Light emitting element

Abstract

A light emitting element includes a substrate, a plurality of light blocking layers, a plurality of first electrode layers, a light emitting layer, and a second electrode layer. The plurality of light blocking layers are spaced apart on a first surface of the substrate. The plurality of first electrode layers are disposed on the first surface of the substrate, each of the plurality of first electrode layers being disposed between two adjacent light blocking layers. The light emitting layer covers the plurality of first electrode layers. The second electrode layer covers the light emitting layer.

Description

Technical Field

[0001] This disclosure relates to a light-emitting element, and more particularly to an organic light-emitting element. Background Technology

[0002] Organic light-emitting displays (OLEDs) are widely used in high-end electronic devices. However, due to limitations in current technology, the luminous efficiency and quality of light-emitting materials cannot be effectively controlled, resulting in less-than-expected optical performance of the devices. Summary of the Invention

[0003] In this disclosure, a light-emitting element includes a substrate, a plurality of light-shielding layers, a plurality of first electrode layers, a light-emitting layer, and a second electrode layer. The plurality of light-shielding layers are disposed at intervals on a first surface of the substrate; the plurality of first electrode layers are disposed on the first surface of the substrate, each of the plurality of first electrode layers being disposed between two adjacent light-shielding layers; the light-emitting layer covers the plurality of first electrode layers; and the second electrode layer covers the light-emitting layer.

[0004] In this disclosure, a method for manufacturing a light-emitting element includes: providing a substrate; forming a plurality of light-shielding layers at intervals on a first surface of the substrate; forming a plurality of first electrode layers on the substrate, each including a central portion formed between the light-shielding layers and end portions extending from both sides of the central portion and spanning the sidewalls and a portion of the top surface of adjacent light-shielding layers; forming a light-emitting layer on the plurality of first electrode layers; and forming a second electrode layer on the light-emitting layer.

[0005] In some embodiments, each of the plurality of first electrode layers includes a central portion and an end portion extending from the side of the central portion, the central portion being disposed between two adjacent light-shielding layers, and the end portion spanning the sidewall and part of the top surface of the adjacent light-shielding layers.

[0006] In some embodiments, the angle between the sidewall of the end of the first electrode layer and the top surface of the light-shielding layer is greater than 0 degrees to about 90 degrees.

[0007] In some embodiments, the thickness of the central portion of the first electrode layer is substantially equal to or less than the thickness of the light-shielding layer.

[0008] In some embodiments, the light-emitting element further includes a plurality of bumps disposed on a plurality of light-blocking layers, and the light-emitting layer covers the plurality of bumps.

[0009] In some embodiments, the light-emitting element further includes a plurality of bumps disposed on a plurality of light-shielding layers, the plurality of bumps partially covering the ends of the first electrode layer, and the light-emitting layer covering the plurality of bumps.

[0010] In some embodiments, the thickness of the center portion of the first electrode layer is substantially equal to the thickness of the end portion.

[0011] In some embodiments, the top width of each of the plurality of light-blocking layers is substantially equal to or less than its bottom width.

[0012] In some embodiments, the angle between the sidewall of each of the plurality of light-shielding layers and the first surface of the substrate is greater than 0 degrees to about 90 degrees.

[0013] In some embodiments, the plurality of light-blocking layers include a light-absorbing layer disposed on a first surface of the substrate and a bonding layer covering the light-absorbing layer.

[0014] In some embodiments, before forming the light-emitting layer, a plurality of bumps are formed on a plurality of light-shielding layers and partially cover the ends of the first electrode layers; the light-emitting layer is formed on the plurality of first electrode layers and the plurality of light-shielding layers. Attached Figure Description

[0015] Figure 1 This is a top view illustrating the intermediate products of an organic light-emitting element.

[0016] Figure 2 For example, along Figure 1 A cross-sectional view of line AA in the diagram.

[0017] Figure 3 For example, along Figure 1 A partial cross-sectional view of line AA in the diagram.

[0018] Figure 4 For example, along Figure 1 A partial cross-sectional view of line AA in the diagram.

[0019] Figure 5 For example, along Figure 1 A partial cross-sectional view of line AA in the diagram.

[0020] Figure 6 For example, along Figure 1 A partial cross-sectional view of line AA in the diagram.

[0021] Figure 7 For example, along Figure 1 A partial cross-sectional view of line AA in the diagram.

[0022] Figure 8 For example, along Figure 1 A partial cross-sectional view of line AA in the diagram.

[0023] Figures 9A to 9D The illustration depicts different stages of the manufacturing process of a light-emitting element according to one embodiment. Detailed Implementation

[0024] Figure 1This is a top view illustrating an intermediate product of the light-emitting element 10. The light-emitting element 10 has a light-emitting layer 20 and an overlay layer 40 located above the light-emitting layer 20. For the light-emitting layer 20, spacers 21 may be designed to provide an array of recesses for accommodating an array of light-emitting pixels. In some embodiments, the spacers 21 may comprise a photosensitizing material.

[0025] Figure 2 For example, along Figure 1 The diagram shows a cross-sectional view of line AA, illustrating only the light-emitting region. For simplicity, the upper cover layer 40 is omitted here. In some embodiments, the light-emitting element 10 includes a substrate 100, a plurality of light-shielding layers 110 above the substrate 100, a plurality of first electrode layers 120, a plurality of bumps 130, and a light-emitting array 200.

