A photon counting detector based on two-dimensional perovskite crystals and an x-ray device

CN123021900APending Publication Date: 2026-10-30WUHAN UNITED IMAGING LIFE SCIENCE INSTRUMENT CO LTD
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Patent Information

Application Number
CN202510571225.0
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-04-30
Publication Date
2026-10-30

AI Technical Summary

Technical Problem

提升高压可以加速电荷收集,减少电荷扩散的时间,但会导致漏电流增加,降低信噪比;降低晶体厚度可以减少电荷在晶体中的扩散距离,但会导致高能光子的吸收效率不足,降低探测效率

Benefits of technology

[0022]本申请的一些实施例中,利用二维钙钛矿晶体结构中不同晶面上的电荷迁移率的巨大差异,在面内进行有效的电荷输运,层间形成电荷共享的天然屏障,有效抑制了PCD中的电荷共享效应,从而实现更小的像素尺寸,提高成像的空间分辨率。

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Abstract

The application is suitable for the technical field of photon counting detector, and provides a photon counting detector based on two-dimensional perovskite crystal and an X-ray equipment.The photon counting detector comprises: a plurality of two-dimensional peroviskite crystal modules, each of which comprises at least one crystal unit, and the crystal unit has an interlayer direction; a planar electrode arranged at one end of the crystal unit; and a pixel electrode arranged at the other end of the crystal unit opposite to the planar electrode; the pixel electrode comprises a plurality of pixel units, each of which has a narrow side and a long side, and the extension direction of the narrow side of the pixel unit is consistent with the interlayer direction.The photon counting detector based on two-dimensional peroviskite crystal of the application has the interlayer direction of the two-dimensional peroviskite crystal consistent with the direction of the narrow side of the corresponding small pixel, so that the imaging resolution in the corresponding direction is improved.
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Description

Technical Field

[0001] This application belongs to the field of photon counting detector technology, and particularly relates to a photon counting detector and X-ray device based on a two-dimensional perovskite crystal. Background Technology

[0002] With the continuous development of X-ray imaging technology, X-ray imaging equipment has been widely used in medical diagnosis, industrial non-destructive testing, and other fields. As the core component of X-ray imaging equipment, the performance of the detector directly affects the image quality. In recent years, photon counting detectors (PCDs) have become a research hotspot due to their advantages such as providing energy resolution information, reducing radiation dose, and improving contrast.

[0003] However, when the charge cloud generated by X-ray photons in the detector spreads to adjacent pixels, a single photon is recorded by multiple pixels simultaneously, causing spectral distortion and a decrease in spatial resolution. Existing photon counting detectors still face the challenge of charge-sharing effects, which severely limits further reduction in pixel size, thereby limiting the spatial resolution of imaging.

[0004] Currently, methods to improve the charge-sharing effect mainly include increasing the voltage or reducing the crystal thickness. Increasing the voltage can accelerate charge collection and reduce charge diffusion time, but it leads to increased leakage current and a lower signal-to-noise ratio. Reducing the crystal thickness can reduce the diffusion distance of charge in the crystal, but it results in insufficient absorption efficiency of high-energy photons and a decrease in detection efficiency. In addition, some studies have used anti-charge-sharing logic circuits to suppress the charge-sharing effect, but this method increases the detector's dead time, reduces the maximum received photon flux, and cannot completely eliminate the charge-sharing effect. For traditional three-dimensional perovskite crystals, due to their isotropic charge transport characteristics, the diffusion rate of charge is similar in all directions, making it difficult to effectively control the diffusion direction of charge, resulting in a significant charge-sharing effect. Summary of the Invention

[0005] Based on this, this application provides a photon counting detector and X-ray device based on a two-dimensional perovskite crystal, wherein the interlayer direction of the two-dimensional perovskite crystal is consistent with the narrow side direction of the corresponding small pixel, thereby improving the imaging resolution in the corresponding direction.

