Display panel, preparation method thereof and display device

Abstract

The application provides a display panel and a preparation method thereof and a display device. The display panel comprises an array substrate, a first electrode layer on one side of the array substrate, a pixel definition layer on the first electrode layer, a pixel opening of the pixel definition layer overlapping a first electrode projection of the first electrode layer, an isolation structure on the pixel definition layer, the isolation structure comprising an isolation part and an isolation opening and a light transmission opening enclosed by the isolation part, the isolation part being composed of stacked first and second sub-layers, a shielding part, the shielding part being in the same layer as the first sub-layer and overlapping the light transmission opening projection, a touch layer on the isolation structure, the touch layer comprising a plurality of touch units overlapping the shielding part projection. The application shields the touch units and the first electrode through the shielding part in the light transmission opening, blocks the parasitic capacitance between the touch layer and the first electrode layer, reduces the radio frequency interference, and balances the light transmission and signal shielding by overlapping the light transmission opening projection to meet the light transmission requirement of the under-screen sensor, thereby solving the touch false alarm problem caused by the light transmission hole in the traditional process.

Description

Technical Field

[0001] This application relates to the field of display device technology, and in particular to a display panel and its manufacturing method, and a display device. Background Technology

[0002] Organic light-emitting diode (OLED) display panels and other flat panel display devices using light-emitting diode (LED) devices are widely used in various consumer electronics products such as mobile phones, televisions, personal digital assistants, digital cameras, laptops, and desktop computers due to their advantages such as high image quality, energy saving, thin body and wide range of applications, becoming the mainstream of display devices.

[0003] However, the performance of current OLED products needs to be improved.

[0004] The cited patents CN118251982A, CN115666161A, CN116648095A, CN117062489A, CN118678742A, CN118785761A, CN115224220A, CN118678729A, CN118660529A, and CN118660589A describe the relevant content of the technology without fine metal masks, and are provided for reference. Summary of the Invention

[0005] This application provides a display panel and its manufacturing method, which can improve the problem of crosstalk between display signals and touch signals caused by the light-transmitting hole used to achieve light transmission in the under-display sensor area.

[0006] In a first aspect, embodiments of this application provide a display panel, comprising: an array substrate; a first electrode layer located on one side of the array substrate, the first electrode layer including at least one first electrode; a pixel definition layer located on the side of the first electrode layer away from the array substrate, including a pixel definition portion and a pixel opening formed by the pixel definition portion, the orthographic projection of the pixel opening on the array substrate at least partially overlapping the first electrode; an isolation structure located on the side of the pixel definition layer away from the first electrode layer, including an isolation portion and an isolation opening and a light-transmitting opening formed by the isolation portion, the isolation portion including a first sub-layer and a second sub-layer stacked in a direction away from the array substrate, the isolation opening at least partially overlapping the pixel opening; a shielding portion located on the side of the pixel definition layer away from the first electrode, the shielding portion being disposed in the same layer as the first sub-layer, and the orthographic projection of the shielding portion on the array substrate at least partially overlapping the orthographic projection of the light-transmitting opening on the array substrate; and a touch layer located on the side of the isolation structure away from the pixel definition layer, the touch layer including a plurality of touch units, the orthographic projection of the touch units on the array substrate at least partially overlapping the orthographic projection of the shielding portion on the array substrate.

[0007] The display panel provided in the first aspect of this application effectively solves the problem of radio frequency interference between touch signals and display signals caused by the light-transmitting hole in the under-screen photosensitive sensor area through optimized isolation structure design.

[0008] The display panel provided in the first aspect of this application has at least the following beneficial effects:

[0009] First, the isolation structure includes a first sub-layer and a second sub-layer stacked together, wherein the shielding part is disposed on the same layer as the first sub-layer and overlaps with the orthographic projection of the light-transmitting opening on the array substrate. The shielding part achieves a shielding effect at the light-transmitting opening, blocking the parasitic capacitance path between the touch unit of the touch layer and the first electrode of the first electrode layer, and significantly reducing the radio frequency interference between the display signal and the touch signal.

[0010] Secondly, the isolation section overlaps with the pixel opening to ensure that the optical display performance of the display panel is not affected. Meanwhile, the overlapping design of the light-transmitting opening also takes into account the light transmission requirements of the sensor area under the screen, achieving a balance between high light transmittance and signal shielding, and solving the problem of false alarm points in the touch layer caused by light-transmitting holes in traditional processes.

[0011] According to any embodiment of the first aspect of this application, the materials used to prepare the first sublayer and the shielding portion include light-transmitting and conductive materials;

[0012] According to any embodiment of the first aspect of this application, the material for preparing the first sublayer and the shielding portion is indium zinc oxide;

[0013] According to any embodiment of the first aspect of this application, the material for preparing the first sublayer and the shielding portion is indium tin oxide;

[0014] According to any embodiment of the first aspect of this application, the isolation structure further includes a third sub-layer, which is disposed on the side of the second sub-layer away from the array substrate, and the third sub-layer protrudes toward the isolation opening relative to the second sub-layer.

[0015] According to any embodiment of the first aspect of this application, the first sub-layer protrudes toward the isolation opening relative to the second sub-layer;

[0016] According to any embodiment of the first aspect of this application, the thickness of the portion of the first sublayer that protrudes toward the isolation opening relative to the second sublayer is smaller than the thickness of the other portion of the first sublayer that overlaps with the second sublayer.

[0017] According to any embodiment of the first aspect of this application, the thickness of the portion of the first sublayer that protrudes toward the isolation opening relative to the second sublayer is smaller than the thickness of the shielding portion;

[0018] According to any embodiment of the first aspect of this application, the thickness of the portion of the first electrode that overlaps with the pixel opening is the same as the thickness of the other portion of the first electrode that overlaps with the pixel definition portion.

[0019] Secondly, embodiments of this application provide a method for manufacturing a display panel, comprising:

[0020] A first electrode layer is fabricated on one side of the array substrate, the first electrode layer including at least one first electrode;

[0021] A pixel definition material layer is fabricated on the side of the first electrode layer away from the array substrate;

[0022] An isolation structure is prepared on the side of the pixel definition material layer away from the first electrode layer. The isolation structure includes a shielding portion, an isolation portion, and an isolation opening and a light-transmitting opening formed by at least a portion of the isolation portion. The orthogonal projection of the isolation opening on the array substrate overlaps at least partially with the first electrode. The isolation portion includes a first sub-layer and a second sub-layer formed sequentially in the direction away from the array substrate. At least a portion of the first sub-layer is retained at the position of the light-transmitting opening and forms a shielding portion. The orthogonal projection of the shielding portion on the array substrate overlaps at least partially with the orthogonal projection of the light-transmitting opening on the array substrate.

[0023] A touch unit is fabricated on the side of the isolation structure away from the pixel definition material layer to form a touch layer, and the orthographic projection of the touch unit on the array substrate at least partially overlaps with the orthographic projection of the shielding portion on the array substrate.

[0024] According to any embodiment of the second aspect of this application, the step of fabricating an isolation structure on the side of the pixel defining material layer away from the first electrode layer further includes:

[0025] An isolation structure material layer is provided on the side of the pixel definition material layer that faces away from the array substrate;

[0026] A first photoresist material layer is disposed on the side of the isolation structure material layer facing away from the array substrate;

[0027] The first photoresist layer is obtained by patterning the first photoresist material layer using a first halftone mask, so as to form a first via in the first region and a groove in the second region.

