-sensor storage and computation.

[0003] Azobenzene is a classic photoisomerization functional unit. The trans-isomerized azo group can be efficiently converted to the metastable cis-isomer under ultraviolet to visible light, and the cis-isomer is the main component of the photostable state. This change can cause specific alterations in the electronic and geometric properties of the molecule. Furthermore, the cis-configured azo can return to the trans state under visible light or through thermal relaxation. In fact, the ideal thermal stability of the metastable cis-isomer can be significantly and controllably tuned through molecular design. Thermal stability can be adjusted to meet the requirements of specific applications. Applications such as molecular storage or logic devices require highly thermally stable azo switches, or real-time optical information transmission materials require rapidly relaxing azo groups. Therefore, to achieve rapid optical information transmission, researchers have shortened the thermal stability of azobenzene by introducing different substituents. For example, the 4,4' push-pull or azophenol system can enable extremely fast switching speeds for azo. Indole azo compounds are also noteworthy for their ability to undergo nanosecond-level photoisomerization. The N in indole is in an sp3 hybrid state, and its lone pair electrons are quite active, capable of intramolecular charge transfer during the photoisomerization of azo, thus facilitating the photoisomerization of the azo group.

[0004] Therefore, indole azo groups can be integrated into organic optoelectronic devices as materials to achieve rapid photoresponse. The linear structures of traditional organic polymers face significant challenges in planar integration, so we introduced indole azo groups into covalent organic framework materials for application in the field of organic semiconductors. These materials maintain a stable lattice structure at atomic-level thickness, allowing for three-dimensional stacking, significantly improving space utilization and design flexibility. This results in thin films with uniform electrical properties, making it easier to achieve large-area, high-performance fabrication. Summary of the Invention

[0005] The purpose of this invention is to provide a fast ultraviolet light-responsive covalent organic framework photomemristor based on indole azobenzene.

[0006] The second objective of this invention is to provide a method for fabricating a fast ultraviolet light-responsive covalent organic framework photomemristor based on indole azobenzene.

[0007] The third objective of this invention is to provide an application of a fast ultraviolet light-responsive covalent organic framework photomemristor based on indole azobenzene in high-speed response photoelectric neuromorphic computing.

[0008] The technical solution of the present invention:

[0009] A fast UV-responsive covalent organic framework (COF-TAMI) photomemristor based on indole-azobenzene has the following structural composition from bottom to top:

[0010] (1) Glass substrate;

[0011] (2) Indium tin oxide electrode (ITO);

[0012] (3) Photoelectric responsive indole azobenzene covalent organic framework (COF-TAMI) material thin film active layer;

[0013] (4) Aluminum electrode;

[0014] Furthermore, the thickness of the active layer of the indole azobenzene covalent organic framework (COF-TAMI) material film is 30nm-200nm.

[0015] Furthermore, the thickness of the indium tin oxide electrode is 100-200 nm.

[0016] Furthermore, the aluminum electrode has a thickness of 100-200 nm.

[0017] Furthermore, the aforementioned photoresistor with a fast ultraviolet light-responsive covalent organic framework (COF-TAMI) based on indole azobenzene has a photoresponse function: the Azo-MeIndole group with ultraviolet light response undergoes millisecond-level fast cis-photoisomerization under ultraviolet light, and the current response time required for the steady-state value of the light pulse current to increase from 10% to 90% is maintained on average at 4.45 ms with a pulse width of 10 ms.

[0018] The fast UV-responsive covalent organic framework (COF-TAMI) material structure based on indole azobenzene is as follows:

[0019]

[0020] The above structure is a unit cell, and the dashed lines represent the continued extension of this structure in two dimensions.