[0006] In some embodiments, a photon counting detector based on a two-dimensional perovskite crystal is provided, the photon counting detector comprising:

[0007] Multiple two-dimensional perovskite crystal modules, each of the two-dimensional perovskite crystal modules including at least one crystal unit, the crystal unit having an interlayer orientation and an in-plane orientation;

[0008] A planar electrode is disposed at one end of the crystal unit;

[0009] A pixel electrode is disposed at the other end of the crystal unit opposite to the planar electrode.

[0010] The pixel electrode includes multiple pixel units, each pixel unit having a narrow side and a long side, the extension direction of the narrow side of the pixel unit being consistent with the interlayer direction.

[0011] In some embodiments, the extension direction of the long side of the pixel unit is parallel to the in-plane direction of the crystal unit, and the interlayer direction is perpendicular to the crystal unit's surface.

[0012] In some embodiments, the length ratio K of the narrow side to the long side of the pixel unit ranges from 0.002. <K<1。

[0013] In some embodiments, the thickness of each crystal unit along the interlayer direction is 0.01mm-100mm, and the narrow side length of each pixel unit is 0.005mm-1mm.

[0014] In some embodiments, multiple pixel units corresponding to each pixel electrode are arranged in an array along a first direction and a second direction, wherein the first direction is consistent with the interlayer direction and the second direction is consistent with the in-plane direction parallel to the layer of the crystal unit.

[0015] In some embodiments, the general structural formula of the two-dimensional perovskite material of the two-dimensional perovskite crystal module is L2An-1BnX3n+1;

[0016] Where n≥1, L is a long-chain amine ion, A is a cation, B is a metal ion, and X is a halide ion.

[0017] In some embodiments, the planar electrode is a cathode and the pixel electrode is an anode;

[0018] The planar electrode is a full-surface metal cathode covering one end of the crystal unit.

[0019] In some embodiments, an X-ray apparatus is provided, including a photon counting detector as described in any of the preceding embodiments.

[0020] In some embodiments, each two-dimensional perovskite crystal module includes multiple crystal units, and the multiple crystal units in the multiple two-dimensional perovskite crystal modules are arranged in an array along a first direction and a second direction. The first direction is consistent with the interlayer direction, and the second direction is consistent with the in-plane direction parallel to the layer of the crystal unit.

[0021] In some embodiments, X-ray equipment includes CT equipment, DR equipment, industrial non-destructive testing equipment, particle detection equipment, or security inspection equipment.

[0022] In some embodiments of this application, the significant differences in charge mobility on different crystal planes in a two-dimensional perovskite crystal structure are utilized to enable effective charge transport within the plane, forming a natural barrier for charge sharing between layers. This effectively suppresses the charge sharing effect in PCD, thereby achieving smaller pixel sizes and improving the spatial resolution of imaging.

[0023] In some embodiments of this application, by designing the interlayer direction of the two-dimensional perovskite to be consistent with the narrow edge direction of the corresponding small pixel, the direction of pixelation can be flexibly selected according to actual application requirements. When the interlayer structure of the two-dimensional perovskite crystal is designed in the X direction and the in-plane structure is in the YZ plane, pixelation in the X direction can be achieved; when the interlayer structure of the two-dimensional perovskite crystal is designed in the Z direction and the in-plane structure is in the XY plane, pixelation in the Z direction can be achieved.

[0024] Compared with the prior art, some embodiments of this application avoid the problems of increased leakage current caused by increasing high voltage or insufficient high-energy photon absorption efficiency caused by reducing crystal thickness. At the same time, it does not rely on logic circuits that resist charge sharing, and does not increase the dead time of the detector or reduce the maximum received photon flux, thereby improving spatial resolution while maintaining high-efficiency detection performance. Attached Figure Description

[0025] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0026] Figure 1 This is a schematic diagram of the structure of the X-ray device in some embodiments of this application;

[0027] Figure 2 This is a schematic diagram of the structure of a photon counting detector module based on a two-dimensional perovskite crystal in some embodiments of this application;

[0028] Figure 3 This is a schematic diagram of the pixel electrode structure in some embodiments of this application;

[0029] Figure 4 This is a schematic diagram of the structure of the pixel electrode in some other embodiments of this application. Detailed Implementation

[0030] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0031] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0032] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0033] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0034] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0035] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.

