Organic light emitting display device
Patent Information
- Application Number
- CN202610576580.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2025-04-29
- Filing Date
- 2026-04-28
- Publication Date
- 2026-10-30
AI Technical Summary
[0006]OLED的发光效率和寿命受到限制
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Figure CN123021987A_ABST
Abstract
Description
[0001] Cross-references to related applications
[0002] This application claims priority to Korean Patent Application No. 10-2025-0056553, filed in Korea on April 29, 2025, the entire contents of which are incorporated herein by reference. Technical Field
[0003] This disclosure relates to a display device, and more specifically, to an organic light-emitting display device that provides suitable low grayscale capacitance, high luminous efficiency, and long lifespan. Background Technology
[0004] With the development of large-area display devices, the demand for flat panel display devices with small footprints is increasing. As a type of flat panel display device, liquid crystal (LC) display devices, organic light-emitting display devices, and inorganic light-emitting display devices are rapidly developing technologies.
[0005] For example, organic light-emitting display devices include organic light-emitting diodes (OLEDs). In an OLED, holes from the anode and electrons from the cathode combine to generate excitons in the organic light-emitting layer, and the excitons transition from an excited state to a ground state. As a result, light is emitted from the OLED.
[0006] The luminous efficiency and lifespan of OLEDs are limited. In particular, there are significant limitations in both luminous efficiency and lifespan in blue light emission. Summary of the Invention
[0007] This disclosure relates to an organic light-emitting display device that substantially eliminates one or more problems associated with the limitations and disadvantages of the relevant prior art.
[0008] The purpose of this disclosure is to provide an organic light-emitting display device that offers suitable low grayscale capacitance, high luminous efficiency, and long lifespan.
[0009] Additional features and advantages of this disclosure are set forth in the following description, and will be apparent from the description, or from practice of this disclosure. The purposes and other advantages of this disclosure are realized and obtained through the features described herein and in the accompanying drawings.
[0010] To achieve these and other advantages according to the embodiments of this disclosure, as described herein, one aspect of this disclosure is an organic light-emitting display device, comprising: a substrate including a blue pixel region and a green pixel region; a first electrode disposed on the substrate and corresponding to each of the blue pixel region and the green pixel region; a first hole transport layer disposed on the first electrode and corresponding to each of the blue pixel region and the green pixel region; a first blue light-emitting material layer disposed on the first hole transport layer and corresponding to the blue pixel region; a first green light-emitting material layer disposed on the first hole transport layer and corresponding to the green pixel region; a charge generation layer disposed on the first blue light-emitting material layer and the first green light-emitting material layer and corresponding to each of the blue pixel region and the green pixel region; a second hole transport layer disposed on the charge generation layer and corresponding to each of the blue pixel region and the green pixel region; and a first hole auxiliary layer. A hole-assist layer is located on the second hole transport layer and corresponds to each of the blue pixel region and the green pixel region; a second blue luminescent material layer is disposed on the first hole-assist layer and corresponds to the blue pixel region; a second green luminescent material layer is disposed on the first hole-assist layer and corresponds to the green pixel region; and a second electrode is disposed on the second blue luminescent material layer and the second green luminescent material layer and corresponds to each of the blue pixel region and the green pixel region, wherein each of the first blue luminescent material layer and the second blue luminescent material layer includes a first blue luminescent layer, a second blue luminescent layer located on the first blue luminescent layer, and a third blue luminescent layer located on the second blue luminescent layer, wherein the first blue luminescent layer in the second blue luminescent material layer includes a blue body and a blue dopant, wherein the triplet energy of the material of the first hole-assist layer is greater than the triplet energy of the blue dopant, and wherein the HOMO energy level of the material of the first hole-assist layer is lower than the HOMO energy level of the material of the second hole transport layer.
[0011] It should be understood that both the foregoing general description and the following detailed description are exemplary and illustrative, and are intended to further explain the claimed contents of this disclosure. Attached Figure Description
[0012] The accompanying drawings, which are included to provide a further understanding of the disclosure and are incorporated in and form part of this specification, illustrate embodiments of the disclosure and, together with the description, serve to illustrate the principles of the disclosure.
[0013] Figure 1 This is a schematic diagram illustrating the organic light-emitting display device disclosed herein.
[0014] Figure 2 This is a schematic circuit diagram of the organic light-emitting display device disclosed herein.
[0015] Figure 3 This is a schematic cross-sectional view of a pixel region of an organic light-emitting display device according to a first embodiment of the present disclosure.
[0016] Figure 4 This is a schematic cross-sectional view of an organic light-emitting display device according to a first embodiment of the present disclosure.
[0017] Figure 5 This is a schematic cross-sectional view of an OLED for an organic light-emitting display device according to a first embodiment of the present disclosure.
[0018] Figure 6 This is a schematic cross-sectional view of an organic light-emitting display device according to a second embodiment of the present disclosure. Detailed Implementation
[0019] Reference will now be made in detail to various aspects of this disclosure, examples of which are illustrated in the accompanying drawings. In the following description, detailed descriptions of well-known functions or configurations relevant to this text will be omitted where unnecessarily obscuring the essential points of the inventive concept. The order of the described processing steps and / or operations is exemplary; however, the order of steps and / or operations is not limited to the order set forth herein and may be varied as is known in the art, except for steps and / or operations that must occur in a particular order. Similar reference numerals always denote similar elements. The names of the various elements used in the following explanation are chosen solely for ease of writing and may therefore differ from those used in actual products.
[0020] The advantages and features of this disclosure, as well as methods for achieving these advantages and features, will become apparent from the aspects described in detail below with reference to the accompanying drawings. However, this disclosure is not limited to the aspects disclosed below, but can be implemented in various different forms, and only these aspects allow for the completion of this disclosure. This disclosure is provided to fully inform those skilled in the art of this disclosure of its scope.
[0021] The shapes, dimensions, scales, angles, quantities, etc., disclosed in the accompanying drawings, which are used to explain various aspects of this disclosure, are illustrative, and this disclosure is not limited to the matters shown. Throughout the specification, the same reference numerals denote the same elements. Furthermore, in describing this disclosure, a detailed description of the relevant known art may be omitted if it is determined that such a detailed description unnecessarily obscures the subject matter of this disclosure. When terms such as "comprising," "having," or "comprising" are used in this specification, other components may be added unless "only" is used. When components are referred to in the singular, the plural is included unless a specific statement is described.
