Perovskite photovoltaic module and method of manufacturing the same

Abstract

The application belongs to the technical field of perovskite photovoltaic modules, and relates to a perovskite photovoltaic module and a preparation method thereof. The internal structure of the perovskite photovoltaic module comprises, from bottom to top, a substrate, a conductive layer, a first transport layer, a perovskite layer, a second transport layer, a protective layer and an electrode layer. A P1 cutting groove is arranged on the conductive layer, the P1 cutting groove is filled with a preparation material of the first transport layer, a P2 cutting groove is arranged on the protective layer, the P2 cutting groove is filled with a preparation material of the protective layer, the bottom of the P2 cutting groove is in communication with the first transport layer, the top of the P2 cutting groove is in communication with the protective layer, a P3 cutting groove is arranged in the P2 cutting groove, the bottom of the P3 cutting groove is in communication with the conductive layer, the top of the P3 cutting groove is in communication with the electrode layer, the P3 cutting groove is filled with a preparation material of the electrode layer, a P4 cutting groove is arranged on the surface of the electrode layer, and the bottom of the P4 cutting groove is exposed to the second transport layer. The application reduces damage to perovskite materials in the laser cutting process and improves the performance of the perovskite photovoltaic module.

Description

Technical Field

[0001] This invention belongs to the field of perovskite photovoltaic module technology, and specifically relates to a perovskite photovoltaic module and its preparation method. Background Technology

[0002] Due to the inherent instability of perovskite materials, perovskite photovoltaic modules face stringent manufacturing requirements during commercialization. Particularly when using laser etching to divide large-area devices into smaller sub-cells, traditional photovoltaic materials can withstand high-power lasers without damage, but perovskite materials are easily damaged or decomposed near the cutting line by high-power lasers, thus reducing the photoelectric performance of the perovskite photovoltaic module and even causing failure. Figure 2 As shown. Conversely, if the laser power is reduced to minimize damage, effective separation of the sub-cells may not be possible, preventing them from effectively interconnecting in subsequent processes, increasing internal resistance, and similarly impairing the performance of the perovskite photovoltaic module. Therefore, this invention proposes a novel method combining a protective layer and multiple laser cutting to ensure reliable separation and effective internal connection between sub-cells, while avoiding damage to the perovskite material caused by high-power lasers, thus solving this technical challenge. Summary of the Invention

[0003] The technical problem to be solved by the present invention is to provide a perovskite photovoltaic module and its preparation method. By adding a protective layer to the surface of the perovskite layer and using a multi-cutting method, the material damage of the perovskite during laser cutting is effectively reduced, the cutting accuracy and efficiency are improved, and the reliability of the internal connection between the sub-cells of the large-area perovskite photovoltaic module and the overall performance of the perovskite photovoltaic module are enhanced.

[0004] This invention is implemented as follows: a perovskite photovoltaic module is provided, the internal structure of which, from bottom to top, includes: a substrate, a conductive layer, a first transport layer, a perovskite layer, a second transport layer, and an electrode layer. A protective layer is disposed between the second transport layer and the electrode layer. A P1 dicing groove is disposed on the conductive layer to divide the conductive layer into multiple sub-cell regions. The P1 dicing groove is filled with the preparation material of the first transport layer. A P2 dicing groove is disposed on the protective layer, close to the location of the P1 dicing groove. The P2 dicing groove is filled with the preparation material of the protective layer. The bottom of the P2 dicing groove is connected to the first transport layer, and its top is connected to the protective layer. A P3 dicing groove is disposed within the P2 dicing groove, the bottom of the P3 dicing groove is connected to the conductive layer, and its top is connected to the electrode layer. The P3 dicing groove is filled with the preparation material of the electrode layer. A P4 dicing groove is disposed on the surface of the electrode layer, close to the location of the P2 dicing groove and far from the P1 dicing groove. The bottom of the P4 dicing groove exposes the second transport layer.

[0005] Furthermore, the thickness of the protective layer is 1nm to 5nm.

[0006] Furthermore, the protective layer is prepared using FTO or SnO2.

[0007] Furthermore, the conductive layer is prepared using TCO or FTO.

