Display panel and display device

Abstract

The application discloses a display panel and a display device. The display panel comprises a substrate, a plurality of sub-pixels and a plurality of temperature sensors on one side of the substrate. One sub-pixel comprises an electrically connected light emitting element and a pixel circuit. The pixel circuit comprises a first type transistor, and the first type transistor comprises a first active layer. The temperature sensor comprises a second active layer, wherein the first active layer and the second active layer are arranged in the same layer. The display panel further comprises a light shielding layer arranged on the side of the second active layer away from the substrate. The orthographic projection of the light shielding layer on the substrate at least partially overlaps the orthographic projection of the second active layer on the substrate. The display panel of the application can utilize the existing first active layer process to synchronously realize the preparation of the second active layer, so as to facilitate the integration of the temperature sensor in the display panel. Moreover, the light shielding layer can block the light irradiated to the second active layer, thereby improving the detection sensitivity of the temperature sensor.

Description

Technical Field

[0001] This application belongs to the field of display technology, and in particular relates to a display panel and display device. Background Technology

[0002] As display technology continues to develop towards higher resolution and higher refresh rates, the heat generated inside the display panel is also gradually increasing. The concentration of heat inside the display panel may lead to brightness decay, color shift, or even accelerated aging during use.

[0003] Related technologies incorporate temperature sensors into the display panel and compensate based on the sensor's detection results to mitigate the aforementioned drawbacks. However, these technologies still suffer from high manufacturing costs and low detection accuracy, requiring further improvement. Summary of the Invention

[0004] This application provides a display panel and a display device. The display panel can integrate a temperature sensor internally with a small manufacturing cost, and then perform brightness compensation based on temperature parameters to improve display effect and service life.

[0005] On one hand, embodiments of this application provide a display panel, the display panel including a substrate and a plurality of sub-pixels and a plurality of temperature sensors located on one side of the substrate, a sub-pixel including an electrically connected light-emitting element and a pixel circuit, the pixel circuit including a first type of transistor, the first type of transistor including a first active layer, the temperature sensor including a second active layer, wherein the first active layer and the second active layer are disposed on the same layer.

[0006] The display panel also includes a light-shielding layer disposed on the side of the second active layer away from the substrate, wherein the orthographic projection of the light-shielding layer on the substrate at least partially overlaps with the orthographic projection of the second active layer on the substrate.

[0007] According to the display panel provided in this application embodiment, by integrating the second active layer of the temperature sensor with the first active layer of the first type of transistor in the pixel circuit on the same layer, and simultaneously fabricating the second active layer using the existing first active layer fabrication process within the display panel, the integration of the temperature sensor within the display panel can be achieved at a lower process cost. Furthermore, the display panel also provides a light-shielding layer on the side of the second active layer away from the substrate. This light-shielding layer blocks light incident on the second active layer, thereby improving the detection sensitivity of the temperature sensor.

[0008] In another aspect, embodiments of this application provide a display device, which includes the display panel provided in the foregoing embodiments. Attached Figure Description

[0009] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments of this application will be briefly introduced below. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0010] Figure 1 This is a plan view of a display panel according to some embodiments of this application; Figure 2 for Figure 1 The diagram shows a cross-sectional structure of the display panel at point AA. Figure 3 This is a schematic diagram showing the connection of pixel circuits in a display panel according to some embodiments of this application; Figure 4 for Figure 1 Another cross-sectional view of the display panel at point AA is shown. Figure 5 for Figure 1 Another cross-sectional view of the display panel at point AA is shown. Figure 6 for Figure 1 Another cross-sectional view of the display panel at point AA is shown. Figure 7 for Figure 1 Another cross-sectional view of the display panel at point AA is shown. Figure 8 for Figure 1 Another cross-sectional view of the display panel at point AA is shown. Figure 9 for Figure 1 Another cross-sectional view of the display panel at point AA is shown. Figure 10 for Figure 1 Another cross-sectional view of the display panel at point AA is shown. Figure 11 for Figure 1 Another cross-sectional view of the display panel at point AA is shown. Figure 12 for Figure 1 Another cross-sectional view of the display panel at point AA is shown. Figure 13 This is a schematic diagram of the structure of a display device according to some embodiments of this application.

[0011] The accompanying drawings may not be drawn to scale.

[0012] The specific markings in the attached diagram are as follows: 01. Light-emitting element; 010. Pixel definition layer; 011. Anode; 012. Light-emitting functional layer; 013. Cathode; 02. Pixel circuit; TFT1. Type I transistor; TS. Temperature sensor; 031. First electrode; 032. Second electrode; TFT2. Type II transistor; 041. Third active layer; 10. Display device; 11. Display panel; 100. Substrate; 201. First active layer; 202. Second active layer; 300, Light-shielding layer; 301, First via; 302, Second via; 310, Sublayer; 401. First conductive part; 402. Second conductive part; 403. Shielding trace; 404. Third conductive part; 500, Insulating spacer layer; 600, Planarization layer; 610, First planarization layer; 620, Second planarization layer; 700. Touch-sensitive metal part; 801. First shielding section; 802. Second shielding section; 803. Temperature detection line; 901. Color resist definition section; 902. Color resist unit; Z, the thickness direction of the display panel. Detailed Implementation

[0013] The embodiments of the technical solution of this application will now be described in detail with reference to the accompanying drawings. These embodiments are only used to more clearly illustrate the technical solution of this application and are therefore merely examples, and should not be used to limit the scope of protection of this application.

[0014] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the application; the terms “comprising” and “having”, and any variations thereof, in the specification, claims, and foregoing description of the drawings are intended to cover non-exclusive inclusion.

[0015] In the description of the embodiments of this application, technical terms such as "first" and "second" are used only to distinguish different objects and should not be construed as indicating or implying relative importance or implicitly specifying the number, specific order, or primary and secondary relationship of the indicated technical features. In the description of the embodiments of this application, "multiple" means two or more, unless otherwise explicitly defined.

[0016] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0017] In the description of the embodiments in this application, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, the character " / " in this document generally indicates that the preceding and following related objects have an "or" relationship.

[0018] In the description of the embodiments of this application, the term "multiple" refers to two or more (including two), similarly, "multiple sets" refers to two or more (including two sets), and "multiple pieces" refers to two or more (including two pieces).

[0019] In the description of the embodiments of this application, the technical terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the embodiments of this application and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this application.

[0020] In the description of the embodiments of this application, unless otherwise expressly specified and limited, technical terms such as "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. For those skilled in the art, the specific meaning of the above terms in the embodiments of this application can be understood according to the specific circumstances.

[0021] With the continuous upgrading and iteration of consumer electronics products, display technology is also developing towards higher resolution, higher refresh rates, and larger sizes. While these trends improve visual effects, they also bring thermal management challenges to display panels. Specifically, increased internal temperature of the display panel can affect the performance of its internal driving circuitry, causing threshold voltage drift in transistors and consequently affecting their normal switching, thus inducing mura problems in the display panel.

[0022] For self-emissive OLED display panels, the increase in internal temperature will accelerate the decay and aging of light-emitting devices. The difference in decay and aging rate caused by the temperature difference between different areas will further accumulate and form block mura, which restricts the optimization and improvement of display panel display consistency and lifespan.

[0023] In related technologies, some products incorporate temperature sensors within the display panel for internal temperature monitoring. Based on this temperature information, they perform positive or negative compensation for display brightness to improve display consistency and suppress lifespan degradation. However, some temperature sensors are externally mounted, resulting in monitoring results that differ significantly from the actual operating environment of the transistors, leading to suboptimal compensation. Other temperature sensors are directly integrated into the display panel to improve monitoring reliability; however, this internal architecture increases the thickness of the display panel and extends the transistor heat dissipation path.

[0024] To address the problems of the prior art, embodiments of this application provide a display panel and a display device. The display panel can integrate a temperature sensor internally with minimal manufacturing cost and thickness increment, thereby enabling brightness compensation based on temperature parameters and improving display performance and lifespan. The display panel provided in this application embodiment is described below.

[0025] Firstly, please refer to Figure 1 and Figure 2 This application provides a display panel, which includes a substrate 100 and a plurality of sub-pixels located on one side of the substrate 100. Each sub-pixel includes an electrically connected light-emitting element 01 and a pixel circuit 02. The pixel circuit 02 includes a first type transistor TFT1, and the first type transistor TFT1 includes a first active layer 201.

