Light emitting element

Abstract

A light emitting element includes a substrate, a plurality of light blocking layers, a cover layer, and a plurality of bumps. The plurality of light blocking layers are spaced apart on a first surface of the substrate, wherein each of the plurality of light blocking layers includes a first anti-reflection layer, a metal layer, and a second anti-reflection layer, a bottom surface of the first anti-reflection layer is disposed on the first surface of the substrate, and includes at least one first bonding layer and at least one first light absorbing layer; the metal layer is disposed on the first anti-reflection layer; the second anti-reflection layer is disposed on the metal layer, and includes at least one second bonding layer and at least one second light absorbing layer, wherein one of the at least one second bonding layer serves as a top layer of the second anti-reflection layer. The cover layer covers the first surface of the substrate and the plurality of light blocking layers. The plurality of bumps are arranged on the cover layer, and each of two adjacent bumps in the plurality of bumps has an organic light emitting unit therebetween.

Description

Technical Field

[0001] This disclosure relates to a light-emitting element, and more particularly to an organic light-emitting element. Background Technology

[0002] Organic light-emitting displays (OLEDs) are widely used in high-end electronic devices. However, due to limitations in current technology, the luminous efficiency and quality of light-emitting materials cannot be effectively controlled, resulting in less-than-expected optical performance of the devices. Summary of the Invention

[0003] In this disclosure, a light-emitting element includes a substrate, a plurality of light-shielding layers, a capping layer, and a plurality of bumps. The plurality of light-shielding layers are spaced apart on a first surface of the substrate, each of the plurality of light-shielding layers comprising: a first anti-reflective layer, a metal layer, and a second anti-reflective layer. The bottom surface of the first anti-reflective layer is disposed on the first surface of the substrate and includes at least one first bonding layer and at least one first light-absorbing layer. The metal layer is disposed on the first anti-reflective layer. The second anti-reflective layer is disposed on the metal layer and includes at least one second bonding layer and at least one second light-absorbing layer, wherein one of the at least one second bonding layer serves as the top layer of the second anti-reflective layer. The capping layer covers the first surface of the substrate and the light-shielding layers. The plurality of bumps are disposed on the capping layer, and each pair of adjacent bumps has an organic light-emitting unit.

[0004] In this disclosure, a method for fabricating a light-emitting element includes: providing a substrate; forming a plurality of first anti-reflective layers on the substrate, including applying at least one bonding material and at least one light-absorbing material, wherein the plurality of first anti-reflective layers are separated from each other by a distance; forming a plurality of metal layers on the first anti-reflective layers; forming a plurality of second anti-reflective layers on the metal layers, including applying at least one bonding material and at least one light-absorbing material, wherein the top layer of the second anti-reflective layers is a bonding material; applying a capping layer to cover the top surfaces of the plurality of second anti-reflective layers, the substrate exposed between the plurality of first anti-reflective layers, and the side surfaces of the plurality of first anti-reflective layers, the metal layers, and the plurality of second anti-reflective layers; and alternately distributing a plurality of organic light-emitting units and a plurality of bumps on the capping layer.

[0005] In some embodiments, the second bonding layer, which serves as the top layer of the second antireflective layer, contains the same material as the cover layer.

[0006] In some embodiments, the first bonding layer contains the same material as the second bonding layer, and the materials contained in the first bonding layer and the second bonding layer are the same as the materials contained in the cover layer.

[0007] In some embodiments, the equivalent refractive index of the first light-absorbing layer is greater than the equivalent refractive index of the first bonding layer; and the equivalent refractive index of the second light-absorbing layer is greater than the equivalent refractive index of the second bonding layer.

[0008] In some embodiments, the first light-absorbing layer comprises a metal oxide and the second light-absorbing layer comprises a metal oxide.

[0009] In some embodiments, the thickness of the first antireflective layer is substantially the same as the thickness of the second antireflective layer.

[0010] In some embodiments, the ratio of the thickness of the first antireflective layer to the thickness of the metal layer is in the range of about 1:1 to about 3:1; and the ratio of the thickness of the second antireflective layer to the thickness of the metal layer is in the range of about 1:1 to about 3:1.

[0011] In some embodiments, the positions of the plurality of light-blocking layers correspond one-to-one with the positions of the plurality of bumps.

[0012] In some embodiments, the width of each of the plurality of light-blocking layers is greater than the width of each of the plurality of bumps.

[0013] In some embodiments, at least one of the first bonding layers of the first antireflective layer serves as the bottom layer of the first antireflective layer, which is in direct contact with the substrate, and at least one of the first light-absorbing layers serves as the top layer of the first antireflective layer, which is in direct contact with the metal layer.

[0014] In some embodiments, the bonding material is the same as the material forming the cover layer.

[0015] In some embodiments, each of forming a plurality of first antireflective layers includes sequentially applying a bonding material, a light-absorbing material, a bonding material, and a light-absorbing material to a substrate; and each of forming a plurality of second antireflective layers includes sequentially applying a light-absorbing material, a bonding material, a light-absorbing material, and a bonding material to a metal layer.

[0016] In some embodiments, a plurality of first anti-reflective layers, a metal layer, and a plurality of second anti-reflective layers are formed by a vapor deposition process. Attached Figure Description

[0017] Figure 1 This is a top view illustrating the intermediate products of an organic light-emitting element.

[0018] Figure 2 For example, along Figure 1 A cross-sectional view of line AA in the diagram.

[0019] Figure 3 The following is a cross-sectional view of the light-blocking layer as an example.

[0020] Figure 4 The following is a cross-sectional view of the light-blocking layer as an example.

[0021] Figure 5 The following is a cross-sectional view of the light-blocking layer as an example.

[0022] Figure 6 The following is a cross-sectional view of the light-blocking layer as an example.

[0023] Figure 7 The following is a cross-sectional view of the light-blocking layer as an example.

[0024] Figure 8 The following is a cross-sectional view of the light-blocking layer as an example.

[0025] Figures 9A to 9J The illustration depicts different stages of the manufacturing process of a light-emitting element according to one embodiment. Detailed Implementation

[0026] Figure 1 This is a top view illustrating an intermediate product of the light-emitting element 10A. The light-emitting element 10 has a light-emitting layer 20 and an overlay layer 40 located above the light-emitting layer 20. For the light-emitting layer 20, spacers 21 may be designed to provide an array of recesses for accommodating an array of light-emitting pixels. In some embodiments, the spacers 21 may comprise a photosensitizing material.

[0027] Figure 2 For example, along Figure 1 The diagram shows a cross-sectional view along line AA, illustrating only the light-emitting region. For simplicity, the upper cover layer 40 is omitted here. In some embodiments, the light-emitting element 30 includes a substrate 100, a light-shielding layer 110, a cover layer 102, a first electrode 104, a bump 105, an organic light-emitting stack layer 106, a second electrode 106D, and a plurality of light-emitting units. In some embodiments, the organic light-emitting stack layer 106 includes a carrier injection layer 106L1, a carrier transport layer 106L2, an organic emission layer 106L3, and an organic carrier transport layer 106L4. In some embodiments, the light-emitting element 30 includes a first organic light-emitting unit 30a, a second organic light-emitting unit 30b, and a third organic light-emitting unit 30c.

