A semiconductor chip package and a method of packaging the same

Abstract

The application discloses a semiconductor chip packaging piece and a packaging method thereof, and specifically comprises a substrate, a chip, an adjusting assembly and a heat conduction assembly, the chip is arranged on the substrate, the adjusting assembly is arranged on both sides of the substrate, the heat conduction assembly comprises a first heat conduction piece and a second heat conduction piece, the first heat conduction piece and the second heat conduction piece are used for dissipating heat of the substrate, the substrate is arranged between the first heat conduction piece and the second heat conduction piece, and the adjusting assembly is used for adjusting the distance between the substrate and the first heat conduction piece and the second heat conduction piece, so that the first heat conduction piece and the second heat conduction piece alternately dissipate heat of the substrate. The distance between the substrate and the first heat conduction piece and the second heat conduction piece can be flexibly adjusted through the adjusting assembly, dynamic switching of a heat dissipation path is realized, the first heat conduction piece and the second heat conduction piece can alternately undertake the heat dissipation task, and therefore the overall heat dissipation capacity is improved, the chip can maintain a stable working temperature under the condition of high power or long time operation, and therefore the use performance and reliability of the chip are improved.

Description

Technical Field

[0001] This invention relates to the field of chip integrated circuit packaging technology, and more specifically to a semiconductor chip package and its packaging method. Background Technology

[0002] Semiconductor chips are core components in integrated circuits of electronic devices, widely used in computers, communications, automotive electronics, and consumer electronics. Due to their small size and precise structure, chips typically require packaging for fixation and protection. Packaging not only ensures reliable electrical connections between the chip and external circuits but also effectively improves overall mechanical strength and operational stability. Furthermore, chip packages play multiple roles during use; besides load-bearing and protection, they are crucial for heat dissipation, signal transmission, and electromagnetic shielding, directly impacting the chip's efficiency and lifespan.

[0003] Chips continuously generate significant heat during operation. If this heat is not dissipated effectively and promptly, the chip temperature will rise continuously, leading to performance degradation and potentially even functional failure. Current technologies typically improve chip heat dissipation by filling the space between the chip and the substrate with thermally conductive adhesive or filler. This shortens the heat transfer path and reduces thermal resistance, allowing the heat generated by the chip to be conducted to the substrate more quickly. The heat is then diffused and released through the substrate or an external heat dissipation structure, maintaining stable chip operation.

[0004] In existing heat dissipation methods, the thermally conductive adhesives or fillers used between the chip and the substrate are prone to aging or material performance degradation over long-term operation, leading to a gradual decrease in their thermal conductivity and a decline in overall heat transfer efficiency. Simultaneously, the heat dissipation path of existing packages is relatively simple, and significant thermal resistance is unavoidable during heat conduction, causing heat accumulation and potential localized overheating. This not only affects the normal operation of the chip but may also shorten its lifespan. Based on these issues, existing packaging structures are insufficient to meet the practical requirements of high-power, highly integrated chip applications. Therefore, there is an urgent need to develop a new semiconductor chip package with higher heat dissipation efficiency and stronger stability to effectively overcome the shortcomings of existing technologies. Summary of the Invention

[0005] The purpose of this invention is to provide a semiconductor chip package and its packaging method to solve the technical problems of low heat dissipation efficiency, single heat dissipation path, and insufficient heat dissipation stability of existing semiconductor chip packages, which affect the performance of the chip.

[0006] To achieve this objective, the present invention adopts the following technical solution: A semiconductor chip package includes a substrate, a chip, an adjustment component, and a thermal conductive component. The chip is disposed on the substrate, the adjustment component is disposed on both sides of the substrate, and the thermal conductive component includes a first thermal conductive element and a second thermal conductive element for dissipating heat from the substrate. The substrate is disposed between the first thermal conductive element and the second thermal conductive element, and the adjustment component is used to adjust the distance between the substrate and the first and second thermal conductive elements so that the first and second thermal conductive elements alternately dissipate heat from the substrate.

