Light emitting element

Abstract

A light emitting element includes a substrate, a plurality of light blocking layers, and a plurality of first electrode layers. The plurality of light blocking layers are spaced apart on a first surface of the substrate; the plurality of first electrode layers are disposed on the first surface of the substrate, each of the plurality of first electrodes being disposed between two adjacent light blocking layers, wherein each of the plurality of light blocking layers includes a first anti-reflective layer, a non-conductive layer, and a second anti-reflective layer, wherein the first anti-reflective layer is disposed on the first surface of the substrate, the non-conductive layer covers the first anti-reflective layer, and the second anti-reflective layer at least partially covers the non-conductive layer such that the non-conductive layer is disposed between the first anti-reflective layer and the second anti-reflective layer, and the non-conductive layer includes an oxide.

Description

Technical Field

[0001] This disclosure relates to a light-emitting element, and more particularly to an organic light-emitting element. Background Technology

[0002] Organic light-emitting displays (OLEDs) are widely used in high-end electronic devices. However, due to limitations in current technology, the luminous efficiency and quality of light-emitting materials cannot be effectively controlled, resulting in less-than-expected optical performance of the devices. Summary of the Invention

[0003] In this disclosure, a light-emitting element includes a substrate, a plurality of light-shielding layers, and a plurality of first electrode layers. The plurality of light-shielding layers are disposed at intervals on a first surface of the substrate; the plurality of first electrode layers are disposed on the first surface of the substrate, each of the plurality of first electrodes being disposed between two adjacent light-shielding layers, wherein each of the plurality of light-shielding layers includes a first anti-reflective layer, a non-conductive layer, and a second anti-reflective layer, wherein the first anti-reflective layer is disposed on the first surface of the substrate, the non-conductive layer covers the first anti-reflective layer, and the second anti-reflective layer at least partially covers the non-conductive layer, such that the non-conductive layer is disposed between the first anti-reflective layer and the second anti-reflective layer, and the non-conductive layer includes an oxide.

[0004] In this disclosure, a method for fabricating a light-emitting element includes: providing a substrate; sequentially applying a first anti-reflective material, a non-conductive material, and a second anti-reflective material to a first surface of the substrate; removing portions of the first anti-reflective material, the non-conductive material, and the second anti-reflective material to form a plurality of trenches at intervals, such that a plurality of light-shielding layers are formed between the plurality of trenches, each of the plurality of light-shielding layers including a first anti-reflective layer formed of the first anti-reflective material, a non-conductive layer formed of the non-conductive material, and a second anti-reflective layer formed of the second anti-reflective material, the non-conductive layer including an oxide; and forming a plurality of first electrodes at intervals, such that the plurality of first electrodes cover the first surface of the substrate exposed between the plurality of trenches and the sidewalls and part of the top of adjacent light-shielding layers.

[0005] In some embodiments, the oxide includes saturated oxides and unsaturated oxides.

[0006] In some embodiments, the non-conductive layer comprises unsaturated silicon oxide, unsaturated titanium oxide, unsaturated tantalum oxide, unsaturated aluminum oxide, or a combination thereof.

[0007] In some embodiments, the top width of each of the plurality of light-shielding layers is substantially equal to or less than its bottom width, such that the angle between the sidewall of each of the plurality of light-shielding layers and the first surface of the substrate is greater than 0 degrees to about 90 degrees.

[0008] In some embodiments, the top width of the first antireflective layer is substantially equal to or less than its bottom width, such that the angle between the sidewalls of each of the plurality of light-shielding layers and the first surface of the substrate is greater than 0 degrees to about 90 degrees.

[0009] In some embodiments, at least two ends of the non-conductive layer are in contact with the first electrode layer.

[0010] In some embodiments, the second anti-reflective layer completely covers the non-conductive layer, such that both ends of the second anti-reflective layer are in contact with the first surface of the substrate.

[0011] In some embodiments, the thickness of the non-conductive layer is greater than the thickness of the second anti-reflective layer; and the thickness of the non-conductive layer is greater than the thickness of the first anti-reflective layer.

[0012] In some embodiments, each of the plurality of first electrodes includes a central portion and two end portions extending to both sides from the central portion, the central portion being disposed between two adjacent light-shielding layers, and the two end portions spanning the sidewalls and part of the top of the adjacent light-shielding layers.

[0013] In some embodiments, the light-emitting element further includes: a plurality of bump portions covering the two ends of the first electrode and the top of the light-shielding layer exposed between the plurality of first electrodes.

[0014] In some embodiments, a plurality of bumps partially cover the two ends of the first electrode and the top of the light-shielding layer of the area not covered by the two ends of the first electrode.

[0015] In some embodiments, applying the non-conductive material comprises performing a vapor deposition process under low oxygen supply conditions, such that the non-conductive layer comprises an unsaturated oxide.

[0016] In some embodiments, the non-conductive material includes unsaturated silicon oxide, unsaturated titanium oxide, unsaturated tantalum oxide, unsaturated aluminum oxide, or a combination thereof.

[0017] In some embodiments, removing portions of the first antireflective material, the nonconductive material, and the second antireflective material includes etching the first antireflective material, the nonconductive material, and the second antireflective material such that the top width of each of the plurality of light-blocking layers is substantially equal to or less than its bottom width.

[0018] In some embodiments, the fabrication method further includes: forming a plurality of bumps on a plurality of light-shielding layers, partially covering the first electrode; forming a light-emitting layer on the plurality of first electrodes and the plurality of bumps; and forming a second electrode layer on the light-emitting layer. Attached Figure Description

[0019] Figure 1 This is a top view illustrating the intermediate products of an organic light-emitting element.

[0020] Figure 2 For example, along Figure 1 A cross-sectional view of line AA in the diagram.

[0021] Figure 3 For example, along Figure 1 A partial cross-sectional view of line AA in the diagram.