[0021] This invention also provides a method for fabricating the fast ultraviolet light-responsive covalent organic framework (COF-TAMI) photomemristor based on indole azobenzene, comprising the following steps:

[0022]

[0023] (1) Synthesis of (E)-3-((4-bromophenyl)diazeninyl)-2-methyl-1H-indole (M1);

[0024]

[0025] (2) Synthesis of (E)-2-methyl-3-((4-(4,4,5,5-tetramethyl-1,3,2-dioxaborphane-2-yl)phenyl)diazeninyl)-1H-indole (M2):

[0026]

[0027] (3) Synthesis of (E)-4'-((2-methyl-1H-indol-3-yl)diazeninyl)-[1,1'-biphenyl]-2,5-dicarboxaldehyde (M3);

[0028]

[0029] (4) Preparation of COF-TAMI film: 1,3,5-tris(4-aminophenyl)benzene (0.06 mmol) was dissolved in the upper layer of acetic acid, while (E)-4'-((2-methyl-1H-indol-3-yl)diazo)-[1,1'-biphenyl]-2,5-dicarboxaldehyde (0.09 mmol) was dissolved in the bottom layer of dichloromethane. Toluenesulfonic acid was added to the bottom layer solution. While keeping the liquid phase in the bottle stable, the upper layer liquid was gradually added. The density difference between the two solutions formed a clear liquid-liquid interface. At this interface, the two functional monomers underwent an imine condensation reaction and dehydration, and the COF-TAMI film was separated and transferred to an indium tin oxide (ITO) substrate and dried under vacuum.

[0030] Further, the specific synthesis steps of M1 in step (1) are as follows: 4-bromoaniline is dissolved in HBF4 and cooled to -15°C. Then, NaNO2 in water is added dropwise, the reaction mixture is stirred, and then the white precipitate is removed. After post-treatment, diazonium salt crystal powder is obtained. An appropriate amount of 2-methylindole is dissolved in DMF. Diazonium salt is added in small portions, the reaction mixture is stirred at room temperature, and after post-treatment, M1 is obtained.

[0031] Further, the specific synthesis steps of M2 in step (2) are as follows: (E)-3-((4-bromophenyl)diazeninyl)-2-methyl-1H-indole, bis(pinacol)diboron, [PdCl2(dppf)], potassium acetate and anhydrous 1,4-dioxane are added to a Schlenk tube; the mixture is degassed using liquid nitrogen through three freeze-thaw-evacuation-thawing cycles, and purged with nitrogen, heated and stirred. After the reaction is completed, M2 is obtained through post-treatment.

[0032] Further, the specific synthesis steps of M3 in step (3) are as follows: 2-bromo-terephthalaldehyde, (E)-2-methyl-3-((4-(4,4,5,5-tetramethyl-1,3,2-dioxaborhecyclopentan-2-yl)phenyl)diazeninyl)-1H-indole, Pd(PPh3)4, K2CO3, water and THF are added to a Schlenk tube; the mixture is degassed using liquid nitrogen through three freeze-thaw-evacuation-thawing cycles and purged with nitrogen; the mixture is heated and stirred in the dark; after the reaction is completed, M3 is obtained after post-treatment.

[0033] The present invention also provides an application of the fast ultraviolet light-responsive covalent organic framework (COF-TAMI) photomemristor based on indole azobenzene or the fast ultraviolet light-responsive covalent organic framework (COF-TAMI) photomemristor based on indole azobenzene prepared by the preparation method in high-speed response photoelectric neuromorphic computing.

[0034] This invention utilizes a covalent organic framework (COF-TAMI) film containing an azo monomer (Azo-MeIndole) and 1,3,5-Tris(4-aminophenyl)Benzene (TA) to synthesize a large-area, two-dimensional, fast UV-responsive COF-TAMI film. The UV-responsive Azo-MeIndole group undergoes millisecond-level rapid cis-photoisomerization under UV light. It also rapidly returns to its initial state after the light is removed through thermal relaxation. This millisecond-level response speed makes COF-TAMI a potential photoelectric synaptic device. A series of photoelectric tests were conducted on the COF-TAMI device, including pulses of different intensities and widths. At a pulse width of 10 ms, the average current response time required for the steady-state value of the photopulse current to increase from 10% to 90% remained at 4.45 ms. This response speed is higher than that of previously reported azobenzene photoresponsive materials, enabling millisecond-level UV response. The COF-TAMI photoelectric synaptic device provides a novel solution for high-speed, responsive photoelectric neuromorphic computing.