[0008] This invention is implemented as follows, and also provides a method for preparing a perovskite photovoltaic module as described above, comprising the following steps: Step 1: Prepare a conductive layer on the substrate, and cut the conductive layer with P1. The resulting P1 cut grooves divide the conductive layer into multiple sub-cell regions. Step 2: Prepare a first transport layer on the surface of the conductive layer, and fill the P1 cutting groove with the material used to prepare the first transport layer; Step 3: Sequentially prepare a perovskite layer and a second transport layer on the surface of the first transport layer. Perform P2 cutting on the second transport layer. The resulting P2 cutting groove sequentially cuts the second transport layer and the perovskite layer until the first transport layer is reached. The P2 cutting groove is close to the location of the P1 cutting groove. Step 4: Prepare a protective layer on the surface of the second transport layer, and fill the P2 cutting groove with the material used to prepare the protective layer; Step 5: Perform P3 cutting within the location of the P2 cutting groove. The resulting P3 cutting groove will sequentially cut off the material used to prepare the protective layer in the P2 cutting groove, and cut off the first transmission layer down to the conductive layer. The material used to prepare the protective layer in the P2 cutting groove will still be retained on the side of the P3 cutting groove. Step 6: Prepare an electrode layer on the surface of the protective layer, and fill the P3 cutting groove with the electrode layer preparation material; Step 7: Perform P4 cutting on the surface of the electrode layer. The resulting P4 cutting groove will cut through the electrode layer and the protective layer in sequence until the second transport layer. The P4 cutting groove is close to the location of the P2 cutting groove and far away from the P1 cutting groove, thus completing the fabrication of the perovskite photovoltaic module.

[0009] Compared with the prior art, the internal structure of the perovskite photovoltaic module of the present invention, from bottom to top, includes: a substrate, a conductive layer, a first transport layer, a perovskite layer, a second transport layer, a protective layer, and an electrode layer. A P1 dicing groove is provided on the conductive layer, and the P1 dicing groove is filled with the preparation material of the first transport layer. A P2 dicing groove is provided on the protective layer, and the P2 dicing groove is filled with the preparation material of the protective layer. The bottom of the P2 dicing groove is connected to the first transport layer, and its top is connected to the protective layer. A P3 dicing groove is provided in the P2 dicing groove, the bottom of the P3 dicing groove is connected to the conductive layer, and its top is connected to the electrode layer. The P3 dicing groove is filled with the preparation material of the electrode layer. A P4 dicing groove is provided on the surface of the electrode layer, and the bottom of the P4 dicing groove exposes the second transport layer. This invention effectively reduces damage to the perovskite material during laser cutting by adding a protective layer to the surface of the perovskite layer and using a multi-cutting method. This improves cutting precision and efficiency, enhances the reliability of internal sub-cell connections in large-area perovskite photovoltaic modules, and mitigates the problem of perovskite damage from high-power lasers, thereby improving the overall performance of perovskite photovoltaic modules. Attached Figure Description

[0010] Figure 1 This is a schematic diagram of the internal structure of a preferred embodiment of the perovskite photovoltaic module of the present invention; Figure 2 This is a schematic diagram of the internal structure of a perovskite photovoltaic module in the prior art. Detailed Implementation

[0011] To make the technical problems to be solved, the technical solutions, and the beneficial effects of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present invention and are not intended to limit the present invention.

[0012] Please refer to Figure 1 As shown, a preferred embodiment of the perovskite photovoltaic module of the present invention has an internal structure comprising, from bottom to top: a substrate 1, a conductive layer 2, a first transmission layer 3, a perovskite layer 4, a second transmission layer 5, a protective layer 6, and an electrode layer 7.

[0013] A P1 cutting groove 8 is provided on the conductive layer 2 to divide the conductive layer into multiple sub-cell areas A. The P1 cutting groove 8 is filled with the preparation material of the first transport layer 3 and connected to the first transport layer 3.

[0014] A P2 cutting groove 9 is formed on the protective layer 6, located near the P1 cutting groove 8. The P2 cutting groove 9 is filled with the material used to prepare the protective layer 6. The bottom of the P2 cutting groove 9 is connected to the first transport layer 3, and its top is connected to the protective layer 6. The P2 cutting groove 9 sequentially cuts through the second transport layer 5 and the perovskite layer 4 until it reaches the first transport layer 3.