[0007] Optionally, the vertical wall surface of the substrate along the first direction is configured as a sawtooth shape, the vertical wall surface of the first heat-conducting element near the substrate is matched with the shape of the vertical wall surface of the substrate along the first direction, and the vertical wall surface of the second heat-conducting element near the substrate is matched with the shape of the vertical wall surface of the substrate along the first direction.

[0008] Optionally, the adjustment assembly includes a first expansion body, a second expansion body, a first connector, and a second connector. The first expansion body and the second expansion body are respectively disposed on both sides of the substrate along a first direction and abut against the sidewall of the substrate. The first connector is used to connect the substrate and the first expansion body, and the second connector is used to connect the substrate and the second expansion body.

[0009] Optionally, the first connector includes a first contact plate and a first heat transfer plate. The first contact plate is disposed on the first expansion body and has a first guide groove. The first heat transfer plate is disposed on the substrate, and one end of the first heat transfer plate away from the substrate is slidably installed in the first guide groove. The second connector includes a second contact plate and a second heat transfer plate. The second contact plate is disposed on the second expansion body and has a second guide groove. The second heat transfer plate is disposed on the substrate, and one end of the second heat transfer plate away from the substrate is slidably installed in the second guide groove.

[0010] Optionally, a first sliding groove is formed on both sides of the first guide groove along the extension direction, and a first limiting plate is provided on both sides of the first heat transfer plate, the first limiting plate being slidably installed in the first sliding groove; a second sliding groove is formed on both sides of the second guide groove along the extension direction, and a second limiting plate is provided on both sides of the second heat transfer plate, the second limiting plate being slidably installed in the second sliding groove.

[0011] Optionally, a first slide rail is recessed along the extending direction on the vertical sidewall of the first slide groove, and a first rolling element is rotatably installed in the first slide rail, the first rolling element abutting against the vertical sidewall of the first limiting plate; a second slide rail is recessed along the extending direction on the vertical sidewall of the second slide groove, and a second rolling element is rotatably installed in the second slide rail, the second rolling element abutting against the vertical sidewall of the second limiting plate.

[0012] Optionally, a first heat dissipation hole is provided on the vertical sidewall of the first heat-conducting component, a second heat dissipation hole is provided on the vertical sidewall of the second heat-conducting component, and a third heat dissipation hole is provided on the substrate. When the substrate is attached to the first heat-conducting component, the third heat dissipation hole is directly opposite to the first heat dissipation hole. When the substrate is attached to the second heat-conducting component, the third heat dissipation hole is directly opposite to the second heat dissipation hole.

[0013] Optionally, the adjustment assembly further includes a first limiting box and a second limiting box, the first limiting box being disposed outside the first expansion body, the second limiting box being disposed outside the second expansion body, and the end faces of the first limiting box and the second limiting box being open to each other.

[0014] Optionally, viewed vertically, the extension direction of the first guide groove forms an angle of 30-60 degrees with the first direction, and the extension direction of the second guide groove is parallel to the extension direction of the first guide groove.

[0015] A packaging method for the above-mentioned semiconductor chip package includes the following steps: Step S1: Place the chip on the substrate; Step S2: Place the substrate between the first heat-conducting component and the second heat-conducting component, and install adjustment components on both sides of the substrate; Step S3: Adjust the distance between the substrate and the first and second heat-conducting components, so that the first and second heat-conducting components alternately dissipate heat from the substrate.

[0016] Compared with the prior art, the present invention has the following beneficial effects: This invention introduces an adjustment component into the semiconductor chip package, enabling flexible adjustment of the distance between the substrate and the first and second heat-conducting components, thereby achieving dynamic switching of the heat dissipation path. When the adjustment component is activated, the substrate can form good contact between different heat-conducting components, allowing the first and second heat-conducting components to alternately undertake heat dissipation tasks. Compared to a single heat dissipation path, this structure effectively disperses heat conduction pressure through multi-path heat dissipation, avoiding problems such as overload of local heat-conducting components or decreased heat dissipation efficiency, thus improving the overall heat dissipation capacity. In addition, multi-path heat dissipation can flexibly adapt to heat dissipation requirements under different chip operating conditions, allowing the chip to maintain a stable operating temperature under high power or long-term operation conditions, thereby significantly improving the chip's performance and reliability. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] The structures, proportions, sizes, etc., shown in the accompanying drawings of this specification are only for the purpose of assisting those skilled in the art in understanding and reading the content disclosed in the specification, and are not intended to limit the conditions under which the present invention can be implemented. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportions, or adjustments to the size, without affecting the effects and objectives that the present invention can produce, should still fall within the scope of the technical content disclosed in the present invention.