[0028] In some embodiments, substrate 100 may include a thin-film transistor (TFT) array. In some embodiments, substrate 100 includes a substrate (not shown), a dielectric layer (not shown), and one or more circuits (not shown) disposed on or within the substrate. In some embodiments, the substrate is a transparent substrate, or at least partially transparent. In some embodiments, the substrate is a non-flexible substrate, and the material of the substrate may include glass, quartz, low-temperature polysilicon (LTPS), or other suitable materials. In some embodiments, the substrate is a flexible substrate, and the material of the substrate may include transparent epoxy resin, polyimide, polyvinyl chloride, methyl methacrylate, or other suitable materials. A dielectric layer may be disposed on the substrate as needed. In some embodiments, the dielectric layer may include silicon oxide, silicon nitride, silicon oxynitride, or other suitable materials.

[0029] In some embodiments, the circuit may include a complementary metal-oxide-semiconductor (CMOS) circuit, or a plurality of transistors and capacitors adjacent to the transistors, wherein the transistors and capacitors are formed on a dielectric layer. In some embodiments, the transistors are thin-film transistors (TFTs). Each transistor includes a source / drain region (including at least one source region and one drain region), a channel region between the source / drain regions, a gate electrode disposed above the channel region, and a gate insulator between the channel region and the gate electrode. The channel region of the transistor may be made of a semiconductor material, such as silicon or other elements selected from Group IV or Group III and Group V.

[0030] A plurality of light-shielding layers 110 are formed on a substrate 100. The plurality of light-shielding layers 110 are spaced apart on the upper surface 100s1 of the substrate 100 and directly contact the upper surface 100s1 of the substrate 100. The plurality of light-shielding layers 110 are separated from each other by a distance W1. The thickness H1 of the light-shielding layer 110 is less than the thickness H0 of the substrate 100. In some embodiments, the ratio of the thickness H1 of the light-shielding layer 110 to the thickness H0 of the substrate 100 is about 1:10 to about 1:1.5. In some embodiments, the ratio of the thickness H1 of the light-shielding layer 110 to the thickness H0 of the substrate 100 is about 1:8 to about 1:3. In some embodiments, the ratio of the thickness H1 of the light-shielding layer 110 to the thickness H0 of the substrate 100 is about 1:6 to about 1:4.

[0031] Figure 3 A cross-sectional view of a light-blocking layer is shown as an example. In some embodiments, a plurality of light-blocking layers 110 can absorb more than 90% of visible light. In some embodiments, each light-blocking layer 110 includes a first anti-reflection layer 112, a metal layer 114, and a second anti-reflection layer 116. The bottom surface of the first anti-reflection layer 112 is disposed on the upper surface 100s1 of the substrate 100, and includes at least one first bonding layer 1121 and at least one first light-absorbing layer 1122. The metal layer 114 is disposed on the first anti-reflection layer 112. The second anti-reflection layer 116 is disposed on the metal layer 114, and includes at least one second bonding layer 1161 and at least one second light-absorbing layer 1162, wherein one of the at least one second bonding layer 1161 serves as the top layer of the second anti-reflection layer 116.

[0032] In some embodiments, the thickness h1 of the first antireflective layer 112 may be less than the thickness h2 of the metal layer 114; the thickness h1 of the first antireflective layer 112 may be substantially equal to the thickness h2 of the metal layer 114; the thickness h1 of the first antireflective layer 112 may be greater than the thickness h2 of the metal layer 114. In some embodiments, the thickness h3 of the second antireflective layer 116 may be less than the thickness h2 of the metal layer 114; the thickness h3 of the second antireflective layer 116 may be substantially equal to the thickness h2 of the metal layer 114. The thickness h3 of the second antireflective layer 116 may be greater than the thickness h2 of the metal layer 114. In some embodiments, the thickness h1 of the first antireflective layer 112 may be less than the thickness h3 of the second antireflective layer 116; the thickness h1 of the first antireflective layer 112 may be substantially equal to the thickness h3 of the second antireflective layer 116; the thickness h1 of the first antireflective layer 112 may be greater than the thickness h3 of the second antireflective layer 116. In some embodiments, the ratio of the thickness h1 of the first antireflective layer 112 to the thickness h2 of the metal layer 114 is approximately 3:1 to approximately 1:5. In some embodiments, the ratio of the thickness h1 of the first antireflective layer 112 to the thickness h2 of the metal layer 114 is approximately 1:1 to approximately 3:1. In some embodiments, the ratio of the thickness h3 of the second antireflective layer 116 to the thickness h2 of the metal layer 114 is approximately 3:1 to approximately 1:5. In some embodiments, the ratio of the thickness h3 of the second antireflective layer 116 to the thickness h2 of the metal layer 114 is approximately 1:1 to approximately 3:1. In some embodiments, the ratio of the thickness h1 of the first antireflective layer 112 to the thickness h3 of the second antireflective layer 116 is approximately 3:1 to approximately 1:3. In some embodiments, the ratio of the thickness h1 of the first antireflective layer 112 to the thickness h3 of the second antireflective layer 116 is approximately 2:1 to approximately 1:2. In some embodiments, the ratio of the thickness h1 of the first antireflective layer 112 to the thickness h3 of the second antireflective layer 116 may be substantially 1:1.

[0033] like Figure 3As shown, the first antireflective layer 112 includes a first bonding layer 1121 and a first light-absorbing layer 1122. The first bonding layer 1121 is in direct contact with the upper surface 100s1 of the substrate 100, and the first light-absorbing layer 1122 is disposed on the first bonding layer 1121, such that the metal layer 114 is disposed on the first light-absorbing layer 1122. The second antireflective layer 116 includes a second bonding layer 1161 and a second light-absorbing layer 1162. The second light-absorbing layer 1162 is disposed on the metal layer 114 and is in direct contact with the metal layer 114. The second bonding layer 1161 is disposed on the second light-absorbing layer 1162 and is in direct contact with the overlying cover layer 102. The thickness h1 of the first antireflective layer 112 is substantially equal to the thickness h3 of the second antireflective layer 116. The thickness h1 of the first antireflective layer 112 is greater than the thickness h2 of the metal layer 114, and the thickness h3 of the second antireflective layer 116 is greater than the thickness h2 of the metal layer 114.

[0034] In some embodiments, the first antireflective layer 112 may have approximately to approximately The total thickness. In some embodiments, the first antireflective layer 112 may have approximately to approximately The total thickness. In some embodiments, the first antireflective layer 112 may have approximately to approximately The total thickness. In some embodiments, the metal layer 114 may have approximately to approximately The thickness of the metal layer 114. In some embodiments, the metal layer 114 may have approximately [a certain thickness]. to approximately The thickness of the metal layer 114. In some embodiments, the metal layer 114 may have approximately [a certain thickness]. to approximately The thickness. In some embodiments, the second antireflective layer 116 may have approximately [a certain thickness]. to approximately The total thickness. In some embodiments, the second antireflective layer 116 may have approximately to approximately The total thickness. In some embodiments, the second antireflective layer 116 may have approximately to approximately The total thickness.