[0028] An isolation structure is obtained by patterning an isolation material layer using a first photoresist layer, so as to form an isolation opening in a first region and a light-transmitting opening in a second region, with at least a portion of the shielding part exposed in the light-transmitting opening.

[0029] According to any embodiment of the second aspect of this application, the step of patterning the isolation structure using the first photoresist layer on the isolation material layer further includes:

[0030] Etch the portion of the isolation structure material layer exposed by the first via to form an isolation pre-opening;

[0031] The first photoresist layer is thinned, and the first photoresist layer in the groove in the second region is removed to form a second via.

[0032] The portion of the isolation structure material layer exposed by the second via is etched to form an isolation opening and a light-transmitting opening, thus obtaining the isolation structure.

[0033] Remove the first photoresist layer;

[0034] According to any embodiment of the second aspect of this application, the isolation structure material layer includes a first sub-material layer and a second sub-material layer, and the step of etching the portion of the isolation structure material layer exposed by the first via and forming the isolation opening further includes:

[0035] A portion of the second sub-material layer at the location of the first via is dry-etched to form an isolation pre-opening;

[0036] A portion of the second sub-material layer at the location of the first via is etched using a wet etching process.

[0037] According to any embodiment of the second aspect of this application, the step of etching the portion of the isolation structure material layer exposed by the second via and forming the light-transmitting opening further includes:

[0038] A portion of the second sub-material layer at the location of the second via is etched using a dry etching method, while retaining a portion of the second sub-material layer.

[0039] The first sub-material layer at the location of the first via is formed by wet etching to create an isolation opening;

[0040] The remaining portion of the second sub-material layer at the location of the second via is etched with a developer to form a light-transmitting opening, and the shielding portion located at the location of the light-transmitting opening is exposed through the light-transmitting opening;

[0041] According to any embodiment of the second aspect of this application, the step of wet etching the first sub-material layer at the location of the first via further includes:

[0042] The first sub-material layer at the location of the first via is etched using a composite solution containing oxalic acid.

[0043] According to any embodiment of the second aspect of this application, the isolation structure material layer further includes a third sub-material layer, and the step of wet etching a portion of the second sub-material layer at the location of the first via further includes:

[0044] A portion of the third sub-material layer at the location of the first via is etched using a wet etching process. The etching selectivity of the second sub-material layer is higher than that of the third sub-material layer. The third sub-material layer protrudes relative to the second sub-material layer toward the isolation pre-opening.

[0045] According to any embodiment of the second aspect of this application, the step of patterning the first photoresist material layer using a first halftone mask to obtain the first photoresist layer further includes:

[0046] A first halftone mask is disposed on the side of the first photoresist material layer away from the isolation structure material layer. The first halftone mask includes a light-transmitting area and a light-transmitting area. The light-transmitting area is disposed corresponding to the location where the isolation opening is prepared, and the light-transmitting area is disposed corresponding to the location where the light-transmitting opening is prepared.

[0047] Illuminate the side of the first halftone mask away from the photoresist layer;

[0048] The photoresist layer is developed using a developing solution to form a first via in the first region corresponding to the light-transmitting area and the light-transmitting area in the second region.

[0049] According to any embodiment of the second aspect of this application, the developing solution includes tetramethylammonium hydroxide;

[0050] According to any embodiment of the second aspect of this application, the step of thinning the photoresist layer further includes: performing an ashing treatment on the first photoresist layer.

[0051] According to any embodiment of the second aspect of this application, the array substrate includes a display area and a non-display area disposed around the display area, and the step of preparing a pixel definition layer on the side of the first electrode layer away from the array substrate further includes:

[0052] A pixel definition material layer is fabricated on the side of the first electrode layer away from the array substrate;

[0053] A second photoresist material layer is disposed on the side of the pixel definition material layer facing away from the array substrate;

[0054] The second photoresist layer is obtained by patterning the second photoresist material layer using a second halftone mask, so as to form a third via in the third region and a fourth via in the fourth region. The third region is located in the display area and the fourth region is located in the non-display area.

[0055] The pixel definition material layer is patterned using a second photoresist layer to form pixel openings in the third region and connection openings in the fourth region.

[0056] According to any embodiment of the second aspect of this application, the step of fabricating a pixel definition layer on the side of the first electrode layer away from the array substrate includes:

[0057] A pixel definition material layer is fabricated on the side of the first electrode layer away from the array substrate;

[0058] Following the step of fabricating the isolation structure on the side of the pixel-defined material layer away from the first electrode layer, the following is also included:

[0059] A second photoresist material layer is disposed on the side of the pixel definition material layer facing away from the array substrate;

[0060] The second photoresist layer is obtained by patterning the second photoresist material layer using a second halftone mask, so as to form a third via in the third region and a fourth via in the fourth region. The third region is located in the display area and the fourth region is located in the non-display area.

[0061] The pixel definition material layer is patterned using a second photoresist layer to form pixel openings in the third region and connection openings in the fourth region.

[0062] Thirdly, embodiments of this application provide a display device, including a display panel provided by any of the embodiments of the first aspect of this application, or a display panel prepared by the method for preparing a display panel provided by any of the embodiments of the second aspect of this application. Attached Figure Description

[0063] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments of this application will be briefly introduced below. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0064] Figure 1 This is a schematic diagram of the planar structure of a display panel provided in the first aspect embodiment of this application;

[0065] Figure 2 yes Figure 1 Enlarged structural diagram of region A in the middle;

[0066] Figure 3 yes Figure 2 Schematic diagram of the cross-sectional structure in the middle BB direction;

[0067] Figure 4 yes Figure 3 A magnified structural diagram of region C in the diagram;

[0068] Figure 5 This is a schematic flowchart of a method for manufacturing a display panel according to a second aspect embodiment of this application;

[0069] Figure 6 This is a schematic flowchart of another method for manufacturing a display panel provided in the second aspect of this application;

[0070] Figure 7 This is a schematic flowchart of another method for manufacturing a display panel provided in the second aspect of this application;

[0071] Figures 8a to 8d This is a schematic diagram of the process steps of another method for manufacturing a display panel provided in the second aspect embodiment of this application;

[0072] Figure 9 This is a schematic flowchart of another method for manufacturing a display panel provided in the second aspect of this application;

[0073] Figures 10a to 10b This is a schematic diagram of the process steps of another method for manufacturing a display panel provided in the second aspect embodiment of this application;

[0074] Figure 11 This is a schematic flowchart of another method for manufacturing a display panel provided in the second aspect of this application;

[0075] Figures 12a to 12c This is a schematic diagram of the process steps of another method for manufacturing a display panel provided in the second aspect embodiment of this application;

[0076] Figure 13 This is a schematic flowchart of another method for manufacturing a display panel provided in the second aspect of this application;

[0077] Figures 14a to 14c This is a schematic diagram of the process steps of another method for manufacturing a display panel provided in the second aspect embodiment of this application;

[0078] Figure 15 This is a schematic flowchart of another method for manufacturing a display panel provided in the second aspect of this application;

[0079] Figures 16a to 16d This is a schematic diagram of the process steps of another method for manufacturing a display panel provided in the second aspect embodiment of this application;

[0080] Figure 17 This is a schematic flowchart of another method for manufacturing a display panel provided in the second aspect of this application;

[0081] Figures 18a to 18e This is a schematic diagram of the process steps of another method for manufacturing a display panel provided in the second aspect embodiment of this application.