[0022] Figure 4 For example, along Figure 1 A partial cross-sectional view of line AA in the diagram.

[0023] Figures 5 to 11 The illustration depicts different stages of the manufacturing process of a light-emitting element according to one embodiment. Detailed Implementation

[0024] Figure 1 This is a top view illustrating an intermediate product of the light-emitting element 10. The light-emitting element 10 has a light-emitting layer 20 and an overlay layer 40 located above the light-emitting layer 20. For the light-emitting layer 20, spacers 30 may be designed to provide an array of recesses for accommodating an array of light-emitting pixels. In some embodiments, the spacers 30 may comprise a photosensitizing material.

[0025] Figure 2 For example, along Figure 1 The diagram shows a cross-sectional view of line AA, illustrating only the light-emitting region. For simplicity, the upper cover layer 40 is omitted here. In some embodiments, the light-emitting element 10 includes a substrate 100, a plurality of light-shielding layers 110 above the substrate 100, a plurality of first electrode layers 120, a plurality of bumps 130, and a light-emitting array 200.

[0026] In some embodiments, substrate 100 may include a thin-film transistor (TFT) array configured to correspond to light-emitting pixels in light-emitting layer 20. Substrate 100 may include a plurality of capacitors. In some embodiments, more than one transistor is configured to form a circuit with a capacitor and a light-emitting pixel.

[0027] In some embodiments, light-blocking layers 110 are spaced apart on the first surface 100s1 of the substrate 100. In this disclosure, the pattern of the light-blocking layers 110 is designed according to a pixel arrangement, and the patterned light-blocking layers 110 may be referred to as pixel-defined layers (PDLs). A thickness H0 is present between the bottom surface 118 and the top surface 119 of the light-blocking layers 110, and the width W1 of the bottom surface 118 of the light-blocking layers 110 is substantially equal to or greater than the width W2 of the top surface 119 of the light-blocking layers 110. In some embodiments, the width W1 of the bottom surface 118 of the light-blocking layers 110 is substantially equal to the width W2 of the top surface 119 of the light-blocking layers 110, and the light-blocking layers 110 have a rectangular cross-section. In some embodiments, the width W1 of the bottom surface 118 of the light-blocking layers 110 is greater than the width W2 of the top surface 119 of the light-blocking layers 110, and the light-blocking layers 110 have a trapezoidal cross-section, such as... Figures 2 to 4 As shown. In some embodiments, the ratio of the width W1 of the bottom surface 118 of the light-blocking layer 110 to the width W2 of the top surface 119 of the light-blocking layer 110 is approximately 10:1 to approximately 1:1. In some embodiments, the ratio of the width W1 of the bottom surface 118 of the light-blocking layer 110 to the width W2 of the top surface 119 of the light-blocking layer 110 is approximately 7:1 to approximately 1:1. In some embodiments, the ratio of the width W1 of the bottom surface 118 of the light-blocking layer 110 to the width W2 of the top surface 119 of the light-blocking layer 110 is approximately 3:1 to approximately 1:1.

[0028] In some embodiments, the angle θ1 between the sidewall 117 of the light-shielding layer 110 and the first surface 100s1 of the substrate 100 is greater than 0 degrees to about 90 degrees. In some embodiments, the angle θ1 between the sidewall 117 of the light-shielding layer 110 and the first surface 100s1 of the substrate 100 is about 20 degrees to about 70 degrees. In some embodiments, the angle θ1 between the sidewall 117 of the light-shielding layer 110 and the first surface 100s1 of the substrate 100 is about 35 degrees to about 60 degrees.

[0029] In some embodiments, the light-blocking layer 110 includes a first anti-reflection layer 111, a non-conductive layer 112, and a second anti-reflection layer 113. The first anti-reflection layer 111 of the light-blocking layer 110 is directly disposed on the first surface 100s1 of the substrate 100. The non-conductive layer 112 of the light-blocking layer 110 covers the first anti-reflection layer 111 of the light-blocking layer 110, and the second anti-reflection layer 113 of the light-blocking layer 110. The first anti-reflection layer 111 includes a top surface 1111 substantially parallel to the first surface 100s1 of the substrate 100 and a side surface 1112 that gradually widens from the top surface 1111 of the first anti-reflection layer 111 toward the first surface 100s1 of the substrate 100. The non-conductive layer 112 of the light-blocking layer 110 is disposed on the top surface 1111 and the side surface 1112 of the first anti-reflection layer 111 of the light-blocking layer 110, such that both ends of the non-conductive layer 112 are in contact with the first surface 100s1 of the substrate 100. The second antireflective layer 113 of the light-blocking layer 110 is laid on top of the non-conductive layer 112 of the light-blocking layer 110 and at least partially covers the side surface 1122 of the non-conductive layer 112 of the light-blocking layer 110. In some embodiments, the light-blocking layer 110 is composed of a first antireflective layer 111, a non-conductive layer 112 and a second antireflective layer 113.

[0030] like Figure 2 As shown, the second antireflective layer 113 of the light-shielding layer 110 completely covers the non-conductive layer 112 of the light-shielding layer 110. The second antireflective layer 113 of the light-shielding layer 110 includes a top surface 1131 that completely covers the top surface 1131 of the non-conductive layer 112 of the light-shielding layer 110 and a side surface 1132 that completely covers the side surface 1122 of the non-conductive layer 112 of the light-shielding layer 110, such that both ends of the second antireflective layer 113 of the light-shielding layer 110 are in contact with the first surface 100s1 of the substrate 100, and the side surface 1132 of the second antireflective layer 113 of the light-shielding layer 110 forms the sidewall 117 of the light-shielding layer 110. In some embodiments, the first electrode layer 120 directly contacts the light-shielding layer 110. In some embodiments, the first electrode layer 120 directly contacts the second antireflective layer 113. In some embodiments, there is no insulating layer between the first electrode layer 120 and the light-shielding layer 110. In some embodiments, there is no insulating layer between the first electrode layer 120 and the second antireflective layer 113. The insulating layer is, for example, a silicon oxide layer.