[0026] The display panel also includes multiple temperature sensors TS disposed on the same side of the substrate 100 as multiple sub-pixels. The temperature sensors TS include a second active layer 202, and the first active layer 201 and the second active layer 202 are disposed on the same layer.

[0027] The co-location of the first active layer 201 and the second active layer 202 means that the first active layer 201 and the second active layer 202 can be formed by the same process, and the film materials formed by the first active layer 201 and the second active layer 202 by the same process are the same, so as to reduce the process flow and reduce production costs.

[0028] Specifically, in the thickness direction Z of the display panel, the first active layer 201 and the second active layer 202 have the same dimensions. In some embodiments, the surfaces of the first active layer 201 and the second active layer 202 facing the substrate 100 are flush; in other embodiments, the film structure beneath the first active layer 201 and the second active layer 202 differs, with the surface of the first active layer 201 facing the substrate 100 being higher than the surface of the second active layer 202 facing the substrate 100, or the surface of the first active layer 201 facing the substrate 100 being lower than the surface of the second active layer 202 facing the substrate 100.

[0029] In this configuration, the temperature sensor TS and the sub-pixel can be set in a one-to-one correspondence, meaning the number of temperature sensor TS is equal to the number of sub-pixels; or, the temperature sensor TS and the sub-pixel can be set in a many-to-one correspondence, meaning the number of temperature sensor TS is greater than the number of sub-pixels; or, the temperature sensor TS and the sub-pixel can be set in a one-to-many correspondence, meaning the number of temperature sensor TS is less than the number of sub-pixels.

[0030] Please see Figure 3 , Figure 3This is a schematic diagram of the pixel circuit connection in a display panel according to some embodiments of this application. The pixel circuit includes a first transistor T1, a second transistor T2, a third transistor T3, a fourth transistor T4, a fifth transistor T5, a sixth transistor T6, a seventh transistor T7, an eighth transistor T8, and a capacitor C. The third transistor T3 is a driving transistor used to provide driving current to the light-emitting element O1. The gate, first terminal, and second terminal of the driving transistor are respectively connected to the first node N1, the third node N3, and the second node N2. The first terminal and second terminal of the fifth transistor T5 are respectively connected to the gate reset signal terminal Vref1 and the first node N1. The gate is connected to the first control signal terminal S1N to receive a reset control signal. The fifth transistor T5 is used to provide the gate reset signal Vref1 to the first node N1. The first terminal and second terminal of the second transistor T2 are respectively connected to the data voltage signal terminal Vdata and the second node N2. The gate receives the control signal SP. The second transistor T2 is used to transmit the data voltage signal Vdata to the second node N2. The first and second terminals of the fourth transistor T4 are connected to the third node N3 and the first node N1, respectively. Its gate is connected to the second control signal terminal S2N to receive control signals. The fourth transistor T4 is used for threshold compensation of the third transistor T3. The first and second terminals of the seventh transistor T7 are connected to the anode reset signal terminal Vref2 and the first terminal of the light-emitting element O1, respectively. Its gate is connected to the control signal terminal SPX. The seventh transistor T7 is used to reset the first terminal (e.g., the anode) of the light-emitting element O1. The first and second terminals of the eighth transistor T8 are connected to the bias adjustment signal terminal DVH and the second node N2, respectively. Its gate is connected to the control signal terminal SPX. The first and second terminals of the first transistor T1 are connected to the first power supply terminal PVDD and the second node N2, respectively. Its gate is connected to the light-emitting control signal terminal Emit. The first and second terminals of the sixth transistor T6 are connected to the third node N3 and the first terminal of the light-emitting element O1, respectively. Its gate is connected to the light-emitting control signal terminal Emit, used to transmit drive current to the light-emitting element O1. The second terminal of the light-emitting element O1 is connected to the second power supply terminal PVEE. It should be noted that... Figure 3 The signals transmitted at the signal terminals are represented by the same reference numerals. The embodiments of this application are only illustrated by the example that the gates of the seventh transistor T7 and the eighth transistor T8 are both connected to the control signal terminal SPX, but this disclosure is not limited thereto.

[0031] The first type of transistor TFT1 refers to a transistor element that is directly or indirectly electrically connected to the light-emitting element 01.

[0032] Optionally, the pixel circuit further includes a second type of transistor TFT2, which includes a third active layer. The third active layer is disposed in a different layer from the first active layer 201 and the second active layer 202. For example, the third active layer is disposed on the side of the first active layer 201 and the second active layer 202 closest to the substrate. This reduces the wiring density of the pixel circuit 02 in the plane and allows for the selection of a different material for the third active layer compared to the first active layer 201 and the second active layer 202, thus helping to control the manufacturing cost of the display panel.

[0033] For example, the first type of transistor TFT1 includes a fourth transistor T4 and a fifth transistor T5, and the second type of transistor TFT2 includes a first transistor T1, a second transistor T2, a third transistor T3, a sixth transistor T6, a seventh transistor T7, and an eighth transistor T8.

[0034] As an example, the first type of transistor TFT1 includes a first active layer 201, a first gate, and a first source / drain stacked together. The first gate can be disposed at the top or bottom of the first active layer 201, and the first gate and the first source / drain can be disposed on the same side or opposite side of the first active layer 201. A first gate dielectric layer is disposed between the first gate and the first active layer 201, a passivation layer is disposed between the first source / drain and the first active layer 201, and the first source / drain is connected to the first active layer 201 via a via.

[0035] The first active layer 201 and the second active layer 202 are made of the same semiconductor material so that the second active layer 202 and the first active layer 201 can be formed in the same process.

[0036] The display panel uses multiple temperature sensors (TS) to monitor the temperature of different areas and dynamically compensates for parameters such as brightness or drive voltage based on the temperature information obtained from the temperature sensors (TS).

[0037] Specifically, the temperature sensor TS is coupled to the pixel circuit 02 so that the pixel circuit 02 can adjust the brightness of the light-emitting element 01 in response to the detection result of the temperature sensor TS.

[0038] For example, the temperature sensor TS is directly connected to the pixel circuit 02, or the display panel also includes a control chip, in which both the temperature sensor TS and the pixel circuit 02 are connected to the control chip, and the control chip can receive the detection result of the temperature sensor TS and control the pixel circuit 02 based on the detection result.

[0039] As an example, the temperature sensor TS includes a second active layer 202, a second gate, and a second source / drain stacked together. The second gate can be disposed at the top or bottom of the second active layer 202, and the second gate and the second source / drain can be disposed on the same side or opposite sides of the second active layer 202. A second gate dielectric layer is disposed between the second gate and the second active layer 202, and a passivation layer is disposed between the second source / drain and the second active layer 202. The second source / drain is connected to the second active layer 202 via a via.

[0040] Optionally, the temperature sensor TS and the first type of transistor TFT1 use the same semiconductor layer, and the temperature sensor TS and the first type of transistor TFT1 can be fabricated using the same process, further reducing the process difficulty of integrating the temperature sensor TS internally, and achieving the built-in integration of the temperature sensor TS without increasing the thickness of the display panel. Specifically, the second gate is disposed on the same layer as the first gate, and the first source drain is disposed on the same layer as the second source drain.

[0041] According to the display panel provided in the first aspect embodiment of this application, the second active layer 202 in the temperature sensor TS can be fabricated simultaneously with the first active layer 201 of the first type of transistor TFT1 in the pixel circuit 02, without the need for additional masks or deposition steps. Therefore, the temperature sensor TS can be integrated into the display panel with lower process costs and less thickness increase. On the one hand, the temperature sensor TS is closer to the target detection area, and the detection result of the temperature sensor TS has higher reference value for the compensation of the pixel circuit 02. On the other hand, the co-layer architecture of the second active layer 202 and the first active layer 201 can reduce the process cost of the built-in integration of the temperature sensor TS. Furthermore, the built-in integration of the temperature sensor TS without adding additional film layers can eliminate the negative impact of the increased film layers leading to an extended heat dissipation path in the pixel circuit 02.

[0042] The display panel is also provided with a light-shielding layer 300, which is disposed on the side of the second active layer 202 away from the substrate 100, and the orthographic projection of the light-shielding layer 300 on the substrate 100 and the orthographic projection of the second active layer 202 on the substrate 100 are at least partially overlapped.

[0043] The light-shielding layer 300 refers to a layer structure capable of blocking or absorbing light. In this embodiment, the light-shielding layer 300 is at least capable of blocking or absorbing light incident on the side of the display panel where the substrate 100 is not located. For example, the light-shielding layer 300 includes a metallic material, which blocks light by reflecting it; or, the light-shielding layer 300 includes a black or dark-colored material capable of absorbing light.

