Silicon carbide power module

Abstract

The application discloses a silicon carbide power module. The power module comprises a substrate, a plurality of upper bridge power chips, a plurality of lower bridge power chips, a positive electrode terminal, a negative electrode terminal and an alternating current terminal. The upper metal pattern layer of the substrate is provided with a main power area, and the main power area comprises an upper bridge area, a lower bridge area and a negative electrode area; the upper bridge area is provided with an upper bridge chip area and a positive electrode terminal area, the lower bridge area is provided with a lower bridge chip area, an alternating current terminal area and a first transmission area, and the negative electrode area is provided with a negative electrode terminal area and a second transmission area. The alternating current terminal area, the lower bridge chip area, the upper bridge chip area, the positive electrode terminal area and the negative electrode terminal area are sequentially arranged along a preset direction; the first transmission area and the second transmission area are symmetrically arranged along a direction intersecting the preset direction, so that the current flowing directions of the main power area on the two sides are opposite in the intersecting direction during work. The application can reduce the imbalance of parasitic inductance, improve the consistency of current distribution, reduce the risk of local thermal stress concentration and improve the reliability of the module.

Description

Technical Field

[0001] This application relates to the field of power semiconductor module technology, specifically to a silicon carbide power module. Background Technology

[0002] Silicon carbide (SiC) power modules are widely used in new energy vehicles, rail transportation, renewable energy power generation, and industrial frequency conversion due to their high withstand voltage, high switching frequency, low loss, and excellent high-temperature operating performance. With the continuous increase in system power density and efficiency requirements, higher demands are being placed on the electrical performance, thermal management capabilities, and long-term operational reliability of power modules.

[0003] In traditional power module layouts, DC input terminals, switching devices, and AC output terminals typically require internal conductive paths for power current transfer. Due to the often asymmetrical layout of chips, terminals, and conductive paths, uneven distribution of parasitic inductance and current distribution can occur across different power current transfer paths. This imbalance can lead to voltage overshoot, oscillations, and increased electromagnetic interference during high-frequency switching, and may also cause localized thermal stress concentration, thus affecting the overall performance, reliability, and lifespan of the power module.

[0004] Furthermore, between parallel power chips or electrodes, unequal impedances along different paths can easily lead to uneven current distribution, reducing the module's current-carrying capacity and causing localized overheating. Uneven distribution of current and heat can also accelerate material aging in some areas, reducing the overall reliability of the module. Summary of the Invention

[0005] This application provides a silicon carbide power module to solve the problem that the asymmetrical layout of power current transmission paths in traditional power module layouts easily leads to uneven distribution of parasitic inductance and unbalanced current distribution, which further affects the module's switching stability, thermal management capability, and long-term reliability.

[0006] This application provides a silicon carbide power module, including a substrate, multiple upper-bridge power chips, multiple lower-bridge power chips, a positive terminal, a negative terminal, and an AC terminal; The substrate includes an upper metal pattern layer, and the upper metal pattern layer is provided with a main power region, which includes an upper bridge region, a lower bridge region and a negative electrode region. The upper bridge region includes an upper bridge chip region symmetrically arranged with the plurality of upper bridge power chips, and a positive terminal region symmetrically arranged with the positive terminal; the lower bridge region includes a lower bridge chip region symmetrically arranged with the plurality of lower bridge power chips, an AC terminal region symmetrically arranged with the AC terminal, and a first transmission region symmetrically arranged, the first transmission region being used to transmit current from the upper bridge power chip on the corresponding side; the negative terminal region includes a negative terminal region with the negative terminal and a second transmission region symmetrically arranged, the second transmission region being used to transmit current from the lower bridge power chip on the corresponding side; In this configuration, along a preset direction of the main power region, the AC terminal area, the lower bridge chip area, the upper bridge chip area, the positive terminal area, and the negative terminal area are sequentially arranged; the first transmission area and the second transmission area are symmetrically arranged along a direction intersecting the preset direction, so that when the silicon carbide power module is working, the current transmitted through the first transmission area and the second transmission area on opposite sides of the main power region flows in opposite directions in the direction intersecting the preset direction.