[0036] See Figure 1 , Figure 1 A schematic diagram of the structure of an X-ray device according to some embodiments of this application is shown. The X-ray device provided in some embodiments of this application includes an X-ray tube 1 and a detector module 2. In some embodiments, the detector module 2 is a photon counting detector module based on a two-dimensional perovskite crystal. The photon counting detector module includes at least one two-dimensional perovskite crystal unit. The photon counting detector module is essentially a two-dimensional perovskite crystal module. Each detector module has a planar electrode and a pixel electrode at both ends. The detector module 2 may include multiple two-dimensional perovskite crystal units. Each two-dimensional perovskite crystal unit has a planar electrode and a pixel electrode at both ends.

[0037] See Figure 2 , Figure 2 The diagram illustrates a schematic of a photon counting detector module based on a two-dimensional perovskite crystal according to some embodiments of this application. Each two-dimensional perovskite crystal module includes at least one crystal unit 201, which has an interlayer orientation and an in-plane orientation. The two-dimensional perovskite crystal has a unique layered structure in which inorganic and organic layers are alternately arranged. The interlayer orientation refers to the orientation perpendicular to the crystal unit plane (…). Figure 2 The in-plane direction (YZ plane) refers to the direction parallel to the crystal unit layer. The in-plane direction of the detector module, formed by the direction of the long side L of the pixel unit and the direction of the crystal unit depth H, constitutes the in-plane direction of the crystal unit. This unique crystal structure gives two-dimensional perovskite crystals excellent performance in photoelectric detection. In some embodiments, the interlayer direction of the two-dimensional perovskite crystal is perpendicular to the X-ray incident direction.

[0038] A planar electrode 202 is disposed at one end of the crystal unit for collecting charge. The planar electrode can be made of a metallic material, such as gold, silver, copper, aluminum, or other metals with good electrical conductivity. The planar electrode covers the entire surface of one end of the crystal unit, forming a complete electrode layer to ensure effective charge collection.

[0039] Figure 3 A schematic diagram of the pixel electrode structure is shown in some embodiments of this application. (Reference) Figure 2 and Figure 3 The pixel electrode 203 is disposed at the opposite end of the two-dimensional perovskite crystal module to the planar electrode. The pixel electrode includes multiple pixel units 2031, each pixel unit having a narrow side 2032 and a long side 2033. The extension direction of the narrow side of the pixel unit is consistent with the interlayer direction. In embodiments of this application, reducing the size of the pixel units in the interlayer direction helps to improve the spatial resolution of the photon counting detector. In embodiments of this application, the length of the narrow side 2032 is less than the length of the long side 2033. In some embodiments, the extension direction of the narrow side of the pixel unit is consistent with the interlayer direction; this can be that the arrangement direction of the narrow sides of multiple pixel units is the same as the interlayer direction, or that the extension direction of the narrow side of each pixel unit is the same as the interlayer direction.

[0040] In some embodiments of this application, asymmetric pixel units are designed in the interlayer and in-plane directions of the two-dimensional perovskite crystal. For example, the pixel unit has a narrow side and a long side. Utilizing the anisotropy of carrier transport properties on different crystal planes in the two-dimensional perovskite crystal, a natural barrier to charge diffusion can be formed due to the poor interlayer electrical properties, thereby weakening the charge sharing effect in PCD and achieving improved imaging resolution with smaller pixels. Depending on the actual application requirements of the small pixel direction (i.e., the X or Z direction), the interlayer direction of the two-dimensional perovskite crystal can be designed to coincide with the narrow side direction of the corresponding pixel unit, thereby improving the imaging resolution of the detector in the corresponding direction in X-ray, such as CT scans. Furthermore, combined with ultra-thin chip integrated circuit technology, even smaller pixel sizes can be achieved.

