A monitoring device, method and display device of multi-film layer series OLED

Abstract

The present disclosure relates to a monitoring device, a method and a display device of a multi-film layer series OLED, the monitoring device comprising: at least two evaporation film layers, a first monitoring structure and a second monitoring structure. The evaporation film layer comprises a first evaporation structure and a second evaporation structure; the first monitoring structure comprises at least two monitoring units; the at least two monitoring units are connected one by one with the first evaporation structure of the at least two evaporation film layers, the first monitoring structure is used for monitoring the process parameters of the evaporation film layer when the first evaporation structure of the at least one evaporation film layer is completed; the second monitoring structure is connected with the second evaporation structure of the at least two evaporation film layers, and the second monitoring structure is used for monitoring the process parameters of the evaporation film layer with the composite connection relationship between the second evaporation structures of the at least two evaporation film layers. The present disclosure realizes the monitoring of the performance of each evaporation film layer and the monitoring of the composite connection between the evaporation film layers.

Description

Technical Field

[0001] This disclosure relates to the field of display technology, and in particular to a monitoring device, method and display apparatus for a multi-layer tandem OLED. Background Technology

[0002] The emergence of Organic Light-Emitting Diode (OLED) technology has brought about a tremendous revolution in the display industry. Since its initial proposal in the early 1990s, OLED has gradually become the focus of display technology due to its self-emissive nature, wide viewing angle, rich colors, and flexibility. As demands for brightness, viewing angle, and lifespan have increased, "Tandem OLED" technology has been introduced. Tandem OLED technology achieves superior display effects by connecting multiple RGB light-emitting units in series.

[0003] Conventional technologies typically monitor one vapor-deposited layer in a single-layer device, while Tandem OLED technology involves two vapor-deposited layers. Therefore, how to monitor multiple vapor-deposited layers separately, and how to monitor the bonding and interconnection between these layers, has become a critical technical problem that needs to be solved by those skilled in the art. Summary of the Invention

[0004] In order to solve the above-mentioned technical problems, or at least partially solve the above-mentioned technical problems, this disclosure provides a monitoring device, method and display device for a multi-layer tandem OLED.

[0005] This disclosure provides a monitoring device for a multi-layer tandem OLED, comprising: at least two vapor-deposited film layers, a first monitoring structure, and a second monitoring structure;

[0006] The vapor-deposited film layer includes a first vapor-deposited structure and a second vapor-deposited structure; wherein, the first vapor-deposited structure is vapor-deposited on a substrate; the second vapor-deposited structure is vapor-deposited on a substrate, or is compositely connected with the second vapor-deposited structure of other vapor-deposited film layers;

[0007] The first monitoring structure includes at least two monitoring units; the at least two monitoring units are connected one-to-one with the first vapor deposition structure of at least two vapor deposition layers; the first monitoring structure is used to monitor the process parameters of the vapor deposition layer when the first vapor deposition structure of at least one vapor deposition layer has completed vapor deposition.

[0008] The second monitoring structure is connected to a second vapor deposition structure with at least two vapor deposition layers. The second monitoring structure is used to monitor the process parameters of vapor deposition layers with composite connection relationships in the case of composite connection between the second vapor deposition structures with at least two vapor deposition layers.

[0009] Optionally, at least two vapor-deposited film layers include a first vapor-deposited film layer and a second vapor-deposited film layer; at least two monitoring units include a first monitoring unit and a second monitoring unit;

[0010] The first vapor-deposited film layer includes a first region and a second region; the second vapor-deposited film layer includes a third region and a fourth region;

[0011] The second region of the first vapor-deposited film layer is compositely connected to the fourth region of the second vapor-deposited film layer; the first monitoring unit is connected to the first region of the first vapor-deposited film layer, the second monitoring unit is connected to the third region of the second vapor-deposited film layer, and the second monitoring structure is connected to the second region of the first vapor-deposited film layer and the fourth region of the second vapor-deposited film layer respectively.

[0012] The first monitoring unit is used to monitor the process parameters of the first region of the first vapor-deposited film layer; the second monitoring unit is used to monitor the process parameters of the third region of the second vapor-deposited film layer; the second monitoring structure is used to monitor the process parameters of the second region of the first vapor-deposited film layer and the fourth region of the second vapor-deposited film layer.

[0013] The first region of the first vapor-deposited film layer and the third region of the second vapor-deposited film layer are respectively vapor-deposited on the substrate; the second region of the first vapor-deposited film layer is vapor-deposited on the substrate, and the fourth region of the second vapor-deposited film layer is vapor-deposited on the second region of the first vapor-deposited film layer.

[0014] Optionally, the first monitoring unit includes a first terminal and a second terminal; the second monitoring unit includes a third terminal and a fourth terminal;

[0015] The first terminal and the second terminal of the first monitoring unit are respectively connected to the first region of the first vapor-deposited film layer. The first monitoring unit is used to provide a first voltage to the first region of the first vapor-deposited film layer through the first terminal and the second terminal.

[0016] The third and fourth terminals of the second monitoring unit are respectively connected to the third region of the second vapor-deposited film layer. The second monitoring unit is used to provide a second voltage to the third region of the second vapor-deposited film layer through the third and fourth terminals.

[0017] The first monitoring unit is further configured to monitor the process parameters of the first region of the first vapor-deposited film layer when the first voltage is received in the first region of the first vapor-deposited film layer; the second monitoring unit is further configured to monitor the process parameters of the third region of the second vapor-deposited film layer when the second voltage is received in the third region of the second vapor-deposited film layer.

[0018] Optionally, the second monitoring structure includes a fifth terminal, a sixth terminal, a seventh terminal, and an eighth terminal;

[0019] The fifth and sixth terminals of the second monitoring structure are respectively connected to the second region of the first vapor-deposited film layer. The second monitoring structure is used to provide a third voltage to the second region of the first vapor-deposited film layer through the fifth and sixth terminals.

[0020] The seventh and eighth terminals of the second monitoring structure are respectively connected to the fourth region of the second vapor-deposited film layer. The second monitoring structure is used to provide a fourth voltage to the fourth region of the second vapor-deposited film layer through the seventh and eighth terminals.

[0021] The second monitoring structure is also used to monitor the process parameters of the second region of the first vapor-deposited film layer and the fourth region of the second vapor-deposited film layer when the second region of the first vapor-deposited film layer receives the third voltage and the fourth region of the second vapor-deposited film layer receives the fourth voltage.

[0022] This disclosure also provides a display device including at least one monitoring device of an arbitrary multilayer tandem OLED as described above.

[0023] This disclosure also provides a monitoring method for a multi-layer tandem OLED, which is applied to a monitoring device for monitoring any multi-layer tandem OLED as described above.