[0007] The silicon carbide power module provided in this application, by setting a main power region including an upper bridge region, a lower bridge region, and a negative electrode region on the upper metal pattern layer, and symmetrically arranging the upper bridge chip region and the positive terminal sub-region in the upper bridge region, the lower bridge chip region, the AC terminal region, and the first transmission region in the lower bridge region, and the second transmission region in the negative electrode region, and simultaneously symmetrically arranging the AC terminal region, the lower bridge chip region, the upper bridge chip region, the positive terminal sub-region, and the negative terminal sub-region along a preset direction of the main power region, and symmetrically arranging the first transmission region and the second transmission region along a direction intersecting the preset direction, can ensure that when the silicon carbide power module is working, the current transmitted through the first transmission region and the second transmission region on opposite sides of the main power region flows in opposite directions in the direction intersecting the preset direction. This solves the problems of uneven parasitic inductance distribution, unbalanced current distribution, and local thermal stress concentration caused by the asymmetrical layout of power current transmission paths in traditional power module layouts. It has the technical effects of reducing and balancing the parasitic inductance of the power current transmission path, improving the consistency of current distribution, reducing the risk of local thermal stress concentration, and improving the switching stability and long-term operational reliability of the module.

[0008] These or other aspects of this application will become more apparent from the description of the following embodiments. Attached Figure Description

[0009] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0010] Figure 1 This paper shows a schematic diagram of the layout of the upper metal pattern layer of the silicon carbide power module provided in an embodiment of this application.

[0011] Figure 2 A schematic diagram of a silicon carbide power module provided in an embodiment of this application is shown.

[0012] Figure 3 A schematic diagram of the bridge area provided in an embodiment of this application is shown.

[0013] Figure 4 A schematic diagram of the underbridge region provided in an embodiment of this application is shown.

[0014] Figure 5 A schematic diagram of the negative electrode region provided in an embodiment of this application is shown.

[0015] Figure 6 A schematic diagram of the current flow direction of the silicon carbide power module provided in an embodiment of this application is shown. Detailed Implementation

[0016] To enable those skilled in the art to better understand the solutions of this application, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0017] In the embodiments of this application, it should be noted that, in this document, relational terms such as first and second are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations.

[0018] Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0019] Furthermore, in the embodiments of this application, "multiple" refers to two or more. Therefore, in the embodiments of this application, "multiple" can also be understood as "at least two". "At least one" can be understood as one or more, such as one, two, or more. For example, including at least one means including one, two, or more, and is not limited to which ones are included. For example, including at least one of A, B, and C, then it could include A, B, C, A and B, A and C, B and C, or A and B and C.

[0020] It should be noted that in the embodiments of this application, "and / or" describes the relationship between associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. In addition, the character " / ", unless otherwise specified, generally indicates that the associated objects before and after it are in an "or" relationship.

[0021] It should be noted that in the embodiments of this application, "connection" can be understood as electrical connection. The connection between two electrical components can be a direct or indirect connection between the two electrical components. For example, the connection between A and B can be a direct connection between A and B, or an indirect connection between A and B through one or more other electrical components.

[0022] This application provides a silicon carbide power module applicable to power conversion scenarios such as new energy vehicles, rail transit, renewable energy power generation, and industrial frequency conversion. The silicon carbide power module can serve as the main power switch in a power conversion device, working in conjunction with an external DC input terminal, an AC output device, and a drive control circuit. The external DC input terminal provides DC power to the silicon carbide power module, the drive control circuit provides drive signals to the silicon carbide power module, and the silicon carbide power module operates as a power switch based on the drive signals, outputting power current to the AC output device. The above application environment is only used to illustrate the usage scenarios of the silicon carbide power module provided in this application embodiment and is not intended to limit the specific application field or external system structure of the silicon carbide power module.

[0023] The silicon carbide power module provided in this application includes a substrate, multiple upper-bridge power chips, multiple lower-bridge power chips, a positive terminal, a negative terminal, and AC terminals. The substrate supports the metal pattern structure, power chips, and terminal structure within the silicon carbide power module. The multiple upper-bridge and lower-bridge power chips serve as power switching devices within the silicon carbide power module. The positive and negative terminals are used to connect to an external DC input terminal, and the AC terminals are used to connect to an AC output terminal.

[0024] The substrate includes an upper metal patterning layer, which can be a metal layer on the substrate used to form conductive patterns. The upper metal patterning layer has a main power region, which can be understood as the area in the upper metal patterning layer used to arrange power chips, power terminals, and power current transmission structures. That is to say, the main power region is not limited to a single continuous shape, but can include multiple metal pattern portions used to carry different power structures or transmit different power currents.