[0044] The fact that the orthographic projection of the light-shielding layer 300 on the substrate 100 and the orthographic projection of the second active layer 202 on the substrate 100 at least partially overlap means that at least part of the light-shielding layer 300 is located above at least part of the second active layer 202 to reduce the propagation of light to the second active layer 202.

[0045] Understandably, during the operation of the display panel, light emitted by the light-emitting element 01 and ambient light may illuminate the second active layer 202 of the temperature sensor TS. For the temperature sensor TS, which detects based on the resistance-temperature characteristics of semiconductor materials, light illuminating the second active layer 202 generates photogenerated carriers, causing changes in the resistance value or carrier concentration of the second active layer 202, thereby interfering with the detection accuracy of the temperature sensor TS. By providing a light-shielding layer 300 on the side of the second active layer 202 away from the substrate 100, the light-shielding layer 300 can block the light illuminating the second active layer 202, reducing or avoiding interference caused by light, thereby improving the detection sensitivity of the temperature sensor TS. This allows the temperature sensor TS to more accurately reflect the internal temperature of the display panel, resulting in better display uniformity.

[0046] According to some embodiments of the first aspect of this application, the second active layer 202 includes an oxide semiconductor layer.

[0047] Optionally, the oxide semiconductor layer includes a metal oxide semiconductor. Exemplarily, the metal oxide semiconductor includes indium gallium zinc oxide, indium zinc oxide, indium gallium oxide, or other metal oxide semiconductor materials with thermosensitive properties.

[0048] Metal oxide semiconductors, represented by indium gallium zinc oxide, have advantages such as high electron mobility, high transparency, low fabrication temperature and extremely low leakage current, and are widely used in the fabrication of transistor channel layers in pixel circuits of display panels.

[0049] For example, in the pixel circuit 02, the first type of transistor TFT1 includes a fourth transistor T4 for providing an anode reset signal Vref2 and a fifth transistor T5 for providing a gate reset signal Vref1. The fourth transistor T4 and the fifth transistor T5 maintain a low off-state leakage current level through a channel layer made of metal-oxide-semiconductor material, which helps to reduce the power of the pixel circuit and improve the display effect of the display panel.

[0050] The existing oxide semiconductor layer in the display panel has thermosensitive properties. Under the combined changes of carrier concentration and carrier mobility, the threshold voltage of the temperature sensor TS, where the second active layer 202 is located, changes linearly with temperature, making it easy to obtain the ambient temperature of its region based on changes in the electrical parameters of the temperature sensor TS. Furthermore, benefiting from the high electron mobility and low leakage current characteristics of the oxide semiconductor layer, the detection speed and accuracy of the temperature sensor TS are improved.

[0051] The oxide semiconductor layer also possesses photosensitive properties, meaning it generates charge carriers and thus current gain under illumination. Temperature detection results are often characterized by the current of the temperature sensor TS. Therefore, the presence of photocurrent interferes with the readings of the temperature sensor TS, thereby affecting the compensation strategy of the display panel. In this embodiment, a light-shielding layer 300 is provided on the second active layer 202, which has photosensitive properties. This reduces the proportion of photocurrent in the temperature sensor TS by blocking direct ambient light from reaching the second active layer 202, thereby improving the detection accuracy of the temperature sensor TS. Consequently, the display panel can achieve more targeted compensation to improve display quality and lifespan.

[0052] Specifically, by adjusting the mask opening pattern in the oxide semiconductor layer fabrication process, the first active layer 201 and the second active layer 202 are formed simultaneously.

[0053] Optionally, in the pixel circuit 02, the third active layer 041 of the second type transistor TFT2 includes a non-oxide semiconductor layer.

[0054] For example, non-oxide semiconductors include low-temperature polycrystalline silicon materials.

[0055] The second type of transistor TFT2, by using a channel layer made of non-oxide semiconductor material, can achieve the transmission of signals such as data writing with a higher electron mobility, thereby improving the performance of the display panel such as refresh rate and resolution.

[0056] Therefore, by using an oxide semiconductor layer to fabricate the first active layer 201 in the first type of transistor TFT1, the reliability of the pixel circuit and the performance of the display panel can be improved. At the same time, by using an oxide semiconductor layer to fabricate the second active layer 202 in the temperature sensor TS, the temperature sensor TS can achieve better temperature sensing and thus achieve better detection accuracy.

[0057] Furthermore, since a light-shielding layer 300 is provided on the display panel above the second active layer 202, the light-shielding layer 300 can block the light directly shining on the second active layer 202, thereby reducing the interference of photocurrent in the temperature sensor TS. The display panel can improve the temperature detection accuracy and display effect while maintaining high process compatibility.

[0058] According to some embodiments of the first aspect of this application, please refer to Figure 4 or Figure 5 Within a sub-pixel, the light-emitting element 01 is located on the side of the first type transistor TFT1 away from the substrate 100, and along the thickness direction Z of the display panel, the light-shielding layer 300 is disposed between the second active layer 202 and the light-emitting element 01.

[0059] For example, the display panel includes an array substrate, a plurality of sub-pixels and a plurality of temperature sensors TS are disposed on the array substrate, a light-emitting element 01 is disposed on one side of the array substrate in the thickness direction Z, and a light-shielding layer 300 is disposed between the array substrate and the light-emitting element 01.

[0060] It is understandable that, in the thickness direction Z of the display panel, the light-emitting element 01 is disposed on the side of the first type transistor TFT1 away from the substrate 100, that is, the light-emitting element 01 is located above the pixel circuit 02. Part of the light emitted by the light-emitting element 01 will be emitted towards the substrate 100 and illuminate the second active layer 202 of the temperature sensor TS, causing a non-temperature-related drift in the resistance value, interfering with the detection accuracy of the temperature sensor TS. By disposing a light-shielding layer 300 between the second active layer 202 and the light-emitting element 01, the light-shielding layer 300 can block the light emitted by the light-emitting element 01 towards the substrate 100, reducing or preventing the light emitted by the light-emitting element 01 from illuminating the second active layer 202, thereby reducing the interference of the light from the light-emitting element 01 on the detection of the temperature sensor TS.

[0061] Optionally, the orthographic projection of the light-shielding layer 300 on the substrate 100 covers the orthographic projection of the second active layer 202 on the substrate 100, so that the light-shielding layer 300 can sufficiently block the light emitted by the light-emitting element 01 toward the second active layer 202.

[0062] Alternatively, the area of ​​the light-shielding layer 300 is larger than the area of ​​the second active layer 202, and the boundary of the orthographic projection of the light-shielding layer 300 on the substrate 100 exceeds the boundary of the orthographic projection of the second active layer 202 on the substrate 100, thereby enabling effective blocking of incident light over a wider range.

[0063] Optionally, the orthographic projection of the light-shielding layer 300 on the substrate 100 at least partially overlaps with the orthographic projection of the first active layer 201 on the substrate 100. It is understood that the first active layer 201, made of the same material as the second active layer 202, also possesses photosensitive properties. Blocking the propagation of light to the first active layer 201 through the light-shielding layer 300 helps improve defects such as threshold voltage drift that may occur in the first type of transistor TFT1 under light interference.

[0064] Alternatively, the orthogonal projection of the light-shielding layer 300 on the substrate 100 may cover the orthogonal projection of the first active layer 201 on the substrate 100, thereby further improving the reliability of the first type of transistor TFT1.

[0065] Alternatively, the light-shielding layer 300 is disposed entirely on the side of the first active layer 201 and the second active layer 202 away from the substrate 100. The light-shielding layer 300 does not require patterning using a photomask during fabrication, which helps to reduce the complexity of the process.

[0066] Therefore, while using an oxide semiconductor layer to improve the detection sensitivity of the temperature sensor TS, the light-shielding layer 300 can further reduce the propagation of light emitted by the light-emitting element 01 to the second active layer 202, thereby improving the purity of the temperature sensor TS detection result. Thus, compensation based on the detection temperature can be more timely and accurate, thereby improving the display effect and reliability of the display panel.

[0067] According to some embodiments of the first aspect of this application, the display panel further includes a first metal layer disposed on the side of the pixel circuit 02 away from the substrate 100. The first metal layer includes a first conductive portion 401, and the pixel circuit 02 is electrically interconnected with the light-emitting element 01 through the first conductive portion 401.