[0024] Anomaly monitoring methods include:

[0025] When the first vapor deposition structure completes vapor deposition of at least one vapor deposition film layer, the first monitoring structure is controlled to monitor the process parameters of the vapor deposition film layer.

[0026] A composite connection is achieved based on a second vapor deposition structure with at least two vapor deposition layers, and a second monitoring structure is used to monitor the process parameters of the vapor deposition layers with composite connection relationships in the second vapor deposition structure.

[0027] Optionally, when the first vapor deposition structure completes the vapor deposition of at least one vapor-deposited film layer, the first monitoring structure is controlled to monitor the process parameters of the vapor-deposited film layer, including:

[0028] When the first region of the first vapor-deposited film layer is completed, the first monitoring unit is controlled to acquire the first process parameters of the first region of the first vapor-deposited film layer.

[0029] Based on the comparison results between the first process parameter and the process parameter threshold, it is determined that the performance of the first vapor-deposited film layer is normal.

[0030] When the evaporation of the second vapor-deposited film layer is completed in the third region of the second vapor-deposited film layer, the second monitoring unit is controlled to acquire the second process parameters of the third region of the second vapor-deposited film layer.

[0031] Based on the comparison results between the second process parameter and the process parameter threshold, it was determined that the performance of the second vapor-deposited film layer was normal.

[0032] Optionally, when the first region of the first vapor-deposited film layer has been vapor-deposited, the first monitoring unit is controlled to acquire the first process parameters of the first region of the first vapor-deposited film layer, including:

[0033] When the first region of the first vapor-deposited film layer has completed vapor deposition, the first terminal and the second terminal of the first monitoring unit are controlled to provide a first voltage to the first region of the first vapor-deposited film layer so that the first region of the first vapor-deposited film layer is working.

[0034] When the first region of the first vapor-deposited film layer starts working based on the first voltage, the first monitoring unit is controlled to acquire the first process parameters of the first region of the first vapor-deposited film layer.

[0035] Optionally, when the second vapor-deposited film layer has completed vapor deposition in the third region, the second monitoring unit is controlled to acquire the second process parameters of the third region of the second vapor-deposited film layer, including:

[0036] When the evaporation of the second evaporation film layer is completed in the third region, the third and fourth terminals of the first monitoring unit are controlled to supply a second voltage to the third region of the second evaporation film layer so that the third region of the second evaporation film layer can work.

[0037] When the third region of the second vapor-deposited film layer starts working based on the second voltage, the control second monitoring unit acquires the second process parameters of the third region of the second vapor-deposited film layer.

[0038] Optionally, a composite connection is achieved based on a second vapor deposition structure with at least two vapor deposition layers. A second monitoring structure monitors the process parameters of the vapor deposition layers with composite connection in the second vapor deposition structure, including:

[0039] When the second region of the first vapor-deposited film layer and the fourth region of the second vapor-deposited film layer are connected in a composite manner, the fifth and sixth terminals of the control second monitoring structure are used to supply a third voltage to the second region of the first vapor-deposited film layer, and the seventh and eighth terminals of the control second monitoring structure are used to supply a fourth voltage to the fourth region of the second vapor-deposited film layer, so that the second region of the first vapor-deposited film layer and the fourth region of the second vapor-deposited film layer are working.

[0040] When the second region of the first vapor-deposited film layer starts working based on the third voltage, and the fourth region of the second vapor-deposited film layer starts working based on the fourth voltage, the control of the second monitoring structure acquires the process parameters of the second region of the first vapor-deposited film layer and the fourth region of the second vapor-deposited film layer, respectively.

[0041] This disclosure provides a monitoring device, method, and display apparatus for a multi-layer tandem OLED. The multi-layer tandem device includes at least two vapor-deposited layers, a first monitoring structure, and a second monitoring structure. Each vapor-deposited layer includes a first vapor-deposited structure and a second vapor-deposited structure. The first vapor-deposited structure of each vapor-deposited layer is directly deposited onto the substrate and has no connection relationship with other vapor-deposited layers. Therefore, when monitoring the process parameters of the first vapor-deposited structure of each vapor-deposited layer, it will not be affected by interference from other vapor-deposited layers, and the monitored process parameters only reflect the performance of that layer. The first monitoring structure includes at least two monitoring units, which are connected one-to-one with the first vapor-deposited structure of the vapor-deposited layer. Therefore, the number of monitoring units is the same as the number of vapor-deposited layers. Each monitoring unit can independently monitor the process parameters of the first vapor-deposited structure of the vapor-deposited layer connected to it. Thus, this disclosure achieves separate monitoring of each vapor-deposited layer in the multi-layer tandem OLED. The second vapor-deposited structure of the first vapor-deposited layer is directly deposited onto the substrate, and the second vapor-deposited structures of other vapor-deposited layers are sequentially composited and connected to the second vapor-deposited structure of the previous vapor-deposited layer. The second monitoring structure is used to monitor the process parameters of each vapor deposition layer in the second vapor deposition structure that has a composite connection relationship when a composite connection is completed between the second vapor deposition structure with at least two vapor deposition layers. Therefore, it can monitor the composite connection between each vapor deposition layer. Attached Figure Description

[0042] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the embodiments of this application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0043] Figure 1 This is a schematic diagram of the structure of a monitoring device for a multi-layer tandem OLED provided in an embodiment of this disclosure.

[0044] Figure 2 This is a schematic diagram of the structure of another multi-layer tandem OLED monitoring device provided in the embodiments of this disclosure.

[0045] Figure 3 This is a flowchart illustrating a monitoring method for a multi-layer tandem OLED provided in an embodiment of this disclosure.

[0046] Figure 4 This is a schematic diagram of the structure of a monitoring device for a multi-layer tandem OLED provided in an embodiment of this disclosure.

[0047] Figure 5 This is a schematic diagram of the hardware structure of a monitoring device for a multi-layer tandem OLED provided in an embodiment of this disclosure. Detailed Implementation

[0048] The features and exemplary embodiments of various aspects of this application will now be described in detail. Numerous specific details are set forth in the following detailed description in order to provide a comprehensive understanding of this application. However, it will be apparent to those skilled in the art that this application can be implemented without some of these specific details. The following description of embodiments is merely intended to provide a better understanding of this application by illustrating examples thereof.

[0049] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. The embodiments will now be described in detail with reference to the accompanying drawings.

[0050] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus that includes said element.

[0051] It should be understood that when describing the structure of a component, when referring to a layer or region as being "above" or "on top of" another layer or region, it can mean that it is directly above the other layer or region, or that it contains other layers or regions between it and the other layer or region. Furthermore, if the component is flipped over, that layer or region will be located "below" or "under" the other layer or region.