[0082] Marker explanation:

[0083] 100 - Display panel;

[0084] 10 - Array substrate; AA - Display area; NA - Non-display area;

[0085] 20 - First electrode layer; 21 - First electrode;

[0086] 30 - Pixel definition layer; 31 - Pixel definition section; 32 - Pixel opening; 33 - Connection opening;

[0087] 30'-pixel defines the material layer;

[0088] 40 - Isolation structure; 41 - Isolation section; 41a - First sublayer; 41b - Second sublayer; 41c - Third sublayer; 42 - Isolation opening; 43 - Light-transmitting opening; 44 - Shielding section;

[0089] 40' - Isolation structural material layer; 41a' - First sub-material layer; 41b' - Second sub-material layer; 41c' - Third sub-material layer; 42' - Isolation pre-opening;

[0090] 50 - Touch layer; 51 - Touch unit;

[0091] 60 - First photoresist layer; 60a - First region; 60b - Second region; 61 - First via; 621 - Groove; 622 - Second via;

[0092] 60' - First photoresist material layer;

[0093] 70 - First halftone mask; 71 - Transparent area; 72 - Semi-transparent area;

[0094] 80 - Second photoresist layer; 80a - Third region; 80b - Fourth region; 81 - Third via; 82 - Fourth via;

[0095] 80' - Second photoresist material layer. Detailed Implementation

[0096] The features and exemplary embodiments of various aspects of this application will be described in detail below. To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only intended to explain this application and not to limit it. For those skilled in the art, this application can be implemented without some of these specific details. The following description of the embodiments is merely to provide a better understanding of this application by illustrating examples.

[0097] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus that includes said element.

[0098] Various modifications and variations can be made to this application without departing from its spirit or scope, which will be apparent to those skilled in the art. Therefore, this application is intended to cover modifications and variations of the invention that fall within the scope of the corresponding claims (the claimed technical solutions) and their equivalents. It should be noted that the embodiments provided in this application can be combined with each other without contradiction.

[0099] In related technologies, Visionox's intelligent pixelation (ViP) display panel products, such as smartphones, require light-transmitting holes to be opened in the metal auxiliary cathode area of ​​the display panel to meet the light transmission requirements of the sensors as under-display light sensors, such as fingerprint recognition and infrared sensors, become more widespread.

[0100] However, the traditional metal auxiliary cathode area uses a three-layer stacked structure of Mo / Al / Ti (molybdenum / aluminum / titanium). After opening the light-transmitting hole, the touch panel (TP) signal and the display signal are separated by a lack of cathode or other metal layer shielding, resulting in parasitic capacitance, which causes radio frequency interference and thus causes false touch alarms.

[0101] While existing technologies adapt to the light transmission requirements of under-display sensors by opening holes in the metal-assisted cathode area, they have not effectively solved the signal shielding problem. Because there is no conductive shielding layer after the metal layer is etched in the light-transmitting hole area, the touch signal and the display signal are directly coupled, and the interference intensity increases with the increase of panel integration.

[0102] In addition, traditional processes require multiple masks, which leads to complex processes and increased costs.

[0103] Therefore, there is an urgent need for a solution that balances light transmittance, signal shielding, and process simplification to address radio frequency interference and false touch alarms in the light-transmitting hole area, while also optimizing production costs.

[0104] In order to solve the above-mentioned technical problems, technical considerations and technical concepts, this application provides a display panel and a method for manufacturing the same.

[0105] The following is combined Figures 1 to 18e The display panel and its manufacturing method provided in the embodiments of this application will be described in detail.

[0106] Figure 1 This diagram illustrates a planar structure of a display panel 100 according to a first aspect embodiment of the present application. Figure 2 It shows Figure 1 The magnified structure of region A in the middle, Figure 3 It shows Figure 2 Cross-sectional structure in the middle BB direction.

[0107] Please refer to the following: Figures 1 to 3 In a first aspect, embodiments of this application provide a display panel 100, including an array substrate 10, a first electrode layer 20, a pixel definition layer 30, an isolation structure 40, and a touch layer 50.

[0108] The first electrode layer 20 is located on one side of the array substrate 10, and the first electrode layer 20 includes at least one first electrode 21.

[0109] The pixel definition layer 30 is located on the side of the first electrode layer 20 away from the array substrate 10. It includes a pixel definition portion 31 and a pixel opening 32 formed by the pixel definition portion 31. The orthogonal projection of the pixel opening 32 on the array substrate 10 at least partially overlaps with the first electrode 21.

[0110] An isolation structure 40 is located on the side of the pixel definition layer 30 away from the first electrode layer 20. It includes an isolation portion 41, an isolation opening 42 and a light-transmitting opening 43 formed by the isolation portion 41. The isolation portion 41 includes a first sub-layer 41a, a second sub-layer 41b and a third sub-layer 41c stacked in the direction away from the array substrate 10. The isolation opening 42 at least partially overlaps with the pixel opening 32.

[0111] The shielding portion 44 is located on the side of the pixel definition layer 30 away from the first electrode layer 20. The shielding portion 44 is disposed on the same layer as the first sub-layer 41a, and the orthographic projection of the shielding portion 44 on the array substrate 10 and the orthographic projection of the light-transmitting opening 43 on the array substrate 10 at least partially overlap.

[0112] The touch layer 50 is located on the side of the isolation structure 40 away from the pixel definition layer 30. The touch layer includes a plurality of touch units 51. The orthographic projection of the touch unit 51 on the array substrate 10 overlaps at least partially with the orthographic projection of the shielding portion 44 on the array substrate 10.

[0113] The display panel 100 provided in the first aspect embodiment of this application effectively solves the problem of radio frequency interference between touch signals and display signals caused by light-transmitting holes in the under-screen photosensitive sensor area through optimized isolation structure design.

[0114] The display panel 100 provided in the first aspect embodiment of this application has at least the following beneficial effects:

[0115] First, the isolation structure 40 includes a first sub-layer 41a and a second sub-layer 41b stacked together. The shielding part 44 is disposed on the same layer as the first sub-layer 41a and overlaps with the orthographic projection of the light-transmitting opening 43 on the array substrate 10. The shielding part 44 achieves a shielding effect at the light-transmitting opening 43, blocking the parasitic capacitance path between the touch unit 51 of the touch layer 50 and the first electrode 21 of the first electrode layer 20, and significantly reducing the radio frequency interference between the display signal and the touch signal.

[0116] Secondly, the isolation section 41 overlaps with the pixel opening 32 through the isolation opening 42, ensuring that the optical display performance of the display panel 100 is not affected. The projection overlap design of the light-transmitting opening 43 also takes into account the light transmission requirements of the sensor area under the screen, achieving a balance between high light transmittance and signal shielding, and solving the problem of false alarm points of the touch layer 50 caused by the light-transmitting hole in the traditional process.

[0117] The array substrate 10 serves as a basic support layer, providing space for the array circuitry and basic support for the entire display panel 100.

[0118] The first electrode layer 20 located on one side of the array substrate 10 includes at least one first electrode 21 for driving the light emission function.

[0119] The pixel definition layer 30 covering the first electrode layer 20 has a pixel opening 32 formed by the pixel definition portion 31. The orthogonal projection of the pixel opening 32 on the array substrate 10 overlaps at least partially with the first electrode 21, ensuring that the first electrode 21 is exposed through the pixel opening 32 to achieve optical display.

