Substrate processing apparatus and substrate processing method

Abstract

A substrate processing apparatus and a substrate processing method are provided. The substrate processing apparatus can include a processing section that processes a substrate; a plasma generation section that generates plasma from a process gas; and a baffle assembly that is located between the processing section and the plasma generation section, and that forms a passage through which the plasma generated in the plasma generation section flows into the processing section. The processing section includes a processing chamber that has a processing space inside; a chuck unit that supports a substrate in the processing space; and an exhaust unit that is provided to exhaust an atmosphere in the processing space through an outer peripheral area of the chuck unit. A purge gas line is formed on the baffle assembly, and the purge gas line supplies a purge gas in a manner that causes the purge gas to flow along an inner wall of the processing chamber.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus and a substrate processing method, and more specifically, to an apparatus and method for processing substrates using plasma. Background Technology

[0002] Typically, the manufacturing processes for semiconductor devices include plasma-based processes such as etching, surface treatment, ashing, and removal of native oxide films. These processes are performed by the collision or reaction of ions, electrons, and free radicals contained in the plasma with the films on the substrate.

[0003] According to one example, a plasma treatment step that utilizes plasma to react with a film on a substrate can be performed, followed by a byproduct removal step that removes reaction byproducts generated on the substrate during the plasma treatment step.

[0004] In the plasma processing step, plasma is generated in a discharge space provided outside the processing space where the substrate is located, and a baffle arranged between the processing space and the discharge space is used to supply the free radical components contained in the plasma to the processing space to process the substrate.

[0005] However, the ultraviolet light or particles generated during the generation of the plasma flow into the processing space through the holes formed in the baffle, thereby adversely affecting the substrate.

[0006] In addition, when etching the substrate using the above method, it is difficult to adjust the etch selectivity between the film layers on the substrate.

[0007] In the byproduct removal step, the substrate is heated to a high temperature to volatilize the reaction byproducts on the substrate, thereby removing them. However, a large amount of the reaction byproducts removed from the substrate adhere to the inner wall of the processing chamber, and they act as particles during subsequent substrate processing. Summary of the Invention

[0008] The technical issues to be solved

[0009] One object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can improve processing efficiency when using plasma to process substrates.

[0010] In addition, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can minimize the adverse effects of ultraviolet light and particles on the substrate when processing the substrate using plasma generated outside the processing space where the substrate is located.

[0011] In addition, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method that allows for easy adjustment of the etching selectivity when processing a substrate using plasma generated outside the processing space where the substrate is located.

[0012] In addition, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can minimize the adhesion of reaction byproducts volatilized from the substrate to the inner wall of the processing chamber when removing reaction byproducts generated on the substrate during the substrate processing step.

[0013] The problems to be solved by the present invention are not limited to those described above. Those skilled in the art to which this invention pertains can clearly understand problems not mentioned from this specification and the accompanying drawings.

[0014] Technical solution

[0015] This invention provides an apparatus for processing a substrate. The apparatus may include: a processing unit for processing a substrate; a plasma generating unit for generating plasma from process gas; and a baffle assembly located between the processing unit and the plasma generating unit, forming a channel for the plasma generated by the plasma generating unit to flow into the processing unit; the processing unit may include: a processing chamber having a processing space inside; a suction cup unit supporting the substrate within the processing space; and an exhaust unit configured to exhaust the atmosphere within the processing space through the outer peripheral region of the suction cup unit; a purification gas line may be formed on the baffle assembly, the purification gas line supplying purification gas in such a way that purification gas flows along the inner wall of the processing chamber.

[0016] According to one embodiment, the baffle assembly may include: a first baffle having a first through hole extending in the vertical direction therein; and a second baffle being arranged spaced apart from the first baffle in the vertical direction so that a buffer space is provided between the second baffle and the first baffle, and a second through hole extending in the vertical direction is formed inside the second baffle; the purified gas pipeline may be formed in the first baffle.

[0017] According to one embodiment, the first baffle can be grounded.

[0018] According to one embodiment, when viewed from above, the first through hole and the second through hole can be configured to not overlap.

[0019] According to one embodiment, the plasma generating unit may include: a discharge chamber having a plasma forming space in which plasma is formed by a first gas; an adapter connected to the discharge chamber and the processing chamber, which guides the plasma formed in the discharge chamber to the processing chamber; the baffle assembly may be fixedly coupled to the adapter, and the first baffle may be arranged separately from the inner wall of the adapter or the inner wall of the processing chamber.

[0020] According to one embodiment, the first baffle may be disposed above the second baffle, and the substrate processing apparatus may further include a gas supply unit, which may include: a first gas supply source for supplying the first gas to the plasma forming space; a second gas supply source for supplying the second gas to the buffer space without passing through the plasma forming space; and a purified gas supply source for supplying the purified gas to the purified gas supply pipeline.

[0021] According to one embodiment, a gas flow path for the second gas to flow inside and an injection hole for injecting the second gas flowing through the gas flow path into the buffer space may also be formed on the first baffle. The gas flow path may be configured to communicate with the lower region of the first baffle through the injection hole, but not with the upper region of the first baffle.

[0022] According to one embodiment, a heater may be provided on the baffle assembly described above.

[0023] According to one embodiment, the second through hole can be formed in the central region of the central region and the edge region of the second baffle, and a groove can be formed on the upper surface of the edge region of the second baffle.