[0019] Figure 1 This is a schematic diagram of the overall structure of the semiconductor chip package provided in an embodiment of the present invention; Figure 2 This is a schematic diagram of the overall structure of the adjustment component and the heat conduction component provided in an embodiment of the present invention; Figure 3 This is a schematic diagram of the assembly structure of the adjustment component and the substrate provided in an embodiment of the present invention; Figure 4 This is a schematic diagram of the overall structure of the adjustment component provided in an embodiment of the present invention; Figure 5 for Figure 4 Enlarged view of point A in the middle.

[0020] Illustrations: 10, Substrate; 110, Third heat dissipation hole; 20, Chip; 30, Adjustment component; 310, First expansion body; 320, Second expansion body; 330, First connector; 331, First contact plate; 332, First heat transfer plate; 333, First guide groove; 334, First slide groove; 335, First limiting plate; 336, First slide rail; 337, First rolling element; 340, Second connector; 341, Second contact plate; 342, Second heat transfer plate; 343, Second guide groove; 344, Second slide groove; 345, Second limiting plate; 346, Second slide rail; 347, Second rolling element; 350, First limiting box; 360, Second limiting box; 40, Heat-conducting component; 410, First heat-conducting element; 411, First heat dissipation hole; 420, Second heat-conducting element; 421, Second heat dissipation hole. Detailed Implementation

[0021] To make the objectives, features, and advantages of this invention more apparent and understandable, the technical solutions of the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the embodiments described below are only some embodiments of this invention, and not all embodiments. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0022] In the description of this invention, it should be understood that the terms "upper," "lower," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. It should be noted that when a component is considered to be "connected" to another component, it can be directly connected to the other component or there may be a component positioned centrally in the connection.

[0023] The technical solution of the present invention will be further described below with reference to the accompanying drawings and specific embodiments.

[0024] Figure 1 This is a schematic diagram of the overall structure of the semiconductor chip package provided in an embodiment of the present invention; Figure 2 This is a schematic diagram of the overall structure of the adjustment component and the heat conduction component provided in an embodiment of the present invention; Figure 3 This is a schematic diagram of the assembly structure of the adjustment component and the substrate provided in an embodiment of the present invention; Figure 4 This is a schematic diagram of the overall structure of the adjustment component provided in an embodiment of the present invention; Figure 5 for Figure 4 Enlarged view of point A in the middle.

[0025] The semiconductor chip package provided in this embodiment is applied to high-performance electronic devices or integrated circuits. By improving the structure of the semiconductor chip package in this embodiment, dynamic switching of heat dissipation path is realized, which improves the overall heat dissipation capacity of the package and enhances the performance and reliability of the chip.

[0026] Please see Figures 1-5 The semiconductor chip 20 package provided in this embodiment includes a substrate 10, a chip 20, an adjustment component 30, and a heat-conducting component 40. The chip 20 is disposed on the substrate 10, the adjustment component 30 is disposed on both sides of the substrate 10, and the heat-conducting component 40 includes a first heat-conducting element 410 and a second heat-conducting element 420. The first heat-conducting element 410 and the second heat-conducting element 420 are used to dissipate heat from the substrate 10. The substrate 10 is disposed between the first heat-conducting element 410 and the second heat-conducting element 420. The adjustment component 30 is used to adjust the distance between the substrate 10 and the first heat-conducting element 410 and the second heat-conducting element 420 so that the first heat-conducting element 410 and the second heat-conducting element 420 alternately dissipate heat from the substrate 10. Specifically, the substrate 10 serves as the carrier for the chip 20 and can typically be a copper-clad ceramic substrate 10, an organic resin substrate 10, or a composite material substrate 10. This embodiment does not impose any specific limitations. The heat-conducting components 40 are disposed on both sides of the substrate 10. The first heat-conducting component 410 and the second heat-conducting component 420 can be metal heat sinks, heat-conducting blocks, or heat-conducting plates. They are preferably made of high thermal conductivity metals such as copper and aluminum or metal composite materials to ensure that heat can be quickly conducted and released.