[0068] For example, the first conductive part 401 is used as a connection electrode between the pixel circuit 02 and the light-emitting element 01. The light-emitting element 01 includes an anode 011, a light-emitting functional layer 012 and a cathode 013 stacked in a direction away from the substrate 100. The anode 011 is connected to the first conductive part 401 via a via, and the first conductive part 401 is connected to the source or drain of the sixth transistor in the pixel circuit 02 via a ...

[0069] It is understood that an insulating spacer layer 500 is also provided on the side of the first metal layer facing the substrate 100. The insulating spacer layer 500 is located on the side of the pixel circuit 02 away from the substrate 100. The insulating spacer layer 500 can provide a flat fabrication base for the first metal layer.

[0070] Optionally, please refer to Figure 5 The insulating spacer layer 500 is reused as a light-shielding layer 300. The light-shielding layer 300 can block the bottom of the first metal layer, preventing light from entering the array substrate from above, and also blocking light from inside the array substrate that shines on the first metal layer, so as to prevent stray light from being reflected from the bottom surface of the first metal part.

[0071] Optionally, in the thickness direction Z of the display panel, the first conductive portion 401 and the light-emitting functional layer 012 do not overlap. In other words, the orthographic projection of the first conductive portion 401 on the substrate 100 does not overlap with the orthographic projection of the light-emitting functional layer 012 on the substrate 100. The light-emitting functional layer 012 includes a light-emitting material capable of generating photons under carrier drive, that is, the light-emitting functional layer 012 is the light source of the light-emitting element 01. Since the metal material has a weak absorption effect on light, and the first conductive portion 401 made of metal material serves as the connection electrode between the pixel circuit 02 and the light-emitting element 01, it usually has connection vias above and below it. Therefore, the first conductive portion 401 made of metal material forms a light transmission path between the light-emitting element 01, the pixel circuit 02, and the temperature sensor TS. By misaligning the light-emitting functional layer 012 with the first conductive part 401, stray light emitted by the light-emitting element 01 can be reduced from directly entering the array substrate through the first conductive part 401. This reduces the probability that stray light will be reflected within the array substrate and then illuminate the first active layer 201 and the second active layer 202, causing light interference.

[0072] Along the thickness direction Z of the display panel, the light-shielding layer 300 is located between the light-emitting element 01 and the first metal layer, and the orthographic projection of the first conductive part 401 on the substrate 100 and the orthographic projection of the light-shielding layer 300 on the substrate 100 at least partially overlap.

[0073] Optionally, except for the via for connecting the first conductive part 401 and the light-emitting element 01, the light-shielding layer 300 is provided to cover the first conductive part 401, that is, the orthogonal projection of the light-shielding layer 300 on the substrate 100 covers the orthogonal projection of the first conductive part 401 on the substrate 100.

[0074] Therefore, by placing the light-shielding layer 300 between the light-emitting element 01 and the first metal layer, the first metal layer can be prevented from reflecting the light emitted by the light-emitting element 01. On the one hand, the light emitted by the light-emitting element 01 is absorbed and attenuated in a timely manner, reducing the probability of it being transmitted into the array substrate. On the other hand, stray light above the array substrate can be reduced, thereby reducing the probability that stray light will be reflected multiple times inside the display panel and then pass through the light-shielding layer 300 into the array substrate. This embodiment can further reduce the probability that the second active layer 202 of the temperature sensor TS is affected by light, reduce the proportion of photocurrent in the detection result of the temperature sensor TS, and improve the detection accuracy of the temperature sensor TS.

[0075] According to some other embodiments of the first aspect of this application, along the thickness direction Z of the display panel, the light-shielding layer 300 is located between the first metal layer and the pixel circuit 02. At this time, the light-shielding layer 300 can prevent the light in the array substrate from forming a secondary reflection at the bottom of the first metal layer, which helps to reduce stray light interference of the second active layer 202 and weaken the photocurrent of the temperature sensor TS.

[0076] According to some embodiments of the first aspect of this application, please refer to Figure 4 The display panel also includes a planarization layer 600, which is disposed on the side of the first metal layer away from the substrate 100, and at least a portion of the planarization layer 600 is reused as a light-shielding layer 300.

[0077] The planarization layer 600 refers to a layered structure that is planar on the side away from the substrate 100, providing a flat foundation for the fabrication of subsequent structures. Exemplarily, the planarization layer 600 includes an organic material, which may be polyimide or acrylic resin, etc.

[0078] The at least partial reuse of the planarization layer 600 as the light-shielding layer 300 means that by modifying the planarization layer 600 or adding light-absorbing materials to the planarization layer 600, the planarization layer 600 can have both light-absorbing capacity and a flat surface, thus providing a flat preparation basis for subsequent structures while blocking light from reaching the second active layer 202.

[0079] Optionally, a planarization layer 600 is disposed between the pixel circuit 02 and the light-emitting element 01 along the thickness direction Z of the display panel. Specifically, the planarization layer 600 is disposed on the side of the temperature sensor TS away from the substrate 100.

[0080] Alternatively, a planarization layer 600 is disposed between the first metal layer and the light-emitting element 01 along the thickness direction Z of the display panel.

[0081] Therefore, by reusing at least a portion of the planarization layer 600 as the light-shielding layer 300, the integration of the light-shielding layer 300 can be achieved without increasing the film thickness. This simplifies the film structure, reduces the thickness of the display panel, and enables a thinner and lighter display panel design. Simultaneously, the planarization layer 600 has a relatively large thickness, which allows for better absorption and blocking of light.

[0082] According to some embodiments of the first aspect of this application, the light-shielding layer 300 is disposed on the side of the planarization layer 600 away from the substrate 100.

[0083] According to some embodiments of the first aspect of this application, the light-shielding layer 300 is disposed on the side of the planarization layer 600 near the substrate 100, and the planarization layer 600 covers the light-shielding layer 300.

[0084] According to some embodiments of the first aspect of this application, please refer to Figure 6 The planarization layer 600 includes a first planarization layer 610 and a second planarization layer 620 stacked along the thickness direction Z of the display panel. The first planarization layer 610 is reused as a light-shielding layer 300, and the thickness of the light-shielding layer 300 is less than the thickness of the second planarization layer 620.

[0085] Specifically, the first planarization layer 610 is disposed close to the substrate 100 and the second planarization layer 620 is disposed away from the substrate 100; or, the first planarization layer 610 is disposed away from the substrate 100 and the second planarization layer 620 is disposed close to the substrate 100.

[0086] Optionally, the second planarization layer 620 is a transparent layer.

[0087] Optionally, the first planarization layer 610 and the second planarization layer 620 comprise at least the same material to provide better continuity and interface quality at the interface between the first planarization layer 610 and the second planarization layer 620.

[0088] Optionally, the first planarization layer 610 and the second planarization layer 620 are made of different materials.

[0089] Optionally, the first planarization layer 610 and the second planarization layer 620 are in contact.

[0090] Optionally, the first planarization layer 610 and the second planarization layer 620 are spaced apart along the thickness direction Z of the display panel. That is, other film layers are disposed between the first planarization layer 610 and the second planarization layer 620, and the other film layers can be patterned layer structures or solid layer structures.

[0091] By dividing the planarization layer 600 into a thinner first planarization layer 610 and a thicker second planarization layer 620, and reusing the thinner first planarization layer 610 as a light-shielding layer, the molding quality of the light-shielding layer 300 and the uniformity of its light absorption effect within the display panel surface are improved. Simultaneously, the thicker second planarization layer 620 can more effectively fill the step differences accumulated during the fabrication of the underlying film layer, thus helping to improve the molding quality of the subsequent light-emitting element 01.

[0092] Therefore, this embodiment optimizes both the light-shielding and planarization effects by dividing the tasks of light-shielding with the thin film layer and planarization with the thick film layer, which helps to simultaneously achieve high-precision detection of the temperature sensor TS and high-quality fabrication of the light-emitting element 01.

[0093] Based on some embodiments of the first aspect of this application, please continue to refer to Figure 4 The light-shielding layer 300 is disposed on the side of the second planarization layer 620 away from the substrate 100.

[0094] Along the direction away from the substrate 100, the first metal layer, the second planarization layer 620, the light-shielding layer 300, and the light-emitting element 01 are sequentially disposed. Among them, the light-shielding layer 300 is closer to the light-emitting element 01, which can more promptly block the propagation of the light emitted by the light-emitting element 01.

[0095] Optionally, the light-shielding layer 300 is disposed in direct contact with the second planarization layer 620, giving the light-shielding layer 300 a smoother fabrication base and thus resulting in better process quality.