[0031] Figure 3 For example, along Figure 1 A partial cross-sectional view of line AA in the diagram shows... Figure 2 Another embodiment at the boxed area. For example... Figure 3As shown, the second antireflective layer 113 only partially covers the side surface 1122 of the non-conductive layer 112, the top surface 1131 of the second antireflective layer 113 completely covers the top surface 1121 of the non-conductive layer 112, and the side surface 1132 of the second antireflective layer 113 partially covers the side surface 1122 of the non-conductive layer 112. Therefore, the two ends of the second antireflective layer 113 do not contact the first surface 100s1 of the substrate 100. The side surface 1132 of the second antireflective layer 113 and the partial side surface 1122 of the non-conductive layer 112 of the light-shielding layer 110 constitute the sidewall 117 of the light-shielding layer 110. In some embodiments, the first electrode layer 120 directly contacts the non-conductive layer 112 and the second antireflective layer 113. In some embodiments, there is no isolation layer between the first electrode layer 120 and the light-shielding layer 110. In some embodiments, there is no isolation layer between the first electrode layer 120 and the non-conductive layer 112. The isolation layer is, for example, a silicon oxide layer.

[0032] Figure 4 For example, along Figure 1 A partial cross-sectional view of line AA in the diagram shows... Figure 2 Another embodiment at the boxed area. For example... Figure 4 As shown, the second anti-reflective layer 113 only partially covers the side surface 1122 of the non-conductive layer 112, and the top surface 1131 of the second anti-reflective layer 113 completely covers the top surface 1131 of the non-conductive layer 112. The side surface 1132 of the second anti-reflective layer 113 and the side surface 1122 of the non-conductive layer 112 of the light-shielding layer 110 constitute the sidewall 117 of the light-shielding layer 110.

[0033] In some embodiments, the thickness H1 of the first antireflective layer 111 is substantially equal to or less than the thickness H2 of the non-conductive layer 112. In some embodiments, the ratio of the thickness H1 of the first antireflective layer 111 to the thickness H2 of the non-conductive layer 112 is approximately 1:1 to approximately 1:15. In some embodiments, the ratio of the thickness H1 of the first antireflective layer 111 to the thickness H2 of the non-conductive layer 112 is approximately 1:2 to approximately 1:10. In some embodiments, the ratio of the thickness H1 of the first antireflective layer 111 to the thickness H2 of the non-conductive layer 112 is approximately 1:3 to approximately 1:5. In some embodiments, the thickness H3 of the second antireflective layer 113 is substantially equal to or less than the thickness H2 of the non-conductive layer 112. In some embodiments, the ratio of the thickness H3 of the second antireflective layer 113 to the thickness H2 of the non-conductive layer 112 is approximately 1:1 to approximately 1:15. In some embodiments, the ratio of the thickness H3 of the second antireflective layer 113 to the thickness H2 of the non-conductive layer 112 is approximately 1:2 to approximately 1:10. In some embodiments, the ratio of the thickness H3 of the second antireflective layer 113 to the thickness H2 of the nonconductive layer 112 is about 1:3 to about 1:5.

[0034] In some embodiments, the thickness H1 of the first antireflective layer 111 is substantially equal to or less than the thickness H3 of the second antireflective layer 113. In some embodiments, the ratio of the thickness H1 of the first antireflective layer 111 to the thickness H3 of the second antireflective layer 113 is approximately 1:1 to approximately 1:5. In some embodiments, the ratio of the thickness H1 of the first antireflective layer 111 to the thickness H3 of the second antireflective layer 113 is approximately 4:5 to approximately 3:10. In some embodiments, the ratio of the thickness H1 of the first antireflective layer 111 to the thickness H3 of the second antireflective layer 113 is approximately 7:10 to approximately 1:2.

[0035] In some embodiments, the first antireflective layer 111 of the light-blocking layer 110 comprises a light-absorbing material, including but not limited to metal oxides, carbon black materials, such as carbon black nanoparticles, carbon black-containing conductive fibers, or the like, which have an absorption rate of 90%, 95%, 99%, 99.5%, or 99.9% or higher for visible light. The non-conductive layer 112 of the light-blocking layer 110 comprises saturated oxides and unsaturated oxides. Unsaturated oxides include, but are not limited to, unsaturated silicon oxide, unsaturated titanium oxide, unsaturated tantalum oxide, unsaturated aluminum oxide, or combinations thereof. The non-conductive layer 112 may be opaque, and different saturated oxides and unsaturated oxides may be different colors, absorbing different colors of light. The types of saturated oxides and unsaturated oxides can be selected as needed. The second antireflective layer 113 of the light-blocking layer 110 includes a light-absorbing material, including but not limited to metal oxides, carbon black materials, such as carbon black nanoparticles, carbon black-containing conductive fibers, or the like, which have an absorption rate of 90%, 95%, 99%, 99.5%, or 99.9% or higher for visible light. In some embodiments, the first antireflective layer 111, the non-conductive layer 112, and / or the second antireflective layer 113 in the light-blocking layer 110 can be formed by any of vapor deposition, sputtering, atomic layer deposition, thermal evaporation, coating, or spraying.