[0027] By adjusting the component 30, the distance between the substrate 10 and the first heat-conducting element 410 and the second heat-conducting element 420 can be varied, thereby controlling the thermal contact state between the substrate 10 and different heat-conducting elements, allowing the first heat-conducting element 410 and the second heat-conducting element 420 to alternately form a tight thermally conductive connection with the substrate 10. During operation, the heat generated by the chip 20 is first transferred to the substrate 10, and then diffuses from the substrate 10 to the heat-conducting components 40 on both sides. When the adjusting component 30 is in a certain adjustment position, the substrate 10 can fit more tightly against the first heat-conducting element 410, at which point the first heat-conducting element 410 undertakes the main heat dissipation function, while the second heat-conducting element 420 is in a relatively distant position, and its heat dissipation function is weakened. When the adjusting component 30 is switched to another position, a good contact is formed between the substrate 10 and the second heat-conducting element 420, making the second heat-conducting element 420 the main heat dissipation channel.

[0028] In this way, the first heat-conducting element 410 and the second heat-conducting element 420 can alternately dissipate heat from the substrate 10, thereby achieving dynamic switching of the heat dissipation path. Since the heat dissipation task is distributed among the two heat-conducting elements, the decrease in heat dissipation efficiency and localized overheating problems caused by prolonged high-load operation of a single heat-conducting element are avoided, thus effectively improving the overall heat dissipation capacity. Simultaneously, the multi-path heat dissipation method can flexibly adapt to the workload of the chip 20, ensuring that the chip 20 remains within a safe temperature range even under high power or long-term operation, enhancing the reliability and stability of the chip 20 package.

[0029] Furthermore, the vertical wall surface of the substrate 10 along the first direction is configured as a sawtooth shape. The shape of the vertical wall surface of the first heat-conducting element 410 near the substrate 10 matches the shape of the vertical wall surface of the substrate 10 along the first direction, and the shape of the vertical wall surface of the second heat-conducting element 420 near the substrate 10 matches the shape of the vertical wall surface of the substrate 10 along the first direction. Specifically, the vertical wall surface of the substrate 10 along the first direction is designed as a sawtooth structure. The sawtooth shape refers to the fact that its surface contour has a periodic concave-convex shape, similar to the shape of a sawtooth. The above shape can be formed by machining, stamping or etching processes, which are conventional processing methods well known to those skilled in the art. The first heat-conducting element 410 and the second heat-conducting element 420 are both disposed on both sides of the substrate 10, and the vertical wall surface near the substrate 10 matches the sawtooth wall surface of the substrate 10. That is, the contact surface contour of the heat-conducting element matches the contour of the wall surface of the substrate 10, thereby forming a high fit in the contact area.

[0030] In this embodiment, by mates the contact surface of the heat-conducting component with the serrated vertical wall surface of the substrate 10, the actual contact area between the heat-conducting component and the substrate 10 is significantly increased. Compared to a flat contact surface, the serrated structure provides more contact interfaces, thereby effectively reducing thermal resistance. The heat generated by the substrate 10 can be transferred to the heat-conducting component through a larger area, thereby accelerating heat diffusion and dissipation and improving heat dissipation efficiency. In addition, the serrated contact interface can maintain a good fit even when subjected to thermal expansion or external vibration, avoiding the instability of the heat conduction path caused by thermal expansion and contraction or small displacements, thus ensuring the continuity and reliability of heat dissipation performance.

[0031] In practical applications, when chip 20 generates heat during operation, the heat is conducted to the vertical wall via substrate 10 and rapidly diffuses through the interface that matches the shape of the heat-conducting component. The heat-conducting component further conducts the heat to the external air or the connected heat dissipation system. Due to the increased contact area, the heat transfer efficiency per unit time is improved, allowing chip 20 to maintain a lower operating temperature even under high-power operation, avoiding performance degradation or failure due to overheating, thereby extending the lifespan of chip 20 and improving its operational stability.