[0022] The expression "at least one of a, b, and c" described throughout the specification may encompass "only a", "only b", "only c", "a and b", "a and c", "b and c", or "all of a, b, and c". The advantages and features of this disclosure, as well as the methods for achieving these advantages and features, will become apparent from the following detailed description of the embodiments and the accompanying drawings.
[0023] When interpreting a component, even if the error or tolerance range is not explicitly described, the component is interpreted as including such an error or tolerance range.
[0024] When describing positional relationships, for example, when the positional relationship between two components is described as such as “above,” “over,” “below,” and “immediately following,” one or more other components may be positioned between the two components unless more restrictive terms such as “only” or “directly” are used.
[0025] When describing temporal relationships, such as when time sequence is described as "after", "following", "next" and "before", discontinuous situations may be included unless more restrictive terms such as "only", "immediately" or "directly" are used.
[0026] For ease of illustration, the area, length, or thickness of each component described in the specification is shown, and this disclosure is not necessarily limited to the area and thickness of the components shown.
[0027] It should be understood that although the terms “first,” “second,” etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used only to distinguish one element from another. For example, without departing from the scope of this disclosure, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element.
[0028] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which the exemplary embodiments pertain. It should also be understood that, unless expressly defined herein, terms such as those defined in a general dictionary shall be interpreted as having a meaning consistent with, for example, their meaning in the context of the relevant field, and shall not be interpreted in an idealized or overly formal sense. For example, the terms “component” or “unit” may be applied to, for example, a single circuit or structure, an integrated circuit, a computational block of a circuit device, or any structure configured to perform the functions described as would be understood by one of ordinary skill in the art.
[0029] Instead, these embodiments may be provided to make this disclosure sufficiently thorough and complete to assist those skilled in the art in fully understanding its scope. Furthermore, this disclosure is limited only by the scope of the claims.
[0030] As will be fully understood by those skilled in the art, the features of the various aspects of this disclosure may be coupled or combined with each other in part or in whole, and may operate differently from each other and be technically driven. The various aspects of this disclosure may be implemented independently of each other or may be implemented together in an interdependent relationship.
[0031] Unless otherwise specified, the transistors constituting the pixel circuits of this disclosure may include at least one of oxide thin-film transistors (Oxide TFTs), amorphous silicon TFTs (a-Si TFTs), and low-temperature polycrystalline silicon (LTPS) TFTs.
[0032] Reference will now be made in detail to some examples and preferred embodiments shown in the accompanying drawings.
[0033] Figure 1 This is a schematic diagram illustrating the organic light-emitting display device of the present disclosure, and Figure 2 This is a schematic circuit diagram of the organic light-emitting display device disclosed herein.
[0034] like Figure 1 and Figure 2 As shown, an organic light-emitting display device according to an embodiment of the present disclosure includes a timing control unit 120 (e.g., a circuit), a data driving unit 122 (e.g., a circuit), a first gate driving unit 124 (e.g., a circuit), a second gate driving unit 126 (e.g., a circuit), and a display panel 128.
[0035] The timing control unit 120 uses image signals transmitted from an external system and multiple timing signals to generate image data RGB, data control signals, and gate control signals. The multiple timing signals include a data enable signal, a horizontal synchronization signal, a vertical synchronization signal, and a clock signal. The timing control unit 120 transmits the image data and data control signals to the data driving unit 122, and transmits the gate control signals to the first gate driving unit 124 and the second gate driving unit 126.
[0036] The data drive unit 122 uses the image data and data control signal transmitted from the timing control unit 120 to generate a data signal (data voltage) Vda, and transmits the data signal Vda to the data line DL of the display panel 128.
[0037] The first gate driving unit 124 and the second gate driving unit 126 use the gate control signal transmitted from the timing control unit 120 to generate gate signals (gate voltages) Vsc and Vse, and apply the gate signals Vsc and Vse to the gate line GL of the display panel 128.
[0038] The first gate driving unit 124 and the second gate driving unit 126 may have a gate in panel (GIP) type to be formed in the non-display area NDA of the substrate of the display panel 128 having gate lines GL, data lines DL and pixel areas P.
[0039] Although Figure 1 In one embodiment, the first gate driving unit 124 and the second gate driving unit 126 are disposed in the two side portions of the display panel 128, but in another embodiment, a gate driving unit may be disposed in the one side portion of the display panel 128.
[0040] Display panel 128 includes a display area DA located in its center and a non-display area NDA surrounding the display area DA. Display panel 128 displays images using gate signals Vsc and Vse and a data signal Vda. In display panel 128, multiple gate lines GL and multiple data lines DL intersect each other to define a pixel area P including a first pixel area P1, a second pixel area P2, and a third pixel area P3. For example, the first pixel area P1, the second pixel area P2, and the third pixel area P3 may correspond to blue, green, and red, respectively.
[0041] Each of the first pixel region P1, the second pixel region P2, and the third pixel region P3 may include multiple transistors such as a switching transistor Tsw, a driving transistor Tdr, a sensing transistor Tse, a storage capacitor Cst, and an organic light-emitting diode D.
[0042] Although Figure 2In one embodiment, the switching transistor Tsw, the driving transistor Tdr, and the sensing transistor Tse may be negative, but in another embodiment, at least one of the switching transistor Tsw, the driving transistor Tdr, and the sensing transistor Tse may be positive.
[0043] The switching transistor Tsw is switched via gate line GL according to the scan signal Vsc to transmit the data signal Vda to the first node N1.
[0044] The driving transistor Tdr switches according to the voltage of the first node N1 to transmit the high-level signal (high-level voltage) Vdd to the second node N2.
[0045] The sensing transistor Tse switches according to the sensing signal (sensing voltage) Vse to transmit the reference signal (reference voltage) Vre to the second node N2 or to transmit the voltage of the second node N2 to the reference line.
[0046] The storage capacitor Cst holds the data signal Vda supplied to the first node N1 for one frame and stores the threshold voltage (Vth) of the driving transistor Tdr.
[0047] The first capacitor electrode of the storage capacitor Cst is connected to the first node N1, and the second capacitor electrode of the storage capacitor Cst is connected to the second node N2.
[0048] An organic light-emitting diode (OLED) D emits light with a brightness proportional to the current driving the transistor Tdr.
[0049] The anode of the organic light-emitting diode D is connected to the second node N2, and the cathode of the organic light-emitting diode D is connected to the low-level power supply line to receive the low-level signal (low-level voltage) Vss.