[0015] A P3 cutting groove 10 is provided within the P2 cutting groove 9. The bottom of the P3 cutting groove 10 is connected to the conductive layer 2, and its top is connected to the electrode layer 7. The P3 cutting groove 10 is filled with the preparation material of the electrode layer 7. The P3 cutting groove 10 sequentially cuts the preparation material of the protective layer within the P2 cutting groove 9, and cuts the first transport layer 3 down to the conductive layer 2.

[0016] A P4 cutting groove 11 is formed on the surface of the electrode layer 7. The P4 cutting groove 11 is close to the location of the P2 cutting groove 9 and far away from the P1 cutting groove 8. The bottom of the P4 cutting groove 11 exposes the second transmission layer 5. The P4 cutting groove 11 cuts through both the electrode layer 7 and the protective layer 6 down to the second transmission layer 5.

[0017] The thickness of the protective layer 6 is 1 nm to 5 nm. The protective layer 6 is made of FTO or SnO2. The conductive layer 2 is made of TCO or FTO.

[0018] This invention also discloses a method for preparing a perovskite photovoltaic module as described above, comprising the following steps: Step 1: Prepare a conductive layer 2 on the substrate 1, and cut the conductive layer 2 with P1. The resulting P1 cutting groove 8 divides the conductive layer 2 into multiple sub-cell regions A.

[0019] Step 2: Prepare a first transport layer 3 on the surface of the conductive layer 2. The material used to prepare the first transport layer 3 fills the P1 cutting groove 8.

[0020] Step 3: Prepare a perovskite layer 4 and a second transport layer 5 sequentially on the surface of the first transport layer 3. Perform P2 cutting on the second transport layer 5. The resulting P2 cutting groove 9 will cut the second transport layer 5 and the perovskite layer 4 sequentially until the first transport layer 3 is reached. The P2 cutting groove 9 is close to the location of the P1 cutting groove 8.

[0021] Step 4: Prepare a protective layer 6 on the surface of the second transport layer 5. The material for preparing the protective layer 6 is filled into the P2 cutting groove 9.

[0022] Step 5: Perform P3 cutting within the location of P2 cutting groove 9. The resulting P3 cutting groove 10 sequentially cuts off the material used to prepare the protective layer inside P2 cutting groove 9, and cuts off the first transmission layer 3 down to the conductive layer 2. The material used to prepare the protective layer inside P2 cutting groove 9 is still retained on the side of P3 cutting groove 10.

[0023] Step 6: Prepare electrode layer 7 on the surface of protective layer 6. The material for preparing electrode layer 7 is filled into the P3 cutting groove 10.

[0024] Step 7: Perform P4 cutting on the surface of electrode layer 7. The resulting P4 cutting groove 11 will cut the electrode layer 7 and the protective layer 6 in sequence until the second transmission layer 5. The P4 cutting groove 11 is close to the location of P2 cutting groove 9 and far away from P1 cutting groove 8, thus completing the fabrication of the perovskite photovoltaic module.

[0025] The preparation method of the perovskite photovoltaic module of the present invention is further illustrated below through specific embodiments and comparative examples.

[0026] Example 1

[0027] The first embodiment of the method for preparing perovskite photovoltaic modules of the present invention includes the following steps: Step 11: First, the substrate 1 with FTO conductive layer 2 is P1 cut using a laser. The resulting P1 cut groove 8 divides the conductive layer 2 into multiple sub-cell regions A. The power of the laser equipment used is 90 watts.

[0028] Step 12: Then, a first transport layer 3 is prepared on the surface of the conductive layer 2. The material for preparing the first transport layer 3 is nickel oxide, and the nickel oxide material fills the P1 cutting groove 8.

[0029] Step 13: The perovskite component used is Cs. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 3. Based on the required elemental ratio, a certain proportion of CsI, FAI, MAI, PbI2, and BrI2 are dissolved in a mixed solution of DMF and DMSO to obtain a precursor solution with a concentration of 1.2 mol / L. Then, the precursor solution is coated onto the first transport layer 3 using a coating method. Subsequently, the substrate 1 coated with the perovskite active layer is heat-treated at 150°C for 10 min on a heating stage to obtain CsI. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 )3 Perovskite layer 4.