[0120] An isolation structure 40 is provided above the pixel definition layer 30, including an isolation portion 41 and an isolation opening 42 and a light-transmitting opening 43 formed therewith.

[0121] The isolation section 41 is composed of a first sub-layer 41a and a second sub-layer 41b stacked in the direction away from the array substrate 10. The isolation opening 42 overlaps with the pixel opening 32 in orthographic projection, further ensuring display performance.

[0122] The shielding portion 44 is the first sub-layer 41a in the area of ​​the light-transmitting opening 43 that is not etched, and overlaps with the projection of the light-transmitting opening 43 on the pixel definition layer 30. The conductive properties of the shielding portion 44 block the parasitic capacitance between the touch layer 50 and the first electrode layer 20.

[0123] For example, during the manufacturing process of the isolation structure 40, the first sublayer 41a is selectively etched using a halftone mask. Specifically, the first sublayer 41a of the light-transmitting opening 43 is retained in the etching step, while the first sublayer 41a of other areas, such as the isolation opening 42, is removed, thereby forming the shielding portion 44.

[0124] A further detailed description of the method for manufacturing the display panel 100 will be provided in the specific embodiments of the method for manufacturing the display panel provided in the second aspect of this application.

[0125] The touch layer 50 is located on the side of the isolation structure 40 away from the first electrode layer 20, and is physically isolated from the shielding part 44. Its touch signal is prevented from coupling with the display signal of the first electrode layer 20 by the shielding effect of the shielding part 44.

[0126] The orthographic projection of the touch unit 51 on the array substrate 10 and the orthographic projection of the shielding portion 44 on the array substrate 10 at least partially overlap, further ensuring the shielding effect between the touch signal and the display signal and avoiding coupling. Exemplarily, the "at least partially overlap" in the display panel 100 provided in the first aspect embodiment of this application should be understood as the corresponding arrangement between the opening and the structure so that the structure can be exposed by the opening position, or the corresponding arrangement between the openings so that the openings can communicate with each other.

[0127] The orthographic projection of the pixel opening 32 on the array substrate 10 at least partially overlaps with the orthographic projection of the first electrode 21. This means that the projection area of ​​the pixel opening 32 on the array substrate 10 partially overlaps with the coverage area of ​​the first electrode 21, ensuring that the first electrode 21 is exposed through the pixel opening 32 to drive the light-emitting function.

[0128] The isolation opening 42 and the pixel opening 32 at least partially overlap, meaning that the projection area of ​​the isolation opening 42 on the array substrate 10 partially coincides with the projection area of ​​the pixel opening 32. Furthermore, the isolation opening 42 and the pixel opening 32 are connected to ensure that the optical display performance of the display panel 100 is not affected by the isolation structure 40.

[0129] The orthographic projection of the shielding part 44 on the array substrate 10 and the orthographic projection of the light-transmitting opening 43 on the array substrate 10 at least partially overlap, meaning that the position of the shielding part 44 corresponds to the projection area of ​​the light-transmitting opening 43. The shielding part 44 can cover part or all of the area of ​​the light-transmitting opening 43, and achieve signal shielding function while transmitting light.

[0130] The orthographic projection of the shielding part 44 on the array substrate 10 and the orthographic projection of the touch unit 51 on the array substrate 10 at least partially overlap, meaning that the position of the shielding part 44 corresponds to the position of the touch unit 51, and the shielding part 44 can be exposed through the light-transmitting opening 43 to achieve the shielding function of the touch signal.

[0131] The first electrode layer 20 is located on one side of the array substrate 10 and serves as an anode or pixel driving electrode.

[0132] The positional relationship between the touch layer 50, the shielding part 44, and the first electrode 21 jointly ensures the shielding effect. Specifically, the isolation structure 40 is located above the pixel definition layer 30, and a portion of its first sub-layer 41a is configured as the shielding part 44 corresponding to the light-transmitting opening 43.

[0133] The touch layer 50 is located on the side of the isolation structure 40 away from the first electrode 21 and includes a touch unit 51. The touch unit 51 uses electrodes such as a metal mesh or indium tin oxide (ITO).

[0134] The shielding part 44 is located between the touch layer 50 and the first electrode layer 20 to achieve physical isolation, forming a conductive isolation layer, and blocking the direct capacitive coupling between the touch unit 51 of the touch layer 50 and the first electrode 21 of the first electrode layer 20.

[0135] The first sublayer 41a of the shielding part 44 is conductive and can absorb or disperse the alternating electric field between the touch signal and the display signal, thereby reducing parasitic capacitance.

[0136] The shielding part 44 covers the projection area of ​​the light-transmitting opening 43, ensuring that a conductive shielding layer is further preserved on the basis of opening the light-transmitting path of the sensor, so as to avoid signal interference caused by the light-transmitting hole.

[0137] In some embodiments, the materials used to prepare the first sublayer 41a and the shielding portion 44 include light-transmitting and conductive materials.

[0138] In these embodiments, the selection of the light-transmitting and conductive material of the first sublayer 41a can ensure that the conductive function of the isolation structure 40 as an auxiliary cathode is not affected, while the selection of the light-transmitting and conductive material of the shielding part 44 ensures that the setting of the light-transmitting opening 43 of the shielding part 44 will not affect the light transmission path of the under-screen optical sensor.

[0139] In some alternative embodiments, the first sublayer 41a and the shielding portion 44 are made of indium zinc oxide.

[0140] In these alternative embodiments, the first sublayer 41a and the shielding portion 44 are made of indium zinc oxide (IZO), which has both high light transmittance and electrical conductivity.

[0141] IZO material combines high light transmittance and excellent conductivity, which can meet the light transmission requirements of the under-display sensor area. At the same time, through its conductivity, it forms a shield 44 in the light-transmitting opening 43 area, blocking the parasitic capacitance path between the touch layer 50 and the first electrode layer 20, thereby reducing radio frequency interference.

[0142] For example, IZO exhibits good stability in chemical etching processes: its alkali resistance protects the underlying anode layer from damage during wet etching of the aluminum layer, while in dry etching or selective wet etching, such as when using a composite solution containing oxalic acid, the controllable etching rate of IZO allows for precise preservation of the shielding portion 44 in the area of ​​the light-transmitting opening 43 through a halftone mask process, avoiding additional masking steps.

[0143] A further detailed description of the method for manufacturing the display panel 100 will be provided in the specific embodiments of the method for manufacturing the display panel 100 provided in the second aspect of this application.

[0144] In some alternative embodiments, the first sublayer 41a and the shielding portion 44 are made of indium tin oxide.

[0145] In these alternative embodiments, the first sublayer 41a and the shielding portion 44 are made of indium tin oxide (ITO), which has both high light transmittance and electrical conductivity.

[0146] ITO material also has high light transmittance and excellent conductivity, which can meet the light transmission requirements of the under-display sensor area. At the same time, through its conductivity, it forms a shield 44 in the light-transmitting opening 43 area, blocking the parasitic capacitance path between the touch layer 50 and the first electrode layer 20, thereby reducing radio frequency interference.

[0147] Figure 4 It shows Figure 3 An enlarged structure of region C in the diagram.

[0148] Please see Figure 4 In some embodiments, the isolation structure 40 further includes a third sub-layer 41c, which is disposed on the side of the second sub-layer 41b away from the array substrate 10, and the third sub-layer 41c protrudes toward the isolation opening 42 relative to the second sub-layer 41b.