[0035] In some embodiments, the first bonding layer 1121 may comprise a material with a low equivalent refractive index, such as silicon oxide (SiO2). The first light-absorbing layer 1122 may comprise a material with a high equivalent refractive index, such as a metal oxide (e.g., titanium oxide, TiO2). In some embodiments, the material comprised in the second bonding layer 1161 may be the same as or different from the material comprised in the first bonding layer 1121, and the material comprised in the second light-absorbing layer 1162 may be the same as or different from the material comprised in the first light-absorbing layer 1122. The second bonding layer 1161 may comprise a material with a low equivalent refractive index, such as silicon oxide (SiO2). The second light-absorbing layer 1162 may comprise a material with a high equivalent refractive index, such as a metal oxide (e.g., titanium oxide, TiO2). In some embodiments, the first antireflective layer 112 is transparent, the second antireflective layer 116 is transparent, and the light-blocking layer 110 still exhibits the color of the metal layer due to the presence of the metal layer.

[0036] Figure 4 The following is a cross-sectional view of the light-blocking layer. In some embodiments, the first anti-reflective layer 112 includes two first bonding layers 1121 and two first light-absorbing layers 1122 spaced apart, wherein one first bonding layer 1121 is disposed on the upper surface 100s1 of the substrate 100, and then a first light-absorbing layer 1122, a first bonding layer 1121, and a first light-absorbing layer 1122 are sequentially disposed. In some embodiments, more staggered first bonding layers 1121 and first light-absorbing layers 1122 can be added to adjust the adhesion and light absorption effect. In some embodiments, the second anti-reflective layer 116 includes two second bonding layers 1161 and two second light-absorbing layers 1162 spaced apart, wherein one second light-absorbing layer 1162 is disposed on the upper surface of the metal layer 114, and then a second bonding layer 1161, a second light-absorbing layer 1162, and a second bonding layer 1161 are sequentially disposed, such that the top layer of the second anti-reflective layer 116 is a second bonding layer 1161. In some embodiments, more staggered second bonding layers 1161 and second light-absorbing layers 1162 may be added to adjust the adhesion and light absorption effect to a suitable degree. In some embodiments, the thickness h1 of the first antireflective layer 112 may be substantially equal to the thickness h3 of the second antireflective layer 116.

[0037] Figure 5A cross-sectional view of the light-blocking layer is shown as an example. In some embodiments, the thickness h1 of the first antireflective layer 112 may be greater than the thickness h3 of the second antireflective layer 116. In some embodiments, the first antireflective layer 112 includes two first bonding layers 1121 and two first light-absorbing layers 1122 disposed at intervals, wherein one first bonding layer 1121 is disposed on the upper surface 100s1 of the substrate 100, and then a first light-absorbing layer 1122, a first bonding layer 1121, and a first light-absorbing layer 1122 are disposed sequentially. The second antireflective layer 116 includes a second light-absorbing layer 1162 disposed on the upper surface of the metal layer 114, and a second bonding layer 1161 disposed on the second light-absorbing layer 1162, such that the top layer of the second antireflective layer 116 is a second bonding layer 1161.

[0038] Figure 6 A cross-sectional view of the light-blocking layer is shown as an example. In some embodiments, the thickness h1 of the first antireflective layer 112 may be less than the thickness h3 of the second antireflective layer 116. In some embodiments, the first antireflective layer 112 includes a first bonding layer 1121 disposed on the upper surface 100s1 of the substrate 100, and a first light-absorbing layer 1122 disposed on the first bonding layer 1121. In some embodiments, the second antireflective layer 116 includes two second bonding layers 1161 and two second light-absorbing layers 1162 disposed at intervals, wherein one second light-absorbing layer 1162 is disposed on the upper surface of the metal layer 114, and then a second bonding layer 1161, a second light-absorbing layer 1162, and a second bonding layer 1161 are disposed sequentially, such that the top layer of the second antireflective layer 116 is a second bonding layer 1161.

[0039] Figure 7The diagram shows a cross-sectional view of a light-blocking layer. In some embodiments, the first antireflective layer 112 may include at least one other material layer in addition to the first bonding layer 1121 and the first light-absorbing layer 1122 to obtain different properties or performances, such as a structural reinforcement layer or an adhesive layer that increases the stability of the bond between the first bonding layer 1121 and the first light-absorbing layer 1122. In some embodiments, the first antireflective layer 112 includes a first bonding layer 1121 disposed on the upper surface 100s1 of the substrate 100, a first additional material layer 1123 disposed on the first bonding layer 1121, and a first light-absorbing layer 1122 disposed on the first additional material layer 1123. In the second antireflective layer 116, in addition to the second bonding layer 1161 and the second light-absorbing layer 1162, at least one other material layer may be included to obtain different properties or performances, such as a structural reinforcement layer or an adhesive layer that increases the stability of the bond between the second bonding layer 1161 and the second light-absorbing layer 1162. In some embodiments, the second antireflective layer 116 includes a second light-absorbing layer 1162 disposed on the upper surface of the metal layer 114, a second additional material layer 1163 disposed on the second light-absorbing layer 1162, and a second bonding layer 1161 disposed on the second additional material layer 1163, such that the top layer of the second antireflective layer 116 is a second bonding layer 1161.

[0040] Figure 8 The following is a cross-sectional view of the light-blocking layer. In some embodiments, at least one first additional material layer 1123 may be disposed in any layer of the first antireflective layer 112, and at least one second additional material layer 1163 may be disposed in any layer of the second antireflective layer 116. In some embodiments, the first antireflective layer 112 includes two first bonding layers 1121, two first light-absorbing layers 1122, and one first additional material layer 1123 disposed at intervals, wherein one first bonding layer 1121 is disposed on the upper surface 100s1 of the substrate 100, and then one first additional material layer 1123, one first light-absorbing layer 1122, one first bonding layer 1121, and one first light-absorbing layer 1122 are disposed sequentially. In some embodiments, the second antireflective layer 116 includes two second bonding layers 1161, two second light-absorbing layers 1162, and a second additional material layer 1163 disposed at intervals. The second light-absorbing layer 1162 is disposed on the upper surface of the metal layer 114, and then the second bonding layer 1161, the second light-absorbing layer 1162, the second additional material layer 1163, and the second bonding layer 1161 are disposed in sequence, such that the top layer of the second antireflective layer 116 is a second bonding layer 1161.