[0025] Figure 1 This diagram illustrates the layout of the upper metal pattern layer of a silicon carbide power module according to an embodiment of this application. Figure 2 A schematic diagram of a silicon carbide module provided in an embodiment of this application is shown, such as... Figure 1 and Figure 2 As shown, the main power region includes an upper bridge region 100, a lower bridge region 200, and a negative terminal region 300. The upper bridge region 100 is used to arrange the metal pattern structure related to the upper bridge power chip QH and the positive terminal P. The lower bridge region 200 is used to arrange the metal pattern structure related to the lower bridge power chip QL, the AC terminal AC, and the current transmission from the upper bridge power chip QH. The negative terminal region 300 is used to arrange the metal pattern structure related to the negative terminal N and the current transmission from the lower bridge power chip QL.

[0026] Specifically, Figure 3 A schematic diagram of the bridge area provided in this application embodiment is shown below. Figure 2 and 3 As shown, the bridge region 100 includes a bridge chip region 110 and a positive terminal region 120. The bridge chip region 110 is symmetrically arranged and houses multiple bridge power chips QH, while the positive terminal region 120 is symmetrically arranged and houses a positive terminal P. Here, the bridge chip region can be understood as a metal patterned area used to mount or support the bridge power chips, and the positive terminal region can be understood as a metal patterned area used to mount or connect the positive terminal. The symmetrical arrangement of the bridge chip region and the positive terminal region means that they are arranged in a left-right correspondence within the main power region, so that the bridge power chips and positive terminals located on opposite sides of the main power region have a corresponding layout relationship; this symmetrical arrangement does not require the relevant areas to be completely mirror-image in shape, size, or local wiring details.

[0027] Figure 4 A schematic diagram of the underbridge area provided in this application embodiment is shown below. Figure 2 and 4 As shown, the lower bridge region 200 includes a lower bridge chip region 210, an AC terminal region 220, and a first transmission region 230. The lower bridge chip region 210 is symmetrically arranged and has multiple lower bridge power chips QL. The AC terminal region 220 is symmetrically arranged and has AC terminals AC. The first transmission region 230 is symmetrically arranged and used to transmit current from the corresponding upper bridge power chip QH. The lower bridge chip region can be understood as a metal patterned area for mounting or supporting the lower bridge power chips, and the AC terminal region can be understood as a metal patterned area for mounting or connecting AC terminals. The first transmission region can be understood as a metal patterned area in the lower bridge region used to receive and transmit the output current of the corresponding upper bridge power chip. Here, "corresponding side" refers to the side corresponding to the relative arrangement of the upper bridge power chips on both sides of the main power region. For example, the first transmission region located on one side of the main power region is used to transmit current from the upper bridge power chip on that side, and the first transmission region located on the other side of the main power region is used to transmit current from the upper bridge power chip on that other side.

[0028] Figure 5 A schematic diagram of the negative electrode region provided in the embodiments of this application is shown below. Figure 2 and 5 As shown, the negative electrode region 300 includes a negative terminal region 310 and a second transmission region 320. The negative terminal region 310 is provided with a negative terminal N, and the second transmission region 320 is symmetrically arranged and used to transmit current from the corresponding lower-bridge power chip QL. The negative terminal region can be understood as a metal patterned area for mounting or connecting the negative terminal, and the second transmission region can be understood as a metal patterned area in the negative electrode region used to receive and transmit the output current of the corresponding lower-bridge power chip. Here, "corresponding side" also refers to the side corresponding to the layout of the lower-bridge power chip on both sides of the main power region.

[0029] Along a preset direction in the main power region, the AC terminal area 220, the lower bridge chip area 210, the upper bridge chip area 110, the positive terminal area 120, and the negative terminal area 310 are arranged sequentially. This preset direction, in conjunction with the accompanying drawings, can be understood as the arrangement direction of the terminal areas and chip areas within the main power region. It is only used to describe the relative positional relationship between the areas and is not intended to limit the spatial orientation of the silicon carbide power module during actual installation or use. In other words, in the illustrated embodiment, this preset direction can be understood as the direction from the AC terminal area to the negative terminal area in the figure; in other embodiments, as long as the AC terminal area, lower bridge chip area, upper bridge chip area, positive terminal area, and negative terminal area maintain the above-described sequential arrangement along a certain direction, it can be understood as satisfying the arrangement requirements of the preset direction in this application embodiment.