[0052] It should be understood that the term "and / or" used in this article is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, the character " / " in this article generally indicates that the preceding and following related objects have an "or" relationship.

[0053] In the embodiments of this application, the term "electrical connection" can refer to a direct electrical connection between two components, or it can refer to an electrical connection between two components via one or more other components.

[0054] In the embodiments of this application, the first node, the second node, and the third node are defined only for the convenience of describing the circuit structure, and the first node, the second node, and the third node are not actual circuit units.

[0055] Various modifications and variations can be made to this application without departing from its spirit or scope, which will be apparent to those skilled in the art. Therefore, this application is intended to cover modifications and variations falling within the scope of the corresponding claims (the claimed technical solutions) and their equivalents. It should be noted that the embodiments provided in this application can be combined with each other without contradiction.

[0056] Figure 1 This is a schematic diagram of the structure of a monitoring device for a multi-layer tandem OLED provided in an embodiment of this disclosure, as shown below. Figure 1 As shown, the monitoring device for a multi-layer tandem OLED includes: at least two vapor-deposited film layers 100, a first monitoring structure 200, and a second monitoring structure 300.

[0057] The vapor-deposited film layer 100 includes a first vapor-deposited structure 101 and a second vapor-deposited structure 102. The first vapor-deposited structure 101 is deposited on the substrate 400. The second vapor-deposited structure 102 is deposited on the substrate 400, or may be compositely connected with the second vapor-deposited structure 102 of other vapor-deposited film layers 100.

[0058] Specifically, the first vapor deposition structure 101 of each vapor deposition film layer 100 is deposited on the substrate 400, and there is no connection between the first vapor deposition structures 101 of each vapor deposition film layer 100. Therefore, when monitoring the process parameters of the first vapor deposition structure 101 of each vapor deposition film layer 100, it will not be affected by the other vapor deposition film layers 100. Thus, the monitored process parameters only reflect the performance of that film layer. Among the multiple vapor deposition film layers 100, the second vapor deposition structure 102 of the first vapor deposition film layer 100 is deposited on the substrate 400, and the second vapor deposition structures 102 of other vapor deposition film layers 100 are deposited on the second vapor deposition structure 102 of the previous vapor deposition film layer 100, so that the two are compositely connected.

[0059] The first monitoring structure 200 includes at least two monitoring units 210; the at least two monitoring units 210 are connected one-to-one with the first vapor deposition structures 101 of at least two vapor deposition layers 100, and the first monitoring structure 200 is used to monitor the process parameters of the vapor deposition layer 100 when the first vapor deposition structure 101 of at least one vapor deposition layer 100 has completed vapor deposition.

[0060] For example, the process parameters of the vapor-deposited film layer 100 include at least the thickness, current parameters, and optical parameters of the vapor-deposited film layer 100. Each monitoring unit 210 is connected to a first vapor-deposited structure 101 of the vapor-deposited film layer 100 in a one-to-one correspondence. Therefore, the number of monitoring units 210 is the same as the number of vapor-deposited film layers 100. Each monitoring unit 210 can independently monitor the process parameters of the first vapor-deposited structure 101 of the vapor-deposited film layer 100 connected to it, and the first vapor-deposited structures 101 of each vapor-deposited film layer 100 do not interfere with each other. Therefore, this disclosure can realize the separate monitoring of each vapor-deposited film layer 100 in a multi-layer tandem OLED.

[0061] It should be noted that the process parameters of the vapor-deposited film layer 100, including the thickness of the vapor-deposited film layer 100, current parameters, and optical parameters, are only examples. The process parameters can also be other parameters that reflect the performance of the vapor-deposited film layer 100, which are not specifically limited here.

[0062] The second monitoring structure 300 is connected to the second vapor deposition structure 102 of at least two vapor deposition layers 100. The second monitoring structure 300 is used to monitor the process parameters of the vapor deposition layers 100 in which the second vapor deposition structures 102 of the at least two vapor deposition layers 100 have a composite connection.

[0063] Specifically, the second monitoring structure 300 is connected to the second vapor deposition structure 102 of the multiple vapor deposition layers 100 in a composite connection. After the second vapor deposition structures 102 of the multiple vapor deposition layers 100 are compositely connected, the second monitoring structure 300 can simultaneously monitor the process parameters of the second vapor deposition structure 102 of each vapor deposition layer 100. This allows for monitoring of the composite connection between the vapor deposition layers 100. Furthermore, by independently monitoring the performance of each vapor deposition layer 100 and separately monitoring the composite connection of each vapor deposition layer, this disclosure ensures that the two monitoring methods do not interfere with each other. Therefore, it improves the accuracy of the monitored process parameters and further enhances product quality.

[0064] In some embodiments, Figure 2 A schematic diagram of the structure of another monitoring device for a multi-layer tandem OLED provided in this disclosure is shown below. Figure 2 As shown, at least two vapor-deposited film layers include a first vapor-deposited film layer 110 and a second vapor-deposited film layer 120; at least two monitoring units include a first monitoring unit 211 and a second monitoring unit 212.

[0065] The first vapor-deposited film layer 110 includes a first region 111 and a second region 112; the second vapor-deposited film layer 120 includes a third region 121 and a fourth region 122.

[0066] In this process, the first region 111 of the first vapor-deposited film layer 110 and the third region 121 of the second vapor-deposited film layer 120 are respectively vapor-deposited on the substrate 400; the second region 112 of the first vapor-deposited film layer 110 is vapor-deposited on the substrate, the fourth region 122 of the second vapor-deposited film layer 120 is vapor-deposited on the second region 112 of the first vapor-deposited film layer 110, and the fourth region 122 of the second vapor-deposited film layer 120 is compositely connected with the second region 112 of the first vapor-deposited film layer 110.

[0067] The first monitoring unit 211 is connected to the first region 111 of the first vapor-deposited film layer 110, the second monitoring unit 212 is connected to the third region 121 of the second vapor-deposited film layer 120, and the second monitoring structure 300 is connected to the second region 112 of the first vapor-deposited film layer 110 and the fourth region 122 of the second vapor-deposited film layer 120, respectively.

[0068] The first monitoring unit 211 is used to monitor the process parameters of the first region 111 of the first vapor-deposited film layer 110; the second monitoring unit 212 is used to monitor the process parameters of the third region 121 of the second vapor-deposited film layer 120; and the second monitoring structure 300 is used to monitor the process parameters of the second region 112 and the fourth region 122 of the first vapor-deposited film layer 110.