[0030] Step 14: Then, the second transport layer 5 is prepared on the surface of the perovskite layer 4 by thermal evaporation or coating. The materials for preparing the second transport layer 5 are PCBM and BCP.

[0031] Step 15: Then, a low-power laser is used to perform P2 cutting on the second transmission layer 5. The resulting P2 cutting groove 9 cuts the second transmission layer 5 and the perovskite layer 4 in sequence until the first transmission layer 3 is reached. The power of the laser equipment used is 10 watts.

[0032] Step 16: Then, a SnO2 protective layer 6 with a thickness of 1 nm is deposited on the second transport layer 5 by thermal evaporation. The material of the protective layer 6 is filled into the P2 cutting groove 9.

[0033] Step 17: Then, a laser is used to perform P3 cutting in the P2 cutting groove 9. The resulting P3 cutting groove 10 cuts the material of the protective layer 6 in the P2 cutting groove 9 in sequence, and cuts the first transmission layer 3 down to the conductive layer 2. The power of the laser equipment used this time is 50W.

[0034] Step 18: Then, a 200nm layer of silver is deposited on the surface of the protective layer 6 by thermal evaporation as the electrode layer 7. The material for preparing the electrode layer 7 is filled into the P3 cutting groove 10.

[0035] Step 19: Finally, P4 cutting is performed on the silver electrode layer 7 using a laser to complete the fabrication of the perovskite photovoltaic module.

[0036] Example 2

[0037] A second embodiment of the method for preparing perovskite photovoltaic modules of the present invention includes the following steps: Step 21: First, the substrate 1 with CTO conductive layer 2 is P1 cut using a laser. The resulting P1 cut groove 8 divides the conductive layer 2 into multiple sub-cell areas A. The power of the laser equipment used is 90 watts.

[0038] Step 22: Then, a first transport layer 3 is prepared on the surface of the conductive layer 2. The material for preparing the first transport layer 3 is nickel oxide, and the nickel oxide material fills the P1 cutting groove 8.

[0039] Step 23: The perovskite component used is Cs. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 3. Based on the required elemental ratio, a certain proportion of CsI, FAI, MAI, PbI2, and BrI2 are dissolved in a mixed solution of DMF and DMSO to obtain a precursor solution with a concentration of 1.2 mol / L. Then, the precursor solution is coated onto the first transport layer 3 using a coating method. Subsequently, the substrate coated with the perovskite active layer is heat-treated at 150°C for 10 min on a heating stage to obtain CsI. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 )3 Perovskite layer 4.

[0040] Step 24: Then, the second transport layer 5 is prepared on the surface of the perovskite layer 4 by thermal evaporation or coating. The materials for preparing the second transport layer 5 are PCBM and BCP.

[0041] Step 25: Then, a low-power laser is used to perform P2 cutting on the second transmission layer 5. The resulting P2 cutting groove 9 cuts the second transmission layer 5 and the perovskite layer 4 in sequence until the first transmission layer 3 is reached. The power of the laser equipment used is 10 watts.

[0042] Step 26: Then, FTO protective layer 6 with a thickness of 3nm is deposited on the second transport layer 5 by thermal evaporation. The material of protective layer 6 is filled into the P2 cutting groove.

[0043] Step 27: Then, a laser is used to perform P3 cutting in the P2 cutting groove 9. The resulting P3 cutting groove 10 cuts the material of the protective layer 6 in the P2 cutting groove 9 in sequence, and cuts the first transmission layer 3 down to the conductive layer 2. The power of the laser equipment used this time is 50W.

[0044] Step 28: Then, a 200nm layer of silver is deposited on the surface of the protective layer 6 by thermal evaporation as the electrode layer 7. The material for preparing the electrode layer 7 is filled into the P3 cutting groove 10.

[0045] Step 29: Finally, P4 cutting is performed on the silver electrode layer 7 using a laser to complete the fabrication of the perovskite photovoltaic module.