[0041] In some embodiments, the long side of the pixel unit extends parallel to the layer of the crystal unit, and the interlayer direction is perpendicular to the layer of the crystal unit. In the embodiments of this application, the long side of the pixel unit extends parallel to the layer of the crystal unit, the narrow side of the pixel unit extends in the same direction as the interlayer direction, and the long side of the pixel unit extends in the same direction as the in-plane direction. This allows the pixel unit to better adapt to the layered structure of the two-dimensional perovskite crystal, improving charge collection efficiency. When incident photons generate electron-hole pairs in the two-dimensional perovskite crystal, the electrons and holes move along the electric field direction and are collected by the anode and cathode, respectively. Due to the special arrangement of the pixel units, the charge collection path is more defined, reducing charge loss.

[0042] Figure 4 A schematic diagram of the structure of a pixel electrode in another embodiment of this application is shown.

[0043] refer to Figures 1-4 As an example, in the diagram, the X direction is horizontal, the Y direction is vertical, and the Z direction is vertical. Figure 2 The diagram shows the structure of a vertically arranged two-dimensional perovskite photon counting detector module. The crystal thickness W is the thickness of a crystal unit in the interlayer direction of the two-dimensional perovskite crystal module, and the crystal depth H is the distance between the two ends of a crystal unit in the two-dimensional perovskite crystal module, namely the planar electrode and the pixel electrode.

[0044] In some embodiments, the interlayer direction of the two-dimensional perovskite crystal can be designed to be consistent with the narrow side direction of the corresponding pixel unit, according to the actual application requirements of the small pixel direction, such as the X direction or the Z direction.

[0045] exist Figure 3 In the embodiments described, the interlayer direction of the two-dimensional perovskite crystal is the X direction, the in-plane structure is a YZ plane, the in-plane direction is the Z direction, and the Y direction is perpendicular to the plane of the paper. The carrier mobility in the interlayer direction (X direction) of the two-dimensional perovskite crystal is poor, while the in-plane mobility (YZ plane) is high. Effective charge transport can occur in the in-plane, while the interlayer can form a natural barrier for charge sharing. Therefore, miniaturization in the X direction can significantly reduce the small pixel charge sharing effect of semiconductors (such as CdTe, CZT, Si, etc.) commonly used in photon counting detectors (with isotropic mobility).

[0046] exist Figure 4 In the embodiments described, the interlayer direction of the two-dimensional perovskite crystal is the Z direction, the in-plane structure is an XY plane, the in-plane direction is the X direction, and the Y direction is perpendicular to the plane of the paper. This structure can achieve small pixelation in the Z direction.

[0047] In some embodiments, the length ratio K of the narrow side to the long side of the pixel unit ranges from 0.002 to 0.5. In the embodiments of this application, this ratio range ensures that the pixel unit has an appropriate shape, guaranteeing both sufficient spatial resolution and efficient charge collection. When the value of K is small, the narrow side of the pixel unit is shorter than the long side, which is beneficial for improving spatial resolution. When the value of K is large, the narrow side of the pixel unit is longer than the long side, which is beneficial for improving charge collection efficiency.

[0048] In some embodiments, the depth H of each crystal unit along the in-plane direction is 0.1 mm to 50 mm. In the embodiments of this application, the depth H of each crystal unit along the in-plane direction is 0.1 mm to 50 mm, which ensures both sufficient X-ray absorption efficiency and effective charge collection. When the crystal unit depth is too low, the X-ray absorption efficiency will decrease; when the crystal unit is too thick, charge recombination loss may occur during transport.