[0036] A plurality of first electrode layers 120 are disposed on a first surface 100s1 of a substrate 100. Each of the plurality of first electrode layers 120 includes a central portion 121 formed between light-shielding layers 110 and end portions 122 extending laterally from the central portion 121. In some embodiments, the shape of the central portion 121 of the first electrode layer 120 may vary depending on the shape of the sidewalls 117 of the light-shielding layer 110. In some embodiments, the width W3 of the bottom surface 1211 of the central portion 121 of the first electrode layer 120 is substantially equal to or less than the width W4 of the top surface 1212 of the central portion 121 of the first electrode layer 120. In some embodiments, the ratio of the width W3 of the bottom surface 1211 of the central portion 121 of the first electrode layer 120 to the width W4 of the top surface 1212 of the central portion 121 of the first electrode layer 120 is approximately 1:7 to approximately 1:1. In some embodiments, the ratio of the width W3 of the bottom surface 1211 of the center portion 121 of the first electrode layer 120 to the width W4 of the top surface 1212 of the center portion 121 of the first electrode layer 120 is approximately 1:3 to approximately 1:1. In some embodiments, such as Figures 2 to 4 As shown, the width W1 of the bottom surface 1211 of the light-shielding layer 110 is smaller than the width W2 of the top surface 119 of the light-shielding layer 110. The light-shielding layer 110 has a trapezoidal cross-section, and the center part 121 of the first electrode layer 120 has an inverted trapezoidal cross-section.

[0037] In some embodiments, the width W3 of the bottom surface 1211 of the central portion 121 of the first electrode layer 120 is substantially equal to, greater than, or less than the width W1 of the bottom surface 1211 of the light-shielding layer 110. In some embodiments, the ratio of the width W3 of the bottom surface 1211 of the central portion 121 of the first electrode layer 120 to the width W1 of the bottom surface 1211 of the light-shielding layer 110 is approximately 1:1 to approximately 1:10. In some embodiments, the ratio of the width W3 of the bottom surface 1211 of the central portion 121 of the first electrode layer 120 to the width W1 of the bottom surface 1211 of the light-shielding layer 110 is approximately 1:2 to approximately 1:8. In some embodiments, the ratio of the width W3 of the bottom surface 1211 of the central portion 121 of the first electrode layer 120 to the width W1 of the bottom surface 1211 of the light-shielding layer 110 is approximately 1:3 to approximately 1:5.

[0038] In some embodiments, the width W4 of the top surface 1212 of the central portion 121 of the first electrode layer 120 is substantially equal to, greater than, or less than the width W1 of the bottom surface 1211 of the light-shielding layer 110. In some embodiments, the ratio of the width W4 of the top surface 1212 of the central portion 121 of the first electrode layer 120 to the width W1 of the bottom surface 1211 of the light-shielding layer 110 is approximately 1:1 to approximately 1:10. In some embodiments, the ratio of the width W4 of the top surface 1212 of the central portion 121 of the first electrode layer 120 to the width W1 of the bottom surface 1211 of the light-shielding layer 110 is approximately 1:2 to approximately 1:8. In some embodiments, the ratio of the width W4 of the top surface 1212 of the central portion 121 of the first electrode layer 120 to the width W1 of the bottom surface 1211 of the light-shielding layer 110 is approximately 1:3 to approximately 1:5.

[0039] In some embodiments, the thickness H4 of the central portion 121 of the first electrode layer 120 is substantially equal to, less than, or greater than the thickness H0 of the light-shielding layer 110. In some embodiments, the thickness H4 of the central portion 121 of the first electrode layer 120 is substantially equal to or greater than the thickness H0 of the light-shielding layer 110. In some embodiments, the ratio of the thickness H4 of the central portion 121 of the first electrode layer 120 to the thickness H0 of the light-shielding layer 110 is approximately 1:1 to approximately 1:10. In some embodiments, the ratio of the thickness H4 of the central portion 121 of the first electrode layer 120 to the thickness H0 of the light-shielding layer 110 is approximately 1:2 to approximately 1:8. In some embodiments, the ratio of the thickness H4 of the central portion 121 of the first electrode layer 120 to the thickness H0 of the light-shielding layer 110 is approximately 1:3 to approximately 1:6.

[0040] In some embodiments, the end portion 122 of the first electrode layer 120 spans the sidewall 117 and a portion of the top surface 119 (or top) of the adjacent light-shielding layer 110, and the angle θ2 between the sidewall of the end portion 122 of the first electrode layer 120 and the top surface 119 of the light-shielding layer 110 is greater than 0 degrees to about 90 degrees. In some embodiments, the angle θ2 between the sidewall of the end portion 122 of the first electrode layer 120 and the top surface 119 of the light-shielding layer 110 is greater than 20 degrees to about 70 degrees. In some embodiments, the angle θ2 between the sidewall of the end portion 122 of the first electrode layer 120 and the top surface 119 of the light-shielding layer 110 is greater than 35 degrees to about 60 degrees. In some embodiments, the angle θ2 between the sidewall of the end portion 122 of the first electrode layer 120 and the top surface 119 of the light-shielding layer 110 is about 90 degrees. In some embodiments, the angle θ2 between the sidewall of the end 122 of the first electrode layer 120 and the top surface 119 of the light-shielding layer 110 is less than 90 degrees. In some embodiments, the corner between the sidewall of the end 122 of the first electrode layer 120 and the top surface may be arc-shaped. In some embodiments, the light-emitting element 10 may include a plurality of bumps 130 covering the end 122 of each first electrode layer 120 to ensure that the first electrode layer 120 does not directly contact the second electrode layer 220. In some embodiments, the light-emitting element 10 may not include bumps 130, or may partially include bumps 130, so that the corner between the sidewall of the end 122 of the first electrode layer 120 and the top surface is arc-shaped, which can prevent the corner between the sidewall of the first electrode layer 120 and the top surface from piercing the organic layer 210 of the organic light-emitting array 200, thus ensuring that the first electrode layer 120 does not directly contact the second electrode layer 220.