[0026] In some embodiments, substrate 100 may include a thin-film transistor (TFT) array configured to correspond to light-emitting pixels in light-emitting layer 20. Substrate 100 may include a plurality of capacitors. In some embodiments, more than one transistor is configured to form a circuit with a capacitor and a light-emitting pixel.

[0027] In some embodiments, light-blocking layers 110 are spaced apart on the first surface of the substrate 100. In this disclosure, the pattern of the light-blocking layers 110 is designed according to a pixel arrangement, and the patterned light-blocking layers 110 can be referred to as pixel-defined layers (PDLs). The light-blocking layers 110 include a bottom surface 111, a top surface 112, and sidewalls 113. The bottom surface 111 of the light-blocking layers 110 directly contacts the first surface of the substrate 100. A thickness H1 exists between the top surface 112 and the bottom surface 111 of the light-blocking layers 110. The width W1 of the bottom surface of the light-blocking layers 110 is substantially equal to or greater than the width W2 of the top surface 112 of the light-blocking layers 110. In some embodiments, the width W1 of the bottom surface 111 of the light-blocking layers 110 is substantially equal to the width W2 of the top surface 112 of the light-blocking layers 110. The light-blocking layers 110 have a rectangular cross-section, such as... Figure 3 , Figure 5 and Figure 7 As shown. In some embodiments, the width W1 of the bottom surface 111 of the light-blocking layer 110 is greater than the width W2 of the top surface 112 of the light-blocking layer 110, and the light-blocking layer 110 has a trapezoidal cross-section, as shown. Figure 2 , Figure 4 and Figure 6As shown. In some embodiments, the ratio of the width W1 of the bottom surface 111 of the light-blocking layer 110 to the width W2 of the top surface 112 of the light-blocking layer 110 is approximately 10:1 to approximately 1:1. In some embodiments, the ratio of the width W1 of the bottom surface 111 of the light-blocking layer 110 to the width W2 of the top surface 112 of the light-blocking layer 110 is approximately 7:1 to approximately 1:1. In some embodiments, the ratio of the width W1 of the bottom surface 111 of the light-blocking layer 110 to the width W2 of the top surface 112 of the light-blocking layer 110 is approximately 3:1 to approximately 1:1.

[0028] In some embodiments, the angle θ1 between the sidewall 113 of the light-shielding layer 110 and the first surface of the substrate 100 is greater than 0 degrees to about 90 degrees. In some embodiments, the angle θ1 between the sidewall 113 of the light-shielding layer 110 and the first surface of the substrate 100 is about 20 degrees to about 70 degrees. In some embodiments, the angle θ1 between the sidewall 113 of the light-shielding layer 110 and the first surface of the substrate 100 is about 35 degrees to about 60 degrees.

[0029] In some embodiments, the light-blocking layer 110 comprises a light-absorbing material, including but not limited to metals, metal oxides, carbon black materials, such as carbon black nanoparticles, carbon black-containing conductive fibers, or the like. In some embodiments, the light-blocking layer 110 comprises a blackbody material having an absorption rate of 90%, 95%, 99%, 99.5%, or 99.9% or higher for visible light. The light-blocking layer 110 comprises a single material layer or a plurality of different material layers. In some embodiments, the light-blocking layer 110 comprises a single metal layer. In some embodiments, the light-blocking layer 110 comprises a single metal oxide layer. In some embodiments, the light-blocking layer 110 comprises one or more metal layers and one or more metal oxide layers. In some embodiments, the light-blocking layer 110 further comprises a bonding layer, such as a silicon dioxide layer. In some embodiments, such as Figure 4 As shown, the light-blocking layer 110 includes a light-absorbing layer 110a and a bonding layer 110b covering the light-absorbing layer 110a as a top layer. In some embodiments, the bonding layer 110b includes a material that is the same as or compatible with the bumps 130 subsequently formed thereon, such as a silicon dioxide layer, so that the light-blocking layer 110 can have better adhesion to the bumps 130 subsequently formed thereon. In some embodiments, the single layer or multiple layers of the light-blocking layer 110 can be formed by any of vapor deposition, sputtering, atomic layer deposition, thermal evaporation, coating or spraying.

[0030] A plurality of first electrode layers 120 are disposed on a first surface of the substrate 100, each of the plurality of first electrode layers 120 including a central portion 121 formed between light-shielding layers 110 and end portions 122 extending from both sides of the central portion 121. In some embodiments, the shape of the central portion 121 of the first electrode layer 120 may be varied according to the shape of the sidewalls 113 of the light-shielding layer 110. In some embodiments, the width W3 of the bottom surface 1211 of the central portion 121 of the first electrode layer 120 is substantially equal to or less than the width W4 of the top surface 1212 of the central portion 121 of the first electrode layer 120. In some embodiments, the ratio of the width W3 of the bottom surface 1211 of the central portion 121 of the first electrode layer 120 to the width W4 of the top surface 1212 of the central portion 121 of the first electrode layer 120 is from about 1:7 to about 1:1. In some embodiments, the ratio of the width W3 of the bottom surface 1211 of the center portion 121 of the first electrode layer 120 to the width W4 of the top surface 1212 of the center portion 121 of the first electrode layer 120 is approximately 1:3 to approximately 1:1. In some embodiments, such as Figure 2 , Figure 4 and Figure 6 As shown, the width W1 of the bottom surface 1211 of the light-blocking layer 110 is smaller than the width W2 of the top surface 112 of the light-blocking layer 110. The light-blocking layer 110 has a trapezoidal cross-section, and the central portion 121 of the first electrode layer 120 has an inverted trapezoidal cross-section. In some embodiments, such as Figure 3 , Figure 5 and Figure 7 As shown, the width W1 of the bottom surface 111 of the light-shielding layer 110 is substantially equal to the width W2 of the top surface 112 of the light-shielding layer 110. The light-shielding layer 110 has a rectangular cross-section, and the center part 121 of the first electrode layer 120 has a rectangular cross-section.