[0149] In these embodiments, the positioning of the third sublayer 41c and the second sublayer 41b further facilitates the isolation of the second electrode, such as the cathode material, at the location of the isolation opening 42, thereby eliminating the need for a mask structure and simplifying the vapor deposition process.

[0150] For example, since the etching selectivity ratios of the materials of the third sublayer 41c and the second sublayer 41b are different, the etching rates of the materials of the third sublayer 41c and the second sublayer 41b in the same etching solution are different. By controlling the etching time, a morphology in which the third sublayer 41c protrudes relative to the second sublayer 41b toward the isolation opening 42 can be formed.

[0151] A further detailed description of the method for manufacturing the display panel 100 will be provided in the specific embodiments of the method for manufacturing the display panel 100 provided in the second aspect of this application.

[0152] Please continue reading. Figure 4 In some alternative embodiments, the first sublayer 41a is disposed to protrude toward the isolation opening 42 relative to the second sublayer 41b.

[0153] In these alternative embodiments, the positioning of the first sublayer 41a and the second sublayer 41b further facilitates the isolation of the second electrode, such as the cathode material, at the location of the isolation opening 42, thereby eliminating the need for a mask structure and simplifying the vapor deposition process.

[0154] For example, since the etching selectivity ratios of the materials of the first sublayer 41a and the second sublayer 41b are different, the etching rates of the materials of the first sublayer 41a and the second sublayer 41b in the same etching solution are different. By controlling the etching time, a morphology in which the first sublayer 41a protrudes relative to the second sublayer 41b toward the isolation opening 42 can be formed.

[0155] A further detailed description of the method for manufacturing the display panel 100 will be provided in the specific embodiments of the method for manufacturing the display panel 100 provided in the second aspect of this application.

[0156] Please continue reading. Figure 4 In some embodiments, the thickness of the portion of the first sublayer 41a that protrudes toward the isolation opening 42 relative to the second sublayer 41b is smaller than the thickness of the other portion of the first sublayer 41a that overlaps with the second sublayer 41b.

[0157] In these embodiments, the difference in thickness effectively reduces the risk of damage to the portion of the first sublayer 41a that protrudes toward the isolation opening 42 relative to the second sublayer 41b when the first sublayer 41a at the location of the isolation opening 42 is etched away separately.

[0158] When etching the isolation opening 42 region, the thinner protrusion can reduce the risk of material residue or structural damage due to over-etching or lateral etching, thereby improving etching accuracy and uniformity.

[0159] Meanwhile, the first sublayer 41a of the thicker overlapping portion retains sufficient electrical conductivity and mechanical strength.

[0160] Please continue reading. Figure 4 In some alternative embodiments, the thickness of the portion of the first sublayer 41a that protrudes toward the isolation opening 42 relative to the second sublayer 41b is smaller than the thickness of the shielding portion 44.

[0161] In these alternative embodiments, the difference in thickness effectively reduces the risk of damage to the shield 44 when the shield 44 is formed at the location of the light-transmitting opening 43.

[0162] When etching the shielding portion 44 to form the light-transmitting opening 43 region, the thicker shielding portion 44 retains sufficient conductivity and mechanical strength to ensure that the signal shielding performance of the shielding portion 44 in the light-transmitting opening 43 region is not affected.

[0163] Please see Figure 3 In some embodiments, the thickness of the portion of the first electrode 21 that overlaps with the pixel opening 32 is the same as the thickness of the other portion of the first electrode 21 that overlaps with the pixel definition portion 31.

[0164] In these embodiments, selective etching of the first sublayer 41a ensures that the first electrode 21 is not damaged by etching, reducing the risk of material residue or structural damage caused by over-etching or lateral etching, thereby improving etching accuracy and uniformity.

[0165] Figure 5 A flowchart illustrating a method for manufacturing a display panel according to a second aspect embodiment of this application is shown.

[0166] Please see Figure 5 Secondly, embodiments of this application provide a method for manufacturing a display panel, comprising:

[0167] Step S10: A first electrode layer is prepared on one side of the array substrate. The first electrode layer includes at least one first electrode.

[0168] Step S20: Prepare a pixel definition material layer on the side of the first electrode layer away from the array substrate;

[0169] Step S30: An isolation structure is prepared on the side of the pixel definition material layer away from the first electrode layer. The isolation structure includes a shielding portion, an isolation portion, and an isolation opening and a light-transmitting opening formed by at least a portion of the isolation portion. The orthogonal projection of the isolation opening on the array substrate overlaps at least partially with the first electrode. The isolation portion includes a first sub-layer and a second sub-layer formed sequentially in the direction away from the array substrate. At least a portion of the first sub-layer is retained at the position of the light-transmitting opening and forms a shielding portion. The orthogonal projection of the shielding portion on the array substrate overlaps at least partially with the orthogonal projection of the light-transmitting opening on the array substrate.

[0170] Step S40: A touch unit is prepared on the side of the isolation structure away from the pixel definition material layer to form a touch layer, wherein the orthographic projection of the touch unit on the array substrate and the orthographic projection of the shield on the array substrate overlap at least partially.

[0171] The method for manufacturing a display panel provided in the second aspect of this application further improves production efficiency and product performance by optimizing process steps and structural design, and is suitable for the mass production of high-precision display panels.

[0172] In step S30, the first sublayer and the second sublayer are prepared sequentially, and the first sublayer at the light-transmitting opening is selectively retained as a shielding part. This simultaneously achieves the precise retention of the shielding layer and the etching of the isolation opening, eliminating the need for an additional masking step, simplifying the process and reducing costs.

[0173] The design of overlapping shielding and light-transmitting opening projection, combined with the transparent conductive properties of the first sub-layer, effectively blocks the parasitic capacitance between the touch layer and the first electrode layer while ensuring the light transmission requirements of the under-screen sensor, thus reducing radio frequency interference.

[0174] The integration of the touch layer into the isolation structure further ensures the stability of signal transmission.

[0175] Figure 6 A flowchart illustrating another method for preparing a display panel according to an embodiment of the second aspect of this application is shown.

[0176] Please see Figure 6 In some embodiments, step S30 further includes:

[0177] Step S31: Deposit an isolation structure material layer on the side of the pixel definition material layer that faces away from the array substrate;

[0178] Step S32: Deposit a first photoresist material layer on the side of the isolation structure material layer facing away from the array substrate;

[0179] Step S33: Pattern the first photoresist material layer using a first halftone mask to obtain a first photoresist layer, so as to form a first via in the first region and a groove in the second region;

[0180] Step S34: Pattern the isolation material layer using the first photoresist layer to obtain an isolation structure, thereby forming an isolation opening in the first region and a light-transmitting opening in the second region, with at least a portion of the shielding portion exposed through the light-transmitting opening.

[0181] In these embodiments, the process efficiency and structural precision of display panel fabrication are further improved by introducing halftone masking and regional patterning.

[0182] Step S33 uses a first halftone mask to pattern the first photoresist material layer, simultaneously forming a first via corresponding to the isolation opening in the first region and a groove corresponding to the light-transmitting opening and the shielding part in the second region.

[0183] Two different structures can be precisely defined in a single photolithography step, reducing the number of times masks are used and lowering production costs.