[0035] Beneficial effects: The average current response time required to increase the steady-state value of the photopulse current from 10% to 90% remains at 4.45 ms, which is higher than that of previously reported azobenzene photoresponsive materials, enabling millisecond-level ultraviolet light response. Attached Figure Description

[0036] Figure 1 This is a schematic diagram of the fabrication of a fast ultraviolet light-responsive covalent organic framework (COF-TAMI) photomemristor based on indole azobenzene;

[0037] Figure 2 Cross-sectional analysis of a fast UV-responsive covalent organic framework (COF-TAMI) thin film of indole-azobenzene, schematic diagram of field emission scanning electron microscopy (FESEM);

[0038] Figure 3 Schematic diagram of field emission scanning electron microscopy (FESEM) for surface analysis of indole-azobenzene rapid UV-responsive covalent organic framework (COF-TAMI) thin films;

[0039] Figure 4 PXRD characterization of indole azobenzene using a fast UV-responsive covalent organic framework (COF-TAMI);

[0040] Figure 5 40 mW cm -2 Schematic diagram of the current response of COF-TAMI device under illumination intensity;

[0041] Figure 6 rise time (t) 90 -t 10 The steady-state photocurrent (SFC) is defined as the time required for the steady-state photocurrent to increase from 10% to 90% under different illumination intensities. 100% illumination intensity is 80 mW / cm². -2 ;

[0042] Figure 7 The current response of the COF-TAMI device under different intensities of 365 nm ultraviolet light pulses is given; 100% light intensity corresponds to an illumination intensity of 80 mW / cm². -2 . Detailed Implementation

[0043] To make the objectives, technical solutions, and beneficial effects of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. Unless otherwise specified, all reagents, solvents, raw materials, etc., used are commercially available.

[0044] Example 1: A method for fabricating a fast ultraviolet light-responsive covalent organic framework (COF-TAMI) photomemristor based on indole azobenzene, comprising the following steps:

[0045] Flowchart of indole azo monomer synthesis:

[0046]

[0047] 1. Synthesis of (E)-3-((4-bromophenyl)diazeninyl)-2-methyl-1H-indole (M1)

[0048]

[0049] 4-Bromoaniline (3994 mg, 23.22 mmol) was dissolved in HBF4 (15 mL, 32% aqueous solution) and cooled to -15°C (NaCl / crushed ice). Then, NaNO2 (2222 mg, 23.22 mmol) was added dropwise to water (3 mL). The reaction mixture was stirred for 30 minutes, and the white precipitate was aspirated and washed with ice-cold Et2O (10 mL) and Et2O / MeOH (1:1, 5 mL). After washing, the mixture was vacuum-sealed for 15 minutes to dry 6.13 g (97.7%) of diazonium salt crystal powder, which could then be used directly for azo coupling reactions or stored in a refrigerator (-18°C, up to 10 days). An appropriate amount of 2-methylindole (1310 mg, 10 mmol) was dissolved in DMF (5 mL). The diazonium salt (1 equivalent) was added in small portions. The solution immediately turned red. The reaction mixture was stirred at room temperature for 16 hours and then poured into water (200 mL). The organic compounds typically form red droplets, which were collected by extracting the aqueous solution with DCM (3 × 100 mL). The combined organic phases were dried over Na₂SO₄, filtered, and the solvent was removed under vacuum. The crude product was purified by column chromatography to give 2.837 g (90.35%).

[0050] 1 H NMR (400 MHz, Chloroform-d) δ 8.53 – 8.46 (m, 1H), 7.79 – 7.72 (m,2H), 7.62 – 7.55 (m, 2H), 7.33 – 7.18 (m, 4H), 2.81 (s, 3H).