[0096] Therefore, this embodiment can optimize the light-shielding effect while taking into account process availability. By limiting the stacking position of the light-shielding layer 300 and the second planarization layer 620, it helps to further improve the molding quality of the light-shielding layer 300. Furthermore, preparing the second planarization layer 620 before the light-shielding layer 300 can reduce the cumulative step difference during the array substrate preparation process, which helps to reduce the thickness of the second planarization layer 620 and thus control the overall thickness of the display panel.

[0097] According to some embodiments of the first aspect of this application, the light-shielding layer 300 includes a first via 301, and the first conductive portion 401 is electrically interconnected with the light-emitting element 01 through the first via 301.

[0098] It is understood that multiple first vias 301 are provided in the light-shielding layer 300, and each sub-pixel achieves conductive interconnection between the first conductive part 401 and the anode 011 of the light-emitting element 01 through the first via 301.

[0099] Specifically, the first via 301 is filled with a conductive material, such as tungsten, copper, or aluminum. Since the conductive material has a weak absorption effect on light, a light-transmitting path for the light-shielding layer 300 is formed at the first via 301.

[0100] Optionally, in the thickness direction Z of the display panel, the first via 301 and the second active layer 202 do not overlap, that is, the orthographic projection of the first via 301 on the substrate 100 and the orthographic projection of the second active layer 202 on the substrate 100 do not overlap.

[0101] Optionally, in the thickness direction Z of the display panel, the first via 301 and the first active layer 201 do not overlap, that is, the orthographic projection of the first via 301 on the substrate 100 and the orthographic projection of the first active layer 201 on the substrate 100 do not overlap.

[0102] Optionally, in the thickness direction Z of the display panel, the first via 301 does not overlap with either the first active layer 201 or the second active layer 202. That is, the first via 301 simultaneously avoids the first active layer 201 and the second active layer 202, preventing ambient light or light emitted by the light-emitting element 01 from directly shining into the oxide semiconductor layer through the first via 301 to form a photocurrent, thereby improving the accuracy of the first type of transistor TFT1 and the temperature sensor TS.

[0103] Optionally, in the thickness direction Z of the display panel, the first via 301 does not overlap with the light-emitting functional layer 012 of the light-emitting element 01, that is, the orthogonal projection of the first via 301 on the substrate 100 and the orthogonal projection of the light-emitting functional layer 012 on the substrate 100 have no overlapping area.

[0104] By staggering the arrangement of the first via 301 within the light-shielding layer 300, the light emitted by the light-emitting element 01 and the ambient light from the outside can be prevented from directly shining on the first active layer 201 or the second active layer 202, thereby reducing the light interference received by the first type transistor TFT1 or the temperature sensor TS and improving the reliability of the pixel circuit 02, the temperature sensor TS and the display panel.

[0105] According to some embodiments of the first aspect of this application, the first metal layer further includes a second conductive portion 402, the temperature sensor TS includes a first electrode 031, the second conductive portion 402 and the first electrode 031 are electrically interconnected through a second via 302, and the second conductive portion 402 does not overlap with the light-emitting element 01 in the thickness direction Z of the display panel.

[0106] The first electrode 031 can be the source or drain of the temperature sensor TS, and the second conductive part 402 is used to provide a signal transmission path for the temperature sensor TS. For example, the second conductive part 402 is used to provide an input signal to the source of the temperature sensor TS.

[0107] Specifically, in the thickness direction Z of the display panel, the second conductive part 402 does not overlap with the light-emitting functional layer 012 of the light-emitting element 01.

[0108] Optionally, in the thickness direction Z of the display panel, the second conductive part 402 does not overlap with the entire light-emitting element 01.

[0109] Similarly, the conductive material filling the second via 302 and the second conductive part 402 connected thereto has a weak light absorption effect, and a light transmission path of the light-shielding layer 300 will be formed at the second via 302. Through the avoidance design between the second conductive part 402 and the light-emitting element 01, the light emitted by the light-emitting element 01 can be prevented from passing through the second conductive part 402 and the second via 302 and directly hitting the second active layer 202, thereby reducing the photocurrent that may occur inside the temperature sensor TS.

[0110] Optionally, the second active layer 202 has a channel region, and the second via 302 does not overlap with the channel region of the second active layer 202 along the thickness direction Z of the display panel.

[0111] Further optionally, along the thickness direction Z of the display panel, the second via 302 and the second active layer 202 do not overlap, that is, the orthographic projection of the second via 302 on the substrate 100 and the orthographic projection of the second active layer 202 on the substrate 100 have no overlapping area.

[0112] Optionally, the first metal layer further includes a third conductive portion 404, which is connected to the control electrode via of the temperature sensor TS, i.e., the third conductive portion 404 is electrically interconnected with the second gate, and the third conductive portion 404 is used to provide a gate signal to the temperature sensor TS.

[0113] Alternatively, the light-shielding layer 300 is disposed over the third conductive portion 404, such that the orthographic projection of the third conductive portion 404 on the substrate 100 falls within the orthographic projection range of the light-shielding layer 300 on the substrate 100.

[0114] Therefore, by limiting the position of the second conductive part 402, the light emitted by the light-emitting element 01 can be prevented from shining directly onto the second active layer 202, thereby reducing the light interference received by the temperature sensor TS, making the thermal response current account for a larger proportion in the output of the temperature sensor TS, thereby improving the signal purity of the temperature sensor TS, optimizing the adjustment strategy of the display panel based on the detected temperature, and improving the reliability of the display panel.

[0115] According to some embodiments of the first aspect of this application, please refer to Figure 7 The first metal layer also includes a shielding trace 403, which is at least partially disposed between the first conductive part 401 and the second conductive part 402. In the thickness direction Z of the display panel, the shielding trace 403 does not overlap with the light-emitting element 01.

[0116] The shielding trace 403 being at least partially disposed between the first conductive portion 401 and the second conductive portion 402 means that, within the plane of the first metal layer, at least a portion of the shielding trace 403 has the first conductive portion 401 and the second conductive portion 402 respectively disposed on both sides of its own extension direction, that is, the orthogonal projection of at least a portion of the shielding trace 403 on the substrate 100 is located between the orthogonal projection of the first conductive portion 401 on the substrate 100 and the orthogonal projection of the second conductive portion 402 on the substrate 100.

[0117] It is understood that the first conductive part 401 and the second conductive part 402 have different potentials and different signal sources. By patterning the first metal layer and setting a shielding trace 403 between them, the interference between the first conductive part 401 and the second conductive part 402 can be reduced.

[0118] Optionally, the shielding trace 403 is made of the same material as the first conductive part 401 and the second conductive part 402.

[0119] Optionally, in the thickness direction of the display panel, the shielding trace 403 does not overlap with at least one of the first active layer 201 and the second active layer 202. To avoid the shielding trace 403 located above the oxide semiconductor layer from aggravating stray light reflection within the array substrate, the shielding trace 403 is designed to avoid the first active layer 201 and the second active layer 202.

[0120] Optionally, the orthogonal projection of the light-shielding layer 300 on the substrate 100 covers the orthogonal projection of the shielding trace 403 on the substrate 100, that is, the light-shielding layer 300 covers the shielding trace 403.

[0121] Optionally, shielded trace 403 can be set to float, meaning shielded trace 403 has no signal input.

[0122] Optionally, the shielded trace 403 is connected to the control chip and maintains a constant potential.

[0123] Therefore, the shielding trace 403 formed by the same process of the first conductive part 401 and the second conductive part 402 can weaken or even completely shield the signal crosstalk between the first conductive part 401 and the second conductive part 402 during the use of the display panel, which helps to improve the stability and reliability of the pixel circuit 02 and the temperature sensor TS, thereby improving the display effect of the display panel.

[0124] According to some embodiments of the first aspect of this application, the surface roughness of the first metal layer on the side closer to the substrate 100 is greater than the surface roughness of the first metal layer on the side farther from the substrate 100.

[0125] Specifically, the surface roughness of the first metal layer facing the second active layer 202 is greater than the surface roughness of the first metal layer away from the second active layer 202. The surface roughness can be characterized by parameters such as the maximum in-plane height difference or the arithmetic mean deviation of the in-plane height.