[0184] The transmittance gradient design of the first halftone mask creates a thickness difference in the photoresist after exposure. The photoresist in the first region is completely removed to form the first via, exposing the isolation material layer for etching. The photoresist in the second region is partially retained to form a groove to control the etching depth. This allows the first sub-layer to be retained at the light-transmitting opening as a shielding part, satisfying the light transmission requirements of the sensor while blocking the parasitic capacitance between the touch and display signals through the conductive shielding layer.

[0185] In addition, the setting of the first and second regions optimizes the structural adaptability by processing the regions separately, the isolation opening ensures the display performance, and the light-transmitting opening integrates the shielding function, avoiding interlayer misalignment or damage caused by multi-step etching in traditional processes, thereby improving yield and product consistency.

[0186] Figure 7 A flowchart illustrating another method for manufacturing a display panel according to an embodiment of the second aspect of this application is shown. Figures 8a to 8d The process steps of another method for manufacturing a display panel provided in the second aspect embodiment of this application are shown.

[0187] Please see Figure 7 and Figures 8a to 8d In some optional embodiments, step S34 further includes:

[0188] Step S341: Etch the portion of the isolation structure material layer 40' exposed through the first via 61 to form an isolation pre-opening 42';

[0189] Step S342: Thin the first photoresist layer 60, remove the first photoresist layer 60 in the groove 621 at the second region 60b and form the second via 622;

[0190] Step S343: Etch the portion of the isolation structure material layer 40' exposed through the second via 622 to form an isolation opening 42 and a light-transmitting opening 43, thereby obtaining the isolation structure 40.

[0191] Step S344: Remove the first photoresist layer 60.

[0192] In these alternative embodiments, the fabrication accuracy and reliability of the isolation structure 40 are significantly improved by using a staged etching and photoresist dynamic adjustment process.

[0193] In step S341, the isolation pre-opening 42' is formed by etching the isolation structure material layer 40' exposed by the first via 61, which initially defines the outline of the isolation opening 42 and reduces the load difference in subsequent etching.

[0194] In step S342, a second via 622 is formed by thinning the first photoresist layer 60 and removing the photoresist in the groove 621 of the second region 60b. The etching range of different regions is precisely controlled by the photoresist thickness gradient, so as to avoid damage to the shielding part 44 in the light-transmitting opening 43 by the first etching in step S341.

[0195] In step S343, the isolation structure material layer 40' is etched a second time based on the second via 622 to simultaneously form the isolation opening 42 and the light-transmitting opening 43, and the first sub-layer at the light-transmitting opening 43 is retained as the shielding part 44. Multi-region differential etching is achieved through a single photoresist layer to ensure that the conductive shielding function and light transmittance of the shielding part 44 are optimized in synergy.

[0196] In step S344, the residual first photoresist layer 60 is completely removed to avoid interface contamination or electrical abnormalities caused by the residue.

[0197] Figure 9 A flowchart illustrating another method for manufacturing a display panel according to an embodiment of the second aspect of this application is shown. Figures 10a to 10b The process steps of another method for manufacturing a display panel provided in the second aspect embodiment of this application are shown.

[0198] Please see Figure 9 and Figures 10a to 10b In some embodiments, the isolation structure material layer 40' includes a first sub-material layer 41a' and a second sub-material layer 41b', and step S341 further includes:

[0199] Step S3411: Dry etching is used to etch a portion of the second sub-material layer 41b' at the location of the first via 61 to form an isolation pre-opening 42';

[0200] Step S3412: Wet etching is used to etch a portion of the second sub-material layer 41b' at the location of the first via 61.

[0201] In these embodiments, the morphology control and material compatibility of the isolation structure 40 are optimized through a combined dry and wet etching process.

[0202] In step S3411, dry etching is used to perform high-precision etching on the first sub-material layer 41a' and the second sub-material layer 41b' at the location of the first via 61 to form the initial outline of the isolation pre-opening 42', ensuring the accuracy of the structure positioning.

[0203] Step S3412 employs wet etching for further precise etching to form the desired morphology. Wet etching can precisely control the etching boundary and reduce excessive damage to the first sub-material layer 41a'.

[0204] Figure 11 A flowchart illustrating another method for manufacturing a display panel according to an embodiment of the second aspect of this application is shown. Figures 12a to 12c The process steps of another method for manufacturing a display panel provided in the second aspect embodiment of this application are shown.

[0205] Please see Figure 11 and Figures 12a to 12c In some optional embodiments, step S343 further includes:

[0206] Step S3431: Dry etching is used to etch a portion of the second sub-material layer 41b' at the location of the second via 622, while retaining a portion of the second sub-material layer 41b';

[0207] Step S3432: Wet etching is used to form the first sub-material layer 41a' at the location of the first via 61 to form the isolation opening 42;

[0208] Step S3433: Use developer to etch the remaining portion of the second sub-material layer 41b' at the location of the second via 622 to form a light-transmitting opening 43. The shielding portion 44 located at the light-transmitting opening 43 is exposed through the light-transmitting opening 43.

[0209] In these alternative embodiments, through step-by-step etching and precise control of material selectivity, high-precision forming of the isolation opening 42 and the light-transmitting opening 43 and reliable retention of the shielding part 44 are achieved.

[0210] In step S3431, dry etching is used to precisely etch the second sub-material layer 41b', retaining a portion of the second sub-material layer 41b' to provide structural protection for the portion of the first sub-material layer 41a' that serves as the shielding part 44, thereby avoiding excessive etching of the first sub-material layer 41a' at the location of the second via 622.

[0211] In step S3432, the first sub-material layer 41a' at the location of the first via 61 is wet-etched to remove only the target material, forming the final morphology of the isolation opening 42. At the same time, the remaining portion of the second sub-material layer 41b' protects the shielding portion 44 at the location of the second via 622 from damage.

[0212] In step S3433, the remaining second sub-material layer 41b' at the location of the second via 622 is etched with developer to completely expose the shielding part 44 in the area of ​​the light-transmitting opening 43, ensuring its conductive shielding function and light transmittance.

[0213] In some optional embodiments, step S3432 further includes:

[0214] The first sub-material layer 41a' at the location of the first via 61 is etched using a composite solution containing oxalic acid.

[0215] In these alternative embodiments, the oxalic acid solution can selectively etch the first sub-material layer 41a' at the location of the first via 61, while the first sub-material layer 41a' at the location of the second via 622 is protected from etching damage by the remaining portion of the second sub-material layer 41b'.

[0216] Please continue reading. Figure 11 and Figures 12a to 12c In some optional embodiments, the isolation structure material layer 40' further includes a third sub-material layer 41c', and step S3412 further includes:

[0217] A portion of the third sub-material layer 41c' at the location of the first via 61 is etched using a wet etching method. The etching selectivity of the second sub-material layer 41b' is higher than that of the third sub-material layer 41c'. The third sub-material layer 41c' protrudes relative to the second sub-material layer 41b' toward the isolation pre-opening 42'.

[0218] In these alternative embodiments, the third sub-material layer 41c' and the second sub-material layer 41b' combine the high selectivity characteristics of wet etching. The etching rate of the second sub-material layer 41b' is significantly higher than that of the third sub-material layer 41c', selectively removing a portion of the second sub-material layer 41b', causing the third sub-material layer 41c' to protrude relative to the second sub-material layer 41b' toward the isolation pre-opening 42', forming an inverted T-shaped isolation structure 40. The design of the inverted T-shaped morphology further enhances the isolation effect of the isolation structure 40.