[0049] In some embodiments, the thickness of each crystal unit along the interlayer direction is 0.01 mm to 100 mm. In some embodiments, the thickness can be adjusted according to the manufacturing process and application requirements to achieve a suitable detection area, and multiple thin crystal units are combined into a thick crystal unit in the interlayer direction by a bonding process. In some embodiments, the thickness of each crystal unit along the interlayer direction is 0.01 mm to 1 mm. It is understood that in some embodiments of this application, the crystal unit is the smallest component of a two-dimensional perovskite crystal module.

[0050] In some embodiments, the narrow side length of each pixel unit is 0.005mm-1mm. In the embodiments of this application, a narrow side length of 0.005mm-1mm for the pixel unit enables it to provide sufficiently high spatial resolution while ensuring manufacturing feasibility. The selection of the narrow side length needs to consider various factors, including the required spatial resolution, manufacturing process limitations, and charge collection efficiency.

[0051] In some embodiments, the ratio of the thickness of the crystal unit along the interlayer direction of the two-dimensional perovskite crystal to the narrow side length of the pixel unit is 2:1 to 10000:1. In some embodiments, the thickness of the two-dimensional perovskite crystal unit can also be further extended by bonding multiple crystal units in the interlayer direction.

[0052] In some embodiments, the depth of the crystal unit is 0.1mm-50mm. Specifically, the depth of the crystal unit is the distance between the planar electrode and the pixel electrode. The depth of the crystal unit can be set as needed.

[0053] The two-dimensional perovskite crystal unit has interlayer and in-plane orientations. The carrier transport performance in both orientations exhibits significant anisotropy. Specifically, the carrier mobility is lower in the interlayer orientation and higher in the in-plane orientation.

[0054] In some embodiments, multiple pixel units corresponding to each pixel electrode are arranged in an array along a first direction and a second direction. The first direction is consistent with the interlayer direction, and the second direction is consistent with the in-plane direction. In some embodiments, the second direction is parallel to the layer of the crystal unit. In the embodiments of this application, this array arrangement allows the pixel units to cover the entire detection area, forming a complete two-dimensional image. The arrayed pixel units can independently collect and process signals from different locations, improving the spatial resolution of the detector.

[0055] In some embodiments, the general structural formula of two-dimensional perovskite materials is L2An-1BnX3n+1; where n≥1, L is a long-chain amine ion, A is a cation, B is a metal ion, and X is a halide ion. This general structural formula represents a class of two-dimensional perovskite materials with a layered structure. In the embodiments of this application, L is usually an organic long-chain amine ion, such as methylamine, ethylamine, butylamine, etc., for example, phenylethylammonium ion PEA+ (C6H5CH3CH2NH3+); A is usually a monovalent cation, such as cesium, methylamine, etc., for example, Cs+, methylammonium ion (CH3NH3+); B is usually a divalent metal ion, such as lead, tin, etc.; X is usually a halide ion, such as chlorine, bromine, iodine, etc. The value of n represents the thickness of the inorganic layer, and n is a natural number. When n=1, it is a single-layer inorganic layer; when n=2, it is a double-layer inorganic layer, and so on. Different n values ​​will result in different band gaps and photoelectric properties of the material.

[0056] In the embodiments of this application, the planar electrode is the cathode, and the pixel electrode is the anode. The planar electrode is a full-surface metal cathode covering one end of the crystal unit. In the embodiments of this application, when X-rays are incident on the two-dimensional perovskite crystal and electron-hole pairs are generated, electrons move towards the cathode, and holes move towards the anode. The full-surface metal cathode ensures the uniformity of the electric field distribution, which is beneficial for the effective collection of charges.

[0057] In some embodiments, the photon counting detector does not require cutting the crystal. Instead, a full-face metal cathode can be made from one side of the vertically aligned crystals using processes such as thermal evaporation, and a pixel anode can be made from the other side using processes such as flip-chip bonding.