[0126] Although the placement of the light transmission paths, such as the first via 301 and the second via 302, prevents the light emitted by the light-emitting element 01 and ambient light from directly hitting the second active layer 202, this light can still travel through the light transmission paths within the light-shielding layer 300 to the array substrate below it. Furthermore, since the array substrate contains pixel circuits 02, the metal material within the pixel circuits 02 reflects this light upwards. Because the first metal layer is located above the second active layer 202, the light that has traveled upwards after the first reflection may undergo a secondary reflection at the bottom surface of the first metal layer. This secondary reflection, as it travels downwards, may strike either the first active layer 201 or the second active layer 202, causing light interference and negatively impacting the reliability of the first-type transistor TFT1 and the temperature sensor TS.

[0127] Optionally, the lower surface of the first metal layer can be made into a film with a large surface roughness by adjusting the parameters of the physical vapor deposition process, such as deposition temperature, deposition rate, or gas pressure. The upper surface of the first metal layer can be made to have a smaller surface roughness by chemical mechanical planarization or by using a suitable etching process.

[0128] Therefore, by setting the surface roughness of the first metal layer closer to the substrate 100 to be greater than that of the side farther from the substrate 100, i.e., the lower surface of the first metal layer has a larger roughness, the light rays propagating upwards after a single reflection are diffusely reflected at the lower surface of the first metal layer and dispersed into multiple beams of light with different propagation directions and reduced intensity. On the one hand, this reduces the probability of light rays hitting the first active layer 201 or the second active layer 202; on the other hand, it reduces the intensity of the light rays that may hit the first active layer 201 or the second active layer 202. As a result, the first type of transistor TFT1 and the temperature sensor TS have better reliability.

[0129] According to some embodiments of the first aspect of this application, please refer to Figure 8 The display panel also includes a touch metal part 700, which is disposed on the side of the light-emitting element 01 away from the substrate 100. The orthogonal projection of the touch metal part 700 on the substrate 100 falls within the orthogonal projection range of the light-shielding layer 300 on the substrate 100.

[0130] The display panel can also integrate touch functionality. The touch metal portion 700 is located on the side of the light-emitting element 01 away from the substrate 100, i.e., above the light-emitting element 01. The touch metal portion 700 is used to transmit and receive touch signals. The touch metal portion 700 typically employs a metal mesh structure, which has high light transmittance to ensure the light emission efficiency of the display panel.

[0131] The orthographic projection of the touch metal part 700 on the substrate 100 falling within the orthographic projection range of the light-shielding layer 300 on the substrate 100 means that the boundary of the orthographic projection of the touch metal part 700 on the substrate 100 does not exceed the boundary of the orthographic projection of the light-shielding layer 300 on the substrate 100. In other words, in the thickness direction Z of the display panel, the touch metal part 700 is located directly above the light-shielding layer 300, and the light-shielding layer 300 can cover the area where the touch metal part 700 is located.

[0132] It is understood that the touch metal portion 700 located above the light-emitting element 01 can reflect the light emitted by the light-emitting element 01. The reflected light propagates downwards and may hit the second active layer 202 or the first active layer 201. By blocking the light reflected from the touch metal portion 700 by the light-shielding layer 300, it helps to further reduce the light interference that the second active layer 202 or the first active layer 201 may receive.

[0133] Optionally, the light-transmitting path within the light-shielding layer 300 avoids the contact metal portion 700. For example, the orthographic projection of the first via 301 on the substrate 100 does not overlap with the orthographic projection of the contact metal portion 700 on the substrate 100, and / or, the orthographic projection of the second via 302 on the substrate 100 does not overlap with the orthographic projection of the contact metal portion 700 on the substrate 100.

[0134] Optionally, the touch metal portion 700 includes a first touch metal layer and a second touch metal layer disposed sequentially along a direction away from the substrate 100, wherein the orthographic projection of at least one of the first touch metal layer and the second touch metal layer on the substrate 100 falls within the orthographic projection range of the light-shielding layer 300 on the substrate 100.

[0135] Alternatively, the orthographic projections of the first touch metal layer and the second touch metal layer on the substrate 100 both fall within the orthographic projection range of the light-shielding layer 300 on the substrate 100.

[0136] Therefore, when a temperature sensor TS is integrated into a touch-enabled display panel, by limiting the positional relationship between the touch metal part 700 and the light-shielding layer 300, the light reflected by the touch metal part 700 and directed toward the first active layer 201 or the second active layer 202 can be reduced, thereby improving the reliability of the first type transistor TFT1 and the temperature sensor TS and improving the display uniformity of the display panel.

[0137] According to some embodiments of the first aspect of this application, the surface roughness of the touch metal portion 700 on the side closer to the substrate 100 is greater than the surface roughness of the touch metal portion 700 on the side farther from the substrate 100.

[0138] Specifically, the surface roughness of the touch metal part 700 facing the second active layer 202 is greater than the surface roughness of the touch metal part 700 away from the second active layer 202. The surface roughness can be characterized by parameters such as the maximum in-plane height difference or the arithmetic mean deviation of the in-plane height.

[0139] For the few rays of light that, after being reflected by the touch metal portion 700, can enter the array substrate through the first via 301 or the second via 302, the lower surface of the touch metal portion 700 can be roughened to disperse the light and reduce its intensity. Simultaneously, the surface of the touch metal portion 700 away from the substrate 100 has a lower roughness, meaning the upper surface of the touch metal portion 700 is relatively smooth. This smooth upper surface helps reduce the attenuation of the touch signal by the touch metal portion 700 and improves touch sensitivity.

[0140] Optionally, the lower surface of the touch metal part 700 can be formed with a film layer having a larger surface roughness by adjusting the deposition process parameters, and the upper surface of the touch metal part 700 can be formed with a film layer having a smaller surface roughness by planarization treatment.

[0141] Therefore, by increasing the roughness of the lower surface of the touch metal part 700, the light that penetrates the light transmission path in the light shielding layer 300 along a specific direction to reach the second active layer 202 or the first active layer 201 is weakened, thereby reducing the interference of the touch metal part 700 on the first type transistor TFT1 and the temperature sensor TS.

[0142] According to some embodiments of the first aspect of this application, please refer to Figure 9 The display panel also includes a pixel definition layer 010, which includes a plurality of openings, at least a portion of the light-emitting element 01 is located within the openings, and the pixel definition layer 010 includes a light-absorbing material.

[0143] For example, the pixel definition layer 010 is disposed above the anode 011 of the light-emitting element 01 and the opening is disposed in a one-to-one correspondence with the anode 011, and the light-emitting functional layer 012 is located inside the opening.

[0144] Optionally, the light-absorbing material in the pixel definition layer 010 is the same as that in the light-shielding layer 300.

[0145] Alternatively, the pixel definition layer 010 may include organic materials.

[0146] Alternatively, the pixel definition layer 010 may be made of the same material as the light-shielding layer 300.

[0147] Optionally, the pixel definition layer 010 and the light-absorbing layer 300 have different light-absorbing materials.

[0148] Optionally, the orthographic projection of the pixel definition layer 010 on the substrate 100 covers the orthographic projection of the second active layer 202 on the substrate 100. The pixel definition layer 010 and the light-shielding layer 300 work together to form a double blocking effect on the path of ambient light to the second active layer 202, further reducing light interference at the second active layer 202 and improving the detection accuracy of the temperature sensor TS.

[0149] Therefore, by adding light-absorbing material to the pixel definition layer 010, on the one hand, it can block ambient light incident on the first active layer 201 and the second active layer 202, preventing ambient light from reaching the underlying metal traces (such as the first metal layer), reducing secondary stray light caused by metal reflection, and thus alleviating the light protection pressure downstream of the light-shielding layer 300; on the other hand, the pixel definition layer 010 can weaken the intensity of ambient light, which also reduces the probability of light transmission at the light-shielding layer 300, improving the reliability of the first type of transistor TFT1 and the temperature sensor TS. At the same time, the pixel definition layer 010 can reduce the reflection of itself and the array substrate from ambient light, which helps to improve the screen-off effect and display effect of the display panel.

[0150] According to some embodiments of the first aspect of this application, please refer to Figure 10 The display panel also includes a second metal layer, which is disposed between the second active layer 202 and the substrate 100. Along the thickness direction Z of the display panel, at least one of the first active layer 201 and the second active layer 202 overlaps with the second metal layer.

[0151] The second metal layer is disposed between the second active layer 202 and the substrate 100, that is, the second metal layer is located below the active layer. The second metal layer can serve as a light-shielding metal layer to block light emanating from the substrate 100 towards the active layer.

[0152] The second metal layer includes a first shielding portion 801 and a second shielding portion 802, which are respectively disposed corresponding to the first active layer 201 and the second active layer 202. Specifically, the orthographic projection of the first shielding portion 801 on the substrate 100 at least partially overlaps with the orthographic projection of the first active layer 201 on the substrate 100, and the orthographic projection of the second shielding portion 802 on the substrate 100 at least partially overlaps with the orthographic projection of the second active layer 202 on the substrate 100.