[0031] In some embodiments, the width W3 of the bottom surface 1211 of the central portion 121 of the first electrode layer 120 is substantially equal to, greater than, or less than the width W1 of the bottom surface 1211 of the light-shielding layer 110. In some embodiments, the width W3 of the bottom surface 1211 of the central portion 121 of the first electrode layer 120 is less than the width W1 of the bottom surface 1211 of the light-shielding layer 110. In some embodiments, the ratio of the width W3 of the bottom surface 1211 of the central portion 121 of the first electrode layer 120 to the width W1 of the bottom surface 1211 of the light-shielding layer 110 is approximately 1:1 to approximately 1:10. In some embodiments, the ratio of the width W3 of the bottom surface 1211 of the central portion 121 of the first electrode layer 120 to the width W1 of the bottom surface 1211 of the light-shielding layer 110 is approximately 1:2 to approximately 1:8. In some embodiments, the ratio of the width W3 of the bottom surface 1211 of the center portion 121 of the first electrode layer 120 to the width W1 of the bottom surface 1211 of the light-shielding layer 110 is approximately 1:3 to approximately 1:5.

[0032] In some embodiments, the width W4 of the top surface 1212 of the central portion 121 of the first electrode layer 120 is substantially equal to, greater than, or less than the width W1 of the bottom surface 1211 of the light-shielding layer 110. In some embodiments, the width W4 of the top surface 1212 of the central portion 121 of the first electrode layer 120 is substantially greater than the width W1 of the bottom surface 1211 of the light-shielding layer 110. In some embodiments, the ratio of the width W4 of the top surface 1212 of the central portion 121 of the first electrode layer 120 to the width W1 of the bottom surface 1211 of the light-shielding layer 110 is approximately 1:1 to approximately 1:10. In some embodiments, the ratio of the width W4 of the top surface 1212 of the central portion 121 of the first electrode layer 120 to the width W1 of the bottom surface 1211 of the light-shielding layer 110 is approximately 1:2 to approximately 1:8. In some embodiments, the ratio of the width W4 of the top surface 1212 of the center portion 121 of the first electrode layer 120 to the width W1 of the bottom surface 1211 of the light-shielding layer 110 is approximately 1:3 to approximately 1:5.

[0033] In some embodiments, the thickness H2 of the central portion 121 of the first electrode layer 120 is substantially equal to, less than, or greater than the thickness H1 of the light-shielding layer 110. In some embodiments, the thickness H2 of the central portion 121 of the first electrode layer 120 is substantially equal to or less than the thickness H1 of the light-shielding layer 110. In some embodiments, the ratio of the thickness H2 of the central portion 121 of the first electrode layer 120 to the thickness H1 of the light-shielding layer 110 is approximately 3:1 to approximately 1:3. In some embodiments, the ratio of the thickness H2 of the central portion 121 of the first electrode layer 120 to the thickness H1 of the light-shielding layer 110 is approximately 2:1 to approximately 1:2.

[0034] In some embodiments, the end portion 122 of the first electrode layer 120 spans the sidewall 113 and part of the top surface 112 of an adjacent light-shielding layer 110, and the angle θ2 between the sidewall of the end portion 122 of the first electrode layer 120 and the top surface 112 of the light-shielding layer 110 is greater than 0 degrees to about 90 degrees. In some embodiments, the angle θ2 between the sidewall of the end portion 122 of the first electrode layer 120 and the top surface 112 of the light-shielding layer 110 is greater than 20 degrees to about 70 degrees. In some embodiments, the angle θ2 between the sidewall of the end portion 122 of the first electrode layer 120 and the top surface 112 of the light-shielding layer 110 is greater than 35 degrees to about 60 degrees. In some embodiments, such as Figures 2 to 5 As shown, the angle θ2 between the sidewall of the end 122 of the first electrode layer 120 and the top surface 112 of the light-shielding layer 110 is approximately 90 degrees. In some embodiments, such as Figure 6 and Figure 7 As shown, the angle θ2 between the sidewall of the end 122 of the first electrode layer 120 and the top surface 112 of the light-shielding layer 110 is less than 90 degrees. In some embodiments, such as Figure 5and Figure 7 The corner between the sidewall of the end 122 of the first electrode layer 120 and the top surface may be rounded. In some embodiments, the light-emitting component 10 may include a plurality of bumps 130 covering the end 122 of each first electrode layer 120 to ensure that the first electrode layer 120 does not directly contact the second electrode layer 220. In some embodiments, the light-emitting component 10 may not include bumps 130, or may partially include bumps 130, so that the corner between the sidewall of the end 122 of the first electrode layer 120 and the top surface is rounded, which can prevent the corner between the sidewall of the first electrode layer 120 and the top surface from piercing the organic layer 210 of the organic light-emitting array 200, thus ensuring that the first electrode layer 120 does not directly contact the second electrode layer 220. In some embodiments, the thickness of the central portion 121 of the first electrode layer 120 is substantially equal to the thickness of the end 122.