[0041] In some embodiments, the first electrode layer 120 may comprise ITO, IZO, IGZO, AlCu alloy, or AgMo alloy, with a thickness of approximately to ITO (or IZO or IGZO) and approximately to approximately Metal films (Ag, Al, Mg, Au) with a thickness of approximately to The first electrode layer 120 is an ITO (indium tin oxide). In some embodiments, the first electrode layer 120 is a composite structure. For example, the first electrode layer 120 has a conductive film and a transparent conductive film disposed thereon. The conductive film is located between the transparent conductive film and the substrate 100. In some embodiments, the conductive film comprises aluminum, gold, silver, copper, etc. In some embodiments, the transparent conductive film comprises indium, tin, graphene, zinc, oxygen, etc. In some embodiments, the first electrode layer 120 includes a transparent conductive film. In some embodiments, the first electrode layer 120 includes ITO (indium tin oxide). In some embodiments, the first electrode layer 120 includes IZO (indium zinc oxide). In some embodiments, the first electrode layer 120 includes IGZO (indium gallium zinc oxide). In some embodiments, the roughness of the transparent conductive film... The thickness of the conductive film can be approximately to approximately Between. The thickness of the transparent conductive film can be approximately... to approximately between.

[0042] In some embodiments, the first electrode layer 120 has at least three different films. A conductive film (e.g., Al, Cu, Ag, Au, etc.) is sandwiched between two transparent conductive films. In some cases, one of the two transparent conductive films is ITO, with one side in contact with the substrate 100 and the other side in contact with the conductive film. In some cases, one of the two transparent conductive films is ITO, with one side in contact with the conductive film and the other side in contact with the bump 130 and / or the light-emitting array 200.

[0043] In some embodiments, each bump 130 is disposed on the light-shielding layer 110, protruding away from the substrate 100 and covering the peripheral region of the first electrode layer 120. In some embodiments, the positions of the plurality of bumps 130 may correspond one-to-one with the positions of the plurality of light-shielding layers 110. In some embodiments, the bumps 130 comprise silicon dioxide or the like. In some embodiments, the plurality of bumps 130 are disposed only on a portion of the light-shielding layer 110. In some embodiments, the bumps 130 partially cover the end 122 of the first electrode layer 120. The bumps 130 may have different shapes. In some embodiments, the bumps 130 have a bottom surface 131 that directly contacts the top surface 119 of the light-shielding layer 110 and a curved top surface 132 that contacts the light-emitting array 200. In some embodiments, the bumps 130 have a generally trapezoidal cross-section. In some embodiments, the bumps 130 have a generally rectangular cross-section. The bumps 130 are disposed on the light-shielding layer 110. Each bump 130 fills the gap between two adjacent first electrode layers 120. The end 122 of each first electrode layer 120 is partially covered by the bump 130. The bump 130 may contain a photosensitive material. In one embodiment, the width of the light-blocking layer 110 in the lateral direction is greater than the width of the bump 130.

[0044] In some embodiments, the thickness H5 of the bump 130 is substantially equal to, less than, or greater than the thickness H0 of the light-blocking layer 110. In some embodiments, the thickness H5 of the bump 130 is greater than the thickness H0 of the light-blocking layer 110. In some embodiments, the ratio of the thickness H5 of the bump 130 to the thickness H0 of the light-blocking layer 110 is approximately 10:1 to approximately 1:1. In some embodiments, the ratio of the thickness H5 of the bump 130 to the thickness H0 of the light-blocking layer 110 is approximately 7:1 to approximately 2:1. In some embodiments, the ratio of the thickness H5 of the bump 130 to the thickness H0 of the light-blocking layer 110 is approximately 5:1 to approximately 3:1.

[0045] In some embodiments, the thickness H5 of the bump 130 is substantially equal to, less than, or greater than the thickness H4 of the center portion 121 of the first electrode layer 120. In some embodiments, the thickness H5 of the bump 130 is greater than the thickness H4 of the center portion 121 of the first electrode layer 120. In some embodiments, the ratio of the thickness H5 of the bump 130 to the thickness H4 of the center portion 121 of the first electrode layer 120 is approximately 10:1 to approximately 1:1. In some embodiments, the ratio of the thickness H3 of the bump 130 to the thickness H4 of the center portion 121 of the first electrode layer 120 is approximately 7:1 to approximately 2:1. In some embodiments, the ratio of the thickness H5 of the bump 130 to the thickness H4 of the center portion 121 of the first electrode layer 120 is approximately 5:1 to approximately 3:1.

[0046] In some embodiments, the bump 130 has an edge at its end 122 covering the first electrode layer 120. The sidewall 117 of the light-blocking layer 110 may or may not be aligned with the edge of the bump 130. Figures 2 to 4 As shown, the sidewall 117 of the light-blocking layer 110 is not aligned with the edge of the protrusion 130. There is an offset between the edge of the protrusion 130 and the sidewall 117 of the light-blocking layer 110. The percentage of the offset relative to the width of the light-blocking layer 110 can be greater than or equal to 10%. The percentage of the offset relative to the width of the light-blocking layer 110 can be greater than or equal to 20%. The percentage of the offset relative to the width of the light-blocking layer 110 can be greater than or equal to 30%. The percentage of the offset relative to the width of the light-blocking layer 110 can be greater than or equal to 40%.

[0047] In some embodiments, the organic light-emitting array 200 includes an organic layer 210 (or light-emitting layer) and a second electrode layer 220 on the organic layer 210.

[0048] In some embodiments, the organic layer 210 comprises one or more layers of organic light-emitting materials. The organic light-emitting materials include an electron transport layer (ETL), an electron injection layer (EIL), an emission layer (EM), a hole blocking layer (HBL), a hole injection layer (HIL), a hole transport layer (HTL), or any combination thereof. In some embodiments, the organic layer 210 includes a bulk injection layer, a first carrier transport layer, a second carrier transport layer, an organic emission layer, and an organic carrier transport layer above the bump 130 and the first electrode layer 120. In some embodiments, the carrier injection layer may be a hole injection layer, the first carrier transport layer may be a first hole transport layer, the second carrier transport layer may be a second hole transport layer, and the organic carrier transport layer may be an electron transport layer.