[0153] Optionally, the orthographic projection of the first shielding portion 801 on the substrate 100 covers the orthographic projection of the first active layer 201 on the substrate 100.

[0154] Optionally, the orthographic projection of the second shielding portion 802 on the substrate 100 covers the orthographic projection of the second active layer 202 on the substrate 100.

[0155] Optionally, the pixel circuit 02 includes at least one capacitor, and the first shielding portion 801 is multiplexed as a capacitor plate. The first shielding portion 801 can form a capacitor together with the first gate of the first transistor or other metal layers in the array substrate to reduce the negative impact of the arrangement of the first shielding portion 801 and the second shielding portion 802 on the thickness of the display panel.

[0156] Therefore, by setting a second metal layer and using the first shielding portion 801 and the second shielding portion 802 to shield the first active layer 201 and the second active layer 202 respectively, it is possible to prevent light incident from the substrate 100 direction from interfering with the first type transistor TFT1 and the temperature sensor TS, which is beneficial to improving the working stability of the pixel circuit 02 and the detection accuracy of the temperature sensor TS. The second metal layer, together with the light-shielding layer 300, forms a tight block on the ambient light incident perpendicular to the display panel onto the oxide semiconductor layer, which significantly reduces the proportion of photocurrent in the detection result of the temperature sensor TS, and helps to achieve efficient and accurate compensation of the display panel based on the detected temperature.

[0157] Based on some embodiments of the first aspect of this application, please continue to refer to Figure 8 The second metal layer also includes a temperature detection line 803, and the temperature sensor TS includes a second electrode 032. The temperature detection line 803 is electrically interconnected with the second electrode 032 through a third via.

[0158] For example, the temperature detection line 803 is the signal output line of the temperature sensor TS, and the first electrode 031 and the second electrode 032 are the source and drain of the temperature sensor TS, respectively.

[0159] Optionally, the temperature detection line 803 is insulated from the second shielding part 802.

[0160] Optionally, the temperature detection line 803 and the second shielding part 802 are an integral structure.

[0161] Therefore, by placing the temperature detection line 803 in the second metal layer, the existing wiring resources in the second metal layer can be used to transmit the temperature sensor TS detection signal without adding an extra wiring layer, which helps to reduce the thickness of the display panel and the complexity of the wiring layout.

[0162] According to some embodiments of the first aspect of this application, please refer to Figure 11 The light-shielding layer 300 includes a plurality of sub-layers 310 stacked along the thickness direction Z of the display panel, and the refractive indices of adjacent sub-layers 310 are different.

[0163] Optionally, at least one sublayer 310 of the light-shielding layer 300 is an inorganic material layer.

[0164] Further optionally, at least one sublayer 310 of the light-shielding layer 300 may be reused as an insulating layer within the array substrate. Exemplarily, the light-shielding layer 300 includes at least one of silicon nitride, silicon oxide, and silicon oxynitride.

[0165] Optionally, at least one sublayer 310 of the light-shielding layer 300 is an organic material layer.

[0166] Therefore, by setting multiple sub-layers 310 with different refractive indices, light illuminating the light-shielding layer 300 undergoes multiple reflections and transmissions at the interfaces between the sub-layers 310. This multi-layer interface structure can interfere with and control the propagation path of light, causing the light to undergo multiple reflections within the light-shielding layer 300, resulting in the gradual loss of energy or reflection back to the incident direction, thereby reducing the intensity of light that can pass through the light-shielding layer 300 to reach the second active layer 202.

[0167] According to some embodiments of the first aspect of this application, a plurality of sublayers 310 include a high refractive index layer and a low refractive index layer, wherein the high refractive index layer and the low refractive index layer are alternately stacked.

[0168] Optionally, the light-shielding layer 300 includes at least three sub-layers 310 to form a film structure in which high-refractive-index layers and low-refractive-index layers are stacked alternately.

[0169] Optionally, one of the high refractive index layer and the low refractive index layer is an inorganic material layer and the other is an organic material layer. By alternately stacking organic and inorganic material layers, the light-shielding layer 300 can have a better water and oxygen barrier capability.

[0170] Optionally, both the high-refractive-index layer and the low-refractive-index layer are inorganic material layers, which helps to control the size of the light-shielding layer 300 in the thickness direction Z of the display panel.

[0171] Therefore, the film structure formed by alternating layers of high and low refractive index layers can enhance the reflection effect of ambient light or light emitted by the light-emitting element 01 through coherent interference, thereby reducing the light transmitted to the second active layer 202 and improving the protective effect of the light-shielding layer 300 on the temperature sensor TS. Furthermore, the light-shielding layer 300, which achieves light shading through reflection, absorbs less light energy, which helps reduce the temperature rise of the light-shielding layer 300 during operation and further optimizes the detection environment of the temperature sensor TS.

[0172] According to some embodiments of the first aspect of this application, among the plurality of sublayers 310, the refractive index of the sublayers 310 gradually decreases along the direction close to the substrate 100.

[0173] Optionally, the refractive index of the plurality of sublayers 310 decreases linearly along the direction close to the substrate 100.

[0174] Optionally, the refractive index of the plurality of sublayers 310 decreases in a stepwise manner along the direction close to the substrate 100.

[0175] It is understandable that, along the direction close to the substrate 100, when light propagates from the sublayer 310 with a higher refractive index to the sublayer 310 with a lower refractive index, refraction away from the normal occurs at the interface. Therefore, ambient light or light emitted by the light-emitting element 01 gradually deflects in a direction parallel to the film surface as it propagates toward the array substrate. As light propagates through multiple sublayers 310, the propagation path is gradually bent and the propagation distance is extended, increasing the propagation path of light within the light-shielding layer 300, thus increasing the chance of absorption by the light-absorbing material in the light-shielding layer 300.

[0176] Therefore, by setting a light-shielding layer 300 with a refractive index that gradually decreases along the thickness direction Z, the amount of light transmitted to the second active layer 202 is reduced, which helps to improve the protective effect of the light-shielding layer 300 on the second active layer 202, thereby improving the detection accuracy of the temperature sensor TS.

[0177] Optionally, among the multiple sublayers 310, some sublayers 310 are stacked in an alternating manner of high refractive index layers and low refractive index layers, while other sublayers 310 show a trend of gradually decreasing refractive index along the direction close to the substrate 100.

[0178] According to some embodiments of the first aspect of this application, the material of the light-shielding layer 300 includes a negative photoresist and light-absorbing particles.

[0179] Negative photoresist is a photosensitive material that undergoes a cross-linking reaction after exposure, preventing the exposed areas from dissolving in the developer while dissolving and removing the unexposed areas. Utilizing this property of negative photoresist, the light-shielding layer 300 can be patterned into the desired shape using photolithography, facilitating localized blocking of the second active layer 202 and the first active layer 201 by the light-shielding layer 300.

[0180] The light-absorbing particles can be carbon black, black pigment, or metal oxide nanoparticles, etc. The light-absorbing particles can absorb or reflect light, thereby enabling the light-shielding layer 300 to have light-shielding ability, so that the light intensity is at least reduced when it passes through.

[0181] Therefore, by mixing negative photoresist with light-absorbing particles to prepare the light-shielding layer 300, it is convenient to use photolithography to prepare the light-shielding layer 300 with fine patterning, and the light-absorbing particles are used to absorb or reflect light to block the propagation of light to the second active layer 202.

[0182] According to some embodiments of the first aspect of this application, the size of the light-shielding layer 300 in the thickness direction Z of the display panel does not exceed 2 μm.

[0183] Optionally, when the first planarization layer 610 is reused as a light-shielding layer 300 and the light-shielding layer 300 is disposed above the second planarization layer 620, the size of the light-shielding layer 300 in the thickness direction Z of the display panel is equal everywhere, that is, the size of the light-shielding layer 300 in the thickness direction Z of the display panel at any position does not exceed 2μm.

[0184] Optionally, when the first planarization layer 610 is reused as a light-shielding layer 300 and the light-shielding layer 300 is disposed below the second planarization layer 620, the light-shielding layer 300 will form a thickness difference when it fills the protruding position of the underlying film layer. The maximum size of the light-shielding layer 300 in the thickness direction Z of the display panel does not exceed 2μm.