[0035] In some embodiments, the first electrode layer 120 may comprise ITO, IZO, IGZO, AlCu alloy, or AgMo alloy, with a thickness of approximately to ITO (or IZO or IGZO) and approximately to approximately Metal films (Ag, Al, Mg, Au) with a thickness of approximately to The first electrode layer 120 is an ITO (indium tin oxide). In some embodiments, the first electrode layer 120 is a composite structure. For example, the first electrode layer 120 has a conductive film and a transparent conductive film disposed thereon. The conductive film is located between the transparent conductive film and the substrate 100. In some embodiments, the conductive film comprises aluminum, gold, silver, copper, etc. In some embodiments, the transparent conductive film comprises indium, tin, graphene, zinc, oxygen, etc. In some embodiments, the first electrode layer 120 includes a transparent conductive film. In some embodiments, the first electrode layer 120 includes ITO (indium tin oxide). In some embodiments, the first electrode layer 120 includes IZO (indium zinc oxide). In some embodiments, the first electrode layer 120 includes IGZO (indium gallium zinc oxide). In some embodiments, the roughness of the transparent conductive film... The thickness of the conductive film can be approximately to approximately Between. The thickness of the transparent conductive film can be approximately... to approximately between.

[0036] In some embodiments, the first electrode layer 120 has at least three different films. A conductive film (e.g., Al, Cu, Ag, Au, etc.) is sandwiched between two transparent conductive films. In some cases, one of the two transparent conductive films is ITO, with one side in contact with the substrate 100 and the other side in contact with the conductive film. In some cases, one of the two transparent conductive films is ITO, with one side in contact with the conductive film and the other side in contact with the bump 130 and / or the light-emitting array 200.

[0037] In some embodiments, each bump 130 is disposed on the light-shielding layer 110, protruding away from the substrate 100 and covering the peripheral region of the first electrode layer 120. In some embodiments, the positions of the plurality of bumps 130 may correspond one-to-one with the positions of the plurality of light-shielding layers 110. In some embodiments, the bumps 130 comprise silicon dioxide or the like. In some embodiments, the plurality of bumps 130 are disposed only on a portion of the light-shielding layer 110. In some embodiments, the bumps 130 partially cover the end 122 of the first electrode layer 120. The bumps 130 may have different shapes. In some embodiments, the bumps 130 have a bottom surface 131 that directly contacts the top surface 112 of the light-shielding layer 110 and a curved top surface 132 that contacts the light-emitting array 200. In some embodiments, the bumps 130 have a generally trapezoidal cross-section. In some embodiments, the bumps 130 have a generally rectangular cross-section. The bumps 130 are disposed on the light-shielding layer 110. Each bump 130 fills the gap between two adjacent first electrode layers 120. The end 122 of each first electrode layer 120 is partially covered by the bump 130. The bump 130 may contain photosensitive material. Figure 2 In the middle, the width of the light blocking layer 110 in the horizontal direction is greater than the width of the bump 130.

[0038] In some embodiments, the width W5 of the bottom surface 131 of each bump 130 is substantially equal to, greater than, or less than the width W6 of the top surface 132 of each bump 130. In some embodiments, the width W5 of the bottom surface 131 of each bump 130 is greater than the width W6 of the top surface 132 of each bump 130. In some embodiments, the ratio of the width W5 of the bottom surface 131 of each bump 130 to the width W6 of the top surface 132 of each bump 130 is from about 1:1 to about 10:1. In some embodiments, the ratio of the width W5 of the bottom surface 131 of each bump 130 to the width W6 of the top surface 132 of each bump 130 is from about 1:1 to about 7:1. In some embodiments, the ratio of the width W5 of the bottom surface 131 of each bump 130 to the width W6 of the top surface 132 of each bump 130 is from about 1:1 to about 3:1.

[0039] In some embodiments, the width W5 of the bottom surface 131 of each bump 130 is substantially equal to, greater than, or less than the width W2 of the top surface 112 of the light-blocking layer 110. In some embodiments, the width W5 of the bottom surface 131 of the bump 130 is less than the width W2 of the top surface 112 of the light-blocking layer 110. In some embodiments, the ratio of the width W5 of the bottom surface 131 of the bump 130 to the width W2 of the top surface 112 of the light-blocking layer 110 is approximately 1:1 to approximately 1:5. In some embodiments, the ratio of the width W5 of the bottom surface 131 of each bump 130 to the width W2 of the top surface 112 of the light-blocking layer 110 is approximately 9:10 to approximately 3:10. In some embodiments, the ratio of the width W5 of the bottom surface 131 of each bump 130 to the width W2 of the top surface 112 of the light-blocking layer 110 is approximately 4:5 to approximately 2:5.