[0030] The first transmission area 230 and the second transmission area 320 are both arranged symmetrically along a direction intersecting with a preset direction. Here, "direction intersecting with a preset direction" can be understood as a direction different from the sequential arrangement of the terminal areas and chip areas mentioned above; for example, it can be a direction perpendicular or substantially perpendicular to the preset direction, but it is not required that the two be strictly perpendicular. The symmetrical arrangement of the first and second transmission areas along the direction intersecting with the preset direction means that the first and second transmission areas respectively form corresponding current transmission areas on opposite sides of the main power area, resulting in a corresponding power current transmission layout on both sides of the main power area.

[0031] Figure 6 A schematic diagram illustrating the current flow direction of a silicon carbide power module provided in an embodiment of this application is shown. Figure 6 As shown, when the silicon carbide power module is operating, the currents transmitted through the first transmission region 230 and the second transmission region 320 on opposite sides of the main power region flow in opposite directions in the direction intersecting with the preset direction. It should be noted that the aforementioned "opposite flow direction" does not require that the current directions of all local path segments in the first and second transmission regions be completely opposite, nor does it require that the current components along the preset direction be opposite; it mainly illustrates that on opposite sides of the main power region, the current transmission paths formed through the first and second transmission regions have opposite flow directions in the direction intersecting with the preset direction. This arrangement allows the current transmission paths on both sides of the main power region to form corresponding and opposite current flow directions, thereby helping to reduce parasitic inductance imbalances in the power current transmission paths, improve current distribution consistency, and reduce the risk of localized thermal stress concentration.

[0032] It is understood that in the current transmission path formed by the positive terminal, the upper bridge power chip, the lower bridge power chip, and the negative terminal, both the first and second transmission regions on opposite sides of the main power region participate in the transmission of the corresponding side current. Therefore, this operating state reflects the corresponding arrangement relationship of the first and second transmission regions and the layout characteristics of the opposite current flow direction on opposite sides of the main power region in the embodiments of this application. By making the currents on opposite sides of the current transmission path flow in opposite directions in the direction intersecting with the preset direction, the parasitic inductance effects generated by the current transmission paths on opposite sides can tend to cancel each other out or weaken, thereby helping to reduce the parasitic inductance imbalance in the power current transmission path, improve the consistency of current distribution on opposite sides, and reduce the risk of thermal stress concentration caused by local current concentration.

[0033] In another operating state, when the lower bridge power chip is off, current can be transmitted from the positive terminal to the AC terminal via the upper bridge power chip. In this state, the current primarily travels through the first transmission area corresponding to the upper bridge power chip. In yet another operating state, when the upper bridge power chip is off, current can be transmitted from the negative terminal to the AC terminal via the lower bridge power chip. In this state, the current primarily travels through the second transmission area corresponding to the lower bridge power chip. The current transmission paths in these different operating states can be formed based on the control strategy of the half-bridge structure and real-time load state switching. This is not intended to limit the silicon carbide power module to simultaneously forming all current transmission paths at any given time. Furthermore, the two current transmission paths formed via the AC terminal are mainly used to illustrate the current transmission mode of the silicon carbide power module under different conduction states, and are not the main subject of explanation regarding the opposite current flow direction between the main power region and its two sides in this embodiment.

[0034] It should be made clear that, Figure 6 The arrows shown to indicate the direction of current are only for illustrating the direction of current transmission when the silicon carbide power module is working. They are not intended to limit the current transmission path to be a straight line, nor are they intended to limit the actual flow trajectory of the current in the upper metal graphic layer to be exactly the same as the shape of the arrow. Figure 6 The arrows in the diagram are essentially used to represent the current transmission relationship from the positive terminal to the upper bridge power chip, then through the first transmission region to the lower bridge power chip, and finally through the second transmission region to the negative terminal.