[0050] The organic light-emitting diode D can display an image with brightness corresponding to the image data, based on the driving of the pixel circuits in the first pixel region P1, the second pixel region P2, and the third pixel region P3.
[0051] Figure 3 This is a schematic cross-sectional view of a pixel region of an organic light-emitting display device according to a first embodiment of the present disclosure.
[0052] like Figure 3 As shown, the organic light-emitting display device 200 includes a substrate 202 containing a pixel region P and an OLED D located above the substrate 202.
[0053] The substrate 202 can be a glass substrate or a plastic substrate. For example, the substrate 202 can be one of a polyimide (PI) substrate, a polyethersulfone (PES) substrate, a polyethylene naphthalate (PEN) substrate, a polyethylene terephthalate (PET) substrate, and a polycarbonate (PC) substrate.
[0054] In accordance with this disclosure, the substrate 202 may have a three-layer structure comprising a first polyimide layer, a second polyimide layer, and an interlayer inorganic layer located between the first and second polyimide layers. The interlayer inorganic layer may be formed of an inorganic insulating material, such as silicon oxide or silicon nitride.
[0055] A first light-shielding pattern 204 is disposed on a substrate 202. Light passing through the substrate 202 can be blocked by the first light-shielding pattern 204. For example, the first light-shielding pattern 204 can be formed of a metallic material (e.g., molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), or alloys thereof), and can have a single-layer structure or a multi-layer structure.
[0056] A first buffer layer 206 covering the first light-shielding pattern 204 is disposed on the substrate 202. The first buffer layer 206 can be used to block external moisture and / or oxygen. For example, the first buffer layer 206 can be formed of an inorganic insulating material (e.g., silicon oxide or silicon nitride) and can have a single-layer structure or a multi-layer structure.
[0057] A first semiconductor layer 210 corresponding to the first light-shielding pattern 204 is disposed on the first buffer layer 206. The first semiconductor layer 210 may include one of polycrystalline semiconductor material, amorphous semiconductor material, and oxide semiconductor material. When the first light-shielding pattern 204 and the first buffer layer 206 are omitted, the first semiconductor layer 210 may be directly disposed on the substrate 202.
[0058] In this disclosure, the first semiconductor layer 210 may be formed of a polycrystalline semiconductor material (e.g., polycrystalline silicon). The first semiconductor layer 210 may include a first channel region 210a, a first source region 210b located on one side of the first channel region 210a, and a first drain region 210c located on the other side of the first channel region 210a. Impurities may be doped into the first source region 210b and the first drain region 210c.
[0059] A first gate insulating layer 212 covering the first semiconductor layer 210 is disposed above the first buffer layer 206. For example, the first gate insulating layer 212 may be formed of an inorganic insulating material (e.g., silicon oxide or silicon nitride) and may have a single-layer structure or a multi-layer structure.
[0060] A first gate electrode 214, corresponding to the first channel region 210a of the first semiconductor layer 210, is disposed on the first gate insulating layer 212. Furthermore, a first capacitor electrode 216, spaced apart from the first gate electrode 214, is disposed on the first gate insulating layer 212.
[0061] The first gate electrode 214 and the first capacitor electrode 216 may be disposed in the same layer and formed of the same material. For example, each of the first gate electrode 214 and the first capacitor electrode 216 may be formed of a metallic material (e.g., Mo, Al, Cr, Au, Ti, Ni, Nd, Cu or alloys thereof) and may have a single-layer structure or a multi-layer structure.
[0062] A first interlayer insulating layer 218 covering the first gate electrode 214 and the first capacitor electrode 216 is disposed on the first gate insulating layer 212. For example, the first interlayer insulating layer 218 may be formed of an inorganic insulating material (e.g., silicon oxide or silicon nitride) and may have a single-layer structure or a multilayer structure.
[0063] A second capacitor electrode 230 corresponding to the first capacitor electrode 216 and a second light-shielding pattern 232 spaced apart from the second capacitor electrode 230 are disposed on the first interlayer insulating layer 218.
[0064] The second capacitor electrode 230 and the second light-shielding pattern 232 can be disposed in the same layer and formed of the same material. For example, each of the second capacitor electrode 230 and the second light-shielding pattern 232 can be formed of a metallic material (e.g., Mo, Al, Cr, Au, Ti, Ni, Nd, Cu or alloys thereof) and can have a single-layer structure or a multi-layer structure.
[0065] A second interlayer insulating layer 234 covering the second capacitor electrode 230 and the second light-shielding pattern 232 is disposed on the first interlayer insulating layer 218. The second interlayer insulating layer 234 can be used to block external moisture and / or oxygen. For example, the second interlayer insulating layer 234 can be formed of an inorganic insulating material (e.g., silicon oxide or silicon nitride) or an organic insulating material (e.g., photo-acryl or benzocyclobutene (BCB)), and can have a single-layer structure or a multi-layer structure.
[0066] A second semiconductor layer 236 corresponding to the second light-shielding pattern 232 is disposed on the second interlayer insulating layer 234. The second semiconductor layer 236 may include one of polycrystalline semiconductor material, amorphous semiconductor material, and oxide semiconductor material.
[0067] In this disclosure, the second semiconductor layer 236 may be formed of an oxide semiconductor material, such as indium gallium zinc oxide (IGZO), zinc oxide (ZnO), tin oxide (SnO2), copper oxide (Cu2O), nickel oxide (NiO), indium tin zinc oxide (ITZO), or indium aluminum zinc oxide (IAZO). The second semiconductor layer 236 may include a second channel region 236a, a second source region 236b located on one side of the second channel region 236a, and a second drain region 236c located on the other side of the second channel region 236a. Impurities may be doped into the second source region 236b and the second drain region 236c.
[0068] A second gate insulating layer 238 covering the second semiconductor layer 236 is disposed above the second interlayer insulating layer 234. For example, the second gate insulating layer 238 may be formed of an inorganic insulating material (e.g., silicon oxide or silicon nitride) and may have a single-layer structure or a multilayer structure.
[0069] A second gate electrode 240 corresponding to the second channel region 236a of the second semiconductor layer 236 is disposed on the second gate insulating layer 238. For example, the second gate electrode 240 may be formed of a metallic material (e.g., Mo, Al, Cr, Au, Ti, Ni, Nd, Cu or alloys thereof) and may have a single-layer structure or a multi-layer structure.
[0070] A third interlayer insulating layer 242 covering the second gate electrode 240 is disposed on the second gate insulating layer 238. For example, the third interlayer insulating layer 242 may be formed of an inorganic insulating material (e.g., silicon oxide or silicon nitride) and may have a single-layer structure or a multilayer structure.