[0069] Specifically, the first region 111 of the first vapor-deposited film layer 110 and the third region 121 of the second vapor-deposited film layer 120 are respectively vapor-deposited on the substrate 400, and there is no connection between the first region 111 of the first vapor-deposited film layer 110 and the third region 121 of the second vapor-deposited film layer 120. Therefore, the first monitoring unit 211 can monitor the process parameters of the first region 111 of the first vapor-deposited film layer 110 independently, and the second monitoring unit 212 can monitor the process parameters of the third region 121 of the second vapor-deposited film layer 120 independently, and there is no interference between the first region 111 of the first vapor-deposited film layer 110 and the third region 121 of the second vapor-deposited film layer 120. Therefore, this disclosure connects the first monitoring unit 211 and the second monitoring unit 212 to the first region 111 of the first vapor deposition layer 110 and the third region 121 of the second vapor deposition layer 120 respectively, thereby realizing the independent monitoring of each vapor deposition layer in the multi-layer tandem OLED by using a monitoring unit for each vapor deposition layer.

[0070] The second monitoring structure 300 is connected to the second region 112 of the first vapor-deposited film layer 110 and the fourth region 122 of the second vapor-deposited film layer 120, respectively. After the fourth region 122 of the second vapor-deposited film layer 120 is compositely connected with the second region 112 of the first vapor-deposited film layer 110, the second monitoring structure 300 can simultaneously monitor the process parameters of the fourth region 122 of the second vapor-deposited film layer 120 and the second region 112 of the first vapor-deposited film layer 110. If any one of the process parameters of the fourth region 122 of the second vapor-deposited film layer 120 and the second region 112 of the first vapor-deposited film layer 110 is abnormal, it can be considered that the composite connection is abnormal. Thus, this disclosure realizes the monitoring of the composite connection between the fourth region 122 of the second vapor-deposited film layer 120 and the second region 112 of the first vapor-deposited film layer 110. Furthermore, this disclosure provides a first region 111 of the first vapor-deposited film layer 110 and a third region 121 of the second vapor-deposited film layer 120 with independent monitoring capabilities, as well as a second region 112 of the first vapor-deposited film layer 110 and a fourth region 122 of the second vapor-deposited film layer 120 with monitoring capabilities for composite bonding. Each monitoring method is equipped with an independent monitoring device, allowing the two monitoring methods to operate independently without interference. This improves the accuracy of the process parameters obtained from the monitoring and further enhances product quality.

[0071] In some embodiments, the first monitoring unit 211 includes a first terminal 2111 and a second terminal 2112; the second monitoring unit 212 includes a third terminal 2121 and a fourth terminal 2122.

[0072] The first terminal 2111 and the second terminal 2112 of the first monitoring unit 211 are respectively connected to the first region 111 of the first vapor-deposited film layer 110. The first monitoring unit 211 is used to provide a first voltage to the first region 111 of the first vapor-deposited film layer 110 through the first terminal 2111 and the second terminal 2112. The first monitoring unit 211 is also used to monitor the process parameters of the first region 111 of the first vapor-deposited film layer 110 when the first region 111 of the first vapor-deposited film layer 110 receives the first voltage.

[0073] For example, the process parameters include at least the current parameters and optical parameters of the first region 111 of the first vapor-deposited film layer 110. After the first monitoring unit 211 provides a first voltage to the first region 111 of the first vapor-deposited film layer 110 through the first terminal 2111 and the second terminal 2112, the first region 111 of the first vapor-deposited film layer 110 starts to work, so that current flows through the first region 111 of the first vapor-deposited film layer 110, and each color sub-pixel in the first region 111 of the first vapor-deposited film layer 110 is lit. The first monitoring unit 211 then monitors the brightness of each color sub-pixel after it is lit, and the current magnitude in the first region 111 of the first vapor-deposited film layer 110. If it is determined that the brightness meets the brightness threshold and the current magnitude meets the current threshold, it is determined that the process parameters of the first region 111 of the first vapor-deposited film layer 110 meet the requirements, and the performance of the first region 111 of the first vapor-deposited film layer 110 is normal, thereby realizing the individual monitoring of the performance of the first region 111 of the first vapor-deposited film layer 110.

[0074] The third terminal 2121 and the fourth terminal 2122 of the second monitoring unit 212 are respectively connected to the third region 121 of the second vapor-deposited film layer 120. The second monitoring unit 212 is used to provide a second voltage to the third region 121 of the second vapor-deposited film layer 120 through the third terminal 2121 and the fourth terminal 2122. The second monitoring unit 212 is also used to monitor the process parameters of the third region 121 of the second vapor-deposited film layer 120 when the second voltage is received.

[0075] For example, the process parameters include at least the current parameters and optical parameters of the third region 121 of the second vapor-deposited film layer 120. After the second monitoring unit 212 provides a second voltage to the third region 121 of the second vapor-deposited film layer 120 through the third terminal 2121 and the fourth terminal 2122, the third region 121 of the second vapor-deposited film layer 120 starts to work, so that current flows through the third region 121 of the second vapor-deposited film layer 120, and each color sub-pixel in the third region 121 of the second vapor-deposited film layer 120 is lit up. The second monitoring unit 212 then monitors the brightness of each color sub-pixel after it is lit, as well as the current magnitude in the third region 121 of the second vapor-deposited film layer 120. If the brightness and current magnitude meet the brightness threshold and the current threshold respectively, the process parameters of the third region 121 of the second vapor-deposited film layer 120 are determined to meet the requirements. Then the performance of the third region 121 of the second vapor-deposited film layer 120 is normal, thereby realizing the individual monitoring of the performance of the third region 121 of the second vapor-deposited film layer 120.

[0076] It should be noted that the process parameters, including current parameters and optical parameters, are only examples. Process parameters can also be other parameters that reflect the performance of the vapor-deposited film layer, and no specific limitations are made here.

[0077] In some embodiments, see continue to see Figure 2 The second monitoring structure 300 includes a fifth terminal 301, a sixth terminal 302, a seventh terminal 303, and an eighth terminal 304.

[0078] The fifth terminal 301 and the sixth terminal 302 of the second monitoring structure 300 are respectively connected to the second region 112 of the first vapor-deposited film layer 110. The second monitoring structure 300 is used to provide a third voltage to the second region 112 of the first vapor-deposited film layer 110 through the fifth terminal 301 and the sixth terminal 302.

[0079] The seventh terminal 303 and the eighth terminal 304 of the second monitoring structure 300 are respectively connected to the fourth region 122 of the second vapor-deposited film layer 120. The second monitoring structure 300 is used to provide a fourth voltage to the fourth region 122 of the second vapor-deposited film layer 120 through the seventh terminal 303 and the eighth terminal 304.