[0219] Figure 13 A flowchart illustrating another method for manufacturing a display panel according to an embodiment of the second aspect of this application is shown. Figures 14a to 14cThe process steps of another method for manufacturing a display panel provided in the second aspect embodiment of this application are shown.

[0220] Please see Figure 13 and Figures 14a to 14b In some embodiments, step S33 further includes:

[0221] Step S331: A first halftone mask 70 is set on the side of the first photoresist material layer 60' away from the isolation structure material layer 40'. The first halftone mask 70 includes a light-transmitting area 71 and a half-light-transmitting area 72. The light-transmitting area 71 is set at the location where the isolation opening 42 is prepared, and the half-light-transmitting area 72 is set at the location where the light-transmitting opening 43 is prepared.

[0222] Step S332: Illuminate the side of the first halftone mask 70 away from the photoresist layer;

[0223] Step S333: The areas corresponding to the semi-transparent area 72 and the transparent area 71 of the photoresist layer are developed using a developing solution. The transparent area 71 of the photoresist layer forms a first via 61 in the first region 60a, and the semi-transparent area 72 of the photoresist layer forms a groove 621 in the second region 60b.

[0224] In these embodiments, a first halftone mask 70 is used to expose and develop the first photoresist material layer 60' in different regions to create structures with different thicknesses and morphologies, such as the first via 61 and the groove 621.

[0225] In some alternative embodiments, the developer includes tetramethylammonium hydroxide.

[0226] In these alternative embodiments, tetramethylammonium hydroxide (TMAH) can be used as an etching solution for metal material layers, as well as as a developer for positive photoresists.

[0227] In some optional embodiments, step 342 further includes:

[0228] The first photoresist layer 60 is ashed.

[0229] In these alternative embodiments, the ashing process, through precise control of the chemical reaction in the plasma, transforms the groove 621 of the second region 60b of the first photoresist layer 60 into the second via 622 while thinning the photoresist, laying the foundation for the subsequent fabrication of the light-transmitting opening 43 and the shielding portion 44.

[0230] Figure 15 A flowchart illustrating another method for manufacturing a display panel according to an embodiment of the second aspect of this application is shown. Figures 16a to 16d The process steps of another method for manufacturing a display panel provided in the second aspect embodiment of this application are shown.

[0231] Please see Figure 15 and Figures 16a to 16d In some embodiments, step S20 includes:

[0232] Step S21: Prepare a pixel definition material layer 30' on the side of the first electrode layer 20 away from the array substrate 10;

[0233] Step S22: Deposit a second photoresist material layer 80' on the side of the pixel definition material layer 30' facing away from the array substrate 10;

[0234] Step S23: The second photoresist material layer 80' is patterned using a second halftone mask to obtain the second photoresist layer 80, so as to form a third via 81 in the third region 80a and a fourth via 82 in the fourth region 80b. The third region 80a is located in the display area AA and the fourth region 80b is located in the non-display area NA.

[0235] Step S24: The pixel definition material layer 30' is patterned using the second photoresist layer 80 to form a pixel opening 32 in the third region 80a and a connection opening 33 in the fourth region 80b.

[0236] In these embodiments, the second halftone mask is used to combine the etching steps in the display area AA and the etching steps in the non-display area NA of the pixel definition layer 30, respectively, to further simplify the process.

[0237] Figure 17 A flowchart illustrating another method for manufacturing a display panel according to an embodiment of the second aspect of this application is shown. Figures 18a to 18e The process steps of another method for manufacturing a display panel provided in the second aspect embodiment of this application are shown.

[0238] Please see Figure 17 and Figures 18a to 18e In some optional embodiments, step S20 may only include:

[0239] Step S21: Prepare a pixel definition material layer 30' on the side of the first electrode layer 20 away from the array substrate 10;

[0240] The following steps, S30 and S30, also include:

[0241] Step S22: Deposit a second photoresist material layer 80' on the side of the pixel definition material layer 30' facing away from the array substrate 10;

[0242] Step S23: The second photoresist material layer 80' is patterned using a second halftone mask to obtain the second photoresist layer 80, so as to form a third via 81 in the third region 80a and a fourth via 82 in the fourth region 80b. The third region 80a is located in the display area AA and the fourth region 80b is located in the non-display area NA.

[0243] Step S24: The pixel definition material layer 30' is patterned using the second photoresist layer 80 to form a pixel opening 32 in the third region 80a and a connection opening 33 in the fourth region 80b.

[0244] In these alternative embodiments, the etching step of the pixel definition material layer 30' can be performed after the isolation structure 40 is fabricated. The isolation structure 40 at the isolation opening 42 can isolate the second photoresist material layer 80' on its own without the need for an additional etching step, further simplifying the process.

[0245] The display device provided in the third aspect of this application may include the display panel provided in any of the first aspect embodiments above, or the display panel prepared by the preparation method of the display panel provided in any of the second aspect embodiments of this application.

[0246] Since the display device provided in the third aspect embodiment of this application includes the display panel provided in any of the first aspect embodiments or the display panel prepared by the preparation method of the display panel provided in any of the second aspect embodiments of this application, the display device provided in the third aspect embodiment of this application has the beneficial effects of the display panel provided in any of the first aspect embodiments or the preparation method of the display panel provided in any of the second aspect embodiments of this application, which will not be repeated here.

[0247] The display devices in the third aspect of this application include, but are not limited to, mobile phones, personal digital assistants (PDAs), tablet computers, e-books, televisions, access control systems, smart landline phones, control consoles, and other devices with display functions.

[0248] While the embodiments disclosed in this application are as described above, the content is merely for the purpose of facilitating understanding of this application and is not intended to limit the invention. Any person skilled in the art to which this application pertains may make any modifications and changes in form and detail of the implementation without departing from the spirit and scope disclosed in this application; however, the scope of protection of this application shall still be determined by the scope defined in the appended claims.

[0249] The above description is merely a specific embodiment of this application. Those skilled in the art will clearly understand that, for the sake of convenience and brevity, substitutions for other connection methods described above can be made by referring to the corresponding processes in the foregoing method embodiments, and will not be repeated here. It should be understood that the scope of protection of this application is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this application, and these modifications or substitutions should all be covered within the scope of protection of this application.

Claims

1. A display panel, characterized in that, include: Array substrate; A first electrode layer is located on one side of the array substrate, and the first electrode layer includes at least one first electrode; A pixel definition layer is located on the side of the first electrode layer away from the array substrate, and includes a pixel definition portion and a pixel opening formed by the pixel definition portion. The orthogonal projection of the pixel opening on the array substrate at least partially overlaps with the first electrode. An isolation structure is located on the side of the pixel definition layer away from the first electrode layer, and includes an isolation portion and an isolation opening and a light-transmitting opening formed by the isolation portion. The isolation portion includes a first sub-layer and a second sub-layer stacked in a direction away from the array substrate. The isolation opening at least partially overlaps with the pixel opening. A shielding portion is located on the side of the pixel definition layer away from the first electrode layer. The shielding portion is disposed on the same layer as the first sub-layer, and the orthographic projection of the shielding portion on the array substrate at least partially overlaps with the orthographic projection of the light-transmitting opening on the array substrate. A touch layer is located on the side of the isolation structure away from the pixel definition layer. The touch layer includes a plurality of touch units, and the orthographic projection of the touch units on the array substrate at least partially overlaps with the orthographic projection of the shielding portion on the array substrate.