[0071] The first source electrode 244a, the first drain electrode 244b, the second source electrode 246a, and the second drain electrode 246b are disposed on the third interlayer insulating layer 242.
[0072] The first source electrode 244a and the first drain electrode 244b are connected to the first source region 210b and the first drain region 210c, respectively, via contact holes passing through the third interlayer insulating layer 242, the second gate insulating layer 238, the second interlayer insulating layer 234, the first interlayer insulating layer 218, and the first gate insulating layer 212. The first source electrode 244a is connected to the first capacitor electrode 216 via a contact hole passing through the third interlayer insulating layer 242, the second gate insulating layer 238, the second interlayer insulating layer 234, and the first interlayer insulating layer 218.
[0073] The second source electrode 246a and the second drain electrode 246b are connected to the second source region 236b and the second drain region 236c, respectively, via contact holes passing through the third interlayer insulating layer 242 and the second gate insulating layer 238. The second source electrode 246a is connected to the second capacitor electrode 230 via contact holes passing through the third interlayer insulating layer 242, the second gate insulating layer 238, and the second interlayer insulating layer 234.
[0074] The first source electrode 244a and the first drain electrode 244b, the second source electrode 246a and the second drain electrode 246b can be disposed in the same layer and formed of the same material. For example, each of the first source electrode 244a and the first drain electrode 244b, the second source electrode 246a and the second drain electrode 246b can be formed of a metallic material (e.g., Mo, Al, Cr, Au, Ti, Ni, Nd, Cu or alloys thereof) and can have a single-layer structure or a multi-layer structure.
[0075] The first semiconductor layer 210, the first gate electrode 214, the first source electrode 244a, and the first drain electrode 244b constitute a first TFT T1, and the second semiconductor layer 236, the second gate electrode 240, the second source electrode 246a, and the second drain electrode 246b constitute a second TFT T2. For example, the first TFT T1 can be a switching TFT, and the second TFT T2 can be a driving TFT. The first capacitor electrode 216 and the second capacitor electrode 230 constitute a storage capacitor.
[0076] The organic light-emitting display device 200 of this disclosure includes a first TFT T1 and a second TFT T2. Each of the first semiconductor layer 210 of the first TFT T1 and the second semiconductor layer 236 of the second TFT T2 may include one of a polycrystalline semiconductor material, an amorphous semiconductor material, and an oxide semiconductor material, and at least one of the first semiconductor layer 210 of the first TFT T1 and the second semiconductor layer 236 of the second TFT T2 may include an oxide semiconductor material.
[0077] In this disclosure, the first semiconductor layer 210 of the first TFT T1 may be formed of a polycrystalline semiconductor material (e.g., polycrystalline silicon), and the second semiconductor layer 236 of the second TFT T2 may be formed of an oxide semiconductor material.
[0078] exist Figure 3In this configuration, a first gate electrode 214, a first source electrode 244a, and a first drain electrode 244b are disposed above the first semiconductor layer 210, and a second gate electrode 240, a second source electrode 246a, and a second drain electrode 246b are disposed above the second semiconductor layer 236. That is, each of the first TFT T1 and the second TFT T2 has a coplanar structure. Alternatively, in each of the first TFT T1 and the second TFT T2, the gate electrode may be disposed below the semiconductor layer, and the source and drain electrodes may be disposed on or above the semiconductor layer. That is, each of the first TFT T1 and the second TFT T2 may have an inverted-staggered structure.
[0079] A planarization layer 250 covering the first source electrode 244a and the first drain electrode 244b, as well as the second source electrode 246a and the second drain electrode 246b, is disposed on the third interlayer insulating layer 242. The planarization layer 250 may be formed of an organic insulating material (e.g., photo-acryl or BCB).
[0080] The planarization layer 250 may include a lower planarization layer (e.g., a first planarization layer) 250a located on the first source electrode 244a and the first drain electrode 244b, as well as the second source electrode 246a and the second drain electrode 246b, and an upper planarization layer (e.g., a second planarization layer) 250b located on the lower planarization layer 250a.
[0081] A connection electrode 248 corresponding to the second source electrode 246a is disposed on the lower planarization layer 250a. The connection electrode 248 can be connected to the second source electrode 246a through a contact hole in the lower planarization layer 250a. For example, the connection electrode 248 can be formed of a metallic material (e.g., Mo, Al, Cr, Au, Ti, Ni, Nd, Cu or alloys thereof) and can have a single-layer structure or a multi-layer structure.
[0082] An upper planarization layer 250b is disposed on the lower planarization layer 250a to cover the connection electrode 248, and a first electrode 260a is disposed on the upper planarization layer 250b. The first electrode 260a corresponds to the connection electrode 248 and is connected to the connection electrode 248 through a contact hole in the upper planarization layer 250b. Alternatively, the connection electrode 248 can be omitted, and the first electrode 260a can be directly connected to the second source electrode 246a.
[0083] For example, a first electrode 260a is formed in each pixel region P. The first electrode 260a may be an anode and may include a transparent conductive oxide (TCO) layer and a reflective layer, the TCO layer being formed of a conductive material (e.g., a transparent conductive oxide material) having a relatively high work function.
[0084] For example, the transparent conductive oxide material may include at least one of indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), tin oxide (SnO), zinc oxide (ZnO), indium copper oxide (ICO), and aluminum zinc oxide (Al:ZnO, AZO), and the reflective layer may include at least one of silver (Ag), an alloy of Ag and palladium (Pd), Cu, In, and Nd, and aluminum palladium copper alloy (APC). For example, the first electrode 260a may have a two-layer structure of Ag / ITO or APC / ITO, or a three-layer structure of ITO / Ag / ITO or ITO / APC / ITO.
[0085] A dam 256 is formed on the upper planarization layer 250b at the boundary of the pixel region. The dam 256 covers the edge of the first electrode 260a and has a first opening to expose the center of the first electrode 260a. The dam 256 may include light-absorbing particles (e.g., black particles) to have light-absorbing properties.
[0086] An organic light-emitting layer 260b is provided to cover the first electrode 260a and the embankment 256. The organic light-emitting layer 260b contacts the first electrode 260a in the first opening of the embankment 256.