[0035] Based on the above layout structure, the silicon carbide power module provided in this application embodiment, by setting an upper bridge region, a lower bridge region, and a negative electrode region in the main power region of the upper metal pattern layer, and by forming a corresponding symmetrical layout of the upper bridge chip region, the positive terminal region, the lower bridge chip region, the AC terminal region, the first transmission region, and the second transmission region, and by arranging the AC terminal region, the lower bridge chip region, the upper bridge chip region, the positive terminal region, and the negative terminal region sequentially along a preset direction, can enable multiple upper bridge power chips, multiple lower bridge power chips, positive terminals, negative terminals, and AC terminals to form an orderly power current transmission layout in the main power region. Furthermore, by symmetrically arranging the first transmission region and the second transmission region along a direction intersecting the preset direction, and by ensuring that the current transmitted through the first and second transmission regions on opposite sides of the main power region during operation flows in opposite directions along the direction intersecting the preset direction, the problem of uneven parasitic inductance distribution and unbalanced current distribution caused by unbalanced layout can be reduced, local current stress and thermal stress concentration can be reduced, thereby improving the switching stability and long-term operational reliability of the silicon carbide power module.

[0036] In some embodiments, such as Figure 1 and Figure 2As shown in the embodiment of this application, the silicon carbide power module further includes a signal connection area 400 on the upper metal pattern layer. The signal connection area 400 includes gate connection portions (G1, G2) and source connection portions (S1, S2). The gate connection portions (G1, G2) are used to connect to the gates of the upper-bridge power chip QH and / or the lower-bridge power chip QL, and the source connection portions (S1, S2) are used to connect to the sources of the upper-bridge power chip QH and / or the lower-bridge power chip QL. The gate connection portions and source connection portions can be used to implement drive signal connections for the power chips, enabling the upper-bridge power chip and / or the lower-bridge power chip to receive gate drive signals provided by an external drive control circuit and form corresponding source signal connections through the source connection portions. The signal connection area can be shared with the main power area on the upper metal pattern layer. The signal connection area is mainly used to arrange signal connection-related structures, while the main power area is mainly used to arrange power chips, power terminals, and current transmission structures, thus distinguishing the signal connection-related structures from the power current transmission-related structures on the layout.

[0037] As one implementation method, such as Figure 2 As shown, the signal connection area 400 may include multiple signal connection sub-regions spaced apart from each other, and the gate connection portions (G1, G2) and source connection portions (S1, S2) may be respectively located in the corresponding signal connection sub-regions. Figure 2 In the illustrated embodiment, the gate connection portion can correspond to the gate G1, gate G2, and other connection positions in the figure, and the source connection portion can correspond to the source S1, source S2, and other connection positions in the figure. It should be understood that the gate connection portion and the source connection portion can be at least one of metal pads, connection terminals, connection areas, or terminalized connection structures, and should not be construed as being limited to a specific structural form.

[0038] It should be made clear that, Figure 2 In the diagram, G1, G2, S1, and S2 are used only to distinguish the signal connection positions corresponding to different bridge arms. Specifically, G1 corresponds to the gate connection position of the lower bridge power chip QL, and G2 corresponds to the gate connection position of the upper bridge power chip QH; S1 corresponds to the source connection position of the lower bridge power chip QL, and S2 corresponds to the source connection position of the upper bridge power chip QH. The above markings are only used to illustrate the correspondence between the gate and source connections and the upper bridge power chip QH and lower bridge power chip QL in the illustrated embodiment, and are not intended to limit the specific number, shape, or lead-out method of the gate and source connections.

[0039] In some embodiments, such as Figures 1 to 4As shown in the embodiment of this application, in the silicon carbide power module, the upper bridge chip region 110 includes a first upper bridge chip region and a second upper bridge chip region. Multiple upper bridge power chips include a first upper bridge chip group disposed in the first upper bridge chip region and a second upper bridge chip group disposed in the second upper bridge chip region, with the first and second upper bridge chip groups arranged symmetrically. The lower bridge chip region 210 includes a first lower bridge chip region and a second lower bridge chip region. Multiple lower bridge power chips include a first lower bridge chip group disposed in the first lower bridge chip region and a second lower bridge chip group disposed in the second lower bridge chip region, with the first and second lower bridge chip groups arranged symmetrically. Through this arrangement, multiple upper bridge power chips can form a chip group layout located on opposite sides within the upper bridge region, and multiple lower bridge power chips can form a chip group layout located on opposite sides within the lower bridge region. The upper-bridge chipsets on opposite sides can be arranged corresponding to the first transmission regions on opposite sides, allowing the current of the upper-bridge power chip on the corresponding side to be transmitted through the first transmission region on the corresponding side. Similarly, the lower-bridge chipsets on opposite sides can be arranged corresponding to the second transmission regions on opposite sides, allowing the current of the lower-bridge power chip on the corresponding side to be transmitted through the second transmission region on the corresponding side. This reduces the difference in current transmission paths between the corresponding power chips and the corresponding transmission regions, which is beneficial for a balanced arrangement of current paths on opposite sides of the main power region.