2. The display panel according to claim 1, characterized in that, The materials used to fabricate the first sublayer and the shielding portion include light-transmitting and conductive materials; Preferably, the first sublayer and the shielding portion are made of indium zinc oxide. Preferably, the first sublayer and the shielding portion are made of indium tin oxide.

3. The display panel according to claim 1 or 2, characterized in that, The isolation structure further includes a third sub-layer, which is disposed on the side of the second sub-layer away from the array substrate, and the third sub-layer protrudes toward the isolation opening relative to the second sub-layer; Preferably, the first sub-layer protrudes toward the isolation opening relative to the second sub-layer.

4. The display panel according to claim 3, characterized in that, The thickness of the first sublayer protruding towards the isolation opening relative to the second sublayer is smaller than the thickness of the other portion of the first sublayer overlapping with the second sublayer; Preferably, the thickness of the first sublayer protruding toward the isolation opening relative to the second sublayer is smaller than the thickness of the shielding portion.

5. The display panel according to claim 1, characterized in that, The thickness of the portion of the first electrode that overlaps with the pixel opening is the same as the thickness of the other portion of the first electrode that overlaps with the pixel definition portion.

6. A method for manufacturing a display panel, characterized in that, include: A first electrode layer is fabricated on one side of the array substrate, the first electrode layer including at least one first electrode; A pixel definition material layer is prepared on the side of the first electrode layer away from the array substrate; An isolation structure is prepared on the side of the pixel definition material layer away from the first electrode layer. The isolation structure includes a shielding portion, an isolation portion, and an isolation opening and a light-transmitting opening formed by at least a portion of the isolation portion. The orthogonal projection of the isolation opening on the array substrate at least partially overlaps with the first electrode. The isolation portion includes a first sub-layer and a second sub-layer sequentially prepared in a direction away from the array substrate. At least a portion of the first sub-layer is retained at the position of the light-transmitting opening and forms a shielding portion. The orthogonal projection of the shielding portion on the array substrate at least partially overlaps with the orthogonal projection of the light-transmitting opening on the array substrate. A touch layer is formed by fabricating a touch unit on the side of the isolation structure away from the pixel definition material layer, and the orthographic projection of the touch unit on the array substrate at least partially overlaps with the orthographic projection of the shielding portion on the array substrate.

7. The method for manufacturing a display panel according to claim 6, characterized in that, The step of fabricating the isolation structure on the side of the pixel-defining material layer away from the first electrode layer further includes: An isolation structure material layer is provided on the side of the pixel definition material layer facing away from the array substrate; A first photoresist material layer is disposed on the side of the isolation structure material layer facing away from the array substrate; The first photoresist material layer is patterned using a first halftone mask to obtain a first photoresist layer, so as to form a first via in a first region and a groove in a second region; The isolation structure is obtained by patterning the isolation structure material layer using the first photoresist layer, so as to form the isolation opening in the first region and the light-transmitting opening in the second region, with at least a portion of the shielding portion exposed in the light-transmitting opening; Preferably, the step of patterning the isolation structure material layer using the first photoresist layer further includes: Etch the portion of the isolation structure material layer exposed by the first via to form an isolation pre-opening; The first photoresist layer is thinned, and the first photoresist layer in the groove in the second region is removed to form a second via. The portion of the isolation structure material layer exposed by the second via is etched to form the isolation opening and the light-transmitting opening, thus obtaining the isolation structure; Remove the first photoresist layer.

8. The method for manufacturing a display panel according to claim 7, characterized in that, The isolation structure material layer includes a first sub-material layer and a second sub-material layer, and the step of etching the portion of the isolation structure material layer exposed by the first via and forming the isolation opening further includes: A portion of the second sub-material layer at the location of the first via is dry-etched to form the isolation pre-opening; A portion of the second sub-material layer at the location of the first via is etched using a wet etching process. Preferably, the step of etching the portion of the isolation structure material layer exposed by the second via and forming a light-transmitting opening further includes: A portion of the second sub-material layer at the location of the second via is etched using a dry etching method, while retaining a portion of the second sub-material layer; The first sub-material layer at the location of the first via is formed by wet etching; The remaining portion of the second sub-material layer at the location of the second via is etched with a developer to form the light-transmitting opening, and the shielding portion located at the location of the light-transmitting opening is exposed through the light-transmitting opening. Preferably, the step of wet etching the first sub-material layer at the location of the first via further includes: The first sub-material layer at the first via location is etched using a composite solution containing oxalic acid. Preferably, the isolation structure material layer further includes a third sub-material layer, and the step of wet etching a portion of the second sub-material layer at the location of the first via further includes: A portion of the third sub-material layer at the location of the first via is etched using a wet etching process. The etching selectivity of the second sub-material layer is higher than that of the third sub-material layer. The third sub-material layer protrudes relative to the second sub-material layer toward the isolation pre-opening.

9. The method for manufacturing a display panel according to claim 8, characterized in that, The step of patterning the first photoresist material layer using a first halftone mask to obtain the first photoresist layer further includes: A first halftone mask is disposed on the side of the first photoresist material layer away from the isolation structure material layer. The first halftone mask includes a light-transmitting area and a semi-light-transmitting area. The light-transmitting area is disposed corresponding to the location where the isolation opening is prepared, and the semi-light-transmitting area is disposed corresponding to the location where the light-transmitting opening is prepared. Illuminate the side of the first halftone mask away from the photoresist layer; The photoresist layer is developed using the developing solution in the areas corresponding to the semi-transparent area and the transparent area. The photoresist layer forms the first via in the first area corresponding to the transparent area, and the photoresist layer forms the groove in the second area corresponding to the semi-transparent area. Preferably, the developing solution comprises tetramethylammonium hydroxide; Preferably, the step of thinning the photoresist layer further includes: performing an ashing treatment on the first photoresist layer.

10. The method for manufacturing a display panel according to claim 6, characterized in that, The array substrate includes a display area and a non-display area surrounding the display area, and the step of fabricating a pixel definition layer on the side of the first electrode layer away from the array substrate further includes: A pixel definition material layer is prepared on the side of the first electrode layer away from the array substrate; A second photoresist material layer is disposed on the side of the pixel definition material layer opposite to the array substrate; A second photoresist layer is obtained by patterning the second photoresist material layer using a second halftone mask, so as to form a third via in a third region and a fourth via in a fourth region. The third region is located in the display area and the fourth region is located in the non-display area. The pixel definition material layer is patterned using the second photoresist layer to form a pixel opening in the third region and a connection opening in the fourth region. Preferably, the step of fabricating the pixel definition layer on the side of the first electrode layer away from the array substrate includes: A pixel definition material layer is prepared on the side of the first electrode layer away from the array substrate; Following the step of fabricating the isolation structure on the side of the pixel-defining material layer away from the first electrode layer, the method further includes: A second photoresist material layer is disposed on the side of the pixel definition material layer opposite to the array substrate; The second photoresist material layer is patterned using the second halftone mask to obtain the second photoresist layer, thereby forming the third via in the third region and the fourth via in the fourth region. The third region is located in the display area and the fourth region is located in the non-display area. The pixel definition material layer is patterned using the second photoresist layer to form the pixel opening in the third region and the connection opening in the fourth region.

11. A display device, characterized in that, It includes the display panel according to any one of claims 1 to 5, or the display panel formed by the method for preparing the display panel according to any one of claims 6 to 10.

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