[0051] 2. Synthesis of (E)-2-methyl-3-((4-(4,4,5,5-tetramethyl-1,3,2-dioxaborphane-2-yl)phenyl)diazeninyl)-1H-indole (M2)

[0052]

[0053] Add (E)-3-((4-bromophenyl)diazeninyl)-2-methyl-1H-indole (1.0362 g, 3.3 mmol, 1.0 equivalent), bis(pinacol)diboron (0.922 g, 3.63 mmol, 1.1 equivalent), [PdCl2(dppf)] (0.07 g, 0.01 mmol, 0.03 equivalent), potassium acetate (0.97 g, 9.9 mmol, 3.0 equivalent), and anhydrous 1,4-dioxane (30 mL) to a 250 mL Schlenk tube. Degas the mixture using liquid nitrogen through three freeze-thaw-evacuation-thawing cycles and purge with nitrogen. After stirring at 90 °C for 24 hours, filter the reaction mixture through a diatomaceous earth mat and wash with dichloromethane. The solvent was removed under reduced pressure, and the black residue was purified by rapid column chromatography (silica; hexane / ethyl acetate) to give an orange solid (E)-2-methyl-3-((4-(4,4,5,5-tetramethyl-1,3,2-dioxaborhecyclopentan-2-yl)phenyl)diazeninyl)-1H-indole (1.132 g, 95%).

[0054] 1 H NMR (600 MHz, DMSO-d6) δ 12.09 (s, 1H), 8.36 (dd, J = 7.1, 1.9 Hz,1H), 7.80 (s, 4H), 7.42 – 7.37 (m, 1H), 7.20 (pd, J = 7.2, 1.5 Hz, 2H), 2.78(s, 3H), 1.32 (s, 12H).

[0055] 3. Synthesis of (E)-4'-((2-methyl-1H-indol-3-yl)diazeninyl)-[1,1'-biphenyl]-2,5-dicarboxaldehyde (M3)

[0056] To a 100 mL Schlenk tube, add 2-bromo-terephthalaldehyde (0.986 g, 4.63 mmol, 1.0 eq.), (E)-2-methyl-3-((4-(4,4,5,5-tetramethyl-1,3,2-dioxaborhecyclopentan-2-yl)phenyl)diazeninyl)-1H-indole (1.67 g, 4.63 mmol, 1 eq.), Pd(PPh3)4 (0.25 g, 0.23 mmol, 0.05 eq.), K2CO3 (3.83 g, 12.63 mmol, 6.0 eq.), water (5 mL), and THF (80 mL). Degas the mixture using liquid nitrogen through three freeze-thaw-evacuation-thawing cycles and purge with nitrogen. After stirring at 90 °C in the dark for 24 hours, cool the reaction mixture to room temperature and add brine (50 mL). The mixture was first extracted with THF (100 mL), then extracted twice with dichloromethane (100 mL × 2). The combined organic layers were dried over MgSO4, the solvent was removed under reduced pressure, and the black residue was purified by rapid column chromatography (SiO2; hexane / ethyl acetate) to give an orange solid (E)-4'-((2-methyl-1H-indol-3-yl)diazeninyl)-[1,1'-biphenyl]-2,5-dicarboxaldehyde (1.18 g, 70%).

[0057] 1 H NMR (400 MHz, DMSO-d6) δ 12.11 (s, 1H), 10.20 (s, 1H), 10.05 (s,1H), 8.43 – 8.36 (m, 1H), 8.17 – 8.04 (m, 3H), 8.00 – 7.93 (m, 2H), 7.70 –7.63 (m, 2H), 7.45 – 7.35 (m, 1H), 7.27 – 7.18 (m, 2H), 2.81 (s, 3H).