[0049] In some embodiments, the second electrode layer 220 is located above the organic layer 210. In some embodiments, the first electrode layer 120 is the anode, and the second electrode layer 220 is the cathode. In some embodiments, the second electrode layer 220 comprises a transparent conductive material. The second electrode layer 220 is patterned to cover only the effective light-emitting area of ​​each organic light-emitting unit. In some embodiments, the second electrode layer 220 is in contact with the organic layer 210. The second electrode layer 220 may be a continuous film and located above the organic layer 210. In other words, the second electrode layer 220 is a common electrode for a plurality of organic light-emitting units. In some embodiments, the second electrode layer 220 is a common electrode for all organic light-emitting units in the light-emitting element.

[0050] In some embodiments, the second electrode layer 220 may have approximately to approximately The thickness. In some embodiments, the second electrode layer 220 may have approximately [a certain thickness]. to approximately The thickness. In some embodiments, the second electrode layer 220 may have approximately [a certain thickness]. to approximately The thickness. In some embodiments, the second electrode layer 220 may have approximately [a certain thickness]. to approximately The thickness. In some embodiments, the second electrode layer 220 may have approximately [a certain thickness]. to approximately The thickness. In some embodiments, the second electrode layer 220 may have approximately [a certain thickness]. to approximately The thickness.

[0051] In some embodiments, the second electrode layer 220 may be a cathode. The second electrode layer 220 may be a metallic material, such as Ag, Mg, etc. In some embodiments, the second electrode layer 220 includes ITO (indium tin oxide) or IZO (indium zinc oxide).

[0052] According to some embodiments disclosed herein, in the light-emitting element 10, the light-shielding layer 110 does not have a conductive layer, but instead includes a non-conductive layer 112 comprising saturated oxide or unsaturated oxide. The non-conductive layer 112 has good light absorption and rotation properties, resulting in the light-shielding layer 110 having an ultra-low reflection effect within the optical element 10. Moreover, even if the non-conductive layer 112 of the light-shielding layer 110 comes into contact with the first electrode layer 120, the problem of short circuits caused by the first electrode coming into contact with the conductive layer in the light-shielding layer will not occur. Furthermore, there is no need to apply an additional isolation layer to solve the short circuit problem, thus simplifying the manufacturing process and reducing the manufacturing cost of the light-emitting element 10.

[0053] Figures 5 to 11 The illustration shows different stages of the manufacturing process of the light-emitting element 10 according to one embodiment.

[0054] exist Figure 5 In this process, a substrate 100 having a first surface 100s1 is provided.

[0055] exist Figure 6 In this process, one or more layers of a first antireflective material 111A are applied to the first surface 100s1 of the substrate 100. The first antireflective material 111A includes a light-absorbing material, including but not limited to metal oxides, carbon black materials, such as carbon black nanoparticles, carbon black-containing conductive fibers, or the like, which have an absorption rate of 90%, 95%, 99%, 99.5%, or 99.9% or more for visible light.

[0056] exist Figure 7 In this process, one or more layers of non-conductive material 112A are applied onto the first anti-reflective material 111A. The non-conductive material 112A includes unsaturated silicon oxide, unsaturated titanium oxide, unsaturated tantalum oxide, unsaturated aluminum oxide, or combinations thereof. Applying the non-conductive material 112A involves a vapor deposition process under low oxygen supply conditions to form an unsaturated oxide. In one embodiment, when unsaturated silicon monoxide (SiO) is to be formed, the silicon concentration introduced can be increased, and the oxygen supply can be controlled so that the oxygen concentration is insufficient to form unsaturated silicon dioxide (SiO2). In one embodiment, when saturated silicon dioxide (SiO) is to be formed, the oxygen concentration introduced can be increased, and the silicon supply can be controlled.

[0057] exist Figure 8 In this process, one or more layers of a second antireflective material 113A are applied to the non-conductive material 112A. The second antireflective material 113A includes a light-absorbing material, comprising, but not limited to, metal oxides, carbon black materials, such as carbon black nanoparticles, carbon black-containing conductive fibers, or the like, having an absorption rate of 90%, 95%, 99%, 99.5%, or 99.9% or higher for visible light. In one embodiment, the second antireflective material 113A may be the same as or different from the material of the first antireflective material 111A.

[0058] exist Figure 9 In this process, portions of the first antireflective material 111A, the non-conductive material 112A, and the second antireflective material 113A are removed to form a plurality of trenches 114 at intervals, exposing a portion of the first surface 100s1 of the substrate 100. This results in a plurality of light-shielding layers 110 being formed between the plurality of trenches 114. Each of the plurality of light-shielding layers 110 includes a first antireflective layer 111 formed of the first antireflective material 111A, a non-conductive layer 112 formed of the non-conductive material 112A, and a second antireflective layer 113 formed of the second antireflective material 113A. The non-conductive layer 112 comprises a saturated oxide or an unsaturated oxide. The removal of portions of the first antireflective material 111A, the non-conductive material 112A, and the second antireflective material 113A includes a step of removal by processes such as etching, and the width of the top 119 of each of the plurality of light-shielding layers 110 is substantially equal to or less than the width of its bottom 118.

[0059] When removing the first antireflective material 111A, the non-conductive material 112A, and the second antireflective material 113A using etching or similar processes, the process proceeds from the topmost first antireflective material 111A downwards. Therefore, based on the material properties of the first antireflective material 111A and the non-conductive material 112A, in one embodiment, the etched edge of the first antireflective material 111A can be dragged along the downward etching force, producing a... Figure 2 or Figure 3 The non-conductive layer 112 completely or partially covers the side 1122 of the light-shielding layer 110; similarly, the etched edge of the non-conductive material 112A can also be dragged along the downward etching force and cover the side 1112 of the first anti-reflective layer 111.