[0024] According to one embodiment, a plurality of grooves may be provided at intervals along the outer periphery of the second baffle, and threaded holes may be formed between adjacent grooves in the second baffle. The baffle assembly may be fixedly connected to the plasma generating part by bolts inserted into the threaded holes.

[0025] According to one embodiment, when viewed from above, each of the aforementioned grooves can be formed in an arc shape.

[0026] According to one embodiment, a heater may be provided below the groove in the second baffle.

[0027] According to one embodiment, the substrate processing apparatus may further include: a gas supply unit; a heater disposed on the second baffle; and a controller for controlling the gas supply unit and the heater. The gas supply unit may include: a first gas supply source for supplying the first gas to the plasma forming space; a second gas supply source for supplying the second gas to the buffer space without passing through the plasma forming space; and a purified gas supply source for supplying the purified gas to the purified gas supply line. The controller may sequentially execute the following steps: a substrate processing step, supplying plasma generated by the first gas in the plasma generating chamber and the second gas supplied to the buffer space to the processing chamber, and processing the substrate disposed in the processing chamber using the plasma; and a byproduct removal step, after the substrate processing step, stopping the supply of the first gas and the second gas, and heating the substrate disposed in the processing chamber to remove the reaction byproducts generated on the substrate in the substrate processing step; during the byproduct removal step, the gas supply unit and the heater may be controlled so that the purified gas flows along the inner wall of the processing chamber.

[0028] The present invention provides a method for processing a substrate. The method may include: a substrate processing step in which plasma generated by a first gas in a plasma generation chamber is supplied to a processing chamber through a baffle assembly, and the substrate disposed in the processing chamber is processed using the plasma; and a byproduct removal step in which, after the substrate processing step, the supply of plasma to the processing chamber is stopped, and the substrate disposed in the processing chamber is heated to remove reaction byproducts generated on the substrate during the substrate processing step; during the byproduct removal step, a purifying gas may be supplied to the processing chamber in a manner in which the purifying gas flows along the inner wall of the processing chamber.

[0029] According to one embodiment, in the above-mentioned substrate processing step, the substrate may be in a state separated from the baffle assembly by a first distance, and in the above-mentioned by-product removal step, the substrate may be in a state separated from the baffle assembly by a second distance, and the substrate may be heated by a heater disposed on the baffle assembly, and the second distance may be shorter than the first distance.

[0030] According to one embodiment, the baffle assembly may further include a first baffle and a second baffle, the first baffle and the second baffle being spaced apart vertically from each other and forming a buffer space between them; in the above substrate processing step, a second gas that is supplied to the buffer space without passing through the above plasma generation chamber may be supplied to the above processing chamber together with the plasma generated by the first gas.

[0031] According to one embodiment, the first gas may include nitrogen, hydrogen, nitrogen trifluoride, ammonia, or a mixture thereof, and the second gas may include helium or argon.

[0032] According to one embodiment, in the above-described substrate processing steps, the substrate processing may be a cleaning process to clean the film on the substrate or an etching process to etch the film on the substrate.

[0033] Furthermore, the present invention provides an apparatus for processing a substrate. This substrate processing apparatus may include: a processing unit for processing a substrate; a plasma generating unit for generating plasma from a process gas; and a baffle assembly located between the processing unit and the plasma generating unit; the processing unit may include: a processing chamber having a processing space inside; a suction cup unit supporting the substrate within the processing space; and an exhaust unit configured to exhaust the atmosphere within the processing space through the outer peripheral region of the suction cup unit; the plasma generating unit may include: a discharge chamber having a plasma forming space where plasma is formed from a first gas; an adapter connected to the discharge chamber and the processing chamber, guiding the plasma formed in the discharge chamber to the processing chamber; the baffle assembly may be fixedly coupled to the adapter, and the baffle assembly may include: a first baffle having a first through hole extending vertically through its interior; and a second baffle spaced vertically from the first baffle. The arrangement is open to provide a buffer space between the second baffle and the first baffle, and a second through hole is formed inside the second baffle in the vertical direction; when viewed from above, the first through hole and the second through hole may not overlap, the first baffle may be arranged separately from the inner wall of the adapter or the inner wall of the processing chamber, and a purification gas pipeline may be formed on the first baffle and the second baffle, the purification gas pipeline may supply purification gas in a manner that allows purification gas to flow along the inner wall of the processing chamber; the substrate processing apparatus may further include: a heater disposed on the second baffle; a first gas supply source for supplying the first gas to the plasma forming space; a second gas supply source for supplying the second gas to the buffer space without passing through the plasma forming space; and a purification gas supply source for supplying the purification gas to the purification gas supply pipeline.

[0034] According to one embodiment, a groove may be formed on the upper surface of the edge region of the second baffle, and a threaded hole may be formed between adjacent grooves in the second baffle. The baffle assembly is fixedly connected to the plasma generating part by bolts inserted into the threaded holes.

[0035] Invention Effects

[0036] According to one embodiment of the present invention, the substrate processing efficiency can be improved when plasma is used to process the substrate.

[0037] Furthermore, according to one embodiment of the present invention, when the substrate is processed using plasma generated outside the processing space where the substrate is located, the adverse effects of ultraviolet light and particles on the substrate can be minimized.

[0038] Furthermore, according to one embodiment of the present invention, when processing the substrate using plasma generated outside the processing space where the substrate is located, the etching selectivity can be improved.