[0041] A capping layer 102 is formed above the substrate 100 and covers a plurality of light-shielding layers 110. The capping layer 102 contacts the upper surface 101s1 of the light-shielding layers 110. The capping layer 102 contacts the two side surfaces 101s3 and 101s4 of the light-shielding layers 110. The capping layer 102 covers the upper surface 101s1 and the two side surfaces 101s3 and 101s4 of the light-shielding layers 110. The capping layer 102 is formed in the gaps between the plurality of light-shielding layers 110. The thickness H2 of the capping layer 102 may be less than the thickness H0 of the substrate 100. The thickness H2 of the capping layer 102 may be substantially equal to the thickness H0 of the substrate 100. The thickness H2 of the capping layer 102 may be greater than the thickness H0 of the substrate 100. The thickness H2 of the capping layer 102 may be greater than the thickness H1 of the light-shielding layers 110. In some embodiments, the ratio of the thickness H1 of the light-shielding layer 110 to the thickness H2 of the cover layer 102 is approximately 1:10 to approximately 1:1.5. In some embodiments, the ratio of the thickness H1 of the light-shielding layer 110 to the thickness H0 of the substrate 100 is approximately 1:8 to approximately 1:3. In some embodiments, the ratio of the thickness H1 of the light-shielding layer 110 to the thickness H0 of the substrate 100 is approximately 1:6 to approximately 1:4. In some embodiments, the material contained in the cover layer 102 may be the same as the material contained in the first bonding layer 1121, such as silicon oxide, and the material contained in the cover layer 102 may be the same as the material contained in the second bonding layer 1161, such as silicon oxide, to ensure a strong bond between the light-shielding layer 110 and the cover layer. In some embodiments, the material contained in the cover layer 102 may be different from the material contained in the first bonding layer 1121, and the material contained in the cover layer 102 may be different from the material contained in the second bonding layer 1161, but they may be compatible and have sufficient adhesion to ensure a strong bond between the light-shielding layer 110 and the cover layer.

[0042] A plurality of first electrodes 104 are formed on the capping layer 102. The plurality of first electrodes 104 contact the upper surface 102s1 of the capping layer 102. The plurality of first electrodes 104 are separated from each other. The plurality of first electrodes 104 directly contact the capping layer 102. The plurality of first electrodes 104 are electrically connected to the substrate 100.

[0043] A plurality of bumps 105 are formed on a portion of the upper surface of the first electrode 104. The surrounding area of ​​the first electrode 104 is covered by the bumps 105. In some embodiments, the edge corners of the first electrode 104 are completely surrounded by the bumps 105. In some embodiments, the sidewalls of the first electrode 104 are completely in contact with the bumps 105. In some embodiments, two bumps 105 in the gap between two first electrodes 104 are separated from each other. The light-blocking layer 110 is electrically insulated from the first electrode 104 disposed on the cover layer 102 through the cover layer 102. The positions of the plurality of bumps 105 may correspond one-to-one with the positions of the plurality of light-blocking layers 110. In some embodiments, the width of each bump 105 may substantially correspond to the width of the light-blocking layer 110. In some embodiments, the width of each bump 105 may be smaller than the width of the corresponding light-blocking layer 110. In some embodiments, the width of each bump 105 may be larger than the width of the corresponding light-blocking layer 110. In some embodiments, the edges of each bump 105 may be aligned with the edges of the corresponding light-blocking layer 110.

[0044] In some embodiments, the thickness H4 of the first electrode 104 is less than the thickness H1 of the light-shielding layer 110. The thickness H4 of the first electrode 104 may be substantially equal to the thickness H1 of the light-shielding layer 110. The thickness H4 of the first electrode 104 may be greater than the thickness H1 of the light-shielding layer 110. In some embodiments, the ratio of the thickness H1 of the light-shielding layer 110 to the thickness H4 of the first electrode 104 is approximately 10:1 to approximately 1:10. In some embodiments, the ratio of the thickness H1 of the light-shielding layer 110 to the thickness H0 of the substrate 100 is approximately 5:1 to approximately 1:5. In some embodiments, the ratio of the thickness H1 of the light-shielding layer 110 to the thickness H0 of the substrate 100 is approximately 3:1 to approximately 1:3.

[0045] The first electrode 104 may have approximately to approximately The total thickness. In some embodiments, the first electrode 104 has approximately to approximately The total thickness. In some embodiments, the first electrode 104 has approximately The total thickness. The first electrode 104 may be a conductive layer. The first electrode 104 may contain ITO, IZO, IGZO, AlCu alloy, or AgMo alloy, with a thickness of approximately to ITO (or IZO or IGZO) and approximately to approximately Metal films (Ag, Al, Mg, Au) with a thickness of approximately to ITO (or IZO or IGZO).

[0046] In some embodiments, the first electrode 104 is a composite structure. For example, the first electrode 104 has a conductive film and a transparent conductive film disposed thereon. The conductive film is located between the transparent conductive film and the substrate 100. In some embodiments, the conductive film comprises aluminum, gold, silver, copper, etc. In some embodiments, the transparent conductive film comprises indium, tin, graphene, zinc, oxygen, etc. In some embodiments, the first electrode 104 comprises a transparent conductive film. In some embodiments, the first electrode 104 comprises ITO (indium tin oxide). In some embodiments, the first electrode 104 comprises IZO (indium zinc oxide). In some embodiments, the first electrode 104 comprises IGZO (indium gallium zinc oxide). In some embodiments, the roughness of the transparent conductive film... The thickness of the conductive film can be approximately to approximately Between. The thickness of the transparent conductive film can be approximately... to approximately between.

[0047] In some embodiments, the first electrode 104 has at least three different films. A conductive film (e.g., Al, Cu, Ag, Au, etc.) is sandwiched between two transparent conductive films. In some cases, one of the two transparent conductive films is ITO, with one side in contact with the substrate 100 and the other side in contact with the conductive film. In some cases, one of the two transparent conductive films is ITO, with one side in contact with the conductive film and the other side in contact with the bump 105 or the light-emitting material.

[0048] In some embodiments, each bump 105 has a curved surface that protrudes away from the substrate 100 and covers the peripheral region of the first electrode 104. The bump 105 can have different shapes. In some embodiments, the bump 105 has a curved surface. In some embodiments, the bump 105 is trapezoidal in shape. In some embodiments, the bump 105 is rectangular in shape. The pattern of the bump 105 is designed according to a pixel arrangement, and the patterned bump 105 may be referred to as a pixel defined layer (PDL). The bump 105 is disposed on the cover layer 102. Each bump 105 fills the gap between two adjacent first electrodes 104. Each first electrode 104 is partially covered by the bump 105. The bump 105 may contain a photosensitive material. Figure 2 In the middle, the area of ​​the light-blocking layer 110 in the horizontal direction is larger than the area of ​​each of the bumps 105.

[0049] The bump 105 has an edge on the upper surface covering the first electrode 104. The light-blocking layer 110 has an edge near the center of the first electrode 104. The edge of the light-blocking layer 110 is not aligned with the edge of the bump 105. There is an offset between the edge of the bump 105 and the edge of the light-blocking layer. The percentage of the offset relative to the width of the light-blocking layer 110 may be greater than or equal to 10%. The percentage of the offset relative to the width of the light-blocking layer 110 may be greater than or equal to 20%. The percentage of the offset relative to the width of the light-blocking layer 110 may be greater than or equal to 30%. The percentage of the offset relative to the width of the light-blocking layer 110 may be greater than or equal to 40%.

[0050] In some embodiments, Figure 2 The spacer 21 has several protrusions 105 to define a pattern of light-emitting pixels. Recesses are located between two adjacent protrusions 105 and provide space to accommodate the light-emitting pixels. Those skilled in the art will understand that, when viewed in cross-section, the protrusions 105 are drawn in a broken manner, but from... Figure 2 As can be seen from the top view, they can be connected to each other via other parts of the spacer 21.