[0040] In some embodiments, the width W6 of the top surface 132 of the protrusion 130 is smaller than the width W2 of the top surface 112 of the light-blocking layer 110. In some embodiments, the ratio of the width W6 of the top surface 132 of the protrusion 130 to the width W2 of the top surface 112 of the light-blocking layer 110 is approximately 1:1 to approximately 1:10. In some embodiments, the ratio of the width W6 of the top surface 132 of the protrusion 130 to the width W2 of the top surface 112 of the light-blocking layer 110 is approximately 1:3 to approximately 1:7. In some embodiments, the ratio of the width W6 of the top surface 132 of the protrusion 130 to the width W2 of the top surface 112 of the light-blocking layer 110 is approximately 1:4 to approximately 1:6.

[0041] In some embodiments, the thickness H3 of the bump 130 is substantially equal to, less than, or greater than the thickness H1 of the light-blocking layer 110. In some embodiments, the thickness H3 of the bump 130 is greater than the thickness H1 of the light-blocking layer 110. In some embodiments, the ratio of the thickness H3 of the bump 130 to the thickness H1 of the light-blocking layer 110 is approximately 10:1 to approximately 1:1. In some embodiments, the ratio of the thickness H3 of the bump 130 to the thickness H1 of the light-blocking layer 110 is approximately 7:1 to approximately 2:1. In some embodiments, the ratio of the thickness H3 of the bump 130 to the thickness H1 of the light-blocking layer 110 is approximately 5:1 to approximately 3:1.

[0042] In some embodiments, the thickness H3 of the bump 130 is substantially equal to, less than, or greater than the thickness H2 of the center portion 121 of the first electrode layer 120. In some embodiments, the thickness H3 of the bump 130 is greater than the thickness H2 of the center portion 121 of the first electrode layer 120. In some embodiments, the ratio of the thickness H3 of the bump 130 to the thickness H2 of the center portion 121 of the first electrode layer 120 is approximately 10:1 to approximately 1:1. In some embodiments, the ratio of the thickness H3 of the bump 130 to the thickness H2 of the center portion 121 of the first electrode layer 120 is approximately 7:1 to approximately 2:1. In some embodiments, the ratio of the thickness H3 of the bump 130 to the thickness H2 of the center portion 121 of the first electrode layer 120 is approximately 5:1 to approximately 3:1.

[0043] In some embodiments, the bump 130 has an edge at the end 122 covering the first electrode layer 120. The sidewall 113 of the light-blocking layer 110 may or may not be aligned with the edge of the bump 130. Figure 2 As shown, the sidewall 113 of the light-blocking layer 110 is not aligned with the edge of the protrusion 130. There is an offset between the edge of the protrusion 130 and the sidewall 113 of the light-blocking layer 110. The percentage of the offset relative to the width of the light-blocking layer 110 can be greater than or equal to 10%. The percentage of the offset relative to the width of the light-blocking layer 110 can be greater than or equal to 20%. The percentage of the offset relative to the width of the light-blocking layer 110 can be greater than or equal to 30%. The percentage of the offset relative to the width of the light-blocking layer 110 can be greater than or equal to 40%.

[0044] In some embodiments, the light-emitting component 10 may not include the bump 130. Alternatively, in some embodiments, such as Figure 8 As shown, the light-emitting component 10 has bumps 130 on a portion of the light-shielding layer 110, so the edge of the end 122 of a portion of the first electrode layer 120 is covered by the bumps 130, and the top 112 of a portion of the light-shielding layer 110 is exposed between the ends 122 of adjacent first electrode layers 120, and then covered by the organic light-emitting array 200, so that the organic light-emitting array 200 contacts the portion of the light-shielding layer 110.

[0045] In some embodiments, the organic light-emitting array 200 includes an organic layer 210 (or light-emitting layer) and a second electrode layer 220 on the organic layer 210.

[0046] In some embodiments, the organic layer 210 includes one or more layers of organic light-emitting materials. The organic light-emitting materials include an electron transport layer (ETL), an electron injection layer (EIL), an emission layer (EM), a hole blocking layer (HBL), a hole injection layer (HIL), a hole transport layer (HTL), or any combination thereof. In some embodiments, the organic layer 210 includes a first carrier transport layer 212 above the bump 130 and the first electrode layer 120, a second carrier transport layer 213 above the first carrier transport layer 212, and an organic emission layer 214 above the second carrier transport layer 213. In some embodiments, the organic layer 210 further includes a carrier injection layer 211 disposed between the first electrode layer 120 and the first carrier transport layer 212. In some embodiments, the organic layer 210 further includes an organic carrier transport layer 215 disposed above the organic emission layer 214. In some embodiments, the carrier injection layer 211 may be a hole injection layer, the first carrier transport layer 212 may be a first hole transport layer, the second carrier transport layer 213 may be a second hole transport layer, and the organic carrier transport layer 215 may be an electron transport layer.