[0058] 4. Preparation of COF-TAMI thin films

[0059] 1,3,5-Tris(4-aminophenyl)benzene (0.06 mmol) was dissolved in the upper layer of 2 mol / L acetic acid (30 mL), while (E)-4'-((2-methyl-1H-indol-3-yl)diazo)-[1,1'-biphenyl]-2,5-dicarboxaldehyde (0.09 mmol) was dissolved in the lower layer of 30 mL dichloromethane. Additionally, p-toluenesulfonic acid (0.25 mmol) was added to the lower layer solution. While maintaining the liquid phase stability in the bottle, the upper layer was gradually added. The density difference between the two solutions formed a distinct liquid-liquid interface. At this interface, the two functional monomers underwent imine condensation and dehydration. After being kept undisturbed at room temperature for 1 day, the reaction continued. After 4 days of reaction, a yellow COF-TAMI film was obtained and transferred to an indium tin oxide (ITO) substrate. COF-TAMI on the ITO substrate was washed with 30 mL of DMF, water and ethanol to remove excess unpolymerized monomers, and then vacuum dried at 50 °C.

[0060] Finally, thermal evaporation was used to deposit the Al top electrode onto the active layer. The Al electrode thickness was 50-200 nm, resulting in the device Al / COF-TAMP / ITO.

[0061] Unlike traditional solvothermal reactions and homogeneous solution synthesis methods, COF-TAMI is prepared into thin films via a one-step liquid-liquid interfacial polymerization method at room temperature. For example... Figure 2 As shown, after a polymerization reaction at room temperature for 96 hours, the formed COF-TAMI film was transferred onto an ITO glass substrate. The thickness and surface morphology of the COF-TAMI film are crucial for its subsequent use as an active layer in electronic devices. Therefore, to ensure controllable preparation of our COF-TAMI film, we characterized the film growth results using scanning electron microscopy (SEM). By controlling the interfacial polymerization reaction time, we obtained a COF film with a thickness of approximately 28 nm. Figure 3 Furthermore, surface SEM characterization, such as... Figure 3 As shown, the film remains smooth and uniform at the 200 nm scale. This demonstrates that liquid-liquid interfacial polymerization can directly synthesize self-supporting COF-TAMI films.

[0062] like Figure 4 As shown, we characterized the crystal structure of COF-TAMI. Through PXRD analysis of COF-TAMI, we observed a significant peak at 2.97°, corresponding to the (100) crystal plane simulated by XRD. Based on the consistency of the above characterization, we can conclude that the COF-TAMI film synthesized by liquid-liquid interface polymerization is a two-dimensional crystalline framework material with an ordered structure and good crystallinity.

[0063] In neuroscience, synaptic activity is defined as the conversion of electrical activity generated by the presynaptic neuron into neurotransmitters, which then specifically contact specific receptors at the postsynaptic terminal, triggering changes in postsynaptic currents, i.e., excitatory postsynaptic currents (EPSCs). Similar to biological synapses, photoelectric synaptic devices utilize light signals as a front-end stimulus; the output current after the light pulse is considered the postsynaptic current. For example... Figure 5 As shown, a 365 nm light pulse with a 30% intensity and a pulse width of 10 ms was applied to the COF-TAMI device by applying a readout voltage of 0.1 V across the electrodes. It was observed that the device exhibited a rapid response upon illumination, showing a rapid increase in current. After the illumination stopped, the current initially decreased rapidly, then gradually returned to its initial level. We infer that this change in photocurrent is attributed to the rapid and reversible photoisomerization of the azo group in the COF-TAMI device due to the light pulse. The trans-to-cis conformational change of the azo group leads to an increase in device current. When the light pulse stops, the cis-azo group undergoes thermal isomerization from cis to trans, and the device current returns to its initial state. Unlike photodetectors, the device current gradually decreases rather than directly returning to its initial state after the light pulse is removed. This characteristic can be defined as exhibiting photosynaptic response performance.