[0039] In addition, according to one embodiment of the present invention, when removing reaction byproducts generated on the substrate during the substrate processing step, the adhesion of reaction byproducts volatilized from the substrate to the inner wall of the processing chamber can be minimized.

[0040] The effects of the present invention are not limited to those described above. Those skilled in the art can clearly understand other effects not mentioned from this specification and the accompanying drawings. Attached Figure Description

[0041] Figure 1 A diagram is provided for illustrative purposes.

[0042] Figure 2 For brevity Figure 1 A diagram of one embodiment of the baffle assembly.

[0043] Figure 3 for Figure 2 A three-dimensional view of the first baffle.

[0044] Figure 4 for Figure 2 Top view of the first baffle.

[0045] Figure 5 for Figure 2 A three-dimensional view of the second baffle.

[0046] Figure 6 To show the use of in sequence Figure 1 A flowchart of a method for processing a substrate using a substrate processing apparatus.

[0047] Figure 7 and Figure 8 Briefly show Figure 6 A diagram showing the state of the substrate processing apparatus during the substrate processing steps and by-product removal steps.

[0048] Figures 9 to 12 They are shown respectively Figure 2 A diagram showing a modified example of the baffle assembly.

[0049] Figure 13 and Figure 14 They are shown respectively Figure 1 A modified example of the substrate processing apparatus is shown in the figure. Detailed Implementation

[0050] The embodiments of the present invention will now be described in detail with reference to the accompanying drawings, so that those skilled in the art can readily implement them. However, the present invention can be implemented in various different forms and is not limited to the embodiments shown herein. Furthermore, in describing preferred embodiments of the invention in detail, detailed descriptions are omitted where it is determined that a specific description of relevant known functions or structures might unnecessarily obscure the essence of the invention. Moreover, the same reference numerals are used throughout the drawings for parts that perform similar functions and effects.

[0051] Furthermore, when referring to a constituent element, unless specifically stated otherwise, other constituent elements are not excluded; it means that other constituent elements may also be included. Specifically, it should be understood that terms such as "comprising" or "having" are intended to specify the presence of the features, figures, steps, actions, constituent elements, components, or combinations thereof described in the specification, without pre-excluding the possibility of the presence or addition of one or more other features or figures, steps, actions, constituent elements, components, or combinations thereof.

[0052] Unless the context explicitly indicates otherwise, singular expressions include plural expressions. Furthermore, for clarity, the shapes and sizes of elements in the accompanying drawings may be exaggerated.

[0053] In this embodiment, a wafer is used as an example to illustrate the object being processed. However, the technical concept of the present invention can also be applied to apparatus used for processing other types of substrates besides wafers.

[0054] The embodiments of the present invention will now be described with reference to the accompanying drawings. Figure 1 A diagram is provided for illustrative purposes.

[0055] Reference Figure 1 The substrate processing apparatus includes a plasma generation unit 200, a processing unit 400, a baffle assembly 600, a gas supply unit 800, and a controller 10.

[0056] The plasma generation unit 200 generates plasma for substrate processing from process gases. The processing unit 400 houses and processes the substrate W. A baffle assembly 600 is arranged between the plasma generation unit 200 and the processing unit 400, primarily supplying free radicals from the plasma generated in the plasma generation unit 200 to the processing chamber 420. The gas supply unit 800 supplies various process gases for substrate processing to the plasma generation unit 200, the baffle assembly 600, or the processing unit 400. The controller 10 controls various components equipped in the substrate processing apparatus, such as the plasma generation unit 200, the processing unit 400, the gas supply unit 800, and the heater 700. Each component will be described in detail below.

[0057] The plasma generation unit 200 includes a discharge chamber 220, a plasma source 240, and an adapter 260. The discharge chamber 220 is generally cylindrical, and a plasma formation space 230 is provided inside the discharge chamber 220. A first gas, described later, flows into the plasma formation space 230, and plasma is generated from the first gas in the plasma formation space 230.

[0058] Adapter 260 provides a path for the plasma generated in discharge chamber 220 to flow into processing chamber 420.

[0059] Plasma source 240 generates an electromagnetic field in plasma formation space 230. As an example, plasma source 240 may be an inductively coupled plasma source. Plasma source 240 has an antenna 244 and a high-frequency power supply 248. Antenna 244 is located outside discharge chamber 220. Antenna 244 may be configured in a coil shape surrounding discharge chamber 220. Antenna 244 may be configured in a spiral shape surrounding discharge chamber 220 from the upper end to the lower end. High-frequency power supply 248 applies high-frequency power to antenna 244. The upper end of antenna 244 may be connected to high-frequency power supply 248, and the lower end of antenna 244 may be grounded. Although not shown in the figure, a matching device may be provided on the power line connecting high-frequency power supply 248 and antenna 244.

[0060] The adapter 260 is located between the discharge chamber 220 and the processing unit 400. The adapter 260 extends downward from the discharge chamber 220. The adapter 260 has a diffusion space 268 inside. The diffusion space 268 may be configured as a cone shape with a width that increases from top to bottom.

[0061] The processing unit 400 includes a processing chamber 420, a suction cup unit 440, and an exhaust unit 460. The processing chamber 420 is cylindrical. The processing chamber 420 has a processing space 424 inside. The outer wall of the processing chamber 420 can be grounded. The substrate is located in the processing space 424, and the substrate is subjected to predetermined processing in the processing space 424.