[0080] The second monitoring structure 300 is also used to monitor the process parameters of the second region 112 of the first vapor deposition layer 110 and the fourth region 122 of the second vapor deposition layer 120 when the second region 112 of the first vapor deposition layer 110 receives a third voltage and the fourth region 122 of the second vapor deposition layer 120 receives a fourth voltage.

[0081] For example, the process parameters include at least the current and optical parameters of the second region 112 of the first vapor-deposited film layer 110, and the current and optical parameters of the fourth region 122 of the second vapor-deposited film layer 120. After the second monitoring structure 300 provides a third voltage to the second region 112 of the first vapor-deposited film layer 110 through the fifth terminal 301 and the sixth terminal 302, the second region 112 of the first vapor-deposited film layer 110 starts to work, so that current flows through the second region 112 of the first vapor-deposited film layer 110, and each color sub-pixel in the second region 112 of the first vapor-deposited film layer 110 is lit up. After the second monitoring structure 300 provides a fourth voltage to the fourth region 122 of the second vapor deposition layer 120 through the seventh terminal 303 and the eighth terminal 304, the fourth region 122 of the second vapor deposition layer 120 starts to work, so that current flows through the fourth region 122 of the second vapor deposition layer 120, and each color sub-pixel in the fourth region 122 of the second vapor deposition layer 120 is lit up.

[0082] The second monitoring structure 300 monitors the brightness of each color sub-pixel after it is lit in the second region 112 of the first vapor-deposited layer 110 and the fourth region 122 of the second vapor-deposited layer 120, as well as the current magnitude in the second region 112 of the first vapor-deposited layer 110 and the fourth region 122 of the second vapor-deposited layer 120. If it is determined that the brightness of any one of the second region 112 of the first vapor-deposited layer 110 and the fourth region 122 of the second vapor-deposited layer 120 does not meet the brightness threshold, or that the current magnitude does not meet the current threshold, it determines that the composite connection between the second region 112 of the first vapor-deposited layer 110 and the fourth region 122 of the second vapor-deposited layer 120 is abnormal. This achieves the monitoring of the composite connection between the second region 112 of the first vapor-deposited layer 110 and the fourth region 122 of the second vapor-deposited layer 120.

[0083] It should be noted that the process parameters, including current parameters and optical parameters, are only examples. Process parameters can also be other parameters that reflect the performance of the vapor-deposited film layer, and no specific limitations are made here.

[0084] This disclosure also provides a display device, including at least one monitoring device for a multi-layer tandem OLED as described in any of the above embodiments.

[0085] It is understood that the display device provided in this application embodiment can achieve the corresponding beneficial effects of the multi-layer tandem OLED monitoring device provided in the above embodiments, which will not be elaborated here.

[0086] Figure 3 This is a flowchart illustrating a monitoring method for a multi-layer tandem OLED provided in an embodiment of the present disclosure. The monitoring method is applied to a monitoring device for monitoring the multi-layer tandem OLED provided in any of the above embodiments.

[0087] like Figure 3 As shown, the anomaly monitoring methods include S510 and S520.

[0088] S510. When the first vapor deposition structure of at least one vapor deposition film layer has completed vapor deposition, the first monitoring structure is controlled to monitor the process parameters of the vapor deposition film layer.

[0089] Specifically, after the first vapor deposition structure of at least one of the multiple vapor deposition layers completes vapor deposition, the process parameters of the vapor deposition layer can be monitored through the first monitoring structure. The first monitoring structure also includes the same number of monitoring units as the vapor deposition layers. The monitoring units are connected one-to-one with the first vapor deposition structures of the vapor deposition layers, so that each monitoring unit can monitor the process parameters of the first vapor deposition structure of the vapor deposition layer connected to it independently, and the first vapor deposition structures of each vapor deposition layer do not interfere with each other. Therefore, this disclosure can realize the separate monitoring of each vapor deposition layer in a multi-layer tandem OLED.

[0090] S520, A composite connection is completed based on a second vapor deposition structure with at least two vapor deposition film layers, and a second monitoring structure is controlled to monitor the process parameters of the vapor deposition film layers with composite connection relationship in the second vapor deposition structure.

[0091] Specifically, after at least two of the multiple vapor-deposited film layers have completed their composite connection, the composite connection status of these two vapor-deposited film layers can be monitored. Similarly, after three, four, or more of the multiple vapor-deposited film layers have completed their composite connection, the composite connection status can also be monitored. By controlling the second monitoring structure to monitor the process parameters of each vapor-deposited film layer with a composite connection relationship, if the process parameters of at least one vapor-deposited film layer are abnormal, it can be determined that there is an abnormality in the composite connection between the vapor-deposited film layers, thereby realizing the monitoring of the composite connection status between the vapor-deposited film layers.

[0092] Furthermore, by independently monitoring the performance of each vapor-deposited film layer and separately monitoring the composite bonding of each vapor-deposited film layer, this disclosure ensures that the two monitoring methods do not interfere with each other, thereby improving the accuracy of the process parameters obtained from the monitoring and further improving product quality.

[0093] In some embodiments, when the first vapor deposition structure of at least one vapor deposition film layer has completed vapor deposition, controlling the first monitoring structure to monitor the process parameters of the vapor deposition film layer includes:

[0094] When the first region of the first vapor-deposited film layer has been vapor-deposited, the first monitoring unit is controlled to acquire the first process parameters of the first region of the first vapor-deposited film layer.

[0095] Specifically, the first region of the first vapor-deposited film layer is deposited separately on the substrate. Therefore, after the first region of the first vapor-deposited film layer is deposited, the first monitoring unit can be controlled to acquire the first process parameters of the first region of the first vapor-deposited film layer. The first monitoring unit is only connected to the first region of the first vapor-deposited film layer, so the performance of the first region of the first vapor-deposited film layer can be monitored separately through the first monitoring unit.

[0096] Based on the comparison results between the first process parameter and the process parameter threshold, it was determined that the performance of the first vapor-deposited film layer was normal.

[0097] For example, the process parameters include at least thickness, current parameters, and optical parameters. After acquiring the first process parameters, such as the thickness, current parameters, and optical parameters of the first region of the first vapor-deposited film, the first monitoring unit compares the thickness threshold, current parameter threshold, and optical parameter threshold corresponding to each parameter to determine whether the performance of the first vapor-deposited film is normal.

[0098] It should be noted that the process parameters, including thickness, current, and optical parameters, are only examples. Process parameters can also be other parameters that reflect the performance of the vapor-deposited film, and no specific limitations are made here.

[0099] When the evaporation of the second vapor-deposited film layer is completed in the third region, the second monitoring unit is controlled to acquire the second process parameters of the third region of the second vapor-deposited film layer.