[0058] In practical applications, photon counting detectors can be integrated into various X-ray devices, such as CT scanners, DR systems, industrial non-destructive testing equipment, particle detection equipment, or security inspection equipment. Multiple two-dimensional perovskite crystals can be arranged in an array along a first direction and a second direction, where the first direction aligns with the interlayer direction and the second direction aligns with the in-plane direction. In some embodiments, the second direction is parallel to the layer of the crystal unit. This arrangement allows the detector to cover a larger detection area, improving overall detection efficiency.

[0059] In the operation of a photon counting detector, when X-ray photons are incident on a two-dimensional perovskite crystal, electron-hole pairs are generated within the crystal. Under the influence of an applied electric field, the electrons and holes move towards the cathode and anode, respectively. Due to the special design of the pixel electrodes, each pixel unit can independently collect and process signals from different locations, thereby achieving photon counting and energy resolution.

[0060] In the embodiments of this application, a vertically aligned two-dimensional perovskite photon counting detector structure is designed by utilizing the significant differences in charge mobility on different crystal planes in a two-dimensional perovskite crystal structure, which can improve imaging resolution. Because the two-dimensional perovskite crystal structure has high in-plane mobility and poor interlayer mobility, effective charge transport can occur within the plane, while a natural barrier of charge sharing is formed between the layers.

[0061] Based on the actual application requirements of small pixel orientation (i.e., X or Z direction), the interlayer orientation of the two-dimensional perovskite can be designed to be consistent with the narrow side orientation of the corresponding pixel unit, thereby improving the imaging resolution in the corresponding direction.

[0062] In some embodiments of this application, an X-ray device is also provided, including the photon counting detector based on a two-dimensional perovskite crystal as described in the above embodiments.

[0063] In the embodiments of this application, the anisotropy of carrier transport properties on different crystal planes in two-dimensional perovskite crystal units allows for the design of asymmetric pixels both between layers and within the plane of the two-dimensional perovskite crystal unit. Due to the poorer interlayer electrical properties, a natural barrier to charge diffusion can be formed, thereby weakening the charge-sharing effect in PCD and achieving improved imaging resolution with smaller pixels. Based on the actual application requirements of the small pixel direction (i.e., the X or Z direction), the interlayer direction of the two-dimensional perovskite crystal unit can be designed to align with the narrow side direction of the corresponding small pixel, thereby improving the imaging resolution of the detector in the corresponding direction in X-ray scans such as CT scans. Furthermore, combined with ultra-thin chip integrated circuit technology, even smaller pixel sizes can be achieved.

[0064] In some embodiments, the X-ray device may be a CT scanner, a DR scanner, an industrial non-destructive testing device, a particle detection device, or a security inspection device. In these devices, a photon counting detector is used to detect X-ray photons and convert the photon signals into electrical signals, which are then converted into digital images by subsequent signal processing circuitry.

[0065] In this X-ray device, multiple two-dimensional perovskite crystal modules are arranged in an array along a first direction and a second direction. The first direction coincides with the interlayer direction, and the second direction coincides with the in-plane direction. In some embodiments, the second direction is parallel to the layer of the crystal unit. The array arrangement of multiple two-dimensional perovskite crystal modules can cover a larger detection area and improve the overall detection efficiency.

[0066] In some embodiments, reference Figure 1 The interlayer orientation of the two-dimensional perovskite crystal module is the X-direction and / or Z-direction of the X-ray device. In some embodiments, the interlayer orientation of some two-dimensional perovskite crystal modules in the X-ray device is the X-direction, and the interlayer orientation of some two-dimensional perovskite crystals is the Y-direction. The number and position of each part of the two-dimensional perovskite crystal module can be set as needed. In the embodiments of this application, the interlayer orientation of the two-dimensional perovskite crystal units in the X-ray device can be set as needed to adapt to different application scenarios.

[0067] In some embodiments, the X-ray equipment is a CT scanner, with a photon counting detector mounted on the CT gantry. As the gantry rotates, it acquires X-ray transmission data of the human body or object from different angles. This data is processed by a reconstruction algorithm to generate tomographic images of the human body or object. Because the photon counting detector has energy resolution capabilities, it enables spectral CT imaging, providing richer diagnostic information.