[0062] A suction cup unit 440 supports a substrate within the processing space 424. The suction cup unit 440 is cylindrical. It can be an electrostatic suction cup that holds the substrate using electrostatic force. A pin hole 442 extending vertically is formed within the suction cup unit 440. A lifting pin 444 is provided for substrate transfer between an external handling robot and the suction cup unit 440. The lifting pin 444 can be inserted into the pin hole 442 and moves vertically along it. When the upper end of the lifting pin 444 is above the upper end of the suction cup unit 440, the substrate is transferred to the lifting pin 444. If the upper end of the lifting pin 444 moves below the upper end of the suction cup unit 440, the substrate is placed on the suction cup unit 440. The diameter of the suction cup unit 440 is configured to be smaller than the inner diameter of the processing chamber 420. Thus, an annular gap is formed between the suction cup unit 440 and the inner wall of the processing chamber 420.

[0063] The exhaust unit 460 discharges residual gases and reaction byproducts from the processing space 424 and maintains the pressure of the processing space 424 at a set process pressure. An exhaust port 464 is formed at the lower end of the processing chamber 420. The exhaust unit 460 has an exhaust pipe 468 connected to the exhaust port 464. A vacuum pump (not shown) may be installed on the exhaust pipe 468.

[0064] The baffle assembly 600 can uniformly supply the plasma generated by the plasma generator 200 to the processing chamber 420. Furthermore, the baffle assembly 600 can be configured to primarily supply the ions, electrons, and free radicals contained in the plasma to the processing chamber 420. The baffle assembly 600 can be fixedly coupled to the plasma generator 200. For example, the baffle assembly 600 can be fixedly coupled to the adapter 260 by means of screws.

[0065] Figure 2 For brevity Figure 1 A cross-sectional view of an embodiment of the baffle assembly.

[0066] Reference Figure 2 The baffle assembly 600 includes a first baffle 640 and a second baffle 660. The first baffle 640 may be located above the second baffle 660.

[0067] Figure 3 and Figure 4 Briefly show Figure 2 A three-dimensional view and a top view of the first baffle.

[0068] Reference Figure 2 and Figure 3When viewed from above, the first baffle 640 is circular. The outer diameter of the first baffle 640 is smaller than the inner diameter of the adapter 260. Accordingly, an annular gap 658 is formed between the first baffle 640 and the adapter 260. The first baffle 640 can be grounded. According to one example, the first baffle 640 can be electrically connected to the processing chamber 420. Accordingly, ions and free radicals contained in the plasma flowing mainly toward the baffle assembly 600 can flow into the processing chamber 420.

[0069] The first baffle 640 has a central region 641 and an edge region 642. The central region 641 is generally circular. The edge region 642 is located outside the central region 641. The edge region 642 is generally annular. When viewed from above, the central region 641 may have a size similar to or larger than the substrate placed in the suction cup unit 440. The central region 641 and the edge region 642 are arranged with a height difference. The edge region 642 may be arranged higher than the central region 641. Accordingly, the first baffle 640 has a shape in which a recessed space is formed in the upper part of the central region 641.

[0070] A plurality of first through holes 644 are formed in the central region 641 of the first baffle 640. Each first through hole 644 extends from the upper end to the lower end of the first baffle 640. When viewed from above, each first through hole 644 is formed in a region that does not overlap with the gas flow path 648 described later. The length direction of each first through hole 644 may be formed in a direction perpendicular to the substrate. Plasma of the first gas generated in the plasma generation chamber can flow into the processing chamber 420 through the first through holes 644.

[0071] A gas flow path 648 is formed inside the first baffle 640. The gas flow path 648 is a channel for the flow of the second gas, described later. The gas flow path 648 may be formed in the central region 641 of the first baffle 640. According to one example, the gas flow path 648 has a central flow path 648a, a plurality of annular flow paths 648b, and a plurality of straight flow paths 648c. The central flow path 648a is formed in a circle. When viewed from above, the center of the central flow path 648a coincides with the center of the first baffle 640. Each annular flow path 648b is annular. Each annular flow path 648b is arranged to surround the central flow path 648a. The annular flow paths 648b have different radii. The center of the annular flow path 648b may coincide with the center of the central flow path 648a. The plurality of annular flow paths 648b may be arranged as concentric circles. According to one example, two annular flow paths 648b may be provided.

[0072] Each straight flow path 648c connects to a plurality of annular flow paths 648b and a central flow path 648a. The length direction of each straight flow path 648c is arranged along the radial direction of the first baffle 640. The included angle between adjacent straight flow paths 648c can be set to be the same. According to one example, one end of the straight flow path 648c is connected to the central flow path 648a, and the other end of the straight flow path 648c is located further outward than the outermost annular flow path 648b. Accordingly, compared with the case where the other end of the straight flow path 648c is connected to the annular flow path 648b, a wider area can be supplied with the second gas. One of the plurality of straight flow paths 648c has a flow inlet connected to an external second pipeline 824. According to one example, four straight flow paths 648c can be provided.

[0073] An injection hole 652 is formed on the first baffle 640. The injection hole 652 is configured to extend from the straight flow path 648c to the lower end of the first baffle 640. The injection hole 652 is formed so that its length direction is perpendicular to the substrate supported by the suction cup unit 440. The injection hole 652 is formed in the central region 641 of the first baffle 640. When viewed from above, the injection hole 652 is configured to overlap with the gas flow path 648. The gas flow path 648 communicates with the lower region of the first baffle 640 through the injection hole 652, and is configured not to communicate directly with the upper region of the first baffle 640. Accordingly, the second gas supplied to the gas flow path 648 can be supplied to the processing space 424 without passing through the plasma formation space 230.