[0040] It should be noted that the symmetrical arrangement of the first upper bridge chip group and the second upper bridge chip group, as well as the symmetrical arrangement of the first lower bridge chip group and the second lower bridge chip group, is mainly used to illustrate that the corresponding chip groups have a corresponding layout relationship on the opposite sides of the main power area. It does not require that each power chip in the corresponding chip group be completely mirrored in terms of geometry, size, spacing or local connection structure.

[0041] In some embodiments, such as Figure 1 and Figure 2 As shown in the embodiments of this application, in the silicon carbide power module, the first upper bridge chip group and the second upper bridge chip group each include two upper bridge power chips arranged at intervals, and the first lower bridge chip group and the second lower bridge chip group each include two lower bridge power chips arranged at intervals. The interval arrangement of the two power chips in the same chip group provides space for the installation, fixing, and electrical connection of the power chips with adjacent metal pattern structures.

[0042] It should be understood that each chipset in this application embodiment includes two power chips. This is a specific arrangement based on the illustrated embodiment, used to illustrate the specific arrangement of multiple upper-bridge power chips and multiple lower-bridge power chips in the corresponding chip area, and is not intended to limit the number of power chips in each chipset to only two. In other embodiments, the number of power chips in each chipset can be adjusted according to the available area of ​​the substrate, the size of the power chips, and the current requirements of the silicon carbide power module.

[0043] In some embodiments, such as Figure 1 and Figure 2 As shown in the embodiment of this application, the silicon carbide power module includes a gate resistor placement section in the signal connection area 400. This gate resistor placement section is located between the symmetrically arranged upper bridge chip areas 110 and between the symmetrically arranged lower bridge chip areas 210. The gate resistor placement section is used to set a gate resistor R. The gate resistor placement section is a metal pattern portion in the signal connection area used to carry or connect the gate resistor R. The gate resistor R can be used in the transmission path of the gate drive signal. By placing the gate resistor placement section between the symmetrically arranged upper bridge chip areas and between the symmetrically arranged lower bridge chip areas, the gate resistor can be arranged close to the corresponding gate connection portion and the corresponding power chip, facilitating the transmission of the gate drive signal to the gate of the corresponding power chip via the gate resistor.

[0044] It should be noted that the gate resistor placement is located between the symmetrically arranged upper bridge chip areas 110 and between the symmetrically arranged lower bridge chip areas 210. This is mainly to illustrate that the gate resistor placement has a corresponding arrangement position between the relatively arranged chip areas. It does not require that the gate resistor placement must be located at the geometric center of the two chip areas, nor does it require that its shape or size completely correspond to the chip areas on both sides.

[0045] In some embodiments, such as Figure 1 and Figure 2As shown in the embodiments of this application, the silicon carbide power module further includes drain connection portions (D1, D2). At least a portion of the drain connection portion (D1) is disposed in the main power region, and / or, at least a portion of the drain connection portion (D2) is disposed in the signal connection region. The drain connection portion is a metal pattern portion used to realize the drain-side connection or lead-out of the upper bridge power chip and / or the lower bridge power chip. Since the main power region is mainly used to arrange power chips, power terminals, and current transmission structures, and the signal connection region is mainly used to arrange signal connection related structures, the drain connection portion can be disposed in the main power region or the signal connection region according to the position of the corresponding power chip, the conductive path arrangement of the main power region, and the trace space of the signal connection region. Here, "at least a portion is disposed in the main power region, and / or, at least a portion is disposed in the signal connection region" is used to describe that the drain connection portion can be entirely disposed in the main power region, entirely disposed in the signal connection region, or partially disposed in the main power region and partially disposed in the signal connection region.

[0046] It should be made clear that, Figure 2 In this diagram, D1 and D2 are used only to distinguish the drain connection positions corresponding to different bridge arms. Specifically, D1 can correspond to the drain connection position of the lower bridge power chip QL, and D2 can correspond to the drain connection position of the upper bridge power chip QH. The above marking method is only used to illustrate the correspondence between the drain connection portion and the upper bridge power chip QH and the lower bridge power chip QL in the illustrated embodiment, and is not used to limit the specific number, shape, size, or lead-out method of the drain connection portion.