[0064] Under pulsed light stimulation, the transient response speed of a device is typically evaluated using its response time. Specifically, the rise time (t...) Rise Photocurrent is defined as the time required for its steady-state value to increase from 10% to 90% (t). Rise =t 90 -t 10 This metric captures the combined effects of photogenerated carrier generation, separation, transport, and interface trapping / desorption during photoexcitation, while also considering the inherent RC delay of the device. 90 -t 10 Rise time is relatively insensitive to noise and initial transient fluctuations, exhibiting high repeatability and comparability. Therefore, it is widely used to evaluate the transient response of optoelectronic and neuromorphic photonic synaptic devices under different light intensities, pulse widths, and operating conditions, and serves as a key parameter for comparing the response speeds of different devices.

[0065] The required current response time tRise was extracted by applying 25 10-millisecond light pulses under five different light intensities, such as... Figure 6 As shown, under different light intensities, the average transient response speed remained between 3.66 and 5.01 milliseconds, indicating excellent rapid response capability to ultraviolet light. Furthermore, after the light pulse terminates, the current decay is determined by the half-life of the cis isomer of azobenzene.

[0066] By utilizing the synaptic response characteristics of COF-TAMI, and adjusting the duration, intensity, and interval of light pulses, the encoding ability of neural synapses for multidimensional differential information was simulated. These tests verified the processing capability of the neural synaptic device for different optical signals, enabling the device to generate richer output currents, thereby effectively enhancing information representation and processing capabilities. We fixed the read voltage applied to the device at 0.1 V. This is a relatively small and energy-efficient voltage value. Independent light pulses were applied to the COF-TAMI synaptic device, with light intensities ranging from 5% to 50%. 100% light intensity corresponds to an illumination intensity of 80 mW / cm². -2 ,like Figure 7 As shown. When the device is exposed to a light pulse with a light intensity of 5%, the device achieves 0.32 × 10⁻⁶. -6 The peak current of A is high, and after the light pulse ends, the current rapidly drops back to near the initial level, which is a typical characteristic of short-term synaptic enhancement. Meanwhile, when we apply a higher intensity light pulse to the device, the peak current also increases with increasing light intensity, from 0.32 × 10⁻⁶. -6 A increased to 2.98 × 10 -6 A indicates that the device current and the intensity of the optical pulse are positively correlated.

[0067] The technical solution of the present invention will be further described below with reference to the accompanying drawings. It should be understood that the following embodiments are for illustrative purposes only and are not intended to limit the scope of protection of the present invention. Equivalent substitutions or modifications made by those skilled in the art without departing from the concept of the present invention should all fall within the scope of protection of the present invention.

Claims

1. A fast ultraviolet light-responsive covalent organic framework (COF-TAMI) photomemristor based on indole-azobenzene, characterized in that: Its structure, from bottom to top, is as follows: (1) Glass substrate; (2) Indium tin oxide electrode (ITO); (3) Photoelectric responsive indole azobenzene covalent organic framework (COF-TAMI) material thin film active layer; (4) Aluminum electrode.

2. The fast ultraviolet light-responsive covalent organic framework (COF-TAMI) photomemristor based on indole-azobenzene according to claim 1, characterized in that, The structure of the photoelectro-responsive indole-azobenzene covalent organic framework (COF-TAMI) material is as follows: 。 3. The fast ultraviolet light-responsive covalent organic framework (COF-TAMI) photomemristor based on indole-azobenzene according to claim 1, characterized in that, The thickness of the active layer of the indole azobenzene covalent organic framework (COF-TAMI) material film is 30nm-200nm.

4. The fast ultraviolet light-responsive covalent organic framework (COF-TAMI) photomemristor based on indole-azobenzene according to claim 1, characterized in that, The thickness of the indium tin oxide electrode is 100-200 nm.

5. The fast ultraviolet light-responsive covalent organic framework (COF-TAMI) photomemristor based on indole-azobenzene according to claim 1, characterized in that, The aluminum electrode has a thickness of 100-200 nm.

6. The fast ultraviolet light-responsive covalent organic framework (COF-TAMI) photomemristor based on indole-azobenzene according to claim 1, characterized in that, The aforementioned photoresistor, which is based on an indole-azobenzene-based fast ultraviolet light-responsive covalent organic framework (COF-TAMI), has a photoresponse function: the Azo-MeIndole group with ultraviolet light response undergoes millisecond-level fast cis-photoisomerization under ultraviolet light, and the current response time required for the steady-state value of the photopulse current to increase from 10% to 90% is maintained on average at 4.45 ms with a pulse width of 10 ms.