[0185] Optionally, the light-shielding layer 300 is patterned above the second active layer 202 and the first active layer 201. The light-shielding layer 300 is prepared after the planarization layer 600, and the dimension of the light-shielding layer 300 in the thickness direction Z of the display panel does not exceed 2μm at any position.

[0186] Optionally, the light-shielding layer 300 has a dimension of 0.8 μm or greater in the thickness direction Z of the display panel, so that the light-shielding layer 300 has a better ability to block light emitted by the light-emitting element 01 and external incident light.

[0187] Alternatively, the dimension of the light-shielding layer 300 in the thickness direction Z of the display panel is less than or equal to 1.6 μm, so that the light-shielding layer 300 has better process quality and reliability.

[0188] For example, the dimension of the light-shielding layer 300 in the thickness direction Z of the display panel is selected from one of 0.8μm, 0.9μm, 1.0μm, 1.1μm, 1.2μm, 1.3μm, 1.4μm, 1.5μm and 1.6μm or a value falling within any two of the aforementioned values.

[0189] Therefore, by limiting the size of the light-shielding layer 300 in the thickness direction Z of the display panel, it is helpful to improve the process quality of the light-shielding layer 300 while achieving the internal integration of the high-precision temperature sensor TS in the display panel with a small thickness adjustment.

[0190] According to some embodiments of the first aspect of this application, please refer to Figure 12 The display panel also includes a color resist layer, which is disposed on the side of the light-emitting element 01 away from the substrate 100. The color resist layer is used to modulate the color of the light emitted by the light-emitting element.

[0191] For example, the color resist layer includes a color resist definition section 901, which has a plurality of openings, and a color resist unit 902 is disposed in each opening. The color resist unit 902 is disposed in a one-to-one correspondence with the light-emitting element 01, and the orthogonal projection of the color resist unit 902 on the substrate 100 covers the orthogonal projection of the light-emitting element 01 on the substrate 100.

[0192] Optionally, the color resist definition section 901 includes a light-absorbing material.

[0193] Alternatively, a color resist layer is disposed on the side of the touch metal portion 700 away from the substrate 100. The color resist defining portion 901 can block ambient light from reaching the touch metal portion 700 and form a reflection.

[0194] Therefore, three barriers—a color resist defining part 901, a pixel defining layer 010, and a light-shielding layer 300—can be formed on the path of ambient light incident on the second active layer 202 or the first active layer 201, reducing the probability of ambient light being incident on the second active layer 202 or the first active layer 201 through transmission, thereby improving the reliability of the first type of transistor TFT1 and the temperature sensor TS.

[0195] Secondly, please refer to Figure 13 This application provides a display device 10, which includes a display panel 11 provided in any embodiment of the first aspect.

[0196] Since the display device 10 provided in this application embodiment includes the display panel 11 of any of the above embodiments, the display device 10 provided in this application embodiment has the beneficial effects of the display panel 11 of any of the above embodiments, which will not be repeated here.

[0197] The display device 10 provided in this application embodiment can be applied to mobile phones or any electronic product with display function. Electronic products include, but are not limited to, the following categories: televisions, laptops, desktop monitors, tablets, digital cameras, smart bracelets, smart glasses, in-vehicle displays, medical devices, industrial control equipment, touch interactive terminals, etc. This application embodiment does not make any special limitations on these categories.

[0198] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and not to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. These modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application, and they should all be covered within the scope of the claims and specification of this application. In particular, as long as there is no structural conflict, the various technical features mentioned in the embodiments can be combined in any way. This application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A display panel, characterized in that, include: A substrate and a plurality of sub-pixels located on one side of the substrate, each of the sub-pixels including an electrically connected light-emitting element and a pixel circuit; The pixel circuit includes a first type of transistor, and the first type of transistor includes a first active layer; Multiple temperature sensors are located on one side of the substrate, and each temperature sensor includes a second active layer; wherein the first active layer and the second active layer are disposed in the same layer. A light-shielding layer is located on the side of the second active layer away from the substrate, and the orthographic projection of the light-shielding layer on the substrate at least partially overlaps with the orthographic projection of the second active layer on the substrate.

2. The display panel according to claim 1, characterized in that, The second active layer includes an oxide semiconductor layer.

3. The display panel according to claim 2, characterized in that, Within the sub-pixel, the light-emitting element is located on the side of the first type of transistor away from the substrate, and along the thickness direction of the display panel, the light-shielding layer is disposed between the second active layer and the light-emitting element.

4. The display panel according to claim 3, characterized in that, The display panel further includes a first metal layer, which is disposed on the side of the pixel circuit away from the substrate. The first metal layer includes a first conductive portion, and the pixel circuit is electrically interconnected with the light-emitting element through the first conductive portion. Along the thickness direction of the display panel, the light-shielding layer is located between the light-emitting element and the first metal layer, and the orthographic projection of the first conductive portion on the substrate and the orthographic projection of the light-shielding layer on the substrate at least partially overlap.

5. The display panel according to claim 4, characterized in that, The display panel further includes a planarization layer, which is disposed between the first metal layer and the light-emitting element along the thickness direction of the display panel, and at least a portion of the planarization layer is reused as the light-shielding layer.

6. The display panel according to claim 5, characterized in that, The planarization layer includes a first planarization layer and a second planarization layer stacked along the thickness direction of the display panel. The first planarization layer is reused as the light-shielding layer, and the thickness of the light-shielding layer is less than the thickness of the second planarization layer.

7. The display panel according to claim 6, characterized in that, The light-shielding layer is disposed on the side of the second planarization layer away from the substrate.

8. The display panel according to claim 4, characterized in that, The light-shielding layer includes a first via, and the first conductive portion is electrically interconnected with the light-emitting element through the first via; Wherein, in the thickness direction of the display panel, the first via does not overlap with the second active layer, and / or, the first via does not overlap with the first active layer.

9. The display panel according to claim 4, characterized in that, The first metal layer further includes a second conductive portion, the temperature sensor includes a first electrode, the second conductive portion is electrically interconnected with the first electrode through a second via, and the second conductive portion does not overlap with the light-emitting element in the thickness direction of the display panel.

10. The display panel according to claim 9, characterized in that, The first metal layer further includes shielding traces, which are at least partially disposed between the first conductive portion and the second conductive portion, and the shielding traces do not overlap with the light-emitting element in the thickness direction of the display panel.

11. The display panel according to claim 9, characterized in that, The surface roughness of the first metal layer on the side closer to the substrate is greater than the surface roughness of the first metal layer on the side farther from the substrate.

12. The display panel according to claim 1, characterized in that, The display panel also includes a touch metal portion, which is disposed on the side of the light-emitting element away from the substrate, and the orthographic projection of the touch metal portion on the substrate falls within the orthographic projection range of the light-shielding layer on the substrate.

13. The display panel according to claim 12, characterized in that, The surface roughness of the touch metal portion closer to the substrate is greater than the surface roughness of the touch metal portion farther from the substrate.

14. The display panel according to claim 1, characterized in that, The display panel further includes a pixel definition layer, which includes a plurality of openings, at least a portion of the light-emitting element being located within the openings, and the pixel definition layer including a light-absorbing material.

15. The display panel according to claim 1, characterized in that, The display panel further includes a second metal layer disposed between the second active layer and the substrate. The second metal layer includes a first shielding portion and a second shielding portion. The orthographic projection of the first shielding portion on the substrate covers the orthographic projection of the first active layer on the substrate, and the orthographic projection of the second shielding portion on the substrate covers the orthographic projection of the second active layer on the substrate.

16. The display panel according to claim 15, characterized in that, The second metal layer also includes a temperature sensing line, the temperature sensor includes a second electrode, and the temperature sensing line is electrically interconnected with the second electrode through a third via.

17. The display panel according to claim 1, characterized in that, The light-shielding layer comprises multiple sub-layers stacked along the thickness direction of the display panel, with adjacent sub-layers having different refractive indices.

18. The display panel according to claim 17, characterized in that, The plurality of sub-layers include high-refractive-index layers and low-refractive-index layers, which are alternately stacked.

19. The display panel according to claim 17, characterized in that, In the plurality of sublayers, the refractive index of the sublayers gradually decreases along the direction close to the substrate.

20. The display panel according to claim 1, characterized in that, The material of the light-shielding layer includes a negative photoresist and light-absorbing particles.

21. The display panel according to claim 1, characterized in that, The dimension of the light-shielding layer in the thickness direction of the display panel does not exceed 2μm.

22. A display device, characterized in that, The display device includes a display panel as described in any one of claims 1 to 21.

Images