[0087] A second electrode 260c is formed above the substrate 202 on which the organic light-emitting layer 260b is formed. The second electrode 260c covers the entire surface of the display area. The second electrode 260c can be formed of at least one of ITO, IZO, Al, Ag, Cu, Pb, magnesium (Mg), Mo, Ti, and alloys thereof, and has a single-layer or multi-layer structure. The second electrode 260c can have a thin profile (small thickness) to provide light transmission characteristics (or semi-transmission characteristics).
[0088] The first electrode 260a, the organic light-emitting layer 260b, and the second electrode 260c constitute an OLED D. The OLED D can emit red light, green light, and blue light in the red pixel region, the green pixel region, and the blue pixel region, respectively.
[0089] In the organic light-emitting display device 200, light from the organic light-emitting layer 260b passes through the second electrode 260c to display an image. That is, the organic light-emitting display device 200 of this disclosure is a top-emitting display device.
[0090] An encapsulation layer (or encapsulation film) 262 is formed on the second electrode 260c to prevent moisture from penetrating into the OLED D. The encapsulation layer 262 may cover the entire substrate 202. The encapsulation layer 262 includes, but is not limited to, a first inorganic insulating layer 262a, an organic insulating layer 262b, and a second inorganic insulating layer 262c stacked sequentially.
[0091] For example, each of the first inorganic insulating layer 262a and the second inorganic insulating layer 262c may be formed of an inorganic insulating material (e.g., silicon oxide or silicon nitride), and the organic insulating layer 262b may be formed of an organic insulating material (e.g., acrylic resin, epoxy resin, phenolic resin, polyamide resin or PI resin).
[0092] A second buffer layer 264 is disposed on the encapsulation layer 262. The second buffer layer 264 can be used to block external moisture and / or oxygen. For example, the second buffer layer 264 can be formed of an inorganic insulating material (e.g., silicon oxide or silicon nitride) and can have a single-layer structure or a multi-layer structure.
[0093] A bridging pattern 266 is disposed on the second buffer layer 264. The bridging pattern 266 may correspond to the boundary of the pixel region P. For example, the bridging pattern 266 may be formed from one of ITO, IZO, Al, Ag, Cu, Pb, Mg, Mo, Ti and their alloys, and may have a single-layer structure or a multi-layer structure.
[0094] A touch interlayer insulating layer (e.g., an organic interlayer insulating layer) 270 is disposed on the bridging pattern 266 and over the entire substrate 202. For example, the touch interlayer insulating layer 270 may be formed of an organic insulating material (e.g., photo-acryl or BCB) and may have a single-layer or multi-layer structure.
[0095] Touch electrode 272 is disposed on touch interlayer insulating layer 270. Touch electrode 272 may correspond to the boundary of pixel region P. Touch electrode 272 is connected to bridging pattern 266 through contact holes formed in touch interlayer insulating layer 270.
[0096] For example, the touch electrode 272 may be formed from one of ITO, IZO, Al, Ag, Cu, Pb, Mg, Mo, Ti and their alloys, and may have a single-layer structure or a multi-layer structure.
[0097] A third buffer layer 274 is disposed on the touch electrode 272. For example, the third buffer layer 274 may be formed of an inorganic insulating material (e.g., silicon oxide or silicon nitride) and may have a single-layer structure or a multi-layer structure.
[0098] A black matrix 282 is disposed on the third buffer layer 274. The black matrix 282 is located at the boundary of the pixel region P and has a second opening corresponding to the OLED D. That is, the second opening of the black matrix 282 corresponds to the first opening of the light-shielding embankment 256.
[0099] A color filter layer 284 corresponding to OLED D is disposed on the third buffer layer 274. That is, the color filter layer 284 may correspond to the second opening of the black matrix 282. The color filter layer 284 may include a red color filter corresponding to the red pixel area, a green color filter corresponding to the green pixel area, and a blue color filter corresponding to the blue pixel area.
[0100] A color conversion layer can be disposed between the OLED D and the color filter layer 284. The color conversion layer may include a red color conversion layer corresponding to red pixel areas, a green color conversion layer corresponding to green pixel areas, and a blue color conversion layer corresponding to blue pixel areas. For example, the color conversion layer may include quantum dots.
[0101] exist Figure 3 In this configuration, bridging pattern 266, touch electrode 272, black matrix 282, and color filter layer 284 are disposed above OLED D. Alternatively, at least one of the bridging pattern 266, touch electrode 272, black matrix 282, and color filter layer 284 may be omitted. For example, color filter layer 284 may be disposed on encapsulation layer 262, and color conversion layer may be disposed between encapsulation layer 262 and color filter layer 284.
[0102] A protective layer 286 is disposed over the black matrix 282 and the color filter layer 284, as well as over the entire substrate 202. For example, the protective layer 286 may be formed of an organic insulating material (e.g., photo-acryl or BCB) and may have a single-layer or multi-layer structure.
[0103] Figure 4 This is a schematic cross-sectional view of an organic light-emitting display device according to a first embodiment of the present disclosure, and Figure 5 This is a schematic cross-sectional view of an OLED for an organic light-emitting display device according to a first embodiment of the present disclosure.
[0104] Reference Figure 4 and Figure 5 The first OLED D1, the second OLED D2 and the third OLED D3 are disposed above the substrate 202.
[0105] A first pixel region P1, which is a blue pixel region, a second pixel region P2, which is a green pixel region, and a third pixel region P3, which is a red pixel region, are defined on a substrate 202. A first OLED D1, a second OLED D2, and a third OLED D3 are respectively disposed in the first pixel region P1, the second pixel region P2, and the third pixel region P3. The first OLED D1 is a blue OLED that emits blue light, the second OLED D2 is a green OLED that emits green light, and the third OLED D3 is a red OLED that emits red light.
[0106] The second TFT T2, which serves as the driving TFT, is disposed on the substrate 202 and in each of the first pixel region P1, the second pixel region P2, and the third pixel region P3, and each of the first OLED D1, the second OLED D2, and the third OLED D3 is connected to the second TFT T2 through a contact hole in the planarization layer 250.
[0107] Each of the first OLED D1, the second OLED D2, and the third OLED D3 has a dual-stacked structure. Specifically, the first OLED D1 includes a first electrode 260a, a first light-emitting stack including a first blue emissive material layer (EML) 310 and a first hole transport layer (HTL) 371, a second light-emitting stack including a second blue EML 340 and a second HTL 377, and a second electrode 260c. The second OLED D2 includes a first electrode 260a, a first light-emitting stack including a first green EML 320 and a first HTL 371, a second light-emitting stack including a second green EML 350 and a second HTL 377, and a second electrode 260c. The third OLED D3 includes a first electrode 260a, a first light-emitting stack including a first red EML 330 and a first HTL 371, a second light-emitting stack including a second red EML 360 and a second HTL 377, and a second electrode 260c. In each of the first OLEDD1, the second OLEDD2, and the third OLEDD3, a charge generation layer (CGL) 376 is disposed between the first light-emitting stack and the second light-emitting stack.