[0051] The light-emitting element 30 includes a light-emitting array, which includes a first organic light-emitting unit 30a, a second organic light-emitting unit 30b, and a third organic light-emitting unit 30c. The organic light-emitting unit may also be referred to as a light-emitting pixel in this embodiment. In some embodiments, the light-emitting unit 30a includes a first electrode 104, a carrier injection layer 106L1 above the bump 105 and the first electrode 104, a carrier transport layer 106L2 above the carrier injection layer 106L1, an organic emission layer 106L3 above a portion of the carrier transport layer 106L2, and an organic carrier transport layer 106L4 above the organic emission layer 106L3. The carrier injection layer 106L1, carrier transport layer 106L2, organic emission layer 106L3, and organic carrier transport layer 106L4 can be collectively referred to as the organic light-emitting stack layer 106.

[0052] In some embodiments, the carrier injection layer 106L1 is disposed between the first electrode 104 and the carrier transport layer 106L2. The light-emitting unit 30a includes an organic material, which may be disposed in any of the carrier transport layer, carrier injection layer, or organic emission layer in the light-emitting unit 30a according to different embodiments. Furthermore, in some embodiments, the organic material has an absorption rate greater than or equal to 50% for a specific wavelength; in some embodiments, an absorption rate greater than or equal to 60% for a specific wavelength; in some embodiments, an absorption rate greater than or equal to 70% for a specific wavelength; in some embodiments, an absorption rate greater than or equal to 80% for a specific wavelength; in some embodiments, an absorption rate greater than or equal to 90% for a specific wavelength; and in some embodiments, an absorption rate greater than or equal to 95% for a specific wavelength. In some embodiments, the specific wavelength is no greater than 400 nm; in some embodiments, the specific wavelength is no greater than 350 nm; in some embodiments, the specific wavelength is no greater than 300 nm; in some embodiments, the specific wavelength is no greater than 250 nm; in some embodiments, the specific wavelength is no greater than 200 nm; in some embodiments, the specific wavelength is no greater than 150 nm; and in some embodiments, the specific wavelength is no greater than 100 nm.

[0053] exist Figure 2 In this configuration, the distance between the plurality of light-blocking layers 110 is W1, and the distance between two adjacent bumps 105 is W2. In some embodiments, the distance W2 between two adjacent bumps 105 is greater than the distance W1 between the plurality of light-blocking layers 110. In some embodiments, the distance W2 between two adjacent bumps 105 can define the area of ​​the effective light-emitting region. Because the distance W1 between the plurality of light-blocking layers 110 is less than W2, the plurality of light-blocking layers 110 can control the light emitted by the first electrode 104, thereby improving the imaging effect of the pattern.

[0054] Furthermore, because the light-shielding layer 110 can block ambient light traveling upwards from the substrate 100, it can reduce optical crosstalk between the ambient light and the light emitted by the light-emitting unit 30a. In other words, because the light-shielding layer 110 can absorb more than 90% of the ambient light traveling upwards from the substrate 100, it can reduce optical crosstalk between the ambient light and the light emitted by the light-emitting unit 30a. Since anti-reflective layers are provided at both the top and bottom of the light-shielding layer 110, both the top and bottom surfaces of the light-shielding layer 110 can be absorbed by the anti-reflective layers, avoiding any impact on the performance of the light-emitting element 10. In particular, it can reduce the back-and-forth reflection of light emitted from the organic light-emitting units 30a, 30b, and 30c between the second electrode 106D and the light-shielding layer 110, thereby increasing imaging clarity. Moreover, the top layer of the light-blocking layer 110 is a second bonding layer 1161, which contains the same material as the overlying cover layer 102, thus increasing the adhesion between the light-blocking layer 110 and the cover layer 102.

[0055] In some embodiments, the absorptivity of bump 105 for a specific wavelength is greater than or equal to 50%; in some embodiments, the absorptivity of bump 105 for a specific wavelength is greater than or equal to 60%; in some embodiments, the absorptivity of bump 105 for a specific wavelength is greater than or equal to 70%; in some embodiments, the absorptivity of bump 105 for a specific wavelength is greater than or equal to 80%; in some embodiments, the absorptivity of bump 105 for a specific wavelength is greater than or equal to 90%; and in some embodiments, the absorptivity of bump 105 for a specific wavelength is greater than or equal to 95%. In some embodiments, the specific wavelength is not greater than 400 nm; in some embodiments, the specific wavelength is not greater than 350 nm; in some embodiments, the specific wavelength is not greater than 300 nm; in some embodiments, the specific wavelength is not greater than 250 nm; in some embodiments, the specific wavelength is not greater than 200 nm; in some embodiments, the specific wavelength is not greater than 150 nm; and in some embodiments, the specific wavelength is not greater than 100 nm.

[0056] A carrier injection layer 106L1 is disposed on the exposed surfaces of the cover layer 102, the bump 105, and the first electrode 104. The carrier injection layer 106L1 continuously covers the exposed surfaces of the bump 105 and the first electrode 104. In some embodiments, the exposed surface of each first electrode 104 is configured as an effective light-emitting region for a light-emitting unit 30a. Selectively, the carrier injection layer 106L1 contacts the bump 105. In some embodiments, the carrier injection layer 106L1 contacts the first electrode 104. In some embodiments, the carrier injection layer 106L1 is an organism. In some embodiments, the carrier injection layer 106L1 is configured to perform hole injection. In some embodiments, the carrier injection layer 106L1 is a hole injection layer. In some embodiments, the carrier injection layer 106L1 may have approximately to approximately The thickness.

[0057] A carrier transport layer 106L2 is disposed on the exposed surfaces of the cover layer 102, the bumps 105, and the first electrode 104. The carrier transport layer 106L2 is disposed above and completely covers the carrier injection layer 106L1. The carrier injection layer 106L1 is disposed below the carrier transport layer 106L2. The carrier transport layer 106L2 continuously covers the carrier injection layer 106L1. The carrier transport layer 106L2 covers a plurality of bumps 105 and a plurality of first electrodes 104. Selectively, the carrier transport layer 106L2 contacts the carrier injection layer 106L1. In some embodiments, the carrier transport layer 106L2 is an organism. In some embodiments, the carrier transport layer 106L2 is configured to perform hole transport. In some embodiments, the carrier transport layer 106L2 is a first hole transport layer. In some embodiments, the carrier injection layer 106L1 may have approximately to approximately The thickness.

[0058] An organic emitting layer 106L3 is disposed on the exposed surfaces of the capping layer 102, bumps 105, and first electrode 104. The organic emitting layer 106L3 is disposed above and completely covers the carrier transport layer 106L2. The carrier transport layer 106L2 is disposed below the organic emitting layer 106L3. The organic emitting layer 106L3 continuously covers the carrier transport layer 106L2. The organic emitting layer 106L3 covers a plurality of bumps 105 and a plurality of first electrodes 104. Selectively, the organic emitting layer 106L3 is in contact with the carrier transport layer 106L2. The organic emitting layer 106L3 is configured to emit a first color.