[0074] A purified gas line 844 is formed in the baffle assembly 600. According to one example, the purified gas line 844 may be formed on the first baffle 640. The purified gas line 844 may be formed in the edge region 642 of the first baffle 640. The purified gas line 844 has an inflow path 844a, a connecting path 844b, and an outlet hole 844c. The connecting path 844b is annular. Externally supplied purified gas flows into the connecting path 844b via the inflow path 844a. The outlet hole 844c extends from the connecting path 844b to the end of the side wall of the first baffle 640. The outlet hole 844c is formed to allow the purified gas to flow downwards along the inner wall of the processing chamber 420. According to one example, it may be configured to discharge purified gas in a direction toward the inner wall of the adapter 260. The purified gas discharged toward the inner wall of the adapter 260 flows downwards along the inner wall of the processing chamber 420. For example, the discharge orifice 844c can be configured such that its length direction is along the radial direction of the first baffle 640. A plurality of discharge orifices 844c are provided along the length direction of the connecting flow path 844b. The spacing between adjacent discharge orifices 844c can be set to be the same.

[0075] Figure 5 For brevity Figure 2 A three-dimensional view of the second baffle.

[0076] Reference Figure 2 and Figure 5 The second baffle 660 has a central region 661 and an edge region 662. The central region 661 is generally circular. The edge region 662 is located outside the central region 661. The edge region 662 is generally annular. When viewed from above, the central region 661 may have a size similar to or larger than the substrate placed in the suction cup unit 440. The central region 661 and the edge region 662 are arranged with a height difference. The edge region 662 may be positioned higher than the central region 661.

[0077] The central region 661 of the second baffle 660 is separated from the central region 641 of the first baffle 640. The upper surface of the edge region 662 of the second baffle 660 is in contact with the lower surface of the edge region 642 of the first baffle 640. Accordingly, a buffer space 680 surrounded by the first baffle 640 and the second baffle 660 is formed between the central region 641 of the first baffle 640 and the central region 661 of the second baffle 660.

[0078] A plurality of second through holes 664 are formed in the central region 661 of the second baffle 660. Each second through hole 664 extends from the upper end to the lower end of the second baffle 660. The length direction of each second through hole 664 can be formed in a direction perpendicular to the substrate. The second through holes 664 can be uniformly formed throughout the entire central region 661 of the second baffle 660. When viewed from above, the second through holes 664 are positioned in a position that does not overlap with the first through holes 644. Accordingly, the influence of ultraviolet light generated when plasma is formed in the discharge chamber 220 on the processing space 424 can be reduced. In addition, the inflow of particles generated in the plasma formation space 230 into the processing space 424 through the baffle assembly 600 can be reduced.

[0079] A heater 700 is inserted inside the edge region 662 of the second baffle 660. The heater 700 may be configured as a generally circular coil shape. The heater 700 may be equipped with a material that generates heat by means of impedance. A heater power supply 702 that applies electricity is connected to the heater 700.

[0080] A groove 668 is formed on the upper surface of the edge region 662 of the second baffle 660. A plurality of grooves 668 may be arranged along the outer periphery of the edge region 662 of the second baffle 660. Each groove 668 may be arranged as an arc with a predetermined width. The grooves 668 may be configured to have the same size and shape as each other. The length of each groove 668 may be longer than the interval between adjacent grooves 668. The grooves 668 may minimize heat transfer to the first baffle 640 when the heater 700 in the second baffle 660 is heating.

[0081] As described above, the baffle assembly 600 is fixedly attached to the adapter 260 by screws. Specifically, when viewed from above, a second threaded hole 672 is formed between adjacent slots 668 in the second baffle 660. The second threaded hole 672 is formed to extend from the upper surface to the lower surface of the second baffle 660. In addition, a first threaded hole 656 is formed on the first baffle 640 at a position corresponding to the second threaded hole 672 formed on the second baffle 660, and a third threaded hole 264 is formed on the adapter 260 at a position corresponding to the first threaded hole 656 formed on the first baffle 640. Bolts are sequentially threaded into the second threaded hole 672 of the second baffle 660, the first threaded hole 656 of the first baffle 640, and the third threaded hole 264 of the adapter 260, thereby allowing the baffle assembly 600 to be fixedly attached to the adapter 260.

[0082] The gas supply unit 800 includes a first gas supply source 802, a second gas supply source 822, and a purified gas supply source 842.

[0083] A first gas supply source 802 supplies a first gas to the plasma formation space 230 of the discharge chamber 220. The first gas is a reactive gas used for plasma treatment of the film on the substrate. The first gas may include nitrogen (N2), hydrogen (H2), nitrogen trifluoride (NF3), ammonia (NH3), or a mixture thereof. According to one embodiment, the first gas may be a mixture of nitrogen (N2), hydrogen (H2), and nitrogen trifluoride (NF3). Optionally, the first gas may further include ammonia (NH3) in the aforementioned mixture. The first gas supply source 802 and the plasma formation space 230 may be connected via a first pipeline 804, on which a first valve 806 may be provided. The first valve 806 may be an on / off valve for opening and closing the flow path of the first pipeline 804. Optionally, a flow regulating valve (not shown) for regulating the flow rate of the first gas may also be provided on the first pipeline 804.