[0108] Furthermore, in each of the first OLED D1 and the second OLED D2, a first hole-accessing layer 380 may be disposed between the second blue EML 340 and the second HTL 377, and between the second green EML 350 and the second HTL 377. The first hole-accessing layer 380 in the first OLED D1 and the first hole-accessing layer 380 in the second OLED D2 may be connected to each other. That is, the first hole-accessing layer 380 in the second OLED D2 may extend from the first hole-accessing layer 380 in the first OLED D1.
[0109] Furthermore, in the third OLED D3, the second hole auxiliary layer 382 can be disposed between the second red EML 360 and the second HTL 377. The second hole auxiliary layer 382 in the third pixel region P3 is separate from the first hole auxiliary layer 380 in the first pixel region P1 and the second pixel region P2.
[0110] Each of the first blue EML 310 and the second blue EML 340 has a three-layer structure. That is, the first blue EML 310 includes a first blue emitting layer 312 on the first HTL 371, a second blue emitting layer 314 on the first blue emitting layer 312, and a third blue emitting layer 316 on the second blue emitting layer 314, and the second blue EML 340 includes a first blue emitting layer 342 on the first hole auxiliary layer 380, a second blue emitting layer 344 on the first blue emitting layer 342, and a third blue emitting layer 346 on the second blue emitting layer 344.
[0111] Each of the first blue emitting layer 312 in the first blue EML 310 and the first blue EML 342 in the second blue EML 340 includes a first blue substrate and a first blue dopant. Each of the second blue emitting layer 314 in the first blue EML 310 and the second blue emitting layer 344 in the second blue EML 340 includes a second blue substrate and a second blue dopant. Each of the third blue emitting layer 316 in the first blue EML 310 and the third blue emitting layer 346 in the second blue EML 340 includes a third blue substrate and a third blue dopant.
[0112] In each of the first blue emitting layer 312 in the first blue EML 310 and the first blue EML 342 in the second blue EML 340, the weight percentage of the first blue body is greater than the weight percentage of the first blue dopant. In each of the second blue emitting layer 314 in the first blue EML 310 and the second blue emitting layer 344 in the second blue EML 340, the weight percentage of the second blue body is greater than the weight percentage of the second blue dopant. In each of the third blue emitting layer 316 in the first blue EML 310 and the third blue emitting layer 346 in the second blue EML 340, the weight percentage of the third blue body is greater than the weight percentage of the third blue dopant.
[0113] The first and third blue substrates can be made of the same material, and the second blue substrate can be different from the first and third blue substrates. The first to third dopants can be made of the same material.
[0114] Each of the first green EML 320 and the second green EML 350, as well as the first red EML 330 and the second red EML 360, may have a single-layer structure. Each of the first green EML 320 and the second green EML 350 may include a green body and a green dopant, and each of the first red EML 330 and the second red EML 360 may include a red body and a red dopant.
[0115] The first HTL 371 may include a first hole transport material, and the second HTL 377 may include a second hole transport material. The first hole transport material and the second hole transport material may be the same or different. The first hole auxiliary layer 380 may include the first hole auxiliary material, and the second hole auxiliary layer 382 may include the second hole auxiliary material. The first hole auxiliary material and the second hole auxiliary material may be the same or different.
[0116] The material of the first hole-access layer 380 has a triplet energy greater than that of the first blue dopant. For example, the difference between the triplet energy of the first hole-access layer 380 and the triplet energy of the first blue dopant can be 0.2 eV or greater, preferably in the range of 0.2 eV to 0.3 eV. Furthermore, the first blue host has a triplet energy lower than that of the first blue dopant and greater than that of the second blue host. Additionally, the material of the first hole-access layer 380 has a higher highest occupied molecular orbital (HOMO) energy level than that of the second HTL377 material.
[0117] Various methods for determining HOMO energy levels are known to those skilled in the art. For example, HOMO energy levels can be determined using a conventional surface analyzer, such as the AC3 surface analyzer manufactured by RKI Instruments. The surface analyzer can be used to detect single films (pure films) of compounds with a thickness of 50 nm. LUMO energy levels can be calculated as follows:
[0118] LUMO = HOMO - band gap.
[0119] The band gap can be calculated using any conventional method known to those skilled in the art, such as UV-Vis spectrophotometry (UV-vis) measurement of a single film with a thickness of 50 nm. For example, this can be done using an SCINCO S-3100 spectrophotometer. The HOMO and LUMO values of the compounds of the examples and embodiments disclosed herein can be determined in this manner. That is, the HOMO and LUMO values can be values determined experimentally or empirically for thin films such as 50 nm films.
[0120] As a result, excitons are confined within a second blue body with relatively low triplet energy, and recombination regions are formed in the second blue emissive layer 314 at the center of the first blue EML 310 and the second blue emissive layer 344 at the center of the second blue EML 340. Therefore, the luminous efficiency and lifetime of the first OLED D1 are improved.
[0121] The material of the first hole auxiliary layer 380 has a lower hole mobility than the material of the second HTL 377. The hole mobility of the material of the second HTL 377 can be 10 times or greater than the hole mobility of the material of the first hole auxiliary layer 380. For example, the hole mobility of the material of the first hole auxiliary layer 380 can be 1 × 10⁻⁶. -8 cm 2 / Vs to 1×10 -5 cm 2 Within the range of / Vs, and the hole mobility of the second HTL 377 material can be 1×10 -5 cm 2 / Vs to 1×10 -3 cm 2 Within the range of / Vs. However, it is not limited to this. That is, in the organic light-emitting display device 200 of this disclosure, the magnitude relationship between the hole mobility of the material of the first hole auxiliary layer 380 and the hole mobility of the material of the second HTL 377 is one of the important facts, while the range of hole mobility of the material of the first hole auxiliary layer 380 and the material of the second HTL 377 may not be an important fact.
[0122] Hole mobility was measured using hole-only devices (HOD) and JV fitting based on the space charge-limited current (SCLC) relationship.