[0059] In some embodiments, the organic emitting layer 106L3 has an absorption rate of 50% or more for a specific wavelength; in some embodiments, the organic emitting layer 106L3 has an absorption rate of 60% or more for a specific wavelength; in some embodiments, the organic emitting layer 106L3 has an absorption rate of 70% or more for a specific wavelength; in some embodiments, the organic emitting layer 106L3 has an absorption rate of 80% or more for a specific wavelength; in some embodiments, the organic emitting layer 106L3 has an absorption rate of 90% or more for a specific wavelength; and in some embodiments, the organic emitting layer 106L3 has an absorption rate of 95% or more for a specific wavelength. In some embodiments, the specific wavelength is not greater than 400 nm; in some embodiments, the specific wavelength is not greater than 350 nm; in some embodiments, the specific wavelength is not greater than 300 nm; in some embodiments, the specific wavelength is not greater than 250 nm; in some embodiments, the specific wavelength is not greater than 200 nm; in some embodiments, the specific wavelength is not greater than 150 nm; and in some embodiments, the specific wavelength is not greater than 100 nm.

[0060] In some embodiments, at least one of the carrier transport layer 106L2 and the organic emission layer 106L3 comprises an organic material. The organic material may include a molecular structure having a resonance structure. The organic material may be selected from the group consisting of spiro-triarylamines, bis-triarylamines, and combinations thereof. In some embodiments, at least one of the carrier transport layer 106L2 and the organic emission layer 106L3 comprises a spiro-triarylamine. In some embodiments, at least one of the carrier transport layer 106L2 and the organic emission layer 106L3 comprises a bis-triarylamine.

[0061] An organic carrier transport layer 106L4 is disposed on the exposed surfaces of the capping layer 102, bumps 105, and first electrode 104. The organic carrier transport layer 106L4 is disposed above and completely covers the organic emitter layer 106L3. The organic emitter layer 106L3 is disposed below the organic carrier transport layer 106L4. The organic carrier transport layer 106L4 continuously covers the organic emitter layer 106L3. The organic carrier transport layer 106L4 covers a plurality of bumps 105 and a plurality of first electrodes 104. Selectively, the organic carrier transport layer 106L4 is in contact with the organic emitter layer 106L3.

[0062] The second electrode 106D is disposed on the exposed surfaces of the cover layer 102, the bump 105, and the first electrode 104. The second electrode 106D is located above and completely covers the organic carrier transport layer 106L4. In some cases, the second electrode 106D is patterned to cover only the effective light-emitting area of ​​each light-emitting pixel. In some cases, the second electrode 106D is in contact with the organic carrier transport layer 106L4.

[0063] The second electrode 106D can have approximately to approximately The thickness. In some embodiments, the second electrode 106D may have approximately to approximately The thickness. In some embodiments, the second electrode 106D may have approximately to approximately The thickness. In some embodiments, the second electrode 106D may have approximately to approximately The thickness. In some embodiments, the second electrode 106D may have approximately to approximately The thickness. In some embodiments, the second electrode 106D may have approximately to approximately The thickness.

[0064] In some embodiments, the second electrode 106D may be a cathode. The second electrode 106D may be a metallic material, such as Ag, Mg, etc. In some embodiments, the second electrode 106D comprises ITO (indium tin oxide) or IZO (indium zinc oxide). In some embodiments, the second electrode 106D has a composite structure. For example, the second electrode 106D has a conductive film and a transparent conductive film thereon. The conductive film is located between the transparent conductive film and the organic carrier transport layer 106L4. In some embodiments, the conductive film comprises aluminum, gold, silver, copper, magnesium, molybdenum, etc. In some embodiments, the transparent conductive film comprises indium, tin, graphene, zinc, oxygen, etc. In some embodiments, the transparent conductive film is ITO (indium tin oxide). In some embodiments, the transparent conductive film is IZO (indium zinc oxide). In some embodiments, the transparent conductive film is located between the conductive film and the organic carrier transport layer 106L4.

[0065] A plurality of light-emitting units are separated by bumps 105. These light-emitting units include a first light-emitting unit 30a, a second light-emitting unit 30b, and a third light-emitting unit 30c. In some embodiments, the first light-emitting unit 30a, the second light-emitting unit 30b, and the third light-emitting unit 30c are adjacent to each other. In some embodiments, the second light-emitting unit 30b and the third light-emitting unit 30c have a similar structure to the first light-emitting unit 30a. Furthermore, although the first light-emitting unit 30a, the second light-emitting unit 30b, and the third light-emitting unit 30c are illustrated as having similar features, this is merely illustrative and is not intended to limit these embodiments. The first light-emitting unit 30a, the second light-emitting unit 30b, and the third light-emitting unit 30c may have similar structures or different structures to meet desired functional requirements.

[0066] The first light-emitting unit 30a, the second light-emitting unit 30b, and the third light-emitting unit 30c may differ from each other at least in the thickness of the organic light-emitting stack layer. In some embodiments, the first light-emitting unit 30a emits green light, the second light-emitting unit 30b emits red light, and the third light-emitting unit 30c emits blue light.

[0067] In some embodiments, light-emitting units 30a, 30b, and 30c are configured to be divided into at least three different groups, each group emitting a color different from the colors emitted by the other groups. The thickness of each organic light-emitting stack layer may be related to the color displayed by the corresponding light-emitting unit 30a, 30b, and 30c. In some embodiments, compared to other light-emitting units configured to emit a different color, the first light-emitting unit 30a emits green light, and the organic light-emitting stack layer of the first light-emitting unit 30a may have the smallest thickness. In some embodiments, compared to other light-emitting units configured to emit a different color, the second light-emitting unit 30b emits red light, and the thickness of the organic light-emitting stack layer in the second light-emitting unit 30b may be between the thickness of the organic light-emitting stack layer in the first light-emitting unit 30a and the thickness of the organic light-emitting stack layer in the third light-emitting unit 30c. In some embodiments, compared to other light-emitting units configured to emit a different color, the third light-emitting unit 30c emits blue light, and the organic light-emitting stack layer of the third light-emitting unit 30c may have the largest thickness. The organic light-emitting stack layer of the first light-emitting unit 30a, the second light-emitting unit 30b, and the third light-emitting unit 30c can be formed by various processes such as vapor deposition, liquid jetting, or inkjet printing.

[0068] In some embodiments, the first, second, and third light-emitting units 30a, 30b, and 30c may differ from each other at least in the thickness of the carrier transport layer of the first, second, and third light-emitting units 30a, 30b, and 30c.

[0069] In some embodiments, light-emitting units 30a, 30b, and 30c are configured to be divided into at least three different groups, each group emitting a color different from the colors emitted by the other groups. The thickness of the carrier transport layer may be associated with the color displayed by the respective light-emitting unit 30a. In some embodiments, compared to other light-emitting units configured to emit a different color, the first light-emitting unit 30a emits green light, and the carrier transport layer of the first light-emitting unit 30a may have the smallest thickness. In some embodiments, compared to other light-emitting units configured to emit a different color, the second light-emitting unit 30b emits red light, and the thickness of the carrier transport layer in the second light-emitting unit 30b may be between the thickness of the carrier transport layer in the first light-emitting unit 30a and the thickness of the carrier transport layer in the third light-emitting unit 30c. In some embodiments, compared to other light-emitting units configured to emit a different color, the third light-emitting unit 30c emits blue light, and the carrier transport layer of the third light-emitting unit 30c may have the largest thickness.

[0070] Figures 9A to 9J The illustration shows different stages of the manufacturing process of the light-emitting element 10 according to one embodiment.