[0032] Further, the adjustment assembly 30 includes a first expansion body 310, a second expansion body 320, a first connector 330, and a second connector 340. The first expansion body 310 and the second expansion body 320 are respectively disposed on both sides of the substrate 10 along a first direction and abut against the sidewall of the substrate 10. The first connector 330 is used to connect the substrate 10 and the first expansion body 310, and the second connector 340 is used to connect the substrate 10 and the second expansion body 320. Specifically, the expansion body can undergo volume change under heating conditions, and it can be implemented using thermal expansion alloy materials, phase change materials, or liquid-filled expansion bladders, etc., all of which are well known to those skilled in the art. The first connector 330 and the second connector 340 are respectively used to connect the substrate 10 to the corresponding expansion body to ensure reliable heat transfer between the substrate 10 and the expansion body.

[0033] In actual operation, initially, the substrate 10 is in contact with the first heat-conducting element 410, while the second heat-conducting element 420 is separated. At this time, the first heat-conducting element 410 undertakes the main heat dissipation function, and the heat generated by the chip 20 is transferred to the first heat-conducting element 410 for release via the substrate 10. At this time, the contact area between the substrate 10 and the first connector 330 is larger than the contact area between the substrate 10 and the second connector 340, resulting in more heat being transferred from the substrate 10 to the first expansion body 310. The first expansion body 310 expands significantly after being heated and exerts a pushing force on the substrate 10 along the first direction, causing the substrate 10 to gradually move towards the second heat-conducting element 420. As the substrate 10 gradually approaches and forms close contact with the second heat-conducting element 420, the first and second heat-conducting elements 410 together dissipate heat from the substrate 10, further improving heat dissipation efficiency. As the process continues, once the substrate 10 is fully in contact with the second heat-conducting element 420, it detaches from the first heat-conducting element 410. At this point, the second heat-conducting element 420 assumes the main heat dissipation function. Meanwhile, the contact area between the substrate 10 and the second connector 340 is larger than the contact area with the first connector 330. More of the heat generated by the chip 20 is transferred to the second expansion body 320. The second expansion body 320 undergoes a significant volume change after being heated and pushes the substrate 10 in the opposite direction, causing the substrate 10 to gradually move closer to the first heat-conducting element 410. Finally, the substrate 10 re-establishes close contact with the first heat-conducting element 410, completing the switching of the heat dissipation path. The first heat-conducting element 410 and the second heat-conducting element 420 achieve alternating heat dissipation. Through this cyclical process, the substrate 10 forms a periodic heat dissipation path switching between the first heat-conducting element 410 and the second heat-conducting element 420, ensuring that the heat dissipation structure always maintains a highly efficient heat transfer state.

[0034] This embodiment, by setting up a thermally expandable first expansion body 310 and a second expansion body 320, and utilizing their thermally changed volume characteristics, combined with the area difference design of the first connector 330 and the second connector 340, realizes the reciprocating movement of the substrate 10 between different heat-conducting components, so that the heat-conducting components alternately participate in heat dissipation, effectively improving the heat dissipation efficiency and stability of the chip 20 package during high power and long-term operation.

[0035] Further, the first connector 330 includes a first contact plate 331 and a first heat transfer plate 332. The first contact plate 331 is disposed on the first expansion body 310 and has a first guide groove 333. The first heat transfer plate 332 is disposed on the substrate 10, and one end of the first heat transfer plate 332 away from the substrate 10 is slidably installed in the first guide groove 333. The second connector 340 includes a second contact plate 341 and a second heat transfer plate 342. The second contact plate 341 is disposed on the second expansion body 320 and has a second guide groove 343. The second heat transfer plate 342 is disposed on the substrate 10, and one end of the second heat transfer plate 342 away from the substrate 10 is slidably installed in the second guide groove 343. Specifically, the first heat transfer plate 332 is disposed on the substrate 10, and its end away from the substrate 10 is slidably mounted in the first guide groove 333, realizing a movable thermal connection between the substrate 10 and the first expansion body 310; the second heat transfer plate 342 is disposed on the substrate 10, and its end away from the substrate 10 is also slidably mounted in the second guide groove 343. The guide groove is used to limit the sliding direction of the heat transfer plate, thereby ensuring the accuracy of the path of movement of the substrate 10, and it can be a straight groove or a dovetail groove; the heat transfer plate refers to the heat conduction component mounted on the substrate 10, which can be made of a high thermal conductivity metal material, and is used to conduct heat on the substrate 10 to the expansion body.