[0046] Example 3

[0047] A third embodiment of the method for preparing perovskite photovoltaic modules of the present invention includes the following steps: Step 31: First, the substrate 1 with FTO conductive layer 2 is P1 cut using a laser. The resulting P1 cut groove 8 divides the conductive layer 2 into multiple sub-cell regions A. The power of the laser equipment used is 90 watts.

[0048] Step 32: Then, a first transport layer 3 is prepared on the surface of the conductive layer 2. The material for preparing the first transport layer 3 is nickel oxide, and the nickel oxide material fills the P1 cutting groove 8.

[0049] Step 33: The perovskite component used is Cs. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.173. Based on the required elemental ratio, a certain proportion of CsI, FAI, MAI, PbI2, and BrI2 are dissolved in a mixed solution of DMF and DMSO to obtain a precursor solution with a concentration of 1.2 mol / L. Then, the precursor solution is coated onto the first transport layer 3 using a coating method. Subsequently, the substrate coated with the perovskite active layer is heat-treated at 150°C for 10 min on a heating stage to obtain CsI. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 )3 Perovskite layer 4.

[0050] Step 34: Then, the second transport layer 5 is prepared on the surface of the perovskite layer 4 by thermal evaporation or coating. The materials for preparing the second transport layer 5 are PCBM and BCP.

[0051] Step 35: Then, a low-power laser is used to perform P2 cutting on the second transmission layer 5. The resulting P2 cutting groove 9 cuts the second transmission layer 5 and the perovskite layer 4 in sequence until the first transmission layer 3 is reached. The power of the laser equipment used is 10 watts.

[0052] Step 36: Then, a SnO2 protective layer 6 with a thickness of 5 nm is deposited on the second transport layer 5 by thermal evaporation. The material of the protective layer 6 is filled into the P2 cutting groove.

[0053] Step 37: Then, a laser is used to perform P3 cutting in the P2 cutting groove 9. The resulting P3 cutting groove 10 cuts the material of the protective layer 6 in the P2 cutting groove 9 in sequence, and cuts the first transmission layer 3 down to the conductive layer 2. The power of the laser equipment used this time is 50W.

[0054] Step 38: Then, a 200nm layer of silver is deposited on the surface of the protective layer 6 by thermal evaporation as the electrode layer 7. The material for preparing the electrode layer 7 is filled into the P3 cutting groove 10.

[0055] Step 39: Finally, P4 cutting is performed on the silver electrode layer 7 using a laser to complete the fabrication of the perovskite photovoltaic module.

[0056] Comparative Example 1 Please refer to Figure 2 As shown, the first comparative example of the method for preparing perovskite photovoltaic modules of the present invention includes the following steps: Step D11: First, the substrate 1 with the FTO conductive layer 2 is cut by laser using P1. The resulting P1 cutting groove 8 divides the conductive layer 2 into multiple sub-cell areas A. The power of the laser equipment used is 90 watts.

[0057] Step D12: Then, a first transport layer 3 is prepared on the surface of the conductive layer 2. The material for preparing the first transport layer 3 is nickel oxide, and the nickel oxide material fills the P1 cutting groove 8.

[0058] Step D13: The perovskite component used is Cs. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 3. Based on the required elemental ratio, a certain proportion of CsI, FAI, MAI, PbI2, and BrI2 are dissolved in a mixed solution of DMF and DMSO to obtain a precursor solution with a concentration of 1.2 mol / L. Then, the precursor solution is coated onto the first transport layer 3 using a coating method. Subsequently, the substrate 1 coated with the perovskite active layer is heat-treated at 150°C for 10 min on a heating stage to obtain CsI. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 )3 Perovskite layer 4.

[0059] Step D14: Then, the second transport layer 5 is prepared on the surface of the perovskite layer 4 by thermal evaporation or coating. The materials for preparing the second transport layer 5 are PCBM and BCP.

[0060] Step D15: Then, a low-power laser is used to perform P2 cutting on the second transmission layer 5. The resulting P2 cutting groove 9 cuts the second transmission layer 5 and the perovskite layer 4 in sequence until the first transmission layer 3 is reached. The power of the laser equipment used is 10 watts.