[0100] Specifically, the third region of the second vapor-deposited film layer is also deposited separately on the substrate and is not connected to the first region of the first vapor-deposited film layer. Therefore, after the vapor deposition of the third region of the second vapor-deposited film layer is completed, the second monitoring unit can be controlled to acquire the second process parameters of the third region of the second vapor-deposited film layer. Furthermore, the second monitoring unit is only connected to the third region of the second vapor-deposited film layer, thus enabling independent monitoring of the performance of the third region of the second vapor-deposited film layer. Since there is no connection between the third region of the second vapor-deposited film layer and the first region of the first vapor-deposited film layer, they do not interfere with each other, thereby enabling separate monitoring of each vapor-deposited film layer in a multi-layer tandem OLED.

[0101] Based on the comparison results between the second process parameter and the process parameter threshold, it was determined that the performance of the second vapor-deposited film layer was normal.

[0102] For example, the process parameters include at least thickness, current parameters, and optical parameters. After acquiring the second process parameters such as the thickness, current parameters, and optical parameters of the third region of the second vapor-deposited film, the second monitoring unit compares the thickness threshold, current parameter threshold, and optical parameter threshold corresponding to each parameter to determine whether the performance of the second vapor-deposited film is normal.

[0103] It should be noted that the process parameters, including thickness, current, and optical parameters, are only examples. Process parameters can also be other parameters that reflect the performance of the vapor-deposited film, and no specific limitations are made here.

[0104] In some embodiments, when the first region of the first vapor-deposited film layer has been vapor-deposited, the first monitoring unit is controlled to acquire the first process parameters of the first region of the first vapor-deposited film layer, including:

[0105] When the first region of the first vapor-deposited film layer has completed vapor deposition, the first terminal and the second terminal of the first monitoring unit are controlled to provide a first voltage to the first region of the first vapor-deposited film layer so that the first region of the first vapor-deposited film layer is operational.

[0106] When the first region of the first vapor-deposited film layer starts working based on the first voltage, the first monitoring unit is controlled to acquire the first process parameters of the first region of the first vapor-deposited film layer.

[0107] For example, the first process parameters include at least the current parameters and optical parameters of the first region of the first vapor-deposited film layer. After the first monitoring unit provides a first voltage to the first region of the first vapor-deposited film layer through the first terminal and the second terminal, the first region of the first vapor-deposited film layer starts to work, causing current to flow through the first region of the first vapor-deposited film layer, and each color sub-pixel in the first region of the first vapor-deposited film layer is lit. The first monitoring unit then monitors the brightness of each color sub-pixel after it is lit, as well as the current magnitude in the first region of the first vapor-deposited film layer. If it is determined that the brightness meets the brightness threshold and the current magnitude meets the current threshold, it is determined that the process parameters of the first region of the first vapor-deposited film layer meet the requirements, and the performance of the first region of the first vapor-deposited film layer is normal. This achieves individual monitoring of the performance of the first region of the first vapor-deposited film layer.

[0108] It should be noted that the first process parameters, including current parameters and optical parameters, are only examples. Process parameters can also be other parameters that reflect the performance of the vapor-deposited film layer, and no specific limitations are made here.

[0109] In some embodiments, when the evaporation of the third region of the second evaporated film layer is completed, the second monitoring unit is controlled to acquire the second process parameters of the third region of the second evaporated film layer, including:

[0110] When the evaporation of the second evaporation film layer is completed in the third region, the third and fourth terminals of the first monitoring unit are controlled to supply a second voltage to the third region of the second evaporation film layer so that the third region of the second evaporation film layer is operational.

[0111] When the third region of the second vapor-deposited film layer starts working based on the second voltage, the control second monitoring unit acquires the second process parameters of the third region of the second vapor-deposited film layer.

[0112] For example, the second process parameters include at least the current parameters and optical parameters of the third region of the second vapor-deposited film. After the second monitoring unit provides a second voltage to the third region of the second vapor-deposited film through the third and fourth terminals, the third region of the second vapor-deposited film begins to operate, causing current to flow through it and illuminating each color sub-pixel within it. The second monitoring unit then monitors the brightness of each color sub-pixel after it is illuminated, as well as the current magnitude within the third region of the second vapor-deposited film. If the brightness and current magnitude both meet the brightness threshold and the current threshold, the process parameters of the third region of the second vapor-deposited film are deemed to meet the requirements, indicating that the performance of the third region is normal. This achieves independent monitoring of the performance of the third region of the second vapor-deposited film.

[0113] It should be noted that the second process parameters, including current parameters and optical parameters, are only examples. Process parameters can also be other parameters that reflect the performance of the vapor-deposited film, and no specific limitations are made here.

[0114] In some embodiments, a composite connection is achieved based on a second vapor deposition structure with at least two vapor deposition layers. A second monitoring structure monitors the process parameters of the vapor deposition layers in the second vapor deposition structure that have a composite connection relationship, including:

[0115] When the second region of the first vapor-deposited film layer and the fourth region of the second vapor-deposited film layer are composite connected, the fifth and sixth terminals of the control second monitoring structure are used to supply a third voltage to the second region of the first vapor-deposited film layer, and the seventh and eighth terminals of the control second monitoring structure are used to supply a fourth voltage to the fourth region of the second vapor-deposited film layer, so that the second region of the first vapor-deposited film layer and the fourth region of the second vapor-deposited film layer are operational.

[0116] Specifically, after the second region of the first vapor-deposited film layer and the fourth region of the second vapor-deposited film layer complete the composite connection, the second monitoring structure provides a third voltage to the second region of the first vapor-deposited film layer through the fifth and sixth terminals. The second region of the first vapor-deposited film layer then begins to operate, allowing current to flow through it and illuminating each color sub-pixel within that region. Similarly, after the second monitoring structure provides a fourth voltage to the fourth region of the second vapor-deposited film layer through the seventh and eighth terminals, the fourth region of the second vapor-deposited film layer begins to operate, allowing current to flow through it and illuminating each color sub-pixel within that region.

[0117] When the second region of the first vapor-deposited film layer starts working based on the third voltage, and the fourth region of the second vapor-deposited film layer starts working based on the fourth voltage, the control of the second monitoring structure acquires the process parameters of the second region of the first vapor-deposited film layer and the fourth region of the second vapor-deposited film layer, respectively.