[0036] In actual operation, the substrate 10 moves back and forth along the first direction under the thermal drive of the expansion body. The first heat transfer plate 332 slides in the first guide groove 333, and the second heat transfer plate 342 slides in the second guide groove 343, ensuring that the path of the substrate 10 is restricted and stable during the movement, thereby avoiding poor contact caused by the substrate 10 offset or tilt. Since the contact accuracy between the substrate 10 and the first heat-conducting element 410 and the second heat-conducting element 420 is guaranteed, the substrate 10 can maintain a good fit with the heat-conducting element in each switching process, thereby achieving efficient heat conduction and heat dissipation. At the same time, the reliable heat transfer channel between the heat transfer plate and the expansion body ensures that the expansion body can quickly respond to the temperature change of the substrate 10, improving the sensitivity and reliability of the adjustment component 30 to the switching of the heat dissipation path.

[0037] Furthermore, first sliding grooves 334 are formed on both sides of the first guide groove 333 along the extending direction, and first limiting plates 335 are provided on both sides of the first heat transfer plate 332, with the first limiting plates 335 slidably installed in the first sliding grooves 334; second sliding grooves 344 are formed on both sides of the second guide groove 343 along the extending direction, and second limiting plates 345 are provided on both sides of the second heat transfer plate 342, with the second limiting plates 345 slidably installed in the second sliding grooves 344. Specifically, the limiting plates are protruding parts fixed to both sides of the heat transfer plate, which can usually be obtained by metal processing or integral molding, and their function is to limit the displacement of the heat transfer plate in the guide groove.

[0038] In actual operation, when the substrate 10 moves along the first direction under the heat-driven expansion body, when the first heat transfer plate 332 slides in the first guide groove 333, the first limiting plates 335 on both sides of it slide synchronously along the first sliding groove 334. When the second heat transfer plate 342 slides in the second guide groove 343, the second limiting plates 345 on both sides of it slide synchronously along the second sliding groove 344. Through the cooperation of the limiting plates and the sliding groove, the contact area between the heat transfer plate and the contact plate is increased. The increased contact interface between the limiting plates and the sliding groove forms an additional heat transfer path, which allows the heat on the substrate 10 to be transferred to the expansion body more quickly through the heat transfer plate. At the same time, it accelerates the heating and volume change response speed of the expansion body, making the switching of the substrate 10 between heat-conducting components more timely and stable.

[0039] Furthermore, a first slide rail 336 is recessed along the extending direction on the vertical sidewall of the first slide groove 334, and a first rolling element 337 is rotatably mounted within the first slide rail 336, abutting against the vertical sidewall of the first limiting plate 335; a second slide rail 346 is recessed along the extending direction on the vertical sidewall of the second slide groove 344, and a second rolling element 347 is rotatably mounted within the second slide rail 346, abutting against the vertical sidewall of the second limiting plate 345. Specifically, the abutment of the first rolling element 337 against the first limiting plate 335 and the abutment of the second rolling element 347 against the second limiting plate 345 changes the contact mode of the limiting plate in the slide groove from surface contact sliding friction to point contact rolling friction, reducing frictional resistance and thus improving the smoothness of the heat transfer plate sliding in the guide groove, thereby further ensuring the smoothness of the sliding of the substrate 10.

[0040] In practical implementation, the rolling element can be a ball, roller or cylindrical needle roller structure. Different rolling elements have mature applications and processing technology in actual production, and those skilled in the art can choose according to actual needs.