[0084] The second gas supply source 822 supplies a second gas to the gas flow path 648 of the first baffle 640. The second gas is used to adjust the selectivity during plasma treatment of the film on the substrate. According to an embodiment, the second gas may include helium (He) or argon (Ar). The type and flow rate of the second gas may be appropriately selected according to the type of film on the substrate being plasma treated or the required selectivity.

[0085] The second gas supply source 822 can supply a second gas to any one of the plurality of straight flow paths 648c. The second gas supply source 822 and the straight flow path 648c can be connected via a second pipeline 824, on which a second valve 826 can be provided. The second valve 826 can be an on / off valve for opening and closing the flow path of the second pipeline 824. Optionally, a flow regulating valve (not shown) for regulating the flow rate of the second gas can also be provided on the second pipeline 824.

[0086] Purified gas supply source 842 supplies purified gas to purified gas supply line 848. The purified gas is supplied to purified gas line 844 via purified gas supply line 848. Purified gas supply source 842 and connecting flow path 844b can be connected via purified gas supply line 848, and a third valve 846 can be installed on purified gas supply line 848. The third valve 846 can be an on / off valve that opens and closes the flow path of purified gas supply line 848. Optionally, a flow regulating valve (not shown) for regulating the flow rate of purified gas can also be installed on purified gas supply line 848. The purified gas can be an inert gas. The purified gas can be nitrogen.

[0087] Figure 6 To show the use of in sequence Figure 1 A flowchart of a method for processing a substrate using a substrate processing apparatus. Figure 7 and Figure 8 Briefly show Figure 6 A diagram showing the state of the substrate processing apparatus during the substrate processing steps and by-product removal steps.

[0088] Reference Figure 6 The substrate processing method includes a substrate processing step S100 and a byproduct removal step S200. In the substrate processing step S100, the substrate is treated with plasma. The substrate processing can be dry cleaning, dry stripping, ashing, surface modification, or etching.

[0089] Reference Figure 7In substrate processing step S100, substrate W is positioned at a first distance D1 separated from baffle assembly 600. In one example, substrate W is supported by suction cup unit 440. First valve 806 and second valve 826 are open, and third valve 846 is closed. The system is configured such that high-frequency power supply 248 is on and heater 700 is off. Accordingly, a first gas is supplied to discharge chamber 220, and a second gas is supplied to gas flow path 648 of first baffle 640. Plasma is generated from the first gas by powering antenna 244, and the plasma flows via adapter 260 in the direction toward baffle assembly 600. First baffle 640 is grounded, so free radicals in the plasma, primarily from the first gas, flow into buffer space 680 through first through-hole 644. The second gas supplied to gas flow path 648 flows into buffer space 680 through injection hole 652.

[0090] The first gas and the second gas mix in the buffer space 680, and then flow into the processing space 424 through the second through hole 664 of the second baffle 660. The substrate undergoes plasma treatment in the processing space 424. During substrate treatment, the processing space 424 is depressurized. The gas and reaction byproducts in the processing space 424 flow through the gap between the suction cup unit 440 and the inner wall of the processing chamber 420, and are then discharged to the outside of the processing space 424 through the exhaust pipe 468.

[0091] After the substrate processing step S100 is completed, the by-product removal step S200 is performed.

[0092] Reference Figure 8 In the by-product removal step S200, the substrate W is in a state separated from the baffle assembly 600 by a second distance D2. According to one example, the substrate W is held in a state where it is raised a predetermined distance from the suction cup unit 440 by the lifting pin 444. Accordingly, in the by-product removal step S200, the distance between the substrate and the baffle assembly 600, i.e., the second distance D2, is shorter than the distance between the substrate and the baffle assembly 600 in the substrate processing step S100, i.e., the first distance D1.

[0093] The first valve 806 and the second valve 826 are closed, and the third valve 846 is open. Furthermore, the high-frequency power supply 248 is switched off, and the heater 700 is switched on. Accordingly, the supply of the first gas to the discharge chamber 220 is interrupted, and the supply of the second gas to the gas flow path 648 is also interrupted. Additionally, purified gas is supplied to the purified gas line 844. The processing space 424 continues to depressurize. The purified gas is injected between the first baffle 640 and the inner wall of the adapter 260, and then flows downward along the inner wall of the processing chamber 420. Accordingly, a curtain of purified gas is formed in the region adjacent to the inner wall of the processing chamber 420. The substrate is heated by the heater 700. For example, the substrate can be heated to 100 degrees Celsius or higher. Accordingly, in the substrate processing step S100, the reaction byproducts generated on the substrate volatilize. The volatilized reaction byproducts are discharged through the outer peripheral region of the suction unit 440 to the exhaust pipe 468 outside the processing space 424.

[0094] The following describes variations not described in the above embodiments.

[0095] In the example above, it is illustrated that the purified gas pipeline 844 is formed within the first baffle 640. However, unlike this, as... Figure 9 As shown, the purified gas pipeline 1844 can also be formed in the second baffle 660.

[0096] In the above embodiment, it is described that purifying gas is sprayed between the inner walls of the first baffle 640. However, this is exemplary and not limited to spraying purifying gas in a direction perpendicular to the inner wall of the adapter 260. Figure 10 As shown, the purified gas line 2844 may not be formed in a direction perpendicular to the inner wall of the adapter 260, but rather in a direction inclined downward toward the inner wall to supply purified gas.