[0068] In some embodiments, the X-ray device is a DR (radiofrequency) device, and a photon counting detector is used to directly acquire X-ray transmission images. Compared with conventional energy integrating detectors, photon counting detectors can provide higher contrast and lower noise, improving image quality.

[0069] In some embodiments, the X-ray equipment is an industrial non-destructive testing device, and the photon counting detector is used to detect internal defects in industrial products. Because the photon counting detector has high spatial resolution and the ability to acquire X-ray energy spectrum information, it can more accurately identify and locate defects.

[0070] In some embodiments, the X-ray device is a particle detection device, and the photon counting detector is used to detect high-energy particles. Two-dimensional perovskite crystals exhibit excellent response characteristics to high-energy particles, making this detector a potential application in high-energy physics experiments.

[0071] In some embodiments, the X-ray equipment is a security inspection device, and the photon counting detector is used for security scanning based on a linear array detector. The energy spectral resolution of the photon counting detector enables more accurate identification of information such as the atomic number of a substance when used for object scanning, making this detector potentially valuable in security inspection equipment based on a linear array detector.

[0072] In practical applications of X-ray equipment, the performance of the photon counting detector directly affects the imaging quality and diagnostic accuracy of the equipment. The performance of X-ray equipment can be improved by optimizing the composition and structure of the two-dimensional perovskite crystal, the design of the electrodes, and the size and arrangement of the pixel units.

[0073] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0074] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A photon counting detector based on a two-dimensional perovskite crystal, characterized in that, The photon counting detector includes: Multiple two-dimensional perovskite crystal modules, each of the two-dimensional perovskite crystal modules including at least one crystal unit, the crystal unit having an interlayer orientation; A planar electrode is disposed at one end of the crystal unit; A pixel electrode is disposed at the other end of the crystal unit opposite to the planar electrode. The pixel electrode includes multiple pixel units, each pixel unit having a narrow side and a long side, the extension direction of the narrow side of the pixel unit being consistent with the interlayer direction.

2. The photon counting detector as described in claim 1, characterized in that, The long side of the pixel unit extends parallel to the layer of the crystal unit, and the interlayer direction is perpendicular to the layer of the crystal unit.

3. The photon counting detector as described in claim 1, characterized in that, The ratio K of the narrow side to the long side of the pixel unit is in the range of 0.

002. <K<1。 4. The photon counting detector as described in claim 1, characterized in that, The thickness of each crystal unit along the interlayer direction is 0.01mm-100mm, and the narrow side length of each pixel unit is 0.005mm-1mm.

5. The photon counting detector as described in claim 1, characterized in that, The plurality of pixel units of each pixel electrode are arranged in an array along a first direction and a second direction, wherein the first direction is consistent with the interlayer direction and the second direction is parallel to the layer of the crystal unit.

6. The photon counting detector as claimed in claim 1, characterized in that, The general structural formula of the two-dimensional perovskite material in the two-dimensional perovskite crystal module is L2An-1BnX3n+1; Where n≥1, L is a long-chain amine ion, A is a cation, B is a metal ion, and X is a halide ion.

7. The photon counting detector as claimed in claim 1, characterized in that, The planar electrode is the cathode, and the pixel electrode is the anode; The planar electrode is a full-surface metal cathode covering one end of the crystal unit.

8. An X-ray device, characterized in that, Including the photon counting detector as described in any one of claims 1-7.

9. The X-ray device as described in claim 8, characterized in that, Each of the two-dimensional perovskite crystal modules includes multiple crystal units, which are arranged in an array along a first direction and a second direction. The first direction is consistent with the interlayer direction, and the second direction is parallel to the layer of the crystal unit.

10. The X-ray device as described in claim 8, characterized in that, The X-ray equipment includes CT equipment, DR equipment, industrial non-destructive testing equipment, particle detection equipment, or security inspection equipment.