[0061] Step D16: Then, a 200nm layer of silver is deposited on the surface of the second transport layer 5 as an electrode layer 7 by thermal evaporation.

[0062] Step D17: Finally, P4 cutting is performed on the silver electrode layer 7 using a laser to complete the fabrication of the perovskite photovoltaic module.

[0063] Comparative Example 2 The second comparative example of the method for preparing perovskite photovoltaic modules of the present invention includes the following steps: Step D21: First, the substrate 1 with the FTO conductive layer 2 is cut by laser using P1. The resulting P1 cutting groove 8 divides the conductive layer 2 into multiple sub-cell areas A. The power of the laser equipment used is 90 watts.

[0064] Step D22: Then, a first transport layer 3 is prepared on the surface of the conductive layer 2. The material for preparing the first transport layer 3 is nickel oxide, and the nickel oxide material fills the P1 cutting groove 8.

[0065] Step D23: The perovskite component used is Cs. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 3. Based on the required elemental ratio, a certain proportion of CsI, FAI, MAI, PbI2, and BrI2 are dissolved in a mixed solution of DMF and DMSO to obtain a precursor solution with a concentration of 1.2 mol / L. Then, the precursor solution is coated onto the first transport layer 3 using a coating method. Subsequently, the substrate 1 coated with the perovskite active layer is heat-treated at 150°C for 10 min on a heating stage to obtain CsI. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 )3 Perovskite layer 4.

[0066] Step D24: Then, the second transport layer 5 is prepared on the surface of the perovskite layer 4 by thermal evaporation or coating. The materials for preparing the second transport layer 5 are PCBM and BCP.

[0067] Step D25: Then, a low-power laser is used to perform P2 cutting on the second transmission layer 5. The resulting P2 cutting groove 9 sequentially cuts the second transmission layer 5, the perovskite layer 4, and the first transmission layer 3 until the conductive layer 2. The power of the laser equipment used is 50 watts.

[0068] Step D26: Then, a 200nm layer of silver is deposited on the surface of the second transport layer 5 as an electrode layer 7 by thermal evaporation.

[0069] Step D27: Finally, P4 cutting is performed on the silver electrode layer 7 using a laser to complete the fabrication of the perovskite photovoltaic module.

[0070] The perovskite photovoltaic modules prepared in Examples 1-3 and Comparative Examples 1 and 2 were subjected to performance tests, and the results are shown in Table 1.

[0071] Table 1. Performance comparison of perovskite photovoltaic modules prepared in Examples 1-3 and Comparative Examples 1 and 2

[0072] Table 1 shows that the improved perovskite photovoltaic module manufacturing process of this invention significantly enhances the performance of the perovskite photovoltaic module and avoids the problem of incomplete separation of sub-cells during low-power cutting. It also avoids the damage to the perovskite material caused by high-power cutting.

[0073] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A perovskite photovoltaic module, the internal structure of which, from bottom to top, comprises: The invention comprises a substrate, a conductive layer, a first transport layer, a perovskite layer, a second transport layer, and an electrode layer, characterized in that a protective layer is disposed between the second transport layer and the electrode layer; a P1 dicing groove is disposed on the conductive layer to divide the conductive layer into multiple sub-cell regions; the P1 dicing groove is filled with the preparation material of the first transport layer; a P2 dicing groove is disposed on the protective layer, the P2 dicing groove being close to the P1 dicing groove; the P2 dicing groove is filled with the preparation material of the protective layer; the bottom of the P2 dicing groove is connected to the first transport layer, and its top is connected to the protective layer; a P3 dicing groove is disposed within the P2 dicing groove; the P3 dicing groove is filled with the preparation material of the electrode layer; the bottom of the P3 dicing groove is connected to the conductive layer, and its top is connected to the electrode layer; and a P4 dicing groove is disposed on the surface of the electrode layer, the P4 dicing groove being close to the P2 dicing groove and far from the P1 dicing groove; the bottom of the P4 dicing groove exposes the second transport layer.

2. The perovskite photovoltaic module as described in claim 1, characterized in that, The thickness of the protective layer is 1nm to 5nm.

3. The perovskite photovoltaic module as described in claim 1, characterized in that, The protective layer is prepared using FTO or SnO2.