[0097] In the example above, the heater 700 is described as being positioned at the edge region 662 of the second baffle 660. However, it is not limited to this, as... Figure 11 As shown, the heater 700 can be installed over the entire area of ​​the second baffle 660.

[0098] In the example above, it is illustrated that the second gas is supplied to the buffer space 680 between the first baffle 640 and the second baffle 660 through a gas flow path 648 formed on the first baffle 640. However, unlike this, as... Figure 12 As shown, a gas flow path 648 may not be formed on the first baffle 640, and the second gas can be directly supplied to the buffer space 680.

[0099] In the above example, a structure is described in which the substrate processing apparatus forms a plasma formation space 230 within a discharge chamber 220 located at a position higher than the baffle assembly 600. However, unlike this, as... Figure 13As shown, the substrate processing apparatus 2 may have a structure that forms plasma within the processing chamber 420, and may also be equipped with a purification gas pipeline 3844 for supplying purification gas into the processing chamber 420. In this case, when the substrate processing step S100 and the by-product removal step S200 are executed sequentially, the purification gas may be supplied in the by-product removal step S200.

[0100] In the example above, it is illustrated that the baffle assembly 600 includes a first baffle 640 and a second baffle 660. However, it is not limited to this, such as... Figure 14 As shown, the baffle assembly may have only one baffle 1600, and the baffle 1600 may be equipped with both a purified gas supply line 4844 and a heater 700.

[0101] In the example above, the baffle assembly 600 is shown to supply purified gas directly toward the inner wall of the adapter 260. However, unlike this, the baffle assembly 600 may be configured to supply purified gas directly toward the inner wall of the processing chamber 420.

[0102] In the above embodiments, it was shown that an inert gas can be used as the purifying gas, which may include nitrogen (N2). However, this is only exemplary, and gases such as helium (He) or argon (Ar) can also be used as purifying gases.

[0103] In the example above, it is illustrated that the first baffle 640 is grounded and performs the function of an ion blocker. However, unlike this, the second baffle 660 of the first baffle 640 and the second baffle 660 can be grounded to perform the function of an ion blocker, or both the first baffle 640 and the second baffle 660 can be grounded.

[0104] In the example above, it is shown that the groove 668 is formed at the upper end of the edge region 662 of the second baffle 660. However, unlike this, the groove 668 can also be formed at the lower end of the edge region 642 of the first baffle 640. Alternatively, the groove 668 can also be formed at both the upper end of the edge region 662 of the second baffle 660 and the lower end of the edge region 642 of the first baffle 640.

[0105] In the above-described substrate processing method, it is explained that the purifying gas is supplied only in the by-product removal step S200 of the substrate processing step S100 and the by-product removal step S200. However, unlike this, the purifying gas can be supplied from before the by-product removal step S200 is performed.

[0106] This document discloses exemplary embodiments, but it should be understood that other modifications are possible. The various elements or features of a particular embodiment are generally not limited to that particular embodiment, but are interchangeable and used in selected embodiments where applicable, even if not specifically shown or described. Such modifications should not be considered as departing from the spirit and scope of this disclosure, and all such modifications that will be apparent to those skilled in the art are intended to fall within the scope of the appended claims.

Claims

1. A substrate processing apparatus for processing a substrate, the substrate processing apparatus comprising: Processing unit, processes substrates; The plasma generation unit generates plasma from process gases; and A baffle assembly is located between the processing unit and the plasma generating unit, and forms a channel for the plasma generated in the plasma generating unit to flow into the processing unit; The processing unit includes: A processing room, which has processing space inside; The suction cup unit supports the substrate within the processing space; and The exhaust unit is configured to exhaust the atmosphere within the processing space through the outer peripheral region of the suction cup unit; A purification gas line is formed on the baffle assembly, which supplies purification gas in such a way that the purification gas flows along the inner wall of the processing chamber.

2. The substrate processing apparatus according to claim 1, wherein, The baffle assembly includes: The first baffle has a first through hole extending vertically inside; and The second baffle is arranged vertically spaced from the first baffle so that a buffer space is provided between the second baffle and the first baffle, and a second through hole is formed inside the second baffle in the vertical direction. The purified gas pipeline is formed on the first baffle.

3. The substrate processing apparatus according to claim 2, wherein, The first baffle is grounded.

4. The substrate processing apparatus according to claim 2, wherein, When viewed from above, the first through hole and the second through hole are configured not to overlap.

5. The substrate processing apparatus according to claim 2, wherein, The plasma generating unit includes: The discharge chamber has a plasma formation space where plasma is formed from a first gas; An adapter, connected to the discharge chamber and the processing chamber, guides the plasma formed in the discharge chamber to the processing chamber; The baffle assembly is fixedly attached to the adapter; The first baffle is arranged separately from the inner wall of the adapter or the inner wall of the processing chamber.

6. The substrate processing apparatus according to claim 5, wherein, The first baffle is disposed above the second baffle; The substrate processing apparatus further includes a gas supply unit; The gas supply unit includes: A first gas supply source supplies the first gas to the plasma formation space; A second gas supply source supplies a second gas to the buffer space without passing through the plasma formation space; and A purified gas supply source supplies the purified gas to the purified gas supply pipeline.

7. The substrate processing apparatus according to claim 6, wherein, The first baffle also has a gas flow path for the second gas to flow inside, and an injection hole for injecting the second gas flowing through the gas flow path into the buffer space; The gas flow path is configured to communicate with the lower region of the first baffle through the injection hole, but not with the upper region of the first baffle.