[0071] exist Figure 9AIn the process, a substrate 100 is provided, which has an upper surface 100s1 and a lower surface 100s2.

[0072] exist Figures 9B to 9F In this embodiment, a plurality of light-shielding layers 110 are disposed on a substrate 100. Each light-shielding layer 110 is configured on the same side of the substrate. Each light-shielding layer 110 contacts the upper surface 100s1 of the substrate 101. Each light-shielding layer 110 is separated from each other. The lower surface 101s2 of the light-shielding layer 110 directly contacts the upper surface 100s1 of the substrate 101.

[0073] Setting up a plurality of light-blocking layers 110 includes laying a plurality of bonding materials at intervals to form a first bonding layer 1121 (e.g., ...). Figure 9B As shown), a light-absorbing material is then applied to each of the first bonding layers 1121 to form a first light-absorbing layer 1122 (as shown). Figure 9C As shown, the first bonding layer 1121 and the first light-absorbing layer 1122 constitute the first anti-reflection layer 112, and more first bonding layers 1121 and first light-absorbing layers 1122 can be laid in an alternating manner.

[0074] The provision of a plurality of light-blocking layers 110 further includes the provision of a metal layer 114 on the first light-absorbing layer 1122 (e.g., ...). Figure 9D As shown), a light-absorbing material is then sequentially applied to the metal layer 114 to form a second light-absorbing layer 1162 (as shown). Figure 9E (as shown) and applying bonding material to form a second bonding layer 1161 (as shown) Figure 9F As shown), the second light-absorbing layer 1162 and the second bonding layer 1161 constitute the second anti-reflection layer 114. More second light-absorbing layers 1162 and second bonding layers 1161 can be laid in an alternating manner, as long as the top layer of the second anti-reflection layer 116 is the second bonding layer 1161.

[0075] The first bonding layer 1121, the first light-absorbing layer 1122, the metal layer 114, the second light-absorbing layer 1162, and the second bonding layer 116 can be formed by any of the following methods: vapor deposition, sputtering, atomic layer deposition, thermal evaporation, coating, or spraying.

[0076] exist Figure 9G In this process, a cover layer 102 is disposed on each of the light-shielding layers 110. The cover layer 102 surrounds the upper surface 101s1 and two side surfaces 101s3 and 101s4 of each of the plurality of light-shielding layers 110. The cover layer 102 contacts the substrate 100. The cover layer 102 is formed on the plurality of light-shielding layers 110 by one of chemical vapor deposition (CVD), physical vapor deposition (PVD), and spin coating (SOG). The material contained in the cover layer 102 may be the same as the material contained in the second bonding layer 1161.

[0077] exist Figure 9H In this process, a plurality of first electrodes 104 are disposed on the cover layer 102. Each first electrode 104 is configured to be electrically connected to the substrate 100. Each first electrode 104 directly contacts the upper surface 102s1 of the cover layer 102. The array pattern of the first electrodes 104 is designed with regard to the arrangement of pixels.

[0078] exist Figure 9I In this embodiment, a plurality of bumps 105 are provided on the cover layer 102. The positions of the plurality of bumps 105 may correspond one-to-one with the positions of the plurality of light-shielding layers 110. In some embodiments, the width of each bump 105 may substantially correspond to the width of the light-shielding layer 110. In some embodiments, the width of each bump 105 may be smaller than the width of the corresponding light-shielding layer 110. In some embodiments, the width of each bump 105 may be larger than the width of the corresponding light-shielding layer 110. In some embodiments, the edge of each bump 105 may be aligned with the edge of the corresponding light-shielding layer 110. Each bump 105 is formed on a portion of the upper surface of the first electrode 104 and covers one side surface of the first electrode 104. The bumps 105 partially cover each of the first electrodes 104. The bumps 105 may be formed in different shapes. In some embodiments, the bumps 105 have curved surfaces. In some embodiments, the shape of the bumps 105 is trapezoidal. After the bump 105 is formed, a cleaning operation is performed to clean the exposed surfaces of the bump 105 and the first electrode 104. In one embodiment, during the cleaning operation, deionized water is heated to a temperature between 30°C and 80°C. After the temperature of the deionized water rises to a predetermined temperature, the deionized water is directed to the exposed surfaces of the bump 105 and the first electrode 104.

[0079] In some embodiments, ultrasound is used during the cleaning operation. Ultrasound waves are introduced into a cleaning agent (e.g., water or isopropyl alcohol (IPA)). In some embodiments, carbon dioxide is introduced into the cleaning agent. After the cleaning operation, the cleaning agent is removed from the exposed surface via a heating operation. During the heating operation, the substrate 100 and bump 105 can be heated to a temperature between 80°C and 110°C. In some examples, compressed air is directed to the exposed surface to help remove cleaning agent residue while heating. After the heating operation, the exposed surface can be treated with O2, N2, or Ar plasma. Plasma is used to roughen the exposed surface. In some embodiments, ozone is used to condition the surface state of the exposed surface.

[0080] like Figure 9JAs shown, a carrier injection layer 106L1 is disposed on the exposed surfaces of the bumps 105, the cover layer 102, and the first electrode 104. The carrier injection layer 106L1 is continuously lining along the exposed surfaces. More specifically, the exposed surfaces of each first electrode 104 are configured as the effective light-emitting area of ​​a light-emitting unit (i.e., a pixel). In this embodiment, all light-emitting units use the carrier injection layer 106L1. In some embodiments, the carrier injection layer 106L1 is used for hole injection. In some embodiments, the carrier injection layer 106L1 is used for electron injection. The carrier injection layer 106L1 continuously covers the exposed surfaces of the plurality of bumps 105 and the first electrodes 104. Optionally, the carrier injection layer 106L1 is in contact with the bumps 105. In one embodiment, the carrier injection layer 106L1 is in contact with the first electrode 104. In some embodiments, the carrier injection layer 106L1 is organic.

[0081] A carrier transport layer 106L2 is disposed on the exposed surfaces of the bumps 105, the cover layer 102, and the first electrode 104. A carrier injection layer 106L1 is disposed beneath the carrier transport layer 106L2. The carrier transport layer 106L2 is continuously lined along the carrier injection layer 106L1. In this embodiment, all light-emitting units use the carrier transport layer 106L2. In some embodiments, the carrier transport layer 106L2 is used for hole injection. In some embodiments, the carrier transport layer 106L2 is used for electron injection. The carrier transport layer 106L2 continuously covers the plurality of bumps 105 and the first electrode 104. Optionally, the carrier transport layer 106L2 is in contact with the carrier injection layer 106L1. In some embodiments, the carrier transport layer 106L2 is organic. An organic emitting layer 106L3 is disposed on the exposed surfaces of the bumps 105, the cover layer 102, and the first electrode 104. Organic emission layer 106L3 covers carrier transport layer 106L2. Organic emission layer 106L3 completely covers exposed carrier transport layer 106L2. Organic emission layer 106L3 is configured to emit a first color.