7. A method for fabricating a fast ultraviolet light-responsive covalent organic framework (COF-TAMI) photomemristor based on indole-azobenzene as described in claim 1, characterized in that, Includes the following steps: (1) Synthesis of (E)-3-((4-bromophenyl)diazeninyl)-2-methyl-1H-indole (M1); (2) Synthesis of (E)-2-methyl-3-((4-(4,4,5,5-tetramethyl-1,3,2-dioxaborphane-2-yl)phenyl)diazeninyl)-1H-indole (M2): (3) Synthesis of (E)-4'-((2-methyl-1H-indol-3-yl)diazeninyl)-[1,1'-biphenyl]-2,5-dicarboxaldehyde (M3); (4) Preparation of COF-TAMI film: 1,3,5-tris(4-aminophenyl)benzene (0.06 mmol) was dissolved in the upper layer of acetic acid, while (E)-4'-((2-methyl-1H-indol-3-yl)diazo)-[1,1'-biphenyl]-2,5-dicarboxaldehyde (0.09 mmol) was dissolved in the bottom layer of dichloromethane. Toluenesulfonic acid was added to the bottom layer solution, and while keeping the liquid phase in the bottle stable, the upper layer liquid was gradually added; the density difference between the two solutions formed a clear liquid-liquid interface; At this interface, the two functional monomers undergo an imine condensation reaction and dehydration to obtain a COF-TAMI film, which is then transferred to an indium tin oxide (ITO) substrate and vacuum dried.

8. The method for fabricating a fast ultraviolet-responsive covalent organic framework (COF-TAMI) photomemristor based on indole azobenzene according to claim 7, characterized in that, The specific synthesis steps of M1 in step (1) are as follows: 4-Bromoaniline was dissolved in HBF4 and cooled to -15°C. Then, NaNO2 in water was added dropwise, the reaction mixture was stirred, and the white precipitate was removed. After post-treatment, diazonium salt crystalline powder was obtained. An appropriate amount of 2-methylindole was dissolved in DMF. The diazonium salt was added in small portions, and the reaction mixture was stirred at room temperature. After post-treatment, M1 was obtained.

9. The method for fabricating a fast ultraviolet light-responsive covalent organic framework (COF-TAMI) photomemristor based on indole azobenzene according to claim 6, characterized in that, The specific synthesis steps of M2 in step (2) are as follows: (E)-3-((4-bromophenyl)diazeninyl)-2-methyl-1H-indole, bis(pinacol)diboron, [PdCl2(dppf)], potassium acetate and anhydrous 1,4-dioxane are added to a Schlenk tube; the mixture is degassed using liquid nitrogen through a three-stage freeze-thaw cycle, purged with nitrogen, heated and stirred, and after the reaction is completed, M2 is obtained through post-treatment; the specific synthesis steps of M3 in step (3) are as follows: The synthesis steps were as follows: 2-bromo-terephthalaldehyde, (E)-2-methyl-3-((4-(4,4,5,5-tetramethyl-1,3,2-dioxaborhecyclopentan-2-yl)phenyl)diazeninyl)-1H-indole, Pd(PPh3)4, K2CO3, water, and THF were added to a Schlenk tube; the mixture was degassed using liquid nitrogen through three freeze-thaw cycles of evacuation and thawing, and purged with nitrogen; the mixture was heated and stirred in the dark; after the reaction was completed, M3 was obtained after post-treatment.

10. The application of a fast ultraviolet-responsive covalent organic framework (COF-TAMI) photomemristor based on any one of claims 1-6, or a fast ultraviolet-responsive covalent organic framework (COF-TAMI) photomemristor prepared by the preparation method of any one of claims 7-9, in high-speed response photoelectric neuromorphic computing.