4. The perovskite photovoltaic module as described in claim 1, characterized in that, The conductive layer is made of TCO or FTO.

5. The method for preparing a perovskite photovoltaic module according to any one of claims 1 to 4, characterized in that, Includes the following steps: Step 1: Prepare a conductive layer on the substrate, and cut the conductive layer with P1. The resulting P1 cut grooves divide the conductive layer into multiple sub-cell regions. Step 2: Prepare a first transport layer on the surface of the conductive layer, and fill the P1 cutting groove with the material used to prepare the first transport layer; Step 3: Sequentially prepare a perovskite layer and a second transport layer on the surface of the first transport layer. Perform P2 cutting on the second transport layer. The resulting P2 cutting groove sequentially cuts the second transport layer and the perovskite layer until the first transport layer is reached. The P2 cutting groove is close to the location of the P1 cutting groove. Step 4: Prepare a protective layer on the surface of the second transport layer, and fill the P2 cutting groove with the material used to prepare the protective layer; Step 5: Perform P3 cutting within the location of the P2 cutting groove. The resulting P3 cutting groove will sequentially cut off the material used to prepare the protective layer in the P2 cutting groove, and cut off the first transmission layer down to the conductive layer. The material used to prepare the protective layer in the P2 cutting groove will still be retained on the side of the P3 cutting groove. Step 6: Prepare an electrode layer on the surface of the protective layer, and fill the P3 cutting groove with the electrode layer preparation material; Step 7: Perform P4 cutting on the surface of the electrode layer. The resulting P4 cutting groove will cut through the electrode layer and the protective layer in sequence until the second transport layer. The P4 cutting groove is close to the location of the P2 cutting groove and far away from the P1 cutting groove, thus completing the fabrication of the perovskite photovoltaic module.

6. The method for preparing a perovskite photovoltaic module as described in claim 5, characterized in that, Includes the following steps: Step 11: First, the substrate with the FTO conductive layer is P1 cut using a laser. The resulting P1 cut grooves divide the conductive layer into multiple sub-cell areas. The power of the laser equipment used is 90 watts. Step 12: Then, a first transport layer is prepared on the surface of the conductive layer. The material for preparing the first transport layer is nickel oxide, and the nickel oxide material fills the P1 cutting groove. Step 13: The perovskite component used is Cs. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 3. Based on the required elemental ratio, a certain proportion of CsI, FAI, MAI, PbI2, and BrI2 were dissolved in a mixed solution of DMF and DMSO to obtain a precursor solution with a concentration of 1.2 mol / L. Then, the precursor solution was coated onto the first transport layer using a coating method. Subsequently, the substrate coated with the perovskite active layer was heat-treated at 150°C for 10 min on a heating stage to obtain CsI. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 )3 Perovskite layer; Step 14: Then, the second transport layer is prepared on the surface of the perovskite layer by thermal evaporation or coating. The materials for preparing the second transport layer are PCBM and BCP. Step 15: Then, a low-power laser is used to perform P2 cutting on the second transmission layer. The resulting P2 cutting grooves will cut through the second transmission layer and the perovskite layer in sequence until the first transmission layer is reached. The power of the laser equipment used is 10 watts. Step 16: Then, a SnO2 protective layer with a thickness of 1 nm is deposited on the second transport layer by thermal evaporation. The material for the protective layer is filled into the P2 dicing groove. Step 17: Then, a laser is used to perform P3 cutting in the P2 cutting groove. The resulting P3 cutting groove will cut the material of the protective layer in the P2 cutting groove in sequence, and cut the first transmission layer down to the conductive layer. The power of the laser equipment used this time is 50W. Step 18: Then, a 200nm layer of silver is deposited on the surface of the protective layer by thermal evaporation as an electrode layer. The electrode layer material is then filled into the P3 cutting groove. Step 19: Finally, P4 cutting is performed on the silver electrode layer using a laser to complete the fabrication of the perovskite photovoltaic module.