[0060] The pattern of the light-blocking layer 110 is designed according to the pixel arrangement, and the patterned light-blocking layer 110 can be referred to as a pixel definition layer (PDL). The bottom surface 118 of the light-blocking layer 110 directly contacts the upper surface of the substrate 100. The angle θ1 between the sidewall 117 of the light-blocking layer 110 and the first surface 100s1 of the substrate 100 is greater than 0 degrees to about 90 degrees. In some embodiments, the angle θ1 between the sidewall 117 of the light-blocking layer 110 and the first surface 100s1 of the substrate 100 is about 20 degrees to about 70 degrees. In some embodiments, the angle θ1 between the sidewall 117 of the light-blocking layer 110 and the first surface 100s1 of the substrate 100 is about 35 degrees to about 60 degrees. In some embodiments, the first antireflective material 111A, the non-conductive material 112A, and the second antireflective material 113A are each formed on the first surface 100s1 of the substrate 100 by any one of vapor deposition, sputtering, atomic layer deposition, thermal evaporation, coating, or spraying. In some embodiments, the first antireflective material 111A is formed on the first surface 100s1 of the substrate 100 by any one of vapor deposition, sputtering, atomic layer deposition, thermal evaporation, coating, or spraying; then the non-conductive material 112A is formed on the surface of the first antireflective material 111A by thermal evaporation; and then the second antireflective material 113A is formed on the non-conductive material 112A by any one of vapor deposition, sputtering, atomic layer deposition, thermal evaporation, coating, or spraying.

[0061] exist Figure 10 In this embodiment, a first electrode layer 120 is formed between a plurality of light-shielding layers 110. The first electrode layer 120 is formed on the upper surface 100s1 of the substrate 100 by any of the following methods: vapor deposition, sputtering, atomic layer deposition, thermal evaporation, coating, or spraying. Each first electrode layer 120 is configured to be electrically connected to the substrate 100. Each first electrode layer 120 includes a central portion 121 that directly contacts the upper surface 100s1 of the substrate 100 and an end portion 122 that spans the sidewalls 117 and a portion of the top surface 119 (or top) of the adjacent light-shielding layer 110. In some embodiments, the shape of the central portion 121 of the first electrode layer 120 may vary depending on the shape of the sidewalls 117 of the light-shielding layer 110.

[0062] exist Figure 11 In the process, a bump 130 is formed on the top surface 119 of the light-shielding layer 110, and the bump 130 covers the edge of the end 122 of the first electrode layer 120. The bump 130 can be formed on the top surface 119 of the light-shielding layer 110 by any of the following methods: vapor deposition, sputtering, atomic layer deposition, thermal evaporation, coating or spraying.

[0063] After the bump 130 is formed, a cleaning operation is performed to clean the exposed surfaces of the bump 130 and the first electrode layer 120. In one embodiment, during the cleaning operation, deionized water is heated to a temperature between 30°C and 80°C. After the temperature of the deionized water rises to a predetermined temperature, the deionized water is directed to the exposed surfaces of the bump 130 and the first electrode layer 120.

[0064] In some embodiments, ultrasonic waves are used during the cleaning operation. The ultrasonic waves are introduced into a cleaning agent (e.g., water or isopropyl alcohol (IPA)). In some embodiments, carbon dioxide is introduced into the cleaning agent. After the cleaning operation, the cleaning agent is removed from the exposed surfaces via a heating operation. During the heating operation, the substrate 100 and bump 130 can be heated to a temperature between 80°C and 110°C. In some examples, compressed air is directed to the exposed surfaces to help remove cleaning agent residues while heating is being performed.

[0065] Following the heating operation, the exposed surface can be treated with O2, N2, or Ar plasma. Plasma can be used to roughen the exposed surface. In some embodiments, ozone is used to condition the surface state of the exposed surface.

[0066] Next, an organic layer 210 is formed on the exposed surfaces of the bumps 130 and the first electrode layer 120 (and / or on the exposed surfaces of the light-shielding layer 110 where the bumps 130 are not formed). More specifically, the exposed surfaces of each first electrode layer 120 are configured as the effective light-emitting area of ​​a light-emitting unit (i.e., a pixel). A second electrode layer 220 is formed on the organic layer 210. The second electrode layer 220 may be a metallic material, such as Ag, Mg, etc. In some embodiments, the second electrode layer 220 includes ITO (indium tin oxide) or IZO (indium zinc oxide). In some embodiments, each light-emitting unit (i.e., pixel) may have an independent second electrode layer 220.

[0067] Repeatable, such as Figures 5 to 11 The operations shown are used to form light-emitting units of different colors.

[0068] This application allows the pattern to be adjusted into the desired shape according to actual needs.

[0069] The foregoing outlines some features of the embodiments, thus enabling those skilled in the art to better understand various aspects of this disclosure. Those skilled in the art should understand that this disclosure can be readily used as a basis for designing or modifying other processes and structures to achieve the same purpose and / or the same advantages as the embodiments described in this application. Those skilled in the art should also understand that this equivalent architecture does not depart from the spirit and scope of this disclosure, and that various changes, substitutions, and replacements can be made without departing from the spirit and scope of this disclosure.