[0123] Each of the first OLED D1 and the second OLED D2 has an appropriate (or desired) low grayscale capacitance, which improves the low grayscale response time (e.g., response speed) of the organic light-emitting display device 200 and / or reduces the driving voltage of the organic light-emitting display device 200. In other words, each of the first OLED D1 and the second OLED D2 has an appropriate threshold voltage, thereby improving the low grayscale response time of the organic light-emitting display device 200 and / or reducing the driving voltage of the organic light-emitting display device 200.
[0124] When the first hole-assist layer 380, the second HTL 377, the first blue emitting layers 312 and 342, and the second blue emitting layers 314 and 344 do not meet the above conditions, the low grayscale capacitance of the first OLED D1 and the second OLED D2 decreases, which may reduce the low grayscale response time and / or increase the driving voltage. However, in the organic light-emitting display device 200 of this disclosure, the first hole-assist layer 380, the second HTL 377, the first blue emitting layers 312 and 342, and the second blue emitting layers 314 and 344 meet the above conditions, which can prevent the organic light-emitting display device 200 from malfunctioning and / or reduce the driving voltage of the organic light-emitting display device 200, while improving luminous efficiency and lifespan.
[0125] The green dopant of the second green EML 350 can have a smaller triplet energy than the material of the first hole auxiliary layer 380. For example, the difference between the triplet energy of the green dopant and the triplet energy of the material of the first hole auxiliary layer 380 can be 0.3 eV or greater, preferably in the range of 0.3 eV to 0.4 eV. The triplet energy of the green dopant can be smaller than the triplet energy of the first blue dopant. The difference between the triplet energy of the first blue dopant and the triplet energy of the green dopant can be smaller than the difference between the triplet energy of the material of the first hole auxiliary layer 380 and the triplet energy of the first blue dopant.
[0126] As a result, the luminous efficiency and lifetime of the second OLED D2 are increased, and the first OLED D1 and the second OLED D2 have more suitable low grayscale capacitance.
[0127] Since the first auxiliary layer 380 of the same material is disposed in each of the first pixel region P1 and the second pixel region P2, the number of fine metal masks can be prevented from increasing even though the organic light-emitting display device 200 includes a second blue EML 340 with a three-layer structure and a first hole auxiliary layer 380.
[0128] In each of the first OLED D1, the second OLED D2, and the third OLED D3, a first HTL 371 is disposed between a first electrode 260a, which serves as the anode, and each of a first blue EML 310, a first green EML 320, and a first red EML 330. The first HTL 371 may be formed of the same material as the second HTL 377.
[0129] The first light-emitting stack of each of the first OLED D1, the second OLED D2, and the third OLED D3 may further include at least one of an electron blocking layer (EBL) 372 between the first HTL 371 and each of the first blue EML 310, the first green EML 320, and the first red EML 330, and a first hole blocking layer (HBL) 373 on each of the first blue EML 310, the first green EML 320, and the first red EML 330.
[0130] The second light-emitting stack of each of the first OLED D1, the second OLED D2 and the third OLED D3 may further include at least one of a second HBL 378 on each of the second blue EML 340, the second green EML 350 and the second red EML 360, and an electron transport layer (ETL) 379 on the second HBL 378.
[0131] Furthermore, the first light-emitting stack of each of the first OLED D1, the second OLED D2, and the third OLED D3 may further include at least one of a hole injection layer (HIL) between the first HTL 371 and the first electrode 260a, and an ETL between the first HBL 373 and the CGL 376.
[0132] Furthermore, the second light-emitting stack of each of the first OLED D1, the second OLED D2, and the third OLED D3 may further include an electron injection layer (EIL) between the ETL 379 and the second electrode 260c, which serves as the cathode.
[0133] CGL 376 may include an n-type CGL 374 and a p-type CGL 375 on the n-type CGL 374. Electrons are transferred and / or injected into the first light-emitting stack through the n-type CGL 374, and holes are transferred and / or injected into the second light-emitting stack through the p-type CGL 375.
[0134] Each of the first HTL 371, EBL 372, first HBL 373, CGL 376, second HTL 377, second HBL 378, and ETL 379 in the first pixel region P1, the second pixel region P2, and the third pixel region P3 is connected to each other to form a continuous structure. On the other hand, each of the first blue EML 310 and the second blue EML 340 is formed as an island shape in the first pixel region P1, each of the first green EML 320 and the second green EML 350 is formed as an island shape in the second pixel region P2, and each of the first red EML 330, the second red EML 360, and the second hole auxiliary layer 382 is formed as an island shape in the third pixel region P3. Furthermore, the first hole auxiliary layer 380 is formed as an island shape corresponding to the first pixel region P1 and the second pixel region P2.
[0135] As described above, in the organic light-emitting display device 200 of this disclosure, the organic light-emitting diode D has a double-stacked structure, and each of the first blue EML 310 and the second blue EML 340 has a three-layer structure. The material of the second HTL 377, the material of the first hole-assist layer 380, the first blue body and the first blue dopant of the first blue light-emitting layer 342, and the second blue body and the second blue dopant of the second blue light-emitting layer 344 satisfy the above conditions (or relationships), thereby improving the luminous efficiency and lifetime of the first OLED D1 in the first pixel region P1, which is the blue pixel region.
[0136] Furthermore, the materials of the second HTL 377 and the first hole auxiliary layer 380 satisfy the above conditions, and each of the first OLEDD1 and the second OLEDD2 has an appropriate low grayscale capacitance. Therefore, the low grayscale response time of the organic light-emitting display device 200 can be improved, and / or the driving voltage of the organic light-emitting display device 200 can be reduced.
[0137] Figure 6 This is a schematic cross-sectional view of an organic light-emitting display device according to a second embodiment of the present disclosure.
[0138] Compared to the organic light-emitting display device 200 according to the first embodiment of this disclosure, the organic light-emitting display device 400 according to the second embodiment of this disclosure differs in its hole auxiliary layer. Therefore, the description will focus on the hole auxiliary layer.
[0139] like Figure 6As shown, the organic light-emitting display device 400 includes a substrate 202 and includes a first hole auxiliary layer 480 located between a second HTL 377 and a second blue EML 340 in a first pixel region P1, which is a blue pixel region; a second hole auxiliary layer 482 located between a second HTL 377 and a second green EML 350 in a second pixel region P2, which is a green pixel region; and a third hole auxiliary layer 484 located between a second HTL 377 and a second red EML 360 in a third pixel region P3, which is a red pixel region.