[0047] In some embodiments, such as Figure 1 and Figure 2 As shown in the embodiment of this application, the signal connection area 400 of the silicon carbide power module further includes a temperature detection unit. The temperature detection unit is equipped with at least one thermistor (NTC), which is used to detect the temperature of the silicon carbide power module. The temperature detection unit is the part of the signal connection area used to arrange the temperature detection element and its connection structure. The thermistor can detect the temperature of the silicon carbide power module based on the characteristic that its resistance value changes with temperature. Since the detection signal output by the thermistor is a temperature-related signal, placing the temperature detection unit in the signal connection area facilitates the coordinated arrangement of the thermistor and the signal lead-out structure in the signal connection area. In one embodiment, the temperature detection unit in the illustrated embodiment can be equipped with two thermistors to correspond to different temperature detection positions; in other embodiments, the number of thermistors can also be set to one or more according to the temperature detection requirements of the silicon carbide power module.

[0048] Understandable Figure 1 and Figure 2The specific shape of the temperature sensing unit can vary. The shape shown in the attached figure is only for illustrative purposes to illustrate one arrangement of the thermistors in the signal connection area and is not intended to limit the specific outline, size, or shape of the temperature sensing unit. In actual implementation, the shape of the temperature sensing unit can be adjusted according to the number of thermistors, the placement of the thermistors, the available space in the signal connection area, and the signal lead-out requirements of the thermistors, as long as it can meet the requirements for setting at least one thermistor and connecting the temperature detection signal.

[0049] In some embodiments, in the silicon carbide power module provided in this application, multiple upper-bridge power chips QH and multiple lower-bridge power chips QL are fixed to the main power region by sintering or reflow. Sintering can be understood as using sintering material to form a connection layer under heating, pressurization, or other process conditions to fix the upper-bridge power chip or lower-bridge power chip onto the corresponding metal pattern portion of the main power region; reflow can be understood as using solder to form a welding connection layer after heating and reflowing to fix the upper-bridge power chip or lower-bridge power chip onto the corresponding metal pattern portion of the main power region. Fixing the power chips by sintering or reflow can form a stable mechanical and electrical connection between the power chip and the main power region, and is beneficial for the conduction of heat to the substrate side during the operation of the power chip. The sintering method and reflow method can be selected according to the packaging requirements of the power chip, the connection material, and the process conditions.

[0050] In some embodiments, in the silicon carbide power module provided in this application, at least some electrical connections between the upper bridge power chip QH, the lower bridge power chip QL, the positive terminal P, the negative terminal N, and the AC terminal are made by wire bonding or copper busbar connection. "At least some electrical connection" means that some connection positions between the power chip and the terminal, between different power chips, or between a power chip and the corresponding metal pattern portion in the main power region can be implemented by wire bonding or copper busbar connection. It is not required that all electrical connections within the silicon carbide power module use the same connection method.

[0051] Wire bonding can be understood as electrically connecting electrodes, terminals, or metal graphic parts to be connected using metal wires. The wire diameter, quantity, and connection position can be selected according to the current carrying capacity requirements. Busbar bonding can be understood as electrically connecting power terminals, power chips, or metal graphic parts to be connected using sheet-like, strip-like, or other shaped copper conductors to meet the needs of larger current transmission. In actual implementation, wire bonding, busbar bonding, or a combination of both can be selected based on the current magnitude, layout space, and process requirements at different connection locations within the main power area.

[0052] In some embodiments, the silicon carbide power module provided in this application further includes an intermediate insulating layer and a lower metal pattern layer on the substrate, with the intermediate insulating layer disposed between the upper and lower metal pattern layers. The upper metal pattern layer can be used to form the metal pattern structures in the aforementioned main power region and signal connection region, and to carry power chips, terminals, and corresponding connection structures; the lower metal pattern layer can be disposed on the side of the intermediate insulating layer opposite to the upper metal pattern layer; the intermediate insulating layer is used to form electrical isolation between the upper and lower metal pattern layers. By disposing the intermediate insulating layer between the upper and lower metal pattern layers, the substrate can form a layered structure, satisfying the arrangement of power chips, terminals, and connection structures on the upper metal pattern layer while maintaining insulation isolation between the upper and lower metal pattern layers. As one implementation, the intermediate insulating layer can be a ceramic insulating layer to adapt to the high voltage, high temperature, and high heat dissipation requirements of the silicon carbide power module.