8. The substrate processing apparatus according to claim 2, wherein, A heater is provided on the baffle assembly.

9. The substrate processing apparatus according to claim 2, wherein, The second through hole is formed in the central region of the second baffle, which is located between the central region and the edge region. A groove is formed on the upper surface of the edge region of the second baffle.

10. The substrate processing apparatus according to claim 9, wherein, The grooves are arranged in a plurality of spaced-apart from each other along the outer periphery of the second baffle; A threaded hole is formed between adjacent slots in the second baffle; The baffle assembly is fixedly attached to the plasma generating unit by bolts inserted into the threaded holes.

11. The substrate processing apparatus according to claim 10, wherein, When viewed from above, each of the grooves is formed in an arc shape.

12. The substrate processing apparatus according to claim 9, wherein, A heater is provided below the groove within the second baffle.

13. The substrate processing apparatus according to claim 2, further comprising: Gas supply unit; A heater is disposed on the second baffle; as well as The controller controls the gas supply unit and the heater; The gas supply unit includes: The first gas supply source supplies the first gas to the plasma formation space; A second gas supply source supplies a second gas to the buffer space without passing through the plasma formation space; and A purified gas supply source supplies the purified gas to the purified gas supply pipeline. The controller executes the following steps in sequence: The substrate processing step involves supplying plasma generated by the first gas in the plasma generation chamber and the second gas supplied to the buffer space into the processing chamber, and using the plasma to process the substrate disposed in the processing chamber; and In the byproduct removal step, after the substrate processing step, the supply of the first gas and the second gas is stopped, and the substrate placed in the processing chamber is heated to remove the reaction byproducts generated on the substrate during the substrate processing step. During the byproduct removal step, the gas supply unit and the heater are controlled so that the purified gas flows along the inner wall of the processing chamber.

14. A substrate processing method for processing a substrate, the substrate processing method comprising: The substrate processing step involves supplying plasma generated by a first gas in a plasma generation chamber through a baffle assembly to a processing chamber, and using the plasma to process the substrate disposed in the processing chamber. as well as In the byproduct removal step, after the substrate processing step, the supply of plasma to the processing chamber is stopped, and the substrate disposed in the processing chamber is heated to remove the reaction byproducts generated on the substrate during the substrate processing step. During the byproduct removal step, the purified gas is supplied to the processing chamber in such a manner that it flows along the inner wall of the processing chamber.

15. The substrate processing method according to claim 14, wherein, During the substrate processing step, the substrate is in a state that is separated from the baffle assembly by a first distance; In the byproduct removal step, the substrate is in a state of being separated from the baffle assembly by a second distance, and the substrate is heated by a heater disposed on the baffle assembly; The second distance is shorter than the first distance.

16. The substrate processing method according to claim 14, wherein, The baffle assembly further includes a first baffle and a second baffle; The first baffle and the second baffle are separated from each other vertically, and a buffer space is formed between them; In the substrate processing step, a second gas, which is supplied to the buffer space without passing through the plasma generation chamber, is supplied to the processing chamber together with the plasma generated by the first gas.

17. The substrate processing method according to claim 16, wherein, The first gas includes nitrogen, hydrogen, nitrogen trifluoride, ammonia, or a mixture thereof; The second gas includes helium or argon.

18. The substrate processing method according to claim 16, wherein, In the substrate processing step, the substrate processing is either a cleaning process to clean the film on the substrate or an etching process to etch the film on the substrate.

19. A substrate processing apparatus for processing a substrate, the substrate processing apparatus comprising: Processing unit, processes substrates; The plasma generation unit generates plasma from process gases. as well as A baffle assembly is located between the processing unit and the plasma generating unit; The processing unit includes: A processing room, which has processing space inside; A suction cup unit supports the substrate within the processing space; The exhaust unit is configured to exhaust the atmosphere within the processing space through the outer peripheral region of the suction cup unit; The plasma generating unit includes: The discharge chamber has a plasma formation space where plasma is formed from a first gas; An adapter, connected to the discharge chamber and the processing chamber, guides the plasma formed in the discharge chamber to the processing chamber; The baffle assembly is fixedly attached to the adapter; The baffle assembly includes: The first baffle has a first through hole extending vertically inside; and The second baffle is arranged vertically spaced from the first baffle so that a buffer space is provided between the second baffle and the first baffle, and a second through hole is formed inside the second baffle in the vertical direction. When viewed from above, the first through hole and the second through hole do not overlap. The first baffle is arranged spaced apart from the inner wall of the adapter or the inner wall of the processing chamber; Purified gas pipelines are formed on the first baffle and the second baffle, and the purified gas pipelines supply purified gas in such a way that the purified gas flows along the inner wall of the processing chamber. The substrate processing apparatus further includes: A heater is disposed on the second baffle; A first gas supply source supplies the first gas to the plasma formation space; A second gas supply source supplies a second gas to the buffer space without passing through the plasma formation space; and A purified gas supply source supplies the purified gas to the purified gas supply pipeline.

20. The substrate processing apparatus according to claim 19, wherein, A groove is formed on the upper surface of the edge region of the second baffle; A threaded hole is formed between adjacent slots in the second baffle; The baffle assembly is fixedly attached to the plasma generating unit by bolts inserted into the threaded holes.

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