[0047] In some embodiments, the second electrode layer 220 is located above the organic layer 210. In some embodiments, the first electrode layer 120 is the anode, and the second electrode layer 220 is the cathode. In some embodiments, the second electrode layer 220 comprises a transparent conductive material. The second electrode layer 220 is patterned to cover only the effective light-emitting areas of each organic light-emitting unit 200A, 200B. In some embodiments, the second electrode layer 220 is in contact with the organic layer 210. The second electrode layer 220 may be as follows: Figure 2 The continuous film shown is located above the organic layer 210. In other words, the second electrode layer 220 is the common electrode of a plurality of organic light-emitting units 200A, 200B. In some embodiments, the second electrode layer 220 is the common electrode of all organic light-emitting units 200A, 200B in the light-emitting assembly.

[0048] In some embodiments, the second electrode layer 220 may have approximately to approximately The thickness. In some embodiments, the second electrode layer 220 may have approximately [a certain thickness]. to approximately The thickness. In some embodiments, the second electrode layer 220 may have approximately [a certain thickness]. to approximately The thickness. In some embodiments, the second electrode layer 220 may have approximately [a certain thickness]. to approximately The thickness. In some embodiments, the second electrode layer 220 may have approximately [a certain thickness]. to approximately The thickness. In some embodiments, the second electrode layer 220 may have approximately [a certain thickness]. to approximately The thickness.

[0049] In some embodiments, the second electrode layer 220 may be a cathode. The second electrode layer 220 may be a metallic material, such as Ag, Mg, etc. In some embodiments, the second electrode layer 220 includes ITO (indium tin oxide) or IZO (indium zinc oxide).

[0050] According to some embodiments disclosed herein, in the light-emitting component, the light-blocking layer 110 can serve as a pixel definition layer (PDL), and therefore the bumps 130 can be configured as appropriate. Since the light-blocking layer 110 is directly adjacent to the plurality of first electrode layers 120, it can define the light-emitting area, effectively reduce the halo problem of the light-emitting pattern, and improve the contrast of the light-emitting pattern, making the boundary of the light-emitting pattern clearer, thus realizing a light-emitting pattern with fine pattern design and high contrast.

[0051] Figures 9A to 9D The illustration shows different stages of the manufacturing process of the light-emitting component 10 according to one embodiment.

[0052] exist Figure 9A In this embodiment, a substrate 100 having an upper surface 100s1 is provided, and a plurality of light-shielding layers 110 are formed at intervals on the first surface 100s1 of the substrate 100. The pattern of the light-shielding layers 110 is designed according to a pixel arrangement, and the patterned light-shielding layers 110 may be referred to as pixel definition layers (PDLs). The bottom surface 111 of the light-shielding layers 110 directly contacts the upper surface 100s1 of the substrate 100. The angle θ1 between the sidewall 113 of the light-shielding layers 110 and the first surface 100s1 of the substrate 100 is greater than 0 degrees to about 90 degrees. In some embodiments, the angle θ1 between the sidewall 113 of the light-shielding layers 110 and the first surface 100s1 of the substrate 100 is about 20 degrees to about 70 degrees. In some embodiments, the angle θ1 between the sidewall 113 of the light-shielding layers 110 and the first surface 100s1 of the substrate 100 is about 35 degrees to about 60 degrees. In some embodiments, a plurality of light-blocking layers 110 may be formed on the first surface 100s1 of the substrate 100 by any of vapor deposition, sputtering, atomic layer deposition, thermal evaporation, coating, or spraying. Each of the plurality of light-blocking layers 110 may be a single layer or multiple layers, and each layer in the multiple layers may be formed by any of vapor deposition, sputtering, atomic layer deposition, thermal evaporation, coating, or spraying. In some embodiments, one or more light-absorbing layers 110a may be formed on the first surface 100s1 of the substrate 100 by any of vapor deposition, sputtering, atomic layer deposition, thermal evaporation, coating, or spraying, and then a bonding layer 110b (e.g., ...) may be formed on the surface of one or more light-absorbing layers 110a by any of vapor deposition, sputtering, atomic layer deposition, thermal evaporation, coating, or spraying. Figure 4(As shown). In some embodiments, the light-absorbing layer 110a comprises a light-absorbing material, including but not limited to metals, metal oxides, carbon black materials, such as carbon black nanoparticles, carbon black-containing conductive fibers, or the like, and the bonding layer 110b comprises silicon dioxide.

[0053] exist Figure 9B In this embodiment, a first electrode layer 120 is formed between a plurality of light-shielding layers 110. The first electrode layer 120 is formed on the upper surface 100s1 of the substrate 100 by any of the following methods: vapor deposition, sputtering, atomic layer deposition, thermal evaporation, coating, or spraying. Each first electrode layer 120 is configured to be electrically connected to the substrate 100. Each first electrode layer 120 includes a central portion 121 that directly contacts the upper surface 100s1 of the substrate 100 and an end portion 122 that spans the sidewalls 113 and a portion of the top surface 112 of adjacent light-shielding layers 110. In some embodiments, the shape of the central portion 121 of the first electrode layer 120 may vary depending on the shape of the sidewalls 113 of the light-shielding layers 110.

[0054] exist Figure 9C In this process, a bump 130 is formed on the top surface 112 of the light-shielding layer 110, covering the edge of the end 122 of the first electrode layer 120. The bump 130 can be formed on the top surface 112 of the light-shielding layer 110 by any of the following methods: vapor deposition, sputtering, atomic layer deposition, thermal evaporation, coating, or spraying. The material forming the bump 130 can be the same as or compatible with the material of the bonding layer 110b, which is the top layer of the light-shielding layer 110, so that the bump 130 and the light-shielding layer 110 have better adhesion.