[0082] like Figure 9JAs shown, an organic carrier transport layer 106L4 is disposed on the organic emitting layer 106L3. The organic carrier transport layer 106L4 may be a hole or electron transport layer. In some embodiments, the organic carrier transport layer 106L4 and the carrier transport layer 106L2 are each configured with opposite valence states. In some embodiments, a second electrode 106D is disposed on the organic carrier transport layer 106L4. The second electrode 106D covers the organic carrier transport layer 106L4. The second electrode 106D may be a metallic material, such as Ag, Mg, etc. In some embodiments, the second electrode 106D includes ITO (indium tin oxide) or IZO (indium zinc oxide). In some embodiments, viewed in cross-sectional view, each light-emitting unit (i.e., pixel) has an independent second electrode 106D.

[0083] Repeatable, such as Figure 9A-9J The operations shown are used to form light-emitting units of different colors.

[0084] This application allows the pattern to be adjusted into the desired shape according to actual needs.

[0085] The foregoing outlines some features of the embodiments, thus enabling those skilled in the art to better understand various aspects of this disclosure. Those skilled in the art should understand that this disclosure can be readily used as a basis for designing or modifying other processes and structures to achieve the same purpose and / or the same advantages as the embodiments described in this application. Those skilled in the art should also understand that this equivalent architecture does not depart from the spirit and scope of this disclosure, and that various changes, substitutions, and replacements can be made without departing from the spirit and scope of this disclosure.

[0086] Symbol Explanation

[0087] 10 Light-emitting elements

[0088] 10A Light Emitting Element

[0089] 100 substrates

[0090] 100s1 upper surface

[0091] 100s2 lower surface

[0092] 102 Covering layer

[0093] 104 First Electrode

[0094] 104T thickness

[0095] 105 bumps

[0096] 106 Organic Light Emitting Stack Layers

[0097] 106L1 carrier injection layer

[0098] 106L2 carrier transport layer

[0099] 106L3 organic emission layer

[0100] 106L4 Organic Carrier Transport Layer

[0101] 106D Second Electrode

[0102] 110 Light-blocking layer

[0103] 112 First anti-reflective layer

[0104] 1121 First bonding layer

[0105] 1122 First light-absorbing layer

[0106] 1123 First Additional Material Layer

[0107] 114 Metal Layer

[0108] 116 Second Anti-reflective Layer

[0109] 1161 Second bonding layer

[0110] 1162 Second light-absorbing layer

[0111] 1163 Second Additional Material Layer

[0112] 20 Light-emitting layers

[0113] 21 Spacer

[0114] 30 Light-emitting elements

[0115] 30a Light Emitting Unit

[0116] 30b Light-emitting unit

[0117] 30c light-emitting unit

[0118] 40 Overlying layer

[0119] H0 thickness

[0120] H1 thickness

[0121] H2 thickness

[0122] H4 thickness

[0123] h1 thickness

[0124] h2 thickness

[0125] h3 thickness

[0126] W1 Distance

[0127] W2 distance.

Claims

1. A light-emitting element, characterized in that, The light-emitting element includes: substrate; A plurality of light-shielding layers are disposed at intervals on a first surface of the substrate, wherein each of the plurality of light-shielding layers includes: A first anti-reflective layer, the bottom surface of which is disposed on the first surface of the substrate, includes at least one first bonding layer and at least one first light-absorbing layer. A metal layer disposed on the first antireflective layer; and A second anti-reflective layer is disposed on the metal layer, and includes at least one second bonding layer and at least one second light-absorbing layer, wherein one of the at least one second bonding layer serves as the top layer of the second anti-reflective layer; A cover layer that covers the first surface of the substrate and the plurality of light-shielding layers; and A plurality of bumps are disposed on the cover layer, and each of the plurality of bumps has an organic light-emitting unit between two adjacent bumps.

2. The light-emitting element as described in claim 1, characterized in that, The second bonding layer, which serves as the top layer of the second antireflective layer, contains the same material as the cover layer.

3. The light-emitting element as described in claim 1 or 2, characterized in that, The first bonding layer contains the same material as the second bonding layer, and the materials contained in the first bonding layer and the second bonding layer are the same as the materials contained in the cover layer.

4. The light-emitting element as described in claim 1 or 2, characterized in that, The equivalent refractive index of the first light-absorbing layer is greater than that of the first bonding layer; and the equivalent refractive index of the second light-absorbing layer is greater than that of the second bonding layer.

5. The light-emitting element as described in claim 1 or 2, characterized in that, The first light-absorbing layer contains a metal oxide and the second light-absorbing layer contains a metal oxide.

6. The light-emitting element as described in claim 1 or 2, characterized in that, The thickness of the first anti-reflective layer is substantially the same as the thickness of the second anti-reflective layer.

7. The light-emitting element as described in claim 1 or 2, characterized in that, The ratio of the thickness of the first anti-reflective layer to the thickness of the metal layer is in the range of about 1:1 to about 3:1; and the ratio of the thickness of the second anti-reflective layer to the thickness of the metal layer is in the range of about 1:1 to about 3:

1.

8. The light-emitting element as described in claim 1 or 2, characterized in that, The positions of the plurality of light-blocking layers correspond one-to-one with the positions of the plurality of bumps.

9. The light-emitting element as described in claim 1 or 2, characterized in that, The width of each of the plurality of light-blocking layers is greater than the width of each of the plurality of bumps.

10. The light-emitting element as described in claim 1 or 2, characterized in that, One of the at least one first bonding layer of the first antireflective layer serves as the bottom layer of the first antireflective layer, which is in direct contact with the substrate, and one of the at least one first light-absorbing layer serves as the top layer of the first antireflective layer, which is in direct contact with the metal layer.

11. A method for manufacturing a light-emitting element, comprising: Provide substrate; Forming a plurality of first anti-reflective layers on the substrate includes applying at least one bonding material and at least one light-absorbing material, wherein the plurality of first anti-reflective layers are separated from each other by a distance. A plurality of metal layers are formed on the plurality of first anti-reflective layers; Forming a plurality of second anti-reflective layers on the plurality of metal layers includes applying at least one bonding material and at least one light-absorbing material, wherein the top layer of the plurality of second anti-reflective layers is one of the at least one bonding material; A cover layer is applied to cover the top surface of the plurality of second antireflective layers, the substrate portion exposed between the plurality of first antireflective layers, and the side surfaces of the plurality of first antireflective layers, the plurality of metal layers, and the plurality of second antireflective layers; A plurality of organic light-emitting units and a plurality of bumps are alternately arranged on the cover layer.

12. The manufacturing method as described in claim 11, characterized in that, The bonding material is the same as the material forming the cover layer.

13. The manufacturing method as described in claim 11 or 12, characterized in that, The light-absorbing material is a metal oxide.

14. The manufacturing method as described in claim 11 or 12, characterized in that, Each of the plurality of first antireflective layers comprises sequentially applying a layer of the bonding material, a layer of the light-absorbing material, another layer of the bonding material, and a third layer of the light-absorbing material to the substrate; and Each of the plurality of second antireflective layers comprises sequentially applying a layer of the light-absorbing material, a layer of the bonding material, another layer of the light-absorbing material, and a layer of the bonding material onto the metal layer.

15. The manufacturing method as described in claim 11 or 12, characterized in that, The plurality of first anti-reflective layers, the plurality of metal layers, and the plurality of second anti-reflective layers are formed by a vapor deposition process.

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