[0041] Furthermore, a first heat dissipation hole 411 is formed on the vertical sidewall of the first heat-conducting element 410, a second heat dissipation hole 421 is formed on the vertical sidewall of the second heat-conducting element 420, and a third heat dissipation hole 110 is formed on the substrate 10. When the substrate 10 is attached to the first heat-conducting element 410, the third heat dissipation hole 110 is directly opposite to the first heat dissipation hole 411. When the substrate 10 is attached to the second heat-conducting element 420, the third heat dissipation hole 110 is directly opposite to the second heat dissipation hole 421. Specifically, in specific implementations, the heat dissipation holes can adopt a circular hole, an elongated hole, or a mesh-like hole structure. Different shapes can be flexibly selected according to heat dissipation requirements. The above structures are well known to those skilled in the art, so they will not be described in detail in this embodiment.

[0042] The first heat dissipation hole 411 and the second heat dissipation hole 421 are evenly distributed along the vertical direction of the heat-conducting component to enhance the stability of airflow. The third heat dissipation hole 110 on the substrate 10 is designed according to the layout of the chip 20 to ensure that it can be aligned with the heat dissipation hole of the heat-conducting component on either side, thereby ensuring that the heat dissipation channel can be formed under different mating conditions. Through the above structural design, the heat of the chip 20 during operation can be quickly conducted to the heat dissipation hole through the substrate 10 and then efficiently carried away by gas convection, thereby avoiding the performance degradation or shortened life of the chip 20 due to local overheating, and further improving the overall reliability of the semiconductor chip 20 package.

[0043] Furthermore, the adjustment component 30 also includes a first limiting box 350 and a second limiting box 360. The first limiting box 350 is disposed outside the first expansion body 310, and the second limiting box 360 is disposed outside the second expansion body 320. The end faces of the first limiting box 350 and the second limiting box 360 are open and close to each other. In this embodiment, the first limiting box 350 is disposed outside the first expansion body 310, and the second limiting box 360 is disposed outside the second expansion body 320. Both are enclosed structures, and their end face openings are close to each other, so that the expansion body has a specific expansion direction during the expansion process. The setting of the limiting box constrains the expansion range of the expansion body, avoids it from generating ineffective deformation, and ensures that its expansion effect can be transferred to the base to a large extent. On the other hand, as a component that directly contacts the base, the limiting box increases the contact area between the expansion body and the base, so that the expansion body can absorb heat from the base more efficiently, thereby accelerating the speed of heat conduction and diffusion and improving the overall heat dissipation performance. The limiting box can be made of metal, such as aluminum or copper, or it can be made of high thermal conductivity composite material.

[0044] Furthermore, viewed vertically, the extension direction of the first guide groove 333 forms an angle of 30-60 degrees with the first direction, and the extension direction of the second guide groove 343 is parallel to the extension direction of the first guide groove 333. Specifically, the extension direction of the guide groove forms a certain angle with the first direction to match the serrated sidewall of the substrate 10, forming a guiding constraint during the sliding process of the substrate 10, reducing deviations caused by thermal expansion and contraction, so that the substrate 10 can maintain a synchronous and uniform movement state under the alternating action of the expansion bodies on both sides, avoiding tilting, jamming, etc., thereby improving the stability and repeatability of the sliding path, and improving the smoothness and stability of the substrate 10's movement process.

[0045] A packaging method for the above-mentioned semiconductor chip package includes the following steps: Step S1: Place the chip 20 on the substrate 10; Step S2: Place the substrate 10 between the first heat-conducting component 410 and the second heat-conducting component 420, and install the adjustment components 30 on both sides of the substrate 10. Step S3: Adjusting component 30 adjusts the distance between substrate 10 and first heat-conducting component 410 and second heat-conducting component 420, so that the first heat-conducting component 410 and second heat-conducting component 420 alternately dissipate heat from substrate 10.

[0046] In summary, the semiconductor chip package provided in this embodiment enables dynamic switching of heat dissipation paths, improves the overall heat dissipation capacity of the package, and enhances the performance and reliability of the chip.