[0055] After the bump 130 is formed, a cleaning operation is performed to clean the exposed surfaces of the bump 130 and the first electrode layer 120. In one embodiment, during the cleaning operation, deionized water is heated to a temperature between 30°C and 80°C. After the temperature of the deionized water rises to a predetermined temperature, the deionized water is directed to the exposed surfaces of the bump 130 and the first electrode layer 120.

[0056] In some embodiments, ultrasonic waves are used during the cleaning operation. The ultrasonic waves are introduced into a cleaning agent (e.g., water or isopropyl alcohol (IPA)). In some embodiments, carbon dioxide is introduced into the cleaning agent. After the cleaning operation, the cleaning agent is removed from the exposed surfaces via a heating operation. During the heating operation, the substrate 100 and bump 130 can be heated to a temperature between 80°C and 110°C. In some examples, compressed air is directed to the exposed surfaces to help remove cleaning agent residues while heating is being performed.

[0057] Following the heating operation, the exposed surface can be treated with O2, N2, or Ar plasma. Plasma can be used to roughen the exposed surface. In some embodiments, ozone is used to condition the surface state of the exposed surface.

[0058] exist Figure 9D In this embodiment, a carrier injection layer 211 is disposed on the exposed surfaces of the bumps 130 and the first electrode layer 120 (and / or on the exposed surfaces of the light-shielding layer 110 on which the bumps 130 are not disposed). The carrier injection layer 211 is continuously lining along the exposed surfaces. More specifically, the exposed surfaces of each first electrode layer 120 are configured as the effective light-emitting area of ​​a light-emitting unit (i.e., a pixel). In this embodiment, all light-emitting units use the carrier injection layer 211. In some embodiments, the carrier injection layer 211 is used for hole injection. In some embodiments, the carrier injection layer 211 is used for electron injection. The carrier injection layer 211 continuously covers the exposed surfaces of the plurality of bumps 110 and the first electrode layer 120. In some embodiments, the carrier injection layer 211 is in contact with the bumps 110. In one embodiment, the carrier injection layer 211 is in contact with the first electrode layer 120. In some embodiments, the carrier injection layer 211 is in contact with the light-shielding layer 110 on which the bumps 130 are not disposed. In some embodiments, the carrier injection layer 211 is organic.

[0059] A first carrier transport layer 212 is disposed on the exposed surfaces of the bumps 130 and the first electrode layer 120 (and / or on the exposed surfaces of the light-shielding layer 110 on which the bumps 130 are not disposed). A carrier injection layer 211 is disposed below the first carrier transport layer 212. The first carrier transport layer 212 is continuously lined along the carrier injection layer 211. In this embodiment, all light-emitting units use the first carrier transport layer 212. In some embodiments, the first carrier transport layer 212 is used for hole injection. In some embodiments, the first carrier transport layer 212 is used for electron injection. The first carrier transport layer 212 continuously covers the plurality of bumps 130 and the first electrode layer 120 (or the light-shielding layer on which the bumps 130 are not disposed). Optionally, the first carrier transport layer 212 is in contact with the carrier injection layer 211. In some embodiments, the first carrier transport layer 212 is organic.

[0060] The second carrier transport layer 213 is disposed on top of the first carrier transport layer 212. The second carrier transport layer 213 is continuously lined along the first carrier transport layer 212. In this embodiment, all light-emitting units use the second carrier transport layer 213.

[0061] An organic emitting layer 214 is disposed on the exposed surfaces of the bumps 130 and the first electrode layer 120 (and / or on the exposed surfaces of the light-blocking layer 110 on which the bumps 130 are not disposed). The organic emitting layer 214 covers the second carrier transport layer 213. The organic emitting layer 214 completely covers the exposed second carrier transport layer 213. The organic emitting layer 214 is configured to emit a first color.

[0062] An organic carrier transport layer 215 is disposed on the organic emitter layer 214. The organic carrier transport layer 215 may be a hole or an electron transport layer. In some embodiments, the organic carrier transport layer 215 and the carrier transport layers 212 and 213 are each configured with opposite valence states.

[0063] A second electrode layer 220 is disposed on the organic carrier transport layer 215. The second electrode layer 220 covers the organic carrier transport layer 215. The second electrode layer 220 may be a metallic material, such as Ag, Mg, etc. In some embodiments, the second electrode layer 220 includes ITO (indium tin oxide) or IZO (indium zinc oxide). In some embodiments, each light-emitting unit (i.e., pixel) may have an independent second electrode layer 220.

[0064] Repeatable, such as Figures 9A-9D The operations shown are used to form light-emitting units of different colors.

[0065] This application allows the pattern to be adjusted into the desired shape according to actual needs.

[0066] The foregoing outlines some features of the embodiments, thus enabling those skilled in the art to better understand various aspects of this disclosure. Those skilled in the art should understand that this disclosure can be readily used as a basis for designing or modifying other processes and structures to achieve the same purpose and / or the same advantages as the embodiments described in this application. Those skilled in the art should also understand that this equivalent architecture does not depart from the spirit and scope of this disclosure, and that various changes, substitutions, and replacements can be made without departing from the spirit and scope of this disclosure.