[0118] For example, the process parameters include at least the current and optical parameters of the second region of the first vapor-deposited film layer, and the current and optical parameters of the fourth region of the second vapor-deposited film layer. The second monitoring structure monitors the brightness of each color sub-pixel after it is lit in the second region of the first vapor-deposited film layer and the fourth region of the second vapor-deposited film layer, as well as the current magnitude in both regions. If it is determined that the brightness of either the second region of the first vapor-deposited film layer or the fourth region of the second vapor-deposited film layer does not meet a brightness threshold, or that the current magnitude does not meet a current threshold, then the composite connection between the second region of the first vapor-deposited film layer and the fourth region of the second vapor-deposited film layer is abnormal. This achieves the monitoring of the composite connection between the second region of the first vapor-deposited film layer and the fourth region of the second vapor-deposited film layer.

[0119] It should be noted that the process parameters, including current parameters and optical parameters, are only examples. Process parameters can also be other parameters that reflect the performance of the vapor-deposited film layer, and no specific limitations are made here.

[0120] Figure 4 This is a schematic diagram of a monitoring device for a multi-layer tandem OLED provided in an embodiment of this disclosure, used to execute the monitoring method corresponding to any of the above embodiments, such as... Figure 4 As shown, the monitoring device includes a first monitoring structure control module 610 and a second monitoring structure control module 620.

[0121] The first monitoring structure control module 610 is used to control the first monitoring structure to monitor the process parameters of the vapor deposition layer when the first vapor deposition structure of at least one vapor deposition layer has completed vapor deposition.

[0122] The second monitoring structure control module 620 is used to complete the composite connection of the second vapor deposition structure based on at least two vapor deposition film layers, and to control the second monitoring structure to monitor the process parameters of the vapor deposition film layers in the second vapor deposition structure that have a composite connection relationship.

[0123] It is understood that the monitoring device for multi-layer tandem OLEDs provided in this application embodiment can achieve the corresponding beneficial effects of the monitoring method for multi-layer tandem OLEDs provided in the above embodiments, which will not be elaborated here.

[0124] Figure 5 This is a schematic diagram of the hardware structure of a monitoring device for a multi-layer tandem OLED provided in an embodiment of this disclosure.

[0125] The monitoring device for a multi-layer tandem OLED may include a processor 701 and a memory 702 storing computer program instructions.

[0126] Specifically, the processor 701 may include a central processing unit (CPU), an application-specific integrated circuit (ASIC), or one or more integrated circuits that can be configured to implement the embodiments of this application.

[0127] Memory 702 may include a large-capacity memory for data or instructions. For example, and not limitingly, memory 702 may include a hard disk drive (HDD), a floppy disk drive, flash memory, optical disk, magneto-optical disk, magnetic tape, or a Universal Serial Bus (USB) drive, or a combination of two or more of these. Where suitable, memory 702 may include removable or non-removable (or fixed) media. Where suitable, memory 702 may be internal or external to a monitoring device for a multi-layer tandem OLED. In a particular embodiment, memory 702 is a non-volatile solid-state memory.

[0128] In a particular embodiment, memory 702 may include read-only memory (ROM), random access memory (RAM), disk storage media device, optical storage media device, flash memory device, electrical, optical, or other physical / tangible memory storage device. Thus, generally, memory includes one or more tangible (non-transitory) computer-readable storage media (e.g., memory devices) encoded with software including computer-executable instructions, and when the software is executed (e.g., by one or more processors), it is operable to perform the operations described with reference to the method according to one aspect of this disclosure.

[0129] The processor 701 reads and executes computer program instructions stored in the memory 702 to implement any of the multi-layer tandem OLED monitoring methods in the above embodiments.

[0130] In one example, the monitoring device for a multi-layer tandem OLED may further include a communication interface 703 and a bus 710. For example, Figure 5 As shown, the processor 701, memory 702, and communication interface 703 are connected through bus 710 and complete communication with each other.

[0131] The communication interface 703 is mainly used to realize communication between various modules, devices, units and / or equipment in the embodiments of this application.

[0132] Bus 710 includes hardware, software, or both, that couples components of a monitoring device for a multi-layer tandem OLED together. For example, and not limitingly, the bus may include an Accelerated Graphics Port (AGP) or other graphics bus, an Enhanced Industry Standard Architecture (EISA) bus, a Front Side Bus (FSB), HyperTransport (HT) interconnect, an Industry Standard Architecture (ISA) bus, an Infinite Bandwidth Interconnect, a Low Pin Count (LPC) bus, a memory bus, a Microchannel Architecture (MCA) bus, a Peripheral Component Interconnect (PCI) bus, a PCI-Express (PCI-X) bus, a Serial Advanced Technology Attachment (SATA) bus, a Video Electronics Standards Association Local (VLB) bus, or other suitable buses, or combinations of two or more of these. Where appropriate, bus 710 may include one or more buses. Although specific buses are described and illustrated in embodiments of this application, any suitable bus or interconnect is contemplated herein.

[0133] Furthermore, in conjunction with the monitoring method for multi-layer tandem OLEDs in the above embodiments, this application embodiment can provide a computer storage medium for implementation. This computer storage medium stores computer program instructions; when these computer program instructions are executed by a processor, they implement any of the multi-layer tandem OLED monitoring methods in the above embodiments.

[0134] The above are merely specific embodiments of this disclosure, enabling those skilled in the art to understand or implement this disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not to be limited to these embodiments, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A monitoring device for a multi-layer tandem OLED, characterized in that, include: At least two vapor-deposited film layers, each vapor-deposited film layer comprising a first vapor-deposited structure and a second vapor-deposited structure; wherein the first vapor-deposited structure is vapor-deposited on a substrate; and the second vapor-deposited structure is vapor-deposited on a substrate, or is compositely connected to the second vapor-deposited structure of other vapor-deposited film layers. The first monitoring structure includes at least two monitoring units; the at least two monitoring units are connected one-to-one with the first vapor deposition structures of at least two vapor deposition layers, and the first monitoring structure is used to monitor the process parameters of the vapor deposition layer when at least one of the first vapor deposition structures of the vapor deposition layer has completed vapor deposition. The second monitoring structure is connected to at least two second vapor deposition structures of the vapor deposition film layers. The second monitoring structure is used to monitor the process parameters of the vapor deposition film layers in which the second vapor deposition structures have a composite connection relationship when there is a composite connection between the second vapor deposition structures of the at least two vapor deposition film layers.