[0053] The above description, in conjunction with specific embodiments, provides a further detailed explanation of this application and should not be construed as limiting the specific implementation of this application to these descriptions. For those skilled in the art, various simple deductions or substitutions can be made without departing from the concept of this application, and all such modifications and substitutions should be considered within the scope of protection of this application.

Claims

1. A silicon carbide power module, characterized in that, It includes a substrate, multiple upper-bridge power chips, multiple lower-bridge power chips, a positive terminal, a negative terminal, and AC terminals; The substrate includes an upper metal pattern layer, and the upper metal pattern layer is provided with a main power region, which includes an upper bridge region, a lower bridge region and a negative electrode region. The upper bridge region includes an upper bridge chip region symmetrically arranged with the plurality of upper bridge power chips, and a positive terminal region symmetrically arranged with the positive terminal; the lower bridge region includes a lower bridge chip region symmetrically arranged with the plurality of lower bridge power chips, an AC terminal region symmetrically arranged with the AC terminal, and a first transmission region symmetrically arranged, the first transmission region being used to transmit current from the upper bridge power chip on the corresponding side; the negative terminal region includes a negative terminal region with the negative terminal and a second transmission region symmetrically arranged, the second transmission region being used to transmit current from the lower bridge power chip on the corresponding side; In this configuration, along a preset direction of the main power region, the AC terminal area, the lower bridge chip area, the upper bridge chip area, the positive terminal area, and the negative terminal area are sequentially arranged; the first transmission area and the second transmission area are symmetrically arranged along a direction intersecting the preset direction, so that when the silicon carbide power module is working, the current transmitted through the first transmission area and the second transmission area on opposite sides of the main power region flows in opposite directions in the direction intersecting the preset direction.

2. The silicon carbide power module according to claim 1, characterized in that, The upper metal pattern layer also has a signal connection area, which has a gate connection portion and a source connection portion. The gate connection portion is used to connect the gate of the upper bridge power chip and / or the lower bridge power chip, and the source connection portion is used to connect the source of the upper bridge power chip and / or the lower bridge power chip.

3. The silicon carbide power module according to claim 1, characterized in that, The upper-bridge chip region includes a first upper-bridge chip region and a second upper-bridge chip region. The plurality of upper-bridge power chips include a first upper-bridge chip group disposed in the first upper-bridge chip region and a second upper-bridge chip group disposed in the second upper-bridge chip region, wherein the first upper-bridge chip group and the second upper-bridge chip group are arranged symmetrically. The lower-bridge chip region includes a first lower-bridge chip region and a second lower-bridge chip region. The plurality of lower-bridge power chips include a first lower-bridge chip group disposed in the first lower-bridge chip region and a second lower-bridge chip group disposed in the second lower-bridge chip region, wherein the first lower-bridge chip group and the second lower-bridge chip group are arranged symmetrically.

4. The silicon carbide power module according to claim 3, characterized in that, The first upper-bridge chipset and the second upper-bridge chipset each include two upper-bridge power chips that are spaced apart, and the first lower-bridge chipset and the second lower-bridge chipset each include two lower-bridge power chips that are spaced apart.

5. The silicon carbide power module according to claim 2, characterized in that, The signal connection area also includes a gate resistor placement section, which is located between the symmetrically arranged upper bridge chip areas and between the symmetrically arranged lower bridge chip areas. The gate resistor placement section is used to set a gate resistor.

6. The silicon carbide power module according to claim 2, characterized in that, The silicon carbide power module further includes a drain connection portion, at least a portion of which is disposed in the main power region, and / or, at least a portion of which is disposed in the signal connection region.

7. The silicon carbide power module according to claim 2, characterized in that, The signal connection area also includes a temperature detection unit, which is provided with at least one thermistor for detecting the temperature of the silicon carbide power module.

8. The silicon carbide power module according to claim 1, characterized in that, The plurality of upper-bridge power chips and the plurality of lower-bridge power chips are fixed to the main power region by sintering or reflow.

9. The silicon carbide power module according to claim 1, characterized in that, At least some electrical connections between the upper bridge power chip, the lower bridge power chip, the positive terminal, the negative terminal, and the AC terminal are made by wire bonding or metal busbar connection.

10. The silicon carbide power module according to claim 1, characterized in that, The substrate further includes an intermediate insulating layer and a lower metal pattern layer, wherein the intermediate insulating layer is disposed between the upper metal pattern layer and the lower metal pattern layer.

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