[0070] Symbol Explanation

[0071] 10 Light-emitting elements

[0072] 20 Light-emitting layers

[0073] 30 spacers

[0074] 40 Covering layer

[0075] 100 substrates

[0076] 100S1 First Surface

[0077] 110 Light-blocking layer

[0078] 111 First anti-reflective layer

[0079] 111A First Anti-reflective Material

[0080] 1111 Top surface

[0081] 1112 Side View

[0082] 112 Non-conductive layer

[0083] 112A Non-conductive material

[0084] 1121 Top surface

[0085] 1122 Side View

[0086] 113 Second Anti-reflective Layer

[0087] 113A Second Anti-reflective Material

[0088] 1131 Top surface

[0089] 1132 Side View

[0090] 114 Trench

[0091] 117 Sidewall

[0092] 118 Bottom

[0093] 119 Top surface

[0094] 120 First Electrode Layer

[0095] 121 Central Department

[0096] 1211 Bottom

[0097] 1212 Top surface

[0098] 122 end

[0099] 130 bump

[0100] 131 Bottom

[0101] 132 Top surface

[0102] 200 light-emitting array

[0103] 210 Organic layer

[0104] 220 Second electrode layer

[0105] θ1 included angle

[0106] θ2 included angle

[0107] W1 width

[0108] W2 width

[0109] W3 width

[0110] W4 width

[0111] H1 thickness

[0112] H2 thickness

[0113] H3 thickness

[0114] H4 thickness

[0115] H5 thickness

Claims

1. A light-emitting element, comprising: substrate; A plurality of light-blocking layers are disposed at intervals on the first surface of the substrate; and A plurality of first electrode layers are disposed on the first surface of the substrate, each of the plurality of first electrodes being disposed between two adjacent light-shielding layers. Each of the plurality of light-shielding layers includes a first anti-reflective layer, a non-conductive layer, and a second anti-reflective layer. The first anti-reflective layer is disposed on the first surface of the substrate. The non-conductive layer covers the first anti-reflective layer. The second anti-reflective layer at least partially covers the non-conductive layer, such that the non-conductive layer is disposed between the first anti-reflective layer and the second anti-reflective layer. The non-conductive layer includes an oxide.

2. The light-emitting element as described in claim 1, characterized in that, The oxides include saturated oxides and unsaturated oxides.

3. The light-emitting element as described in claim 2, characterized in that, The unsaturated oxides include unsaturated silicon oxide, unsaturated titanium oxide, unsaturated tantalum oxide, unsaturated aluminum oxide, or combinations thereof.

4. The light-emitting element as described in any one of claims 1 to 3, characterized in that, The width of the top of each of the plurality of light-shielding layers is substantially equal to or less than the width of its bottom, such that the angle between the sidewall of each of the plurality of light-shielding layers and the first surface of the substrate is greater than 0 degrees to about 90 degrees.

5. The light-emitting element as described in any one of claims 1 to 3, characterized in that, The width of the top of the first antireflective layer is substantially equal to or less than the width of its bottom, such that the angle between the sidewall of each of the plurality of light-shielding layers and the first surface of the substrate is greater than 0 degrees to about 90 degrees.

6. The light-emitting element as described in claim 5, characterized in that, At least both ends of the non-conductive layer are in contact with the first electrode layer.

7. The light-emitting element as described in claim 5, characterized in that, The second anti-reflective layer completely covers the non-conductive layer, such that both ends of the second anti-reflective layer are in contact with the first surface of the substrate.

8. The light-emitting element as described in any one of claims 1 to 3, characterized in that, The thickness of the non-conductive layer is greater than the thickness of the second anti-reflective layer, and the thickness of the non-conductive layer is greater than the thickness of the first anti-reflective layer.

9. The light-emitting element as described in any one of claims 1 to 3, characterized in that, Each of the plurality of first electrodes includes a central portion and two end portions extending from the central portion to both sides. The central portion is disposed between two adjacent light-shielding layers, and the two end portions span the sidewalls and part of the top of the adjacent light-shielding layers.

10. The light-emitting element as described in any one of claims 1 to 3, characterized in that, The light-emitting element further includes: A plurality of bumps are disposed on the plurality of light-blocking layers; A light-emitting layer covering the plurality of first electrodes and the plurality of bumps; and A second electrode layer covers the light-emitting layer.

11. The light-emitting element as claimed in claim 10, characterized in that, The plurality of bumps partially cover the two ends of the first electrode and the top of the light-blocking layer exposed between the plurality of first electrodes.

12. A method for manufacturing a light-emitting element, comprising: Provide substrate; A first anti-reflective material, a non-conductive material, and a second anti-reflective material are sequentially applied to the first surface of the substrate. A plurality of trenches are formed by removing portions of the first antireflective material, the non-conductive material, and the second antireflective material at intervals, such that a plurality of light-blocking layers are formed between the plurality of trenches. Each of the plurality of light-blocking layers includes a first antireflective layer formed of the first antireflective material, a non-conductive layer formed of the non-conductive material, and a second antireflective layer formed of the second antireflective material. The non-conductive layer includes an oxide. A plurality of first electrodes are formed at intervals such that the plurality of first electrodes cover the first surface of the substrate exposed between the plurality of trenches and the sidewalls and part of the top of the adjacent light-shielding layer.

13. The light-emitting element as described in claim 12, characterized in that, The oxides include saturated oxides and unsaturated oxides.

14. The manufacturing method as described in claim 13, characterized in that, Applying the non-conductive material involves a vapor deposition process under low oxygen supply conditions, such that the non-conductive layer comprises the unsaturated oxide.

15. The manufacturing method as described in claim 14, characterized in that, The non-conductive layer includes unsaturated silicon oxide, unsaturated titanium oxide, unsaturated tantalum oxide, unsaturated aluminum oxide, or a combination thereof.

16. The manufacturing method according to any one of claims 12 to 15, characterized in that, Removing portions of the first antireflective material, the non-conductive material, and the second antireflective material includes etching the first antireflective material, the non-conductive material, and the second antireflective material such that the top width of each of the plurality of light-blocking layers is substantially equal to or less than its bottom width.

17. The manufacturing method as described in claim 16, characterized in that, At least both ends of the non-conductive layer are in contact with the first electrode layer.

18. The manufacturing method as described in claim 16, characterized in that, The second anti-reflective layer completely covers the non-conductive layer, such that both ends of the second anti-reflective layer are in contact with the first surface of the substrate.

19. The manufacturing method according to any one of claims 12 to 15, characterized in that, The manufacturing method further includes: A plurality of bumps are formed on the plurality of light-blocking layers, and partially cover the first electrode; A light-emitting layer is formed on the plurality of first electrodes and the plurality of bumps; and A second electrode layer is formed on the light-emitting layer.

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