2. The monitoring device according to claim 1, characterized in that, The at least two vapor-deposited film layers include a first vapor-deposited film layer and a second vapor-deposited film layer; the at least two monitoring units include a first monitoring unit and a second monitoring unit; The first vapor-deposited film layer includes a first region and a second region; the second vapor-deposited film layer includes a third region and a fourth region; The second region of the first vapor-deposited film layer is compositely connected to the fourth region of the second vapor-deposited film layer; the first monitoring unit is connected to the first region of the first vapor-deposited film layer, the second monitoring unit is connected to the third region of the second vapor-deposited film layer, and the second monitoring structure is connected to the second region of the first vapor-deposited film layer and the fourth region of the second vapor-deposited film layer respectively. The first monitoring unit is used to monitor the process parameters of the first region of the first vapor-deposited film layer; The second monitoring unit is used to monitor the process parameters of the third region of the second vapor-deposited film layer; The second monitoring structure is used to monitor the process parameters of the second region of the first vapor-deposited film layer and the fourth region of the second vapor-deposited film layer; Wherein, the first region of the first vapor-deposited film layer and the third region of the second vapor-deposited film layer are respectively vapor-deposited on the substrate; the second region of the first vapor-deposited film layer is vapor-deposited on the substrate, and the fourth region of the second vapor-deposited film layer is vapor-deposited on the second region of the first vapor-deposited film layer.

3. The monitoring device according to claim 2, characterized in that, The first monitoring unit includes a first terminal and a second terminal; the second monitoring unit includes a third terminal and a fourth terminal; The first terminal and the second terminal of the first monitoring unit are respectively connected to the first region of the first vapor-deposited film layer. The first monitoring unit is used to provide a first voltage to the first region of the first vapor-deposited film layer through the first terminal and the second terminal. The third and fourth terminals of the second monitoring unit are respectively connected to the third region of the second vapor-deposited film layer. The second monitoring unit is used to provide a second voltage to the third region of the second vapor-deposited film layer through the third and fourth terminals. The first monitoring unit is further configured to monitor the process parameters of the first region of the first vapor-deposited film layer when the first voltage is received in the first region of the first vapor-deposited film layer; the second monitoring unit is further configured to monitor the process parameters of the third region of the second vapor-deposited film layer when the second voltage is received in the third region of the second vapor-deposited film layer.

4. The monitoring device according to claim 2, characterized in that, The second monitoring structure includes a fifth terminal, a sixth terminal, a seventh terminal, and an eighth terminal; The fifth and sixth terminals of the second monitoring structure are respectively connected to the second region of the first vapor-deposited film layer. The second monitoring structure is used to provide a third voltage to the second region of the first vapor-deposited film layer through the fifth and sixth terminals. The seventh and eighth terminals of the second monitoring structure are respectively connected to the fourth region of the second vapor-deposited film layer. The second monitoring structure is used to provide a fourth voltage to the fourth region of the second vapor-deposited film layer through the seventh and eighth terminals. The second monitoring structure is further configured to monitor the process parameters of the second region of the first vapor-deposited film layer and the fourth region of the second vapor-deposited film layer when the third voltage is received in the second region of the first vapor-deposited film layer and the fourth voltage is received in the fourth region of the second vapor-deposited film layer.

5. A display device, characterized in that, It includes at least one monitoring device for a multi-layer tandem OLED as described in any one of claims 1-4.

6. A monitoring method for a multi-layer tandem OLED, characterized in that, A monitoring device for monitoring a multi-layer tandem OLED as described in any one of claims 1-4; The monitoring method includes: When at least one of the first vapor deposition structures of the vapor deposition film layer has completed vapor deposition, the first monitoring structure is controlled to monitor the process parameters of the vapor deposition film layer. A composite connection is achieved based on a second vapor deposition structure with at least two vapor deposition layers, and the second monitoring structure is controlled to monitor the process parameters of the vapor deposition layers in which the second vapor deposition structure has a composite connection relationship.

7. The monitoring method according to claim 6, characterized in that, When at least one of the first vapor deposition structures of the vapor deposition film layer has completed vapor deposition, controlling the first monitoring structure to monitor the process parameters of the vapor deposition film layer includes: When the first region of the first vapor-deposited film layer is completed, the first monitoring unit is controlled to acquire the first process parameters of the first region of the first vapor-deposited film layer. Based on the comparison results between the first process parameter and the process parameter threshold, it is determined that the performance of the first vapor-deposited film layer is normal. When the evaporation of the second vapor-deposited film layer is completed in the third region of the second vapor-deposited film layer, the second monitoring unit is controlled to acquire the second process parameters of the third region of the second vapor-deposited film layer. Based on the comparison results between the second process parameter and the process parameter threshold, it is determined that the performance of the second vapor-deposited film layer is normal.

8. The monitoring method according to claim 7, characterized in that, When the evaporation of the first vapor-deposited film layer is completed in the first region, the first monitoring unit is controlled to acquire the first process parameters of the first region of the first vapor-deposited film layer, including: When the first region of the first vapor-deposited film layer is vapor-deposited, the first terminal and the second terminal of the first monitoring unit are controlled to provide a first voltage to the first region of the first vapor-deposited film layer so that the first region of the first vapor-deposited film layer is working. When the first region of the first vapor-deposited film layer starts working based on the first voltage, the first monitoring unit is controlled to acquire the first process parameters of the first region of the first vapor-deposited film layer.

9. The monitoring method according to claim 7, characterized in that, When the evaporation of the second vapor-deposited film layer is completed in the third region, the second monitoring unit is controlled to acquire the second process parameters of the third region of the second vapor-deposited film layer, including: When the evaporation of the second vapor-deposited film layer is completed in the third region, the third and fourth terminals of the first monitoring unit are controlled to provide a second voltage to the third region of the second vapor-deposited film layer so that the third region of the second vapor-deposited film layer is working. When the third region of the second vapor-deposited film layer starts working based on the second voltage, the second monitoring unit is controlled to acquire the second process parameters of the third region of the second vapor-deposited film layer.

10. The monitoring method according to claim 6, characterized in that, The second vapor deposition structure based on at least two of the vapor deposition film layers completes the composite connection, and the second monitoring structure monitors the process parameters of the vapor deposition film layers in which the second vapor deposition structure has a composite connection relationship, including: When the second region of the first vapor-deposited film layer and the fourth region of the second vapor-deposited film layer are connected in a composite manner, the fifth and sixth terminals of the second monitoring structure are controlled to provide a third voltage to the second region of the first vapor-deposited film layer, and the seventh and eighth terminals of the second monitoring structure are controlled to provide a fourth voltage to the fourth region of the second vapor-deposited film layer, so that the second region of the first vapor-deposited film layer and the fourth region of the second vapor-deposited film layer are working. When the second region of the first vapor-deposited film layer starts operating based on the third voltage, and when the fourth region of the second vapor-deposited film layer starts operating based on the fourth voltage, the second monitoring structure is controlled to acquire the process parameters of the second region of the first vapor-deposited film layer and the fourth region of the second vapor-deposited film layer, respectively.

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