[0047] The above-described embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A semiconductor chip package, characterized in that, The device includes a substrate, a chip, an adjustment component, and a heat-conducting component. The chip is disposed on the substrate, the adjustment component is disposed on both sides of the substrate, and the heat-conducting component includes a first heat-conducting element and a second heat-conducting element, which are used to dissipate heat from the substrate. The substrate is disposed between the first heat-conducting element and the second heat-conducting element, and the adjustment component is used to adjust the distance between the substrate and the first heat-conducting element and the second heat-conducting element, so that the first heat-conducting element and the second heat-conducting element alternately dissipate heat from the substrate.

2. A semiconductor chip package according to claim 1, characterized in that, The vertical wall surface of the substrate along the first direction is configured as a sawtooth shape. The shape of the vertical wall surface of the first heat-conducting element near the substrate matches the shape of the vertical wall surface of the substrate along the first direction. The shape of the vertical wall surface of the second heat-conducting element near the substrate matches the shape of the vertical wall surface of the substrate along the first direction.

3. A semiconductor chip package according to claim 1, characterized in that, The adjustment assembly includes a first expansion body, a second expansion body, a first connector, and a second connector. The first expansion body and the second expansion body are respectively disposed on both sides of the substrate along a first direction and abut against the side wall of the substrate. The first connector is used to connect the substrate and the first expansion body, and the second connector is used to connect the substrate and the second expansion body.

4. A semiconductor chip package according to claim 3, characterized in that, The first connector includes a first contact plate and a first heat transfer plate. The first contact plate is disposed on the first expansion body and has a first guide groove. The first heat transfer plate is disposed on the substrate and the end of the first heat transfer plate away from the substrate is slidably installed in the first guide groove. The second connector includes a second contact plate and a second heat transfer plate. The second contact plate is disposed on the second expansion body and has a second guide groove. The second heat transfer plate is disposed on the substrate and has one end of the second heat transfer plate slidably mounted in the second guide groove away from the substrate.

5. A semiconductor chip package according to claim 4, characterized in that, The first guide groove has a first sliding groove on both sides along the extension direction, and the first heat transfer plate has a first limiting plate on both sides, which is slidably installed in the first sliding groove; the second guide groove has a second sliding groove on both sides along the extension direction, and the second heat transfer plate has a second limiting plate on both sides, which is slidably installed in the second sliding groove.

6. A semiconductor chip package according to claim 5, characterized in that, A first slide rail is recessed along the extension direction on the vertical sidewall of the first slide groove, and a first rolling element is rotatably installed in the first slide rail. The first rolling element abuts against the vertical sidewall of the first limiting plate. A second slide rail is recessed along the extension direction on the vertical sidewall of the second slide groove, and a second rolling element is rotatably installed in the second slide rail. The second rolling element abuts against the vertical sidewall of the second limiting plate.

7. A semiconductor chip package according to claim 1, characterized in that, The first heat-conducting component has a first heat dissipation hole on its vertical sidewall, the second heat-conducting component has a second heat dissipation hole on its vertical sidewall, and the substrate has a third heat dissipation hole. When the substrate is attached to the first heat-conducting component, the third heat dissipation hole is directly opposite to the first heat dissipation hole. When the substrate is attached to the second heat-conducting component, the third heat dissipation hole is directly opposite to the second heat dissipation hole.

8. A semiconductor chip package according to claim 3, characterized in that, The adjustment assembly further includes a first limiting box and a second limiting box. The first limiting box is disposed outside the first expansion body, and the second limiting box is disposed outside the second expansion body. The end faces of the first limiting box and the second limiting box that are close to each other are provided with openings.

9. A semiconductor chip package according to claim 4, characterized in that, Viewed vertically, the extension direction of the first guide groove forms an angle of 30-60 degrees with the first direction, and the extension direction of the second guide groove is parallel to the extension direction of the first guide groove.

10. A packaging method for a semiconductor chip package as described in any one of claims 1-9, characterized in that, Includes the following steps: Step S1: Place the chip on the substrate; Step S2: Place the substrate between the first heat-conducting component and the second heat-conducting component, and install adjustment components on both sides of the substrate; Step S3: Adjust the distance between the substrate and the first and second heat-conducting components, so that the first and second heat-conducting components alternately dissipate heat from the substrate.

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