[0140] The first hole auxiliary layer 480, the second hole auxiliary layer 482, and the third hole auxiliary layer 484 are spaced apart from each other. That is, in the organic light-emitting display device 200 according to the first embodiment of the present disclosure, the first hole auxiliary layer 380 is continuous in the first pixel region P1 and the second pixel region P2, while in the organic light-emitting display device 400 according to the second embodiment of the present disclosure, the first hole auxiliary layer 480 in the first pixel region P1 and the second hole auxiliary layer 482 in the second pixel region P2 are formed of the same material and are spaced apart from each other.
[0141] [OLED Characteristic Evaluation]
[0142] The threshold voltage (Vth) and luminous efficiency of the OLED (Ex) and the OLED (Ref) without the first hole auxiliary layer in the organic light-emitting display device according to the first embodiment of this disclosure were measured and are listed in Table 1. The characteristics of the OLED were measured by driving the probe station B1500 A device at 1 kHz and performing a voltage sweep.
[0143] Table 1
[0144]
[0145] As shown in Table 1, the OLED includes a hole-assisted layer located between the second HTL and each of the second blue EML and the second green EML, thereby improving the low grayscale capacitance (threshold voltage) and luminous efficiency. Therefore, the luminous efficiency of the organic light-emitting display device is improved, and the low grayscale response time is also enhanced.
[0146] It will be apparent to those skilled in the art that various modifications and variations can be made to the implementation of this disclosure without departing from the technical concept or scope thereof. Therefore, the aforementioned modifications and variations are intended to cover this disclosure, provided they fall within the scope of the appended claims and their equivalents.
Claims
1. An organic light-emitting display device, comprising: A substrate, the substrate comprising a blue pixel region and a green pixel region; A first electrode is disposed on the substrate and corresponds to each of the blue pixel region and the green pixel region; A first hole transport layer is disposed on the first electrode and corresponds to each of the blue pixel region and the green pixel region; A first blue luminescent material layer is disposed on the first hole transport layer and corresponds to the blue pixel region; A first green luminescent material layer is disposed on the first hole transport layer and corresponds to the green pixel region; A charge generation layer is disposed on the first blue luminescent material layer and the first green luminescent material layer and corresponds to each of the blue pixel region and the green pixel region; A second hole transport layer is disposed on the charge generation layer and corresponds to each of the blue pixel region and the green pixel region; A first hole auxiliary layer is located on the second hole transport layer and corresponds to each of the blue pixel region and the green pixel region; A second blue luminescent material layer is disposed on the first hole auxiliary layer and corresponds to the blue pixel region; A second green luminescent material layer is disposed on the first hole auxiliary layer and corresponds to the green pixel region; as well as The second electrode is disposed on the second blue luminescent material layer and the second green luminescent material layer and corresponds to each of the blue pixel region and the green pixel region. Each of the first blue luminescent material layer and the second blue luminescent material layer includes a first blue luminescent layer, a second blue luminescent layer located on the first blue luminescent layer, and a third blue luminescent layer located on the second blue luminescent layer. The first blue emitting layer in the second blue emitting material layer includes a blue substrate and a blue dopant. Wherein, the triplet energy of the material of the first hole-assisted layer is greater than the triplet energy of the blue dopant, and The HOMO energy level of the material of the first hole assist layer is lower than that of the material of the second hole transport layer.
2. The organic light-emitting display device according to claim 1, wherein, The difference between the triplet energy of the material in the first hole-assisted layer and the triplet energy of the blue dopant is 0.2 eV or greater.
3. The organic light-emitting display device according to claim 1, wherein, Each of the first green luminescent material layer and the second green luminescent material layer has a single-layer structure, and the second green luminescent material layer includes a green host and a green dopant.
4. The organic light-emitting display device according to claim 3, wherein, The triplet energy of the material in the first hole auxiliary layer is greater than the triplet energy of the green dopant.
5. The organic light-emitting display device according to claim 4, wherein, The triplet energy of the blue dopant is greater than that of the green dopant.
6. The organic light-emitting display device according to claim 1, wherein, The hole mobility of the material in the first hole auxiliary layer is less than that of the material in the second hole transport layer.
7. The organic light-emitting display device according to claim 6, wherein, The hole mobility of the first hole auxiliary layer is 1×10 -8 cm 2 / Vs to 1×10 -5 cm 2 Within the range of / Vs, and The hole mobility of the second hole transport layer is 1×10⁻⁶. -5 cm 2 / Vs to 1×10 -3 cm 2 Within the range of / Vs.
8. The organic light-emitting display device according to claim 1, wherein, The substrate further includes a red pixel region, and In the red pixel region: The first electrode is disposed on the substrate; The first hole transport layer is disposed on the first electrode; The first red luminescent material layer is disposed on the first hole transport layer; The charge generation layer is disposed on the first red luminescent material layer; The second hole transport layer is disposed on the charge generation layer; The second hole auxiliary layer is disposed on the second hole transport layer; A second red luminescent material layer is disposed on the second hole auxiliary layer; and The second electrode is disposed on the second red luminescent material layer.
9. The organic light-emitting display device according to claim 8, wherein, Each of the first red luminescent material layer and the second red luminescent material layer has a single-layer structure.
10. The organic light-emitting display device according to claim 9, wherein, The first hole-assist layer and the second hole-assist layer are formed of different materials.
11. The organic light-emitting display device according to claim 9, wherein, The first hole auxiliary layer and the second hole auxiliary layer are separated from each other.
12. The organic light-emitting display device according to claim 11, wherein, The first hole auxiliary layer in the blue pixel region is continuous with the first hole auxiliary layer in the green pixel region.
13. The organic light-emitting display device according to claim 11, wherein, The first hole auxiliary layer in the blue pixel region is separated from the first hole auxiliary layer in the green pixel region.
14. The organic light-emitting display device according to claim 1, further comprising: The encapsulation layer located on the second electrode.
15. The organic light-emitting display device according to claim 14, further comprising: A color filter layer is located on the encapsulation layer and includes a blue color filter pattern located in the blue pixel region and a green color filter pattern located in the green pixel region.
16. The organic light-emitting display device according to claim 15, wherein, The substrate further includes a red pixel region, and The color filter layer further includes a red color filter pattern located in the red pixel region.
17. The organic light-emitting display device according to claim 15, further comprising: A color conversion layer between the encapsulation layer and the color filter layer.
18. The organic light-emitting display device according to claim 17, wherein, The color conversion layer comprises quantum dots.
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