7. The method for preparing a perovskite photovoltaic module as described in claim 5, characterized in that, Includes the following steps: Step 21: First, the substrate with the CTO conductive layer is P1 cut using a laser. The resulting P1 cut grooves divide the conductive layer into multiple sub-cell areas. The power of the laser equipment used is 90 watts. Step 22: Then, a first transport layer is prepared on the surface of the conductive layer. The material for preparing the first transport layer is nickel oxide, and the nickel oxide material fills the P1 cutting groove. Step 23: The perovskite component used is Cs. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 3. Based on the required elemental ratio, a certain proportion of CsI, FAI, MAI, PbI2, and BrI2 were dissolved in a mixed solution of DMF and DMSO to obtain a precursor solution with a concentration of 1.2 mol / L. Then, the precursor solution was coated onto the first transport layer using a coating method. Subsequently, the substrate coated with the perovskite active layer was heat-treated at 150°C for 10 min on a heating stage to obtain CsI. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 )3 Perovskite layer; Step 24: Then, the second transport layer is prepared on the surface of the perovskite layer by thermal evaporation or coating. The materials for preparing the second transport layer are PCBM and BCP. Step 25: Then, a low-power laser is used to perform P2 cutting on the second transmission layer. The resulting P2 cutting grooves will cut through the second transmission layer and the perovskite layer in sequence until the first transmission layer is reached. The power of the laser equipment used is 10 watts. Step 26: Then, an FTO protective layer with a thickness of 3 nm is deposited on the second transport layer by thermal evaporation. The material used to prepare the protective layer is filled into the P2 dicing groove. Step 27: Then, a laser is used to perform P3 cutting in the P2 cutting groove. The resulting P3 cutting groove will cut the material of the protective layer in the P2 cutting groove in sequence, and cut the first transmission layer down to the conductive layer. The power of the laser equipment used this time is 50W. Step 28: Then, a 200nm layer of silver is deposited on the surface of the protective layer by thermal evaporation as an electrode layer. The electrode layer material is then filled into the P3 cutting groove. Step 29: Finally, P4 cutting is performed on the silver electrode layer using a laser to complete the fabrication of the perovskite photovoltaic module.

8. The method for preparing a perovskite photovoltaic module as described in claim 5, characterized in that, Includes the following steps: Step 31: First, the substrate with the FTO conductive layer is P1 cut using a laser. The resulting P1 cut grooves divide the conductive layer into multiple sub-cell areas. The power of the laser equipment used is 90 watts. Step 32: Then, a first transport layer is prepared on the surface of the conductive layer. The material for preparing the first transport layer is nickel oxide, and the nickel oxide material fills the P1 cutting groove. Step 33: The perovskite component used is Cs. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 3. Based on the required elemental ratio, a certain proportion of CsI, FAI, MAI, PbI2, and BrI2 were dissolved in a mixed solution of DMF and DMSO to obtain a precursor solution with a concentration of 1.2 mol / L. Then, the precursor solution was coated onto the first transport layer using a coating method. Subsequently, the substrate coated with the perovskite active layer was heat-treated at 150°C for 10 min on a heating stage to obtain CsI. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 )3 Perovskite layer; Step 34: Then, the second transport layer is prepared on the surface of the perovskite layer by thermal evaporation or coating. The materials for preparing the second transport layer are PCBM and BCP. Step 35: Then, a low-power laser is used to perform P2 cutting on the second transmission layer. The resulting P2 cutting grooves will cut through the second transmission layer and the perovskite layer in sequence until the first transmission layer is reached. The power of the laser equipment used is 10 watts. Step 36: Then, a SnO2 protective layer with a thickness of 5 nm is deposited on the second transport layer by thermal evaporation. The material for the protective layer is filled into the P2 dicing groove. Step 37: Then, a laser is used to perform P3 cutting in the P2 cutting groove. The resulting P3 cutting groove will cut the material of the protective layer in the P2 cutting groove in sequence, and cut the first transmission layer down to the conductive layer. The power of the laser equipment used this time is 50W. Step 38: Then, a 200nm layer of silver is deposited on the surface of the protective layer by thermal evaporation as an electrode layer. The electrode layer material is then filled into the P3 cutting groove. Step 39: Finally, P4 cutting is performed on the silver electrode layer using a laser to complete the fabrication of the perovskite photovoltaic module.

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