[0067] Symbol Explanation

[0068] 10 Light-emitting elements

[0069] 20 Light-emitting layers

[0070] 30 Spacers

[0071] 40 Covering layer

[0072] 100 substrates

[0073] 100s1 First Surface

[0074] 110 Light-blocking layer

[0075] 110a light-absorbing layer

[0076] 110b bonding layer

[0077] 111 Bottom

[0078] 112 Top surface

[0079] 113 Sidewall

[0080] 120 First Electrode Layer

[0081] 121 Central Department

[0082] 1211 Bottom

[0083] 1212 Top surface

[0084] 122 end

[0085] 130 bump

[0086] 131 Bottom

[0087] 132 Top surface

[0088] 200 light-emitting array

[0089] 200A Organic Light Emitting Unit

[0090] 200B Organic Light Emitting Unit

[0091] 210 Organic layer

[0092] 211 Carrier Injection Layer

[0093] 212 First Carrier Transport Layer

[0094] 213 Second Carrier Transport Layer

[0095] 214 Organic emission layer

[0096] 215 Organic Carrier Transport Layer

[0097] 220 Second electrode layer

[0098] θ1 included angle

[0099] θ2 included angle

[0100] W1 width

[0101] W2 width

[0102] W3 width

[0103] W4 width

[0104] W5 width

[0105] W6 width

[0106] H1 thickness

[0107] H2 thickness

[0108] H3 thickness

Claims

1. A light-emitting element, characterized in that, include: substrate; A plurality of light-blocking layers are disposed at intervals on the first surface of the substrate; A plurality of first electrode layers are disposed on the first surface of the substrate, each of the plurality of first electrode layers being disposed between two adjacent light-shielding layers; A light-emitting layer that covers the plurality of first electrode layers; and A second electrode layer covers the light-emitting layer.

2. The light-emitting element as described in claim 1, characterized in that, Each of the plurality of first electrode layers includes a central portion and an end portion extending from the side of the central portion, the central portion being disposed between two adjacent light-shielding layers, and the end portion spanning the sidewall and part of the top surface of the adjacent light-shielding layers.

3. The light-emitting element as described in claim 2, characterized in that, The angle between the sidewall of the end of the first electrode layer and the top surface of the light-shielding layer is greater than 0 degrees and about 90 degrees.

4. The light-emitting element as described in claim 2 or 3, characterized in that, The thickness of the central portion of the first electrode layer is substantially equal to or less than the thickness of the light-shielding layer.

5. The light-emitting element according to any one of claims 1 to 3, characterized in that it further comprises a plurality of bumps disposed on the plurality of light-blocking layers, and the light-emitting layer covers the plurality of bumps.

6. The light-emitting element as described in claim 2 or 3, characterized in that, It further includes a plurality of bumps disposed on the plurality of light-blocking layers, the plurality of bumps partially covering the ends of the first electrode layer, and the light-emitting layer covering the plurality of bumps.

7. The light-emitting element as described in any one of claims 1 to 3, characterized in that, The thickness of the central portion of the first electrode layer is substantially equal to the thickness of the end portion.

8. The light-emitting element as described in any one of claims 1 to 3, characterized in that, The top width of each of the plurality of light-blocking layers is substantially equal to or less than its bottom width.

9. The light-emitting element as described in any one of claims 1 to 3, characterized in that, The angle between the sidewall of each of the plurality of light-shielding layers and the first surface of the substrate is greater than 0 degrees and about 90 degrees.

10. The light-emitting element as described in any one of claims 1 to 3, characterized in that, The plurality of light-blocking layers include a light-absorbing layer disposed on the first surface of the substrate and a bonding layer covering the light-absorbing layer.

11. A method for manufacturing a light-emitting element, characterized in that, include: Provide substrate; A plurality of light-blocking layers are formed at intervals on the first surface of the substrate; A plurality of first electrode layers are formed on the substrate, each including a central portion formed between the light-shielding layers and an end portion extending from the side of the central portion and spanning the sidewalls and part of the top surface of the adjacent light-shielding layers. A light-emitting layer is formed on the plurality of first electrode layers; and A second electrode layer is formed on the light-emitting layer.

12. The manufacturing method as described in claim 11, characterized in that, Before forming the light-emitting layer, a plurality of bumps are formed on the plurality of light-shielding layers and partially cover the ends of the first electrode layer; the light-emitting layer is formed on the plurality of first electrode layers and the plurality of light-shielding layers.

13. The manufacturing method as described in claim 11, characterized in that, The angle between the sidewall of the end of the first electrode layer and the top surface of the light-shielding layer is greater than 0 degrees and about 90 degrees.

14. The manufacturing method as described in claim 11, characterized in that, The angle between the sidewall of each of the plurality of light-shielding layers and the first surface of the substrate is greater than 0 degrees and about 90 degrees.

15. The manufacturing method as described in claim 12 or 13, characterized in that, The thickness of the central portion of the first electrode layer is substantially equal to or less than the thickness of the light-blocking layer, and the thickness of the central portion of the first electrode layer is substantially equal to the thickness of the end portion.

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